Perovskite cell, photovoltaic module, photovoltaic system, electrical apparatus, and power generation apparatus
By using a passivation layer of ammonium salt compounds with a specific structure in perovskite solar cells, the problems of insufficient photoelectric conversion efficiency and stability of traditional perovskite solar cells have been solved, achieving higher photoelectric conversion efficiency and longer lifespan.
Patent Information
- Application Number
- PCT/CN2025/090474
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-05-20
- Filing Date
- 2025-04-22
- Publication Date
- 2025-11-20
AI Technical Summary
Traditional perovskite solar cells have limited photoelectric conversion efficiency and stability, making it difficult to meet the requirements of high-end applications.
A passivation layer containing an ammonium salt compound with a specific structure is set between the hole transport layer and the perovskite material layer. The anionic group of the ammonium salt compound contains a carbazole structure, and the cationic group has a specific aromatic group structure. The two work synergistically to improve film formation and reduce energy level difference, thereby enhancing charge extraction capability.
This improved the photoelectric conversion efficiency and stability of perovskite solar cells, and extended their lifespan.
Smart Images

Figure CN2025090474_20112025_PF_FP_ABST
Abstract
Description
Perovskite battery, photovoltaic module, photovoltaic system, power consuming device and power generating device
[0001] Related applications
[0002] The present application claims priority to Chinese Patent Application No. 2024106306743, filed on May 20, 2024, entitled “Perovskite battery, photovoltaic module, photovoltaic system, power consuming device and power generating device”, and Chinese Patent Application No. 2024105991983, filed on May 14, 2024, entitled “Perovskite battery, photovoltaic module, photovoltaic system, power consuming device and power generating device”, the contents of which are hereby incorporated by reference in their entirety. TECHNICAL FIELD
[0003] The present application relates to the technical field of batteries, in particular to a perovskite battery, a photovoltaic module, a photovoltaic system, a power consuming device and a power generating device. BACKGROUND
[0004] Perovskite solar cells have excellent photoelectric properties, high light absorption coefficient, long carrier lifetime and long diffusion length, and many other characteristics, and have become a key direction of next-generation photovoltaic technology research.
[0005] However, the photoelectric conversion efficiency and stability of the solar cell made of the traditional perovskite material layer and the hole transport layer material layer are very limited, thereby reducing the service life, and the performance of the traditional perovskite solar cell is difficult to meet the increasingly high application requirements.
[0006] Therefore, the traditional technology still needs to be improved. SUMMARY
[0007] Therefore, it is necessary to provide a perovskite battery, a photovoltaic module, a photovoltaic system, a power consuming device and a power generating device, which aims to improve the photoelectric conversion efficiency and stability of the perovskite battery.
[0008] The present application is achieved by the following technical solutions.
[0009] In a first aspect, the present application provides a perovskite battery, which comprises a hole transport layer, a passivation layer and a perovskite material layer stacked together; the passivation layer contains an ammonium salt compound;
[0010] In the ammonium salt compound, the anion group comprises a group formed by losing hydrogen from at least one hydroxyl group in at least one oxoacid group in the compound of formula (1), and the cation group comprises a group formed by losing one hydrogen from the amino group in the compound of formula (2):
[0011] Wherein, L1 is selected from any one of alkyl groups substituted with at least one oxyacid group and oxyacid groups, and each R1 and each R2 is independently selected from any one of H, alkyl, alkoxy, aryl groups with 6 to 13 substituted or unsubstituted cyclic atoms, and heteroaryl groups with 5 to 10 substituted or unsubstituted cyclic atoms.
[0012] Ar1 is selected from substituted or unsubstituted aryl groups having 6 to 14 cyclic atoms, and L2 is selected from alkylene groups having 1 to 3 carbon atoms;
[0013] n1 and n2 are each independently selected from any integer from 0 to 4.
[0014] In the above perovskite solar cell, an ammonium salt compound with a specific structure is set in the passivation layer between the hole transport layer and the perovskite. Among the ammonium salt compounds, the anionic group formed by the compound of formula (1) contains a carbazole structure, which itself has hole transport capability. However, the presence of the carbazole group makes the compound prone to forming self-assembled micelles during film formation, which is not conducive to film spreading. After synergistic effect with the cation formed by the compound of formula (2), -NH3 + The presence of the functional groups can disrupt the self-assembly morphology, allowing the ammonium salt compound to be better dispersed during film formation, forming a more uniform film layer. It also reduces the probability of side reactions between the hole transport layer and the perovskite material layer, and can regulate the energy band and improve charge extraction capability. Simultaneously, the cationic group formed by the compound in formula (2) contains a specific aromatic group structure, which can conjugate with the carbazole group in the anionic group, further improving the carrier extraction capability and / or carrier transport capability at the interface. Thus, while reducing the energy level difference between the hole transport layer and the perovskite material layer, it also reduces side reactions between them, improving the photoelectric conversion efficiency and stability of the perovskite battery, thereby increasing its lifetime.
[0015] It can be understood that a molecule of compound (1) contains one or more oxyacid groups. When it contains multiple oxyacid groups, at least one hydroxyl group in at least one oxyacid group loses hydrogen. When M hydroxyl groups in multiple oxyacid groups in a molecule of compound (1) lose hydrogen (M is an integer greater than or equal to 2), then M molecules of compound (2) will each gain one hydrogen, forming M cation groups, which will form a salt with the anion formed by a molecule of compound (1). In other words, in a molecule of ammonium salt compound, the sum of the valence states of the anion formed by compound (1) and the cation formed by compound (2) is 0, that is, the ammonium salt compound is electrically neutral.
[0016] In some embodiments, Ar1is selected from an aromatic group having 6 to 14 ring-forming atoms or an aromatic group having 6 to 14 ring-forming atoms substituted with a substituent selected from F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom.
[0017] The structure of Ar1is regulated to be an aromatic group-containing structure, so as to have strong aromaticity, i.e., to have strong conjugation with the carbazole group in the anion group while reducing steric hindrance and improving film formation quality.
[0018] In some embodiments, Ar1has the following structure:
[0019] Each R3is independently selected from H, F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom, n3 is selected from any integer from 0 to 5, and * represents a connection site.
[0020] It should be noted that: When n3 is selected as 0, it means that there is no substituent on the benzene ring, and the structure is a phenyl group.
[0021] In some embodiments, the ammonium salt compound satisfies one or both of the following (1) and (2):
[0022] (1) L1is selected from an alkyl group having 1 to 5 carbon atoms substituted with at least one oxygen-containing acid group;
[0023] (2) Each R1and each R2are independently selected from H, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and an aromatic group having 6 to 10 ring-forming atoms.
[0024] In some embodiments, the ammonium salt compound includes a compound represented by formula (I):
[0025] wherein, L 11 is selected from an alkylene group having 1 to 5 carbon atoms, A - is a group formed by losing one hydrogen from one hydroxyl group in the oxygen-containing acid group.
[0026] In some embodiments, the oxygen-containing acid group is selected from any one of a phosphonic acid group, a hypophosphorous acid group, a sulfonic acid group, a carboxylic acid group, a boric acid group, or a silicic acid group.
