Information processing system, information processing method, information processing program, and characteristic information providing system

Abstract

This information processing system comprises: an acquisition unit that acquires first information pertaining to a voltage or electric field strength applied to a dielectric; an estimation unit that estimates characteristics of the dielectric on the basis of the first information using a differential simulation model that represents hysteresis in the dielectric and accounts for the position of the hysteresis; and an output unit that outputs second information pertaining to the estimated characteristics of the dielectric.

Description

Information processing system, information processing method, information processing program, and characteristic information providing system

[0001] The present disclosure relates to techniques for estimating properties of a dielectric.

[0002] Non-Patent Document 1 discloses a technique for estimating the characteristics of ferroelectrics using a differential simulation model. The differential simulation model has the advantage of having a lower calculation load than the integral simulation model described below.

[0003] However, the differential simulation model described in Non-Patent Document 1 takes into consideration the estimation of the characteristics of ferroelectrics, but does not take into consideration the estimation of the characteristics of dielectrics other than ferroelectrics. Therefore, the technique of Non-Patent Document 1 cannot obtain the characteristics of, for example, antiferroelectrics.

[0004] Maximilian Lederer, Ricardo Olivo, Nandakishor Yadav, Sourav De, Konrad Seidel, Lukas M. Eng, Thomas Kamp, “SPICE compatible semi-empirical compact model for ferroelectric hysteresis”, Solid State Electronics 199 (2023) 108501

[0005] The present disclosure provides a technique capable of estimating the characteristics of a dielectric in a general purpose manner regardless of the type of dielectric.

[0006] An information processing system in one aspect of the present disclosure includes an acquisition unit that acquires first information regarding a voltage or electric field strength applied to a dielectric, an estimation unit that estimates characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis, and an output unit that outputs second information regarding the estimated characteristics of the dielectric.

[0007] According to the present disclosure, it is possible to generally estimate the characteristics of a dielectric, regardless of the type of dielectric.

[0008] 1 is a graph showing an example of the PE characteristics of a ferroelectric material; 2 is a graph showing an example of the PE characteristics of an antiferroelectric material; 3 is a graph showing an example of the PE characteristics of a binary function R in an integral type simulation model; α，β 1 is a graph of (E). FIG. 1 is a block diagram showing the overall configuration of an estimation system 1 including an information processing system and a characteristic information providing system according to the present embodiment. FIG. 2 is a diagram showing a first image displayed on the display unit. FIG. 3 is a diagram showing a simulator image displayed on the display unit when the estimation unit operates using an electronic circuit simulator. FIG. 4 is a diagram showing an example of a second image displayed on the display unit when the estimation unit operates using an electronic circuit simulator. FIG. 5 is a flowchart showing an example operation of an information processing system. FIG. 6 is a sequence diagram showing an example operation of an entire estimation system including an information processing system. FIG. 7 is a graph showing PE characteristics in an example of the present disclosure. FIG. 8 is a graph showing impedance characteristics in an example of the present disclosure. FIG. 9 is a sequence diagram when the information processing system is provided by a device manufacturer. FIG. 10 is a sequence diagram when the information processing system is provided by a device manufacturer and a circuit simulator manufacturer.

[0009] (Findings that form the basis of the present disclosure) Some dielectrics exhibit hysteresis. Hysteresis in a dielectric refers to a phenomenon in which the polarization follows different paths when the electric field applied to the dielectric is swept in the positive direction and when it is swept in the negative direction. Dielectrics that exhibit this phenomenon include, for example, ferroelectrics and antiferroelectrics.

[0010] The presence or absence of hysteresis in a dielectric can be confirmed by the PE characteristic, which is a characteristic that indicates the relationship between polarization (P: the amount of charge stored per unit area) and electric field strength (E: the voltage applied per unit film thickness) in a dielectric.

[0011] FIG. 1 is a graph showing an example of the PE characteristic of a ferroelectric. The PE characteristic of a ferroelectric shows one hysteresis loop. When the electric field strength is swept in the positive direction, the electric field strength at which the slope of the curve (dP / dE) reaches its maximum value, dP / dEpos, is E(dP / dE=dP / dEpos). When the electric field strength is swept in the negative direction, the electric field strength at which the slope of the curve reaches its maximum value, dP / dEneg, is E(dP / dE=dP / dEneg). Then, (E(dP / dE=dP / dEpos)+E(dP / dE=dP / dEneg)) / 2=0. In other words, the ferroelectric shows continuous hysteresis with the electric field strength at zero as the center.

[0012] Fig. 2 is a graph showing an example of the PE characteristic of an antiferroelectric material. The PE characteristic of an antiferroelectric material shows two hysteresis loops. The two hysteresis loops are hysteresis loop A, which is drawn in the region where the electric field strength is positive, and hysteresis loop B, which is drawn in the region where the electric field strength is negative.

[0013] The electric field intensity at the center of the hysteresis loop A of an antiferroelectric is not zero. In other words, if the electric field intensity showing the maximum value dP / dEpos_A of the slope of the curve when the electric field intensity is swept in the positive direction is E(dP / dE=dP / dEpos_A), and the electric field intensity showing the maximum value dP / dEneg_A of the slope of the curve when the electric field intensity is swept in the negative direction is E(dP / dE=dP / dEneg_A), then (E(dP / dE=dP / dEpos_A)+E(dP / dE=dP / dEneg_A)) / 2≠0.

[0014] The electric field intensity at the center of the hysteresis loop B of an antiferroelectric is not zero. In other words, if the electric field intensity at which the slope of the curve reaches its maximum value dP / dEpos_B when the electric field intensity is swept in the positive direction is E(dP / dE=dP / dEpos_B), and the electric field intensity at which the slope of the curve reaches its maximum value dP / dEneg_B when the electric field intensity is swept in the negative direction is E(dP / dE=dP / dEneg_B), then (E(dP / dE=dP / dEpos_B)+E(dP / dE=dP / dEneg_B)) / 2≠0.

[0015] That is, as shown in FIG. 2, the antiferroelectric has a continuous hysteresis centered on a positive electric field strength and a continuous hysteresis centered on a negative electric field strength.

[0016] As simulation models capable of expressing the hysteresis of a dielectric, an integral type simulation model and a differential type simulation model are known.

[0017] The integral simulation model is a binary function R that exhibits discontinuous hysteresis. α，β By integrating (E) using an equation such as the following equation (1), the continuous hysteresis of the dielectric is expressed.

