Apparatus for and method of masking an edge of a substrate of a deposition process

Abstract

An apparatus for masking an edge of a substrate during a deposition process is provided. The apparatus comprises a deposition mask with a mask frame and one or more masking elements configured to form an edge exclusion mask; an interface to receive at least one temperature information; at least one temperature adjustor configured to adjust a temperature of the one or more masking elements; a temperature controller for controlling the at least one temperature adjustor to adjust the temperature of the one or more masking elements based on the at least one temperature information.

Description

APPARATUS FOR AND METHOD OF MASKING AN EDGE OF A SUBSTRATE OF A DEPOSITION PROCESSTECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to methods and apparatuses for masking an edge of a substrate of a deposition process. More particularly, embodiments of the present disclosure relate to a temperature control of a deposition mask, in particular of an edge exclusion mask, specifically to mask structures configured for deposition of a layer on a substrate.BACKGROUND

[0002] Several methods are known for depositing a material on a substrate. For instance, substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc. The process is performed in a process apparatus or process chamber, where the substrate to be coated is located. A deposition material is provided in the apparatus. A plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on a substrate.

[0003] Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT, color filters or the like.

[0004] In coating processes, it may be useful to use masks, for instance, in order to better define the area to be coated. In some applications, only parts of the substrateshould be coated and the parts not to be coated are covered by a mask. In some applications, such as in large area substrate coating apparatuses, it can be useful to exclude the edge of the substrate from being coated. With the exclusion of the edge, e.g. by an edge exclusion mask, it is possible to provide coating free substrate edges and to prevent a coating of the backside of the substrate. For example, LCD monitor layer deposition, as one of many other applications, requires a non-coated substrate edge. The above-described mask covers the non-coated area of the substrate.

[0005] However, the mask in a material deposition process, which may be an edge exclusion mask, is also exposed to the deposition material due to the location of the mask in front of the substrate. A variation of the temperature of the mask, in particular during a deposition process, may result in mechanical and thermal stress of the deposition material deposited on the mask and peeling off of particles. The peeled-off particles may result in impurities or defects of the deposited layers on the substrate.

[0006] In view of the above, apparatuses and methods for masking an edge of a substrate of a deposition process would be beneficial which could overcome at least some of the problems in the art.SUMMARY

[0007] In light of the above, apparatuses and methods for masking an edge of a substrate of a deposition process are provided according to the independent claims. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0008] According to an aspect, an apparatus for masking an edge of a substrate of a deposition process is provided. The apparatus comprises a deposition mask with a mask frame and one or more masking elements configured to form an edge exclusion mask; an interface to receive at least one temperature information; at least one temperature adjustor configured to adjust a temperature of the one or more masking elements; and a temperature controller for controlling the at least one temperature adjustor to adjust the temperature of the one or more masking elements based on the at least one temperature information.

[0009] In some embodiments, the apparatus further comprises a first temperature sensor configured to determine a first temperature of a first masking element of the one or more masking elements.

[0010] In some embodiments, the temperature adjustor is configured to inductively heat at least one of the one or more masking elements.

[0011] In some embodiments, the temperature adjustor comprises at least one Peltier element configured to be attached to or be inserted into at least one of the one or more masking elements.

[0012] In some embodiments, the deposition mask comprises at least one channel through which a heat transfer liquid, particularly water, or a heat transfer gas can pass.

[0013] According to another aspect, a vapor deposition chamber is provided. The vapor deposition chamber comprises the apparatus for masking an edge of a substrate of a deposition process according to any of the embodiments described herein.

[0014] According to another aspect, a method of masking an edge of a substrate of a deposition process with a deposition mask comprising a mask frame and one or more masking elements configured to form an edge exclusion mask is provided. The method comprises receiving at least one temperature information, and controlling a temperature of the one or more masking elements based on the at least one temperature information by controlling at least one temperature adjustor.BRIEF DESCRIPTION OF THE DRAWINGS

[0015] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:

[0016] FIG. 1 shows a deposition chamber with an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein;

[0017] FIG. 2a shows a schematic cross-section of an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein;

[0018] FIG. 2b shows the apparatus for masking an edge of a substrate of a deposition process of FIG. 2a with additional features;

[0019] FIG. 3 shows a schematic view of a plurality of masking elements and temperature sensors according to embodiments described herein;

[0020] FIG. 4a schematically shows a temperature adjustor of an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein;

[0021] FIG. 4b schematically shows a temperature adjustor of an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein;

[0022] FIG. 5a schematically shows a temperature adjustor of an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein

[0023] FIG. 5b schematically shows a temperature adjustor of an apparatus for masking an edge of a substrate of a deposition process according to embodiments described herein.