[0027] In some embodiments, the ammonium salt compound comprises at least one of (a)-(e) below:
[0028] L 11 R3 is selected from any one of F, hydroxyl, alkyl having 1-3 carbon atoms, and alkyl having 1-3 carbon atoms substituted with a fluorine atom.
[0029] Optionally, R3 is selected from any one of F, hydroxyl, and alkyl having 1-3 carbon atoms substituted with a fluorine atom.
[0030] The introduction of the substituent with strong electronegativity, i.e., hydroxyl, fluorine atom, or alkyl containing fluorine atom, in the cation group of the ammonium salt compound can further adjust the energy band at the interface and improve the carrier transport performance at the interface. In addition, the introduction of fluorine atom or hydroxyl in the anion group formed by the compound of formula (1) or the cationic moiety with hydrophilicity formed by the compound of formula (2) is more conducive to improving the wettability of the perovskite material precursor solution on the film layer, thereby improving the film layer quality of the formed perovskite material layer and further improving the stability of the battery.
[0031] In some embodiments, the compound of formula (1) comprises one or more of [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] phosphonic acid, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl phosphonic acid, [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl] phosphonic acid, [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] carboxylic acid, and [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] sulfonic acid; and the compound of formula (2) comprises one or more of m-fluorobenzylamine, p-fluorobenzylamine, o-fluorobenzylamine, m-fluorophenethylamine, p-fluorophenethylamine, o-fluorophenethylamine, m-fluorophenylpropylamine, p-fluorophenylpropylamine, o-fluorophenylpropylamine, m-trifluoromethylphenethylamine, p-trifluoromethylphenethylamine, o-trifluoromethylphenethylamine, p-methylphenethylamine, m-methylphenethylamine, o-methylphenethylamine, p-hydroxyphenethylamine, m-hydroxyphenethylamine, and o-hydroxyphenethylamine.
[0032] The ammonium salt compound formed by the compound of formula (1) and the compound of formula (2) can be better dispersed in the film formation process, forming a more uniform film layer, and playing a role in adjusting the energy band and improving the charge extraction capability. In addition, the ammonium salt compound can reduce the energy level difference between the hole transport layer and the perovskite material layer while reducing the side reaction between the hole transport layer and the perovskite material layer, which can improve the photoelectric conversion efficiency and stability of the perovskite battery, thereby improving the service life of the perovskite battery.
[0033] In some embodiments, the hole transport layer comprises at least one of an inorganic hole transport material and an organic hole transport material.
[0034] In some embodiments, the hole transport layer comprises nickel oxide.
[0035] In some embodiments, the hole transport layer comprises nickel oxide. 3+ In some embodiments, the hole transport layer comprises nickel oxide. 4+ In some embodiments, the hole transport layer comprises nickel oxide.
[0036] In some embodiments, the passivation layer satisfies one or both of the following conditions (1) and (2):
[0037] (1) One side surface of the passivation layer is in direct contact with the perovskite material layer, and the other side surface is in direct contact with the hole transport layer;
[0038] (2) The thickness of the passivation layer is 0.1 nm to 5 nm.
[0039] In some embodiments, the perovskite solar cell further comprises an electron transport layer, a first electrode and a second electrode, the first electrode is arranged on the side of the hole transport layer away from the perovskite material layer, the second electrode is arranged on the side of the perovskite material layer away from the hole transport layer, and the electron transport layer is arranged between the second electrode and the perovskite material layer.
[0040] The electron transport layer can enhance the extraction and transmission efficiency of electrons, further improving the conversion efficiency of the perovskite solar cell.
[0041] In some embodiments, the perovskite solar cell further comprises a hole blocking layer, the hole blocking layer is arranged between the electron transport layer and the second electrode.
[0042] The hole blocking layer can block the passage of holes, significantly improve the electron collection rate at the interface, and thus reduce the probability of electron and hole recombination at the interface.
[0043] In some embodiments, the perovskite solar cell satisfies one or more of the following conditions:
[0044] (1) The thickness of the hole transport layer is 20 nm to 100 nm;
[0045] (2) The thickness of the perovskite material layer is 500 nm to 800 nm.
[0046] (3) the thickness of the electron transport layer is 20-30 nm;
[0047] (4) the thickness of the hole blocking layer is 5-10 nm.
[0048] In a second aspect of the present application, a preparation method of the perovskite cell of the first aspect is provided, comprising the following steps:
[0049] sequentially forming the hole transport layer and the perovskite material layer arranged in a stack; and before the step of forming the perovskite material layer, further comprising the following steps:
[0050] forming the passivation layer on the surface of the hole transport layer by using a preparation raw material comprising the ammonium salt compound.
[0051] In a third aspect of the present application, a photovoltaic module is provided, comprising the perovskite cell of the first aspect.
[0052] In a fourth aspect of the present application, a photovoltaic system is provided, comprising the photovoltaic module of the third aspect.
[0053] In a fifth aspect of the present application, an electric device is provided, comprising the perovskite cell of the first aspect or the photovoltaic module of the third aspect.
[0054] In a sixth aspect of the present application, a power generation device is provided, comprising the perovskite cell of the first aspect or the photovoltaic module of the third aspect. BRIEF DESCRIPTION OF DRAWINGS
[0055] In order to more clearly illustrate the technical solutions of the present application, the drawings used in the present application will be briefly introduced as follows. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of the drawings.
[0056] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are for purposes of illustration only and are not intended to limit the present application thereto. Moreover, the use of the same reference numbers in different drawings indicates similar or identical components. In the drawings:
[0057] FIG. 1 is a schematic diagram of a perovskite cell according to an embodiment of the present application.
[0058] Legend of reference numbers: 10, perovskite cell; 11, first electrode; 12, hole transport layer; 13, passivation layer; 14, perovskite material layer; 15, electron transport layer; 16, hole blocking layer; 17, second electrode. DETAILED DESCRIPTION
[0059] The embodiments of the present application will be described in detail below with reference to the drawings. The following examples are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot be used to limit the protection scope of the present application.
[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application; the terms "comprising," "comprises" and "including" as used herein are synonymous with and meant to have the same meaning as the term "including"; the term "coupled" as used herein means the joining of two members together with one or more intervening members.
[0061] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.
[0062] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily independent or alternative embodiments to each other. The skilled person in the art explicitly and implicitly understands that the embodiments described herein can be combined with other embodiments.
[0063] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.
[0064] In the description of the embodiments of the present application, the term "a plurality of" refers to two or more (including two), and similarly, "a plurality of groups" refers to two or more groups (including two groups), and "a plurality of pieces" refers to two or more pieces (including two pieces).
[0065] In the description of the embodiments of the present application, the orientations or positional relationships indicated by the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like are based on the orientations or positional relationships shown in the drawings, and are merely for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the embodiments of the present application.
[0066] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mounting", "connecting", "connecting", "fixing", and the like should be understood broadly, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium, or can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.
[0067] In the present application, the term "alkyl" refers to a group formed after an alkane loses one hydrogen, for example, a methyl group formed after a methane loses one hydrogen; the term "alkylidene or alkylene" refers to a group formed after an alkane loses two hydrogens, for example, a methylene group formed after a methane loses two hydrogens.
