Atomic layer deposition apparatus

Abstract

Provided is a deposition apparatus capable of obtaining high-quality atomic layer deposition materials. A deposition apparatus, according to one aspect of the present invention, may comprise: a deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate by using an inert gas as a medium; a transfer module configured to transfer the substrate into and out of the process chamber; and an exhaust module configured to discharge a portion of the inert gas in the process chamber to the outside of the process chamber, wherein the inside of the process chamber may be at atmospheric pressure or at a positive pressure. A deposition apparatus, according to another aspect of the present invention, may comprise: a deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate by using an inert gas as a medium; a transfer module configured to transfer the substrate into and out of the process chamber; and an air curtain module configured to inject a predetermined flow rate of the inert gas onto the substrate from a front side of the deposition module when viewed in a transfer direction of the substrate, wherein the inside of the process chamber may be at atmospheric pressure or at a positive pressure.

Description

Atomic Layer Deposition Device

[0001] The present invention relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus including an exhaust module or an air curtain module capable of obtaining a high-quality atomic layer deposition product.

[0002] A method for depositing thin films on substrates or wafers is atomic layer deposition (ALD). This method involves separating and supplying reactant materials, then depositing particles formed by chemical reactions between reactant gases onto the substrate or wafer surface to form a thin film. ALD offers the advantage of allowing for fine control of film thickness.

[0003] However, the above-mentioned atomic layer deposition method has the disadvantage of taking a long time and reducing productivity because it usually requires creating a vacuum inside the chamber, heating it with a heater, and sequentially injecting purge gas, precursor, and reaction gas.

[0004] To overcome this, methods for performing atomic layer deposition at atmospheric or normal pressure are being studied. A method has been devised to sequentially spray precursors and deposition gases onto the substrate by a head while transporting the substrate in a roll-to-roll manner to perform atomic layer deposition at atmospheric or normal pressure, thereby continuously depositing the precursors onto the substrate. However, this method also has the problem that the quality of the thin film is lowered due to abnormal reactions of the precursors caused by purge gases and reaction gases remaining in the chamber, and the temperature of the substrate is not easily controlled before deposition on the substrate, which reduces the quality of the thin film on which atomic layer deposition is performed.

[0005] The present invention has been devised to solve the above-mentioned problems, and its purpose is to provide a deposition device capable of obtaining a high-quality atomic layer deposition product.

[0006] In addition, the present invention aims to provide a deposition device capable of obtaining a high-quality atomic layer deposition product by inducing a gradual temperature rise of the substrate.

[0007] In addition, the present invention aims to provide a deposition device capable of obtaining a high-quality atomic layer deposition product by minimizing the mixing of precursors and other gases for uniform coating of atomic layers.

[0008] However, the technical problems to be solved by the present invention are not limited to the problems described above, and other problems not mentioned can be clearly understood by those skilled in the art from the description of the invention described below.

[0009] A deposition device according to one aspect of the present invention comprises a deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate using an inert gas as a medium, a transport module configured to transport the substrate into and out of the process chamber, and an exhaust module configured to exhaust a portion of the inert gas within the process chamber to the outside of the process chamber, wherein the inside of the process chamber may be under atmospheric pressure or positive pressure conditions.

[0010] Preferably, the exhaust module may include a body disposed at the lower portion of the substrate and an exhaust portion provided in the body and configured to discharge some of the inert gas toward the lower portion of the process chamber.

[0011] Preferably, the body and the substrate can be arranged with a predetermined distance apart in the vertical direction.

[0012] Preferably, the transport module may include a supply roll provided outside the process chamber and configured to transport the substrate into the process chamber, and a take-up roll provided outside the process chamber and configured to transport the substrate on which the atomic layer has been deposited outside the process chamber.

[0013] Preferably, the exhaust section is provided along the transport direction of the substrate and includes a plurality of slits configured to discharge some of the inert gas outside the process chamber, and the plurality of slits can be arranged at a predetermined interval from each other.

[0014] Preferably, the slit may be configured such that the size of the outlet portion is larger than the size of the inlet portion.

[0015] Preferably, the exhaust section is provided along the transport direction of the substrate and includes a plurality of holes configured to discharge some of the inert gas outside the process chamber, and the plurality of holes may be arranged at a predetermined interval from each other.

[0016] Preferably, the hole may be configured such that the size of the outlet is larger than the size of the inlet.

[0017] Preferably, the exhaust section is provided in a plurality along the transport direction of the substrate on the body, and the size of the inlet of the exhaust section in the central region of the body is formed to be larger than the size of the inlet of the exhaust section in the side region of the body, and the exhaust module further includes an exhaust guide section provided at the outlet of the exhaust section and configured to guide the discharge of the inert gas toward the lower side of the process chamber, and the exhaust guide section includes a first inclined section configured to be inclined downward from a region corresponding to the central region of the body toward a region corresponding to the side region of the body at the lower side of the body, and a second inclined section configured to be inclined downward from a region corresponding to the side region of the body toward a region corresponding to the central region of the body at the lower side of the body, and the second inclined section may be configured to have a shorter length in the vertical direction than the first inclined section.

[0018] Preferably, the exhaust module further includes an exhaust opening configured to open and close the exhaust portion, and the exhaust opening can be configured to open the exhaust portion when an inert gas is sprayed onto the substrate by the deposition module.

[0019] A deposition device according to another aspect of the present invention comprises a deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate using an inert gas as a medium, a transport module configured to transport the substrate into and out of the process chamber, and an air curtain module configured to spray a predetermined flow rate of inert gas onto the substrate from a front side of the deposition module when viewed in the transport direction of the substrate, wherein the inside of the process chamber may be under atmospheric pressure or positive pressure conditions.

[0020] Preferably, the deposition device further includes a preheating module configured to heat the substrate before an atomic layer is deposited on the substrate by the deposition module when viewed in the transport direction of the substrate, and the air curtain module may be provided between the preheating module and the deposition module when viewed in the transport direction of the substrate.

[0021] Preferably, the process chamber includes an inlet for receiving an inert gas at a predetermined pressure from outside the process chamber and injecting it into the deposition module, and an outlet for discharging at least a portion of the inert gas, including the inert gas sprayed onto the substrate by the deposition module and the inert gas sprayed onto the substrate by the air curtain module, to outside the process chamber, and the flow rate of the inert gas discharged to outside the process chamber through the outlet may be less than or equal to the flow rate of the inert gas injected from outside the process chamber through the inlet.

