Apparatus and method for continuous die bonding

Abstract

A system for die bonding comprising a donor stage configured to accept one or more donor dies and configured to move the one or more donor dies to different locations; an acceptor stage configured to provide one or more acceptor positions; a measurement system configured to measure a position of the one or more donor dies relative to the donor stage and configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and a processor system configured to drive, based on the measured position of the one or more dies and / or measured position of the one or more acceptor positions, at least the donor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.

Description

APPARATUS AND METHOD FOR CONTINUOUS DIE BONDINGCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority of EP application 24177402.5 which was filed on 22 May 2024 and which is incorporated herein in its entirety by references.TECHNICAL FIELD

[0002] The present disclosure relates generally to an apparatus and method for continuous die bonding.BACKGROUND

[0003] In manufacturing processes of integrated circuits (ICs), multiple finished or unfinished ICs (e.g., whole wafers, diced wafers, partially diced wafers, chips, die, etc.) may be placed in contact, stacked, bonded, or otherwise joined (e.g., to heterogeneous or homogeneous devices) at various points in the fabrication process. Heterogeneous integration, e.g., the integration of different circuits or other patterned devices, may rely upon joining of specific portions (for example, conductive contact elements) of multiple die — where these specific portions may be aligned in three-dimensional space to ensure functional connectivity. Alignment of these die, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., with each other may require different techniques than used for lithography during fabrication. As the physical sizes of IC components continue to shrink, and their structures continue to become more complex, accuracy and throughput in integration become more important. For applications such as heterogeneous integration, it may be desirable to obtain both accurate and fast placement of die with respect to one another. In the context of semiconductor manufacture, improvements in die placement and alignment (e.g., improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration abilities.SUMMARY

[0004] According to an embodiment a system for die bonding is provided, the system comprising: a donor stage configured to accept one or more donor dies and configured to move the one or more donor dies to different locations; an acceptor stage configured to provide one or more acceptor positions; a measurement system configured to measure a position of the one or more donor dies relative to the donor stage and configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and a processor system configured to drive, based on the measured position of the one or more dies and / or measured position of the one or more acceptor positions, at least the donor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the correspondingacceptor position.

[0005] According to another embodiment, one or more non-transitory, machine -readable medium is provided having instructions thereon, the instructions when executed by a processor being configured to perform a method as described herein.BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate one or more embodiments and, together with the description, explain these embodiments. Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:

[0007] Figures 1A-1D are schematic diagrams illustrating an exemplary die bonding method, according to one or more embodiments.

[0008] Figures 2A-2F are schematic diagrams illustrating an example method of die placement, according to one or more embodiments.

[0009] Figures 3A-3J are schematic diagrams illustrating portions of an example apparatus for die bonding, according to one or more embodiments.

[0010] Figures 4A-4D are schematic diagrams illustrating an example planar apparatus and method for continuous die placement, according to one or more embodiments.

[0011] Figures 5A-5B are schematic diagrams illustrating an example turret apparatus and method for continuous die placement, according to one or more embodiments.

[0012] Figure 6 is a schematic diagram illustrating an example tracked apparatus and method for continuous die placement, according to one or more embodiments.

[0013] Figures 7A-7D are schematic diagrams illustrating example shuttles for continuous die placement, according to one or more embodiments.

[0014] Figure 8 is a schematic diagram illustrating an example dual tracked apparatus and method for continuous die placement, according to one or more embodiments.

[0015] Figure 9 is a flowchart which illustrates an exemplary method of die placement, according to one or more embodiments.

[0016] Figure 10 is a flowchart which illustrates an exemplary method of continuous die placement, according to one or more embodiments.

[0017] Figure 11 is a block diagram of an example computer system, according to one or more embodiments of the present disclosure.DETAIEED DESCRIPTION

[0018] Embodiments of the present disclosure are described in detail with reference to the drawings, which are provided as illustrative examples of the disclosure so as to enable those skilled in the art topractice the disclosure. Notably, the figures and examples below are not meant to limit the scope of the present disclosure to a single embodiment, but other embodiments are possible by way of interchange of some or all of the described or illustrated elements. Moreover, where certain elements of the present disclosure can be partially or fully implemented using known components, only those portions of such known components that are necessary for an understanding of the present disclosure will be described, and detailed descriptions of other portions of such known components will be omitted so as not to obscure the disclosure. Embodiments described as being implemented in software should not be limited thereto, but can include embodiments implemented in hardware, or combinations of software and hardware, and vice-versa, as will be apparent to those skilled in the art, unless otherwise specified herein. In the present specification, an embodiment showing a singular component should not be considered limiting; rather, the disclosure is intended to encompass other embodiments including a plurality of the same component, and vice-versa, unless explicitly stated otherwise herein. Moreover, applicants do not intend for any term in the specification or claims to be ascribed an uncommon or special meaning unless explicitly set forth as such. Further, the present disclosure encompasses present and future known equivalents to the known components referred to herein by way of illustration.

[0019] Although specific reference may be made in this text to the manufacture of ICs, it should be explicitly understood that the description herein has many other possible applications. For example, it may be employed in the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal display panels, thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” in this text should be considered as interchangeable with the more general terms “substrate” and “target portion”, respectively. The term “wafer” may be used generally to refer to a large unit of manufacture (which may be the largest unit of manufacture), while the term “die” may be used to refer to a smaller unit of manufacture which may correspond to a lithography pattern, a portion of a lithography pattern, multiple lithography patterns, etc. A “die” may correspond to a portion of “wafer” — that is a “die” may be produced by dicing or otherwise dividing a “wafer”. The term “die” should be considered as interchangeable with the term chip, chiplet, or other terms for IC divisions. A patterning device (for example, a lithography device) can comprise, or can form, one or more patterns, which may correspond to one or more die. The patterns can be generated utilizing CAD (computer-aided design) programs, based on a pattern or design layout, this process often being referred to as EDA (electronic design automation).

[0020] As used throughout this application “or”, unless indicated otherwise, takes a non-exclusive meaning, e.g., encompassing both “and” and “or”. “Each”, “every”, “all”, “corresponding”, “individual” and other relational terms encompass substantially “each”, “every”, “all”, etc., including cases in which each, every, all, corresponding, individual, etc. may include relationship which are not one-to-one, or do not include every possible item. For example, every may exclude items, such asitems determined to be defective during testing. Each may exclude items, such as edge items, which are not used. All may exclude items, such as excess items. Corresponding may not require that items correspond in an exactly one to one manner. For example, a first item may correspond to two of a second item or vice versa. In some cases, individual may refer to multiple of an item, such as each item A has individual item B, where an item A may have two of an item B.

[0021] As used throughout this application “continuous” (and its grammatical conjugates) does not require that a process (e.g., placement, movement, measurement, bonding, etc.) or apparatus (e.g., tool) be without any interruption (e.g., pause, delay, etc.), slow down (e.g., change in process speed, change in speed of transport between process, etc.), hold (e.g., rest at a location during which a process is not performed), emergency or other stop (e.g., for safety reasons (e.g., EMO), for reset of one or more process, element, supply, etc.), etc. Continuous instead implies that given process is generally performed without large interruptions or static stops such that multiple sub-processes may be performed, including at different rates of speed, intervals, number of increments, etc., within the same process, tool, or apparatus. As used herein, continuous may imply that one or more item (such as a first die) is undergoing a first sub-process while another one or more item (such as a second die) is undergoing a second sub-process, such that each of the items (e.g., the first die and the second die) are moving through the process (of which the first sub-process and the second sub-process are parts) without interruption of the process, such as for loading of a batch of one or more items, movement between tools, loading into or out of a carrier (such as a FOUP), etc. Continuous may imply that the process or apparatus is not a batch process (that is, not a process in which a batch of items are processed from beginning to end before another batch of items are introduced to the process or apparatus), but does not require that items be processes singularly (e.g., one by one). That is, continuous includes instances in which multiple batches (or groups) of items are processed concurrently, including simultaneously with other batches (e.g., groups) of items. For example, a first batch of items (e.g., a first set of die) may undergo the first sub-process, while a second batch of items (e.g., a second set of die) undergoes the second sub-process.

[0022] Reference is now made to Figures 1A-1D, which are schematic diagrams illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted in relation to a reference set of axes, which are consistent through the schematic illustrations. The reference axes are provided for ease of description only and are not to be taken as limiting. Included methods and apparatuses may instead be described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin point (e.g., an origin point in the donor die, an origin point in the target, origin point in between the donor die and target, etc.), or a different orientation. The reference set of axes is chosen such that the fabrication plane of the die (i.e., a substrate surface) lies in the x-y plane and where the fabrication direction is parallel or antiparallel to the z-axis for both the donor die and target locations.

[0023] As shown in Figures 1A-1D, the exemplary die bonding method may involve a donor die 102and a target die 104. Herein, the term “donor” and the term “target” are used for ease of description. It should be understood that the term “donor” and the term “target” are provided for reference and are relative descriptions, and that elements described as corresponding to a “donor” can instead correspond to a “target” and vice versa. A target die may also or instead be called an acceptor die. Further, while just one donor die and target die are depicted in Figure 1 A, it will be appreciated that there may be multiple such die and that multiple donor die may be essentially simultaneously bonded with multiple target die, e.g., where, for example, multiple die are still part of (all or part) a substrate in or on which they are formed.

[0024] The donor die 102 may have one or more electrically active areas 106, such as on an alignment face of the donor die 102. The one or more electrically active areas 106 may be conductive, such as metal. The one or more electrically active areas 106 may correspond to one or more vias (e.g., one or more through silicon vias (TSVs)), one or more electrical contact lines, one or more contact pads, one or more packaging pads, or other one or more electrically conductive areas. The donor die 102 may have one or more electrically inert areas (for example, an electrically insulating area) outside of the one or more electrically active areas 106, such as on the alignment face of the donor die 102. The one or more electrically active areas 106 may be recessed (as shown) with respect to one or more other surfaces of the donor die 102. The one or more electrically active areas 106 may correspond to one or more contacts (e.g., to source, to drain, to gate, etc.) to one or more electrical devices within the donor die 102 (not shown). The target die 104, likewise, may have one or more electrically active areas 108, which may have one or more similar properties to the one or more electrically active areas 106.

[0025] The donor die 102 may also or instead have one or more doped areas 110, such as on an alignment face of the donor die 102, recessed below the alignment face of the donor die 102, etc. While the term “doped” is used, it should be understood that the one or more doped areas 110 may be any areas which, through the course of fabrication, come to have one or more different electrical characteristics than the bulk of the substrate (e.g., silicon wafer). The one or more doped areas 110 may correspond to source, drain, gate, ground, or other areas of a circuit which is doped or otherwise altered (e.g., through implantation, oxide growth, thin film deposition, etc.) to have a different electrical characteristic than the bulk of the substrate. The one or more doped areas 110 may include one or more conductive layers (e.g., one or more highly doped or electrically conductive layers) and / or one or more insulative layers (e.g., one or more oxide layers). The donor die 102 may have one or more undoped areas (for example, an area where the substrate retains the characteristic of the bulk substrate) outside of the one or more doped areas 110, such as on the alignment face of the donor die 102. The one or more doped areas 110 may be recessed, buried, coplanar (as shown), etc. with respect to one or more other surfaces of the donor die 102. The one or more doped areas 110 may correspond to one or more regions (e.g., to one or more source regions, one or more drain regions, one or more gate regions, one or more dielectric regions, etc.) of one or more electrical devices within the donordie 102 or one or more regions which may form one or more electrical devices across both the donor die 102 and the acceptor die 104 once those die are bonded. The target die 104, likewise, may have one or more doped areas 112, which may have one or more similar properties to the one or more doped areas 110.

[0026] As shown in Figures 1A and IB, the exemplary die bonding method may involve alignment of at least one of the electrically active areas 106 and / or doped areas 110 of the donor die 102 with at least one of the electrically active areas 108 and / or doped areas 112 of the target die 104. The exemplary die bonding method may involve bringing the donor die 102 into contact with the target die 104 while maintaining alignment between, e.g., one or more electrically active areas 106 and one or more electrically active areas 108 so that the one or more electrically active areas 106 and the one or more electrically active areas 108 may be joined for cross-die electrical communication. The exemplary die bonding method may involve aligning one or more doped areas 110 of the donor die 102 with one or more doped areas 112 of the target die 104. Aligning may encompass bringing into contact, aligning one or more edges of various regions, having overlap, having non-overlap, or any other appropriate alignment scheme. The exemplary die bonding method may involve applying or maintaining pressure between the donor die 102 and the target die 104, while bonding occurs between the donor die 102 and the target die 104. The donor die 102 may be supported by a carrier structure 114, which may be a substrate which is at least partially transparent to a range of radiation (e.g., infrared radiation, a portion of the optical spectrum, etc.). The target die 104 may likewise be supported by a carrier structure 116, which may or may not be transparent to a range of radiation. The alignment may be complicated by the multiple layers of the donor die 102 or the multiple layers of the target die 104, which may be optically opaque.

[0027] Figures 1A and IB depict a cross-sectional view of portions of the exemplary die bonding method showing relative positioning between the donor die 102 and the target die 104. As shown in Figure 1A, the donor die 102 and the target die 104 may be brought together along the z-axis, while the position of the donor die 102 or the target die 104 may be adjusted in the x-y plane (e.g., perpendicular to the z-axis of approach), such as to improve alignment between the donor die 102 and the target die 104. As shown in Figure IB, alignment can be achieved between, e.g., one or more electrically active areas 106 and one or more electrically active areas 108 and / or between one or more doped areas 110 of the donor die 102 with one or more doped areas 112 of the target die 104.

[0028] Once aligned, the donor die 102 and the target die 104 are bonded together. The bonding may include placement of the donor die 102 on the target die 104 (or vice versus), including through radiation-mediated transfer. In an embodiment, the bonding is a direct or fusion bonding (e.g., involving van der Waals forces). In an embodiment, the bonding is an intermolecular bonding, e.g., van der Waals bonding. In an embodiment, the bonding may include covalent, ionic, or metallic (e.g., chemical) bonding, e.g., hydrogen bonding. In an embodiment, the bonding is aided by a material (e.g., a suitable bonding or adhesive material) applied to an alignment surface of the donor die 102and / or target die 104 or provided to a gap between the donor die 102 and the target die 104 (e.g., in the form of gas or liquid). In some embodiments, physical contact between the donor die 102 and the target die 104 may include bonding, such as through a bonding wavefront generated by contact (or atomic level proximity), such as of a surface prepared for hydrogen bonding.

[0029] As shown in Figure IB, the donor die 102 and the target die 104 may be annealed after contact as depicted by the wavy lines (while wavy lines are shown here at both the donor die 102 and the target die 104, the annealing agent need not be provided at both the donor die 102 and the target die 102 nor needs to be applied in the direction(s) shown). Annealing may be or include heat annealing, electrical annealing, electrostatic processes, etc. In some embodiments, annealing may include annealing of in-plane (or prominent) regions that are bonded and / or annealing of one or more recessed areas which may increase the volume of fill in a recess area (such as through thermal expansion, capillary force, etc.) and may cause physical contact and bonding of areas previously not in contact. As shown in Figure 1C, annealing may cause physical or chemical changes, such as in the one or more electrically active areas 106 of the donor die 102 or in the one or more electrically active areas 108 of the target die 104, which may cause or improve physical contact or electrical contact between an electrically active area 106 and an electrically active area 108. Annealing may therefore produce or enhance electrical connectivity between elements of the donor die 102 and the target die 104 (e.g., integration). This electrical connectivity may occur even if an electrically active area 106 and an electrically active area 108 differ — for example, have different recessed depths, are made up of different materials, have different dimensions, etc. In an embodiment, the prior bonding described with respect to Figure 1A may be temporary during one or more portions of the annealing process, wherein the annealing process forms tight connections between donor die 102 and the target die 104. In an embodiment, the annealing may occur in the system where the bonding occurs. In an embodiment, the annealing may occur in a separate system from the system in which the bonding occurs, e.g., the donor and target dies are transported out of the bonding system into an annealing system which can include one or more heating elements (e.g., one or more electrical heating elements, one or more elements to provide radiation heating, etc.) to provide the heat for the annealing.

[0030] Once the donor die 102 and the target die 104 are bonded, the carrier structure 114 may be removed as shown in Figure IB. Additionally or alternatively, the carrier structure 116 may be removed then as well. Alternatively, once the donor die 102 and the target die 104 are annealed, the carrier structure 116 may be removed as shown in Figure 1C. Additionally or alternatively, the carrier structure 114 may be removed then as well.

[0031] Figure ID depicts a plan view of an example die bonding method according to this disclosure. As shown in Figure ID, the donor die 102 and the target die 104 may have one or more alignment marks along the x-y plane to facilitate alignment of the die as a whole. Alignment marks in the x-y plane of a die (e.g., one or more alignment marks 120 on the donor die 102 or one or more alignment marks 122 on the target die 104) may reduce the area available for circuitry. One or more alignmentmarks may be placed in a waste area, such as an area between chips, which may then be destroyed (e.g., removed) during dicing. Dicing herein refers to mechanical separation of areas of a substrate (e.g., a unit of manufacture) into smaller areas (e.g., dies or chips) which may contain one or more units of operation (e.g., a logic device, a memory unit, etc.). Dicing may operate using any appropriate method — for example, scribing and breaking, mechanical sawing, laser cutting, etc. — and may destroy (e.g., grind to powder or otherwise render inoperable for circuitry placement) a non-zero linewidth portion of the substrate volume when separating die. Alignment marks may be additively or substractively fabricated, such as by etching or deposition in the z-direction. Alignment marks 120 and 122 may be the same or different. Alignment marks 120 and 122 may be a multi-directional alignment mark, i.e., capable of determining alignment in more than one direction, such as a bidirection alignment mark, an example of which is shown as mark 120 in Figure ID. The alignment mark 120 and / or alignment mark 122 may be a fine alignment mark, such as for alignment in the pm scale. The alignment mark 120 may be located on the donor die 102 while the target die 104 may have an alignment mark 122 located in a waste area, or vice versa. Alternatively or additionally, one or more electrically active and / or doped areas of the donor die 102 or one or more electrically active and / or doped areas of the target die 104 (not shown in Figure ID) or other surface features may function as a reference for alignment (e.g., an alignment mark) of the donor die 102 and / or the target die 104.

[0032] The donor die 102 and the target die 104 may be aligned in up to three dimensions before or during contact between the donor die 102 and the target die 104. For example, the donor die 102 or the target die 104 may be positioned in the x-y plane as the donor die 102 in the target die 104 are contacted. The donor die 102 or the target die 104 may be positioned by operation of a die actuator or other die-scale elements, such as by piezoelectric stepper elements, or by operation of a chuck or other carrier structure-scale elements, such as by a motor or other actuator. The position of the donor die 102 or the target die 104 may be adjusted with respect to up to six degrees of freedom. For example, given an origin point at a central part of the donor die 102, the donor die 102 may be positioned by movement along the X axis (e.g., in a positive or negative X direction), along the y-axis (e.g. in a positive or negative Y direction), along the z-axis (e.g., in a positive or negative Z direction). The donor die 102 may also be positioned rotationally with respect to each of those axes — e.g., rotated with respect to the x-axis, rotated with respect to the y-axis, rotated with respect to the z-axis. That is, the donor die 102 may be positioned by free movement in space accounted for by six different types of movement (where the movements listed above are provided as examples but where the movements may be described by other axes). Of course, the target die 104 may be positioned alone or combined with positioning of the donor die 102. Positioning or adjustment of position herein, unless the context otherwise requires, includes displacement, rotation or any combination thereof.

