Balun, radio frequency power amplifier, radio frequency front-end module and electronic device

Abstract

Provided in the present application are a balun, a radio frequency power amplifier, a radio frequency front-end module and an electronic device. A first balun of the radio frequency power amplifier is arranged in the same wiring layer, and the degree of coupling is increased by means of providing a plurality of primary lines or secondary lines, such that the balun can be arranged by using a substrate with fewer layers. In addition, both a primary portion and a secondary portion are arranged in groups, and each primary portion is individually grounded, which can reduce additional wiring connections and also ensures the implementation of the balun on a single wiring layer. Synchronously, a power source end is configured to be connected to both a first differential feed end and a second differential feed end, so as to ensure the better feed support of the radio frequency power amplifier after each primary portion has been individually grounded. The coordinated cooperation ensures the better implementation of the first balun in a single wiring layer, and also further ensures the performance of the radio frequency power amplifier.

Description

Balun, radio frequency power amplifier, radio frequency front-end module and electronic device

[0001] The present application is based on Chinese patent applications with application number 202410874197.5, filed on June 28, 2024, and titled "Radio frequency power amplifier, radio frequency front-end module and electronic device", with application number 202421529166.8, filed on June 28, 2024, and titled "Radio frequency power amplifier, radio frequency front-end module and electronic device", with application number 202410861997.3, filed on June 28, 2024, and titled "Balun, radio frequency power amplifier, radio frequency front-end module", and claims priority thereto. TECHNICAL FIELD

[0002] The present application relates to the field of radio frequency technology, and in particular to a balun, a radio frequency power amplifier, a radio frequency front-end module and an electronic device. BACKGROUND

[0003] The progress of communication technology has brought great development opportunities to the electronic device industry. In particular, in the field of mobile devices, users pay more and more attention to the portability and operation convenience of the devices, which promotes the continuous development of electronic devices towards high performance. Taking the radio frequency front-end module as an example, with the increasing popularity of 5G technology, it requires communication devices to be compatible with more frequency bands, at the same time, the increase of frequency also makes the radio frequency front-end module have higher requirements on performance indicators, and under the premise of meeting high integration, high performance indicators are also realized, which puts forward higher requirements on the design of radio frequency front-end. SUMMARY

[0004] The present application provides a radio frequency power amplifier, a radio frequency front-end module and an electronic device, which can better guarantee the realization of the performance of the radio frequency power amplifier and the radio frequency front-end module under the premise of high integration.

[0005] In a first aspect, the present application provides a radio frequency power amplifier, comprising:

[0006] a substrate;

[0007] a first chip disposed on the substrate, comprising a first differential output end, a second differential output end, a first differential feed end and a second differential feed end;

[0008] a first balun disposed on the same wiring layer of the substrate, comprising a primary part and a secondary part;

[0009] the primary part comprises a first group of primary lines and a second group of primary lines;

[0010] The secondary part comprises a first group of secondary lines, a second group of secondary lines and a secondary connecting line, the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines, and the second group of secondary lines is coupled with the second group of primary lines;

[0011] a power supply end arranged on the substrate, the first differential feeding end is connected to the power supply end, and the second differential feeding end is connected to the power supply end;

[0012] The first group of primary lines comprises at least two primary lines, the second group of primary lines comprises at least two primary lines, and / or the first group of secondary lines comprises at least two secondary lines, and the second group of secondary lines comprises at least two secondary lines;

[0013] One end of a primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded; one end of a primary line in the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded.

[0014] In a second aspect, the application provides a radio frequency power amplifier, comprising:

[0015] a substrate;

[0016] a first chip arranged on the substrate, comprising a first differential transistor, a second differential transistor, a first differential output end, a second differential output end, a first differential feeding end and a second differential feeding end, a first output end of the first differential transistor is connected to the first differential feeding end, and the first output end of the first differential transistor is connected to the first differential output end through a first series capacitor, a second output end of the second differential transistor is connected to the second differential feeding end, and the second output end of the second differential transistor is connected to the second differential output end through a second series capacitor;

[0017] a first balun arranged on the substrate, comprising a primary part and a secondary part;

[0018] The primary part comprises a first group of primary lines and a second group of primary lines, one end of the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded; one end of the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded;

[0019] The secondary part comprises a first group of secondary lines, a second group of secondary lines and a secondary connecting line, the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines and extends in the same direction, and the second group of secondary lines is coupled with the second group of primary lines and extends in the same direction.

[0020] a power supply end disposed on the substrate, the first differential feed end being connected to the power supply end, and the second differential feed end being connected to the power supply end.

[0021] In a third aspect, the present application provides a radio frequency power amplifier, comprising:

[0022] a substrate;

[0023] a first chip disposed on the substrate, comprising a first differential output end, a second differential output end, a first differential feed end, and a second differential feed end;

[0024] a first balun comprising a primary part and a secondary part;

[0025] a first end of the primary part being connected to the first differential output end through a first set of bonding wires, a second end of the primary part being connected to the second differential output end through a second set of bonding wires, the first differential feed end being connected to a power supply end through a third set of bonding wires, and the second differential feed end being connected to the power supply end through a fourth set of bonding wires;

[0026] the fourth set of bonding wires being disposed between the first set of bonding wires and the third set of bonding wires, and the third set of bonding wires being disposed between the second set of bonding wires and the fourth set of bonding wires.

[0027] Further, the second differential feed end is disposed between the first differential output end and the first differential feed end, and the first differential feed end is disposed between the second differential output end and the second differential feed end.

[0028] Further, the first balun is disposed on the substrate, or alternatively, the first balun is disposed in a second chip.

[0029] In a fourth aspect, the present application provides a radio frequency power amplifier, comprising:

[0030] a substrate provided with a first differential power supply end and a second differential power supply end;

[0031] a first chip disposed on the substrate, comprising a first differential output end, a second differential output end, a first differential feed end, and a second differential feed end;

[0032] a first balun disposed on the substrate, comprising a primary part and a secondary part, a first end of the primary part being connected to the first differential output end, and a second end of the primary part being connected to the second differential output end;

[0033] a first inductor, one end of the first inductor being connected to the first differential power supply end, the other end of the first inductor being connected to the first differential feeding end, the first inductor comprising a first sub-wire, the primary part comprising a first primary wire, the first sub-wire and the first primary wire being arranged on the same wiring layer of the substrate and being arranged adjacently, the transmission direction of the radio frequency signal of the first sub-wire being opposite to the transmission direction of the radio frequency signal of the first primary wire;

[0034] a second inductor, one end of the second inductor being connected to the second differential power supply end, the other end of the second inductor being connected to the second differential feeding end, the second inductor comprising a second sub-wire, the primary part comprising a second primary wire, the second sub-wire and the second primary wire being arranged on the same wiring layer of the substrate and being arranged adjacently, the transmission direction of the radio frequency signal of the second sub-wire being opposite to the transmission direction of the radio frequency signal of the second primary wire.

[0035] Further, the angle formed by the transmission direction of the radio frequency signal of the first sub-wire and the transmission direction of the radio frequency signal of the first primary wire is greater than 160 degrees, and the angle formed by the transmission direction of the radio frequency signal of the second sub-wire and the transmission direction of the radio frequency signal of the second primary wire is greater than 160 degrees.

[0036] In a fifth aspect, the present application provides a radio frequency power amplifier, comprising:

[0037] a substrate, provided with a first differential power supply end and a second differential power supply end;

[0038] a first chip, arranged on the substrate, comprising a first differential output end, a second differential output end, a first differential feeding end and a second differential feeding end;

[0039] a first balun, comprising a primary part and a secondary part, the first end of the primary part being connected to the first differential output end through a first connection path, the second end of the primary part being connected to the second differential output end through a second connection path;

[0040] a power supply end, arranged on the substrate, the first differential feeding end being connected to the power supply end through a third connection path, the second differential feeding end being connected to the power supply end through a fourth connection path;

[0041] the transmission direction of at least part of the radio frequency signal in the third connection path being opposite to the transmission direction of at least part of the radio frequency signal in the second connection path, or the transmission direction of at least part of the radio frequency signal in the third connection path being opposite to the transmission direction of at least part of the radio frequency signal in the first group of primary wires or the second group of primary wires;

[0042] The transmission direction of the radio frequency signal in the fourth connection path is opposite to the transmission direction of the radio frequency signal in the first connection path, or the transmission direction of the radio frequency signal in the fourth connection path is opposite to the transmission direction of the radio frequency signal in at least part of the first group of primary lines or the second group of primary lines.

[0043] In a sixth aspect, the present application provides a radio frequency power amplifier, comprising:

[0044] a substrate;

[0045] a first chip disposed on the substrate, comprising a first output end;

[0046] a first transformer disposed on the substrate, comprising a primary part and a secondary part, a first end of the primary part being connected to the first output end, and a second end of the primary part being configured to be grounded or connected to a power supply end;

[0047] a first inductor connected in a feeding path of the radio frequency power amplifier, the first inductor comprising a first sub-wire, the primary part comprising a first primary wire, the first sub-wire and the first primary wire being disposed on the same wiring layer of the substrate and adjacent to each other, and the transmission direction of the radio frequency signal of the first sub-wire being opposite to the transmission direction of the radio frequency signal of the first primary wire.

[0048] Further, the substrate further comprises a power supply end;

[0049] the first chip further comprises a first feeding end, one end of the first inductor being connected to the power supply end, and the other end of the first inductor being connected to the first feeding end.

[0050] Further, the transmission direction of the radio frequency signal of the first sub-wire and the transmission direction of the radio frequency signal of the first primary wire form an angle greater than 135 degrees.

[0051] Further, the primary part and the secondary part extend in the same direction.

[0052] Further, the first chip comprises a first amplification transistor, a third output end of the first amplification transistor being connected to the first feeding end of the first chip, and the third output end of the first amplification transistor being connected to the first output end.

[0053] In a seventh aspect, the present application provides a radio frequency power amplifier, comprising:

[0054] a substrate;

[0055] a first chip disposed on the substrate, comprising a first differential output end and a second differential output end;

[0056] a first balun including a primary part and a secondary part;

[0057] The primary part includes a first group of primary lines and a second group of primary lines, one end of the first group of primary lines is configured to be connected to the first differential output end, the other end is configured to be grounded, and a virtual connection formed by the one end of the first group of primary lines and the other end of the first group of primary lines extends in a first direction; one end of the second group of primary lines is configured to be connected to the second differential output end, the other end is configured to be grounded, and a virtual connection formed by the one end of the second group of primary lines and the other end of the second group of primary lines extends in a second direction;

[0058] The secondary part includes a first group of secondary lines and a second group of secondary lines, the first group of secondary lines and the second group of secondary lines are connected in series, the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0059] A virtual connection formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends in the first direction, and a virtual connection formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends in the second direction.

[0060] In an eighth aspect of the present application, a radio frequency front-end module is provided, including the radio frequency power amplifier.

[0061] In a ninth aspect of the present application, an electronic device is provided, including the radio frequency front-end module.

[0062] In the radio frequency power amplifier, the radio frequency front-end module and the electronic device provided in the embodiments of the present application, the first balun of the radio frequency power amplifier is arranged in the same wiring layer, and the splitting of the primary lines or the secondary lines is arranged to be coupled, the coupling degree is increased by arranging a plurality of primary lines or secondary lines, and the balun can be arranged with fewer layers of substrates. Furthermore, the primary part and the secondary part are arranged in groups, each primary part is separately grounded, unnecessary additional wiring connections are reduced, the realization of the balun in a separate wiring layer is ensured, and the power supply end is configured to be connected to the first differential feeding end and the second differential feeding end respectively to ensure better feeding support of the radio frequency power amplifier after each primary part is separately grounded. Through the above linkage, the performance of the radio frequency power amplifier is further ensured on the premise that the first balun can be better realized in a single wiring layer.

[0063] In a tenth aspect of the present application, a balun is provided, the balun includes:

[0064] The first coupling line comprises a first coupling part and a second coupling part, and the first coupling part extends in a direction intersecting with the direction in which the second coupling part extends;

[0065] The second coupling line comprises a third coupling part and a fourth coupling part, and the third coupling part extends in a direction intersecting with the direction in which the fourth coupling part extends;

[0066] The third coupling line comprises a fifth coupling part, a sixth coupling part and a seventh coupling part, the seventh coupling part comprises a first sub-coupling part connected to the fifth coupling part and a second sub-coupling part connected to the sixth coupling part, and the first sub-coupling part is connected to the second sub-coupling part; the fifth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends, and the sixth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends;

[0067] The first coupling part is coupled to the first sub-coupling part, and the second coupling part is coupled to the fifth coupling part; the third coupling part is coupled to the second sub-coupling part, and the fourth coupling part is coupled to the sixth coupling part.

