Method for manufacturing metalized glass substrate

Abstract

The present invention relates to a method for manufacturing a metalized glass substrate and, more specifically, to a method for manufacturing a metalized glass substrate, which secures adhesion and stability between glass, an amorphous material, and a metal electrode layer.

Description

Method for manufacturing metallized glass substrate

[0001] The present invention relates to a method for manufacturing a metallized glass substrate, and more particularly, to a method for manufacturing a glass substrate for a Glass PCB, which secures adhesion and stability between an amorphous material and a metal electrode layer.

[0002] In recent years, electronic devices have become increasingly thinner and lighter in line with the trend toward miniaturization, multi-functionality, and high performance. As the mounting density (high integration) of boards increases, the problem of heat generation due to the amount of current supplied is becoming a growing issue.

[0003] Conventional resin substrates suffer from heat-induced deformation and warpage, as described above. Furthermore, their poor flatness makes them unsuitable as substrates for displays such as Mini LED and Micro LED.

[0004] Currently, extensive research is being conducted on silicon substrates to implement 3D semiconductors using the Through-Silicon-Via (TSV) process. However, silicon, as a semiconductor, inevitably requires an insulating layer. Furthermore, its low resistivity in the high-frequency range leads to insertion loss, which in turn reduces performance.

[0005] Therefore, as an insulator, it has almost no electrical loss even in the high-frequency range, has little mechanical deformation, has excellent surface flatness, and can simultaneously implement a large-area thin substrate, and research is being conducted by many companies and research institutes to replace it with inexpensive glass.

[0006] As mentioned above, glass has many advantages as a semiconductor substrate material, but one of its most fatal shortcomings is that metallization and interconnection are poor, preventing bonding between the glass material and the metal electrode layer.

[0007] Therefore, it is expected that how quickly technology related to bonding between glass substrate materials and metal electrode layers can be secured and applied as a differentiated mass production technology will be a key factor in the semiconductor substrate industry.

[0008] The present invention is intended to solve the above-mentioned problems, and the purpose of the present invention is to provide a method for processing a glass material and forming a metal layer so as to secure adhesion between a glass substrate material and a metal electrode layer, thereby increasing reliability as a semiconductor substrate.

[0009] The purpose of the present invention is to provide a method that does not use chemical processes such as catalytic / electroless plating, which cause electrical short-circuits due to the introduction of foreign substances into the surface of a substrate and the inner wall of a hole during the conventional complex pretreatment and process steps, and which are difficult to treat wastewater and have poor workability due to the use of strong alkaline, strong acid and toxic substances.

[0010] The present invention is a technology for securing adhesion by forming a thin film through surface treatment and a sputtering process, and has a considerably simpler process compared to conventional technologies, provides an economical method, and significantly reduces process defects, thereby providing a method that does not cause a decrease in yield.

[0011] The purposes of the present invention are not limited to the purposes mentioned above, and the above and other purposes and advantages will become apparent from the following description of preferred embodiments.

[0012] The above object can be achieved by a method for manufacturing a metallized glass substrate for a semiconductor or display, comprising the steps of: preparing a glass material; performing a first surface treatment on the surface of the glass material; performing a second surface treatment on the first surface-treated glass material; sequentially performing n-th surface treatments on the second surface-treated glass material; forming a first metal layer on the surface of the glass material on which n-th surface treatments have been completed; forming a second metal layer on the first metal layer; and forming a metal electrode layer on the second metal layer; and performing a heat treatment after forming the electrode layer; wherein the n-th time is 3 to 8 times.

[0013] The above glass material may include oxide glasses such as silicate glass, borate glass, phosphate glass, germanate glass, aluminate glass, vanadate glass, tungstate glass, molybdate glass, etc., and is characterized by not being limited by differences in the composition of metal oxides such as Al, Ca, Mg, Na, K, Pb, B, Ba, Ce, Fe, Zn, etc.