[0024] FIG. 6 schematically illustrates a method for masking an edge of a substrate of a deposition process according to embodiments described herein.DETAILED DESCRIPTION

[0025] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with any other embodiment to yield yet a further embodiment. It is intended that the presentdisclosure includes such modifications and variations. Within the following description of the drawings, the same reference numbers refer to the same or to similar components. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one embodiment can apply to a corresponding part or aspect in another embodiment as well.

[0026] FIG. 1 shows a schematic view of an apparatus 1000 for layer deposition on a substrate 100 according to embodiments described herein. The deposition apparatus 1000 is adapted for a deposition process, such as a PVD or CVD process and includes a deposition chamber 112, particularly a vapor deposition chamber, for layer deposition. One or more substrates 100 are shown being located on a substrate transport device 125. According to some embodiments, the substrate support may be movable to allow for adjusting the position of the substrate 100 in the deposition chamber 112. Particularly for large area substrates as described herein, the deposition can be conducted having a vertical substrate orientation or an essentially vertical substrate orientation. The substrate transport device 125 can have or roll on lower rollers 122, which are driven by one or more drives, e.g. motors. The drives can be connected to a roller 122 by a shaft for rotation of the roller so that it is possible that one motor drives more than one roller, e.g. by connecting rollers with a belt, a gear system, or the like.

[0027] Rollers can be used for support of the substrates in the vertical or essentially vertical position. The substrates can be vertical or can slightly deviate from the vertical position, e.g. up to 5°. Large area substrates having substrate sizes of 1 m2to 10 m2are very thin, e.g. below 1 mm, such as 0.7 mm or even 0.5 mm. In order to support the substrate and to provide the substrates in a fixed position, the substrates are provided in a carrier during processing of the substrates. Accordingly, the substrates can be transported by the transport system including, e.g., a plurality of rollers and drives while being supported in a carrier. For example, the carrier with the substrates therein is supported by the system of rollers 122.

[0028] A plurality of deposition material sources 124 is provided in the deposition chamber 112, facing the side of the substrate to be coated. The deposition materialsources 124 provide deposition material to be deposited on the substrate 100. According to embodiments described herein, the deposition material sources 124 may be a target with deposition material thereon or any other arrangement allowing material to be released for deposition on substrate 100. The material source may be a rotatable target. According to some embodiments, the material source may be movable in order to position and / or replace the source. According to other embodiments, the material source may also be a planar target.

[0029] According to some embodiments, the deposition material may be chosen according to the deposition process and the later application of the coated substrate. For instance, the deposition material of the source may be a material selected from the group consisting of: a ceramic material, a metal, such as aluminum, molybdenum, titanium, copper, or the like, silicon, indium tin oxide, and other transparent conductive oxides. Oxide-, nitride- or carbide-layers, which can include such materials, can be deposited by providing the material from the source or by reactive deposition, i.e. the material from the source reacts with elements like oxygen, nitride, or carbon from a processing gas. According to some embodiments, thin film transistor materials like siliconoxides, siliconoxynitrides, siliconnitrides, aluminumoxide, aluminumoxynitrides may be used as deposition material.

[0030] Embodiments described herein particularly relate to deposition of materials, e.g. for display manufacturing on large area substrates. According to some embodiments, large area substrates or carriers supporting one or more substrates may have a size of 0.5 m2or larger, particularly of 1 m2or larger. For instance, the deposition system may be adapted for processing large area substrates, such as substrates of GEN 4.5, which corresponds to approximately 0.67 m2of substrate (0.73 m x 0.92 m), GEN 5, which corresponds to approximately 1 .4 m2substrates (1.1 m x 1 .3 m), GEN 6, which corresponds to approximately 2.7 m2(1.5 m x 1.8 m), GEN 7.5, which corresponds to approximately 4.29 m2substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to approximately 5.7 m2substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to approximately 8.7 m2substrates (2.85 m x 3.05 m). Even larger generations such as GEN 10.5, GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. According to yet further implementations, halfsizes of the above-mentioned substrate generations can be processed. Alternativelyor additionally, semiconductor wafers may be processed and coated in deposition systems according to the present disclosure.

[0031] The deposition apparatus 1000 includes a deposition mask with a mask frame and one or more masking elements. The mask frame may provide an orientation and / or alignment of the deposition mask and may support the one or more masking elements. According to some embodiments, the deposition mask is an edge exclusion mask including an edge region with an edge, wherein the edge is adapted to have an inclination angle with respect to the substrate of 20° or less. The edge exclusion mask ensures that the edges of the substrate 100 are not coated with deposition material. As an example, the material is sputtered or can also be vaporized. According to embodiments described herein, an edge of the substrate 100 remains free of deposition material due to the edge exclusion mask.