[0068] In the eleventh aspect of the present application, a radio frequency chip is provided, and the radio frequency chip comprises the balun.

[0069] In the twelfth aspect of the present application, an integrated passive device is provided, and the integrated passive device comprises the balun.

[0070] In the thirteenth aspect of the present application, a radio frequency power amplifier is provided, and the radio frequency power amplifier comprises a power amplification circuit and the balun, and the power amplification circuit is connected to the balun.

[0071] In the fourteenth aspect of the present application, a radio frequency front-end module is provided, and the radio frequency front-end module comprises the balun.

[0072] In the fifteenth aspect of the present application, a radio frequency front-end module is provided, and the radio frequency front-end module comprises a substrate, a first chip and a second chip arranged on the substrate, the first chip is formed with a balun, the second chip is formed with a power amplification circuit, and the power amplification circuit is connected to the balun.

[0073] The balun comprises:

[0074] The first coupling line comprises a first coupling part and a second coupling part, and the first coupling part extends in a direction intersecting with the direction in which the second coupling part extends;

[0075] The second coupling line comprises a third coupling part and a fourth coupling part, and the third coupling part extends in a direction intersecting with the direction in which the fourth coupling part extends;

[0076] The third coupling line comprises a fifth coupling part, a sixth coupling part and a seventh coupling part, the seventh coupling part comprises a first sub-coupling part connected to the fifth coupling part and a second sub-coupling part connected to the sixth coupling part, and the first sub-coupling part is connected to the second sub-coupling part; the fifth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends, and the sixth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends;

[0077] The first coupling part is coupled to the first sub-coupling part, and the second coupling part is coupled to the fifth coupling part; the third coupling part is coupled to the second sub-coupling part, and the fourth coupling part is coupled to the sixth coupling part.

[0078] The first coupling line comprises a first coupling part and a second coupling part, the first coupling part extends in a direction intersecting with the direction in which the second coupling part extends; the second coupling line comprises a third coupling part and a fourth coupling part, the third coupling part extends in a direction intersecting with the direction in which the fourth coupling part extends; the third coupling line comprises a fifth coupling part, a sixth coupling part and a seventh coupling part, the seventh coupling part comprises a first sub-coupling part connected to the fifth coupling part and a second sub-coupling part connected to the sixth coupling part, and the first sub-coupling part is connected to the second sub-coupling part; the fifth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends, and the sixth coupling part extends in a direction intersecting with the direction in which the seventh coupling part extends; the first coupling part is coupled to the first sub-coupling part, and the second coupling part is coupled to the fifth coupling part; the third coupling part is coupled to the second sub-coupling part, and the fourth coupling part is coupled to the sixth coupling part. The first coupling line and the second coupling line are not connected, which can improve the amplitude-phase balance and the common-mode rejection ratio of the balun; the first coupling line, the second coupling line and the third coupling line are respectively divided into multiple segments, which can reduce the electromagnetic interference between the first coupling line and the second coupling line, increase the part of the third coupling line participating in coupling, thereby reducing the parasitic inductance of the third coupling line, reducing the impedance deviation and loss caused by the parasitic inductance, and improving the performance of the balun. BRIEF DESCRIPTION OF DRAWINGS

[0079] FIG. 1 is a schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0080] FIG. 2 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0081] FIG. 3 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0082] FIG. 4 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0083] FIG. 5 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0084] FIG. 6 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0085] FIG. 7 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0086] FIG. 8 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0087] FIG. 9 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0088] FIG. 10 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0089] FIG. 11 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0090] FIG. 12 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0091] FIG. 13 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0092] FIG. 14 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0093] FIG. 15 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0094] FIG. 16 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0095] FIG. 17 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0096] FIG. 18 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0097] FIG. 19 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0098] FIG. 20 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0099] FIG. 21 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0100] FIG. 22 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0101] FIG. 23 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0102] FIG. 24 is another schematic diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0103] FIG. 25 is a schematic diagram of a structure of a balun according to an embodiment of the present application;

[0104] FIGS. 26a-26f are schematic diagrams of structures of baluns according to some embodiments of the present application;

[0105] FIG. 27 is a schematic diagram of a circuit structure of a balun according to the related art;

[0106] FIG. 28 is a schematic diagram of a structure of a balun according to other embodiments of the present application;

[0107] FIG. 29 is a schematic diagram of a circuit principle of the balun of FIG. 28;

[0108] FIG. 30 is a schematic block diagram of a radio frequency front-end module according to some embodiments of the present application;

[0109] FIG. 31 is a schematic block diagram of a radio frequency chip according to an embodiment of the present application;

[0110] FIG. 32 is a schematic block diagram of an integrated passive device according to an embodiment of the present application;

[0111] FIG. 33 is a schematic block diagram of a radio frequency power amplifier according to an embodiment of the present application;

[0112] FIG. 34 is a schematic block diagram of a radio frequency front-end module according to an embodiment of the present application;

[0113] FIG. 35 is a schematic block diagram of a radio frequency front-end module according to another embodiment of the present application. DETAILED DESCRIPTION

[0114] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of the present application.

[0115] It is to be understood that the application can assume various alternative embodiments, and that no limitation of the scope of the present application is intended by the description or illustration of the embodiments. Further, it should be understood that the description and drawings are illustrative of only the preferred embodiments and are not intended to be limiting. In the drawings, the size and relative sizes of layers and regions can be exaggerated for clarity. Identical reference numerals designate corresponding elements throughout the specification.

[0116] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. It will also be understood that, when a term is used in the singular, it can also be used in the plural, and vice versa, unless the context clearly dictates otherwise.

[0117] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0118] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0119] For a thorough understanding of the application, reference will be made to the following detailed description, in conjunction with the accompanying drawings, in which:

[0120] The radio frequency power amplifier and the radio frequency front end related in the application can be applied to various communication terminals, and can be applied to mobile terminals, IOT devices, wearable devices, tablet computers, vehicle terminals, etc. The radio frequency power amplifier and the radio frequency front end related in the application can be applied to different communication technologies, and can be applied to 2G, 3G, 4G, 5G, WiFi, etc. Communication technologies.

[0121] At least one embodiment of the application provides a radio frequency power amplifier, comprising:

[0122] a substrate;

[0123] a first chip disposed on the substrate, comprising a first differential output end, a second differential output end, a first differential feed end and a second differential feed end;

[0124] a first balun disposed on the same wiring layer of the substrate, comprising a primary part and a secondary part;

[0125] The primary part comprises a first group of primary lines and a second group of primary lines;

[0126] The secondary part comprises a first group of secondary lines, a second group of secondary lines and a secondary connection line, the secondary connection line being connected in series between the first group of secondary lines and the second group of secondary lines; the first group of secondary lines is coupled with the first group of primary lines, and the second group of secondary lines is coupled with the second group of primary lines;

[0127] a power supply end disposed on the substrate, the first differential feed end being connected to the power supply end, and the second differential feed end being connected to the power supply end;

[0128] The first group of primary lines includes at least two primary lines, the second group of primary lines includes at least two primary lines, and / or the first group of secondary lines includes at least two secondary lines, and the second group of secondary lines includes at least two secondary lines.

[0129] One end of a primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded; one end of a primary line in the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded.

[0130] In the example of FIG. 1, the substrate 10 is provided with a first chip 20 and a first balun 30. The first chip 20 is arranged on the substrate and includes a first differential output end 21, a second differential output end 22, a first differential feed end, and a second differential feed end. Optionally, the first chip can be arranged on the substrate 10 in a flip-chip manner, or the first chip can be arranged on the substrate 10 in a wire-bonding manner. The first differential output end 21 and the second differential output end 22 are respectively two output ends of a differential radio frequency signal. Exemplarily, a front-stage radio frequency signal is converted to form two differential radio frequency signals, and the two differential radio frequency signals are respectively amplified by one or more than two stages of amplifying transistors and then output via the first differential output end 21 and the second differential output end 22. The first differential feed end and the second differential feed end are respectively configured to receive corresponding power supply signals to supply power to the amplifying transistors. The first differential feed end is configured to receive a corresponding power supply signal to supply power to the corresponding amplifying transistor in the first differential path. The second differential feed end is configured to receive a corresponding power supply signal to supply power to the corresponding amplifying transistor in the second differential path. Understandably, the power supply signals received by the first differential feed end and the second differential feed end can be the same or different. That is, the first differential feed end and the second differential feed end can be connected to the same power supply end or different power supply ends.

[0131] In the example, the first balun 30 is arranged on the same wiring layer of the substrate 10. The first balun 30 includes a primary part and a secondary part. The primary part includes a first group of primary lines 311 and a second group of primary lines 312. The first group of primary lines includes at least one primary line, and one end of a primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded. Understandably, if the first group of primary lines includes more than two primary lines, one end of each primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded. Exemplarily, in the example corresponding to FIG. 1, the first group of primary lines includes one primary line, and in the example corresponding to FIG. 2, the first group of primary lines includes two primary lines. Understandably, the number of primary lines in the first group of primary lines can be more, which is not limited here.

[0132] In at least one embodiment, the connection between the first differential output and one end of the primary line in the first group of primary lines can be in various ways. Optionally, the one end of the primary line in the first group of primary lines is connected to the first differential output by a bonding wire (wire bonding), or the first differential output is connected to the one end of the primary line in the first group of primary lines by a conductive bump. Further, the first differential output can be connected to a third point first, and the third point is connected to the one end of the primary line in the first group of primary lines. For example, the first differential output is connected to a node on the substrate by a conductive bump, and the node is connected to the one end of the primary line in the first group of primary lines (the connection can be achieved by a bonding wire or a wiring pattern on the substrate). Or, the first differential output is connected to a node on the substrate by a bonding wire, and the node is connected to the one end of the primary line in the first group of primary lines (the connection can be achieved by a bonding wire or a wiring pattern on the substrate). It can be understood that the primary line in the first group of primary lines can be a straight line, a curved line, an arcuate line, or a broken line with any bending shape, etc.

[0133] The second group of primary lines includes at least one primary line, one end of the primary line in the second group of primary lines is configured to be connected to the second differential output, and the other end is configured to be grounded. It can be understood that if the second group of primary lines includes more than two primary lines, one end of each primary line in the second group of primary lines is configured to be connected to the second differential output, and the other end is configured to be grounded. For example, in the embodiment corresponding to FIG. 1, the second group of primary lines includes one primary line, and in the embodiment corresponding to FIG. 2, the second group of primary lines includes two primary lines. It can be understood that the number of primary lines in the second group of primary lines can be more, which is not limited herein. It can be understood that the primary line in the second group of primary lines 312 can be a straight line, a curved line, an arcuate line, or a broken line with any bending shape, etc.

[0134] In at least one embodiment, the connection of one end of the primary lines in the second group of primary lines and the second differential output terminal can be in various manners. Optionally, one end of the primary lines in the second group of primary lines is connected to the second differential output terminal by a bonding wire, or the second differential output terminal is connected to one end of the primary lines in the second group of primary lines by a conductive bump. Further, the second differential output terminal can be connected to a third point first, and the third point is connected to one end of the primary lines in the second group of primary lines. For example, the second differential output terminal is connected to a node on a substrate by a conductive bump, and the node is connected to one end of the primary lines in the second group of primary lines (the connection can be achieved by a bonding wire or a wiring pattern on the substrate). Or, the second differential output terminal is connected to a node on a substrate by a bonding wire, and the node is connected to one end of the primary lines in the second group of primary lines (the connection can be achieved by a bonding wire or a wiring pattern on the substrate).

[0135] The secondary part includes a first group of secondary lines 321, a second group of secondary lines 322, and a secondary connection line 323 connected in series between the first group of secondary lines 321 and the second group of secondary lines 322; the first group of secondary lines 321 is coupled to the first group of primary lines 311, and the second group of secondary lines 322 is coupled to the second group of primary lines 312. Understandably, the secondary lines in the first group of secondary lines 321 can be straight lines, curved lines, arc-shaped lines, or broken lines with any bending shape, etc. Understandably, the secondary lines in the second group of secondary lines 322 can be straight lines, curved lines, arc-shaped lines, or broken lines with any bending shape, etc.

