System and method for die bonding alignment referenced to carrier position

Abstract

A system and method for determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.

Description

SYSTEM AND METHOD FOR DIE BONDING ALIGNMENT REFERENCED TO CARRIER POSITIONCROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority of EP application 24179462.7 which was filed on 03 June 2024 and which is incorporated herein in its entirety by reference.TECHNICAL FIELD

[0002] The present disclosure relates generally to a method and tool for die bonding.BACKGROUND

[0003] In manufacturing processes of integrated circuits (ICs), multiple finished or unfinished ICs (e.g., whole wafers, diced wafers, partially diced wafers, chips, die, etc.) may be placed in contact, stacked, bonded, or otherwise joined (e.g., to heterogeneous or homogeneous devices) at various points in the fabrication process. Heterogeneous integration, e.g., the integration of different circuits or other patterned devices, may rely upon joining of specific portions (for example, conductive contact elements) of multiple die — where these specific portions may be aligned in three-dimensional space to ensure functional connectivity. Alignment of these die, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., with each other may require different techniques than used for lithography during fabrication. As the physical sizes of IC components continue to shrink, and their structures continue to become more complex, accuracy and throughput in integration become more important. For applications such as heterogeneous integration, it may be desirable to obtain both accurate and fast placement of die with respect to one another. In the context of semiconductor manufacture, improvements in die placement and alignment (e.g., improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration abilities.SUMMARY

[0004] According to an embodiment, there is provided a method comprising: determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.

[0005] According to an embodiment, there is provided a method comprising: determining a position of a carrier of a plurality of donor dies using a capacitive sensing arrangement comprising a capacitive pattern and a capacitive sensor, wherein the carrier comprises the capacitive pattern or the capacitive sensor; andaligning the donor dies to one or more corresponding acceptor locations for bonding based on the determined position.

[0006] According to an embodiment, there is provided a method comprising determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies, the position of the one or more semiconductor donor dies relative to the one or more carrier marks configured to be used for aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding.

[0007] According to an embodiment, there is provided a method comprising aligning one or more semiconductor donor dies on a donor carrier to one or more corresponding acceptor locations, referenced to one or more carrier marks on the donor carrier, for bonding.

[0008] According to an embodiment, there is provided a system comprising: a metrology tool configured to determine a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and a processor system configured to cause alignment of the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.

[0009] According to an embodiment, there is provided a system comprising: a metrology tool configured to determine a position of a carrier of a plurality of donor dies using a capacitive sensing arrangement comprising a capacitive pattern and a capacitive sensor, wherein the carrier comprises the capacitive pattern or the capacitive sensor; and a processor system configured to cause alignment of the donor dies to one or more corresponding acceptor locations for bonding based on the determined position.

[0010] According to an embodiment, there is provided a system comprising a metrology tool configured to determine a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies, the position of the one or more semiconductor donor dies relative to the one or more carrier marks configured to be used for aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding.

[0011] According to an embodiment, there is provided a system comprising a processor system configured to cause alignment of one or more semiconductor donor dies on a donor carrier to one or more corresponding acceptor locations, referenced to one or more carrier marks on the donor carrier, for bonding.

[0012] According to another embodiment, one or more non-transitory, machine -readable medium is provided having instructions thereon, the instructions when executed by a processor being configured to perform a method as described herein.BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate one or more embodiments and, together with the description, explain these embodiments. Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:

[0014] Figure 1A is a schematic diagram illustrating an exemplary die bonding method, according to one or more embodiments.

[0015] Figure IB is another schematic diagram illustrating the exemplary die bonding method, according to one or more embodiments.

[0016] Figure 1C is another schematic diagram illustrating the exemplary die bonding method, according to one or more embodiments.

[0017] Figure ID is another schematic diagram illustrating the exemplary die bonding method, according to one or more embodiments.

[0018] Figure 2A is a schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0019] Figure 2B is another schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0020] Figure 2C is another schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0021] Figure 2D is another schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0022] Figure 2E is another schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0023] Figure 2F is another schematic diagram illustrating an example method of die placement, according to one or more embodiments.

[0024] Figure 3A is a schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0025] Figure 3B is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0026] Figure 3C is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0027] Figure 3D is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0028] Figure 3E is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0029] Figure 3F is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0030] Figure 3G is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0031] Figure 3H is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0032] Figure 31 is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0033] Figure 3J is another schematic diagram illustrating portions of an example system for die bonding, according to one or more embodiments.

[0034] Figure 4 illustrates measurement of semiconductor donor die position on a carrier that is carrying donor dies, according to one or more embodiments.

[0035] Figure 5 illustrates how, in some embodiments, the position of one or more semiconductor donor dies relative to one or more carrier marks is provided as a feedforward signal to a donor die or acceptor substrate positioning system (e.g., as described above with respect to Figures 1A-1D, 2A-2F, or 3A-3J) for bonding, according to one or more embodiments.

[0036] Figure 6 illustrates examples of die marks and carrier marks for alignment prior to bonding, according to one or more embodiments.

[0037] Figure 7 illustrates examples of die marks, carrier marks, an optical sensor and a field of view, and a sufficient density of carrier marks for alignment, according to one or more embodiments.

[0038] Figure 8 illustrates a capacitive sensing arrangement, according to one or more embodiments.

[0039] Figure 9 illustrates an example electrode layout for electrodes of a capacitive sensor in the capacitive sensing arrangement in Figure 8, according to one or more embodiments.

[0040] Figure 10 is a flowchart which illustrates an exemplary method of donor die alignment and placement, according to one or more embodiments.

[0041] Figure 11 is a block diagram of an example computer system, according to one or more embodiments of the present disclosure.DETAILED DESCRIPTION

[0042] Embodiments of the present disclosure are described in detail with reference to the drawings, which are provided as illustrative examples of the disclosure so as to enable those skilled in the art to practice the disclosure. Notably, the figures and examples below are not meant to limit the scope of the present disclosure to a single embodiment, but other embodiments are possible by way of interchange of some or all of the described or illustrated elements. Moreover, where certain elements of the present disclosure can be partially or fully implemented using known components, only those portions of such known components that are necessary for an understanding of the present disclosure will be described, and detailed descriptions of other portions of such known components will beomited so as not to obscure the disclosure. Embodiments described as being implemented in software should not be limited thereto, but can include embodiments implemented in hardware, or combinations of software and hardware, and vice-versa, as will be apparent to those skilled in the art, unless otherwise specified herein. In the present specification, an embodiment showing a singular component should not be considered limiting; rather, the disclosure is intended to encompass other embodiments including a plurality of the same component, and vice-versa, unless explicitly stated otherwise herein. Moreover, applicants do not intend for any term in the specification or claims to be ascribed an uncommon or special meaning unless explicitly set forth as such. Further, the present disclosure encompasses present and future known equivalents to the known components referred to herein by way of illustration.

[0043] Although specific reference may be made in this text to the manufacture of ICs, it should be explicitly understood that the description herein has many other possible applications. For example, it may be employed in the manufacture of integrated optical systems, guidance and detection paterns for magnetic domain memories, liquid-crystal display panels, thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” in this text should be considered as interchangeable with the more general terms “substrate” and “target portion”, respectively. The term “wafer” may be used generally to refer to a large unit of manufacture (which may be the largest unit of manufacture), while the term “die” may be used to refer to a smaller unit of manufacture which may correspond to a lithography patern, a portion of a lithography patern, multiple lithography paterns, etc. A “die” may correspond to a portion of “wafer” — that is a “die” may be produced by dicing or otherwise dividing a “wafer”. The term “die” should be considered as interchangeable with the term chip, chiplet, or other terms for IC divisions. A paterning device (for example, a lithography device) can comprise, or can form, one or more paterns, which may correspond to one or more die. The paterns can be generated utilizing CAD (computer-aided design) programs, based on a patern or design layout, this process often being referred to as EDA (electronic design automation). As used throughout this application “or”, unless indicated otherwise, takes a non-exclusive meaning, e.g., encompassing both “and” and “or”. “Each”, “every”, “all”, “corresponding”, “individual” and other relational terms encompass substantially “each”, “every”, “all”, etc., including cases in which each, every, all, corresponding, individual, etc. may include relationship which are not one-to-one, or do not include every possible item. For example, every may exclude items, such as items determined to be defective during testing. Each may exclude items, such as edge items, which are not used. All may exclude items, such as excess items. Corresponding may not require that items correspond in an exactly one to one manner. For example, a first item may correspond to two of a second item or vice versa. In some cases, individual may refer to multiple of an item, such as each item A has individual item B, where an item A may have two of an item B.

[0044] Reference is now made to Figures 1A-1D, which are schematic diagrams illustrating anexemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted in relation to a reference set of axes, which are consistent through the schematic illustrations. The reference axes are provided for ease of description only and are not to be taken as limiting. Included methods and apparatuses may instead be described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin point (e.g., an origin point in the donor die, an origin point in an acceptor, origin point in between the donor die and acceptor, etc.), or a different orientation. The reference set of axes is chosen such that the fabrication plane of the die (i.e., a substrate surface) lies in the x-y plane and where the fabrication direction is parallel or antiparallel to the z-axis for both the donor die and acceptor locations.

[0045] As shown in Figures 1A-1D, the exemplary die bonding method may involve a donor die 102 and an acceptor die 104 (or more generally an acceptor location). Herein, the term “donor” and the term “acceptor” are used for ease of description. It should be understood that the term “donor” and the term “acceptor” are provided for reference and are relative descriptions, and that elements described as corresponding to a “donor” can instead correspond to an “acceptor” and vice versa. Further, while just one donor die and acceptor die are depicted in Figure 1A, it will be appreciated that there may be multiple such die and that multiple donor die may be essentially simultaneously bonded with multiple acceptor locations, e.g., die where, for example, multiple die are still part of (all or part) a substrate in or on which they are formed.

[0046] The donor die 102 may have one or more electrically active areas 106 or other features on an alignment face of the donor die 102. The one or more electrically active areas may be conductive, formed from a material such as metal. The one or more electrically active areas may correspond to one or more vias (e.g., one or more through silicon vias (TSVs)), one or more electrical contact lines, one or more contact pads, one or more packaging pads, or other one or more electrically conductive areas.

[0047] The donor die 102 may have one or more electrically inert areas (for example, an electrically insulating area) outside of the one or more electrically active areas 106, such as on the alignment face of the donor die 102. The one or more electrically active areas 106 may be recessed (as shown) with respect to one or more other surfaces of the donor die 102. The one or more electrically active areas 106 may correspond to one or more contacts (e.g., to source, to drain, to gate, etc.) to one or more electrical devices within the donor die 102 (not shown). The acceptor die 104, likewise, may have one or more electrically active areas 108, which may have one or more similar properties to the one or more electrically active areas 106.

[0048] The donor die 102 may also or instead have one or more doped areas 110, such as on an alignment face of the donor die 102, recessed below the alignment face of the donor die 102, etc. While the term “doped” is used, it should be understood that the one or more doped areas 110 may be any areas which, through the course of fabrication, come to have one or more different electrical characteristics than the bulk of the substrate (e.g., silicon wafer). The one or more doped areas 110may correspond to source, drain, gate, ground, or other areas of a circuit which is doped or otherwise altered (e.g., through implantation, oxide growth, thin film deposition, etc.) to have a different electrical characteristic than the bulk of the substrate. The one or more doped areas 110 may include one or more conductive layers (e.g., one or more highly doped or electrically conductive layers) or one or more insulative layers (e.g., one or more oxide layers). The donor die 102 may have one or more undoped areas (for example, an area where the substrate retains the characteristic of the bulk substrate) outside of the one or more doped areas 110, such as on the alignment face of the donor die 102. The one or more doped areas 110 may be recessed, buried, coplanar (as shown), etc. with respect to one or more other surfaces of the donor die 102. The one or more doped areas 110 may correspond to one or more regions (e.g., to one or more source regions, one or more drain regions, one or more gate regions, one or more dielectric regions, etc.) of one or more electrical devices within the donor die 102 or one or more regions which may form one or more electrical devices across both the donor die 102 and the acceptor die 104 once those die are bonded. The acceptor die 104, likewise, may have one or more doped areas 112, which may have one or more similar properties to the one or more doped areas 110.

