Method for manufacturing heterogeneous integrated filter, and heterogeneous integrated filter

Abstract

The present application relates to the technical field of filters, and provides a method for manufacturing a heterogeneous integrated filter, and a heterogeneous integrated filter. The method for manufacturing a heterogeneous integrated filter comprises: providing a capacitor on a substrate; providing an acoustic device on the substrate; electrically connecting the acoustic device to the capacitor; providing an inductor on the acoustic device and / or the capacitor; and providing cavities on both sides of the acoustic device in the thickness direction of the substrate to form a heterogeneous integrated filter. The heterogeneous integrated filter can simultaneously support large bandwidth and high out-of-band suppression, and improve the integration level.

Description

Manufacturing method of heterogeneous integrated filter and heterogeneous integrated filter

[0001] Cross-reference to Related Applications

[0002] This application claims priority to the Chinese patent application No. 202410711750.3, filed on June 4, 2024, and entitled "Manufacturing method of heterogeneous integrated filter and heterogeneous integrated filter", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of filter, in particular, to a manufacturing method of heterogeneous integrated filter and a heterogeneous integrated filter. BACKGROUND

[0004] Before 4G communication technology and 4G communication technology, due to the relatively narrow width of the frequency band definition, according to the requirements of the radio frequency system, the selection of electromagnetic or acoustic filter can meet the performance requirements. But after entering the 5G, 6G and Wi-Fi7 stage, the frequency band definition specification has undergone major changes, all frequency bands are defined as more than 500MHz of large bandwidth, and the frequency band spacing is gradually narrowed, rigidly requiring filters that can support large bandwidth and high out-of-band suppression at the same time. The original traditional electromagnetic filter and acoustic filter cannot meet the requirements.

[0005] SUMMARY

[0006] The purposes of the present application include, for example, providing a manufacturing method of heterogeneous integrated filter, which can support large bandwidth and high out-of-band suppression at the same time, and improve the integration.

[0007] The purposes of the present application also include providing a heterogeneous integrated filter, which can support large bandwidth and high out-of-band suppression at the same time, and improve the integration.

[0008] The present application can be implemented as follows:

[0009] In a first aspect, the present application provides a manufacturing method of heterogeneous integrated filter, comprising:

[0010] Providing a capacitor on a substrate;

[0011] Providing an acoustic device on the substrate;

[0012] Electrically connecting the acoustic device and the capacitor;

[0013] Providing an inductor on the acoustic device and / or the capacitor;

[0014] Cavities are formed on both sides of the acoustic device along the thickness direction of the substrate to form a heterogeneous integrated filter.

[0015] Optionally, the step of disposing the acoustic device on the substrate comprises:

[0016] A first sacrificial layer is disposed on the substrate;

[0017] A first electrode layer is deposited on the first sacrificial layer;

[0018] A piezoelectric material film layer is deposited on the first electrode layer;

[0019] A first dielectric layer is deposited on the capacitor and the piezoelectric material film layer, such that the first dielectric layer is flush with the top of the piezoelectric material film layer;

[0020] A first via hole is formed on the first dielectric layer towards the substrate to the surface of the capacitor and filled with metal in the first via hole;

[0021] A second electrode layer is deposited on the top of the piezoelectric material film layer.

[0022] Optionally, the step of electrically connecting the acoustic device and the capacitor comprises:

[0023] A first barrier layer is deposited on the first dielectric layer, such that the first via hole is exposed to the first barrier layer;

[0024] An interconnection line is disposed on the top of the first via hole and the second electrode layer, such that the capacitor is electrically connected to the second electrode layer.

[0025] Optionally, the step of disposing an inductor on the acoustic device and / or the capacitor comprises:

[0026] A second dielectric layer is deposited on the first barrier layer and the second electrode layer, such that the second dielectric layer is flush with the top of the interconnection line;

[0027] A second barrier layer is deposited on the second dielectric layer;

[0028] An inductor is disposed on the second barrier layer and electrically connected to the interconnection line.

[0029] Optionally, the step of depositing a second barrier layer on the second dielectric layer comprises:

[0030] A second sacrificial layer is formed on the part of the second dielectric layer above the second electrode layer;

[0031] A second barrier layer is deposited on the second dielectric layer, such that the second sacrificial layer is enclosed between the second barrier layer and the second electrode layer.

