Semiconductor process chamber

Abstract

The present disclosure provides a semiconductor process chamber, comprising a cavity, a shielding member, a retaining ring, a pressing ring assembly, and a supporting assembly. The shielding member is sleeved within the cavity and is grounded by means of the cavity; the retaining ring and the pressing ring assembly are both sleeved within the shielding member; the pressing ring assembly is borne on the shielding member; the retaining ring covers the pressing ring assembly; the retaining ring is borne on the shielding member; and the supporting assembly is used for bearing a wafer. When the supporting assembly moves up to a process position, the supporting assembly holds up the pressing ring assembly, the internal edge of the pressing ring assembly presses and covers the periphery of the wafer, and the pressing ring assembly is insulated from the retaining ring and the shielding member, respectively. The retaining ring of the semiconductor process chamber can shield the pressing ring so as to prevent excessive charges from being accumulated on the pressing ring; and the pressing ring can release charges after a process flow is completed, thereby avoiding sparking between the pressing ring and the wafer.

Description

Semiconductor process chamber TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a semiconductor process chamber. BACKGROUND

[0002] In the process of implementing semiconductor technology, charges will gradually accumulate on the pressure ring. When the potential difference between the pressure ring and the wafer is too large, the pressure ring and the wafer will produce a sparking phenomenon.

[0003] For example, in the process of implementing a physical vapor deposition (PVD) process, a pressure ring is needed to press the outer periphery of the wafer. During the process, most of the charged particles will fall on the pressure ring, and a small part will fall on the wafer. The pressure ring is in a suspended state, and the continuous falling of the charged particles will cause the pressure ring to accumulate charges. When the substrate of the wafer is a material with poor electrical conductivity or the wafer itself has poor electrical conductivity (for example, the wafer is a glass wafer), the charges of the pressure ring and the wafer are difficult to transfer, and the pressure ring will form a very large potential difference with the metal film deposited on the surface of the wafer, thereby easily causing a sparking phenomenon.

[0004] In addition, the deposition of particles on the pressure ring will cause the temperature of the pressure ring to rise. The pressure ring will transfer a limited amount of heat to the surrounding area through heat radiation, and will transfer a large amount of heat through heat conduction in the contact area with the wafer, causing the temperature of the local area of the wafer to be high. This will cause the temperature of the wafer to be uneven, thereby affecting the quality of film formation. SUMMARY

[0005] Embodiments of the present application provide a semiconductor process chamber to solve the problems in the background art.

[0006] The semiconductor process chamber provided by the embodiments of the present application comprises a cavity, a shielding member, a baffle ring, a pressure ring assembly, and a support assembly. The shielding member is sleeved in the cavity and grounded through the cavity. The baffle ring and the pressure ring assembly are both sleeved in the shielding member. The pressure ring assembly is carried on the shielding member. The baffle ring is arranged above the pressure ring assembly. The baffle ring is carried on the shielding member. The support assembly is used to carry a wafer. When the support assembly rises to a process position, the support assembly lifts the pressure ring assembly. The inner side edge of the pressure ring assembly is pressed against the periphery of the wafer. The pressure ring assembly is insulated and separated from the baffle ring and the shielding member, respectively.

[0007] In some embodiments, the compression ring assembly comprises a compression ring and a support ring; the support ring is carried on the shield, and the compression ring is carried on the support ring, a projection of the compression ring on the vertical direction on the stop ring is located inside a projection of the shield on the vertical direction on the stop ring; in the case that the support assembly is raised to the process position, the support assembly lifts the support ring, and an inside edge of the compression ring is clamped to the periphery of the wafer.

[0008] In some embodiments, the shield comprises a first body portion, a first bending portion and a second bending portion connected in sequence; the first body portion and the second bending portion are spaced apart, the second bending portion is sleeved in the first body portion, and the first body portion and the second bending portion both protrude upward relative to the first bending portion; the stop ring comprises a second body portion and a third bending portion connected, the second body portion covers above the compression ring assembly, the third bending portion protrudes downward relative to the second body portion, the third bending portion is arranged between the first body portion and the second bending portion, and an end of the third bending portion facing the first bending portion is carried on the first bending portion.

[0009] In some embodiments, the support ring comprises a third body portion and an outer peripheral portion connected, the outer peripheral portion is arranged outside the third body portion, the outer peripheral portion is clamped between the second bending portion and the second body portion in the vertical direction, the outer peripheral portion is carried on the second bending portion, and the compression ring is carried on the third body portion.

[0010] In some embodiments, the support ring further comprises a protruding portion connected with the third body portion, the protruding portion protrudes downward relative to the third body portion, the protruding portion is sleeved in the second bending portion, and the third bending portion is provided with a gas hole penetrating through the third bending portion along the thickness direction of the third bending portion.

[0011] In some embodiments, the second body portion is provided with a first protruding ring protruding towards the compression ring assembly, the first protruding ring surrounds along the axis of the stop ring; and / or, the compression ring is provided with a second protruding ring protruding towards the second body portion, the second protruding ring surrounds along the axis of the compression ring.