[0136] In at least one embodiment, a first end of the first group of secondary lines 321 is configured to be connected to a signal output terminal, a second end of the first group of secondary lines 321 is connected to a first end of the secondary connection line 323, a second end of the secondary connection line 323 is connected to a first end of the second group of secondary lines 322, and a second end of the second group of secondary lines 322 is configured to be grounded.

[0137] In at least one embodiment, a first end of the first group of secondary lines 321 is configured to be connected to a signal output terminal, a second end of the first group of secondary lines 321 is connected to a first end of the secondary connection line 323, a second end of the secondary connection line 323 is connected to a first end of the second group of secondary lines 322, and a second end of the second group of secondary lines 322 is configured to be grounded.

[0138] In at least one embodiment, the first set of secondary lines 321 extends in the same direction as the first set of primary lines 311, and the second set of secondary lines 322 extends in the same direction as the second set of primary lines 312. As shown in FIG. 1 and FIG. 2, extending the first set of secondary lines 321 in the same direction as the first set of primary lines 311, and extending the second set of secondary lines 322 in the same direction as the second set of primary lines 312, can reduce the bending of the balun traces, and reduce the insertion loss of the RF signal transmission.

[0139] In at least one embodiment, the first set of secondary lines 321 extends in a first direction, and the second set of secondary lines 322 extends in a second direction. Optionally, the first direction is parallel to the second direction. Optionally, the first direction is opposite to the second direction.

[0140] Optionally, the first direction intersects the second direction. In at least one embodiment, as shown in FIG. 3, the first direction and the second direction form an angle greater than or equal to 0 degree and less than 60 degrees. In at least one embodiment, as shown in FIG. 3, the first direction and the second direction form an angle greater than 0 degree and less than 45 degrees.

[0141] In at least one embodiment, the RF power amplifier further comprises a third chip, and at least a part of the third chip is located on a side of the virtual straight line towards the first chip, the virtual straight line being a line connecting another end of the first set of primary lines configured to be grounded and another end of the second set of primary lines configured to be grounded.

[0142] As shown in FIG. 12, a third chip 70 is disposed on the substrate 10, and at least a part of the third chip 70 is located on a side of the virtual straight line a towards the first chip. In at least one embodiment, the first direction is parallel to the second direction. In at least one embodiment, the first direction and the second direction form an angle greater than or equal to 0 degree and less than or equal to 60 degrees.

[0143] In at least one embodiment, the third chip comprises a RF switch circuit. The first end of the first set of secondary lines or the first end of the second set of secondary lines is connected to the RF switch circuit in the third chip. The first end of the first set of secondary lines or the first end of the second set of secondary lines can be connected to the RF switch circuit through a wiring pattern on the substrate, or the first end of the first set of secondary lines or the first end of the second set of secondary lines can be connected to the RF switch circuit through a bonding wire.

[0144] In at least one embodiment, the third chip comprises a radio frequency switch circuit. The signal output end is connected to the radio frequency switch circuit in the third chip. Wherein, the signal output end can be connected to the radio frequency switch circuit through a wiring pattern on the substrate, or the signal output end can be connected to the radio frequency switch circuit through a bonding wire.

[0145] In the embodiment, by arranging the third chip, and at least part of the third chip is located on the side of the virtual straight line a towards the first chip, the space on the substrate is fully utilized, and the integration of the overall power amplifier is improved. Further, there is an electrical connection between the first balun and the third chip, and such arrangement also facilitates wiring, avoiding the loss or interference caused by additional wiring.

[0146] The first group of secondary lines 321 comprises at least one secondary line. One end of the secondary line in the first group of secondary lines 321 is connected to one end of the secondary connection line 323, and the other end of the secondary line in the first group of secondary lines 321 is configured to be grounded. It can be understood that if the first group of secondary lines 321 comprises more than two secondary lines, one end of each secondary line in the first group of secondary lines 321 is connected to one end of the secondary connection line 323, and the other end is configured to be grounded. For example, in the embodiment corresponding to FIG. 1, the first group of secondary lines 321 comprises one secondary line. In the embodiment corresponding to FIG. 2, the first group of secondary lines 321 comprises two secondary lines. It can be understood that the number of secondary lines in the first group of secondary lines can also be more (more than three), which is not limited here.

[0147] The second group of secondary lines 322 comprises at least one secondary line. One end of the secondary line in the second group of secondary lines 322 is connected to the other end of the secondary connection line 323, and the other end of the secondary line in the second group of secondary lines 322 is configured to be connected to the signal output end. It can be understood that if the second group of secondary lines 322 comprises more than two secondary lines, one end of each secondary line in the second group of secondary lines 322 is connected to the other end of the secondary connection line 323, and the other end of the secondary line in the second group of secondary lines 322 is configured to be connected to the signal output end. For example, in the embodiment corresponding to FIG. 1, the second group of secondary lines 322 comprises one secondary line. In the embodiment corresponding to FIG. 2, the second group of secondary lines 322 comprises two secondary lines. It can be understood that the number of secondary lines in the second group of secondary lines 322 can also be more (more than three), which is not limited here.

[0148] The radio frequency power amplifier in the embodiment further comprises a power supply end (not shown in FIG. 1 and FIG. 2) disposed on the substrate 10, the first differential feeding end is connected to the power supply end, and the second differential feeding end is connected to the power supply end. In at least one embodiment, the first differential feeding end and the second differential feeding end can be connected to the same power supply end. In at least one embodiment, the first differential feeding end and the second differential feeding end are respectively connected to different power supply ends.

[0149] In the embodiment, by disposing the first balun of the radio frequency power amplifier in the same wiring layer, and disposing the first group of primary lines to include at least two primary lines, the second group of primary lines to include at least two primary lines, and / or the first group of secondary lines to include at least two secondary lines, and the second group of secondary lines to include at least two secondary lines, and by increasing the coupling degree through the plurality of primary lines or secondary lines, the balun can be implemented with fewer layers of substrate. Moreover, the primary part and the secondary part are both grouped and disposed, each primary part is individually grounded, which can reduce unnecessary additional wiring connection and ensure the implementation of the balun in a single wiring layer. At the same time, the power supply end is configured to be connected to the first differential feeding end and the second differential feeding end respectively, so as to ensure better feeding support of the radio frequency power amplifier after each primary part is individually grounded. Through the above linkage, the performance of the radio frequency power amplifier is further ensured on the premise that the first balun can be better implemented in a single wiring layer.

[0150] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0151] a substrate;

[0152] a first chip disposed on the substrate, comprising a first differential output end, a second differential output end, a first differential feeding end and a second differential feeding end;

[0153] a first balun comprising a primary part and a secondary part;

[0154] the primary part comprises a first group of primary lines and a second group of primary lines;

[0155] the secondary part comprises a first group of secondary lines, a second group of secondary lines and a secondary connection line, the secondary connection line is connected in series to the first group of secondary lines and the second group of secondary lines; the first group of secondary lines is coupled to the first group of primary lines, and the second group of secondary lines is coupled to the second group of primary lines;

[0156] a power supply end disposed on the substrate, the first differential feeding end is connected to the power supply end, and the second differential feeding end is connected to the power supply end;

[0157] The first group of primary lines includes at least two primary lines, the second group of primary lines includes at least two primary lines, and / or the first group of secondary lines includes at least two secondary lines, and the second group of secondary lines includes at least two secondary lines.

[0158] One end of a primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded; one end of a primary line in the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded.

[0159] In this embodiment, the first balun can be provided in the first chip, or the first balun is provided in a chip different from the first chip, or the first balun is provided on the substrate. It can be understood that the specific structure of the first balun can be realized by the structure described in any embodiment or embodiment of the present application.

[0160] In at least one embodiment, one end of a primary line in the first group of primary lines is connected to the first differential output end through a first group of bonding wires, one end of a primary line in the second group of primary lines is connected to the second differential output end through a second group of bonding wires, the first differential feed end is connected to the power supply end through a third group of bonding wires, and the second differential feed end is connected to the power supply end through a fourth group of bonding wires.

[0161] The fourth group of bonding wires is arranged between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is arranged between the second group of bonding wires and the fourth group of bonding wires.

[0162] As shown in FIG. 4, taking the first group of primary lines and the second group of primary lines each including 2 primary lines as an example, one end of a primary line in the first group of primary lines is connected to the first differential output end 21 through a first group of bonding wires 41, one end of a primary line in the second group of primary lines is connected to the second differential output end 22 through a second group of bonding wires 42, the first differential feed end 23 is connected to the power supply end through a third group of bonding wires 43, and the second differential feed end 24 is connected to the power supply end through a fourth group of bonding wires 44.

[0163] The first group of bonding wires 41 has at least one wire. In at least one embodiment, the first group of bonding wires 41 has at least two wires. In at least one embodiment, the first group of bonding wires 41 has 4-8 wires. In at least one embodiment, the first group of bonding wires can be connected to at least some of the primary wires in the first group of primary wires. For example, the first group of bonding wires can be directly connected to only one of the primary wires in the first group of primary wires, and the other ends of the primary wires in the first group of primary wires are connected to each other to be connected to the first differential output terminal 21. Alternatively, the first group of bonding wires can be directly connected to only some of the primary wires in the first group of primary wires, and the other ends of the remaining / all of the primary wires in the first group of primary wires are connected to each other to be connected to the first differential output terminal 21.

[0164] The second group of bonding wires 42 has at least one wire. In at least one embodiment, the second group of bonding wires 42 has at least two wires. In at least one embodiment, the second group of bonding wires 42 has 4-8 wires. In at least one embodiment, the second group of bonding wires 42 can be connected to at least some of the primary wires in the second group of primary wires. For example, the second group of bonding wires 42 can be directly connected to only one of the primary wires in the second group of primary wires, and the other ends of the primary wires in the second group of primary wires are connected to each other to be connected to the second differential output terminal 22. Alternatively, the second group of bonding wires 42 can be directly connected to only some of the primary wires in the second group of primary wires, and the other ends of the remaining / all of the primary wires in the second group of primary wires are connected to each other to be connected to the first differential output terminal 21.

[0165] The third group of bonding wires 43 has at least one wire. In at least one embodiment, the third group of bonding wires 43 has at least two wires. The first differential feed terminal is connected to the power terminal through the third group of bonding wires. Understandably, the first differential feed terminal and the power terminal can be directly connected through the third group of bonding wires, or can be collectively connected through the third group of bonding wires in combination with other connection modes. In at least one embodiment, one end of the third group of bonding wires 43 is connected to the first differential feed terminal, and the other end of the third group of bonding wires 43 is connected to the power terminal. In at least one embodiment, one end of the third group of bonding wires 43 is connected to the first differential feed terminal, and the other end of the third group of bonding wires 43 is connected to a first pad on the substrate, and the first pad is connected to the power terminal. In this case, the first pad can be connected to the power terminal through the wiring pattern of the substrate, or the first pad can be connected to the power terminal through an additional bonding wire.

[0166] The fourth group of bonding wires 44 has at least one number. In at least one embodiment, the fourth group of bonding wires 44 has at least two numbers. The second differential feed end is connected to the power supply end through the fourth group of bonding wires. It is understood that the connection between the second differential feed end and the power supply end can be directly achieved through the fourth group of bonding wires, or can be collectively achieved by the fourth group of bonding wires in combination with other connection modes. In at least one embodiment, one end of the fourth group of bonding wires 44 is connected to the second differential feed end, and the other end of the fourth group of bonding wires 44 is connected to the power supply end. In at least one embodiment, one end of the fourth group of bonding wires 44 is connected to the second differential feed end, and the other end of the fourth group of bonding wires 44 is connected to a second pad on the substrate, and the second pad is connected to the power supply end. The second pad can be connected to the power supply end through the wiring pattern of the substrate, or the second pad can be connected to the power supply end through additional bonding wires.