[0068] "Aryl" refers to a hydrocarbon group with aromaticity, including monocyclic aryl and fused ring aryl. Fused ring aryl refers to a group formed by connecting two or more single aromatic rings through two adjacent ring atoms, i.e., a fused ring. Further: the π electrons of the aromatic group should satisfy 4n+2 (Hückel's rule).
[0069] "Heteroaryl" refers to a group with aromaticity in which at least one ring-forming atom is a heteroatom. Heteroatoms include but are not limited to N, P, O, S.
[0070] In the present application, "the number of ring-forming atoms" refers to the number of atoms bonded to form a ring. When the ring is substituted by a substituent, the atoms included in the substituent are not included in the ring-forming atoms. The same applies to "the number of ring atoms" described below, unless otherwise specified, for example, the number of ring atoms of a benzene ring is 6, the number of ring atoms of a naphthalene ring is 10, and the number of ring atoms of a thiophene is 5.
[0071] In the present application, "substituted or unsubstituted" means that the defined group can be substituted or unsubstituted. When the defined group is substituted, it is understood to be optionally substituted with an acceptable group in the art, including but not limited to: C1-10 alkyl, any one or more of halogens in combination; when in multiple combinations, the groups can be connected by a single bond; and when the defined group is substituted by a substituent, for example, an alkyl group with 1-5 carbon atoms, wherein the number of carbon atoms does not include the carbon atoms in the substituent.
[0072] In the present application, when the connection site in the group is not specified, it means that the optional connection site in the group can be connected as the connection site.
[0073] In the present application, the single bond connecting the substituent group throughout the corresponding ring means that the substituent group can be connected to any optional position of the ring, for example In the present application, the single bond connecting the substituent group throughout the corresponding ring means that the substituent group can be connected to any optional position of the ring, for example In the present application, the single bond connecting the substituent group throughout the corresponding ring means that the substituent group can be connected to any optional position of the ring, for example
[0074] In the present application, unless otherwise specified, the preparation steps can be carried out at room temperature. "Room temperature" generally refers to 4-30°C, and further refers to 20±5°C.
[0075] The energy level difference between the traditional perovskite material layer and the hole transport layer material layer is too large, which leads to poor contact, or the material itself is unstable and has too many defects, all of which will reduce the photoelectric conversion efficiency and stability of the solar cell, thereby reducing its service life. Especially when nickel oxide is used as a hole transport material, although nickel oxide is considered to be a semiconductor material with a wide band gap and good electrical conductivity, it is an ideal material for the hole transport layer and can efficiently transport holes. However, the energy level difference between the traditional perovskite material layer and nickel oxide is too large, and the high-valence nickel ions Ni 3+ , Ni 4+ , etc. present in nickel oxide are prone to side reactions with perovskite materials, accelerating the degradation of perovskite materials, which greatly limits the stability of perovskite batteries.
[0076] In the conventional technology, organic self-assembled molecules with oxygen-containing acid groups are often used to modify the hole transport layer to adjust its energy level. However, studies have found that the film-forming effect of traditional organic self-assembled molecules with oxygen-containing acid groups is poor, limiting their role in adjusting the energy band and improving the charge extraction capability. In the conventional technology, the focus is on regulating the backbone structure of the self-assembled molecules connected to the oxygen-containing acid group in order to try to improve its role in adjusting the energy band and improving the charge extraction capability, but the improvement is limited.
[0077] Through extensive experimental research, the technical solution described in this application, which can improve the photoelectric conversion efficiency and stability of perovskite solar cells, has been obtained.
[0078] One embodiment of this application provides a perovskite solar cell, which includes a hole transport layer, a passivation layer and a perovskite material layer stacked together; the passivation layer contains an ammonium salt compound.
[0079] In ammonium salt compounds, the anionic group includes the group formed after at least one hydroxyl group in at least one oxyacid group of the compound of formula (1) loses hydrogen, and the cationic group includes the group formed after the amino group in the compound of formula (2) gains a hydrogen atom:
[0080] Wherein, L1 is selected from any one of alkyl groups substituted with at least one oxyacid group and oxyacid groups, and each R1 and each R2 is independently selected from any one of H, alkyl, alkoxy, aryl groups with 6 to 13 substituted or unsubstituted cyclic atoms, and heteroaryl groups with 5 to 10 substituted or unsubstituted cyclic atoms.
[0081] Ar1 is selected from substituted or unsubstituted aryl groups having 6 to 14 cyclic atoms, and L2 is selected from alkylene groups having 1 to 3 carbon atoms;
[0082] n1 and n2 are each independently selected from any integer from 0 to 4.
[0083] In the above perovskite solar cell, an ammonium salt compound with a specific structure is set in the passivation layer between the hole transport layer and the perovskite. Among the ammonium salt compounds, the anionic group formed by the compound of formula (1) contains a carbazole structure, which itself has hole transport capability. However, the presence of the carbazole group makes the compound prone to forming self-assembled micelles during film formation, which is not conducive to film spreading. After synergistic effect with the cation formed by the compound of formula (2), -NH3 + The presence of the functional groups can disrupt the self-assembly morphology, allowing the ammonium salt compound to be better dispersed during film formation, forming a more uniform film layer. It also reduces the probability of side reactions between the hole transport layer and the perovskite material layer, and can regulate the energy band and improve charge extraction capability. Simultaneously, the cationic group formed by the compound in formula (2) contains a specific aromatic group structure, which can conjugate with the carbazole group in the anionic group, further improving the carrier extraction capability and / or carrier transport capability at the interface. Thus, while reducing the energy level difference between the hole transport layer and the perovskite material layer, it also reduces side reactions between them, improving the photoelectric conversion efficiency and stability of the perovskite battery, thereby increasing its lifetime.
[0084] It is understood that one molecule of the compound of formula (1) contains one or more oxygen-containing acid groups, and when it contains multiple oxygen-containing acid groups, at least one hydroxyl group in at least one of the oxygen-containing acid groups loses hydrogen. When M hydroxyl groups in the multiple oxygen-containing acid groups lose hydrogen (M is an integer greater than or equal to 2), M molecules of the compound of formula (2) each obtain one hydrogen to form M cationic groups, which form a salt with the anion of one molecule of the compound of formula (1). In other words, in one molecule of the ammonium salt compound, the valence state of the anion of the compound of formula (1) and the cation of the compound of formula (2) is 0, i.e. the ammonium salt compound is electrically neutral.
[0085] In some embodiments, Ar1 is selected from an aromatic group having 6 to 14 ring-forming atoms or an aromatic group having 6 to 14 ring-forming atoms substituted with a substituent selected from any one of F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom.
[0086] The structure of Ar1 is adjusted to be an aromatic group-containing structure, so as to have strong aromaticity, i.e. to have strong conjugation with the carbazole group in the anion group while reducing steric hindrance and improving film forming quality.
[0087] In some embodiments, the substituent includes any one of F, a hydroxyl group, a methyl group, a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, an ethyl group, a propyl group, a methoxy group, an ethoxy group, and a propoxy group.
[0088] The number of ring atoms is 6, 7, 8, 9, 10, 11, 12, 13, or 14.
[0089] In some embodiments, Ar1 is selected from an aromatic group having 6 to 10 ring-forming atoms or an aromatic group having 6 to 10 ring-forming atoms substituted with a substituent.