[0018]

[0019] R α，β (E) is a binary function as shown in FIG. 3, and shows discontinuous hysteresis with thresholds of E=α and β. α is the change in R α，β β indicates the threshold at which the return value of (E) changes. α，β μ(α, β) represents the threshold at which the return value of (E) changes. α，β It represents the weight of (E) and is called the distribution function.

[0020] Known representative integral simulation models include the Preisach model, the Play model, the Stop model, etc. The integral simulation model is sometimes called a Preisach-type model.

[0021] However, in the integral simulation model, a discontinuous hysteresis (R α，β Since multiple calculations of (E) are performed, the calculations tend to be complicated, and therefore this method is not suitable for estimating characteristics that require a high calculation load (for example, impedance characteristics).

[0022] On the other hand, a differential simulation model is a simulation model that includes a differential equation such as the following equation (2).

[0023]

[0024] sign(dE / dt) is a sign function for dE / dt, and returns plus 1 when dE / dt is positive and minus 1 when dE / dt is negative. In other words, dP / dE (the slope of the PE characteristic) takes different values ​​when the electric field is swept in the negative direction and when it is swept in the positive direction. Therefore, the PE characteristic obtained by solving the differential equation shown in equation (2) exhibits hysteresis.

[0025] In addition, in formula (2), the amount of charge Q may be used instead of the polarization P. In formula (2), the voltage or electric flux density D may be used instead of the electric field strength E.

[0026] Since the hysteresis obtained by solving a differential equation is continuous hysteresis, for example, the continuous hysteresis of a dielectric can be expressed using a single differential equation without using other differential equations. Therefore, the differential simulation model calculates fewer hysteresis than the integral simulation model, which calculates multiple discontinuous hysteresis. Therefore, the differential simulation model simplifies calculations and makes it easier to calculate characteristics with a high calculation load (e.g., impedance characteristics).

[0027] In other words, the use of a differential simulation model allows the PE characteristics to be calculated more quickly than the use of an integral simulation model, thereby reducing unnecessary consumption of computer resources.

[0028] In Non-Patent Document 1, the characteristics of a dielectric are estimated using a differential simulation model, but the position of hysteresis is not taken into consideration. Therefore, the technique in Non-Patent Document 1 can estimate the characteristics of a ferroelectric material having hysteresis centered around electric field strength = 0, but cannot estimate the characteristics of an antiferroelectric material.

[0029] The term "ferroelectric material having hysteresis centered at electric field strength=0" may also mean "a ferroelectric material in which the midpoint between the electric field strength at which the slope of the curve becomes maximum when the electric field strength is swept in a positive direction and the electric field strength at which the slope of the curve becomes maximum when the electric field strength is swept in a negative direction is zero" (see, for example, the PE characteristics in FIG. 1).

[0030] The reason why the differential simulation model disclosed in Non-Patent Document 1 cannot estimate the characteristics of antiferroelectrics is as follows.

[0031] The PE characteristics of an antiferroelectric material show two hysteresis loops: hysteresis loop A and hysteresis loop B. In hysteresis loop A, the midpoint between the electric field intensity at which the slope of the curve is maximum when the electric field strength is swept in the positive direction and the electric field intensity at which the slope of the curve is maximum when the electric field strength is swept in the negative direction is not zero, and in hysteresis loop B, the midpoint between the electric field intensity at which the slope of the curve is maximum when the electric field strength is swept in the positive direction and the electric field intensity at which the slope of the curve is maximum when the electric field strength is swept in the negative direction is not zero (see, for example, the PE characteristics in FIG. 2 ).

[0032] It is desirable that the differential simulation model be able to estimate not only the characteristics of ferroelectrics but also the characteristics of dielectrics other than ferroelectrics.

[0033] In view of these circumstances, the present inventors have conducted extensive research to develop an information processing system capable of estimating the characteristics of materials other than ferroelectrics by using a differential simulation model capable of expressing hysteresis in a dielectric. As a result, the present inventors have found that, by using a differential simulation model capable of expressing hysteresis in a dielectric and taking into account the position of hysteresis, it is possible to estimate the characteristics of a dielectric in a general manner regardless of the type of dielectric, and have arrived at the present disclosure.

[0034] (1) An information processing system according to one aspect of the present disclosure includes an acquisition unit that acquires first information related to a voltage or electric field strength applied to a dielectric, an estimation unit that estimates characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis, and an output unit that outputs second information related to the estimated characteristics of the dielectric.

[0035] According to this configuration, the characteristics of a dielectric are estimated using a differential simulation model that expresses hysteresis in a dielectric and takes into consideration the position of the hysteresis, so that the characteristics of a dielectric can be generally estimated regardless of the type of dielectric.

[0036] (2) In the information processing system described in (1) above, the differential simulation model may include a parameter relating to the position of the hysteresis, and the parameter may indicate the electric field intensity at the center of the hysteresis.

[0037] In this case, the position of the hysteresis is expressed by a parameter indicating the electric field strength at the center of the hysteresis, so that the characteristics of various dielectrics can be estimated by changing the position of the center of the hysteresis.

[0038] (3) In the information processing system described in (1) or (2) above, the value of the electric field strength at the center of the polarization hysteresis may be non-zero.

[0039] In this case, properties other than those of the ferroelectric material can be estimated.

[0040] (4) In the information processing system described in (1) above, the differential simulation model may include a differential equation showing the relationship between a differential value obtained by differentiating polarization with respect to electric flux density and a sign function relating to the polarization, the electric flux density, and the change in the electric flux density over time.

[0041] (5) In the information processing system described in (2) above, the differential simulation model may include a differential equation showing the relationship between a differential value obtained by differentiating polarization with respect to electric flux density, the polarization, the electric flux density, and a sign function relating to the change in the electric flux density over time, and the electric flux density may include a term for the polarization and a term for electric field strength representing the electric field strength at the center of the hysteresis.

[0042] In this case, by changing the electric field strength at the center of the hysteresis, it is possible to estimate the characteristics of various dielectric materials.

[0043] (6) An information processing method according to another aspect of the present disclosure includes: a computer acquiring first information relating to a voltage or electric field strength applied to a dielectric; estimating characteristics of the dielectric based on the first information using a differential simulation model that represents hysteresis in the dielectric and takes into account a position of the hysteresis; and outputting second information relating to the estimated characteristics.

