Measurement device, measurement method, and device to be tested

Abstract

Provided is a measurement device comprising: a quantum sensor that is disposed near a device to be tested; an emission unit that emits microwaves at the quantum sensor; an irradiation unit that irradiates the quantum sensor with excited light; a measurement unit that measures the light intensity of the fluorescence emitted from the quantum sensor irradiated with the microwaves and the excited light, or the signal intensity of the electrical signal outputted from the quantum sensor irradiated with the microwaves and the excited light; and a specification unit that specifies the temperature or the magnetic field of the device to be tested, on the basis of the light intensity or the signal intensity.

Description

Measurement apparatus, measurement method, and device under test

[0001] The present invention relates to a measurement apparatus, a measurement method, and a device under test.

[0002] Patent Document 1 states the following (abstract): "A magnetic field detector such as a SQUID detects the strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip."Patent Document 2 states, ``The DUT 101 emits the EM radiation 201 from a certain location, eg an antenna on the DUT 101. For example, the EM radiation 201 has a frequency of 50 MHz. At a certain location in the medium 103, the resonance frequency of the medium 103 can match the frequency of the EM radiation. luminesce, of the medium 103, which can be detected by the image detector 107. In particular, the processor is configured to analyze the acquired image and to determine the frequency of the EM radiation based on the location and / or a shape of features in the intensity profile depicted in the image. (Machine translation: DUT 101 emits EM radiation 201 from a particular location, for example, location. For example, the electromagnetic radiation 201 has a frequency of 50 MHz. At a particular position within medium 103, the resonant frequency of medium 103 may match the frequency of the EM radiation. At said position, EM radiation 201 changes the optical parameters of medium 103, in particular its light emission, which can be detected by image detector 107. In particular, the processor is configured to analyze the acquired image and determine the frequency of the EM radiation based on the position and / or shape of features in the intensity profile depicted in the image.)" (0083).Patent Document 3 states, "The insulation defect detection apparatus comprises a quantum sensor arranged near a current transformer, a laser generator for emitting a laser to the quantum sensor to excite the quantum sensor, a microwave transceiver for transmitting a microwave signal to the quantum sensor and receiving a microwave signal fed back by the quantum sensor..." (English translation of abstract). [Prior art documents] [Patent documents] [Patent document 1] US2002106820A1 [Patent document 2] US2021349142A1 [Patent document 3] CN107807342A. General disclosure

[0003] A first aspect of the present invention provides a measurement apparatus comprising: a quantum sensor arranged in proximity to a device under test, an emission unit that emits microwaves to the quantum sensor, an irradiation unit that irradiates excitation light to the quantum sensor, a measurement unit that measures the light intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the signal intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied, and an identification unit that identifies the temperature or magnetic field of the device under test based on the light intensity or the signal intensity.

[0004] In the above measurement device, the quantum sensor may include a diamond quantum sensor or a SiC quantum sensor.

[0005] Any of the above measurement devices may further include a plate-shaped transparent member that transmits the excitation light and the fluorescence. Any of the above measurement devices may further include a refrigerant flow path formed through the transparent member through which a refrigerant for cooling the device under test flows, and a pusher that moves the transparent member toward the device under test and brings the transparent member into contact with the device under test.

[0006] In any of the above measurement apparatuses, the quantum sensor may be provided on a main surface of the transparent member that abuts against the device under test.

[0007] In any of the above measurement apparatuses, the quantum sensor may be provided on a main surface of the transparent member that does not contact the device under test.

[0008] In any of the above measurement devices, the quantum sensor may be embedded in either a plate or a sheet attached to the main surface of the transparent member.

[0009] In any of the above measurement devices, the quantum sensor may be embedded in the transparent member.

[0010] In any of the above measurement devices, the irradiation unit may irradiate the excitation light onto the quantum sensor via the pusher and the transparent member. In any of the above measurement devices, the measurement unit may receive, via the pusher and the transparent member, fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied.

[0011] In any of the above measurement devices, the identification unit may identify the temperature or magnetic field of the device under test based on the frequency characteristics of the light intensity of the quantum sensor, which change depending on the ambient temperature or magnetic field.

[0012] In any of the above measurement devices, the radiating unit may radiate the microwaves at different frequencies. In any of the above measurement devices, the identifying unit may identify a temperature or a magnetic field of the device under test based on the different light intensities measured by the measuring unit for the microwaves at the different frequencies.

[0013] In any of the above measurement devices, the identification unit may identify a resonant frequency of the quantum sensor that changes depending on the ambient temperature or magnetic field, and identify the temperature or magnetic field of the device under test based on the identified resonant frequency.

