Optoelectronic semiconductor component and method for producing at least one optoelectronic semiconductor component

Abstract

The invention relates to an optoelectronic semiconductor component (100) comprising: an optoelectronic semiconductor chip (10) comprising a semiconductor body (1) and an electrical joining region (5) with a first polarity which is arranged on the semiconductor body (1), an electrical connection region (11) with a first polarity which is arranged to the side of the optoelectronic semiconductor chip (10), at least one connection element (12) which electrically conductively connects the electrical joining region (5) with the first polarity to the electrical connection region (11) with the first polarity and which has a casing (14) formed from an insulation material, wherein the insulation material (15) is an at least partially electrophoretically deposited material, and an encasement (15) in which the optoelectronic semiconductor chip (10) and the at least one connection element (12) are embedded, wherein the encasement (15) is formed of an encasement material that differs from the insulation material. The invention also relates to a method for producing at least one optoelectronic semiconductor component (100).

Description

[0001] 2023PF01682 2. April 2025P2023,1581 WO N - 1 -Description OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT An optoelectronic semiconductor component is specified, which may be a radiation-emitting semiconductor component. However, it is also possible for the optoelectronic semiconductor component to be a radiation-detecting semiconductor component. The optoelectronic semiconductor component may have an optoelectronic semiconductor chip that is suitable, for example, for emitting mixed-color radiation with different spectral components, for example, from the visible to infrared spectral range. Furthermore, a method for producing such an optoelectronic semiconductor component is specified.In semiconductor components whose semiconductor chips are electrically connected by means of wire contacts, the problem can arise that the wire contacts, especially if they are comparatively thin, touch chip edges of the semiconductor chips due to deformation caused by thermo-mechanical stress, which can lead to short circuits and failures of the semiconductor components. One problem to be solved here is to provide an optoelectronic semiconductor component with improved reliability. Another problem to be solved here is, among other things, to provide a method for producing at least one optoelectronic 2023PF01682 April 2, 2025P2023,1581 WO N -. 2 -The objective is to provide a semiconductor component with improved reliability. These objects are achieved, inter alia, by an optoelectronic semiconductor component and a method for producing at least one optoelectronic semiconductor component having the features of the independent claims. Further advantages and embodiments of an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are the subject of the dependent claims. According to at least one embodiment of an optoelectronic semiconductor component, the component comprises an optoelectronic semiconductor chip. For example, the optoelectronic semiconductor chip comprises a semiconductor body and an electrical connection region of the first polarity arranged on the semiconductor body.For example, the electrical connection region of first polarity is a metallization applied to the semiconductor body or a metallized region. The electrical connection region of first polarity can form a first electrode, such as a p- or n-electrode, of the optoelectronic semiconductor chip. Furthermore, the semiconductor body can have an active zone provided for generating electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range, for example, for generating blue light. Alternatively, the active zone can be provided for detecting electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range. 2023PF01682 April 2, 2025P2023,1581 WO N -. 3 -Furthermore, the optoelectronic semiconductor component can comprise an electrical connection region of the first polarity arranged laterally of the optoelectronic semiconductor chip. The electrical connection region of the first polarity can be laterally offset from the electrical connection region of the first polarity. The electrical connection region of the first polarity can have a connection surface that is lower than a connection surface of the electrical connection region of the first polarity. "Laterally" in the context of the application can refer to lateral directions that run parallel to a main extension plane of the optoelectronic semiconductor component. "Lower" in the context of the application can mean "vertically recessed," where "vertically" can refer to a direction that runs transversely, for example, perpendicularly, to a main extension plane of the optoelectronic semiconductor component.The electrical connection region of the first polarity can form a first electrode, for example a p- or n-electrode, of the optoelectronic semiconductor component. For example, the electrical connection region of the first polarity can be electrically contacted from the outside on a rear side of the optoelectronic semiconductor component. The electrical connection region of the first polarity can be freely accessible from the outside. The rear side can be a mounting side of the semiconductor component, which serves to fasten the semiconductor component, for example, to a connection carrier. Furthermore, it is possible for the optoelectronic semiconductor component to have at least one connecting element that connects the electrical connection region of the first polarity to the electrical connection region of the first polarity. 4 -Polarity electrically conductively connected. For example, the connecting element has a curved, in particular a slightly curved shape. The at least one connecting element can have a sheath formed from an insulating material. The sheath can cover the bare connecting element at least partially, for example completely, on the circumference. The at least one connecting element can be stabilized by the sheath. For example, the insulating material is an at least partially electrophoretically deposited material. An electrophoretically deposited material is characterized, for example, by a particularly high density of particles contained in the material. For example, the sheath can have a thickness of at most 50 µm, for example between 5 µm and 40 µm.Due to its structural properties, such as its particularly high density, the electrophoretically deposited material can be clearly distinguished from materials deposited by other manufacturing methods, so that the feature "electrophoretically deposited" represents not only a process feature but also an object feature. Furthermore, the optoelectronic semiconductor component can have an encapsulation in which the optoelectronic semiconductor chip and the at least one connecting element are embedded. The encapsulation can laterally surround the optoelectronic semiconductor chip. The encapsulation is formed, for example, from an encapsulation material that differs from the insulating material. 