[0032] In FIG. 1 , two edge exclusion masks are shown. The left edge exclusion mask is illustrated to include individual frame portions 101 , 102, 103, 104, 105, 106, 107, 108, 109 and 110 which are connected to form the mask frame 120. A mask structure particularly for large area substrates may be provided by at least 4 corner masking elements 131 , 133, 136, and 138, which can be essentially L-shaped and which may include the corner area or at least a significant portion of the corner area, and with side portions, which connect the corner parts to form the mask frame 120. The mask structure of FIG. 1 is further provided by masking elements 130, 132, 134, 135, 137 and 139. The frame portions 101 -110 may be arranged in a tongue-and- groove arrangement. The tongue-and-groove arrangement provides fixed positions of the frame portions relative to one another. Further, according to some embodiments described herein, the tongue-and-groove arrangements of the frame portions allow the movement of the frame portions away from each other. A tongue-and-groove arrangement enables the frame portions to slide away from each other without causing a gap through which deposition material could pass. The masking elements may comprise elevations, in other words bumps, forming an embossed masks. According to some embodiments, the masking elements may be without embossement. For reasons of simplicity, only the left mask structure is shown with frame portions 101 - 110 and masking elements 130-139. Similarly, more than one or all mask structures in a processing system can be provided with more than one portion to form the maskframe 120.

[0033] According to typical embodiments, which can be combined with other embodiments described herein, the one or more deposition chambers 112 can be provided as vacuum chambers. The deposition chambers 112 are adapted for processing and / or coating the substrates in a vacuum environment. The pressure can be below 10 mbar, e.g. between 1x1 O’7mbar and 1x10’1mbar. Thus, deposition system may include a pumping system (not shown), which can be connected to vacuum flanges 113, and capable of achieving a pressure within deposition chamber 112 sufficiently low for enabling the deposition system to be operable for a particular application, such as a pressure of 1x1 O’7mbar. The pressure during deposition, such as PVD processes, (i.e. deposition pressure) may be between 0.1 Pa and 1 Pa. For particular embodiments, e.g. PVD applications, wherein the processing gas includes argon and at least one of oxygen or nitrogen, the argon partial pressure may be between 0.1 Pa and 1 Pa, and the oxygen, hydrogen and / or nitrogen partial pressure may be between 0.1 Pa and 1 Pa. The pressure ranges for CVD applications can be about 2 orders of magnitude larger, particularly at the high pressure end of the ranges given above.

[0034] FIG. 2a shows an apparatus 200 for masking an edge of a substrate with a schematic cross-section of a deposition mask 201 with a first frame portion 101 and a first masking element 131. The mask frame 120, as shown in Fig. 1 , may be provided by a plurality of frame portions 101 -110 of which only one first frame portion 101 is shown in FIG. 2a. The mask frame may support the masking elements 131 and may be in a thermal contact with the masking elements. The apparatus 200 comprises an interface 202 to receive at least one temperature information. A temperature controller 203 receives the at least one temperature information and controls the temperature of one or more masking elements, in particular of the first masking element 131 based on the at least one temperature information. The apparatus 200 comprises at least one temperature adjustor 204 that is configured to adjust the temperature of the one or more masking elements, in particular of the first masking element 131 . Settings of the at least one temperature adjustor 204 are controlled by the temperature controller 203.

[0035] The at least one temperature information may be received from a processcontroller of the deposition chamber. The temperature information may comprise a process power, in particular an electric power, used to heat heating elements of the deposition chamber. The temperature information may be based upon a measurement of a deposition parameter and the deposition parameter may be related to a temperature of the one or more masking elements. In particular, the temperature may be determined using a look-up table, or using a model of the deposition process, exemplarily a digital twin, of the deposition process or the deposition chamber. Receiving the at least one temperature information may advantageously allow to use data and sensors already present in the deposition process.

[0036] The at least one temperature information may be received from a temperature sensor configured to determine a temperature of a masking element. The at least one temperature information may comprise a first temperature of the first masking element 131. In some embodiments, the at least one temperature information may comprise a first temperature of the first frame portion 101. The temperature information received by the interface 202 may be a temperature, exemplarily in Kelvin, degrees Celsius, degrees Fahrenheit, or another unit of temperature, or a temperature sensor value, exemplarily a voltage or a current, which is correlated to a temperature. In FIG. 2b, the temperature information is received from the temperature sensor 205. The temperature sensor 205 may be a contactless temperature sensor, exemplarily an infrared temperature sensor, as shown in FIG. 2b. The contactless temperature sensor advantageously allows to determine the temperature information without influencing the deposition mask. Further, a change in the deposition mask may be performed without modifications to the temperature sensor. The infrared temperature sensor may be configured to measure a thermogram of the first masking element, the plurality of masking elements or the deposition mask. The thermogram may advantageously allow to obtain a representation of the temperature distribution on the first masking element, the plurality of masking elements or the deposition mask.