[0090] In some embodiments, Ar1 has the following structure:
[0091] Each R3 is independently selected from any one of H, F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom, n3 is selected from any integer from 0 to 5, and * represents a connection site.
[0092] In some embodiments, each R3 is independently selected from any one of H, F, a hydroxyl group, a methyl group, a monofluoromethyl group, a difluoromethyl group, a trifluoromethyl group, an ethyl group, a propyl group, a methoxy group, an ethoxy group, and a propoxy group.
[0093] In some embodiments, Ar1 has a structure as shown in any of the following structures:
[0094] In some embodiments, L1 is selected from an alkyl group having a carbon number of 1 to 5, which is substituted with at least one oxygen acid group.
[0095] In the above "1 to 5", the values include the minimum value and the maximum value of the range, and every value between such minimum value and maximum value, and specific examples include, but are not limited to, the following point values in the embodiments: 1, 2, 3, 4, or 5.
[0096] In some embodiments, L1 is selected from an alkyl group having a carbon number of 1 to 4, which is substituted with at least one oxygen acid group.
[0097] The length of the L1 alkyl chain is further regulated, which improves the carrier extraction performance while reducing steric hindrance effect and improving film quality.
[0098] In some embodiments, L1 has a structure as shown in any of the following structures: - A-L 11 - * , wherein L 11 is selected from an alkylene group having a carbon number of 1 to 5, A - is a group formed by losing a hydrogen from one hydroxyl group in the oxygen acid group, and * represents a connection site.
[0099] In some embodiments, the oxygen acid group is selected from any of a phosphonic acid group, a hypophosphorous acid group, a sulfonic acid group, a carboxylic acid group, a boric acid group, or a silicic acid group; and the structure of the group formed by losing a hydrogen from one hydroxyl group in the oxygen acid group is as shown in any of the following structures:
[0100] In some embodiments, each R1 and each R2 is independently selected from H, an alkyl group having a carbon number of 1 to 5, an alkoxy group having a carbon number of 1 to 5, and an aryl group having a ring-forming atom number of 6 to 10.
[0101] In some embodiments, each R1 and each R2 are the same or different.
[0102] In some embodiments, each R1 and each R2 is independently selected from H, an alkyl group having a carbon number of 1 to 3, an alkoxy group having a carbon number of 1 to 3, and an aryl group having a ring-forming atom number of 6 to 8.
[0103] In some embodiments, each R1 and each R2 is independently selected from any of H, a methyl group, an ethyl group, a propyl group, a methoxy group, an ethoxy group, and a phenyl group.
[0104] In some embodiments, the ammonium salt compound comprises a compound represented by formula (I):
[0105] In some embodiments, L 11 is selected from any one of a methylene group, an ethylene group, a propylene group, and a butylene group.
[0106] In some embodiments, L 11 is selected from any one of a methylene group, an ethylene group, a propylene group, and a butylene group.
[0107] In some embodiments, the oxygen-containing acid group is selected from any one of a phosphonic acid group, a hypophosphorous acid group, a sulfonic acid group, and a carboxylic acid group.
[0108] The type of the acid group containing a salt can be further adjusted to improve the stability of the perovskite battery.
[0109] In some embodiments, the ammonium salt compound comprises at least one of (a) to (e) below:
[0110] R3is selected from any one of H, F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, and an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom.
[0111] Optionally, R3is selected from any one of a hydroxyl group, F, and an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom.
[0112] In some embodiments, R3is selected from any one of F, a monofluoromethyl group, a difluoromethyl group, and a trifluoromethyl group.
[0113] Introducing a substituent with strong electronegativity, such as a hydroxyl group, a fluorine atom, or an alkyl group containing a fluorine atom, in the cationic group of the ammonium salt compound can further adjust the energy band at the interface and improve the carrier transport performance at the interface. In comparison with introducing a fluorine atom or a hydroxyl group in the anionic group formed by the compound of formula (1), introducing a fluorine atom or a hydroxyl group in the cationic part having hydrophilicity formed by the compound of formula (2) is more conducive to improving the wettability of the perovskite material precursor solution on the film layer, thereby improving the film layer quality of the formed perovskite material layer and further improving the stability of the battery.
[0114] In some embodiments, the hole transport layer comprises at least one of an inorganic hole transport material and an organic hole transport material.
[0115] The inorganic hole transport material and the organic hole transport material can be any of the hole transport materials commonly used in the art, including but not limited to at least one of nickel oxide, zinc oxide, molybdenum oxide, 2,2',7,7'-tetra(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and derivatives thereof.
[0116] In some embodiments, the hole transport layer includes nickel oxide.
[0117] In the present application, the oxygen-containing acid group is allowed to form an ammonium salt, and the structure of the cationic moiety is regulated, which, when modifying the hole transport layer containing nickel oxide, can block the side reaction of high-valence nickel ions (Ni 3+ , Ni 4+ , etc.) with perovskite, improve the film-forming ability of the ammonium salt compound, reduce the energy level difference between the perovskite material layer, and further improve the carrier extraction and / or carrier transport capacity of the interface, effectively improving the photoelectric conversion efficiency and stability of the perovskite battery.
[0118] In some embodiments, one side surface of the passivation layer is in direct contact with the perovskite material layer. Further, the other side surface of the passivation layer is in direct contact with the hole transport layer.
[0119] In some embodiments, the thickness of the passivation layer is 0.1 nanometer (nm) to 5 nm; optionally 0.1 nm, 0.2 nm, 0.3 nm, 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm; or a range formed by any two numerical values.
[0120] It should be noted that the thickness of the passivation layer can be the same or different at different locations of the same passivation layer, and the thickness of the passivation layer described above is the average thickness.
[0121] In some embodiments, the thickness of the hole transport layer is 20 nm to 100 nm; optionally 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm; or a range formed by any two numerical values.
[0122] It can be understood that, during the preparation process, the type of ammonium salt compound in the passivation layer can be inferred from the raw materials used, and at the same time, the passivation layer in the finished battery product can also be detected in reverse:
[0123] By disassembling the battery, exposing the passivation layer, and then using SEM-EDS electron characterization means for the passivation layer interface, the presence of specific elements containing oxygen acid functional groups (such as phosphorus, sulfur, boron, etc.) can be detected; and using an FTIR infrared spectrometer, the types of functional groups of its substituents (R1, R2, etc.) can be determined; at the same time, the passivation layer is dissolved, and NMR is used for testing to obtain a hydrogen spectrum, which can be analyzed to determine the structure of the ammonium salt compound carbon-hydrogen skeleton and the carbon chain length of the linking group (L2, L 11 According to the area integral value of the characteristic peak in the hydrogen spectrum, the molar ratio of each characteristic functional group of the ammonium salt compound can be further analyzed, and the structure of the substance contained in the passivation layer can be obtained.
[0124] It should be noted that the above is only an example of reverse testing, and other known and feasible testing and analysis methods in the art can also be used.