2023PF01682 April 2, 2025P2023,1581 WO N -. 5 -According to at least one embodiment of an optoelectronic semiconductor component, this comprises:^ an optoelectronic semiconductor chip comprising^ a semiconductor body and^ an electrical connection region of the first polarity arranged on the semiconductor body,^ an electrical connection region of the first polarity arranged laterally of the optoelectronic semiconductor chip,^ at least one connecting element that electrically conductively connects the electrical connection region of the first polarity to the electrical connection region of the first polarity and has a casing formed from an insulating material, wherein the insulating material is an at least partially electrophoretically deposited material, and^ an encapsulation in which the optoelectronic semiconductor chip and the at least one connecting element are embedded, wherein the encapsulation is formed from a encapsulation material that differs from the insulating material.According to at least one embodiment or configuration, the insulating material is a material different from a converter material. According to at least one embodiment or configuration, the at least one connecting element does not protrude beyond the encapsulation on a front side of the optoelectronic semiconductor component, which is arranged approximately opposite the rear side. Furthermore, the at least one connecting element can be completely embedded in the encapsulation, so that it does not protrude from the encapsulation at any point. 6 -protrudes. Advantageously, the various components of the semiconductor component can be protected from damage by the encapsulation. However, it is also possible for the at least one connecting element to partially protrude from the encapsulation or not be fully embedded in the encapsulation. Due to its encapsulation, it is nevertheless sufficiently protected. According to at least one embodiment or configuration, the insulating material has greater rigidity than the encapsulation material. This makes it possible for the at least one connecting element to be less deformed when embedded in the encapsulation and to have a longer service life. According to at least one embodiment or configuration, the insulating material is electrically insulating. Advantageously, this can prevent a short circuit in the event of contact between the connecting element and the optoelectronic semiconductor chip.As a result, the semiconductor component has improved reliability. According to at least one embodiment or configuration, the insulating material contains a reflective material. This allows unwanted absorption by the connecting element to be reduced and thus the brightness of the optoelectronic semiconductor component to be increased. For example, TiO2 is suitable for the insulating material. According to at least one embodiment or configuration, the optoelectronic semiconductor component has at least one electrically conductive surface region covered by a layer of the insulating material. 2023PF01682 April 2, 2025P2023,1581 WO N -. 7 -It is a surface area different from the at least one connecting element. Covering electrically conductive surface areas with the insulating material increases, for example, the thermomechanical stability of the covered areas or the associated components in the enclosure. Furthermore, if the insulating material is electrically insulating, this can reduce the risk of short circuits and improve reliability. Furthermore, if the insulating material is reflective, the brightness of the optoelectronic semiconductor component can also be improved. For example, a chip edge of the optoelectronic semiconductor chip, which is arranged on a side of the optoelectronic semiconductor chip facing the connecting element, can be covered by a layer of the insulating material.According to at least one embodiment or configuration, the insulating material is arranged only on electrically conductive regions of the optoelectronic semiconductor component, wherein the electrically conductive regions comprise the at least one connecting element and the at least one electrically conductive surface region. During electrophoretic deposition, the electrically conductive regions act as electrodes on which the insulating material is deposited. According to at least one embodiment or configuration, the optoelectronic semiconductor component has at least one electrically conductive surface region covered by a dielectric material, wherein the dielectric material is separated from the insulating material. 8 -For example, a passivation layer and / or a lens containing the dielectric material can be arranged on the electrically conductive surface region. Although the dielectric material and the insulating material can have identical material components, they differ, for example, in at least one material component. For example, SiO2 or silicone are suitable for the dielectric material. The at least one electrically conductive surface region covered by the dielectric material can be provided for the passage of radiation. By means of the dielectric material, the at least one electrically conductive surface region can be protected from an electrophoretic coating, which is, for example, reflective. The dielectric material is, in particular, permeable to the radiation transmitted through the at least one electrically conductive surface region.According to at least one embodiment or configuration, the at least one connecting element comprises a bonding wire. For example, the bare connecting element without a sheath is a bonding wire. According to at least one embodiment or configuration, the optoelectronic semiconductor component comprises at least two connecting elements, each of which electrically conductively connects the electrical connection region of the first polarity to the electrical connection region of the first polarity and has a sheath formed from the insulating material. 2023PF01682 April 2, 2025P2023,1581 WO N -. 