Semiconductor device, and light-emitting apparatus comprising same

Abstract

According to one aspect of the present invention, a semiconductor device can be provided, the device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; a quantum well emissive layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a hole injection enhancement layer which includes Al and Mg and which is disposed between the quantum well emissive layer and the second conductive semiconductor layer, wherein the Al amount profile according to depth in the hole injection enhancement layer has an Al content peak, and the Mg concentration profile in the hole injection enhancement layer has a greater number of Mg concentration peaks than the Al content peak.

Description

Semiconductor devices and light-emitting devices including the same

[0001] The present invention relates to a semiconductor device and a light-emitting device including the same.

[0002] Advances in information and communication technology have led to an increasing need for semiconductor devices. Semiconductor devices are manufactured by layering different materials on a substrate. For example, an electron-coupling layer, an electron-moderating layer, a light-emitting layer, and a hole-injection enhancement layer may be layered on the substrate, each containing different materials.

[0003] Semiconductor devices can emit light when electrons emitted from an N-type semiconductor and holes generated from a P-type semiconductor recombine in the light-emitting layer. The luminous efficiency of such semiconductor devices improves when the concentration of electrons and holes in the light-emitting layer is balanced. In order to balance the concentration of electrons and holes, an electron-coupling layer, an electron-moderating layer, and a hole-injection enhancing layer are arranged in the semiconductor device. On the other hand, in conventional semiconductor devices, there was a limit to balancing the electron-hole concentrations simply by forming an electron-coupling layer, an electron-moderating layer, and a hole-injection enhancing layer, and this caused a problem in that the luminous efficiency of the semiconductor device was reduced.

[0004] Therefore, there was a need for a semiconductor device in which a hole injection enhancement layer could induce holes so that holes formed in a semiconductor layer could be injected into a light-emitting layer.

[0005] Embodiments of the present invention aim to provide a semiconductor device that enhances hole injection into a light-emitting layer by doping with Mg according to the Al content distribution.

[0006] According to one aspect of the present invention, a first conductive semiconductor layer; a second conductive semiconductor layer;

[0007] A semiconductor device can be provided, comprising: a quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, wherein an Al content profile according to depth in the hole injection enhancement layer has an Al content peak, and an Mg concentration profile in the hole injection enhancement layer has a greater number of Mg concentration peaks than the Al content peaks.

[0008] In addition, a semiconductor device can be provided in which the Al content profile has a plurality of Al content peaks and one or more Al valleys, the plurality of Al content peaks including a first Al peak having a maximum content among the plurality of Al content peaks, and a difference between the content of the first Al peak and the content of the Al valley is 20% or more.

[0009] In addition, a semiconductor device may be provided in which the plurality of Al content peaks further include a second Al peak formed further above the first Al peak, and the plurality of Al content peaks have a smaller content than the first Al peak, and a depth difference between the first Al peak and the Al valley is smaller than the depth difference between the second Al peak and the Al valley.

[0010] In addition, a semiconductor device may be provided in which the first Al peak is positioned lower than the Al valley, and the first Al peak is positioned lower than the center between the boundary between the quantum well light-emitting layer and the hole injection enhancement layer and the Al valley.

[0011] In addition, a semiconductor element may be provided in which the Al valley is located lower than the center of the hole injection enhancement layer.

[0012] In addition, a semiconductor device may be provided in which the Mg concentration profile has a plurality of Mg concentration peaks and one or more Mg valleys, and the plurality of Mg concentration peaks include a first Mg peak having a maximum concentration value among the plurality of Mg concentration peaks; a second Mg peak formed above the first Mg peak; and a third Mg peak formed above the second Mg peak and having a minimum concentration value among the plurality of Mg concentration peaks.

[0013] In addition, a semiconductor device may be provided in which the Al valley is positioned between the first Mg peak and the second Mg peak.

[0014] In addition, a semiconductor device can be provided in which the Al content profile includes an Al valley region, the Mg concentration profile includes an Mg valley region formed to overlap at least a portion of the Al valley region, and the Al valley is arranged in the Al valley region and the Mg valley is arranged in the Mg valley region.

[0015] In addition, a semiconductor device may be provided in which the first Mg peak is positioned between the first Al peak and the Al valley.

[0016] Additionally, a semiconductor device can be provided in which the depth difference between the first Mg peak and the first Al peak is greater than the depth difference between the first Mg peak and the Al valley.

[0017] Additionally, a semiconductor device may be provided in which a depth difference between the first Mg peak and the second Mg peak is smaller than a depth difference between the second Mg peak and the third Mg peak.

[0018] Additionally, a semiconductor device can be provided in which a depth difference between the Mg valley and the first Mg peak is greater than a depth difference between the Mg valley and the second Mg peak.

[0019] In addition, a semiconductor device can be provided, comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; a quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, wherein an Al content profile according to depth in the hole injection enhancement layer has a plurality of Al content peaks, an Mg concentration profile in the hole injection enhancement layer has a plurality of Mg concentration peaks, and an Al content peak disposed at the uppermost side among the plurality of Al content peaks is disposed closer to the quantum well light-emitting layer than an Mg concentration peak disposed at the uppermost side among the plurality of Mg concentration peaks.

[0020] In addition, a semiconductor device can be provided, wherein the Al content profile has a plurality of Al content peaks and one or more Al valleys, and the plurality of Al content peaks includes a first Al peak having a maximum content among the plurality of Al content peaks, and a second Al peak having a content smaller than the first Al peak among the plurality of Al content peaks and disposed closer to the second conductive semiconductor layer than the first Al peak.

[0021] Additionally, a semiconductor device can be provided in which the depth difference between the first Al peak and the Al valley is greater than the depth difference between the second Al peak and the Al valley.

