Optical module

Abstract

An optical module (200), comprising a laser assembly (460), wherein the laser assembly (460) comprises a substrate (420) and a laser chip (900), and the laser chip (900) is arranged on a surface of the substrate (420). The substrate (420) is electrically connected to a circuit board (300), and the laser chip (900) is electrically connected to the substrate (420). A light-emitting area (910) is formed at one end of the laser chip (900), and the light-emitting area (910) emits multiple beams of light that do not carry information. A plurality of modulation areas (940, 950, 960, 970) are formed on one side of the light-emitting area (910), and one modulation area (940, 950, 960, 970) among the plurality of modulation areas (940, 950, 960, 970) performs signal modulation on one beam of light that does not carry information to generate an optical signal. A plurality of optical signals can be generated by modulation by the plurality of modulation areas (940, 950, 960, 970). A light-emitting port area (900d) is formed on one side of the plurality of modulation areas (940, 950, 960, 970), the light-emitting port area (900d) is located on one side of the plurality of modulation areas (940, 950, 960, 970), the light-emitting port area (900d) is arranged opposite to the light-emitting area (910), and the plurality of modulation areas (940, 950, 960, 970) are located between the light-emitting area (910) and the light-emitting port area (900d). The plurality of optical signals generated by modulation by the plurality of modulation areas (940, 950, 960, 970) are outputted along the light-emitting port area (900d). In this way, the laser chip (900) can output a plurality of optical signals, thereby achieving arrayed light emission, improving the integration of the chip, and increasing the transmission rate of the optical module (200).

Description

Optical module

[0001] This application claims priority to the application filed on February 21, 2025 with the China Patent Office, application number 202510199374.9; the application filed on February 21, 2025 with the China Patent Office, application number 202510199398.4; the application filed on February 21, 2025 with the China Patent Office, application number 202510199144.2; the application filed on February 21, 2025 with the China Patent Office, application number 202520289683.0; the application filed on May 29, 2024 with the China Patent Office, application number 202410683508.X; the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to the field of optical fiber communication technology, and in particular to an optical module. BACKGROUND

[0003] With the development of new business and application modes such as cloud computing, mobile Internet, video, etc., the progress of optical communication technology becomes increasingly important. In optical communication technology, optical modules, as one of the key devices in optical communication equipment, can realize optical-electrical signal conversion; in the development process of optical communication technology, the data transmission rate of optical modules is required to be continuously improved. SUMMARY

[0004] The optical module provided by the embodiments of the present disclosure comprises:

[0005] a circuit board;

[0006] a laser assembly comprising:

[0007] a substrate electrically connected to the circuit board;

[0008] a laser chip disposed on the surface of the substrate and electrically connected to the substrate, the laser chip comprising:

[0009] a second substrate;

[0010] a light emitting region located at one end of the laser chip and disposed on the surface of the second substrate, the light emitting region emitting a plurality of non-information-carrying lights; comprising:

[0011] a first N-InP layer;

[0012] a plurality of modulation regions located on one side of the light emitting region and disposed on the surface of the second substrate, one of the plurality of modulation regions modulating a non-information-carrying light to generate an optical signal; comprising:

[0013] a second N-InP layer;

[0014] a second P-InP layer;

[0015] The first electrode part is arranged on the surface of the second P-InP layer.

[0016] The second electrode part is arranged on the surface of the second N-InP layer.

[0017] The first radio frequency electrode is arranged on one side of the first electrode part, and the first radio frequency electrode is electrically connected with the first electrode part and is insulatedly connected with the second substrate.

[0018] The second radio frequency electrode is arranged on both sides of the second P-InP layer with the second electrode part, and the second radio frequency electrode is electrically connected with the second electrode part and is insulatedly connected with the second substrate; the second radio frequency electrode and the first radio frequency electrode form a differential driving electrode.

[0019] The first direct current electrode is arranged on the other side of the first electrode part, and the first direct current electrode is electrically connected with the first electrode part and is insulatedly connected with the second substrate.

[0020] The second direct current electrode is arranged on the same side of the second P-InP layer with the second electrode part, and the second direct current electrode is electrically connected with the second electrode part and is insulatedly connected with the second substrate; a switching electrode part is arranged on the side of the second direct current electrode.

[0021] The first electric connection bridge has one end electrically connected with the first radio frequency electrode and the other end electrically connected with the first direct current electrode; the first electric connection bridge is electrically connected with the first electrode part, so that the first radio frequency electrode and the first direct current electrode are respectively electrically connected with the first electrode part.

[0022] The second electric connection bridge has one end electrically connected with the second electrode part and the other end electrically connected with the switching electrode part, and the switching electrode part is electrically connected with the second direct current electrode, so that the second direct current electrode is electrically connected with the second electrode part.

[0023] The third electric connection bridge has one end electrically connected with the switching electrode part and the other end electrically connected with the second radio frequency electrode, so that the second radio frequency electrode is electrically connected with the second electrode part.

[0024] The light output port area is arranged on one side of the plurality of modulation areas, and the light output port area is arranged opposite to the light emitting area; the plurality of modulation areas are arranged between the light emitting area and the light output port area, and the plurality of modulation areas modulate the generated multiple light signals to output along the light output port area. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art without creative labor.

[0026] Figure 1 is a partial architecture diagram of an optical communication system according to some embodiments of the present disclosure;

[0027] Figure 2 is a partial structure diagram of a host computer according to some embodiments of the present disclosure;

[0028] Figure 3 is a structure diagram of an optical module according to some embodiments of the present disclosure;

[0029] Figure 4 is an exploded view of an optical module according to some embodiments of the present disclosure;

[0030] Figure 5a is an internal structure diagram of an optical module according to some embodiments of the present disclosure;

[0031] Figure 5b is an internal exploded view of an optical module according to some embodiments of the present disclosure;

[0032] Figure 6a is a structure diagram of an optical transmitting component according to some embodiments of the present disclosure;

[0033] Figure 6b is a structure diagram of an optical transmitting component according to some embodiments of the present disclosure;

[0034] Figure 7a is an optical path diagram of an optical receiving component according to some embodiments of the present disclosure;

[0035] Figure 7b is a structure diagram of a light folding component according to some embodiments of the present disclosure;

[0036] Figure 7c is an exploded view of a light folding component according to some embodiments of the present disclosure;

[0037] Figure 8a is an assembly exploded view of a circuit board according to some embodiments of the present disclosure;

[0038] Figure 8b is an assembly cross-sectional view of a circuit board according to some embodiments of the present disclosure;

[0039] Figure 9a is a partial view of an assembly of a circuit board according to some embodiments of the present disclosure;

[0040] Figure 9b is a partial structure diagram of an optical transmitting component according to some embodiments of the present disclosure;

[0041] Figure 10a is an internal structure diagram of a laser chip according to some embodiments of the present disclosure;

[0042] Figure 10b is an optical path diagram of a laser chip according to some embodiments of the present disclosure;

[0043] Figure 11a is a structure diagram of a first coupler according to some embodiments of the present disclosure;

[0044] FIG. 11b is a cross-sectional view of a first coupler, according to some embodiments of the present disclosure;

[0045] FIG. 11c is a plan view of a waveguide layer, according to some embodiments of the present disclosure;

[0046] FIG. 11d is another plan view of a waveguide layer, according to some embodiments of the present disclosure;

[0047] FIG. 12 is a cross-sectional view of a light emitting region, according to some embodiments of the present disclosure;

[0048] FIG. 13 is a perspective view of a light emitting region, according to some embodiments of the present disclosure;

[0049] FIG. 14 is a partial cross-sectional view of a laser chip, according to some embodiments of the present disclosure;

[0050] FIG. 15 is a cross-sectional view of a first electro-absorption modulating region, according to some embodiments of the present disclosure;

[0051] FIG. 16 is another cross-sectional view of a first electro-absorption modulating region, according to some embodiments of the present disclosure;

[0052] FIG. 17 is a cross-sectional view of a first electro-absorption modulating region, according to some embodiments of the present disclosure;

[0053] FIG. 18 is another cross-sectional view of a first electro-absorption modulating region, according to some embodiments of the present disclosure;

[0054] FIG. 19 is a structure of a laser assembly, according to some embodiments of the present disclosure;

[0055] FIG. 20 is an exploded view of a laser assembly, according to some embodiments of the present disclosure;

[0056] FIG. 21 is a surface structure view of a laser assembly, according to some embodiments of the present disclosure;

[0057] FIG. 22 is a surface layout structure view of a laser assembly, according to some embodiments of the present disclosure;

[0058] FIG. 23 is another surface structure view of a laser assembly, according to some embodiments of the present disclosure;

[0059] FIG. 24 is a schematic view of a capacitor arrangement, according to some embodiments of the present disclosure;

[0060] FIG. 25 is a schematic view of a laser chip circuit, according to some embodiments of the present disclosure;

[0061] FIG. 26 is a schematic view of a structure of a laser chip, according to some embodiments of the present disclosure;

[0062] Figure 27 is a diagram of a laser chip structure according to some embodiments of the present disclosure;

[0063] Figure 28 is a second diagram of a laser chip structure provided according to some embodiments of the present disclosure;

[0064] Figure 29 is a diagram of a laser chip structure according to some embodiments of the present disclosure;

[0065] Figure 30 is a schematic flowchart of a laser chip fabrication method according to some embodiments of the present disclosure;

[0066] Figure 31 is a schematic diagram of a first electrical connection bridge fabrication process according to some embodiments of the present disclosure;

[0067] Figure 32 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure;

[0068] Figure 33 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure;

[0069] Figure 34 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure;

[0070] Figure 35 is a schematic diagram of a laser assembly provided according to some embodiments of the present disclosure;

[0071] Figure 36 is a schematic diagram of the structure of a laser chip according to some embodiments of the present disclosure;

[0072] Figure 37 is an exploded view of a laser chip provided according to some embodiments of the present disclosure;

[0073] Figure 38 is a partially enlarged view of a laser chip provided according to some embodiments of the present disclosure;

[0074] Figure 39 is a schematic diagram of the modulation pad in Figure 38;

[0075] Figure 40 is a partially enlarged view of a laser chip provided according to some embodiments of the present disclosure;

[0076] Figure 41 is a schematic diagram of the structure of another laser chip provided according to some embodiments of the present disclosure;

[0077] Figure 42 is a perspective view of a substrate provided according to some embodiments of the present disclosure;

[0078] Figure 43 is a top view of a substrate provided according to some embodiments of the present disclosure;

[0079] Figure 44 is a magnified view of part A in Figure 43;

[0080] Figure 45 is a schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments of the present disclosure;

[0081] Figure 46 is a schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments of the present disclosure;

[0082] Figure 47 is a schematic diagram of another laser chip provided according to some embodiments of the present disclosure;

[0083] Figure 48 is a front view of another laser chip provided according to some embodiments of the present disclosure;

[0084] Figure 49 is a schematic diagram of another laser chip without pads provided according to some embodiments of the present disclosure;

[0085] Figure 50 is a cross-sectional view of another laser chip provided according to some embodiments of the present disclosure;

[0086] Figure 51 is a cross-sectional view of another laser chip provided according to some embodiments of the present disclosure;

[0087] Figure 52 is a cross-sectional view three of another laser chip provided according to some embodiments of the present disclosure;

[0088] Figure 53 is a cross-sectional view four of another laser chip provided according to some embodiments of the present disclosure;

[0089] Figure 54 is a partial schematic diagram of another laser chip provided according to some embodiments of the present disclosure;

[0090] Figure 55 is a partial schematic diagram of another laser chip provided according to some embodiments of the present disclosure. Detailed Implementation

[0091] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0092] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0093] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0094] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. Similarly, the term "coupled" may be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the terms "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0095] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0096] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0097] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0098] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0099] In optical communication technology, to establish information transmission between information processing devices, information is loaded onto light, and the speed of light propagation is used to transmit the information. This light carrying information is called an optical signal. When optical signals are transmitted in optical information transmission equipment, optical power loss can be reduced, enabling long-distance transmission of optical signals. At the same time, the cost of optical information transmission equipment such as optical fibers is lower than that of electrical information transmission equipment such as copper wires. Therefore, optical communication technology can achieve high-speed, long-distance, and low-cost information transmission.

[0100] Information processing equipment typically includes optical network units (ONUs), gateways, routers, switches, mobile phones, computers, servers, tablets, televisions, etc., while optical information transmission equipment typically includes optical fibers and optical waveguides. Information processing equipment can only recognize and process electrical signals, while optical communication technology uses optical signals for transmission, requiring optical modules to convert between optical and electrical signals.

[0101] An optical module enables the conversion between optical signals and electrical signals between information processing equipment and optical information transmission equipment. In some embodiments, at least one of the optical signal input or output terminals of the optical module is connected to an optical fiber, and at least one of the electrical signal input or output terminals of the optical module is connected to an optical network terminal. A first optical signal from the optical fiber is transmitted to the optical module, which converts the first optical signal into a first electrical signal and transmits the first electrical signal to the optical network terminal. A second electrical signal from the optical network terminal is transmitted to the optical module, which converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber.

[0102] Since multiple information processing devices can transmit information via electrical signals, at least one of these devices needs to be directly connected to the optical module, rather than all of them. Here, the information processing device directly connected to the optical module is also referred to as the host computer of the optical module. Furthermore, the optical signal input or output terminal of the optical module is called the optical port, and the electrical signal input or output terminal is called the electrical port.

[0103] Figure 1 is a partial structural diagram of an optical communication system provided according to some embodiments of the present disclosure. As shown in Figure 1, the optical communication system mainly includes a remote information processing device 1000, a local information processing device 2000, a host computer 100 for optical modules, an optical module 200, an optical fiber 101, and a network cable 103, wherein the optical fiber 101 is an optical information transmission device, and the network cable 103 is an electrical information transmission device.

[0104] In some embodiments, one end of the optical fiber 101 extends toward the remote information processing device 1000, and the other end of the optical fiber 101 is connected to the optical module 200 through the optical port of the optical module 200. The optical signal can undergo total internal reflection in the optical fiber 101, and the propagation of the optical signal in the direction of total internal reflection can almost maintain the original optical power. The optical signal undergoes multiple total internal reflections in the optical fiber 101 to transmit the optical signal from the remote information processing device 1000 to the optical module 200, or to transmit the optical signal from the optical module 200 to the remote information processing device 1000, thereby realizing long-distance information transmission based on low power loss.

[0105] The optical communication system includes one or more optical fibers 101. In some embodiments, the optical fiber 101 is detachably connected to the optical module 200; in some embodiments, the optical fiber 101 is non-detachably connected to the optical module 200.

[0106] The host computer 100 is configured to provide data signals to the optical module 200, or receive data signals from the optical module 200, or monitor or control the working status of the optical module 200.

[0107] The host computer 100 includes a housing for accommodating the optical module 200, and an optical module interface 102 disposed on the housing. The optical module 200 is inserted into the housing through the optical module interface 102 to establish a unidirectional or bidirectional electrical signal connection between the host computer 100 and the optical module 200.

[0108] The host computer 100 also includes an external power interface that can connect to an electrical signal network. In some embodiments, the external power interface includes a Universal Serial Bus (USB) interface or a network cable interface 104. The network cable interface 104 is configured to connect a network cable 103 to establish a unidirectional or bidirectional electrical signal connection between the host computer 100 and the network cable 103.

[0109] One end of the network cable 103 is connected to the local information processing device 2000, and the other end is connected to the host computer 100, so as to establish an electrical signal connection between the local information processing device 2000 and the host computer 100 through the network cable 103. In some embodiments, a third electrical signal emitted by the local information processing device 2000 is transmitted to the host computer 100 through the network cable 103. The host computer 100 generates a second electrical signal based on the third electrical signal. The second electrical signal from the host computer 100 is transmitted to the optical module 200. The optical module 200 converts the second electrical signal into a second optical signal and transmits the second optical signal to the optical fiber 101. The second optical signal is transmitted in the optical fiber 101 to the remote information processing device 1000.

[0110] In some embodiments, a first optical signal from a remote information processing device 1000 is transmitted through an optical fiber 101, and the first optical signal from the optical fiber 101 is transmitted to an optical module 200. The optical module 200 converts the first optical signal into a first electrical signal, and transmits the first electrical signal to a host computer 100. The host computer 100 generates a fourth electrical signal based on the first electrical signal and transmits the fourth electrical signal to a local information processing device 2000.

[0111] In some embodiments, the optical module is a tool for converting optical signals to electrical signals. During the conversion process, the information does not change, but the encoding or decoding method of the information changes.

[0112] In addition to optical network terminals, the host computer 100 also includes optical line terminals (OLTs), optical network equipment (ONTs), or data center servers.

[0113] Figure 2 is a partial structural diagram of a host computer according to some embodiments of the present disclosure. To clearly show the connection relationship between the optical module 200 and the host computer 100, Figure 2 only shows the structure of the host computer 100 related to the optical module 200. As shown in Figure 2, in some embodiments, the host computer 100 further includes a PCB circuit board 105 disposed within a receiving cavity, and a cage 106 disposed on the surface of the PCB circuit board 105; the optical module 200 is inserted into the cage 106 and fixed by the cage 106.

[0114] In some embodiments, a heat sink 107 is provided on the cage 106 to dissipate heat for the optical module; in some embodiments, the heat sink 107 has protruding structures such as fins to increase the heat dissipation area.

[0115] In some embodiments, an electrical connector is provided inside the cage 106, which is configured to connect to the electrical port of the optical module 200.

[0116] In some embodiments, the optical module 200 is inserted into the cage 106 of the host computer 100, and the cage 106 fixes the optical module 200. The heat generated by the optical module 200 is conducted to the cage 106 and then diffused through the heat sink 107.

[0117] In some embodiments, the optical module 200 is inserted into the cage 106 of the host computer 100, and the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, thereby establishing an electrical signal connection between the optical module 200 and the host computer 100.

[0118] In some embodiments, the optical port of the optical module 200 is connected to the optical fiber 101, thereby enabling the optical module 200 to establish an optical signal connection with the optical fiber 101.

[0119] Figure 3 is a structural diagram of an optical module according to some embodiments of the present disclosure, and Figure 4 is an exploded view of an optical module according to some embodiments of the present disclosure. As shown in Figures 3 and 4, in some embodiments, the optical module 200 includes a shell, which includes an upper shell 201 and a lower shell 202. The upper shell 201 covers the lower shell 202, forming two openings 204 and 205, one of which is an electrical port and the other is an optical port. In some embodiments, the shell forms an opening that serves as both an electrical port and an optical port.

[0120] In some embodiments, the upper housing 201 and the lower housing 202 are made of metal materials, which facilitates electromagnetic shielding and heat dissipation.

[0121] The assembly method of combining the upper housing 201 and the lower housing 202 facilitates the installation of the circuit board 300, the light emitting component 400, the light receiving component 500, etc. into the housing. The upper housing 201 and the lower housing 202 can encapsulate and protect the above-mentioned devices.

[0122] The direction of the line connecting the two openings 204 and 205 can be consistent with or inconsistent with the length direction of the optical module 200. For example, opening 204 is located at the end of the optical module 200 (right end in Figure 3), and opening 205 is also located at the end of the optical module 200 (left end in Figure 3). Alternatively, opening 204 is located at the end of the optical module 200, while opening 205 is located on the side of the optical module 200.

[0123] In some embodiments, the lower housing 202 includes a base plate 2021 and two lower side plates 2022 located on both sides of the base plate 2021 and perpendicular to the base plate 2021; the upper housing 201 includes a cover plate 2011, which covers the two lower side plates 2022 of the lower housing 202 to form the aforementioned housing.

[0124] In some embodiments, the lower housing 202 includes a base plate 2021 and two lower side plates 2022 located on both sides of the base plate 2021 and perpendicular to the base plate 2021; the upper housing 201 includes a cover plate 2011 and two upper side plates located on both sides of the cover plate 2011 and perpendicular to the cover plate 2011. The two upper side plates and the two lower side plates 2022 are combined to realize that the upper housing 201 covers the lower housing 202.

[0125] As shown in Figures 3 and 4, in some embodiments, the optical module includes a circuit board 300 disposed within a housing. The circuit board 300 includes circuit traces, electronic components, and chips. The electronic components and chips are connected according to the circuit design through the circuit traces to achieve functions such as power supply, electrical signal transmission, and grounding. Electronic components may include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (MOSFETs). Chips may include microcontroller units (MCUs), laser driver chips, transimpedance amplifiers (TIAs), limiting amplifiers (LAs), clock and data recovery chips (CDRs), power management chips, and digital signal processing (DSP) chips.

[0126] In some embodiments, the circuit board includes a rigid circuit board, which, due to its relatively rigid material, can also serve a load-bearing function, such as being able to stably support the aforementioned electronic components and chips; the rigid circuit board can also be inserted into an electrical connector in the cage 106 of the host computer 100.

[0127] In some embodiments, the circuit board further includes a flexible circuit board, which can be used independently or in conjunction with a rigid circuit board.

[0128] In some embodiments, the circuit board further includes gold fingers formed on its end surface, the gold fingers consisting of a plurality of independent pins.

[0129] In some implementations, the gold fingers 301 are disposed on one side of the surface of the circuit board 300 (e.g., the upper surface shown in Figure 4); in some implementations, the gold fingers 301 are disposed on the upper and lower surfaces of the circuit board 300 to provide a greater number of pins, thereby adapting to applications with a large number of pins required.

[0130] In some implementations, the gold fingers of the circuit board extend from the opening 204 and are inserted into the electrical connector of the host computer 100; the circuit board is inserted into the cage 106, and the gold fingers 301 are connected to the electrical connector inside the cage 106. The gold fingers 301 are configured to establish an electrical connection with the host computer, enabling electrical connection functions such as power supply, grounding, two-wire synchronous serial (Inter-Integrated Circuit, I2C) signal transmission, and data signal transmission.

[0131] In some embodiments, the optical module 200 further includes an unlocking component 600 located outside its housing. The unlocking component 600 is configured to establish a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.

[0132] For example, the unlocking component 600 is located on the outside of the two lower side plates 2022 of the lower housing 202, and includes a locking component that matches the cage 106 of the host computer 100. When the optical module 200 is inserted into the cage 106, the locking component of the unlocking component 600 fixes the optical module 200 in the cage 106; when the unlocking component 600 is pulled, the locking component of the unlocking component 600 moves accordingly, thereby changing the connection relationship between the locking component and the host computer, so as to release the fixation between the optical module 200 and the host computer, thereby allowing the optical module 200 to be pulled out of the cage 106.

[0133] In some embodiments, the optical module includes a light emitting component 400. In some embodiments, the optical module includes a light receiving component 500.

[0134] In some embodiments, at least one of the light emitting component 400 or the light receiving component 500 is located on the side of the circuit board 300 away from the gold finger 301.

[0135] In some embodiments, the light emitting component 400 and the light receiving component 500 are physically separated from the circuit board 300, and then electrically connected to the circuit board 300 through corresponding flexible circuit boards or electrical connectors.

[0136] In some embodiments, at least one of the light emitting component or the light receiving component may be directly disposed on the circuit board 300. For example, at least one of the light emitting component or the light receiving component may be disposed on the surface of the circuit board 300 or the side of the circuit board 300.

[0137] Figure 5a is an internal structural diagram of an optical module according to some embodiments of the present disclosure, and Figure 5b is an exploded internal view of an optical module according to some embodiments of the present disclosure. As shown in Figures 5a and 5b, in some embodiments, a light receiving component 500 and a light emitting component 400 are provided on the surface of the circuit board 300.

[0138] In some embodiments, the light emitting component 400 is configured to receive electrical signals and convert the electrical signals into optical signals.

[0139] In some embodiments, the light emitting component 400 may include a housing 440 and a cover plate 450. The housing 440 and the cover plate 450 are closed together to form a cavity. The cavity can be used to house and protect devices such as laser components. The housing 440 includes a base plate and a side plate, the side plate being connected to the top edge of the base plate, the base plate and the side plate forming a housing with a top opening. The top of the side plate supports and connects to the emitting cover plate 450.

[0140] In some embodiments, the light emitting component 400 may include a laser assembly 460. The laser assembly 460 is disposed inside a housing 440. The housing 440 has good thermal conductivity, which is beneficial for heat dissipation of the laser assembly 460. The laser assembly 460 includes a substrate 420 and a laser chip 900. The laser chip 900 is electrically connected to the substrate 420, and the substrate 420 is electrically connected to the circuit board 300, thereby establishing an electrical connection between the laser chip 900 and the circuit board 300, supplying power to the laser chip 900 or inputting high-frequency signals. The laser assembly 460 can emit multi-channel optical signals to achieve high-speed transmission.

[0141] In some embodiments, a circuit pattern is formed on the surface of the substrate 420, including signal traces, pads, etc. The laser chip 900 is electrically connected to the corresponding circuit pattern on the surface of the substrate 420 to supply power or input high-frequency signals to the laser chip 900 through the substrate 420.

[0142] In some embodiments, the laser chip 900 is located on the surface of the substrate 420, or the laser chip 900 is embedded in the substrate 420.

[0143] In some embodiments, the optical emitting component 400 may include an optical fiber array 430. The optical fiber array 430 is located inside the housing 440. The optical fiber array 430 includes a fixing member 431a and an optical fiber bundle 432a. The optical fiber bundle 432a is fixed by the fixing member 431a and includes multiple optical fibers, which can correspondingly transmit the optical signals emitted by the laser chip 900, realize multi-channel transmission, and improve the overall transmission rate. For example, if the laser chip 900 emits four optical signals, then the optical fiber bundle 432a includes four optical fibers to correspondingly transmit the four optical signals.