9 -The at least two connecting elements can have a smaller thickness than a single connecting element, whose current-carrying capacity corresponds, for example, to a total current-carrying capacity of the at least two connecting elements. The smaller thickness can be associated with a smaller maximum height or vertical extension of the connecting elements, so that the optoelectronic semiconductor component can be designed relatively flat. For example, the maximum height of a bare connecting element can be two to three times greater than its thickness. In the context of the present application, "thickness" is understood to mean, for example, a maximum dimension of a cross-sectional shape of an element. Furthermore, the height or vertical extension can refer to a dimension along the vertical direction.According to at least one embodiment or configuration, first ends of the at least two connecting elements can be arranged next to one another, for example in a row, on the electrical connection region of first polarity. However, it is also possible for the first ends of the connecting elements to be arranged one on top of the other on the electrical connection region of first polarity. Furthermore, it is possible for the first ends of the connecting elements to be arranged partially on top of one another and partially next to one another on the electrical connection region of first polarity. The stacked first ends can, for example, be welded to one another. However, it is also possible for the stacked first ends to be each connected to one another by an electrically conductive connecting means, such as a solder material.2023PF01682 April 2, 2025P2023,1581 WO N -. 10 -For example, the electrical connection region of the first polarity can have a rectangular shape. Typically, the size of the electrical connection region depends on the thickness of the connecting element. Advantageously, by reducing the thickness of the connecting elements, the size of the electrical connection region and thus the component size can be reduced. According to at least one embodiment or configuration, second ends of the connecting elements are arranged next to one another on the electrical connection region of the first polarity. However, it is also possible for at least some of the second ends of the connecting elements to be arranged one above the other on the electrical connection region of the first polarity. This can be the case, for example, if a stacked arrangement does not increase the component height or if there is only space for one connecting element on the semiconductor chip, but several connections are needed from there.For example, the electrical connection region can have a rectangular shape, such as a strip shape. The electrical connection region of the first polarity can extend along a side edge of the semiconductor body, wherein the side edge is located on a side of the optoelectronic semiconductor chip facing the electrical connection region of the first polarity. The second ends of the connecting elements can be arranged in a row on the electrical connection region of the first polarity. According to at least one embodiment or configuration, the optoelectronic semiconductor chip has a conversion element arranged on a front side of the semiconductor body. The front side of the 2023PF01682 April 2, 2025P2023,1581 WO N -. 11 -The semiconductor body faces in particular toward the front side of the optoelectronic semiconductor component. The conversion element is provided for wavelength conversion of the radiation emitted by the semiconductor body or the active zone of the semiconductor body. At least a portion of the radiation can be converted into radiation of a longer wavelength, for example, yellow light. Thus, the optoelectronic semiconductor chip can emit mixed-color radiation, for example, white light. The conversion element can be, for example, a ceramic plate made of converter material or a plastic layer with embedded converter particles. According to at least one embodiment or configuration, the encapsulation material contains silicone.For example, the encapsulation material can be molded onto the further components comprising the semiconductor chip and the connecting elements, so that the encapsulation adheres to the other components without additional connecting means. Furthermore, the encapsulation material can comprise reflective particles. Suitable materials for the reflective particles are, for example, TiO2 and ZrO2. The encapsulation has reflective properties and can, for example, ensure radiation emission directed toward the front side. According to at least one embodiment or configuration, the at least one connecting element on the front side of the optoelectronic semiconductor component does not protrude beyond the conversion element. This has advantages during production of the 2023PF01682 April 2, 2025P2023,1581 WO N -. 12 -Encapsulation, for example, by means of encapsulation (so-called casting process) or by means of a casting process such as injection molding (so-called molding process), offers advantages. For example, the molding process does not require a structured mold to avoid damaging any protruding connecting elements. Instead, a flat mold and thus a simple component concept can be realized. However, it is also possible for the at least one connecting element on the front side of the optoelectronic semiconductor component to protrude beyond the conversion element. This can occur, for example, if the connecting element is of comparatively great thickness or loop height. According to at least one embodiment or configuration, the encapsulation on the front side of the optoelectronic semiconductor component is formed step-free, for example, essentially planar. This can be realized through the above-mentioned use of the flat mold.For example, the encapsulation can be flush with the conversion element on the front side. The conversion element can be uncovered by the encapsulation on the front side. However, it is also possible for the conversion element to be covered by the encapsulation on the front side. By reducing the maximum height or loop height of the connecting elements, the thickness or vertical extension of the conversion element can be reduced without the connecting elements on the front side of the optoelectronic semiconductor component protruding beyond the conversion element. Advantageously, a thinner conversion element can achieve a higher 2023PF01682 April 2, 2025P2023,1581 WO N -. 