[0167] The fourth group of bonding wires 44 is arranged between the first group of bonding wires 41 and the third group of bonding wires 43, and the third group of bonding wires 43 is arranged between the second group of bonding wires 42 and the fourth group of bonding wires 44. The fourth group of bonding wires 44 is arranged adjacent to at least part of the first group of bonding wires 41. Since the first group of bonding wires 41 connects the first differential output end and the first group of primary lines, and the fourth group of bonding wires 44 connects the second differential feed end and the power supply end, the transmission direction of the radio frequency signal of the fourth group of bonding wires 44 is different from that of the first group of bonding wires 41. Therefore, the fourth group of bonding wires 44 can reduce the equivalent parasitic inductance of the first group of bonding wires 41, and can optimize the performance of the radio frequency power amplifier as a whole.

[0168] The third group of bonding wires 43 is arranged adjacent to at least part of the second group of bonding wires 42. Since the second group of bonding wires 42 connects the second differential output end and the second group of primary lines, and the third group of bonding wires 43 connects the second differential feed end and the power supply end, the transmission direction of the radio frequency signal of the third group of bonding wires 43 is different from that of the second group of bonding wires 42. Therefore, the third group of bonding wires 43 can reduce the equivalent parasitic inductance of the second group of bonding wires 42, and can optimize the performance of the radio frequency power amplifier as a whole.

[0169] In at least one embodiment, one end of the primary line in the first group of primary lines is connected to the first differential output end through the first group of bonding wires, one end of the primary line in the second group of primary lines is connected to the second differential output end through the second group of bonding wires, the first differential feed end is connected to the power supply end through the third group of bonding wires, and the second differential feed end is connected to the power supply end through the fourth group of bonding wires.

[0170] The second differential feed end is arranged between the first differential output end and the first differential feed end, and the first differential feed end is arranged between the second differential output end and the second differential feed end.

[0171] As shown in FIG. 4, the second differential feed end 24 is arranged between the first differential output end 21 and the first differential feed end 23, and the first differential feed end 23 is arranged between the second differential output end 22 and the second differential feed end 24. Through the above arrangement, the connection line between the first differential feed end 23 and the power supply end is arranged adjacent to the second group of bonding wires 42, and the transmission direction of the radio frequency signal of the connection line between the first differential feed end 23 and the power supply end is different from that of the second group of bonding wires 42, which can reduce the equivalent parasitic inductance of the second group of bonding wires 42 and optimize the performance of the radio frequency power amplifier as a whole. Through the above arrangement, the connection line between the second differential feed end 24 and the power supply end is arranged adjacent to the first group of bonding wires 41, and the transmission direction of the radio frequency signal of the connection line between the second differential feed end 24 and the power supply end is different from that of the first group of bonding wires 41, which can reduce the equivalent parasitic inductance of the first group of bonding wires 41 and optimize the performance of the radio frequency power amplifier as a whole.

[0172] In at least one embodiment, as shown in FIG. 13, the first chip includes a first differential transistor 25 and a second differential transistor 26, the first output end of the first differential transistor 25 is connected with the first feed end 23, and the second output end of the second differential transistor 26 is connected with the second feed end 24.

[0173] In at least one embodiment, the radio frequency power amplifier further includes a first inductor connected between the first differential feed end and the power supply end, and a second inductor connected between the second differential feed end and the power supply end.

[0174] The first inductor includes a first partial trace arranged on the same wiring layer of the substrate as the first balun, and the transmission direction of the radio frequency signal of at least part of the first partial trace is opposite to that of the first group of primary lines, or the transmission direction of the radio frequency signal of at least part of the first partial trace is opposite to that of the second group of primary lines.

[0175] The second inductor includes a second partial trace arranged on the same wiring layer of the substrate as the first balun, and the transmission direction of the radio frequency signal of at least part of the second partial trace is opposite to that of the second group of primary lines, or the transmission direction of the radio frequency signal of at least part of the second partial trace is opposite to that of the first group of primary lines.

[0176] In the embodiment, as shown in FIGS. 5-7, the radio frequency power amplifier further comprises a first inductor 51 connected between the first differential feed end and the power supply end, and a second inductor 52 connected between the second differential feed end and the power supply end.

[0177] The first inductor comprises a first partial trace arranged on the same wiring layer of the substrate as the first balun. As shown in FIGS. 5 and 6, the first inductor comprises a first partial trace arranged on the same wiring layer of the substrate as the first balun, and the radio frequency signal transmission direction of at least part of the first partial trace is opposite to the radio frequency signal transmission direction of the second group of primary lines, which can reduce the equivalent parasitic inductance of the second group of primary lines and achieve performance optimization of the radio frequency power amplifier as a whole.

[0178] As shown in FIG. 7, the first inductor comprises a first partial trace arranged on the same wiring layer of the substrate as the first balun, and the radio frequency signal transmission direction of at least part of the first partial trace is opposite to the radio frequency signal transmission direction of the first group of primary lines, which can reduce the equivalent parasitic inductance of the first group of primary lines and achieve performance optimization of the radio frequency power amplifier as a whole. In at least one embodiment, the first partial trace 511 is the trace closest to the first group of primary lines on the same wiring layer of the substrate as the first inductor and the first balun.

[0179] It can be understood that the radio frequency signal transmission direction of at least part of the first partial trace is opposite to the radio frequency signal transmission direction of the first group of primary lines, and it is not strictly required that the two transmission directions form a strict 180-degree reversal. In at least one embodiment, the radio frequency signal transmission direction of at least part of the first partial trace forms an angle greater than 90 degrees with the radio frequency signal transmission direction of the first group of primary lines. In at least one embodiment, the radio frequency signal transmission direction of at least part of the first partial trace forms an angle greater than 135 degrees with the radio frequency signal transmission direction of the first group of primary lines. In at least one embodiment, the radio frequency signal transmission direction of at least part of the first partial trace forms an angle greater than 160 degrees with the radio frequency signal transmission direction of the first group of primary lines. In at least one embodiment, the radio frequency signal transmission direction of at least part of the first partial trace forms an angle of 180 degrees with the radio frequency signal transmission direction of the first group of primary lines.

[0180] The second inductor includes second partial traces on the same wiring layer of the substrate as the first balun. As shown in FIG. 5 and FIG. 6, the second inductor includes second partial traces 521 on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least some of the second partial traces is opposite to the RF signal transmission direction of the first set of primary lines, which can reduce the equivalent parasitic inductance of the first set of primary lines, and can achieve performance optimization of the overall RF power amplifier.

[0181] The second inductor includes second partial traces on the same wiring layer of the substrate as the first balun. As shown in FIG. 5 and FIG. 6, the second inductor includes second partial traces 521 on the same wiring layer of the substrate as the first balun, and the RF signal transmission direction of at least some of the second partial traces is opposite to the RF signal transmission direction of the first set of primary lines, which can reduce the equivalent parasitic inductance of the first set of primary lines, and can achieve performance optimization of the overall RF power amplifier.

[0182] It can be understood that the RF signal transmission direction of at least some of the second partial traces is opposite to the RF signal transmission direction of the second set of primary lines, and it is not strictly required that the two transmission directions form a strict 180-degree reversal. In at least one embodiment, the RF signal transmission direction of at least some of the second partial traces forms an angle greater than 90 degrees with the RF signal transmission direction of the second set of primary lines. In at least one embodiment, the RF signal transmission direction of at least some of the second partial traces 521 forms an angle greater than 135 degrees with the RF signal transmission direction of the second set of primary lines. In at least one embodiment, the RF signal transmission direction of at least some of the second partial traces forms an angle greater than 160 degrees with the RF signal transmission direction of the second set of primary lines. In at least one embodiment, the RF signal transmission direction of at least some of the second partial traces forms an angle of 180 degrees with the RF signal transmission direction of the second set of primary lines.

[0183] In at least one embodiment, the power supply end includes a first differential power supply end and a second differential power supply end, the first differential power supply end is arranged on the side of the first set of primary lines away from the second set of primary lines, and the second differential power supply end is arranged on the side of the second set of primary lines away from the first set of primary lines.

[0184] The first partial traces include a first sub-line adjacent to the first set of primary lines relative to other parts, and the RF signal transmission direction of the first sub-line is opposite to the RF signal transmission direction of the first set of primary lines.

[0185] The second part of the traces includes a second sub-trace adjacent to the second set of primary lines relative to other parts, and a radio frequency signal transmission direction of the second sub-trace is opposite to a radio frequency signal transmission direction of the second set of primary lines.

[0186] As shown in FIG. 7, the power supply end includes a first differential power supply end 61 and a second differential power supply end 62. The first differential power supply end 61 is arranged on a side of the first set of primary lines away from the second set of primary lines, and the second differential power supply end 62 is arranged on a side of the second set of primary lines away from the first set of primary lines.

[0187] The first part of the traces includes a first sub-trace 511 adjacent to the first set of primary lines relative to other parts, and a radio frequency signal transmission direction of the first sub-trace 511 is opposite to a radio frequency signal transmission direction of the first set of primary lines.

[0188] In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the first sub-trace 511 and the radio frequency signal transmission direction of the first set of primary lines is greater than 90 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the first sub-trace 511 and the radio frequency signal transmission direction of the first set of primary lines is greater than 135 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the first sub-trace 511 and the radio frequency signal transmission direction of the first set of primary lines is greater than 160 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the first sub-trace 511 and the radio frequency signal transmission direction of the first set of primary lines is 180 degrees.

[0189] The second part of the traces includes a second sub-trace 521 adjacent to the second set of primary lines relative to other parts, and a radio frequency signal transmission direction of the second sub-trace 521 is opposite to a radio frequency signal transmission direction of the second set of primary lines.

[0190] In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the second sub-trace 521 and the radio frequency signal transmission direction of the second set of primary lines is greater than 90 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the second sub-trace 521 and the radio frequency signal transmission direction of the second set of primary lines is greater than 135 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the second sub-trace 521 and the radio frequency signal transmission direction of the second set of primary lines is greater than 160 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of the second sub-trace 521 and the radio frequency signal transmission direction of the second set of primary lines is 180 degrees.

[0191] In at least one embodiment, the power terminal is disposed between the first set of primary lines and the second set of primary lines, the first portion of traces is disposed between the second set of primary lines and the second portion of traces, a radio frequency signal transmission direction of at least some of the first portion of traces is opposite to a radio frequency signal transmission direction of the second set of primary lines, the second portion of traces is disposed between the first set of primary lines and the first portion of traces, a radio frequency signal transmission direction of at least some of the second portion of traces is opposite to a radio frequency signal transmission direction of the first set of primary lines.

[0192] As shown in FIG. 5 and FIG. 6, the power terminal is disposed between the first set of primary lines and the second set of primary lines. It can be understood that the two differential paths of the radio frequency power amplifier can be powered by one power terminal (as shown in FIG. 5) or powered by two power terminals respectively (as shown in FIG. 6).

[0193] The first portion of traces is disposed between the second set of primary lines and the second portion of traces, a radio frequency signal transmission direction of at least some of the first portion of traces 531 is opposite to a radio frequency signal transmission direction of the second set of primary lines.

[0194] In at least one embodiment, an angle formed by the radio frequency signal transmission direction of at least some of the first portion of traces 531 and the radio frequency signal transmission direction of the second set of primary lines is greater than 90 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of at least some of the first portion of traces 531 and the radio frequency signal transmission direction of the second set of primary lines is greater than 135 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of at least some of the first portion of traces 531 and the radio frequency signal transmission direction of the second set of primary lines is greater than 160 degrees. In at least one embodiment, an angle formed by the radio frequency signal transmission direction of at least some of the first portion of traces 531 and the radio frequency signal transmission direction of the second set of primary lines is 180 degrees.

[0195] The second portion of traces is disposed between the first set of primary lines and the first portion of traces, a radio frequency signal transmission direction of at least some of the second portion of traces 541 is opposite to a radio frequency signal transmission direction of the first set of primary lines.

[0196] In at least one embodiment, the angle formed between the direction of radio frequency signal transmission of the at least one portion of the second portion of traces 541 and the direction of radio frequency signal transmission of the first set of primary traces is greater than 90 degrees. In at least one embodiment, the angle formed between the direction of radio frequency signal transmission of the at least one portion of the second portion of traces 541 and the direction of radio frequency signal transmission of the first set of primary traces is greater than 135 degrees. In at least one embodiment, the angle formed between the direction of radio frequency signal transmission of the at least one portion of the second portion of traces 541 and the direction of radio frequency signal transmission of the first set of primary traces is greater than 160 degrees. In at least one embodiment, the angle formed between the direction of radio frequency signal transmission of the at least one portion of the second portion of traces 541 and the direction of radio frequency signal transmission of the first set of primary traces is 180 degrees.