[0032] Optionally, the cavities include first cavities and second cavities, the cavities are arranged on both sides of the acoustic device along the thickness direction of the substrate, and the step of forming the heterogeneous integrated filter includes:

[0033] depositing a third dielectric layer on the second barrier layer;

[0034] depositing a third barrier layer on the third dielectric layer;

[0035] passing through the third barrier layer and the third dielectric layer to the inductor surface towards the substrate;

[0036] removing the first sacrificial layer to form the first cavities, and removing the second sacrificial layer to form the second cavities.

[0037] Optionally, the capacitor includes a metal-insulator-metal capacitor or a three-dimensional capacitor.

[0038] Optionally, the substrate includes oppositely arranged first and second substrates, and the method for manufacturing the heterogeneous integrated filter includes:

[0039] arranging a capacitor on the first substrate;

[0040] arranging an acoustic device on the second substrate;

[0041] bonding the acoustic device and the first substrate;

[0042] electrically connecting the acoustic device and the capacitor;

[0043] arranging an inductor on the acoustic device and / or the capacitor;

[0044] arranging cavities on both sides of the acoustic device along the thickness direction of the first substrate or the second substrate to form a heterogeneous integrated filter.

[0045] Optionally, the cavities include third cavities and fourth cavities, the cavities are arranged on both sides of the acoustic device along the thickness direction of the first substrate or the second substrate, and the step of forming the heterogeneous integrated filter includes:

[0046] arranging third cavities on the first substrate and fourth cavities on the second substrate to form a heterogeneous integrated filter.

[0047] In a second aspect, the application further provides a heterogeneous integrated filter, including a substrate, a capacitor, an acoustic device, and an inductor, the capacitor and the acoustic device are arranged on the substrate, the capacitor and the acoustic device are electrically connected, the inductor is arranged on the acoustic device and / or the capacitor, and cavities are arranged on both sides of the acoustic device along the thickness direction of the substrate.

[0048] The manufacturing method of the heterogeneous integrated filter and the beneficial effects of the heterogeneous integrated filter of the present application include, for example: in order to be able to support large bandwidth and high out-of-band suppression at the same time, and improve the integration degree, a manufacturing method of a heterogeneous integrated filter is designed, which forms the heterogeneous integrated filter by setting a capacitor and an acoustic device on a substrate, electrically connecting the capacitor and the acoustic device, setting an inductor on the capacitor and / or the acoustic device, and finally setting cavities on both sides of the acoustic device along the thickness direction of the substrate. The heterogeneous integrated filter has a high integration degree due to the integration of the capacitor and the acoustic device, and the integrated all-dielectric device formed by the capacitor and the inductor supports large bandwidth, while the acoustic device supports high out-of-band suppression, thereby being able to support large bandwidth and high out-of-band suppression at the same time. BRIEF DESCRIPTION OF DRAWINGS

[0049] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0050] FIG. 1 is a schematic structural diagram of a heterogeneous integrated filter before removing a sacrificial layer in an optional embodiment;

[0051] FIG. 2 is a schematic structural diagram of a heterogeneous integrated filter after removing a sacrificial layer in an optional embodiment;

[0052] FIG. 3 is a flowchart of steps S1-S5 in the manufacturing method of a heterogeneous integrated filter in an optional embodiment;

[0053] FIG. 4 is a flowchart of sub-steps S21-S26 in the manufacturing method of a heterogeneous integrated filter in an optional embodiment;

[0054] FIG. 5 is a flowchart of sub-steps S31-S32 in the manufacturing method of a heterogeneous integrated filter in an optional embodiment;

[0055] FIG. 6 is a flowchart of sub-steps S41-S43 in the manufacturing method of a heterogeneous integrated filter in an optional embodiment;

[0056] FIG. 7 is a flowchart of sub-steps S51-S54 in the manufacturing method of a heterogeneous integrated filter in an optional embodiment;

[0057] FIG. 8 is a schematic structural diagram of a heterogeneous integrated filter in an optional embodiment;

[0058] FIG. 9 is a flowchart of steps S1'-S6' in the manufacturing method of a heterogeneous integrated filter in an optional embodiment.

[0059] Figure: 1 - substrate; 2 - capacitor; 3 - acoustic device; 31 - first electrode layer; 32 - piezoelectric material film layer; 33 - second electrode layer; 4 - inductor; 5 - first sacrificial layer; 6 - first dielectric layer; 61 - first via; 7 - first barrier layer; 8 - interconnection line; 9 - second dielectric layer; 10 - second barrier layer; 11 - second sacrificial layer; 12 - first cavity; 13 - second cavity; 14 - third dielectric layer; 15 - third barrier layer; 16 - first substrate; 161 - second via; 17 - second substrate; 18 - third cavity; 19 - fourth cavity; 100 - cavity. DETAILED DESCRIPTION

[0060] In order to make the objects, technical solutions, and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings for the embodiments of the present application to make a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0061] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0062] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0063] In the description of the present application, it should be noted that if the terms "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship when the product of the present application is usually placed, which is only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0064] In addition, if the terms "first", "second", and the like appear, they are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0065] It should be noted that the features in the embodiments of the present application can be combined with each other without conflict.