[0014] The above primary surface treatment is characterized in that it is performed by ionizing using a linear ion beam in a vacuum chamber using an active gas or an inert gas as a reaction gas. The above primary surface treatment may include O2, N2, H2 or Ar gas as a reaction gas, and may also be performed by mixing two or more types.

[0015] The above surface treatment is performed in a vacuum chamber with a vacuum level of 5x10 -5 -5x10 -6 After creating a vacuum of 1 torr, reactive gas is injected into it to 1x10 -2 -1x10 -4 It can be performed after torr is made.

[0016] The above 2nd to nth surface treatment is characterized in that it is performed by ionizing using a linear ion beam with an active gas as a reaction gas. The above 2nd to nth surface treatment is performed using O2, N2, H 2, and It is characterized in that it is performed using at least one selected from the group consisting of Ar gas as a reaction gas.

[0017] The ion dose density (ion amount) in the above linear ion beam is 1x10 -14 5x10 -19 dose / cm 2 It is characterized by being performed in the region of , and the input voltage of the ion beam is characterized by being in the region of 0.5 to 3.0 kV.

[0018] The step of forming the first metal layer is characterized by using one metal or two or more alloys selected from the group consisting of copper (Cu), nickel (Ni), chromium (Cr), titanium (Ti), zinc (Zn), aluminum (Al), zirconium (Zr), molybdenum (Mo), niobium (Nb), and ruthenium (Ru).

[0019] The step of forming the first metal layer is characterized by performing a physical vapor deposition (PVD) or thermal evaporation process.

[0020] The step of forming the second metal layer is characterized by using at least one metal selected from the group consisting of copper (Cu), silver (Ag), gold (Au), platinum (Pt), and alloys thereof. The step of forming the second metal layer is also characterized by performing a physical vapor deposition (PVD) or thermal evaporation process.

[0021] The above metal electrode layer is characterized in that it is formed through electroless / electrolytic plating using a metal such as gold (Au), silver (Ag), cobalt (Co), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), or copper (Cu).

[0022] The present invention has the effect of providing a substrate that can be competitive as a 3D semiconductor substrate in the future by securing adhesion between a glass substrate and a metal electrode layer.

[0023] The peel strength of thin copper (Copper, 12-20um) required in the current GCB (Glass Circuit Board) industry is at a level of 2-3 N / cm, but the present invention has the effect of having a peel strength that is much better than the peel strength value required in the industry.

[0024] The present invention provides a glass material having improved adhesive strength by performing primary, secondary, and n-th surface treatments using ion beam surface treatment to increase the surface energy of the material, and in particular, a glass material having improved adhesive strength depending on the type, flow rate, and mixture of gases used in the surface treatment. In addition, depending on the type, thickness, and alloy composition of the first metal layer, the adhesion between the glass material, which is an insulator, and the metal electrode, which is a conductor, can be increased, and the bonding stability can be improved.

[0025] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the composition of the invention described in the detailed description or claims of the present invention.

[0026] Figure 1 is a flowchart sequentially showing a method for manufacturing a metallized glass substrate according to one embodiment of the present invention.

[0027] FIG. 2 is a schematic diagram showing the layered structure of a metallized glass substrate manufactured according to one embodiment of the present invention.

[0028] FIG. 3 is a schematic diagram showing the layered structure of a metallized glass substrate manufactured according to another embodiment of the present invention.

[0029] Figure 4 is a drawing showing the contact angle measurement results according to Experimental Example 1 of the present invention.

[0030] Figure 5 is a drawing showing the results of peel strength measurement according to Experimental Example 2 of the present invention.

[0031] Figure 6 is a drawing showing the results of peel strength measurement according to Experimental Example 3 of the present invention.

[0032] Figure 7 is a drawing showing the results of peel strength measurement according to Experimental Example 4 of the present invention.

[0033] The embodiments in this specification are merely provided as examples to more specifically explain the present invention, and are not limited to the embodiments described herein and may be embodied in other forms.

[0034] However, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to sufficiently convey the spirit of the present disclosure to those skilled in the art.