[0033] In some embodiments, the donor die 102 and the target die 104 may be measured with respect to a reference plane or structure (e.g., the X-Y plane), including with respect to the same referenceplane or structure, but the donor die 102 or the target die 104 may be flipped (before or after measurement) so that the fabrication surface of the donor die 102 and the fabrication surface of the target die 104 may be bonded (see, e.g., the bottom diagram of Figure ID). The one or more alignment marks (e.g., the alignment marks 120 and 122) may be on the fabrication surface of the donor die 102 and the target die 104, respectively. Once the donor die 102 or the target die 104 is flipped, one or more alignment marks may be rendered invisible (such as due to opacity of a die) to an alignment measurement tool. The alignment of the flipped die may therefore be performed based on previously measured positions of the die (e.g., of the one or more alignment marks of the die) with respect to a structure, such as the donor die 102 with respect to the carrier structure 114 or such as the target die 104 with respect to the carrier structure 116.

[0034] Figures 2A-2F are schematic diagrams illustrating an example method of die placement. Figures 2A-2F are described with reference to “donor die” (and “donor substrate” containing multiple “donor die”) and “target die” (and “target substrate” containing multiple “target die”), which are relative descriptors and donor die may instead be target die and vice versa. Figures 2A-2F are described with respect to donor die and target die but may instead be a donor substrate or target substrate, where a “substrate” may contain multiple “die”, including un-diced (e.g., unseparated) die in the form of all or part of a semiconductor wafer. Figure 2A-2F are cross-sectional views of die placement of donor dies (e.g., donor die 202A, 202B, 202C) on target dies (e.g., target die 204A and target die 204B). In some embodiments, multiple steps which are depicted as occurring substantially simultaneously in Figures 2A-2F may be performed sequentially. In some embodiments, multiple steps which are depicted as occurring sequentially in Figures 2A-2F may be performed substantially simultaneously. In some embodiments, multiple donor dies may be aligned or placed on their respective target dies substantially simultaneously, including donor dies which are proximate (including adjacent) or distant (e.g., non-adjacent but within the same target substrate). In some embodiments, steps may be performed in a different order.

[0035] Figure 2A is a cross-sectional view of donor dies 202A-202C which are to be placed on target dies 204A-204B. The donor dies 202A-202C are supported by a carrier structure 214. The donor dies 202A-202C may be adhered to the carrier structure 214 in any appropriate manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, van der Waals adhesion, mechanical interlocking, surface reaction, static friction, gravitational force, etc. The donor dies 202A-202C may be adhered to the carrier structure 214 by use of, for example, an adhesive (e.g., glue), such as an organic, polymer glue. The carrier structure 214 may be a transparent substrate, such as glass, sapphire, polymer, etc. substrate. The donor dies 202A-202C may be placed on the carrier structure 214 by any appropriate method, such as by a pick and place tool. The carrier structure 214 may be supported by a chuck or any other appropriate support structure.

[0036] The target dies 204A-204B are supported by a support structure 216. In an embodiment, the target dies 204A-204B may be part of an undiced or partially diced target wafer. The target dies204A-204B may be adhered to the support structure 216 in any appropriate manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, mechanical interlocking, surface reaction, static friction, gravitational force, etc. The target dies 204A-204B may be adhered to the support structure 216 by use of, for example, an adhesive (e.g., glue), such as an organic, polymer glue. In an embodiment, where, for example, the target dies 204A-204B are diced die, the support structure may be a carrier structure (e.g., like carrier structure 214) and may be a transparent substrate, such as glass, sapphire, polymer, etc. substrate. The target dies 204A-204B may be placed on the support structure 216 by any appropriate method, such as by a pick and place tool. The support structure 216 may be, or may be supported by, a chuck or any other appropriate structure.

[0037] The donor dies 202A-202C and the target dies 204A-204B may be aligned with one another at alignment points 203 A and 205 A (for donor die 202A and target die 204 A), alignment points 203B and 205B (for donor die 202B and target die 204B), and alignment points 203C and 205C (for donor die 202C and target die 204B). In some embodiments, multiple donor die may be placed on a single target die, and vice versa, such as depending on integration goals. The alignment points 203A-203C are depicted for the donor dies 202A-202C, while the alignment points 205A-205C are depicted for the target dies 204A-204B. These alignment points are provided for ease of description only and need not be physical features. There may be multiple alignment points per die. The alignment points may be alignment marks (for example, the alignment marks of Figure ID), die edges, die corners, other features on edges or surfaces of die. The alignment points may be used to align donor and target die, such as by measurement of the locations of various alignment points and then adjustment of the position of the donor and / or target die, such as by movement of a carrier structure supporting the die, to align an alignment point of the donor die with an alignment point of the target die (or vice versa). The alignment points may be aligned directly to one another (e.g., as depicted in Figures 2A-2F). In some embodiments, the alignment points may be aligned relative to one another (e.g., in a predetermined relationship, such as separated by a vector), such as depicted in the bottom of Figure ID, where the alignment marks are non-overlapping.

[0038] In Figure 2 A, the carrier structure 214 (and / or the structure 216) may be positioned, such as in the X-Y plane, in order to align the alignment point 203A of the donor die 202A with the alignment point 205A of the target die 204A.

[0039] In Figure 2B, the donor die 202A may be released from the carrier structure 214 by any appropriate mechanism, such as release mechanism 230A, which may be radiation-mediated release, electrostatic release, deformation and / or detent release, or any other appropriate release mechanism. The donor die 202 A meets the target die 204 A at alignment point 207 A. The release of the donor die 202A may be facilitated by gravity, by electrostatic forces, by physical forces, etc. The alignment of the donor die 202 A and the target die 204 A at the alignment point 207 A (which represents a combination of the alignment point 203A and the alignment point 205A of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment (e.g., attraction of onearea of the donor die 202A to a corresponding area of the target die 204A). In an embodiment, the release occurs while donor die 202A is in (at least partial) contact with target die 204A. In an embodiment, the release occurs before donor die 202A is in contact with the target die 204A.

[0040] In Figure 2C, the carrier structure 214 (and alternately or additionally the structure 216) may be moved to bring another donor die (e.g., the donor die 202C) into alignment with another target die (e.g., the target die 204B). The alignment of alignment point 203C (of donor die 202C) and alignment point 205C (of target die 204B) may be based on measurements of the relative positions of the alignment points (such as using an alignment mark or feature on a die or carrier structure, using a position of an alignment point on another donor or target die, etc.). The alignment of alignment point 203C (of donor die 202C) and alignment point 205C (of target die 204B) may be based on one or more substantially simultaneous measurement of the relative positions of an alignment point, such as using an alignment mark or feature of a die or carrier structure, using an alignment target or feature of another donor or target die, etc. Although alignment of only one donor die (e.g., the donor die 202C) and target die (e.g., the target die 204B) is depicted, alignment of one or more sets of donor and target dies may occur substantially simultaneously, such as if for a given relative position of the carrier structure 214 and the support structure 216 the alignment points of multiple donor dies are aligned with the alignment points of multiple target dies. However, the ability to place multiple donor dies substantially simultaneously may depend on the placement of the donor dies on the carrier structure 214 and the ability of the release mechanism to release multiple donor dies.

[0041] In Figure 2D, the donor die 202C may be released from the carrier structure 214 by any appropriate mechanism, such as release mechanism 230C. The donor die 202C meets the target die 204B at alignment point 207C. The release of the donor die 202C may be facilitated by gravity, by electrostatic forces, by physical forces, etc. The alignment of the donor die 202C and the target die 204B at the alignment point 207C (which represents a combination of the alignment point 203C and the alignment point 205C of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment. In an embodiment, the release occurs while donor die 202B is in (at least partial) contact with target die 204B. In an embodiment, the release occurs before donor die 202B is in contact with the target die 204B.

[0042] In Figure 2E, the carrier structure 214 (and alternately or additionally the structure 216) may be moved to bring another donor die (e.g., the donor die 202B) into alignment with another target die (e.g., the target die 204B). The alignment of alignment point 203B (of donor die 202B) and alignment point 205B (of target die 204B) may be based on previous measurements of the relative positions of the alignment points (such as using an alignment mark on a die or carrier structure, using an alignment point on another donor or target die, etc.). The alignment of alignment point 203B (of donor die 202B) and alignment point 205B (of target die 204B) may be based on one or more substantially simultaneous measurement of the relative positions of an alignment point, such as using an alignment mark or feature of a die or carrier structure, using an alignment target or feature ofanother donor or target die, etc. As depicted, the donor die 202B and the donor die 202C are aligned to the same target die (e.g., the target die 204B). In some embodiments, the donor die are placed on the target die in a substantially one-to-one relationship (e.g., as depicted for the donor die 202A and the target die 204 A). In some embodiments, multiple donor die (or target die) may be placed on the same target die (or donor die). In some embodiments, multiple donor die (or target die) may be placed on un-diced (e.g., unseparated) target die (or donor die), such as all or part of a substrate containing target die (or donor die). In some embodiments, a donor die may be placed on a target die that has multiple die, including stacked (e.g., bonded) die, such as in a three layer die bonding stack.

[0043] In Figure 2F, the donor die 202B may be released from the carrier structure 214 by any appropriate mechanism, such as release mechanism 230B. The donor die 202B meets the target die 204B at alignment point 207B. The release of the donor die 202B may be facilitated by gravity, by electrostatic forces, by physical forces, etc. The alignment of the donor die 202B and the target die 204B at the alignment point 207B (which represents a combination of the alignment point 203B and the alignment point 205B of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment. In an embodiment, the release occurs while donor die 202B is in (at least partial) contact with target die 204B. In an embodiment, the release occurs before donor die 202B is in contact with the target die 204B.

[0044] Figures 3A-3J are schematic diagrams illustrating portions of an example apparatus for die bonding. Figures 3A-3J are described with reference to “donor die” and “target die”, which are relative descriptors as used herein and donor die may instead be target die and vice versa. Each of Figures 3A, 3C, 3E, 3G, and 31 is a plane view of an apparatus during placement of donor die on the target die. Each of Figures 3B, 3D, 3F, 3H, and 3 J is a cross-sectional view of the apparatus during placement of donor die on the target die. The views of the apparatus in various figures represent different operations of the apparatus, but operations depicted as occurring in different figures may occur at different times or may instead be performed simultaneously and operations depicted as occurring in the same figure may instead be performed individually or at different times. A donor substrate 300 and a target substrate 350 are depicted as circular, but may instead be any appropriate shape, including rectangular, square, etc. The donor substrate 300 (and target substrate 350) may be the substrate in or on which the donor die (target die) have been formed. The donor substrate 300 (target substrate 350) may be a “reconstructed wafer”, in which donor die (target die) (or other disparate portions of a semiconductor substrate) are arranged or supported on a carrier structure, e.g., to be in position suitable for die bonding. So, the donor substrate 300 (target substrate 350) may be a carrier structure and donor die (target die), where the donor die (target die) may be held (e.g., adhered) to the carrier structure by any appropriate method, such as by gravitational force, by adhesive (e.g., organic, polymer adhesive), by electrostatic forces, etc. The donor substrate 300 (target substrate 350) may contain previously tested donor die (target die), such as donor die (target die) that passed a failure analysis or other post fabrication testing. The donor substrate 300 (target substrate350) may contain donor die (target die) from the same or different semiconductor substrates (e.g., fabrication substrates), including donor die (target die) of different types, different dimensions, etc. The donor substrate 300 (target substrate 350) may have donor die (target die) placed on the donor substrate 300 (target substrate 350) by any appropriate method, such as a pick and place tool. The donor substrate 300 (target substrate 350) may be supported, such as by a carrier structure, vacuum chuck, electrostatic chuck, etc., by either a top side (e.g., fabrication face) or backside (e.g., bulk substrate or carrier structure face) or by different faces at various points. The donor substrate 300 or donor die (target substrate 350 or target die) may have fabricated devices on multiple faces, such as through silicon vias (TSVs), contact pads, etc., such that both a top side and backside are fabrication faces.

[0045] In Figure 3A, the donor substrate 300 may be placed on a substrate chuck 320A. The substrate chuck 320A may be an appropriate substrate chuck, such as to support the donor substrate 300 in the form of a semiconductor substrate or a carrier structure of the donor substrate 300. The substrate chuck 320A may be supported by a support structure 322A. The support structure 322A may be a moveable support structure, which may move in the X-Y plane, such as from a first position where the substrate chuck 320A receives the donor substrate 300 to a second position where the donor substrate 300 may be subjected to metrology. The substrate chuck 320A may contain (e.g., support) one or more die actuators or other mechanical or electrical actuators which may move a donor die or the donor substrate 300 in one or more dimension, including in the X-Y plane, in the Z-direction, rotationally, etc. The substrate chuck 320A may have one or more alignment marks, such as to allow a camera or other measurement system to track the position of the substrate chuck 320A. The substrate chuck 320 A may have multiple sets of alignment marks, such as coarse alignment marks and / or fine alignment marks. The substrate chuck 320A may move, such as by action of the support structure 322A, from one position to another, in free space, etc. The support structure 322A may be configured to move in multiple directions and in multiple scales (e.g., in a coarse step and a fine step), such as by multiple motors or steppers. The support structure 322A may be activated by a controller of the example apparatus — where the controller of the example apparatus (not depicted) may also control the placement of the donor substrate 300 on the substrate chuck 320A and other operations described herein.

[0046] The substrate chuck 320A may have a measurement point (or alignment point), such as identified by a cruciform measurement mark 327 and a round zero measurement mark 328, which are provided merely as examples and where any appropriate zero measurement mark may be used. The measurement point may be used to place the donor substrate 300 on the substrate chuck 320A, such as during movement of the substrate onto the chuck (for example, by insertion of the donor substrate by a substrate handler). The measurement point may be used to measure relative positions of the donor die of the donor substrate 300 once the donor substrate 300 is placed on the substrate chuck 320A. The placement of the donor die may be measured, such as with up to nm precision, with respect to themeasurement point. The measurement of the position of the donor die after their placement may be obtained from any appropriate measurement system, such as optical microscopy, reflectometry, etc.

[0047] Figure 3 A also depicts a further substrate chuck 320B on a support structure 322B. The substrate chuck 320B may be any appropriate substrate chuck, such as substantially identical to the substrate chuck 320A. The support structure 322B may be any appropriate support structure, such as substantially identical to the support structure 322A. In some embodiments, the substrate chuck 320B and the substrate chuck 320A may be substantially indistinguishable. In some embodiments, the support structure 322B and the support structure 322A may be substantially indistinguishable. Although two substrate chucks and two support structures are depicted, in some embodiments more or less substrate chucks and support structures may be present in the apparatus. Operations depicted as performed by the substrate chuck 320B (substrate chuck 320A) may instead or additionally be performed by any appropriate substrate chuck. Likewise, operations depicted as performed by the support structure 322B (support structure 322A) may instead or additionally be performed by any appropriate support structure.

[0048] Figure 3A also depicts flipper 330. The flipper 330 may be any appropriate apparatus which may flip a substrate (e.g., donor substrate 300), such as about the longitudinal axis or plane of the donor substrate 300 depicted in Figure 3A. The flipper 330 will be described in more detail in reference to Figures 3E and 3F.

[0049] In Figure 3B, a cross-sectional view of a donor substrate 300 is depicted. The donor substrate 300 comprises a carrier structure 314 which supports one or more donor die (e.g., donor die 302A- 302C). The substrate may have one or more alignment points, such as alignment point 315, used to measure a relative position of the donor die 302A-302C with respect to the carrier structure. The donor die may have alignment points, such as alignment points 303A-303C for donor die 302A-302C, respectively. The alignment points are provided as schematic representations in these drawings for ease of description, and may be any appropriate alignment points, including alignment marks, fabricated features, edge features, etc., as previously described. While the donor substrate 300 is on a substrate chuck (e.g., the substrate chuck 320A of Figure 3A), the positions of the donor die (e.g., the donor die 302A-302C) are measured, such as by metrology tool 340A. The positions may be measured as absolute positions, relative positions, positions relative to other die, positions relative to an alignment point of the substrate, etc. The measured positions may be stored by a controller of the apparatus, such as for later positioning of the donor substrate 300. The metrology tool 340A may be a camera, including a still camera, a video camera, etc. The metrology tool 340A may be any appropriate tool for measurement of a position of a donor die, measurement of a position of an alignment point of the donor die, measurement of a position of alignment mark of the donor die, etc.

[0050] In Figure 3C, the donor substrate 300 is supported by the substrate chuck 320A, which is supported by the support structure 322A. Once the position of the donor dies are measured, the substrate chuck 320A may be moved, such as out of the measurement position. The support structure322A may move (e.g., along direction 324) to the position of the support structure 322B, while the support structure 322B may move (e.g., along direction 323) to the position of the support structure 322A. The positions are provided as examples, and the support structures may move to different positions. For example, in some embodiments, the support structure 322B may move to a loading position, such as to receive a target substrate (e.g., the target substrate 350). The substrate chuck 320A may then occupy another position in the apparatus (e.g., a bonding position, a flipping position, etc.). The position the substrate chuck 320A moves to after measurement of the positions of the donor die (e.g., after the measurement depicted in Figure 3B) may be configured to allow the flipper 330 to accept the donor substrate 300 from the substrate chuck 320A.

[0051] In Figure 3D, the movement of the donor substrate 300 to a position other than the measurement position of Figure 3B is depicted. The movement may correspond to the movement of the donor substrate 300 in the direction 324, such as by movement of the support structure 322A, of Figure 3C. This figure is provided to show continuity of the die bonding process in both plane and cross-sectional views but may occur substantially simultaneously with the process depicted in Figure 3C or Figure 3E, where, as previously described, steps which are depicted as occurring separately, including sequentially, may be performed substantially simultaneously.

[0052] In Figure 3E, the target substrate 350 may be placed on a substrate chuck 320B. The substrate chuck 320B may be an appropriate substrate chuck, as previously described. The substrate chuck may be supported by a support structure 322B, which may be any appropriate support structure, as previously described.

[0053] In Figure 3E, the donor substrate 300 may be transferred to the flipper 330. The flipper 330 may accept (e.g., take) the donor substrate from the substrate chuck 320A, such as by use of edge clamps, vacuum clamps, finger prongs, etc. The flipper 330 may hold the donor substrate by one or more edges (e.g., one or more edges of the carrier structure 314) or one or more sides (for example, a backside of the carrier structure 314 which does not support the donor die). The flipper 330 may rotate the donor substrate 300 upside down (e.g., with respect to the direction of the gravitational force). The flipper 330 may hold the donor substrate 300 upside down (e.g., opposite to) with respect to the X-Y plane which it previously occupied — or in any other appropriate direction. The flipper 330 may hold the donor substrate 300 or place the donor substrate 300 into a support structure, such that the donor substrate 300 faces the plane of the target substrate 350. The flipper 330 may rotate or displace the donor substrate 300 in the X-Y plane, as well as displace or rotate the donor substrate 300 out of the X-Y plane. The flipper 330 may be any appropriate rotational or translational apparatus.