[0049] As shown in Figures 1A and IB, the exemplary die bonding method may involve alignment of at least one of the electrically active areas 106 or doped areas 110 of the donor die 102 with at least one of the electrically active areas 108 or doped areas 112 of the acceptor die 104. The exemplary die bonding method may involve bringing the donor die 102 into contact with the acceptor die 104 while maintaining alignment between, e.g., one or more electrically active areas 106 and one or more electrically active areas 108 so that the one or more electrically active areas 106 and the one or more electrically active areas 108 may be joined for cross-die electrical communication. The exemplary die bonding method may involve aligning one or more doped areas 110 of the donor die 102 with one or more doped areas 112 of the acceptor die 104. Aligning may encompass bringing into contact, aligning one or more edges of various regions, having overlap, having non-overlap, or any other appropriate alignment scheme. The exemplary die bonding method may involve applying or maintaining pressure between the donor die 102 and the acceptor die 104, while bonding occurs between the donor die 102 and the acceptor die 104. The donor die 102 may be supported by a carrier 114, which may be a substrate which is transparent to a range of radiation (e.g., infrared radiation, a portion of the optical spectrum, etc.). The acceptor die 104 may likewise be supported by a carrier 116, which may or may not be transparent to a range of radiation. The alignment may be complicated by the multiple layers of the donor die 102 or the multiple layers of the acceptor die 104, which may be optically opaque.

[0050] Figures 1A and IB depict a cross-sectional view of portions of the exemplary die bonding method showing relative positioning between the donor die 102 and the acceptor die 104 (e.g., an acceptor location). As shown in Figure 1A, the donor die 102 and the acceptor die 104 may be brought together along the z-axis, while the position of the donor die 102 or the acceptor die 104 maybe adjusted in the x-y plane (e.g., perpendicular to the z-axis of approach), such as to improve alignment between the donor die 102 and the acceptor die 104. As shown in Figure IB, alignment can be achieved between, e.g., one or more electrically active areas 106 and one or more electrically active areas 108 or between one or more doped areas 110 of the donor die 102 with one or more doped areas 112 of the acceptor die 104.

[0051] Once aligned, the donor die 102 and the acceptor die 104 are bonded together. In an embodiment, the bonding is a direct or fusion bonding (e.g., involving van der Waals forces). In an embodiment, the bonding is an intermolecular bonding, e.g., van der Waals bonding. In an embodiment, the bonding may include covalent, ionic, or metallic (e.g., chemical) bonding, e.g., hydrogen bonding. In an embodiment, the bonding is aided by a material (e.g., a suitable bonding or adhesive material) applied to an alignment surface of the donor die 102 or acceptor die 104 or provided to a gap between the donor die 102 and the acceptor die 104 (e.g., in the form of gas or liquid). In some embodiments, physical contact between the donor die 102 and the acceptor die 104 may include bonding, such as through a bonding wavefront generated by contact (or atomic level proximity), such as of a surface prepared for hydrogen bonding.

[0052] As shown in Figure IB, the donor die 102 and the acceptor die 104 may be annealed after contact as depicted by the wavy lines (while wavy lines are shown here at both the donor die 102 and the acceptor die 104, the annealing agent need not be provided at both the donor die 102 and the acceptor die 102 nor needs to be applied in the direction(s) shown). Annealing may be or include heat annealing, electrical annealing, electrostatic processes, etc. In some embodiments, annealing may include annealing of in-plane (or prominent) regions that are bonded or annealing of one or more recessed areas which may increase the volume of fill in a recess area (such as through thermal expansion, capillary force, etc.) and may cause physical contact and bonding of areas previously not in contact. As shown in Figure 1C, annealing may cause physical or chemical changes, such as in the one or more electrically active areas 106 of the donor die 102 or in the one or more electrically active areas 108 of the acceptor die 104, which may cause or improve physical contact or electrical contact between an electrically active area 106 and an electrically active area 108. Annealing may therefore produce or enhance electrical connectivity between elements of the donor die 102 and the acceptor die 104 (e.g., integration). This electrical connectivity may occur even if an electrically active area 106 and an electrically active area 108 differ — for example, have different recessed depths, are made up of different materials, have different dimensions, etc. In an embodiment, the prior bonding described with respect to Figure 1 A may be temporary during one or more portions of the annealing process, wherein the annealing process forms tight connections between donor die 102 and the acceptor die 104. In an embodiment, the annealing may occur in the system where the bonding occurs. In an embodiment, the annealing may occur in a separate system from the system in which the bonding occurs, e.g., the donor and acceptor dies are transported out of the bonding system into an annealing system which can include one or more heating elements (e.g., one or more electrical heating elements,one or more elements to provide radiation heating, etc.) to provide the heat for the annealing.

[0053] Once the donor die 102 and the acceptor die 104 are bonded, the carrier 114 may be removed as shown in Figure IB. Additionally or alternatively, the carrier 116 may be removed then as well. Alternatively, once the donor die 102 and the acceptor die 104 are annealed, the carrier 116 may be removed as shown in Figure 1C. Additionally or alternatively, the carrier 114 may be removed then as well.

[0054] Figure ID depicts a plan view of an example die bonding method according to this disclosure. As shown in Figure ID, the donor die 102 or the acceptor die 104 (e.g., an acceptor location) may have one or more die alignment marks along the x-y plane to facilitate alignment of the die as a whole. Alignment marks in the x-y plane of a die (e.g., one or more die (alignment) marks 120 on the donor die 102 or one or more die (alignment) marks 122 on the acceptor die 104) may reduce the area available for circuitry. One or more alignment marks may be placed in a waste area, such as an area between chips, which may then be destroyed (e.g., removed) during dicing. Dicing herein refers to mechanical separation of areas of a substrate (e.g., a unit of manufacture) into smaller areas (e.g., dies or chips) which may contain one or more units of operation (e.g., a logic device, a memory unit, etc.). Dicing may operate using any appropriate method — for example, scribing and breaking, mechanical sawing, laser cutting, etc. — and may destroy (e.g., grind to powder or otherwise render inoperable for circuitry placement) a non-zero linewidth portion of the substrate volume when separating die.Alignment marks may be additively or substractively fabricated, such as by etching or deposition in the z-direction. Alignment marks 120 and 122 may be the same or different. Alignment marks 120 and 122 may be a multi-directional alignment mark, i.e., capable of determining alignment in more than one direction, such as a bi-direction alignment mark, an example of which is shown as mark 120 in Figure ID. The alignment mark 120 or alignment mark 122 may be a fine alignment mark, such as for alignment in the pm scale. The alignment mark 120 may be located on the donor die 102 while the acceptor die 104 may have an alignment mark 122 located in a waste area, or vice versa. Alternatively or additionally, one or more electrically active or doped areas of the donor die 102 or one or more electrically active or doped areas of the acceptor die 104 (not shown in Figure ID) or other surface features may function as a reference for alignment (e.g., an alignment mark) of the donor die 102 or the acceptor die 104.

[0055] The donor die 102 and the acceptor die 104 may be aligned in up to three dimensions before or during contact between the donor die 102 and the acceptor die 104. For example, the donor die 102 or the acceptor die 104 may be positioned in the x-y plane as the donor die 102 in the acceptor die 104 are contacted. The donor die 102 or the acceptor die 104 may be positioned by operation of a die actuator or other die-scale elements, such as by piezoelectric stepper elements, or by operation of a chuck or other carrier structure -scale elements, such as by a motor or other actuator. The position of the donor die 102 or the acceptor die 104 may be adjusted with respect to up to six degrees of freedom. For example, given an origin point at a central part of the donor die 102, the donor die 102may be positioned by movement along the X axis (e.g., in a positive or negative X direction), along the y-axis (e.g. in a positive or negative Y direction), along the z-axis (e.g., in a positive or negative Z direction). The donor die 102 may also be positioned rotationally with respect to each of those axes — e.g., rotated with respect to the x-axis, rotated with respect to the y-axis, rotated with respect to the z- axis. That is, the donor die 102 may be positioned by free movement in space accounted for by six different types of movement (where the movements listed above are provided as examples but where the movements may be described by other axes). Of course, the acceptor die 104 may be positioned alone or combined with positioning of the donor die 102. Positioning or adjustment of position herein, unless the context otherwise requires, includes displacement, rotation or any combination thereof.

[0056] In some embodiments, the donor die 102 and the acceptor die 104 may be measured with respect to a reference plane or structure (e.g., the X-Y plane), including with respect to the same reference plane or structure, but the donor die 102 or the acceptor die 104 may be flipped (before or after measurement) so that the fabrication surface of the donor die 102 and the fabrication surface of the acceptor die 104 may be bonded (see, e.g., the bottom diagram of Figure ID). The one or more alignment marks (e.g., the alignment marks 120 and 122) may be on the fabrication surface of the donor die 102 and the acceptor die 104, respectively. Once the donor die 102 or the acceptor die 104 is flipped, one or more alignment mark may be rendered invisible (such as due to opacity of a die) to an alignment measurement tool. The alignment of the flipped die may therefore be performed based on previously measured positions of the die (e.g., of the one or more alignment marks of the die) with respect to a structure, such as the donor die 102 with respect to carrier 114 or such as the acceptor die 104 with respect to the carrier 116.

[0057] Figures 2A-2F are schematic diagrams illustrating an example method of die placement. Figures 2A-2F are described with reference to “donor” (e.g., a “donor die”, a “donor substrate” comprising multiple “donor die”, or a “donor location” as a general term for any of these) and “acceptor” (e.g., an “acceptor die”, “acceptor substrate” comprising multiple “acceptor die”, or an “acceptor location”), which are relative descriptors and donor die may instead be acceptor die and vice versa. Figures 2A-2F are described with respect to donor die and acceptor die; but may instead be a donor substrate or acceptor substrate, where a “substrate” may comprise multiple “die”, including un-diced (e.g., unseparated) die in the form of all or part of a semiconductor wafer; or more generally a “donor” or “acceptor” location or other feature. Figure 2A-2F are cross-sectional views of die placement of donor dies (e.g., donor die 202A, 202B, 202C) on acceptor dies (e.g., acceptor die 204A and acceptor die 204B). In some embodiments, multiple steps which are depicted as occurring substantially simultaneously in Figures 2A-2F may be performed sequentially. In some embodiments, multiple steps which are depicted as occurring sequentially in Figures 2A-2F may be performed substantially simultaneously. In some embodiments, multiple donor dies may be aligned or placed on their respective acceptor dies substantially simultaneously, including donor dies which are proximate (including adjacent) or distant (e.g., non-adjacent but within the same acceptor substrate). In someembodiments, steps may be performed in a different order.

[0058] Figure 2A is a cross-sectional view of donor dies 202A-202C which are to be placed on acceptor dies 204A-204B (e.g., acceptor locations). The donor dies 202A-202C are supported by a carrier 214. The donor dies 202A-202C may be adhered to the carrier 214 in any appropriate manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, van der Waals adhesion, mechanical interlocking, surface reaction, static friction, gravitational force, etc. The donor dies 202A-202C may be adhered to the carrier 214 by use of, for example, an adhesive (e.g., glue), such as an organic, polymer glue. The carrier 214 may be a transparent substrate, such as glass, sapphire, polymer, etc. substrate. The donor dies 202A-202C may be placed on the carrier 214 by any appropriate method, such as by a pick and place tool. The carrier 214 may be supported by a chuck or any other appropriate support structure.