[0144] In some embodiments, the laser chip 900 is coupled to the end face of the fiber array 430, and the multiple optical signals emitted by the laser chip 900 are directly coupled into the laser chip 900.

[0145] In some embodiments, the light receiving component 500 is located on one side of the light emitting component 400. The light receiving component 500 is configured to receive optical signals and convert the optical signals into electrical signals. In some embodiments, the light receiving component 500 may include a refractive element 510. In some embodiments, the light receiving component 500 may include a light receiving chip 520. In some embodiments, the light receiving component 500 may include a TIA 530.

[0146] In some embodiments, the refracting element 510 includes an optical fiber 511 extending toward the optical receiver chip 520, with the end of the optical fiber 511 exposed above the optical receiver chip 520. A reflective end face 512 is formed at the end of the optical fiber 511, and this reflective end face 512 is exposed above the optical receiver chip 520. The reflective end face 512 is used to reflect and change the transmission direction of the optical signal transmitted through the optical fiber 511, thereby reflecting the optical signal transmitted through the optical fiber 511 to the optical receiver chip 520, thus achieving a reversal of the optical path.

[0147] In some embodiments, the TIA530 is located on the surface of the circuit board 300 and is situated to one side of the optical receiver chip 520. The optical receiver chip 520 converts the received optical signal into a photocurrent signal, and the TIA530 converts the photocurrent signal into a photovoltage signal and amplifies the photovoltage signal.

[0148] Figure 6a is a schematic diagram of a light emitting component according to some embodiments of the present disclosure, and Figure 6b is a schematic diagram of a light emitting component according to some embodiments of the present disclosure. As shown in Figures 6a and 6b, in some embodiments, the light emitting component 400 includes a housing 440 and a cover plate 450, which are connected to form an emitting cavity. The emitting cavity can be used to accommodate laser components, lenses, and other devices.

[0149] In some embodiments, housing 440 includes a base plate and a side plate, the side plate being connected to the top edge of the base plate, the base plate and the side plate forming a housing with a top opening. The top of the side plate supports and connects to a launch cover 450.

[0150] In some embodiments, as shown in FIG6a, a first notch 441 is formed on the side plate at the left end of the housing 440, and the first notch 441 communicates with the inner cavity of the housing 440. The fiber optic array 430 passes through the first notch 441, and multiple fibers of the fiber optic array 430 extend from the inside of the housing 440 along the first notch 441.

[0151] In some embodiments, as shown in FIG6b, a second notch 442 is formed at the right end of the housing 440, the bottom of the second notch 442 extends to the bottom plate of the housing 440, and the two sides of the second notch 442 extend to the side plates on both sides of the housing 440.

[0152] In some embodiments, a first boss 443 and a second boss 444 are formed on the top of the housing 440. The first boss 443 and the second boss 444 are formed by the outer wall of the side plate of the housing 440 protruding outward from the housing 440. The right end of the first boss 443 and the right end of the second boss 444 extend beyond the right side of the second notch 442.

[0153] Figure 7a is a schematic diagram of the optical path of an optical receiving component according to some embodiments of the present disclosure, Figure 7b is a structural diagram of a refractive element according to some embodiments of the present disclosure, and Figure 7c is an exploded view of a refractive element according to some embodiments of the present disclosure. As shown in Figures 7a-7c, in some embodiments, the reflective end face 512 reflects the optical signal transmitted by the optical fiber 511 to change the transmission direction of the optical signal within the optical fiber 511, thereby reflecting the optical signal transmitted by the optical fiber 511 to the optical receiving chip 520 to achieve optical signal reception. In some embodiments, the refractive element 510 may include an optical fiber 511. The light-emitting end face of the optical fiber 511 has a reflective end face 512. In some embodiments, the refractive element 510 may include a first optical fiber support portion 513 and a second optical fiber support portion 514. The first optical fiber support portion 513 and the second optical fiber support portion 514 are arranged vertically opposite each other, and multiple optical fibers 511 are sandwiched between them. Multiple optical fibers 511 form an optical fiber array. A V-groove 517 is formed on the bottom surface of the first optical fiber support portion 513 to embed the optical fiber 511.

[0154] In some embodiments, the refracting element 510 may include an optical fiber fixing portion 515. The optical fiber fixing portion 515 is located at the tail of the second optical fiber support portion 514 to fix the optical fiber 511. The optical fiber fixing portion 515 protects and cushions the optical fiber 511, thereby preventing fiber breakage. Exemplarily, the optical fiber fixing portion 515 is made of soft rubber, which protects and cushions the optical fiber 511.

[0155] In some embodiments, the length of the first optical fiber support portion 513 is longer than that of the second optical fiber support portion 514, and there is a space between the end of the second optical fiber support portion 514 and the end of the first optical fiber support portion 513, which is reserved for coating space of the optical fiber fixing portion 515.

[0156] In some embodiments, the reflective end face 512 is an inclined surface, and the received optical signal transmitted by the optical fiber 511 undergoes total internal reflection at the reflective end face 512. For example, the inclination angle of the reflective end face 512 is 46°-50°, such as 46°, 48°, 50°, etc.

[0157] In some embodiments, the optical fiber 511 passes through one end of the first optical fiber support 513 and extends to the outside of the other end of the first optical fiber support 513, such that the reflective end face 512 is located outside the other end of the first optical fiber support 513. One end of the optical fiber fixing part 515 is connected to one end of the second optical fiber support 514, and the other end of the optical fiber fixing part 515 is fixedly connected to the end of the optical fiber 511 to support the end of the optical fiber 511.

[0158] In some embodiments, a protective surface 516 is formed on the end face of the first optical fiber support portion 513. The protective surface 516 surrounds the side of the reflective end face 512 to protect the reflective end face 512. For example, the protective surface 516 is an inclined surface with an inclination angle of 46°-50°, such as 46°, 48°, 50°, etc.

[0159] In some embodiments, the reflective end face 512 and the protective end face 516 are formed by grinding and polishing. The end face of the optical fiber 511 is ground to a certain tilt angle to form the reflective end face 512. The optical fiber 511 is cylindrical, and the cross-section of the reflective end face 512 after grinding is elliptical, so the bottom of the optical fiber 511 is exposed relative to the first optical fiber support portion 513.

[0160] In some embodiments, a certain gap is left between the fiber fixing part 515 and the surface of the circuit board 300 to prevent the fiber fixing part 515 from sticking to the optical adhesive on the surface of the circuit board 300 used to fix the second fiber support part 514, and to maintain the binding force of the fiber fixing part 515 on the fiber 511.

[0161] In some embodiments, the light receiver chip 520 is located on the surface of the circuit board 300. When the model of the light receiver chip 520 is fixed, its thickness is fixed, and therefore the distance from its photosensitive surface to the surface of the circuit board 300 is fixed.

[0162] In some embodiments, the preset distance between the reflective end face 512 and the light receiving chip 520 is small to ensure that the light signal reflected from the reflective end face 512 can be transmitted to the photosensitive surface of the light receiving chip 520 and then received by the light receiving chip 520. The thickness of the second optical fiber support portion 514 is small to ensure that the distance between the reflective end face 512 and the light receiving chip 520 meets the preset distance. For example, the thickness of the second optical fiber support portion 514 is smaller than that of the first optical fiber support portion 513 to ensure that the distance between the reflective end face 512 and the light receiving chip 520 meets the preset distance.

[0163] In some embodiments, there is a certain distance between the end of the second optical fiber support 514 and the reflective end face 512, and the length of the second optical fiber support 514 does not extend below the reflective end face 512, leaving space for the optical receiving chip 520 to be installed, so as to ensure that the distance from the reflective end face 512 to the optical receiving chip 520 meets the preset distance.

[0164] Figure 8a is an exploded view of a circuit board assembly according to some embodiments of the present disclosure, and Figure 8b is a cross-sectional view of a circuit board assembly according to some embodiments of the present disclosure. As shown in Figures 8a and 8b, in some embodiments, a light receiving component 500 and a light emitting component 400 are provided on the surface of the circuit board 300. In some embodiments, the surface of the circuit board 300 has a through hole 302. A housing 440 is embedded in the through hole 302, thereby fixing the housing 440 to the circuit board 300.

[0165] In some embodiments, the fiber bundle 432a extends out of the housing 440 along the first notch 441 of the housing 440.

[0166] In some embodiments, the sidewalls on both sides of the bottom end of the housing 440 are recessed inward to support the circuit board 300 on both sides, thereby embedding the housing 440 in the through hole 302.

[0167] Figure 9a is a partial view of a circuit board assembly according to some embodiments of the present disclosure, and Figure 9b is a partial structural view of a light emitting component according to some embodiments of the present disclosure. As shown in Figures 9a and 9b, in some embodiments, a light receiving component 500 and a light emitting component 400 are provided on the surface of the circuit board 300. In some embodiments, the surface of the circuit board 300 has a through hole 302. A housing 440 is embedded in the through hole 302, thereby fixing the housing 440 to the circuit board 300.

[0168] In some embodiments, the laser chip 900 can be a single-channel output laser chip or an array output laser chip. The following embodiments use an array output laser chip 900 as an example for illustrative purposes. In some embodiments, the laser chip 900 emits multi-channel optical signals. The laser chip 900 has multiple output ports, which are optically connected to the input ports of the fiber array 430, thereby transmitting multiple optical signals to the corresponding optical fibers within the fiber bundle 432a. In some embodiments, the laser chip 900 is coupled to the end face of the fiber array 430. The laser chip 900 and the fiber array 430 are fixedly connected by refractive index matching optical adhesive.

[0169] In some embodiments, a circuit pattern is formed on the surface of the substrate 420. The substrate 420 is electrically connected to the circuit board 300.

[0170] In some embodiments, the laser chip 900 may be an EML laser chip. An EML laser chip includes a distributed feedback laser (DFB) and an electro absorption modulator (EAM). Correspondingly, the laser chip 900 includes a light-emitting region and an electro absorption modulation region.

[0171] In some embodiments, the light-emitting region emits light from the edge, and the emitted light does not carry a signal. An electro-absorption modulation region is disposed in the light-emitting path of the light-emitting region to modulate the signal-free light emitted by the light-emitting region, thereby generating an optical signal.

[0172] In some embodiments, a bias current circuit is provided on the surface of the circuit board 300. The output terminal of the bias current circuit is electrically connected to the surface of the substrate 420, and the surface of the substrate 420 is electrically connected to the light-emitting area, thereby establishing an electrical connection between the bias current circuit and the light-emitting area to apply a forward bias current to the light-emitting area. When the forward bias current is greater than a threshold, the light-emitting area emits light.

[0173] In some embodiments, a bias voltage circuit is provided on the surface of the circuit board 300. The output terminal of the bias voltage circuit is electrically connected to the substrate 420, and the surface of the substrate 420 is electrically connected to the electroabsorption modulation region, thereby establishing an electrical connection between the bias voltage circuit and the electroabsorption modulation region to apply a reverse bias voltage to the electroabsorption modulation region.

[0174] In some embodiments, a driving circuit is provided on the surface of the circuit board 300. The output terminal of the driving circuit is electrically connected to the substrate 420, and the surface of the substrate 420 is electrically connected to the electroabsorption modulation region, thereby establishing an electrical connection between the driving circuit and the electroabsorption modulation region to input a driving modulation signal to the electroabsorption modulation region.

[0175] In some embodiments, a reverse bias voltage and a modulation current signal are provided to the electroabsorption modulation region. Under the action of the reverse bias voltage, the intensity of the light emitted by the light-emitting region changes with the modulation current signal, thereby modulating the intensity and generating an optical signal carrying information.

[0176] In some embodiments, the electroabsorption modulation region is a PIN device that alters the light transmittance using the electroabsorption effect, wherein the I layer is composed of multiple quantum well waveguides. Modulation of the optical signal can be achieved through its quantum confinement effect. When a reverse electric field is applied to the active region of the electroabsorption modulation region, the PIN is reverse-biased, causing a shift in the electron-hole pair energy levels of the multiple quantum wells, thereby shifting the absorption peak position and ultimately modulating and generating an optical signal.

[0177] Figure 10a is an internal structure diagram of a laser chip according to some embodiments of the present disclosure, and Figure 10b is a schematic diagram of the optical path of a laser chip according to some embodiments of the present disclosure. As shown in Figures 10a and 10b, in some embodiments, the laser chip 900 is an on-chip integrated edge-emitting multi-channel optical signal, realizing multi-channel integration.

[0178] In some embodiments, the laser chip 900 integrates a light-emitting region, an electro-absorption modulation region, and an end-face coupler to achieve optical signal array output and low-loss coupling with the fiber array 430, thereby improving the transmission rate. In some embodiments, the laser chip 900 includes a light-emitting region. This light-emitting region emits a beam of light without carrying information along both ends of the active region. In some embodiments, the laser chip 900 integrates a beam splitter to split the optical signal emitted by the light-emitting region, thereby emitting multiple optical paths. The electro-absorption modulation region is located on the transmission optical path of the corresponding light to modulate the signal. Taking the laser chip 900 emitting four optical signals as an example, the laser chip 900 includes a first beam splitter and a second beam splitter. The first beam splitter splits the light emitted along one end of the active region, and the second beam splitter splits the light emitted along the other end of the active region, generating four optical paths. The first beam splitter and the second beam splitter can each be a 1×2 multimode interference coupler.

[0179] In some embodiments, the laser chip 900 includes multiple electro-absorption modulation regions. The multiple beams generated by beam splitting are transmitted via transmission waveguides, and each beam undergoes signal modulation through its respective electro-absorption modulation region to emit multi-channel optical signals. For example, if the laser chip 900 emits four optical signals, then the laser chip 900 includes one light-emitting region and four electro-absorption modulation regions.

[0180] In some embodiments, the output end face of the laser chip 900 integrates multiple end face couplers to perform mode conversion, converting the small light spot output by the laser chip 900 into a large light spot to match the mode spot of the fiber array 430, thereby achieving relatively low-loss coupling between the laser chip 900 and optical fibers of different sizes.

[0181] The following example illustrates the use of a laser chip 900 emitting four optical signals.

[0182] In some embodiments, the laser chip 900 may include a light-emitting region 910. The light-emitting region 910 emits a beam of light without carrying information from each end of the active region. One end of the light-emitting region 910 emits a first beam, and the other end emits a second beam. Neither the first beam nor the second beam carries information. If the end emitting the first beam is defined as the first end of the light-emitting region 910, and the end emitting the second beam is defined as the second end of the light-emitting region 910, then the light-emitting region 910 includes a first end and a second end, with the first end emitting the first beam and the second end emitting the second beam.

[0183] In some embodiments, the second beam is guided to the same propagation direction as the first beam. For example, the propagation direction of the second beam is guided from the second end to the first end so that the second beam's propagation direction is aligned with that of the first beam.

[0184] In some embodiments, the laser chip 900 may include a first beam splitter 920. The first beam splitter 920 is located in the transmission optical path of the first beam, and the first beam is input into the first beam splitter 920, where it is split into a first beam splitter and a second beam splitter. The first beam splitter is output from a first output end of the first beam splitter 920, and the second beam splitter is output from a second output end of the first beam splitter 920.

[0185] In some embodiments, the laser chip 900 may include a second beam splitter 930. The second beam splitter 930 and the first beam splitter 920 are located on the same side of the light-emitting region. Exemplarily, the second beam splitter 930 and the first beam splitter 920 are located on the same side as the first end. The second beam splitter 930 is located in the transmission optical path of the second beam, and the second beam is fed into the second beam splitter 930, where it is split into a third beam and a fourth beam. The third beam is output from the first output end of the second beam splitter 930, and the fourth beam is output from the second output end of the second beam splitter 930. Thus, there are four beams to be modulated in the output optical path of the light-emitting region 910.

[0186] In some embodiments, the laser chip 900 may include a first electro-absorption modulation region 940. The first electro-absorption modulation region 940 is optically connected to the first output end of the first beam splitter 920 to receive the first beam split. The first electro-absorption modulation region 940 is located in the transmission optical path of the first beam split to modulate the signal of the first beam split, thereby generating a first optical signal.

[0187] In some embodiments, the laser chip 900 may include a second electro-absorption modulation region 950. The second electro-absorption modulation region 950 is optically connected to the second output end of the first beam splitter 920 to receive the second beam split. The second electro-absorption modulation region 950 is located in the transmission optical path of the second beam split to modulate the signal of the second beam split, thereby generating a second optical signal.

[0188] In some embodiments, the laser chip 900 may include a third electroabsorption modulation region 960. The third electroabsorption modulation region 960 is optically connected to the first output end of the second beam splitter 930 to receive the third beam. The third electroabsorption modulation region 960 is located in the transmission optical path of the third beam to modulate the signal of the third beam, thereby generating a third optical signal.

[0189] In some embodiments, the laser chip 900 may include a fourth electro-absorption modulation region 970. The fourth electro-absorption modulation region 970 is optically connected to the second output end of the second beam splitter 930 to receive the fourth beam. The fourth electro-absorption modulation region 970 is located on the transmission optical path of the fourth beam to modulate the signal of the fourth beam, generating a fourth optical signal. Thus, the laser chip 900 modulates and generates four optical signals, realizing an optical signal array output, improving chip integration, and increasing transmission rate.

[0190] In some embodiments, the first electroabsorption modulation region 940 and the second electroabsorption modulation region 950 may be located on one side of the light-emitting region 910, and the third electroabsorption modulation region 960 and the fourth electroabsorption modulation region 970 may be located on the other side of the light-emitting region 910. The reasonable distribution of multiple electroabsorption modulation regions is beneficial for chip miniaturization.

[0191] In some embodiments, the first end of the light-emitting region 910 is optically connected to the first beam splitter 920, and the second end of the light-emitting region 910 is optically connected to the second beam splitter 930. The two light-emitting ends of the first beam splitter 920 are optically connected to the first electro-absorption modulation region 940 and the second electro-absorption modulation region 950, respectively, and the two light-emitting ends of the second beam splitter 930 are optically connected to the third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970, respectively.

[0192] In some embodiments, the light-emitting region 910 is connected to transmission waveguides between the first beam splitter 920 and the second beam splitter 930, respectively. A transmission waveguide is connected between the first light-emitting end of the first beam splitter 920 and the light-incident end of the first electro-absorption modulation region 940, and a transmission waveguide is connected between the second light-emitting end and the light-incident end of the second electro-absorption modulation region 950. A transmission waveguide is connected between the first light-emitting end of the second beam splitter 930 and the light-incident end of the third electro-absorption modulation region 960, and a transmission waveguide is connected between the second light-emitting end and the light-incident end of the fourth electro-absorption modulation region 970.

[0193] In some embodiments, a first transmission waveguide 981 is connected between the first end of the light-emitting region 910 and the first beam splitter 920 to guide the first light beam into the first beam splitter 920 for beam splitting. The first transmission waveguide 981 can be a straight waveguide. In some embodiments, a second transmission waveguide 982 is connected between the second end of the light-emitting region 910 and the second beam splitter 930 to guide the second light beam into the second beam splitter 930 for beam splitting.

[0194] In some embodiments, the second transmission waveguide 982 is a bent waveguide, which includes a first bending region 9821, with straight waveguides connected to both ends of the first bending region 9821. The first bending region 9821 bends from the second end of the light-emitting region 910 toward the first end of the light-emitting region 910, turning the optical path and thus reflecting the second beam back to the first end of the light-emitting region 910. In this way, the first beam splitter 920 and the second beam splitter 930 can be located on the same side of the light-emitting region 910, which is beneficial for chip miniaturization.

[0195] In some embodiments, the first output end of the first beam splitter 920 is optically connected to the input end of the first electroabsorption modulation region 940. A third transmission waveguide 983 is connected between the first output end of the first beam splitter 920 and the input end of the first electroabsorption modulation region 940. The third transmission waveguide 983 includes a second bending region 9831, which bends the transmission direction of the first beam splitter. Straight waveguides are connected to both ends of the second bending region 9831.

[0196] In some embodiments, the second output end of the first beam splitter 920 is optically connected to the input end of the second electro-absorption modulation region 950. A fourth transmission waveguide 984 is connected between the second output end of the first beam splitter 920 and the input end of the second electro-absorption modulation region 950. The fourth transmission waveguide 984 includes a third bending region 9841, which bends the transmission direction of the second beam splitter. Straight waveguides are connected to both ends of the third bending region 9841.

[0197] In some embodiments, the first output end of the second beam splitter 930 is optically connected to the input end of the third electroabsorption modulation region 960. A fifth transmission waveguide 985 is connected between the first output end of the second beam splitter 930 and the input end of the third electroabsorption modulation region 960. The fifth transmission waveguide 985 includes a fourth bending region 9851, which bends the transmission direction of the third beam splitter. Straight waveguides are connected to both ends of the fourth bending region 9851.

[0198] In some embodiments, the second output end of the second beam splitter 930 is optically connected to the input end of the fourth electro-absorption modulation region 970. A sixth transmission waveguide 986 is connected between the second output end of the second beam splitter 930 and the input end of the fourth electro-absorption modulation region 970. The sixth transmission waveguide 986 includes a fifth bending region 9861, which bends the transmission direction of the fourth beam splitter. Straight waveguides are connected to both ends of the fifth bending region 9861.

[0199] In some embodiments, the second bending region 9831 and the third bending region 9841 bend toward the same side, guiding the first beam splitter and the second beam splitter to the same side.

[0200] In some embodiments, the fourth bending region 9851 and the fifth bending region 9861 bend toward the same side, guiding the third beam splitter and the fourth beam splitter to the same side.

[0201] In some embodiments, the second bending region 9831 and the third bending region 9841 bend along the two output ends of the first beam splitter 920 toward the first side, and the fourth bending region 9851 and the fifth bending region 9861 bend along the two output ends of the second beam splitter 930 toward the second side opposite to the first side. In this way, the first beam splitter and the second beam splitter are guided to the first side, and the third beam splitter and the fourth beam splitter are guided to the second side, so as to reasonably deploy the optical path and facilitate the miniaturization of the highly integrated laser chip.

[0202] In some embodiments, the second bending region 9831 and the third bending region 9841 are bent toward the first side, respectively, guiding the first beam splitter and the second beam splitter to one side of the light-emitting region 910 for transmission. The first electroabsorption modulation region 940 and the second electroabsorption modulation region 950 are located on one side of the light-emitting region 910.

[0203] In some embodiments, the fourth bending region 9851 and the fifth bending region 9861 are bent toward the second side, respectively, guiding the third and fourth beam splitters to the other side of the light-emitting region 910 for transmission. The third electro-absorption modulation region 960 and the fourth electro-absorption modulation region 970 are located on the other side of the light-emitting region 910. The reasonable arrangement of the four electro-absorption modulation regions is beneficial for chip miniaturization.

[0204] In some embodiments, as the integration density of optical modules increases, it is necessary to further reduce the power consumption of the laser chip 900 to meet overall power consumption requirements. The laser chip 900 employs a differential drive mode to effectively reduce power consumption. The differential drive modulation signals enter the electroabsorption modulation region separately; these two differential signals have the same amplitude and frequency but opposite phase. Compared to single-ended drive chips, differential drive offers advantages such as stronger noise immunity, longer transmission distance, and lower power consumption.

[0205] In some embodiments, the first electroabsorption modulation region 940 includes a first electrode portion and a second electrode portion. The first electrode portion can be a P-plane electrode, and the second electrode portion can be an N-plane electrode. The first electrode portion and the second electrode portion are arranged in a coplanar electrode configuration to reduce the parasitic capacitance between the electrodes of the modulation region.

[0206] In some embodiments, the light-emitting region 910 shares a substrate with each electroabsorption modulation region. The substrate is a semi-insulating substrate to prevent the drive modulation signal connected to the electroabsorption modulation region from being interfered with by the light-emitting region 910, thus ensuring smooth differential driving.

[0207] In some embodiments, since the substrate is a semi-insulating substrate, the N-type electrode in the light-emitting region 910 and the second electrode portion of the first electroabsorption modulation region 940 cannot be disposed on the back side of the substrate 911. Therefore, the N-type electrode and the P electrode in the light-emitting region 910 are coplanar electrodes. The first electrode portion and the second electrode portion in the first electroabsorption modulation region 940 are also coplanar electrodes.

[0208] In some embodiments, the first electroabsorption modulation region 940 may include a first radio frequency electrode RF+. The first radio frequency electrode RF+ is electrically connected to the first electrode portion and inputs a first differential drive modulation signal to the first electroabsorption modulation region 940.

[0209] In some embodiments, the first electroabsorption modulation region 940 may include a second radio frequency electrode RF-. The first radio frequency electrode RF+ and the second radio frequency electrode RF- constitute a differential drive electrode. The second radio frequency electrode RF- is electrically connected to the second electrode portion to input a second differential drive modulation signal to the first electroabsorption modulation region 940. The second differential drive modulation signal and the first differential drive modulation signal constitute a differential pair.

[0210] In some embodiments, the first electroabsorption modulation region 940 may include a first DC electrode DC+. The first DC electrode DC+ is electrically connected to the first electrode portion to input a first differential reverse bias voltage to the first electroabsorption modulation region 940.

[0211] In some embodiments, the first electroabsorption modulation region 940 may include a second DC electrode DC-. The first DC electrode DC+ and the second DC electrode DC- constitute a differential reverse bias electrode. The second DC electrode DC- is electrically connected to the second electrode portion to input a second differential reverse bias voltage to the first electroabsorption modulation region 940. The second differential reverse bias voltage and the first differential reverse bias voltage form a differential pair.