[0037] The field of view of the contactless temperature sensor may comprise one masking element or a plurality of the one or more masking elements or the mask frame. The field of view of the contactless thermometer may result in averaging over a plurality of masking elements or a masking element with an adjacent mask frame portion.

[0038] The temperature sensor may be attached to a masking element or to the mask frame. In particular, the temperature element may be in a thermal contact with the masking element or the mask frame. The temperature sensor may be a resistance thermometer, a thermistor, or a thermocouple. According to some embodiments, the temperature sensor may be attached to a surface of the masking element or of the mask frame. Alternatively, the temperature sensor may be inserted into the masking element or the mask frame.

[0039] In FIG. 3, a plurality of masking elements 131 -138 with a plurality of temperature sensors 301 -308 is shown. The plurality of masking elements 131 -138 of FIG. 3 may be interchanged with the plurality of masking elements as shown in the deposition mask of FIG. 1. The plurality of masking elements 131 -138 are supported and aligned by a mask frame (not shown in FIG. 3) and are configured to form an edge exclusion mask.

[0040] In FIG. 3, the plurality of temperature sensors 301-308 are positioned at a plurality of positions of the plurality of masking elements 131 -138. In the embodiment shown in FIG. 3, eight temperature sensors are present. In embodiments, the apparatus for masking an edge of a substrate of a deposition process may comprise at least 2, at least 4, at least 6, or at least 8 temperature sensors. A plurality of temperature sensors advantageously allows to determine a plurality of temperatures at different positions of the deposition mask, in particular of the plurality of masking elements 131-138. In particular, a first temperature sensor 301 may determine a first temperature of a first masking element 131 and a second temperature sensor 302 may determine a second temperature of a second masking element 132. In some embodiments, the first temperature sensor 301 may determine the first temperature of the first masking element 131 and a second temperature sensor may determine a second temperature of a frame portion.

[0041] In FIG. 3, exemplarily, the first temperature sensor 301 determines the first temperature of the first masking element 131. The second temperature sensor 302 determines the second temperature of the second masking element 132. A third temperature sensor 303 determines a temperature of a third masking element 133. A fourth temperature sensor 304 determines a fourth temperature of a fourth maskingelement 134. A fifth temperature sensor 305 determines a fifth temperature of a fifth masking element 135. A sixth temperature sensor 306 determines a sixth temperature of a sixth masking element 136. A seventh temperature sensor 307 determines a seventh temperature of a seventh masking element 137. An eighth temperature sensor 308 determines an eighth temperature of an eighth masking element 138.

[0042] The plurality of temperature sensors may be configured, in particular positioned, to determine temperature information for a plurality of positions on the deposition mask 300, in particular on the plurality of masking elements 131 -138. The plurality of positions may comprise positions for which temperature changes, in particular during the deposition process, are different. In some embodiments, the plurality of positions may be substantially evenly distributed over the deposition mask.

[0043] The temperature controller may control the temperature of the one or more masking elements based on a combination of a temperature information received and a model of the deposition process or of the deposition chamber. In particular, the temperature controller may receive a temperature information, exemplarily the first temperature, and may use the temperature information to model the temperature distribution on the deposition mask, and in particular the temperature of the one or more masking elements 131-138. The temperature controller may employ a look-up table, or use a model of the deposition process, exemplarily a digital twin, of the deposition process or the deposition chamber to determine the temperature distribution on the deposition mask, and in particular the temperature of the one or more masking elements. In some embodiments, the temperature information may comprise the process power. Employing a model of the deposition process or the deposition chamber and a temperature information in combination may advantageously allow to more precisely control the temperature of the one or more masking elements, in particular if the temperature, or temperature changes, vary between the one or more masking elements, with a minimal or reduced amount of temperature sensors.

[0044] FIG. 4a, 4b, 5a and 5b show the apparatus 200 for masking an edge of a substrate with a schematic cross-section of the deposition mask 201 with the first frame portion 101 and the first masking element 131. In FIG. 4a and 4b the deposition mask comprises a first channel 401 and a second channel 402 through which a heat transferliquid or heat transfer gas can pass, in particular flow.

[0045] In FIG. 4a, the first frame portion 101 comprises the first channel 401 and the second channel 402. Between the first frame portion 101 and the first masking element 131 , a thermal contact may allow for controlling the temperature of the first masking element 131 by the heat transfer liquid or the heat transfer gas passing through the first channel 401 and the second channel 402. To improve the thermal contact between the first frame portion 101 and the first masking element 131 , a surface of the first frame portion 101 and / or of the first masking element 131 may be configured to increase the emissivity of the surface.