[0044] In this case, it is possible to provide an information processing method that can generally estimate the characteristics of a dielectric material regardless of the type of dielectric material.

[0045] (7) In another aspect of the present disclosure, an information processing program causes a computer to acquire first information regarding a voltage or electric field strength applied to a dielectric, estimate characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis, and output second information regarding the estimated characteristics.

[0046] In this case, it is possible to provide an information processing program that can generally estimate the characteristics of a dielectric, regardless of the type of dielectric.

[0047] (8) In another aspect of the present disclosure, a characteristic information providing system includes a display control unit that causes a first image that accepts input of first information related to a voltage or electric field strength applied to a dielectric to be displayed on a display unit, and then causes a second image that indicates second information related to the characteristics of the dielectric that is output by inputting the first information to be displayed on the display unit, wherein the dielectric is a dielectric having hysteresis, and the characteristics of the dielectric include at least one of a PE characteristic and an impedance characteristic.

[0048] In this case, when the first information is input, a user interface is provided that presents at least one of the PE characteristics and the impedance characteristics.

[0049] (9) In the characteristic information providing system described in (8) above, the dielectric may be a dielectric in which the value of the electric field intensity at the center of the hysteresis is non-zero.

[0050] In this case, at least one of the PE characteristics and impedance characteristics of a dielectric material other than a ferroelectric material (for example, an antiferroelectric material) can be exhibited.

[0051] (10) In the characteristic information providing system described in (8) or (9) above, the first information shown in the first image may include a function relating to the voltage or electric field strength applied to the dielectric and a parameter value corresponding to the function.

[0052] In this case, it is possible to present at least one of the PE characteristics and the impedance characteristics when voltages or electric field strengths of various waveforms are applied to the dielectric.

[0053] (11) A method according to another aspect of the present disclosure includes creating an information processing program including a simulation model for estimating characteristics of a dielectric, and instructing execution of the information processing program, wherein the instructing includes acquiring first information related to a voltage or an electric field strength applied to the dielectric, estimating characteristics of the dielectric based on the first information using the simulation model, and outputting second information related to the estimated characteristics, wherein the simulation model is a differential simulation model that expresses hysteresis in the dielectric and takes into account a position of the hysteresis.

[0054] In this case, it is possible to provide a method capable of estimating the characteristics of a dielectric in a general purpose manner regardless of the type of dielectric.

[0055] Hereinafter, an information processing system, an information processing method, an information processing program, and a characteristic information providing system according to embodiments of the present disclosure will be described with reference to the drawings. However, the present disclosure is not limited to the following embodiments.

[0056] The embodiments described below are comprehensive or specific examples of the present disclosure. The numerical values, shapes, materials, components, component placement and connection configurations, steps, and step order shown in the following embodiments are examples and are not intended to limit the present disclosure. Among the components in the following embodiments, components that are not described in the independent claims that represent the highest concepts are described as optional components. Each figure is a schematic diagram and is not necessarily an exact illustration. In each figure, the same components are designated by the same reference numerals.

[0057] [Simulation Model] The following describes a simulation model used in the information processing system of the present disclosure. Fig. 4 is a block diagram showing the overall configuration of the estimation system 1 including the information processing system 10 and the characteristic information providing system 30 according to this embodiment.

[0058] The estimation unit 12 of the information processing system 10 estimates the characteristics of the dielectric using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis.

[0059] The differential simulation model is a simulation model that includes a differential equation such as the above-mentioned equation (2). The PE characteristics obtained by solving the differential equation have hysteresis.

[0060] The differential simulation model includes a parameter related to the position of hysteresis. This parameter indicates, for example, the electric field strength at the center of hysteresis. In one hysteresis loop included in the PE characteristics of a dielectric, if the electric field strength at which the slope of the curve reaches its maximum value dP / dEpos when the electric field strength is swept in the positive direction is E(dP / dE = dP / dEpos), and the electric field strength at which the slope of the curve reaches its maximum value dP / dEneg when the electric field strength is swept in the negative direction is E(dP / dE = dP / dEneg), then the electric field strength at the center of hysteresis is (E(dP / dE = dP / dEpos) + E(dP / dE = dP / dEneg)) / 2. Such a simulation model can represent a hysteresis loop centered around any electric field strength. That is, by using such a simulation model, it is possible to express the PE characteristics of dielectrics other than ferroelectrics (for example, antiferroelectrics) that exhibit a hysteresis loop centered around a non-zero electric field.

[0061] On the other hand, a conventional differential simulation model that does not take into consideration the position of hysteresis can express a hysteresis loop centered on electric field strength = 0, i.e., the PE characteristics of a ferroelectric, but cannot express the PE characteristics of an antiferroelectric that shows a hysteresis loop centered on electric field strength ≠ 0.

[0062] As described above, the differential simulation model of the present disclosure is capable of estimating the properties of dielectrics other than ferroelectrics, and is therefore more advantageous than conventional differential simulation models such as those shown in Non-Patent Document 1.

[0063] The differential simulation model of the present disclosure takes the position of hysteresis into account by adding a parameter related to the position of hysteresis to a conventional differential simulation model that does not consider the position of hysteresis. Examples of the conventional differential simulation model that can be used include the Jiles-Atherton model, the Coleman-Hodgdon model, and the Tellinen model. The differential simulation model is also sometimes called the Duhem model.

[0064] [System Configuration] As shown in FIG. 4 , the estimation system 1 includes an information processing system 10 , an input unit 20 , and a characteristic information providing system 30 .

[0065] The information processing system 10 is configured by a computer such as a personal computer or a server. The information processing system 10 may be realized by cloud computing, for example. The information processing system 10 may be configured so that all of the components are included in a single computer, or may be configured as a system in which multiple components are distributed across multiple computers.

[0066] The information processing system 10 includes an acquisition unit 11, an estimation unit 12, and an output unit 13. An input unit 20 and a characteristic information providing system 30 are connected to the information processing system 10. The input unit 20 and the characteristic information providing system 30 are each configured by an information terminal used by a user, such as a smartphone, a tablet terminal, or a personal computer.

[0067] The acquisition unit 11 to the output unit 13 may be realized by the processor of the information processing system 10 executing an information processing program stored in the memory of the information processing system 10, or may be realized by a dedicated hardware circuit.

[0068] The input unit 20 and the characteristic information providing system 30 may both be connected to the information processing system 10 via a LAN (Local Area Network) or the like, or may be connected to the information processing system 10 via a network such as the Internet.