[0059] The acceptor dies 204A-204B (e.g., acceptor locations) are supported by a support structure 216. In an embodiment, the acceptor dies 204A-204B may be part of an undiced or partially diced acceptor wafer. The acceptor dies 204A-204B may be adhered to the support structure 216 in any appropriate manner, such as by vacuum adhesion, electrostatic adhesion, intermolecular adhesion, mechanical interlocking, surface reaction, static friction, gravitational force, etc. The acceptor dies 204A-204B may be adhered to the support structure 216 by use of, for example, an adhesive (e.g., glue), such as an organic, polymer glue. In an embodiment, where, for example, the acceptor dies 204A-204B are diced die, the support structure may be a carrier (e.g., like carrier 214) and may be a transparent substrate, such as glass, sapphire, polymer, etc. substrate. The acceptor dies 204A-204B may be placed on the support structure 216 by any appropriate method, such as by a pick and place tool. The support structure 216 may be, or may be supported by, a chuck or any other appropriate structure.

[0060] The donor dies 202A-202C and the acceptor dies 204A-204B may be aligned with one another at alignment points 203A and 205A (for donor die 202A and acceptor die 204A), alignment points 203B and 205B (for donor die 202B and acceptor die 204B), and alignment points 203C and 205 C (for donor die 202C and acceptor die 204B). In some embodiments, multiple donor die may be placed on a single acceptor die, and vice versa, such as depending on integration goals. The alignment points 203A-203C are depicted for the donor dies 202A-202C, while the alignment points 205A-205C are depicted for the acceptor dies 204A-204B. These alignment points are provided for ease of description only and need not be physical features. There may be multiple alignment points per die. The alignment points may be alignment marks (for example, the alignment marks of Figure ID), die edges, die comers, other features on edges or surfaces of die, a substrate, or other structures. The alignment points may be used to align donor and acceptor die or other substrates, such as by measurement of the locations of various alignment points and then adjustment of the position of the donor or acceptor die, such as by movement of a carrier supporting the die, to align an alignment point of the donor die with an alignment point of the acceptor die (or vice versa). The alignmentpoints may be aligned directly to one another (e.g., as depicted in Figures 2A-2F). In some embodiments, the alignment points may be aligned relative to one another (e.g., in a predetermined relationship, such as separated by a vector), such as depicted in the bottom of Figure ID, where the alignment marks are non-overlapping.

[0061] In Figure 2A, the carrier 214 (or the support structure 216 which forms a carrier) may be positioned, such as in the X-Y plane, in order to align the alignment point 203A of the donor die 202A with the alignment point 205A of the acceptor die 204A.

[0062] In Figure 2B, the donor die 202A may be released from the carrier 214 by any appropriate mechanism, such as release mechanism 230A. The donor die 202A meets the acceptor die 204A (e.g., an acceptor location) at alignment point 207A. The release of the donor die 202A may be facilitated by gravity, by electrostatic forces, by physical forces, radiation mediated release, etc. The alignment of the donor die 202A and the acceptor die 204A at the alignment point 207A (which represents a combination of the alignment point 203 A and the alignment point 205 A of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment (e.g., attraction of one area of the donor die 202A to a corresponding area of the acceptor die 204A). In an embodiment, the release occurs while donor die 202A is in (at least partial) contact with acceptor die 204A. In an embodiment, the release occurs before donor die 202A is in contact with the acceptor die 204A.

[0063] In Figure 2C, the carrier 214 (and alternately or additionally the support structure 216 which forms a carrier) may be moved to bring another donor die (e.g., the donor die 202C) into alignment with another acceptor die or location (e.g., the acceptor die 204B). The alignment of alignment point 203 C (of donor die 202C) and alignment point 205 C (of acceptor die 204B) may be based on measurements of the relative positions of the alignment points (such as using an alignment mark or feature on a die or carrier structure, using a position of an alignment point on another donor or acceptor die, etc.). The alignment of alignment point 203C (of donor die 202C) and alignment point 205 C (of acceptor die 204B) may be based on one or more substantially simultaneous measurement of the relative positions of an alignment point, such as using an alignment mark or feature of a die or carrier structure, using an alignment target or feature of another donor or acceptor die, etc. Although alignment of only one donor die (e.g., the donor die 202C) and acceptor die (e.g., the acceptor die 204B) is depicted, alignment of one or more sets of donor and acceptor dies or substrates may occur substantially simultaneously, such as if for a given relative position of the carrier 214 and the support structure 216 the alignment points of multiple donor dies are aligned with the alignment points of multiple acceptor dies. However, the ability to place multiple donor dies substantially simultaneously may depend on the placement of the donor dies on the carrier 214 and the ability of the release mechanism to release multiple donor dies.

[0064] In Figure 2D, the donor die 202C may be released from the carrier 214 by any appropriate mechanism, such as release mechanism 230C. The donor die 202C meets the acceptor die 204B at alignment point 207C. The release of the donor die 202C may be facilitated by gravity, byelectrostatic forces, by physical forces, radiation mediated release, etc. The alignment of the donor die 202C and the acceptor die 204B (e.g., an acceptor location) at the alignment point 207C (which represents a combination of the alignment point 203 C and the alignment point 205 C of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment. In an embodiment, the release occurs while donor die 202B is in (at least partial) contact with acceptor die 204B. In an embodiment, the release occurs before donor die 202B is in contact with the acceptor die 204B.

[0065] In Figure 2E, the carrier 214 (and alternately or additionally the support structure 216 which forms a carrier) may be moved to bring another donor die (e.g., the donor die 202B) into alignment with another acceptor die (e.g., the acceptor die 204B). The alignment of alignment point 203B (of donor die 202B) and alignment point 205B (of acceptor die 204B) may be based on previous measurements of the relative positions of the alignment points (such as using an alignment mark on a die or carrier structure, using an alignment point on another donor or acceptor die, etc.). The alignment of alignment point 203B (of donor die 202B) and alignment point 205B (of acceptor die 204B) may be based on one or more substantially simultaneous measurement of the relative positions of an alignment point, such as using an alignment mark or feature of a die or carrier structure, using an alignment target or feature of another donor or acceptor die, etc. As depicted, the donor die 202B and the donor die 202C are aligned to the same acceptor die (e.g., the acceptor die 204B). In some embodiments, the donor die are placed on the acceptor die in a substantially one-to-one relationship (e.g., as depicted for the donor die 202A and the acceptor die 204A). In some embodiments, multiple donor die (or acceptor die) may be placed on the same acceptor die (or donor die). In some embodiments, multiple donor die (or acceptor die) may be placed on un-diced (e.g., unseparated) acceptor die (or donor die), such as all or part of a substrate containing acceptor die (or donor die). In some embodiments, a donor die may be placed on a acceptor die that has multiple die, including stacked (e.g., bonded) die, such as in a three layer die bonding stack.

[0066] In Figure 2F, the donor die 202B may be released from the carrier 214 by any appropriate mechanism, such as release mechanism 230B. The donor die 202B meets the acceptor die 204B at alignment point 207B. The release of the donor die 202B may be facilitated by gravity, by electrostatic forces, by physical forces, radiation mediated release, etc. The alignment of the donor die 202B and the acceptor die 204B at the alignment point 207B (which represents a combination of the alignment point 203B and the alignment point 205B of Figure 2A) may be assisted by any appropriate alignment mechanism, including self-alignment. In an embodiment, the release occurs while donor die 202B is in (at least partial) contact with acceptor die 204B. In an embodiment, the release occurs before donor die 202B is in contact with the acceptor die 204B.

[0067] Figures 3A-3J are schematic diagrams illustrating portions of an example system 301 for die bonding. Figures 3A-3J are described with reference to “donor” (e.g., a donor substrate or wafer, a donor die, etc.) and “acceptor” (e.g., an acceptor location, an acceptor substrate or wafer, an acceptordie, etc.), which are relative descriptors as used herein and donor may instead be acceptor and vice versa. Each of Figures 3A, 3C, 3E, 3G, and 31 is a plane view of the system 301 during placement of donor die on an acceptor die (e.g., an acceptor location). Each of Figures 3B, 3D, 3F, 3H, and 3J is a cross-sectional view of the system 301 during placement of donor die on the acceptor die. The views of the system 301 in various figures represent different operations of the system 301, but operations depicted as occurring in different figures may occur at different times or may instead be performed simultaneously and operations depicted as occurring in the same figure may instead be performed individually or at different times. A donor substrate 300 and an acceptor substrate 350 are depicted as circular, but may instead be any appropriate shape, including rectangular, square, etc. The donor substrate 300 (and acceptor substrate 350) may be the substrate in or on which the donor die (or acceptor die) have been formed. The donor substrate 300 (or acceptor substrate 350) may be a “reconstructed wafer”, in which donor die (acceptor die) (or other disparate portions of a semiconductor substrate) are arranged or supported on a carrier, e.g., to be in position suitable for die bonding. So, the donor substrate 300 (acceptor substrate 350) may be a carrier and donor die (acceptor die), where the donor die (acceptor die) may be held (e.g., adhered) to the carrier by any appropriate method, such as by gravitational force, by adhesive (e.g., organic, polymer adhesive), by electrostatic forces, etc. The donor substrate 300 (acceptor substrate 350) may contain previously tested donor die (acceptor die), such as donor die (acceptor die) that passed a failure analysis or other post fabrication testing. The donor substrate 300 (acceptor substrate 350) may contain donor die (acceptor die) from the same or different semiconductor substrates (e.g., fabrication substrates), including donor die (acceptor die) of different types, different dimensions, etc. The donor substrate 300 (acceptor substrate 350) may have donor die (acceptor die) placed on the donor substrate 300 (acceptor substrate 350) by any appropriate method, such as a pick and place tool. The donor substrate 300 (acceptor substrate 350) may be supported, such as by a carrier structure, vacuum chuck, electrostatic chuck, etc., by either a top side (e.g., fabrication face) or backside (e.g., bulk substrate or carrier structure face) or by different faces at various points. The donor substrate 300 or donor die (acceptor substrate 350 or acceptor die) may have fabricated devices on multiple faces, such as through silicon vias (TSVs), contact pads, etc., such that both atop side and backside are fabrication faces.

[0068] In Figure 3A, the donor substrate 300 may be placed on a substrate chuck 320A. The substrate chuck 320A may be an appropriate substrate chuck, such as to support the donor substrate 300 in the form of a semiconductor substrate or a carrier of the donor substrate 300. The substrate chuck 320A may be supported by a support structure 322A. The support structure 322A may be a moveable support structure, which may move in the X-Y plane, such as from a first position where the substrate chuck 320A receives the donor substrate 300 to a second position where the donor substrate 300 may be subjected to metrology. The substrate chuck 320A may comprise (e.g., support) one or more die actuators or other mechanical or electrical actuators which may move a donor die or the donor substrate 300 in one or more dimensions, including in the X-Y plane, in the Z-direction, rotationally,etc. The substrate chuck 320A may have one or more alignment marks, such as to allow a camera or other measurement system to track the position of the substrate chuck 320A. The substrate chuck 320A may have multiple sets of alignment marks, such as coarse alignment marks or fine alignment marks. The substrate chuck 320A may move, such as by action of the support structure 322A, from one position to another, in free space, etc. The support structure 322A may be configured to move in multiple directions and in multiple scales (e.g., in a coarse step and a fine step), such as by multiple motors or steppers. The support structure 322A may be activated by a controller of the example system 301 — where the controller or processor system of the example system 301 (not depicted in Figures 3A - 3J, but which may be formed by or included in the computer system CS shown in Figure 11 and described below) may also control the placement of the donor substrate 300 on the substrate chuck 320A and other operations described herein.

[0069] The substrate chuck 320A may have a measurement point (or alignment point), such as identified by a cruciform measurement mark 327 and a round zero measurement mark 328, which are provided merely as examples and where any appropriate zero measurement mark may be used. The measurement point may be used to place the donor substrate 300 on the substrate chuck 320A, such as during movement of the substrate onto the chuck (for example, by insertion of the donor substrate by a substrate handler). The measurement point may be used to measure relative positions of the donor die of the donor substrate 300 once the donor substrate 300 is placed on the substrate chuck 320A. The placement of the donor die may be measured, such as with up to nm precision, with respect to the measurement point. The measurement of the position of the donor die after their placement may be obtained from any appropriate measurement system, such as optical microscopy, reflectometry, etc.