[0046] In FIG. 4b, the first masking element 131 comprises the first channel 401 and the second channel 402. Adjusting the temperature with the heat transfer liquid or the heat transfer gas directly in the first masking element 131 advantageously allows a more effective temperature adjustment. Exemplarily, the temperature may be advantageously adjusted in response to changes in the process power deposited in the deposition chamber. In particular, adjusting the temperature with the heat transfer liquid or the heat transfer gas directly in the first masking element 131 advantageously allows to reduce the number of masking elements. In some embodiments, the deposition mask may comprise the first masking element 131 as a single masking element.

[0047] In some embodiments, not shown in the figures, the first masking element 131 may comprise the first channel 401 and the first frame portion 101 may comprise the second channel 402 or vice versa.

[0048] The temperature adjustor 204 comprises the first channel 401 and the second channel 402. The temperature adjustor 204 may be configured to guide the heat transfer liquid or the heat transfer gas through the first channel 401 and the second channel 402. The temperature adjustor 204 may control the flow rate of the heat transfer liquid or the heat transfer gas passing through the first channel 401 and the second channel 402. Alternatively or additionally, the temperature adjustor 204 may control the temperature of the heat transfer liquid or the heat transfer gas passing through the first channel 401 and the second channel 402. In particular, the temperature adjustor 204 may comprise a fluid adjustor 404, e.g. a pump with acontrollable pump power or a controllable valve to control the flow rate. The temperature adjustor 204 may comprise a fluid adjustor 404, e.g. a thermostat configured to control the temperature of the heat transfer liquid or the heat transfer gas, in particular of a reservoir of the heat transfer liquid or the heat transfer gas.

[0049] In some embodiments, the first masking element 131 or the first frame portion 101 may comprise 1 , 2, 3, 4 or more channels. In particular, the first masking element 131 or the first frame portion 101 may only comprise the first channel 401.

[0050] The first channel 401 and the second channel 402 may be connected and the first channel 401 may be passed by the heat transfer liquid or the heat transfer gas prior to the second channel 402. In other words, the first channel 401 and the second channel 402 may belong to a loop path.

[0051] In some embodiments, a plurality of masking elements or frame portions may comprise at least one channel through which a heat transfer liquid or a heat transfer gas can pass. In particular, at least one channel of a first masking element or frame portion may be connected to at least one channel of a second masking element or frame portion. Exemplarily, a plurality of channels of the plurality of masking elements or frame portions may be connected, in particular with a channel connector, to form a loop around the deposition mask through which the heat transfer liquid or the heat transfer gas can pass. In another example, a plurality of channels of the plurality of masking elements or frame portions may be connected to form a loop around an edge of the deposition mask. According to some embodiments, the plurality of channels may be connected in series and, additionally or alternatively, in parallel. In particular, a parallel connection may allow to control the temperature or flow rate of the heat transfer liquid or of the heat transfer gas independently.

[0052] The temperature adjustor 204 may be configured to guide the heat transfer liquid or the heat transfer gas through a first channel of the plurality of channels at a first setting of the temperature adjustor and through a second channel of the plurality of channels at a second setting of the temperature adjustor different from the first setting of the temperature adjustor. In particular, the first setting may result in a different change in thermal energy than the second setting. Employing different settings for different channels of the plurality of channels may advantageously allow to individuallyadjust the flow rate through the different channels, in particular in view of the at least one temperature information received, to better control the temperature of the one or more masking elements.

[0053] The heat transfer liquid may comprise at least one of water, glycol or thermal oils. The heat transfer gas may comprise air, purified air or inert gases.

[0054] In FIG. 5a, the temperature adjustor 204 comprises an electric temperature changing element 501 and a power supply 504. The electric temperature changing element 501 is electrically connected to the power supply 504. The electric temperature changing element 501 may be inserted within the first masking element 131 , as shown in FIG. 5a, or may be attached to the first masking element 131 , in particular, to a surface of the first masking element 131. Alternatively, the electric temperature changing element 501 may be inserted in or attached to the first frame portion 101. Employing the electric temperature changing element 501 to adjust the temperature of the one or more masking elements advantageously allows to avoid handling a heat transfer liquid or a heat transfer gas. In particular, modifications of the deposition mask, in particular, of the masking elements, may require less effort for electric connections than for liquid- or gas-tight connections. Advantageously, scaling of the temperature adjustor 204 may be easier for an electric temperature changing element 501 with a power supply 504.