[0125] The perovskite material in the perovskite material layer described above can be various perovskite materials under normal pressure in the art. In some embodiments, the chemical formula of the perovskite material satisfies ABX`3 or A2CDX`6; wherein A is an inorganic cation or an organic cation or a mixture of the two, which can be at least one of formamidinium ion (FA + ), methylammonium ion (MA + ) and Cs + ; B is an inorganic metal cation, which can be at least one of Pb 2+ ion, Sn 2+ ion; C is a monovalent metal cation, commonly Ag + ; D is a trivalent metal cation, which can be at least one of bismuth cation Bi 3+ , antimony cation Sb 3+ , and indium cation In 3+ ; X` is oxygen or halogen or pseudo-halogen element, which can be at least one of Cl - , Br - and I - .
[0126] In some embodiments, the thickness of the perovskite material layer is 500nm-800nm; optionally 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm; or a range composed of any two numerical values.
[0127] In some embodiments, the perovskite battery described above further comprises an electron transport layer, a first electrode and a second electrode, the first electrode is arranged on the side of the hole transport layer away from the perovskite material layer, the second electrode is arranged on the side of the perovskite material layer away from the hole transport layer, and the electron transport layer is arranged between the second electrode and the perovskite material layer.
[0128] The electron transport layer can enhance the extraction and transport efficiency of electrons, further improving the conversion efficiency of the perovskite cell.
[0129] In some embodiments, the electron transport layer has a thickness of 20-30 nm. Optionally, the thickness is 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, or 30 nm, or a range defined by any two of the values.
[0130] In some embodiments, the electron transport layer comprises at least one of the following electron transport materials commonly used in the art: [6,6]-phenyl-C61-butyric acid methyl ester (PC 61 BM), [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM), fullerene C60 (C 60 ), fullerene C70 (C 70 ), tin oxide, zinc oxide (ZnO), and the like.
[0131] In some embodiments, the perovskite cell further comprises a hole blocking layer disposed between the electron transport layer and the second electrode.
[0132] The hole blocking layer can block the passage of holes, significantly improving the electron collection rate at the interface, thereby reducing the probability of electron-hole recombination at the interface.
[0133] In some embodiments, the hole blocking layer has a thickness of 5-10 nm. Optionally, the thickness is 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm, or a range defined by any two of the values.
[0134] The hole blocking layer can be made of a hole blocking material commonly used in the art, non-limiting examples of which include at least one of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tin oxide.
[0135] In some embodiments, the first electrode and the second electrode can be made of various electrode materials commonly used in the art, including at least one of a transparent conductive oxide and a conductive metal, specifically at least one of fluorine-doped tin dioxide (FTO), tin-doped indium oxide (ITO), boron-doped zinc oxide (BZO), aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), Ag, Cu, C, Au, and Al.
[0136] In some embodiments, referring to FIG. 1, a perovskite cell 10 includes a first electrode 11, a hole transport layer 12, a passivation layer 13, a perovskite material layer 14, an electron transport layer 15, a hole blocking layer 16, and a second electrode 17, which are sequentially stacked.
[0137] In some embodiments, the perovskite cell 10 can be a normal perovskite cell (n-i-p planar structure) or an inverted perovskite cell (p-i-n planar structure).
[0138] In some embodiments, the thickness of the second electrode is 80-110 nm.
[0139] It should be noted that when the first electrode 11 is a transparent electrode, i.e., the side of the first electrode 11 is the light incident side, the perovskite cell 10 is an inverted perovskite cell, and vice versa when the second electrode 17 is a transparent electrode, i.e., the side of the second electrode is the light incident side, the perovskite cell 10 is a normal perovskite cell.
[0140] In some embodiments, the first electrode 11 is a transparent conductive electrode, and the perovskite cell is an inverted perovskite cell.
[0141] In some embodiments, the perovskite cell further includes a substrate disposed on the side of the transparent conductive electrode away from the other electrode. The substrate structure can be a rigid material or a flexible material. In some embodiments, the substrate structure can be transparent glass. The material of the substrate structure can be specifically set as required, and is not limited in the present application.
[0142] An embodiment of the present application further provides a preparation method of the perovskite cell, including the following step S10.
[0143] Step S10: sequentially forming a hole transport layer and a perovskite material layer in a stacked manner. Before the step of forming the perovskite material layer, the following steps are further included:
[0144] A passivation layer is formed on the surface of the hole transport layer by using a preparation raw material including an ammonium salt compound.
[0145] Specifically, the passivation layer can be formed by first forming an ammonium salt compound through a salt reaction of a compound of formula (1) and a compound of formula (2), then using the ammonium salt compound to prepare a solution and coating the solution on the surface of the hole transport layer; or directly mixing the preparation raw material including the compound of formula (1) and the compound of formula (2), coating the mixture on the surface of the hole transport layer, and directly forming a salt and a passivation layer on the surface of the hole transport layer during the drying process.
[0146] Specifically, the preparation raw materials including the compound of formula (1) and the compound of formula (2) are mixed and coated on the surface of the hole transport layer, and annealing treatment is performed to form a passivation layer.
[0147] In some embodiments, the mixing step is performed in a solvent; further, the solvent includes a small molecule alcohol solvent, which can be at least one of isopropyl alcohol, propanol and ethanol.
[0148] In some embodiments, the preparation raw materials including the compound of formula (1) and the compound of formula (2) are mixed in a solvent to form a mixed solvent; further, the total mass concentration of the compound of formula (1) and the compound of formula (2) in the mixed solvent is 0.5 mg / mL to 2 mg / mL.
[0149] In some embodiments, the mass ratio of the compound of formula (1) to the compound of formula (2) is 1:(0.1-10).
[0150] Optionally, the annealing temperature is 100°C to 150°C, and the time is 5 min to 20 min.
[0151] The structures and specific selection of the compound of formula (1) and the compound of formula (2) are the same as shown above, and will not be repeated here.
[0152] In some specific embodiments, the compound of formula (1) includes at least one of MeO-4PACz ([4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] phosphonic acid), MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl] phosphonic acid, MeO-3PACz ([3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl] phosphonic acid, MeO-4CACz ([4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] carboxylic acid) and MeO-4SACz ([4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] sulfonic acid). The specific structures are as follows:
[0153] The above-mentioned compound of formula (1) can be obtained by purchase or synthesized according to the synthesis literature in the art (for example, DOI:10.1126 / science.abd4016), which will not be repeated here.
[0154] In some embodiments, the compound of formula (2) includes at least one of PEAI (phenethylamine), mF-PEAI (meta-fluorophenethylamine), pF-PEAI (para-fluorophenethylamine), oF-PEAI (ortho-fluorophenethylamine), mF-PMAI (meta-fluorophenylmethylamine), pF-PMAI (para-fluorophenylmethylamine), oF-PMAI (ortho-fluorophenylmethylamine), meta-fluorophenylpropylamine, para-fluorophenylpropylamine, ortho-fluorophenylpropylamine, mOH-PEAI (meta-hydroxyphenethylamine), pOH-PEAI (para-hydroxyphenethylamine), oOH-PEAI (ortho-hydroxyphenethylamine), mMe-PEAI (meta-methylphenethylamine), pMe-PEAI (para-methylphenethylamine), oMe-PEAI (ortho-methylphenethylamine), oCF-PEAI (ortho-trifluoromethylphenethylamine), mCF-PEAI (meta-trifluoromethylphenethylamine), and pCF-PEAI (para-trifluoromethylphenethylamine).