[0012] In some embodiments, the support assembly comprises a base and a positioning ring, the base is provided with a carrying area, the positioning ring is sleeved outside the carrying area, an upward side of the positioning ring is provided with a first positioning column, the support ring is provided with a first positioning hole opposite to the first positioning column, and the compression ring is provided with a second positioning hole opposite to the first positioning column; in the case that the support assembly is raised to the process position, the first positioning column is inserted into the first positioning hole and the second positioning hole.

[0013] In some embodiments, the semiconductor processing chamber further comprises insulating pillars disposed on a side of the compression ring assembly facing the baffle ring, the compression ring assembly lifts the baffle ring via the insulating pillars to insulate the baffle ring from the shield when the support assembly is raised to the processing position.

[0014] In some embodiments, a side of the baffle ring facing the compression ring assembly is provided with a docking hole and at least three positioning waist round holes, the positioning waist round holes are distributed circumferentially around an axis of the baffle ring, a long axis of the positioning waist round holes extends along a radial direction of the baffle ring, a number of the insulating pillars is equal to a number of the docking holes, the semiconductor processing chamber further comprises a plurality of insulating positioning columns, a number of the insulating positioning columns is equal to a number of the positioning waist round holes; when the support assembly is raised to the processing position, the insulating pillars are inserted into the docking holes one by one and supported by the docking holes, and the insulating positioning columns are inserted into the positioning waist round holes one by one and positioned by sidewalls of the positioning waist round holes.

[0015] In some embodiments, the semiconductor processing chamber further comprises a support disposed on a side of the baffle ring facing the shield, the baffle ring is connected to the shield via the support, and the baffle ring is grounded via the support, the shield, and the cavity in sequence.

[0016] In some embodiments, the compression ring assembly is provided with a first through hole penetrating the compression ring assembly along a vertical direction, a peripheral part of the first through hole is used for pressing the wafer; the baffle ring is provided with a second through hole penetrating the baffle ring along a vertical direction, a projection of an inner wall of the second through hole on the compression ring assembly along a vertical direction is located outside the first through hole.

[0017] In some embodiments, a projection of an inner wall of the second through hole on the compression ring assembly along a vertical direction is a first projection circle, an area of a surface of an upper side of the compression ring assembly inside the first projection circle is a first area, a projection of an inner wall of the first through hole on the support assembly along a vertical direction is a second projection circle, an area of the second projection circle is a second area, and a difference between the first area and the second area is less than a preset value.

[0018] The above at least one technical solution adopted by the embodiments of the present application can achieve the following beneficial effects:

[0019] In the embodiments of the present application, during the process of processing the wafer, the support assembly is raised to the process position, the blocking ring cover is arranged above the compression ring assembly, and the compression ring assembly is insulated and separated from the blocking ring and the shielding element respectively. In this way, the blocking ring can shield the compression ring assembly, so as to reduce the deposition amount of particles on the compression ring assembly, reduce the heat transferred to the wafer by the compression ring assembly, weaken the influence of the compression ring assembly on the temperature of the wafer, and thus improve the film forming quality of the wafer. Moreover, the blocking ring can shield the compression ring assembly, so as to reduce the amount of charge accumulated on the compression ring assembly, thereby improving the problem of sparking between the compression ring assembly and the wafer.

[0020] Further, after the process is completed, the support assembly is lowered, and the compression ring assembly is also lowered to the position supported by the shielding element. The charged particles accumulated on the compression ring assembly are released to the ground through the shielding element and the cavity. In the case that the blocking ring is lifted, after the process is completed, the blocking ring is also lowered to the position supported by the shielding element, and the charged particles accumulated on the blocking ring are also released to the ground through the shielding element and the cavity. In the case that the blocking ring is always supported by the shielding element, the charged particles on the blocking ring are released to the ground through the shielding element and the cavity in real time. In this way, the accumulation of charge on the compression ring assembly and the blocking ring can be avoided by releasing the charge on the compression ring assembly and the blocking ring. Thus, the sparking phenomenon caused by the accumulation of charge on the compression ring assembly and the blocking ring can be prevented. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed in the embodiments or the related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0022] FIG. 1 is a schematic view of a semiconductor process chamber provided by an embodiment of the present application, which shows the case that the support assembly is raised to the process position;

[0023] FIG. 2 is a partial schematic view of the semiconductor process chamber shown in FIG. 1;

[0024] FIG. 3 is a partial schematic view of a semiconductor process chamber provided by an embodiment of the present application, which shows the case that the support assembly is lowered to the position separated from the compression ring assembly;

[0025] FIG. 4 is a partial schematic view of another semiconductor process chamber provided by an embodiment of the present application, which shows the case that the support assembly is raised to the process position;

[0026] FIG. 5 is a bottom view of a blocking ring provided by an embodiment of the present application;

[0027] Fig. 6 is a schematic view of a support ring according to an embodiment of the present application;

[0028] Fig. 7 is a schematic view of a blocking ring and a pressing ring according to an embodiment of the present application;

[0029] Fig. 8 is a schematic view of a base and a positioning ring according to an embodiment of the present application;

[0030] Fig. 9 is a schematic view of a blocking ring according to an embodiment of the present application.