[0066] The inventors of the present application found that after entering the 5G, 6G and Wi-Fi 7 stage, the frequency band definition specification has undergone major changes, all frequency bands are defined as more than 500MHz above large bandwidth, and the frequency band spacing is gradually narrowed, rigidly requiring filters that can simultaneously support large bandwidth and high out-of-band suppression, and traditional electromagnetic filters and acoustic filters cannot meet the requirements. Embodiments of the present application provide a heterogeneous integrated filter and a manufacturing method thereof, which can simultaneously support large bandwidth and high out-of-band suppression, and improve integration.

[0067] Please refer to FIG. 1, FIG. 2, in an optional embodiment, a heterogeneous integrated filter is provided, comprising a substrate 1, a capacitor 2, an acoustic device 3 and an inductor 4, wherein the material of the substrate 1 can be any high resistance or insulating wafer material, such as glass, silicon carbide, gallium arsenide, sapphire, etc.; the capacitor 2 and the acoustic device 3 are both arranged on the substrate 1, the capacitor 2 and the acoustic device 3 are electrically connected, the inductor 4 is arranged on the acoustic device 3 and / or the capacitor 2, and cavities 100 are arranged on both sides of the acoustic device 3 along the thickness direction of the substrate 1.

[0068] In other embodiments, the inductor 4 can also not be arranged on the acoustic device 3 and the capacitor 2, but arranged on the external substrate during chip packaging.

[0069] In combination with FIG. 3, embodiments of the present application also provide a manufacturing method of a heterogeneous integrated filter, configured to manufacture a heterogeneous integrated filter, the manufacturing method comprises:

[0070] Step S1, arranging the capacitor 2 on the substrate 1.

[0071] Step S2, arranging the acoustic device 3 on the substrate 1.

[0072] Step S3, electrically connecting the acoustic device 3 and the capacitor 2.

[0073] Step S4, arranging the inductor 4 on the acoustic device 3 and / or the capacitor 2.

[0074] Step S5, arranging cavities 100 on both sides of the acoustic device 3 along the thickness direction of the substrate 1, to form a heterogeneous integrated filter.

[0075] In step S1, the capacitor 2 is a metal-insulator-metal capacitor (MIM capacitor) or a three-dimensional capacitor, when the capacitor 2 is a metal-insulator-metal capacitor, the metal-insulator-metal capacitor is arranged on the top surface of the substrate 1; the three-dimensional capacitor is also called a columnar capacitor 2, when the capacitor 2 is a three-dimensional capacitor, part of the three-dimensional capacitor is embedded in the substrate 1, and the other part protrudes from the top surface of the substrate 1, so that the area occupied by the three-dimensional capacitor on the top surface of the substrate 1 is smaller than that of the metal-insulator-metal capacitor, further improving the integration, and also facilitating the reduction of the size of the heterogeneous integrated filter.

[0076] The stereoscopic capacitor is manufactured by opening a groove on the substrate 1 by using photolithography and etching method, then depositing a metal layer and a dielectric material film layer in the groove, the metal layer is generated by physical vapor deposition, the dielectric material film layer can be generated by chemical vapor deposition or atomic layer deposition process, the metal layer and the dielectric material film layer are both formed into a specific pattern by using photolithography and dry etching after being generated, and finally the stereoscopic capacitor is formed.

[0077] In step S2, the acoustic device 3 is a BAW acoustic device, which is an electronic component that generates mechanical vibration under the action of sound waves by using piezoelectric material, mainly applied to filter and frequency control applications in the field of radio frequency communication.

[0078] In step S5, the cavities 100 arranged on both sides of the acoustic device 3 along the thickness direction of the substrate 1 are resonant cavities, and the resonant cavities are formed after the resonant cavities are formed. Heterogeneous integrated filter.