[0022] In addition, a semiconductor device may be provided in which the Mg concentration profile has a plurality of Mg concentration peaks and one or more Mg valleys, and the plurality of Mg concentration peaks include a first Mg peak having a maximum concentration value among the plurality of Mg concentration peaks; a second Mg peak formed above the first Mg peak; and a third Mg peak formed above the second Mg peak and having a minimum concentration value among the plurality of Mg concentration peaks.

[0023] In addition, a semiconductor device can be provided, including a first conductive semiconductor layer; a second conductive semiconductor layer; a quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, wherein the hole injection enhancement layer includes a first hole injection region and a second hole injection region, and the second hole injection region has an Al content that gradually increases as it gets closer to the quantum well light-emitting layer.

[0024] In addition, a semiconductor device can be provided in which the hole injection enhancement layer further includes a third hole injection region, and Al valleys and Mg valleys are arranged in the third hole injection region.

[0025] In addition, a semiconductor device can be provided in which the hole injection enhancement layer further includes a fourth hole injection region, and a difference between the maximum and minimum values ​​of the Al content in the fourth hole injection region is smaller than a difference between the maximum and minimum values ​​of the Al content in the third hole injection region.

[0026] In addition, a semiconductor device can be provided in which the hole injection enhancement layer further includes a fifth hole injection region, and the Al content and Mg concentration in the fifth hole injection region increase as it approaches the second conductive semiconductor layer.

[0027] Embodiments of the present invention have the effect of enhancing the injection of holes into the light-emitting layer by doping Mg in the Al content distribution.

[0028] FIG. 1 is a drawing showing a semiconductor device according to a first embodiment of the present invention.

[0029] FIG. 2 is a drawing showing a second conductive semiconductor layer, a hole injection enhancement layer, and a quantum well light-emitting layer of a semiconductor device according to the first embodiment of the present invention.

[0030] FIG. 3 is a drawing showing an Al peak region and an Al valley region included in a hole injection enhancement layer in the first embodiment of the present invention.

[0031] FIG. 4 is a drawing showing a Mg peak region and a Mg valley region included in a hole injection enhancement layer according to a first embodiment of the present invention.

[0032] FIG. 5 is a drawing showing a hole injection region included in a hole injection enhanced layer according to the first embodiment.

[0033] FIG. 6 is a drawing showing an Al peak region and an Al valley region included in a hole injection enhancement layer in a second embodiment of the present invention.

[0034] Fig. 7 is an exploded perspective view illustrating a lighting device to which an embodiment of the present invention is applied.

[0035] Figure 8 is a cross-sectional view illustrating an applied display device to which an embodiment of the present invention is applied.

[0036] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0037] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0038] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in a reverse order from the described sequence. Furthermore, like reference numerals designate like elements.

[0039] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to a physical, electrical, and / or fluid connection, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0040] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0041] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0042] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0043] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0044] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally, may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0045] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0046] Hereinafter, a semiconductor device (1) according to the first embodiment of the present invention will be described.

[0047] Referring to FIG. 1, a semiconductor device (1) according to a first embodiment of the present invention can be used as a component of an electronic circuit or the like by utilizing the electrical conductivity properties of a semiconductor. As an example, the semiconductor device (1) can be used as a light-emitting diode (LED). This semiconductor device (1) can include a substrate (100), a first conductive semiconductor layer (200), a quantum well emitting layer (700), a hole injection enhancement layer (800), and a second conductive semiconductor layer (900). In addition, a stress relief layer (300), an electron coupling layer (400), an electron moderation layer (500), and a well preparation layer (600) may be additionally disposed between the first conductive semiconductor layer (200) and the quantum well emitting layer (700).

[0048] The substrate (100) can support at least one of the first conductive semiconductor layer (200), the quantum well light-emitting layer (700), the hole injection enhancement layer (800), and the second conductive semiconductor layer (900). The substrate (100) can be placed on the lowest or highest side of the semiconductor element (1). As an example, the substrate (100) can be one of an insulating substrate, a sapphire substrate, a GaN substrate, a SiC substrate, and a Si substrate. In addition, various types of substrates (100) can be applied to the semiconductor element (1).

[0049] The first conductive semiconductor layer (200) may be N-type or P-type and may include various materials. For example, the first conductive semiconductor layer (200) may have electrons as the main charge carrier. In addition, the first conductive semiconductor layer (200) may inject electrons into the quantum well light-emitting layer (700). As another example, the first conductive semiconductor layer (200) may have holes as the main charge carrier. In addition, the first conductive semiconductor layer (200) may inject holes into the quantum well light-emitting layer (700). The first conductive semiconductor layer (200) may be laminated on an upper side than the substrate (100). For example, the first conductive semiconductor layer (200) may be laminated on the substrate (100). Meanwhile, the expressions of upper and lower in the present specification are described based on the drawings, and it is to be noted in advance that the expressions may be different if the direction of the corresponding object is changed. This first challenge type semiconductor layer (200) may include a first electrode (201).

[0050] The first electrode (201) may be formed to be electrically conductive with the first conductive semiconductor layer (200). In other words, the first electrode (201) may be electrically connected to the first conductive semiconductor layer (200). The first electrode (201) may be disposed on the upper side of the first conductive semiconductor layer (200). For example, the first electrode (201) may be disposed on the first conductive semiconductor layer (200).

[0051] The stress relief layer (300) can absorb or disperse mechanical stress due to temperature changes. In other words, the stress relief layer (300) can relieve thermal stress in a low-temperature environment. The stress relief layer (300) can prevent cracks from occurring due to stress caused by a difference in thermal expansion coefficients between layers of the semiconductor element (1). In addition, the stress relief layer (300) can increase the stability of the semiconductor element (1). This stress relief layer (300) can be laminated on an upper side than the first conductive semiconductor layer (200). For example, the stress relief layer (300) can be laminated on the first conductive semiconductor layer (200).