[0035] Additionally, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, and in case of conflict, the description in this specification, including definitions, shall prevail.

[0036] In order to clearly explain the present invention in the drawings, parts unrelated to the description have been omitted, and similar parts have been given similar drawing reference numerals throughout the specification.

[0037] And when we say that a part “includes” a component, we mean that it may include other components, but not to the exclusion of other components, unless otherwise specifically stated.

[0038] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings.

[0039] FIG. 1 is a flowchart sequentially showing a method for manufacturing a metallized glass substrate according to one embodiment of the present invention, and FIG. 2 is a schematic diagram showing a layered structure of a metallized glass substrate.

[0040] Referring to FIGS. 1 and 2 together, it will be helpful in understanding the method for manufacturing the metallized glass substrate described above. The present invention includes the steps of: preparing a glass material; performing a first surface treatment on the surface of the glass material (S10); performing a second surface treatment on the first surface-treated glass material (S20); performing n-th surface treatment sequentially on the second surface-treated glass material (S30); forming a first metal layer on the surface of the glass material on which the n-th surface treatment has been completed (S40); forming a second metal layer on the first metal layer (S50); and forming a metal electrode layer on the second metal layer (S60), and heat-treating the glass material on which the metal electrode layer has been formed (S70).

[0041] First, glass material (100) can be prepared.

[0042] The glass material (100) of the present invention may include oxide glasses such as silicate glass, borate glass, phosphate glass, germanate glass, aluminate glass, vanadate glass, tungstate glass, molybdate glass, etc., and is not limited to materials according to the addition of metal oxides (SiO2, Al2O3, CaO, MgO, Na2O, K2O, PbO, B2O3, BaO, V2O5, P2O5, Bi2O3, ZnO, CaF2, CdO, Ag2O, Li2O) and composition differences for imparting functionality such as improved chemical durability, suppression of glass crystallization, high insulation, and easy X-ray and magnetic / infrared transmission. The glass materials used in the above examples were glass from Corning and SCHOTT.

[0043] It is preferable that the thickness of the above glass material (100) be formed to be, for example, 200 to 700 ㎛.

[0044] Next, the surface of the glass material (100) can be subjected to primary surface treatment (201). (S10)

[0045] The above first surface treatment is a surface treatment using an ion beam, which minimizes changes in the shape of the glass surface and enables the imparting of hydrophilic functional groups and the formation of dangling bonds.

[0046] The above first surface treatment (201) can be performed by ionizing an ion beam, specifically, a linear ion beam, using an active gas or an inert gas as a reaction gas. The surface treatment using an ion beam can be performed by irradiating the surface of the glass material (100) with an ion beam containing a reaction gas accelerated with energy in a specific range. For example, the first surface treatment reaction gas can include O2, N2, H2, or Ar gas, and can be performed by mixing two or more types.

[0047] The present invention preferably uses a low-energy ion beam as the ion beam, and the voltage input to the ion beam can be applied in the range of 0.5 to 3.0 kV. When the input voltage of the ion beam of the present invention is as described above, the surface can be modified without deformation of the material, thereby achieving effects such as a cleaning effect, hydrophilicity, bonding strength, and nanostructure formation.

[0048] The injection amount of the above reaction gas may be, for example, 1 to 100 sccm (Standard Cubic Centimeter per Minute), preferably 30 to 100 sccm, and more preferably 40 to 70 sccm, and within this range, the surface of the glass material can be stably irradiated with an ion beam.

[0049] The irradiation time of the above ion beam is not particularly limited and can be appropriately adjusted depending on the purpose.

[0050] The ion dose density irradiated on the surface of the glass material through the above low-energy ion beam is 1x10 -14 5x10 -19 dose / cm 2 , preferably 1x10 -16 5x10 -19 dose / cm 2 , more preferably 1x10 -16 5x10 -18 dose / cm 2 It can be adjusted to consist of the following areas.