[0054] In Figure 3F, a cross-sectional view of the target substrate 350 is depicted. The target substrate 350 comprises a carrier structure 316 which supports one or more target dies (e.g., target die 304A-304C). The substrate may have one or more alignment points, such as alignment point 317. The target die may have alignment points, such as alignment points 305A-305C for target die 304A-304C, respectively. The alignment points are provided as schematic representations in these drawings forease of description, and may be any appropriate alignment points, including alignment marks, fabricated features, edge features, etc., as previously described. While the target substrate 350 is on the substrate chuck (e.g., the substrate chuck 320B of Figure 3E), the positions of the one or more target dies (e.g., the target die 304A-304C) are measured, such as by metrology tool 340B. The metrology tool 340B may be the same as the metrology tool 340A used to measure the positions of the one or more donor dies (e.g., the donor die 302A-302C of Figure 3B) or a different metrology tool. The metrology tool 340B may measure a different number of positions, substantially different positions (e.g., arranged differently on the target substrate 350 than the positions on the donor substrate 300 as measured by the metrology tool 340 A), different positions relative to dies (e.g., the donor die 302A-302C versus the target die 304A-304C), etc. than the metrology tool 340A. The positions may be measured as absolute positions, relative positions, positions relative to other die, positions relative to an alignment point of the substrate, etc. The measured positions may be stored by a controller of the apparatus, such as for later positioning of the target substrate 350. The metrology tool 340B may be a camera, including a still camera, a video camera, etc. The metrology tool 340B may be any appropriate tool for measurement of a position of a donor die, measurement of a position of an alignment point of the donor die, measurement of a position of alignment mark of the donor die, etc. The target substrate 350 may experience deformation due to the holding by a substrate chuck, etc. The metrology tool 340B may also enable determination of deformation of the target substrate by measuring locations. A controller may determine the deformation of the target substrate 350 based on those measured locations (e.g., from curve fitting, using a physical deformation model, etc.).

[0055] In Figure 3F, the donor substrate 300 is supported by a bonding support structure 332. The bonding support structure 332 may be part of the flipper 330 (of Figure 3E) or the donor substrate 300 may be placed into the bonding support structure 332 by the flipper 330. The bonding support structure 332 may hold the donor substrate 300 opposite to a plane of the target substrate 350. The bonding support structure 332 may hold the donor substrate by the carrier structure 314, including by one or more edges of the carrier structure 314. While in the bonding support structure 332, the position of the donor substrate 300 may be measured, such as by metrology tool 340C, to enable, for example, relative positioning between the donor substrate 300 and the target substrate 350. The metrology tool 340C may be any appropriate metrology tool. The metrology tool 340C may measure locations of the donor die (e.g., the donor die 302A-302C), locations of the alignment point 315, etc. The metrology tool 340C may measure significantly fewer locations than the metrology tool 340A or 340B, and the controller may determine the position of the target substrate 350 based on those fewer locations (e.g., from curve fitting, using physical deformation models, etc.). The controller may determine updated positions for the donor die (e.g., the donor die 302A-302C) based on a combination of the measured locations of the donor die 302A-302C (such as from Figure 3B) and the measured position of the donor substrate 300. The donor substrate 300 may experience deformation due to holding by a substrate chuck, the movement of the flipper 330, suspension from the bondingsupport structure 332, etc. The metrology tool 340C may also enable determination of deformation of the donor substrate by measuring locations. As noted above, the metrology tool 340C may measure significantly fewer locations than the metrology tools 340A and 340B, and the controller may determine the deformation of the donor substrate 300 based on those fewer locations (e.g., from curve fitting, using a physical deformation model, etc.) than those measured by the metrology tool 340A on the donor substrate 300 or by metrology tool 340B on the target substrate 350.

[0056] In Figure 3G, the target substrate 350 is supported by the substrate chuck 320B, which is supported by the support structure 322B. Once the position of the target dies are measured, the substrate chuck 320B may be moved, such as to align with the donor substrate 300 supported by the flipper (e.g., supported by the bonding support structure 332 of Figure 3F). The support structure 322B may move (e.g., along direction 326) to the position of the support structure 322A, while the support structure 322A may move (e.g., along direction 325) to the position of the support structure 322B. The positions are provided as examples, and the support structures may move to different positions. For example, in some embodiments, the support structure 322A may move to a loading position, such as to receive an additional target substrate (e.g., the target substrate 350). The substrate chuck 320B may then occupy another position in the apparatus (e.g., a bonding position). The position the substrate chuck 320B moves to after measurement of the positions of the target die (e.g., after the measurement depicted in Figure 3F) may be configured to place a donor die of the donor substrate 300 onto the target die of the target substrate 350. The substrate chuck 320B may be aligned with the donor substrate 300 in the flipper 330, which may be held above the plane of the substrate chuck 320B (as depicted in Figure 3G for a top down view in which the donor substrate 300 is at least partially above the plane of the substrate chuck 320B (e.g., obscuring the substrate chuck 320A).

[0057] In Figure 3H, the donor substrate 300 and the target substrate 350 are aligned. The donor substrate 300 may be aligned to the target substrate 350 by movement of the bonding support structure 332, such as in any of the directions or orientations 333. The target substrate 350 may be aligned with the donor substrate 300 by movement of a substrate chuck (e.g., the substrate chuck 320B of Figure 3G) or the support structure (e.g., the support structure 322B of Figure 3G). The donor substrate 300 and the target substrate 350 may be aligned to one another, including by both coarse and fine alignment, such as by alignment of the relative positions of one or more alignment point (e.g., the alignment point 315 of the donor substrate 300 and the alignment point 317 of the target substrate 350). In some embodiments, the donor substrate 300 and the target substrate 350 may be aligned, such as by coarse alignment. In some embodiments, once the donor substrate 300 and the target substrate 350 are aligned, one or more donor die of the donor substrate 300 may be aligned with one or more target die of the target substrate 350. In Figure 3H, the alignment of the donor die 302B with the target die 304B (e.g., of the alignment point 303B of donor die 302B with the alignment point 305B of target die 304B) is depicted. Once a donor die is aligned with a target die, that donor die may be placed on the target die, by any appropriate method, such as die actuator activation, gravitationalacceleration, electrostatic actuation, etc.

[0058] In Figure 31, an additional donor substrate (e.g., donor substrate 300-2 having a carrier structure 314-2) is placed on the substrate chuck 320A for additional placement of donor dies on target dies. In some embodiments, the additional donor substrate may be placed on the substrate chuck 320A after the substrate of the previous donor substrate is removed from the substrate chuck 320A — for example, if the substrate of a donor substrate is removed from the flipper 330 and re -placed on the substrate chuck 320A. In some embodiments, the previous donor substrate may be removed from the flipper 330 without recourse to the substrate chuck 320A, such as by removal from the flipper to an additional substrate chuck (not depicted) or any other appropriate removal procedure. The additional donor substrate may be placed on the substrate chuck 320A after the previous donor substrate is accepted by the flipper 330 or at any time when the substrate chuck 320A (or another substrate chuck) is free. The additional donor substrate (e.g., the donor substrate 300-2) may be substantially identical to or different from the previous donor substrate (e.g., the donor substrate 300). The processing of the donor substrate 300-2 by placement of the donor dies on target dies may proceed as previously described in relation to Figures 3A-3H, such as by placement on an additional target substrate (not depicted). The donor substrate 300-2 may be placed on the substrate chuck 320A while the donor dies of the donor substrate 300 are placed on the target dies of the target substrate 350, such as substantially simultaneously.

[0059] In Figure 3J, the positions of the donor die (e.g., the donor die 302A-2 to 302C-2) and / or of mark 315-2 are measured, as previously described in relation to Figure 3B.

[0060] In Figure 3J, additional donor die of the donor substrate 300 are placed on the target die of the target substrate 350. The position of the donor substrate 300, the target substrate 350, or a combination thereof may be adjusted to align an additional donor die of the donor substrate 300 with a target die of the target substrate 350. As depicted, the donor substrate 300 is positioned (such as by movement in the directions or orientations 334) to align the alignment point 303A of the donor die 302A with the alignment point 305A of the target die 304A. The donor die 302A may then be placed on the target die 304A by any appropriate method, such as previously described. The donor die 302B is depicted as bonded to the target die 304B, subsequent to their alignment at alignment point 307B in Figure 3H. As will be realized, the various steps of Figures 3A-H can be repeated as appropriate to bond multiple dies and process multiple donor and target substrates.

[0061] Additionally, after the donor die 302A-302C are placed on the target die 304A-304C, the carrier structure 314 (which may no longer hold a substantial number of donor die) may be removed from the bonding support structure 332 by any appropriate means. The carrier structure 314 may be removed to the flipper 330 or any other appropriate location.

[0062] Various techniques for continuous die bonding are described hereafter. Those techniques are described with reference to “donor die” and “target die”, which are relative descriptors as used herein and donor die may instead be target die and vice versa. A donor die may instead be a donor substrateand / or a target die may instead be a target substrate. A donor die may be bonded to a target substrate, a donor substrate may be bonded to a target substrate, or a donor substrate may be bonded to a target die. Multiple donor dies may be bonded to a single target die and vice versa. The continuous die bonding techniques are described, for example, with respect to the use of a carrier structure (e.g., carrier structure 414) to hold a donor die. As will be appreciated, the continuous die bonding techniques are not limited to use with a carrier structure or limited to use with a donor die. For example, additionally or alternatively, the continuous die bonding techniques may be used with an individual die, may be used with a wafer having undiced dies, etc. Additionally or alternatively, where appropriate and suitably configured, the continuous die bonding techniques may be used with, though, etc., for example, a target die (such as an individual target die, a wafer having undiced target dies, a carrier structure holding target die (e.g., carrier structure 416), etc.).

[0063] Figures 4A-4D are schematic diagrams illustrating an example planar apparatus and method for continuous die placement. Figure 4A is a penetrating plan view of a continuous process for bonding of donor die (e.g., donor die 402A-402D) to target die (e.g., target die 404A-404D). Figures 4B-4D are cross-sectional views of steps in a continuous process for bonding of donor die (e.g., donor die 402A-402D) to target die (e.g., target die 404A-404D), in some embodiments. In Figures 4A-4D, the donor die 402A-402C are supported by a carrier structure 414. In some embodiments, the carrier structure 414 may be at least partially transparent to at least a range of radiation in at least some regions. “Transparency” (and its grammatical conjugates) as used herein does not require that 100% of radiation intensity be passed through a material, but rather that a substantial or significant portion of radiation (e.g., at least 25%, at least 50%, at least 80%, at least 90%, at least 95%, etc.) pass through the material for at least a range of wavelengths. The carrier structure 414 may be transparent to visible light, infrared radiation, ultraviolet radiation, a particle or electron beam, etc. The carrier structure 414 may be fabricated of any appropriate material, such as glass, silicon dioxide, sapphire, acrylic, etc. In some embodiments, the carrier structure 414 may be substantially opaque. The transparency or opacity of the carrier structure 414 may vary based on the placement and / or release method used to transfer the donor die (e.g., donor die 402A-402D) to the target locations. The carrier structure 414 may be an undiced wafer or portion of an undiced wafer of which the donor die (e.g., the donor die 402A-402C) are part. The carrier structure 414 is depicted as substantially circular in the x-y plane, with an axis of rotation 440 about the z-direction (e.g., out of plane). The carrier structure 416 is likewise depicted as substantially circular in the z-y plane, with an axis of rotation 460 about the z-direction. In some embodiments, the carrier structure 414 may be substantially planar in the x-y plane, while, in some embodiments, the carrier structure 414 may have a substantially planar face in the z-y plane while not being substantially planar. In some embodiments, the carrier structure 414 may have non-planar geometry in the x-y plane, such as recesses, raised areas, tilt, etc., while still having a substantially two-dimensional face in the x-y plane. The carrier structure 414 may instead have a different shape (e.g., non-circular shape) in the x-y plane, such as square, hexagonal, etc. Insome embodiments, the carrier structure 414 may have a symmetrical (e.g., as shown) shape with one or more axis of symmetry, or asymmetrical cross-sectional area (for example, an irregular polygon).

[0064] The surface of the carrier structure 414 may have one or more areas capable of accepting a donor die (e.g., one of donor die 402A-402D). For example, the carrier structure 414 may have recesses, raised areas, electrostatic electrodes, adhesive areas, etc., such as area outlined by dashed rectangle 442, capable of accepting one or more donor die (e.g., one of donor die 402A-402D). The acceptance of the donor die by an area of the carrier structure may be mediated by any appropriate attractive force, such as gravitational, electrostatic, adhesive, magnetic, etc. In some embodiments, substantially all of the surface of the carrier structure 414 may be capable of one or more donor die (e.g., one of donor die 402A-402D). In some embodiments, a continuous region of the surface of the carrier structure 414, such as an annulus, may be capable of accepting one or more die (e.g., one of donor die 402A-402D). In some embodiments, non-contiguous regions of the surface of the carrier structure 414 may be capable of accepting one or more die (e.g., one of donor die 402A-402D). The surface of the carrier structure 414 may be capable of accepting die of the same or different dimensions. For example, the surface of the carrier structure 414 may contain suction (e.g., vacuum) pad over multiple regions, on which die (e.g., one of donor die 402A-402D) of a range of sizes may be adhered. In another example, the surface of the carrier structure 414 may contain recesses which may accept die (e.g., one of donor die 402A-402D) of a certain dimension, which may include die height / recess depth dimension restrictions.

[0065] The carrier structure 414 may be controllably moved (e.g., rotated) in a direction 446 about the axis of rotation 440. The carrier structure 416 may likewise be controllably moved in a direction 466 about the axis of rotation 460. The direction 446 is provided as an example. The carrier structure 414 may instead be rotated in an opposite direction or any appropriate direction, translated along the x, y, or z direction or any combination thereof. The carrier structure 414 may be moved in the direction 444 continuously, such that die bonding is performed continuously as the die (e.g., donor die 402A-402D) on the carrier moves through locations where various sub-processes of die bonding are performed. The carrier structure 414 or portions thereof may also be controllably moved in other directions, such as for die alignment. For example, the carrier structure 414 or a portion thereof may be controllably moved in the x-y plane for die alignment, in the z-direction for die placement, etc. The carrier structure 414 may be operated in both rotational and a translational mode, including sequentially or concurrently. For example, the carrier structure 414 may move in the z-direction towards another carrier structure (e.g., carrier structure 416) or any other appropriate target location while also rotating about the axis of rotation 440. The carrier structure 414 may move continuously or intermittently in any direction. For example, the carrier structure 414 may rotate in the direction 446 and stop at four (or fewer or more) positions corresponding to operations (e.g., sub-processes) in the process of continuous die bonding.

[0066] Although a single donor die (e.g., donor die 402A-402D) is depicted at each positions, multiple donor die may undergo any process described herein at the same time. That is, donor die 402A may instead be multiple donor die (including partially diced or undiced die, different types of donor die placed sequentially or concurrently, including on the same target die), and likewise for other donor die. Donor die (and target die) may be further diced, processed, tested, etc. after placement on target die (donor die).

[0067] Any characteristics and positions described for donor die (e.g., donor die 402A-402D) may also or instead be characteristics and positions of target die (e.g., target die 404A-404D, respectively). That is, any description of the donor die 402A may be applicable to the target die 404A, any description of the donor die 402B may be applicable to the target die 404B, any description of the donor die 402C may be applicable to the target die 404C, and any description of the donor die 402D may be applicable to the target die 404D. Any target position described in reference to the donor die may be a target die or any other appropriate target location. Any target position described in reference to the target die may be a donor die or any other appropriate donor or target location. Any characteristics and positions described for the carrier structure 414 may also or instead be characteristics of carrier structure 416, supporting donor die 404A-404D.

[0068] Example positions and operations will now be further discussed. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to any operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., the operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as happening in discrete positions (such as when movement of the carrier structure 414 is substantially zero), but the positions may instead correspond to continuous movement or operations may occur while the carrier structure 414 is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0069] A first position, such as corresponding to the position depicted for the donor die 404A, may correspond to placement of die on the carrier structure 414. The donor die 402A may be placed on the carrier structure by a pick and place element or any other appropriate method or apparatus (for example, a chip shooter). The donor die 402A may be placed on the carrier structure 414 based on alignment information (for example, based on detection of the positions of a region capable of die acceptance of the carrier structure 414), based on positional information of the carrier structure 414 (for example, based on detection that the carrier structure 414 is at (e.g., rotated to) the first position), etc. The donor die 404A may be placed on the carrier structure 414 at a given position relative to a region capable of die acceptance. For example, the donor die 402A may be centered withing the region capable of die acceptance. The method or apparatus for die placement on the carrier structure 414 may have intrinsic error or inaccuracy, including intrinsic error or inaccuracy greater than the tolerance of die bonding (e.g., die to die alignment requirements for die bonding).

[0070] The placement of the donor die 402 A on the carrier structure 414 may have an intended position (for example, centered in the region capable of die acceptance) and an actual position, where the actual position may differ from the intended position based on limitation of the method or apparatus for die placement on the carrier structure 414. The intended position may be a position that is not in the center of the region capable of die acceptance. The intended position may be identified in two directions (e.g., in the x-z place for the donor die 402A). The intended position may be identified in three directions (e.g., in x-y-x space for the donor die 402A). The intended position may be identified in up to six directions (or degrees of freedom), such as with respect to position in x-y-z space and with respect to rotation along each of the x-y-z axes (in free space). The intended position may be identified with respect to any appropriate dimensions or directions. The actual position (e.g., of the donor die 402 A) may likewise be described by any appropriate dimension or directions, such as those described in reference to the intended position. The difference between the intended position and the actual position will be further described in reference to a second position (e.g., the position of the donor die 402B). The difference between the intended position and the actual position may be bounded by the difference between the size of the die (e.g., the donor die 402A) and the size of the region of the carrier structure 414 capable of die acceptance. In some embodiments, if a die is placed (partially, fully, etc.) on the carrier structure 414 outside of the region capable of die acceptance, the die may not adhere to the carrier structure 414. For example, if the region capable of die acceptance is a recess, then a die placed outside of the recess may not be able to adhere to the carrier structure 414 and may be rejected for placement, returned for re -placement, etc.

[0071] Once the donor die 402A is placed on the carrier structure 414, the carrier structure 414 may move (e.g., in the direction 446), so that the donor die 402A occupies the position of the donor die 402B — which may be the second position of the carrier structure 414. The second position of the carrier structure 414 will now be described with reference to the donor die 402B, which it should be understood may be the donor die 210A after movement of the support structure from the first position to the second position.

[0072] The second position, such as corresponding to the position depicted for the donor die 402B, may correspond to measurement of the position of the die on the carrier structure 414. The position (e.g., location) of the donor die 402B may be measured by a location measurement element 450. Likewise, the position of the target die 404B may be measured by a location measurement element 470. The location measurement element 450 may measure an actual position of the donor die 402B, in relative (such as relative to an edge or other feature of the carrier structure 414 or region of the carrier structure 414 capable of accepting a die) or absolute terms (such as in distances from an origin point on the carrier structure, on the location measurement element 450, etc.). The location measurement element 450 may measure an intended position of the donor die 402B, such as by measuring extends of the region capable of accepting a die. The location measurement element 450 may be a camera, e.g., a two-dimensional camera, two or more one-dimensional cameras, an optical camera, etc., oranother measurement device, including a diffraction-based measurement device. The location measurement element 450 may be made up of multiple location measurement elements, such as an inplane measurement device which may measure locations in the x-y plane (relative to the refence axes) and an out of plane measurement device which may measure locations or distances in the z direction (relative to the reference axes). The location measurement element 450 may include one or more confocal microscopes, which may measure depth (or other distance). The location measurement element 450 may measure position, relative or absolute position, using overlay diffraction or other diffraction-based methods. The location measurement element 450 may operate in a scanning mode or from a fixed position relative to the carrier structure 414.