13 -Conversion efficiency and optical performance, and a higher contrast of the semiconductor component can be achieved. Overall, the described measures, such as reducing the maximum height and using a thinner conversion element, can lead to an improvement in the optical properties of the optoelectronic semiconductor component. According to at least one embodiment or configuration, the optoelectronic semiconductor component comprises an electrical connection region of second polarity. The electrical connection region of second polarity can be electrically contactable from the outside on the rear side of the optoelectronic semiconductor component and can thereby be freely accessible from the outside. In particular, the electrical connection region of second polarity is provided for further electrical contacting of the optoelectronic semiconductor chip and forms a second electrode of the optoelectronic semiconductor component.In the context of the present application, the second polarity is different from the first polarity. The optoelectronic semiconductor chip can be arranged on the electrical connection region of the second polarity or on another mounting region. An electrical connection region of the second polarity can be arranged on the semiconductor body, which is electrically connected to the electrical connection region of the second polarity by means of at least one connecting element, wherein the at least one connecting element can have a sheath formed from the insulating material. The above statements regarding the at least one connecting element that connects the electrical connection region apply in particular to the at least one connecting element. 14 -first polarity is electrically conductively connected to the electrical connection region of the first polarity, accordingly. Alternatively, the semiconductor chip can be connected to the electrical connection region of the second polarity by a wireless electrically conductive connection means. According to at least one embodiment or configuration, the semiconductor body of the optoelectronic semiconductor chip has a first and a second semiconductor region of different conductivity, wherein the active zone is arranged between the first and the second semiconductor region. The first and the second semiconductor region as well as the active zone can each be formed from one or more semiconductor layers. The semiconductor layers can be layers deposited epitaxially on a growth substrate. The growth substrate, for example a sapphire substrate, can remain in the semiconductor chip or be at least partially detached.The first semiconductor region can be arranged on a side of the semiconductor body facing the electrical connection region of second polarity. The second semiconductor region can be arranged on a side of the semiconductor body facing away from the electrical connection region of second polarity. For example, the first semiconductor region has p-conductivity, while the second semiconductor region has n-conductivity. However, it is also possible for the first semiconductor region to have n-conductivity and the second semiconductor region to have p-conductivity. For example, the electrical connection region of first polarity can be electrically conductively connected to the first semiconductor region. Furthermore, the second semiconductor region can be connected to 2023PF01682 April 2, 2025P2023,1581 WO N -. 15 -be electrically conductively connected to the electrical connection region of second polarity or to an electrical connection structure of second polarity. For example, the electrical connection structure of second polarity can have vias that extend from a side of the first semiconductor region facing the electrical connection region of second polarity, through the first semiconductor region and the active zone into the second semiconductor region. Materials based on arsenide, phosphide, or nitride compound semiconductors, for example, are considered for the semiconductor regions or semiconductor layers of the semiconductor body. "Based on arsenide, phosphide, or nitride compound semiconductors" in the present context means that the semiconductor layers contain AlnGamIn1-n-mAs, AlnGamIn1-n-mP, or AlnGamIn1-n-mN, where 0 ^ n ^ 1, 0 ^ m ^ 1, and n + m ^ 1.This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can contain one or more dopants as well as additional components that determine the characteristic physical properties of Al. n Ga m In 1-n-m As-, Al n Ga m In 1-n- mP or AlnGamIn1-n-mN material. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, P, or N), even if these may be partially replaced by small amounts of other substances. According to at least one embodiment or configuration, the electrical connection regions are metallic or metallized regions. 2023PF01682 April 2, 2025P2023,1581 WO N - 16 -According to at least one embodiment or configuration, the optoelectronic semiconductor component has a housing frame that includes the electrical connection regions. The housing frame can have a cavity in which the optoelectronic semiconductor chip and the other components mentioned above are arranged and which is filled by the encapsulation. According to at least one embodiment of a method for producing at least one optoelectronic semiconductor component of the type mentioned above, the method comprises, for example in the order given, the following steps: - Providing at least one semiconductor chip that has a semiconductor body and an electrical connection region of the first polarity, wherein the electrical connection region is arranged on the semiconductor body, - Providing at least one electrical connection region of the first polarity, which is arranged laterally of the at least one optoelectronic semiconductor chip,- Providing at least one connecting element that electrically connects the electrical connection region of the first polarity to the at least one electrical connection region of the first polarity, - Creating a sheath of the at least one connecting element from an insulating material, wherein the insulating material is at least partially deposited electrophoretically, - Creating an encapsulation into which the at least one optoelectronic semiconductor chip and the at least one encased connecting element are embedded, wherein the 2023PF01682 2 April 2025P2023,1581 WO N -, 17 -The sheath is formed from a sheathing material that differs from the insulation material. According to at least one embodiment or configuration, the insulation material is a material that differs from a converter material. During electrophoretic deposition, colloidal particles intended to form the insulation material are deposited under the influence of an electric field on the bare connecting element, which is, for example, a metallic, electrically conductive element such as a bonding wire, and optionally on at least one further electrically conductive surface area. A relatively high voltage in the range of 100 V can be used. With increasing thickness of the insulation material, the deposition rate of the material decreases, so that the electrophoretic deposition proceeds in an essentially self-organized manner. For example, the colloidal particles contain TiO2.According to at least one embodiment or configuration, the insulating material is electrophoretically deposited jointly on the at least one connecting element and at least one electrically conductive surface region of the at least one optoelectronic semiconductor component. For example, all connecting elements and surface regions to be coated can be coated together. This leads to efficient production of the sheaths or layers of insulating material. 