[0212] In some embodiments, when the first electroabsorption modulation region 940 is operational, a first differential driving modulation signal and a second differential driving modulation signal with opposite phases are simultaneously applied to the first electrode portion and the second electrode portion, forming a differential driving mode. Based on the electro-optic modulation effect, light entering the active region of the first electroabsorption modulation region 940 is modulated by the differential driving modulation signal to generate an optical signal carrying information. Signal modulation is performed using a coplanar electrode differential driving method, thereby reducing power consumption.

[0213] In some embodiments, the first radio frequency electrode RF+ is electrically connected to the first electrode portion. The second radio frequency electrode RF- is electrically connected to the second electrode portion.

[0214] In some embodiments, if the first DC electrode DC+ is electrically connected to the first radio frequency electrode RF+, then the first DC electrode DC+ is electrically connected to the first electrode portion.

[0215] In some embodiments, if the second DC electrode DC- is electrically connected to the second radio frequency electrode RF-, then the second DC electrode DC- is electrically connected to the second electrode portion.

[0216] In some embodiments, the differential driving mode of the second electroabsorption modulation region 950, the third electroabsorption modulation region 960, and the fourth electroabsorption modulation region 970 is the same as that of the first electroabsorption modulation region 940, and will not be elaborated further.

[0217] In some embodiments, the first electroabsorption modulation region 940 and the second electroabsorption modulation region 950 are offset and disposed on one side of the light-emitting region 910 to deploy their respective differential driving electrodes and differential reverse bias electrodes.

[0218] In some embodiments, the third electroabsorption modulation region 960 and the fourth electroabsorption modulation region 970 are offset and disposed on the other side of the light-emitting region 910 to deploy their respective differential driving electrodes and differential reverse bias electrodes.

[0219] In some embodiments, the laser chip 900 outputs multiple optical signals. The first optical signal is output from the emitting end of the first electroabsorption modulation region 940, the second optical signal is output from the emitting end of the second electroabsorption modulation region 950, the third optical signal is output from the emitting end of the third electroabsorption modulation region 960, and the fourth optical signal is output from the emitting end of the fourth electroabsorption modulation region 970. The laser chip 900 has four emitting ports on its emitting end face, meaning the four emitting ports are located on the same side. Therefore, each optical signal generated by modulation is output along the same side of the laser chip 900, and coupled to the fiber array 430 along the same side, achieving multi-channel optical array output.

[0220] In some embodiments, there is a mismatch in the optical field mode size between the laser chip 900 and the fiber array 430, resulting in coupling loss between them. For example, the output spot size of the laser chip 900 is smaller than the coupled spot size of the fiber array 430.

[0221] In some embodiments, multiple couplers may be provided between the laser chip 900 and the optical fiber array 430 to achieve mode switching. In some embodiments, multiple couplers may be integrated inside the laser chip 900 to achieve mode switching.

[0222] In some embodiments, an end-face coupler is provided on the output optical path of each electro-absorption modulation region to perform mode conversion, thereby amplifying the optical signal spot size output by the electro-absorption modulation region, thereby increasing the coupling efficiency with the fiber array 430, reducing coupling loss, and realizing relatively low-loss coupling between the laser chip and optical fibers of different sizes. Thus, there is no need to set a separate converging lens between the laser chip 900 and the fiber array 430, and the laser chip 900 and the fiber array 430 can be directly end-face coupled.

[0223] In some embodiments, the laser chip 900 integrates various end-face couplers, enabling low-loss coupling with optical fibers of different diameters in waveguides with relatively wide and short waveguide tips.

[0224] In some embodiments, the structure of one of the couplers can be referred to as the coupler cross-sectional structure in FIG11a, specifically the structure of the first coupler 987 described below.

[0225] In some embodiments, a first coupler 987 is provided on the optical path of the first electroabsorption modulation region 940 to perform mode conversion on the first optical signal, thereby achieving low-loss coupling between the first optical signal and the fiber array 430. One end of the first coupler 987 is optically connected to the first electroabsorption modulation region 940, and the other end is optically connected to the fiber array 430.

[0226] In some embodiments, a second coupler 988 is provided on the optical path of the second electroabsorption modulation region 950 to perform mode conversion on the second optical signal, thereby achieving low-loss coupling between the second optical signal and the fiber array 430. One end of the second coupler 988 is optically connected to the second electroabsorption modulation region 950, and the other end is optically connected to the fiber array 430.

[0227] In some embodiments, a third coupler 989 is provided on the optical path of the third electroabsorption modulation region 960 to perform mode conversion on the third optical signal, thereby achieving low-loss coupling between the third optical signal and the fiber array 430. One end of the third coupler 989 is optically connected to the third electroabsorption modulation region 960, and the other end is optically connected to the fiber array 430.

[0228] In some embodiments, a fourth coupler 989a is provided on the optical path of the fourth electroabsorption modulation region 970 to perform mode conversion on the fourth optical signal, thereby achieving low-loss coupling between the fourth optical signal and the fiber array 430. One end of the fourth coupler 989a is optically connected to the fourth electroabsorption modulation region 970, and the other end is optically connected to the fiber array 430.

[0229] In some embodiments, a first coupler 987 is located between a first electroabsorption modulation region 940 and the light-emitting end face of a laser chip 900. A second coupler 988 is located between a second electroabsorption modulation region 950 and the light-emitting end face of a laser chip 900. A third coupler 989 is located between a third electroabsorption modulation region 960 and the light-emitting end face of a laser chip 900. A fourth coupler 989a is located between a fourth electroabsorption modulation region 970 and the light-emitting end face of a laser chip 900. The coupled optical signals are output along the light-emitting end face of the laser chip 900 and coupled into the fiber array 430.

[0230] In some embodiments, the first coupler 987, the second coupler 988, the third coupler 989, and the fourth coupler 989a may have the same structure. The following embodiments use the first coupler 987 as an example to illustrate its structure.

[0231] Figure 11a is a structural diagram of a first coupler according to some embodiments of the present disclosure, and Figure 11b is a cross-sectional structural diagram of a first coupler according to some embodiments of the present disclosure. As shown in Figures 11a and 11b, in some embodiments, a first coupler 987 is provided on the optical path of the first electro-absorption modulation region 940. The first coupler 987 is used to perform mode conversion on the first optical signal output from the first electro-absorption modulation region 940, amplify its spot size, and couple the first optical signal with a larger spot size into the fiber array 430, thereby realizing low-loss coupling between the laser chip 900 and the fiber array 430.

[0232] In some embodiments, the first coupler 987 may include a substrate 9871. The substrate 9871 is a semi-insulating substrate wafer.

[0233] In some embodiments, the first coupler 987 may include an N-InP layer 9872. The N-InP layer 9872 is located above the substrate 9871. The N-InP layer 9872 is an N-type doped InP layer.

[0234] In some embodiments, the first coupler 987 may include a P-InP layer 9873. The P-InP layer 9873 is located above the N-InP layer 9872. The P-InP layer 9873 is a P-type doped InP layer.

[0235] In some embodiments, the first coupler 987 may include a waveguide layer 9874. The waveguide layer 9874 is buried within a P-InP layer 9873. The waveguide layer 9874 is a passive transmission waveguide layer.

[0236] In some embodiments, the refractive indices of both the N-InP layer 9872 and the P-InP layer 9873 are less than the refractive index of the waveguide layer 9874, thereby confining the light field within the waveguide layer 9874 for transmission.

[0237] For example, one structure of waveguide layer 9874 will be described below.

[0238] Figure 11c is a schematic diagram of a waveguide layer planar structure according to some embodiments of the present disclosure. As shown in Figure 11c, in some embodiments, the waveguide layer 9874 includes a linearly tapered region 9876. The linearly tapered region 9876 can be a linearly tapered region. Non-tapered waveguide regions are connected to both ends of the linearly tapered region 9876, one of which is optically connected to the first electro-absorption modulation region 940, and the other is optically connected to the fiber array 430. The width of the non-tapered waveguide region optically connected to the first electro-absorption modulation region 940 is greater than the width of the non-tapered waveguide region optically connected to the fiber array 430.

[0239] In some embodiments, in the linear gradient region 9876, the waveguide width of the waveguide layer 9874 gradually narrows with the direction of optical field propagation. As the waveguide width narrows, the optical confinement factor of the waveguide layer 9874 decreases, the waveguide layer 9874's ability to confine the optical field weakens, and the light spot is squeezed into the N-InP layer 9872 and the P-InP layer 9873, thereby increasing the light spot size, improving the optical field mode matching with the fiber array 430, and enabling the first optical signal to be coupled into the fiber array 430 with low loss.

[0240] In some embodiments, when coupling the first optical signal to the fiber array 430, the output position of the first coupler 987 should have a narrow waveguide width. Simultaneously, the linear gradient region 9876 will also be relatively long. In some embodiments, a narrower waveguide width increases the difficulty of the etching process, while a longer linear gradient region 9876 results in a smaller divergence angle to satisfy adiabatic transmission.

[0241] As shown in Figures 11a and 11b, in some embodiments, the first coupler 987 may include a doped layer 9875. The doped layer 9875 is located within the N-InP layer 9872. The refractive index of the doped layer 9875 is greater than that of the N-InP layer 9872. The doped layer 9875 is a thin layer formed of InGaAsP material. Exemplarily, the thickness of the doped layer 9875 is less than the thickness of the N-InP layer 9872. For example, the thickness of the doped layer 9875 may be 60 nm.

[0242] In some embodiments, when the waveguide width of the linear gradient region 9876 is large, the role of the doped layer 9875 is limited. As the waveguide width narrows, the ability to confine the light spot weakens, the light spot becomes larger, and the optical field boundary extends to the doped layer 9875. The doped layer 9875 has a high refractive index, which helps to distribute more optical field in this layer structure, further enlarging the light spot size and increasing the coupling efficiency between the first optical signal and the fiber array 430.

[0243] In some embodiments, with the same waveguide width, the presence of the doped layer 9875 results in a larger spot size compared to when the doped layer 9875 is not present. Therefore, when forming the same spot size, based on the doped layer 9875, the required waveguide width at the output position is narrower, reducing the dependence on waveguide width, lowering the difficulty of waveguide etching, and overcoming the technical barrier of more difficult etching processes for narrower waveguide widths.

[0244] In some embodiments, the refractive index relationship among waveguide layer 9874, doped layer 9875, P-InP layer 9873, and N-InP layer 9872 can be: waveguide layer 9874 > doped layer 9875 > P-InP layer 9873 > N-InP layer 9872. For example, at the same doping concentration, P-InP layer 9873 is greater than N-InP layer 9872.

[0245] In some embodiments, the refractive index of the doped layer 9875 is greater than that of the P-InP layer 9873. The higher refractive index of the doped layer 9875 helps to distribute more light field in the layer structure, further amplifying the spot size. The refractive index of the doped layer 9875 is less than that of the waveguide layer 9874, allowing the main light field to be distributed more in the waveguide layer 9874 for transmission, which helps to reduce transmission loss.

[0246] In some embodiments, the P-InP layer 9873 has a high refractive index, and the waveguide layer 9874 is buried within the P-InP layer 9873, which helps to confine the light field within the waveguide layer 9874 for transmission and reduce transmission loss.

[0247] In some embodiments, by forming a doped layer 9875 in the N-InP layer 9872, the doped layer 9875 has a high refractive index, which helps to distribute more light field in the layer structure and further enlarge the spot size. Therefore, when forming the same spot size, the waveguide width required is smaller due to the setting of the doped layer 9875, which reduces the dependence on the waveguide width and reduces the difficulty of the waveguide etching process.

[0248] As an example, another structure of waveguide layer 9874 will be illustrated below.

[0249] Figure 11d is a schematic diagram of another waveguide layer planar structure provided according to some embodiments of the present disclosure. As shown in Figure 11d, in some embodiments, the waveguide layer 9874 includes a nonlinear gradient region 9877. One end of the nonlinear gradient region 9877 is connected to a first non-gradient region 9878, and the other end is connected to a second non-gradient region 9879.

[0250] In some embodiments, the first non-gradient region 9878 faces the first electro-absorption modulation region 940, and the first non-gradient region 9878 is optically connected to the first electro-absorption modulation region 940 to receive the optical signal output by the first electro-absorption modulation region 940.

[0251] In some embodiments, the second non-gradient region 9879 faces the fiber array 430 and is optically connected to the fiber array 430 to transmit the mode-converted optical signal into the fiber array 430.

[0252] In some embodiments, the waveguide width of the first non-gradient region 9878 depends on the single-mode conditions of the laser chip 900, and the waveguide width of the second non-gradient region 9879 depends on the coupling efficiency with the fiber array 430. For example, the waveguide width of the first non-gradient region 9878 is greater than the waveguide width of the second non-gradient region 9879.

[0253] In some embodiments, a nonlinear gradient region 9877 connects the first non-gradient region 9878 and the second non-gradient region 9879. In the nonlinear gradient region 9877, the waveguide width gradually changes from the first non-gradient region 9878 to the waveguide width of the second non-gradient region 9879. The waveguide width connecting the nonlinear gradient region 9877 to the first non-gradient region 9878 is greater than the waveguide width connecting the nonlinear gradient region 9877 to the second non-gradient region 9879.

[0254] In some embodiments, the nonlinear gradient region 9877 employs a nonlinear gradient region. The narrower the waveguide width, the more drastic the change in the optical field divergence angle with the waveguide width. Therefore, when the waveguide width is wider, the change can be faster, while when the waveguide width is narrower, the change should be slower to ensure fundamental mode coupling efficiency and avoid exciting higher-order modes. In this case, the objective can be achieved with a relatively short nonlinear gradient region 9877 length.

[0255] In some embodiments, the outer contour of the nonlinear gradient region 9877 is an arc, with one side being the first arc 9771 and the other side being the second arc 9772. Exemplarily, the first arc 9771 is a concave arc, recessed towards the waveguide center. The second arc 9772 is a convex arc, protruding towards the waveguide center. Along the direction from the first non-gradient region 9878 to the second non-gradient region 9879, the waveguide width between the first arc 9771 and the second arc 9772 gradually decreases. The waveguide width between the first arc 9771 and the second arc 9772 tends to be the same as the waveguide width of the second non-gradient region. This ensures that the waveguide width changes rapidly when it is large and slowly when it is narrow, thereby ensuring the fundamental mode coupling efficiency and avoiding the excitation of higher-order modes. The thermal insulation length of the nonlinear gradient region 9877 is shortened, effectively reducing the overall length of the first coupler 940.

[0256] Figure 12 is a cross-sectional structural diagram of a light-emitting region according to some embodiments of the present disclosure, and Figure 13 is a three-dimensional structural diagram of a light-emitting region according to some embodiments of the present disclosure. As shown in Figures 12 and 13, in some embodiments, in the light-emitting region 910, the first end and the second end, which are arranged opposite to each other, emit light respectively. The emitted light does not carry information and is to be modulated.

[0257] In some embodiments, a bias current is provided to the light-emitting region 910, and the light-emitting region 910 emits light under the action of the bias current.

[0258] In some embodiments, the light-emitting region 910 may include a substrate 911.

[0259] In some embodiments, the light-emitting region 910 may include an N-InP layer 912. The N-InP layer 912 is located above the substrate 911. The N-InP layer 912 is an N-type doped InP layer. The N-InP layer 912 primarily outputs N-type carriers.

[0260] In some embodiments, the light-emitting region 910 may include a first active layer 913. The first active layer 913 is located above the N-InP layer 912. The first active layer 913 employs a multi-quantum-well structure. The first active layer 913 is configured to generate photons by recombination of P-type carriers and N-type carriers. The N-type carriers originate from the N-InP layer 912.

[0261] In some embodiments, the light-emitting region 910 may include a grating layer 914. The grating layer 914 is located above the first active layer 913.

[0262] In some embodiments, the light-emitting region 910 may include a P-InP layer 915. The P-InP layer 915 is located above the grating layer 914. The P-InP layer 915 is a P-type doped InP layer. The P-InP layer 915 primarily outputs P-type carriers. The P-InP layer 915 inputs P-type carriers to the first active layer 913.

[0263] In some embodiments, within the first active layer 913, stimulated emission causes discrete P-type and N-type carrier pairs to recombine and generate photons, thereby converting injected carriers into photons. These photons are reflected by the resonant cavity or distributed feedback grating to form positive feedback, generating laser light. By changing the current injected into the grating layer 914, the effective refractive index of the grating layer 914 can be altered, thereby changing the laser resonant lasing wavelength and achieving output at a specific wavelength. Light without signal carrying is output from both ends of the first active layer 913.

[0264] In some embodiments, to ensure that the light output power of the two ends of the first active layer 913 is consistent, the grating layer 914 can be a phase-shift grating or a CPM grating, etc.

[0265] In some embodiments, the light-emitting region 910 may include a P-type electrode 916 and an N-type electrode 917. Both are coplanar electrodes. The P-type electrode 916 and the N-type electrode 917 are electrically connected to a forward bias current source for power supply.

[0266] Figure 14 is a partial cross-sectional view of a laser chip according to some embodiments of the present disclosure. Figure 14 shows the cross-sectional structure corresponding to section line A in Figure 10a. As shown in Figure 14, in some embodiments, the second end of the light-emitting region 910 is connected to a second transmission waveguide 982, which reflects the second beam emitted from the second end of the light-emitting region 910 back to the first end.

[0267] In some embodiments, the light-emitting region 910 and the second transmission waveguide 982 may employ the same waveguide structure. In the light-emitting region 910, the first active layer 913 employs a multi-quantum-well structure for signal modulation. In this layer, the corresponding structure of the second transmission waveguide 982 is a transmission layer 9822, which employs a waveguide material with low transmission loss to reduce transmission loss.

[0268] In some embodiments, the P-type electrode 916 is relatively long, covering the light-emitting area 910 and the corresponding surface of the second transmission waveguide 982.

[0269] In some embodiments, a SiO2 layer 919a is provided below the P-type electrode 916. A window is opened on the surface of the P-InP layer 915 to remove the corresponding SiO2 layer, thereby ensuring the conductivity between the P-type electrode 916 and the first active layer 913. In the region corresponding to the second transmission waveguide 982, a SiO2 layer 919a is provided below the P-type electrode 916 to achieve insulation.

[0270] In some embodiments, the first electroabsorption modulation region 940, the second electroabsorption modulation region 950, the third electroabsorption modulation region 960, and the fourth electroabsorption modulation region 970 may adopt the same structure. The following embodiments take the first electroabsorption modulation region 940 as an example to illustrate its structure.

[0271] Figure 15 is a cross-sectional view of a first electroabsorption modulation region according to some embodiments of the present disclosure. Figure 15 shows the cross-sectional structure corresponding to section line B in Figure 10a. As shown in Figure 15, in some embodiments, the first electroabsorption modulation region 940 adopts a differential driving mode.

[0272] In some embodiments, the first electroabsorption modulation region 940 includes a substrate 941.

[0273] In some embodiments, the first electroabsorption modulation region 940 includes an N-InP layer 942. The N-InP layer 942 is located above the substrate 941. The N-InP layer 942 is an N-type doped InP layer. The N-InP layer 942 primarily outputs N-type carriers.

[0274] In some embodiments, the first electroabsorption modulation region 940 includes a second active layer 943. The second active layer 943 is located above the N-InP layer 942. The second active layer 943 employs a multi-quantum-well structure.

[0275] In some embodiments, the first electroabsorption modulation region 940 includes a P-InP layer 944. The P-InP layer 944 is located above the second active layer 943. The P-InP layer 944 is a P-type doped InP layer. The P-InP layer 944 primarily outputs P-type carriers. The P-InP layer 944 inputs P-type carriers to the second active layer 943, and the N-InP layer 942 inputs N-type carriers to the second active layer 943, thereby inputting a signal to the first electroabsorption modulation region 940.

[0276] In some embodiments, the first electroabsorption modulation region 940 includes a first electrode portion 945. The first electrode portion 945 is located above the P-InP layer 944. Exemplarily, the first electrode portion 945 is a P-type electrode.

[0277] In some embodiments, the first electroabsorption modulation region 940 includes a second electrode portion 946. The second electrode portion 946 and the first electrode portion 945 are coplanar electrodes. Exemplarily, the second electrode portion 946 is an N-type electrode.

[0278] In some embodiments, the first electrode portion 945 and the second electrode portion 946 are respectively electrically connected to a reverse bias electric field.

[0279] In some embodiments, the first electroabsorption modulation region 940 includes a first radio frequency electrode 9471. The first radio frequency electrode 9471 is electrically connected to the first electrode portion 945 to input a first differential drive modulation signal to the second active layer 943.

[0280] In some embodiments, a trench is provided between the first radio frequency electrode 9471 and the waveguide structure of the first electroabsorption modulation region 940 to achieve electrical isolation and ensure the quality of radio frequency signal transmission. A first electrical connection bridge 9481 is electrically connected between the first radio frequency electrode 9471 and the first electrode portion 945 to establish an electrical connection between the first radio frequency electrode 9471 and the first electrode portion 945.

[0281] Figure 16 is a cross-sectional view of a first electroabsorption modulation region according to some embodiments of the present disclosure. Figure 16 shows the cross-sectional structure corresponding to section line C in Figure 10a. As shown in Figure 16, in some embodiments, the first electroabsorption modulation region 940 adopts a differential driving mode.

[0282] In some embodiments, the first electroabsorption modulation region 940 includes a second radio frequency electrode 9472. The second radio frequency electrode 9472 is electrically connected to the second electrode portion 946 to input a second differential drive modulation signal to the second active layer 943.

[0283] In some embodiments, a trench is provided between the second RF electrode 9472 and the waveguide structure of the first electroabsorption modulation region 940 to achieve electrical isolation and ensure the quality of RF signal transmission. A second electrical connection bridge 9482 is electrically connected between the second RF electrode 9472 and the second electrode portion 946 to establish an electrical connection between the second RF electrode 9472 and the second electrode portion 946.

[0284] In some embodiments, the first electrical connection bridge 9481 and the second electrical connection bridge 9482 may each be an air bridge. An air bridge utilizes air, which has a low dielectric constant, as the dielectric, reducing parasitic capacitance. Due to the low dielectric constant of air, signal transmission speed in an air bridge is relatively fast, with less loss. The structural design of an air bridge can optimize the signal transmission path, reduce signal reflection and scattering during transmission, thereby improving signal transmission efficiency and quality.

[0285] In some embodiments, the first electrical connection bridge 9481 and the second electrical connection bridge 9482 are integrated inside the chip, and since they are chip-level structures, they are different from the gold wire bonding method.

[0286] Figure 17 is a cross-sectional view of a first electroabsorption modulation region according to some embodiments of the present disclosure. Figure 17 shows the cross-sectional structure corresponding to section line D in Figure 10a. As shown in Figure 17, in some embodiments, the first electroabsorption modulation region 940 adopts a differential driving mode.

[0287] In some embodiments, the first electroabsorption modulation region 940 includes a first DC electrode 9473.

[0288] In some embodiments, the first DC electrode 9473 is electrically connected to the first RF electrode 9471. The first RF electrode 9471 is electrically connected to the first electrode portion 945, and the first DC electrode 9473 is electrically connected to the first electrode portion 945, thus inputting a first differential reverse bias voltage to the second active layer 943.

[0289] In some embodiments, a first connection resistor 9491 is provided between the first DC electrode 9473 and the first RF electrode 9471 to establish an electrical connection between them. The first connection resistor 9491 is an on-chip integrated resistor.

[0290] In some embodiments, an electrical isolation trench is formed between the first radio frequency electrode 9471 and the first DC electrode 9473 to prevent crosstalk between the radio frequency signal and the DC signal. A third electrical connection bridge 9483 is formed above the electrical isolation trench.

[0291] In some embodiments, a first connection resistor 9491 and a third electrical connection bridge 9483 are connected between the first radio frequency electrode 9471 and the first DC electrode 9473 to realize the electrical connection between the first radio frequency electrode 9471 and the first DC electrode 9473.

[0292] In some embodiments, one end of the first radio frequency electrode 9471 is connected to a first connection resistor 9491, one end of the first connection resistor 9491 is connected to a third electrical connection bridge 9483, and one end of the third electrical connection bridge 9483 is connected to a first DC electrode 9473, thereby realizing the electrical connection between the first radio frequency electrode 9471 and the first DC electrode 9473, and further realizing the electrical connection between the first DC electrode 9473 and the first electrode portion 945.

[0293] Figure 18 is a cross-sectional view of a first electroabsorption modulation region according to some embodiments of the present disclosure. Figure 18 shows the cross-sectional structure corresponding to section line E in Figure 10a. As shown in Figure 18, in some embodiments, each electroabsorption modulation region adopts a differential driving mode. Therefore, the first electroabsorption modulation region 940 adopts a differential driving mode. The differential driving implementation will be exemplarily described below using the first electroabsorption modulation region 940 as an example.

[0294] In some embodiments, the first electroabsorption modulation region 940 includes a second DC electrode 9474.

[0295] In some embodiments, the second DC electrode 9474 is electrically connected to the second RF electrode 9472. The second RF electrode 9472 is electrically connected to the second electrode portion 946, and the second DC electrode 9474 is electrically connected to the second electrode portion 946, thus inputting a second differential reverse bias voltage to the second active layer 943.

[0296] In some embodiments, a second connection resistor 9492 is provided between the second RF electrode 9472 and the second DC electrode 9474 to establish an electrical connection between them. The second connection resistor 9492 is an on-chip integrated resistor.

