Substrate processing device and control method

Abstract

This substrate processing device comprises a substrate support part, a first supply pipe, a first discharge pipe, a second supply pipe, a second discharge pipe, a first valve, a second valve, and a control unit. A first flow path and a second flow path through which a refrigerant circulates are formed inside the substrate support part. The first supply pipe and the first discharge pipe are connected to the first flow path, and the first valve is provided in the first supply pipe or the first discharge pipe. The second supply pipe and the second discharge pipe are connected to the second flow path, and the second valve is provided in the second supply pipe or the second discharge pipe. The first flow path and the second flow path are provided adjacent to each other along the mounting surface of the substrate support part. When the temperature of the substrate is to be maintained at a first temperature in a step (a), the control unit performs control to open the first valve and close the second valve. When the temperature of the substrate is to be lowered from the first temperature to a second temperature in a step (b), the control unit performs control to open the first valve and the second valve.

Description

Substrate processing apparatus and control method

[0001] Various aspects and embodiments of the present disclosure relate to substrate processing apparatus and control methods.

[0002] Patent Document 1 listed below discloses that "a plasma processing apparatus includes a processing vessel defining a plasma processing space, and a mounting table disposed within the processing vessel on which a substrate to be processed is placed. The plasma processing apparatus also includes a gas supply mechanism that introduces a processing gas used for a plasma reaction into the plasma processing space, and a plasma generation mechanism that supplies electromagnetic energy to convert the processing gas introduced into the plasma processing space into plasma. The plasma processing apparatus also includes a plurality of coolant flow paths formed within the mounting table, and a temperature adjustment unit that controls the temperature of the coolant circulating through the plurality of coolant flow paths. The plasma processing apparatus also includes check valves disposed in some of the plurality of coolant flow paths, and a reversing mechanism that reverses the flow direction of the coolant circulating through the plurality of coolant flow paths."

[0003] JP 2014-11382 A

[0004] The present disclosure provides a substrate processing apparatus and a control method that can quickly reduce the temperature of a substrate.

[0005] One aspect of the present disclosure provides a substrate processing apparatus including a chamber, a substrate support, a first supply pipe, a first discharge pipe, a second supply pipe, a second discharge pipe, a first valve, a second valve, and a control unit. The substrate support is disposed within the chamber and supports a substrate, and has a first flow path and a second flow path formed therein through which a coolant circulates. The first supply pipe is connected to the first flow path and supplies the coolant to the first flow path. The first discharge pipe is connected to the first flow path and discharges the coolant that has flowed through the first flow path. The second supply pipe is connected to the second flow path and supplies the coolant to the second flow path. The second discharge pipe is connected to the second flow path and discharges the coolant that has flowed through the second flow path. The first valve is provided on the first supply pipe or the first discharge pipe. The second valve is provided on the second supply pipe or the second discharge pipe. The first flow path and the second flow path are provided adjacent to each other along a mounting surface of a substrate support part on which a substrate is placed. The control part is configured to perform steps (a) and (b). In step (a), the first valve and the second valve are controlled to open and close the second valve when the temperature of the substrate is to be maintained at a first temperature. In step (b), the first valve and the second valve are controlled to open when the temperature of the substrate is to be changed from the first temperature to a second temperature lower than the first temperature.

[0006] According to various aspects and embodiments of the present disclosure, the temperature of the substrate can be reduced quickly.

[0007] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. FIG. 2 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 3 is a cross-sectional view illustrating an example of the structure of a base according to this embodiment. FIG. 4 is a cross-sectional view taken along the line A-A of the base illustrated in FIG. 3. FIG. 5 is a diagram illustrating an example of control of each valve. FIG. 6 is a diagram illustrating an example of control of each valve. FIG. 7 is a diagram illustrating an example of control of each valve. FIG. 8 is a cross-sectional view illustrating an example of the structure of a base according to a reference example. FIG. 9 is a diagram illustrating an example of the relationship between control of each valve and changes in the surface temperature of an electrostatic chuck according to a reference example. FIG. 10 is a diagram illustrating an example of the relationship between control of each valve and changes in the surface temperature of an electrostatic chuck according to this embodiment. FIG. 11 is a diagram illustrating an example of the distribution of the surface temperature of an electrostatic chuck. FIG. 12 is a flowchart illustrating an example of a control method. FIG. 13 is a diagram illustrating another example of the position of the second valve. FIG. 14 is a diagram illustrating another example of the positions of the first valve and the second valve. FIG. 15 is a diagram illustrating another example of the cross sections of the first flow path and the second flow path. FIG. 16 is a diagram illustrating another example of the cross sections of the first flow path and the second flow path. FIG. 17 is a diagram showing another example of the cross section of the first flow path and the second flow path.

[0008] Hereinafter, embodiments of the disclosed substrate processing apparatus and control method will be described in detail with reference to the drawings. However, the disclosed substrate processing apparatus and control method are not limited to the following embodiments.

[0009] Recently, processes are sometimes performed at low temperatures. In low-temperature processes, a base having a flow path through which a coolant flows and an electrostatic chuck placed thereon are controlled to low temperatures. In such processes, if the base and the electrostatic chuck have different linear expansion coefficients, the adhesion between the base and the electrostatic chuck may be reduced. For example, if the base is made of alumina and the electrostatic chuck is made of aluminum, the adhesion between the base and the electrostatic chuck may be reduced in a low-temperature environment.