[0031] Reference signs: 100-semiconductor process chamber; 110-cavity; 110a-lower cavity; 110b-upper cavity; 111-cavity adapter; 112-insulating ring; 113-target assembly; 120-shield; 121-first main body portion; 122-first bent portion; 123-second bent portion; 130-blocking ring; 130a-second through hole; 131-second main body portion; 132-third bent portion; 1321-air hole; 133-first protruding ring; 1341-butting hole; 1342-positioning waist hole; 140-pressing ring assembly; 141-pressing ring; 141a-first through hole; 1411-second protruding ring; 1412-second positioning hole; 142-support ring; 1421-third main body portion; 1422-outer peripheral portion; 1423-protruding portion; 1424-first positioning hole; 150-support assembly; 151-base; 1511-bearing area; 1512-positioning pin; 152-positioning ring; 1521-first positioning column; 1522-annular inclined surface; 153-cooling disc; 154-insulating disc; 155-top disc; 156-stand; 161-insulating support column; 162-insulating positioning column; 170-support; 180-magnetron; 200-wafer. DETAILED DESCRIPTION

[0032] In order to make the objectives, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below with reference to the embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0033] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms “mounting”, “connection”, “connecting” should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium; can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] Furthermore, although the terms used in the present application are selected from publicly-known terms, some of the terms mentioned in the specification of the present application can be selected by the applicant(s) in his or her judgment, and the detailed meanings thereof are described in the relevant part of the description herein.

[0035] Furthermore, the present application is to be understood not only by the actual terms used, but also by the meanings implied by each term.

[0036] The technical solutions provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0037] The embodiments of the present application provide a semiconductor process chamber. Referring to FIGS. 1-9, the semiconductor process chamber 100 provided by the embodiments of the present application includes a cavity 110, a shield 120, a baffle ring 130, a compression ring assembly 140, and a support assembly 150. Exemplarily, the semiconductor process chamber 100 is a physical vapor deposition (PVD) process chamber.

[0038] The shield 120 is sleeved in the cavity 110, for example, is carried on the upper end of the cavity 110, and is grounded through the cavity 110. The shield 120 is used to guide away the ionized electrons in the semiconductor process chamber 100, and to protect other components in the semiconductor process chamber 100.

[0039] The baffle ring 130 and the compression ring assembly 140 are both sleeved in the shield 120, and the compression ring assembly 140 is carried on the shield 120. The baffle ring 130 is covered above the compression ring assembly 140, and the baffle ring 130 is carried on the shield 120. The support assembly 150 is used to carry a wafer 200.

[0040] When the support assembly 150 rises to a process position, the support assembly 150 lifts the compression ring assembly 140, the inner side edge of the compression ring assembly 140 is pressed on the periphery of the wafer 200, and the compression ring assembly 140 is insulated and separated from the baffle ring 130 and the shield 120, respectively.

[0041] It is noted that in the embodiments of the present application, the retaining ring assembly 140 is carried by the shield 120, and does not necessarily mean that the retaining ring assembly 140 must always remain in the state of being carried by the shield 120. For example, in the case where the semiconductor processing chamber 100 is in a state of being prepared for processing, the retaining ring assembly 140 is carried by the shield 120. In the case where the support assembly 150 is raised to a processing position, the support assembly 150 can lift the retaining ring assembly 140, so that the retaining ring assembly 140 is separated from the shield 120. After the semiconductor processing chamber 100 completes processing, the retaining ring assembly 140 is lowered with the support assembly 150 until the retaining ring assembly 140 is carried by the shield 120, and then the support assembly 150 continues to be lowered and separated from the retaining ring assembly 140. In other words, since the retaining ring assembly 140 is carried by the shield 120 in a separable manner, the retaining ring assembly 140 can be separated from the shield 120 in the case where the retaining ring assembly 140 is driven by a lifting force.

[0042] In addition, the retaining ring 130 is carried by the shield 120, and does not necessarily mean that the retaining ring 130 must always remain in the state of being carried by the shield 120. For example, in some embodiments, in the case where the semiconductor processing chamber 100 is in a state of being prepared for processing, the retaining ring 130 is carried by the shield 120. In the case where the support assembly 150 is raised to a processing position, the support assembly 150 can lift the retaining ring 130 through the retaining ring assembly 140, so that the retaining ring 130 is separated from the shield 120. After the semiconductor processing chamber 100 completes processing, the retaining ring assembly 140 is lowered with the support assembly 150 until the retaining ring assembly 140 is carried by the shield 120, and then the support assembly 150 continues to be lowered and separated from the retaining ring assembly 140, and the retaining ring 130 is also carried by the shield 120. In other words, in some embodiments, the retaining ring 130 is carried by the shield 120 in a separable manner, and the retaining ring 130 can be separated from the shield 120 in the case where the retaining ring 130 is driven by a lifting force. In some other embodiments, the retaining ring 130 can always be carried by the shield 120 regardless of whether the semiconductor processing chamber 100 is in a state of processing. For example, the retaining ring 130 is carried above the shield 120 and connected with the shield 120, so that the retaining ring 130 is always carried by the shield 120.