[0073] In some embodiments, the position of the donor die (e.g., the donor die 402B) may be adjusted based on the measured position. The adjustment may take place at any appropriate position of the carrier structure 414, including at multiple positions, while the carrier structure 414 is moved, iteratively including one or more measurement, etc. The position of the donor die (e.g. the donor die 402B) may be adjusted by any appropriate method. The position of the donor die 402B may be adjusted based on the measured position of the donor die 402B, such as obtained when the support structure is in the second position. The position of the donor die 402B may be adjusted based on a relationship (such as a difference) between the intended position and the actual position of the donor die 402B. The position of the donor die 402B may be adjusted by a die actuator (not shown in Figure 4A). Die actuator herein is used to refer to a structure comprising a die chuck or other die receptacle and one or more controllable actuator which may adjust a position of a die in at least one direction. The die actuator may adjust a position of the die (e.g., the donor die 402B) in one or more directions, sequentially or concurrently. The die actuator may be composed of multiple die actuators or operable in multiple directions, such as in-plane (e.g., along the x-y plane for the donor die 402B), out of plane (along the z-direction for the donor die 402B), with respect to three dimensions, with respect to four degrees of freedom (such as with respect to the in-plane direction and with respect to angles of rotation along the in-plane axes), with respect to six degrees of freedom (such as with respect to the x- y-z space and with respect to the angles of rotation along each of the orthogonal axes), etc. The die actuator may be integrated into the carrier structure 414. The die actuator may be attached to the die (e.g., the donor die 402B) before it is placed onto the carrier structure 414. Each die may correspond to one or more die actuators.

[0074] The die actuators may be devices capable of supporting one or more die (e.g., donor die 402B). The die actuators may support die on one or more die chuck or other support structure. The die actuators may electrostatically or otherwise secure the die to the one or more die chuck or other support structure. The die actuators may have one or more adjustable elements (e.g., strut) which may be activated to adjust a position of the die. The die actuators may be electrically controllable. The die actuators may be reusable — that is, the die actuators may adhere and release the donor die 402B (such as adhere the donor die 402A at the first position and release the donor die 402C at a third position tobe subsequently described). The die actuators may include piezoelectric elements. The die actuators may include spring elements. The die actuators may include dynamic (e.g., sliding, bending, rolling, etc.) elements which may allow for self-alignment of die with target locations. Other methods of selfalignment may be used, including methods described in European Patent Application EP 22196903.3, which is herein incorporated by reference in its entirety.

[0075] The position of the donor die 402B may be adjusted to correspond to the intended position. That is, the actual position of the donor die 402B may be adjusted to correspond to an intended position. The position of the donor die 402B may be adjusted to correspond to a target location, such as a location to which the donor die 402B is to be adhered. The target location may be obtained from storage, such as based on a theoretical target (e.g., a target design), obtained by measurement (e.g., of a location of a target die 404C), such as based on a fabricated target, etc. That is, the intended location may be a location uninformed by information about a specific target location (e.g., the same for all die regardless of corresponding target), or may be further informed by information about a specific target location.

[0076] Once the position of the donor die 402B is measured, the carrier structure 414 may move (e.g., in the direction 446), so that the donor die 402B occupies the position of the donor die 402C — which may be a third position of the carrier structure 414. The third position of the support structure will now be described with reference to the donor die 402C, which it should be understood may be the donor die 402A after movement of the support structure from the first position to the third position or, likewise, the donor die 402B after movement of the support structure from the second position to the third position.

[0077] The third position, such as corresponding to the position depicted for the donor die 402C, may correspond to placement of the die on a corresponding target — for example, a target die 404C. The target die 404C may be one of a set of target die 404A-404C which may be sequentially contacted by donor die (e.g., donor die 404A-404C) during various movements of the carrier structure 414 or carrier structure 416. The target die 404A-404C may be the same as or different from the donor die 402A-402D. For example, the target die 404A-404D may be of the same or different circuitry type or orientation as the donor die 402A-402D (that is, of the same node, logic vs. memory, etc.). The target die 404A-404D may be of the same or different dimensions than the donor die 402A-204C. That is, the donor die 402C may be of the same, larger, or smaller dimensions in the y-x plane as the target die 404C. Likewise, the donor die 402C may be of the same, larger, or smaller thickness in the z-direction as the target die 404C. In an embodiment, the target die 404A-404D may not be a die (that is may not be diced). The target die 404A-404D may instead be a target location (which may or may not correspond to areas intended to later become dies) in an undiced wafer, for example.

[0078] The donor die 402C may be placed on the target die 404C by relative motion of the carrier structure 414 towards the target die 404C. Alternatively or additionally, the carrier structure 416 may also be a moveable structure operable to bring the donor die 402C and the target die 404C intocontact. The donor die 402C and the target die 404C may experience self-alignment as the donor die 402C and the target die 404C approach one another. For example, the donor die 402C and the target die 404C may be electrically biased such that electrically active areas of the donor die 402C (e.g., electrically active areas 106 of Figures 1A-1C) align via electrical attraction and repulsion with electrically active areas of the target die 404C (e.g., electrically active areas 108 of Figures 1A-1C). The donor die 402C may be released by the carrier structure 414 by any appropriate method, including passive methods (e.g., disengagement of an adhesive method) or active methods (e.g., engagement of a repulsion method), such that the donor die 402C is supported instead by the donor die 402C. Alternatively or additionally, the target die 404C may be released by the carrier structure 416.

[0079] Once the donor die 402C is placed on the target die 404C, the carrier structure 416 may move (e.g., in the direction 466), so that the donor die 402C and the target die 404C occupy the position of the donor die 402D and the target die 404D — which may be a fourth position of the carrier structure 416. The carrier structure 414 may also move, so that an additional donor die (e.g., an additional donor die 4042A) may be placed on the carrier structure 414 in the place previously occupied by the donor die 402D, or another area capable of accepting a donor die such as the area outline by the dashed rectangle 442. The fourth position of the carrier structure 416 will now be described with reference to the donor die 402D and target die 404D, which it should be understood may be any donor die 402A-402D after placement of the donor die on the target die (e.g., target die 404D).

[0080] Once the donor die 402D is placed on the target die 404D, the set of two or more dies may be referred to as a die pair 406. The die pair 406 may contain more than two die, including die which are placed sequentially or concurrently (e.g., two or more donor die, two or more target die, stacked die, etc.). The die pair 406 may be held together by hydrogen bonding, van der Waals attraction, etc. The die pair 406 may be chemically bonded, such as by metal-to-metal bonding (e.g., annealing). The die pair 406 may be released from the carrier structure 416, such as for further processing, testing, etc.

[0081] Once the donor die 402C (and the target die 404D) is removed from the carrier structure 414 (from the carrier structure 416), the carrier structure 414 (the carrier structure 416) may operate (individually or in concert) to place one or more additional donor die on one or more additional target die, such as by repeating one or more processes previously described. The relative motion of the carrier structure 414 and the carrier structure 416 may occur in any appropriate direction. A direction of gravity is not depicted, but the placement of the donor die 402C on the target die 404C may experience gravitation effects. For example, the placement of the donor die 402C on the target die 404C may be encouraged by gravity (e.g., occur in the direction of gravity) or be retarded by gravity (e.g., occur opposite the direction of gravity). Gravitational effects may be balanced by die clamps, suction, vacuum, and other forces.

[0082] Figures 4B-4D are cross-sectional views of concurrent sub-processes of the continuous process for bonding of donor die to target die. Figures 4B-4C depict placement of donor die 402A oncarrier structure 414, by pick and place element 480A, and placement of target die 404A on carrier structure 416, by pick and place element 480B. Pick and place element 480A (and pick and place element 480B) may be any appropriate placement element, capable of placing one or more donor die (target die) on carrier structure 414 (carrier structure 416). In Figure 4B, donor die 402A is held by pick and place element 480A and target die 404A is held by pick and place element 480B. Figure 4C depicts placement of the donor die 402C on the target die 404C by movement of the carrier structure 414. In some embodiments, placement of the donor die 402A (target die 404A) on the carrier structure 414 (carrier structure 416) may be accomplished by the same (or a concurrent) movement that places the donor die 402C (target die 404C) on the target die 404C.

[0083] Figure 4D depicts placement of donor die 402A on carrier structure 414, by pick and place element 480A, and placement of target die 404A on carrier structure 416, by pick and place element 480B and placement of the donor die 402C on the target die 404C by radiation-mediated die transfer. In some embodiments, donor die (e.g., donor die 402A-402D) may be adhered to the carrier structure 414 by, e.g., a layer of adhesive 432A, 432C. Herein, “adhered” (and its grammatical conjugates) encompasses holding of one material to another in a manner which is releasable, including where the release is chemically, physically, electrically, etc. mediated. The adhesive 432A, 432C may be any appropriate adhesive, such as an organic glue, a polymer glue, etc. The adhesive may be applied to the carrier structure 414 (such as by spin coating) and then the donor die (e.g., the donor die 402A-402D) applied to the adhesive on the substrate. The adhesive 432A, 432C may be applied to a surface of the donor die (e.g., donor die 402A-402D), such as by ink jetting, dipping, etc., and then the donor die (e.g., the donor die 402A-402D) and adhesive 432A, 432C transferred to the carrier structure 414, such as depicted in Figure 4D. The adhesive 432A, 432C may be of any appropriate thickness. As depicted in Figure 4D, the adhesive 432A, 432C may be present in some regions (e.g., of the carrier structure 414) and not others. In some embodiments, the adhesive may be present across substantially all the surface of the carrier structure 414, including in regions on which no donor die is adhered (such as due to spin coating of the adhesive onto the carrier structure 414 and subsequent placement of the donor die 402A-402D). In some embodiments, the adhesive may be actively removed from areas of the carrier structure 414 in which no donor die is placed, such as by cleaning, development, oxidation, etc. after placement of the donor die (e.g., the donor die 402A-402D). In some embodiments, the adhesive 432A, 432C may be present in some regions of the donor die (e.g., between the donor die 402A-402D and the carrier structure 414) and not in others. For example, the region of the carrier structure 414 covered by the adhesive, such as adhesive 432C, may be smaller than the area of the carrier structure 414 covered (e.g., contacted) by the donor die, such as donor die 402C — such as if the adhesive is inkjet printed on the carrier structure 414 and the donor die 402 A placed onto one or more drops of adhesive.

[0084] The adhesive 432A, 432 may be an adhesive which forms a gas when exposed to radiation or heat. Herein, “gas”, “gaseous”, and other grammatical conjugates are used to refer to any form ofmatter other than solid, such as a vapor, smoke, suspended particulates, etc. which has no fixed shape (e.g., flows) and no fixed volume (e.g., is dispersible). The gas may be a gaseous product (for example, byproduct) of the volumetric expansion of the adhesive. For example, the adhesive 432A, 432C may be an adhesive which experiences a phase change (such as at atmospheric temperature and pressure) from solid or liquid to gas or vapor when excited by a burst of radiation or heated by such a burst of radiation. In another example, the adhesive 432A, 432Cmay be an adhesive which experiences a chemical change (such as a decomposition, oxidation, reduction, etc.) which forms gas when excited by a burst of radiation or heated by such a burst. In some embodiments, in conjunction with the formation of a gas or alone, the adhesive 432A, 432C may form particulates suspended in a gas (for example, smoke). The particulates may have the same or different chemical composition as the adhesive 432A, 432C. In an example, the adhesive 432A, 432C may contain a dissolved gas which may precipitate at least partially when exposed to radiation or heat and which may create, in addition to any gas, bubbles within the adhesive 432A, 432C thereby increasing the volume occupied by the adhesive. The adhesive may be any appropriate material which experiences radiation-mediated volumetric expansion, where radiation-mediated volumetric expansion includes heat-mediated volumetric expansion. The volumetric expansion of the adhesive may cause release of the donor die 402C from the carrier structure 414 and towards the target die (e.g., target die C) on a carrier structure 416. The radiation-mediated placement of the donor die (e.g., donor die 402A-402D) on the target die (e.g., 404A-404D) may enable die bonding, as previously described.

[0085] The radiation which is supplied to cause the expansion of the adhesive may be supplied by a radiation source (e.g., radiation source 482), including through the carrier structure 414. In some embodiments, the radiation source may deliver radiation, including additional radiation, not through the carrier structure 414. For example, the radiation source may deliver radiation from the side (e.g., along the y-direction) instead of or in addition to any radiation delivered through the carrier structure 414. In some embodiments, multiple radiation sources may be used to perform operations involving radiation-mediated die bonding. In some embodiments, a single radiation source may be used to perform the operations involving radiation-mediated die bonding. Although the radiation source 482 is depicted as incandescent bulbs, any appropriate radiation sources may be used, such as a broadband light source (e.g., white light), a light emitting diode (LED), a laser, etc. The radiation source 482 may provide radiation with any appropriate wavelength and wavelength range (e.g., bandwidth). The radiation source 482 may have any appropriate spot size. The radiation source 482 may have a spot size smaller than a donor die (e.g., than donor die 402C). The radiation source 482 may have a spot size on the order of the size of a donor die (e.g., donor die 402C). In some embodiments, the radiation source 482 may expose an area smaller than the area of a donor die (e.g., donor die 402C) at a time, such as for selection of one donor die (e.g., of multiple donor dies) at a time for release. In some embodiments, the radiation source 482 may have a larger spot size and may be focused, such as by focusing optics (not depicted) at the adhesive (e.g., the adhesive 432C) on the backside of one donordie at a time. In some embodiments, the radiation source 482 may be focused on different donor die (e.g., one or more of multiple the donor die) at different times (such as when they are aligned with respective target die (e.g., target die 404C)) in order to release those one or more of the donor die which are aligned at any given position of the carrier structure 414 relative to the target die. In some embodiments, there may be relative movement, such as in the direction 446 depicted for carrier structure 414, between the radiation and the adhesive of the donor die (e.g., the donor die 402C) in order to release the donor die (e.g., the donor die 402C) for die bonding. In an embodiment, the radiation source 482 may itself move, including opposite to the direction 446. In an embodiment, the radiation source 482 may contain optics (not depicted) to cause the relative movement. In an embodiment, the relative movement may be created, at least in part, by movement of the carrier structure 414. The carrier structure 414 may be at least partially transparent to radiation of a wavelength (or range of wavelengths) which causes radiation-mediated volume expansion in the adhesive 432A, 432C. The radiation of the radiation source 482 may penetrate through the carrier structure 414 to reach the adhesive 432A, 432C on the backside of the donor die (e.g., the donor die 402A, 402C) in order to cause radiation-mediated release (and bonding) of the donor die.

[0086] Figure 4D also depicts the volumetric expansion of the adhesive 432C. As the adhesive 432C is exposed to the radiation provided by the radiation source 482, the adhesive 432C may generate gas (e.g., gaseous byproducts) in regions 434C. In some embodiments, the regions 434C containing gas may be generated at the interface of the adhesive 432C and the carrier structure 414 (e.g., as depicted in Figure 4D). In some embodiment, the regions containing gas may be generated within the adhesive 432C, such as at a penetration depth in the adhesive. In some embodiments, the regions containing gas may be generated at the interface of the adhesive 432C and the donor die 402C. In some embodiments, gas may be generated, including in substantially equal density, throughout the adhesive 432A, 432C. Expansion of the adhesive 432C may cause placement of the donor die 402C on the target die 404C.

[0087] Figures 5A-5B are schematic diagrams illustrating an example turret apparatus and method for continuous die placement. Figure5A-5B are cross-sectional views of steps in a continuous process for bonding of donor die (e.g., donor die 502A-502D) to target die (e.g., target die 504A-504D), in some embodiments. In Figures 5A-5B, the donor die 502A-502C are supported by a carrier structure 514. In some embodiments, the carrier structure 514 may be at least partially transparent to at least a range of radiation in at least some regions, such as previously described in relation to carrier structure 414 of Figures 4A-4D. The carrier structure 514 may be fabricated of any appropriate material, such as glass, silicon dioxide, sapphire, acrylic, etc. In some embodiments, the carrier structure 514 may be substantially opaque. The carrier structure 514 may be an undiced wafer or portion of an undiced wafer of which the donor die (e.g., the donor die 502A-502C) are part. The carrier structure 514 is depicted as substantially circular in the y-z plane and substantially cylindrical in three dimensions, with an axis of rotation 540 about the x-direction (e.g., out of plane). The carrier structure 516 islikewise depicted as substantially circular in the y-z plane and substantially cylindrical in three dimensions, with an axis of rotation 560 about the x-direction. In some embodiments, the carrier structure 514 may be substantially symmetrical in the y-z plane, while, in some embodiments, the carrier structure 514 may not be substantially symmetrical in the y-z plane. In some embodiments, the carrier structure 514 may have deviations in the cylindrical face, such as recesses, raised areas, tilt, etc., while still being substantially symmetrical in the y-z plane. The carrier structure 514 may instead have a different shape (e.g., non-circular shape) in the x-y plane, such as square, hexagonal, etc. In some embodiments, the carrier structure 514 may have a symmetrical (e.g., as shown) shape with one or more axis of symmetry, or asymmetrical cross-sectional area (for example, an irregular polygon).

[0088] The surface of the carrier structure 514 may have one or more areas capable of accepting a donor die (e.g., one of donor die 502A-502D), such as those previously described in relation to Figures 4A-4D. For example, the carrier structure 514 may have recesses, raised areas, electrostatic electrodes, adhesive areas, etc., such as area outlined by dashed rectangle 542, capable of accepting one or more donor die (e.g., one of donor die 502A-502D).

[0089] The carrier structure 514 may be controllably moved (e.g., rotated) in a direction 546 about the axis of rotation 540. The carrier structure 516 may likewise be controllably moved in a direction 566 about the axis of rotation 560. The direction 546 is provided as an example. The carrier structure 514 may instead be rotated in an opposite direction or any appropriate direction, translated along the x, y, or z direction or any combination thereof. The carrier structure 514 may be moved in the direction 546 continuously, such that die bonding is performed continuously as the die (e.g., donor die 502A-502D) on the carrier moves through locations where various sub-processes of die bonding are performed. The carrier structure 514 or portions thereof may also be controllably moved in other directions, such as for die alignment. For example, the carrier structure 514 or a portion thereof may be controllable moved in the x-y plane for die alignment, in the y-direction for die placement, etc. The carrier structure 514 may be operated in both rotational and a translational mode, including sequentially or concurrently. For example, the carrier structure 514 may move in the z-direction towards another carrier structure (e.g., carrier structure 516) or any other appropriate target location while also rotating about the axis of rotation 540. The carrier structure 514 may move continuously or intermittently in any direction. For example, the carrier structure 514 may rotate in the direction 546 and stop at four (or fewer or more) positions corresponding to operations (e.g., sub-processes) in the process of continuous die bonding.

[0090] Although a single donor die (e.g., donor die 502A-502D) is depicted at each positions, multiple donor die may undergo any process described herein at the same time. That is, donor die 502A may instead be multiple donor die (including partially diced or undiced die, different types of donor die placed sequentially or concurrently, including on the same target die), and likewise for other donor die. Donor die (and target die) may be further diced, processed, tested, etc. after placement on target die (donor die).