[0051] When ion beams are irradiated under the conditions described above, the effects of high adhesion to metal and excellent surface properties can be maximized, and later, the effect of increasing the bonding stability between the glass material and the metal electrode layer can be exerted.

[0052] Next, the glass material that has been subjected to primary surface treatment (201) can be subjected to secondary surface treatment (S20).

[0053] The above secondary surface treatment can be performed using an ion beam, specifically a linear ion beam, with an ionized active gas or inert gas as the reaction gas. Like the primary surface treatment, it can include O2, N2, H2, or Ar gas, and can be performed by mixing two or more types.

[0054] Next, the secondary surface-treated glass material can be sequentially surface-treated up to n times (S30). In other words, this means that the surface of the secondary surface-treated glass material is surface-treated multiple times in succession, and at this time, the nth surface treatment (200) may include surface treatments performed at least three times, specifically, from 3 to 8 times, but is not limited thereto.

[0055] In the present invention, by sequentially performing the first surface treatment and the second to nth surface treatments on the glass material as described above, the formation of functional groups such as carboxyl groups and hydroxyl groups on the glass surface is promoted, inducing chemical interactions with glass oxide chains, thereby significantly improving adhesion to different materials or substances. In addition, significant differences were observed depending on the injection amount, type, and mixture of reaction gases, and the voltage of the ion beam.

[0056] Accordingly, when forming various types of conductive metal layers on the surface formed through the surface treatment described above, excellent reliability (thermal shock, high temperature, moisture, etc.) between the heterogeneous materials of the glass material and the metal electrode layer can be secured.

[0057] Next, a first metal layer (300) can be formed on the surface of the glass material on which the nth surface treatment (200) has been completed (S40).

[0058] The above first metal layer (300) can be used as one metal or two or more alloys selected from the group consisting of copper (Cu), nickel (Ni), chromium (Cr), titanium (Ti), zinc (Zn), aluminum (Al), zirconium (Zr), molybdenum (Mo), niobium (Nb), and ruthenium (Ru).

[0059] The step of forming the first metal layer may be performed by a physical vapor deposition (PVD) or thermal evaporation process.

[0060] The deposition thickness of the above first metal layer (300) may be, for example, 10 to 100 nm, preferably 10 to 80 nm, and more preferably 10 to 60 nm, but is not limited thereto. The first metal layer of the present invention is for improving the bonding strength between the glass material and the second metal layer. When the deposition thickness on the surface of the surface-treated glass material is as described above, it sufficiently functions as a tie layer while not making the substrate excessively thick, which is advantageous for post-processing.

[0061] Next, a second metal layer (400) can be formed on the first metal layer (300) (S50).

[0062] The step of forming the second metal layer (400) may use one or more metals selected from the group consisting of copper (Cu), silver (Ag), gold (Au), platinum (Pt), and alloys thereof.

[0063] The type of metal constituting the second metal layer (400) may be the same as or different from the type of metal constituting the first metal layer (300).

[0064] As a method for forming the second metal layer (400), a physical vapor deposition (PVD) or thermal evaporation process can be performed.

[0065] The deposition thickness of the second metal layer (400) is preferably formed to be, for example, 100 to 700 nm, preferably 200 to 600 nm. When the thickness of the second metal layer is as described above, it can sufficiently serve as a main metal layer for wiring and patterns.

[0066] Next, a step (S60) of forming a metal electrode layer (500) on the second metal layer (400) is included.

[0067] The above metal electrode layer (500) can be formed, for example, through electroplating or electroless plating, and can be performed through a method commonly used in the field of plating technology.

[0068] The above metal electrode layer (500) may be made of gold (Au), silver (Ag), cobalt (Co), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), or copper (Cu), and preferably, copper may be used, but is not limited thereto.

[0069] The thickness of the above metal electrode layer (500) can be formed to be 2 to 20 μm.

[0070] Next, the metal electrode layer (500) can be heat-treated (S70). The heat treatment can be performed for the purpose of relieving stress after plating of the metal electrode layer, diffusion between materials / metals or metals / metals, and improving peel strength.