[0010] Therefore, the electrostatic chuck is made of a material whose linear expansion coefficient is close to that of the base material (e.g., titanium, a composite material of an inorganic material and a metal, etc.). However, because such materials have lower thermal conductivity than aluminum, it is difficult to quickly reduce the temperature of the electrostatic chuck even when the technology of Patent Document 1 is used. Therefore, it is difficult to quickly reduce the temperature of the substrate.

[0011] Therefore, the present disclosure provides a technique that can quickly lower the temperature of a substrate.

[0012] [Configuration Example of a Plasma Processing System] FIG. 1 is a diagram illustrating a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0013] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0014] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0015] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0016] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0017] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0018] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. The central region 111a is an example of a mounting surface. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0019] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0020] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In this embodiment, the heat transfer fluid is a refrigerant. A chiller unit 50 is connected to the flow path 1110a via pipes 50a and 50b. The refrigerant, whose temperature is controlled by the chiller unit 50, is supplied into the flow path 1110a via pipe 50a. The refrigerant that has flowed through the flow path 1110a is returned to the chiller unit 50 via pipe 50b.

[0021] In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0022] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0023] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0024] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0025] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0026] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0027] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0028] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0029] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0030] [Structure of Base 1110] Figure 3 is a cross-sectional view showing an example of the structure of the base 1110 in this embodiment, and Figure 4 is a cross-sectional view taken along line A-A of the base 1110 shown in Figure 3. The flow path 1110a in the base 1110 includes a first flow path 1110a1 and a second flow path 1110a2. In this embodiment, the first flow path 1110a1 and the second flow path 1110a2 are formed integrally with the base 1110.

[0031] One end of first flow path 1110a1 is connected to pipe 50a via first supply pipe 51a, and the other end of first flow path 1110a1 is connected to pipe 50b via first discharge pipe 51b. First discharge pipe 51b is provided with a first valve 51c. Refrigerant supplied from pipe 50a is supplied into first flow path 1110a1 via first supply pipe 51a. Then, the refrigerant flowing through first flow path 1110a1 is discharged to pipe 50b via first discharge pipe 51b.

[0032] One end of second flow path 1110a2 is connected to first discharge pipe 51b via second supply pipe 52a. Second supply pipe 52a is connected to first discharge pipe 51b between first flow path 1110a1 and first valve 51c. The other end of second flow path 1110a2 is connected to pipe 50b via second discharge pipe 52b. Second discharge pipe 52b is provided with second valve 52c. The refrigerant supplied into second flow path 1110a2 via second supply pipe 52a flows through second flow path 1110a2 and is discharged to pipe 50b via second discharge pipe 52b.

[0033] A third pipe 53a is connected between the first supply pipe 51a and the first discharge pipe 51b. A third valve 53b is provided on the third pipe 53a. When the third valve 53b is open and the first valve 51c and the second valve 52c are closed, the refrigerant supplied from the pipe 50a is discharged to the pipe 50b via the third pipe 53a.

[0034] The first flow path 1110a1 and the second flow path 1110a2 are provided adjacent to each other along the upper surface of the electrostatic chuck 1111, as shown in Figures 3 and 4, for example. In this embodiment, the first flow path 1110a1 and the second flow path 1110a2 are alternately arranged in a direction along the radial direction R of the upper surface of the electrostatic chuck 1111, as shown in Figure 4, for example. In this embodiment, the first flow path 1110a1 and the second flow path 1110a2 are arranged in a spiral shape when viewed from a direction intersecting the upper surface of the electrostatic chuck 1111, as shown in Figure 4, for example. Note that the shapes of the first flow path 1110a1 and the second flow path 1110a2 are not limited to a spiral shape and may be other shapes such as a meandering shape or a zigzag shape.

[0035] 3, the distance ΔL1 between the upper surface of the electrostatic chuck 1111 and the upper end of the first flow path 1110a1 is the same as the distance ΔL1 between the upper surface of the electrostatic chuck 1111 and the upper end of the second flow path 1110a2. This allows the coolant flowing through the second flow path 1110a2 to quickly remove heat from the electrostatic chuck 1111 to the same extent as the coolant flowing through the first flow path 1110a1.

[0036] Furthermore, the first flow path 1110a1 and the second flow path 1110a2 have different cross-sectional shapes in the direction in which the refrigerant flows. In this embodiment, the cross-sectional shapes of the first flow path 1110a1 and the second flow path 1110a2 are rectangular. As shown in FIG. 3, for example, the cross-sectional shape of the second flow path 1110a2 is more elongated in the vertical direction than the cross-sectional shape of the first flow path 1110a1. The lower end of the second flow path 1110a2 is located ΔL2 below the lower end of the first flow path 1110a1.

[0037] Furthermore, the first flow path 1110a1 and the second flow path 1110a2 have different cross-sectional shapes in the direction in which the coolant flows, but the same cross-sectional area. This allows approximately the same amount of coolant to flow through the first flow path 1110a1 and the second flow path 1110a2. This allows the amount of heat absorbed from the electrostatic chuck 1111 by the coolant flowing through the first flow path 1110a1 to be approximately the same as the amount of heat absorbed from the electrostatic chuck 1111 by the coolant flowing through the second flow path 1110a2. This makes it possible to suppress variations in the temperature distribution from location to location on the top surface of the electrostatic chuck 1111.

