Lamp bead structure, LED lamp panel, and method for processing and preparing lamp bead structure

Abstract

The present application relates to a lamp bead structure, an LED lamp panel, and a method for processing and preparing a lamp bead structure. The lamp bead structure comprises a substrate, a light-emitting chip assembly, and a first dam. The light-emitting chip assembly is disposed on the substrate. The first dam is disposed on the substrate, and a plurality of first dams are provided. The plurality of first dams are connected end to end and arranged around the periphery of the light-emitting chip assembly. The refractive index of the first dam is higher than that of the external environment. The outer surface of the first dam on the side close to the light-emitting chip assembly is a first surface, and the first surface has a curved structure. The side of the first dam facing away from the light-emitting chip assembly is a second surface, and the second surface has a planar structure. After the light-emitting chip assembly emits a light beam, the light beam can be reflected on the first surface, increasing the top-side light output of the light-emitting chip assembly and improving the display effect of the LED lamp panel in semi-outdoor environments; moreover, part of the light beam can pass through the first dam and be refracted at the second surface, thereby enhancing the side light output rate of the light-emitting chip assembly.

Description

Lamp bead structure, LED lamp panel and processing and preparation method of lamp bead structure

[0001] Cross-reference to Related Applications

[0002] This application claims priority to Chinese Patent Application No. 202410705930.0, filed May 31, 2024, entitled “Lamp bead structure, LED lamp panel and processing and preparation method of lamp bead structure,” which is incorporated by reference herein in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of LED light sources, in particular to a lamp bead structure, an LED lamp panel and a processing and preparation method of the lamp bead structure. BACKGROUND

[0004] LED lamps are widely used in lighting and display fields due to their excellent performance. An LED lamp panel is an array of multiple lamp beads on a circuit board, and the lighting or display function is realized through the cooperation of the multiple lamp beads. However, since the lamp beads emit light from five surfaces, the light output from the top of the lamp beads is weak, which results in poor display effect of the LED lamp panel in a semi-outdoor environment. SUMMARY

[0005] Therefore, it is necessary to provide a lamp bead structure to solve the problem of poor display effect of the LED lamp panel in a semi-outdoor environment.

[0006] A lamp bead structure includes:

[0007] a substrate;

[0008] a light emitting chip assembly disposed on the substrate;

[0009] a first dam disposed on the substrate, the number of the first dams is multiple, the multiple first dams are connected end to end and arranged in a ring around the outer periphery of the light emitting chip assembly; the refractive index of the first dam is higher than the refractive index of the external environment; the outer surface of the side of the first dam close to the light emitting chip assembly is a first surface, the first surface is a curved surface structure, and the side of the first dam away from the light emitting chip assembly is a second surface, the second surface is a flat surface structure.

[0010] In some embodiments, the first surface is a spherical surface structure.

[0011] In some embodiments, the cross section of the first dam perpendicular to the axial direction of itself is a quarter of an ellipse or a quarter of a circle.

[0012] In some embodiments, the height h of the first dam satisfies the condition: 0.12mm≤h≤0.16mm; and / or,

[0013] The width d of the first dam satisfies the condition: 0.05mm≤d≤0.15mm.

[0014] In some embodiments, a light diffusing agent is arranged in the first dam.

[0015] The application also provides an LED lamp panel comprising the lamp bead structure according to any one of the above embodiments, and the second surfaces of the plurality of lamp bead structures abut each other.

[0016] The application also provides a processing method of the lamp bead structure, which comprises:

[0017] providing a substrate, and arraying a plurality of light emitting chip components on the bearing surface of the substrate;

[0018] arranging a plurality of second dams connected head to tail around the periphery of each light emitting chip component;

[0019] cutting the second dams to form first dams;

[0020] The refractive index of the first dam is higher than that of the external environment, the outer surface of the side of the first dam close to the light emitting chip component is a first surface, the first surface is a curved surface structure, and the side of the first dam away from the light emitting chip component is a second surface, the second surface is a flat surface structure.

[0021] In some embodiments, the step of arranging a plurality of second dams connected head to tail around the periphery of each light emitting chip component specifically comprises:

[0022] arranging the second dams at the midlines of two adjacent groups of light emitting chip components by a dam machine.

[0023] In some embodiments, the cross section of the second dam perpendicular to the axial direction of itself is a half-elliptical or half-circular shape.