[0052] The electron-coupling layer (400) can prevent electrons or holes injected from the first conductive semiconductor layer (200) or the second conductive semiconductor layer (900) from excessively flowing out through the quantum well light-emitting layer (700) to the second conductive semiconductor layer (900) or the first conductive semiconductor layer (200) on the opposite side. In other words, the electrons can be effectively confined in the quantum well light-emitting layer (700) to increase the possibility of recombination of electrons and holes. The electron-coupling layer (400) can be formed with a composition having a larger band gap than the quantum well light-emitting layer (700). In addition, the electron-coupling layer (400) can be an energy barrier that can control the energy band flow of electrons. The electron-coupling layer (400) can be laminated on an upper side than the stress-relieving layer (300). For example, the electron-coupling layer (400) can be laminated on the stress-relieving layer (300).

[0053] The electron moderation layer (500) can control or slow down the movement of electrons injected from the first conductive semiconductor layer (200) or the second conductive semiconductor layer (900). In other words, the electron moderation layer (500) can reduce the movement energy or speed of electrons. The electron moderation layer (500) can prevent electrons from passing through or being deflected by the quantum well light-emitting layer (700). The electron moderation layer (500) can be laminated on an upper side than the electron coupling layer (400). For example, the electron moderation layer (500) can be laminated on the electron coupling layer (400).

[0054] The well-conducting preparation layer (600) can control lattice matching, band alignment, or electric field distribution. The well-conducting preparation layer (600) can be laminated on top of the electron moderation layer (500). For example, the well-conducting preparation layer (600) can be laminated on top of the electron moderation layer (500). In addition, the well-conducting preparation layer (600) can be formed on the lower side of the quantum well emission layer (700). The well-conducting preparation layer (600) can improve the efficiency of electron injection into the quantum well emission layer (700). In addition, the vertical distribution of charges can be stabilized to improve the luminescence efficiency.

[0055] Referring further to FIGS. 2 to 5, the quantum well light-emitting layer (700) can generate light to be emitted to the outside. The quantum well light-emitting layer (700) can be disposed between the first conductive semiconductor layer (200) and the second conductive semiconductor layer (900). At least one of electrons and holes emitted from either the first conductive semiconductor layer (200) or the second conductive semiconductor layer (900) can flow into the quantum well light-emitting layer (700). In the quantum well light-emitting layer (700), electrons and holes can recombine to emit light. In other words, light formed in the quantum well light-emitting layer (700) can be emitted to the outside. The quantum well light-emitting layer (700) can emit light of a color such as blue, green, red, or ultraviolet.

[0056] This quantum well light-emitting layer (700) may include Al or In. In the quantum well light-emitting layer (700), the Al or In content value may increase and decrease repeatedly depending on the depth. In other words, an Al or In content profile depending on the depth may be formed in the quantum well light-emitting layer (700), and the Al or In content profile in this quantum well light-emitting layer (700) may have a shape that vibrates as the depth increases or decreases in at least some depth region. In addition, as the depth of the Al or In content profile in the quantum well light-emitting layer (700) increases, the vibration amplitude may become larger.

[0057] The quantum well light-emitting layer (700) may include at least one well layer and at least one barrier layer. The energy band gap of the well layer may be smaller than the energy band gap of the barrier layer. In one embodiment, the well layer may include a first region having a first energy band gap and a second region having a second energy band gap. The energy band gap of the first region may be larger than the energy band gap of the second region. Due to the difference in band gap between the first region and the second region, the spectral width of light emitted from the quantum well light-emitting layer (700) may be increased.

[0058] The hole injection enhancement layer (800) can induce holes introduced from the first conductive semiconductor layer (200) or the second conductive semiconductor layer (900) to be injected into the quantum well light-emitting layer (700). In other words, it can prevent holes introduced from the first conductive semiconductor layer (200) or the second conductive semiconductor layer (900) from moving in the wrong or unintended direction, thereby balancing the concentration of electrons and holes in the quantum well light-emitting layer (700).

[0059] The hole injection enhancement layer (800) may be disposed between the quantum well light-emitting layer (700) and the second conductive semiconductor layer (900). The hole injection enhancement layer (800) may include Al and Mg. An Al content profile and a Mg concentration profile may be formed in the hole injection enhancement layer (800) depending on the depth. The hole injection enhancement layer (800) may include at least one of an Al peak region (810), an Al valley region (820), a Mg peak region (830), a Mg valley region (840), or a hole injection region (850).

[0060] The Al peak region (810) may include a depth region in which the Al content increases with increasing depth among the Al content profiles and then reverses to decrease the Al content. A plurality of Al peaks (811a, 812a) may be formed in the Al peak region (810). This Al peak region (810) may include a first Al peak region (811) and a second Al peak region (812).

[0061] A first Al peak (811a) may be formed in the first Al peak region (811). The Al content in the first Al peak region (811) may increase and then decrease as the depth increases. The first Al peak region (811) may be arranged closer to the quantum well light-emitting layer (700) than the second Al peak region (812), or may be arranged relatively further down. In other words, the first Al peak region (811) may be arranged at a deeper depth than the second Al peak region (812). Therefore, the difference in refractive index due to the energy band gap difference between the well layer with a small energy band gap and the first Al peak (811a) may be increased, thereby increasing the extraction of light generated in the well layer.