[0038] 3, the distance ΔL3 between the upper ends of adjacent first flow paths 1110a1 is smaller than the distance ΔL4 between the upper ends of adjacent second flow paths 1110a2 in the direction along the top surface of the electrostatic chuck 1111. This makes it possible to suppress variations in the temperature distribution from location to location on the top surface of the electrostatic chuck 1111 when no refrigerant is flowing through the second flow paths 1110a2.

[0039] [Control of Each Valve] Figures 5 to 7 are diagrams showing an example of control of each valve. In Figures 5 to 7, open valves indicate valves that are controlled to an open state, and solid valves indicate valves that are controlled to a closed state. In Figures 5 to 7, the flow paths and pipes through which the refrigerant circulates are hatched.

[0040] When the surface temperature of the electrostatic chuck 1111 is maintained at a first temperature (e.g., 40°C), for example, as shown in FIG. 5 , the first valve 51c is opened, and the second valve 52c and the third valve 53b are closed. As a result, the coolant supplied through the pipe 50a is supplied into the first flow path 1110a1 via the first supply pipe 51a and circulates through the first flow path 1110a1. At this time, because the third valve 53b is closed, the coolant supplied through the pipe 50a does not circulate through the third pipe 53a. The coolant that has flowed through the first flow path 1110a1 is discharged to the pipe 50b through the first discharge pipe 51b. At this time, because the second valve 52c is closed, the coolant flowing through the first discharge pipe 51b does not circulate through the second supply pipe 52a.

[0041] 5, the coolant circulates through the first flow path 1110a1, and the heat of the electrostatic chuck 1111 heated by plasma or the like is removed by the coolant circulating through the first flow path 1110a1, thereby maintaining the surface temperature of the electrostatic chuck 1111 at the first temperature.

[0042] On the other hand, when the surface temperature of the electrostatic chuck 1111 is changed from the first temperature to a second temperature (e.g., 30° C.) lower than the first temperature, for example, as shown in FIG. 6 , the second valve 52c is opened, and the first valve 51c and the third valve 53b are closed. As a result, the coolant flowing through the first flow path 1110a1 flows into the second flow path 1110a2 via the first discharge pipe 51b and the second supply pipe 52a. The coolant flowing through the second flow path 1110a2 is discharged to the pipe 50b via the second discharge pipe 52b. As a result, the coolant circulates through the first flow path 1110a1 and the second flow path 1110a2.

[0043] 6, the coolant circulates, and heat from the electrostatic chuck 1111 heated by plasma or the like is removed not only by the coolant flowing through the first flow path 1110a1 but also by the coolant flowing through the second flow path 1110a2, thereby enabling the temperature of the electrostatic chuck 1111 to be quickly lowered from the first temperature to the second temperature.

[0044] 7, for example, the third valve 53b is opened and the first valve 51c and the second valve 52c are closed. As a result, the coolant supplied through the pipe 50a does not flow into the first supply pipe 51a but is discharged to the pipe 50b through the third pipe 53a. As a result, the coolant circulates through the third pipe 53a.

[0045] When the coolant circulates in the state shown in FIG. 7 , the coolant remaining in the first flow path 1110a1 and the second flow path 1110a2 does not circulate and is instead heated by heat input from the electrostatic chuck 1111. This allows the temperature of the electrostatic chuck 1111 to be quickly changed from the second temperature to the first temperature. While it is possible to change the temperature of the coolant using the chiller unit 50, a larger amount of coolant exists in the chiller unit 50, the piping 50a, and the piping 50b than in the first flow path 1110a1 and the second flow path 1110a2. Changing these temperatures requires a large amount of power and a long time. In contrast, by bypassing the coolant to the third piping 53a as shown in FIG. 7 , the power consumption associated with changing the temperature of the coolant using the chiller unit 50 can be avoided, and there is no need to wait for the time required for the chiller unit 50 to change the temperature of the coolant. This allows the surface temperature of the electrostatic chuck 1111 to be quickly raised from the second temperature to the first temperature.

[0046] [Changes in Surface Temperature of Electrostatic Chuck] First, changes in the surface temperature of the electrostatic chuck 1111 in the reference example will be described. FIG. 8 is a cross-sectional view showing an example of the structure of a base 1110′ in the reference example. A first flow path 1110a1′ and a second flow path 1110a2′ are formed inside the base 1110′ in the reference example. The first flow path 1110a1′ extends in a direction along the upper surface of the electrostatic chuck 1111 and is formed in a spiral shape. The second flow path 1110a2′ extends in a direction along the upper surface of the electrostatic chuck 1111 and is formed in a spiral shape below the first flow path 1110a1′.

[0047] A refrigerant is supplied to one end of the first flow path 1110a1' from the pipe 50a via a first valve 51c'. The refrigerant that has flowed through the first flow path 1110a1' is discharged from the other end of the first flow path 1110a1' to the pipe 50b. Furthermore, a refrigerant is supplied to one end of the second flow path 1110a2' from the pipe 50a via a second valve 52c'. The refrigerant that has flowed through the second flow path 1110a2' is discharged from the other end of the second flow path 1110a2' to the pipe 50b.

[0048] 9 is a diagram showing an example of the relationship between the control of each valve in the reference example and the change in the surface temperature of the electrostatic chuck 1111. In the state of each valve illustrated in FIG. 9, "ON" indicates an open state, and "OFF" indicates a closed state.