[0024] In some embodiments, the cross section of the first dam perpendicular to the axial direction of itself is a quarter-elliptical or quarter-circular shape.

[0025] When the LED lamp panel is prepared by the lamp bead structure, the first dam is connected head to tail and arranged around the outer periphery of the light emitting chip assembly, the refractive index of the first dam is higher than the refractive index of the external environment, the first surface of the first dam is a curved surface structure, and the second surface is a flat surface structure. Therefore, when the light emitting chip assembly emits light beams, the light beams can be reflected on the first surface, which not only increases the top light output of the light emitting chip assembly, but also makes the display effect of the LED lamp panel in a semi-outdoor environment better. Moreover, part of the light beams can pass through the first dam and be refracted at the second surface, thereby improving the side light output rate of the light emitting chip assembly. BRIEF DESCRIPTION OF DRAWINGS

[0026] Fig. 1 is a partial schematic view of an LED lamp panel according to some embodiments of the present application.

[0027] Fig. 2 is a cross-sectional view of A-A in Fig. 1.

[0028] Fig. 3 is a schematic view of a lamp bead structure according to some embodiments of the present application.

[0029] Fig. 4 is a schematic view of a first propagation path of light beams emitted by a light emitting chip assembly at a first dam.

[0030] Fig. 5 is a schematic view of a second propagation path of light beams emitted by a light emitting chip assembly at a first dam.

[0031] Reference signs: 100 - substrate; 200 - light emitting chip assembly; 210 - first light emitting chip; 220 - second light emitting chip; 230 - third light emitting chip; 300 - first dam; 310 - first surface; 320 - second surface; 400 - second dam. DETAILED DESCRIPTION

[0032] To make the above objectives, features and advantages of the present application more apparent and understandable, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. In the following description, a large number of specific details are set forth in order to facilitate a full understanding of the present application. However, the present application can be implemented in many different ways other than those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application, so the present application is not limited to the specific embodiments disclosed below.

[0033] In the description of the application, it should be understood that, if there are these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application.

[0034] In addition, if there are these terms "first", "second", these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In the description of the application, if the term "multiple" appears, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise explicitly specified.

[0035] In this application, unless otherwise explicitly specified and limited, if there are terms "installation", "connection", "connection", "fixation" and the like, these terms should be broadly understood. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0036] In this application, unless otherwise explicitly specified and limited, if there are similar descriptions such as "first feature on or under the second feature", the meaning can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" of the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" of the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0037] It is to be noted that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. In addition, it is to be understood that when a layer is referred to as being "connected", "coupled", or "supported" on another layer or substrate, it can be directly on the other layer or substrate or intervening layers can also be present. As used herein, the terms "vertical", "horizontal", "up", "down", "left", "right", and the like, are described with respect to the orientations shown in the drawings, and are merely for purposes of illustration and are not intended to be limiting.

[0038] LED lamp is widely used in the field of lighting and display due to its excellent performance. LED lamp panel is arranged with a plurality of lamp beads on a circuit board, and the lighting or display function is realized through the cooperation of the plurality of lamp beads. However, since the lamp bead is five-face light-emitting, the light-emitting quantity of the top of the lamp bead is weak, so that the display effect of the LED lamp panel in the semi-outdoor environment is poor.

[0039] Based on the above problems, the lamp bead structure is provided. Please refer to FIG. 3-5, FIG. 3 shows a schematic diagram of the lamp bead structure provided by some embodiments of the present application. FIG. 4 shows a schematic diagram of the first propagation path of the light beam emitted by the light-emitting chip assembly 200 at the first dam 300. FIG. 5 shows a schematic diagram of the second propagation path of the light beam emitted by the light-emitting chip assembly 200 at the first dam 300.

[0040] The lamp bead structure provided by some embodiments of the present application includes a substrate 100, a light-emitting chip assembly 200 and a first dam 300. The light-emitting chip assembly 200 is arranged on the substrate 100; the first dam 300 is arranged on the substrate 100, the number of the first dam 300 is multiple, and the multiple first dams 300 are connected end to end and arranged around the outer periphery of the light-emitting chip assembly 200; the refractive index of the first dam 300 is higher than the refractive index of the external environment, and specifically, the external environment is the environment used by the lamp bead structure, such as air and the like; the outer surface of the side of the first dam 300 close to the light-emitting chip assembly 200 is a first surface 310, the first surface 310 is a curved surface structure, and the side of the first dam 300 away from the light-emitting chip assembly 200 is a second surface 320, the second surface 320 is a planar structure.