[0079] By arranging the capacitor 2 and the acoustic device 3 on the substrate 1, and electrically connecting the capacitor 2 and the acoustic device 3, and then arranging the inductor 4 on the capacitor 2 and / or the acoustic device 3, and finally arranging the cavities 100 on both sides of the acoustic device 3 along the thickness direction of the substrate 1, the heterogeneous integrated filter is formed. The heterogeneous integrated filter has high integration degree because the capacitor 2 and the acoustic device 3 are integrated on the substrate 1 at the same time, and the integrated all-dielectric device formed by the capacitor 2 and the inductor 4 supports large bandwidth, and the acoustic device 3 supports high out-of-band suppression, thereby supporting large bandwidth and high out-of-band suppression at the same time.

[0080] Still referring to FIG. 1, the heterogeneous integrated filter further includes a first sacrificial layer 5 and a first dielectric layer 6, the first sacrificial layer 5 is arranged on the substrate 1, the acoustic device 3 includes a first electrode layer 31, a piezoelectric material film layer 32 and a second electrode layer 33, the first electrode layer 31 is deposited on the first sacrificial layer 5, the piezoelectric material film layer 32 is deposited on the first electrode layer 31, the first dielectric layer 6 is deposited on the capacitor 2 and the piezoelectric material film layer 32, and the top of the first dielectric layer 6 is flush with the top of the piezoelectric material film layer 32, and the second electrode layer 33 is deposited on the top of the piezoelectric material film layer 32. In addition, a first through hole 61 is formed in the first dielectric layer 6 towards the substrate 1, the first through hole 61 is formed to the surface of the capacitor 2, and the first through hole 61 is filled with metal.

[0081] In combination with FIG. 4, step S2 includes:

[0082] Sub-step S21, arranging a first sacrificial layer 5 on the substrate 1.

[0083] Sub-step S22, depositing a first electrode layer 31 on the first sacrificial layer 5.

[0084] Sub-step S23, depositing a piezoelectric material film layer 32 on the first electrode layer 31.

[0085] Sub-step S24, depositing a first dielectric layer 6 on the capacitor 2 and the piezoelectric material film layer 32, so that the first dielectric layer 6 is flush with the top of the piezoelectric material film layer 32.

[0086] Sub-step S25, opening a first through hole 61 on the first dielectric layer 6 towards the substrate 1 to the surface of the capacitor 2 and filling the first through hole 61 with metal.

[0087] Sub-step S26, depositing a second electrode layer 33 on the top of the piezoelectric material film layer 32.

[0088] In the sub-step S21, the first sacrificial layer 5 can be deposited on the top surface of the substrate 1, or a groove can be opened on the top surface of the substrate 1 first, then the first sacrificial layer 5 is filled in the groove, and the surface of the first sacrificial layer 5 is planarized with the top surface of the substrate 1 by chemical mechanical polishing.

[0089] In the sub-step S24, when the first dielectric layer 6 is flush with the top of the piezoelectric material film layer 32, the piezoelectric material film layer 32 is exposed to the first dielectric layer 6, and the first dielectric layer 6 covers the surface of the capacitor 2, that is, the surface of the first dielectric layer 6 is higher than the surface of the capacitor 2, at this time the first dielectric layer 6 insulates the capacitor 2 from the outside.

[0090] In the sub-step S25, the first through hole 61 is opened on the first dielectric layer 6 from top to bottom, the number of the first through hole 61 can be one or more, the first through hole 61 is opened to the surface of the capacitor 2 and filled with metal in the first through hole 61, and the capacitor 2 can be electrically connected to external elements through the metal in the first through hole 61.

[0091] It should be pointed out that when the first electrode layer 31 is deposited on the first sacrificial layer 5, photolithography and dry etching are needed to form a specific pattern on the first electrode layer 31, and when the second electrode layer 33 is deposited on the top of the piezoelectric material film layer 32, photolithography and dry etching are needed to form a specific pattern on the second electrode layer 33, and the layer structure formed by the first electrode layer 31, the piezoelectric material film layer 32 and the second electrode layer 33 constitutes the acoustic device 3.

[0092] Continuing to refer to FIG. 1, the hetero-integrated filter further comprises a first barrier layer 7 and an interconnection line 8, the first barrier layer 7 is deposited on the first dielectric layer 6, and the first through hole 61 is exposed to the first barrier layer 7; the interconnection line 8 is arranged on the top of the first through hole 61 and the second electrode layer 33, so that the capacitor 2 is electrically connected to the second electrode layer 33, and the capacitor 2 is connected to the acoustic device 3.

[0093] In combination with FIG. 5, step S3 comprises:

[0094] Sub-step S31, depositing a first barrier layer 7 on the first dielectric layer 6 so that the first via 61 is exposed to the first barrier layer 7.