[0022] Preferably, when viewed in the transport direction of the above-mentioned description, a first partition wall configured to extend in the vertical direction may be provided between the preheating module and the air curtain module, and a second partition wall configured to extend in the vertical direction may be provided between the air curtain module and the deposition module.

[0023] Preferably, the temperature of the inert gas sprayed onto the substrate by the air curtain module may be higher than the heating temperature of the substrate by the preheating module.

[0024] Preferably, the temperature of the inert gas sprayed onto the substrate by the air curtain module can be set so that the difference between the temperature of the inert gas discharged outside the process chamber through the outlet and the temperature of the inert gas injected from outside the process chamber through the inlet is within a preset value.

[0025] Preferably, the air curtain module is configured to spray a predetermined flow rate of inert gas onto the substrate within the process chamber, and may include a curtain body provided between the first partition wall and the second partition wall when viewed in the transport direction of the substrate, and a gas guide portion configured to extend downward from at least one of the first partition wall and the second partition wall.

[0026] Preferably, the gas guide portion includes a first guide portion configured to extend downward from the first bulkhead and a second guide portion configured to extend downward from the second bulkhead, and the first guide portion and the second guide portion may be configured to be inclined toward an area of ​​the substrate corresponding to the deposition module in the transport direction of the substrate.

[0027] Preferably, the air curtain module includes a curtain body configured to inject a predetermined flow rate of an inert gas onto the substrate within the process chamber, and includes an isothermal medium receiving portion configured to surround the outer surface of the curtain body, with a portion disposed adjacent to an outlet through which the inert gas is discharged from the curtain body, and at least a portion surrounding the outer surface of the curtain body, wherein the isothermal medium receiving portion can be in contact with the outer surface of the curtain body to guide the temperature of the gas injected from the inside of the curtain body to be maintained constant.

[0028] Preferably, the air curtain module may include a curtain body configured to spray a predetermined flow rate of inert gas onto the substrate within the process chamber, an outlet through which the inert gas is discharged from the curtain body, and an air curtain opening / closing unit configured to adjust the degree of opening of the outlet according to the degree of temperature change when the substrate is heated by the preheating module.

[0029] The solutions to the above problems do not enumerate all features of the present invention. The various features of the present invention, along with their corresponding advantages and effects, can be understood in more detail by referring to the specific examples below.

[0030] According to an embodiment of the present invention, most of the inert gas flowing into the process chamber through a separate exhaust module can be discharged to a separate exhaust area separated from the area where the deposition module and the upper portion of the substrate are located. Accordingly, the issue of quality deterioration of an atomic layer deposition product due to abnormal precursor reactions that may occur when inert gas is discharged only through the outlet in the area where the deposition module and the upper portion of the substrate are located can be minimized.

[0031] Furthermore, according to another embodiment of the present invention, prior to atomic layer deposition on a substrate, a separate inert gas is sprayed onto the substrate, thereby inducing a gradual temperature rise in the preheated substrate. This gradual temperature rise in the substrate has the advantage of yielding a high-quality atomic layer deposition product.

[0032] Additionally, by spraying an inert gas onto the substrate surface before atomic layer deposition, the residual foreign matter on the substrate surface can be minimized. This provides the advantage of obtaining a higher-quality atomic layer deposition product.

[0033] In addition, various additional effects can be achieved through various embodiments of the present invention. These various effects of the present invention will be described in detail in each embodiment, or descriptions of effects easily understandable to those skilled in the art will be omitted.

[0034] The following drawings attached to this specification illustrate preferred embodiments of the present invention, and together with the detailed description of the invention described below, serve to further understand the technical idea of ​​the present invention, and therefore, the present invention should not be interpreted as being limited to matters described in such drawings.

[0035] Figure 1 is an overall conceptual diagram of a deposition device according to one embodiment of the present invention.

[0036] Figure 2 is a drawing showing a first aspect of the deposition device of Figure 1.

[0037] Figure 3 is a drawing showing a second aspect of the deposition device of Figure 1.

[0038] Figure 4 is a drawing showing a deposition device according to a second embodiment of the present invention.

[0039] Figure 5 is a drawing showing a deposition device according to a third embodiment of the present invention.

[0040] Figure 6 is an overall conceptual diagram of a deposition device according to a fourth embodiment of the present invention.

[0041] Figure 7 is a drawing showing a deposition device according to the fifth embodiment of the present invention.

[0042] Figure 8 is a drawing showing a deposition device according to the sixth embodiment of the present invention.

[0043] Figure 9 is a drawing showing a deposition device according to the seventh embodiment of the present invention.

[0044] Fig. 10 is a drawing showing a deposition device according to the eighth embodiment of the present invention.

[0045] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. Prior to this, it should be noted that the terms and words used in this specification and claims should not be construed as limited to their conventional or dictionary meanings. Based on the principle that the inventor can appropriately define the concepts of terms to best explain his or her invention, they should be interpreted in a way that aligns with the technical spirit of the present invention.

[0046] Accordingly, the embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, and it should be understood that there may be various equivalents and modified examples that can replace them at the time of this application.

[0047] Figure 1 is an overall conceptual diagram of a deposition device (10) according to one embodiment of the present invention.

[0048] Referring to FIG. 1, some of the deposition devices (10) according to one embodiment of the present invention may be provided within a process chamber (C). As an example, the deposition devices (10) may be atomic layer deposition (ALD) devices.

[0049] The interior of the above process chamber (C) can be operated under atmospheric pressure (760 mmHg) or positive pressure filled with an inert gas. That is, the deposition device (10) according to the present invention can deposit an atomic layer on a substrate (S) under atmospheric pressure or positive pressure. However, the configuration in which the interior of the process chamber (C) of the deposition device (10) is under atmospheric pressure or positive pressure is merely an exemplary configuration, and the process chamber (C) can also be operated under a vacuum or low pressure.

[0050] Specifically, the deposition device (10) may include a deposition module (100), a transport module (200), and an exhaust module (300).

[0051] The above deposition module (100) is provided in the process chamber (C) and can be configured to deposit an atomic layer on a substrate (S) using an inert gas as a medium. At this time, the substrate (S) may be, for example, a semiconductor substrate or a glass substrate, or a separator for a secondary battery or an electrode for a secondary battery, but is not limited thereto. Meanwhile, the atomic layer may be deposited on one surface of the substrate (S), and a configuration in which the atomic layer is deposited on both surfaces of the substrate (S) may also be included in an embodiment of the present invention.