2023PF01682 April 2, 2025P2023,1581 WO N -. 18 -According to at least one embodiment or configuration, the encapsulation is produced by means of encapsulation (a so-called casting process). As mentioned above, however, the encapsulation can also be produced by means of a casting process such as injection molding (a so-called molding process). The optoelectronic semiconductor component is particularly suitable for display devices such as scoreboards, symbols, and displays, as well as for lighting and projection devices, and can be used, for example, in vehicle, consumer, and industrial applications. Further advantages, advantageous embodiments, and developments emerge from the exemplary embodiments described below in conjunction with the figures.There show: Figure 1A a schematic side view of an optoelectronic semiconductor component according to a first embodiment in an intermediate stage and Figure 1B a schematic side view of the finished optoelectronic semiconductor component according to the first embodiment, Figure 2A a schematic perspective top view of an optoelectronic semiconductor component according to a second embodiment and Figures 2B and 2C each show stress zones in connecting elements of the optoelectronic semiconductor component under thermomechanical stress and2023PF01682 April 2, 2025P2023,1581 WO N -. 19 -Figure 3 shows a photograph of an optoelectronic semiconductor component according to a third exemplary embodiment. In the exemplary embodiments and figures, identical, similar, or similarly acting elements can each be provided with the same reference numerals. The illustrated elements and their relative sizes are not necessarily to scale; rather, individual elements may be exaggerated for clarity and / or clarity. A first exemplary embodiment of an optoelectronic semiconductor component 100 and a method for its production are explained in more detail with reference to Figures 1A and 1B. For example, the optoelectronic semiconductor component 100 is a radiation-emitting semiconductor component.The optoelectronic semiconductor component 100 can be designed such that, during operation, a major portion of the radiation is emitted on a front side 100A of the semiconductor component 100. A rear side 100B of the semiconductor component 100, opposite the front side 100A, can be provided for mounting the semiconductor component 100, for example, on a connection carrier, such as a printed circuit board. The optoelectronic semiconductor component 100 comprises an optoelectronic semiconductor chip 10, which has a semiconductor body 1 and a connection region 5 of first polarity, wherein the connection region 5 of first polarity is arranged on the semiconductor body 1. The electrical connection region 5 of first polarity forms a 2023PF01682 April 2, 2025P2023,1581 WO N -. 20 -first electrode, such as a p- or n-electrode, of the optoelectronic semiconductor chip 10. The connection region 5 can be located off-center on a side edge of the semiconductor chip 10. For example, the connection region 5 of the first polarity has a rectangular, elongated shape, such as a strip shape, in a plan view of the front side 100A and extends along a side edge 1B of the semiconductor body 1 or along a chip edge 10B of the semiconductor chip 10. The connection region 5 and the side edge 1B or chip edge 10B can be aligned along a second lateral direction L2 (cf. Figure 2A). The semiconductor body 1 can have a first semiconductor region 2 and a second semiconductor region 4 of different conductivity, wherein an active zone 3 can be arranged between the first and second semiconductor regions 2, 4.For example, the first semiconductor region 2 has p-conductivity, while the second semiconductor region 4 has n-conductivity. However, it is also possible for the first semiconductor region 2 to have n-conductivity and the second semiconductor region 4 to have p-conductivity. The active zone 3 is provided, for example, for generating electromagnetic radiation with a wavelength approximately in the visible to infrared spectral range, for example for generating blue light. As mentioned above, materials based on arsenide, phosphide, or nitride compound semiconductors, for example, are considered for the semiconductor regions 2, 3, 4 or the semiconductor body 1. The electrical connection region 5 of the first polarity is electrically connected, in particular, to the first semiconductor region 2. 21 -conductively connected. Furthermore, the second semiconductor region 4 can be electrically conductively connected to an electrical connection structure 6 of second polarity of the semiconductor chip 10. The electrical connection structure 6 can have vias 6A that extend through the first semiconductor region 2 and the active zone 3 into the second semiconductor region 4. For example, the second semiconductor region 4 can be arranged on a side of the active zone 3 facing the front side 100A, and the first semiconductor region 2 can be arranged on a side of the active zone 3 facing away from the front side 100A. The second semiconductor region 4 arranged on the front side 100A can have a different polarity than the electrical connection region 5 of first polarity. The optoelectronic semiconductor chip 10 can have a conversion element 7 arranged on a front side 1A of the semiconductor body 1.As mentioned above, the conversion element 7 is provided for wavelength conversion of the radiation emitted by the semiconductor body 1 or the active zone 3. At least a portion of the radiation can be converted into radiation of a longer wavelength, for example, yellow light. Thus, the optoelectronic semiconductor chip 10 or the optoelectronic semiconductor component 100 can emit mixed-color radiation, for example, white light, during operation. The conversion element 7 can be, for example, a ceramic plate made of converter material or a plastic layer with embedded converter particles.2023PF01682 April 2, 2025P2023,1581 WO N -. 