[0069] The input unit 20 is an input interface that accepts user input. The input unit 20 is composed of, for example, a keyboard, a touch sensor, a touchpad, a mouse, etc. The input unit 20 accepts input operations by the user and outputs signals corresponding to the input operations to the information processing system 10.

[0070] In the present disclosure, the input unit 20 and the characteristic information providing system 30 are configured independently of each other, but may be configured integrally like a touch panel. In the present disclosure, the information processing system 10 does not include the input unit 20 and the characteristic information providing system 30, but may include these.

[0071] The input unit 20 receives input of first information. The first information is, for example, information about a voltage applied to the dielectric. Instead of information about the voltage, the first information may be, for example, information about the electric field strength applied to the dielectric.

[0072] The display control unit 31 causes the display unit 32 to display an image or the like based on the display data output from the output unit 13 of the information processing system 10. The display control unit 31 causes the display unit 32 to display a second image indicating second information relating to the characteristics of the dielectric that is output by inputting the first information. The second information includes at least one of the PE characteristics and the impedance characteristics.

[0073] The display unit 32 displays an image or the like under the control of the display control unit 31. The display unit 32 is, for example, but not limited to, a liquid crystal display, a plasma display, or an organic EL (Electro-Luminescence) display. The display unit 32 displays a first image that accepts input of first information related to the voltage or electric field strength applied to the dielectric. The first information displayed in the first image includes a function related to the voltage or electric field strength applied to the dielectric and a parameter value corresponding to the function.

[0074] The acquisition unit 11 acquires first information input by a user using the input unit 20. The user performs an operation to input the first information while viewing a first image 500 displayed on the display unit 32 and accepting input of the first information.

[0075] The estimation unit 12 estimates the characteristics of the dielectric based on the first information acquired by the acquisition unit 11, using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis (hereinafter referred to as the present differential simulation model). The estimation unit 12 generates second information regarding the estimated characteristics of the dielectric. The estimation unit 12 executes a simulation program including the present differential simulation model, and generates the second information based on the execution results. The user performs an operation to execute the simulation program while viewing a simulator image 600 ( FIG. 6 ) described below displayed on the display unit 32. Details of the processing executed by the estimation unit 12 will be described later. The simulation program is included in the information processing program of the present disclosure.

[0076] The simulation program may be written in numerical analysis software or a programming language such as MATLAB (registered trademark), Mathematica (registered trademark), Maple (registered trademark), C language, C++, Java (registered trademark), Python (registered trademark), Julia, etc. The simulation program may be written in the form of a block diagram input into a numerical analysis simulator such as MATLAB & Simulink (registered trademark). The simulation program may be written in the form of an electronic circuit diagram input into an electronic circuit simulator such as LTspice (registered trademark), PSpice (registered trademark), HSPICE (registered trademark), or SIMetrix (registered trademark).

[0077] As shown in equation (10) below, this differential simulation model includes a differential equation that shows the relationship between the differential value obtained by differentiating polarization P with electric flux density D, and the sign function of polarization P, electric flux density D, and the change in electric flux density over time (dD / dt). As shown in equation (6) below, this electric flux density D includes a term for polarization P and a term for electric field strength (Ec) that represents the electric field strength at the center of hysteresis.

[0078] The output unit 13 outputs display data for displaying an image on the display unit 32 to the display control unit 31, thereby displaying the image on the display unit 32. The output unit 13 outputs the second information generated by the estimation unit 12. The output unit 13 outputs the second information by displaying a second image indicating the second information generated by the estimation unit 12 on the display unit 32. By looking at the second image displayed on the display unit 32, the user can visually understand the second information indicating the estimated characteristics of the dielectric.

[0079] [Example of Use] An example of use of the information processing system 10 according to the embodiment will be described below. Fig. 5 is a diagram showing a first image 500 displayed on the display unit 32.

[0080] The user performs an operation to input first information while viewing the first image 500. The first image 500 is an image that accepts input of the first information. The first image 500 includes a function input field 510, a parameter input field 520, a cancel button 530, and a confirm button 540. The function input field 510 and the parameter input field 520 are input fields for inputting the first information related to the voltage applied to the dielectric.

[0081] When the information processing system 10 operates using an electronic circuit simulator, the first image 500 is displayed by, for example, selecting a power supply on an electronic circuit diagram.

[0082] The function input field 510 is a field for selecting a function that indicates the waveform of the voltage applied to the dielectric, and includes check boxes for selecting a function.

[0083] The parameter input field 520 is a field for inputting parameter values ​​related to the selected function. The parameter input field 520 includes a text box for inputting the parameter values. The acquisition unit 11 acquires the selected function and the input parameter values ​​for the first image 500 as first information.

[0084] The function input field 510 includes check boxes for selecting, for example, no function (constant), pulse function (pulse wave), sine function (sine wave), PWL function (PWL: Piece-Wise Linear, PWL wave), and external file.

[0085] If no function is selected, the parameter input field 520 displays, for example, a text box for inputting the DC bias Vdc.

[0086] When a pulse function is selected, the parameter input field 520 displays text boxes for inputting, for example, an off voltage Voff, an on voltage Von, a delay time Tdelay, a rise time Trise, a fall time Tfall, an on time Ton (the time during which the voltage is on), a period Tperiod, and a number of repetitions N.

[0087] When a sine function is selected, the parameter input field 520 displays text boxes for inputting, for example, a DC bias Vdc, an amplitude Vamp, a frequency f, a delay time Tdelay, a phase Phi, and a number of repetitions N.

[0088] When the PWL function is selected, the parameter input field 520 displays a text box for inputting, for example, the time tn at point n and the voltage Vn at point n, allowing the user to input an arbitrary waveform such as a triangular wave as the first information.

[0089] When an external file is selected, the parameter input field 520 displays a box for inserting a file containing data on, for example, time tn at point n and voltage Vn at point n, allowing the user to input waveforms such as experimentally measured data as the first information.

[0090] Next, the user performs an operation to instruct execution of the simulation program while viewing the simulator image displayed on the display unit 32. The simulator image is capable of accepting an instruction to execute the simulation program. Specifically, the simulator image includes an execution button for accepting an instruction to execute the simulation program.

[0091] 6 is a diagram showing a simulator image 600 displayed on the display unit 32 when the estimating unit 12 operates using an electronic circuit simulator. The simulator image 600 includes an execution button 610, a viewer button 620, an end button 630, and an electronic circuit diagram field 640.