[0052] Additionally, the inert gas may be, but is not limited to, nitrogen, argon, etc.

[0053] Specifically, in the deposition module (100), an inert gas, a precursor, a reactive gas, etc. can be injected. At this time, the deposition module (100) can inject the inert gas, the precursor, the reactive gas, etc. through an outlet. In the present invention, by depositing an atomic layer on a substrate (S) using an inert gas while maintaining the inside of the process chamber (C) at atmospheric pressure, a higher quality atomic layer deposition product can be obtained.

[0054] For example, the deposition module (100) can spray nitrogen (N2) gas, which is an inert gas, and TMA gas, which is a first precursor, onto the substrate (S). The TMA gas can be bonded to the surface of the substrate (S). Next, the remaining TMA gas can be sucked and removed from the surface of the substrate (S) by a purge operation by the deposition module (100). Then, nitrogen (N2) gas, which is an inert gas, and H2O gas, which is a second precursor or reaction gas, can be sprayed onto the substrate (S) by the deposition module (100). The H2O gas can chemically bond with TMA, which is a first precursor, on the substrate (S) to form an aluminum oxide (Al2O3) film.

[0055] The above-mentioned transport module (200) may be configured to transport the substrate (S) into and out of the process chamber (C). As an example, the transport module (200) may include a plurality of rollers to enable transport of the substrate (S). For example, the transport module (200) may be configured in a roll-to-roll manner.

[0056] The above exhaust module (300) may be configured to discharge some of the inert gas within the process chamber (C) to the outside of the process chamber (C).

[0057] At this time, the process chamber (C) may include an inlet (C1) and an outlet (C2).

[0058] The above inlet (C1) can be configured to inject an inert gas of a predetermined pressure from outside the process chamber (C) and into the deposition module (100).

[0059] The above outlet (C2) can be configured to discharge some of the inert gas sprayed onto the substrate (S) by the deposition module (100) to the outside of the process chamber (C).

[0060] At this time, both the inlet (C1) and the outlet (C2) may be provided in an area where the deposition module (100) and the upper portion of the substrate (S) in the process chamber (C) are located (e.g., an area where an atomic layer is deposited by the deposition module (100). In addition, the exhaust module (300) may be provided in an area other than an area where the deposition module (100) and the upper portion of the substrate (S) in the process chamber (C) are located.

[0061] Here, the process chamber (C) may include another exhaust region separate from the outlet portion (C2). In addition, through the exhaust region, some of the inert gas within the process chamber (C) discharged by the exhaust module (300) may be discharged outside the process chamber (C). At this time, the exhaust region may also be provided in a region other than the region where the deposition module (100) and the upper portion of the substrate (S) are located in the process chamber (C). In the drawings for explaining an embodiment of the present invention, the exhaust region is denoted by reference numeral 'A'.

[0062] For example, the exhaust amount of the inert gas within the process chamber (C) discharged by the exhaust module (300) through the exhaust area may be 100%, preferably 95%, of the inlet amount of the inert gas introduced into the process chamber (C) through the inlet portion (C1).

[0063] According to this embodiment configuration of the present invention, most of the inert gas flowing into the process chamber (C) through a separate exhaust module (300) can be discharged to a separate exhaust area spaced apart from the area where the deposition module (100) and the upper portion of the substrate (S) are located. Accordingly, it is possible to minimize the issue of quality deterioration of an atomic layer deposition product due to an abnormal reaction of a precursor that may occur when the inert gas is discharged only through the outlet (C2) in the area where the deposition module (100) and the upper portion of the substrate (S) are located.

[0064] Specifically, the exhaust module (300) may include a body (310) and an exhaust section (320).

[0065] The above body (310) can be placed at the bottom of the substrate (S).

[0066] The above exhaust unit (320) is provided in the body (310) and can be configured to discharge some of the inert gas toward the lower side of the process chamber (C).

[0067] That is, the exhaust module (300) may be placed at the bottom of the substrate (S), which is an area other than the area where the deposition module (100) and the upper portion of the substrate (S) are located in the process chamber (C). In addition, the exhaust area of ​​the process chamber (C) described above may be located at the bottom of the exhaust module (300).

[0068] According to this implementation configuration, most of the inert gas flowing into the process chamber (C) through a separate exhaust module (300) is discharged to a separate exhaust area spaced apart from the area where the deposition module (100) and the upper portion of the substrate (S) are located, and most of the inert gas can be induced to be discharged to the lower portion of the process chamber (C). Accordingly, it is possible to minimize the inert gas from flowing back and re-entering the area where the deposition module (100) and the upper portion of the substrate (S) are located, and to further minimize the issue of quality deterioration of the atomic layer deposition product due to abnormal reaction of the precursor.

[0069] In one embodiment, the body (310) and the substrate (S) may be arranged vertically spaced apart from each other by a predetermined distance within the process chamber (C).

[0070] Specifically, the distance between the body (310) and the substrate (S) may be set by considering a minimum distance between the body (310) and the substrate (S) that does not allow the substrate (S) to stick to the body (310) due to the inert gas exhaust action of the exhaust module (300), and a maximum distance between the body (310) and the substrate (S) that does not affect the exhaust of the inert gas through the exhaust module (300). For example, the distance between the body (310) and the substrate (S) may be 1 μm to 10 mm, and preferably 20 μm to 2 mm.

[0071] In one embodiment, the transport module (200) may include a supply roll (210) and a take-up roll (220).

[0072] The above supply roll (210) may be configured to be provided outside the process chamber (C) and to transport the substrate (S) into the process chamber (C). For example, the supply roll (210) may be rotated by a separate driving means (not shown) to transport the substrate (S) wrapped around the outer circumferential surface into the process chamber (C) through a transport inlet (200a) formed on one side of the process chamber (C).

[0073] The above-described winding roll (220) may be configured to be provided outside the process chamber (C) and to transport the substrate (S) on which an atomic layer has been deposited by the deposition module (100) inside the process chamber (C) to the outside of the process chamber (C). For example, the winding roll (220) may be rotated by a separate driving means (not shown) and may guide the substrate (S) on which an atomic layer has been deposited to be transported to the outside of the process chamber (C) by winding the substrate (S) drawn out from the transport outlet (200b) formed on the other side of the process chamber (C) around its outer circumferential surface.

[0074] Fig. 2 is a drawing showing a first aspect of the deposition device (10) of Fig. 1.