22 -Furthermore, the optoelectronic semiconductor component 100 comprises an electrical connection region 11 of first polarity, which is arranged laterally of the optoelectronic semiconductor chip 10 and follows the optoelectronic semiconductor chip 10 in a first lateral direction L1. The electrical connection region 11 of first polarity is laterally offset from the electrical connection region 5 of first polarity and follows it in the first lateral direction L1. The lateral directions, comprising the first and second lateral directions L1, L2, can run parallel to a main extension plane of the optoelectronic semiconductor component 100. The electrical connection region 11 of first polarity has, for example, a rectangular shape. The electrical connection region 11 of first polarity forms a first electrode, for example a p- or n-electrode, of the optoelectronic semiconductor component 100.The electrical connection region 11 of the first polarity is freely accessible from the outside on the rear side 100B of the optoelectronic semiconductor component 100 and can be electrically contacted. Furthermore, the optoelectronic semiconductor component 100 comprises, as an electrical bridge between the electrical connection region 5 of the first polarity and the electrical connection region 11 of the first polarity, a plurality of connecting elements 12, each of which electrically conductively connects the electrical connection region 5 of the first polarity to the electrical connection region 11 of the first polarity (cf. Figures 1A and 1B). However, it is also possible for the optoelectronic semiconductor component 100 to be electrically connected between the electrical connection region 5 of the first polarity. 23 -and the electrical connection area 11 of the first polarity has only one connecting element 12 (see Figure 2A). The connecting elements 12 each have a sheath 14 made of an insulating material. By sheathing 14 bare connecting elements 13, which are, for example, bonding wires, the connecting elements 12 are more stable and can better withstand thermomechanical loads. As a result, they have better cycle stability. The sheath 14 can cover the bare connecting element 13 at least partially, for example completely, on the circumference. The sheath 14 can also be arranged at ends 12A, 12B of the connecting elements 12. The connecting elements 12 each have a maximum height h1, which is reduced compared to a single connecting element whose current-carrying capacity corresponds to the total current-carrying capacity of the connecting elements 12.The optoelectronic semiconductor component 100 can thus be made particularly flat. The reduced height h1 can be achieved by a smaller thickness of the connecting elements 13. For example, the bare connecting elements 13 can each have a thickness s1 that corresponds approximately to half the thickness of a single bare connecting element and is, for example, 18 µm. This results in a maximum height h1 of, for example, 2.5 x s1 = 45 µm plus the thickness s2 of the cladding 14. For example, the single connecting element can be replaced by four connecting elements 13 of half the thickness. In addition, the semiconductor component 100 can have a redundant connecting element. 24 -so that the failure of a connecting element can be compensated for. First ends 12A of the connecting elements 12 are each arranged on a connection surface 11A of the connection region 11 of first polarity. Second ends 12B of the connecting elements 12 are each arranged on a connection surface 5A of the connection region 5 of first polarity. The connection surface 11A of the connection region 11 is lower than the connection surface 5A of the connection region 5 or is set back in the vertical direction V. The first ends 12A of the connecting elements 12 can be arranged one on top of the other on the electrical connection region 11 of first polarity. However, it is also possible for the first ends 12A of the connecting elements 12 to be arranged next to one another, for example in a row, on the electrical connection region 11 of first polarity.Furthermore, it is possible for the first ends 12A on the electrical connection region 11 of first polarity to be arranged partially on top of one another and partially next to one another. The second ends 12B can be arranged next to one another on the electrical connection region 5 of first polarity. However, it is also possible for at least some of the second ends 12B to be arranged one above the other. Due to the reduced height of the connecting elements 12, their distance from the chip edge 10B is reduced, so that they can more easily come into contact with the optoelectronic semiconductor chip 10 there. Advantageously, however, the insulating material is an electrically insulating material, so that in the event of contact of the 2023PF01682 April 2, 2025P2023,1581 WO N -. 25 -Connecting elements 12 with the optoelectronic semiconductor chip 10 or the second semiconductor region 4, which may have a different polarity than the connecting elements 12, prevent a short circuit. Furthermore, the insulating material may contain a reflective material. This can reduce unwanted absorption by the connecting elements 12, which may contain gold, for example, and thus increase the brightness of the optoelectronic semiconductor component 100. For example, TiO2 is suitable for the insulating material. The insulating material may be a material different from a converter material. In particular, the insulating material is at least partially deposited electrophoretically. Colloidal particles, which may contain TiO2, for example, are deposited on the bare, electrically conductive connecting elements 13 under the influence of an electric field.A relatively high voltage in the range of 100 V can be used here. With increasing thickness of the insulating material, the deposition rate of the material decreases, so that the electrophoretic deposition proceeds essentially self-organized. The electrophoretically deposited material can then be fixed, for example, using silicone. During the electrophoretic deposition, further electrically conductive surface regions of the optoelectronic semiconductor component 100, such as side surfaces 1C of the semiconductor body 1, the connection area 2023PF01682 April 2, 2025P2023,1581 WO N -, can be formed. 26 -11A of the first-polarity connection region 11 and a connection surface 17A of an electrical connection region 17 of second polarity are covered with a layer 16 of the insulating material. For example, the sheathing 14 and the further layers 16 can each be formed with a thickness s2 of at most 50 µm, for example, between 5 µm and 40 µm. Covering the electrically conductive surface regions with the insulating material increases, for example, the thermomechanical stability of the covered regions or the associated components 1, 11, 17. Furthermore, this can reduce the risk of short circuits and improve reliability. Furthermore, in the case of a reflective insulating material, the brightness of the optoelectronic semiconductor component 100 can also be improved.To prevent the coverage of surface areas that are intended, for example, for radiation passage and should therefore be kept free of reflective insulation material, these surface areas can be provided with a dielectric material so that no coating can form during electrophoretic deposition. As shown in Figure 1B, the optoelectronic semiconductor component 100 has a casing 15 into which the optoelectronic semiconductor chip 10 and the connecting elements 12 are embedded. Embedding in the casing 15 occurs after the encapsulation of the 2023PF01682 April 2, 2025P2023,1581 WO N -. 