[0095] Sub-step S32, disposing an interconnection line 8 on the top of the first via 61 and the second electrode layer 33 so that the capacitor 2 is electrically connected to the second electrode layer 33.

[0096] In the sub-step S31, the first barrier layer 7 is arranged in multiple along the horizontal direction, and the first via 61 is exposed to the gap between the adjacent first barrier layers 7 so that the capacitor 2 is electrically connected to the external element.

[0097] In the sub-step S32, the interconnection line 8 is connected to the metal inside the first via 61 and the second electrode layer 33 so that the capacitor 2 is electrically connected to the acoustic device 3.

[0098] With reference to FIG. 1, the heterogeneous integrated filter further comprises a second dielectric layer 9 deposited on the first barrier layer 7 and the second electrode layer 33, and a second barrier layer 10 deposited on the second dielectric layer 9, and the inductor 4 is disposed on the second barrier layer 10 and electrically connected to the interconnection line 8.

[0099] With reference to FIG. 6, the step S4 comprises:

[0100] Sub-step S41, depositing the second dielectric layer 9 on the first barrier layer 7 and the second electrode layer 33 so that the top of the second dielectric layer 9 is flush with the top of the interconnection line 8.

[0101] Sub-step S42, depositing the second barrier layer 10 on the second dielectric layer 9.

[0102] Sub-step S43, disposing the inductor 4 on the second barrier layer 10 and electrically connecting the inductor 4 to the interconnection line 8.

[0103] In the sub-step S41, the second dielectric layer 9 is deposited on the top of the first barrier layer 7 and the second electrode layer 33 by chemical vapor deposition until the top of the second dielectric layer 9 is flush with the top of the interconnection line 8.

[0104] The sub-step S42 comprises:

[0105] Sub-step S421, forming a second sacrificial layer 11 on the part of the second dielectric layer 9 above the second electrode layer 33.

[0106] Sub-step S422, depositing the second barrier layer 10 on the second dielectric layer 9 so that the second sacrificial layer 11 is enclosed between the second barrier layer 10 and the second electrode layer 33.

[0107] It should be noted that etching the second dielectric layer 9 to form the second sacrificial layer 11 above the second electrode layer 33, and then depositing the second barrier layer 10 on the second dielectric layer 9, the second barrier layer 10 and the second electrode layer 33 together enclose the second sacrificial layer 11.

[0108] In the sub-step S43, a metal film layer is formed on the second barrier layer 10 by electroplating or physical vapor deposition, and a plurality of inductors 4 are formed by using photolithography and dry etching the metal film layer, the plurality of inductors 4 are electrically connected to the interconnection line 8 after passing through the second barrier layer 10, and the plurality of inductors 4 also have an electrical connection relationship.

[0109] In the embodiment of the present application, the acoustic device 3 and the inductors 4 and the capacitors 2 can be in series or parallel connection, and by connecting the inductors 4 and the capacitors 2 in series or parallel, the series resonance frequency or the parallel resonance frequency of the acoustic device 3 can be shifted, and by reasonably designing the values and connection modes of the inductors 4 and the capacitors 2, the effective electromechanical coupling coefficient (k2) of the acoustic device 3 after hybrid design can be increased.

[0110] With reference to FIG. 2, the heterogeneous integrated filter further includes a third dielectric layer 14 and a third barrier layer 15, the third dielectric layer 14 is deposited on the second barrier layer 10, the third barrier layer 15 is deposited on the third dielectric layer 14, and the third dielectric layer 14 and the third barrier layer 15 are partially penetrated to the surface of the inductor 4, so that the inductor 4 can be electrically connected to external elements; the cavity 100 includes a first cavity 12 and a second cavity 13, the first cavity 12 and the second cavity 13 are arranged on both sides of the acoustic device 3, the first cavity 12 is formed by removing the first sacrificial layer 5, and the second cavity 13 is formed by removing the second sacrificial layer 11.

[0111] With reference to FIG. 7, the step S5 includes:

[0112] In the sub-step S51, the third dielectric layer 14 is deposited on the second barrier layer 10, and the third dielectric layer 14 covers the inductor 4.

[0113] In the sub-step S52, the third barrier layer 15 is deposited on the third dielectric layer 14.

[0114] In the sub-step S53, the third barrier layer 15 and the third dielectric layer 14 are penetrated to the surface of the inductor 4 towards the substrate 1.