[0075] Referring to FIG. 2, the exhaust section (320) may include a plurality of slits (320a).

[0076] The above plurality of slits (320a) may be provided along the transport direction of the substrate (S).

[0077] In addition, each of the slits (320a) may be configured to form a vertical penetrating shape within the body (310) to discharge some of the inert gas sprayed from the deposition module (100) to the outside of the process chamber (C). Here, the penetrating shape of each of the slits (320a) may be a square shape when viewed from a horizontal plane, but is not limited thereto.

[0078] At this time, a plurality of slits (320a) can be arranged at a predetermined interval from each other in the transport direction of the substrate (S).

[0079] In one embodiment, the slit (320a) may be configured such that the size of the inlet portion is larger than the size of the outlet portion. Alternatively, the slit (320a) may be configured such that the size of the outlet portion is larger than the size of the inlet portion. Here, the inlet portion of the slit (320a) may be provided on a surface facing the lower portion of the substrate (S) in the body (310), and the outlet portion of the slit (320a) may be provided on a surface opposite to the surface facing the lower portion of the substrate (S) in the vertical direction in the body (310).

[0080] For example, the size of the outlet of the slit (320a) may be 10% to 500% of the size of the inlet. Preferably, the size of the outlet of the slit (320a) may be 20% to 200% of the size of the inlet.

[0081] In this way, since the exhaust section (320) is provided in a shape that penetrates the body (310) in the vertical direction with a predetermined area on the horizontal plane, directionality can be easily provided to the exhaust action of the inert gas through the exhaust module (300).

[0082] Here, when the size of the outlet of the slit (320a) is configured to be smaller than the size of the inlet, the discharge speed of the inert gas from the body (310) at the outlet of the slit (320a) may be faster than the inflow speed into the body (310) at the inlet. In this case, the inflow speed of the inert gas sprayed from the deposition module (100) toward the body (310) may be slow, but the discharge of the inert gas introduced into the body (310) to the exhaust area of ​​the process chamber (C) may be fast.

[0083] In another embodiment, the slit (320a) may be configured such that the size of the outlet portion is larger than the size of the inlet portion.

[0084] Here, the inflow rate into the body (310) at the inlet of the slit (320a) may be faster than the discharge rate of the inert gas from the body (310) at the outlet. In this case, the discharge rate of the inert gas introduced into the body (310) to the exhaust region of the process chamber (C) may be slow, but the inflow rate of the inert gas sprayed from the deposition module (100) toward the body (310) may be relatively fast. Accordingly, the inert gas can be minimized from flowing back to the region where the deposition module (100) and the upper portion of the substrate (S) are located.

[0085] Fig. 3 is a drawing showing a second aspect of the deposition device (10) of Fig. 1.

[0086] Referring to FIG. 3, the exhaust section (320) may include a plurality of holes (320b).

[0087] The above plurality of holes (320b) may be provided along the transport direction of the substrate (S).

[0088] In addition, each hole (320b) may be configured to form a vertical penetrating shape within the body (310) to discharge some of the inert gas sprayed from the deposition module (100) to the outside of the process chamber (C). Here, the penetrating shape of each hole (320b) may be circular when viewed on a horizontal plane.

[0089] At this time, a plurality of holes (320b) can be arranged at a predetermined distance from each other in the transport direction of the substrate (S).

[0090] In one embodiment, the hole (320b) may be configured such that the size of the inlet portion is larger than the size of the outlet portion. Alternatively, the hole (320b) may be configured such that the size of the outlet portion is larger than the size of the inlet portion. Here, the inlet portion of the hole (320b) may be provided on a surface facing the lower portion of the substrate (S) in the body (310), and the outlet portion of the hole (320b) may be provided on a surface opposite to the surface facing the lower portion of the substrate (S) in the vertical direction in the body (310).

[0091] For example, the size of the outlet of the hole (320b) may be 10% to 500% of the size of the inlet. Preferably, the size of the outlet of the hole (320b) may be 20% to 200% of the size of the inlet.

[0092] In this way, since the exhaust section (320) is provided in a shape that penetrates the body (310) in the vertical direction with a predetermined area on the horizontal plane, directionality can be easily provided to the exhaust action of the inert gas through the exhaust module (300).

[0093] Here, when the size of the outlet of the hole (320b) is configured to be smaller than the size of the inlet, the discharge speed of the inert gas from the body (310) at the outlet of the hole (320b) may be faster than the inflow speed into the body (310) at the inlet. In this case, the inflow speed of the inert gas sprayed from the deposition module (100) toward the body (310) may be slow, but the discharge of the inert gas introduced into the body (310) to the exhaust area of ​​the process chamber (C) may be fast.

[0094] In one embodiment, the hole (320b) may be configured such that the size of the outlet is larger than the size of the inlet.

[0095] Here, the inflow rate into the body (310) at the inlet of the hole (320b) may be faster than the discharge rate of the inert gas from the body (310) at the outlet. In this case, the discharge rate of the inert gas introduced into the body (310) to the exhaust area of ​​the process chamber (C) may be slow, but the inflow rate of the inert gas sprayed from the deposition module (100) toward the body (310) may be relatively fast. Accordingly, the inert gas can be minimized from flowing back into the area where the deposition module (100) and the upper portion of the substrate (S) are located.

[0096] Figure 4 is a drawing showing a deposition device (12) according to a second embodiment of the present invention.

[0097] Since the deposition device (12) according to the present embodiment is similar to the deposition device (10) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0098] Referring to FIG. 4, in the deposition device (12), a plurality of exhaust sections (320) may be provided along the transport direction of the substrate (S) on the body (310).

[0099] At this time, the size of the inlet of the exhaust part (320) in the central area of ​​the body (310) may be formed to be larger than the size of the inlet of the exhaust part (320) in the side area of ​​the body (310).

[0100] This is to discharge the inert gas more quickly through the central region of the body (310), which is the region where the flow of the inert gas is concentrated, considering that the flow of the inert gas sprayed onto the substrate (S) through the outlet of the deposition module (100) is initially concentrated in the central portion of the substrate (S) and then gradually transferred to the side region.

[0101] In particular, in the above deposition device (12), the exhaust module (300) may further include an exhaust guide portion (330).

[0102] The above exhaust guide part (330) is provided at the outlet of the exhaust part (320) and can be configured to guide the discharge of the inert gas toward the lower side of the process chamber (C).