[0197] In at least one embodiment, the first set of primary traces includes a first primary trace and a second primary trace, a first end of the first primary trace is connected to the first differential output, a second end of the first primary trace is grounded through a first via; a first end of the second primary trace is connected to the first differential output, a second end of the second primary trace is grounded through a second via.

[0198] The second set of primary traces includes a third primary trace and a fourth primary trace, a first end of the third primary trace is connected to the second differential output, a second end of the third primary trace is grounded through a third via; a first end of the fourth primary trace is connected to the second differential output, a second end of the fourth primary trace is grounded through a fourth via.

[0199] The first set of secondary traces includes a first secondary trace, the first secondary trace is disposed between and coupled to the first primary trace and the second primary trace, the second set of secondary traces includes a third secondary trace, the third secondary trace is disposed between and coupled to the third primary trace and the fourth primary trace, the first secondary trace and the third secondary trace are connected in series through the secondary connection trace.

[0200] As shown in FIG. 1, the first set of primary traces 311 includes a first primary trace and a second primary trace, a first end of the first primary trace is connected to the first differential output 21, a second end of the first primary trace is grounded through a first via; a first end of the second primary trace is connected to the first differential output 21, a second end of the second primary trace is grounded through a second via.

[0201] In at least one embodiment, part of the first group of bonding wires realizes the connection of the first end of the first primary line to the first differential output end 21, and another part of the first group of bonding wires realizes the connection of the first end of the second primary line to the first differential output end 21.

[0202] In at least one embodiment, the first group of bonding wires realizes the connection of the first end of the first primary line to the first differential output end 21, or the first group of bonding wires realizes the connection of the first end of the second primary line to the first differential output end 21. The first end of the first primary line and the first end of the second primary line are connected through the wiring pattern of the substrate or additional bonding wires.

[0203] The second group of primary lines 312 includes a third primary line and a fourth primary line, the first end of the third primary line is connected to the second differential output end 22, and the second end of the third primary line is grounded through a third via hole; the first end of the fourth primary line is connected to the second differential output end 22, and the second end of the fourth primary line is grounded through a fourth via hole.

[0204] In at least one embodiment, part of the second group of bonding wires realizes the connection of the first end of the third primary line to the second differential output end 22, and another part of the second group of bonding wires realizes the connection of the first end of the fourth primary line to the second differential output end 22.

[0205] In at least one embodiment, the first group of bonding wires realizes the connection of the first end of the third primary line to the second differential output end 22, or the first group of bonding wires realizes the connection of the first end of the fourth primary line to the second differential output end 22. The first end of the third primary line and the first end of the fourth primary line are connected through the wiring pattern of the substrate or additional bonding wires.

[0206] The first group of secondary lines 321 includes a first secondary line, which is arranged between the first primary line and the second primary line and coupled to the first primary line and the second primary line respectively; the second group of secondary lines 322 includes a third secondary line, which is arranged between the third primary line and the fourth primary line and coupled to the third primary line and the fourth primary line respectively; the first secondary line and the third secondary line are connected in series through the secondary connection line 323.

[0207] In at least one embodiment, a first end of the first secondary line is configured to be connected to a signal output end, a second end of the first secondary line is connected to a first end of the secondary connecting line, a second end of the secondary connecting line is connected to a first end of the third secondary line, and a second end of the third secondary line is configured to be grounded. Alternatively, a first end of the first secondary line is configured to be grounded, a second end of the first secondary line is connected to a first end of the secondary connecting line, a second end of the secondary connecting line is connected to a first end of the third secondary line, and a second end of the third secondary line is configured to be connected to a signal output end.

[0208] In at least one embodiment, a first end of the first secondary line is configured to be grounded, a second end of the first secondary line is connected to a first end of the secondary connecting line, a second end of the secondary connecting line is connected to a first end of the third secondary line, and a second end of the third secondary line is configured to be connected to a signal output end.

[0209] In at least one embodiment, a first end of the first secondary line is configured to be grounded, a second end of the first secondary line is connected to a first end of the secondary connecting line, a second end of the secondary connecting line is connected to a first end of the third secondary line, and a second end of the third secondary line is configured to be connected to a signal output end.

[0210] In at least one embodiment, the first group of primary lines includes a first primary line, a first end of the first primary line is connected to the first differential output end, and a second end of the first primary line is grounded through a first via hole;

[0211] The second group of primary lines includes a third primary line, a first end of the third primary line is connected to the second differential output end, and a second end of the third primary line is grounded through a third via hole;

[0212] The first group of secondary lines includes a first secondary line and a second secondary line, a first end of the first secondary line is connected to a first end of the second secondary line, a second end of the first secondary line is grounded through a sixth via hole, and a second end of the second secondary line is grounded through a seventh via hole; and the second group of secondary lines includes a third secondary line and a fourth secondary line, a first end of the third secondary line is connected to a first end of the fourth secondary line, a second end of the third secondary line is grounded through an eighth via hole, and a second end of the fourth secondary line is grounded through a ninth via hole.

[0213] The first primary line is disposed between and coupled to the first secondary line and the second secondary line, and the third primary line is disposed between and coupled to the third secondary line and the fourth secondary line.

[0214] In at least one embodiment, a first end of the first primary line is connected to the first differential output terminal by a first set of bond wires, a first end of the third primary line is connected to the second differential output terminal by a second set of bond wires, a first end of the first secondary line is connected to a first end of the second secondary line by a fifth set of bond wires, and a first end of the third secondary line is connected to a first end of the fourth secondary line by a sixth set of bond wires.

[0215] As shown in FIG. 2, a first end of the first primary line is connected to the first differential output terminal by a first set of bond wires 41, a first end of the third primary line is connected to the second differential output terminal by a second set of bond wires 42, a first end of the first secondary line is connected to a first end of the second secondary line by a fifth set of bond wires 45, and a first end of the third secondary line is connected to a first end of the fourth secondary line by a sixth set of bond wires 46.

[0216] In at least one embodiment, the first chip includes a first differential transistor and a second differential transistor;

[0217] A first output terminal of the first differential transistor 25 is connected to the first differential feed terminal, and a first output terminal of the first differential transistor is connected to the first differential output terminal;

[0218] A second output terminal of the second differential transistor 26 is connected to the second differential feed terminal, and a second output terminal of the second differential transistor is connected to the second differential output terminal.

[0219] As shown in FIG. 8, a first output terminal of the first differential transistor 25 is connected to the first differential feed terminal 23, and a first output terminal of the first differential transistor 25 is connected to the first differential output terminal 21. A second output terminal of the second differential transistor 26 is connected to the second differential feed terminal 24, and a second output terminal of the second differential transistor 26 is connected to the second differential output terminal 22.

[0220] The first differential transistor 25 and the second differential transistor 26 can each be implemented by a single amplification transistor, or can be formed by two or more amplification transistors connected in series or in parallel, or can be implemented by other conventional implementation manners in the art, which are not limited herein. In at least one implementation manner, the first differential transistor 25 can be a bipolar junction transistor (BJT), or can be a field effect transistor (FET), etc. The second differential transistor 26 can be a bipolar junction transistor (BJT), or can be a field effect transistor (FET), etc. In at least one implementation manner, the first differential transistor 25 is a heterojunction transistor (HBT), and the second differential transistor 26 is a heterojunction transistor (HBT). For example, the first differential transistor 25 is a heterojunction transistor implemented by a GaAs process, and the second differential transistor 26 is a heterojunction transistor implemented by a GaAs process.

[0221] In at least one implementation manner, the first differential transistor 25 is an NPN transistor, and the second differential transistor 26 is an NPN transistor. Specifically, the collector of the first differential transistor 25 is connected to the first differential feeding end 23, the collector of the first differential transistor is connected to the first differential output end 21, the emitter of the first differential transistor 25 is configured to be grounded, and the base of the first differential transistor is configured to receive an input first differential input radio frequency signal for parallel processing and amplification. The collector of the second differential transistor 26 is connected to the second differential feeding end 24, the collector of the second differential transistor is connected to the second differential output end 22, the emitter of the second differential transistor 26 is configured to be grounded, and the base of the second differential transistor is configured to receive an input second differential input radio frequency signal for parallel processing and amplification.

[0222] In at least one embodiment, the first output end of the first differential transistor is connected to the first differential output end through at least one passive element, and the second output end of the second differential transistor is connected to the second differential output end through at least one passive element.

[0223] The passive element can be an inductor, a capacitor, a resistor, etc. The passive element can be connected in series between the first output end of the first differential transistor and the first differential output end, can be connected in parallel between two differential paths, or one end can be connected to a node between the first output end and the first differential output end, and the other end can be grounded.

[0224] In at least one embodiment, the first output end of the first differential transistor is connected to the first differential output end through a first series capacitor, and the second output end of the second differential transistor is connected to the second differential output end through a second series capacitor.

[0225] As shown in FIG. 9, the first output end of the first differential transistor is connected to the first differential output end through a first series capacitor C1, and the second output end of the second differential transistor is connected to the second differential output end through a second series capacitor C2.

[0226] In at least one embodiment, the radio frequency power amplifier further comprises a third inductor and a third capacitor;

[0227] The first end of the first group of secondary wires is connected to the first end of the third inductor, the second end of the first group of secondary wires is connected to the first end of the secondary connecting wire, the second end of the secondary connecting wire is connected to the first end of the second group of secondary wires, the second end of the second group of secondary wires is configured to be grounded, the second end of the third inductor is connected to the first end of the third capacitor, and the second end of the third capacitor is configured to be grounded.

[0228] The secondary connecting wire, the third inductor and the third capacitor are configured to suppress harmonic signals of the radio frequency power amplifier.

[0229] In this embodiment, the suppression of the harmonic signals of the radio frequency power amplifier is realized by combining the secondary connecting wire and the third inductor together with the third capacitor, the equivalent inductance of the secondary connecting wire is fully utilized, the value of the third inductor can be reduced, and the overall integration is improved.

[0230] In at least one embodiment, the inductance value of the third inductor is greater than the inductance value presented by the secondary connecting wire. In at least one embodiment, the inductance value of the third inductor is less than the inductance value presented by the secondary connecting wire.

[0231] In at least one embodiment, the secondary part further comprises a third group of secondary wires. As shown in FIG. 11, the secondary part further comprises a third group of secondary wires 324. The third group of secondary wires and the first group of secondary wires are connected in series. The third group of secondary wires 324 comprises at least one secondary wire. One end of the secondary wire in the third group of secondary wires 324 is connected to one end of the first group of secondary wires 321, and the other end of the secondary wire in the third group of secondary wires 324 is configured to be grounded. It can be understood that if the third group of secondary wires 324 comprises more than two secondary wires, one end of each secondary wire in the third group of secondary wires 324 is connected to one end of the first group of secondary wires 321, and the other end is configured to be grounded. It can be understood that the number of secondary wires in the first group of secondary wires can also be more (more than three), which is not limited here.

[0232] In at least one embodiment, the secondary part further comprises a fourth group of secondary lines. The fourth group of secondary lines and the second group of secondary lines are connected in series. As shown in FIG. 10, the secondary part further comprises a fourth group of secondary lines 325. The fourth group of secondary lines 325 comprises at least one secondary line. One end of the secondary line in the fourth group of secondary lines 325 is connected to one end of the second group of secondary lines 322, and the other end of the secondary line in the fourth group of secondary lines 325 is configured to be connected to a signal output end. It can be understood that if the fourth group of secondary lines 325 comprises more than two secondary lines, one end of each secondary line in the fourth group of secondary lines 325 is connected to one end of the second group of secondary lines 322, and the other end is configured to be connected to the signal output end. It can be understood that the number of secondary lines in the first group of secondary lines can also be more (more than three), which is not limited here.

[0233] In at least one embodiment, the third group of secondary lines and the fourth group of secondary lines are at least partially coupled. As shown in FIG. 11, there are adjacent parts of the third group of secondary lines and the fourth group of secondary lines, which can be coupled to each other, and since the parts of the third group of secondary lines and the fourth group of secondary lines that are coupled to each other are coupled in the same direction, the equivalent parasitic inductance is improved, which can participate in matching or harmonic suppression, reduce the length of the wire, and further reduce the overall area of the radio frequency power amplifier, and improve the integration.