[0049] 9 , before timing t1, the first valve 51c′ is open, the second valve 52c′ is closed, a coolant flows through the first flow path 1110a1′, and the surface temperature of the electrostatic chuck 1111 is maintained at 40° C. If the second valve 52c′ is controlled to be open at timing t1, a coolant flows through the first flow path 1110a1′ and the second flow path 1110a2′ after timing t1.

[0050] However, in the base 1110 of the reference example, the distance between the upper surface of the electrostatic chuck 1111 and the second flow path 1110a2′ is longer than the distance between the upper surface of the electrostatic chuck 1111 and the first flow path 1110a1′. Therefore, it takes time for the refrigerant flowing through the second flow path 1110a2′ to reduce the surface temperature of the electrostatic chuck 1111. Therefore, in a short period of time, such as about 25 seconds, the surface temperature of the electrostatic chuck 1111 hardly changes, as shown in FIG. 9 .

[0051] 10 is a diagram showing an example of the relationship between the control of each valve in this embodiment and the change in the surface temperature of the electrostatic chuck 1111. In the state of each valve shown in FIG. 10, "ON" indicates an open state, and "OFF" indicates a closed state.

[0052] 10 , before timing t1, the first valve 51c is open, the second valve 52c and the third valve 53b are closed, the coolant circulates through the first flow path 1110a1, and the surface temperature of the electrostatic chuck 1111 is maintained at 40° C. If the second valve 52c is opened and the first valve 51c is controlled to be closed at timing t1, the coolant circulates through the first flow path 1110a1 and the second flow path 1110a2 after timing t1.

[0053] In the base 1110 of this embodiment, the distance ΔL1 between the upper surface of the electrostatic chuck 1111 and the upper end of the first flow path 1110a1 is the same as the distance ΔL1 between the upper surface of the electrostatic chuck 1111 and the upper end of the second flow path 1110a2. Therefore, the surface temperature of the electrostatic chuck 1111 is quickly reduced by the refrigerant circulating through the second flow path 1110a2. As a result, as shown in FIG. 10 , for example, at timing t2, which is Δt1 after timing t1, the surface temperature of the electrostatic chuck 1111 can be quickly reduced to 30° C. In the example of FIG. 10 , Δt1 is approximately 13 seconds.

[0054] Furthermore, at timing t2, when the surface temperature of the electrostatic chuck 1111 reaches 30° C., the third valve 53b is opened, and the first valve 51c and the second valve 52c are controlled to be closed. As a result, the circulation of the coolant in the first flow path 1110a1 and the second flow path 1110a2 is stopped after timing t2. The coolant remaining in the first flow path 1110a1 and the second flow path 1110a2 is heated by heat input from the electrostatic chuck 1111. As a result, at timing t3, which is Δt2 after timing t2, the surface temperature of the electrostatic chuck 1111 can be quickly raised to 40° C. In the example of FIG. 10 , Δt2 is approximately 8 seconds. In this way, the base 1110 of this embodiment allows the surface temperature of the electrostatic chuck 1111 to be quickly changed.

[0055] [Uniformity of Surface Temperature of Electrostatic Chuck] Fig. 11 is a diagram showing an example of the distribution of the surface temperature of the electrostatic chuck 1111. The graph at the bottom of Fig. 11 shows the temperature distribution on the surface of the electrostatic chuck 1111, with the horizontal axis representing the distance from the center to the edge along the top surface of the electrostatic chuck 1111.

[0056] When the surface temperature of the electrostatic chuck 1111 is reduced to 30° C., the coolant flows through both the first flow path 1110a1 and the second flow path 1110a2. Therefore, when the surface temperature of the electrostatic chuck 1111 is maintained at 30° C., the variation in the surface temperature of the electrostatic chuck 1111 from one location to another is equal to or less than ΔT1 in the range excluding the vicinity of the edge (the range from the center to 140 mm), as shown in FIG. 11 . In this embodiment, ΔT1 is, for example, 0.5° C.

[0057] On the other hand, when the surface temperature of the electrostatic chuck 1111 is increased to 40° C., the coolant flows through the first flow path 1110a1 but not through the second flow path 1110a2. Therefore, the coolant remaining in the second flow path 1110a2 is heated by heat input from the electrostatic chuck 1111. As a result, the surface of the electrostatic chuck 1111 above the second flow path 1110a2 becomes hotter than the surface of the electrostatic chuck 1111 above the first flow path 1110a1.

[0058] However, in this embodiment, in the direction along the top surface of the electrostatic chuck 1111, the distance ΔL3 between the upper ends of adjacent first flow paths 1110a1 is smaller than the distance ΔL4 between the upper ends of adjacent second flow paths 1110a2. This makes it possible to suppress the temperature rise of the electrostatic chuck 1111 caused by the temperature rise of the coolant in the second flow paths 1110a2, compared to when the distances ΔL3 and ΔL4 are the same. That is, the narrower the second flow paths 1110a2, the narrower the width of the region with low heat removal capacity (the region between the first flow paths 1110a1) when no coolant flows through the second flow paths 1110a2. Therefore, the narrower the second flow paths 1110a2, the more effective it is at suppressing the variation in the surface temperature of the electrostatic chuck 1111 from one location to another when no coolant flows through the second flow paths 1110a2. Furthermore, even if the second flow path 1110a2 is narrowed, as long as the cross-sectional area is approximately the same as that of the first flow path 1110a1, the variation in the surface temperature of the electrostatic chuck 1111 from one location to another can be suppressed when a coolant is flowing through the second flow path 1110a2. Therefore, as shown in FIG. 11 , for example, the variation in the surface temperature of the electrostatic chuck 1111 from one location to another can be suppressed to ΔT2 or less in a range excluding the vicinity of the edge (a range from the center to 140 mm). In this embodiment, ΔT2 is, for example, 1.5°C.