27 -Connecting elements 13 or after electrophoretic deposition. For example, the encapsulation 15 is formed from an encapsulation material that differs from the insulating material. The insulating material has, in particular, greater rigidity than an encapsulation material used for the encapsulation 15. As a result, the connecting elements 12 are less deformed when embedded in the encapsulation 15 and have a longer service life. For example, silicone can be used for the encapsulation 15. The encapsulation material used for the encapsulation 15 can also serve to fix the electrophoretically deposited material. For example, the encapsulation 15 can be produced by means of encapsulation (a so-called casting process) or by means of a molding process such as injection molding (a so-called molding process). The optoelectronic semiconductor chip 10 is laterally enclosed by the encapsulation 15.The encapsulation 15 terminates flush with the conversion element 7 on the front side 100A. Furthermore, the connecting elements 12 are completely embedded in the encapsulation 15, so that they do not protrude from the encapsulation 15 at any point. In particular, the connecting elements 15 on the front side 100A of the optoelectronic semiconductor component 100 do not protrude beyond the encapsulation 15. At the same time, the encapsulation 15 on the front side 100A is step-free and essentially planar, i.e., within the scope of usual manufacturing tolerances. However, it is also possible for the connecting elements 12 to partially protrude from the encapsulation 15 or not to be completely embedded in the encapsulation 15. 2023PF01682 April 2, 2025P2023,1581 WO N -. 28 -Due to the sheathing 14, these are nevertheless adequately protected. The optoelectronic semiconductor component 100 has a housing frame 18 with a cavity 18A in which the optoelectronic semiconductor chip 10 and the connecting elements 12 are arranged. The cavity 18A is filled by the enclosure 15, in which the components comprising the optoelectronic semiconductor chip 10 and the connecting elements 12 are embedded. The housing frame 18 can be formed from a plastic material. The electrical connection regions 11, 17 are embedded in the housing frame 18. The semiconductor chip 10 is arranged on the electrical connection region 17 of second polarity and is attached thereto, for example, by an electrically conductive connecting means (not shown). The second semiconductor region 4 is electrically conductively connected to the electrical connection region 17 by means of the connection structure 6 of second polarity.The electrical connection region 17 of second polarity can be electrically contacted from the outside and is freely accessible, for example, on the rear side 100B of the optoelectronic semiconductor component 100. In particular, the electrical connection region 17 of second polarity is a second electrode of the optoelectronic semiconductor component 100. A second exemplary embodiment of an optoelectronic semiconductor component 100 is explained in more detail with reference to Figure 2A. In this case, the semiconductor chip 10 can be arranged on the electrical connection region 17 of second polarity or on another mounting region. Furthermore, 2023PF01682 April 2, 2025P2023,1581 WO N -. 29 -An electrical connection region 6 of second polarity is arranged on the semiconductor body, which is electrically conductively connected to the second semiconductor region 4 (see Figure 1A) and is electrically conductively connected to the electrical connection region 17 of second polarity by means of a connecting element 19, wherein the connecting element 19 has a sheath (see Figures 1A and 1B) formed from an insulating material. Furthermore, the semiconductor component 100 can have all the features and advantages mentioned in connection with the first exemplary embodiment. In particular, the above statements regarding the connecting elements 12 apply accordingly to the connecting elements 12, 19. In conjunction with Figures 2B and 2C, the results of an analysis of the optoelectronic semiconductor component 100 according to the second exemplary embodiment after ten operating cycles are explained in more detail.For simplification, the analysis is based on an optoelectronic semiconductor component 100 with only one connecting element 12 without a sheath 14 and only one connecting element 19 with a sheath 14. Figure 2B shows the connecting element 12 without a sheath 14 after 10 cycles. Due to the thermomechanical loading during operation, various stress zones (cf. differently hatched areas) occur in the connecting element 12 without a sheath 14. A maximum stress occurs at the point indicated by an arrow. 2023PF01682 April 2, 2025P2023,1581 WO N -. 30 -Figure 2C shows the connecting element 19 with sheath 14 after 10 cycles. Due to the thermomechanical loading during operation, various stress zones (see different hatched areas) also occur in the connecting element 19, with the stress being maximum at the point indicated by an arrow. The overall stress is lower than for the connecting element 12 without sheath 14. The maximum stress for the connecting element 12 without sheath 14 is approximately three times greater than for the connecting element 19 with sheath 14. Consequently, the connecting elements 12, 19 are stabilized by the sheath 14. A third embodiment of an optoelectronic semiconductor component 100 is explained in more detail with reference to Figure 3.Here, the optoelectronic semiconductor component 100 has an electrically conductive surface region arranged on the front side 100A, which is covered by a dielectric material that differs from the insulating material. The dielectric material, for example, silicone, is applied to the electrically conductive surface region in the form of a lens 20. The surface region is provided for the passage of radiation. The dielectric material or the lens 20 prevents the electrically conductive surface region from being coated, for example, with reflective material during electrophoretic deposition. Furthermore, the semiconductor component 100 can have all the features and advantages mentioned in connection with the first and second exemplary embodiments. 2023PF01682 April 2, 2025P2023,1581 WO N -. 31 -Overall, the semiconductor component described here exhibits improved reliability due to the insulation material. The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments. This patent application claims priority from German patent application 102024110634.4, the disclosure of which is hereby incorporated by reference.