[0014] A second aspect of the present invention provides a measurement apparatus comprising: an emission unit that emits microwaves to a quantum sensor provided in a device under test; an irradiation unit that irradiates the quantum sensor with excitation light; a measurement unit that measures the light intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the signal intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied; and an identification unit that identifies the temperature or magnetic field of the device under test based on the light intensity or the signal intensity.

[0015] A third aspect of the present invention provides a measurement method, comprising: emitting microwaves to a quantum sensor disposed adjacent to a device under test or provided in the device under test; irradiating the quantum sensor with excitation light; measuring the intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied; and identifying a temperature or a magnetic field of the device under test based on the light intensity or the signal intensity.

[0016] A fourth aspect of the present invention provides a device under test, the device under test comprising one or more dies, a package in which the one or more dies are sealed with resin, and a quantum sensor provided in the package.

[0017] The device under test may further include an interposer electrically connected to the one or more dies. In any of the devices under test described above, the quantum sensor may be provided on the opposite side of the package from the interposer.

[0018] In any of the above devices under test, the quantum sensor may be embedded in the package.

[0019] In any of the above devices under test, the quantum sensor may be provided on a main surface of the package.

[0020] In any of the above devices under test, the quantum sensor may be embedded in either a plate or a sheet attached to the main surface of the package.

[0021] The above summary of the invention does not list all of the features of the present invention, and subcombinations of these features may also be inventions.

[0022] 1 is a schematic oblique perspective view of a measurement device 100 according to a first embodiment, which measures the light intensity of fluorescence emitted from a quantum sensor 110 arranged close to a device under test 10. FIG. 2 is a schematic cross-sectional view showing a state before a pusher 160 and the like of the measurement device 100 according to the first embodiment come into contact with the device under test 10. FIG. 3 is a schematic cross-sectional view showing a state in which a pusher 160 and the like of the measurement device 100 according to the first embodiment come into contact with the device under test 10. FIG. 4 is a graph for explaining the frequency characteristics of the fluorescence light intensity of a diamond quantum sensor, which change depending on the ambient temperature. FIG. 5 is a graph for explaining the frequency characteristics of the fluorescence light intensity of a diamond quantum sensor, which change depending on the ambient magnetic field. FIG. 6 shows an example of the temperature distribution of the device under test 10, visualized by the measurement device 100 according to the first embodiment. FIG. 7 is a schematic cross-sectional view showing a state in which the measurement device 100 according to the first embodiment has changed the attachment surface of the sheet 111 and brought the pusher 160 and the like into contact with the device under test 10. 1 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 200 according to the second embodiment are in contact with the device under test 10. FIG. 2 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 300 according to the third embodiment are in contact with the device under test 20. FIG. 3 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 300 according to the third embodiment are in contact with the device under test 30.

[0023] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention as claimed. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0024] 1 is a schematic oblique perspective view of a measurement apparatus 100 according to a first embodiment, which measures the light intensity of fluorescence emitted from a quantum sensor 110 disposed adjacent to a device under test 10. FIG. 1 shows an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other. The X-axis extends in the depth direction into the paper, the Y-axis extends in the left-right direction into the paper, and the Z-axis extends in the up-down direction into the paper. The corresponding X-, Y-, and Z-axes are also shown in subsequent figures, and redundant explanations will be omitted.

[0025] The measurement device 100 according to the first embodiment includes a quantum sensor 110, an emitter 120, an irradiator 130, a light-receiving unit 140, and an identifier 150. The measurement device 100 may further include a pusher 160, a transparent member 170, a housing 180, and a performance board 190. Fig. 1 shows the light-receiving unit 140, the pusher 160, and the transparent member 170 in a see-through manner.

[0026] The device under test 10, which is the object of measurement by the measuring apparatus 100, is a semiconductor device, and may be, for example, an image sensor, a CMOS sensor, a CCD sensor, etc. The device under test 10 is, for example, produced by dicing a wafer into individual pieces, which are then sealed with resin and packaged.

[0027] The measurement apparatus 100 according to the first embodiment determines the temperature or magnetic field of the device under test 10 by measuring the intensity of fluorescent light emitted from quantum sensors 110 arranged in proximity to the device under test 10 while the device under test 10 is in operation. As illustrated in FIG. 1 , a large number of quantum sensors 110 in the measurement apparatus 100 are arranged in proximity to the device under test 10, thereby enabling the measurement apparatus 100 to visualize minute temperature or magnetic field distributions in the device under test 10. The principal surface of the device under test 10 parallel to the XY plane may be a rectangle with sides measuring, for example, approximately 10 to 30 mm, and a large number of quantum sensors 110 may be scattered on the positive side of the Z axis of the rectangle. While the drawings in this application show several quantum sensors 110 aligned on the positive side of the Z axis of the device under test 10 for clarity of explanation, any number of quantum sensors 110 may also be arranged randomly.