[0297] In some embodiments, an electrical isolation trench is formed between the second radio frequency electrode 9472 and the second DC electrode 9474 to prevent crosstalk between the radio frequency signal and the DC signal. A fourth electrical connection bridge 9484 is formed above the electrical isolation trench.

[0298] In some embodiments, a second connection resistor 9492 and a fourth electrical connection bridge 9484 are connected between the second radio frequency electrode 9472 and the second DC electrode 9474, thereby realizing the electrical connection between the second radio frequency electrode 9472 and the second DC electrode 9474.

[0299] In some embodiments, one end of the second radio frequency electrode 9472 is connected to a second connection resistor 9492, one end of the second connection resistor 9492 is connected to a fourth electrical connection bridge 9484, and one end of the fourth electrical connection bridge 9484 is connected to a second DC electrode 9474, thereby realizing the electrical connection between the second radio frequency electrode 9472 and the second DC electrode 9474, and further realizing the electrical connection between the second DC electrode 9474 and the second electrode portion 946.

[0300] In some embodiments, the first connecting resistor 9491 and the second connecting resistor 9492 are on-chip thin-film resistors, which can be implemented using semiconductor materials such as TaN or TiN. The sheet resistance is adjusted by the thickness, and the required resistance value is adjusted by the length and width. On-chip integrated resistors can reduce wire bonding length and decrease the impact of parasitic parameters on the high-speed performance of the chip.

[0301] In some embodiments, each electrical connection bridge may adopt an air bridge structure to reduce parasitic parameters and improve the high-speed characteristics of the chip.

[0302] In some embodiments, the first radio frequency electrode 9471, the second radio frequency electrode 9472, the first DC electrode 9473, and the second DC electrode 9474 are respectively disposed on the surface of the laser chip 900. As shown in FIG10a, the first DC electrode 9473 is located on one side of the first radio frequency electrode 9471, and the second radio frequency electrode 9472 is located on the other side of the first radio frequency electrode 9471, so the first DC electrode 9473, the first radio frequency electrode 9471, and the second radio frequency electrode 9472 are arranged sequentially. The first radio frequency electrode 9471 is located on one side of the second radio frequency electrode 9472, and the second DC electrode 9474 is located on the other side of the second radio frequency electrode 9472, so the first DC electrode 9473, the first radio frequency electrode 9471, the second radio frequency electrode 9472, and the second DC electrode 9474 are arranged sequentially on the surface of the laser chip. The linear arrangement occupies a small area, which is beneficial for arranging these electrodes of the four electro-absorption modulation regions on the surface of the laser chip, thereby meeting the differential driving mode requirements of the four electro-absorption modulation regions.

[0303] In some embodiments, a method for fabricating a laser chip is provided. In this application embodiment, the laser chip is fabricated by etching, including: growing an N-InP layer along the surface of a substrate, growing a quantum well layer upward along the surface of the N-InP layer, and photolithographically fabricating a grating on the surface of the quantum well layer.

[0304] Then, the quantum well layer and grating of a predetermined width are etched away, and the remaining portion forms the first active layer 913 and grating layer 914 in the light-emitting region. Quantum well material is epitaxially grown along the first active layer 913 and grating layer 914 to subsequently fabricate the active layer of the electro-absorption modulation region. Waveguide layer material in the transmission waveguides is then grown along the quantum well material to subsequently fabricate each transmission waveguide. A large-area P-InP layer is grown along the current surface.

[0305] The quantum well material is etched to form the active layers in the first electro-absorption modulation region 940, the second electro-absorption modulation region 950, the third electro-absorption modulation region 960, and the fourth electro-absorption modulation region 970. The waveguide layer material is etched to form the first transmission waveguide 981, the second transmission waveguide 982, the third transmission waveguide 983, the fourth transmission waveguide 984, the fifth transmission waveguide 985, and the sixth transmission waveguide 986.

[0306] P-type electrodes 916, N-type electrodes 917, a first bias electrode 918, and a second bias electrode 919 are formed in the light-emitting region by metal deposition. A first electrode portion 945, a second electrode portion 946, a first radio frequency electrode 9471, a second radio frequency electrode 9472, a first DC electrode 9473, and a second DC electrode 9474 are also formed for each electro-absorption modulation region, facilitating the implementation of a differential driving mode. A first electrical connection bridge is formed between the first radio frequency electrode 9471 and the first electrode portion 945 corresponding to the electro-absorption modulation region, electrically connecting the first radio frequency electrode 9471 and the first electrode portion 945.

[0307] A second electrical bridge is formed between the second RF electrode 9472 and the second electrode portion 946 corresponding to the electroabsorption modulation region, electrically connecting the second RF electrode 9472 and the second electrode portion 946. A first connecting resistor and a third electrical bridge are formed between the first RF electrode 9471 and the first DC electrode 9473, electrically connecting the first RF electrode 9471 and the first DC electrode 9473, and further electrically connecting the first DC electrode 9473 and the first electrode portion 945. A second connecting resistor and a fourth electrical bridge are formed between the second RF electrode 9472 and the second DC electrode 9474, electrically connecting the second RF electrode 9472 and the second DC electrode 9474, and further electrically connecting the second DC electrode 9474 and the second electrode portion 946.

[0308] In some embodiments, a first coupler 987 is etched in the light output path of the first electroabsorption modulation region 940, a second coupler 988 is etched in the light output path of the second electroabsorption modulation region 950, a third coupler 989 is etched in the light output path of the third electroabsorption modulation region 960, and a fourth coupler 989a is etched in the light output path of the fourth electroabsorption modulation region 970.

[0309] Figure 19 is a structural diagram of a laser component according to some embodiments of the present disclosure, and Figure 20 is an exploded view of a laser component according to some embodiments of the present disclosure. As shown in Figures 19 and 20, in some embodiments, the laser component 460 includes a laser chip 900 and a substrate 420. A circuit pattern is formed on the surface of the substrate 420 to establish electrical connections with the circuit board 300 and the laser chip 900, respectively.

[0310] In some embodiments, the surface of the laser chip 900 is wire-connected to the surface of the substrate 420 to achieve electrical connection between the laser chip 900 and the substrate 420.

[0311] In some embodiments, when the substrate 420 is made of different materials, the laser chip 900 and the substrate 420 have different positional relationships. For example, when the substrate 420 is made of a first material, such as a ceramic substrate, the laser chip 900 is located on the surface of the substrate 420, and there is a height difference between the surface of the laser chip 900 and the surface of the substrate 420, resulting in a relatively long bonding wire between them. For example, when the substrate 420 is made of a second material, such as a silicon substrate, the laser chip 900 can be embedded inside the substrate 420, so that the surface of the laser chip 900 is flush with the surface of the substrate 420, shortening the bonding wire length between them, which is beneficial for improving high-frequency signal transmission performance and increasing signal bandwidth.

[0312] In some embodiments, when the substrate 420 is made of a second material, such as a silicon substrate, a groove 421a is formed on the surface of the substrate 420. The laser chip 900 is embedded in the groove 421a to ensure that the surface of the laser chip 900 is flush with the surface of the substrate 420, thereby shortening the wire bonding length between them.

[0313] In some embodiments, the laser chip 900 includes multiple electro-absorption modulation regions to modulate multiple optical signals and achieve multi-channel optical signal array output.

[0314] In some embodiments, the laser chip 900 includes a first electro-absorption modulation region 940, a second electro-absorption modulation region 950, a third electro-absorption modulation region 960, and a fourth electro-absorption modulation region 970, which modulate the four-channel light signal to achieve four-channel array output.

[0315] In some embodiments, the first electroabsorption modulation region 940, the second electroabsorption modulation region 950, the third electroabsorption modulation region 960 and the fourth electroabsorption modulation region 970 respectively adopt differential driving mode to reduce power consumption.

[0316] In some embodiments, the first electroabsorption modulation region 940 includes a first radio frequency electrode 9471, a second radio frequency electrode 9472, a first DC electrode 9473, and a second DC electrode 9474. These four electrodes are disposed on the surface of the laser chip 900. Correspondingly, the four electrodes of the remaining electroabsorption modulation regions are also disposed on the surface of the laser chip 900. Exemplarily, these electrodes are disposed side by side on the surface of the laser chip 900.

[0317] In some embodiments, a light-emitting region 910 is formed at one end of the laser chip 900, emitting multiple beams of light without carrying information. Multiple modulation regions are formed on one side of the light-emitting region 910. In each modulation region, one of the beams of light without carrying information modulates a signal to generate an optical signal. Multiple optical signals can be generated by modulation through the multiple modulation regions. An output port region 900d is formed on one side of the multiple modulation regions. The output port region 900d includes multiple output ports, and the modulated optical signals are output along the corresponding output ports. The output port region 900d is positioned opposite the light-emitting region 910, with the multiple modulation regions located between the light-emitting region 910 and the output port region 900d. The multiple optical signals generated by the modulation of the multiple modulation regions are output along the output port region 900d. Thus, the laser chip can output multiple optical signals, achieving array-based light output, improving chip integration, and increasing the transmission rate of the optical module. The multiple modulation regions include a first electroabsorption modulation region 940, a second electroabsorption modulation region 950, a third electroabsorption modulation region 960, and a fourth electroabsorption modulation region 970.

[0318] Figure 21 is a surface structure diagram of a laser component according to some embodiments of the present disclosure, and Figure 22 is a surface layout structure diagram of a laser component according to some embodiments of the present disclosure. As shown in Figures 21 and 22, in some embodiments, the surface of the substrate 420 has a circuit pattern to realize the electrical connection between the substrate 420 and the circuit board 300 and the laser chip 900, respectively.

[0319] In some embodiments, two differential bias circuits are added to the output circuit of the electroabsorption modulation region to improve high-frequency performance and reduce the overall design size of the chip.

[0320] In some embodiments, the dashed rectangle A on the surface of the laser chip 900 marks the area corresponding to the first electroabsorption modulation region 940. The dashed rectangle B marks the area corresponding to the second electroabsorption modulation region 950. The dashed rectangle C marks the area corresponding to the third electroabsorption modulation region 960. The dashed rectangle D marks the area corresponding to the fourth electroabsorption modulation region 970.

[0321] In some embodiments, the electrode circled by the dashed rectangle A is the first electrode group in the first electroabsorption modulation region 940. The first electrode group includes a first radio frequency electrode 9471, a second radio frequency electrode 9472, a first DC electrode 9473, and a second DC electrode 9474.

[0322] In some embodiments, the electrode circled by the dashed rectangle B is the second electrode group in the second electroabsorption modulation region 950. The composition of the second electrode group is the same as that of the first electrode group.

[0323] In some embodiments, the electrode circled by the dashed rectangle C is the third electrode group in the third electroabsorption modulation region 960. The third electrode group includes a third radio frequency electrode 9471a, a fourth radio frequency electrode 9472a, a third DC electrode 9473a, and a fourth DC electrode 9474a.

[0324] In some embodiments, the electrode circled by the dashed rectangle D is the fourth electrode group in the fourth electroabsorption modulation region 970. The composition of the fourth electrode group is the same as that of the first electrode group.

[0325] In some embodiments, the first radio frequency electrode 9471 is electrically connected to the first electrode portion 945. The second radio frequency electrode 9472 is electrically connected to the second electrode portion 946.

[0326] In some embodiments, the first DC electrode 9473 is electrically connected to the first radio frequency electrode 9471, and the first DC electrode 9473 is electrically connected to the first electrode portion 945. Exemplarily, a first connection resistor 9491 is provided between the first DC electrode 9473 and the first radio frequency electrode 9471.

[0327] In some embodiments, the second DC electrode 9474 is electrically connected to the second radio frequency electrode 9472, and the second DC electrode 9474 is also electrically connected to the second electrode portion 946. Exemplarily, a second connection resistor 9492 is provided between the second DC electrode 9474 and the second radio frequency electrode 9472.

[0328] In some embodiments, the substrate 420 surface is provided with differential drive signal lines corresponding to four electro-absorption modulation regions. Using differential traces can improve the mutual coupling characteristics during signal transmission, reduce dependence on ground, and increase signal bandwidth.

[0329] In some embodiments, the inner layer of the substrate 420 is provided with differential bias signal lines corresponding to four electroabsorption modulation regions to avoid crossing with differential drive signal lines, thereby avoiding interference of DC signals on the radio frequency signals and ensuring the quality of radio frequency signal transmission.

[0330] In some embodiments, a first region 900a, a second region 900b, and a third region 900c are formed on the surface of the laser chip 900. The first region 900a and the second region 900b are arranged adjacent to each other, and the first region 900a and the third region 900c are arranged opposite to each other. The light output port region 900d is arranged opposite to the second region 900b.

[0331] In some embodiments, the first region 900a is located on the side adjacent to the second region 900b, and the third region 900c is located on the other side adjacent to the second region 900b. The light output port region 900d is located on the opposite side of the second region 900b.

[0332] In some embodiments, the surface of the first region 900a is provided with a first electrode group in the first electroabsorption modulation region 940 and a second electrode group in the second electroabsorption modulation region 950.

[0333] In some embodiments, a first bias electrode and a second bias electrode are disposed on the surface of the second region 900b, and the first bias electrode and the second bias electrode are electrically connected to the light-emitting region to input a bias current to the light-emitting region.

[0334] In some embodiments, the surface of the third region 900c is provided with a third electrode group in the third electroabsorption modulation region 960 and a second electrode group in the fourth electroabsorption modulation region 970.

[0335] In some embodiments, taking the first electroabsorption modulation region 940 as an example, a first differential drive signal line 4221 and a second differential drive signal line 4222 are formed on the surface of the substrate 420, and the two are electrically connected to the first electroabsorption modulation region 940 to input differential drive modulation signals to the first electroabsorption modulation region 940.

[0336] In some embodiments, one end of the first differential drive signal line 4221 is electrically connected to the circuit board 300, and the other end is electrically connected to the first radio frequency electrode 9471 to input the first differential drive modulation signal to the first electroabsorption modulation region 940.

[0337] In some embodiments, one end of the second differential drive signal line 4222 is electrically connected to the circuit board 300, and the other end is electrically connected to the second radio frequency electrode 9472 to input the second differential drive modulation signal to the first electroabsorption modulation region 940.

[0338] In some embodiments, a first signal pad 4231 and a second signal pad 4232 are provided on a surface of the substrate 420 adjacent to the laser chip 900, and a third signal pad 4233 and a fourth signal pad 4234 are provided on a surface of the substrate 420 adjacent to the circuit board 300.

[0339] In some embodiments, a first differential drive signal line 4221 is connected between the first signal pad 4231 and the third signal pad 4233. The first differential drive signal line 4221 is wire-connected to the first radio frequency electrode 9471, and the first radio frequency electrode 9471 is electrically connected to the first electrode portion 945, thereby inputting a first differential drive modulation signal to the first electroabsorption modulation region 940.

[0340] In some embodiments, a second differential drive signal line 4222 is connected between the second signal pad 4232 and the fourth signal pad 4234. The second differential drive signal line 4222 is wire-connected to the second radio frequency electrode 9472, and the second radio frequency electrode 9472 is electrically connected to the second electrode portion 946, thereby inputting a second differential drive modulation signal to the first electroabsorption modulation region 940.

[0341] In some embodiments, the first DC electrode 9473, the first RF electrode 9471, the second RF electrode 9472, and the second DC electrode 9474 are sequentially disposed on the surface of the laser chip. The linear arrangement occupies a small area, which is beneficial for arranging these electrodes of the four electro-absorption modulation regions on the surface of the laser chip, thereby meeting the differential driving mode requirements of the four electro-absorption modulation regions.

[0342] In some embodiments, to meet the differential driving mode requirements of the laser chip 900, a first signal pad 4231 is disposed on the surface of the substrate 420 and electrically connected to the first radio frequency electrode 9471. A second signal pad 4232 is disposed on one side of the first signal pad 4231 and electrically connected to the second radio frequency electrode 9471. A third signal pad 4233 and a fourth signal pad 4234 are disposed on the side near the circuit board 300 and electrically connected to the circuit board 300.

[0343] In some embodiments, a first differential drive signal line 4221 is connected between the first signal pad 4231 and the third signal pad 4233. The first differential drive signal line 4221 electrically connects the first radio frequency electrode 9471 and the circuit board 300, thereby inputting a first differential drive modulation signal to the first electroabsorption modulation region 940 through the first radio frequency electrode 9471.

[0344] In some embodiments, a second differential drive signal line 4222 is connected between the second signal pad 4232 and the fourth signal pad 4234. The second radio frequency electrode 9472 is electrically connected to the circuit board 300 through the second differential drive signal line 4222, thereby inputting a second differential drive modulation signal from the second radio frequency electrode 9472 to the first electroabsorption modulation region 940.

[0345] In some embodiments, to meet the differential drive mode requirements of the laser chip 900, the fifth signal pad 4241 is located on the other side of the first signal pad 4231 and is electrically connected to the first DC electrode 9473. The sixth signal pad 4243 is located on one side of the second signal pad 4232 and is electrically connected to the second DC electrode 9473. The seventh signal pad 4242 is located near the circuit board 300 and is electrically connected to the circuit board 300. The eighth signal pad 4244 is located on one side of the seventh signal pad 4242 and is electrically connected to the circuit board 300.

[0346] In some embodiments, a first differential bias signal line 4251 is connected between the fifth signal pad 4241 and the seventh signal pad 4242. The first differential bias signal line 4251 is electrically connected to the first DC electrode 9473 and the circuit board 300, thereby inputting a first differential reverse bias voltage to the first electroabsorption modulation region 940 through the first DC electrode 9473.

[0347] In some embodiments, a second differential bias signal line 4252 is connected between the sixth signal pad 4243 and the eighth signal pad 4244. The second differential bias signal line 4252 is electrically connected to the second DC electrode 9474 and the circuit board 300, thereby inputting a second differential reverse bias voltage into the first electroabsorption modulation region 940 through the second DC electrode 9474.

[0348] In some embodiments, the first DC electrode 9473 is located on one side of the first RF electrode 9471, and the second RF electrode 9472 is located on the other side of the first RF electrode 9471, thus the first DC electrode 9473, the first RF electrode 9471, and the second RF electrode 9472 are arranged sequentially. Alternatively, the first RF electrode 9471 is located on one side of the second RF electrode 9472, and the second DC electrode 9474 is located on the other side of the second RF electrode 9472, thus the first DC electrode 9473, the first RF electrode 9471, the second RF electrode 9472, and the second DC electrode 9474 are arranged sequentially on the surface of the laser chip 900. Correspondingly, the sixth signal pad 4243, the second signal pad 4232, the first signal pad 4231, and the fifth signal pad 4241 are arranged sequentially on the surface of the substrate 420. A linear arrangement occupies a small area, which is beneficial for distributing multiple electro-absorption modulation regions, thereby meeting the differential drive mode requirements of multiple electro-absorption modulation regions.

[0349] In some embodiments, a first ground pad 4235 is provided on one side of the third signal pad 4233, and a second ground pad 4236 is provided on one side of the fourth signal pad 4234. The third signal pad 4233 and the fourth signal pad 4234 are located between the first ground pad 4235 and the second ground pad 4236, thereby forming a GSSG differential drive mode, which is beneficial to improving the chip's noise immunity and reducing power consumption.

[0350] In some embodiments, a third differential drive signal line 4223 and a fourth differential drive signal line 4224 are formed on the surface of the substrate 420, and the two are electrically connected to the second electroabsorption modulation region 950 to input differential drive modulation signals to the second electroabsorption modulation region 950.

[0351] In some embodiments, one end of the third differential drive signal line 4223 is electrically connected to the circuit board 300, and the other end is electrically connected to the first radio frequency electrode of the second electroabsorption modulation region 950, so as to input the first differential drive modulation signal into the second electroabsorption modulation region 950.

[0352] In some embodiments, one end of the fourth differential drive signal line 4224 is electrically connected to the circuit board 300, and the other end is electrically connected to the second radio frequency electrode of the second electroabsorption modulation region 950, so as to input the second differential drive modulation signal into the second electroabsorption modulation region 950.

[0353] In some embodiments, a fifth differential drive signal line 4225 and a sixth differential drive signal line 4226 are formed on the surface of the substrate 420. Both are electrically connected to the third electroabsorption modulation region 960 to input differential drive modulation signals to the third electroabsorption modulation region 960.

[0354] In some embodiments, one end of the fifth differential drive signal line 4225 is electrically connected to the circuit board 300, and the other end is electrically connected to the first radio frequency electrode of the third electroabsorption modulation region 960, so as to input the first differential drive modulation signal into the third electroabsorption modulation region 960.

[0355] In some embodiments, one end of the sixth differential drive signal line 4226 is electrically connected to the circuit board 300, and the other end is electrically connected to the second radio frequency electrode of the third electroabsorption modulation region 960, so as to input the second differential drive modulation signal into the third electroabsorption modulation region 960.

[0356] In some embodiments, a seventh differential drive signal line 4227 and an eighth differential drive signal line 4228 are formed on the surface of the substrate 420. Both are electrically connected to the fourth electroabsorption modulation region 970 to input differential drive modulation signals to the fourth electroabsorption modulation region 970.

[0357] In some embodiments, one end of the seventh differential drive signal line 4227 is electrically connected to the circuit board 300, and the other end is electrically connected to the first radio frequency electrode of the fourth electroabsorption modulation region 970, so as to input the first differential drive modulation signal to the fourth electroabsorption modulation region 970.

[0358] In some embodiments, one end of the eighth differential drive signal line 4228 is electrically connected to the circuit board 300, and the other end is electrically connected to the second radio frequency electrode of the fourth electroabsorption modulation region 970, so as to input the second differential drive modulation signal to the fourth electroabsorption modulation region 970.

[0359] In some embodiments, the first differential drive signal line 4221 and the second differential drive signal line 4222 are located on the first side of the laser chip 900, and the third differential drive signal line 4223 and the fourth differential drive signal line 4224 are also located on the first side of the laser chip 900. Compared to the first differential drive signal line 4221 and the second differential drive signal line 4222, the third differential drive signal line 4223 and the fourth differential drive signal line 4224 have longer wiring lengths to rationally deploy the signal lines and avoid conflicts.

[0360] In some embodiments, the fifth differential drive signal line 4225 and the sixth differential drive signal line 4226 are located on the second side of the laser chip 900, and the seventh differential drive signal line 4227 and the eighth differential drive signal line 4228 are also located on the second side of the laser chip 900. Similarly, compared to the seventh differential drive signal line 4227 and the eighth differential drive signal line 4228, the fifth differential drive signal line 4225 and the sixth differential drive signal line 4226 have longer wiring lengths to rationally deploy the signal lines and avoid conflicts.

[0361] In some embodiments, a first bias electrode 918 and a second bias electrode 919 are formed on the surface of the laser chip 900. One end of the first bias electrode 918 is electrically connected to the circuit board 300, and the other end is electrically connected to the P-type electrode 916. One end of the second bias electrode 919 is electrically connected to the circuit board 300, and the other end is electrically connected to the N-type electrode 917, thereby inputting a bias current to the light-emitting region 910.

[0362] In some embodiments, the substrate 420 has a first bias pad 4271 and a second bias pad 4272 on its surface. One end of the first bias pad 4271 is electrically connected to the circuit board 300, and the other end is electrically connected to the first bias electrode 918 via wire bonding. One end of the second bias pad 4272 is electrically connected to the circuit board 300, and the other end is electrically connected to the second bias electrode 919 via wire bonding.

[0363] Figure 23 is a second surface structure diagram of a laser component according to some embodiments of the present disclosure. As shown in Figure 23, in some embodiments, differential drive signal lines corresponding to four electro-absorption modulation regions are arranged on the surface of the substrate 420.

[0364] In some embodiments, taking the first electroabsorption modulation region 940 as an example, the first DC electrode 9473 and the first RF electrode 9471 are electrically connected through a first connecting resistor 9491. The first RF electrode 9471 is electrically connected to the first electrode portion 945, thereby realizing the electrical connection between the first DC electrode 9473 and the first electrode portion 945. The first connecting resistor 9491 can be an on-chip integrated resistor.

[0365] In some embodiments, the second DC electrode 9474 and the second RF electrode 9472 are electrically connected via a second connection resistor 9492. The second RF electrode 9472 is electrically connected to the second electrode portion 946, thereby realizing the electrical connection between the second DC electrode 9474 and the second electrode portion 946.

[0366] In some embodiments, a fifth signal pad 4241 and a sixth signal pad 4243 are formed on the surface of the substrate 420 adjacent to the laser chip 900. The fifth signal pad 4241 and the sixth signal pad 4243 are located on the sides of the first differential drive signal line 4221 and the second differential drive signal line 4222, respectively.

[0367] In some embodiments, a seventh signal pad 4242 and an eighth signal pad 4244 are formed on the surface of the substrate 420 adjacent to the circuit board 300.

[0368] In some embodiments, a first differential bias signal line 4251 is connected between the fifth signal pad 4241 and the seventh signal pad 4242. The fifth signal pad 4241 is used to electrically connect to the first DC electrode 9473, and the seventh signal pad 4242 is used to electrically connect to the circuit board 300. One end of the first differential bias signal line 4251 is electrically connected to the circuit board 300, and the other end is wire-connected to the first DC electrode 9473. The first DC electrode 9473 is electrically connected to the first electrode portion 945, thereby inputting a first differential reverse bias voltage to the first electroabsorption modulation region 940.