[0092] The run button 610 accepts an instruction to run a simulation program described using an electronic circuit diagram in the electronic circuit diagram field 640. The viewer button 620 accepts an instruction to display the execution results of the simulation program. When the viewer button 620 is pressed, the display control unit 31 displays the second image 700 on the display unit 32. The end button 630 accepts an instruction to end the simulation. When the end button 630 is pressed, the output unit 13 ends the simulation. The electronic circuit diagram field 640 accepts an instruction to input an electronic circuit diagram to be simulated.

[0093] In this example, the electronic circuit diagram field 640 displays an electronic circuit diagram 645. The electronic circuit diagram 645 shows an electronic circuit in which a power supply 641 and a capacitor 642 are connected by a line 644. The capacitor 642 is composed of a dielectric whose characteristics are to be estimated and two electrodes that sandwich the dielectric. The power supply 641 inputs a voltage to the capacitor 642 that is defined by the first information input in the first image 500. The positive electrode of the power supply 641 is connected to one end of the capacitor 642, and the negative electrode of the power supply 641 is connected to a reference potential 643 and the other end of the capacitor 642.

[0094] When the execute button 610 is pressed, the estimation unit 12 estimates the characteristics of the dielectric and generates second information indicating the estimated characteristics of the dielectric. That is, the estimation unit 12 estimates the characteristics of the dielectric by applying the voltage or electric field strength indicated in the first information to the electronic circuit indicated by the electronic circuit diagram 645.

[0095] The user can visually understand the second information by looking at the second image displayed on the display unit 32. The second image is an image showing the second information generated by the estimation unit 12. Specifically, the second image includes a graph showing the estimated characteristics of the dielectric generated as the second information.

[0096] In the case of an information processing system that operates using an electronic circuit simulator, the second image is displayed by, for example, selecting a viewer button 620 on the electronic circuit simulator. Fig. 7 is a diagram showing an example of a second image 700 that is displayed on the display unit 32 when the estimation unit 12 operates using the electronic circuit simulator.

[0097] 7 , the second image 700 displays second information indicating the estimated characteristics of the dielectric. In this example, the estimation unit 12 generates the PE characteristics and the impedance characteristics as the second information. Therefore, the second image 700 displays a PE characteristics display field 710 and an impedance characteristics display field 720.

[0098] The PE characteristic display field 710 displays a graph showing the PE characteristics. In the PE characteristic display field 710, the vertical axis represents polarization P, and the horizontal axis represents electric field strength E. In this example, the PE characteristic display field 710 displays the PE characteristics of an antiferroelectric material having a continuous hysteresis centered on a positive electric field strength and a continuous hysteresis centered on a negative electric field strength.

[0099] The impedance characteristic display field 720 displays a graph showing the impedance characteristic. In the impedance characteristic display field 720, the vertical axis represents the absolute value of the impedance (|Z|) and the horizontal axis represents the frequency f. In this example, the impedance characteristic display field 720 displays the impedance characteristic of the antiferroelectric material having the PE characteristic shown in the PE characteristic display field 710.

[0100] First, the second image 700 displays a default graph with undefined graph axes. Next, the user specifies parameters for the vertical and horizontal axes of the default graph. This allows the user to specify the characteristics to be displayed in the second image 700.

[0101] Specifically, when an operation is input to designate the vertical axis as polarization and the horizontal axis as electric field strength, the second image 700 displays PE characteristics. On the other hand, when an operation is input to designate the vertical axis as the absolute value of impedance and the horizontal axis as frequency, the second image 700 displays impedance characteristics (Bode diagram).

[0102] [Operation Example] The following describes the operation of the information processing system 10. Fig. 8 is a flowchart showing an operation example of the information processing system 10.

[0103] <Step S101> The acquisition unit 11 acquires first information. As already described, the first information is information relating to the voltage or electric field strength applied to the dielectric. The user inputs the first information by inputting or selecting various pieces of information using the input unit 20 while viewing the first image 500. In this way, the acquisition unit 11 acquires the first information. Note that the acquisition unit 11 may acquire original data input by the user using the input unit 20 as the first information without referring to the first image 500.

[0104] <Step S102> The estimation unit 12 executes a process of estimating the characteristics of the dielectric based on the first information acquired in step S102. The estimated characteristics of the dielectric are, for example, the PE characteristics and the impedance characteristics. The estimation unit 12 estimates the characteristics of the dielectric based on the first information using this differential simulation model. The estimation unit 12 generates second information indicating the estimated characteristics of the dielectric.

[0105] <Step S103> The output unit 13 executes a process of outputting the second information generated in step S102. Here, the output unit 13 outputs display data of a second image 700 indicating the second information generated by the estimation unit 12 to the display control unit 31 of the characteristic information providing system 30. The display control unit 31 generates the second image 700 using this display data, and displays the generated second image 700 on the display unit 32. In this way, the second information is output.

[0106] An example of the overall operation of the estimation system 1 including the information processing system 10 will be described below. FIG. 9 is a sequence diagram showing an example of the overall operation of the estimation system 1 including the information processing system 10.

[0107] <Step S201> The input unit 20 accepts input of first information. Here, the user inputs the first information using the input unit 20 while looking at the first image 500 displayed on the display unit 32.

[0108] <Step S202 > The acquisition unit 11 of the information processing system 10 acquires the first information received by the input unit 20 .

[0109] <Step S203> The estimation unit 12 of the information processing system 10 executes a simulation program including the present differential simulation model based on the first information acquired by the acquisition unit 11.

[0110] <Step S204> The estimation unit 12 of the information processing system 10 generates second information indicating the estimated characteristics of the dielectric based on the execution result of the simulation program.

[0111] <Step S205 > The output unit 13 outputs display data of the second image 700 indicating the second information to the display control unit 31 of the characteristic information providing system 30.

[0112] <Step S206 > The display control unit 31 of the characteristic information providing system 30 generates a second image 700 indicating the second information using the display data output from the output unit 13, and displays the generated second image 700 on the display unit 32.

[0113] [Example of Processing Flow] An example of a processing flow when the provider of the information processing system 10 is a device manufacturer will be described below. The device manufacturer is a manufacturer that manufactures and sells devices that use dielectric materials. Fig. 12 is a sequence diagram when the provider of the information processing system 10 is a device manufacturer.