[0028] The quantum sensor 110 includes a diamond quantum sensor or a SiC (silicon carbide) quantum sensor. The quantum sensor 110 of this embodiment is, for example, a diamond quantum sensor.

[0029] The diamond quantum sensor creates pairs of nitrogen and vacancies called NV centers in diamond and utilizes the quantum spin within them as a sensor. By placing the diamond quantum sensor near a measurement object that emits heat or magnetism and utilizing the frequency characteristics of the diamond quantum sensor, it is possible to measure the temperature and magnetic field emitted from the measurement object. The frequency characteristics of the diamond quantum sensor are such that, when excitation light, specifically green visible light, and microwaves are applied to excite the NV center, causing it to emit fluorescence in the red region, and the microwave frequency is changed by sweeping or the like, resonance occurs at a certain frequency, for example, 2.8 GHz, and the intensity of the fluorescence emitted from the NV center attenuates. SiC quantum sensors also have similar frequency characteristics, and when the measurement device 100 uses a SiC quantum sensor instead of a diamond quantum sensor, the wavelength band of the excitation light and the microwave frequency applied to the quantum sensor 110 can be made different from those of the diamond quantum sensor.

[0030] The emitter 120 emits microwaves to the quantum sensor 110. As an example, the emitter 120 passes a high-frequency current through one or more lines 121 wired on the positive side of the Z-axis of the quantum sensor 110, causing the lines 121 to function as antennas, generating microwaves from the lines 121 and irradiating the microwaves to the quantum sensor 110. The emitter 120 can vary the frequency of the microwaves it emits by sweeping, etc., i.e., it can emit microwaves of different frequencies. The emitter 120 emits at least microwaves of the above-mentioned resonant frequency and microwaves of other frequencies around the resonant frequency.

[0031] In the illustrated example, microwaves are radiated from two lines 121 extending in the Y-axis direction to a large number of quantum sensors 110 scattered two-dimensionally on the negative side of the Z-axis of the two lines 121. In this case, some quantum sensors 110 may be strongly hit by the microwaves and others may be weakly hit by them. That is, a microwave intensity distribution may occur within the two-dimensional plane onto which the microwaves are radiated from the radiating unit 120. The measuring apparatus 100 may correct the measurement results by calibration to prevent the intensity distribution from affecting the measurement results of the device under test 10, such as the temperature, or the like. The intensity distribution may be suppressed by increasing the number and density of lines 121 arranged on the positive side of the Z-axis of the device under test 10.

[0032] The irradiation unit 130 irradiates the quantum sensor 110 with excitation light. As described above, in this embodiment, the irradiation unit 130 irradiates the quantum sensor 110 with laser light, which is visible light in the green band, as excitation light. The irradiation unit 130 in this embodiment irradiates the quantum sensor 110 with excitation light via the pusher 160 and the transparent member 170. In FIG. 1 and the subsequent figures, the main rays of the excitation light and their traveling directions are indicated by arrows.

[0033] The irradiation unit 130 may include a reflecting member 131 and a lens system 133. The reflecting member 131 is a semi-transparent optical member designed to reflect excitation light, for example, light in the green wavelength band, and transmit fluorescent light, for example, light in the red wavelength band. The reflecting member 131 may be, for example, a dichroic prism or a dichroic mirror. The reflecting member 131 is positioned and fixed in space so as to reflect the laser light from the irradiation unit 130 toward the lens system 133.

[0034] The lens system 133 may be composed of one or more lenses. The lens system 133 is designed so that the green laser light passing through the lens system 133 irradiates the entire two-dimensional area in which the quantum sensors 110 are scattered. The lens system 133 diffuses the laser light incident on the lens system 133 from the positive side of the Z axis and focuses the fluorescent light incident on the lens system 133 from the negative side of the Z axis. The lens system 133 is inserted and fixed in a through-hole that penetrates the pusher 160 in the Z axis direction. As will be described in detail later, the lens system 133 may be positioned in the Z axis direction so that no air layer is interposed between the lens system 133 and the refrigerant flowing through the refrigerant flow path formed in the pusher 160.

[0035] The light receiving unit 140 measures the light intensity of the fluorescence emitted from the quantum sensor 110 to which microwaves and excitation light have been applied as described above. The light receiving unit 140 is a spectrometer, such as a 2D spectrophotometer or a camera. The light receiving unit 140 is positioned and fixed in space so as to receive the fluorescence. The light receiving unit 140 of this embodiment receives the fluorescence emitted from the quantum sensor 110 to which microwaves and excitation light have been applied via the pusher 160 and the transparent member 170. In FIG. 1 and subsequent figures, the main light ray of the fluorescence and its traveling direction are indicated by arrows. The light receiving unit 140 is an example of a measurement unit.