[0059] [Control Method] Fig. 12 is a flowchart showing an example of a control method. The process illustrated in Fig. 12 is realized by the control unit 2 controlling each part of the plasma processing apparatus 1. Before the process of Fig. 12 starts, a substrate W is loaded into the plasma processing chamber 10 and placed on the substrate support part 11.

[0060] First, it is determined whether or not the temperature of the substrate W is to be set to a first temperature (step S10). The first temperature is, for example, 40° C. If the temperature of the substrate W is to be set to the first temperature (step S10: Yes), the first valve 51 c and the second valve 52 c are closed, and the third valve 53 b is opened (step S11).

[0061] Then, it is determined whether the temperature of the substrate W has reached the first temperature (step S12). The control unit 2 determines whether the temperature of the substrate W has reached the first temperature based on, for example, the temperature of the substrate W measured by a temperature sensor (not shown) provided in the electrostatic chuck 1111. If the temperature of the substrate W has not reached the first temperature (step S12: No), the process shown in step S12 is executed again.

[0062] On the other hand, if the temperature of the substrate W reaches the first temperature (step S12: Yes), the first valve 51c is opened, and the second valve 52c and the third valve 53b are closed (step S13). Step S13 is an example of the process (a). Then, while the substrate W is maintained at the first temperature, processing of the substrate W is performed (step S14).

[0063] Next, it is determined whether or not to terminate the processing of the substrate W (Step S15). If the processing of the substrate W is to be continued (Step S15: No), the processing shown in Step S10 is executed again.

[0064] If the temperature of the substrate W is not set to the first temperature (step S10: No), it is determined whether or not to set the temperature of the substrate W to a second temperature (step S16). The second temperature is, for example, 30° C. If the temperature of the substrate W is not set to the second temperature (step S16: No), the process shown in step S15 is executed.

[0065] When the temperature of the substrate W is set to the second temperature (step S16: Yes), the first valve 51c and the third valve 53b are closed, and the second valve 52c is opened (step S17). Step S17 is an example of the process (b).

[0066] Then, it is determined whether or not the temperature of the substrate W has reached the second temperature (step S18). If the temperature of the substrate W has not reached the second temperature (step S18: No), the process shown in step S18 is executed again.

[0067] On the other hand, if the temperature of the substrate W reaches the second temperature (step S18: Yes), the substrate W is processed while being maintained at the second temperature (step S19). Then, the processing shown in step S15 is performed.

[0068] If the process of step S14 is executed after the process of step S19, the processes of steps S11 to S13 are executed. The process of step S11 after the process of step S14 is executed is an example of step (c).

[0069] The embodiment has been described above. As described above, the substrate processing apparatus (plasma processing apparatus 1) of this embodiment includes a chamber (plasma processing chamber 10), a substrate support (substrate support 11), a first supply pipe (first supply pipe 51a), a first exhaust pipe (first exhaust pipe 51b), a second supply pipe (second supply pipe 52a), a second exhaust pipe (second exhaust pipe 52b), a first valve (first valve 51c), a second valve (second valve 52c), and a control unit (control unit 2). The substrate support is disposed within the chamber and supports a substrate (substrate W), and has a first flow path (first flow path 1110a1) and a second flow path (second flow path 1110a2) formed therein through which a coolant circulates. The first supply pipe is connected to the first flow path and supplies a coolant to the first flow path. The first exhaust pipe is connected to the first flow path and exhausts the coolant that has flowed through the first flow path. The second supply pipe is connected to the second flow path and supplies the coolant to the second flow path. The second exhaust pipe is connected to the second flow path and exhausts the coolant that has flowed through the second flow path. The first valve is provided on the first supply pipe or the first exhaust pipe. The second valve is provided on the second supply pipe or the second exhaust pipe. The first flow path and the second flow path are provided adjacent to each other along the mounting surface (central region 111a) of the substrate support part on which the substrate is placed. The control unit is configured to perform steps (a) and (b). In step (a), when the temperature of the substrate is to be maintained at the first temperature, the first valve and the second valve are controlled to open the first valve and close the second valve. In step (b), when the temperature of the substrate W is changed from a first temperature to a second temperature lower than the first temperature, the first valve and the second valve are controlled to open, thereby enabling the temperature of the substrate W to be rapidly lowered.

[0070] In the above-described embodiment, the first valve is provided in the first exhaust pipe, the second supply pipe is connected to the first exhaust pipe between the first flow path and the first valve, and the second valve is provided in the second exhaust pipe, thereby enabling the temperature of the substrate W to be rapidly reduced.

[0071] In the above embodiment, the distance (ΔL1) between the mounting surface and the upper end of the first flow path is the same as the distance (ΔL1) between the mounting surface and the upper end of the second flow path, so that the coolant flowing through the second flow path 1110a2 can quickly remove heat from the electrostatic chuck 1111 to the same extent as the coolant flowing through the first flow path 1110a1.