[0155] It can be understood that the other functional layers of the perovskite cell described above can be prepared by conventional preparation methods in the art, for example, the preparation processes of the hole transport layer, the electron transport layer, the hole blocking layer, etc. described above can use conventional preparation methods in the art, including any one of solution method and solid deposition method, the solution method including any one of spin coating, spraying, blade coating and slot coating, etc., and the solid deposition method including any one of vacuum evaporation, sputtering deposition, plasma deposition and ion deposition.
[0156] The perovskite material layer described above can be obtained by conventional preparation methods in the art, for example, an anti-solvent method; the specific steps are as follows:
[0157] The perovskite material layer is prepared by spin coating a perovskite precursor solution on the surface of the substrate, using an anti-solvent method to wash the film, and then performing annealing treatment.
[0158] Optionally, the temperature of the annealing treatment is 100 degrees Celsius (℃) to 150℃, and the time is 10 minutes (min) to 30 min. The solvent in the perovskite precursor solution can be selected from one or more of N,N-dimethylformamide, dimethyl sulfoxide, N-methyl pyrrolidone and 2-methoxyethanol, and the concentration is 1.0 mole / liter (mol / L) to 2.0 mol / L.
[0159] The anti-solvent can be selected from at least one of chlorobenzene, anisole and diethyl ether.
[0160] An embodiment of the present application also provides a photovoltaic module, which includes the perovskite cell described above.
[0161] The perovskite cell described above has high light conversion efficiency and good stability, which can improve the efficiency of the photovoltaic module.
[0162] The photovoltaic module includes one or more perovskite cells, which can be selected according to specific application scenarios; further, the photovoltaic module includes a plurality of perovskite cells, which are connected in series or in parallel to form a cell piece.
[0163] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer, and a back plate.
[0164] The two surfaces of the cell piece are respectively provided with an adhesive layer, the surface away from the cell piece in one of the adhesive layers is provided with a back plate, and the surface away from the cell piece in the other adhesive layer is provided with a photovoltaic glass layer.
[0165] The photovoltaic glass layer and the back plate are used to protect the perovskite cell, and are sealed, insulated, and waterproof; the adhesive layer serves to bond the photovoltaic glass layer and the cell piece and bond the back plate and the cell piece.
[0166] Optionally, the material of the photovoltaic glass layer is tempered glass, the material of the back plate is TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the material of the adhesive layer is EVA (polyethylene-polyvinyl acetate copolymer).
[0167] Further, the photovoltaic module further includes a junction box and an outer frame.
[0168] The junction box is used to protect the power generation system of the entire photovoltaic module, and it is equivalent to a current transfer station. When a short circuit occurs in a cell piece, the junction box will automatically disconnect the short-circuited cell string.
[0169] The outer frame can serve to support and protect the entire photovoltaic module, and the frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.
[0170] Further, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone. The photovoltaic module can convert solar energy into electrical energy, which can be stored in a storage battery or used to drive a load.
[0171] In some embodiments, the photovoltaic module is a solar cell panel.
[0172] An embodiment of the present application also provides a photovoltaic system including the photovoltaic module.
[0173] The photovoltaic system utilizes the photovoltaic effect of the perovskite cell in the photovoltaic module to directly convert solar radiation energy into electrical energy, which has high efficiency; further, the photovoltaic system is a photovoltaic power generation system.
[0174] The photovoltaic module is a core part of the photovoltaic power generation system. The photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios. Further, when the photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.
[0175] The photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.
[0176] The independent photovoltaic power generation system includes a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), a load, and the like. The working principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, and then the electrical energy is converted by the power electronic converter to supply power to the load. At the same time, the excess electrical energy is stored in the energy storage device in the form of chemical energy through the charge controller. In this way, when the sunlight is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electrical energy through the power electronic inverter, filtering, and power transformer to supply the AC load.
[0177] The grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. The working principle is that the solar radiation energy is converted by the photovoltaic array, and then converted into high-voltage direct current through the high-frequency DC / DC boost circuit. Then, the high-voltage direct current is inverted by the power electronic inverter to output a sinusoidal alternating current with the same frequency and voltage as the grid voltage.
[0178] The two photovoltaic power generation systems have different characteristics and can be selected according to specific application scenarios.
[0179] In an embodiment of the present application, a power utilization device is also provided, which includes at least one of the perovskite battery and the photovoltaic module.
[0180] The power utilization device can be, but is not limited to, a mobile device, an electric vehicle, an electric train, a ship and a satellite, an energy storage system, and the like.
[0181] In some embodiments, the mobile device can be a mobile phone, a notebook computer, or the like.
[0182] In some embodiments, the electric vehicle includes, but is not limited to, a pure electric vehicle, a hybrid electric vehicle, a plug-in hybrid electric vehicle, an electric bicycle, an electric scooter, an electric golf cart, an electric truck, and the like.
[0183] In another embodiment of the present application, a power generation device is also provided, which includes the perovskite battery or the photovoltaic module.
[0184] The power generation device can be, but is not limited to, a solar power generator, and the like.
[0185] The application will be described below with reference to specific examples, but the application is not limited to the following examples, and it should be understood that the appended claims define the scope of the application, and those skilled in the art should realize that certain changes to the embodiments of the application will be covered by the spirit and scope of the claims of the application.
[0186] The following are specific examples.
[0187] Example 1
[0188] (1) Preparation of perovskite battery, the specific steps are as follows:
[0189] 1. Expose the FTO conductive glass to the glass substrate, then clean it with surfactant, deionized water and ethanol in turn, then dry the solvent under a nitrogen gun, irradiate it in an ultraviolet ozone machine, and prepare it for use.
[0190] 2. Use a spin coater to spin coat a nickel oxide nanoparticle solution on the FTO glass substrate, and the solution concentration is 10 mg / mL, then place it on a 150°C hot stage for annealing treatment for 15 min, to form a 60 nm thick hole transport layer.
[0191] 3. Weigh the compound of formula (1) (MeO-4PACz) and the compound of formula (2) (mF-PEAI) in a glass bottle according to the mass ratio of 1:1, add isopropyl alcohol solvent to prepare a solution with a concentration of 1 mg / mL, fully stir and dissolve, then filter to obtain a clear solution, then spin coat the clear solution on the surface of the hole transport layer in a nitrogen atmosphere, and then anneal it at 100°C for 10 min to form a passivation layer with an average thickness of about 1 nm, and the thickness is denoted as X.
[0192] 4. Weigh the stoichiometric fractions of methyl iodide FAI, cesium iodide CsI, MAI methyl amine, and lead iodide PbI2 according to the chemical formula FA 0.85 MA 0.1 Cs 0.05 PbI3 in a glass bottle, add a mixed solvent of N,N-dimethylformamide DMF and dimethyl sulfoxide DMSO with a volume ratio of 4:1, fully stir and dissolve, then filter to prepare a precursor solution with a molar concentration of 1.8 mol / L; then spread the perovskite precursor solution on the surface of the passivation layer by static spin coating, use the anti-solvent anisole to wash the film, then anneal it on a hot stage at 110°C for 20 min to form a perovskite material layer with a thickness of 700 nm.