[0062] The first Al peak (811a) may be the maximum value of the Al content in the first Al peak region (811). The first Al peak (811a) may have the maximum Al content value among the plurality of Al peaks (811a, 812a). The first Al peak (811a) may be arranged between the second Al peak (812a) to be described later and the quantum well light-emitting layer (700). In other words, the first Al peak (811a) may be arranged at a deeper location than the second Al peak (812a). The first Al peak (811a) may be arranged lower than the center between the boundary between the quantum well light-emitting layer (700) and the hole injection enhancement layer (800) and the Al valley (820a). In other words, the first Al peak (811a) may be arranged closer to the quantum well light-emitting layer (700) based on the center between the point where the quantum well light-emitting layer (700) and the hole injection enhancement layer (800) meet and the Al valley (820a). The depth difference between the first Al peak (811a) and the Al valley (820a) may be smaller than the depth difference between the second Al peak (812a) and the Al valley (820a). In the present specification, the 'depth difference' may mean the distance difference on the horizontal axis in FIGS. 2 to 6. By making the first Al peak (811a) closer to the quantum well light-emitting layer (700) than to the second conductive semiconductor layer (900), the injection of holes into the quantum well light-emitting layer (700) may be enhanced.

[0063] The second Al peak region (812) may include a second Al peak (812a). The Al content in the second Al peak region (812) may increase and then decrease as the depth increases at a shallower depth than the first Al peak region (811). The second Al peak region (812) may be arranged between the second conductive semiconductor layer (900) and the first Al peak region (811). As an example, the second Al peak region (812) may be in contact with the lower boundary surface of the second conductive semiconductor layer (900).

[0064] The second Al peak region (812) may be positioned closer to the second conductive semiconductor layer (900) than the first Al peak region (811). Therefore, the second Al peak region (812) may increase the charge injection efficiency occurring at the interface with the second electrode (901) to be described later, thereby reducing the ohmic contact resistance between the second conductive semiconductor layer (900) and the second electrode (901).

[0065] The second Al peak (812a) may be the maximum value of the Al content in the second Al peak region (812). The second Al peak (812a) may have a lower Al content than the first Al peak (811a) among the plurality of Al peaks (811a, 812a). The second Al peak (812a) may be arranged closer to the second conductive semiconductor layer (900) than the first Al peak (811a). In other words, the second Al peak (812a) may be arranged at a shallower depth than the first Al peak (811a).

[0066] The second Al peak (812a) may be positioned closer to the second electrode (901) than the first Al peak (811a). The second Al peak (812a) may include a lower Al content than the first Al peak (811a). In other words, the Al content of the second Al peak (812a) closer to the second electrode (901) may be lower. Therefore, the heat generation of the device may be reduced due to the low Al content in the region adjacent to the second electrode (901).

[0067] The Al valley region (820) may be a region in which the concentration of Al decreases as the depth increases among the Al content profile formed in the hole injection enhancement layer (800) and then reverses to increase the concentration of Al. The Al valley region (820) may be positioned between the first Al peak region (811) and the second Al peak region (812). In addition, the depth difference between the Al valley region (820) and the first Al peak region (811) may be smaller than the depth difference between the Al valley region (820) and the second Al peak region (812).

[0068] The Al valley region (820) may be arranged closer to the first Al peak region (811) than to the second Al peak region (812). In other words, the Al valley region (820) may be arranged closer to the upper side of the first Al peak region (811) than to the lower side of the second Al peak region (812). Therefore, the Al valley region (820) may reduce the Al content change rate of the second Al peak region (812) closer to the second conductive semiconductor layer (900), thereby flattening the internal electric field, thereby reducing the leakage current. An Al valley (820a) may be formed in the Al valley region (820).

[0069] The Al valley (820a) may be the minimum Al content in the Al valley region (820). The Al valley (820a) may be arranged between the first Al peak (811a) and the second Al peak (812a). The difference between the content of the Al valley (820a) and the content of the first Al peak (811a) may be 20% or more. The Al valley (820a) may be arranged closer to the quantum well light-emitting layer (700) with respect to the center of the hole injection enhanced layer (800). In other words, the Al valley (820a) may be formed at a deeper position than the center of the hole injection enhanced layer (800). By making the Al valley (820a) closer to the quantum well light-emitting layer (700) than the second conductive semiconductor layer (900), the amount of Mg dopant injected into the quantum well light-emitting layer (700) can be increased.

[0070] When the Al content profile and the Mg concentration profile are superimposed, the Al valley (820a) can be positioned between the first Mg peak (831a) and the second Mg peak (832a), which will be described later. The Al valley (820a) can be positioned between multiple Mg peaks to enhance the Mg polarization doping effect.

[0071] The Mg peak region (830) may be a region in which the concentration of Mg increases with increasing depth among the Mg concentration profiles formed in the hole injection enhancement layer (800) and then reverses to decrease in concentration. A plurality of Mg concentration peaks (831a, 832a, 833a) may be formed in the Mg peak region (830). This Mg peak region (830) may include a first Mg peak region (831), a second Mg peak region (832), and a third Mg peak region (833).

[0072] A first Mg peak (831a) may be formed in the first Mg peak region (831). The Mg concentration value in the first Mg peak region (831) may increase and then decrease as the depth increases. The first Mg peak region (831) may be positioned lower than the second Mg peak region (832). In other words, the first Mg peak region (831) may be positioned deeper than the second Mg peak region (832).

[0073] The first Mg peak (831a) may be the maximum value of the Mg concentration in the first Mg peak region (831). The first Mg peak (831a) may have the maximum Mg concentration value among the plurality of Mg concentration peaks (831a, 832a, 833a). The first Mg peak (831a) may be arranged between the Mg valley (840a) and the quantum well luminescent layer (700). In other words, the first Mg peak (831a) may be arranged deeper than the Mg valley (840a). When the Al content profile and the Mg concentration profile are superimposed, the first Mg peak (831a) may be arranged between the first Al peak (811a) and the Al valley (820a). By arranging the first Mg peak (831a) between the first Al peak (811a) and the Al valley (820a), the barrier height of Al can be overcome, and hole injection into the quantum well light-emitting layer (700) can be enhanced. The depth difference between the first Mg peak (831a) and the first Al peak (811a) may be greater than the depth difference between the first Mg peak (831a) and the Al valley (820a). The resistance can be distributed by the depth difference between the first Mg peak (831a) and the first Al peak (811a) and the depth difference between the first Mg peak (831a) and the Al valley (820a).