[0115] In the sub-step S54, the first cavity 12 is formed by removing the first sacrificial layer 5, and the second cavity 13 is formed by removing the second sacrificial layer 11.

[0116] In the sub-step S51, the third dielectric layer 14 is deposited on the second barrier layer 10, and the third dielectric layer 14 covers the inductor 4.

[0117] In sub-step S53, the third barrier layer 15 and the third dielectric layer 14 are removed until the inductor 4 is exposed, and the inductor 4 can be electrically connected with external elements.

[0118] In sub-step S54, the first sacrificial layer 5 is removed by photolithography, dry etching and wet etching, and the first cavity 12 is formed between the first electrode layer 31 and the substrate 1; the second sacrificial layer 11 is removed by photolithography, dry etching and wet etching, and the second cavity 13 is formed between the second barrier layer 10 and the second electrode layer 33, thereby manufacturing the heterogeneous integrated filter, wherein the first cavity 12 and the second cavity 13 are both resonant cavities.

[0119] It should be noted that the first dielectric layer 6, the second dielectric layer 9, the third dielectric layer 14, the first sacrificial layer 5 and the second sacrificial layer 11 in the embodiment are all silicon oxide materials, and the first barrier layer 7, the second barrier layer 10 and the third barrier layer 15 are all silicon nitride materials; in other embodiments, the first sacrificial layer 5 can also be a PSG material.

[0120] Please refer to FIG. 8 and FIG. 9, in another alternative embodiment, a heterogeneous integrated filter and a manufacturing method thereof are provided.

[0121] The substrate 1 includes a first substrate 16 and a second substrate 17 arranged oppositely, the capacitor 2 is arranged on a surface of the first substrate 16 facing the second substrate 17, the acoustic device 3 is arranged on a surface of the second substrate 17 facing the first substrate 16, and the acoustic device 3 is bonded to the first substrate 16; the third cavity 18 is formed on the first substrate 16, and the fourth cavity 19 is formed on the second substrate 17, and the third cavity 18 and the fourth cavity 19 are arranged on both sides of the acoustic device 3 along a thickness direction of the first substrate 16 or the second substrate 17.

[0122] The manufacturing method of the heterogeneous integrated filter includes:

[0123] Step S1', arranging the capacitor 2 on the first substrate 16.

[0124] Step S2', arranging the acoustic device 3 on the second substrate 17.

[0125] Step S3', bonding the acoustic device 3 to the first substrate 16.

[0126] Step S4', electrically connecting the acoustic device 3 with the capacitor 2.

[0127] Step S5', arranging the inductor 4 on the acoustic device 3 and / or the capacitor 2.

[0128] Step S6', arranging the cavity 100 on both sides of the acoustic device 3 along a thickness direction of the first substrate 16 or the second substrate 17, thereby forming the heterogeneous integrated filter.

[0129] In the steps S1' to S2', the capacitor 2 can also be a metal-insulator-metal capacitor or a three-dimensional capacitor. Optionally, the capacitor 2 is a three-dimensional capacitor, a part of which is embedded in the first substrate 16 and another part of which protrudes from the first substrate 16 towards the second substrate 17. On the one hand, the three-dimensional capacitor occupies a smaller area on the surface of the first substrate 16 facing the second substrate 17 than the metal-insulator-metal capacitor. On the other hand, the three-dimensional capacitor can coincide with the projected part of the acoustic device 3 in the horizontal plane, further improving the integration level and facilitating the reduction of the size of the heterogeneous integrated filter.

[0130] In the step S3', the first substrate 16 is bonded to the piezoelectric material film layer 32 of the acoustic device 3, thereby sealing the acoustic device 3 and protecting the acoustic device 3. The bonding can be gold-gold bonding or copper-copper bonding.

[0131] In the step S4', the acoustic device 3 is electrically connected to the capacitor 2 through the metal structure near the electrode layer of the first substrate 16. A second through hole 161 is formed on the first substrate 16 to the surface of the capacitor 2 by photolithography and etching, and then a metal is deposited in the second through hole 161 by physical vapor deposition, so as to electrically connect the capacitor 2 to external elements.

[0132] In the embodiment, the steps S3' and S4' are performed synchronously, that is, when the first substrate 16 is bonded to the piezoelectric material film layer 32 of the acoustic device 3, the acoustic device 3 is electrically connected to the capacitor 2 through the metal structure near the electrode layer of the first substrate 16.