[0036] The identifying unit 150 identifies the temperature or magnetic field of the device under test 10 based on the light intensity measured by the light-receiving unit 140. The identifying unit 150 may be, for example, a PC, and is connected to the light-receiving unit 140 by wire to receive data indicating the light intensity from the light-receiving unit 140. The identifying unit 150 may also be connected to the light-receiving unit 140 wirelessly.

[0037] The pusher 160 has a refrigerant flow path formed therein through which a refrigerant for cooling the device under test 10 flows via the transparent member 170. The pusher 160 moves the transparent member 170 toward the device under test 10 and brings the transparent member 170 into contact with the device under test 10.

[0038] More specifically, the pusher 160 is a structure that is raised and lowered in the Z-axis direction by a drive mechanism (not shown) together with the lens system 133 and transparent member 170 fixed to the pusher 160, and is pressed against or pulled away from the device under test 10. The above-mentioned light receiving unit 140 and reflecting member 131 may also be fixed to the pusher 160, that is, all of these may be raised and lowered in the Z-axis direction as a unit. The pusher 160 may also be referred to as a lid, a socket, or the like.

[0039] A coolant flow path is formed in the pusher 160. More specifically, the coolant flow path is a hollow portion that is surrounded by the pusher 160 and the transparent member 170 and extends in the X-axis direction. As shown by the arrows in FIG. 1 , a gas or liquid flows in the coolant flow path as a coolant for cooling the device under test 10. For example, water may flow in the coolant flow path. The periphery of the coolant flow path is sealed by a shield structure to prevent the coolant from leaking to the outside. The coolant flow path is configured to circulate the coolant, including areas not shown.

[0040] The transparent member 170 is, for example, a glass plate-shaped optical member that transmits the excitation light and fluorescent light described above.

[0041] The accommodation section 180 is a frame that accommodates the device under test 10 on its main surface on the positive side of the Z axis. The performance board 190 has the accommodation section 180 placed on its main surface on the positive side of the Z axis. The performance board 190 is electrically connected to the device under test 10 accommodated in the accommodation section 180, and supplies power to the device under test 10 to put the device under test 10 into an operating state.

[0042] Fig. 2 is a schematic cross-sectional view showing a state before the pusher 160 and other components of the measuring apparatus 100 according to the first embodiment come into contact with the device under test 10. Fig. 3 is a schematic cross-sectional view showing a state after the pusher 160 and other components of the measuring apparatus 100 according to the first embodiment have come into contact with the device under test 10. In Fig. 2, the directions in which the pusher 160 and other components move up and down are indicated by hollow arrows. Note that in the cross-sectional views from Fig. 2 onwards, only a portion of the configuration is shown hatched simply to clarify the explanation.

[0043] 2 and 3, in the measurement apparatus 100 of this embodiment, the quantum sensor 110 is provided on the main surface of the transparent member 170 that contacts the device under test 10. More specifically, the quantum sensor 110 is embedded in a sheet 111 that is attached to the main surface of the transparent member 170. Note that the quantum sensor 110 may be embedded in a thin plate made of glass or the like instead of the sheet 111. This plate may also be referred to as a film plate.

[0044] 2 and 3 , the device under test 10 of this embodiment includes one or more dies 11, a package 13 in which the one or more dies 11 are sealed with resin, and an interposer 15 electrically connected to the one or more dies 11. The device under test 10 may have a multi-package structure including multiple dies 11, or a single-package structure including one die 11.

[0045] 2 , the measuring apparatus 100 according to this embodiment accommodates the device under test 10 in the accommodation section 180 with the pusher 160 and the like separated in the Z-axis direction from the accommodation section 180 and the performance board 190. The device under test 10 accommodated in the accommodation section 180 is electrically connected to the performance board 190.

[0046] 3 , the measurement apparatus 100 according to this embodiment moves the pusher 160 and the like in the Z-axis direction toward the device under test 10, and brings the transparent member 170 into contact with the device under test 10. In this state, the positional relationship in the Z-axis direction among the light receiving unit 140, the lens system 133, and the quantum sensor 110 is designed in advance so that the image light from the quantum sensor 110 is formed on the light receiving surface of the light receiving unit 140.

[0047] The measuring device 100 according to this embodiment starts circulating the coolant through the coolant flow path of the pusher 160 and starts supplying power from the performance board 190 to the device under test 10, putting the device under test 10 into an operating state. In the device under test 10 that is now in an operating state, each of the multiple dies 11 generates heat, generating magnetism and forming a magnetic field around it. The measuring device 100 cools the heated device under test 10 with the coolant circulating through the coolant flow path.