[0103] Here, the exhaust guide portion (330) may include a first inclined portion (332) and a second inclined portion (334).

[0104] The first inclined portion (332) may be configured to slope downward from an area corresponding to the central area of ​​the body (310) to an area corresponding to the side area of ​​the body (310) at the lower side of the body (310). This is to prevent the inert gas flowing into the exhaust area of ​​the process chamber (C) through the outlet of the exhaust portion (320) in the central area of ​​the body (310) through the first inclined portion (332) from flowing downwardly to an area where the deposition module (100) and the upper portion of the substrate (S) are located.

[0105] The second inclined portion (334) may be configured to slope downward from an area corresponding to a side area of ​​the body (310) to an area corresponding to a central area of ​​the body (310) on the lower side of the body (310). This is to provide a downward sloped flow to the inert gas flowing into the exhaust area of ​​the process chamber (C) through the outlet of the exhaust portion (320) in the side area of ​​the body (310) through the second inclined portion (334), thereby preventing the inert gas from flowing back to the area where the deposition module (100) and the upper portion of the substrate (S) are located.

[0106] At this time, the second slope (334) may be configured to have a shorter length in the vertical direction than the first slope (332).

[0107] That is, since the first inclined portion (332) can be formed to be longer than the second inclined portion (334), the inert gas flowing into the exhaust region side of the process chamber (C) through the outlet of the exhaust portion (320) in the central region of the body (310), which is the region where the flow of the inert gas is concentrated, can flow into the exhaust region side of the process chamber (C) more quickly. Accordingly, the inert gas can be discharged more quickly to the exhaust region side of the process chamber (C) through the outlet of the exhaust portion (320) in the entire region of the body (310) (including the central region and the side regions).

[0108] Figure 5 is a drawing showing a deposition device (14) according to a third embodiment of the present invention.

[0109] Since the deposition device (14) according to the present embodiment is similar to the deposition device (10) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0110] Referring to FIG. 5, in the deposition device (14), the exhaust module (300) may include an exhaust opening / closing unit (340).

[0111] The above exhaust opening / closing unit (340) may be configured to open / close the exhaust unit (320). Here, the exhaust opening / closing unit (340) may be provided at least at one of the inlet and outlet of the exhaust unit (320). As an example, the exhaust opening / closing unit (340) may be a valve, but is not limited thereto.

[0112] At this time, the exhaust opening / closing unit (340) may be configured to open the exhaust opening / closing unit (320) when an inert gas is sprayed onto the substrate (S) by the deposition module (100). As an example, the deposition device (14) may be equipped with a separate control module (not shown) to control the operation of the exhaust opening / closing unit (340) when an inert gas is sprayed onto the substrate (S) by the deposition module (100).

[0113] That is, in the present embodiment, the exhaust port (320) can be selectively opened by the exhaust opening / closing unit (340) only when the inert gas is sprayed onto the substrate (S) by the deposition module (100), so that the inflow of other unnecessary gases into the exhaust port (320) can be minimized when the inert gas is not sprayed by the deposition module (100).

[0114] Therefore, in this embodiment, by guiding the exhaust port (320) to be opened only during the inert gas injection step by the deposition module (100), which is a step requiring rapid discharge of the inert gas, it is possible to guide most of the inert gas to be discharged toward the lower side of the process chamber (C) more quickly and reliably. In addition, the issue of quality deterioration of the atomic layer deposition product due to abnormal reaction of the precursor can be further minimized.

[0115] Figure 6 is an overall conceptual diagram of a deposition device (1010) according to a fourth embodiment of the present invention.

[0116] Referring to FIG. 6, some of the deposition devices (1010) according to the fourth embodiment of the present invention may be provided within the process chamber (C). As an example, the deposition devices (1010) may be atomic layer deposition (ALD) devices.

[0117] The interior of the above process chamber (C) can be operated under a normal pressure (760 mmHg) or positive pressure state filled with an inert gas. That is, the deposition device (1010) according to the present invention can deposit an atomic layer on a substrate (S) under a normal pressure or positive pressure state. However, the configuration in which the interior of the process chamber (C) of the deposition device (1010) is under a normal pressure or positive pressure state is merely an exemplary configuration, and the process chamber (C) can also be operated under a vacuum or low pressure state.

[0118] Specifically, the deposition device (1010) may include a deposition module (1100), a transport module (1200), and an air curtain module (1300).

[0119] The above deposition module (1100) is provided in the process chamber (C) and can be configured to deposit an atomic layer on a substrate (S) using an inert gas as a medium. At this time, the substrate (S) may be, for example, a semiconductor substrate or a glass substrate, or a separator for a secondary battery or an electrode for a secondary battery, but is not limited thereto. Meanwhile, the atomic layer may be deposited on one surface of the substrate (S), and a configuration in which the atomic layer is deposited on both surfaces of the substrate (S) may also be included in an embodiment of the present invention.

[0120] Additionally, the inert gas may be, but is not limited to, nitrogen, argon, etc.

[0121] Specifically, in the deposition module (1100), an inert gas, a precursor, a reactive gas, etc. can be injected. At this time, the deposition module (1100) can inject the inert gas, the precursor, the reactive gas, etc. through an outlet. In the present invention, by depositing an atomic layer on a substrate (S) using an inert gas while maintaining the inside of the process chamber (C) at atmospheric pressure, a higher quality atomic layer deposition product can be obtained.

[0122] For example, the deposition module (1100) can spray nitrogen (N2) gas, which is an inert gas, and TMA gas, which is a first precursor, onto the substrate (S). The TMA gas can be bonded to the surface of the substrate (S). Next, the remaining TMA gas can be sucked and removed from the surface of the substrate (S) by a purge operation by the deposition module (1100). Then, nitrogen (N2) gas, which is an inert gas, and H2O gas, which is a second precursor or reaction gas, can be sprayed onto the substrate (S) by the deposition module (1100). The H2O gas can chemically bond with TMA, which is a first precursor, on the substrate (S) to form an aluminum oxide (Al2O3) film.

[0123] The above-mentioned transport module (1200) may be configured to transport a substrate (S) into and out of a process chamber (C). As an example, the transport module (1200) may include a plurality of rollers to enable transport of the substrate (S). For example, the transport module (1200) may be configured in a roll-to-roll manner.

[0124] In the fourth embodiment, the transport module (1200) may include a supply roll (1210) and a take-up roll (1220).