[0091] Any characteristics and positions described for donor die (e.g., donor die 502A-502D) may also or instead be characteristics and positions of target die (e.g., target die 504A-504D, respectively). That is, any description of the donor die 502A may be applicable to the target die 504A, any description of the donor die 502B may be applicable to the target die 504B, any description of the donor die 502C may be applicable to the target die 504C, and any description of the donor die 502D may be applicable to the target die 504D. Any target position described in reference to the donor die may be a target die or any other appropriate target location. Any target position described in reference to the target die may be a donor die or any other appropriate donor or target location. Any characteristics and positions described for the carrier structure 514 may also or instead be characteristics of carrier structure 516, supporting donor die 504A-504D.

[0092] Example positions and operations will now be further discussed. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to any operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., the operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as happening in discrete positions (such as when movement of the carrier structure 514 is substantially zero), but the positions may instead correspond to continuous movement or operations may occur while the carrier structure 514 is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0093] A first position, such as corresponding to the position depicted for the donor die 504A, may correspond to placement of die on the carrier structure 514. The donor die 502A may be placed on the carrier structure by any appropriate method or apparatus, such as those previously described in relation to the donor die 402A of Figure 4A.

[0094] Once the donor die 502A is placed on the carrier structure 514, the carrier structure 514 may move (e.g., in the direction 546), so that the donor die 502A occupies the position of the donor die 502B — which may be the second position of the carrier structure 514. The second position of the carrier structure 514 is now described with reference to the donor die 502B, which it should be understood may be the donor die 502A after movement of the support structure from the first position to the second position. The second position, such as corresponding to the position depicted for the donor die 502B, may correspond to measurement of the position of the die on the carrier structure 514. The position of the donor die 502B may be measured by any appropriate process or apparatus, such as by location measurement element 550, such as those described in reference to the donor die 402B of Figure 4A. The position of the target die 504B may be measured by any appropriate process or apparatus, such as by location measurement element 552, which may be any appropriate location measurement element such as those previously described.

[0095] Once the position of the donor die 502B is measured, the carrier structure 514 may move (e.g., in the direction 546), so that the donor die 502B occupies the position of the donor die 502C —which may be a third position of the carrier structure 514. The third position of the support structure is now described with reference to the donor die 502C, which it should be understood may be the donor die 502A after movement of the support structure from the first position to the third position or, likewise, the donor die 502B after movement of the support structure from the second position to the third position. The third position, such as corresponding to the position depicted for the donor die 502C, may correspond to placement of the die on a corresponding target — for example, a target die 504C. The donor die 502C may be placed on the target die 504C by any appropriate method, including those previously described in relation to the donor die 402C of Figure 4A.

[0096] Once the donor die 502C is placed on the target die 504C, the carrier structure 516 may move (e.g., in the direction 566), so that the donor die 502C and the target die 504C occupy the position of the donor die 502D and the target die 504D — which may be a fourth position of the carrier structure 516. The carrier structure 514 may also move, so that an additional donor die (e.g., an additional donor die 5042A) may be placed on the carrier structure 514 in the place previously occupied by the donor die 502D, or another area capable of accepting a donor die such as the area outline by the dashed rectangle 542. The fourth position of the carrier structure 516 is now described with reference to the donor die 502D and target die 504D, which it should be understood may be any donor die 502A-502D after placement of the donor die on the target die (e.g., target die 504D).

[0097] Once the donor die 502D is placed on the target die 504D, the set of two or more dies may be referred to as a die pair 506. The die pair 506 may contain more than two die, including die which are placed sequentially or concurrently (e.g., two or more donor die, two or more target die, stacked die, etc.). The die pair 506 may be held together by hydrogen bonding, van der Waals attraction, etc. The die pair 506 may be chemically bonded, such as by metal-to-metal bonding (e.g., annealing). The die pair 506 may be released from the carrier structure 516, such as for further processing, testing, etc.

[0098] Once the donor die 502C (and the target die 504D) is removed from the carrier structure 514 (from the carrier structure 516), the carrier structure 514 (the carrier structure 516) may operate (individually or in concert) to place one or more additional donor die on one or more additional target die, such as by repeating one or more processes previously described. The relative motion of the carrier structure 514 and the carrier structure 516 may occur in any appropriate direction. A direction of gravity is not depicted, but the placement of the donor die 502C on the target die 504C may experience gravitation effects. For example, the placement of the donor die 502C on the target die 504C may be encouraged by gravity (e.g., occur in the direction of gravity) or be retarded by gravity (e.g., occur opposite the direction of gravity). Gravitational effects may be balanced by die clamps, suction, vacuum, and other forces.

[0099] Figure 5B depicts placement of the donor die 502C on the target die 504C by radiation- mediated die transfer. In some embodiments, donor die (e.g., donor die 502A-502D) may be adhered to the carrier structure 514 by, e.g., a layer of adhesive 532A-532C, which may be any appropriate adhesive, such as that previously described in relation to adhesive 432A, 432C of Figure 4D. Herein,“adhered” (and its grammatical conjugates) encompasses holding of one material to another in a manner which is releasable, including where the release is chemically, physically, electrically, etc. mediated. The adhesive 532A-532C may be any appropriate adhesive, such as an organic glue, a polymer glue, etc. The adhesive may be applied to the carrier structure 514 (such as by rolling, dipping, spraying, etc.) and then the donor die (e.g., the donor die 502A-502D) applied to the adhesive on the substrate. The adhesive 532A-532C may be applied to a surface of the donor die (e.g., donor die 502A-502D), such as by ink jetting, dipping, etc., and then the donor die (e.g., the donor die 502A-502D) and adhesive 532A-532C transferred to the carrier structure 514, such as depicted in Figure 5B. The adhesive 532A-532C may be of any appropriate thickness. As depicted in Figure 5B, the adhesive 532A-532C may be present in some regions (e.g., of the carrier structure 514) and not others. In some embodiments, the adhesive may be present across substantially all the surface of the carrier structure 514, including in regions on which no donor die is adhered (such as due to rolling of the adhesive onto the carrier structure 514 and subsequent placement of the donor die 502A-502D). In some embodiments, the adhesive may be actively removed from areas of the carrier structure 514 in which no donor die is placed, such as by cleaning, development, oxidation, etc. after placement of the donor die (e.g., the donor die 502A-502D). In some embodiments, the adhesive 532A-532C may be present in some regions of the donor die (e.g., between the donor die 502A-502D and the carrier structure 514) and not in others. For example, the region of the carrier structure 514 covered by the adhesive, such as adhesive 532B, 532C, may be smaller than the area of the carrier structure 514 covered (e.g., contacted) by the donor die, such as donor die 502B, 502C — such as if the adhesive is inkjet printed on the carrier structure 514 and the donor die 502A placed onto one or more drops of adhesive.

[0100] The adhesive 532A-532C may be any appropriate adhesive which expands when exposed to radiation or heat, such as previously explained in relation to adhesives 432A, 432C of Figure 4D. The adhesive may be any appropriate material which experiences radiation-mediated volumetric expansion, where radiation-mediated volumetric expansion includes heat-mediated volumetric expansion. The volumetric expansion of the adhesive may cause release of the donor die 502C from the carrier structure 514 and towards the target die (e.g., target die 504C) on a carrier structure 516. The radiation-mediated placement of the donor die (e.g., donor die 502A-502D) on the target die (e.g., 504A-504D) may enable die bonding, as previously described.

[0101] The radiation which is supplied to cause the expansion of the adhesive may be supplied by a radiation source (e.g., radiation source 582), including through the carrier structure 514. The radiation source 582 is depicted as being within the carrier structure 514. In some embodiments, the carrier structure 514 may be hollow, such as having a toroid configuration. In some embodiments, the carrier structure 514 may have embedded radiation sources, such as LEDs, lasers, etc. In some embodiments, the radiation source 582 may be located outside of the carrier structure 514, but optics within the carrier structure 514 may focus radiation on the backside of the donor die 504C (or at other locations).In some embodiments, the radiation source may deliver radiation, including additional radiation, not through the carrier structure 514. For example, the radiation source may deliver radiation from the side (e.g., along the z-direction) instead of or in addition to any radiation delivered through the carrier structure 514. In some embodiments, multiple radiation sources may be used to perform operations involving radiation-mediated die bonding. In some embodiments, a single radiation source may be used to perform the operations involving radiation-mediated die bonding. Although the radiation source 582 is depicted as incandescent bulbs, any appropriate radiation sources may be used, such as previously described in relation to radiation source 482 of Figure 4D. The radiation source 582 may have any appropriate spot size, such as previously described in relation to the radiation source 482 of Figure 4D. In some embodiments, the radiation source 582 may be focused on different donor die (e.g., one or more of multiple the donor die) at different times (such as when they are aligned with respective target die (e.g., target die 504C)) in order to release those one or more of the donor die which are aligned at any given position of the carrier structure 514 relative to the target die. In some embodiments, there may be relative movement, such as in the direction 546 depicted for carrier structure 514, between the radiation and the adhesive of the donor die (e.g., the donor die 502C) in order to release the donor die (e.g., the donor die 502C) for die bonding. In an embodiment, the radiation source 582 or the illumination thereof may itself move, including opposite to the direction 546. In an embodiment, the radiation source 582 may contain optics (not depicted) to cause the relative movement. In an embodiment, the relative movement may be created, at least in part, by movement of the carrier structure 514. The carrier structure 514 may be at least partially transparent to radiation of a wavelength (or range of wavelengths) which causes radiation-mediated volume expansion in the adhesive 532A-532C. The radiation of the radiation source 582 may penetrate through the carrier structure 514 to reach the adhesive 532A-532C on the backside of the donor die (e.g., the donor die 502A, 502C) in order to cause radiation-mediated release (and bonding) of the donor die.

[0102] Figure 5D also depicts the volumetric expansion of the adhesive 532C. As the adhesive 532C is exposed to the radiation provided by the radiation source 582, the adhesive 532C may generate gas (e.g., gaseous byproducts) in regions 534C. In some embodiments, the regions 534C containing gas may be generated at the interface of the adhesive 532C and the carrier structure 514 (e.g., as depicted in Figure 5D). In some embodiment, the regions containing gas may be generated within the adhesive 532C, such as at a penetration depth in the adhesive. In some embodiments, the regions containing gas may be generated at the interface of the adhesive 532C and the donor die 502C. In some embodiments, gas may be generated, including in substantially equal density, throughout the adhesive 532A-532C. Expansion of the adhesive 532C may cause placement of the donor die 502C on the target die 504C. Radiation mediated die placement may occur in any appropriate method, such as those previously described.

[0103] Figure 6 is a schematic diagram illustrating an example tracked apparatus and method forcontinuous die placement. Figure 6 is a cross-sectional view of steps in a continuous process for bonding of donor die (e.g., donor die 604A-604G) to target die (e.g., target die 602A-602C). As previously explained, “donor” and “target” are relative descriptors used for ease of description, and any “donor” die may instead be a “target” die and vice versa. Any of the “donor” and “target” die described herein may contain multiple die (such as two or more die or the same or different types, including undiced, partially diced, previously bonded, stacked, etc. die). Figure 6 depicts placement of donor die donor die (e.g., donor die 604A-604G) on target die (e.g., target die 602A-602C) by use of track 616 and shuttles 610A-610H. In Figure 6, the target die (e.g., target die 602A-602C) are supported by a carrier structure 614. In Figure 6, two target substrates are depicted (e.g., target structure 600A and target structure 600B), each containing identical target die (e.g., target die 602A- 602C) on carrier structures 614. The target die may be the same or different, e.g., die of different dimensions, different types of die, etc. The target structures may be the same or different, e.g., containing different types of die, different numbers of die, etc. Each target die (e.g., target die 602A- 602C) may have one or more alignment points (e.g., alignment points 603A-603C), which may be any appropriate alignment points as previously described in reference to alignment points 303A-303C of Figures 3A-3J. Each carrier structure 614 may have one or more alignment points (e.g., alignment point 615), which may be any appropriate alignment point as previously described in reference to alignment point 315 of Figures 3A-3J. The carrier structure 614 may be any appropriate carrier structure, such as previously described in relation to carrier structure 414 of Figure 4A-4D. The target die (e.g., target die 602A-602C) may be placed on the carrier structure 614 by any appropriate means, as previously described. The position of the target die (e.g., target die 602A-602C) may be measured by any appropriate means, such as by location measurement apparatus 640 A, which may be any appropriate location measurement apparatus as previously described is relation to location measurement element 450 of Figure 4A. The position of the targe die (e.g., target die 602A-602C) may be measured in any appropriate manner, such as relative to alignment point 615, by a measurement of an alignment point of a die (e.g., alignment point 605A-605C) relative to alignment point 615, in free space, etc. The position of the target die may be measured when the target structure is at a first position (e.g., the position of the target structure 600 A), while the placement of the donor die (e.g., the donor die 604G) on the target die (e.g., on the target die 602B) may occur while the target structure is at a second position (e.g., the position of the target structure 600B). In some embodiments, the donor die may be place on the target die while the carrier structure 614 is at the same position at which the position of the target die is measured.

[0104] The donor die (e.g., donor die 604A-604G) are supported by shuttles 610A-610G, respectively. In Figure 6, multiple shuttles 610A-610H are depicted, each containing (or configured to contain) identical donor die (e.g., donor die 604A-604G). The donor die may be the same or different, e.g., die of different dimensions, different types of die, etc. The shuttles (e.g., shuttles 610A-610G) may be the same or different, e.g., containing different types of die, different numbers of die(including multiple die of different types), etc. Each donor die (e.g., donor die 604A-604G) may have one or more alignment points (e.g., alignment points 605A-605C, 605G), which may be any appropriate alignment points as previously described. Each shuttle may have one or more alignment points (e.g., alignment point 607A-607C, 607G), which may be any appropriate alignment point as previously described. In some embodiments, the carrier structure 614 or the shuttles may be at least partially transparent to at least a range of radiation in at least some regions, such as for radiation- mediated die transfer.

[0105] The track 616 may be any appropriate track. The track 616 is depicted as a rounded rectangle, but may have any appropriate geometry, such as circular, ovoid, asymmetrical, etc. The track 616 is depicted as having shuttles (e.g., shuttles 610A-601H) on an outer surface, but instead or additionally may have shuttles on an outer surface. The track 616 may have any appropriate topology, including one or more twists where a shuttle may transfer from an inner surface to an outer surface and vice versa. The track 616 is depicted as substantially planar (e.g., in the x-y plane). The track 616 may instead have any appropriate configuration, such as substantially non-planar geometry. The track 616 and shuttles (e.g., shuttles 610A-601H) may have any appropriate means of adhesion. The shuttles (e.g., shuttles 610A-601H) may be held to the track 616 by mechanical means, such as by a retention arm, rollers, etc. The shuttles (e.g., shuttles 610A-601H) may be in physical contact with the track 616, or suspended by the track 616 (e.g., above or below the track) such as by magnetic levitation means. The shuttles (e.g., shuttles 610A-610H) may travel along the track 616 by any appropriate means of propulsion, including propulsion means present in the track 616, the shuttles (e.g., shuttles 610A-610H), or both. The shuttles (e.g., shuttles 610A-610H) may travel along the track 616 by rolling, two-dimensional magnetic propulsion (e.g., use of a Halbach array), etc. The shuttles (e.g., shuttles 610A-610H) may travel about the track 616 continuously (which, as previously described, does not preclude stops during one or more sub-process). The shuttles (e.g., shuttles 610A- 610H) may travel independently of one another. That is, the travel of a first shuttle may be faster, slower, in a different direction, etc. with respect to the track 616 than the travel of another shuttle. The shuttles (e.g., shuttles 610A-610H) may travel at any appropriate speed, including at variable speeds during the continuous die bonding process. The shuttles (e.g., shuttles 610A-610H) may be moveable about the track in at least a first process direction. In some embodiments, the shuttles (e.g., shuttles 610A-610H) may be moveable in a second direction, which may be a backwards direction with respect to the first process direction. In some embodiments, the shuttles (e.g., shuttles 610A-610H) may pass one another, including through use of a siding or any other appropriate track area. The shuttles (e.g., shuttles 610A-601H) may be capable of movement in directions other than the one or more directions of travel. In some embodiments, shuttles (e.g., shuttles 610A-610H) may be positionable with respect to distance from the track 616 (e.g., towards and away from the track 616). In some embodiments, the shuttles (e.g., shuttles 610A-610H) may be positionable about the track 616, such as in the positive or negative z direction for the depicted planar track of Figure 6. The donordie (e.g., donor die 604A-604G) may be positionable with respect to the shuttle (e.g., shuttles 610A- 610G, respectively), and therefore positionable with respect to the track 616 independently (e.g., to within a range of allowed positions) of the shuttle (e.g., shuttle 610A-610G) position. The donor die may be positionable, with respect to the shuttle, in up to two degrees of freedom (e.g., about the face of the shuttle), in up to four degrees of freedom (including rotation about the axes of the face of the shuttle), in up to three degrees of freedom (e.g., in the x, y, and z direction), in up to six degrees of freedom (e.g., including rotationally in each of the x, y, and z directions), etc. The donor die may be positionable in different directions by different means, such as by any appropriate actuator as previously described.

[0106] Example positions and operations of the shuttles (e.g., shuttles 610A-601H) on the track 616 will now be further discussed. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to any operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., the operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as happening in discrete positions (such as when movement of the shuttles (e.g., shuttles 610A-601H) is substantially zero), but the positions may instead correspond to continuous movement or operations may occur while the shuttle 610A-610H is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0107] A first position, such as corresponding to the position depicted for the donor die 604A, may correspond to placement of die on the shuttle (e.g., shuttle 610A). The donor die 604A may be placed on the shuttle 610A by a pick and place element or any other appropriate method or apparatus (for example, a chip shooter). The donor die 604A may be placed on the shuttle 610A based on alignment information (for example, based on detection of the positions of a region capable of die acceptance of the shuttle 610A such as by measurement of the alignment point 607 A), based on positional information of the shuttle 610A (for example, based on detection that the shuttle is at the first position on the track 616), etc. The donor die 604A may be placed on the shuttle 610A at a given position relative to a region capable of die acceptance. For example, the donor die 604A may be centered withing the region capable of die acceptance. The method or apparatus for die placement on the shuttle 610A may have intrinsic error or inaccuracy, including intrinsic error or inaccuracy greater than the tolerance of die bonding (e.g., die to die alignment requirements for die bonding).

[0108] The placement of the donor die 604A on the shuttle 610A may have an intended position (for example, centered in the region capable of die acceptance) and an actual position, where the actual position may differ from the intended position based on limitation of the method or apparatus for die placement on the shuttle 610A. The intended position may be a position that is not in the center of the region capable of die acceptance. The intended position may be identified in two directions (e.g., in the x-z plane for the donor die 604 A). The intended position may be identified in three directions (e.g., in x-y-x space for the donor die 604 A). The intended position may be identified in up to sixdirections (or degrees of freedom), such as with respect to position in x-y-z space and with respect to rotation along each of the x-y-z axes (in free space). The intended position may be identified with respect to any appropriate dimensions or directions. The actual position (e.g., of the donor die 604A) may likewise be described by any appropriate dimension or directions, such as those described in reference to the intended position. The difference between the intended position and the actual position will be further described in reference to a second position (e.g., the position of the donor die 604B). The difference between the intended position and the actual position may be bounded by the difference between the size of the die (e.g., the donor die 604 A) and the size of the region of the shuttle 610A capable of die acceptance. In some embodiments, if a die is placed (partially, fully, etc.) on the shuttle 610A outside of the region capable of die acceptance, the die may not be held by the shuttle 610A. For example, if the region capable of die acceptance is a recess, then a die placed outside of the recess may not be able to adhere to the shuttle 610A and may be rejected for placement, returned for re -placement, etc.