[0193] 5. Use an evaporation equipment to evaporate an electron transport layer (C 60), atomic deposition to obtain a 5nm thick hole blocking layer (tin oxide), and vacuum evaporation to obtain a 100nm thick metal electrode layer (Cu), to obtain a perovskite cell.
[0194] The thickness of each functional layer can be tested using any one of a white light interferometer, a step profiler, an optical / electrical microscope, the thickness of the passivation layer is tested using an electrical microscope, and the average value is obtained by sampling and testing multiple parts of the passivation layer.
[0195] (2) Performance testing, as follows:
[0196] The freshly prepared perovskite cell is tested for photoelectric conversion efficiency to obtain an initial photoelectric conversion efficiency PCE(0), and then placed in an unsealed nitrogen environment, shielded from light and heated at 85°C for 1000h, and then tested for photoelectric conversion efficiency PCE(1000). The efficiency retention rate Y is calculated according to the following formula: Y = PCE(1000) / PCE(0) x 100%
[0197] The specific steps for photoelectric conversion efficiency testing are as follows:
[0198] The test fixture containing the perovskite cell is placed on the sample holder so that it is located in the measurement plane and the cell is located at the center of the sun simulator light spot (or the normal line of the photovoltaic cell is parallel to the center line of the sun simulator light source).
[0199] The sun simulator of the light source is used to test the current-voltage of the cell under standard simulated sunlight (AM1.5G, 100mW / cm 2 ) according to the national standard IEC61215, with FTO as the positive electrode and Cu as the negative electrode, the test voltage from -0.1V to 1.2V, the cell area of 0.075cm 2 , the obtained I-V curve, P out , P in , V mpp , J mpp , V oc , J sc , then the PCE is calculated based on the following formula: PCE = P out / P in ; = V oc x J sc x [(V mpp x J mpp ) / (V oc x J sc )] / P in ; = V oc x J sc x FF / P in ;
[0200] P in , P out , V mpp , J mpp , V oc , J sc , FF respectively represent: incident light power (100 mW / cm 2 ), the working output power of the measured battery, the voltage of the maximum power point of the measured battery, the current of the maximum power point of the measured battery, open circuit voltage, short circuit current, fill factor.
[0201] The specific test results are shown in Table 1.
[0202] Examples 2-4
[0203] Examples 2-4 are basically the same as Example 1, except that in step (1) the preparation of the perovskite battery, the types of compounds of formula (1) and / or formula (2) are different from Example 1, and the specific differences are shown in Table 1.
[0204] The remaining test steps are the same as Example 1, and the specific results are shown in Table 1.
[0205] Examples 5-10
[0206] Examples 5-10 are basically the same as Example 1, except that in step (1) the preparation of the perovskite battery, the types of compounds of formula (1) and / or formula (2) are different from Example 1, and the specific differences are shown in Table 1.
[0207] The remaining test steps are the same as Example 1, and the specific results are shown in Table 1.
[0208] Comparative Example 1
[0209] Comparative Example 1 is basically the same as Example 1, except that in step (1) the preparation of the perovskite battery, no passivation layer is provided.
[0210] The remaining steps are the same as Example 1, and the specific results are shown in Table 1.
[0211] Comparative Example 2
[0212] Comparative Example 2 is basically the same as Example 1, except that in step (1) the preparation of the perovskite battery, the preparation step of the passivation layer is as follows:
[0213] The compound of formula (1) (MeO-4PACz) was placed in a glass bottle, isopropyl alcohol solvent was added to prepare a solution with a concentration of 1 mg / mL, and after being fully stirred and dissolved, a clear solution was obtained. Then, the clear solution was spin-coated on the surface of the hole transport layer in a nitrogen atmosphere, and then annealed at 100°C for 10 min to form a passivation layer with an average thickness of about 1 nm.
[0214] The remaining steps were the same as in Example 1, and the specific results can be seen in Table 1.
[0215] Comparative Examples 3-4
[0216] Comparative Examples 3-4 were basically the same as Example 1, except that the types of the compound of formula (1) and / or the compound of formula (2) were different from Example 1, and the specific differences can be seen in the relevant parameters in Table 1.
[0217] The remaining steps were the same as in Example 1, and the specific results can be seen in Table 1.
[0218] Comparative Examples 5-6
[0219] Comparative Examples 5-6 were basically the same as Comparative Example 2, except that the compound of formula (1) (MeO-4PACz) was replaced by MeO-4CACz or MeO-4SACz, respectively, in Comparative Examples 5-6.
[0220] The remaining steps were the same as in Comparative Example 2, and the specific results can be seen in Table 1.
[0221] The relevant physical parameters and test results in each example and comparative example can be seen in Table 1.
[0222] Table 1 Note: “ / ” represents the absence of the structure or substance.
[0223] wherein “MeO-4PACz” is [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid, “MeO-2PACz” is [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid, “MeO-3PACz” is [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl]phosphonic acid, “MeO-4SACz” is [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]sulfonic acid, “MeO-4CACz” is [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]carboxylic acid, “mF-PEAI” is meta-fluorophenethylamine, “pF-PEAI” is para-fluorophenethylamine, “PEAI” is phenethylamine, “mCF-PEAI” is meta-trifluoromethylphenethylamine, “pMe-PEAI” is para-methylphenethylamine, “pOH-PEAI” is para-hydroxyphenethylamine, “ThEAI” is 2-thiopheneethylamine iodide, and “ThMAI” is 2-thiophenemethylamine iodide.
[0224] Comparative analysis of the test results of Examples 1-10 and Comparative Examples 1-6 in the above table shows that: when the perovskite battery is prepared using the ammonium salt compound with the specific structure of the application, the perovskite light-to-electricity conversion efficiency and its stability can be effectively improved; and when used as a passivation layer material, even if nickel oxide is used as a hole transport layer material, the perovskite battery's light-to-electricity conversion efficiency and its stability can be effectively improved. Further, from Examples 1-3 and Example 4, it can be seen that further regulating the types of substituents on the ring structure in the anion group of the ammonium salt compound can further improve the perovskite battery's light-to-electricity conversion efficiency and its stability.
[0225] Further comparative analysis of the data of Example 1 and Comparative Examples 3-4 shows that the use of the compound of formula (2) containing an aromatic group structure to form the cationic part in the application can improve the perovskite battery's light-to-electricity conversion efficiency and its stability, while the use of a general heteroaromatic group to form the cationic part in Comparative Examples 3-4 does not observe this effect. The reason for this phenomenon may be related to the strength of the aromaticity of the group. The aromaticity of an organic structure is related to the number of π electrons in its conjugated system. The stronger the aromaticity, the more π electrons it contains in the conjugated system, and the stronger the conjugation. Compared with heteroaromatic groups, the aromatic group structure in the cationic group formed by the compound of formula (2) contains more π electrons in the conjugated system, and the conjugation with the carbazole group in the anion group is stronger, thereby further improving the carrier extraction and / or carrier transport capability of the interface.
[0226] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but as long as the combinations of the technical features do not contradict, they should be considered within the scope of the present disclosure.
[0227] The above-described embodiments only express several implementation manners of the application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be noted that for those skilled in the art, without departing from the concept of the application, a number of modifications and improvements can be made, which are within the scope of the application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims, and the description and drawings can be used to explain the content of the claims.