[0043] In this way, in the embodiments of the present application, during the process of the wafer 200, the support assembly 150 is raised to the process position, the blocking ring 130 is covered above the compression ring assembly 140, and the compression ring assembly 140 is insulated and separated from the blocking ring 130 and the shielding member 120, respectively. In this way, the blocking ring 130 can shield the compression ring assembly 140, so as to reduce the deposition amount of particles on the compression ring assembly 140, reduce the heat transferred from the compression ring assembly 140 to the wafer 200, weaken the influence of the compression ring assembly 140 on the temperature of the wafer 200, and thus improve the film forming quality of the wafer 200. Moreover, the blocking ring 130 can shield the compression ring assembly 140, so as to reduce the amount of charge accumulated on the compression ring assembly 140, and thus improve the problem of sparking between the compression ring assembly 140 and the wafer 200.

[0044] Further, after the process is completed, the support assembly 150 is lowered, and the compression ring assembly 140 is also lowered to the position supported by the shielding member 120. The charged particles accumulated on the compression ring assembly 140 are released to the ground through the shielding member 120 and the cavity 110. In the case that the blocking ring 130 can be lifted, after the process is completed, the blocking ring 130 is also lowered to the position supported by the shielding member 120, and the charged particles accumulated on the blocking ring 130 are also released to the ground through the shielding member 120 and the cavity 110; in the case that the blocking ring 130 is always supported by the shielding member 120, the charged particles on the blocking ring 130 are released to the ground through the shielding member 120 and the cavity 110 in real time. In this way, by discharging the charge of the compression ring assembly 140 and the blocking ring 130, the accumulation of charge on the compression ring assembly 140 and the blocking ring 130 can be avoided, so as to prevent sparking due to the accumulation of charge on the compression ring assembly 140 and the blocking ring 130.

[0045] Referring to FIGS. 1 to 3, in some embodiments, the compression ring assembly 140 includes a compression ring 141 and a support ring 142. The support ring 142 is supported by the shielding member 120, and the compression ring 141 is supported by the support ring 142. The projection of the compression ring 141 on the blocking ring 130 in the vertical direction is located inside the projection of the shielding member 120 on the blocking ring 130 in the vertical direction. In the case that the support assembly 150 is raised to the process position, the support assembly 150 lifts the support ring 142, and the inner edge of the compression ring 141 is gasketed to the periphery of the wafer 200.

[0046] In this way, the compression ring assembly 140 can be divided into the compression ring 141 and the support ring 142, such that the compression ring 141 is pressed against the wafer 200, and the support ring 142 is supported on the support assembly 150, thereby avoiding the compression ring assembly 140 being pressed against the wafer 200 as a whole, and thus preventing the wafer 200 from being damaged due to the excessive weight of the compression ring assembly 140. In addition, since the projection of the compression ring 141 on the baffle ring 130 in the vertical direction is located inside the projection of the shielding member 120 on the baffle ring 130 in the vertical direction, the outer diameter of the compression ring 141 can be reduced, thereby reducing the weight of the compression ring 141, and thus preventing the wafer 200 from being damaged due to the excessive weight of the compression ring 141.

[0047] It should be noted that, during the process of processing the wafer 200, the exhaust device below the wafer 200 can blow gas to the wafer 200 to cool the wafer 200. By using the scheme provided in the embodiments of the present application, the compression ring 141 is pressed against the periphery of the wafer 200, thereby sealing the back-blowing gas, and thus improving the cooling effect of the wafer 200.

[0048] Although those skilled in the art can refer to the related art to design the structure of the shielding member and the like, in order to facilitate those skilled in the art to better implement the scheme provided in the embodiments of the present application, the structure of the shielding member and the like is provided in more detail below for reference by those skilled in the art.

[0049] Referring to FIG. 2, in some embodiments, the shielding member 120 includes a first main body portion 121, a first bending portion 122, and a second bending portion 123 connected in sequence. The first main body portion 121 and the second bending portion 123 are spaced apart, and the second bending portion 123 is sleeved in the first main body portion 121, and both the first main body portion 121 and the second bending portion 123 protrude upward relative to the first bending portion 122. In other words, the shielding member 120 has a bending structure, and the shielding member 120 forms a U-shaped groove in a bent manner to carry the baffle ring 130 and the compression ring assembly 140 after the process is completed.

[0050] Referring to FIGS. 1 and 2, in some embodiments, the baffle ring 130 includes a second main body portion 131 and a third bending portion 132 connected. The second main body portion 131 covers the compression ring assembly 140, and the third bending portion 132 protrudes downward relative to the second main body portion 131. The third bending portion 132 is spaced apart between the first main body portion 121 and the second bending portion 123, and the end of the third bending portion 132 facing the first bending portion 122 is carried on the first bending portion 122. In this way, the first bending portion 122 can be used to carry the baffle ring 130.

[0051] Referring to FIG. 2, in some embodiments, the support ring 142 comprises a third body portion 1421 and an outer peripheral portion 1422 connected to each other. The outer peripheral portion 1422 is arranged at the outer periphery of the third body portion 1421. The outer peripheral portion 1422 is clamped between the second bending portion 123 and the second body portion 131 in the vertical direction, and the outer peripheral portion 1422 is carried on the second bending portion 123, and the compression ring 141 is carried on the third body portion 1421.

[0052] Further, the outer peripheral portion 1422 is upwardly protruding relative to the third body portion 1421. The compression ring 141 is sleeved on the inner side of the outer peripheral portion 1422. In this way, the outer diameter of the compression ring 141 can be reduced, so as to reduce the weight of the compression ring 141.