[0234] In at least one embodiment, the extension direction of the third group of secondary lines and the fourth group of secondary lines is different from the first group of secondary lines and / or the second group of secondary lines.

[0235] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0236] a substrate;

[0237] a first chip disposed on the substrate, comprising a first differential transistor, a second differential transistor, a first differential output end, a second differential output end, a first differential feed end, and a second differential feed end, a first output end of the first differential transistor is connected to the first differential feed end, and the first output end of the first differential transistor is connected to the first differential output end through a first series capacitor, a second output end of the second differential transistor is connected to the second differential feed end, and the second output end of the second differential transistor is connected to the second differential output end through a second series capacitor;

[0238] a first balun disposed on the substrate, comprising a primary part and a secondary part;

[0239] The primary part includes a first group of primary lines and a second group of primary lines, one end of the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded; one end of the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded;

[0240] The secondary part includes a first group of secondary lines, a second group of secondary lines and a secondary connecting line, the secondary connecting line connects the first group of secondary lines and the second group of secondary lines in series; the first group of secondary lines is coupled with the first group of primary lines and extends in the same direction, and the second group of secondary lines is coupled with the second group of primary lines and extends in the same direction;

[0241] A power supply end is arranged on the substrate, the first differential feeding end is connected to the power supply end, and the second differential feeding end is connected to the power supply end.

[0242] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0243] A substrate;

[0244] A first chip is arranged on the substrate and includes a first differential output end, a second differential output end, a first differential feeding end and a second differential feeding end;

[0245] A first balun includes a primary part and a secondary part;

[0246] The first end of the primary part is connected to the first differential output end through a first group of bonding wires, the second end of the primary part is connected to the second differential output end through a second group of bonding wires, the first differential feeding end is connected to a power supply end through a third group of bonding wires, and the second differential feeding end is connected to the power supply end through a fourth group of bonding wires;

[0247] The fourth group of bonding wires is arranged between the first group of bonding wires and the third group of bonding wires, and the third group of bonding wires is arranged between the second group of bonding wires and the fourth group of bonding wires.

[0248] In the embodiment, as shown in FIG. 10, the first chip 20 arranged on the substrate includes a first differential output end 21, a second differential output end 22, a first differential feeding end 23 and a second differential feeding end 24.

[0249] The first balun includes a primary part and a secondary part. In the embodiment, the first balun can adopt an existing balun structure, which is not limited herein. In at least one embodiment, the first balun can be implemented in the manner described in any of the above embodiments or embodiments. In at least one embodiment, the first balun is disposed on the substrate 10. In at least one embodiment, the first balun is disposed in the second chip. Optionally, the second chip is an IPD chip.

[0250] The first end of the primary part is connected to the first differential output end 21 through a first set of bonding wires 41, the second end of the primary part is connected to the second differential output end 22 through a second set of bonding wires 42, the first differential feed end is connected to the power supply end through a third set of bonding wires 43, and the second differential feed end is connected to the power supply end through a fourth set of bonding wires 44.

[0251] The fourth set of bonding wires 44 is disposed between the first set of bonding wires 41 and the third set of bonding wires 43, and the third set of bonding wires 43 is disposed between the second set of bonding wires 42 and the fourth set of bonding wires 44.

[0252] The fourth set of bonding wires 44 is disposed adjacent to at least part of the first set of bonding wires 41. Since the first set of bonding wires 41 connects the first differential output end and the first end of the primary part, and the fourth set of bonding wires 44 connects the second differential feed end and the power supply end, the transmission direction of the radio frequency signal of the fourth set of bonding wires 44 is different from that of the first set of bonding wires 41. Therefore, the fourth set of bonding wires 44 can reduce the equivalent parasitic inductance of the first set of bonding wires 41, and can optimize the performance of the radio frequency power amplifier as a whole.

[0253] The third set of bonding wires 43 is disposed adjacent to at least part of the second set of bonding wires 42. Since the second set of bonding wires 42 connects the second differential output end and the second end of the primary part, and the third set of bonding wires 43 connects the second differential feed end and the power supply end, the transmission direction of the radio frequency signal of the third set of bonding wires 43 is different from that of the second set of bonding wires 42. Therefore, the third set of bonding wires 43 can reduce the equivalent parasitic inductance of the second set of bonding wires 42, and can optimize the performance of the radio frequency power amplifier as a whole.

[0254] In at least one embodiment, the second differential feed end is disposed between the first differential output end and the first differential feed end, and the first differential feed end is disposed between the second differential output end and the second differential feed end.

[0255] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0256] a substrate, provided with a first differential power supply terminal and a second differential power supply terminal;

[0257] a first chip, provided on the substrate, comprising a first differential output terminal, a second differential output terminal, a first differential feed terminal and a second differential feed terminal;

[0258] a first balun, provided on the substrate, comprising a primary part and a secondary part, a first end of the primary part being connected to the first differential output terminal, a second end of the primary part being connected to the second differential output terminal;

[0259] a first inductor, one end of the first inductor being connected to the first differential power supply terminal, the other end of the first inductor being connected to the first differential feed terminal, the first inductor comprising a first sub-track, the primary part comprising a first primary track, the first sub-track and the first primary track being provided on the same wiring layer of the substrate and being provided adjacently, the radio frequency signal transmission direction of the first sub-track being opposite to the radio frequency signal transmission direction of the first primary track;

[0260] a second inductor, one end of the second inductor being connected to the second differential power supply terminal, the other end of the second inductor being connected to the second differential feed terminal, the second inductor comprising a second sub-track, the primary part comprising a second primary track, the second sub-track and the second primary track being provided on the same wiring layer of the substrate and being provided adjacently, the radio frequency signal transmission direction of the second sub-track being opposite to the radio frequency signal transmission direction of the second primary track.

[0261] In the present embodiment, taking FIG. 14 as an example, the first chip 20 is provided on the substrate 10, comprising a first differential output terminal 21, a second differential output terminal 22, a first differential feed terminal 23 and a second differential feed terminal 24.

[0262] The first balun 30 is provided on the substrate 10. Specifically, the first balun can be realized by using at least one wiring layer of the substrate 10.

[0263] In at least one embodiment, the first balun is provided on the same wiring layer of the substrate. It can be understood that in this embodiment, the first balun can be realized by using the balun structure of any of the above embodiments.

[0264] In at least one embodiment, the first balun is realized by using at least two wiring layers of the substrate. Specifically, the primary part of the first balun can be realized by using at least two wiring layers, or the secondary part can be realized by using at least two wiring layers, or the primary part and the secondary part can be realized by using different wiring layers, or any combination of the above implementation manners, etc.

[0265] The first balun includes a primary part and a secondary part. A first end of the primary part is connected to the first differential output end, and a second end of the primary part is connected to the second differential output end. It can be understood that the connection between the first end of the primary part and the first differential output end is not limited herein, and the connection between the second end of the primary part and the second differential output end is not limited herein.

[0266] The first inductor 51 is connected to the first differential output end and the first differential feeding end respectively. As shown in FIG. 14, the first inductor 51 includes a first sub-wire 512. The primary part includes a first primary wire 313. The first sub-wire 512 and the first primary wire 313 are arranged on the same wiring layer of the substrate and are arranged close to each other. The close arrangement of the first sub-wire 512 and the first primary wire 313 can mean that the first sub-wire is arranged closer to the first primary wire than other wires on the same wiring layer relative to the first inductor, or the first primary wire is arranged closer to the first sub-wire than other wires on the same wiring layer relative to the primary part.

[0267] The RF signal transmission direction of the first sub-wire is opposite to the RF signal transmission direction of the first primary wire. In this way, the equivalent parasitic inductance of the first primary wire can be reduced, and the performance of the whole RF power amplifier can be optimized. It can be understood that the RF signal transmission direction of the first sub-wire is opposite to the RF signal transmission direction of the first primary wire, and it is not strictly required that the two transmission directions form a strict 180-degree reverse. In at least one embodiment, the RF signal transmission direction of the first sub-wire and the RF signal transmission direction of the first primary wire form an angle greater than 90 degrees. In at least one embodiment, the RF signal transmission direction of the first sub-wire and the RF signal transmission direction of the first primary wire form an angle greater than 135 degrees. In at least one embodiment, the RF signal transmission direction of the first sub-wire and the RF signal transmission direction of the first primary wire form an angle greater than 160 degrees. In at least one embodiment, the RF signal transmission direction of the first sub-wire and the RF signal transmission direction of the first primary wire form an angle of 180 degrees.

[0268] The second inductor 52 is connected to the second differential output end and the second differential feeding end respectively. As shown in FIG. 14, the second inductor 52 includes a second sub-wire 522. The primary part includes a second primary wire 314. The second sub-wire 522 and the second primary wire 314 are arranged on the same wiring layer of the substrate and are arranged close to each other. The close arrangement of the second sub-wire 522 and the second primary wire 314 can mean that the second sub-wire is closer to the second primary wire than other wires arranged on the same wiring layer with the second sub-wire, or the second primary wire is closer to the second sub-wire than other wires arranged on the same wiring layer with the second sub-wire in the primary part.

[0269] The radio frequency signal transmission direction of the second sub-wire is opposite to the radio frequency signal transmission direction of the second primary wire. In this way, the equivalent parasitic inductance of the second primary wire can be reduced, and the performance of the whole radio frequency power amplifier can be optimized. It can be understood that the radio frequency signal transmission direction of the second sub-wire is opposite to the radio frequency signal transmission direction of the second primary wire, and it is not strictly required that the two transmission directions form a strict 180-degree reverse. In at least one embodiment, the radio frequency signal transmission direction of the second sub-wire and the radio frequency signal transmission direction of the second primary wire form an angle greater than 90 degrees. In at least one embodiment, the radio frequency signal transmission direction of the second sub-wire and the radio frequency signal transmission direction of the second primary wire form an angle greater than 135 degrees. In at least one embodiment, the radio frequency signal transmission direction of the second sub-wire and the radio frequency signal transmission direction of the second primary wire form an angle greater than 160 degrees. In at least one embodiment, the radio frequency signal transmission direction of the second sub-wire and the radio frequency signal transmission direction of the second primary wire form an angle of 180 degrees.

[0270] In at least one embodiment, the radio frequency signal transmission direction of the first sub-wire and the radio frequency signal transmission direction of the first primary wire form an angle greater than 160 degrees, and the radio frequency signal transmission direction of the second sub-wire and the radio frequency signal transmission direction of the second primary wire form an angle greater than 160 degrees.

[0271] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0272] a substrate provided with a first differential power supply end and a second differential power supply end;

[0273] a first chip arranged on the substrate, comprising a first differential output end, a second differential output end, a first differential feeding end and a second differential feeding end;

[0274] a first balun comprising a primary part and a secondary part, a first end of the primary part being connected to the first differential output end through a first connection path, a second end of the primary part being connected to the second differential output end through a second connection path;

[0275] a power end disposed on the substrate, the first differential feeding end being connected to the power end through a third connection path, the second differential feeding end being connected to the power end through a fourth connection path;

[0276] at least part of the radio frequency signal transmission direction in the third connection path is opposite to at least part of the radio frequency signal transmission direction in the second connection path, or at least part of the radio frequency signal transmission direction in the third connection path is opposite to at least part of the radio frequency signal transmission direction in the first group of primary lines or the second group of primary lines;

[0277] at least part of the radio frequency signal transmission direction in the fourth connection path is opposite to at least part of the radio frequency signal transmission direction in the first connection path, or at least part of the radio frequency signal transmission direction in the fourth connection path is opposite to at least part of the radio frequency signal transmission direction in the first group of primary lines or the second group of primary lines.

[0278] The first connection path can include a wiring pattern in the substrate, a wiring pattern in the chip, a bonding wire, and the like to achieve electrical connection. In at least one embodiment, the first connection path can adopt the connection mode between the first end of the primary part and the first differential output end described in any of the above embodiments.

[0279] The second connection path can include a wiring pattern in the substrate, a wiring pattern in the chip, a bonding wire, and the like to achieve electrical connection. In at least one embodiment, the second connection path can adopt the connection mode between the second end of the primary part and the second differential output end described in any of the above embodiments.

[0280] The third connection path can include a wiring pattern in the substrate, a wiring pattern in the chip, a bonding wire, and the like to achieve electrical connection. In at least one embodiment, the third connection path can adopt the connection mode between the first differential feeding end and the power end described in any of the above embodiments.