[0070] Figure 3A also depicts a further substrate chuck 320B on a support structure 322B. The substrate chuck 320B may be any appropriate substrate chuck, such as substantially identical to the substrate chuck 320A. The support structure 322B may be any appropriate support structure, such as substantially identical to the support structure 322A. In some embodiments, the substrate chuck 320B and the substrate chuck 320A may be substantially indistinguishable. In some embodiments, the support structure 322B and the support structure 322A may be substantially indistinguishable. Although two substrate chucks and two support structures are depicted, in some embodiments more or less substrate chucks and support structures may be present in the system 301. Operations depicted as performed by the substrate chuck 320B (substrate chuck 320A) may instead or additionally be performed by any appropriate substrate chuck. Likewise, operations depicted as performed by the support structure 322B (support structure 322A) may instead or additionally be performed by any appropriate support structure.

[0071] Figure 3A also depicts flipper 330. The flipper 330 may be any appropriate apparatus in system 301 which may flip a substrate (e.g., donor substrate 300), such as about the longitudinal axis or plane of the donor substrate 300 depicted in Figure 3A. The flipper 330 will be described in more detail in reference to Figures 3E and 3F.

[0072] In Figure 3B, a cross-sectional view of a donor substrate 300 is depicted. The donor substrate 300 comprises a carrier 314 which supports one or more donor die (e.g., donor die 302A-302C). The substrate may have one or more alignment points, such as alignment point 315, used to measure a relative position of the donor die 302A-302C with respect to the carrier. The donor die may have alignment points, such as alignment points 303A-303C for donor die 302A-302C, respectively. The alignment points are provided as schematic representations in these drawings for ease of description, and may be any appropriate alignment points, including alignment marks, fabricated features, edge features, etc., as previously described. While the donor substrate 300 is on a substrate chuck (e.g., the substrate chuck 320A of Figure 3A), the positions of the donor die (e.g., the donor die 302A-302C) are measured, such as by metrology tool 340A. The positions may be measured as absolute positions, relative positions, positions relative to other die, positions relative to an alignment point of the substrate, etc. The measured positions may be stored by a controller (or sensor system, which may be formed by or included in the computer system shown in Figure 11 and described below) of the system 301, such as for later positioning of the donor substrate 300. The metrology tool 340A may include an optical sensor such as a camera, including a still camera, a video camera, etc., or other optical sensors. The metrology tool 340A may include a capacitive sensor or other sensors. The metrology tool 340A may be any appropriate tool for measurement of a position of a donor die, measurement of a position of an alignment point of the donor die, measurement of a position of alignment mark of the donor die, etc.

[0073] In Figure 3C, the donor substrate 300 is supported by the substrate chuck 320A, which is supported by the support structure 322A. Once the position of the donor dies are measured, the substrate chuck 320A may be moved, such as out of the measurement position. The support structure 322A may move (e.g., along direction 324) to the position of the support structure 322B, while the support structure 322B may move (e.g., along direction 323) to the position of the support structure 322A. The positions are provided as examples, and the support structures may move to different positions. For example, in some embodiments, the support structure 322B may move to a loading position, such as to receive an acceptor substrate (e.g., the acceptor substrate 350). The substrate chuck 320A may then occupy another position in the system 301 (e.g., a bonding position, a flipping position, etc.). The position the substrate chuck 320A moves to after measurement of the positions of the donor die (e.g., after the measurement depicted in Figure 3B) may be configured to allow the flipper 330 to accept the donor substrate 300 from the substrate chuck 320A.

[0074] In Figure 3D, the movement of the donor substrate 300 to a position other than the measurement position of Figure 3B is depicted. The movement may correspond to the movement of the donor substrate 300 in the direction 324, such as by movement of the support structure 322A, of Figure 3C. This figure is provided to show continuity of the die bonding process in both plane and cross-sectional views, but may occur substantially simultaneously with the process depicted in Figure 3C or Figure 3E, where, as previously described, steps which are depicted as occurring separately,including sequentially, may be performed substantially simultaneously.

[0075] In Figure 3E, the acceptor substrate 350 may be placed on a substrate chuck 320B. The substrate chuck 320B may be an appropriate substrate chuck, as previously described. The substrate chuck may be supported by a support structure 322B, which may be any appropriate support structure, as previously described.

[0076] In Figure 3E, the donor substrate 300 may be transferred to the flipper 330. The flipper 330 may accept (e.g., take) the donor substrate from the substrate chuck 320A, such as by use of edge clamps, vacuum clamps, finger prongs, etc. The flipper 330 may hold the donor substrate by one or more edges (e.g., one or more edges of the carrier 314) or one or more sides (for example, a backside of the carrier 314 which does not support the donor die). The flipper 330 may rotate the donor substrate 300 upside down (e.g., with respect to the direction of the gravitational force). The flipper 330 may hold the donor substrate 300 upside down (e.g., opposite to) with respect to the X-Y plane which it previously occupied — or in any other appropriate direction. The flipper 330 may hold the donor substrate 300 or place the donor substrate 300 into a support structure, such that the donor substrate 300 faces the plane of the acceptor substrate 350. The flipper 330 may rotate or displace the donor substrate 300 in the X-Y plane, as well as displace or rotate the donor substrate 300 out of the X-Y plane. The flipper 330 may be any appropriate rotational or translational apparatus in the system 301.

[0077] In Figure 3F, a cross-sectional view of the acceptor substrate 350 is depicted. The acceptor substrate 350 comprises a carrier 316 which supports one or more acceptor dies (e.g., acceptor die 304A-304C). The substrate may have one or more alignment points, such as alignment point 317. The acceptor die may have alignment points, such as alignment points 305A-305C for acceptor die 304A- 304C, respectively. The alignment points are provided as schematic representations in these drawings for ease of description, and may be any appropriate alignment points, including alignment marks, fabricated features, edge features, etc., as previously described. While the acceptor substrate 350 is on the substrate chuck (e.g., the substrate chuck 320B of Figure 3E), the positions of the one or more acceptor dies (e.g., the acceptor die 304A-304C) are measured, such as by metrology tool 340B. The metrology tool 340B may be the same as the metrology tool 340A used to measure the positions of the one or more donor dies (e.g., the donor die 302A-302C of Figure 3B) or a different metrology tool. The metrology tool 340B may measure a different number of positions, substantially different positions (e.g., arranged differently on the acceptor substrate 300 than the positions on the donor substrate 300 as measured by the metrology tool 340A), different positions relative to dies (e.g., the donor die 302A-302C versus the acceptor die 304A-304C), etc. than the metrology tool 340A. The positions may be measured as absolute positions, relative positions, positions relative to other die, positions relative to an alignment point of the substrate, etc. The measured positions may be stored by a controller (or sensor system, which may be formed by or included in the computer system shown in Figure 11 and described below) of the system 301, such as for later positioning of the acceptorsubstrate 350. The metrology tool 340B may include an optical sensor such as a camera, including a still camera, a video camera, etc., or other optical sensors. The metrology tool 340B may include a capacitive sensor or other sensors. The metrology tool 340B may be any appropriate tool for measurement of a position of a donor die, measurement of a position of an alignment point of the donor die, measurement of a position of alignment mark of the donor die, etc. The acceptor substrate 350 may experience deformation due to the holding by a substrate chuck, etc. The metrology tool 340B may also enable determination of deformation of the acceptor substrate by measuring locations. A controller may determine the deformation of the acceptor substrate 350 based on those measured locations (e.g., from curve fitting, using a physical deformation model, etc.).

[0078] In Figure 3F, the donor substrate 300 is supported by a bonding support structure 332. The bonding support structure 332 may be part of the flipper 330 (of Figure 3E) or the donor substrate 300 may be placed into the bonding support structure 332 by the flipper 330. The bonding support structure 332 may hold the donor substrate 300 opposite to a plane of the acceptor substrate 350. The bonding support structure 332 may hold the donor substrate by the carrier 314, including by one or more edges of the carrier 314. While in the bonding support structure 332, the position of the donor substrate 300 may be measured, such as by metrology tool 340C, to enable, for example, relative positioning between the donor substrate 300 and the acceptor substrate 350. The metrology tool 340C may be any appropriate metrology tool. The metrology tool 340C may measure locations of the donor die (e.g., the donor die 302A-302C), locations of the alignment point 315, etc. The metrology tool 340C may measure significantly fewer locations than the metrology tool 340A or 340B, and the controller may determine the position of the acceptor substrate 350 based on those fewer locations (e.g., from curve fitting, using physical deformation models, etc.). The controller may determine updated positions for the donor die (e.g., the donor die 302A-302C) based on a combination of the measured locations of the donor die 302A-302C (such as from Figure 3B) and the measured position of the donor substrate 300. The donor substrate 300 may experience deformation due to holding by a substrate chuck, the movement of the flipper 330, suspension from the bonding support structure 332, etc. The metrology tool 340C may also enable determination of deformation of the donor substrate by measuring locations. As noted above, the metrology tool 340C may measure significantly fewer locations than the metrology tools 340A and 340B, and the controller may determine the deformation of the donor substrate 300 based on those fewer locations (e.g., from curve fitting, using a physical deformation model, etc.) than those measured by the metrology tool 340A on the donor substrate 300 or by metrology tool 340B on the acceptor substrate 350.

[0079] In Figure 3G, the acceptor substrate 350 is supported by the substrate chuck 320B, which is supported by the support structure 322B. Once the position of the acceptor dies are measured, the substrate chuck 320B may be moved, such as to align with the donor substrate 300 supported by the flipper (e.g., supported by the bonding support structure 332 of Figure 3F). The support structure 322B may move (e.g., along direction 326) to the position of the support structure 322A, while thesupport structure 322A may move (e.g., along direction 325) to the position of the support structure 322B. The positions are provided as examples, and the support structures may move to different positions. For example, in some embodiments, the support structure 322A may move to a loading position, such as to receive an additional acceptor substrate (e.g., the acceptor substrate 350). The substrate chuck 320B may then occupy another position in the system 301 (e.g., a bonding position). The position the substrate chuck 320B moves to after measurement of the positions of the acceptor die (e.g., after the measurement depicted in Figure 3F) may be configured to place a donor die of the donor substrate 300 onto the acceptor die of the acceptor substrate 350. The substrate chuck 320B may be aligned with the donor substrate 300 in the flipper 330, which may be held above the plane of the substrate chuck 320B (as depicted in Figure 3G for a top down view in which the donor substrate 300 is at least partially above the plane of the substrate chuck 320B (e.g., obscuring the substrate chuck 320A).

[0080] In Figure 3H, the donor substrate 300 and the acceptor substrate 350 are aligned. The donor substrate 300 may be aligned to the acceptor substrate 350 by movement of the bonding support structure 332, such as in any of the directions or orientations 333. The acceptor substrate 350 may be aligned with the donor substrate 300 by movement of a substrate chuck (e.g., the substrate chuck 320B of Figure 3G) or the support structure (e.g., the support structure 322B of Figure 3G). The donor substrate 300 and the acceptor substrate 350 may be aligned to one another, including by both coarse and fine alignment, such as by alignment of the relative positions of one or more alignment point (e.g., the alignment point 315 of the donor substrate 300 and the alignment point 317 of the acceptor substrate 350). In some embodiments, the donor substrate 300 and the acceptor substrate 350 may be aligned, such as by coarse alignment. In some embodiments, once the donor substrate 300 and the acceptor substrate 350 are aligned, one or more donor die of the donor substrate 300 may be aligned with one or more acceptor die of the acceptor substrate 350. In Figure 3H, the alignment of the donor die 302B with the acceptor die 304B (e.g., of the alignment point 303B of donor die 302B with the alignment point 305B of acceptor die 304B) is depicted. Once a donor die is aligned with a acceptor die, that donor die may be placed on the acceptor die, by any appropriate method, such as die actuator activation, gravitational acceleration, electrostatic actuation, etc.