[0048] 3, the measuring apparatus 100 radiates microwaves to the quantum sensor 110 placed close to the device under test 10, and irradiates excitation light onto the quantum sensor 110. The measuring apparatus 100 measures the intensity of the fluorescence emitted from the quantum sensor 110 to which the microwaves and excitation light have been applied, and identifies the temperature or magnetic field of the device under test 10 based on the measured light intensity.

[0049] With the transparent member 170 in contact with the device under test 10, the measuring apparatus 100 cools the device under test 10 by flowing a refrigerant with controlled temperature and flow rate through the refrigerant flow path, and identifies locations of high temperature and strong magnetic field in the device under test 10. The temperature of the device under test 10 measured by the measuring apparatus 100 using the quantum sensor 110 may be up to approximately 150°C.

[0050] The temperature distribution in the device under test 10 becomes uniform as time passes after the multiple dies 11 start operating, and the temperature stops rising and stabilizes. When the temperature distribution becomes uniform, it can be difficult to identify the die 11 in the device under test 10 that is relatively hot. Therefore, the measuring apparatus 100 determines the temperature and magnetic field of the device under test 10 before the temperature of the device under test 10 stabilizes, i.e., during the temperature rise transition period, while suppressing the temperature rise of the device under test 10. The measuring apparatus 100 may apply microwaves and excitation light to the device under test 10 and start measuring the fluorescence light intensity when a predetermined time has elapsed since starting power supply to the device under test 10. The measuring apparatus 100 may vary the predetermined time by adjusting the flow rate of the coolant flowing through the coolant flow path.

[0051] Here, as mentioned above, the frequency characteristic of the diamond quantum sensor is the characteristic that the intensity of the fluorescence emitted from the NV center attenuates when the frequency of the microwave applied is changed to the resonance frequency in a state where the NV center is excited by applying green visible light and microwave to the diamond quantum sensor to emit fluorescence in the red region. The resonance frequency of the diamond quantum sensor changes depending on the temperature and magnetic field around the diamond quantum sensor.

[0052] Figure 4 is a graph illustrating the frequency characteristics of the fluorescence light intensity of a diamond quantum sensor, which changes depending on the ambient temperature. As an example, Figure 4 shows four graphs in which the resonant frequency varies depending on the ambient temperature of the diamond quantum sensor. The horizontal axis of the graph indicates frequency [GHz]. On the left side of the graph, the vertical axis of the graph indicates the emission intensity in units of a.u. The emission intensity corresponds to the fluorescence light intensity measured by the light receiving unit 140. On the right side of the graph, the ambient temperature of the diamond quantum sensor is shown, with the ambient temperature changing from room temperature to high temperature from the top to the bottom.

[0053] As shown in the top graph of Figure 4, the resonant frequency of the diamond quantum sensor in a room temperature environment is around 2.87 GHz, where the emission intensity dips. In contrast, referring to the three graphs below the top graph, it can be seen that the resonant frequency gradually decreases as the ambient temperature increases.

[0054] Figure 5 is a graph for explaining the frequency characteristics of the fluorescence light intensity of the diamond quantum sensor, which changes depending on the surrounding magnetic field. As an example, Figure 5 shows four graphs in which the resonance frequency varies depending on the magnetic field around the diamond quantum sensor. The horizontal axis of the graph indicates frequency [GHz]. On the left side of the graph, the vertical axis of the graph indicates the emission intensity in a unitless unit (a.u.). The emission intensity corresponds to the fluorescence light intensity measured by the light receiving unit 140. On the right side of the graph, the magnetic field around the diamond quantum sensor is shown, with the surrounding magnetic field changing from 0 to increasing from top to bottom.

[0055] As shown in the top graph of Figure 5, the resonant frequency of the diamond quantum sensor in an environment without a magnetic field is around 2.87 GHz, where the emission intensity dips. In contrast, referring to the three graphs below the top graph, it can be seen that when a magnetic field is generated around it, the resonant frequency splits into two, and as the ambient magnetic field increases, the distance between the two dips representing the resonant frequency gradually increases.

[0056] While the device under test 10 is in operation, the measuring apparatus 100 measures the light intensity of fluorescence emitted from a quantum sensor 110 disposed close to the device under test 10 and identifies the temperature or magnetic field of the device under test 10 by utilizing the frequency characteristics of the quantum sensor 110. More specifically, the emitting unit 120 emits microwaves of different frequencies to utilize the frequency characteristics of the quantum sensor 110. The emitting unit 120 emits microwaves while sweeping the frequency, for example, every few milliseconds. As shown in FIGS. 4 and 5 , the identifying unit 150 identifies the temperature or magnetic field of the device under test 10 based on the frequency characteristics of the light intensity of the quantum sensor 110, which change depending on the ambient temperature or magnetic field.