[0133] The step S6' includes:

[0134] In the sub-step S61', a third cavity 18 is formed on the first substrate 16 and a fourth cavity 19 is formed on the second substrate 17 in the thickness direction of the first substrate 16 or the second substrate 17, thereby forming the heterogeneous integrated filter.

[0135] In the embodiment, the thickness directions of the first substrate 16 and the second substrate 17 are consistent, the third cavity 18 is formed on the first substrate 16 on one side of the acoustic device 3, and the fourth cavity 19 is formed on the second substrate 17 on the other side of the acoustic device 3. The third cavity 18 on the first substrate 16 can be formed before the step S1'.

[0136] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any changes or replacements within the technical scope disclosed by the present application can be easily thought of by those skilled in the art, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims. Industrial applicability

[0137] In the manufacturing method of the heterogeneous integrated filter, the heterogeneous integrated filter is formed by setting the capacitor 2 and the acoustic device 3 on the substrate 1, electrically connecting the capacitor 2 and the acoustic device 3, setting the inductor 4 on the capacitor 2 and / or the acoustic device 3, and finally setting the cavity 100 on both sides of the acoustic device 3 along the thickness direction of the substrate 1. The heterogeneous integrated filter has high integration degree due to the simultaneous integration of the capacitor 2 and the acoustic device 3 on the substrate 1. The integrated all-dielectric device formed by the capacitor 2 and the inductor 4 supports large bandwidth, and the acoustic device 3 supports high out-of-band suppression, so that large bandwidth and high out-of-band suppression can be supported simultaneously.

Claims

1. A method of manufacturing a heterogeneously integrated filter, characterized by, Comprising: providing a capacitor (2) on a substrate (1); providing an acoustic device (3) on the substrate (1); electrically connecting the acoustic device (3) with the capacitor (2); providing an inductor (4) on the acoustic device (3) and / or the capacitor (2); providing cavities (100) on both sides of the acoustic device (3) along the thickness direction of the substrate (1) to form a heterogeneous integrated filter.

2. The method of manufacturing a heterogeneous integrated filter according to claim 1, wherein The step of providing an acoustic device (3) on the substrate (1) comprises: providing a first sacrificial layer (5) on the substrate (1); depositing a first electrode layer (31) on the first sacrificial layer (5); depositing a piezoelectric material film layer (32) on the first electrode layer (31); depositing a first dielectric layer (6) on the capacitor (2) and the piezoelectric material film layer (32) so that the first dielectric layer (6) is flush with the top of the piezoelectric material film layer (32); opening a first through hole (61) on the first dielectric layer (6) to the surface of the capacitor (2) and filling the first through hole (61) with metal; depositing a second electrode layer (33) on the top of the piezoelectric material film layer (32).

3. The method of manufacturing a heterogeneous integrated filter according to claim 2, wherein The step of electrically connecting the acoustic device (3) with the capacitor (2) comprises: depositing a first barrier layer (7) on the first dielectric layer (6) so that the first through hole (61) is exposed to the first barrier layer (7); arranging an interconnection line (8) on the top of the first through hole (61) and the second electrode layer (33) to electrically connect the capacitor (2) with the second electrode layer (33).

4. The method of manufacturing a heterogeneous integrated filter according to claim 3, wherein The step of providing an inductor (4) on the acoustic device (3) and / or the capacitor (2) comprises: depositing a second dielectric layer (9) on the first barrier layer (7) and the second electrode layer (33) so that the second dielectric layer (9) is flush with the top of the interconnection line (8); depositing a second barrier layer (10) on the second dielectric layer (9); providing an inductor (4) on the second barrier layer (10) and electrically connecting the inductor (4) with the interconnection line (8).

5. The method of manufacturing a heterogeneous integrated filter according to claim 4, wherein The step of depositing a second barrier layer (10) on the second dielectric layer (9) comprises: forming a second sacrificial layer (11) on the part of the second dielectric layer (9) above the second electrode layer (33); depositing a second barrier layer (10) on the second dielectric layer (9) so that the second sacrificial layer (11) is enclosed between the second barrier layer (10) and the second electrode layer (33).

6. The method of manufacturing a heterogeneous integrated filter according to claim 5, wherein The cavities (100) comprise a first cavity (12) and a second cavity (13), and the step of providing cavities on both sides of the acoustic device (3) along the thickness direction of the substrate (1) to form a heterogeneous integrated filter comprises: depositing a third dielectric layer (14) on the second barrier layer (10); depositing a third barrier layer (15) on the third dielectric layer (14); penetrating through the third barrier layer (15) and the third dielectric layer (14) to the surface of the inductor (4) towards the substrate (1); The first cavity (12) is formed by removing the first sacrificial layer (5), and the second cavity (13) is formed by removing the second sacrificial layer (11).

