Packaging structure and manufacturing method therefor

Abstract

Provided in the present invention are a packaging structure and a manufacturing method therefor. The manufacturing method comprises the following steps: providing a plurality of base layers, wherein each of the base layers comprises an electrical connection layer and a support layer located therebelow, and the plurality of base layers include a first base layer and a second base layer; arranging the side of the second base layer provided with the electrical connection layer opposite the side of the first base layer provided with the electrical connection layer; connecting the electrical connection layer of the second base layer to the electrical connection layer of the first base layer; and removing the support layer of the second base layer so as to transfer the electrical connection layer of the second base layer onto the first base layer. By means of partitioning and connecting a plurality of electrical connection layers in a conventional multi-RDL structure and using the multi-RDL structure as a premise, the manufacturing method avoids repeated high-temperature baking of some of dielectric layers in RDL layers, thereby improving the working performance stability and reliability of the overall packaging structure, and also meeting the requirement of advanced packaging with higher density and more layers. The working stability and reliability of the packaging structure are improved.

Description

Package structure and manufacturing method thereof TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor package structure and manufacturing, and relates to a package structure and a manufacturing method thereof. BACKGROUND

[0002] Chiplet technology is a new advanced packaging method developed by the semiconductor industry to continuously improve the integration and performance of chips in the face of the challenge of the slowing down of Moore's Law. By dividing a complex system-on-chip into multiple smaller and function-specific modules or chiplets according to IP functions, these chiplets can be independently manufactured based on their own characteristics to optimize cost and update performance, and then packaged to improve design flexibility and scalability.

[0003] In order to meet the requirements of high-bandwidth and high-performance for high-performance computing, advanced packaging technologies with high density and large bandwidth (such as ultra-high density fan-out packaging technology, 2.5D and 3D packaging technology, etc.) are needed to connect different chiplets. As one of the key technologies in advanced packaging technology, multi-layer redistribution layer (RDL) is used to redistribute and connect the input / output (I / O) ports on the chip between different layers to achieve more complex interconnection and higher integration under the requirement of high-density line width and line spacing.

[0004] With the development of packaging technology, the increase in the number of RDL layers can provide higher interconnection density, support more functional integration, smaller packaging size, and also improve signal transmission quality to reduce loss in signal transmission and improve the performance of the overall packaging structure. However, it is found in actual applications that the working stability and reliability of packaging structures with multiple RDL layers are usually lower than expected.

[0005] Therefore, how to provide a package structure and a manufacturing method thereof to improve the working stability and reliability of packaging structures with multiple RDL layers has become an important technical problem to be solved by those skilled in the art.

[0006] It should be noted that the above introduction to the technical background is only to facilitate a clear and complete description of the technical solutions of the present application, and to facilitate the understanding of those skilled in the art. The above technical solutions cannot be considered as known to those skilled in the art merely because they are described in the background section of the present application. SUMMARY

[0007] In view of the above-mentioned defects of the prior art, the purpose of the present application is to provide a packaging structure and a manufacturing method thereof, which are used to solve the problem that the working stability and reliability of the packaging structure with multiple RDLs in the prior art need to be improved.

[0008] To achieve the above-mentioned purpose and other related purposes, the present application provides a manufacturing method of a packaging structure, comprising the following steps:

[0009] providing multiple base layers, the base layers comprising an electrical connection layer and a support layer, the support layer being located below the electrical connection layer, and the multiple base layers comprising a first base layer and a second base layer;

[0010] arranging the side of the second base layer provided with the electrical connection layer to face the side of the first base layer provided with the electrical connection layer;

[0011] connecting the electrical connection layer of the second base layer with the electrical connection layer of the first base layer;

[0012] removing the support layer of the second base layer to transfer the electrical connection layer of the second base layer to the first base layer.

[0013] Optionally, the method of connecting the electrical connection layer of the second base layer with the electrical connection layer of the first base layer comprises at least one of a hybrid bonding method and a thermal compression bonding method.