[0074] A second Mg peak (832a) may be formed in the second Mg peak region (832). The Mg concentration value in the second Mg peak region (832) may increase as the depth increases at a shallower depth than the second Mg peak region (832), and then may be reversed to decrease. The second Mg peak region (832) may be arranged between the first Mg peak region (831) and the third Mg peak region (833). In addition, the second Mg peak region (832) may be arranged between the Mg valley region (840) and the third Mg peak region (833). The second Mg peak region (832) may be arranged above the Mg valley region (840). In other words, the second Mg peak region (832) may be arranged at a shallower location than the Mg valley region (840).

[0075] The second Mg peak (832a) may be the maximum value of the Mg concentration in the second Mg peak region (832). The second Mg peak (832a) may be positioned above the first Mg peak (831a). In other words, the second Mg peak (832a) may be formed at a shallower depth than the first Mg peak (831a). In addition, the second Mg peak (832a) may be formed between the Mg valley (840a) and the third Mg peak (833a).

[0076] A third Mg peak (833a) may be formed in the third Mg peak region (833). The Mg concentration value in the third Mg peak region (833) may increase and then decrease as the depth increases at a shallower depth than the second Mg peak region (832). The third Mg peak region (833) may be arranged between the second Mg peak region (832) and the second conductive semiconductor layer (900). As an example, the third Mg peak region (833) may be in contact with the lower boundary surface of the second conductive semiconductor layer (900). In addition, when the Al content profile and the Mg concentration profile are superimposed, the third Mg peak region (833) may overlap at least partially with the second Al peak region (812). Therefore, the injection direction of holes is controlled to be uniformly injected, thereby reducing localized light emission of the light-emitting element.

[0077] The third Mg peak (833a) may be the maximum value of the Mg composition in the third Mg peak region (833). The third Mg peak (833a) may have the minimum concentration value among the plurality of Mg concentration peaks (831a, 832a, 833a). The third Mg peak (833a) may be formed above the second Mg peak (832a). In other words, the third Mg peak (833a) may be formed at a shallower depth than the second Mg peak (832a).

[0078] The depth difference between the first Mg peak (831a) and the second Mg peak (832a) may be smaller than the depth difference between the second Mg peak (832a) and the third Mg peak (833a). The first Mg peak (831a) and the second Mg peak (832a) may be arranged closer to the quantum well light-emitting layer (700) than to the first conductive semiconductor layer (200) to prevent Mg from acting as a resistor. When the Al content profile and the Mg concentration profile are superimposed, the Mg concentration value at the center of the depth between the second Mg peak (832a) and the third Mg peak (833a) may be smaller than the Al concentration value.

[0079] The Mg valley region (840) may be a region in which the concentration of Mg decreases as the depth increases among the Mg concentration profiles formed in the hole injection enhancement layer (800) and then reverses to increase the concentration of Mg. The Mg valley region (840) may be arranged between the first Mg peak region (831) and the second Mg peak region (832). In addition, the depth difference between the Mg valley region (840) and the first Mg peak region (831) may be greater than the depth difference between the first Mg peak region (831) and the second Mg peak region (832). An Mg valley (840a) may be formed in the Mg valley region (840). The Mg valley region (840) may be formed to at least partially overlap the Al valley region (820). Therefore, it is possible to prevent the energy barrier of the hole from becoming excessively large, thereby preventing the accumulation of holes that do not contribute to light emission.

[0080] The Mg valley (840a) may be a minimum value in the Mg valley region (840). The Mg valley (840a) may be arranged between the first Mg peak (831a) and the second Mg peak (832a). The depth difference between the Mg valley (840a) and the first Mg peak (831a) may be greater than the depth difference between the Mg valley (840a) and the second Mg peak (832a). The Mg valley (840a) may be arranged closer to the quantum well light-emitting layer (700) with respect to the center of the hole injection enhanced layer (800).

[0081] The hole injection region (850) can induce holes introduced from the first conductive semiconductor layer (200) or the second conductive semiconductor layer to be injected into the quantum well light-emitting layer (700). The hole injection region (850) can be formed between the quantum well light-emitting layer (700) and the second conductive semiconductor layer (900). In other words, the uppermost side of the hole injection region (850) can be in contact with the boundary surface of the second conductive semiconductor layer (900), and the lowermost side of the hole injection region (850) can be in contact with the boundary surface of the quantum well light-emitting layer (700). This hole injection region (850) may include a first hole injection region (851), a second hole injection region (852), a third hole injection region (853), a fourth hole injection region (854), and a fifth hole injection region (855) that are sequentially formed in a direction in which the depth decreases.

[0082] The first hole injection region (851) may be arranged on the upper portion of the quantum well light-emitting layer (700). In other words, the first hole injection region (851) may be formed at a shallower depth than the quantum well light-emitting layer (700). For example, the first hole injection region (851) may be in contact with a boundary surface of the quantum well light-emitting layer (700). The first hole injection region (851) may include Al, Mg, and In. The Al content in the first hole injection region (851) may decrease as the depth increases. The Mg concentration value in the first hole injection region (851) may decrease as the depth increases. The In concentration value in the first hole injection region (851) may increase as the depth increases. Additionally, the Al content may be greater than the In content at the lowest side of the first hole injection region (851).

[0083] The second hole injection region (852) may be positioned above the first hole injection region (851). In other words, the second hole injection region (852) may be formed at a shallower depth than the first hole injection region (851). In the second hole injection region (852), the Al content may increase as the depth increases. In the second hole injection region (852), the Mg concentration value may decrease and then increase as the depth increases. Therefore, the hole injection speed may be controlled by controlling the Al content and the Mg concentration value.