[0055] The electric temperature changing element 501 may comprise a Peltier element. The power supply 504 may provide an electric current to the Peltier element. In particular, the power supply 504 may adjust an amplitude and a direction of the electric current passing through the Peltier element. A Peltier element may advantageously allow to both cool and heat the temperature of the first masking element 131.

[0056] Alternatively or additionally, the electric temperature changing element 501 may comprise a resistance heater. The power supply 504 may provide an electric current to the resistance heater. In particular, the power supply 504 may define an amplitude of the electric current passing through the resistance heater.

[0057] The apparatus may comprise a plurality of electric temperature changingelements 501. In particular, the apparatus may comprise at least one electric temperature changing element 501 for each masking element or for each frame portion. The plurality of electric temperature changing elements 501 may be connected in series or in parallel or in a complex electric circuit. Employing electric temperature changing element 501 to adjust the temperature of the one or more masking elements may advantageously allow to individually control the temperature adjustment of individual masking elements. In particular, a more precise control of the temperature of the masking elements may be possible.

[0058] In FIG. 5b, the temperature adjustor 204 comprises an inductor 502, particularly an inductive coil, configured to inductively heat the first masking element 131 , and a power supply 504. In some embodiments, the inductor 502 is configured to inductively heat the first frame portion 101. The inductor 502 is electrically connected to the power supply 504. The power supply 504 may provide an electric alternating current to the inductor 502. In particular, the power supply 504 may control at least one of a frequency or an amplitude of the electric alternating current. The apparatus may comprise a plurality of inductors 502. The current flowing through the plurality of inductors 502 may be controlled individually for each of the plurality of inductors 502. Employing the inductor 502 to adjust the temperature of the one or more masking elements may advantageously avoid any modifications to the one or more masking elements and / or to the mask frame. The deposition mask may be modified without modifications to the temperature adjustor 204.

[0059] In FIG. 6, a method 600 of masking an edge of a substrate of a deposition process with a deposition mask comprising the mask frame and the one or more masking elements configured to form the edge exclusion mask is shown. The method 600 comprises receiving 610 at least one temperature information. The at least one temperature information may, in particular electronically, be received by the temperature controller. The method may comprise determining the at least one temperature information with a temperature sensor.

[0060] The method 600 further comprises controlling 620 the temperature of the one or more masking elements based on the at least one temperature information received. Controlling 620 comprises adjusting 630 a setting of the at least onetemperature adjustor. In particular for a plurality of temperature adjustors, controlling 620 may comprise adjusting 630 a first setting of a first temperature adjustor and a second setting of a second temperature adjustor. Adjusting 630 the setting of the at least one temperature adjustor may in particular comprise adjusting a current or a flow rate. The method 600 may be performed cyclically.

[0061] Controlling 620 the temperature of the one or more masking elements may comprise adjusting 630 the setting of at least one temperature adjustor such that the temperature of the one or more masking elements increases or decreases. In particular, the settings may be adjusted 630 according to the deposition process. In other words, the settings may be adjusted if the temperature of the one or more masking elements increases due to the deposition process, the settings may be adjusted 630 to increase a cooling of the one or more masking elements.

[0062] In some embodiments, controlling 620 the temperature of the one or more masking elements comprises adjusting 630 the setting of at least one temperature adjustor such that the temperature of the one or more masking elements remains within a, particularly predefined, temperature range. Exemplarily, when the at least one temperature information indicates that the temperature of the at least one masking elements is below or close to a lower threshold, controlling 620 may comprise adjusting 630 the settings such that the one or more masking elements are heated. When the at least one temperature information indicates that the temperature of the at least one masking element is above or close to an upper threshold, controlling 620 may comprise adjusting 630 the settings such that the one or more masking elements are cooled. In some embodiments, the temperature range may consist of substantially one temperature.

[0063] The temperature range may comprise a temperature of the one or more masking elements in an idle state, a maximum temperature of the one or more masking elements during the deposition process or an intermediate temperature. A higher temperature range may advantageously simplify adjusting the temperature of the one or more masking elements. A lower temperature range may result in a better quality of the layer deposed.

[0064] Controlling 620 the temperature of the one or more masking elements maycomprise adjusting 630 the setting of at least one temperature adjustor such that a rate of change of the temperature of the one or more masking elements remains within a, particularly predefined, temperature range. Keeping the temperature of the one or more masking elements within a temperature range may advantageously allow to reduce the number of particles peeling off the one or more masking elements, that may lead to particle defects on the substrate, due to temperature changes. In particular, at a substantially constant temperature, no thermal strain and / or stress due to temperature changes occurs.