[0071] The above heat treatment can be performed using an electric furnace, but is not limited thereto, and a heater or other furnace may also be used.

[0072] The above heat treatment may vary depending on the type and composition of the glass material, but is preferably performed at a temperature of, for example, 100 to 600°C. If the temperature of the heat treatment is less than 100°C, it is difficult to form an intermetallic compound between the first metal layer and the second metal layer, and if it exceeds 600°C, excessive heating may occur, which may cause warpage or cracking problems due to the difference in thermal expansion coefficient between the glass and the metal.

[0073] The structure of a metallized glass substrate manufactured according to one embodiment of the present invention may include a glass material (100); a first surface treatment layer (201) formed on a surface of the glass material (100); an n-th surface treatment layer (200) formed on the first surface treatment layer (201); a first metal layer (300) formed on the n-th surface treatment layer (200); a second metal layer (400) formed on the first metal layer (300); and a metal electrode layer (500) formed on the second metal layer (400).

[0074] At this time, the term “surface treatment layer” is described to facilitate explanation by illustrating the layer structure, and it is preferable to interpret the meaning of the “surface treatment layer” as meaning the state of the surface-treated coating film.

[0075] Figure 3 is a schematic diagram showing the layered structure of a metallized glass substrate manufactured according to another embodiment of the present invention.

[0076] Referring to Fig. 2, the same process is performed on the lower surface of the glass material (100) to demonstrate that the substrate can also be formed into a composite structure.

[0077] In addition to the aforementioned structure, those skilled in the art can develop a 3D semiconductor substrate by changing the design of the multilayer structure, manufacturing process, etc.

[0078] According to one embodiment of the present invention, a method for manufacturing a metallized glass substrate is provided to secure adhesion between the glass substrate and a metal electrode layer.

[0079] Specifically, according to the present invention, by performing primary, secondary, and n-th surface treatments using low-energy ion beams, the effects of cleaning, nanostructure formation, and chemical modification of the surface of a glass material can be achieved, and dangling bongs can be formed to enhance the reactivity between different materials. In addition, by performing a multilayer metal thin film deposition and plating process, the adhesion between the glass material, which is an insulator, and the metal electrode, which is a conductor, can be increased and the bonding stability can be imparted.

[0080] Hereinafter, the composition and resulting effects of the present invention will be described in more detail through specific examples and comparative examples. However, these examples are intended to more specifically illustrate the present invention, and the scope of the present invention is not limited to these examples.

[0081] [Example 1]

[0082] For 500㎛ thick Borosilicate Glass (Eagle XG) glass material, a linear ion beam was used to react Ar gas on the surface of the glass, and the ion dose density was 5X10 -14 dese / cm 2 , the first surface treatment was performed at a speed of 0.5 m / min. The input voltage was 1.0 kV.

[0083] [Example 2]

[0084] In Example 1, for the glass material subjected to the primary surface treatment, Ar gas was used as a reaction gas on the surface of the glass, and the ion dose density was 5X10 -14 dese / cm 2 , the second and third surface treatments were performed at a speed of 0.5 m / min. The input voltage was 1.0 kV.

[0085] [Example 3]

[0086] In Example 2, for the glass material subjected to the third surface treatment, Ar gas was used as a reaction gas on the surface of the glass, and the ion dose density was 5X10 -14 dese / cm 2 , the 4th and 5th surface treatments were performed at a speed of 0.5 m / min. The input voltage was 1.0 kV.

[0087] [Example 4]

[0088] In Example 3, for the glass material subjected to the 5th surface treatment, Ar gas was used as a reaction gas on the surface of the glass, and the ion dose density was 5X10 -14 dese / cm 2 , the 6th to 8th surface treatment was performed at a speed of 0.5 m / min. The input voltage was 1.0 kV.