[0369] In some embodiments, a second differential bias signal line 4252 is connected between the sixth signal pad 4243 and the eighth signal pad 4244. The sixth signal pad 4243 is electrically connected to the second DC electrode 9474, and the eighth signal pad 4244 is electrically connected to the circuit board 300. One end of the second differential bias signal line 4252 is electrically connected to the circuit board 300, and the other end is wire-connected to the second DC electrode 9474. The second DC electrode 9474 is electrically connected to the second electrode portion 946, thereby inputting a second differential reverse bias voltage to the first electroabsorption modulation region 940.

[0370] In some embodiments, the first differential bias signal line 4251 and the second differential bias signal line 4252 are respectively located inside the substrate 420 to avoid crosstalk between the differential drive signal and the differential reverse bias electrode. At the same time, more space is reserved for the differential drive signal lines to be arranged on the surface of the substrate 420, so that the first differential drive signal lines and the second differential drive signal lines corresponding to multiple electroabsorption modulation regions are all distributed on the surface of the substrate 420, optimizing the spatial layout and ensuring signal transmission quality.

[0371] In some embodiments, the fifth signal pad 4241 has a metal via hole inside the substrate 420, and is then electrically connected to the seventh signal pad 4242 through internal traces in the substrate 420, thereby embedding the first differential bias signal line 4251 inside the substrate 420. In some embodiments, the sixth signal pad 4243 has a metal via hole inside the substrate 420, and is then electrically connected to the eighth signal pad 4244 through internal traces in the substrate 420, thereby embedding the second differential bias signal line 4252 inside the substrate 420.

[0372] In some embodiments, with reference to the first electroabsorption modulation region 940, a third differential bias signal line 4253 and a fourth differential bias signal line 4254 are formed inside the substrate 420 to input a differential reverse bias voltage to the second electroabsorption modulation region 950.

[0373] In some embodiments, with reference to the first electroabsorption modulation region 940, a fifth differential bias signal line 4255 and a sixth differential bias signal line 4256 are formed inside the substrate 420 to input a differential reverse bias voltage to the third electroabsorption modulation region 960.

[0374] In some embodiments, with reference to the first electroabsorption modulation region 940, a seventh differential bias signal line 4257 and an eighth differential bias signal line 4258 are formed inside the substrate 420 to input a differential reverse bias voltage to the fourth electroabsorption modulation region 970.

[0375] Figure 24 is a schematic diagram of a capacitor arrangement according to some embodiments of the present disclosure, and Figure 25 is a schematic diagram of a laser chip circuit according to some embodiments of the present disclosure. As shown in Figures 24 and 25, in some embodiments, an integrated capacitor design is adopted, and a coupling capacitor can be directly added to the output terminal of the electro-absorption modulation region to achieve DC isolation and matched filtering.

[0376] In some embodiments, taking the first electroabsorption modulation region 940 as an example, the surface of the substrate 420 near the laser chip 900 is provided with a sixth signal pad 4243, a second signal pad 4232, a first signal pad 4231 and a fifth signal pad 4241, which are respectively electrically connected to the second DC electrode 9474, the second RF electrode 9472, the first RF electrode 9471 and the first DC electrode 9473.

[0377] In some embodiments, a coupling capacitor 426 is connected in series between the sixth signal pad 4243 and the fifth signal pad 4241 to achieve effective isolation between the DC positive and negative terminals. The coupling capacitor 426 has the characteristic of passing AC and blocking DC. The coupling capacitor 426 can achieve DC isolation and matched filtering.

[0378] In some embodiments, the coupling capacitor 426 is disposed in the inner layer of the substrate 420. The sixth signal pad 4243 and the fifth signal pad 4241 respectively drill metal vias into the inner layer of the substrate 420, thereby connecting the coupling capacitor 426 in series between them.

[0379] As shown in Figure 25, in some embodiments, capacitor C4 in the circuit diagram is a coupling capacitor 426. Black dot 1 in the circuit diagram represents the signal access point of the second DC electrode 9474, and black dot 4 represents the signal access point of the first DC electrode 9473. Black dot 2 represents the signal access point of the second RF electrode 9472, and black dot 3 represents the signal access point of the first RF electrode 9471.

[0380] In some embodiments, a first differential reverse bias voltage signal is applied at the signal access point of the first DC electrode 9473. This signal is split into components DC1+ and DC2+ at this access point. Component DC1+ flows into the first electrode section via wire L5 and resistor R6. Wire L5 is the connection between the fifth signal pad 4241 and the first DC electrode 9473, and resistor R6 is the first connection resistor 9491 between the first DC electrode 9473 and the first RF electrode 9471. Component DC2+ flows upward into the coupling capacitor 426, where it is open-circuited, thus achieving DC isolation.

[0381] In some embodiments, a second differential reverse bias voltage signal is applied at the signal access point of the second DC electrode 9474. This second differential reverse bias voltage signal is split into components DC1- and DC2- at this access point. Component DC1- flows into the second electrode section via wire L6 and resistor R7. Wire L6 is the connection between the sixth signal pad 4243 and the second DC electrode 9474, and resistor R7 is the second connection resistor 9492 between the second DC electrode 9474 and the second RF electrode 9472. Component DC2- flows downwards into the coupling capacitor 426, where it is open-circuited, thus achieving DC isolation.

[0382] In some embodiments, a second differential modulation drive signal is connected at the signal access point of the second radio frequency electrode 9472. The second differential modulation drive signal is split into components RF1- and RF2-. RF1- flows downward into the second electrode portion 946, and RF2- flows to the right into the coupling capacitor 426.

[0383] In some embodiments, a first differential drive modulation signal is introduced at the signal access point of the first RF electrode 9471. The first differential drive modulation signal is also split into components RF1+ and RF2+, where RF1+ flows upward into the first electrode portion 945, and RF2+ flows to the right into the coupling capacitor 426. The component RF2- of the second differential modulation drive signal and the component RF2+ of the first differential modulation drive signal merge within the coupling capacitor 426, canceling each other out, thereby achieving filtering and improving the chip's noise immunity.

[0384] In some embodiments, the laser chip 900 can be a single-channel laser chip or an array-emitting laser chip. The following embodiments use a single-channel laser chip 900 as an example for illustrative purposes.

[0385] Figure 26 is a schematic diagram of a laser chip according to some embodiments of the present disclosure. As shown in Figure 26, in some embodiments, the laser chip 900 can be an EML laser chip.

[0386] In some embodiments, the laser chip 900 may include a light-emitting region 910. The light-emitting region 910 is configured to emit light that does not carry a signal.

[0387] In some embodiments, the laser chip 900 may include an electro-absorption modulation region 920. The electro-absorption modulation region 920 is configured to modulate the light emitted from the light-emitting region 910 to generate an optical signal.

[0388] In some embodiments, the light-emitting region 910 and the electro-absorption modulation region 920 are arranged along the light field transmission direction.

[0389] Figure 27 is a structural diagram of a laser chip according to some embodiments of the present disclosure. As shown in Figure 27, in some embodiments, the laser chip 900 includes a substrate 930a. A light-emitting region 910 and an electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a. The light-emitting region 910 and the electro-absorption modulation region 920 are laterally connected. The electro-absorption modulation region 920 is located in the direction of the light emission field of the light-emitting region 910.

[0390] In some embodiments, the light-emitting region 910 emits light without carrying a signal, and the electro-absorption modulation region 920 modulates the light emitted by the light-emitting region 910 to generate an optical signal, thereby the laser chip 900 outputs an optical signal.

[0391] In some embodiments, a bias current is provided to the light-emitting region 910, and the light-emitting region 910 emits light under the action of the bias current.

[0392] In some embodiments, the light-emitting region 910 may include a first N-InP layer 911a. The first N-InP layer 911a is located above the substrate 930a. The first N-InP layer 911a is an N-type doped InP layer. The first N-InP layer 911a primarily outputs N-type carriers.

[0393] In some embodiments, the light-emitting region 910 may include a first quantum well layer 912. The first quantum well layer 912 is located above the first N-InP layer 911a. The first quantum well layer 912 is the active region of the light-emitting region 910. The first quantum well layer 912 is configured to generate photons by recombination of P-type carriers and N-type carriers. The N-type carriers originate from the first N-InP layer 911a.

[0394] In some embodiments, the light-emitting region 910 may include a grating layer 913. The grating layer 913 is located above the first quantum well layer 912.

[0395] In some embodiments, the light-emitting region 910 may include a P-InP layer 940a. The P-InP layer 940a is located above the grating layer 913. The P-InP layer 940a is a P-type doped InP layer. The P-InP layer 940a primarily outputs P-type carriers. The P-InP layer 940a inputs P-type carriers to the first quantum well layer 912.

[0396] In some embodiments, within the first quantum well layer 912, stimulated emission causes discrete P-type and N-type carrier pairs to recombine and generate photons, thereby converting injected carriers into photons. These photons are reflected by the resonant cavity or distributed feedback grating to form positive feedback, generating laser light. By changing the current injected into the grating layer 913, the effective refractive index of the grating layer 913 can be altered, thereby changing the laser resonant lasing wavelength and achieving output at a specific wavelength. The light output from the first quantum well layer 912 does not carry a signal.

[0397] In some embodiments, the first N-InP layer 911a is larger in size to support the first quantum well layer 912, the grating layer 913 and the P-InP layer.

[0398] In some embodiments, a reverse bias voltage and a modulation current signal are provided to the electroabsorption modulation region 920. Under the action of the reverse bias voltage, the intensity of the light emitted by the light-emitting region 910 changes with the modulation current signal, thereby modulating the intensity and generating an optical signal carrying information.

[0399] In some embodiments, the electroabsorption modulation region 920 may include a second N-InP layer 921. The second N-InP layer 921 is located above the substrate 930a. The second N-InP layer 921 is an N-type doped InP layer. The second N-InP layer 921 primarily outputs N-type carriers.

[0400] In some embodiments, the electroabsorption modulation region 920 may include a second quantum well layer 922. The second quantum well layer 922 is located above the second N-InP layer 921. The second quantum well layer 922 is the active region of the electroabsorption modulation region 920.

[0401] In some embodiments, the electroabsorption modulation region 920 may include a P-InP layer 940a. The P-InP layer 940a is located above the second quantum well layer 922. The P-InP layer 940a is a P-type doped InP layer. The P-InP layer 940a primarily outputs P-type carriers. The P-InP layer 940a inputs P-type carriers to the second quantum well layer 922, and the second N-InP layer 921 inputs N-type carriers to the second quantum well layer 922, thereby inputting a signal to the electroabsorption modulation region 920.

[0402] In some embodiments, the light-emitting region 910 and the electro-absorption modulation region 920 share a P-InP layer 940a. That is, the P-InP layer 940a covers the corresponding regions of the light-emitting region 910 and the electro-absorption modulation region 920. The P-InP layer 940a extends from the corresponding region of the light-emitting region 910 to the corresponding region of the electro-absorption modulation region 920. The P-InP layer 940a extends from the surface of the grating layer 913 to the surface of the second quantum well layer 922. In some embodiments, the light-emitting region 910 and the electro-absorption modulation region 920 may not share the P-InP layer 940a; this is not a limitation.

[0403] In some embodiments, the second N-InP layer 921 is larger in size to support the second quantum well layer 922 and the P-InP layer 940a.

[0404] In some embodiments, the electroabsorption modulation region 920 may include a first electrode portion 923. Exemplarily, the first electrode portion 923 is a P-type electrode.

[0405] In some embodiments, the electroabsorption modulation region 920 may include a second electrode portion 924. Exemplarily, the second electrode portion 924 is an N-type electrode. The second electrode portion 924 and the first electrode portion 923 are coplanar electrodes, and both are located on the upper surface of the substrate 420.

[0406] In some embodiments, the first electrode portion 923 is located on the surface of the P-InP layer 940a corresponding to the electroabsorption modulation region 920, and the second electrode portion 924 is located on the surface of the second N-InP layer 921. The width of the second N-InP layer 921 is greater than the width of the second quantum well layer 922, or the width of the second N-InP layer 921 is greater than the width of the P-InP layer 940a, to provide space for the second electrode portion 924.

[0407] In some embodiments, a reverse bias voltage and a driving modulation signal are provided to the electroabsorption modulation region 920. When the electroabsorption modulation region 920 is in operation, the light entering the second quantum well layer 922 is modulated by the driving modulation signal based on the electro-optic modulation effect of the second quantum well layer 922, generating an optical signal carrying information.

[0408] In some embodiments, as the integration density of optical modules increases, it is necessary to further reduce the power consumption of the laser chip 900 to meet overall power consumption requirements. The laser chip 900 employs a differential drive mode to effectively reduce power consumption. The differential drive modulation signals enter the electroabsorption modulation region 920 respectively; these two differential signals have the same amplitude and frequency but opposite phase. Compared with single-ended drive chips, differential drive has advantages such as stronger noise immunity, longer transmission distance, and lower power consumption.

[0409] In some embodiments, when the light-emitting region 910 and the electro-absorption modulation region 920 share an N-InP layer, the driving modulation signal accessed from the N-InP layer to the electro-absorption modulation region will be interfered with by the light-emitting region 910, making differential driving difficult.

[0410] In some embodiments, the laser chip 900 may include an electrically isolated region 951. The electrically isolated region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, and the electrically isolated region 951 provides N-plane electrical isolation between the light-emitting region 910 and the electro-absorption modulation region 920.

[0411] In some embodiments, the electrically isolated region 951 is a high-resistivity region, preventing charge carriers from entering the other party's working region through the electrically isolated region 951. This avoids interference from the light-emitting region 910 on the driving modulation signal accessed from the second N-InP layer 921, thus ensuring the quality of the modulation signal. At the same time, it also avoids interference from the electrically absorbed modulation region 920 on the bias current signal accessed from the first N-InP layer 911a, thus ensuring the light output quality of the light-emitting region 910.

[0412] In some embodiments, the electrical isolation region 951 can be achieved by means of ion implantation or diffusion, which transforms the N-type semiconductor region between the first N-InP layer 911a and the second N-InP layer 921 into a high-resistivity region, thereby achieving electrical isolation.

[0413] In some embodiments, the laser chip 900 may include a connecting waveguide region 952. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922. The connecting waveguide region 952 connects the first quantum well layer 912 and the second quantum well layer 922. Light output from the first quantum well layer 912 is transmitted through the connecting waveguide region 952 to the second quantum well layer 922 for signal modulation.

[0414] In some embodiments, ion implantation is performed downwards at the interface between the first quantum well layer 912 and the second quantum well layer 922. The ion implantation region is bombarded by the ion beam, forming deep-level defects and reducing conductivity, thus forming an electrically isolated region 951. The electrically isolated region 951 is a high-resistivity region, preventing charge carriers from entering the other party's working region through the electrically isolated region 951, thereby avoiding interference from the other party.

[0415] In some embodiments, after obtaining the electrically isolated region 951, an electrically isolated region of a predetermined thickness is etched to form a connecting waveguide region 952 on the surface of the electrically isolated region. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connecting waveguide region 952 establishes an optical connection between the first quantum well layer 912 and the second quantum well layer 922. Exemplarily, the etching predetermined thickness should ensure that the thickness of the connecting waveguide region 952 matches the thickness of the first quantum well layer 912 and the second quantum well layer 922.

[0416] Figure 28 is a second structural diagram of a laser chip according to some embodiments of the present disclosure. As shown in Figure 28, in some embodiments, the laser chip 900 includes a substrate 930a. A light-emitting region 910 and an electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a.

[0417] In some embodiments, the laser chip 900 employs a differential drive mode to effectively reduce power consumption.

[0418] In some embodiments, the electroabsorption modulation region 920 may include a first radio frequency electrode 925. The first radio frequency electrode 925 is electrically connected to the first electrode portion 923 to input a first differential drive modulation signal to the electroabsorption modulation region 920.

[0419] In some embodiments, the electroabsorption modulation region 920 may include a first DC electrode 926. The first DC electrode 926 is electrically connected to the first electrode portion 923 to input a first differential reverse bias voltage to the electroabsorption modulation region 920.

[0420] In some embodiments, the electroabsorption modulation region 920 may include a second radio frequency electrode 927. The first radio frequency electrode 925 and the second radio frequency electrode 927 constitute a differential drive electrode. The second radio frequency electrode 927 is electrically connected to the second electrode portion 924 to input a second differential drive modulation signal to the electroabsorption modulation region 920.

[0421] In some embodiments, the electroabsorption modulation region 920 may include a second DC electrode 928. The first DC electrode 926 and the second DC electrode 928 constitute a differential reverse bias electrode. The second DC electrode 928 is electrically connected to the second electrode portion 924 to input a second differential reverse bias voltage to the electroabsorption modulation region 920.

[0422] In some embodiments, the first radio frequency electrode 925 and the first DC electrode 926 are located on opposite sides of the second N-InP layer 921. The second radio frequency electrode 927 and the second DC electrode 928 are located on opposite sides of the first N-InP layer 911a.

[0423] In some embodiments, the first radio frequency electrode 925, the first DC electrode 926, the second radio frequency electrode 927, and the second DC electrode 928 are respectively insulated from the substrate 930a.

[0424] In some embodiments, a first support portion 931, a second support portion 932, a third support portion 933, and a fourth support portion 934 are formed on the surface of the substrate 930a. The first support portion 931, the second support portion 932, the third support portion 933, and the fourth support portion 934 can each be a mesa structure composed of SiO2 and have a certain thickness.

[0425] In some embodiments, the first support portion 931 and the second support portion 932 are located on both sides of the first N-InP layer 911a. The third support portion 933 and the fourth support portion 934 are located on both sides of the second N-InP layer 921.

[0426] In some embodiments, a first radio frequency electrode 925 is supported on the surface of the first support portion 931. The first radio frequency electrode 925 may be a circular electrode, supported by the first support portion 931 to achieve an insulated connection with the substrate 930a. The first support portion 931 can achieve insulation between the first radio frequency electrode 925 and the substrate 930a.

[0427] In some embodiments, a first DC electrode 926 is supported on the surface of the second support portion 932. The first DC electrode 926 may be a circular electrode, supported by the second support portion 932 to achieve an insulated connection with the substrate 930a. The second support portion 932 can achieve insulation between the first DC electrode 926 and the substrate 930a.

[0428] In some embodiments, a second radio frequency electrode 927 is supported on the surface of the third support portion 933. The second radio frequency electrode 927 may be a circular electrode, supported by the third support portion 933 to achieve an insulated connection with the substrate 930a. The third support portion 933 can achieve insulation between the second radio frequency electrode 927 and the substrate 930a.

[0429] In some embodiments, a second DC electrode 928 is supported on the surface of the fourth support portion 934. The second DC electrode 928 may be a circular electrode, supported by the fourth support portion 934 to achieve an insulated connection with the substrate 930a. The fourth support portion 934 can achieve insulation between the second DC electrode 928 and the substrate 930a.

[0430] In some embodiments, the first support portion 931 and the second support portion 932 are respectively located on both sides of the second N-InP layer 921. The third support portion 933 and the fourth support portion 934 are respectively located on both sides of the first N-InP layer 911a.

[0431] In some embodiments, the first radio frequency electrode 925 is electrically connected to the first electrode portion 923 to input a first differential drive modulation signal to the electroabsorption modulation region 920; the second radio frequency electrode 927 is electrically connected to the second electrode portion 924 to input a second differential drive modulation signal to the electroabsorption modulation region 920. The first differential drive modulation signal and the second differential drive modulation signal have the same amplitude and frequency, but opposite phase.

[0432] In some embodiments, the first DC electrode 926 is electrically connected to the first electrode portion 923 to input a first differential reverse bias voltage to the electroabsorption modulation region 920; the second DC electrode 928 is electrically connected to the second electrode portion 924 to input a second differential reverse bias voltage to the electroabsorption modulation region 920. Similarly, the first differential reverse bias voltage and the second differential reverse bias voltage have the same amplitude and frequency, but opposite phase.

[0433] In some embodiments, when the electroabsorption modulation region 920 is operational, the first electrode portion 923 and the second electrode portion 924 are simultaneously applied with a first differential driving modulation signal and a second differential driving modulation signal with opposite phases, forming a differential driving mode. Through the electro-optic modulation effect of the second quantum well layer 922, the light entering the second quantum well layer 922 is modulated by the differential driving modulation signal, generating an optical signal carrying information. Using a coplanar electrode differential driving method for signal modulation reduces power consumption.

[0434] In some embodiments, the substrate 420 carries the laser chip 900. The surface of the substrate 420 is covered with circuit patterns to establish electrical connections with the circuit board 300 and the laser chip 900, respectively, thereby transmitting signals to the laser chip 900.

[0435] In some embodiments, a bias current source is provided on the surface of the circuit board 300. The bias current source is electrically connected to the substrate 420, which is in turn electrically connected to the laser chip 900, thereby inputting the bias current into the light-emitting area 910 of the laser chip 900, so that the light-emitting area 910 emits light.

[0436] In some embodiments, a bias circuit is provided on the surface of the circuit board 300. The bias circuit has a first differential output terminal and a second differential output terminal. The first differential output terminal of the bias circuit is electrically connected to the substrate 420, and the first DC electrode 926 is electrically connected to the substrate 420. Thus, the first differential output terminal of the bias circuit is electrically connected to the first DC electrode 926, thereby transmitting the first differential reverse bias voltage output by the bias circuit to the first DC electrode 926. Then, it is input to the electroabsorption modulation region 920 via the first electrode portion 923.

[0437] In some embodiments, the second differential output terminal of the bias circuit is electrically connected to the substrate 420, and the second DC electrode 928 is electrically connected to the substrate 420. The second differential output terminal of the bias circuit is then electrically connected to the second DC electrode 928, thereby transmitting the second differential reverse bias voltage output by the bias circuit to the second DC electrode 928. It is then input to the electroabsorption modulation region 920 via the second electrode portion 924.

[0438] In some embodiments, a driver chip is provided on the surface of the circuit board 300. The driver chip has a first differential output terminal and a second differential output terminal. The first differential output terminal of the driver chip is electrically connected to the substrate 420, and the first radio frequency electrode 925 is electrically connected to the substrate 420. Thus, the first differential output terminal of the driver chip is electrically connected to the first radio frequency electrode 925, thereby transmitting the first differential drive modulation signal output by the driver chip to the first radio frequency electrode 925. Then, it is input to the electroabsorption modulation region 920 via the first electrode portion 923.

[0439] In some embodiments, the second differential output terminal of the driver chip is electrically connected to the substrate 420, and the second radio frequency electrode 962 is electrically connected to the substrate 420. The second differential output terminal of the driver chip is then electrically connected to the second radio frequency electrode 962, thereby transmitting the second differential drive modulation signal output by the driver chip to the second radio frequency electrode 962. The signal is then input to the electroabsorption modulation region 920 via the second electrode portion 924.

[0440] Figure 29 is a structural diagram of a laser chip according to some embodiments of the present disclosure. As shown in Figure 29, in some embodiments, the laser chip 900 includes a substrate 930a. The light-emitting region 910 and the electro-absorption modulation region 920 are respectively disposed on the surface of the substrate 930a.

[0441] In some embodiments, the first radio frequency electrode 925 and the first DC electrode 926 are electrically connected to the first electrode portion 923, so as to transmit the first differential drive modulation signal and the first reverse bias voltage signal to the electroabsorption modulation region 920 via the first electrode portion 923, respectively.

[0442] In some embodiments, the second radio frequency electrode 927 and the second DC electrode 928 are electrically connected to the second electrode portion 924, so as to transmit the second differential drive modulation signal and the second reverse bias voltage signal to the electroabsorption modulation region 920 via the second electrode portion 924, respectively.

[0443] In some embodiments, the first electrode portion 923 and the second electrode portion 924 are coplanar electrodes, both of which are disposed facing the upper surface of the substrate 420.

[0444] In some embodiments, the first radio frequency electrode 925, the first DC electrode 926, the second radio frequency electrode 927, and the second DC electrode 928 are respectively disposed facing the upper surface of the substrate 420.

[0445] In some embodiments, the first support portion 931 and the second support portion 932 are respectively located on both sides of the second N-InP layer 921. The third support portion 933 and the fourth support portion 934 are respectively located on both sides of the first N-InP layer 911a. Then, the first radio frequency electrode 925 and the first DC electrode 926 are respectively located on both sides of the second N-InP layer 921, and the second radio frequency electrode 927 and the second DC electrode 928 are respectively located on both sides of the first N-InP layer 911a.

[0446] In some embodiments, the first electrode portion 923 is located above the second N-InP layer 921, and the first radio frequency electrode 925 and the first DC electrode 926 are located on both sides of the first electrode portion 923.

[0447] In some embodiments, the first support portion 931 and the third support portion 933 are located on one side of the P-InP layer 940a, and the first radio frequency electrode 925 and the second radio frequency electrode 927 are respectively located on one side of the P-InP layer 940a, so that the differential modulation drive signal can be accessed from the substrate 420 carrying the laser chip at the same distance, thereby reducing parasitic inductance and capacitance.

[0448] In some embodiments, the second support portion 932 and the fourth support portion 934 are located on the other side of the P-InP layer 940a. Therefore, the first DC electrode 926 and the second DC electrode 928 are located on the other side of the P-InP layer 940a, away from the first RF electrode 925 and the second RF electrode 927, thereby reducing parasitic capacitance. Simultaneously, the DC signal on the substrate 420 carrying the laser chip can be accessed from the other side of the laser chip via the first DC electrode 926 and the second DC electrode 928, without needing to share the first RF electrode 925 or the second RF electrode 927, reducing wire bonding difficulty and providing flexibility in the arrangement of the substrate 420.