[0084] At the lower portion of the second hole injection region (852), an In content profile that is continuously formed with the In content profile in the first hole injection region (851) may be extended and formed. The In content profile in the second hole injection region (852) may be formed from the bottom to the center of the second hole injection region (852). The In content at the upper end of the In content profile may be smaller than the Al content at the same depth position. In addition, the In content in the second hole injection region (852) may increase as the depth increases (in the direction toward the quantum well light-emitting layer (700)). Therefore, as the In content increases, the internal electric field that may occur due to the difference in lattice constants between the hole injection region (850) and the quantum well light-emitting layer (700) may be reduced.

[0085] The third hole injection region (853) may be positioned above the second hole injection region (852). In other words, the third hole injection region (853) may be formed at a shallower depth than the second hole injection region (852). An Al valley (820a) and a Mg valley (840a) may be positioned in the third hole injection region (853). Based on the same depth, the position of the Al valley (820a) may be positioned lower than the position of the Mg valley (840a).

[0086] The fourth hole injection region (854) may be arranged above the third hole injection region (853). In other words, the fourth hole injection region (854) may be formed at a shallower depth than the third hole injection region (853). The difference between the maximum and minimum values ​​of the Al content in the fourth hole injection region (854) may be smaller than the difference between the maximum and minimum values ​​of the Mg concentration. In other words, the increase and decrease in the Al content may be smaller than the increase and decrease in the Mg concentration. The thickness of the fourth hole injection region (854) may be thicker than the thickness of the second hole injection region (852). The thickness of the fourth hole injection region (854) may be thicker than the thickness of the third hole injection region (853). The thickness of the fourth hole injection region (854) may be greater than the sum of the thicknesses of the second hole injection region (852) and the third hole injection region (853). The difference between the maximum and minimum values ​​of the Al content in the fourth hole injection region (854) may be smaller than the difference between the maximum and minimum values ​​of the Al content in the third hole injection region (853). In addition, the thickness of the fourth hole injection region (854) may be thicker than the thickness of the third hole injection region (853). Therefore, the quality of the thin film can be improved, thereby increasing the luminous efficiency.

[0087] The fifth hole injection region (855) may be arranged above the fourth hole injection region (854). In other words, the fifth hole injection region (855) may be formed at a shallower depth than the fourth hole injection region (854). In addition, the fifth hole injection region (855) may be formed below the second conductive semiconductor layer (900). In other words, the fifth hole injection region (855) may be formed at a deeper depth than the second conductive semiconductor layer (900). The Al content and Mg concentration in the fifth hole injection region (855) may increase as the depth increases. The thickness of the fifth hole injection region (855) may be thinner than the thickness of the second hole injection region (852). Additionally, the thickness of the fifth hole injection region (855) may be thinner than the thickness of the third hole injection region (853). Additionally, the thickness of the fifth hole injection region (855) may be thinner than the thickness of the fourth hole injection region (854). Therefore, due to the fifth hole injection region (855), the quality of the thin film in the region close to the second conductive semiconductor layer (900) may be increased.

[0088] The second conductive semiconductor layer (900) may be N-type or P-type and may include various materials. As an example, the second conductive semiconductor layer (900) may have holes as the main charge carrier. In addition, the second conductive semiconductor layer (900) may inject holes into the quantum well light-emitting layer (700). As another example, the second conductive semiconductor layer (900) may have electrons as the main charge carrier. In addition, the second conductive semiconductor layer (900) may inject electrons into the quantum well light-emitting layer (700). The second conductive semiconductor layer (900) may be disposed on the hole injection enhancement layer (800). For example, the second conductive semiconductor layer (900) may be stacked on the hole injection enhancement layer (800). The second conductive semiconductor layer (900) may include a second electrode (901).

[0089] The second electrode (901) may be formed to be electrically conductive with the second conductive semiconductor layer (900). In other words, the second electrode (901) may be electrically connected to the second conductive semiconductor layer (900). The second electrode (901) may be disposed on the upper side of the second conductive semiconductor layer (900). For example, the second electrode (901) may be disposed on the second conductive semiconductor layer (900).

[0090] Hereinafter, the operation and effect of a semiconductor device (1) according to one embodiment of the present invention will be described.

[0091] The semiconductor device (1) can increase the concentration of holes in the quantum well light-emitting layer (700) by controlling the Al content in the hole injection enhancement layer (800). The concentration of holes in the quantum well light-emitting layer (700) can be increased by minimizing the increase or decrease in the Al content on the upper side and maximizing the increase or decrease in the Al content on the lower side based on the center of the hole injection enhancement layer (800).

[0092] In addition, the semiconductor element (1) can increase the concentration of holes in the quantum well light-emitting layer (700) by controlling the activation energy of holes by controlling the Mg concentration value. In addition, when the Al content profile and the Mg concentration profile are superimposed, the positions of the peaks and valleys due to the Al content and the peaks and valleys due to the Mg concentration can be relatively controlled to further maximize the effect of the polarization doping effect of Mg. In addition, it is possible to prevent Mg from acting as a resistor.

[0093] In addition, the semiconductor element (1) can have a uniform concentration of electrons and holes by increasing the concentration of holes in the quantum well light-emitting layer (700) by the hole injection enhancement layer (800). As the concentration of electrons and holes becomes uniform, the luminescence efficiency of the semiconductor element (1) can be improved.

[0094] Meanwhile, in addition to these configurations, a semiconductor device (1) according to a second embodiment of the present invention may be provided. Hereinafter, the second embodiment will be described with reference to FIG. 6. In describing the second embodiment, differences compared to the above-described embodiment will be mainly described, and the same description will refer to the above-described embodiment.