[0109] Once the donor die 604A is placed on the shuttle 610A, the shuttle 610A may move (e.g., in a process direction along the track 616), so that the donor die 604A occupies the position of the donor die 604B and the shuttle 610A occupies the position of the shuttle 610B — which may be the second position of the shuttle 610A. The second position will now be described with reference to the donor die 604B and the shuttle 610B, which should be understood may be the donor die 604 A after movement of the support structure from the first position to the second position.

[0110] The second position, such as corresponding to the position depicted for the donor die 604B, may correspond to measurement of the position of the die on the shuttle 610B. The position (e.g., location) of the donor die 604B may be measured by a location measurement element 640B. The location measurement element 450 may be any appropriate location measurement element, such as previously described in relation to the location measurement element 450 of Figure 4A. The location measurement element 640B may measure an actual position of the donor die 604B, in relative (such as relative to an edge or other feature of the shuttle 610B or region of the shuttle 610B capable of accepting a die) or absolute terms (such as in distances from an origin point on the track 616, on the location measurement element 640B, etc.). The location measurement element 640B may measure an intended position of the donor die 604B, such as by measuring extends of the region capable of accepting a die. The location measurement element 640B may be a camera, e.g., a two-dimensional camera, two or more one-dimensional cameras, an optical camera, etc., or another measurement device, including a diffraction-based measurement device. The location measurement element 640B may be made up of multiple location measurement elements, such as an in-plane measurement device which may measure locations in the x-z plane (relative to the refence axes) and an out of plane measurement device which may measure locations or distances in the y direction (relative to the reference axes). The location measurement element 640B may include one or more confocal microscopes, which may measure depth (or other distance). The location measurement element 640Bmay measure position, relative or absolute position, using overlay diffraction or other diffractionbased methods. The location measurement element 640B may operate in a scanning mode or from a fixed position relative to the shuttle 610B or the track 616.

[0111] In some embodiments, the position of the donor die (e.g., the donor die 402B) may be adjusted based on the measured position. The position of the donor die may be adjusted, such as by positioning of the shuttle relative to the track or by position of the donor die relative to the shuttle, in multiple sub-processes. The position of the donor die may be adjusted in different direction sequentially or concurrently. For example, a rotation of the donor die may be adjusted sequentially or concurrently with a height of the donor die. The position of the donor die may be adjusted multiple times, including in an iterative sub-process, including iteratively with measurement of position of the donor die. The position of the donor die may be adjusted in a gross adjustment and a fine adjustment, where the fine adjustment may follow the gross adjustment. The position of the donor die may be adjusted, then the position of the donor die measured, and the donor die may be accepted for placement or rejected based on the measured position. In some embodiments, a donor die rejected for placement based on its measured positions may be further adjusted, including by transport of the donor die and its respective shuttle to a previous position on the track 616 for further adjustment. The adjustment of the donor die position may take place at any appropriate position of the shuttle, including at multiple positions, while the shuttle is moved, iteratively including one or more measurement, etc. In Figure 6, a rotational adjustment of the donor die 604C is depicted on the shuttle 610C, at a third position of the shuttle (e.g., the shuttle 610C) on the track 616. A non-rotational adjustment of the donor die 604D is depicted on the shuttle 610D, at a fourth position of the shuttle (e.g., the shuttle 610D) on the track 616. The donor die may be adjusted in any appropriate direction at any appropriate position.

[0112] The position of the donor die may be adjusted by any appropriate method. The position of the donor die may be adjusted based on the measured position of the donor die, such as obtained when the shuttle is in the second position (e.g., of the shuttle 610B). The position of the donor die may be adjusted based on a relationship (such as a difference) between the intended position and the actual position of the donor die. The position of the donor die may be adjusted by a die actuator (not shown in Figure 6). Die actuator herein is used to refer to a structure comprising a die chuck or other die receptacle and one or more controllable actuator which may adjust a position of a die in at least one direction. The die actuator may adjust a position of the die in one or more directions, sequentially or concurrently. The die actuator may be composed of multiple die actuators or operable in multiple directions, such as in-plane (e.g., along the x-z plane for the donor die 604B), out of plane (along the y-direction for the donor die 604B), with respect to three dimensions, with respect to four degrees of freedom (such as with respect to the in-plane direction and with respect to angles of rotation along the in-plane axes), with respect to six degrees of freedom (such as with respect to the x-y-z space and with respect to the angles of rotation along each of the orthogonal axes), etc. The die actuator may beintegrated into the shuttle (e.g., the shuttle 610B). The die actuator may be attached to the die (e.g., the donor die 604B) before it is placed onto the shuttle (e.g., the shuttle 610B). Each die may correspond to one or more die actuators.

[0113] The die actuators may be devices capable of supporting one or more donor die (e.g., donor die 604A-604G). The die actuators may support die on one or more die chuck or other support structure. The die actuators may electrostatically or otherwise secure the die to the one or more die chuck or other support structure. The die actuators may have one or more adjustable elements (e.g., strut) which may be activated to adjust a position of the die. The die actuators may be electrically controllable. The die actuators may be reusable — that is, the die actuators may adhere and release the donor die (such as adhere the donor die 604A at the first position and release the donor die 604G at a position to be subsequently described). The die actuators may include piezoelectric elements. The die actuators may include spring elements. The die actuators may include dynamic (e.g., sliding, bending, rolling, etc.) elements which may allow for self-alignment of die with target locations. Other methods of self-alignment may be used, including methods described in European Patent Application EP 22196903.3, which is herein incorporated by reference in its entirety.

[0114] The position of the donor die may be adjusted to correspond to the intended position. That is, the actual position of the donor die may be adjusted to correspond to an intended position. The position of the donor die may be adjusted to correspond to a target location, such as a location to which the donor die is to be adhered. The target location may be obtained from storage, such as based on a theoretical target (e.g., a target design), obtained by measurement (e.g., of a location of a target die 602A-602C), such as based on a fabricated target, etc. That is, the intended location may be a location uninformed by information about a specific target location (e.g., the same for all die regardless of corresponding target) or may be further informed by information about a specific target location.

[0115] Once the position of the donor die 604B is measured, the shuttle 610B may move (e.g., in the process direction along the track 616), so that the donor die 604B occupies the position of the donor die 604C-604G. Sub-processes depicted as occurring at the locations of donor die 604C and donor die 604D and their respective shuttle locations (e.g., locations of shuttle 610C and shuttle 610D) have already been described. Other positions, such as the positions of the donor die 604E and the donor die 604F and their respective shuttle locations (e.g., the locations of shuttle 610E and shuttle 610F) may correspond to other sub-processes, such as surface preparation of donor die (e.g., cleaning, plasma treatment, etc.), topographic inspection of donor die (e.g., detection of particles, surface topography, etc.), and any other sub-process used in die bonding.

[0116] Once the donor die is accepted for die placement (e.g., after cleaning, measurement, adjustment, qualification, etc.), the shuttle may move (e.g., in a first process direction along the track 616), so that the donor die occupies the position of the donor die 604G — which may be a thirdposition of the shuttle 610G. The third position of the support structure will now be described with reference to the donor die 604G.

[0117] The third position, such as corresponding to the position depicted for the donor die 604G, may correspond to placement of the die on a corresponding target — for example, a target die 602B. The target die 604G may be one of a set of target die 602A-602C which may be sequentially contacted by donor die (e.g., donor die 604A-604G) during various movements of the carrier structure 414 and the shuttle (e.g., the shuttle 610A-610G). The target die 602A-602C may be the same as or different from the donor die 604A-604G. For example, the target die 602A-602Cmay be of the same or different circuitry type or orientation as the donor die 604A-604G (that is, of the same node, logic vs. memory, etc.). The target die 60cA-602C may be of the same or different dimensions than the donor die 604A-604G. That is, the donor die 604G may be of the same, larger, or smaller dimensions in the y-z plane as the target die 602B. Likewise, the donor die 604G may be of the same, larger, or smaller thickness in the z-direction as the target die 602B. In an embodiment, the target die 602A- 602C may not be a die (that is may not be diced). The target die 602A-602C may instead be a target location (which may or may not correspond to areas intended to later become dies) in an undiced wafer, for example.

[0118] The donor die 604G may be placed on the target die 602B by relative motion of the shuttle 610G towards the target die 602B, such as by geometry of the track 616. Alternatively or additionally, the shuttle 610G may also contain a moveable structure, such as a die actuator, operable to bring the donor die 604G and the target die 610B into contact. The donor die 604G and the target die 602B may experience self-alignment as the donor die 604G and the target die 602B approach one another. For example, the donor die 604G and the target die 610B may be electrically biased such that electrically active areas of the donor die 604G (e.g., electrically active areas 106 of Figures 1A-1C) align via electrical attraction and repulsion with electrically active areas of the target die 602B (e.g., electrically active areas 108 of Figures 1A-1C). The donor die 604G may be released by the shuttle 610G by any appropriate method, including passive methods (e.g., disengagement of an adhesive method) or active methods (e.g., engagement of a repulsion method), such that the donor die 604G is supported instead by the target die 602B. Alternatively or additionally, the target die 602B may be released by the carrier structure 614.

[0119] Once the donor die 604G is placed on the target die 602B, the shuttle (e.g., the shuttle 610G) may move (e.g., in the first process direction of the track 616), so that the shuttle 610G occupies the position of the shuttle 61 OH — which may be a fourth position of the shuttle. The shuttle 610G may move, so that an additional donor die (e.g., an additional donor die 604A) may be placed on the shuttle 61 OH in the place previously occupied by the donor die 604G, or another area capable of accepting a donor die such as the area outline by the dashed rectangle 642.

[0120] Once the donor die 604G is placed on the target die 602B, the set of two or more dies may be referred to as a die pair. The die pair may contain more than two die, including die which are placedsequentially or concurrently (e.g., two or more donor die, two or more target die, stacked die, etc.). The die pair may be held together by hydrogen bonding, van der Waals attraction, etc. The die pair may be chemically bonded, such as by metal-to-metal bonding (e.g., annealing). The die pair may be released from the track 616 or from the shuttle (e.g., shuttle 610 GH), such as for further processing, testing, etc.

[0121] Once the donor die 610G or the target die 602B is removed from the shuttle 610G or from the track 616, the shuttles (e.g., shuttles 610A-610H) or the track 616 may operate (individually or in concert) to place one or more additional donor die on one or more additional target die, such as by repeating one or more processes previously described. The relative motion of the shuttles (e.g., the shuttles 610A-610H) and the track 616 may occur in any appropriate direction. A direction of gravity is not depicted, but the placement of the donor die 604G on the target die 602B may experience gravitational effects. For example, the placement of the donor die 604G on the target die 602B may be encouraged by gravity (e.g., occur in the direction of gravity) or be retarded by gravity (e.g., occur opposite the direction of gravity). Gravitational effects may be balanced by die clamps, suction, vacuum, and other forces.

[0122] Figures 7A-7D are schematic diagrams illustrating example shuttles for continuous die placement. Figures 7A-7B depict example shuttles for radiation-mediated die placement, for use with the continuous die bonding apparatus of Figure 6. Figures 7A-7B depict example shuttle 710, supporting example donor die 704. The donor die 704 contains one or more alignment point 705, which may be any appropriate alignment point such as those previously described. The shuttle 710 may also contain one or more alignment point 707, which may be any appropriate alignment point as previously described. The donor die 704 may be adhered to the shuttle 710 by a layer of adhesive 732, which may be any appropriate volumetrically expansive adhesive such as previously described for adhesive 432A, 432C of Figure 4D. The shuttle 710 may travel, by any previously described means, along track 616. The shuttle 710 may be positionable, in any appropriate direction, with respect to the track 616, as previously described.

[0123] Once the donor die 704 is aligned to a target location (not depicted), the donor die 704 may be released from the shuttle 710 by radiation mediated die transfer. The die transfer may release the donor die 704 from the shuttle 710 at any appropriate velocity, acceleration, etc. The die transfer may release the donor die 704 from the shuttle, and the donor die 704 may be accelerated by other means, such as by gravitational acceleration. The shuttle 710 may have one or more radiation-transparent window 720, which may be transparent to any appropriate type of radiation to any appropriate degree, as previously described in relation to Figures 4D and 5B. In some embodiments, radiation may be delivered to the adhesive 732 through the radiation-transparent window 720. In some embodiments, radiation may be delivered to the adhesive 732 through the radiation-transparent window 720 of the shuttle 710 and through a radiation-transparent window 722 of the track 616. In some embodiments, radiation may be delivered additionally or instead from another direction, including from the side ofthe donor die (e.g., not through the radiation-transparent window 720 or the radiation-transparent window 722), or from within the shuttle 710.

[0124] The radiation which is supplied to cause the expansion of the adhesive may be supplied by a radiation source (e.g., radiation source 740), including through the shuttle 710. The radiation source 582 is depicted as being inside the track 616. In some embodiments, the shuttle 710 or the track 616 may be hollow, such as having an internal cavity which may house the radiation source 740. In some embodiments, the shuttle 710 may have embedded radiation sources, such as LEDs, lasers, etc. In some embodiments, the radiation source 740 may be located outside of the shuttle 710 or the track 616, but optics within the shuttle 710 or the track 616 may focus radiation on the backside of the donor die 704 (or at other locations). In some embodiments, the radiation source may deliver radiation, including additional radiation, not through the shuttle 710 or the track 616. For example, the radiation source may deliver radiation from the side instead of or in addition to any radiation delivered through the radiation-transparent window 720. In some embodiments, multiple radiation sources may be used to perform operations involving radiation-mediated die bonding. In some embodiments, a single radiation source may be used to perform the operations involving radiation- mediated die bonding. Although the radiation source 740 is depicted as incandescent bulbs, any appropriate radiation sources may be used, such as previously described in relation to radiation source 482 of Figure 4D. The radiation source 740 may have any appropriate spot size, such as previously described in relation to the radiation source 482 of Figure 4D. In some embodiments, the radiation source 740 may be focused on different donor die (e.g., one or more of multiple the donor die), on the same or different shuttles, at different times (such as when they are aligned with respective target die) in order to release those one or more of the donor die which are aligned at any given position of the shuttle 710 relative to the target die. In some embodiments, there may be relative movement between the radiation and the adhesive 732 of the donor die 704 in order to release the donor die 704 for die bonding. In an embodiment, the radiation source 740 or the illumination thereof may itself move. In an embodiment, the radiation source 740 may contain optics (not depicted) to cause the relative movement. In an embodiment, the relative movement may be created, at least in part, by movement of the shuttle 710 or the donor die 704 relative to the shuttle.

[0125] Figure 7B also depicts the volumetric expansion of the adhesive 732. As the adhesive 732 is exposed to the radiation provided by the radiation source 740, the adhesive 732 may generate gas (e.g., gaseous byproducts) in regions 734. In some embodiments, the regions 734 containing gas may be generated at the interface of the adhesive 732 and the shuttle 710 (e.g., as depicted in Figure 7B). In some embodiment, the regions containing gas may be generated within the adhesive 732, such as at a penetration depth in the adhesive. In some embodiments, the regions containing gas may be generated at the interface of the adhesive 732 and the donor die 704. In some embodiments, gas may be generated, including in substantially equal density, throughout the adhesive 732. Expansion of the adhesive 732 may cause placement of the donor die 704 on the target location. Radiation mediated dieplacement may occur in any appropriate method, such as those previously described.

[0126] Figures 7C-7D depict example shuttles for die placement by die actuators, for use with the continuous die bonding apparatus of Figure 6. Figures 7C-7D depict example shuttle 750, supporting example donor die 704. The donor die 704 contains one or more alignment points 705, which may be any appropriate alignment point such as those previously described. The shuttle 750 may also contain one or more alignment points 707, which may be any appropriate alignment point as previously described. The donor die 704 may be adhered to the shuttle 710 by a electrostatic attraction or any other appropriate method. The shuttle 710 may travel, by any previously described means, along track 616. The shuttle 710 may be positionable, in any appropriate direction, with respect to the track 616, as previously described.

[0127] The die actuator may have any appropriate conformation. One example conformation will now be described. The die actuator may consist of die actuator clamps 762, shear piezoelectric elements 766, a die platform 760, and a die clamp 768. The shuttle 750 may contain one or more die actuator electrodes 780 for control or activation of the die actuator. The die actuator clamps 762 may be electrostatic clamps. The die actuator clamps 762 may be capacitive clamps. The die actuator clamps may contain shear piezoelectric material between two clamps (which may be electrostatic clamps, which may be capacitive clamps, etc.), where each of the clamps and the shear piezoelectric element may each be operated independently. The die actuator clamps 762 may apply a high voltage (which may be constant or a varying signal) to surfaces of the die actuator, to surfaces of the shear piezoelectric elements 766, and to surfaces of the die platform 760 to induce attraction between the die actuator clamps 762 and the shuttle 710, the die platform 760, or the shear piezoelectric element 764. When engaged, the die actuator clamps 762 may prevent movement of the shuttle 710, the die platform 760, or the shear piezoelectric element 764 relative to one another (e.g., prevent sliding of the die platform 760 relative to the shuttle 710). When released, the die actuator clamps 762 may allow surfaces of the shuttle 710, the die platform 760, or the shear piezoelectric element 764 to slide past one another. The die actuator clamps 762 may operate to produce micro-stepper functionality between the shear piezoelectric element 764, the shuttle 710, and the die platform 760.

[0128] The shuttle 710 may contain one or more controller electrodes 780, which may operate with die actuator electrodes to supply power to and control the die actuator. The one or more controller electrodes 780 may supply power to the die actuator electrodes, such as inductively, capacitively (e.g., through capacitive charging), etc. Although the one or more controller electrodes 780 are shown as embedded in the shuttle 710, it should be understood that the one or more controller electrodes may be surface electrodes and that the one or more die actuator electrodes may be surface electrodes. The one or more controller electrodes may supply power, actuation signals, control signals, etc. including by different of the one or more controller electrodes. The signals may be wireless, impedance based, capacitive, voltage based, current based, etc. For example, a given of the one or more controller electrodes 780 may supply power, while another of the one or more controller electrodes 780 maysupply a control signal for a given die actuator clamp 762. The one or more die actuator electrodes may also correspond to different elements of the die actuator. For example, a given of the one or more die actuator electrodes may correspond to a clamping effect of a given of the die actuator clamps while another of the one or more die actuator electrodes may correspond to a release effect for the given of the die actuator clamps. The die actuator electrodes may be provided, by the one or more controller electrodes 780, with signals which cause actuation of the die actuator. For example, the die actuator electrodes corresponding to the piezoelectric element 764 and the die actuator clamps 762 may be actuated (e.g., turned on or off) based in turn based on digital or analog signals from the one or more controller electrodes 780.

[0129] A relationship between the one or more controller electrodes 780 and the one or more die actuator electrodes may be known (e.g., based on a measured placement of the die actuator on the shuttle 710) or may be determined, such as by providing a test signal to each of the one or more controller electrodes 780 in turn and observing (e.g., experimentally) corresponding effects on the die actuator, which may include clamping, releasing, piezoelectric action, etc.

[0130] The die actuator may be supported by a support structure, interspersed between the die actuator and the shuttle (not depicted). The support structure may be a wafer, for example, a silicon dioxide on silicon wafer, provided with patterned electrodes. The support structure may be a printed circuit board (PCB), including a ceramic PCB. The support structure may be a wafer chuck, such as constructed of Teflon or another inert material, with embedded electrodes.