[0014] Optionally, the base layer further comprises a release layer, the release layer being located between the support layer and the electrical connection layer.

[0015] Optionally, the method of removing the support layer of the second base layer comprises laser debonding based on the release layer of the second base layer to separate the support layer of the second base layer from the electrical connection layer of the second base layer.

[0016] Optionally, the base layer further comprises a protective layer, the protective layer being located between the release layer and the electrical connection layer.

[0017] Optionally, the multiple base layers further comprise an i-th base layer, i being an integer greater than 2, and the manufacturing method further comprises the following steps:

[0018] arranging the i-th base layer above the first base layer so that the side of the i-th base layer provided with the electrical connection layer faces the side of the first base layer provided with the electrical connection layer;

[0019] connecting the electrical connection layer of the i-th base layer with the electrical connection layer of the i-1-th base layer transferred above the first base layer;

[0020] removing the support layer of the i-th base layer to transfer the i-th base layer electrically connecting layer to above the first base layer, and the electrically connecting layers of the first base layer, the second base layer and the i-th base layer are sequentially stacked and connected to form a rewiring layer.

[0021] Optionally, the electrically connecting layer comprises at least one of a single-layer structure and a multi-layer structure.

[0022] Optionally, when the electrically connecting layer is a multi-layer structure, the method for forming the base layer comprises the following steps:

[0023] providing a support layer;

[0024] sequentially forming n initial electrically connecting layers above the support layer, and the n initial electrically connecting layers are sequentially stacked from bottom to top to form the electrically connecting layer, 1 < n < 6.

[0025] Optionally, when the electrically connecting layer is a multi-layer structure, the method for forming the base layer comprises the following steps:

[0026] providing at least two initial layers, the initial layers comprising an initial electrically connecting layer and an initial support layer below the initial electrically connecting layer;

[0027] arranging the two initial layers with the initial electrically connecting layers facing each other;

[0028] connecting the two initial electrically connecting layers and removing one of the initial support layers.

[0029] The application further provides a packaging structure obtained by the method, the packaging structure comprising a rewiring layer, and the rewiring layer comprising at least two electrically connecting layers, and the two electrically connecting layers being connected to each other.

[0030] As described above, the method for manufacturing the packaging structure of the application avoids repeatedly high-temperature baking of part of the dielectric layers in the RDL layer by splitting and connecting the multi-layer electrically connecting layers in the traditional multi-layer RDL structure, and under the premise of manufacturing the multi-layer RDL, the working performance stability and reliability of the overall packaging structure are improved by ensuring the stability and reliability of the dielectric layer structure, and the upper limit of the number of RDL layers can be easily broken through to meet the increasing demand for advanced packaging with higher density and more layers. The packaging structure of the application has improved and enhanced working performance stability and reliability compared with the existing packaging structure with multi-layer RDL, and the manufacturing process is simple and suitable for large-scale production with low cost and high efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 shows a flow chart of the steps of the method for fabricating the package structure of the present application.

[0032] Figure 2 shows a cross-sectional view of a base layer in the method for fabricating the package structure of the present application.

[0033] Figure 3 shows another cross-sectional view of a base layer in the method for fabricating the package structure of the present application.

[0034] Figure 4 shows a cross-sectional view of the structure after step S2 in the method for fabricating the package structure of the present application.

[0035] Figure 5 shows a cross-sectional view of the structure after step S3 in the method for fabricating the package structure of the present application.

[0036] Figure 6 shows a cross-sectional view of the structure after step S4 in the method for fabricating the package structure of the present application.

[0037] Figure 7 shows a cross-sectional view of the structure after the i-th base layer is disposed above the first base layer in the method for fabricating the package structure of the present application.

[0038] Figure 8 shows a cross-sectional view of the structure after the support layer of the i-th base layer is removed in the method for fabricating the package structure of the present application.

[0039] Figure 9 shows a cross-sectional view of the redistribution layer in the package structure of the present application.