[0053] Referring to FIGS. 1, 2 and 4, in some embodiments, the support ring 142 further comprises a protruding portion 1423 connected to the third body portion 1421. The protruding portion 1423 is downwardly protruding relative to the third body portion 1421, and the protruding portion 1423 is sleeved in the second bending portion 123. In this way, the protruding portion 1423, the outer peripheral portion 1422, the second bending portion 123, the third bending portion 132, the second bending portion 123 and the first body portion 121 can form a first labyrinth channel for conveying the process gas from the lower cavity 110a to the upper cavity 110b. In addition, the first labyrinth channel can prevent the target atoms in the upper cavity 110b from moving to the lower cavity 110a through the first labyrinth channel, so as to contaminate the cavity wall of the lower cavity 110a.

[0054] In some embodiments, referring to FIGS. 2, 4, 7 and 9, the third bending portion 132 is provided with a gas hole 1321 penetrating through the third bending portion 132 along the thickness direction of the third bending portion 132. In this way, during the process treatment of the wafer 200, if the distance between the third bending portion 132 and the first bending portion 122 is small, the process gas can flow through the gas hole 1321, so as to make the flow of the process gas more smooth.

[0055] Referring to FIG. 2, in some embodiments, when the support assembly 150 is raised to the process position, i.e. during the process treatment of the wafer 200, the upper surface of the compression ring assembly 140 and the lower surface of the stop ring 130 form a spacing area. The spacing area is used to insulate and separate the compression ring assembly 140 and the stop ring 130 from each other.

[0056] The spacing region between the upper surface of the compression ring assembly 140 and the lower surface of the baffle ring 130 is in communication with the first labyrinth channel. Thus, the target atoms in the upper cavity 110b can be sputtered to the entire upper surface of the compression ring 141 through the spacing region. To avoid this problem, referring to FIGS. 2 and 4, in some embodiments, the second main body portion 131 is provided with a first protruding ring 133 protruding towards the compression ring assembly 140, the first protruding ring 133 being annular along the axis of the baffle ring 130. Exemplarily, the number of the first protruding ring 133 can be one or at least two. And / or, the compression ring 141 is provided with a second protruding ring 1411 protruding towards the second main body portion 131, the second protruding ring 1411 being annular along the axis of the compression ring 141. In this way, the second labyrinth channel can be formed between the upper surface of the compression ring assembly 140 and the lower surface of the baffle ring 130 to hinder the target atoms in the upper cavity 110b from moving towards the center of the second labyrinth channel.

[0057] It should be noted that, to avoid discharge caused by excessive potential difference between the baffle ring 130 and the compression ring 141, the spacing between the opposite surfaces of the baffle ring 130 and the compression ring 141 can be about 3 mm. Of course, those skilled in the art can flexibly adjust the spacing between the opposite surfaces of the baffle ring 130 and the compression ring 141 according to actual needs, which will not be listed one by one here. To avoid discharge caused by excessive potential difference between the baffle ring 130 and the support ring 142, the spacing between the opposite surfaces of the baffle ring 130 and the support ring 142 can be about 3 mm. Of course, those skilled in the art can flexibly adjust the spacing between the opposite surfaces of the baffle ring 130 and the support ring 142 according to actual needs, which will not be listed one by one here.

[0058] Referring to FIGS. 1, 2 and 8, in some embodiments, the support assembly 150 includes a base 151 and a positioning ring 152. The base 151 is provided with a bearing area 1511. The bearing area 1511 is used to bear the wafer 200. The positioning ring 152 is sleeved outside the bearing area 1511, and the upward side of the positioning ring 152 is provided with a first positioning column 1521. In combination with FIGS. 4 and 6, the support ring 142 is provided with a first positioning hole 1424 opposite to the first positioning column 1521. In combination with FIG. 4, the compression ring 141 is provided with a second positioning hole 1412 opposite to the first positioning column 1521. In the case that the support assembly 150 rises to the process position, the first positioning column 1521 is inserted into the first positioning hole 1424 and the second positioning hole 1412. The first positioning column 1521 is positioned and matched with the hole wall of the first positioning hole 1424 and the hole wall of the second positioning hole 1412, respectively.

[0059] Exemplarily, the number of the first positioning posts 1521 is at least two. For example, the number of the first positioning posts 1521 is three. In this way, the misalignment of the compression ring 141 and the wafer 200 carried on the base 151 can be prevented by the positioning cooperation between the support assembly 150 and the compression ring 141. In addition, the support assembly 150 can be positioned and cooperated with the support ring 142, and the support ring 142 can be positioned and cooperated with the baffle ring 130. In this way, the misalignment of the baffle ring 130 and the compression ring 141 can be prevented.

[0060] Referring to FIG. 2, in some embodiments, the inner circumferential surface of the positioning ring 152 is provided with an annular inclined surface 1522. The opening surrounded by the annular inclined surface 1522 gradually increases in the vertically upward direction. In this way, the annular inclined surface 1522 can be used to guide the wafer 200 to be carried on the carrying area 1511. During the process of carrying the wafer 200 on the carrying area 1511, the annular inclined surface 1522 can play a positioning role and can prevent the wafer 200 from deviating in position relative to the carrying area 1511.