[0072] In the above-described embodiment, the first flow paths and the second flow paths are alternately arranged along the radial direction of the mounting surface. In the above-described embodiment, the first flow paths and the second flow paths are arranged in a spiral shape when viewed from a direction intersecting the mounting surface. This makes it possible to suppress variations in the temperature distribution from location to location on the upper surface of the electrostatic chuck 1111.

[0073] In the above embodiment, the distance (ΔL3) between the uppermost ends of adjacent first flow paths in the direction along the mounting surface is smaller than the distance (ΔL4) between the uppermost ends of adjacent second flow paths, thereby suppressing variations in the temperature distribution from location to location on the top surface of the electrostatic chuck 1111 when no refrigerant is flowing through the second flow paths 1110a2.

[0074] In the above embodiment, the first flow path and the second flow path have different cross-sectional shapes in the direction in which the coolant flows, but have the same cross-sectional area in the direction in which the coolant flows, which allows approximately the same amount of coolant to flow through the first flow path 1110a1 and the second flow path 1110a2, thereby suppressing variations in the temperature distribution from location to location on the top surface of the electrostatic chuck 1111.

[0075] In the above-described embodiment, the lower end of the second flow path is located lower than the lower end of the first flow path, which allows the first and second flow paths to have the same cross-sectional area but different cross-sectional shapes.

[0076] In the above-described embodiment, the substrate support includes a base (base 1110), and the first flow path and the second flow path are integrally formed within the base, which makes it easy to form the first flow path and the second flow path.

[0077] The embodiment described above further includes a third pipe (third pipe 53 a) connected between the first pipe and the first exhaust pipe, and a third valve (third valve 53 b) provided in the third pipe. The control unit is configured to further execute step (c) of controlling the third valve to open the third valve when the temperature of the substrate is changed from the second temperature to the first temperature. This allows the temperature of the electrostatic chuck 1111 to be quickly increased from the second temperature to the first temperature.

[0078] Furthermore, a control method of this embodiment is a control method for a substrate processing apparatus, and includes steps (a) and (b). The substrate processing apparatus includes a chamber, a substrate support, a first supply pipe, a first discharge pipe, a second supply pipe, a second discharge pipe, a first valve, a second valve, and a control unit. The substrate support is disposed in the chamber and supports a substrate, and has a first flow path and a second flow path formed therein through which a coolant circulates. The first supply pipe is connected to the first flow path and supplies the coolant to the first flow path. The first discharge pipe is connected to the first flow path and discharges the coolant that has flowed through the first flow path. The second supply pipe is connected to the second flow path and supplies the coolant to the second flow path. The second discharge pipe is connected to the second flow path and discharges the coolant that has flowed through the second flow path. The first valve is provided on the first supply pipe or the first discharge pipe. The second valve is provided in the second supply pipe or the second discharge pipe. The first flow path and the second flow path are provided adjacent to each other along the mounting surface of the substrate support part on which the substrate is placed. The control part is configured to perform steps (a) and (b). In step (a), when the temperature of the substrate is to be maintained at a first temperature, the first valve and the second valve are controlled to open and close, respectively. In step (b), when the temperature of the substrate is to be changed from the first temperature to a second temperature lower than the first temperature, the first valve and the second valve are controlled to open, respectively. This allows the temperature of the substrate W to be rapidly reduced.

[0079] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0080] For example, in the above-described embodiment, the second valve 52c is provided in the second discharge pipe 52b, but the disclosed technology is not limited to this. As another example, the second valve 52c may be provided in the second supply pipe 52a, as shown in FIG. 13 .

[0081] In the above embodiment, the refrigerant that has flowed through the first flow path 1110a1 is supplied to the second flow path 1110a2, but the disclosed technology is not limited to this. As another example, as shown in FIG. 14 , the refrigerant may be supplied to the first flow path 1110a1 and the second flow path 1110a2 in parallel.

[0082] Fig. 14 is a diagram showing another example of the valve positions. In the example of Fig. 14, one end of the first flow path 1110a1 is connected to a pipe 50a via a first supply pipe 51a, and the other end of the first flow path 1110a1 is connected to a pipe 50b via a first exhaust pipe 51b. A first valve 51c is provided on the first supply pipe 51a. One end of the second flow path 1110a2 is connected to a pipe 50a via a second supply pipe 52a, and the other end of the second flow path 1110a2 is connected to a pipe 50b via a second exhaust pipe 52b. A second valve 52c is provided on the second supply pipe 52a.

[0083] 14 , a coolant whose temperature has been adjusted by the chiller unit 50 is supplied to the second flow path 1110a2. Therefore, a low-temperature coolant flows through the second flow path 1110a2 as well, similar to the first flow path 1110a1. This allows the temperature of the substrate W to be lowered more quickly.

[0084] Furthermore, in the above-described embodiment, the cross-sectional shapes of the first flow path 1110a1 and the second flow path 1110a2 in the coolant flow direction are rectangular, but the disclosed technology is not limited to this. As long as the cross-sectional areas in the coolant flow direction are the same and the distance ΔL3 between the upper ends of adjacent first flow paths 1110a1 is shorter than the distance ΔL4 between the upper ends of adjacent second flow paths 1110a2, other shapes may be used, for example, as shown in FIGS. 15 to 17 . FIGS. 15 to 17 are diagrams showing other examples of the cross sections of the first flow path 1110a1 and the second flow path 1110a2. The cross-sectional shapes of the first flow path 1110a1 and the second flow path 1110a2 illustrated in FIGS. 15 to 17 allow the vertical length of the second flow path 1110a2 to be shortened. This allows the thickness of the base 1110 to be reduced, thereby enabling the plasma processing apparatus 1 to be miniaturized.