[0281] The fourth connection path can include a wiring pattern in the substrate, a wiring pattern in the chip, a bonding wire, and the like to achieve electrical connection. In at least one embodiment, the fourth connection path can adopt the connection mode between the second differential feeding end and the power end described in any of the above embodiments.

[0282] The transmission direction of the radio frequency signal in at least part of the third connection path is opposite to the transmission direction of the radio frequency signal in at least part of the second connection path. For example, as shown in FIG. 4, the third connection path includes a third group of bonding wires 43, and the second connection path includes a second group of bonding wires 42, the transmission direction of the radio frequency signal in the third group of bonding wires 43 is opposite to the transmission direction of the radio frequency signal in the second group of bonding wires 42.

[0283] The transmission direction of the radio frequency signal in at least part of the third connection path is opposite to the transmission direction of the radio frequency signal in at least part of the first group of primary wires. For example, as shown in FIG. 7, the third connection path includes a first sub-wire 511, and the transmission direction of the radio frequency signal in the first sub-wire 511 is opposite to the transmission direction of the radio frequency signal in the first group of primary wires 311.

[0284] The transmission direction of the radio frequency signal in at least part of the third connection path is opposite to the transmission direction of the radio frequency signal in at least part of the second group of primary wires. For example, as shown in FIG. 6, the third connection path includes a partial wire 531, and the transmission direction of the radio frequency signal in the partial wire 531 is opposite to the transmission direction of the radio frequency signal in the second group of primary wires 312.

[0285] The transmission direction of the radio frequency signal in at least part of the fourth connection path is opposite to the transmission direction of the radio frequency signal in at least part of the first connection path. For example, as shown in FIG. 4, the fourth connection path includes a fourth group of bonding wires 44, and the first connection path includes a first group of bonding wires 41, the transmission direction of the radio frequency signal in the fourth group of bonding wires 44 is opposite to the transmission direction of the radio frequency signal in the first group of bonding wires 41.

[0286] The transmission direction of the radio frequency signal in at least part of the fourth connection path is opposite to the transmission direction of the radio frequency signal in at least part of the first group of primary wires. For example, as shown in FIG. 6, the fourth connection path includes a partial wire 532, and the transmission direction of the radio frequency signal in the partial wire 532 is opposite to the transmission direction of the radio frequency signal in the first group of primary wires 311.

[0287] The transmission direction of the radio frequency signal in at least part of the fourth connection path is opposite to the transmission direction of the radio frequency signal in at least part of the second group of primary wires. For example, as shown in FIG. 7, the fourth connection path includes a second sub-wire 521, and the transmission direction of the radio frequency signal in the second sub-wire 521 is opposite to the transmission direction of the radio frequency signal in the second group of primary wires 312.

[0288] In at least one embodiment, the present application provides a radio frequency power amplifier, comprising:

[0289] a substrate;

[0290] a first chip disposed on the substrate, including a first output terminal;

[0291] a first transformer disposed on the substrate, including a primary part and a secondary part, a first end of the primary part connected to the first output terminal, and a second end of the primary part configured to be connected to a ground or a power terminal;

[0292] a first inductor connected in a feeding path of the radio frequency power amplifier, the first inductor including a first sub-track, the primary part including a first primary track, the first sub-track and the first primary track disposed on a same wiring layer of the substrate and adjacent to each other, and a radio frequency signal transmission direction of the first sub-track opposite to a radio frequency signal transmission direction of the first primary track.

[0293] In the embodiment, taking FIG. 15 as an example, the substrate 10 includes a first chip 20 and a first transformer. The first chip 10 includes a first output terminal 25, which is an output terminal of a radio frequency signal. The radio frequency signal can be a signal after a front-stage radio frequency input signal is amplified by the first chip.

[0294] The first transformer is disposed on the substrate and includes a primary part and a secondary part. A first end of the primary part is connected to the first output terminal 25, and a second end of the primary part is configured to be connected to a ground or a power terminal. The first transformer can adopt an existing transformer implementation structure. In at least one embodiment, the first transformer can adopt the same structure as the first balun in any of the above embodiments or embodiments. In at least one embodiment, a first end of the secondary part is configured to be connected to a signal output terminal, and a second end of the secondary part is configured to be connected to a ground.

[0295] The first inductor is connected in a feeding path of the radio frequency power amplifier. It can be understood that the feeding path can be a path for supplying power to an amplification transistor in the first chip.

[0296] In at least one embodiment, one end of the first inductor is connected to the power terminal, and the other end of the first inductor is connected to a first feeding terminal 26 of the first chip, and the second end of the primary part is configured to be connected to a ground.

[0297] In at least one embodiment, one end of the first inductor is connected to the power terminal, and the other end of the first inductor is connected to the second end of the primary part. In this embodiment, the second end of the primary part is connected to the power terminal through the first inductor.

[0298] The first inductor includes a first sub-wire, the primary part includes a first primary wire, the first sub-wire and the first primary wire are arranged on the same wiring layer of the substrate and arranged adjacent to each other, and the radio frequency signal transmission direction of the first sub-wire is opposite to the radio frequency signal transmission direction of the first primary wire. As shown in FIG. 15, the first sub-wire 512 of the first inductor 51 and the first primary wire 313 of the primary part are arranged on the same wiring layer of the substrate and arranged adjacent to each other, and the radio frequency signal transmission direction of the first sub-wire 512 is opposite to the radio frequency signal transmission direction of the first primary wire 313.

[0299] In at least one embodiment, the first chip includes a first amplification transistor;

[0300] The third output end of the first amplification transistor is connected to the first feeding end, and the third output end of the first amplification transistor is connected to the first output end.

[0301] The first amplification transistor can be a single amplification transistor, or can be two or more amplification transistors connected in series or in parallel, or can be implemented in other conventional ways in the art, which is not limited here. In at least one embodiment, the first amplification transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one embodiment, the first amplification transistor is a heterojunction transistor (HBT). For example, the first amplification transistor is a heterojunction transistor implemented by GaAs process.

[0302] In at least one embodiment, the first amplification transistor is an NPN transistor. Specifically, the collector of the first amplification transistor is connected to the first feeding end, and the collector of the first amplification transistor is connected to the first output end, the emitter of the first amplification transistor is configured to be grounded, and the base of the first amplification transistor is configured to receive an input radio frequency signal for amplification processing.

[0303] In at least one embodiment, the third output end of the first amplification transistor is connected to the first output end through at least one passive element.

[0304] The passive element can be an inductor, a capacitor, a resistor, etc. The passive element can be connected in series between the third output end of the first amplification transistor and the first output end, or can be connected in parallel between two differential paths, or one end is connected to the node between the third output end and the first output end, and the other end is grounded.

[0305] In at least one embodiment, the third output end of the first amplification transistor is connected to the first output end through a first series capacitor.

[0306] In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 135 degrees.

[0307] In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 90 degrees. In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 135 degrees. In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 160 degrees. In at least one embodiment, an angle formed by the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is 180 degrees.

[0308] In at least one embodiment, the primary portion and the secondary portion extend in the same direction. As shown in FIG. 16, the primary portion and the secondary portion of the first transformer extend in the same direction. In at least one embodiment, the first transformer is disposed on the same routing layer of the substrate.

[0309] In at least one embodiment, the present disclosure provides a radio frequency power amplifier, comprising:

[0310] a substrate;

[0311] a first chip disposed on the substrate, comprising a first differential output and a second differential output;

[0312] a first balun comprising a primary portion and a secondary portion;

[0313] the primary portion comprises a first group of primary traces and a second group of primary traces, one end of the first group of primary traces is configured to be connected to the first differential output, the other end of the first group of primary traces is configured to be grounded, a virtual connection formed by the one end of the first group of primary traces and the other end of the first group of primary traces extends in a first direction; one end of the second group of primary traces is configured to be connected to the second differential output, the other end of the second group of primary traces is configured to be grounded, a virtual connection formed by the one end of the second group of primary traces and the other end of the second group of primary traces extends in a second direction;

[0314] the secondary portion comprises a first group of secondary traces and a second group of secondary traces, the first group of secondary traces and the second group of secondary traces are connected in series, the first group of secondary traces is coupled to the first group of primary traces, and the second group of secondary traces is coupled to the second group of primary traces;

[0315] The virtual connection formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends in a first direction, and the virtual connection formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends in a second direction.

[0316] In the present embodiment, the first balun 30 includes a primary part and a secondary part. Optionally, the first balun 30 can be disposed on a substrate, or the first balun 30 can be disposed in a first chip, or the first balun is disposed in a chip different from the first chip. In at least one embodiment, the first balun is at least partially disposed in the first chip and at least partially disposed on the substrate. In at least one embodiment, the first balun is at least partially disposed in the first chip and at least partially disposed in a chip different from the first chip.

[0317] The primary part includes a first group of primary lines and a second group of primary lines. As shown in FIGS. 17, 18 and 19, the first group of primary lines 311 includes at least one primary line. Understandably, the primary line in the first group of primary lines can be a straight line, a curved line, an arcuate line, or a broken line with any bending shape, etc. The second group of primary lines 312 includes at least one primary line. Understandably, the primary line in the second group of primary lines 312 can be a straight line, a curved line, an arcuate line, or a broken line with any bending shape, etc. Exemplarily, as shown in FIG. 17, the primary lines in the first group of primary lines and the second group of primary lines are straight lines. As shown in FIG. 18, the primary lines in the first group of primary lines and the second group of primary lines are arcuate lines.

[0318] One end of the first group of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded. That is to say, one end of any primary line in the first group of primary lines is configured to be connected to the first differential output end, and the other end of any primary line is configured to be grounded. The virtual connection formed by one end of the first group of primary lines and the other end of the first group of primary lines extends in a first direction, that is, the connection formed by the two end points of the first group of primary lines extends in the first direction, as indicated by the dotted line shown in FIG. 18.

[0319] One end of the second group of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded. That is to say, one end of any primary line in the second group of primary lines is configured to be connected to the first differential output end, and the other end of any primary line is configured to be grounded. The virtual connection formed by one end of the second group of primary lines and the other end of the second group of primary lines extends in a second direction, that is, the connection formed by the two end points of the second group of primary lines extends in the second direction, as indicated by the other dotted line shown in FIG. 18.

[0320] As shown in FIG. 17, FIG. 18 and FIG. 19, the secondary part includes a first group of secondary lines and a second group of secondary lines, the first group of secondary lines 321 and the second group of secondary lines 322 are connected in series, the first group of secondary lines is coupled with the first group of primary lines, and the second group of secondary lines is coupled with the second group of primary lines.

[0321] The first group of secondary lines 321 includes at least one primary line. Understandably, the secondary lines in the first group of secondary lines can be straight lines, curved lines, arc lines or broken lines with any bending shape, etc. The second group of secondary lines 322 includes at least one primary line. Understandably, the secondary lines in the second group of secondary lines can be straight lines, curved lines, arc lines or broken lines with any bending shape, etc. Exemplarily, as shown in FIG. 17, the secondary lines in the first group of secondary lines and the second group of secondary lines are straight lines. As shown in FIG. 18, the secondary lines in the first group of secondary lines and the second group of secondary lines are arc lines.

[0322] The virtual connection formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends in the first direction, i.e. the connection formed by the two end points of the first group of secondary lines extends in the first direction, as indicated by the dotted line shown in FIG. 18. The virtual connection formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends in the second direction, i.e. the connection formed by the two end points of the second group of secondary lines extends in the second direction, as indicated by the other dotted line shown in FIG. 18.

[0323] In the embodiment, the primary part of the first balun includes the first group of primary lines and the second group of primary lines, and the first group of primary lines and the second group of primary lines are separately arranged. The secondary part includes the first group of secondary lines and the second group of secondary lines, and the virtual connection formed by one end of the first group of primary lines and the other end of the first group of primary lines extends in the first direction, the virtual connection formed by one end of the second group of primary lines and the other end of the second group of primary lines extends in the second direction, the virtual connection formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends in the first direction, and the virtual connection formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends in the second direction. The wiring structure of the balun is greatly flexible relative to the traditional balun, effectively reducing the disadvantage that the coupling area of the traditional balun is large and not easy to use, which can facilitate the radio frequency power amplifier to achieve better integration, and the following coupling of the primary and the secondary also ensures the coupling performance of the balun.