[0040] Figure 10 shows a cross-sectional view of the package structure of the present application.

[0041] Reference numerals 10 base layer 10a first base layer 10b second base layer 10c i-th base layer 11 electrically connecting layer 11a, 11b sub-electrically connecting layer 111 dielectric layer 112 electrically connecting unit 12 support layer 13 release layer 14 protective layer 100 re-wiring layer 200 functional chip 300 plastic encapsulation layer 400 packaging substrate S1-S4 steps DETAILED DESCRIPTION

[0042] Other advantages and effects of the present application can be easily understood by those skilled in the art from the contents disclosed in the present specification. The present application can also be implemented or applied in other different embodiments, and the details in the present specification can be modified or changed based on different views and applications without departing from the spirit of the present application.

[0043] Please refer to FIG. 1 to FIG. 10. It is to be noted that the drawings provided in the present embodiment only schematically illustrate the basic concept of the present application, and thus the drawings only show the components related to the present application rather than being drawn according to the number, shape and size of the components in actual implementation. The type, number and ratio of the components in actual implementation can be arbitrarily changed, and the layout type of the components can be more complicated.

[0044] After analyzing and verifying the problems mentioned in the background section, it is found that one of the important reasons for the above problems is that the current multi-layer RDL is made by repeatedly stacking, that is, repeatedly coating the medium layer, exposing, developing and high-temperature (e.g. 260℃) baking the medium layer (e.g. organic PI layer) to form a stacked RDL. With the increase of the number of RDL layers, the number of repeated baking of the first layer of medium layer also increases. For example, during the process of making a 6-layer RDL, the first layer of medium layer needs to be baked at least 5 times when the second to sixth layers of RDL medium layer are baked at high temperature in addition to the active high-temperature baking when the first layer of RDL is made. Correspondingly, the second layer of medium layer also needs to be baked at least 5 times. In repeated high-temperature baking, the medium layer material is heat aged due to long-term high-temperature process conditions, and its thermal stability is reduced due to repeated thermal cycling, which greatly increases the probability of heat aging, deformation and cracking. In addition to the possibility of damaging the insulation performance between layers, increasing the risk of short circuit or electric leakage and affecting the stability of the working performance, it also affects the long-term reliability and durability. In addition, due to the mismatch of the coefficient of thermal expansion (CTE) between the metal layer embedded in part of the medium layer and the metal layer, the risk and degree of RDL warping are increased, which affects the precision and yield of the packaging structure, and even affects the mechanical stability of the packaging structure due to the mismatch of the coefficient of thermal expansion between the packaging substrate and the chip inside the packaging structure during subsequent use.

[0045] Based on the analysis and multiple verifications of the above reasons, the present application proposes the following technical solutions to improve and enhance the overall working performance stability and reliability of the packaging structure from the perspective of avoiding repeated baking of the medium layer in the RDL.

[0046] Embodiment one

[0047] The present embodiment provides a method for manufacturing a packaging structure. Referring to FIG. 1, which shows a step flow chart of the manufacturing method, the method comprises the following steps:

[0048] S1: providing a plurality of base layers, the base layers comprising an electrically conductive layer and a support layer, the support layer being located below the electrically conductive layer, the plurality of base layers comprising a first base layer and a second base layer;

[0049] S2: arranging the second base layer with the electrically conductive layer on one side of the first base layer with the electrically conductive layer;

[0050] S3: connecting the electrically conductive layer of the second base layer with the electrically conductive layer of the first base layer;

[0051] S4: removing the support layer of the second base layer to transfer the electrically conductive layer of the second base layer to the first base layer.