[0449] In some embodiments, the second radio frequency electrode 927 and the second electrode portion 924 are located on opposite sides of the P-InP layer 940a, and the second DC electrode 928 and the second electrode portion 924 are located on the same side of the P-InP layer 940a.

[0450] In some embodiments, the second electrode portion 924 is located on the surface of the second N-InP layer 921, and the second radio frequency electrode 927 and the second DC electrode 928 are located on opposite sides of the first N-InP layer 911a. In this case, the second radio frequency electrode 927 is located on the diagonal side of the second electrode portion 924, and the second DC electrode 928 is located on the straight side of the second electrode portion 924.

[0451] In some embodiments, the first radio frequency electrode 925 and the first DC electrode 926 are electrically connected to the first electrode portion 923, respectively. Since the first radio frequency electrode 925 and the first DC electrode 926 are located on opposite sides of the first electrode portion 923, a first electrical connection bridge 971 can be connected between the first radio frequency electrode 925 and the first DC electrode 926. One end of the first electrical connection bridge 971 is electrically connected to the first radio frequency electrode 925, and the other end is electrically connected to the first DC electrode 926. The first electrical connection bridge 971 is also electrically connected to the first electrode portion 923, so that the first radio frequency electrode 925 and the first DC electrode 926 are respectively electrically connected to the first electrode portion 923. The first support portion 931 and the second support portion 932 act as bridge piers, providing support for the first electrical connection bridge 971.

[0452] In some embodiments, the second radio frequency electrode 927 and the second DC electrode 928 are electrically connected to the second electrode portion 924, respectively. Since the second radio frequency electrode 927 and the second electrode portion 924 are located on opposite sides of the P-InP layer 940a, and the second DC electrode 928 and the second electrode portion 924 are located on the same side of the P-InP layer 940a, the electrical connection between the second radio frequency electrode 927 and the second electrode portion 924 requires a transfer. Therefore, a transfer electrode portion 9341 is provided on the surface of the fourth support portion 934, and the transfer electrode portion 9341 is electrically connected to the second DC electrode 928 located on the fourth support portion 934.

[0453] In some embodiments, a second electrical connection bridge 972 connects the second electrode portion 924 and the transition electrode portion 9341, and the transition electrode portion 9341 is electrically connected to the second DC electrode 928, thereby establishing an electrical connection between the second DC electrode 928 and the second electrode portion 924, realizing the electrical connection between the two. The second N-InP layer 921 and the fourth support portion 934 act as piers, providing support for the second electrical connection bridge 972.

[0454] In some embodiments, a second electrical connection bridge 972 connects the second electrode portion 924 and the transition electrode portion 9341, and a third electrical connection bridge 973 connects the transition electrode portion 9341 and the second radio frequency electrode 927, thereby establishing an electrical connection between the second radio frequency electrode 927 and the second electrode portion 924, realizing their electrical connection. The third support portion 933 and the fourth support portion 934 act as bridge piers, providing support for the third electrical connection bridge 973.

[0455] In some embodiments, the first electrical connection bridge 971 spans the electroabsorption modulation region 920 and has a relatively long length. A P-type ohmic contact layer 929 is provided between the first electrode portion 923 and the P-InP layer to support the first electrical connection bridge 971 and reduce the risk of collapse caused by the long length of the first electrical connection bridge 971.

[0456] In some embodiments, the third electrical connection bridge 973 spans the light-emitting area 920 and is also relatively long. The third electrical connection bridge 973 rests above the waveguide of the light-emitting area 920 and is isolated and supported by the thick dielectric support portion 974, thereby reducing the risk of collapse caused by the excessive length of the third electrical connection bridge 973.

[0457] In some embodiments, the first electrical connection bridge 971, the second electrical connection bridge 972, and the third electrical connection bridge 973 may each be an air bridge. Air bridges utilize air, which has a low dielectric constant, as the dielectric, reducing parasitic capacitance. Due to the low dielectric constant of air, signal transmission speed in air bridges is relatively fast, and losses are low. The structural design of air bridges can optimize the signal transmission path, reduce signal reflection and scattering during transmission, thereby improving signal transmission efficiency and quality.

[0458] In some embodiments, the impedance of the electro-absorption modulation region 920 is greater than the impedance of the differential signal transmission line on the surface of the substrate 420. To achieve impedance matching between the electro-absorption modulation region 920 and the differential signal transmission line, a matching resistor is connected in parallel with the electro-absorption modulation region 920 to reduce its impedance, thereby achieving impedance matching. Exemplarily, the matching resistor has a preset impedance, such as 50 ohms.

[0459] In some embodiments, a matching resistor may be disposed on the surface of substrate 420 and connected in parallel with electroabsorption modulation region 920.

[0460] In some embodiments, the matching resistor can be integrated on the surface of the laser chip 900. A first matching resistor 981a and a second matching resistor 982a are formed on the surfaces of the second support portion 932 and the fourth support portion 934, respectively, to achieve on-chip integration of the matching resistor, eliminating the need to set the matching resistor on the surface of the substrate 420, thereby reducing the substrate size.

[0461] In some embodiments, the first matching resistor 981a is connected in parallel with the electroabsorption modulation region 920, and the second matching resistor 982a is connected in parallel with the electroabsorption modulation region 920 to reduce the impedance of the electroabsorption modulation region 920 and achieve impedance matching between the electroabsorption modulation region 920 and the differential signal transmission line on the surface of the substrate 420.

[0462] Based on the laser chip provided in the above embodiments, this disclosure provides a method for fabricating a laser chip using a deposition method. Figure 30 is a schematic flowchart of a laser chip fabrication method according to some embodiments of this disclosure. As shown in Figure 30, this disclosure provides a method for fabricating a laser chip, including:

[0463] S100: An N-InP layer is grown along the surface of the substrate, and a first quantum well layer and a second quantum well layer are grown together along the surface of the N-InP layer. A grating layer is formed on the surface of the first quantum well layer.

[0464] In some embodiments, an N-InP layer is grown along the substrate surface, and a first quantum well layer 912 and a second quantum well layer 922 are grown together along the surface of the N-InP layer. A grating layer 913 is formed on the surface of the first quantum well layer 912. The first quantum well layer 912 and the second quantum well layer 922 are the active regions of the light-emitting region 910 and the electro-absorption modulation region 920, respectively. Light emission from the light-emitting region 910 occurs within the first quantum well layer 912, and signal modulation from the electro-absorption modulation region 920 occurs within the second quantum well layer 922.

[0465] In some embodiments, when the light-emitting region 910 and the electro-absorption modulation region 920 share an N-InP layer, the drive modulation signal accessed from the N-InP layer to the electro-absorption modulation region will be interfered with by the light-emitting region 9410, making differential driving difficult.

[0466] In some embodiments, the laser chip 900 may include an electrically isolated region 951. The electrically isolated region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, and the electrically isolated region 951 provides N-plane electrical isolation between the light-emitting region 910 and the electro-absorption modulation region 920.

[0467] In some embodiments, the electrical isolation region 951 can be achieved by means of ion implantation or diffusion, which transforms the N-type semiconductor region between the first N-InP layer 911a and the second N-InP layer 921 into a high-resistivity region, thereby achieving electrical isolation.

[0468] In some embodiments, the laser chip 900 may include a connecting waveguide region 952. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922. The connecting waveguide region 952 connects the first quantum well layer 912 and the second quantum well layer 922. Light output from the first quantum well layer 912 is transmitted through the connecting waveguide region 952 to the second quantum well layer 922 for signal modulation.

[0469] In some embodiments, ion implantation is performed downwards at the interface between the first quantum well layer 912 and the second quantum well layer 922. The ion implantation region is bombarded by the ion beam, forming deep-level defects and reducing conductivity, thus forming an electrically isolated region 951. The electrically isolated region 951 is a high-resistivity region, preventing charge carriers from entering the other party's working region through the electrically isolated region 951, thereby avoiding interference from the other party.

[0470] In some embodiments, after obtaining the electrically isolated region 951, an electrically isolated region of a predetermined thickness is etched to form a connecting waveguide region 952 on the surface of the electrically isolated region. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connecting waveguide region 952 establishes an optical connection between the first quantum well layer 912 and the second quantum well layer 922. Exemplarily, the etching predetermined thickness should ensure that the thickness of the connecting waveguide region 952 matches the thickness of the first quantum well layer 912 and the second quantum well layer 922.

[0471] S200: A P-InP layer is grown along the surface of the grating layer and the second quantum well layer.

[0472] In some embodiments, a P-InP layer 940a is grown along the surface of the grating layer 913 and the second quantum well layer 922. The P-InP layer 940a may cover the corresponding regions of the light-emitting region 910 and the electro-absorption modulation region 920.

[0473] S300: A first support portion, a second support portion, a third support portion and a fourth support portion are deposited on the substrate surface respectively. The first support portion and the third support portion are located on one side of the P-InP layer, and the second support portion and the fourth support portion are located on the other side of the P-InP layer.

[0474] In some embodiments, the electroabsorption modulation region 920 may include a first radio frequency electrode 925, a first DC electrode 926, a second radio frequency electrode 927, and a second DC electrode 928 for differential driving.

[0475] In some embodiments, a first support portion 931, a second support portion 932, a third support portion 933 and a fourth support portion 934 are deposited on the surface of the substrate 930a to support the first radio frequency electrode 925, the first DC electrode 926, the second radio frequency electrode 927 and the second DC electrode 928, respectively.

[0476] S400: A first radio frequency electrode is deposited on the surface of the first support portion, and a second radio frequency electrode is deposited on the surface of the third support portion; a first DC electrode is deposited on the surface of the second support portion, and a second DC electrode is deposited on the surface of the fourth support portion.

[0477] In some embodiments, a first radio frequency electrode 925 is deposited on the surface of the first support portion 931, a second radio frequency electrode 927 is deposited on the surface of the third support portion 933, a first DC electrode 926 is deposited on the surface of the second support portion 932, and a second DC electrode 928 is deposited on the surface of the fourth support portion 934.

[0478] S500: The second electrode portion is formed by deposition on the surface of the N-InP layer, and the transition electrode portion is formed by deposition on the surface of the fourth support portion.

[0479] In some embodiments, a second electrode portion 924 is deposited on the surface of the N-InP layer. A transition electrode portion 9341 is formed on the surface of the fourth support portion 934.

[0480] In some embodiments, the second electrode portion 924 is located on the surface of the second N-InP layer 921.

[0481] S600: A first electrical connection bridge is formed between the first radio frequency electrode and the first DC electrode, a second electrical connection bridge is formed between the second electrode portion and the transfer electrode portion, and a third electrical connection bridge is formed between the transfer electrode portion and the second radio frequency electrode.

[0482] S700: The first electrode portion is grown along the surface of the first electrical connection bridge.

[0483] In some embodiments, the first radio frequency electrode 925 and the first DC electrode 926 are electrically connected to the first electrode portion 923, respectively. Since the first radio frequency electrode 925 and the first DC electrode 926 are located on opposite sides of the first electrode portion 923, a first electrical connection bridge 971 can be connected between the first radio frequency electrode 925 and the second radio frequency electrode 927. One end of the first electrical connection bridge 971 is electrically connected to the first radio frequency electrode 925, and the other end is electrically connected to the second radio frequency electrode 927. The first electrical connection bridge 971 is also electrically connected to the first electrode portion 923, so that the first radio frequency electrode 925 and the first DC electrode 926 are respectively electrically connected to the first electrode portion 923.

[0484] In some embodiments, the second radio frequency electrode 927 and the second DC electrode 928 are electrically connected to the second electrode portion 924, respectively. Since the second radio frequency electrode 927 and the second electrode portion 924 are located on opposite sides of the P-InP layer 940a, and the second DC electrode 928 and the second electrode portion 924 are located on the same side of the P-InP layer 940a, the electrical connection between the second radio frequency electrode 927 and the second electrode portion 924 requires a transfer. Therefore, a transfer electrode portion 9341 is provided on the surface of the fourth support portion 934, and the transfer electrode portion 9341 is electrically connected to the second DC electrode 928 located on the fourth support portion 934.

[0485] In some embodiments, a second electrical connection bridge 972 is connected between the second electrode portion 924 and the transfer electrode portion 9341, and the transfer electrode portion 9341 is electrically connected to the second DC electrode 928, thereby establishing an electrical connection between the second DC electrode 928 and the second electrode portion 924, and realizing the electrical connection between the two.

[0486] In some embodiments, a second electrical connection bridge 972 is connected between the second electrode portion 924 and the transition electrode portion 9341, and a third electrical connection bridge 973 is connected between the transition electrode portion 9341 and the second radio frequency electrode 927, thereby establishing an electrical connection between the second radio frequency electrode 927 and the second electrode portion 924, and realizing the electrical connection between the two.

[0487] In some embodiments, the first electrical connection bridge 971, the second electrical connection bridge 972, and the third electrical connection bridge 973 may each be an air bridge. Air bridges utilize air, which has a low dielectric constant, as the dielectric, reducing parasitic capacitance. Due to the low dielectric constant of air, signal transmission speed in air bridges is relatively fast, and losses are low. The structural design of air bridges can optimize the signal transmission path, reduce signal reflection and scattering during transmission, thereby improving signal transmission efficiency and quality.

[0488] Figure 31 is a schematic diagram of a first electrical connection bridge fabrication process according to some embodiments of the present disclosure. As shown in Figure 31, in some embodiments, the fabrication of the first electrical connection bridge is used as an example to illustrate the fabrication of the electrical connection bridge.

[0489] In some embodiments, the fabrication process may include coating a photoresist along the region between the P-InP layer and the substrate. This step corresponds to step S181 in FIG12. Exemplarily, the photoresist is coated along the P-InP layer toward the substrate regions corresponding to the first support 931 and the second support 932.

[0490] In some embodiments, the fabrication process may include forming an arched bridge surface region by photolithography. This step corresponds to steps S182 and S183 in Figure 12.

[0491] In some embodiments, the fabrication process may include: curing the shape of the photoresist into an arc-shaped arch structure by high-temperature baking. This step corresponds to step S184 in Figure 12.

[0492] In some embodiments, photoresist is coated along the region between the P-InP layer and the substrate 930a. An arched bridge region is formed by photolithography. The shape of the photoresist is fixed into an arc-shaped arch structure by high-temperature baking. High-temperature curing alters the adhesive state of the photoresist, making it less susceptible to corrosion by the developer or stripper, and unaffected by subsequent metal lithography.

[0493] In some embodiments, the fabrication process may include: forming a first radio frequency electrode, a first direct current electrode, and a metal layer between the first radio frequency electrode and the first direct current electrode along the surface of a photoresist by metal photolithography and metal deposition, wherein the metal layer connects the first radio frequency electrode and the first direct current electrode. This step corresponds to step S185 in FIG12.

[0494] In some embodiments, the fabrication process may include: peeling off the photoresist between the metal layer and the substrate to form an air gap between the metal layer and the substrate, thereby forming a first electrical connection bridge between the first radio frequency electrode and the first DC electrode. This step corresponds to step S186 in FIG12.

[0495] In some embodiments, a first radio frequency electrode 925, a first direct current electrode 926, and a metal layer between the first radio frequency electrode 925 and the first direct current electrode 926 are formed along the surface of a photoresist by metal photolithography and metal deposition, wherein the metal layer connects the first radio frequency electrode 925 and the first direct current electrode 926. When the photoresist between the metal layer and the substrate is peeled off, an air gap is formed between the metal layer and the substrate, the metal layer is suspended, and its morphology before photoresist removal is maintained, thereby forming a first electrical connection bridge 971 between the first radio frequency electrode 925 and the first direct current electrode 926.

[0496] Figure 32 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure (Figure 1); Figure 33 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure (Figure 2); and Figure 34 is a schematic diagram of a laser chip fabrication process according to some embodiments of the present disclosure (Figure 33). As shown in Figures 32-34, in some embodiments, the laser chip fabrication process is illustrated in the accompanying drawings. The laser chip fabrication process includes:

[0497] In some embodiments, an N-InP layer is grown along the substrate surface, and a first quantum well layer 912 and a second quantum well layer 922 are grown together along the surface of the N-InP layer. A grating layer 913 is formed on the surface of the first quantum well layer 912. The first quantum well layer 912 and the second quantum well layer 922 are the active regions of the light-emitting region 910 and the electro-absorption modulation region 920, respectively. Light emission from the light-emitting region 910 occurs within the first quantum well layer 912, and signal modulation from the electro-absorption modulation region 920 occurs within the second quantum well layer 922. This process corresponds to step S110 shown in the accompanying drawings.

[0498] In some embodiments, when the light-emitting region 910 and the electro-absorption modulation region 920 share an N-InP layer, the driving modulation signal accessing the electro-absorption modulation region from the N-InP layer will be interfered with by the light-emitting region 9410, making differential driving difficult. Therefore, an electrical isolation region 951 is located between the first N-InP layer 911a and the second N-InP layer 921, providing N-plane electrical isolation between the light-emitting region 910 and the electro-absorption modulation region 920. In some embodiments, ion implantation is performed downwards at the interface between the first quantum well layer 912 and the second quantum well layer 922. The ion implantation region is bombarded by the ion beam, forming deep-level defects and reducing conductivity, thus forming the electrical isolation region 951. The electrical isolation region 951 is a high-resistivity region, preventing charge carriers from entering the other's working region through it, thereby avoiding interference from the other. This process corresponds to step S120 shown in the accompanying drawings.

[0499] In some embodiments, after obtaining the electrically isolated region 951, an electrically isolated region of a predetermined thickness is etched to form a connecting waveguide region 952 on the surface of the electrically isolated region. The connecting waveguide region 952 is located between the first quantum well layer 912 and the second quantum well layer 922, and the connecting waveguide region 952 establishes an optical connection between the first quantum well layer 912 and the second quantum well layer 922. This process corresponds to steps S130 and S140 shown in the accompanying drawings.

[0500] In some embodiments, a P-InP layer 940a is grown on the current surface. The P-InP layer 940a is laid across the entire plane. This process corresponds to step S150 shown in the accompanying drawings.

[0501] In some embodiments, the current structure is etched to form the structure shown in Figure 27 for subsequent steps. This process corresponds to step S160 shown in the figure.

[0502] In some embodiments, a first support portion 931, a second support portion 932, a third support portion 933, and a fourth support portion 934 are formed on the surface of the substrate 930a. A first radio frequency electrode 925, a first direct current electrode 926, a second radio frequency electrode 927, and a second direct current electrode 928 are deposited on the surfaces of the first support portion 931, the second support portion 932, the third support portion 933, and the fourth support portion 934, respectively. This process corresponds to step S170 shown in the accompanying drawings.

[0503] In some embodiments, a first electrical connection bridge 971 is formed between the first radio frequency electrode 925 and the first DC electrode 926, a second electrical connection bridge 972 is formed between the second electrode portion 924 and the transition electrode portion 9341, and a third electrical connection bridge 973 is formed between the transition electrode portion 9341 and the second radio frequency electrode 927. The first electrode portion 923 is grown along the surface of the first electrical connection bridge 971. This process corresponds to step S180.

[0504] In this disclosure, by reasonably setting the first radio frequency electrode, the second radio frequency electrode, the first DC electrode, and the second DC electrode, signal modulation is achieved by coplanar electrode differential driving mode, thereby reducing power consumption.

[0505] In some embodiments, the laser chip may include multiple light-emitting regions to achieve array light emission from the laser chip. Exemplarily, the laser chip may include a first light-emitting waveguide, a second light-emitting waveguide, a third light-emitting waveguide, and a fourth light-emitting waveguide to emit four beams of light that do not carry information. The following embodiments illustrate this using a laser chip comprising multiple light-emitting waveguides as an example.

[0506] Figure 35 is a schematic diagram of a laser component according to some embodiments of the present disclosure, showing the structure of a laser component 400b. The laser component 400b provided in the embodiments of the present disclosure can generate multiple light signals; for example, the laser component 400b can generate 2, 3, or 4 light signals.

[0507] In some embodiments, the laser assembly 400b may be disposed on the circuit board 300 or the support plate; in other examples, the laser assembly 400b may also be disposed on the TO tube socket.

[0508] In some embodiments, as shown in FIG35, the laser component 400b includes a laser chip 410, which can generate four light signals.

[0509] In some embodiments, the laser component 400b includes a substrate 420, on the surface of which a circuit pattern is formed. For example, transmission lines, pads, etc., are provided on the top surface of the substrate 420. A laser chip 410 is disposed on the substrate 420, and the laser chip 410 is correspondingly connected to a corresponding circuit pattern on the substrate 420 to supply power or input high-frequency signals to the laser chip 410 through the substrate 420.

[0510] Figure 36 is a schematic diagram of a laser chip structure according to some embodiments of the present disclosure, and Figure 37 is an exploded view of a laser chip according to some embodiments of the present disclosure. The dashed arrows in the figures indicate the direction of light transmission. As shown in Figures 36 and 37, in some embodiments, the laser chip 410 includes a chip body 411. The chip body 411 includes multiple ridge waveguides, etc., formed to generate optical signals; for example, the chip body 411 includes 2 ridge waveguides, 3 ridge waveguides, 4 ridge waveguides, etc. Grooves are formed on both sides of the ridge waveguides. The ridge waveguides in the chip body 411 may include a lower confinement layer, an active layer, an upper confinement layer, or a grating layer, etc., stacked sequentially.

[0511] In some embodiments, a ridge waveguide includes a light-emitting waveguide and a modulation waveguide. The output end of the light-emitting waveguide is connected to the input end of the modulation waveguide, i.e., the correspondingly connected light-emitting waveguide and modulation waveguide form a ridge waveguide. The light-emitting waveguide is used to output light, and the modulation waveguide is used to modulate the light output by the light-emitting waveguide to output an optical signal.

[0512] In some embodiments, the chip body 411 includes a first light-emitting waveguide 4111 and a second light-emitting waveguide 4112, which are arranged side by side with a gap between them. The first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 extend along the length of the chip body 4111. The first light-emitting waveguide 4111 and the second light-emitting waveguide 4112 are used to generate light, and form the light-emitting area of ​​the chip body 4111.

[0513] In some embodiments, the chip body 411 includes a first modulation waveguide 4113 and a second modulation waveguide 4114, which are arranged side by side with a gap between them. The first modulation waveguide 4113 and the second modulation waveguide 4114 extend along the length of the chip body 411. The first modulation waveguide 4113 is located at the light-emitting end of the first light-emitting waveguide 4111, and the second modulation waveguide 4114 is located at the light-emitting end of the second light-emitting waveguide 4112. For example, one end of the first modulation waveguide 4113 is connected to the light-emitting end of the first light-emitting waveguide 4111, and one end of the second modulation waveguide 4114 is connected to the light-emitting end of the second light-emitting waveguide 4112. The first modulation waveguide 4113 is used to modulate the light output from the first light-emitting waveguide 4111 to generate a light signal; the second modulation waveguide 4114 is used to modulate the light output from the second light-emitting waveguide 4112 to generate a light signal; the first modulation waveguide 4113 and the second modulation waveguide 4114 form the modulation region of the chip body 411. The chip body 411 also includes multiple modulation regions, which are located on one side of the light-emitting region, and the light-emitting port region is located on one side of the multiple modulation regions.

[0514] In some embodiments, a first modulation pad 412 and a second modulation pad 413 are disposed on the top of the chip body 411. The first modulation pad 412 is located above the first modulation waveguide 4113, and the second modulation pad 413 is located above the second modulation waveguide 4114. The first modulation pad 412 is used to load a high-frequency modulation signal onto the first modulation waveguide 4113, so that the first modulation waveguide 4113 modulates the light output from the first light-emitting waveguide 4111; the second modulation pad 413 is used to load a high-frequency modulation signal onto the second modulation waveguide 4114, so that the second modulation waveguide 4114 modulates the light output from the second light-emitting waveguide 4112.

[0515] In some embodiments, the first modulation waveguide 4113 is located near the edge of the chip body 411, and the first modulation pad 412 and the second modulation pad 413 are disposed above the gap between the first modulation waveguide 4113 and the second modulation waveguide 4114.

[0516] In some embodiments, the first modulation pad 412 is closer to one end of the chip body 411 than the second modulation pad 413, that is, the first modulation pad 412 is closer to the light-emitting area of ​​the chip body 411 than the second modulation pad 413. Of course, in some embodiments, the second modulation pad 413 may be closer to one end of the chip body 411 than the first modulation pad 412.

[0517] Figure 38 is a partially enlarged view of a laser chip according to some embodiments of the present disclosure, and Figure 39 is a schematic diagram of the modulation pad structure in Figure 38. In some embodiments, the first modulation pad 412 includes a first bonding portion 4121, and the second modulation pad 413 includes a second bonding portion 4131. The first bonding portion 4121 and the second bonding portion 4131 are located above the gap between the first modulation waveguide 4113 and the second modulation waveguide 4114. The first bonding portion 4121 is used to facilitate bonding on the first modulation pad 412, and the second bonding portion 4131 is used to facilitate bonding on the second modulation pad 413. Exemplarily, the top of the first bonding portion 4121 is circular, elliptical, square, etc., and the top of the second bonding portion 4131 is circular, elliptical, square, etc.

[0518] In some embodiments, the first bonding portion 4121 and the second bonding portion 4131 are arranged side by side above the gap between the first modulation waveguide 4113 and the second modulation waveguide 4114, so that the distances from the first bonding portion 4121 and the second bonding portion 4131 to the edge of the chip body 411 are approximately equal and relatively short, so as to facilitate control of the bonding length.