[0125] The above supply roll (1210) may be configured to be provided outside the process chamber (C) and to transport the substrate (S) into the process chamber (C). For example, the supply roll (1210) may be rotated by a separate driving means (not shown) to transport the substrate (S) wrapped around the outer circumferential surface into the process chamber (C) through a transport inlet (1200a) formed on one side of the process chamber (C).

[0126] The above-described winding roll (1220) may be configured to be provided outside the process chamber (C) and to transport the substrate (S) on which an atomic layer has been deposited by the deposition module (1100) inside the process chamber (C) to the outside of the process chamber (C). For example, the winding roll (1220) may be rotated by a separate driving means (not shown) and may guide the substrate (S) on which an atomic layer has been deposited to be transported to the outside of the process chamber (C) by winding the substrate (S) drawn out from the transfer outlet (1200b) formed on the other side of the process chamber (C) around its outer circumferential surface.

[0127] The above air curtain module (300, air curtain module) can be configured to spray a predetermined flow rate of inert gas onto the substrate (S) from the front side of the deposition module (1100) when viewed in the transport direction of the substrate (S).

[0128] For example, the inert gas injected by the air curtain module (1300) may be nitrogen, argon, etc., but is not limited thereto.

[0129] Specifically, the air curtain module (1300) may include a curtain body (1310) and an exhaust port (1310a).

[0130] The above curtain body (1310) can be configured to spray a predetermined flow rate of inert gas onto a substrate (S) within a process chamber (C).

[0131] The above discharge port (1310a) may be a portion through which inert gas is discharged from the curtain body (1310).

[0132] Referring again to FIG. 6, the deposition device (1010) may further include a pre-heating module (400).

[0133] The above preheating module (1400) may be provided in front of the deposition module (1100) when viewed in the transport direction of the substrate (S).

[0134] Specifically, the preheating module (1400) may be configured to heat the substrate (S) before an atomic layer is deposited on the substrate (S) by the deposition module (1100). As an example, the heating temperature of the preheating module (1400) for the substrate (S) may be 80°C to 90°C, but is not limited thereto.

[0135] At this time, the air curtain module (1300) may be provided between the preheating module (1400) and the deposition module (1100) when viewed from the transport direction of the substrate (S).

[0136] That is, the air curtain module (1300) can spray a predetermined flow rate of inert gas onto the substrate (S) so that a gradual temperature rise of the substrate (S) preheated by the preheating module (1400) occurs before atomic layer deposition is performed on the substrate (S).

[0137] According to this embodiment of the present invention, before atomic layer deposition is performed on the substrate (S), a separate inert gas is sprayed onto the substrate (S), thereby inducing a gradual temperature rise of the preheated substrate (S). Accordingly, there is an advantage in that a high-quality atomic layer deposition product can be obtained.

[0138] In addition, by spraying an inert gas on the surface of the substrate (S) before atomic layer deposition is performed on the substrate (S), the residual foreign substances on the surface of the substrate (S) can be minimized. Accordingly, there is an advantage in that a higher quality atomic layer deposition product can be obtained.

[0139] Referring to FIG. 6, the process chamber (C) may include an inlet (C11) and an outlet (C12).

[0140] The above inlet (C11) can be configured to inject an inert gas of a predetermined pressure from outside the process chamber (C) and into the deposition module (1100).

[0141] The above outlet (C12) may be configured to discharge at least a portion of the inert gas, including the inert gas sprayed onto the substrate (S) by the deposition module (1100) and the inert gas sprayed onto the substrate (S) by the air curtain module (1300), to the outside of the process chamber (C).

[0142] At this time, the flow rate of the inert gas discharged outside the process chamber (C) through the outlet (C12) may be less than or equal to the flow rate of the inert gas injected from outside the process chamber (C) through the inlet (C11).

[0143] According to this implementation configuration, the interior of the process chamber (C) can be maintained at atmospheric pressure conditions (or a pressure slightly higher than atmospheric pressure) suitable for high-quality atomic layer deposition on the substrate (S) by additionally injecting inert gas into the process chamber (C) by the air curtain module (1300).

[0144] In addition, since additional inert gas can be injected into the process chamber (C) by the air curtain module (1300), there is an advantage in that the purity of the inert gas can be maintained at a high level compared to other gases in the process chamber (C).

[0145] In the fourth embodiment, when viewed from the transport direction of the substrate (S), a first partition wall (W11) configured to extend in the vertical direction may be provided between the preheating module (1400) and the air curtain module (1300).

[0146] In addition, a second partition wall (W12) configured to extend in the vertical direction may be provided between the air curtain module (1300) and the deposition module (1100).

[0147] Specifically, the curtain body (1310) may be provided between the first bulkhead (W11) and the second bulkhead (W12) when viewed in the transport direction of the substrate (S).

[0148] According to this implementation configuration, when viewed from the transport direction of the substrate (S), the space in which the preheating module (1400) is arranged, the space in which the air curtain module (1300) is arranged, and the space in which the deposition module (1100) is arranged can be mutually separated within the process chamber (C). Accordingly, the preheating operation of the substrate (S) by the preheating module (1400), the inert gas spraying operation on the substrate (S) by the air curtain module (1300), and the atomic layer deposition operation on the substrate (S) by the deposition module (1100) can be independently and smoothly performed without mutual interference.

[0149] In the fourth embodiment, the temperature of the inert gas sprayed by the air curtain module (1300) to the substrate (S) may be higher than the heating temperature of the preheating module (1400) to the substrate (S).

[0150] According to this implementation configuration, after the preheating operation of the substrate (S) by the preheating module (1400), an inert gas having a temperature higher than the preheating temperature can be sprayed onto the substrate (S), so that the process temperature can be induced to increase gradually to perform a smooth atomic layer deposition operation on the substrate (S).

[0151] In the fourth embodiment, the temperature of the inert gas sprayed onto the substrate (S) by the air curtain module (1300) can be set so that the difference between the temperature of the inert gas discharged outside the process chamber (C) through the outlet (C12) and the temperature of the inert gas injected from outside the process chamber (C) through the inlet (C11) is within a preset value.

[0152] At this time, the temperature of the inert gas sprayed onto the substrate (S) by the air curtain module (1300) can be set within a limit in which the temperature within the process chamber (C) does not change rapidly due to the air curtain module (1300).

[0153] For example, the temperature of the inert gas sprayed by the air curtain module (1300) to the substrate (S) can be set to be within 50°C, preferably within 10°C, of ​​the preset value.