[0052] First, please refer to FIG. 2 and FIG. 3, which respectively show two kinds of basic layer structures, performing step S1, providing a plurality of basic layers 10, which include an electrical connection layer 11 and a support layer 12, which is located below the electrical connection layer 11, a plurality of the basic layers 10 including a first basic layer 10a and a second basic layer 10b (please refer to FIG. 4), that is, a plurality of basic layers 10 including at least a first basic layer 10a and a second basic layer 10b, and according to actual needs, it may also include a third basic layer, …, an i-1 basic layer, an i basic layer 10c, etc., the overall structure of each basic layer is the same, including an electrical connection layer and a support layer, based on high-density electrical interconnection and different between interconnection objects, some details of the structure may be different, for example, the thickness of the electrical connection layer, the specific structure of the internal electrical connection unit (that is, the wiring method), the number of layers, etc. Details such as parameters are different.

[0053] As an example, as shown in FIG. 2, the electrical connection layer 11 includes a dielectric layer 111 and an electrical connection unit 112 embedded in the dielectric layer 111, and after subsequent multi-layer stacking connection, the electrical connection units 112 in different electrical connection layers 11 are connected to each other to realize the transmission of electrical signals. The dielectric layer 111 includes an organic material such as PI. It should be noted that the structure shown in FIG. 2 is only an example for illustration, and the specific structure of the electrical connection unit is not necessarily the same as FIG. 2.

[0054] As an example, the support layer 12 includes at least one of a glass substrate, a silicon substrate, a ceramic substrate, and an organic substrate. In this embodiment, a glass substrate is used, which has the advantages of low cost, high strength, strong chemical stability and thermal stability, etc., and meets the repeated recycling demand, and the impact on the manufacturing cost of the packaging structure can be ignored.

[0055] As an example, as shown in FIG. 2, the basic layer 10 further includes a release layer 13 located between the support layer 12 and the electrical connection layer 11. The release layer serves as an intermediate layer between the support layer and the electrical connection layer to facilitate the subsequent smooth separation of the two without damaging the structure of the electrical connection layer and the support layer. It can not only ensure that the structure of the electrical connection layer is not affected, but also ensure the structural integrity of the support layer to realize recycling and reduce production cost.

[0056] As an example, as shown in FIG. 2, the basic layer 10 further includes a protective layer 14 located between the release layer 13 and the electrical connection layer 11. Since the electrical connection layer is made above the release layer, the protective layer can avoid the problem of causing damage or destruction to the release layer during the manufacturing process of the electrical connection layer (for example, passively accepting unnecessary etching and gel liquid corrosion, etc.), avoiding the subsequent smooth release of the support layer.

[0057] Further, the material of the protective layer includes at least one of organic insulating material and inorganic insulating material, such as PI, and the thickness of the protective layer ranges from 1 to 10 μm, including but not limited to 4 μm, 6 μm and 8 μm. It is noted that in the case of the protective layer, it is necessary to ensure that the protective layer can also be removed synchronously in the subsequent support layer releasing process to avoid the influence of its residues on the complete transmission of electrical signals between the two adjacent electrical connection layers and the overall structural flatness, therefore, the material of the protective layer is preferably PI, and the thickness of the protective layer is preferably 2 to 5 μm, which can simultaneously satisfy the good protection of the releasing layer and the smooth releasing of the support layer.

[0058] Referring to FIG. 4, in step S2, one side of the second base layer 10b provided with the electrical connection layer 11 is arranged opposite to one side of the first base layer 10a provided with the electrical connection layer 11. In this embodiment, the second base layer is inverted above the first base layer to arrange the electrical connection layers of the two layers opposite to each other, and in actual application, other suitable arrangement methods can also be used under the premise of ensuring the opposite arrangement of the two layers to realize subsequent connection, such as horizontal placement of the two layers.

[0059] Referring to FIG. 5, in step S3, the electrical connection layer 11 of the second base layer 10b is connected with the electrical connection layer 11 of the first base layer 10a.

[0060] For example, the method for connecting the electrical connection layer 11 of the second base layer 10b with the electrical connection layer 11 of the first base layer 10a includes at least one of hybrid bonding and thermal compression bonding.

[0061] Referring to FIG. 6, in step S4, the support layer 12 of the second base layer 10b is removed to transfer the electrical connection layer 11 of the second base layer 10b to the first base layer 10a.