[0519] In some embodiments, the first modulation pad 412 includes a first electrode portion 4122, which is located on top of the first modulation waveguide 4113 and is connected to the first bonding portion 4121. For example, the first electrode portion 4122 is a narrow strip structure laid on top of the first modulation waveguide 4113.

[0520] In some embodiments, the second modulation pad 413 includes a second electrode portion 4132, which is located on top of the second modulation waveguide 4114 and is connected to the second bonding portion 4131. Exemplarily, the second electrode portion 4132 is a narrow strip structure laid on top of the second modulation waveguide 4114.

[0521] In some embodiments, a first light-emitting pad 414 and a second light-emitting pad 415 are disposed on the top of the chip body 411. The first light-emitting pad 414 is located above the first light-emitting waveguide 4111, and the top of the first light-emitting waveguide 4111 is in contact with the first light-emitting pad 414. The second light-emitting pad 415 is located above the second light-emitting waveguide 4112, and the top of the second light-emitting waveguide 4112 is in contact with the second light-emitting pad 415.

[0522] In some embodiments, the first light-emitting pad 414 includes a first wire bonding area 4141, which is used for connecting wires to the first light-emitting pad 414. For example, one end of the first wire bonding area 4141 is close to the end face of one end of the chip body 411, and the width of the first wire bonding area 4141 is greater than the width of other areas on the first light-emitting pad 414 to facilitate wire bonding on the first light-emitting pad 414.

[0523] In some embodiments, the second light-emitting pad 415 includes a second wire bonding area 4151 for connecting wires to the second light-emitting pad 415. For example, one end of the second wire bonding area 4151 is close to the other end of the first wire bonding area 4141, and the other end of the second wire bonding area 4151 is far from the other end of the first wire bonding area 4141. The second wire bonding area 4151 and the first wire bonding area 4141 are arranged alternately, providing sufficient wire bonding space for the first light-emitting pad 414 and the second light-emitting pad 415, and fully utilizing the space at the top of one end of the chip body 411.

[0524] In some embodiments, the chip body 411 includes a third light-emitting waveguide 4115, which extends along the length of the chip body 411. The third light-emitting waveguide 4115 is disposed on the side of the second light-emitting waveguide 4112, away from the first light-emitting waveguide 4111, and there is a gap between the third light-emitting waveguide 4115 and the second light-emitting waveguide 4112. The third light-emitting waveguide 4115 is used to generate light.

[0525] In some embodiments, the chip body 411 includes a fourth light-emitting waveguide 4116, which extends along the length of the chip body 411. The fourth light-emitting waveguide 4116 is disposed on the side of the third light-emitting waveguide 4115, away from the second light-emitting waveguide 4112, and there is a gap between the fourth light-emitting waveguide 4116 and the third light-emitting waveguide 4115. The fourth light-emitting waveguide 4116 is used to generate light.

[0526] In some embodiments, the chip body 411 includes a third modulation waveguide 4117, which extends along the length of the chip body 411. The third modulation waveguide 4117 is disposed on the side of the second modulation waveguide 4114, away from the first modulation waveguide 4113, and is arranged side by side with the second modulation waveguide 4114, with a gap between them. One end of the third modulation waveguide 4117 is connected to the light-emitting end of the third light-emitting waveguide 4115, and the third modulation waveguide 4117 is used to modulate the light output from the third light-emitting waveguide 4115 to generate a light signal.

[0527] In some embodiments, the chip body 411 includes a fourth modulation waveguide 4118, which extends along the length of the chip body 411. The fourth modulation waveguide 4118 is disposed beside the third modulation waveguide 4117, away from the second modulation waveguide 4117, and is arranged side-by-side with a gap between them. One end of the fourth modulation waveguide 4118 is connected to the light-emitting end of the fourth light-emitting waveguide 4116, and the fourth modulation waveguide 4118 is used to modulate the light output from the fourth light-emitting waveguide 4116 to generate a light signal.

[0528] In some embodiments, a third modulation pad 416 and a fourth modulation pad 417 are disposed on the top of the chip body 411. The third modulation pad 416 is located above the third modulation waveguide 4117, and the fourth modulation pad 417 is located above the fourth modulation waveguide 4118. The third modulation pad 416 is used to load a high-frequency modulation signal onto the third modulation waveguide 4117, so that the third modulation waveguide 4117 modulates the light output from the third light-emitting waveguide 4115; the fourth modulation pad 417 is used to load a high-frequency modulation signal onto the fourth modulation waveguide 4118, so that the fourth modulation waveguide 4118 modulates the light output from the fourth light-emitting waveguide 4116.

[0529] In some embodiments, the fourth modulation waveguide 4118 is located near the edge of the chip body 411, and the third modulation pad 416 and the fourth modulation pad 417 are disposed above the gap between the third modulation waveguide 4117 and the fourth modulation waveguide 4118.

[0530] In some embodiments, the fourth modulation pad 417 is closer to one end of the chip body 411 than the third modulation pad 416, that is, the fourth modulation pad 417 is closer to the light-emitting area of ​​the chip body 411 than the third modulation pad 416. Of course, in some embodiments, the third modulation pad 416 may be closer to one end of the chip body 411 than the fourth modulation pad 417.

[0531] In some embodiments, the third modulation pad 416 includes a third bonding portion 4161, and the fourth modulation pad 417 includes a fourth bonding portion 4171. The third bonding portion 4161 and the fourth bonding portion 4171 are located above the gap between the third modulation waveguide 4117 and the fourth modulation waveguide 4118. The third bonding portion 4161 facilitates bonding of the third modulation pad 416, and the fourth bonding portion 4171 facilitates bonding of the fourth modulation pad 417. Exemplarily, the top of the third bonding portion 4161 is circular, elliptical, square, etc., and the top of the fourth bonding portion 4171 is circular, elliptical, square, etc.

[0532] In some embodiments, the third bonding portion 4161 and the fourth bonding portion 4171 are arranged side by side above the gap between the third modulation waveguide 4117 and the fourth modulation waveguide 4118, so that the distances from the third bonding portion 4161 and the fourth bonding portion 4171 to the edge of the chip body 411 are approximately equal and relatively short, so as to facilitate control of the bonding length.

[0533] In some embodiments, the third modulation pad 416 includes a third electrode portion 4162, which is located on top of the third modulation waveguide 4117 and is connected to the third bonding portion 4161. Exemplarily, the third electrode portion 4162 is a narrow strip structure laid on top of the third modulation waveguide 4117.

[0534] In some embodiments, the fourth modulation pad 417 includes a fourth electrode portion 4172, which is located on top of the fourth modulation waveguide 4118 and is connected to the fourth bonding portion 4171. Exemplarily, the fourth electrode portion 4172 is a narrow strip structure laid on top of the fourth modulation waveguide 4118.

[0535] In some embodiments, a third light-emitting pad 418 and a fourth light-emitting pad 419 are disposed on the top of the chip body 411. The third light-emitting pad 418 is located above the third light-emitting waveguide 4115, and the top of the third light-emitting waveguide 4115 is in contact with the third light-emitting pad 418. The fourth light-emitting pad 419 is located above the fourth light-emitting waveguide 4116, and the top of the third light-emitting waveguide 4115 is in contact with the fourth light-emitting pad 419.

[0536] In some embodiments, the third light-emitting pad 418 includes a third wire bonding area 4181, which is used for connecting wires to the third light-emitting pad 418. For example, the third wire bonding area 4181 is located on the side of the second wire bonding area 4151, and the width of the third wire bonding area 4181 is greater than the width of other areas on the third light-emitting pad 418 to facilitate wire bonding on the third light-emitting pad 418.

[0537] In some embodiments, the fourth light-emitting pad 419 includes a fourth wire bonding area 4191, which is used to connect wires to the fourth light-emitting pad 419. Exemplarily, one end of the fourth wire bonding area 4191 is close to the end face of one end of the chip body 411, and the other end of the fourth wire bonding area 4191 is close to one end of the third wire bonding area 4181. The fourth wire bonding area 4191 and the third wire bonding area 4181 are arranged alternately, providing sufficient wire bonding space for the third light-emitting pad 418 and the fourth light-emitting pad 419, and fully utilizing the space at the top of one end of the chip body 411.

[0538] Figure 40 is a partially enlarged view of a laser chip according to some embodiments of the present disclosure, showing the structure of the light-emitting end of the laser chip. In some embodiments, the other end of the first modulation waveguide 4113 is the light-emitting end, used to output an optical signal. For example, the other end of the first modulation waveguide 4113 includes a first deflection portion 4113a, which deflects the other end of the first modulation waveguide 4113 relative to one end of the first modulation waveguide 4113, thereby deflecting the optical axis of the output optical signal of the first modulation waveguide 4113. Furthermore, the first deflection portion 4113a tilts the optical axis of the output optical signal of the first modulation waveguide 4113 relative to the optical axis of the input light of the first modulation waveguide 4113. When an optical device is provided at the light-emitting end of the laser chip 410, a portion of the optical signal output from the first modulation waveguide 4113 will be reflected by the optical device during its transmission. The first deflection portion 4113a can prevent the reflected optical signal from entering the first modulation waveguide 4113.

[0539] In some embodiments, the deflection angle of the first deflection portion 4113a is 5°-10°, such as 5°, 7°, 9°, 10°, etc.

[0540] In some embodiments, the other end of the second modulation waveguide 4114 is the light-emitting end, used to output an optical signal. The other end of the second modulation waveguide 4114 includes a second deflection portion 4114a, which deflects the other end of the second modulation waveguide 4114 relative to one end of the second modulation waveguide 4114, thereby deflecting the optical axis of the output optical signal of the second modulation waveguide 4114. Furthermore, the second deflection portion 4114a tilts the optical axis of the output optical signal of the second modulation waveguide 4114 relative to the optical axis of the input light of the second modulation waveguide 4114. When an optical device is provided at the light-emitting end of the laser chip 410, a portion of the optical signal output from the second modulation waveguide 4114 will be reflected by the optical device during its transmission. The second deflection portion 4114a prevents the reflected optical signal from entering the second modulation waveguide 4114.

[0541] In some embodiments, the deflection angle of the second deflection portion 4114a is 5°-10°, such as 5°, 7°, 9°, 10°, etc.

[0542] In some embodiments, the other end of the third modulation waveguide 4117 is the light-emitting end, used to output an optical signal. The other end of the third modulation waveguide 4117 includes a third deflection portion 4117a, which deflects the other end of the third modulation waveguide 4117 relative to one end of the third modulation waveguide 4117, thereby deflecting the optical axis of the output optical signal of the third modulation waveguide 4117. Furthermore, the third deflection portion 4117a tilts the optical axis of the output optical signal of the third modulation waveguide 4117 relative to the optical axis of the input light of the third modulation waveguide 4117. When an optical device is provided at the light-emitting end of the laser chip 410, a portion of the optical signal output from the third modulation waveguide 4117 will be reflected by the optical device during its transmission. The third deflection portion 4117a prevents the reflected optical signal from entering the third modulation waveguide 4117.

[0543] In some embodiments, the deflection angle of the third modulation waveguide 4117 is 5-10°, such as 7-9°.

[0544] In some embodiments, the other end of the fourth modulation waveguide 4118 is the light-emitting end, used to output an optical signal. The other end of the fourth modulation waveguide 4118 includes a fourth deflection portion 4118a, which deflects the other end of the fourth modulation waveguide 4118 relative to one end of the fourth modulation waveguide 4118, thereby deflecting the optical axis of the output optical signal of the fourth modulation waveguide 4118. Furthermore, the fourth deflection portion 4118a tilts the optical axis of the output optical signal of the fourth modulation waveguide 4118 relative to the optical axis of the input light of the fourth modulation waveguide 4118. When an optical device is provided at the light-emitting end of the laser chip 410, a portion of the optical signal output from the fourth modulation waveguide 4118 will be reflected by the optical device during its transmission. The fourth deflection portion 4118a prevents the reflected optical signal from entering the fourth modulation waveguide 4118.

[0545] In some embodiments, the deflection angle of the fourth modulation waveguide 4118 is 5°-10°, such as 5°, 7°, 9°, 10°, etc.

[0546] Figure 41 is a schematic diagram of another laser chip structure provided according to some embodiments of the present disclosure. As shown in Figure 41, the first light-emitting pad 414 and the second light-emitting pad 415 have the same shape, and the first light-emitting pad 414 and the second light-emitting pad 415 are arranged side by side on the top of the light-emitting area of ​​the chip body 411.

[0547] In some embodiments, the third light-emitting pad 418 and the fourth light-emitting pad 419 have the same shape and are arranged side by side on the top of the light-emitting area of ​​the chip body 411.

[0548] In some embodiments, the first light-emitting pad 414 and the fourth light-emitting pad 419 are symmetrically arranged on the top of the chip body 411.

[0549] In some embodiments, the second light-emitting pad 415 and the third light-emitting pad 418 are symmetrically arranged on the top of the chip body 411.

[0550] Figure 42 is a perspective view of a substrate according to some embodiments of the present disclosure, Figure 43 is a top view of a substrate according to some embodiments of the present disclosure, and Figure 44 is a partial enlarged view of point A in Figure 43. As shown in Figures 42-44, the substrate 420 includes a substrate body 421, and a circuit pattern is provided on the surface of the substrate body 421. The substrate body 421 is a ceramic substrate body. In some embodiments, an electrical connection area 422 is provided on the top surface of the substrate body 421, and the electrical connection area 422 is used for mounting and connecting the laser chip 410.

[0551] In some embodiments, the substrate body 421 includes a first side 4211 and a second side 4212, wherein the first side 4211 is located at one end of the substrate body 421, and the second side 4212 is located at the other end of the substrate body 421. One end of the electrical connection region 422 is spaced apart from one end of the substrate body 421, and the other end of the electrical connection region 422 is close to the end face of the other end of the substrate body 421. One end of the electrical connection region 422 is spaced apart from the first side 4211, and the other end of the electrical connection region 422 is close to the second side 4212.

[0552] In some embodiments, a solder mask bridge may be provided at the edge of the electrical connection area 422 to prevent solder flow during the process of soldering the laser chip 410 to the electrical connection area 422.

[0553] In some embodiments, a first high-frequency line 423 and a second high-frequency line 424 are disposed on the top surface of the substrate body 421, and the first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are located on one side of the electrical connection region 422. For example, the first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are disposed side by side on one side of the electrical connection region 422 and are as close as possible to the side of the electrical connection region 422.

[0554] In some embodiments, the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424 are located at the top of the second side edge of the substrate body 421. The first end of the first high-frequency line 423 is smoothly connected to the second end of the first high-frequency line 423, and the first end of the second high-frequency line 424 is smoothly connected to the second end of the second high-frequency line 424.

[0555] In some embodiments, the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424 are located at the top of one side edge of the substrate body 421. The first end of the first high-frequency line 423 is smoothly connected to the second end of the first high-frequency line 423, and the first end of the second high-frequency line 424 is smoothly connected to the second end of the second high-frequency line 424.

[0556] In some embodiments, a third high-frequency line 425 and a fourth high-frequency line 426a are disposed on the top surface of the substrate body 421, with the first ends of the third high-frequency line 425 and the fourth high-frequency line 426a located on the other side of the electrical connection region 422. For example, the first ends of the third high-frequency line 425 and the fourth high-frequency line 426a are disposed side-by-side on the other side of the electrical connection region 422, and are as close as possible to the side of the electrical connection region 422.

[0557] In some embodiments, the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a are located at the top of the second side edge of the substrate body 421. The second end of the third high-frequency line 425 is smoothly connected to the first end of the third high-frequency line 425, and the second end of the fourth high-frequency line 426a is smoothly connected to the first end of the fourth high-frequency line 426a.

[0558] In some embodiments, the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a are located at the top of the other edge of the substrate body 421. The second end of the third high-frequency line 425 is smoothly connected to the first end of the third high-frequency line 425, and the second end of the fourth high-frequency line 426a is smoothly connected to the first end of the fourth high-frequency line 426a.

[0559] In some embodiments, a ground layer 427 is provided on the top surface of the substrate body 421. The ground layer 427 is connected to the electrical connection region 422. The ground layer 427 surrounds the side of the first high-frequency line 423 and the like and is insulated from the first high-frequency line 423 and the like. In some embodiments, the ground layer 427 extends to the side or bottom surface of the substrate body.

[0560] In some embodiments, a first output pad 431 is provided on the top surface of the substrate body 421, and the first output pad 431 is disposed on the side of the first end of the first high-frequency line 423. Exemplarily, a first thin-film resistor 4311 is provided on the edge of the first output pad 431, one end of the first thin-film resistor 4311 is electrically connected to the first output pad 431, and the other end of the first thin-film resistor 4311 is electrically connected to the ground layer 427. The first thin-film resistor 4311 serves as a matching resistor for the first modulation output circuit. Of course, in this embodiment, the matching resistor for the first modulation output circuit is not limited to the first thin-film resistor 4311, and other types of resistors can also be used.

[0561] In some embodiments, a second output pad 432 is disposed on the top surface of the substrate body 421, and the second output pad 432 is disposed on the side of the first end of the second high-frequency line 424. Exemplarily, a second thin-film resistor 4321 is disposed on the edge of the second output pad 432, one end of the second thin-film resistor 4321 is electrically connected to the second output pad 432, and the other end of the second thin-film resistor 4321 is electrically connected to the ground layer 427. The second thin-film resistor 4321 serves as a matching resistor for the second modulation output circuit. Of course, in this embodiment, the matching resistor for the second modulation output circuit is not limited to the second thin-film resistor 4321, and other types of resistors can also be used.

[0562] In some embodiments, the first output pad 431 and the second output pad 432 are close to the electrical connection area 422. The first output pad 431 is located on the side of the first end of the first high-frequency line 423 and away from the first end of the second high-frequency line 424. The second output pad 432 is located on the side of the first end of the second high-frequency line 424 and away from the first end of the first high-frequency line 423. The first end of the first high-frequency line 423 and the first end of the second high-frequency line 424 are close to each other.

[0563] In some embodiments, a third output pad 433 is provided on the top surface of the substrate body 421, and the third output pad 433 is disposed on the side of the first end of the third high-frequency line 425. Exemplarily, a third thin-film resistor 4331 is provided on the edge of the third output pad 433, one end of the third thin-film resistor 4331 is electrically connected to the third output pad 433, and the other end of the third thin-film resistor 4331 is electrically connected to the ground layer 427. The third thin-film resistor 4331 serves as a matching resistor for the third modulation output circuit. Of course, in this embodiment, the matching resistor for the third modulation output circuit is not limited to the third thin-film resistor 4331, and other types of resistors can also be used.

[0564] In some embodiments, a fourth output pad 434 is disposed on the top surface of the substrate body 421, and the fourth output pad 434 is disposed on the side of the first end of the fourth high-frequency line 426a. Exemplarily, a fourth thin-film resistor 4341 is disposed on the edge of the fourth output pad 434, one end of the fourth thin-film resistor 4341 is electrically connected to the fourth output pad 434, and the other end of the fourth thin-film resistor 4341 is electrically connected to the ground layer 427. The fourth thin-film resistor 4341 serves as a matching resistor for the fourth modulation output circuit. Of course, in this embodiment, the matching resistor for the fourth modulation output circuit is not limited to the fourth thin-film resistor 4341, and other types of resistors can also be used.

[0565] In some embodiments, the third output pad 433 and the fourth output pad 434 are close to the electrical connection area 422. The third output pad 433 is located on the side of the first end of the third high-frequency line 425 and away from the first end of the fourth high-frequency line 426a. The fourth output pad 434 is located on the side of the first end of the fourth high-frequency line 426a and away from the first end of the third high-frequency line 425. The first end of the third high-frequency line 425 and the first end of the fourth high-frequency line 426a are close to each other.

[0566] In some implementations, the second output pad 432 is located at the edge of the other end of the substrate body 421, and the third output pad 433 is located at the edge of the other end of the substrate body 421.

[0567] In some embodiments, a first LD pad 435 is provided on the top surface of the substrate body 421, and the first LD pad 435 is located between the second end of the first high-frequency line 423 and the second end of the second high-frequency line 424.

[0568] In some embodiments, a second LD pad 436 is provided on the top surface of the substrate body 421, and the second LD pad 436 is located between the second end of the first high-frequency line 423 and the second end of the fourth high-frequency line 426a.

[0569] In some embodiments, a third LD pad 437 is provided on the top surface of the substrate body 421, and the third LD pad 437 is located between the second end of the first high-frequency line 423 and the second end of the fourth high-frequency line 426a.

[0570] In some embodiments, a fourth LD pad 438 is provided on the top surface of the substrate body 421, and the fourth LD pad 438 is located between the second end of the third high-frequency line 425 and the second end of the fourth high-frequency line 426a.

[0571] In some embodiments, the second LD pad 436 and the third LD pad 437 are arranged side by side on one side of the electrical connection area 422.

[0572] The connection method between the laser chip 410 and the substrate 420 will be described below by way of example.

[0573] Figure 45 is a schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments of the present disclosure, and Figure 46 is a schematic diagram of the electrical connection between a laser chip and a substrate according to some embodiments of the present disclosure; Figures 45 and 46 show an electrical connection state between a laser chip and a substrate.

[0574] In some embodiments, the first modulation pad 412 is wire-connected to the first end of the first high-frequency line 423, the first modulation pad 412 is wire-connected to the first output pad 431, and the first light-emitting pad 414 is wire-connected to the first LD pad 435. For example, the two wires connecting the first modulation pad 412 extend from the first modulation pad 412 to the same side of the chip body 411.

[0575] In some embodiments, the second modulation pad 413 is wire-connected to the first end of the second high-frequency line 424, the second modulation pad 413 is wire-connected to the second output pad 432, and the second light-emitting pad 415 is wire-connected to the second LD pad 436. For example, the two wires connecting the second modulation pad 413 extend from the second modulation pad 413 to the same side of the chip body 411.

[0576] In some embodiments, the third modulation pad 416 is wire-connected to the first end of the third high-frequency line 425, the third modulation pad 416 is wire-connected to the third output pad 433, and the third light-emitting pad 418 is wire-connected to the third LD pad 437. Exemplarily, the two wires connecting the third modulation pad 416 extend from the third modulation pad 416 to the same side of the chip body 411.

[0577] In some embodiments, the fourth modulation pad 417 is wire-connected to the first end of the fourth high-frequency line 426a, the fourth modulation pad 417 is wire-connected to the fourth output pad 434, and the fourth light-emitting pad 419 is wire-connected to the fourth LD pad 438. Exemplarily, the two wires connecting the fourth modulation pad 417 extend from the fourth modulation pad 417 to the same side of the chip body 411.

[0578] In the laser component 400b provided in this embodiment, the first modulation pad 412, the second modulation pad 413, the third modulation pad 416, and the fourth modulation pad 417 are all close to the edge of the laser chip 410 and are equidistant. Combined with the fact that the first ends of the first high-frequency line 423, the second high-frequency line 424, the third high-frequency line 425, and the fourth high-frequency line 426a on the substrate 420 are located at the edge of the electrical connection area 422 and close to it, the bonding lengths of the first ends of the first high-frequency line 423 and the first modulation pad 412, the first ends of the second high-frequency line 424 and the second modulation pad 413, the first ends of the third high-frequency line 425 and the third modulation pad 416, and the first ends of the fourth high-frequency line 426a and the fourth modulation pad 417 can be effectively controlled to manage the parasitic inductance of the bonding. This ensures uniform high-frequency performance of the four channels on the laser component 400b, enabling the generation of four light signals. Therefore, the laser component 400b provided in this embodiment of the present disclosure is convenient to meet the requirements of optical module integration for multi-channel optical signal transmission.

[0579] In some embodiments, the length of each wire in the laser assembly 400b can be controlled to be around 260μm, such as 250-300μm.

[0580] In some embodiments, the light-emitting end of the laser chip 410 extends beyond the edge of the second side 4212, meaning that the light-emitting end of the laser chip 410 is not flush with the other end of the substrate body 421. The extension of the light-emitting end of the laser chip 410 to the second side 4212 facilitates the assembly of optical devices and the like at the light-emitting end of the laser chip 410. For example, the first deflection portion 4113a, etc., is located outside the substrate body 421.

[0581] Figure 47 is a schematic diagram of another laser chip structure provided according to some embodiments of the present disclosure, and Figure 48 is a front view of another laser chip provided according to some embodiments of the present disclosure. Figures 47 and 48 show the structure of another laser chip. As shown in Figures 47 and 48, in some embodiments, the laser chip 410 includes a first insulating layer 4101, which is disposed on the side of the first modulation waveguide 4113 and located below the first modulation pad 412.

[0582] In some embodiments, the laser chip 410 includes a second insulating layer 4102, which is disposed on the side of the second modulation waveguide 4114 and located below the second modulation pad 413.

[0583] In some embodiments, the laser chip 410 includes a third insulating layer 4103, which is disposed on the side of the third modulation waveguide 4117 and located below the third modulation pad 416.

[0584] In some embodiments, the laser chip 410 includes a fourth insulating layer 4104, which is disposed on the side of the fourth modulation waveguide 4118 and located below the fourth modulation pad 417.

[0585] In some embodiments, the first insulating layer 4101, the second insulating layer 4102, etc., are made of materials with low dielectric constants, such as PBO, PBI, etc., to reduce the parasitic capacitance effect of the first modulation pad 412, the second modulation pad 413, etc., and improve the bandwidth of the laser chip 410.

[0586] In some embodiments, the trenches on both sides of the first light-emitting waveguide 4111 are filled with a material with a low dielectric constant, such as PBO or PBI. The first light-emitting pad 414 covers the trenches on both sides of the first light-emitting waveguide 4111.