[0089] <Experimental Example 1: Confirmation of surface modification effect according to surface treatment level>

[0090] In order to confirm the surface modification effect according to the Nth surface treatment, untreated (control group), 1st surface treatment (Example 1), 3rd (Example 2), 5th (Example 3), and 8th (Example 4) surface treatments were set as experimental groups.

[0091] The modification effect was confirmed by measuring the contact angle. A smaller contact angle indicates increased hydrophilicity of the glass surface and improved adhesion to the metal layer.

[0092] As a result of surface treatment, the contact angle was 38.8° for the control group, 17.2° for the first surface treatment, 9.3° for the third surface treatment, and 3-4° after the fifth surface treatment, indicating complete hydrophilicity. This is shown in Fig. 4.

[0093] <Experimental Example 2: Measurement of Peel Strength According to Ion Dose Density>

[0094] An experiment was conducted to measure the peel strength according to the ion dose density.

[0095] For the 500㎛ thick Borosilicate Glass (Eagle XG) glass material, a linear ion beam was used to inject Ar gas as a reaction gas onto the surface of the glass at an input voltage of 1.0kV and a speed of 0.5m / min, and the ion dose density was 5X10 -13 dese / cm 2 (Control group), 5X10 -14 dese / cm 2 , 5X10 -15 dese / cm 2 , 5X10 -16 dese / cm 2 , 5X10 -17 dese / cm 2 , 5X10 -18 dese / cm 2 Each of them underwent 5th surface treatment.

[0096] Afterwards, Ti 30 nm was deposited as the first metal layer and Cu 500 nm as the second metal layer, and then electroplated to a thickness of 18 μm. Afterwards, heat treatment was performed at 250°C for 1 hour in an Ar atmosphere electric furnace, and the peel strength was confirmed through the 90° peel strength measurement method according to JIS C 6481. It is shown in Fig. 5.

[0097] Referring to Figure 5, 5X10 -13 dese / cm 2 In the conventional case, the peel strength value of about 2~3 N / cm was confirmed, and the ion dose density was 5X10 -14 dese / cm 2 ~ 5X10 -18 dese / cm 2 When surface treatment was performed in the range, it was confirmed that the value was improved compared to the conventional peel strength.

[0098] <Experimental Example 3: Measurement of Peel Strength According to Gas Type>

[0099] A peel strength measurement experiment was conducted according to the type of gas. In order to improve the bonding strength between the glass and metal layer during the nth surface treatment, O2, N2, H2, and Ar gases were set as the experimental group, either single or mixed. The input voltage was 1.0 kV, and the ion dose density was 5X10 -18 dese / cm 2 It was fixed and the surface treatment was performed up to 5 times under all conditions. After the surface treatment, the peel strength was measured in the same manner as in Experimental Example 2. It is shown in Fig. 6. When the surface treatment was performed using O2 gas, it was confirmed that the bonding strength with the metal was further improved by forming and modifying the non-crosslinked dangling bond of the glass surface oxide layer.

[0100] <Experimental Example 4: Measurement of peel strength according to the type of first metal layer>

[0101] A peel strength measurement experiment was conducted according to the type of the first metal layer. A control group without the first metal layer was set as the experimental group, and Ni and Ti were set as the experimental group. The input voltage was 1.0 kV, and the ion dose density was 5X10 -18 dese / cm 2 It was fixed as , and surface treatment was performed up to 5 times with O2 gas under all conditions. For the first metal layer, Ni and Ti were each deposited at 30 nm, and for the second metal layer, Cu 500 nm was deposited, and then electroplated to a thickness of 18 μm. After that, heat treatment was performed at 250°C for 1 hour in an Ar atmosphere electric furnace, and the peel strength was confirmed through the 90° peel strength measurement method according to JIS C 6481. The results are shown in Fig. 7.

[0102] It should be understood that the embodiments described above are illustrative in all respects and are not limiting. For example, each component described as a single unit may be implemented in a distributed manner, and likewise, components described as distributed may be implemented in a combined manner.