[0095] Referring to FIG. 6, a second Al peak (812a) may be formed in the second Al peak region (812). The Al content in the second Al peak region (812) may increase as the depth increases and then reverse to decrease. The second Al peak region (812) may be positioned between the second conductive semiconductor layer (900) and the first Al peak region (811). When the Al content profile and the Mg concentration profile are superimposed, the Al concentration peak positioned at the uppermost side among the plurality of Al concentration peaks (811a, 812a) may be formed lower than the Mg concentration peak positioned at the uppermost side among the plurality of Mg concentration peaks (831a, 832a, 833a). In other words, the second Al peak (812a) may be formed deeper than the third Mg peak (833a). Additionally, the second Al peak region (812) may overlap with the second Mg peak region (832). The depth difference between the second Al peak (812a) and the Al valley (820a) may be smaller than the depth difference between the first Al peak (811a) and the Al valley (820a).

[0096] Hereinafter, a device to which a semiconductor element (1) according to one embodiment of the present invention is applied will be described.

[0097] Fig. 7 is an exploded perspective view illustrating a lighting device using a semiconductor element (1) according to one embodiment of the present invention.

[0098] Referring to FIG. 7, a lighting device according to the present embodiment may include a diffusion cover (1010), a light-emitting element module (1020), and a body portion (1030). The body portion (1030) may accommodate the light-emitting element module (1020), and the diffusion cover (1010) may be placed on the body portion (1030) so as to cover the upper portion of the light-emitting element module (1020).

[0099] The body part (1030) is not limited as long as it can accommodate and support the light-emitting element module (1020) and supply electrical power to the light-emitting element module (1020). For example, as illustrated in FIG. 7, the body part (1030) may include a body case (1031), a power supply unit (1033), a power case (1035), and a power connection unit (1037).

[0100] The power supply unit (1033) is housed in a power case (1035) and is electrically connected to the light emitting element module (1020), and may include at least one IC chip. The IC chip may adjust, convert, or control the characteristics of power supplied to the light emitting element module (1020). The power case (1035) may house and support the power supply unit (1033), and the power case (1035) with the power supply unit (1033) fixed therein may be located inside the body case (1031). The power connection unit (115) may be arranged at the bottom of the power case (1035) and may be connected to the power case (1035). Accordingly, the power connection unit (1037) may be electrically connected to the power supply unit (1033) inside the power case (1035), and may serve as a passage through which external power may be supplied to the power supply unit (1033).

[0101] The light emitting element module (1020) may include a substrate (1023) and a light emitting element (1021) disposed on the substrate (1023). The light emitting element module (1020) may be provided on the upper portion of the body case (1031) and electrically connected to a power supply unit (1033).

[0102] The substrate (1023) is not limited to any substrate capable of supporting the light-emitting element (1021). For example, the substrate (1023) may be a printed circuit board including wiring. The substrate (1023) may have a shape corresponding to a fixing portion on the upper portion of the body case (1031) so that it can be stably fixed to the body case (1031). The light-emitting element (1021) may include at least one of the light-emitting elements (30) according to the embodiments of the present invention described above.

[0103] A diffusion cover (1010) is placed on a light-emitting element (1021), and may be fixed to a body case (1031) to cover the light-emitting element (1021). The diffusion cover (1010) may have a light-transmitting material, and the shape and light transmittance of the diffusion cover (1010) may be adjusted to control the directional characteristics of the lighting device. Accordingly, the diffusion cover (1010) may be transformed into various shapes depending on the purpose of use and application of the lighting device.

[0104] FIG. 8 is a cross-sectional view illustrating a display device using a semiconductor element (1) according to another embodiment of the present invention.

[0105] The display device of the present embodiment may include a display panel (2110), a backlight unit (not shown) that provides light to the display panel (2110), and a panel guide that supports the lower edge of the display panel (2110).

[0106] The display panel (2110) is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. A gate drive PCB that supplies a driving signal to the gate line may be further positioned at the edge of the display panel (2110). Here, the gate drive PCB may not be formed on a separate PCB, but may be formed on a thin film transistor substrate.

[0107] The backlight unit may include a light source module including at least one substrate and a plurality of light-emitting elements (2160). Furthermore, the backlight unit may further include a bottom cover (2180), a reflective sheet (2170), a diffusion plate (2131), and optical sheets (2130).

[0108] The bottom cover (2180) is opened upward and can accommodate a substrate, a light emitting element (2160), a reflective sheet (2170), a diffusion plate (2131), and optical sheets (2130). In addition, the bottom cover (2180) can be combined with a panel guide. The substrate can be positioned below the reflective sheet (2170) and surrounded by the reflective sheet (2170). However, the present invention is not limited thereto, and if a reflective material is coated on the surface, the substrate can be positioned on the reflective sheet (2170). In addition, the substrate can be formed in multiple forms and the multiple substrates can be arranged in a form in which the multiple substrates are arranged side by side, but the present invention is not limited thereto, and the substrate can be formed as a single substrate.

[0109] The light-emitting element (2160) may include a semiconductor element (1) according to the embodiments of the present invention described above. The light-emitting elements (2160) may be regularly arranged in a certain pattern on a substrate. In addition, a lens (2210) may be arranged on each light-emitting element (2160), thereby improving the uniformity of light emitted from the plurality of light-emitting elements (2160).

[0110] A diffusion plate (2131) and optical sheets (2130) may be positioned on a light-emitting element (2160). Light emitted from the light-emitting element (2160) may be supplied to the display panel (2110) in the form of a surface light source through the diffusion plate (2131) and optical sheets (2130).

[0111] In this way, the semiconductor device (1) according to embodiments of the present invention can be applied to a display device such as the present embodiment.

[0112] The composition and concentration distribution of the material of the semiconductor element (1) in FIGS. 2 to 6 can be analyzed using at least one of secondary ion mass spectrometry (SIMS) and atom probe tomography (APT). As an example, the distribution at the surface or a specific depth, doping concentration, and depth-direction component profiling for at least one of the Al content, the In content, and the Mg concentration in the semiconductor element (1) can be analyzed through SIMS analysis. As another example, the presence, distribution form, or concentration change of any one of Al, In, and Mg included in the structure of the semiconductor element (1) can be analyzed through APT analysis.