[0062] As an example, the method for removing the support layer 12 of the second base layer 10b includes laser debonding based on the release layer 13 of the second base layer 10b (based on the release layer 13 and the protective layer 14 if the protective layer 14 is provided) to separate the support layer 12 of the second base layer 10b from the electrical connection layer 11 of the second base layer 10b. Specifically, the laser debonding is performed by applying a laser beam to the release layer to soften the release layer and make it fall off from the electrical connection layer, thereby removing the support layer. The laser debonding is selected for the following reasons: the laser debonding has high accuracy and controllability, and can be performed at room temperature without causing negative effects on the electrical connection layer and other structural layers. Although thermal debonding, chemical debonding, thermal slip debonding, and mechanical peeling can also achieve the purpose of removing the support layer, the electrical connection layer has a dielectric layer, and the dielectric layer is prone to warping and reliability problems when subjected to high-temperature process environment multiple times. Therefore, the methods requiring high-temperature conditions are not very suitable for removing the top support layer of the present embodiment. The mechanical peeling and chemical debonding are prone to cause damage or destruction to the electrical connection layer and other structures. Therefore, the laser debonding is preferred in the present embodiment.

[0063] As an example, referring to FIGS. 7-9, the plurality of base layers 10 further includes an i-th base layer 10c, where i is an integer greater than 2. The manufacturing method further includes the following steps:

[0064] As shown in FIG. 7, the i-th base layer 10c is arranged above the first base layer 10a such that the side of the i-th base layer 10c provided with the electrical connection layer 11 faces the side of the first base layer 10a provided with the electrical connection layer 11 (i.e., the electrical connection layer 11 of the i-th base layer 10c is arranged opposite to the electrical connection layer 11 of the (i-1)-th base layer 10 transferred above the first base layer 10a);

[0065] As shown in FIG. 8, the electrical connection layer 11 of the i-th base layer 10c is connected to the electrical connection layer 11 of the (i-1)-th base layer 10 transferred above the first base layer 10a;

[0066] As shown in Fig. 9, the support layer 12 of the ith base layer 10c is removed to transfer the electrical connection layer 11 of the ith base layer 10c above the first base layer 10a, and the electrical connection layers 11 of the first base layer 10a, the second base layer 10b, and the ith base layer 10c are sequentially stacked and connected to form the rewiring layer 100. That is, the electrical connection layers of two base layers are oppositely arranged and connected to transfer the electrical connection layer of one base layer above the other base layer to obtain a support layer-two-layer electrical connection layer structure, and then the electrical connection layer of a third base layer is arranged and connected toward the structure with two-layer electrical connection layers to obtain a support layer-three-layer electrical connection layer, and so on to finally obtain a support layer-i-layer electrical connection layer structure, and then the support layer is removed to obtain a multi-layer rewiring layer, and the number of layers of the multi-layer rewiring layer is i (i.e., the rewiring layer is composed of i layers of electrical connection layers, including the electrical connection layer of the first base layer, the electrical connection layer of the second base layer, the electrical connection layer of the ith-1 base layer, and the electrical connection layer of the ith base layer). In this embodiment, the method of connecting each electrical connection layer and the method of removing each support layer are preferably the same to ensure process stability. In addition, it should be noted that when the ith base layer is included in the plurality of base layers, the ith-1 base layer is also included, and when i is 3, the ith-1 base layer is the second base layer, when i is 4, the ith-1 base layer is the third base layer, and so on.