[0041] When the lamp bead structure provided by the embodiments of the present application is used to prepare an LED lamp panel, since the first dam 300 is connected at the head and tail and annularly arranged at the outer periphery of the light emitting chip assembly 200, and the refractive index of the first dam 300 is higher than the refractive index of the external environment, and meanwhile the first surface 310 of the first dam 300 is a curved surface structure and the second surface 320 is a planar structure, when the light emitting chip assembly 200 emits light beams, the light beams can be reflected on the first surface 310 (as shown in FIG. 4), not only increasing the light output of the top of the light emitting chip assembly 200, but also making the display effect of the LED lamp panel better in a semi-outdoor environment. Meanwhile, part of the light beams can also pass through the first dam 300 and be refracted at the second surface 320, improving the light output rate of the side of the light emitting chip assembly 200.

[0042] Specifically, when part of the light beams emitted by the light emitting chip assembly 200 are incident on the first surface 310 from A01 shown in FIG. 4, part of the light beams are reflected on the first surface 310 and reflected to the top of the light emitting chip assembly 200 at 01B, and another part of the light beams passes through the first dam 300 along the path of O1O2 and is refracted at the second surface 320, and finally is emitted from the first dam 300 at O2D, thus increasing the light output of the top.

[0043] In some embodiments, the substrate 100 is a PCB (Printed Circuit Board).

[0044] Referring to FIGS. 1-3, in some embodiments, the light emitting chip assembly 200 includes a first light emitting chip 210, a second light emitting chip 220 and a third light emitting chip 230. The first light emitting chip 210, the second light emitting chip 220 and the third light emitting chip 230 can be red light emitting chips, green light emitting chips and blue light emitting chips, respectively.

[0045] In some embodiments, the first dam 300 is prepared by using dam glue, and the dam glue is a solidifying glue capable of being solidified. Specifically, the solidification mode of the dam glue is not limited to thermal solidification, normal temperature solidification and light solidification. If the temperature solidification mode is selected, the dam glue is epoxy resin, has high adhesive strength, and has high tensile strength, shear strength and durability after solidification, and can increase the protection performance and chemical resistance of the application product. If the light solidification mode is selected, the dam glue is UV glue, has high adhesive strength, and has fast solidification speed.

[0046] In some embodiments, a dam machine is used to perform the dam operation at the middle line of the adjacent light emitting chip assembly 200 on the substrate 100.

[0047] The lamp bead structure is described in detail as follows.

[0048] Please refer to FIG. 3-FIG. 5, in some embodiments, the first surface 310 is a quasi-spherical structure. By setting the first surface 310 as a quasi-spherical structure, the light beam emitted by the light-emitting chip assembly 200 can be better reflected at the first surface 310 on the quasi-spherical structure as shown in FIG. 4, thereby increasing the top light output of the light-emitting chip assembly 200, so that the display effect of the LED lamp panel in a semi-outdoor environment is better. Moreover, the light emitted by the light-emitting chip assembly 200 can be changed from a point light source to a surface light source as shown in FIG. 5 by the characteristics of the quasi-spherical structure itself, eliminating glare and making the light softer.

[0049] Please refer to FIG. 3-FIG. 5, in some embodiments, the first dam 300 is a quarter-elliptical or quarter-circular in cross section perpendicular to its own axial direction. When the axial direction of the first dam 300 is the xx' direction in FIG. 1, the cross section of the first dam 300 perpendicular to its own axial direction, that is, the yy' direction in FIG. 1, is a quarter-elliptical or quarter-circular. When the axial direction of the first dam 300 is the yy' direction in FIG. 1, the cross section of the dam perpendicular to its own axial direction, that is, the xx' direction in FIG. 1, is a quarter-elliptical or quarter-circular.

[0050] By setting the cross section of the first dam 300 perpendicular to its own axial direction as a quarter-elliptical or quarter-circular, when it is necessary to splice the lamp bead structure provided by the present application, the first surface 310 of two adjacent lamp bead structures can be abutted, so that the first dam 300 of two adjacent lamp bead structures can be spliced into a complete semi-elliptical or semi-circular, facilitating the splicing of multiple lamp bead structures.