7. The method of manufacturing a heterogeneous integrated filter according to claim 1, wherein The capacitor (2) comprises a metal-insulator-metal capacitor or a three-dimensional capacitor.

8. The method of manufacturing a heterogeneous integrated filter according to claim 1, wherein The substrate (1) comprises a first substrate (16) and a second substrate (17) arranged oppositely, and the manufacturing method of the heterogeneous integrated filter comprises: arranging a capacitor (2) on the first substrate (16); arranging an acoustic device (3) on the second substrate (17); bonding the acoustic device (3) with the first substrate (16); electrically connecting the acoustic device (3) with the capacitor (2); arranging an inductor (4) on the acoustic device (3) and / or the capacitor (2); arranging cavities (100) on both sides of the acoustic device (3) along the thickness direction of the first substrate (16) or the second substrate (17) to form a heterogeneous integrated filter.

9. The method of manufacturing a heterogeneous integrated filter according to claim 8, wherein The cavities (100) comprise a third cavity (18) and a fourth cavity (19), and the step of arranging cavities on both sides of the acoustic device (3) along the thickness direction of the first substrate (16) or the second substrate (17) to form a heterogeneous integrated filter comprises: arranging a third cavity (18) on the first substrate (16) and a fourth cavity (19) on the second substrate (17) to form a heterogeneous integrated filter.

10. A heterogeneously integrated filter, comprising: The substrate (1), the capacitor (2), the acoustic device (3), and the inductor (4) are arranged on the substrate (1), the capacitor (2) and the acoustic device (3) are electrically connected, the inductor (4) is arranged on the acoustic device (3) and / or the capacitor (2), and cavities (100) are arranged on both sides of the acoustic device (3) along the thickness direction of the substrate (1).

11. The heterogeneous integrated filter of claim 10, wherein, A first sacrificial layer (5) and a first dielectric layer (6) are further arranged on the substrate (1). The acoustic device (3) comprises a first electrode layer (31), a piezoelectric material film layer (32), and a second electrode layer (33), the first electrode layer (31) is deposited on the first sacrificial layer (5), the piezoelectric material film layer (32) is deposited on the first electrode layer (31), the first dielectric layer (6) is deposited on the capacitor (2) and the piezoelectric material film layer (32), and the second electrode layer (33) is deposited on the piezoelectric material film layer (32).

12. The heterogeneous integrated filter of claim 11, wherein, A first through hole (61) is arranged on the first dielectric layer (6) and faces the substrate (1), the first through hole (61) is arranged to the surface of the capacitor (2), and the first through hole (61) is filled with metal.

13. The heterogeneous integrated filter of claim 12, wherein, A first barrier layer (7) and an interconnection line (8) are further arranged, the first barrier layer (7) is deposited on the first dielectric layer (6), and the first through hole (61) is exposed to the first barrier layer (7); and the interconnection line (8) is arranged on the top of the first through hole (61) and the second electrode layer (33).

14. The heterogeneous integrated filter of claim 13, wherein, The second dielectric layer (9) is deposited on the first barrier layer (7) and the second electrode layer (33), and the second barrier layer (10) is deposited on the second dielectric layer (9), the inductor (4) is arranged on the second barrier layer (10), and the inductor (4) is electrically connected with the interconnection line (8).

15. The heterogeneous integrated filter of claim 14, wherein, The third dielectric layer (14) is deposited on the second barrier layer (10), the third barrier layer (15) is deposited on the third dielectric layer (14), and the third dielectric layer (14) and the third barrier layer (15) partially penetrate the surface of the inductor (4).

16. The heterogeneous integrated filter of claim 10, wherein, The cavity (100) comprises a first cavity (12) and a second cavity (13), and the first cavity (12) and the second cavity (13) are arranged on two sides of the acoustic device (3).

17. The heterogeneous integrated filter of claim 10, wherein, The substrate (1) comprises a first substrate (16) and a second substrate (17), the capacitor (2) is arranged on the surface of the first substrate (16) facing the second substrate (17), the acoustic device (3) is arranged on the surface of the second substrate (17) facing the first substrate (16), and the acoustic device (3) is bonded with the first substrate (16). The first substrate (16) is provided with a third cavity (18), and the second substrate (17) is provided with a fourth cavity (19), and the third cavity (18) and the fourth cavity (19) are located on two sides of the acoustic device (3).

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