[0067] As an example, the electrical connection layer 11 includes at least one of a single-layer structure (as shown in FIG. 2) and a multi-layer structure (as shown in FIG. 3, the electrical connection layer 11 includes two sub-electrical connection layers 11a / 11b). The electrical connection layers of the plurality of base layers are the same, or partially the same and partially different, or all different. For example, the electrical connection layer of the first base layer is a single-layer structure, and the electrical connection layer of the second base layer is a multi-layer structure. If the electrical connection layers of the plurality of base layers are all single-layer structures, and the number of layers of the electrical connection layer in the target redistribution layer is relatively large (for example, m layers), it is equivalent to providing at least m base layers, and sequentially stacking and connecting the electrical connection layers of each base layer, and removing the support layer of each base layer after transferring the electrical connection layer of each base layer to the structure of the stacked and connected electrical connection layers. In this way, each electrical connection layer only needs to be subjected to a high-temperature baking process once, and will not be warped and deformed and the reliability will be weakened due to repeated high-temperature baking. The overall structural stability and reliability of the packaging structure are effectively guaranteed. However, this will face a problem, that is, it will greatly prolong the overall process time of the packaging structure and affect the production efficiency. If the electrical connection layers of the plurality of base layers are all multi-layer structures, the plurality of base layers are synchronously and parallelly manufactured through the manufacturing process and production plan arrangement of the electrical connection layers in the base layers, and then the plurality of electrical connection layers are stacked and connected. Compared with the former, the manufacturing time can be effectively shortened to improve the work efficiency.

[0068] In an example, when the electrical connection layer 11 of the base layer 10 is a multi-layer structure, the method for forming the base layer 10 includes the following steps: providing a support layer; sequentially forming n initial electrical connection layers (not shown in the figure, please refer to 11a or 11b in FIG. 3 for understanding) above the support layer, and the n initial electrical connection layers are sequentially stacked from bottom to top to constitute the electrical connection layer, 1

[0069] Further, forming the n initial electrical connection layers comprises the following steps: coating a sub-medium layer on the support layer; forming a photoresist layer on the sub-medium layer; patterning the photoresist layer to form etching windows; using the patterned photoresist layer as a mask to etch the sub-medium layer to form openings; forming a conductive material layer in the sub-medium layer, the conductive material layer also filling into the openings; planarizing the conductive material layer to only retain the part filled in the openings as an electrical connection structure (at this point, an initial electrical connection layer is obtained), at this time, the obtained overall structure can be regarded as a basic layer when the electrical connection layer is a single-layer structure; repeating the above steps n times to obtain an electrical connection layer composed of n initial electrical connection layers. The reason for setting the value of n in the above interval is that, according to production and research and development experience, the current redistribution layer adopts a similar manufacturing method as the initial electrical connection layer, that is, continuously repeating the steps of coating a medium material, exposing and developing, and high-temperature baking to solidify the medium layer, and then filling the electrical connection unit, so that, with each additional electrical connection layer, the medium layer of the bottom layer is repeatedly baked for one layer. With the increase in the number of electrical connection layers, the number of times the bottom medium layer is baked increases, which affects its reliability, and under repeated high-temperature process conditions, the final manufactured redistribution layer has increased thermal expansion effect and increased warping deformation. Based on the current process conditions, the number of 6 layers is close to the limit of the structure and stability of the redistribution layer. After verification, considering the production efficiency, production cost and reliability factors, n is preferably 2 to 3 layers, at this time, the structure of the medium layer in the obtained electrical connection layer is not baked enough times to seriously affect its structure and performance stability, and the slight loss of reliability and the degree of warping are controllable.

[0070] In another example, when the electrically connecting layer 11 of the base layer 10 is a multi-layer structure, the method of forming the base layer 10 comprises the following steps: providing at least two initial layers (which can be understood in combination with the base layer structure shown in FIG. 2), the initial layers comprising an initial electrically connecting layer and an initial supporting layer below the initial electrically connecting layer; arranging the two initial layers with the initial electrically connecting layer of each facing the other; connecting the two initial electrically connecting layers and removing one of the initial supporting layers. This method is similar to grouping multiple initial layers (the number of initial layers in each group can be the same or different to adjust the specific structure of the redistribution layer and the production plan according to actual needs), stacking and connecting the initial electrically connecting layers of the initial layers in each group in turn, and removing the initial supporting layer in the initial layer corresponding to the initial electrically connecting layer when connecting each initial electrically connecting layer, thereby transferring the initial electrically connecting layer to the stacked part of the initial electrically connecting layer (for example, the method of stacking and connecting two electrically connecting layers of the base layer and then stacking a third base layer above the structure with two electrically connecting layers). In this way, it not only avoids multiple baking of the medium layer in each electrically connecting layer of the final packaging structure (the number of times of baking of each medium layer is only one time), so as to maximize the reliability and stability of the medium layer, but also ensures the synchronous connection of multiple groups of initial electrically connecting layers to improve production efficiency.