[0002] 2023PF01682 April 2, 2025P2023,1581 WO N - 32 -List of reference symbols 1 semiconductor body 1A front side 1B side edge 1C side surface 2 first semiconductor region 3 active zone 4 second semiconductor region 5 connection region of first polarity 5A connection area 6 connection structure of second polarity 6A through-hole 7 conversion element 10 optoelectronic semiconductor chip 10A front side 10B chip edge 11 electrical connection region of first polarity 11A connection area 12 connection element 12A first end 12B second end 13 bare connection element 14 sheath 15 encapsulation 16 layer of insulating material 17 electrical connection region of second polarity 17A connection area 18 housing frame 18A cavity 19 connection element 20 Linse 2023PF01682 April 2, 2025P2023,1581 WO N - 33 - 100 optoelectronic semiconductor component 100A front side 100B back side h1 maximum height, loop height, vertical dimension s1, s2 thickness L1 first lateral direction L2 second lateral direction V vertical direction

Claims

2023PF01682 2. April 2025P2023,1581 WO N - 34 -Patent claims 1. Optoelectronic semiconductor component (100) comprising^ an optoelectronic semiconductor chip (10) comprising^ a semiconductor body (1) and^ an electrical connection region (5) of first polarity arranged on the semiconductor body (1),^ an electrical connection region (11) of first polarity arranged laterally of the optoelectronic semiconductor chip (10),^ at least one connecting element (12) that electrically conductively connects the electrical connection region (5) of first polarity to the electrical connection region (11) of first polarity and has a casing (14) formed from an insulating material, wherein the insulating material is an at least partially electrophoretically deposited material different from a converter material, and^ a casing (15) in which the optoelectronic semiconductor chip (10) and the at least one connecting element (12) are embedded,wherein the encapsulation (15) is formed from a encapsulation material that differs from the insulating material.

2. Optoelectronic semiconductor component (100) according to the preceding claim, wherein the insulating material is electrically insulating.

3. Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the insulating material contains a reflective material. 2023PF01682 2 April 2025P2023,1581 WO N -, 35 -4. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the optoelectronic semiconductor component (100) has at least one electrically conductive surface region covered by a layer (16) of the insulating material.

5. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the optoelectronic semiconductor chip (10) has a chip edge (10B) arranged on a side of the optoelectronic semiconductor chip (10) facing the at least one connecting element (12) and covered by a layer (16) of the insulating material.

6. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the insulating material is arranged only on electrically conductive regions of the optoelectronic semiconductor component (100). 7.The optoelectronic semiconductor component (100) according to any one of the preceding claims, wherein the optoelectronic semiconductor component (100) has at least one electrically conductive surface region covered by a dielectric material that differs from the insulating material.

8. The optoelectronic semiconductor component (100) according to any one of the preceding claims, wherein the insulating material has a higher rigidity than the encapsulation material.2023PF01682 April 2, 2025P2023,1581 WO N -. 36 -9. The optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the at least one connecting element (12) comprises a bonding wire.

10. The optoelectronic semiconductor component (100) according to one of the preceding claims, comprising at least two connecting elements (12), each electrically conductively connecting the electrical connection region (5) of the first polarity to the electrical connection region (11) of the first polarity and each having a sheath (14) formed from the insulating material.

11. The optoelectronic semiconductor component (100) according to the preceding claim, wherein the at least two connecting elements (12) have a smaller thickness than a single connecting element whose current-carrying capacity corresponds to a total current-carrying capacity of the at least two connecting elements (12).Optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the cladding (14) in each case has a thickness (s2) of at most 50 µm.

13. Method for producing at least one optoelectronic semiconductor component (100) according to one of the preceding claims, wherein the method comprises:- providing at least one semiconductor chip (10) having a semiconductor body (1) and an electrical connection region (5) of the first polarity, wherein the electrical connection region (5) is arranged on the semiconductor body (1),- providing at least one electrical connection region (11) of the first polarity, which is arranged laterally of the2023PF01682 April 2, 2025P2023,1581 WO N -. 37 -at least one optoelectronic semiconductor chip (10) is arranged,- providing at least one connecting element (13) which electrically conductively connects the electrical connection region (5) of the first polarity to the at least one electrical connection region (11) of the first polarity,- producing a sheath (14) of the at least one connecting element (13) from an insulating material, wherein the insulating material is at least partially electrophoretically deposited and is a material different from a converter material,- producing an encapsulation (15) into which the at least one optoelectronic semiconductor chip (10) and the at least one encapsulated connecting element (12) are embedded, wherein the encapsulation (15) is formed from an encapsulation material that differs from the insulating material.14.Method according to the preceding claim, wherein the insulating material is deposited jointly on the at least one connecting element (13) and at least one electrically conductive surface region of the at least one optoelectronic semiconductor component (100).

15. Method according to one of the two preceding claims, wherein the encapsulation (15) is produced by means of potting.

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