[0113] Although the embodiments of the present invention have been described as specific embodiments, these are merely examples, and the present invention is not limited thereto, but should be construed to have the broadest scope in accordance with the technical concepts disclosed in this specification. Those skilled in the art may combine / substitute the disclosed embodiments to implement patterns of shapes not specified, but this also does not depart from the scope of the present invention. In addition, those skilled in the art may easily modify or alter the disclosed embodiments based on this specification, and it is clear that such modifications or alterations also fall within the scope of the present invention.

Claims

1. First challenge type semiconductor layer; Second challenge type semiconductor layer; A quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and A hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, The Al content profile according to depth in the hole injection strengthening layer has an Al content peak, and the Mg concentration profile in the hole injection strengthening layer has a larger number of Mg concentration peaks than the Al content peaks. Semiconductor devices.

2. In paragraph 1, The Al content profile has a plurality of Al content peaks and one or more Al valleys, The plurality of Al content peaks includes a first Al peak having the maximum content among the plurality of Al content peaks, The difference between the content of the first Al peak and the content of the Al valley is 20% or more, Semiconductor devices.

3. In paragraph 2, The plurality of Al content peaks further include a second Al peak having a smaller content than the first Al peak among the plurality of Al content peaks and formed further above the first Al peak, The depth difference between the first Al peak and the Al valley is smaller than the depth difference between the second Al peak and the Al valley. Semiconductor devices.

4. In paragraph 2, The above first Al peak is positioned lower than the above Al valley, The above first Al peak is, Located below the center between the boundary of the quantum well luminescent layer and the hole injection enhanced layer and the Al valley, Semiconductor devices.

5. In paragraph 2, The above Al Valley is, Located below the center of the above hole injection strengthening layer, Semiconductor devices.

6. In paragraph 2, The above Mg concentration profile has a plurality of Mg concentration peaks and one or more Mg valleys, The multiple above Mg concentration peaks are, A first Mg peak having the maximum concentration value among the plurality of Mg concentration peaks; A second Mg peak formed above the first Mg peak; and A third Mg peak formed above the second Mg peak and having the minimum concentration value among the plurality of Mg concentration peaks, Semiconductor devices.

7. In paragraph 6, The above Al Valley is, Located between the first Mg peak and the second Mg peak, Semiconductor devices.

8. In paragraph 6, The above Al content profile includes the Al valley region, The above Mg concentration profile includes a Mg valley region formed to overlap at least partly with the Al valley region, The above Al valley is placed in the above Al valley area, In the above Mg Valley area, the above Mg Valley is placed, Semiconductor devices.

9. In paragraph 6, The above first Mg peak is located between the first Al peak and the Al valley. Semiconductor devices.

10. In paragraph 6, The depth difference between the first Mg peak and the first Al peak is greater than the depth difference between the first Mg peak and the Al valley. Semiconductor devices.

11. In paragraph 6, The depth difference between the first Mg peak and the second Mg peak is smaller than the depth difference between the second Mg peak and the third Mg peak. Semiconductor devices.

12. In paragraph 6, The depth difference between the Mg valley and the first Mg peak is greater than the depth difference between the Mg valley and the second Mg peak. Semiconductor devices.

13. First challenge type semiconductor layer; Second challenge type semiconductor layer; A quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and A hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, The Al content profile according to depth in the above hole injection strengthening layer has multiple Al content peaks, and the Mg concentration profile in the above hole injection strengthening layer has multiple Mg concentration peaks. The Al content peak located at the uppermost side among the plurality of Al content peaks is located closer to the quantum well luminescent layer than the Mg concentration peak located at the uppermost side among the plurality of Mg concentration peaks. Semiconductor devices.

14. In paragraph 13, The Al content profile has a plurality of Al content peaks and one or more Al valleys, The multiple Al content peaks are, It includes a first Al peak having the maximum content among the plurality of Al content peaks, A second Al peak having a smaller content than the first Al peak among the plurality of Al content peaks and positioned closer to the second conductive semiconductor layer than the first Al peak, Semiconductor devices.

15. In paragraph 14, The depth difference between the first Al peak and the Al valley is greater than the depth difference between the second Al peak and the Al valley. Semiconductor devices.

16. In paragraph 14, The above Mg concentration profile has a plurality of Mg concentration peaks and one or more Mg valleys, The multiple above Mg concentration peaks are, A first Mg peak having the maximum concentration value among the plurality of Mg concentration peaks; A second Mg peak formed above the first Mg peak; and A third Mg peak formed above the second Mg peak and having the minimum concentration value among the plurality of Mg concentration peaks, Semiconductor devices.

17. First challenge type semiconductor layer; Second challenge type semiconductor layer; A quantum well light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and A hole injection enhancement layer comprising Al and Mg and disposed between the quantum well light-emitting layer and the second conductive semiconductor layer, The above hole injection enhancement layer includes a first hole injection region and a second hole injection region, As the second hole injection region gets closer to the quantum well light-emitting layer, the Al content in the second hole injection region gradually increases. Semiconductor devices.

18. In paragraph 17, The above hole injection enhancement layer further includes a third hole injection region, In the third hole injection region, Al valleys and Mg valleys are arranged. Semiconductor devices.

19. In paragraph 17, The above hole injection enhancement layer further includes a fourth hole injection region, The difference between the maximum and minimum values ​​of the Al content in the fourth hole injection region is smaller than the difference between the maximum and minimum values ​​of the Al content in the third hole injection region. Semiconductor devices.

20. In paragraph 17, The above hole injection enhancement layer further includes a fifth hole injection region, The Al content and Mg concentration in the fifth hole injection region increase as they get closer to the second conductive semiconductor layer. Semiconductor devices.

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