[0103] The scope of the present invention is indicated by the claims set forth below, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

[0104] The present invention is a method for manufacturing a metallized glass substrate, which can be used to manufacture a glass substrate for a Glass PCB by securing adhesion and stability between an amorphous material and a metal electrode layer.

Claims

1. Step for preparing glass materials; A step of performing a primary surface treatment on the surface of the above glass material; A step of performing a second surface treatment on a glass material that has been first surface treated; A step of sequentially performing surface treatments up to n times on a secondary surface-treated glass material; A step of forming a first metal layer on the surface of a glass material on which n-th surface treatment has been completed; A step of forming a second metal layer on the first metal layer; A step of forming a metal electrode layer on the second metal layer; and A step of heat-treating a glass material on which a metal electrode layer is formed; including; A method for manufacturing a metallized glass substrate, characterized in that the above n-th order is 3 to 8.

2. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the glass material is silicate glass, borate glass, phosphate glass, germanate glass, aluminate glass, vanadate glass, tungstate glass or molybdate glass.

3. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the first surface treatment is performed by ionizing using a linear ion beam with an active gas or an inert gas as a reaction gas.

4. A method for manufacturing a metallized glass substrate, characterized in that in the third paragraph, the reaction gas of the first surface treatment includes at least one selected from the group consisting of O2, N2, H2, and Ar gases.

5. A method for manufacturing a metallized glass substrate, characterized in that in the fourth paragraph, the injection amount of the reaction gas is in the range of 1 to 100 sccm (Standard Cubic Centimeter per Minute), or 30 to 100 sccm, or 40 to 70 sccm.

6. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the second to nth surface treatments are performed by ionizing using a linear ion beam using an active gas or an inert gas as a reaction gas.

7. A method for manufacturing a metallized glass substrate, characterized in that in paragraph 6, the reaction gas of the second to nth surface treatment includes at least one selected from the group consisting of O2, N2, H2, and Ar gases.

8. In the third paragraph, the ion dose density irradiated onto the surface of the glass material through a linear ion beam is 1x10 14 5x10 19 dose / cm 2 A method for manufacturing a metallized glass substrate, characterized in that it is formed of an area.

9. A method for manufacturing a metallized glass substrate, characterized in that in the 8th paragraph, the voltage input from the linear ion beam is in the range of 0.5 to 3.0 kV.

10. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the step of forming the first metal layer uses one metal or two or more alloys selected from the group consisting of copper (Cu), nickel (Ni), chromium (Cr), titanium (Ti), zinc (Zn), aluminum (Al), zirconium (Zr), molybdenum (Mo), niobium (Nb), and ruthenium (Ru).

11. A method for manufacturing a metallized glass substrate, characterized in that in the 10th paragraph, the deposition thickness of the first metal layer is in the range of 10 to 100 nm, or 10 to 80 nm, or 10 to 60 nm.

12. A method for manufacturing a metallized glass substrate, characterized in that in the step of forming the first metal layer in the 11th paragraph, a physical vapor deposition (PVD) or thermal evaporation process is performed.

13. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the step of forming the second metal layer (400) uses at least one metal selected from the group consisting of copper (Cu), silver (Ag), gold (Au), platinum (Pt) and alloys thereof.

14. A method for manufacturing a metallized glass substrate, characterized in that in claim 13, the deposition thickness of the second metal layer is in the range of 100 to 700 nm.

15. A method for manufacturing a metallized glass substrate, characterized in that in the step of forming the second metal layer in the 14th paragraph, a physical vapor deposition (PVD) or thermal evaporation process is performed.

16. A method for manufacturing a metallized glass substrate, characterized in that in the first paragraph, the metal electrode layer is formed by performing electroplating or electroless plating using gold (Au), silver (Ag), cobalt (Co), aluminum (Al), iron (Fe), nickel (Ni), chromium (Cr), or copper (Cu) metal.

17. A method for manufacturing a metallized glass substrate, characterized in that the heat treatment in the first paragraph is performed at a temperature of 100 to 600°C using a furnace.

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