[0061] Referring to FIG. 2, in some embodiments, the base 151 is provided with a positioning pin 1512 protruding towards the positioning ring 152, and the positioning ring 152 is provided with a positioning groove, and the positioning pin 1512 is positioned and cooperated with the positioning groove to prevent the positioning ring 152 from misaligning relative to the base 151.

[0062] In some embodiments, as shown in FIG. 1, the support assembly 150 further includes a cooling disc 153, an insulating disc 154, a bellows (not shown) and a column 156. The cooling disc 153 is arranged below the base 151, and the cooling disc 153 is used to cool the base 151, thereby indirectly cooling the wafer 200. The bellows (not shown) is arranged below the insulating disc 154, one end of the bellows is connected with the insulating disc 154 through the top disc 155, and the other end of the bellows is connected with the column 156 through a bottom disc (not shown). In addition, the column 156 is used to be connected with a driver. The driver is used to drive the column 156 to rise and fall, so that the support assembly 150 as a whole rises and falls.

[0063] Referring to FIGS. 2, 3 and 6, in some embodiments, the semiconductor process chamber 100 further includes an insulating support 161. The insulating support 161 is arranged on the side of the compression ring assembly 140 facing the baffle ring 130. In the case that the support assembly 150 rises to a process position, the compression ring assembly 140 lifts the baffle ring 130 through the insulating support 161, so that the baffle ring 130 is insulated and separated from the shield 120. In this way, the wafer 200 can be raised to a higher height by lifting the baffle ring 130 with the insulating support 161 of different heights (i.e. the baffle ring 130 can be raised to different heights suitable for different process positions required by different processes), thereby facilitating the deposition of atoms on the wafer 200.

[0064] Referring to FIGS. 2, 3 and 5, in some embodiments, the side of the retaining ring 130 facing the compression ring assembly 140 is provided with a butt joint hole 1341 and at least three positioning waist round holes 1342. The positioning waist round holes 1342 are distributed circumferentially around the axis of the retaining ring 130, and the long axis of the positioning waist round holes 1342 extends in the radial direction of the retaining ring 130. The number of the insulating support posts 161 is equal to the number of the butt joint holes 1341. The semiconductor process chamber 100 further comprises a plurality of insulating positioning posts 162, and the number of the insulating positioning posts 162 is equal to the number of the positioning waist round holes 1342.

[0065] In the case where the support assembly 150 is raised to the process position, the insulating support posts 161 are inserted into the butt joint holes 1341 one-to-one and supported in cooperation with the butt joint holes 1341, and the insulating positioning posts 162 are inserted into the positioning waist round holes 1342 one-to-one and positioned in cooperation with the side walls of the positioning waist round holes 1342.

[0066] It should be noted that the "waist round" refers to a closed figure formed by connecting the end points of two semicircular arcs with two equal and parallel lines, where the two semicircular arcs are divided into two halves by the center of the circle and are translated in opposite directions. The "waist round hole" refers to a hole with a "waist round" shape in the cross-sectional view in the depth direction. The "positioning waist round hole" refers to a waist round hole that functions as a positioning function. In addition, the long axis of the positioning waist round hole 1342 is collinear with the line connecting the two centers of the waist round.

[0067] With the above scheme, the compression ring assembly 140 and the retaining ring 130 can be positioned by inserting the insulating positioning posts 162 into the positioning waist round holes 1342 one-to-one. In addition, the cooperation of the insulating support posts 161 and the butt joint holes 1341 functions to assist in supporting the retaining ring 130.

[0068] In addition, by way of example, the number of the positioning waist round holes 1342 can be three, the number of the butt joint holes 1341 can be three, and the positioning waist round holes 1342 and the butt joint holes 1341 are uniformly and alternately distributed in the circumferential direction of the retaining ring 130. For example, the central angle formed by the adjacent positioning waist round holes 1342 and the butt joint holes 1341 and the center of the retaining ring 130 is 60 degrees.

[0069] It should be further noted that in the case where the compression ring assembly 140 comprises the support ring 142, the insulating support posts 161 are provided on the side of the support ring 142 facing the retaining ring 130. Specifically, the insulating support posts 161 can be provided on the outer peripheral portion 1422 of the support ring 142. In the case where the support assembly 150 is raised to the process position, the support ring 142 lifts the retaining ring 130 via the insulating support posts 161, so that the retaining ring 130 is insulated and separated from the shielding member 120.

[0070] Referring to FIG. 4, in some embodiments, the semiconductor processing chamber 100 further comprises a support 170. The support 170 is disposed on a side of the baffle ring 130 facing the shield 120. The baffle ring 130 is connected to the shield 120 via the support 170, and the baffle ring 130 is grounded via the support 170, the shield 120, and the cavity 110 in sequence. For example, the support 170 is connected to the third bending portion 132 of the baffle ring 130 and the first bending portion 122 of the shield 120, respectively.

[0071] With this scheme, since the baffle ring 130 is connected to the shield 120 via the support 170, during the process of processing the wafer 200, the electric charge on the baffle ring 130 can be discharged to the ground end via the support 170, the shield 120, and the cavity 110. In this way, during the implementation of high-power processes, the baffle ring 130 is less likely to have a sparking phenomenon with adjacent other components.