[0085] In the above-described embodiment, a capacitively coupled plasma (CCP) is used as an example of the plasma source, but the disclosed technology is not limited to this. For example, other plasma sources such as microwave plasma and inductively coupled plasma (ICP) may be used as the plasma source.

[0086] Furthermore, in the above embodiment, the plasma processing apparatus 1 that performs processing using plasma has been described as an example, but the disclosed technology is not limited to this. The disclosed technology can also be applied to a substrate processing apparatus that does not use plasma, as long as it is an apparatus that changes the temperature of the substrate W.

[0087] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0088] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0089] (Supplementary Note 1) A substrate processing apparatus comprising: a chamber; a substrate support part disposed within the chamber and supporting a substrate, the substrate support part having a first flow path and a second flow path formed therein through which a coolant circulates; a first supply pipe connected to the first flow path and supplying the coolant to the first flow path; a first discharge pipe connected to the first flow path and for discharging the coolant that has flowed through the first flow path; a second supply pipe connected to the second flow path and supplying the coolant to the second flow path; a second discharge pipe connected to the second flow path and for discharging the coolant that has flowed through the second flow path; a first valve provided on the first supply pipe or the first discharge pipe; and a second valve provided on the second supply pipe or the second discharge pipe, wherein the first flow path and the second flow path are provided adjacent to each other along a mounting surface of the substrate support part on which the substrate is placed. (Supplementary Note 2) The substrate processing apparatus of Supplementary Note 1, further comprising a control unit configured to perform the following steps: (a) controlling the first valve and the second valve to open the first valve and close the second valve when maintaining the temperature of the substrate at a first temperature, and (b) controlling the first valve and the second valve to open the first valve and the second valve when changing the temperature of the substrate from the first temperature to a second temperature lower than the first temperature. (Supplementary Note 3) The substrate processing apparatus of Supplementary Note 2, further comprising: a third pipe connected between the first supply pipe and the first discharge pipe; and a third valve provided on the third pipe, and the control unit configured to further perform the following steps: (c) controlling the third valve to open the third valve when changing the temperature of the substrate from the second temperature to the first temperature. (Appendix 4) A substrate processing apparatus according to any one of appendices 1 to 3, wherein the first valve is provided in the first exhaust pipe, the second supply pipe is connected to the first exhaust pipe between the first flow path and the first valve, and the second valve is provided in the second exhaust pipe.(Supplementary Note 5) The substrate processing apparatus according to any one of Supplements 1 to 4, wherein a distance between the placement surface and an upper end of the first flow path is the same as a distance between the placement surface and an upper end of the second flow path. (Supplementary Note 6) The substrate processing apparatus according to any one of Supplements 1 to 5, wherein the first flow path and the second flow path are alternately arranged along a radial direction of the placement surface. (Supplementary Note 7) The substrate processing apparatus according to Supplementary Note 6, wherein the first flow path and the second flow path are arranged in a spiral shape when viewed from a direction intersecting the placement surface. (Supplementary Note 8) The substrate processing apparatus according to any one of Supplements 1 to 7, wherein a distance between uppermost ends of adjacent first flow paths in a direction along the placement surface is smaller than a distance between uppermost ends of adjacent second flow paths. (Supplementary Note 9) The substrate processing apparatus according to any one of Supplements 1 to 8, wherein the first flow path and the second flow path have different cross-sectional shapes in the direction in which the coolant flows and the same cross-sectional area in the direction in which the coolant flows. (Supplementary Note 10) The substrate processing apparatus according to Supplementary Note 9, wherein a lower end of the second flow path is located lower than a lower end of the first flow path. (Supplementary Note 11) The substrate processing apparatus according to any one of Supplementary Notes 1 to 10, wherein the substrate support unit includes a base, and the first flow path and the second flow path are integrally formed within the base.(Supplementary Note 12) A control method for a substrate processing apparatus comprising: a chamber; a substrate support part disposed within the chamber and supporting a substrate, the substrate support part having a first flow path and a second flow path formed therein through which a coolant circulates; a first supply pipe connected to the first flow path and supplying the coolant to the first flow path; a first discharge pipe connected to the first flow path and for discharging the coolant that has flowed through the first flow path; a second supply pipe connected to the second flow path and supplying the coolant to the second flow path; a second discharge pipe connected to the second flow path and for discharging the coolant that has flowed through the second flow path; a first valve provided on the first supply pipe or the first discharge pipe; a second valve provided on the second supply pipe or the second discharge pipe; and a controller, wherein the first flow path and the second flow path are provided adjacent to each other along a mounting surface of the substrate support part on which the substrate is placed, the controller (a) controlling the first valve and the second valve to open the first valve and close the second valve when the temperature of the substrate is to be maintained at a first temperature, and (b) controlling the first valve and the second valve to open the first valve and the second valve when the temperature of the substrate is to be changed from the first temperature to a second temperature lower than the first temperature. (Supplementary Note 13) The substrate processing apparatus further includes: a third pipe connected between the first supply pipe and the first discharge pipe; and a third valve provided on the third pipe, and the control unit further performs the control method of Supplementary Note 12, wherein the control unit further performs the step of: (c) controlling the third valve to open the third valve when the temperature of the substrate is to be changed from the second temperature to the first temperature.