[0131] The die actuator may operate by adjusting the position of one or more supports of the die clamp 768. The die clamps 768 may be an electrostatic clamp, which functions to clamp or release the donor die 704. The die clamps 768 may apply a high voltage (which may be constant or a varying signal) to a donor die 704 to induce electrostatic attraction between the die clamps 768 and the donor die 704 to provide adhesion of the donor die 704 to the die clamps 768. The die clamp 768 may be actuated by a voltage signal received at a die actuator electrode. The die platform 760 is depicted as being supported by at least two legs 782 (shown in the cross-sectional view), which are in turn supported by die actuator clamps 762 and a shear piezoelectric element 784. The position of the legs 782 supporting the die platform 760 may be adjusted through use of the shear piezoelectric elements 764, which may operate as a stepper in conjunction with two or more of the die actuator clamps 762. A stepper function, in which the two or more die actuator clamps 762 corresponding to a leg 782 supporting the die platform 760 alternatively grip and release may be used to eliminate hysteresis from movement of the die platform 760, where shear piezoelectric elements may be susceptible to hysteresis and drift. The legs 782 may be metal or other material able to withstand bending and forces consistent with the placement of the donor die 704 on the die platform 760 and placement of the donor die 704 on a target die (e.g., able to withstand pressure without breaking or able to spring back after deformation). Although two legs 782 are shown supporting the die platform 760, it should be understood that more legs 782 may be used, and that legs 782 may not be in plane with one another inthe y-plane (as shown for ease of description only). The legs 782 may be further constructed to withstand forces from die placement, such as by incorporating a leafspring, other spring element, bent element, etc. The legs 782 may be formed by wire-electrical discharge machining (wire-EDM), by laser cutting, etc. The legs 782 may have an angle with respect to the base of the die platform (e.g., the foot) or with respect to the die platform (e.g., with respect to the donor die). The thickness of the leg 782 may be adjusted in order to adjust the stiffness of the die platform 760.

[0132] Figure 7D also depicts the release of the donor die 704 from the shuttle 710 by use of the die actuators. The release of the donor die 704 from the shuttle 710 may be accomplished by passive or active means. The donor die 704 may be actively pushed off of the die actuator, such as by reverse biasing of the die clamp 768. In some embodiments, the holding element holding the donor die to the die actuator (such as the die clamp 768) may be turned off, and the donor die 704 may fall or be attracted (such as electrically) to a target location.

[0133] Figure 8 is a schematic diagram illustrating an example dual tracked apparatus and method for continuous die placement. Figure 8 is a cross-sectional view of steps in a continuous process for bonding of donor die (e.g., donor die 8OOA-8OOH) to target die (e.g., target die 802A-802G). As previously explained, “donor” and target” are relative descriptors used for ease of description, and any “donor” die may instead be a “target” die and vice versa and any “donor” associated apparatus (such as a donor track, donor shuttle, etc.) may instead be a “target” associated apparatus (such as a target track, target shuttle, etc.) and vice versa. Any of the “donor” and “target” die described herein may contain multiple die (such as two or more die or the same or different types, including undiced, partially diced, previously bonded, stacked, etc. die).

[0134] Figure 8 depicts placement of donor die donor die (e.g., donor die 8OOA-8OOH) on target die (e.g., target die 802A-802G) by use of donor track 820 and donor shuttles 81OA-81OI and target track 822 and target shuttles 812A-812F. In Figure 8, the target die (e.g., target die 802A-802G) are supported by carrier structure of donor shuttles 81OA-81OI and donor die (e.g., donor die 802A-802G) are supported by carrier structure of target shuttles 812F. The donor die may be the same or different, e.g., die of different dimensions, different types of die, etc. The donor shuttles may be the same or different, e.g., containing different types of die, different numbers of die, etc. The target die may be the same or different, e.g., die of different dimensions, different types of die, etc. The target shuttles may be the same or different, e.g., containing different types of die, different numbers of die, etc. Each donor die (e.g., donor die 8OOA-8OOH) may have one or more alignment points, which may be any appropriate alignment points as previously described in reference to alignment points 303A-303C of Figures 3A-3J. Each target die (e.g., target die 802A-802G) may have one or more alignment points, which may be any appropriate alignment points as previously described in reference to alignment points 303A-303C of Figures 3A-3J. Each shuttle (e.g., donor shuttles 81OA-81OH and target shuttles 812A-812F) may have one or more alignment points, which may be any appropriate alignment point as previously described in reference to alignment point 315 of Figures 3A-3J. Theshuttles may be any appropriate shuttles, including those previously described in relation Figures 7A- 7D. The donor die (e.g., donor die 8OOA-8OOH) may be placed on the donor shuttles 81OA-81OI by any appropriate means, as previously described. The placement of the donor die on the donor shuttle is depicted for the donor die 800A on the donor shuttle 810A. The target die (e.g., target die 802A- 802G) may be placed on the target shuttles 812A-812F by any appropriate means, as previously described. The placement of the target die on the target shuttle is depicted for the target die 802A on the target shuttle 812A. The position of the donor die (e.g., donor die 8OOA-8OOH) may be measured by any appropriate means, such as by any appropriate location measurement apparatus, which may be any appropriate location measurement apparatus as previously described is relation to location measurement element 450 of Figure 4A. The position of the donor die (e.g., donor die 8OOA-8OOH) may be measured in any appropriate manner, such as previously described. The position of the donor die may be measured when the donor shuttle is at any appropriate position, as previously described in reference to Figure 6. The position of the target die (e.g., target die 802A-802G) may be measured by any appropriate means, such as by any appropriate location measurement apparatus, which may be any appropriate location measurement apparatus as previously described is relation to location measurement element 450 of Figure 4A. The position of the target die (e.g., target die 802A-802G) may be measured in any appropriate manner, such as previously described. The position of the target die may be measured when the target shuttle is at any appropriate position, as previously described in reference to the donor die of Figure 6

[0135] The donor die (e.g., donor die 8OOA-8OOH) are supported by donor shuttles 81OA-81OI, respectively. In Figure 8, multiple donor shuttles 81OA-81OI are depicted, each containing (or configured to contain) identical donor die (e.g., donor die 8OOA-8OOH), but, as previously described, the donor die and the donor shuttles may be the same or different. In some embodiments, one or more region of the donor shuttles 81OA-81OI may be at least partially transparent to at least a range of radiation in at least some regions, such as for radiation-mediated die transfer (such as previously described in relation to Figures 7A-7B). The target die (e.g., target die 802A-802F) are supported by target shuttles 812A-810H, respectively. In Figure 8, multiple donor shuttles 812A-812F are depicted, each containing (or configured to contain) identical target die (e.g., target die 802A-802F), but, as previously described, the target die and the target shuttles may be the same or different. The target die and the donor die and the donor shuttles and the target shuttles may also be the same or different. In some embodiments, one or more region of the target shuttles 812A-812F may be at least partially transparent to at least a range of radiation in at least some regions, such as for radiation -mediated die transfer (such as previously described in relation to Figures 7A-7B).

[0136] The donor track 822 may be any appropriate track, such as previously described in relation to the track 616 of Figure 6. The target track 822 may be any appropriate track, such as previously described in relation to the track 616 of Figure 6. The donor track 820 and the target track 822 may be the same, including translate, rotated, inverted, flipped, etc. versions or one another, or different. Thedonor track 820 and the target track 822 may use different methods of die placement, measurement, alignment, shuttle transport, die release, propulsion, position adjustment, etc. Although a donor track and a target track are depicted, multiple tracks may be used, including tracks in which donor or target die transfer between tracks with or without bonding, multiple tracks which perform die bonding for multiple dies (e.g., three stacked dies, placement of multiple donor die on a single target die, etc.). In some embodiments, the donor shuttles (81OA-81OH) may cross-over to the target track 822 and the target shuttles (812A-812F) may cross-over to the donor track.

[0137] The donor shuttles (e.g., donor shuttles 81OA-81OI) may travel about the donor track 820 continuously (which, as previously described, does not preclude stops during one or more subprocess). The donor shuttles (e.g., donor shuttles 81OA-81OI) may travel independently of one another. That is, the travel of a first shuttle may be faster, slower, in a different direction, etc. with respect to the donor track 820 than the travel of another shuttle. The donor shuttles (e.g., donor shuttles 81OA-81OI) may travel at any appropriate speed, including at variable speeds during the continuous die bonding process. The donor shuttles (e.g., donor shuttles 81OA-81OI) may be moveable about the track in at least a first process direction. In some embodiments, the donor shuttles (e.g., donor shuttles 81OA-81OI) may be moveable in a second direction, which may be a backwards direction with respect to the first process direction. In some embodiments, the donor shuttles (e.g., donor shuttles 81OA-81OI) may pass one another, including through use of a siding or any other appropriate track area. The donor shuttles (e.g., shuttles donor 81OA-81OI) may be capable of movement in directions other than the one or more directions of travel, as previously described in relation to the shuttles 610A-610H of Figure 6. The donor die (e.g., donor die 8OOA-8OOH) may be positionable with respect to the shuttle (e.g., donor shuttles 81OA-81OH), and therefore positionable with respect to the donor track 820 independently (e.g., to within a range of allowed positions) of the shuttle (e.g., donor shuttles 81OA-81OI) position. The donor die may be positionable, with respect to the shuttle, in up to two degrees of freedom (e.g., about the face of the shuttle), in up to four degrees of freedom (including rotation about the axes of the face of the shuttle), in up to three degrees of freedom (e.g., in the x, y, and z direction), in up to six degrees of freedom (e.g., including rotationally in each of the x, y, and z directions), etc. The donor die may be positionable in different directions by different means, such as by any appropriate actuator as previously described.

[0138] The target shuttles (e.g., target shuttles 812A-812F) may travel about the target track 822 continuously (which, as previously described, does not preclude stops during one or more subprocess). The target shuttles (e.g., target shuttles 812A-812F) may travel independently of one another. That is, the travel of a first shuttle may be faster, slower, in a different direction, etc. with respect to the target track 822 than the travel of another shuttle. The target shuttles (e.g., target shuttles 812A-812F) may travel at any appropriate speed, including at variable speeds during the continuous die bonding process. The target shuttles (e.g., target shuttles 812A-812F) may be moveable about the track in at least a first process direction. In some embodiments, the target shuttles(e.g., target shuttles 812A-812F) may be moveable in a second direction, which may be a backwards direction with respect to the first process direction. In some embodiments, the target shuttles (e.g., target shuttles 812A-812F) may pass one another, including through use of a siding or any other appropriate track area. The target shuttles (e.g., target shuttles 812A-812F) may be capable of movement in directions other than the one or more directions of travel, as previously described in relation to the shuttles 610A-610H of Figure 6. The target die (e.g., target die 802A-802G) may be positionable with respect to the target shuttle (e.g., target shuttles 812A-812F), and therefore positionable with respect to the donor track 820 independently (e.g., to within a range of allowed positions) of the donor shuttle (e.g., target shuttles 812A-812F) position. The donor die may be positionable, with respect to the shuttle, in up to two degrees of freedom (e.g., about the face of the shuttle), in up to four degrees of freedom (including rotation about the axes of the face of the shuttle), in up to three degrees of freedom (e.g., in the x, y, and z direction), in up to six degrees of freedom (e.g., including rotationally in each of the x, y, and z directions), etc. The target die may be positionable in different directions by different means, such as by any appropriate actuator as previously described.

[0139] Example positions and operations of the donor shuttles (e.g., donor shuttles 81OA-81OH) on the donor track 820 will now be further discussed and of the target shuttles (e.g., target shuttles 812A- 812F) may be any appropriate positions and operations, such as those described in reference to Figure 6. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to any operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., the operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as happening in discrete positions (such as when movement of the shuttles, but the positions may instead correspond to continuous movement or operations may occur while the shuttle is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0140] Figure 9 is a flowchart which illustrates an exemplary method of die placement. Each of these operations is described in detail below. The operations of method 900 presented below are intended to be illustrative. In some embodiments, method 900 may be accomplished with one or more additional operations not described, and / or without one or more of the operations discussed. Additionally, the order in which the operations of method 900 are illustrated in Figure 9 and described below is not intended to be limiting. In some embodiments, one or more portions of method 900 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices executing some or all of the operations of method 900 in response to instructions stored electronically on an electronic storage medium. The one or more processing devices may include one or more devices configured through hardware, firmware, and / or software to be specifically designed for execution of one or more of the operations of method 900, for example.

[0141] At an operation 910, a plurality of donor die locations are obtained. The donor die locations may be obtained via measurement of one or more positions of the donor dies along one or more dimensions. The donor dies may lie on or be part of a donor substrate (e.g., a carrier structure, a semiconductor substrate, etc.), and the locations of the plurality of donor dies may be obtained with respect to that donor substrate. The locations of the plurality of donor die may be measured with respect to a measurement mark. The locations of the plurality of donor dies may be measured in-plane (e.g., in the x-y plane). The locations of the plurality of donor dies may also be measured via a first method in-plane and measured out of plane (e.g., in the Z direction) via a second method. For example, the locations of the plurality of donor dies may be measured based on one or more images in-plane. The locations of the plurality of donor dies may be obtained from a two-dimensional image, which may show locations of an edges or corner of a donor die with respect to positions on a support structure or on a die actuator. The locations of the plurality of donor dies may be obtained based on one or more features (for example, one or more electrically active areas) on an exposed surface of the donor die. These one or more features of the donor die may be used as an alignment mark or reference mark. In some embodiments, alignment marks may be included as exposed features of the donor die. The alignment marks may be specifically added for die bonding or may be alignment marks corresponding to previous fabrication steps. The plurality of donor die locations may be measured or obtained from storage.

[0142] At an operation 920, a plurality of target die locations are obtained. The target dies may lie on or be part of a target substrate (e.g., a carrier structure, a semiconductor substrate, etc.), and the locations of the plurality of target dies may be obtained with respect to that target substrate. The locations of the plurality of target die may be obtained in any appropriate method, including any of those described in reference to the operation 910.

[0143] At an operation 930, a donor die is selected from the plurality of donor dies. The donor die may be selected based on position (e.g., along a row, along a column), displacement (e.g., donor die closest to an ideal position), thickness (e.g., thicker dies may be placed before thinner dies, including if donor dies include two or more types of dies), etc. The donor die may have a corresponding target die, such as a target die in a corresponding location on a target substrate (e.g., target die carrier structure). In some embodiments, a target die may be selected, by any appropriate method, and a donor die selected based on its correspondence to the selected target die. The donor die and the target die may be brought together such that donor die and its corresponding target die are separated by a distance which may be traversed by the die placement method. The donor die and target die may be grossly aligned (e.g., coarse aligned), such as to within a threshold of coarse alignment. The donor die and target die may be held in proximity by one or more substrates, chucks, actuators, adhesives, etc.

[0144] At an operation 940, the relative position between the selected donor die and the corresponding target die is adjusted to have alignment between the donor die and the corresponding target die. Adjusted includes cases in which locations are minimally or substantially not adjusted (e.g.,after measurement or bringing into proximity), such as if a measured location corresponds to the target location within a threshold. In an embodiment, the position of the donor die may be adjusted by action of a die actuator, a substrate holder, a chuck, etc. The position of the donor die may be adjusted by action of a substrate handling apparatus. The position of the donor die may be adjusted in one or more directions, such as in the X-Y plane. Alternatively or additionally to adjustment of the location of the donor die, the position of the target die may be adjusted, by any appropriate method, such as any of those previously described. Adjustment of the relative position between the donor and target die may include iterative measurement of donor and / or target die location, including as adjustment occurs.

[0145] Adjustment of the location of the donor die may occur based on an alignment location for the donor die. The alignment location may be a target (e.g., target location) for placement of the donor die. A target (e.g., target location) may be obtained, such as at operation 920, from measurement of the target die position. The target may correspond to a location of the target die. The target may correspond to a plurality of locations on the target die. The target may be a position (e.g., a position in three dimensions such as along X, Y, and Z axes, positions in six directions such as along X, Y, and Z axes and with respect to angles of rotation about those axes, etc.). The target may be a set of positions, for example two or more positions of or on a target die to which areas of the donor die are to be bonded. Additionally or alternatively, adjustment of the location of the target die may occur based on an alignment location for the target die. The alignment location may be a target (e.g., target location) for placement of the donor die. A target (e.g., target location) may be obtained, such as at operation 910, from measurement of the donor die position. The target may correspond to a location of the donor die. The target may correspond to a plurality of locations on the donor die.

[0146] At an operation 950, the selected donor die is placed on the corresponding target die. The donor die may be placed on the target die by any appropriate method, such as by movement of a die actuator, by radiation-mediated bonding, by stamping, by electrostatic attraction, etc. The donor die may experience alignment, including self-alignment, as the donor die is brought into contact with the target die. The donor die may be adhered to the target die as it contacts the target die, such as by van der Waals forces. In some embodiments, an additional donor die may be placed on the same or different target die.

[0147] At an operation 960, it is determined if additional donor die remain for placement. If additional donor die (e.g., on the donor substrate or substrate) remain for placement, the flow continues to the operation 930 where another donor die is selected. If no additional donor die remain for placement, flow continues to operation 970, where the bonding of the plurality of dies is completed.

[0148] In an embodiment, a particular donor die and target die are bonded at the time the donor die is placed on the target die, e.g., through intermolecular bonding. In an embodiment, the donor die is bonded, such as through annealing or other bonding process, to the target die after placement of thedonor die on the target die. In an embodiment, a bonding of a donor and target die is completed before a next donor die is placed on a target die. In an embodiment, bonding of a donor and target die is completed after a plurality of donor dies are placed on respective target dies, e.g., after all the donor dies on a donor substrate are placed. In an embodiment, a donor die placed on a target die is annealed to form or enhance electrical connection. In an embodiment, the annealing of a particular donor die and target die can be done prior to a next donor die is placed on a target die. In an embodiment, annealing of a donor and target die is completed after a plurality of donor dies are placed on respective target dies, e.g., after all the donor dies on a donor substrate are placed. The donor die may be held against the target die for a bonding or annealing time period. A donor die and target die pair may be released from a substrate or other holding apparatus before annealing or after annealing has occurred.

[0149] As described above, method 900 (and / or the other methods and systems described herein) is configured for die placement.

[0150] Figure 10 is a flowchart which illustrates an exemplary method of continuous die placement. Each of these operations is described in detail below. The operations of method 1000 presented below are intended to be illustrative. In some embodiments, method 1000 may be accomplished with one or more additional operations not described, and / or without one or more of the operations discussed. Additionally, the order in which the operations of method 1000 are illustrated in Figure 10 and described below is not intended to be limiting. In some embodiments, one or more portions of method 1000 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices executing some or all of the operations of method 1000 in response to instructions stored electronically on an electronic storage medium. The one or more processing devices may include one or more devices configured through hardware, firmware, and / or software to be specifically designed for execution of one or more of the operations of method 1000, for example.