[0072] In addition, since the baffle ring 130 is connected to the shield 120 via the support 170, during the process of processing the wafer 200, the upper surface of the compression ring assembly 140 needs to maintain a certain distance from the baffle ring 130.

[0073] In addition, it should be noted that, in the case where the baffle ring 130 is connected to the shield 120 via the support 170, the distance between the third bending portion 132 of the baffle ring 130 and the first bending portion 122 of the shield 120 can be small, and thus, by providing the gas hole 1321 on the third bending portion 132, the process gas can flow through the gas hole 1321, and the flow of the process gas can be smoother.

[0074] The above respectively provides a scheme in which the baffle ring 130 can be lifted up and a scheme in which the baffle ring 130 is connected to the shield 120 via the support 170. In the scheme in which the baffle ring 130 can be lifted up, in the case where the support assembly 150 is lowered to a position separated from the compression ring assembly 140, the baffle ring 130 is in a grounded state; in the case where the support assembly 150 is raised to a process position, the baffle ring 130 is separated from the shield 120, so that the baffle ring 130 is disconnected from the ground end. That is, in the scheme in which the baffle ring 130 can be lifted up, the baffle ring 130 can be switched between a grounded state and a suspended state. In the scheme in which the baffle ring 130 is connected to the shield 120 via the support 170, the baffle ring 130 is always in a grounded state, and this scheme is suitable for high-power process scenarios.

[0075] Referring to FIGS. 1, 2 and 7, in some embodiments, the compression ring assembly 140 is provided with a first through hole 141a penetrating the compression ring assembly 140 in the vertical direction. The peripheral part of the first through hole 141a is used for pressing the wafer 200. The stop ring 130 is provided with a second through hole 130a penetrating the stop ring 130 in the vertical direction. The inner wall of the second through hole 130a projects on the compression ring assembly 140 in the vertical direction and is located outside the first through hole 141a. In this way, the stop ring 130 can avoid blocking the wafer 200.

[0076] In some embodiments, the inner wall of the second through hole 130a projects on the compression ring assembly 140 in the vertical direction and forms a first projection circle. The area of the surface of the upper side of the compression ring assembly 140 located inside the first projection circle is a first area. The inner wall of the first through hole 141a projects on the support assembly 150 in the vertical direction and forms a second projection circle. The area of the second projection circle is a second area. The difference between the first area and the second area is less than a preset value. For example, the first area is substantially equal to the second area.

[0077] In this way, part of the inner periphery of the compression ring assembly 140 is exposed outside through the second through hole 130a, and charges can be accumulated in the exposed area of the inner periphery of the compression ring assembly 140. In addition, the upper surface of the wafer 200 can be exposed outside through the first through hole 141a, and charges can also be accumulated on the upper surface of the wafer 200. Further, by making the first area substantially equal to the second area, the charges accumulated in the compression ring assembly 140 and the charges accumulated on the upper surface of the wafer 200 can be substantially equal, so as to reduce the potential difference between the compression ring assembly 140 and the wafer 200, thereby preventing the compression ring assembly 140 and the wafer 200 from sparking.

[0078] In some embodiments, when the compression ring assembly 140 includes the compression ring 141 and the support ring 142, the first through hole 141a is formed in the compression ring 141. The first projection circle is formed in the compression ring 141, and the first area is the area of the top surface of the compression ring 141 located in the first projection circle. In addition, the second area is the area of the top surface of the wafer 200 not blocked by the compression ring 141. In other words, the second area is the area of the region of the wafer 200 exposed outside through the first through hole 141a of the compression ring 141.

[0079] It is noted that in the above embodiments, the pressure ring assembly 140 is mainly provided as a split structure including the pressure ring 141 and the support ring 142, and it is understood that in other embodiments, the pressure ring 141 and the support ring 142 can also be provided as an integrated structure. In this way, the wafer 200 can also be clamped by the integrated pressure ring assembly 140, and the charge of the pressure ring assembly 140 can be released through the shield 120 and the cavity 110 after the process is completed. However, it is also noted that the split pressure ring assembly 140 can reduce the load of the wafer 200, and can prevent the wafer 200 from being damaged by the pressure ring assembly 140, because the support ring 142 can be carried by the support assembly 150.

[0080] Referring to FIG. 1, in some embodiments, the semiconductor process chamber 100 further includes a cavity adapter 111. The cavity adapter 111 is carried at the top end of the cavity 110. The shield 120 is carried on the cavity adapter 111. Further, the semiconductor process chamber 100 further includes an insulating ring 112 and a target assembly 113. The insulating ring 112 is carried on the cavity adapter 111, and the target assembly 113 is carried on the insulating ring 112. Further, the semiconductor process chamber 100 further includes a magnetron 180. The magnetron 180 is disposed above the target assembly 113.

[0081] It is noted that in this document, the terms such as first and second are used merely to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Also, the terms “comprising”, “containing” or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus including a list of elements does not only include those elements, but also includes other elements not explicitly listed, or further includes elements inherent in such a process, method, article or apparatus.