[0071] As an example, referring to FIG. 10, after the redistribution layer 100 is formed, the following steps are further included: providing a functional chip 200; connecting the functional chip 200 above the redistribution layer 100 to form a functional module; and connecting the functional module to a packaging substrate 400, wherein the redistribution layer 100 serves as an intermediate layer electrically connecting the functional chip 200 and the packaging substrate 400.

[0072] Further, the manufacturing method further comprises a step of forming a plastic encapsulation layer 300, which encapsulates the functional chip 200 to achieve insulation and protection.

[0073] As an example, the functional chip 200 comprises at least one of a CPU, a GPU, and a DRAM, or further comprises other suitable functional chips.

[0074] As an example, the connection mode between the functional chip 200 and the redistribution layer 100 and the connection mode between the functional module and the packaging substrate 400 both comprise Flipchip (i.e., conductive bumps are arranged on the connection surface of the functional chip 200 and the connection surface of the functional module), and further, the surface of the packaging substrate away from the functional module is also provided with conductive bumps to be electrically connected to an external structure.

[0075] The manufacturing method of the packaging structure of the embodiment splits and connects the multi-layer electrically connecting layers in the traditional multi-layer RDL structure, i.e. provides a plurality of base layers with electrically connecting layers (one or less layers of electrically connecting layers are manufactured on each support layer, which can ensure the performance of the electrically connecting layers without significantly increasing the process difficulty), and then connects the electrically connecting layers of each base layer. On the premise of manufacturing multi-layer RDL, it avoids the repeated high-temperature baking of part of the dielectric layers in the RDL layer, improves the working performance stability and reliability of the overall packaging structure by ensuring the stability and reliability of the dielectric layer structure, and can easily break through the upper limit of the number of RDL layers (the upper limit of the number of RDL layers in the traditional method is 6 layers, and the warping degree and reliability of RDL cannot meet the actual application after more than 6 layers), and meets the increasing demand for higher density and more layers of advanced packaging.

[0076] Embodiment two

[0077] The packaging structure of the embodiment is obtained by the manufacturing method of embodiment one or other suitable similar method. Referring to FIG. 10, it is shown as a cross-sectional schematic view of the packaging structure, which includes a redistribution layer 100. Referring to FIG. 9, the redistribution layer 100 includes at least two electrically connecting layers 11, and the two electrically connecting layers 11 are connected to each other.

[0078] As an example, the number of layers of the redistribution layer 100 is preferably greater than or equal to 6 layers (i.e. the number of electrically connecting layers it includes is greater than or equal to 6), and the specific number of layers is reasonably set based on actual needs, which can be 8 layers, 10 layers, 12 layers, etc. Of course, from the perspective of ensuring the structural stability and reliability of the dielectric layer in the redistribution layer to the greatest extent, the redistribution layer can also be less than 6 layers.

[0079] As an example, the packaging structure further includes a functional chip 200, a plastic encapsulation layer 300, and a packaging substrate 400. The functional chip 200 is connected to the redistribution layer 100 to form a functional module, the plastic encapsulation layer 300 encapsulates the functional chip 200, the functional module is connected above the packaging substrate 400, the functional chip 200 is electrically connected to the packaging substrate 400 based on the redistribution layer 100, and each connection mode includes Flipchip.

[0080] The packaging structure of the embodiment, which is obtained by the method of embodiment one or a similar method, has improved and enhanced working performance stability and reliability compared with the existing packaging structure with multi-layer RDL, and the manufacturing process is simple and suitable for low-cost and high-efficiency mass production.