[0051] Please refer to FIG. 3, in some embodiments, the height h of the first dam 300 satisfies the condition: 0.12mm≤h≤0.16mm. By setting the height h of the first dam 300 to be greater than or equal to 0.12mm and less than or equal to 0.16mm, the first dam 300 is not prone to be too high, so that the dam glue is not prone to collapse when the first dam 300 is prepared. At the same time, the effect of reflecting the light beam emitted by the light-emitting chip assembly 200 by the first dam 300 is good, which not only reduces the possibility of mutual light leakage when two adjacent light-emitting chip assemblies 200 emit light, but also avoids affecting the light-emitting angle of the light-emitting chip assembly 200 when the first dam 300 is too high.

[0052] In one specific embodiment, the height h of the first dam 300 is 0.12 mm. In another specific embodiment, the height h of the first dam 300 is 0.16 mm. In still another specific embodiment, the height h of the first dam 300 is 0.14 mm.

[0053] Referring to FIG. 3, in some embodiments, the width d of the first dam 300 satisfies the condition: 0.05 mm≤d≤0.15 mm. By setting the width d of the first dam 300 to be greater than or equal to 0.05 mm and less than or equal to 0.15 mm, the dam glue is less likely to abut against the light-emitting chip assembly 200 and cause the dam glue to climb on the light-emitting chip assembly 200 when the first dam 300 is prepared, so that the light-emitting effect of the light-emitting chip assembly 200 is better.

[0054] In one specific embodiment, the width d of the first dam 300 is 0.05 mm. In another specific embodiment, the width d of the first dam 300 is 0.15 mm. In still another specific embodiment, the width d of the first dam 300 is 0.10 mm.

[0055] In some embodiments, a light diffusing agent is arranged in the first dam 300. By arranging the light diffusing agent in the first dam 300, the light beams emitted by the light-emitting chip assembly 200 are refracted and reflected multiple times by the surface of the light diffusing agent, thereby changing the propagation direction of the light, so that the light is concentrated to a certain extent on the top of the light-emitting chip assembly 200, thereby increasing the light output on the top, while another part of the light is evenly emitted from the first surface 310, changing the point light source into a surface light source, eliminating the string light, making the light soft, and achieving the light diffusion effect. This method not only improves the light output on the top, but also improves the light output effect on the side.

[0056] In one specific embodiment, the light diffusing agent is silica particles, which have a high refractive index and scattering ability, and can cause the light incident on the surface thereof to be reflected and refracted multiple times, thereby achieving the effect of diffusing the light. In one specific embodiment, smaller silica particles are selected as the light diffusing agent, which have a stronger scattering effect.

[0057] Since the first dam 300 is provided with the light diffusing agent, and the refractive index of the first dam 300 is higher than that of the external environment, and the first surface 310 of the first dam 300 is a curved surface structure and the second surface 320 is a planar structure, when the light-emitting chip assembly 200 emits a light beam, the light beam can be reflected on the first surface 310 (as shown in FIG. 4), which can not only increase the top light output of the light-emitting chip assembly 200, but also make the display effect of the LED lamp panel better in a semi-outdoor environment. Meanwhile, part of the light beam can also pass through the first dam 300 and be refracted at the second surface 320, thereby improving the side light output of the light-emitting chip assembly 200. Moreover, the light emitted by the light-emitting chip assembly 200 can be changed from a point light source to a surface light source (as shown in FIG. 5) through the effect of the light diffusing agent, which eliminates glare and makes the light softer.

[0058] In some embodiments, the first dam 300 is further added with a black pigment. By adding the black pigment in the first dam 300, the first dam 300 has an optical absorption effect, thereby covering the base color of the substrate 100 and improving the color consistency of the entire LED lamp panel, so that the display panel prepared by the LED lamp panel has better contrast.

[0059] The application also provides an LED lamp panel. Please refer to FIG. 1, which shows a partial schematic view of the LED lamp panel according to some embodiments of the application. The LED lamp panel according to the embodiments of the application comprises the lamp bead structure according to any one of the above embodiments, and the second surfaces 320 of the plurality of lamp bead structures abut each other. The LED lamp panel can achieve at least one of the above technical effects.