[0114] <Step S301> The user selects a simulator to use from among the electronic circuit simulators provided by the information processing system 10 (device manufacturer). The list of electronic circuit simulators provided by the information processing system 10 (device manufacturer) is posted, for example, on the device manufacturer's website, linked to a page describing the device's product by a URL link or the like. The user selects the electronic circuit simulator to use, for example, while viewing the website.

[0115] <Step S302> The information processing system 10 (device manufacturer) displays a simulator image 600 of the electronic circuit simulator selected by the user in step S301 on the display unit 32. The simulator image 600 may be displayed on a browser or on a desktop application installed on a computer.

[0116] <Step S303> The user selects a model to use from among the simulation models provided by the device manufacturer. A list of simulation models provided by the device manufacturer may be displayed on the homepage of the device manufacturer, or may be included in the simulator image 600. The user selects the simulation model to use while looking at the homepage or simulator image 600.

[0117] <Step S304> The information processing system 10 (device manufacturer) generates a simulation program (electronic circuit diagram) using the simulation model selected by the user in step S303. The simulation program may be generated by incorporating the simulation model selected in step S303 into the electronic circuit diagram specified by the simulator selected in step S301. The generated simulation program (electronic circuit diagram) is displayed in the electronic circuit diagram field 640 of the simulator image 600.

[0118] <Step S305> The user instructs display of a first image 500 that accepts input of first information. The instruction is executed by selecting a power supply on an electronic circuit diagram included in a simulator image 600. The simulator image 600 may include a button for displaying the first image 500, in which case the instruction is executed by selecting the button. The simulator image 600 may include the first image 500, in which case the operation of step S305 is unnecessary.

[0119] <Step S306> The information processing system 10 (device manufacturer) displays the first image 500 specified by the user in step S305 on the display unit 32. The first image 500 may be displayed on a browser or on a desktop application installed on a computer.

[0120] <Step S307> The user inputs the first information while looking at the first image 500 displayed on the display unit 32.

[0121] <Step S308> The information processing system 10 (device manufacturer) causes the input unit 20 to accept the first information input by the user in step S307.

[0122] <Step S309> The information processing system 10 (device manufacturer) causes the acquisition unit 11 of the information processing system 10 to acquire the first information received in step S308.

[0123] <Step S310> The user instructs the execution of the simulation program by selecting the execution button 610 included in the simulator image 600.

[0124] <Step S311> The information processing system 10 (device manufacturer) causes the estimation unit 12 of the information processing system 10 to execute the simulation program instructed by the user in step S310.

[0125] <Step S312> The information processing system 10 (device manufacturer) causes the estimation unit 12 of the information processing system 10 to generate second information based on the execution result of step S311.

[0126] <Step S313> The information processing system 10 (device manufacturer) causes the output unit 13 of the information processing system 10 to output display data of the second image 700 indicating the second information generated in step S312.

[0127] <Step S314> The user instructs display of the second image 700 indicating the second information. The instruction is executed by selecting the viewer button 620 included in the simulator image 600. The simulator image 600 may include the second image 700, in which case the operation of step S314 is not necessary.

[0128] <Step S315> The information processing system 10 (device manufacturer) displays the second image 700 specified by the user in step S314 on the display unit 32. The second image 700 may be displayed on a browser or on a desktop application installed on a computer.

[0129] <Step S316> The user looks at the second image 700 displayed on the display unit 32 and visually understands the second information.

[0130] <Step S317> The user instructs the simulation to end by selecting the end button 630 included in the simulator image 600.

[0131] <Step S318> The information processing system 10 (device manufacturer) executes the end of the simulation instructed by the user in step S317.

[0132] An example of the process flow when the information processing system 10 is provided by a device manufacturer and a circuit simulator manufacturer will be described below. The circuit simulator manufacturer is a manufacturer that provides an electronic circuit simulator. Fig. 13 is a sequence diagram when the information processing system 10 is provided by a device manufacturer and a circuit simulator manufacturer.

[0133] <Step S401> The user selects a simulator to use from among the electronic circuit simulators provided by the server of the circuit simulator manufacturer. A list of electronic circuit simulators provided by the server of the circuit simulator manufacturer is displayed, for example, on the homepage of the circuit simulator manufacturer. The user selects the electronic circuit simulator to use while viewing, for example, the homepage.

[0134] <Step S402> The server of the circuit simulator manufacturer displays a simulator image 600 of the electronic circuit simulator selected by the user in step S401 on the display unit 32. The simulator image 600 may be displayed on a browser or on a desktop application installed on a computer.

[0135] <Step S403> The user selects a model to use from among the simulation models provided by the device manufacturer's server. A list of simulation models provided by the device manufacturer's server is displayed, for example, on the device manufacturer's homepage. The user selects the simulation model to use while viewing the homepage.

[0136] <Step S404> The device manufacturer's server transmits the simulation model selected by the user in step S403 to the user terminal.

[0137] <Step S405> The user generates a simulation program (electronic circuit diagram) using the simulation model transmitted in step S404. The simulation program may be generated by creating an electronic circuit diagram including the simulation model selected in step S403 using the simulator selected by the user in step S401. The generated simulation program (electronic circuit diagram) is displayed in the electronic circuit diagram field 640 of the simulator image 600.

[0138] <Step S406> The user instructs display of a first image 500 that accepts input of first information. The instruction is executed by selecting a power supply on an electronic circuit diagram included in a simulator image 600. The simulator image 600 may include a button for displaying the first image 500, in which case the instruction is executed by selecting the button. The simulator image 600 may include the first image 500, in which case the operation of step S406 is unnecessary.

[0139] <Step S407> The server of the circuit simulator manufacturer displays the first image 500 specified by the user in step S406 on the display unit 32. The first image 500 may be displayed on a browser or on a desktop application installed on a computer.

[0140] <Step S408> The user inputs the first information while looking at the first image 500 displayed on the display unit 32.

[0141] <Step S409> The server of the circuit simulator manufacturer causes the input unit 20 to accept the first information input by the user in step S408.

[0142] <Step S410> The server of the circuit simulator manufacturer causes the acquisition unit 11 of the information processing system 10 to acquire the first information received in step S409.

[0143] <Step S411> The user instructs the execution of the simulation program by selecting the execution button 610 included in the simulator image 600.

[0144] <Step S412> The server of the circuit simulator manufacturer causes the estimation unit 12 of the information processing system 10 to execute the simulation program instructed by the user in step S411.