[0081] In Figure 31, an additional donor substrate (e.g., donor substrate 300-2 having a carrier 314-2) is placed on the substrate chuck 320A for additional placement of donor dies on acceptor dies. In some embodiments, the additional donor substrate may be placed on the substrate chuck 320A after the substrate of the previous donor substrate is removed from the substrate chuck 320A — for example, if the substrate of a donor substrate is removed from the flipper 330 and re-placed on the substrate chuck 320A. In some embodiments, the previous donor substrate may be removed from the flipper 330 without recourse to the substrate chuck 320A, such as by removal from the flipper to an additional substrate chuck (not depicted) or any other appropriate removal procedure. The additional donor substrate may be placed on the substrate chuck 320A after the previous donor substrate isaccepted by the flipper 330 or at any time when the substrate chuck 320A (or another substrate chuck) is free. The additional donor substrate (e.g., the donor substrate 300-2) may be substantially identical to or different from the previous donor substrate (e.g., the donor substrate 300). The processing of the donor substrate 300-2 by placement of the donor dies on acceptor dies may proceed as previously described in relation to Figures 3A-3H, such as by placement on an additional acceptor substrate (not depicted). The donor substrate 300-2 may be placed on the substrate chuck 320A while the donor dies of the donor substrate 300 are placed on the acceptor dies of the acceptor substrate 350, such as substantially simultaneously.

[0082] In Figure 3J, the positions of the donor die (e.g., the donor die 302A-2 to 302C-2) or of mark 315-2 are measured, as previously described in relation to Figure 3B.

[0083] In Figure 3J, additional donor die of the donor substrate 300 are placed on the acceptor die of the acceptor substrate 350. The position of the donor substrate 300, the acceptor substrate 350, or a combination thereof may be adjusted to align an additional donor die of the donor substrate 300 with a acceptor die of the acceptor substrate 350. As depicted, the donor substrate 300 is positioned (such as by movement in the directions or orientations 334) to align the alignment point 303A of the donor die 302A with the alignment point 305A of the acceptor die 304A. The donor die 302A may then be placed on the acceptor die 304A by any appropriate method, such as previously described. The donor die 302B is depicted as bonded to the acceptor die 304B, subsequent to their alignment at alignment point 307B in Figure 3H. As will be realized, the various steps of Figures 3A-H can be repeated as appropriate to bond multiple dies and process multiple donor and acceptor substrates.

[0084] Figures 4-9 illustrate additional details of the alignment system(s) and method(s) described above. Figures 4-9 illustrate the use of image based, capacitive, or other alignment or overlay sensors to generate control information for die to wafer bonding operations. These techniques can be used prior to bonding (e.g., to generate feedforward information) or to diagnose bonding process issues (e.g., to generate feedback information). These techniques can be integral to a bonding system or method such as one or more of those illustrated in Figures 1A - ID, 2A - 2F, or 3A - 3J, or may be external to such systems and methods.

[0085] For example, Figure 4 illustrates measurement of semiconductor donor die 402 position on a carrier 404 carrying donor dies 402. Carrier 404 and donor dies 402 may be similar to one or more of the carriers and donor dies described above. Each of the one or more semiconductor donor dies 402 may comprise one or more die marks (e.g., similar to or the same as what is shown in Figure ID and described above, and what is shown in Figures 6 and 7 and described below) usable in determining the position of the one or more semiconductor donor dies 402 relative to one or more carrier marks 406 (also see Figures 6 and 7). The one or more die marks may comprise one or more features of a die, and the one or more carrier marks 406 may comprise one or more features of carrier 404 used to determine the position of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406. The one or more die marks and the one or more carrier marks 406 may comprisethe same or different types of mark. In some embodiments, for example, the one or more die marks or one or more carrier marks 406 comprise one or more periodic marks, such as gratings. However, the marks may be non-periodic, or have non-periodic portions, for example. In some embodiments, the one or more die marks or one or more carrier marks 406 comprise one or more alignment marks, one or more image based overlay marks, features of a die or carrier (e.g., a feature of a semiconductor structure), capacitive patterns, or other marks.

[0086] The one or more semiconductor donor dies 402 may be aligned to one or more corresponding acceptor locations, referenced to the one or more carrier marks 406, for bonding, based on the position(s) of the one or more semiconductor donor dies 402 or other information. The one or more acceptor locations may be located on a semiconductor wafer, as shown in Fig. 1A-1D, 2A-2F, and 3A-3J, and described above, or in other locations. One or more acceptor locations may comprise one or more corresponding acceptor semiconductor dies, for example.

[0087] As shown in Figure 4, the carrier 404 may also comprise one or more carrier alignment marks 408. Positions of the one or more carrier alignment marks 408 relative to the one or more carrier marks 406 are known. These positions may be known based on design information for carrier 404, for example, prior measurement of the positions of the carrier alignment marks 408 relative to the one or more carrier marks 406, or from other sources. The carrier 404 may be aligned to one or more acceptor locations for bonding based on the one or more carrier alignment marks 408, the position of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406, or other information. Aligning may be based on the carrier alignment marks 408 because the positions of the one or more carrier alignment marks 408 relative to the one or more carrier marks 406, and the positions of the one or more carrier marks relative to the one or more semiconductor dies 402, are already known, having been previously determined as described herein. This may simplify bonding alignment operations, or have other advantageous effects. For example, in some embodiments, rapid donor die 402 to carrier 404 measurements may be made prior to bonding, such that during bonding only carrier alignment marks 408 need be measured, and alignment between donor dies 402 and acceptor locations may be performed based on the measured carrier alignment mark 408 positions, and the positions of the donor dies 402 that were referenced to the carrier marks 406.

[0088] In some embodiments, an acceptor substrate such as an acceptor die or acceptor wafer, or an acceptor carrier structure (such as one or more of those described above), comprising the one or more acceptor locations, comprises one or more acceptor (or acceptor carrier structure) alignment marks. The (donor) carrier 404 may be aligned to the acceptor substrate or acceptor carrier structure for bonding based on the one or more alignment marks on the acceptor substrate or acceptor carrier structure, the (donor) carrier alignment mark 408 positions, and the position of the one or more semiconductor donor dies 402 referenced to the one or more carrier marks 406, for example.

[0089] Though measurement prior to bonding is described in the example above, note that some or all of these measurements may also or instead be carried out during bonding. For example, in someembodiments, determining the position(s) of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406 on the carrier 404 is performed separately from, and in advance of, bonding (e.g., as described above). However, in some embodiments, determining the position of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406 on the carrier 404 may be performed during bonding, for example when the one or more semiconductor donor dies 402 approach the one or more corresponding acceptor locations.

[0090] Figure 5 illustrates how, in some embodiments, the position of the one or more semiconductor donor dies 402 (Figure 4) relative to the one or more carrier marks 406 (Figure 4) is provided 500 (e.g., by a controller or processor system that is part of the system 301 described above and shown in Figure 3A -3J, or by computer system CS shown in Figure 11 and described below, for example) as a feedforward signal to a donor die or acceptor substrate positioning system 501 (e.g., similar to or the same as a system described above with respect to Figures 1A-1D, 2A-2F, or 3A-3J) for bonding 502. In this example, providing 500 the position of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406 as a feedforward signal may comprise providing 1000 or more such measurements. The positions of (donor) carrier alignment marks 408 (Figure 4) and acceptor substrate or acceptor structure alignment marks may be measured (504 and 506, respectively in Figure 5), and alignment between donor dies 402 and acceptor locations may be performed based on the measured carrier alignment mark 408 and acceptor substrate or acceptor structure mark positions, and the positions of the donor dies 402 that were referenced to the carrier marks 406. This may simplify bonding alignment operations because only about 50 carrier alignment mark 408 and acceptor substrate or acceptor structure mark measurements need be made as part of bonding operations (e.g., instead of 1500 or more as in prior systems). In some embodiments, once bonding 502 is complete, the position of the one or more semiconductor donor dies 402 relative to the one or more carrier marks 406, along with an indication of bonding quality or other information, may be provided as a feedback signal for bonding. For example, an indication of bonding quality may comprise the position of the one or more semiconductor dies 402 relative to (one or more features associated with) an acceptor location (i.e., an indication of whether a die 402 actually landed in its intended position) or other information.

[0091] In some embodiments, the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by one or more sensors such as an optical sensor, a capacitive sensor, bright field microscopy systems, dark field microscopy systems, a level sensor, or other sensors. In some embodiments, the one or more sensors comprise multiple sensors operating in parallel. In some embodiments, the one or more sensors comprise an image based alignment or overlay sensor. The one or more sensors may be configured to irradiate the one or more semiconductor dies with one or more intensities or colors of light radiation, obtain multiple images of the one or more dies, obtain information at one or more different height positions of the one or more sensors relative to the one or more dies, or use any other technique that facilitates operation of theone or more sensors as described herein. The one or more sensors may be or be part of metrology tool 340A, 340B, or 340C (e.g., shown in Fig. 3A - 3J and described above), or other components of the systems described herein.

[0092] For example, returning to Figure 4, an optical sensor may comprise a camera or other optical sensors. The optical sensor may have a field of view large enough to include one or more of the one or more die 402 marks and one or more of the one or more carrier 404 marks 406. These marks may be similar to and / or the same as the marks shown in Figure ID and described above, for example. The one or more carrier 404 marks 406 may be sufficiently dense to ensure that at least one of the one or more carrier 404 marks 406 is within the field of view. Sufficient density may comprise one carrier 404 mark 406 within 100 or less microns of another carrier 404 mark 406 on the carrier 404, for example. In this example, the field of view may be less than or equal to 30,000 square microns. This field of view is configured to accommodate die 402 marks or sufficiently dense carrier 404 marks 406 that have an area of 4000 square microns or less, or other sizes. For example, the die 402 marks or carrier 404 marks 406 may be about 30pm x 30pm, or have other dimensions.

[0093] In some embodiments, 1000 or more die to carrier alignment values may be determined (e.g., as described with respect to Figure 5 above). Determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks may comprise determining (1000 or more) die to carrier overlay values, for example.

[0094] Figures 6 and 7 illustrate examples of die 402 marks 600, carrier 404 marks 406, an optical sensor 700 and a field of view 702, a sufficient density 704 of carrier 404 marks 406 for alignment, and other aspects of embodiments described herein. Several example arrangements with various different dimensions are described below. It should be noted that these are only examples. Many other arrangements and dimensions are possible. Figure 6 illustrates die 402 marks 600 in two comers of a die 402, as one possible location example. In some embodiments, marks 600 (or marks 406) may comprise gratings, with approximately 3pm pitches. Marks 600 may be up to about 20pm from an edge of a die 402, for example. As shown in Figure 7, the optical sensor 700 may comprise a camera or other optical sensors. The optical sensor 700 may have a field of view 702 large enough to include one or more of the one or more die 402 marks 600 and one or more of the one or more carrier 404 marks 406. The one or more carrier 404 marks 406 may be sufficiently dense 704 to ensure 710 that at least one of the one or more carrier 404 marks 406 is within the field of view 702 (though there are many more in this example). As described above, sufficient density may comprise one carrier 404 mark 406 within 100 or less microns of another carrier 404 mark 406 on the carrier 404. For example, marks 406 may be spaced every 50-100pm. In Figure 7, the field of view 702 (length L x width W) may be less than or equal to 30,000 square microns. In some embodiments, the field of view 702 may be about 150pm x 150pm, as one possible example. This field of view is configured to accommodate die 402 marks 600 or sufficiently dense carrier 404 marks 406 that have an area A (only shown for a carrier mark 406 in this example) of 4000 square microns or less, or other sizes. For example, the die402 marks 600 or carrier 404 marks 406 may be about 30pm x 30pm, or have other dimensions. The field of view 702 may accommodate an approximately 20pm placement uncertainty of dies 402, be configured for resolving mark 406 or mark 600 pitches down to about 2pm or larger, or have other characteristics.