[0060] The application also provides a processing and preparation method of a lamp bead structure, which comprises:

[0061] S10: providing a substrate 100 and arraying a plurality of light-emitting chip assemblies 200 on the bearing surface of the substrate 100;

[0062] S20: arranging a plurality of second dams 400 connected head to tail around the periphery of each light-emitting chip assembly 200;

[0063] S30: cutting the second dam 400 to form a first dam 300; wherein the refractive index of the first dam 300 is higher than that of the external environment; the outer surface of the side of the first dam 300 close to the light-emitting chip assembly 200 is a first surface 310, and the first surface 310 is a curved surface structure; and the side of the first dam 300 away from the light-emitting chip assembly 200 is a second surface 320, and the second surface 320 is a planar structure.

[0064] When the lamp bead structure is prepared by the processing preparation method of the lamp bead structure, a plurality of groups of light emitting chip assemblies 200 are first arranged on a substrate 100 in an array, and then a plurality of second dams 400 connected end to end are arranged around the periphery of each light emitting chip assembly 200 to form the structure shown in FIG. 1. At this time, the second dam 400 is cut to form the structure of the first dam 300 as shown in FIG. 3, so that the first surface 310 of the first dam 300 is a curved surface structure, and the second surface 320 of the first dam 300 is a planar structure. In this way, when the light emitting chip assembly 200 emits a light beam, the light beam can be reflected on the first surface 310, not only increasing the top light output of the light emitting chip assembly 200, but also making the display effect of the LED lamp panel better in a semi-outdoor environment. Moreover, part of the light beam can pass through the first dam 300 and be refracted at the second surface 320, thereby improving the side light output rate of the light emitting chip assembly 200.

[0065] MIP (Mini LED / Micro LED in Package) is a new type of packaging architecture based on Mini LED chips or Micro LED chips, wherein the maximum size of the light emitting surface of the Mini LED chip is 50 microns to 200 microns, and the maximum size of the light emitting surface of the Micro LED chip is less than or equal to 50 microns; MIP technology refers to chip-level packaging of Mini LED chips or Micro LED chips in the front process. Due to the extremely small size of the MIP lamp bead structure, the substrate 100 of the MIP lamp bead structure is generally composed of a large plate material (such as that shown in FIG. 1) formed by repeatedly splicing a plurality of lamp bead structure lines, and the large plate is fixed, dammed, molded, and then cut to obtain a small size MIP lamp bead structure (as shown in FIG. 3).

[0066] In some embodiments, step S20: a plurality of second dams 400 connected end to end are arranged around the periphery of each light emitting chip assembly 200 specifically includes:

[0067] The dam machine is used to arrange the second dam 400 at the middle line between the two adjacent groups of light emitting chip assemblies 200.

[0068] The dam machine is used to arrange the dam glue at the middle line between the two adjacent groups of light emitting chip assemblies 200, so that the dam glue forms the second dam 400 after curing, and the operation is simple and convenient.

[0069] Referring to FIG. 2, which is a cross-sectional view of A-A in FIG. 1. In some embodiments, the second dam 400 has a semi-elliptical or semi-circular cross-section perpendicular to the axial direction thereof. It should be noted that the plurality of second dams 400 around the periphery of the light emitting chip assembly 200 are divided into second dams 400 extending in the xx' direction in FIG. 1 and second dams 400 extending in the yy' direction.

[0070] When the axial direction of the second dam 400 is the xx' direction in FIG. 1, the cross section of the second dam 400 in the yy' direction perpendicular to the axial direction of the second dam 400 is a semicircle or a semi-ellipse. When the axial direction of the second dam 400 is the yy' direction in FIG. 1, the cross section of the second dam 400 in the xx' direction perpendicular to the axial direction of the second dam 400 is a semicircle or a semi-ellipse.

[0071] By setting the cross section of the second dam 400 in the direction perpendicular to the axial direction of the second dam 400 as a semicircle or a semi-ellipse, the manufacturing process is relatively simple when the second dam 400 is manufactured, and the structure of the dam glue before curing is relatively stable and is not prone to collapse. Meanwhile, the first dam 300 can be formed by cutting the second dam 400 at the center line, and the cutting process is relatively simple.