[0145] <Step S413> The server of the circuit simulator manufacturer causes the estimation unit 12 of the information processing system 10 to generate second information based on the execution result of step S412.

[0146] <Step S414> The server of the circuit simulator manufacturer causes the output unit 13 of the information processing system 10 to output display data of the second image 700 indicating the second information generated in step S413.

[0147] <Step S415> The user instructs display of the second image 700 indicating the second information. The instruction is executed by selecting the viewer button 620 included in the simulator image 600. The simulator image 600 may include the second image 700, in which case the operation of step S415 is not necessary.

[0148] <Step S416> The server of the circuit simulator manufacturer displays the second image 700 specified by the user in step S415 on the display unit 32. The second image 700 may be displayed on a browser or on a desktop application installed on a computer.

[0149] <Step S417> The user looks at the second image 700 displayed on the display unit 32 and visually understands the second information.

[0150] <Step S418> The user instructs the simulation to end by selecting the end button 630 included in the simulator image 600.

[0151] <Step S419> The server of the circuit simulator manufacturer causes the output unit 13 of the information processing system 10 to end the simulation instructed by the user in step S418.

[0152] As described above, in this embodiment, the characteristics of a dielectric are estimated using a differential simulation model that expresses hysteresis in a dielectric and takes into account the position of the hysteresis. Therefore, it is possible to estimate the characteristics of a dielectric in a general manner regardless of the type of dielectric. In this embodiment, since a differential simulation model is used, it is possible to calculate the PE characteristics with a lower calculation load than when an integral simulation model is adopted. This makes it possible to calculate the impedance characteristics, which require a high calculation load, together with the PE characteristics.

[0153] [Examples] The present disclosure will be described below with reference to examples, although the present disclosure is not limited to the following examples.

[0154] [Simulation Model] The simulation model used in this example will be described below. In this example, a simulation model formed by the following equations (3) to (7) was used.

[0155]

[0156] P ｉｒｒ is irreversible polarization, P ａｎｈ is the reversible polarization, D is the electric flux density, D ｅｆｆ is the effective electric flux density, an internal variable calculated from equations (3) to (7). ０ is the relative permittivity of vacuum, and ε ０ = 8.85 * 10 －１２ F / m ２ is.

[0157] c, P ｓ , γ, k, and α are parameters, where c=0.04 and Ps=47.2 μC / cm ２ , γ=17.4μC / cm ２ , k=20.4μC / cm ２ , α=0.7.

[0158] Ec is a parameter that represents the electric field strength at the center of hysteresis, and here, Ec=3000 MV / cm.

[0159] Hereinafter, the simulation model of this embodiment will be referred to as the present differential type simulation model.

[0160] When equation (3) is differentiated by the electric flux density D, equation (3) is expressed as the following equation (8). ａｎｈ / dD ｅｆｆ is expressed as the following equation (9).

[0161]

[0162] dP in the first term of equation (8) ｉｒｒ / dD is a function of sign(dD / dt) from equation (4). ａｎｈ / dD ｅｆｆ From equation (9), the effective electric flux density D ｅｆｆ The effective electric flux density D ｅｆｆis a function of the electric flux density D and polarization P according to equation (7), so the second term of equation (8) is dP ａｎｈ / dD ｅｆｆ can be understood to be a function of the electric flux density D and the polarization P.

[0163] From the above, dP / dD in equation (8) is a function of polarization P, electric flux density D, and sign(dD / dt). In other words, the simulation model of this embodiment can be understood as including the differential equation of equation (10) below.

[0164]

[0165] Therefore, the simulation model of this embodiment is a differential simulation model. As described above, the simulation model of this embodiment includes a parameter (Ec in equation (6)) that represents the electric field strength at the hysteresis center, and the position of the hysteresis is taken into consideration. Therefore, the simulation model of this embodiment is a differential simulation model.

[0166] [Estimation of Characteristics] Hereinafter, the estimation results of the PE characteristics and the impedance characteristics estimated by the information processing system 10 to which the simulation model of this embodiment is applied will be described.

[0167] In the estimation of the PE characteristics, a triangular wave of electric field strength was input as the first information. Here, a triangular wave with a DC bias of 3000 MV / cm, an amplitude of 1000 MV / cm, and a frequency of 0.25 Hz was used. The output unit 13 output, as the second information, the PE characteristics estimated by the estimation unit 12 in the second cycle of the triangular wave, plotted with the polarization on the vertical axis and the electric field strength on the horizontal axis.

[0168] In estimating the impedance characteristics, a sine wave of electric field strength was input as the first information. Here, a sine wave with a DC bias of 3000 MV / cm, an amplitude of 1000 MV / cm, and a frequency in the range of 100 kHz to 1 Hz was used. The estimation unit 12 time-differentiated the calculated polarization to convert it into a current density, which was then multiplied by the area of ​​the dielectric to convert it into a current. The estimation unit 12 multiplied the input electric field strength by the thickness of the dielectric to convert it into a voltage. Here, the area of ​​the dielectric was 1 cm ２The thickness of the dielectric was set to 100 μm. The estimation unit 12 calculated the impedance using the single sine correlation (SSC) method, which is the same as that used in commercially available frequency response analyzers (FRAs). The impedance is the ratio of voltage to current. The output unit 13 output, as second information, an impedance characteristic (Bode diagram) in which the absolute value of the calculated impedance is on the vertical axis and frequency is on the horizontal axis.

[0169] FIG. 10 is a graph showing PE characteristics in an example of the present disclosure. As shown in FIG. 10, the PE characteristics estimated in this example have a hysteresis centered around a positive electric field of 3000 MV / cm. An antiferroelectric exhibits two hysteresis modes, namely, a hysteresis centered around a positive electric field strength and a hysteresis centered around a negative electric field strength. The PE characteristics estimated in this example correspond to the hysteresis centered around a positive electric field, of the two hysteresis modes exhibited by antiferroelectrics. Therefore, it can be seen that the information processing system of this example can estimate characteristics other than those of ferroelectrics.

[0170] FIG. 11 is a graph showing impedance characteristics in an example of the present disclosure. As shown in FIG. 11, the impedance characteristics estimated in this example have a linear shape that rises to the left. When the contribution of the capacitive component is dominant, the impedance characteristics generally become a linear shape that rises to the left. Therefore, the impedance characteristics estimated in this example can be understood as an estimate of the impedance characteristics of the capacitive component of the dielectric.