[0057] Specifically, the identifying unit 150 identifies the temperature or magnetic field of the device under test 10 based on the different light intensities measured by the light receiving unit 140 for microwaves of different frequencies emitted by the emitting unit 120. More specifically, the identifying unit 150 identifies the resonant frequency of the quantum sensor 110, which changes depending on the ambient temperature or magnetic field, and identifies the temperature or magnetic field of the device under test 10 based on the identified resonant frequency. In order to perform this process, the identifying unit 150 pre-stores the frequency characteristics of the quantum sensor 110, i.e., the relationship between temperature and resonant frequency and the relationship between magnetic field and resonant frequency, as exemplified in FIGS. 4 and 5 . Note that the identifying unit 150 may also pre-store the relationships between temperature, magnetic field, and resonant frequency.

[0058] As an example, the identifying unit 150 may pre-store the resonant frequency in a room temperature environment as a reference frequency, and determine the temperature of the device under test 10 by calculating the measurement result of the light intensity input from the light receiving unit 140, i.e., the deviation of the measured resonant frequency from the reference frequency. In other words, the identifying unit 150 may determine the temperature of the device under test 10 by calculating the deviation of the measured resonant frequency from the reference frequency. FIG. 6 shows an example of the temperature distribution of the device under test 10 visualized by the measurement apparatus 100 according to the first embodiment. In FIG. 6, the temperature corresponding to the light intensity measured by the multiple quantum sensors 110 arranged adjacent to the positive side of the Z-axis of the device under test 10 shown in FIG. 1 is indicated by shades of gray, with darker colors representing higher temperatures. Note that, as described in FIG. 1, any number of quantum sensors 110 may be randomly scattered on the positive side of the Z-axis of the device under test 10, thereby visualizing a more detailed temperature distribution of the device under test 10.

[0059] As an example, the identifying unit 150 may store in advance the resonant frequency in an environment where the magnetic field strength is zero as a reference frequency, and may identify the magnetic field of the device under test 10 by calculating whether the measurement result of the light intensity input from the light receiving unit 140, i.e., the measured resonant frequency, is divided into two, and if so, how much it deviates from the reference frequency. In other words, the identifying unit 150 may identify the magnetic field of the device under test 10 by calculating the amount of deviation of the measured resonant frequency from the reference frequency. Note that, when the quantum sensor 110 arranged close to the device under test 10 detects both the magnetic field and the temperature, a dip in the resonant frequency that deviates from the reference frequency depending on the temperature may be separated into two.

[0060] 7 is a schematic cross-sectional view showing the measuring apparatus 100 according to the first embodiment in a state where the attachment surface of the sheet 111 is changed and the sheet 111 is in contact with the device under test 10. In the measuring apparatus 100 according to this embodiment, the quantum sensor 110 may be provided on a main surface of the transparent member 170 that does not contact the device under test 10. More specifically, as shown in FIG. 7, the quantum sensor 110 may be embedded in the sheet 111 attached to the main surface of the transparent member 170.

[0061] Here, as a comparative example to the measuring device 100 according to this embodiment, we will assume a measuring device in which a temperature control unit such as a heat sink or air-cooling fan is placed over the device under test 10 to prevent the device under test 10 from generating heat, and the temperature of the device under test 10 is controlled by the temperature control unit while measuring the temperature distribution of the device under test 10.

[0062] As described above, when the device under test 10 is operated, one or more dies 11 included in the device under test 10 generate heat. The heat generation behavior of the device under test 10 varies due to individual differences between the dies 11 in the device under test 10. In so-called chiplet or 3D packaging, multiple dies 11 are included in the same package, and dies 11 from multiple vendors are mixed, making heat generation prediction and control more complicated, and raising concerns about damage such as cracks to each die 11, interposer 15, and their contact points, which have different expansion coefficients. In the measurement device of the comparative example, a temperature control unit is attached to the device under test 10, so it is impossible to determine from the outside how the device under test 10 is generating heat.

[0063] As another comparative example of the measurement apparatus 100 according to this embodiment, a measurement method is assumed in which temperature sensors, such as DTSs and thermal diodes, are incorporated into the package of the device under test 10 to measure the temperature distribution of the device under test 10. According to this measurement method, the number and locations at which temperature sensors can be incorporated are limited, and the device under test 10 is packaged with temperature sensors incorporated in locations predicted to be hot during the design of the device under test 10. However, the locations that become hot during actual operation of the device under test 10 may differ significantly from the predicted locations. It is not possible to install the temperature sensor in an optimal location that takes into account the influence of adjacent dies 11, making it difficult to predict the optimal location. Because the device under test 10 is also packaged, the location of the temperature sensor cannot be changed. Furthermore, due to circuit constraints on the device under test 10, it may not be possible to place the temperature sensor where desired. Furthermore, the heat generation distribution of a single die 11 may differ from the critical heat generation points when multiple dies 11 are packaged. Therefore, it is not possible to pinpoint the desired temperature measurement location. Temperature anomalies can occur at points other than the sensing point, making it impossible to read all the data. Furthermore, in FinFETs, GAAs, CFETs, and other devices, there is no place for heat to escape and heat sources are inherent, making temperature analysis and appropriate control even more critical, and ensuring reliability is difficult.