Claims
1. A perovskite cell comprising a hole transport layer, a passivation layer and a perovskite material layer disposed in a stack; The passivation layer contains an ammonium salt compound; In the ammonium salt compound, the anion group includes a group formed by the loss of a hydrogen from at least one of the hydroxyl groups in the at least one oxoacid group in the compound of formula (1), and the cation group includes a group formed by the loss of one hydrogen from the amino group in the compound of formula (2): wherein L1 is selected from the group consisting of an alkyl group substituted with at least one oxygen acid group and any one of the oxygen acid groups, each R1 and each R2 are independently selected from the group consisting of H, an alkyl group, an alkoxy group, a substituted or unsubstituted aromatic group having 6 to 13 ring-forming atoms, and a substituted or unsubstituted heteroaromatic group having 5 to 10 ring-forming atoms; Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 14 ring-forming atoms, and L2 is selected from an alkylene group having 1 to 3 carbon atoms; n1 and n2 are each independently selected from any one of 0 to 4.
2. The perovskite cell of claim 1, wherein, Ar1 is selected from an aromatic group having 6 to 14 ring-forming atoms or an aromatic group having 6 to 14 ring-forming atoms substituted with a substituent, the substituent including any one of F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom.
3. The perovskite cell of claim 1 or 2, wherein, The structure of Ar1 is shown below: Each R3 is independently selected from any one of H, F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom, an alkoxy group having 1 to 3 carbon atoms, and an alkoxy group having 1 to 3 carbon atoms substituted with a fluorine atom, and n3 is selected from any one of 0 to 5, and * represents a connection site.
4. The perovskite cell according to any one of claims 1 to 3, wherein, The ammonium salt compound satisfies one or both of the following (1) and (2): (1) L1 is selected from an alkyl group having 1 to 5 carbon atoms substituted with at least one oxygen acid group; (2) each R1 and each R2 are independently selected from the group consisting of H, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, and an aromatic group having 6 to 10 ring-forming atoms.
5. The perovskite cell according to any one of claims 1 to 4, wherein, The ammonium salt compound includes a compound represented by formula (I): wherein L 11 is an alkylene group having 1 to 5 carbon atoms, A - is a group formed by removal of a hydrogen from one of the hydroxyl groups of the oxygen acid group.
6. The perovskite cell according to any one of claims 1 to 5, wherein, The oxygen acid group is selected from any one of a phosphonic acid group, a phosphinic acid group, a sulfonic acid group, a carboxylic acid group, a boronic acid group, and a silicic acid group.
7. The perovskite cell according to any one of claims 1 to 6, wherein, The ammonium salt compound includes at least one of the following (a) to (e): L 11 R3is selected from any one of an alkylene group having 1 to 5 carbon atoms, H, F, a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, and an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom.
8. The perovskite cell of claim 7, wherein, R3 is selected from any one of F, a hydroxyl group, and an alkyl group having 1 to 3 carbon atoms substituted with a fluorine atom.
9. The perovskite cell of claim 1, wherein, The compound of formula (1) includes one or more of [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethylphosphonic acid, [3-(3,6-dimethoxy-9H-carbazol-9-yl)propyl]phosphonic acid, [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]carboxylic acid, and [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]sulfonic acid; and the compound of formula (2) includes one or more of m-fluorobenzylamine, p-fluorobenzylamine, o-fluorobenzylamine, m-fluorophenethylamine, p-fluorophenethylamine, o-fluorophenethylamine, m-fluorophenylpropylamine, p-fluorophenylpropylamine, o-fluorophenylpropylamine, m-trifluoromethylphenethylamine, p-trifluoromethylphenethylamine, o-trifluoromethylphenethylamine, p-methylphenethylamine, m-methylphenethylamine, o-methylphenethylamine, p-hydroxyphenethylamine, m-hydroxyphenethylamine, and o-hydroxyphenethylamine.
10. The perovskite cell according to any one of claims 1 to 9, wherein, The hole transport layer includes at least one of an inorganic hole transport material and an organic hole transport material.
11. The perovskite cell according to any one of claims 1 to 10, wherein, The hole transport layer includes nickel oxide.
12. The perovskite cell of any one of claims 1-11, wherein, The passivation layer satisfies one or both of the following (1) and (2): (1) one side surface of the passivation layer is in direct contact with the perovskite material layer, and the other side surface is in direct contact with the hole transport layer; (2) the thickness of the passivation layer is 0.1 nm to 5 nm.
13. The perovskite cell of any one of claims 1-12, wherein, The perovskite cell further comprises an electron transport layer, a first electrode and a second electrode, the first electrode is arranged on the side of the hole transport layer away from the perovskite material layer, the second electrode is arranged on the side of the perovskite material layer away from the hole transport layer, and the electron transport layer is arranged between the second electrode and the perovskite material layer.
14. The perovskite cell of claim 13, wherein, The perovskite cell further comprises a hole blocking layer, and the hole blocking layer is arranged between the electron transport layer and the second electrode.
15. The perovskite cell of claim 14, wherein, The perovskite cell satisfies one or more of the following conditions: (1) the thickness of the hole transport layer is 20 nm to 100 nm; (2) the thickness of the perovskite material layer is 500 nm to 800 nm; (3) the thickness of the electron transport layer is 20 nm to 30 nm; (4) the thickness of the hole blocking layer is 5 nm to 10 nm.
16. A method for preparing a perovskite cell, comprising the following steps: forming the hole transport layer and the perovskite material layer arranged in sequence; and before the step of forming the perovskite material layer, further comprising the following step: forming the passivation layer on the surface of the hole transport layer using a preparation raw material comprising an ammonium salt compound; In the ammonium salt compound, the anion group includes a group formed by the loss of a hydrogen from at least one of the hydroxyl groups in the at least one oxoacid group in the compound of formula (1), and the cation group includes a group formed by the loss of one hydrogen from the amino group in the compound of formula (2): wherein, L1 is selected from any one of an alkyl group substituted with at least one oxygen-containing acid group and an oxygen-containing acid group, each R1 and each R2 are each independently selected from any one of H, an alkyl group, an alkoxy group, a substituted or unsubstituted aromatic group having 6 to 13 ring-forming atoms, and a substituted or unsubstituted heteroaromatic group having 5 to 10 ring-forming atoms; Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 14 ring-forming atoms, and L2 is selected from an alkylene group having 1 to 3 carbon atoms; n1 and n2 are each independently selected from any integer from 0 to 4.
17. A photovoltaic module comprising the perovskite cell according to any one of claims 1 to 15.
18. A photovoltaic system comprising the photovoltaic module according to claim 17.
19. An electric device comprising at least one of the perovskite cell according to any one of claims 1 to 15 and the photovoltaic module according to claim 17.
20. A power generation device comprising at least one of the perovskite cell according to any one of claims 1 to 15 and the photovoltaic module according to claim 17.
Citation Information
Patent Citations
Perovskite solar cell and preparation method and application thereof
CN117042473A
Perovskite solar cell and manufacturing method
US20230284520A1
Fullerene derivative and perovskite solar cell
WO2023164877A1
Carbazole salt and derivative thereof, and use thereof in preparation of solar cell
WO2024078144A1