[0095] As another sensor example, the one or more carrier marks may comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks may be determined by a capacitive sensor. In this example, the capacitive sensor and the capacitive pattern may be part of a capacitive sensing arrangement comprising the capacitive sensor, a capacitive pattern on a carrier or a donor die, or other components. The position of the carrier of the plurality of donor dies may be determined using the capacitive sensing arrangement, and the donor dies may be aligned to one or more corresponding acceptor locations for bonding based on the determined position (e.g., as described herein).

[0096] For example, Figure 8 illustrates a capacitive sensing arrangement 800. Arrangement 800 comprises electrostatic clamps 802, a donor carrier 804 and donor die 806, an acceptor carrier 808 and acceptor die 810, a voltage source 812, a capacitive sensor 816 and other components. In this example, opposite charges 814 induced on features (e.g., copper or tungsten vias) by an alternating current attract the dies 806 and 810, and facilitate alignment using capacitance. In this example, the one or more carrier 804 marks 818 may comprise a capacitive pattern, and the position of the one or more semiconductor donor dies 806 referenced to the one or more carrier 804 marks 818 may be determined by the capacitive sensor 816. In other words, the position of the carrier 804 of (the plurality of) donor die(s) 806 may be determined using the capacitive sensing arrangement 800, and the donor die(s) 806 may be aligned to one or more corresponding acceptor locations (acceptor die 810 in this example) for bonding based on the determined position (e.g., as described herein).

[0097] In some embodiments, the capacitive pattern is read using a capacitive sensor 816 located on a wafer stage at a bonding process position. Capacitive sensors such as sensor 816 are generally small compared to optical alignment sensors, and therefore possible to integrate with a wafer stage. As described above (see Figures 3A- 3J or other figures and their corresponding descriptions), the carrier 804 is transferred from an alignment process position to the bonding process position. The carrier 804 with donor dies 806 is flipped and chucked in a different manner between these two positions. This may produce carrier wafer distortion or have other effects. As a consequence, the donor dies 806 may be displaced relative to their positions based on alignment measurements at the alignment process station, and bonding station alignment operations (e.g., as described herein) are advantageous. In some embodiments, the capacitive pattern on the carrier 804 may also be used to measure initial alignment at the alignment process station. This may be enabled, for example, by mounting a capacitive sensor such as sensor 816 in proximity to an optical alignment sensor at the alignment process station (not shown in Figure 8).

[0098] By way of a non-limiting example of sensor 816 - comprising plate capacitors in thisexample, the capacitance is C = [Go • Gr• a • b] / d, where Go and Grare the permeabilities of free space and the electrode material respectively, a and b are the lateral dimensions of the electrodes, and d is their separation distance. C= 10 fF (is also detection limit) for a = b = 100 microns, and d = 10 micron, as one example. If detection of a displacement of 1 nm is desired, it is this change in a or b that should result in a >10 fF capacitance change. As 1 nm is 105smaller than 100 microns, it is this factor that need be gained in the lateral dimension or distance of the electrodes. If the separation distance is 10 microns, the length of the electrode should be longer by 105compared to 100 microns. This makes the electrode length 10 meters. In view of this requirement, multiple electrodes may be used. On a 1cm2die, this means about 1000 x 1000 electrodes, of about 10 microns x 10 microns in dimension may be used to measure a displacement of 1 nm in one direction. As detecting displacements in both X- and Y-directions are required, the layout of the electrodes must be configured accordingly.

[0099] Figure 9 illustrates an example electrode layout 900 (other layouts are possible) for electrodes 902 of capacitive sensor 816 (Figure 8). The layout 900 comprises a capacitive sensing pattern. The carrier 804 may comprise the “+” structure of this pattern. In this example, the array of four square electrodes 902 may be located in a wafer stage. Fields A may be connected internally, along with fields B, C, and D, so that four lines are formed. With this arrangement, an x displacement is detected as a capacitance change of A+C versus B+D. A y displacement is detected as a capacitance change of A+B versus C+D. In some embodiments, the “+” structure of this pattern may be included on the individual dies (instead of on the carrier as described above). With the electrodes 902 recessed relative to the die surface, there is a gap between the electrodes even when the dies are in contact (as they are bonded).

[0100] Note that, in some embodiments, the carrier may comprise the capacitive sensor. For example, the die marks may comprise a capacitive pattern sensed by the capacitive sensor in the carrier. Also, capacitive sensor embodiments similarly apply to an acceptor substrate, an acceptor carrier, or other acceptor related structures described herein.

[0101] Figure 10 is a flowchart which illustrates an exemplary method of alignment and placement of one or more semiconductor donor dies. Each of these operations is described in detail below. The operations of method 1000 presented below are intended to be illustrative. In some embodiments, method 1000 may be accomplished with one or more additional operations not described, or without one or more of the operations discussed. Additionally, the order in which the operations of method 1000 are illustrated in Figure 10 and described below is not intended to be limiting. In some embodiments, one or more portions of method 1000 may be implemented by one or more systems described herein, such as system 301 shown in Figure 3A - 3 J and described above, for example. In some embodiments, one or more portions of method 1000 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors or a processor systemthat forms, or forms part of computer system CS shown in Figure 11 and described below). The one or more processing devices may include one or more devices executing some or all of the operations of method 1000 in response to instructions stored electronically on an electronic storage medium. The one or more processing devices may include one or more devices configured through hardware, firmware, or software to be specifically designed for execution of one or more of the operations of method 1000, for example.

[0102] At an operation 1010, a plurality of donor die locations are obtained. This comprises determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies. The donor die locations or position may be obtained via measurement of one or more positions of the donor dies along one or more dimensions. The donor dies may lie on or be part of a donor substrate (e.g., the carrier, a semiconductor substrate, etc.), and the locations of the plurality of donor dies may be obtained with respect to the marks on that donor substrate. The locations of the plurality of donor dies may be measured in-plane (e.g., in the x-y plane). The locations of the plurality of donor dies may also be measured via a first method in-plane and measured out of plane (e.g., in the Z direction) via a second method. For example, the locations of the plurality of donor dies may be measured based on one or more images in -plane. The locations of the plurality of donor dies may be obtained from a two-dimensional image, which may show locations of an edges or comer of a donor die with respect to positions on a support structure or on a die actuator. The locations of the plurality of donor dies may be obtained based on one or more features (for example, one or more electrically active areas) on an exposed surface of the donor die. These one or more features of the donor die may be used as an alignment mark or reference mark. In some embodiments, alignment marks may be included as exposed features of the donor die. The alignment marks may be specifically added for die bonding or may be alignment marks corresponding to previous fabrication steps. The plurality of donor die locations may be measured or obtained from storage.

[0103] For example, each of the one or more semiconductor donor dies may comprise one or more die marks (e.g., similar to or the same as what is shown in Fig. ID and described above) usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks. The one or more die marks may comprise one or more features of a die, and the one or more carrier marks may comprise one or more features of the carrier used to determine the position of the one or more semiconductor donor dies relative to the one or more carrier marks. The one or more die marks and the one or more carrier marks may comprise the same or different types of mark. In some embodiments, for example, the one or more die marks or one or more carrier marks comprise one or more periodic marks, such as gratings. In some embodiments, the one or more die marks or one or more carrier marks comprise one or more alignment marks, one or more image based overlay marks, features of a die or carrier, or other marks.

[0104] In some embodiments, the position of the one or more semiconductor donor dies relative tothe one or more carrier marks is determined by an optical sensor, a capacitive sensor, or other sensors. This sensor may be or be part of metrology tool 340A, 340B, or 340C (e.g., shown in Fig. 3A - 3J and described above), or other components of the systems described herein. For example, the one or more carrier marks may comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks may be determined by a capacitive sensor. In this example, the capacitive sensor and the capacitive pattern may be part of a capacitive sensing arrangement comprising the capacitive sensor, a capacitive pattern on a carrier or a donor die, or other components. In some embodiments, the carrier may comprise the capacitive sensor. The position of the carrier of the plurality of donor dies may be determined using the capacitive sensing arrangement, and the donor dies may be aligned to one or more corresponding acceptor locations for bonding based on the determined position (e.g., as described herein).

[0105] As another example, an optical sensor may comprise a camera or other optical sensors. The optical sensor may have a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks. The one or more carrier marks may be sufficiently dense to ensure that at least one of the one or more carrier marks is within the field of view. Sufficient density may comprise one carrier mark within 100 or less microns of another carrier mark on the carrier, for example. In this example, the field of view may be less than or equal to 30,000 square microns. This field of view is configured to accommodate die marks or sufficiently dense carrier marks that have an area of 4000 square microns or less. For example, the die marks or carrier marks may be about 30pm x 30pm, or have other dimensions.

[0106] In some embodiments, 1000 or more die to carrier alignment values may be determined. Determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks may comprise determining (1000 or more) die to carrier overlay values, for example. In some embodiments, determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed separately from, and in advance of, bonding. In some embodiments, determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations. In some embodiments, the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die or acceptor substrate positioning system (e.g., as described above with respect to Figures 1A-1D, 2A-2F, 3A-3J, or Figure 5).

[0107] At an operation 1020, one or more corresponding acceptor die locations (e.g., acceptor locations) are obtained. The acceptor dies may lie on or be part of an acceptor substrate (e.g., a carrier, a semiconductor substrate, etc.), and the locations of the plurality of acceptor dies may be obtained with respect to that acceptor substrate. The locations of the plurality of acceptor die may be obtained in any appropriate method, including any of those described in reference to the operation 1010.

[0108] At an operation 1030, one or more donor dies are selected from the plurality of donor dies.The one or more donor dies may be selected based on position (e.g., along a row, along a column), displacement (e.g., donor die closest to an ideal position), thickness (e.g., thicker dies may be placed before thinner dies, including if donor dies include two or more types of dies), etc. A donor die may have a corresponding acceptor die, such as an acceptor die in a corresponding location on an acceptor substrate (e.g., acceptor die carrier structure). In some embodiments, an acceptor die may be selected, by any appropriate method, and a donor die selected based on its correspondence to the selected acceptor die. The one or more donor dies and the acceptor die(s) may be brought together such that a donor die and its corresponding acceptor die are separated by a distance which may be traversed by the die placement method. The donor die and acceptor die may be grossly aligned (e.g., coarse aligned), such as to within a threshold of coarse alignment. The donor die and acceptor die may be held in proximity by one or more substrates, chucks, actuators, adhesives, etc.

[0109] At an operation 1040, the relative position between a selected donor die and a corresponding acceptor die is adjusted to have alignment between the donor die and the corresponding acceptor die. Adjusted includes cases in which locations are minimally or substantially not adjusted (e.g., after measurement or bringing into proximity), such as if a measured location corresponds to the acceptor location within a threshold. In an embodiment, the position of the donor die may be adjusted by action of a die actuator, a substrate holder, a chuck, etc. The position of the donor die may be adjusted by action of a substrate handling apparatus. The position of the donor die may be adjusted in one or more directions, such as in the X-Y plane. Alternatively or additionally to adjustment of the location of the donor die, the position of the acceptor die may be adjusted, by any appropriate method, such as any of those previously described. Adjustment of the relative position between the donor and acceptor die may include iterative measurement of donor or acceptor die location, including as adjustment occurs.

[0110] Adjustment of the location of the donor die may occur based on an alignment location for the donor die. The alignment location may be an acceptor (e.g., acceptor location) for placement of the donor die. An acceptor (e.g., acceptor location) may be obtained, such as at operation 1020, from measurement of the acceptor die position. The acceptor may correspond to a location of the acceptor die. The acceptor may correspond to a plurality of locations on the acceptor die. The acceptor may be a position (e.g., a position in three dimensions such as along X, Y, and Z axes, positions in six directions such as along X, Y, and Z axes and with respect to angles of rotation about those axes, etc.). The acceptor may be a set of positions, for example two or more positions of or on an acceptor die to which areas of the donor die are to be bonded. Additionally or alternatively, adjustment of the location of the acceptor die may occur based on an alignment location for the acceptor die. The alignment location may be an acceptor (e.g., acceptor location) for placement of the donor die. An acceptor (e.g., acceptor location) may be obtained, such as at operation 1010, from measurement of the donor die position. The acceptor may correspond to a location of the donor die. The acceptor may correspond to a plurality of locations on the donor die.