[0171] However, information regarding the hysteresis of the dielectric cannot be directly obtained from the impedance characteristics. Therefore, by comparing the relative dielectric constants calculated from the PE characteristics and the impedance characteristics, it is shown that the impedance characteristics shown in Fig. 11 correspond to the impedance characteristics shown in Fig. 10.

[0172] Relative permittivity ε ｒ is an index that indicates the ease with which a dielectric accumulates charge. In dielectrics such as antiferroelectrics that exhibit hysteresis, the relative permittivity ε ｒGenerally, the dielectric constant depends on the DC bias and amplitude of the input electric field. In the estimation of the PE characteristics and impedance characteristics in this embodiment, the DC bias and amplitude of the input triangular wave and sine wave are the same. Therefore, the dielectric constants calculated from the PE characteristics and impedance characteristics estimated in this embodiment should, in principle, be the same.

[0173] Therefore, the relative permittivity was calculated from each of the PE characteristics and impedance characteristics estimated in this example, and compared. The permittivity was calculated from the PE characteristics using the following formula (11). The permittivity was calculated from the impedance characteristics using the following formulas (12) and (13).

[0174]

[0175] ΔP is the amount of change in polarization (= maximum value of polarization - minimum value of polarization), ΔE is the amount of change in electric field strength (= maximum value of electric field strength - minimum value of electric field strength), C is the capacitance of the dielectric, S is the surface area of ​​the dielectric, and d is the film thickness of the dielectric.

[0176] The relative permittivity calculated from the PE characteristics and impedance characteristics estimated in this example were the same value, as shown in Table 1. Therefore, it can be understood that the impedance characteristics shown in FIG. 11 correspond to the PE characteristics shown in FIG. 10. In other words, the impedance characteristics shown in FIG. 11 represent the impedance characteristics of an antiferroelectric having the PE characteristics shown in FIG. 10. Therefore, the information processing system 10 of this example can estimate the characteristics of a dielectric that imposes a high calculation load, such as the impedance characteristics.

[0177]

[0178] The present disclosure can employ the following modifications.

[0179] (1) The present disclosure may estimate at least one of the PE characteristics and the impedance characteristics as the characteristics of the dielectric.

[0180] (2) In the present disclosure, the parameter related to the position of hysteresis may be the electric field strength at a characteristic position other than the center of hysteresis. The characteristic position may be, for example, the tip or inflection point of hysteresis.

[0181] (3) In the present disclosure, the parameter related to the hysteresis position may be a voltage at a characteristic position of the hysteresis. The voltage at the characteristic position may be, for example, a voltage at the center of the hysteresis, a voltage at the tip, or a voltage at an inflection point.

[0182] (Other) (1) In the present disclosure, “at least one selected from the group consisting of A1 and A2” may be interpreted as “A1,” “A2,” or “A1 and A2.”

[0183] (2) The aspects of the information processing system, etc. in the present disclosure are not limited to the above disclosure. The present disclosure includes embodiments and / or examples obtained by applying various modifications to the disclosure that a person skilled in the art would conceive, as well as embodiments and / or examples realized by arbitrarily combining the components and / or functions in the above disclosure within the scope of the present disclosure.

[0184] The information processing system of the present disclosure is advantageous in that it uses a differential simulation model that can express hysteresis in a dielectric to estimate the characteristics of a dielectric in a general manner regardless of the type of dielectric.

[0185] 10: Information processing system 11: Acquisition unit 12: Estimation unit 13: Output unit 20: Input unit 30: Characteristics information providing system 31: Display control unit 32: Display unit 500: First image 700: Second image 710: PE characteristics display field 720: Impedance characteristics display field

Claims

1. An information processing system comprising: an acquisition unit that acquires first information related to a voltage or electric field strength applied to a dielectric; an estimation unit that estimates characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis; and an output unit that outputs second information related to the estimated characteristics of the dielectric.

2. The information processing system according to claim 1, wherein the differential simulation model includes a parameter relating to the position of the hysteresis, the parameter indicating the electric field intensity at the center of the hysteresis.

3. The information processing system according to claim 2, wherein the value of the electric field strength at the center of the hysteresis is non-zero.

4. The information processing system according to claim 1, wherein the differential simulation model includes a differential value obtained by differentiating polarization with respect to electric flux density, and a differential equation showing the relationship between the polarization, the electric flux density, and a sign function relating to the change in the electric flux density over time.

5. The information processing system of claim 2, wherein the differential simulation model includes a differential equation showing the relationship between a differential value obtained by differentiating polarization with respect to electric flux density, the polarization, the electric flux density, and a sign function relating to the change in the electric flux density over time, and the electric flux density includes a term for the polarization and a term for electric field strength representing the electric field strength at the center of the hysteresis.

6. An information processing method, comprising: a computer acquiring first information relating to a voltage or electric field strength applied to a dielectric; estimating characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis; and outputting second information relating to the estimated characteristics.

7. An information processing program that causes a computer to execute the following steps: acquire first information related to the voltage or electric field strength applied to a dielectric; estimate characteristics of the dielectric based on the first information using a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis; and output second information related to the estimated characteristics.

8. A characteristic information providing system comprising: a display control unit that displays, on a display unit, a first image that accepts input of first information related to a voltage or electric field strength applied to a dielectric; and then causes the display unit to display, on the display unit, a second image that shows second information related to the characteristics of the dielectric that is output by inputting the first information; the dielectric is a dielectric having hysteresis; and the characteristics of the dielectric include at least one of a PE characteristic and an impedance characteristic.

9. The characteristic information providing system according to claim 8, wherein the dielectric is a dielectric in which the value of the electric field intensity at the center of the hysteresis is non-zero.

10. A characteristic information providing system according to claim 8 or 9, wherein the first information shown in the first image includes a function relating to the voltage or electric field strength applied to the dielectric and parameter values ​​corresponding to the function.

11. A method, the method comprising: creating an information processing program including a simulation model for estimating characteristics of a dielectric; and instructing execution of the information processing program, the instructing including: acquiring first information regarding a voltage or electric field strength applied to the dielectric; estimating characteristics of the dielectric based on the first information using the simulation model; and outputting second information regarding the estimated characteristics, the simulation model being a differential simulation model that expresses hysteresis in the dielectric and takes into account the position of the hysteresis.

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