[0081] In summary, the packaging structure manufacturing method of the present application, by splitting the multi-layer electrically connecting layer in the traditional multi-layer RDL structure, under the premise of manufacturing multi-layer RDL, avoids part of the medium layer in the RDL layer through repeated high-temperature baking, improves the working performance stability and reliability of the overall packaging structure by ensuring the stability and reliability of the medium layer structure, and can easily break through the upper limit of the current RDL layer number, meet the growing demand for higher density and more layers of advanced packaging. The packaging structure of the present application has improved and improved the working performance stability and reliability compared with the existing packaging structure with multi-layer RDL, and the manufacturing process is simple, suitable for low-cost and high-efficiency mass production. Therefore, the present application effectively overcomes the shortcomings of the prior art and has high industrial utilization value.

[0082] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical idea disclosed by the present application should be covered by the claims of the present application.

Claims

1. A method for manufacturing an encapsulation structure, characterized in that, The method comprises the following steps: providing a plurality of base layers, the base layers comprising an electrical connection layer and a support layer, the support layer being located below the electrical connection layer, the plurality of base layers comprising a first base layer and a second base layer; arranging the second base layer with the electrical connection layer on one side thereof to face the first base layer with the electrical connection layer on one side thereof; connecting the electrical connection layer of the second base layer to the electrical connection layer of the first base layer; removing the support layer of the second base layer to transfer the electrical connection layer of the second base layer to the first base layer.

2. The method of claim 1, wherein: The method for connecting the electrical connection layer of the second base layer to the electrical connection layer of the first base layer comprises at least one of a hybrid bonding method and a hot-press bonding method.

3. The method of claim 1, wherein: The base layer further comprises a release layer, the release layer being located between the support layer and the electrical connection layer.

4. The method of claim 3, wherein: The method for removing the support layer of the second base layer comprises laser debonding based on the release layer of the second base layer to separate the support layer of the second base layer from the electrical connection layer of the second base layer.

5. The method of claim 3, wherein: The base layer further comprises a protective layer, the protective layer being located between the release layer and the electrical connection layer.

6. The method of claim 1, wherein The plurality of base layers further comprises an i-th base layer, i being an integer greater than 2, and the manufacturing method further comprises the following steps: arranging the i-th base layer above the first base layer such that one side of the i-th base layer with the electrical connection layer faces one side of the first base layer with the electrical connection layer; connecting the electrical connection layer of the i-th base layer to the electrical connection layer of the i-1-th base layer transferred above the first base layer; removing the support layer of the i-th base layer to transfer the electrical connection layer of the i-th base layer above the first base layer, the electrical connection layer of the first base layer, the electrical connection layer of the second base layer, and the electrical connection layer of the i-th base layer being sequentially stacked and connected to form a redistribution layer.

7. The method of claim 1, wherein: The electrical connection layer comprises at least one of a single-layer structure and a multi-layer structure.

8. The method of claim 7, wherein When the electrical connection layer is a multi-layer structure, the method for forming the base layer comprises the following steps: providing a support layer; sequentially forming n initial electrical connection layers above the support layer, the n initial electrical connection layers being sequentially stacked from bottom to top to form the electrical connection layer, 1 9. The method of claim 7, wherein When the electrical connection layer is a multi-layer structure, the method for forming the base layer comprises the following steps: providing at least two initial layers, the initial layers comprising an initial electrical connection layer and an initial support layer located below the initial electrical connection layer; arranging the two initial layers with the initial electrical connection layer on one side thereof to face each other; connecting the two initial electrical connection layers and removing one of the initial support layers.

10. A package structure, characterized by: The packaging structure is obtained by the manufacturing method according to any one of claims 1-9, and the packaging structure comprises a redistribution layer, the redistribution layer comprising at least two electrical connection layers, the two electrical connection layers being connected to each other.

Images