[0111] As an alignment example, the one or more semiconductor donor dies may be aligned to one ormore corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position(s) of the one or more semiconductor donor dies or other information. The one or more acceptor locations may be located on a semiconductor wafer, or the one or more acceptor locations may comprise one or more corresponding acceptor semiconductor dies, for example. In some embodiments, a donor die carrier (such as one or more of those described above) comprises one or more carrier alignment marks, positions of the one or more carrier alignment marks relative to the one or more carrier marks are known, and the carrier may be aligned to the one or more acceptor locations for bonding based on the one or more carrier alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks. In some embodiments, a (e.g., an acceptor carrier) structure (such as one or more of those described above) comprises the one or more acceptor locations, and the structure comprises one or more alignment marks. The (donor) carrier may be aligned to the (acceptor carrier) structure for bonding based on the one or more alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks, for example. In some embodiments, the position of the one or more semiconductor donor dies relative to the one or more carrier marks may be provided as a feedback signal for bonding. Alignment operations may be performed by one or more components of the system 301 shown in Figure 3 A - 3 J and described above, or other systems. For example, a controller or processors system (e.g., similar to or the same as computer system CS shown in Figure 11 and described below) included in the system 301 may perform one or more such operations.

[0112] At an operation 1050, a selected donor die (or one or more donor dies) is placed on a corresponding acceptor die (or one or more acceptor dies). The donor die may be placed on the acceptor die by any appropriate method, such as by movement of a die actuator, by radiation-mediated bonding, by stamping, by electrostatic attraction, etc. The donor die may experience alignment, including self-alignment, as the donor die is brought into contact with the acceptor die. The donor die may be adhered to the acceptor die as it contacts the acceptor die, such as by van der Waals forces. In some embodiments, an additional donor die may be placed on the same or different acceptor die.

[0113] At an operation 1060, it is determined if additional donor die remain for placement. If additional donor die (e.g., on the donor substrate or carrier) remain for placement, the flow continues to the operation 1030 where another donor die is selected. If no additional donor die remain for placement, flow continues to operation 1070, where the bonding of the plurality of dies is completed.

[0114] In an embodiment, a particular donor die and acceptor die are bonded at the time the donor die is placed on the acceptor die, e.g., through intermolecular bonding. In an embodiment, the donor die is bonded, such as through annealing or other bonding process, to the acceptor die after placement of the donor die on the acceptor die. In an embodiment, a bonding of a donor and acceptor die is completed before a next donor die is placed on an acceptor die. In an embodiment, bonding of a donor and acceptor die is completed after a plurality of donor dies are placed on respective acceptor dies, e.g., after all the donor dies on a donor substrate or carrier are placed. In an embodiment, a donor dieplaced on a acceptor die is annealed to form or enhance electrical connection. In an embodiment, the annealing of a particular donor die and acceptor die can be done prior to a next donor die is placed on a acceptor die. In an embodiment, annealing of a donor and acceptor die is completed after a plurality of donor dies are placed on respective acceptor dies, e.g., after all the donor dies on a donor substrate or carrier are placed. The donor die may be held against the acceptor die for a bonding or annealing time period. A donor die and acceptor die pair may be released from a substrate or other holding apparatus before annealing or after annealing has occurred.

[0115] Figure 11 is a diagram of an example computer system CS that may be used to implement one or more of the operations described herein. Computer system may be, include, or be included in the controller of the system 301 shown in Figure 3A - 3J and described above, or other systems described herein. For example, computer system CS may form a processor system that controls or performs other functions associated with one or more components of the system 301. Computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (or multiple processors) coupled with bus BS for processing information. Computer system CS also includes a main memory MM, such as a random-access memory (RAM) or other dynamic storage device, coupled to bus BS for storing information and instructions to be executed by processor PRO. Main memory MM also may be used for storing temporary variables or other intermediate information during execution of instructions by processor PRO. Computer system CS further includes a read only memory (ROM) ROM or other static storage device coupled to bus BS for storing static information and instructions for processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to bus BS for storing information and instructions.

[0116] Computer system CS may be coupled via bus BS to a display DS, such as a cathode ray tube (CRT) or flat panel or touch panel display for displaying information to a computer user. An input device ID, including alphanumeric and other keys, is coupled to bus BS for communicating information and command selections to processor PRO. Another type of user input device is cursor control CC, such as a mouse, a trackball, or cursor direction keys for communicating direction information and command selections to processor PRO and for controlling cursor movement on display DS. This input device typically has two degrees of freedom in two axes, a first axis (e.g., x) and a second axis (e.g., y), that allows the device to specify positions in a plane. A touch panel (screen) display may also be used as an input device.

[0117] In some embodiments, portions of one or more methods described herein may be performed by computer system CS in response to processor PRO executing one or more sequences of one or more instructions contained in main memory MM. Such instructions may be read into main memory MM from another computer-readable medium, such as storage device SD. Execution of the sequences of instructions included in main memory MM causes processor PRO to perform one or more process steps (operations) described herein. One or more processors in a multi-processing arrangement mayalso be employed to execute the sequences of instructions contained in main memory MM. In some embodiments, hard-wired circuitry may be used in place of or in combination with software instructions. Thus, the description herein is not limited to any specific combination of hardware circuitry and software.

[0118] The term “computer-readable medium” and / or “machine readable medium” as used herein refers to any medium that participates in providing instructions to processor PRO for execution. Such a medium may take many forms, including but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as storage device SD. Volatile media include dynamic memory, such as main memory MM. Transmission media include coaxial cables, copper wire and fiber optics, including the wires that comprise bus BS. Transmission media can also take the form of acoustic or radiation waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer- readable media can be non-transitory, for example, a floppy disk, a flexible disk, hard disk, magnetic tape, any other magnetic medium, a CD-ROM, DVD, any other optical medium, punch cards, paper tape, any other physical medium with patterns of holes, a RAM, a PROM, and EPROM, a FLASH- EPROM, any other memory chip or cartridge. Non-transitory computer readable media can have instructions recorded thereon. The instructions, when executed by a computer, can implement any of the operations described herein. Transitory computer-readable media can include a carrier wave or other propagating electromagnetic signal, for example.

[0119] Various forms of computer readable media may be involved in carrying one or more sequences of one or more instructions to processor PRO for execution. For example, the instructions may initially be borne on a magnetic disk of a remote computer. The remote computer can load the instructions into its dynamic memory and send the instructions over a telephone line using a modem. A modem local to computer system CS can receive the data on the telephone line and use an infrared transmitter to convert the data to an infrared signal. An infrared detector coupled to bus BS can receive the data carried in the infrared signal and place the data on bus BS. Bus BS carries the data to main memory MM, from which processor PRO retrieves and executes the instructions. The instructions received by main memory MM may optionally be stored on storage device SD either before or after execution by processor PRO.

[0120] Computer system CS may also include a communication interface CI coupled to bus BS. Communication interface CI provides a two-way data communication coupling to a network link NDL that is connected to a local network LAN. For example, communication interface CI may be an integrated services digital network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, communication interface CI may be a local area network (LAN) card to provide a data communication connection to a compatible LAN. Wireless links may also be implemented. In any such implementation, communication interface CI sends and receives electrical, electromagnetic, or optical signals thatcarry digital data streams representing various types of information.

[0121] Network link NDL typically provides data communication through one or more networks to other data devices. For example, network link NDL may provide a connection through local network LAN to a host computer HC. This can include data communication services provided through the worldwide packet data communication network, now commonly referred to as the “Internet” INT. Local network LAN (Internet) may use electrical, electromagnetic, or optical signals that carry digital data streams. The signals through the various networks and the signals on network data link NDL and through communication interface CI, which carry the digital data to and from computer system CS, are exemplary forms of carrier waves transporting the information.

[0122] Computer system CS can send messages and receive data, including program code, through the network(s), network data link NDL, and communication interface CL In the Internet example, host computer HC might transmit a requested code for an application program through Internet INT, network data link NDL, local network LAN, and communication interface CL One such downloaded application may provide all or part of a method described herein, for example. The received code may be executed by processor PRO as it is received, and / or stored in storage device SD, or other nonvolatile storage for later execution. In this manner, computer system CS may obtain application code in the form of a carrier wave.