[0064] In contrast, the measurement apparatus 100 according to this embodiment identifies the temperature or magnetic field of the device under test 10 by measuring the intensity of fluorescent light emitted from quantum sensors 110 arranged close to the device under test 10 while the device under test 10 is in operation. A large number of quantum sensors 110 in the measurement apparatus 100 can be arranged close to the device under test 10 without being affected by the circuit area or design of the device under test 10. Therefore, the measurement apparatus 100 can simultaneously measure a large number of sensing points across the entire surface of the device under test 10 while one or more dies 11 remain packaged, and can visualize the minute temperature distribution or magnetic field distribution of the device under test 10.

[0065] 8 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 200 according to the second embodiment are in contact with the device under test 10. The measuring apparatus 200 according to the second embodiment differs from the measuring apparatus 100 according to the first embodiment in that the quantum sensor 110 is embedded in a transparent member 270. Other configurations of the measuring apparatus 200 according to the second embodiment are similar to the corresponding configurations of the measuring apparatus 100 according to the first embodiment, and similar reference numerals are used to omit redundant description. The measuring apparatus 200 according to the second embodiment also has the same effects as the measuring apparatus 100 according to the first embodiment.

[0066] 9 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 300 according to the third embodiment are in contact with the device under test 20. The measuring apparatus 300 according to the third embodiment differs from the measuring apparatus 100 according to the first embodiment in that it does not include a quantum sensor. In the example shown in FIG. 9, the measuring apparatus 300 identifies the temperature or magnetic field of the device under test 20 instead of the device under test 10. Other configurations of the measuring apparatus 300 according to the third embodiment are similar to the corresponding configurations of the measuring apparatus 100 according to the first embodiment, and similar reference numerals are used to omit redundant description.

[0067] In this embodiment, the device under test 20 is provided with a quantum sensor 27. Specifically, the device under test 20 includes the quantum sensor 27 provided in the package 13. Other configurations of the device under test 20 according to the third embodiment are similar to the corresponding configurations of the device under test 10 according to the first embodiment, and therefore similar reference numerals are used and redundant explanations will be omitted.

[0068] The quantum sensor 27 is provided on the package 13 on the side opposite the interposer 15. In the example shown in Fig. 9, the quantum sensor 27 is embedded in the package 13. Because the sealing material of the package 13 is not easily transparent to light, the quantum sensor 27 is embedded near the surface on the opposite side of the package 13. The measuring apparatus 300 and the device under test 20 according to the third embodiment also have the same effects as the measuring apparatus 100 and the device under test 10 according to the first embodiment.

[0069] Note that, when the quantum sensor 27 is embedded in the package 13 as in this embodiment, the device under test 20 with the embedded quantum sensor 27 may be shipped as is. In this case, the quantum sensor 27 can be used to check how the device under test 20 behaves in the environment in which the device under test 20 is actually used. Furthermore, if the device under test 20 is determined to be defective and is returned to the sender, the behavior of the device under test 20 can also be inspected using the quantum sensor 27. In this way, the quantum sensor embedded in the device under test 20 is still useful even after the device under test 20 has been shipped.

[0070] 10 is a schematic cross-sectional view showing a state in which the pusher 160 and the like of the measuring apparatus 300 according to the third embodiment are in contact with the device under test 30. In the example shown in FIG. 10, the measuring apparatus 300 identifies the temperature or magnetic field of the device under test 30 instead of the device under test 10.

[0071] In the device under test 30, the quantum sensor 27 is provided on the main surface of the package 13. More specifically, the quantum sensor 27 is embedded in a sheet 39 attached to the main surface of the package 13. Note that the quantum sensor 110 may be embedded in a thin plate made of glass or the like instead of the sheet 111. This plate may also be referred to as a film plate.

[0072] The sheet 39 with the quantum sensors 27 embedded therein may be attached to the device under test 30 only when the measuring apparatus 300 determines the temperature or magnetic field of the device under test 30, and may be detached from the device under test 30 and attached to another device under test 30 as soon as the processing by the measuring apparatus 300 is completed. The measuring apparatus 300 and the device under test 30 according to the third embodiment also have the same effects as the measuring apparatus 100 and the device under test 10 according to the first embodiment.