[0151] At an operation 1010, one or more die is placed on a positionable structure. The positionable structure may be a shuttle on a track or any other appropriate positionable structure. The structure may be positionable in any appropriate number of dimensions. The positionable structure may be positionable to within any appropriate range, which may include a range for gross adjustment, such as in a direction of travel about a track, and which may include a range for fine adjustment, such as to within 10s of nm for metrology. The die may be placed on the positionable structure by any appropriate means, including by a die shooter, by a pick and place apparatus, etc. The one or more die may be placed on one or more region of the positionable structure capable of accepting a die. The die may be held to the positionable structure by any appropriate means, including surface tension, static friction, gravitational forces, chemical adhesion, electrostatics, etc. In some embodiments, the one or more die may be placed on one or more actuators (e.g., mechanical actuators, chemical actuators, including adhesive capable of radiation-mediated volumetric expansion, etc.) which may beinterposed between the die and the positionable structure, be part of the positionable structure, etc.

[0152] At an operation 1020, it is determined if the die requires processing for die bonding. This may be determined by a processing device in communication with the apparatus for die bonding, such as by communication with one or more measurement tools. The determination may be made based on a qualitative or quantitative measurement of the die, including a measurement that occurs previous to the die placement on the positionable structure, subsequent to the die placement on the previous structure, etc. The determination may be pre-determined, e.g., all die placed on the positionable structure may first be measured, after which additional determination may be made. The determination may be made based on previous processing (e.g., sub-processes) applied to the die. For example, in some embodiments, a die may be hydrogen passivated before any die bonding, even if measurement indicates that the die is already passivated. In some embodiments, a determination may be made that a die does not qualify for die bonding, and it may be discarded, re -processed, sent for further testing, etc. If the die is accepted for die bonding without additional processing, flow may continue at operation 1040. If the die requires additional processing, flow may continue at operation 1030.

[0153] At an operation 1030, the die may be moved to a location corresponding to one or more subprocess of the die bonding process. The die may be moved by movement of the positionable structure, such as along a track. The die may be moved by actuation of one or more die actuations. The one or more sub-process may be any one or more of the following: measurement (gross, fine, etc.) of position, such as relative to any appropriate reference such as a position on positionable structure, in free space, etc.; metrology, such as overlay, critical dimension, etc. such as for determining if one or more photolithography process performed on the die is successful to within a process parameter; cleaning, including plasma cleaning, oxidative cleaning, polishing, particle removal, etc.; dicing, separating, or removal of one or more volumetric area of the die, including etching; flatness and / or particulate metrology, such as for qualifying or qualifying a success of a cleaning process; passivation, including hydrogen bond passivation, coating, etc.; position adjustment, in any appropriate direction to any appropriate distance, including angular position adjustment; placement of die on target locations, including radiation-mediated die placement, gravitational die placement, selfaligned die placement, etc.; and annealing or any other appropriate heat or electrical treatment, such as electrically mediated metallic expansion. Any other appropriate sub-processes compatible with the positionable structure may also or instead be performed. Multiple sub-processes may be performed at one location of the positionable structure. One sub-process may be performed at multiple locations of the positionable structure. Multiple sub-processes, including performed on multiple die, may occur sequentially or concurrently. Once a sub-process is completed, it may be determined if the die requires additional processing before die bonding.

[0154] At an operation 1040, if the die is accepted for die bonding, the die may be placed on a target location. The die may be released from the positionable structure before, during, or after placement ofthe die on the target location. The die may be bonded to the target location by hydrogen bonds. The die may be bonded to the target location by metallic bonds. The die may be annealed, including on or off of the positionable structure. The die may be further processes, once placed on the target location. If additional die remain for bonding, the positionable structure may receive an additional die for die bonding.

[0155] As described above, method 1000 (and / or the other methods and systems described herein) is configured for radiation mediated die release.

[0156] In an embodiment, the techniques and apparatus herein can be applied to die to die bonding, substrate to substrate bonding, die to substrate bonding, etc. For example, the techniques and apparatus herein can be applied to bonding an individual donor die to an individual target die. In an embodiment, the techniques and apparatus herein can be applied to bonding a group of donor dies to one or more target dies at a substantially same time or a group of target dies to one or more donor dies at a substantially same time. In an embodiment, the techniques and apparatus herein can be applied to bonding one or more donor dies to a substrate comprising one or more target dies formed therein or thereon or bonding one or more target dies to a substrate comprising one or more donor dies formed therein or thereon. In an embodiment, the techniques and apparatus herein can be applied to bonding a full or partial substrate comprising donor dies to one or more target dies or bonding a full or partial substrate comprising target dies to one or more donor dies. Thus, the techniques and apparatus herein can be applied to practically every form of die bonding, whether bonding dies individually, bonding dies in a group, bonding dies as part of a full or partial substrate, etc.

[0157] Figure 11 is a diagram of an example computer system CS that may be used to implement one or more of the operations described herein. Computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (or multiple processors) coupled with bus BS for processing information. Computer system CS also includes a main memory MM, such as a random-access memory (RAM) or other dynamic storage device, coupled to bus BS for storing information and instructions to be executed by processor PRO. Main memory MM also may be used for storing temporary variables or other intermediate information during execution of instructions by processor PRO. Computer system CS further includes a read only memory (ROM) ROM or other static storage device coupled to bus BS for storing static information and instructions for processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to bus BS for storing information and instructions.

[0158] Computer system CS may be coupled via bus BS to a display DS, such as a cathode ray tube (CRT) or flat panel or touch panel display for displaying information to a computer user. An input device ID, including alphanumeric and other keys, is coupled to bus BS for communicating information and command selections to processor PRO. Another type of user input device is cursor control CC, such as a mouse, a trackball, or cursor direction keys for communicating direction information and command selections to processor PRO and for controlling cursor movement ondisplay DS. This input device typically has two degrees of freedom in two axes, a first axis (e.g., x) and a second axis (e.g., y), that allows the device to specify positions in a plane. A touch panel (screen) display may also be used as an input device.

[0159] In some embodiments, portions of one or more methods described herein may be performed by computer system CS in response to processor PRO executing one or more sequences of one or more instructions contained in main memory MM. Such instructions may be read into main memory MM from another computer-readable medium, such as storage device SD. Execution of the sequences of instructions included in main memory MM causes processor PRO to perform one or more process steps (operations) described herein. One or more processors in a multi-processing arrangement may also be employed to execute the sequences of instructions contained in main memory MM. In some embodiments, hard-wired circuitry may be used in place of or in combination with software instructions. Thus, the description herein is not limited to any specific combination of hardware circuitry and software.

[0160] The term “computer-readable medium” and / or “machine readable medium” as used herein refers to any medium that participates in providing instructions to processor PRO for execution. Such a medium may take many forms, including but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as storage device SD. Volatile media include dynamic memory, such as main memory MM. Transmission media include coaxial cables, copper wire and fiber optics, including the wires that comprise bus BS. Transmission media can also take the form of acoustic or radiation waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer- readable media can be non-transitory, for example, a floppy disk, a flexible disk, hard disk, magnetic tape, any other magnetic medium, a CD-ROM, DVD, any other optical medium, punch cards, paper tape, any other physical medium with patterns of holes, a RAM, a PROM, and EPROM, a FLASH- EPROM, any other memory chip or cartridge. Non-transitory computer readable media can have instructions recorded thereon. The instructions, when executed by a computer, can implement any of the operations described herein. Transitory computer-readable media can include a carrier wave or other propagating electromagnetic signal, for example.

[0161] Various forms of computer readable media may be involved in carrying one or more sequences of one or more instructions to processor PRO for execution. For example, the instructions may initially be borne on a magnetic disk of a remote computer. The remote computer can load the instructions into its dynamic memory and send the instructions over a telephone line using a modem. A modem local to computer system CS can receive the data on the telephone line and use an infrared transmitter to convert the data to an infrared signal. An infrared detector coupled to bus BS can receive the data carried in the infrared signal and place the data on bus BS. Bus BS carries the data to main memory MM, from which processor PRO retrieves and executes the instructions. The instructions received by main memory MM may optionally be stored on storage device SD eitherbefore or after execution by processor PRO.

[0162] Computer system CS may also include a communication interface CI coupled to bus BS. Communication interface CI provides a two-way data communication coupling to a network link NDL that is connected to a local network LAN. For example, communication interface CI may be an integrated services digital network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, communication interface CI may be a local area network (LAN) card to provide a data communication connection to a compatible LAN. Wireless links may also be implemented. In any such implementation, communication interface CI sends and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various types of information.

[0163] Network link NDL typically provides data communication through one or more networks to other data devices. For example, network link NDL may provide a connection through local network LAN to a host computer HC. This can include data communication services provided through the worldwide packet data communication network, now commonly referred to as the “Internet” INT. Local network LAN (Internet) may use electrical, electromagnetic, or optical signals that carry digital data streams. The signals through the various networks and the signals on network data link NDL and through communication interface CI, which carry the digital data to and from computer system CS, are exemplary forms of carrier waves transporting the information.

[0164] Computer system CS can send messages and receive data, including program code, through the network(s), network data link NDL, and communication interface CI. In the Internet example, host computer HC might transmit a requested code for an application program through Internet INT, network data link NDL, local network LAN, and communication interface CI. One such downloaded application may provide all or part of a method described herein, for example. The received code may be executed by processor PRO as it is received, and / or stored in storage device SD, or other nonvolatile storage for later execution. In this manner, computer system CS may obtain application code in the form of a carrier wave.

[0165] Further embodiments of the invention are disclosed in the list of numbered clauses below:1. A system for die bonding, the system comprising: a donor stage configured to accept one or more donor dies and configured to move the one or more donor dies to different locations; an acceptor stage configured to provide one or more acceptor positions; a measurement system configured to measure a position of the one or more donor dies relative to the donor stage and configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and a processor system configured to drive, based on the measured position of the one or more dies and / or measured position of the one or more acceptor positions, at least the donor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.2. The system of clause 1 , wherein the processor system is configured to sequentially drive theacceptor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for sequential bonding of donor dies to corresponding acceptor positions.3. The system of clause 1 or clause 2, wherein the donor stage is configured to move along a linear and / or circular path.4. The system of any preceding clause, configured such that the one or more donor dies are placed on the donor stage when the donor stage is at a first location, the position of the one or more donor dies is measured when the donor stage is at a second location, and the one or more donor dies are aligned with the one or more acceptor positions when the donor stage is at a third location.5. The system of clause 4, further comprising at least one selected from: an inspection system configured to inspect the one or more donor dies for defects; a coarse placement system configured to place the one or more donor dies on the donor stage; a cleaning system configured to clean a bonding surface of the one or more donor dies; a plasma system configured to plasma treat a bonding surface of the one or more donor dies; a flatness detection system configured to determine a flatness of the one or more donor dies; a leveling system configured to level the one or more donor dies; a coarse alignment system configured to provide a first alignment of a donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions; a die positioner configured to adjust the position of a die with respect to the donor stage; and / or a fine alignment system configured to provide a second alignment of the donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions.6. The system of any preceding clause, wherein the acceptor stage is configured to move the one or more acceptor positions between additional locations.7. The system of clause 6, configured such that the one or more acceptor positions are moved to the acceptor stage when the acceptor stage is at a fourth location, the positions of the one or more acceptor positions are measured when the acceptor stage is at a fifth location, and the one or more donor dies are aligned with the one or more acceptor positions when the acceptor stage is at a sixth location.8. The system of clause 6 or clause 7, wherein the processor is further configured to drive the acceptor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.9. The system of any of clauses 6 to 8, configured such that the acceptor stage moves about a plane.10. The system of any of clauses 6 to 9, configured such that the donor stage moves at least in part in a direction perpendicular to movement of the acceptor stage.11. The system of any preceding clause, configured to move the donor stage substantially continuously between locations during die bonding processing.12. The system of clause 11, wherein the substantially continuous movement of the donor stage comprises adjustment of the position of the one or more donor dies with respect to the acceptor stage.13. The system of any preceding clause, wherein the acceptor stage is configured to move the one or more acceptor positions and the system is configured to move the acceptor stage substantially continuously during die bonding processing.14. The system of clause 13, wherein the substantially continuous movement of the acceptor stage comprises adjustment of the position of the one or more acceptor positions relative to the donor stage.15. The system of any preceding clause, comprising multiple donor stages.16. The system of clause 15, configured to move the multiple donor stages substantially continuously during die bonding processing.17. The system of clause 15 or clause 16, configured to move the multiple donor stages asynchronously.18. The system of any of clauses 15 to 17, wherein the multiple donor stages comprise shuttles.19. The system of any of clauses 15 to 18, wherein the multiple donor stages are track-driven.20. The system of any preceding clause, wherein the acceptor stage and the donor stage are substantially identical.21. A high- volume manufacturing tool comprising the system of any of preceding clause.22. A method for die bonding, the method comprising: causing a donor stage to transport one or more donor dies to a measurement system, the measurement system configured to measure a position of the one or more donor dies relative to the donor stage; causing an acceptor stage to transport one or more acceptor positions to the measurement system, the measurement system configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and based on the measured position of the one or more donor dies and / or the measured position of the one or more acceptor positions, driving the donor stage to align one or more of the one or more donor dies with corresponding one or more of the one or more acceptor positions for die bonding.23. The method of clause 22, further comprising bonding the one or more of the one or more donor dies to the corresponding one or more of the one or more acceptor positions.24. The method of clause 22 or clause 23, further comprising aligning a further one of the one or more donor dies with a corresponding further one of the one or more acceptor positions for die bonding.25. The method of clause 24, further comprising bonding the further one of the one or more donor dies to the corresponding further one of the one or more acceptor positions.26. The method of any of clauses 22 to 25, further comprising at least one selected from: placing, by a die placement system, the one or more donor dies on the donor stage; inspecting the one or more donor dies for defects; cleaning, by a non-plasma system, the one or more donor dies; cleaning, by a plasma system, the one or more donor dies; detecting, by a flatness sensor, flatness of the one or more donor dies; leveling, by one or more actuators, the one or more donor dies; adjusting, by one or moredie positioners, a position of a donor die of the one or more donor dies relative to the donor stage to provide a first alignment to the donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions; aligning, by a coarse adjustment system, the donor stage with the acceptor stage; and aligning, by a fine alignment system, the donor stage with the acceptor stage to provide a second alignment to a donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions.27. The method of any of clauses 22 to 26, wherein causing the donor stage to transport the one or more donor dies comprises causing the donor stage to move about a track.28. The method of any of clauses 22 to 27, wherein causing the donor stage to transport the one or more donor dies comprises causing the donor stage to move substantially continuously during die bonding processing.29. The method of any of clauses 22 to 28, wherein causing the acceptor stage to transport the one or more acceptor positions comprises causing the acceptor stage to move about a plane.30. The method of any of clauses 22 to 29, further comprising: causing one or more additional donor stages to transport one or more additional donor dies to the measurement system for measurement of a position of the one or more additional donor dies relative to the one or more additional donor stages; based on the measured position of the one or more additional donor dies and / or the measured position of the one or more acceptor positions, driving the one or more additional donor stages to align one or more of the one or more additional donor dies with corresponding one or more of the one or more acceptor positions for die bonding.31. The method of any of clauses 22 to 30, further comprising: causing one or more additional acceptor stages to transport one or more additional acceptor positions to the measurement system for measurement of a position of the one or more additional acceptor positions relative to the one or more additional acceptor stages; based on the measured position of the one or more donor dies and / or the measured position of the one or more additional donor dies and / or the measured position of the one or more additional acceptor positions, driving the donor stage and / or the one or more additional donor stages to align the one or more donor dies and / or the one or more additional donor dies with corresponding one or more of the one or more additional acceptor positions for die bonding.32. The method of any of clauses 22 to 31 , wherein the one or more acceptor positions comprise positions on an acceptor wafer.33. The method of any of clauses 22 to 32, wherein the one or more acceptor positions comprise positions of one or more acceptor dies.34. One or more non-transitory, machine -readable medium having instructions therein, the instructions, when executed by a processor system, configured to cause the processor system to perform at least the method of any of clauses 22 to 33.

[0166] While the concepts disclosed herein may be used for manufacturing with a substrate such as asilicon wafer, it shall be understood that the disclosed concepts may be used with any type of manufacturing system (e.g., those used for manufacturing on substrates other than silicon wafers).

[0167] In addition, the combination and sub-combinations of disclosed elements may comprise separate embodiments. For example, one or more of the operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0168] The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made as described without departing from the scope of the claims set out below.

Claims

CLAIMS1. A system for die bonding, the system comprising: a donor stage configured to accept one or more donor dies and configured to move the one or more donor dies to different locations; an acceptor stage configured to provide one or more acceptor positions; a measurement system configured to measure a position of the one or more donor dies relative to the donor stage and configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and a processor system configured to drive, based on the measured position of the one or more dies and / or measured position of the one or more acceptor positions, at least the donor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.

2. The system of claim 1 , wherein the processor system is configured to sequentially drive the acceptor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for sequential bonding of donor dies to corresponding acceptor positions.

3. The system of claim 1, wherein the donor stage is configured to move along a linear and / or circular path.

4. The system of claim 1 , configured such that the one or more donor dies are placed on the donor stage when the donor stage is at a first location, the position of the one or more donor dies is measured when the donor stage is at a second location, and the one or more donor dies are aligned with the one or more acceptor positions when the donor stage is at a third location.

5. The system of claim 4, further comprising at least one selected from: an inspection system configured to inspect the one or more donor dies for defects; a coarse placement system configured to place the one or more donor dies on the donor stage; a cleaning system configured to clean a bonding surface of the one or more donor dies; a plasma system configured to plasma treat a bonding surface of the one or more donor dies; a flatness detection system configured to determine a flatness of the one or more donor dies; a leveling system configured to level the one or more donor dies; a coarse alignment system configured to provide a first alignment of a donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions;a die positioner configured to adjust the position of a die with respect to the donor stage; and / or a fine alignment system configured to provide a second alignment of the donor die of the one or more donor dies with respect to a corresponding acceptor position of the one or more acceptor positions.

6. The system of claim 1 , wherein the acceptor stage is configured to move the one or more acceptor positions between additional locations.

7. The system of claim 6, configured such that the one or more acceptor positions are moved by the acceptor stage when the acceptor stage is at a fourth location, the positions of the one or more acceptor positions are measured when the acceptor stage is at a fifth location, and the one or more donor dies are aligned with the one or more acceptor positions when the acceptor stage is at a sixth location.

8. The system of claim 6, wherein the processor is further configured to drive the acceptor stage to align a donor die of the one or more donor dies to a corresponding acceptor position of the one or more acceptor positions for bonding of the donor die to the corresponding acceptor position.

9. The system of claim 6, configured such that the acceptor stage moves within a plane.

10. The system of claim 6, configured such that the donor stage moves at least in part in a direction perpendicular to movement of the acceptor stage.

11. The system of claim 1, comprising multiple donor stages.

12. A method for die bonding, the method comprising: causing a donor stage to transport one or more donor dies to a measurement system, the measurement system configured to measure a position of the one or more donor dies relative to the donor stage; causing an acceptor stage to transport one or more acceptor positions to the measurement system, the measurement system configured to measure a position of the one or more acceptor positions relative to the acceptor stage; and based on the measured position of the one or more donor dies and / or the measured position of the one or more acceptor positions, driving the donor stage to align one or more of the one or more donor dies with corresponding one or more of the one or more acceptor positions for die bonding.

13. The method of claim 12, further comprising bonding the one or more of the one or more donor dies to the corresponding one or more of the one or more acceptor positions.

14. The method of claim 12, further comprising aligning a further one of the one or more donor dies with a corresponding further one of the one or more acceptor positions for die bonding.

15. The method of claim 14, further comprising bonding the further one of the one or more donor dies to the corresponding further one of the one or more acceptor positions.

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