[0123] Further embodiments of the invention are disclosed in the list of numbered clauses below:1. A method, comprising: determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.2. The method of clause 1, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed separately from, and in advance of, bonding.3. The method of clause 1, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.4. The method of clause 1 or clause 2, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.5. The method of any of the previous clauses, wherein each of the one or more semiconductor donor dies comprises one or more die marks usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks.6. The method of clause 5, wherein the one or more die marks comprise one or more features of a die, and the one or more carrier marks comprise one or more features of the carrier used todetermine the position of the one or more semiconductor donor dies relative to the one or more carrier marks.7. The method of clause 5, wherein the one or more die marks and the one or more carrier marks comprise a same type of mark.8. The method of clause 5, wherein the one or more die marks and the one or more carrier marks comprise different types of marks.9. The method of any of clauses 5-8, wherein the one or more die marks and / or one or more carrier marks comprise one or more periodic marks.10. The method of any of clauses 5-9, wherein the one or more die marks and / or one or more carrier marks comprise one or more alignment marks and / or one or more image based overlay marks.11. The method of clause 10, wherein the one or more die marks and / or one or more carrier marks have an area of 4000 square microns or less.12. The method of any of clauses 5-11, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by an optical sensor.13. The method of clause 12, wherein the optical sensor comprises a camera.14. The method of clause 12 or clause 13, wherein the optical sensor has a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks.15. The method of clause 14, wherein the one or more carrier marks are sufficiently dense to ensure that at least one of the one or more carrier marks is within the field of view.16. The method of clause 15, wherein sufficient density comprises one carrier mark within 100 microns of another carrier mark on the carrier.17. The method of any of clauses 14-16, wherein the field of view is less than or equal to 30,000 square microns.18. The method of any of clauses 1-5, wherein the one or more carrier marks comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by a capacitive sensor.19. The method of any of clauses 1-18, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining die to carrier overlay values.20. The method of clause 19, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining 1000 or more die to carrier overlay values.21. The method of any of the previous clauses, wherein the carrier further comprises one or more carrier alignment marks, wherein positions of the one or more carrier alignment marks relative to the one or more carrier marks are known, and further comprising aligning the carrier to the one or more acceptor locations for bonding based on the one or more carrier alignment marks and the position ofthe one or more semiconductor donor dies relative to the one or more carrier marks.22. The method of any of the previous clauses, wherein a structure comprises the one or more acceptor locations, wherein the structure comprises one or more alignment marks, and further comprising aligning the carrier to the structure for bonding based on the one or more alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks.23. The method of any of the previous clauses, further comprising providing the position of the one or more semiconductor donor dies relative to the one or more carrier marks as a feedback signal for bonding.24. The method of any of the previous clauses, wherein the one or more acceptor locations are located on a semiconductor wafer, and / or the one or more acceptor locations comprise one or more corresponding acceptor semiconductor dies.25. A method, comprising: determining a position of a carrier of a plurality of donor dies using a capacitive sensing arrangement comprising a capacitive pattern and a capacitive sensor, wherein the carrier comprises the capacitive pattern or the capacitive sensor; and aligning the donor dies to one or more corresponding acceptor locations for bonding based on the determined position.26. A method, comprising: determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies, the position of the one or more semiconductor donor dies relative to the one or more carrier marks configured to be used for aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding.27. The method of clause 26, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed separately from, and in advance of, bonding.28. The method of clause 26, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.29. The method of clause 26 or clause 27, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.30. The method of any of the previous clauses, wherein each of the one or more semiconductor donor dies comprises one or more die marks usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks.31. The method of clause 30, wherein the one or more die marks comprise one or more features of a die, and the one or more carrier marks comprise one or more features of the carrier used to determine the position of the one or more semiconductor donor dies relative to the one or more carriermarks.32. The method of clause 30, wherein the one or more die marks and the one or more carrier marks comprise a same type of mark.33. The method of clause 30, wherein the one or more die marks and the one or more carrier marks comprise different types of marks.34. The method of any of clauses 30-33, wherein the one or more die marks and / or one or more carrier marks comprise one or more periodic marks.35. The method of any of clauses 30-34, wherein the one or more die marks and / or one or more carrier marks comprise one or more alignment marks and / or one or more image based overlay marks.36. The method of clause 35, wherein the one or more die marks and / or one or more carrier marks have an area of 4000 square microns or less.37. The method of any of clauses 30-36, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by an optical sensor.38. The method of clause 37, wherein the optical sensor comprises a camera.39. The method of clause 37 or clause 38, wherein the optical sensor has a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks.40. The method of clause 39, wherein the one or more carrier marks are sufficiently dense to ensure that at least one of the one or more carrier marks is within the field of view.41. The method of clause 40, wherein sufficient density comprises one carrier mark within 100 microns of another carrier mark on the carrier.42. The method of any of clauses 39-41, wherein the field of view is less than or equal to 30,000 square microns.43. The method of any of clauses 26-30, wherein the one or more carrier marks comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by a capacitive sensor.44. The method of any of clauses 26-43, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining die to carrier overlay values.45. The method of clause 44, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining 1000 or more die to carrier overlay values.46. A method, comprising: aligning one or more semiconductor donor dies on a donor carrier to one or more corresponding acceptor locations, referenced to one or more carrier marks on the donor carrier, for bonding.47. The method of clause 46, wherein the carrier further comprises one or more carrier alignment marks, wherein positions of the one or more carrier alignment marks relative to the one or morecarrier marks are known, and further comprising aligning the carrier to the one or more corresponding acceptor locations for bonding based on the one or more carrier alignment marks and a position of the one or more semiconductor donor dies relative to the one or more carrier marks.48. The method of clause 46 or clause 47, wherein a structure comprises the one or more acceptor locations, wherein the structure comprises one or more alignment marks, and further comprising aligning the carrier to the structure for bonding based on the one or more alignment marks and a position of the one or more semiconductor donor dies relative to the one or more carrier marks.49. The method of any of the previous clauses, further comprising providing a position of the one or more semiconductor donor dies relative to the one or more carrier marks as a feedback signal for bonding.50. The method of any of the previous clauses, wherein the one or more acceptor locations are located on a semiconductor wafer, and / or the one or more acceptor locations comprise one or more corresponding acceptor semiconductor dies.51. A system, comprising: a metrology tool configured to determine a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and a processor system configured to cause alignment of the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.52. The system of clause 51, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed separately from, and in advance of, bonding.53. The system of clause 51, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.54. The system of clause 51 or clause 52, wherein the metrology tool and the processor system are configured such that the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.55. The system of any of the previous clauses, wherein each of the one or more semiconductor donor dies comprises one or more die marks usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks.56. The system of clause 55, wherein the one or more die marks comprise one or more features of a die, and the one or more carrier marks comprise one or more features of the carrier used to determine the position of the one or more semiconductor donor dies relative to the one or more carrier marks.57. The system of clause 55, wherein the one or more die marks and the one or more carriermarks comprise a same type of mark.58. The system of clause 55, wherein the one or more die marks and the one or more carrier marks comprise different types of marks.59. The system of any of clauses 55-58, wherein the one or more die marks and / or one or more carrier marks comprise one or more periodic marks.60. The system of any of clauses 55-59, wherein the one or more die marks and / or one or more carrier marks comprise one or more alignment marks and / or one or more image based overlay marks.61. The system of clause 60, wherein the one or more die marks and / or one or more carrier marks have an area of 4000 square microns or less.62. The system of any of clauses 55-61, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by an optical sensor of the metrology tool.63. The system of clause 62, wherein the optical sensor comprises a camera.64. The system of clause 62 or clause 63, wherein the optical sensor has a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks.65. The system of clause 64, wherein the one or more carrier marks are sufficiently dense to ensure that at least one of the one or more carrier marks is within the field of view.66. The system of clause 65, wherein sufficient density comprises one carrier mark within 100 microns of another carrier mark on the carrier.67. The system of any of clauses 64-66, wherein the field of view is less than or equal to 30,000 square microns.68. The system of any of clauses 51-55, wherein the one or more carrier marks comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by a capacitive sensor of the metrology tool.69. The system of any of clauses 51-68, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining die to carrier overlay values.70. The system of clause 69, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining 1000 or more die to carrier overlay values.71. The system of any of the previous clauses, further comprising the carrier, wherein the carrier further comprises one or more carrier alignment marks, wherein positions of the one or more carrier alignment marks relative to the one or more carrier marks are known, and further comprising aligning the carrier to the one or more acceptor locations for bonding based on the one or more carrier alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks.72. The system of any of the previous clauses, further comprising a structure comprising the one or more acceptor locations, wherein the structure comprises one or more alignment marks, and further comprising aligning the carrier to the structure for bonding based on the one or more alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks.73. The system of any of the previous clauses, wherein the processor system is further configured to provide the position of the one or more semiconductor donor dies relative to the one or more carrier marks as a feedback signal for bonding.74. The system of any of the previous clauses, wherein the one or more acceptor locations are located on a semiconductor wafer, and / or the one or more acceptor locations comprise one or more corresponding acceptor semiconductor dies.75. A system, comprising: a metrology tool configured to determine a position of a carrier of a plurality of donor dies using a capacitive sensing arrangement comprising a capacitive pattern and a capacitive sensor, wherein the carrier comprises the capacitive pattern or the capacitive sensor; and a processor system configured to cause alignment of the donor dies to one or more corresponding acceptor locations for bonding based on the determined position.76. A system, comprising: a metrology tool configured to determine a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies, the position of the one or more semiconductor donor dies relative to the one or more carrier marks configured to be used for aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding.77. The system of clause 76, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed separately from, and in advance of, bonding.78. The system of clause 76, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.79. The system of clause 76 or clause 77, wherein the metrology tool is configured such that the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.80. The system of any of the previous clauses, wherein each of the one or more semiconductor donor dies comprises one or more die marks usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks.81. The system of clause 80, wherein the one or more die marks comprise one or more features of a die, and the one or more carrier marks comprise one or more features of the carrier used todetermine the position of the one or more semiconductor donor dies relative to the one or more carrier marks.82. The system of clause 80, wherein the one or more die marks and the one or more carrier marks comprise a same type of mark.83. The system of clause 80, wherein the one or more die marks and the one or more carrier marks comprise different types of marks.84. The system of any of clauses 80-83, wherein the one or more die marks and / or one or more carrier marks comprise one or more periodic marks.85. The system of any of clauses 80-84, wherein the one or more die marks and / or one or more carrier marks comprise one or more alignment marks and / or one or more image based overlay marks.86. The system of clause 85, wherein the one or more die marks and / or one or more carrier marks have an area of 4000 square microns or less.87. The system of any of clauses 80-86, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by an optical sensor of the metrology tool.88. The system of clause 87, wherein the optical sensor comprises a camera.89. The system of clause 87 or clause 88, wherein the optical sensor has a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks.90. The system of clause 89, wherein the one or more carrier marks are sufficiently dense to ensure that at least one of the one or more carrier marks is within the field of view.91. The system of clause 90, wherein sufficient density comprises one carrier mark within 100 microns of another carrier mark on the carrier.92. The system of any of clauses 89-91, wherein the field of view is less than or equal to 30,000 square microns.93. The system of any of clauses 76-80, wherein the one or more carrier marks comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by a capacitive sensor of the metrology tool.94. The system of any of clauses 76-83, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining die to carrier overlay values.95. The system of clause 94, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining 1000 or more die to carrier overlay values.96. A system, comprising: a processor system configured to cause alignment of one or more semiconductor donor dies on a donor carrier to one or more corresponding acceptor locations, referenced to one or more carrier marks on the donor carrier, for bonding.97. The system of clause 96, further comprising the carrier, wherein the carrier further comprises one or more carrier alignment marks, wherein positions of the one or more carrier alignment marks relative to the one or more carrier marks are known, and further comprising aligning the carrier to the one or more corresponding acceptor locations for bonding based on the one or more carrier alignment marks and a position of the one or more semiconductor donor dies relative to the one or more carrier marks.98. The system of clause 96 or clause 97, further comprising a structure comprising the one or more acceptor locations, wherein the structure comprises one or more alignment marks, and further comprising aligning the carrier to the structure for bonding based on the one or more alignment marks and a position of the one or more semiconductor donor dies relative to the one or more carrier marks.99. The system of any of the previous clauses, wherein the processor system is configured to provide a position of the one or more semiconductor donor dies relative to the one or more carrier marks as a feedback signal for bonding.100. The system of any of the previous clauses, wherein the one or more acceptor locations are located on a semiconductor wafer, and / or the one or more acceptor locations comprise one or more corresponding acceptor semiconductor dies.

[0124] While the concepts disclosed herein may be used for manufacturing with a substrate such as a silicon wafer, it shall be understood that the disclosed concepts may be used with any type of manufacturing system (e.g., those used for manufacturing on substrates other than silicon wafers).

[0125] In addition, the combination and sub -combinations of disclosed elements may comprise separate embodiments. For example, one or more of the operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0126] The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made as described without departing from the scope of the claims set out below.

Claims

CLAIMS1. A method, comprising: determining a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and aligning the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.

2. The method of claim 1, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.

3. The method of claim 1, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.

4. The method of claim 1, wherein each of the one or more semiconductor donor dies comprises one or more die marks usable in determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks.

5. The method of claim 4, wherein the one or more die marks comprise one or more features of a die, and the one or more carrier marks comprise one or more features of the carrier used to determine the position of the one or more semiconductor donor dies relative to the one or more carrier marks.

6. The method of claim 5, wherein the one or more die marks and the one or more carrier marks comprise a same type of mark.

7. The method of claim 4, wherein the one or more die marks and / or one or more carrier marks have an area of 4000 square microns or less.

8. The method of claim 1, wherein the one or more carrier marks comprise a capacitive pattern, and the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by a capacitive sensor.

9. The method of claim 1, wherein determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks comprises determining die to carrier overlayvalues.

10. A system, comprising: a metrology tool configured to determine a position of one or more semiconductor donor dies relative to one or more carrier marks on a carrier of the one or more semiconductor donor dies; and a processor system configured to cause alignment of the one or more semiconductor donor dies to one or more corresponding acceptor locations, referenced to the one or more carrier marks, for bonding, based on the position.

11. The system of claim 10, wherein the metrology tool is configured such that determining the position of the one or more semiconductor donor dies relative to the one or more carrier marks on the carrier is performed during bonding, when the one or more semiconductor donor dies approach the one or more corresponding acceptor locations.

12. The system of claim 10, wherein the metrology tool and the processor system are configured such that the position of the one or more semiconductor donor dies relative to the one or more carrier marks is provided as a feedforward signal to a donor die and / or acceptor substrate positioning system.

13. The system of claim 10, wherein the position of the one or more semiconductor donor dies relative to the one or more carrier marks is determined by an optical sensor of the metrology tool.

14. The system of claim 13, wherein the optical sensor has a field of view large enough to include one or more of the one or more die marks and one or more of the one or more carrier marks.

15. The system of claim 10, further comprising the carrier, wherein the carrier further comprises one or more carrier alignment marks, wherein positions of the one or more carrier alignment marks relative to the one or more carrier marks are known, and further comprising aligning the carrier to the one or more acceptor locations for bonding based on the one or more carrier alignment marks and the position of the one or more semiconductor donor dies relative to the one or more carrier marks.

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