[0587] Figure 49 is a schematic diagram of another laser chip structure without pads provided according to some embodiments of the present disclosure. Figure 49 shows a state in which an insulating layer or the like is provided on the laser chip.

[0588] In some embodiments, the first insulating layer 4101 includes a first insulating layer 4101a and a first insulating layer 4101b, wherein the first insulating layer 4101a is located on one side of the first modulation waveguide 4113, and the first insulating layer 4101b is disposed on the other side of the first modulation waveguide 4113. Exemplarily, the first insulating layer 4101b supports and connects to the first bonding portion 4121. However, the structure of the first insulating layer 4101 is not limited to this in the embodiments of this disclosure.

[0589] In some embodiments, the second insulating layer 4102 includes a second insulating layer 4102a and a second insulating layer 4102b, with the second insulating layer 4102a located on one side of the second modulation waveguide 4114 and the second insulating layer 4102b disposed on the other side of the second modulation waveguide 4114. Exemplarily, the second insulating layer 4102a supports and connects to the second bonding portion 4131. However, the structure of the second insulating layer 4102 is not limited to this in the embodiments of this disclosure.

[0590] In some embodiments, the third insulating layer 4103 includes a third insulating layer 4103a and a third insulating layer 4103b, with the third insulating layer 4103a located on one side of the third modulation waveguide 4117 and the third insulating layer 4103b disposed on the other side of the third modulation waveguide 4117. Exemplarily, the third insulating layer 4103b supports and connects to the third bonding portion 4161. However, the structure of the third insulating layer 4103 is not limited to this in the embodiments of this disclosure.

[0591] In some embodiments, the fourth insulating layer 4104 includes a fourth insulating layer 4104a and a fourth insulating layer 4104b, with the fourth insulating layer 4104a located on one side of the fourth modulation waveguide 4118 and the fourth insulating layer 4104b disposed on the other side of the fourth modulation waveguide 4118. Exemplarily, the fourth insulating layer 4104a supports and connects to the fourth bonding portion 4131. However, the structure of the fourth insulating layer 4104 is not limited to this in the embodiments of this disclosure.

[0592] Figure 50 is a cross-sectional view of another laser chip provided according to some embodiments of the present disclosure, and Figure 51 is a cross-sectional view of another laser chip provided according to some embodiments of the present disclosure. Figures 50 and 51 show the cross-sectional structure of a laser chip in the modulation region. As shown in Figures 21 and 22, in some embodiments, the first modulation waveguide 4113 and the second modulation waveguide 4114, etc., pass through the quantum hydrazine layer, etc. at the etching depth.

[0593] In some embodiments, the bottom of the first insulating layer 4101, etc., is lower than the bottom of the side trench of the first modulation waveguide 4113, etc.

[0594] Figure 52 is a cross-sectional view three of another laser chip provided according to some embodiments of the present disclosure, and Figure 53 is a cross-sectional view four of another laser chip provided according to some embodiments of the present disclosure. Figures 52 and 53 show the cross-sectional structure of a laser chip in the light-emitting region. As shown in Figures 23 and 24, the etching depth of the first light-emitting waveguide 4111 and the second light-emitting waveguide 4112, etc., does not penetrate the quantum hydrazine layer, that is, the etching depth of the first light-emitting waveguide 4111 and the second light-emitting waveguide 4112, etc., is located above the quantum hydrazine layer.

[0595] Figure 54 is a partial schematic diagram of another laser chip provided according to some embodiments of the present disclosure, and Figure 55 is a partial schematic diagram of another laser chip provided according to some embodiments of the present disclosure. Figures 54 and 55 show the morphology of a connection region between a light-emitting waveguide and a modulation waveguide. As shown in Figures 25 and 26, the chip body 411 includes a first connecting waveguide 4110. One end of the first connecting waveguide 4110 is connected to the output terminal of the first light-emitting waveguide 4111, and the other end of the first connecting waveguide 4110 is connected to the input terminal of the first modulation waveguide 4113. The first connecting waveguide 4110 is used for the transition from the first light-emitting waveguide 4111 to the first modulation waveguide 4113, so as to ensure the coupling efficiency of the output light from the first light-emitting waveguide 4111 to the first modulation waveguide 4113.

[0596] In some embodiments, the first connecting waveguide 4110 includes a first tapered portion 4110a and a second tapered portion 4110b. The width of one end of the first tapered portion 4110a is smaller than the width of the other end, and the width of one end of the second tapered portion 4110b is larger than the width of the other end. One end of the first tapered portion 4110a is connected to the output terminal of the first light-emitting waveguide 4111, and the other end of the first tapered portion 4110a is connected to one end of the second tapered portion 4110b. The other end of the second tapered portion 4110b is connected to the input terminal of the first modulation waveguide 4113. However, the structure of the first connecting waveguide 4110 in this embodiment is not limited to this.

[0597] In some embodiments, the chip body 411 includes a first gradient groove 411a and a second gradient groove 411b, which are located within a groove on the side of the first connecting waveguide 4110. For example, the first gradient groove 411a is disposed on one side of the first connecting waveguide 4110, and the second gradient groove 411b is disposed on the other side of the first connecting waveguide 4110.

[0598] In some embodiments, the width of one end of the first gradient groove 411a is smaller than the width of the other end of the first gradient groove 411a. For example, the other end of the first gradient groove 411a extends to the side of the first gradient portion 4110a.

[0599] In some embodiments, the width of one end of the second gradient groove 411b is smaller than the width of the other end of the second gradient groove 411b. For example, the other end of the second gradient groove 411b extends to the side of the first gradient portion 4110a.

[0600] In some embodiments, connecting portions may be provided between the second light-emitting waveguide 4112 and the second modulation waveguide 4114, or between the third light-emitting waveguide 4115 and the third modulation waveguide 4117, etc. The shape of the connecting portion can be referred to the shape of the first connecting waveguide 4110. A gradient groove may be provided on the side of the connecting portion, and the shape of the gradient groove can be referred to the shape of the first gradient groove 411a or the second gradient groove 411b.

Claims

1. An optical module, wherein, include: Circuit board; Laser components, including: The substrate is electrically connected to the circuit board. A laser chip is disposed on the surface of the substrate and electrically connected to the substrate. The laser chip includes: Second substrate; A light-emitting region, located at one end of the laser chip and disposed on the surface of the second substrate, emits multiple beams of light that do not carry information; including: First N-InP layer; Multiple modulation regions, located on one side of the light-emitting region and disposed on the surface of the second substrate, wherein one of the multiple modulation regions modulates a beam of light without carrying information to generate an optical signal; including: Second N-InP layer; Second P-InP layer; The first electrode portion is disposed on the surface of the second P-InP layer; The second electrode portion is disposed on the surface of the second N-InP layer; A first radio frequency electrode is located on one side of the first electrode portion. The first radio frequency electrode is electrically connected to the first electrode portion and is insulated from the second substrate. The second radio frequency electrode is located on both sides of the second P-InP layer with the second electrode portion. The second radio frequency electrode is electrically connected to the second electrode portion and is insulated from the second substrate. The second radio frequency electrode and the first radio frequency electrode form a differential driving electrode. A first DC electrode is located on the other side of the first electrode portion. The first DC electrode is electrically connected to the first electrode portion and is insulated from the second substrate. The second DC electrode is located on the same side of the second P-InP layer as the second electrode portion. The second DC electrode is electrically connected to the second electrode portion and is insulated from the second substrate. A transfer electrode portion is provided on the side of the second DC electrode. The first electrical connection bridge has one end electrically connected to the first radio frequency electrode and the other end electrically connected to the first DC electrode; the first electrical connection bridge is electrically connected to the first electrode portion so that the first radio frequency electrode and the first DC electrode are respectively electrically connected to the first electrode portion. The second electrical connection bridge has one end electrically connected to the second electrode section and the other end electrically connected to the transfer electrode section. The transfer electrode section is electrically connected to the second DC electrode so that the second DC electrode is electrically connected to the second electrode section. The third electrical connection bridge has one end electrically connected to the adapter electrode section and the other end electrically connected to the second radio frequency electrode, so that the second radio frequency electrode is electrically connected to the second electrode section; The light-emitting port area is located on one side of the plurality of modulation areas and is disposed opposite to the light-emitting area. The plurality of modulation areas are located between the light-emitting area and the light-emitting port area. The multiple optical signals generated by the modulation of the plurality of modulation areas are output along the light-emitting port area.

2. The optical module according to claim 1, wherein, The laser chip further includes multiple couplers located between the multiple modulation regions and the light output port region, wherein one coupler performs mode conversion on a beam of optical signal; the one coupler includes: Third substrate; The third N-InP layer is located above the third substrate; The third P-InP layer is located above the third N-InP layer; The waveguide layer includes a nonlinear gradient segment, a first non-gradient segment, and a second non-gradient segment. One end of the nonlinear gradient segment is connected to the first non-gradient segment, and the other end is connected to the second non-gradient segment. The first non-gradient segment faces the first electro-absorption modulation region. The outer contour of the nonlinear gradient segment includes a first arc and a second arc. The first arc is concave towards the center of the waveguide, and the second arc is convex towards the center of the waveguide. Along the direction from the first non-gradient segment to the second non-gradient segment, the waveguide width between the first arc and the second arc gradually decreases. A doped layer is located within the third N-InP layer, and the refractive index of the doped layer is greater than that of the third P-InP layer.

3. The optical module according to claim 1, wherein, The light-emitting area includes a first end and a second end disposed opposite to each other. The first end emits a first light beam, and the second end emits a second light beam. Neither the first light beam nor the second light beam carries information. The propagation direction of the second light beam is guided from the second end to the first end so that the propagation direction of the second light beam is consistent with that of the first light beam. The laser chip includes: A first beam splitter is located on the optical path of the first beam transmission to split the first beam into a first beam splitter and a second beam splitter; the first beam splitter and the second beam splitter are transmitted along one side of the light-emitting area; The second beam splitter is located on the same side as the first end, and the second beam splitter is located on the transmission optical path of the second beam, so as to split the second beam into a third beam splitter and a fourth beam splitter; the third beam splitter and the fourth beam splitter are transmitted along the other side of the light-emitting area.

4. The optical module according to claim 3, wherein, The plurality of modulation regions include a first electroabsorption modulation region, a second electroabsorption modulation region, a third electroabsorption modulation region, and a fourth electroabsorption modulation region. The first electroabsorption modulation region is located on the transmission optical path of the first beam splitter to modulate the signal of the first beam splitter and generate a first optical signal. The second electroabsorption modulation region is located on the transmission optical path of the second beam splitter to modulate the signal of the second beam splitter and generate a second optical signal. The third electroabsorption modulation region is located on the transmission optical path of the third beam splitter to modulate the signal of the third beam splitter and generate a third optical signal. The fourth electroabsorption modulation region is located on the transmission optical path of the first beam splitter to modulate the signal of the fourth beam splitter and generate a fourth optical signal. The fourth electroabsorption modulation region and the third electroabsorption modulation region are located on the other side of the light-emitting region. The modulated first optical signal, second optical signal, third optical signal, and fourth optical signal are transmitted toward the same side of the laser chip. The surface of the laser chip includes: A first region is used to set a first electrode group corresponding to the first electroabsorption modulation region, the first electrode group comprising: A first radio frequency electrode is disposed on the surface of the laser chip and electrically connected to the substrate; The second radio frequency electrode is disposed on one side of the first radio frequency electrode and is electrically connected to the substrate; A first DC electrode is disposed on the other side of the first RF electrode and is electrically connected to the substrate. The second DC electrode is disposed on one side of the second RF electrode and is electrically connected to the substrate; The second region, adjacent to the first region, is used to house a first bias electrode and a second bias electrode. The first bias electrode and the second bias electrode are respectively electrically connected to the light-emitting area to input a bias current into the light-emitting area. The second region is positioned opposite to the light-emitting port region. A third region, disposed opposite to the first region, is used to house the third electrode group corresponding to the third electroabsorption modulation region; the third electrode group includes: The third radio frequency electrode is disposed on the surface of the laser chip and electrically connected to the substrate; A fourth radio frequency electrode is disposed on one side of the third radio frequency electrode and is electrically connected to the substrate; The third DC electrode is located on the other side of the third RF electrode and is electrically connected to the substrate. The fourth DC electrode is disposed on one side of the fourth RF electrode and is electrically connected to the substrate.

5. The optical module according to claim 4, wherein, The substrate includes: A first signal pad is disposed on the surface of the substrate, located on one side of the first radio frequency electrode, and electrically connected to the first radio frequency electrode; The second signal pad is located on one side of the first signal pad and is electrically connected to the second radio frequency electrode; The third signal pad is located on the side close to the circuit board and is electrically connected to the circuit board; The fourth signal pad is located on one side of the third signal pad and is electrically connected to the circuit board; The first differential drive signal line is connected at one end to the first signal pad and at the other end to the third signal pad. The second differential drive signal line is connected at one end to the second signal pad and at the other end to the fourth signal pad. The fifth signal pad is located on the other side of the first signal pad and is electrically connected to the first DC electrode; The sixth signal pad is located on one side of the second signal pad and is electrically connected to the second DC electrode; The seventh signal pad is located on the side close to the circuit board and is electrically connected to the circuit board; The eighth signal pad is located on one side of the seventh signal pad and is electrically connected to the circuit board; The first differential bias signal line is connected to the fifth signal pad at one end and to the seventh signal pad at the other end. The second differential bias signal line is connected at one end to the sixth signal pad and at the other end to the eighth signal pad.

6. The optical module according to claim 4, wherein, The first electroabsorption modulation region includes a first electrode portion and a second electrode portion; The first radio frequency electrode is electrically connected to the first electrode portion; the first DC electrode is electrically connected to the first radio frequency electrode, so that the first DC electrode is electrically connected to the first electrode portion; the second radio frequency electrode is electrically connected to the second electrode portion; the second DC electrode is electrically connected to the second radio frequency electrode, so that the second DC electrode is electrically connected to the second electrode portion.

7. The optical module according to claim 1, wherein, A groove is formed on the surface of the substrate, and the laser chip is embedded in the groove so that the surface of the laser chip is flush with the surface of the substrate.

8. The optical module according to claim 1, wherein, The laser chip includes: A first support portion is disposed on the surface of the second substrate and located on one side of the second N-InP layer, for supporting the first radio frequency electrode; The second support portion is disposed on the surface of the second substrate and located on the other side of the second N-InP layer, and is used to support the first DC electrode; The third support portion is disposed on the surface of the second substrate and located on one side of the first N-InP layer, and is used to support the second radio frequency electrode; The fourth support portion is disposed on the surface of the second substrate and located on the other side of the first N-InP layer, and is used to support the second DC electrode and the transfer electrode portion.

9. The optical module according to claim 1, wherein, The light-emitting area includes: The first N-InP layer; The first quantum well layer is disposed above the first N-InP layer; A grating layer is disposed above the first quantum well layer; The first P-InP layer is disposed above the grating layer; The electroabsorption modulation region includes: The second N-InP layer; The second quantum well layer is disposed above the second N-InP layer; A second P-InP layer is disposed above the second quantum well layer, and the second P-InP layer extends from the surface of the grating layer to the surface of the second quantum well layer.

10. The optical module according to claim 8, wherein, The first support portion and the third support portion are both located on one side of the second P-InP layer, so that the first radio frequency electrode and the second radio frequency electrode are located on one side of the P-InP layer; the second support portion and the fourth support portion are both located on the other side of the second P-InP layer, so that the first DC electrode and the second DC electrode are located on the other side of the second P-InP layer.

11. The optical module according to claim 9, wherein, An electrical isolation region is formed between the first N-InP layer and the second N-InP layer to form electrical isolation between the first N-InP layer and the second N-InP layer; A connecting waveguide region is formed between the first quantum well layer and the second quantum well layer. One end of the connecting waveguide region is connected to the first quantum well layer, and the other end is connected to the second quantum well layer, so that the light emitted by the first quantum well layer can be transmitted to the second quantum well layer.

12. The optical module according to claim 8, wherein, The third electrical bridge spans the surface of the second P-InP layer, and a support portion is formed on the surface of the second P-InP layer to support the third electrical bridge.

13. The optical module according to claim 9, wherein, A first matching resistor is formed on the surface of the second support portion, and the first matching resistor is connected in parallel with the electro-absorption modulation region; a second matching resistor is formed on the surface of the fourth support portion, and the second matching resistor is connected in parallel with the electro-absorption modulation region.

14. The optical module according to claim 2, wherein, The refractive index of the doped layer is greater than that of the third P-InP layer, and the refractive index of the doped layer is less than that of the waveguide layer.

15. The optical module according to claim 2, wherein, The waveguide width of the first non-gradient segment is greater than the waveguide width of the second non-gradient segment.

16. The optical module according to claim 2, wherein, The waveguide layer is buried within the third P-InP layer.

17. The optical module according to claim 2, wherein, include: The first coupler is located on the output optical path of the first electroabsorption modulation region and is used to perform mode conversion on the first optical signal. The second coupler, located on the output optical path of the second electroabsorption modulation region, is used to perform mode conversion on the second optical signal; The third coupler, located in the output optical path of the third electroabsorption modulation region, is used to perform mode conversion on the third optical signal; The fourth coupler, located on the output optical path of the fourth electroabsorption modulation region, is used to perform mode conversion on the fourth optical signal.

18. The optical module according to claim 17, wherein, The laser chip includes: A first transmission waveguide connects the first end of the light-emitting area to the first beam splitter to receive the first beam into the first beam splitter. A second transmission waveguide connects the second end of the light-emitting region to the second beam splitter to guide the second beam into the second beam splitter. The second transmission waveguide includes: The first bending zone bends from the second end of the light-emitting zone toward the first end to turn the transmission direction of the second beam to the first end of the light-emitting zone, thereby placing the first beam splitter and the second beam splitter on the same side of the light-emitting zone.

19. The optical module according to claim 17, wherein, The laser chip includes: A third transmission waveguide connects the first output end of the first beam splitter to the first electro-absorption modulation region to transmit the first beam to the first electro-absorption modulation region. The third transmission waveguide includes a second bend region. A fourth transmission waveguide connects the second output end of the first beam splitter to the second electro-absorption modulation region to transmit the second beam to the second electro-absorption modulation region. The fourth transmission waveguide includes a third bending region. The third bending region and the second bending region bend toward one side of the light-emitting region to guide the second beam and the first beam to one side of the light-emitting region, respectively. The fifth transmission waveguide connects the first output end of the second beam splitter to the third electro-absorption modulation region to transmit the third beam to the third electro-absorption modulation region. The fifth transmission waveguide includes a fourth bend region. A sixth transmission waveguide connects the second output end of the second beam splitter to the fourth electro-absorption modulation region to transmit the fourth beam to the fourth electro-absorption modulation region. The sixth transmission waveguide includes a fifth bending region. The fifth bending region and the fourth bending region bend toward the other side of the light-emitting region to guide the fourth beam and the third beam to the other side of the light-emitting region, respectively.

20. The optical module according to claim 1, wherein, The light-emitting area includes a first light-emitting waveguide, a second light-emitting waveguide, a third light-emitting waveguide, and a fourth light-emitting waveguide arranged in parallel. The plurality of modulation regions include a first modulation waveguide, a second modulation waveguide, a third modulation waveguide, and a fourth modulation waveguide; The output terminal of the first light-emitting waveguide is connected to the input terminal of the first modulation waveguide, the output terminal of the second light-emitting waveguide is connected to the input terminal of the second modulation waveguide, the output terminal of the third light-emitting waveguide is connected to the input terminal of the third modulation waveguide, and the output terminal of the fourth light-emitting waveguide is connected to the input terminal of the fourth modulation waveguide. The laser chip includes: The first modulation pad is disposed above the first modulation waveguide and extends to the top of the first modulation waveguide; The second modulation pad is disposed above the second modulation waveguide and extends to the top of the second modulation waveguide; The third modulation pad is disposed above the third modulation waveguide and extends to the top of the third modulation waveguide; A fourth modulation pad is disposed above the fourth modulation waveguide and extends to the top of the fourth modulation waveguide; The first light-emitting pad is disposed above the first light-emitting waveguide; The second light-emitting pad is disposed above the second light-emitting waveguide; The third light-emitting pad is disposed above the third light-emitting waveguide; The fourth light-emitting pad is disposed above the fourth light-emitting waveguide; Wherein, the first modulation pad includes a first bonding portion, the second modulation pad includes a second bonding portion, the third modulation pad includes a third bonding portion, and the fourth modulation pad includes a fourth bonding portion; the first bonding portion and the second bonding portion are arranged side by side at the top of the space between the first modulation waveguide and the second modulation waveguide, and the third bonding portion and the fourth bonding portion are arranged side by side at the top of the space between the third modulation waveguide and the fourth modulation waveguide.

21. The optical module according to claim 20, wherein, The light-emitting end of the first modulation waveguide includes a first deflection portion, which is used to tilt the optical axis of the output light of the first modulation waveguide. The light-emitting end of the second modulation waveguide includes a second deflection portion, which is used to tilt the optical axis of the output light of the second modulation waveguide. The light-emitting end of the third modulation waveguide includes a third deflection section, which is used to tilt the optical axis of the output light of the third modulation waveguide. The light-emitting end of the fourth modulation waveguide includes a fourth deflection section, which is used to tilt the optical axis of the output light of the fourth modulation waveguide.

22. The optical module according to claim 20, wherein, The first light-emitting pad includes a first wire bonding area, the second light-emitting pad includes a second wire bonding area, the third light-emitting pad includes a third wire bonding area, and the fourth light-emitting pad includes a fourth wire bonding area. One end of the first wire bonding area is close to the end face of the chip body, one end of the second wire bonding area is close to the other end of the first wire bonding area, the third wire bonding area is located on the side of the second wire bonding area, one end of the fourth wire bonding area is close to the end face of the chip body, and the other end of the fourth wire bonding area is close to one end of the third wire bonding area.

23. The optical module according to claim 21, wherein, It also includes a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer; the first insulating layer is disposed on the side of the first modulation waveguide and supports the first modulation pad, the second insulating layer is disposed on the side of the second modulation waveguide and supports the second modulation pad, the third insulating layer is disposed on the side of the third modulation waveguide and supports the third modulation pad, and the fourth insulating layer is disposed on the side of the fourth modulation waveguide and supports the fourth modulation pad.

24. A method for fabricating a laser chip, wherein, include: An N-InP layer is grown along the surface of a substrate, and a first quantum well layer and a second quantum well layer are grown together along the surface of the N-InP layer. A grating layer is formed on the surface of the first quantum well layer. A P-InP layer is grown along the surface of the grating layer and the second quantum well layer; A first support portion, a second support portion, a third support portion and a fourth support portion are deposited on the surface of the substrate, respectively. The first support portion and the third support portion are located on one side of the P-InP layer, and the second support portion and the fourth support portion are located on the other side of the P-InP layer. A first radio frequency electrode is deposited on the surface of the first support portion, and a second radio frequency electrode is deposited on the surface of the third support portion. A first DC electrode is deposited on the surface of the second support portion, and a second DC electrode is deposited on the surface of the fourth support portion. The second electrode portion is deposited on the surface of the N-InP layer, and the transition electrode portion is deposited on the surface of the fourth support portion. A first electrical connection bridge is formed between the first radio frequency electrode and the first DC electrode, a second electrical connection bridge is formed between the second electrode portion and the transfer electrode portion, and a third electrical connection bridge is formed between the transfer electrode portion and the second radio frequency electrode. A first electrode portion is grown along the surface of the first electrical connection bridge.

25. The preparation method according to claim 24, wherein, A first electrical connection bridge is formed between the first radio frequency electrode and the first DC electrode, including: Photoresist is coated along the region between the P-InP layer and the substrate; The arched bridge surface area is formed by photolithography development; The photoresist is cured into an arc-shaped arch structure by high-temperature baking; The first radio frequency electrode, the first DC electrode, and a metal layer between the first radio frequency electrode and the first DC electrode are formed along the surface of the photoresist by metal photolithography and metal deposition, wherein the metal layer connects the first radio frequency electrode and the first DC electrode. The photoresist between the metal layer and the substrate is peeled off to form an air gap between the metal layer and the substrate, thereby forming a first electrical connection bridge between the first radio frequency electrode and the first DC electrode.

26. The preparation method according to claim 24, wherein, The preparation method includes: An electrically isolated region is formed by downward ion implantation at the interface between the first quantum well layer and the second quantum well layer. The N-InP layer is then divided into a first N-InP layer and a second N-InP layer, and the electrically isolated region is located between the first N-InP layer and the second N-InP layer. The electrically isolated region of a predetermined thickness is etched to form a connecting waveguide region on the surface of the electrically isolated region, the connecting waveguide region being located between the first quantum well layer and the second quantum well layer.

27. The preparation method according to claim 24, wherein, One end of the first electrical connection bridge is electrically connected to the first radio frequency electrode, and the other end is electrically connected to the first DC electrode; the first electrical connection bridge is electrically connected to the first electrode portion, so that the first radio frequency electrode and the first DC electrode are respectively electrically connected to the first electrode portion. One end of the second electrical connection bridge is electrically connected to the second electrode portion, and the other end is electrically connected to the transition electrode portion. The transition electrode portion is electrically connected to the second DC electrode, so that the second DC electrode is electrically connected to the second electrode portion. One end of the third electrical connection bridge is electrically connected to the adapter electrode section, and the other end is electrically connected to the second radio frequency electrode, so that the second radio frequency electrode is electrically connected to the second electrode section.

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