[0065] Controlling 620 the temperature of the one or more masking elements may comprise adjusting 630 the setting of at least one temperature adjustor following a predefined relation between the value of the temperature information and the setting of the at least one temperature adjustor. Exemplarily, with the temperature information being the process power of the deposition process, the setting of the temperature adjustor, particularly a current or a flow rate, may follow a predefined relation, or function, depending on the process power. In some embodiments, the temperature may only be adjusted when the deposition process is in an idle state or may only be adjusted when the deposition process involves heating of the deposition chamber.

[0066] Specifically, the following embodiments are described herein:

[0067] Embodiment 1 : An apparatus for masking an edge of a substrate during a deposition process, comprising a deposition mask with a mask frame and one or more masking elements configured to form an edge exclusion mask; n interface to receive at least one temperature information; at least one temperature adjustor configured to adjust a temperature of the one or more masking elements; a temperature controller for controlling the at least one temperature adjustor to adjust the temperature of the one or more masking elements based on the at least one temperature information.

[0068] Embodiment 2: The apparatus of embodiment 1 , further comprising a first temperature sensor configured to determine a first temperature of a first masking element of the one or more masking elements.

[0069] Embodiment 3: The apparatus of embodiment 2, further comprising at least one second temperature sensor configured to determine a second temperature of thedeposition mask; wherein the second temperature is indicative of a temperature of a second masking element of the one or more masking elements.

[0070] Embodiment 4: The apparatus of any of embodiments 2 to 3, wherein the first temperature sensor is an infrared temperature sensor.

[0071] Embodiment 5: The apparatus of any of embodiments 2 to 3, wherein the first temperature sensor is attached to the first masking element

[0072] Embodiment 6: The apparatus of embodiment 1 , wherein the temperature information is received from a process controller of a deposition chamber and wherein the temperature information comprises a process power

[0073] Embodiment 7: The apparatus of any of embodiments 1 to 6, wherein the temperature adjustor is configured to inductively heat at least one of the one or more masking elements.

[0074] Embodiment 8: The apparatus of any of embodiments 1 to 7, wherein the temperature adjustor comprises at least one Peltier element configured to be attached to or be inserted into at least one of the one or more masking elements.

[0075] Embodiment 9: The apparatus of any of embodiments 1 to 8, wherein the deposition mask comprises at least one channel through which a heat transfer liquid, particularly water, or a heat transfer gas can pass.

[0076] Embodiment 10: The apparatus of embodiment 9, wherein at least one of the one or more masking elements comprises one of the at least one channel.

[0077] Embodiment 11 : The apparatus of any of embodiments 9 to 10, wherein the temperature adjustor is configured to guide the heat transfer liquid or the heat transfer gas through the at least one channel.

[0078] Embodiment 12: The apparatus of any of embodiments 9 to 11 , wherein the deposition mask comprises a plurality of channels and wherein the temperature adjustor is configured to guide the heat transfer liquid or the heat transfer gas through a first channel of the plurality of channels at a first setting of the temperature adjustor and through a second channel of the plurality of channels at a second setting of thetemperature adjustor different from the first setting of the temperature adjustor.

[0079] Embodiment 13: A vapor deposition chamber comprising the apparatus for masking an edge of a substrate of a deposition process according to any one of the preceding embodiments.

[0080] Embodiment 14: A method of masking an edge of a substrate of a deposition process with a deposition mask comprising a mask frame and one or more masking elements configured to form an edge exclusion mask, the method comprising receiving at least one temperature information; controlling a temperature of the one or more masking elements based on the at least one temperature information by controlling at least one temperature adjustor.

[0081] Embodiment 15: The method of embodiment 14, further comprising determining the at least one temperature information with a temperature sensor.

[0082] Embodiment 16: The method of any of embodiments 14 to 15, wherein the at least one temperature information comprises a first temperature of a first masking element of the one or more masking elements, particularly wherein the at least one temperature information comprises a second temperature of a second masking element of the one or more masking elements.

[0083] Embodiment 17: The method of any of embodiments 14 to 16, wherein receiving the at least one temperature information comprises receiving the temperature information from a process controller of a deposition chamber; and wherein the temperature information comprises a process power.

[0084] Embodiment 18: The method of any of embodiments 14 to 17, wherein the controlling the at least one temperature adjustor comprises adjusting an electric current of a Peltier element.

[0085] Embodiment 19: The method of any of embodiments 14 to 17, wherein the controlling the at least one temperature adjustor comprises adjusting an electric current through an inductor configured to induce a heating current in at least one of the one or more masking elements.

[0086] Embodiment 20: The method of embodiment 14, wherein the controlling at least one temperature adjustor comprises adjusting at least one of a flow rate or a temperature of a heat transfer liquid or a heat transfer gas flowing through a channel of the deposition mask.