[0090] REFERENCE SIGNS LIST W substrate 1 plasma processing apparatus 10 plasma processing chamber 10s plasma processing space 11 substrate support 111 main body 111a central region 111b annular region 1110 base 1110a flow path 1110a1 first flow path 1110a2 second flow path 1111 electrostatic chuck 112 ring assembly 13 showerhead 2 control unit 2a computer 2a1 processing unit 2a2 memory unit 2a3 communication interface 20 gas supply unit 30 power supply 31 RF power supply 32 DC power supply 40 exhaust system 50 chiller unit 50a piping 50b piping 51a first supply pipe 51b first exhaust pipe 51c first valve 52a second supply pipe 52b second exhaust pipe 52c second valve 53a Third pipe 53b Third valve

Claims

1. A substrate processing apparatus comprising: a chamber; a substrate support part disposed within the chamber and supporting a substrate, the substrate support part having a first flow path and a second flow path formed therein through which a coolant circulates; a first supply pipe connected to the first flow path and supplying coolant to the first flow path; a first discharge pipe connected to the first flow path and for discharging the coolant that has flowed through the first flow path; a second supply pipe connected to the second flow path and supplying coolant to the second flow path; a second discharge pipe connected to the second flow path and for discharging the coolant that has flowed through the second flow path; a first valve provided on the first supply pipe or the first discharge pipe; and a second valve provided on the second supply pipe or the second discharge pipe, wherein the first flow path and the second flow path are provided adjacent to each other along the mounting surface of the substrate support part on which the substrate is placed.

2. The substrate processing apparatus of claim 1, further comprising a control unit configured to perform the following steps: (a) controlling the first valve and the second valve so that the first valve is opened and the second valve is closed when the temperature of the substrate is to be maintained at a first temperature; and (b) controlling the first valve and the second valve so that the first valve and the second valve are opened when the temperature of the substrate is to be changed from the first temperature to a second temperature lower than the first temperature.

3. The substrate processing apparatus according to claim 2, further comprising: a third pipe connected between the first supply pipe and the first discharge pipe; and a third valve provided on the third pipe, wherein the control unit is configured to further execute the step of: (c) controlling the third valve so as to open the third valve when the temperature of the substrate is changed from the second temperature to the first temperature.

4. The substrate processing apparatus of claim 1, wherein the first valve is provided in the first exhaust pipe, the second supply pipe is connected to the first exhaust pipe between the first flow path and the first valve, and the second valve is provided in the second exhaust pipe.

5. The substrate processing apparatus according to claim 1, wherein the distance between the placement surface and the upper end of the first flow path is the same as the distance between the placement surface and the upper end of the second flow path.

6. The substrate processing apparatus according to claim 1, wherein the first flow paths and the second flow paths are alternately arranged along the radial direction of the placement surface.

7. The substrate processing apparatus according to claim 6, wherein the first flow path and the second flow path are arranged in a spiral shape when viewed from a direction intersecting the placement surface.

8. The substrate processing apparatus according to claim 1, wherein the distance between the uppermost ends of adjacent first flow paths in the direction along the placement surface is shorter than the distance between the uppermost ends of adjacent second flow paths.

9. The substrate processing apparatus according to claim 1, wherein the first flow path and the second flow path have different cross-sectional shapes in the direction in which the coolant flows, but have the same cross-sectional area in the direction in which the coolant flows.

10. The substrate processing apparatus according to claim 9, wherein a lower end of the second flow path is located lower than a lower end of the first flow path.

11. The substrate processing apparatus according to claim 1, wherein the substrate support portion includes a base, and the first flow path and the second flow path are integrally formed within the base.

12. A control method for a substrate processing apparatus comprising: a chamber; a substrate support part disposed within the chamber and supporting a substrate, the substrate support part having a first flow path and a second flow path formed therein through which a coolant circulates; a first supply pipe connected to the first flow path and supplying coolant to the first flow path; a first discharge pipe connected to the first flow path and for discharging the coolant that has flowed through the first flow path; a second supply pipe connected to the second flow path and supplying coolant to the second flow path; a second discharge pipe connected to the second flow path and for discharging the coolant that has flowed through the second flow path; a first valve provided on the first supply pipe or the first discharge pipe; a second valve provided on the second supply pipe or the second discharge pipe; and a control part, wherein the first flow path and the second flow path are provided adjacent to each other along a mounting surface of the substrate support part on which the substrate is placed, the control part A control method comprising: (a) controlling the first valve and the second valve so that the first valve is opened and the second valve is closed when the temperature of the substrate is to be maintained at a first temperature; and (b) controlling the first valve and the second valve so that the first valve and the second valve are opened when the temperature of the substrate is to be changed from the first temperature to a second temperature lower than the first temperature.

13. The control method according to claim 12, wherein the substrate processing apparatus further comprises: a third pipe connected between the first supply pipe and the first discharge pipe; and a third valve provided on the third pipe; and the control unit further executes the step of: (c) controlling the third valve so as to open the third valve when the temperature of the substrate is changed from the second temperature to the first temperature.

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