[0154] FIG. 7 is a drawing showing a deposition device (1012) according to the fifth embodiment of the present invention.

[0155] Since the deposition device (1012) according to the present embodiment is similar to the deposition device (1010) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0156] Referring to FIG. 7, in the deposition device (1012), the air curtain module (1300) may include a gas guide portion (1320).

[0157] The above gas guide portion (1320) may be configured to extend downward from at least one of the first bulkhead (W11) and the second bulkhead (W12). This is to provide a downwardly inclined flow to the inert gas sprayed from the outlet (1310a) of the curtain body (1310) toward the substrate (S) through the gas guide portion (1320), thereby inducing the inert gas to be sprayed more stably and easily toward the substrate (S).

[0158] According to this implementation configuration, before atomic layer deposition is performed on the substrate (S), a separate inert gas can be sprayed onto the substrate (S) more stably, so that a gradual temperature rise of the preheated substrate (S) can be induced more stably.

[0159] FIG. 8 is a drawing showing a deposition device (1014) according to the sixth embodiment of the present invention.

[0160] Since the deposition device (1014) according to the present embodiment is similar to the deposition device (1010) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0161] Referring to FIG. 8, in the deposition device (1014), the gas guide part (1320) of the air curtain module (1300) may include a first guide part (1322) and a second guide part (1324).

[0162] The above first guide portion (1322) can be configured to extend downward from the first bulkhead (W11).

[0163] The above second guide portion (1324) can be configured to extend downward from the second bulkhead (W12).

[0164] That is, in this embodiment, both sides of the curtain body (1310) of the air curtain module (1300) may be provided with a first guide portion (1322) extending downward from the first partition wall (W11) and a second guide portion (1324) extending downward from the second partition wall (W12).

[0165] At this time, the first guide part (1322) and the second guide part (1324) can be configured to be inclined toward the area of ​​the substrate (S) corresponding to the deposition module (1100) in the transport direction of the substrate (S).

[0166] That is, the inert gas sprayed by the air curtain module (1300) can be sprayed onto the substrate (S) along the transport path of the substrate (S) by the transport module (1200) until just before atomic layer deposition on the substrate (S) is performed by the deposition module (1100).

[0167] According to this implementation configuration, a separate inert gas can be sprayed onto the substrate (S) by the air curtain module (1300) just before atomic layer deposition is performed on the substrate (S), so that a gradual temperature rise of the preheated substrate (S) can be performed more stably, thereby providing an advantage in obtaining a higher quality atomic layer deposition product.

[0168] FIG. 9 is a drawing showing a deposition device (1016) according to the seventh embodiment of the present invention.

[0169] Since the deposition device (1016) according to the present embodiment is similar to the deposition device (1010) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0170] Referring to FIG. 9, in the deposition device (1016), the air curtain module (1300) may include an isothermal medium receiving portion (330).

[0171] The above isothermal medium receiving portion (330) may be positioned on the outer surface of the curtain body (1310) so that a portion thereof is adjacent to the outlet (1310a) of the curtain body (1310). In addition, at least a portion of the isothermal medium receiving portion (330) may be configured to surround the outer surface of the curtain body (1310).

[0172] At this time, the isothermal medium receiving portion (330) can guide the temperature of the gas sprayed from the inside of the curtain body (1310) through the outlet (1310a) by contacting the outer surface of the curtain body (1310) to be maintained constant. Here, a liquid (e.g., a liquid with a high specific heat) can be received inside the isothermal medium receiving portion (330).

[0173] As an example, the isothermal medium receiving portion (330) can be connected to a separate temperature control device (not shown) to ensure that the internal liquid temperature is maintained constant.

[0174] According to this implementation configuration, before atomic layer deposition is performed on the substrate (S), the temperature of a separate inert gas sprayed onto the substrate (S) through the isothermal medium receiving portion (330) can be maintained constant, so there is an advantage in that a gradual temperature rise of the preheated substrate (S) can be more stably induced.

[0175] FIG. 10 is a drawing showing a deposition device (1018) according to the eighth embodiment of the present invention.

[0176] Since the deposition device (1018) according to the present embodiment is similar to the deposition device (1010) according to the previous embodiment, duplicate descriptions of components that are substantially the same or similar to those of the previous embodiment will be omitted, and the following will focus on differences from the previous embodiment.

[0177] Referring to FIG. 10, in the deposition device (1018), the air curtain module (1300) may include an air curtain opening / closing unit (340).

[0178] The above air curtain opening / closing unit (340) may be configured to adjust the degree of opening of the outlet (1310a) according to the degree of temperature change when the substrate (S) is heated by the preheating module (1400). At this time, the outlet (1310a) may be provided with an opening / closing door (not shown) that can open / close the outlet (1310a). In addition, the air curtain module (1300) may be provided with a separate temperature sensor (not shown) that can detect the degree of temperature change when the substrate (S) is heated by the preheating module (1400).

[0179] For example, the air curtain opening / closing unit (340) can measure the degree of temperature change when the substrate (S) is heated by the preheating module (1400) through a separate processor (processor, not shown).

[0180] As an example, if a graph representing the temperature change of the substrate (S) measured over a specific time range when the substrate (S) is heated by the preheating module (1400) is discontinuous or the temperature change appears abruptly at a specific time range, the processor of the air curtain opening / closing unit (340) can control the outlet (1310a) to be opened to the maximum to maximize the flow rate of the inert gas sprayed onto the substrate (S) through the outlet (1310a).

[0181] As another example, if a graph representing a temperature change of the substrate (S) measured over a specific time range when the substrate (S) is heated by the preheating module (1400) is approximately continuous or the temperature change does not appear abruptly, the processor of the air curtain opening / closing unit (340) can appropriately control the flow rate of the inert gas sprayed onto the substrate (S) through the outlet (1310a) by controlling the degree of opening of the outlet (1310a) to be smaller than when the graph representing the temperature change of the substrate (S) is discontinuous or the temperature change appears abruptly within a specific time range.

[0182] As described above, although the present invention has been described by limited embodiments and drawings, the present invention is not limited thereto, and it is obvious that various modifications and variations are possible within the scope of the technical idea of ​​the present invention and the equivalent scope of the patent claims to be described below by a person having ordinary skill in the art to which the present invention pertains.

[0183] Meanwhile, although terms indicating directions such as up, down, left, right, front, and back are used in the present invention, it is obvious to those skilled in the art that these terms are only for convenience of explanation and may vary depending on the location of the target object or the location of the observer.