[0072] Please refer to FIG. 3. In some embodiments, the cross section of the first dam 300 in the direction perpendicular to the axial direction of the first dam 300 is a quarter of an ellipse or a quarter of a circle. By setting the cross section of the first dam 300 in the direction perpendicular to the axial direction of the first dam 300 as a quarter of an ellipse or a quarter of a circle, when the lamp bead structure provided by the present application needs to be spliced, the first surface 310 of two adjacent lamp bead structures can abut, so that the first dam 300 of the two adjacent lamp bead structures can be spliced into a complete semi-ellipse or a semicircle, facilitating the mutual splicing of multiple lamp bead structures. Meanwhile, the first surfaces 310 of the two first dams 300 after splicing can also be spliced together to form a complete curved surface structure, which can cause a large amount of scattering of the light beam emitted by the light emitting chip assembly 200 to the side, so that not only the side light of the light emitting chip assembly 200 is reserved, but also the light emitted to the front of the light emitting chip assembly 200 is increased, the uniformity of the side light is improved, and the side viewing angle display effect is improved.

[0073] It needs to be specially pointed out that the lamp bead of the MIP finished product is a regular cubic device, and except for the special chip arrangement, other outer components such as the substrate 100 ink and the epoxy molding surface need to present uniform and highly symmetrical characteristics to ensure that the left and right viewing angle light and display effects of different lamp beads are consistent. By setting the cross section of the first dam 300 in the direction perpendicular to the axial direction of the first dam 300 as a quarter of an ellipse or a quarter of a circle, when the lamp bead structure provided by the present application needs to be spliced, the first surface 310 of two adjacent lamp bead structures can abut, so that the first dam 300 of the two adjacent lamp bead structures can be spliced into a complete semi-ellipse or a semicircle, facilitating the mutual splicing of multiple lamp bead structures.

[0074] In some embodiments, epoxy resin glue is selected as the dam glue to prepare the second dam 400. The specific processing preparation process is: preparing the second dam 400 glue layer by epoxy resin glue, heat curing, preparing the mold pressing glue layer by epoxy resin glue, heat curing, and cutting the second dam 400. The specific processing process is:

[0075] (1) The position of the second dam 400 is set on the large plate material lamp bead cutting line of the substrate 100;

[0076] (2) The UV glue light is selected to prepare the second dam 400; wherein the UV glue selects a 360nm-370nm curing wavelength range. And the UV glue light needs to be added with a diffuser for stirring and uniform use, and then a UVLED curing machine is used for short-time high-intensity ultraviolet irradiation for 30s to complete rapid curing, which greatly improves the production efficiency;

[0077] (3) The epoxy resin glue is selected to prepare the mold pressing of the substrate 100; wherein the epoxy resin glue selected is a two-component glue, which makes the surface of the substrate 100 after die bonding flat and has high dustproof, waterproof and anti-collision ability. By adding a colorant such as an epoxy black paste with epoxy resin as the matrix and modified insulating carbon black as the colorant in the epoxy resin glue, the blackness of the mold pressing surface is improved to increase the contrast of the product.

[0078] (4) The wafer cutting is performed along the cutting line where the second dam 400 is located, and a 0.05mm-0.06mm blade is used for cutting.

[0079] In another embodiment, UV glue (ultraviolet light curing glue) is selected as the dam glue to prepare the second dam 400. The specific processing preparation process is: preparing the second dam 400 glue layer by UV glue, heat curing, preparing the mold pressing glue layer by epoxy resin glue, heat curing, and cutting the second dam 400. The specific processing process is:

[0080] (1) The position of the second dam 400 is set on the large plate material lamp bead cutting line of the substrate 100;

[0081] (2) The UV glue light is selected to prepare the second dam 400; wherein the UV glue selects a 360nm-370nm curing wavelength range. And the UV glue light needs to be added with a diffuser for stirring and uniform use, and then a UVLED curing machine is used for short-time high-intensity ultraviolet irradiation for 30s to complete rapid curing, which greatly improves the production efficiency;

[0082] (3) Select epoxy resin glue for molding the substrate 100; wherein the epoxy resin glue used is selected as two-component glue, and the surface of the substrate 100 after die bonding is flat and has high dustproof, waterproof and anti-collision ability through the molding process. By adding a colorant such as an epoxy black paste with epoxy resin as the matrix and modified insulating carbon black as the colorant to the epoxy resin glue, the blackness of the molded surface is further improved to increase the contrast of the product.