[0073] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0074] For example, the measurement device may include a measurement unit that measures the signal strength of an electrical signal output from a quantum sensor to which microwaves and excitation light are applied. The measurement device may identify the temperature or magnetic field of the device under test based on the measured signal strength. In this case, wiring for transmitting the electrical signal generated by the quantum sensor to the measurement unit is provided on the transparent member of the pusher on which the quantum sensor is provided or on the package of the device under test. For example, if the quantum sensor is provided on the transparent member of the pusher, transparent electrodes may be disposed on the transparent member and electrical wiring may be routed in the surface direction.

[0075] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and that the processes can be performed in any order unless the output of a previous process is used in a subsequent process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," etc. for convenience, this does not mean that the processes must be performed in this order.

[0076] 10 Device under test 11 Die 13 Package 15 Interposer 100 Measuring device 110 Quantum sensor 111 Sheet 120 Emitting section 121 Line 130 Irradiating section 131 Reflecting member 133 Lens system 140 Light receiving section 150 Identifying section 160 Pusher 170 Transparent member 180 Storage section 190 Performance board 200 Measuring device 270 Transparent member 300 Measuring device 20 Device under test 27 Quantum sensor 30 Device under test 39 Sheet

Claims

1. A measurement apparatus comprising: a quantum sensor arranged in the vicinity of a device under test; an emission unit that emits microwaves to the quantum sensor; an irradiation unit that irradiates excitation light to the quantum sensor; a measurement unit that measures the light intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the signal intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied; and an identification unit that identifies the temperature or magnetic field of the device under test based on the light intensity or the signal intensity.

2. The measurement device according to claim 1, wherein the quantum sensor includes a diamond quantum sensor or a SiC quantum sensor.

3. The measurement device according to claim 1, further comprising: a plate-shaped transparent member that transmits the excitation light and the fluorescence; and a pusher that has a refrigerant flow path formed through the transparent member through which a refrigerant for cooling the device under test flows, and that moves the transparent member toward the device under test and brings the transparent member into contact with the device under test.

4. The measurement apparatus according to claim 3, wherein the quantum sensor is provided on a main surface of the transparent member that contacts the device under test.

5. The measurement apparatus according to claim 3, wherein the quantum sensor is provided on a main surface of the transparent member that does not contact the device under test.

6. The measurement device according to claim 4 or 5, wherein the quantum sensor is embedded in either a plate or a sheet attached to the main surface of the transparent member.

7. The measurement device according to claim 3, wherein the quantum sensor is embedded in the transparent member.

8. The measurement device described in claim 3, wherein the irradiation unit irradiates the quantum sensor with the excitation light via the pusher and the transparent member, and the measurement unit receives, via the pusher and the transparent member, fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied.

9. The measurement device according to claim 1, wherein the determination unit determines the temperature or magnetic field of the device under test based on the frequency characteristics of the light intensity of the quantum sensor, which change depending on the ambient temperature or magnetic field.

10. The measurement device according to claim 1, wherein the radiation unit radiates the microwaves at different frequencies, and the identification unit identifies the temperature or magnetic field of the device under test based on the different light intensities measured by the measurement unit for the microwaves at the different frequencies.

11. The measurement apparatus according to claim 10, wherein the identification unit identifies a resonant frequency of the quantum sensor that changes depending on the ambient temperature or magnetic field, and identifies the temperature or magnetic field of the device under test based on the identified resonant frequency.

12. A measurement apparatus comprising: an emission unit that emits microwaves to a quantum sensor provided in a device under test; an irradiation unit that irradiates excitation light to the quantum sensor; a measurement unit that measures the light intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the signal intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied; and an identification unit that identifies the temperature or magnetic field of the device under test based on the light intensity or the signal intensity.

13. A measurement method comprising: radiating microwaves to a quantum sensor placed adjacent to a device under test or provided in the device under test; irradiating the quantum sensor with excitation light; measuring the light intensity of fluorescence emitted from the quantum sensor to which the microwaves and the excitation light have been applied, or the signal intensity of an electrical signal output from the quantum sensor to which the microwaves and the excitation light have been applied; and determining the temperature or magnetic field of the device under test based on the light intensity or the signal intensity.

14. A device under test comprising: one or more dies; a package in which the one or more dies are sealed with resin; and a quantum sensor provided in the package.

15. The device under test according to claim 14, further comprising an interposer electrically connected to the one or more dies, wherein the quantum sensor is provided on a side of the package opposite the side of the interposer.

16. The device under test of claim 14, wherein the quantum sensor is embedded in the package.

17. The device under test according to claim 14, wherein the quantum sensor is provided on a main surface of the package.

18. The device under test according to claim 14, wherein the quantum sensor is embedded in either a plate or a sheet attached to the main surface of the package.

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