[0082] Although the embodiments of the present application have been shown and described, it is understood that for those ordinary skilled in the art, various changes, modifications, replacements and variations of the embodiments can be made without departing from the principles and spirits of the embodiments, and the scope of the embodiments of the present application is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber, characterized in that, The utility model relates to a shielded chamber for processing semiconductor wafer, comprising: a cavity, a shield, a baffle ring, a compression ring assembly and a support assembly; the shield is sleeved in the cavity and grounded through the cavity, the baffle ring and the compression ring assembly are both sleeved in the shield, the compression ring assembly is carried on the shield, the baffle ring is covered above the compression ring assembly, the support assembly is used to carry wafer; when the support assembly rises to the process position, the support assembly lifts the compression ring assembly, the inner edge of the compression ring assembly is pressed on the circumference of the wafer, and the compression ring assembly is insulated and separated from the baffle ring and the shield respectively.

2. The semiconductor process chamber of claim 1, wherein, the compression ring assembly comprises a compression ring and a support ring; the support ring is carried on the shield, and the compression ring is carried on the support ring; the projection of the compression ring on the baffle ring in the vertical direction is located inside the projection of the shield on the baffle ring in the vertical direction; when the support assembly rises to the process position, the support assembly lifts the support ring, and the inner edge of the compression ring is pressed on the circumference of the wafer.

3. The semiconductor process chamber of claim 2, wherein, the shield comprises a first main body part, a first bending part and a second bending part connected in sequence; the first main body part and the second bending part are spaced apart, the second bending part is sleeved in the first main body part, and the first main body part and the second bending part both protrude upward relative to the first bending part; the baffle ring comprises a second main body part and a third bending part connected, the second main body part covers above the compression ring assembly, the third bending part protrudes downward relative to the second main body part, the third bending part is arranged between the first main body part and the second bending part, and the end of the third bending part towards the first bending part is carried on the first bending part.

4. The semiconductor process chamber of claim 3, wherein, the support ring comprises a third main body part and an outer circumferential part connected, the outer circumferential part is arranged outside the third main body part, the outer circumferential part is clamped between the second bending part and the second main body part in the vertical direction, the outer circumferential part is carried on the second bending part, and the compression ring is carried on the third main body part.

5. The semiconductor process chamber of claim 4, wherein, the support ring further comprises a protruding part connected with the third main body part, the protruding part protrudes downward relative to the third main body part, the protruding part is sleeved in the second bending part, and the third bending part is provided with a gas hole penetrating through the third bending part along the thickness direction of the third bending part.

6. The semiconductor process chamber of claim 3, wherein, the second main body part is provided with a first protruding ring protruding towards the compression ring assembly, the first protruding ring surrounds along the axis of the baffle ring; and / or the compression ring is provided with a second protruding ring protruding towards the second main body part, the second protruding ring surrounds along the axis of the compression ring.

7. The semiconductor process chamber of claim 2, wherein, the support assembly comprises a base and a positioning ring, the base is provided with a carrying area, the positioning ring is sleeved outside the carrying area, the upward side of the positioning ring is provided with a first positioning column, the support ring is provided with a first positioning hole opposite to the first positioning column, the compression ring is provided with a second positioning hole opposite to the first positioning column, and when the support assembly rises to the process position, the first positioning column is inserted into the first positioning hole and the second positioning hole.

8. The semiconductor process chamber of claim 1, wherein, The semiconductor process chamber further comprises an insulating support pillar arranged on a side of the compression ring assembly facing the baffle ring, the compression ring assembly supports the baffle ring via the insulating support pillar when the support assembly is raised to the process position, so that the baffle ring is insulated and separated from the shield.

9. The semiconductor process chamber of claim 8, wherein, A side of the baffle ring facing the compression ring assembly is provided with a butt joint hole and at least three positioning waist round holes, the positioning waist round holes are distributed circumferentially around the axis of the baffle ring, the long axis of the positioning waist round hole extends along the radial direction of the baffle ring, the number of the insulating support pillars is equal to the number of the butt joint holes, and the semiconductor process chamber further comprises a plurality of insulating positioning columns, the number of the insulating positioning columns is equal to the number of the positioning waist round holes. When the support assembly is raised to the process position, the insulating support pillars are inserted into the butt joint holes one by one and supported by the butt joint holes, and the insulating positioning columns are inserted into the positioning waist round holes one by one and positioned by the side walls of the positioning waist round holes.

10. The semiconductor process chamber of claim 1, wherein, The semiconductor process chamber further comprises a support arranged on a side of the baffle ring facing the shield, the baffle ring is connected to the shield via the support, and the baffle ring is grounded via the support, the shield and the cavity in sequence.

11. The semiconductor process chamber of claim 1, wherein, The compression ring assembly is provided with a first through hole penetrating the compression ring assembly in the vertical direction, and the peripheral part of the first through hole is used for pressing the wafer; the baffle ring is provided with a second through hole penetrating the baffle ring in the vertical direction, and the projection of the inner wall of the second through hole on the compression ring assembly in the vertical direction is located on the periphery of the first through hole.

12. The semiconductor process chamber of claim 11, wherein, The projection of the inner wall of the second through hole on the compression ring assembly in the vertical direction is a first projection circle, the area of the surface of the upper side of the compression ring assembly inside the first projection circle is a first area, the projection of the inner wall of the first through hole on the support assembly in the vertical direction is a second projection circle, the area of the second projection circle is a second area, and the difference between the first area and the second area is less than a predetermined value.

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