[0083] (4) The wafer is cut along the cutting line where the second dam 400 is located, and a 0.05-0.06 mm blade is used for cutting.

[0084] It should be understood that in the embodiments of the present application, at least a part of the steps in the preparation method can include multiple steps or stages, which do not necessarily be executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily sequential, but can be alternately executed with at least a part of other steps or steps or stages in other steps.

[0085] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but it should be considered that any combination of the technical features is within the scope of the present disclosure as long as the combination does not exist contradictions.

[0086] The above-described embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A lamp bead structure, the lamp bead structure comprising: substrate; A light-emitting chip assembly disposed on the substrate; The first dam is disposed on the substrate, and there are multiple first dams connected end to end and arranged around the outer periphery of the light-emitting chip assembly. The refractive index of the first dam is higher than that of the external environment. The outer surface of the first dam near the light-emitting chip assembly is the first surface, which is a curved structure. The side of the first dam away from the light-emitting chip assembly is the second surface, which is a planar structure.

2. The lamp bead structure according to claim 1, wherein, The first surface has a spherical structure.

3. The lamp bead structure according to claim 1, wherein, The first dam has a cross-section that is either a quarter ellipse or a quarter circle in the direction perpendicular to its own axis.

4. The lamp bead structure according to claim 1, wherein, The height h of the first dam satisfies the following condition: 0.12mm≤h≤0.16mm; and / or, The width d of the first dam satisfies the following condition: 0.05mm≤d≤0.15mm.

5. The lamp bead structure according to any one of claims 1-4, wherein, A light-diffusing agent is placed inside the first dam.

6. The lamp bead structure according to any one of claims 1-5, wherein, The substrate is a printed circuit board (PCB).

7. The lamp bead structure according to any one of claims 1-6, wherein, The light-emitting chip assembly includes a first light-emitting chip, a second light-emitting chip, and a third light-emitting chip, wherein the first light-emitting chip, the second light-emitting chip, and the third light-emitting chip are respectively a red light-emitting chip, a green light-emitting chip, and a blue light-emitting chip.

8. The lamp bead structure according to any one of claims 1-7, wherein, The first dam is made of dam adhesive, which is a curable adhesive.

9. The lamp bead structure according to claim 8, wherein, The curing methods of the damming adhesive include heat curing, room temperature curing, and light curing.

10. The lamp bead structure according to any one of claims 1-7, wherein, The first dam is made by using a damming machine to dam the midline of adjacent light-emitting chip components on the substrate.

11. The lamp bead structure according to claim 4, wherein, The height h of the first dam is any one of 0.12mm, 0.14mm and 0.16mm and / or the width h of the first dam is any one of 0.05mm, 0.10mm and 0.15mm.

12. The lamp bead structure according to claim 5, wherein, The light diffusing agent is silica particles.

13. The lamp bead structure according to any one of claims 1-12, wherein, The first dam also contained melanin.

14. An LED light panel, wherein, The LED light panel includes a plurality of lamp bead structures as described in any one of claims 1-13, and the second surfaces of the plurality of lamp bead structures abut against each other.

15. A method for fabricating a lamp bead structure, wherein, The processing and fabrication method of the lamp bead structure includes: A substrate is provided, and multiple light-emitting chip components are arranged in an array on the bearing surface of the substrate; Multiple second enclosures connected end-to-end are provided around the outer periphery of each of the light-emitting chip components; The second cofferdam is cut to form the first cofferdam; The refractive index of the first dam is higher than that of the external environment; the outer surface of the first dam near the light-emitting chip component is the first surface, which is a curved surface; and the side of the first dam away from the light-emitting chip component is the second surface, which is a planar surface.

16. The method for processing and preparing the lamp bead structure according to claim 15, wherein, The step of setting up multiple interconnected second dams around the outer periphery of each light-emitting chip assembly specifically includes: The second dam is set at the midline between two adjacent sets of the light-emitting chip components using a damming machine.

17. The method for processing and preparing the lamp bead structure according to claim 15, wherein, The second dam has a semi-elliptical or semi-circular cross-section in the direction perpendicular to its own axis.

18. The method for processing and preparing the lamp bead structure according to any one of claims 15-17, wherein, The first dam has a cross-section that is either a quarter ellipse or a quarter circle in the direction perpendicular to its own axis.

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