Claims

1. A deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate using an inert gas as a medium; a transport module configured to transport the substrate into and out of the process chamber; and An exhaust module configured to exhaust some of the inert gas within the process chamber to the outside of the process chamber; A deposition device characterized in that the inside of the process chamber is under atmospheric pressure or positive pressure conditions.

2. In paragraph 1, The above exhaust module, A body disposed below the above description; and A deposition device characterized by including an exhaust unit provided in the body and configured to discharge some of the inert gas toward the lower side of the process chamber.

3. In paragraph 2, A deposition device characterized in that the above body and the above substrate are arranged at a predetermined distance apart in the vertical direction.

4. In paragraph 1, The above transport module, A supply roll provided outside the process chamber and configured to transport the substrate into the process chamber; and A deposition apparatus characterized by including a winding roll provided outside the process chamber and configured to transport the substrate on which the atomic layer is deposited outside the process chamber.

5. In paragraph 2, The above exhaust part is, It comprises a plurality of slits provided along the transport direction of the above-mentioned device and configured to discharge some of the inert gas outside the process chamber, The above plurality of slits are, A deposition device characterized in that the devices are arranged at a predetermined distance from each other.

6. In paragraph 5, The above slit is, A deposition device characterized in that the size of the outlet is configured to be larger than the size of the inlet.

7. In paragraph 2, The above exhaust part is, It comprises a plurality of holes provided along the transport direction of the above-mentioned device and configured to discharge some of the inert gas outside the process chamber, The above plurality of holes are, A deposition device characterized in that the devices are arranged at a predetermined distance from each other.

8. In paragraph 7, The above hall is, A deposition device characterized in that the size of the outlet is configured to be larger than the size of the inlet.

9. In paragraph 2, The above exhaust part is, A plurality of them are provided along the direction of transfer of the above-mentioned material on the above-mentioned body, The size of the inlet of the exhaust part in the central area of ​​the body is formed to be larger than the size of the inlet of the exhaust part in the side area of ​​the body, The above exhaust module, It further includes an exhaust guide part provided at the outlet of the above exhaust part and configured to guide the discharge of the inert gas toward the lower side of the process chamber, The above exhaust guide part, At the lower side of the body, a first inclined portion configured to slope downward from an area corresponding to the central area of ​​the body toward an area corresponding to the side area of ​​the body; and At the lower side of the body, a second inclined portion is configured to slope downward from an area corresponding to a side area of ​​the body toward an area corresponding to a central area of ​​the body, A deposition device characterized in that the second inclined portion is configured to have a shorter length in the vertical direction than the first inclined portion.

10. In paragraph 2, The above exhaust module, Further comprising an exhaust opening / closing part configured to open / close the above exhaust part, The above exhaust opening and closing part is, A deposition device characterized in that the exhaust port is configured to open when an inert gas is sprayed onto the substrate by the deposition module.

11. A deposition module provided in a process chamber and configured to deposit an atomic layer on a substrate using an inert gas as a medium; a transport module configured to transport the substrate into and out of the process chamber; and An air curtain module configured to spray an inert gas of a predetermined flow rate onto the substrate from the front side of the deposition module when viewed in the transport direction of the substrate, A deposition device characterized in that the inside of the process chamber is under atmospheric pressure or positive pressure conditions.

12. In paragraph 11, The above deposition device, Further comprising a preheating module provided in front of the deposition module when viewed in the transport direction of the substrate and configured to heat the substrate before an atomic layer is deposited on the substrate by the deposition module; The above air curtain module, A deposition device characterized in that it is provided between the preheating module and the deposition module when viewed in the transport direction of the above-mentioned device.

13. In paragraph 11, The above process chamber is, An inlet for injecting an inert gas of a predetermined pressure from outside the process chamber into the deposition module; and An outlet for discharging at least a portion of the inert gas, including the inert gas sprayed onto the substrate by the deposition module and the inert gas sprayed onto the substrate by the air curtain module, to the outside of the process chamber, A deposition device characterized in that the flow rate of the inert gas discharged outside the process chamber through the outlet is less than or equal to the flow rate of the inert gas injected from outside the process chamber through the inlet.

14. In paragraph 12, A deposition device characterized in that, when viewed in the transport direction of the above-mentioned device, a first partition wall configured to extend in the vertical direction is provided between the preheating module and the air curtain module, and a second partition wall configured to extend in the vertical direction is provided between the air curtain module and the deposition module.

15. In paragraph 12, The temperature of the inert gas sprayed by the above air curtain module to the above substrate is A deposition device characterized by a heating temperature higher than that of the substrate of the above preheating module.

16. In paragraph 13, The temperature of the inert gas sprayed by the above air curtain module to the above substrate is A deposition device characterized in that the difference between the temperature of the inert gas discharged outside the process chamber through the outlet and the temperature of the inert gas injected from outside the process chamber through the inlet is set to be within a preset value.

17. In paragraph 14, The above air curtain module, A curtain body configured to inject a predetermined flow rate of inert gas onto the substrate within the process chamber, and provided between the first partition wall and the second partition wall when viewed in the transport direction of the substrate; and A deposition device characterized by including a gas guide portion configured to extend downward from at least one of the first bulkhead and the second bulkhead.

18. In paragraph 17, The above gas guide part, A first guide portion configured to extend downward from the first bulkhead; and It includes a second guide portion configured to extend downward from the second bulkhead, The above first guide part and the above second guide part, A deposition device characterized in that it is configured to be inclined toward an area of ​​the substrate corresponding to the deposition module in the transport direction of the substrate.

19. In paragraph 12, The above air curtain module, It includes a curtain body configured to spray a predetermined flow rate of inert gas onto the substrate within the process chamber, On the outer surface of the curtain body, a portion of the curtain body is disposed adjacent to an outlet through which an inert gas is discharged, and an isothermal medium receiving portion is configured to surround at least a portion of the outer surface of the curtain body. The above isothermal medium receiving section is, A deposition device characterized in that it guides the temperature of gas sprayed from the inside of the curtain body by contacting the outer surface of the curtain body so as to be maintained constant.

20. In paragraph 12, The above air curtain module, A curtain body configured to spray a predetermined flow rate of inert gas onto the substrate within the process chamber; An outlet through which an inert gas is discharged from the above curtain body; and A deposition device characterized by including an air curtain opening / closing unit configured to control the degree of opening of the exhaust port according to the degree of temperature change when the substrate is heated by the preheating module.

Images