[0087] Thus, in view of the embodiments described herein, improved apparatus and methods for masking an edge of a substrate of a deposition process are provided, particularly for the deposition of layers in a PVD or CVD process. The embodiments described herein provide an improved quality by reducing the number of particle defects on the substrate and increase the uptime of the deposition process, in particular by reducing the number of particles peeling off the surface of the deposition mask. The embodiments described herein allow to control a change of the temperature of the one or more masking elements and / or to control the level of the temperature of the one or more masking elements. In particular for brittle sputter materials, reducing temperature changes of the mask reduces thermal stress, avoids particles peeling off and falling on the substrate. An improved temperature control may also advantageously prolong the lifetime of the mask and reduce periodic maintenance leading to an improved uptime. In the embodiments described herein the temperature of the one or more masking elements themselves is advantageously controlled, providing a more precise and direct control of the temperature of the one or more masking elements.

[0088] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

[0089] In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims, if the claims have structural elements that do not differfrom the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

WHAT IS CLAIMED IS:1 . An apparatus for masking an edge of a substrate during a deposition process, comprising a deposition mask with a mask frame and one or more masking elements configured to form an edge exclusion mask; an interface to receive at least one temperature information; at least one temperature adjustor configured to adjust a temperature of the one or more masking elements; and a temperature controller for controlling the at least one temperature adjustor to adjust the temperature of the one or more masking elements based on the at least one temperature information.

2. The apparatus of claim 1 , further comprising a first temperature sensor configured to determine a first temperature of a first masking element of the one or more masking elements.

3. The apparatus of claim 2, further comprising: at least one second temperature sensor configured to determine a second temperature of the deposition mask; wherein the second temperature is indicative of a temperature of a second masking element of the one or more masking elements.

4. The apparatus of any of claims 2 to 3, wherein the first temperature sensor is an infrared temperature sensor.

5. The apparatus of any of claims 2 to 3, wherein the first temperature sensor is attached to the first masking element.

6. The apparatus of claim 1 , wherein the temperature information is received from a process controller of a deposition chamber and wherein the temperature information comprises a process power.

7. The apparatus of any of claims 1 to 6, wherein the temperature adjustor is configured to inductively heat at least one of the one or more masking elements.

8. The apparatus of any of claims 1 to 7, wherein the temperature adjustor comprises at least one Peltier element configured to be attached to or be inserted into at least one of the one or more masking elements.

9. The apparatus of any of claims 1 to 8, wherein the deposition mask comprises at least one channel through which a heat transfer liquid, particularly water, or a heat transfer gas can pass.

10. The apparatus of claim 9, wherein at least one of the one or more masking elements comprises one of the at least one channel.

11. The apparatus of any of claims 9 to 10, wherein the temperature adjustor is configured to guide the heat transfer liquid or the heat transfer gas through the at least one channel.

12. The apparatus of any of claims 9 to 11 , wherein the deposition mask comprises a plurality of channels and wherein the temperature adjustor is configured to guide the heat transfer liquid or the heat transfer gas through a first channel of the plurality of channels at a first setting of the temperature adjustor and through a second channel of the plurality of channels at a second setting of the temperature adjustor different from the first setting of the temperature adjustor.

13. A vapor deposition chamber comprising the apparatus for masking an edge of a substrate of a deposition process according to any one of the preceding claims.

14. A method of masking an edge of a substrate during a deposition process with a deposition mask comprising a mask frame and one or more masking elements configured to form an edge exclusion mask, the method comprising receiving at least one temperature information; and controlling a temperature of the one or more masking elements based on the at least one temperature information by controlling at least one temperature adjustor.

15. The method of claim 14, further comprising determining the at least one temperature information with a temperature sensor.

16. The method of any of claims 14 to 15, wherein the at least one temperature information comprises a first temperature of a first masking element of the one or more masking elements, particularly wherein the at least one temperature information comprises a second temperature of a second masking element of the one or more masking elements.

17. The method of any of claims 14 to 16, wherein receiving the at least one temperature information comprises receiving the temperature information from a process controller of a deposition chamber; and wherein the temperature information comprises a process power.

18. The method of any of claims 14 to 17, wherein the controlling the at least one temperature adjustor comprises adjusting an electric current of a Peltier element.

19. The method of any of claims 14 to 17, wherein the controlling the at least one temperature adjustor comprises adjusting an electric current through an inductor configured to induce a heating current in at least one of the one or more masking elements.

20. The method of claim 14, wherein the controlling at least one temperature adjustor comprises adjusting at least one of a flow rate or a temperature of a heat transfer liquid or a heat transfer gas flowing through a channel of the deposition mask.

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