[0324] In at least one embodiment, the first direction and the second direction are different directions, i.e. the first direction and the second direction are not parallel to each other. In at least one embodiment, the first direction and the second direction are anti-parallel. Exemplarily, the first direction is vertically upward, and the second direction is vertically downward. Alternatively, the first direction is horizontally leftward, and the second direction is horizontally rightward.

[0325] In at least one embodiment, the first direction is perpendicular to the second direction.

[0326] In at least one embodiment, the first chip comprises a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along a third direction, the second differential transistor is arranged along a fourth direction, the third direction and the fourth direction are different directions; the output end of the first differential transistor array is connected with the first differential output end, and the output end of the second differential transistor array is connected with the second differential output end.

[0327] In at least one embodiment, the first differential transistor array can be composed of a plurality of amplifying transistors. Optionally, the plurality of amplifying transistors are connected in parallel. Exemplarily, the first differential transistor array can be the first amplifying transistor in any of the above embodiments. The first differential transistor array is arranged along a third direction. In this case, the length direction of the first differential transistor array as a whole is arranged along the third direction. Understandably, the first differential transistor can be a multi-row structure, in which case each row is arranged along the third direction, or at least one row is arranged along the third direction. The output end of each amplifying transistor in the first differential transistor array is respectively connected with the first differential output end, or the output ends of the amplifying transistors are interconnected and then connected with the first differential output end as a whole. In at least one embodiment, the second differential transistor array can be composed of a plurality of amplifying transistors. Optionally, the plurality of amplifying transistors are connected in parallel. Exemplarily, the second differential transistor array can be the second amplifying transistor in any of the above embodiments. The second differential transistor array is arranged along a fourth direction. In this case, the length direction of the second differential transistor array as a whole is arranged along the fourth direction. Understandably, the second differential transistor can be a multi-row structure, in which case each row is arranged along the fourth direction, or at least one row is arranged along the fourth direction.

[0328] The output end of the second differential transistor array is connected with the second differential output end, specifically, the output end of each amplifying transistor in the second differential transistor array is respectively connected with the second differential output end, or the output ends of the amplifying transistors are interconnected and then connected with the second differential output end as a whole.

[0329] The third direction and the fourth direction are different directions, i.e., the third direction and the fourth direction are not parallel. In at least one embodiment, the third direction and the fourth direction are perpendicular to each other. In at least one embodiment, the third direction and the fourth direction form an angle greater than 0 degrees and less than 90 degrees. In at least one embodiment, the third direction and the fourth direction form an angle greater than or equal to 0 degrees and less than 60 degrees. In at least one embodiment, as shown in FIG. 3, the third direction and the fourth direction form an angle greater than 0 degrees and less than 45 degrees.

[0330] In the present embodiment, due to the separate arrangement of the first balun, the first differential transistor array and the second differential transistor array are arranged in different directions, which also makes the layout of the first chip more flexible, facilitates the further adaptation of the structure of the first balun, can reduce the loss caused by additional wiring, and can further improve the integration of the overall radio frequency power amplifier, and ensure the performance.

[0331] In at least one embodiment, the first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array is arranged along a second direction, and the second differential transistor is arranged along a first direction; the output end of the first differential transistor array is connected with the first differential output end, and the output end of the second differential transistor array is connected with the second differential output end.

[0332] As shown in FIG. 20, the first differential transistor array 251 is arranged along a second direction, and the second differential transistor array 261 is arranged along a first direction. That is, the arrangement direction of the second differential transistor array 261 is the same as the direction of the connection line formed by one end of the first group of primary lines and the other end of the first group of primary lines. The arrangement direction of the first differential transistor array 251 is the same as the direction of the connection line formed by one end of the second group of primary lines and the other end of the second group of primary lines.

[0333] In at least one embodiment, the first group of primary lines and the first group of secondary lines extend along a first direction, and the second group of primary lines and the second group of secondary lines extend along a second direction. As shown in FIG. 20, the first group of primary lines 311 and the first group of secondary lines 321 extend along a first direction, and the second group of primary lines 312 and the second group of secondary lines 322 extend along a second direction. The coupling performance of the balun as a whole can be improved, and the rationality of the overall layout of the radio frequency power amplifier can be further ensured, which can further improve the integration on the premise of ensuring the performance.

[0334] In at least one embodiment, the first direction is a direction of one side of the first chip, and the second direction is a direction of another side of the second chip. In at least one embodiment, the first direction and the second direction are perpendicular.

[0335] In at least one embodiment, one end of the first set of primary lines and one end of the first set of secondary lines are disposed adjacent to a midpoint of the first differential transistor array in a second direction, and one end of the second set of primary lines and one end of the second set of secondary lines are disposed adjacent to a midpoint of the second differential transistor array in a first direction.

[0336] As shown in FIG. 23, one end of the first set of primary lines and one end of the first set of secondary lines are disposed adjacent to a midpoint of the first differential transistor array 251 in a second direction. One end of the second set of primary lines and one end of the second set of secondary lines are disposed adjacent to a midpoint of the second differential transistor array 261 in a first direction. In this way, the length of the connection path of each transistor in the first differential transistor array to the first balun is more balanced, the length of the connection path of each transistor in the second differential transistor array to the first balun is more balanced, and the performance of the radio frequency power amplifier is further ensured to be achieved.

[0337] In at least one embodiment, the radio frequency power amplifier further comprises a secondary connection line, the secondary connection line connecting the first set of secondary lines and the second set of secondary lines in series.

[0338] As shown in FIGS. 17-19, the secondary connection line 323 connects the first set of secondary lines and the second set of secondary lines in series. The secondary connection line 323 can be disposed on the substrate, or can be disposed in the first chip, or the secondary connection line 323 can be partially disposed on the substrate and partially disposed in the first chip. In at least one embodiment, the secondary connection line is at least partially implemented by a bonding wire.

[0339] In at least one embodiment, the first balun is disposed on the substrate, and the first chip is disposed on the substrate in a flip-chip manner. As shown in FIG. 20, the first balun 30 is disposed on the substrate, and the first chip 20 is disposed on the substrate 10 in a flip-chip manner. The connection between the first chip 20 and the first balun 30 can be achieved by bumps on the first chip and corresponding pads on the substrate.

[0340] In at least one embodiment, the secondary connection line is disposed on the substrate, and a longitudinal projection of the first chip on the substrate covers at least part of the secondary connection line.

[0341] As shown in FIG. 24, the first chip 20 is arranged on the substrate 10 by means of flip-chip. The secondary connection lines 323 are realized by the wiring pattern on the substrate, and the longitudinal projection of the first chip on the substrate covers at least part of the secondary connection lines. The integration level of the whole is further improved.

[0342] In at least one embodiment, the secondary connection lines are arranged in the first chip 20, and the first group of secondary lines and the second group of secondary lines arranged on the substrate are connected in series by the secondary connection lines in the first chip 20.

[0343] In at least one embodiment, the primary part, the first group of secondary lines and the second group of secondary lines are arranged on the substrate, and the secondary connection lines are at least partially arranged on the first chip.

[0344] In at least one embodiment, one end of the first group of primary lines is connected to the first differential output end through the first group of bonding wires, and one end of the second group of primary lines is connected to the second differential output end through the second group of bonding wires.

[0345] One end of the first group of secondary lines is connected to the first end of the secondary connection lines in the first chip through the seventh group of bonding wires, and one end of the second group of secondary lines is connected to the second end of the secondary connection lines in the first chip through the eighth group of bonding wires.

[0346] As shown in FIG. 17, one end of the first group of primary lines is connected to the first differential output end through the first group of bonding wires 41, and one end of the second group of primary lines is connected to the second differential output end through the second group of bonding wires 42.

[0347] One end of the first group of secondary lines is connected to the first end of the secondary connection lines in the first chip through the seventh group of bonding wires 47, and one end of the second group of secondary lines is connected to the second end of the secondary connection lines in the first chip through the eighth group of bonding wires 48. The number of the seventh group of bonding wires 47 is at least one. In at least one embodiment, the number of the seventh group of bonding wires 47 is at least two. In at least one embodiment, the number of the seventh group of bonding wires 47 is 4-8. The number of the eighth group of bonding wires 48 is at least one. In at least one embodiment, the number of the eighth group of bonding wires 48 is at least two. In at least one embodiment, the number of the eighth group of bonding wires 48 is 4-8.

[0348] In at least one embodiment, the first set of bonding wires 41 and the seventh set of bonding wires 47 are at least partially coupled, and the second set of bonding wires 42 and the eighth set of bonding wires 48 are at least partially coupled. Due to the coupling of the first set of bonding wires 41 and the seventh set of bonding wires 47, and the coupling of the second set of bonding wires 42 and the eighth set of bonding wires 48, these sets of bonding wires are equivalent to becoming part of a first balun, thereby reducing the adverse effects of the parasitic inductance generated by these sets of bonding wires on the overall performance, further ensuring the performance of the radio frequency power amplifier.

[0349] In at least one embodiment, a passive element network is further included, the passive element network is composed of at least one passive element, the passive element can be one of resistance, capacitance, and inductance. One end of the first set of secondary wires is connected to a first end of the passive element network, the other end of the first set of secondary wires is configured to be grounded, one end of the second set of secondary wires is connected to a second end of the passive element network, the other end of the second set of secondary wires is configured to be connected to a signal output end. In at least one embodiment, the passive element network includes an inductor, one end of the first set of secondary wires is connected to a first end of the inductor, and one end of the second set of secondary wires is connected to a second end of the inductor.

[0350] In at least one embodiment, the passive element network includes a capacitor, one end of the first set of secondary wires is connected to a first end of the capacitor, and one end of the second set of secondary wires is connected to a second end of the capacitor.

[0351] In at least one embodiment, the first chip further includes a fourth capacitor, one end of the first set of secondary wires is connected to a first end of the fourth capacitor, the other end of the first set of secondary wires is configured to be grounded, one end of the second set of secondary wires is connected to a second end of the fourth capacitor, and the other end of the second set of secondary wires is configured to be connected to a signal output end.

[0352] In this embodiment, as shown in FIG. 22, the first chip 20 further includes a fourth capacitor, one end of the first set of secondary wires is connected to a first end of the fourth capacitor, the other end of the first set of secondary wires is configured to be grounded, one end of the second set of secondary wires is connected to a second end of the fourth capacitor, and the other end of the second set of secondary wires is configured to be connected to a signal output end.

[0353] In this embodiment, by configuring a fourth capacitor in the chip, the Q value of the capacitor is ensured, and the connection of the wiring is also facilitated, while the integration and the performance of the radio frequency power amplifier are ensured.

[0354] In at least one embodiment, the first set of secondary lines and the first set of primary lines are disposed on a same wiring layer of the substrate, and the second set of secondary lines and the second set of primary lines are disposed on a same wiring layer of the substrate. In this embodiment, the first set of secondary lines and the first set of primary lines are disposed on a same wiring layer of the substrate, and the second set of secondary lines and the second set of primary lines are disposed on a same wiring layer of the substrate. That is, the primary part and the secondary part of the first balun are disposed on the same wiring layer and coupled to each other, which greatly reduces the number of layers of the substrate and improves the overall integration.

[0355] In at least one embodiment, the first set of primary lines and the second set of primary lines are disposed on a first wiring layer of the substrate, and the first set of secondary lines and the second set of secondary lines are disposed on a second wiring layer of the substrate. In this embodiment, the primary part and the secondary part of the first balun are coupled longitudinally on the substrate.

[0356] In at least one embodiment, the first set of primary lines includes at least two primary lines, the second set of primary lines includes at least two primary lines, and / or the first set of secondary lines includes at least two secondary lines, and the second set of secondary lines includes at least two secondary lines.

[0357] One end of the primary line in the first set of primary lines is configured to be connected to the first differential output end, and the other end is configured to be grounded. One end of the primary line in the second set of primary lines is configured to be connected to the second differential output end, and the other end is configured to be grounded.

[0358] In at least one embodiment, further comprising:

[0359] A power supply end is disposed on the substrate.

[0360] The first chip further comprises a first differential power supply end and a second differential power supply end, the first differential power supply end is connected to the power supply end through a third connection path, and the second differential power supply end is connected to the power supply end through a fourth connection path.

[0361] The first end of the primary part is connected to the first differential output end through a first connection path, and the second end of the primary part is connected to the second differential output end through a second connection path.

[0362] One end of the first set of primary lines is connected to the first differential output end through a first connection path, and one end of the second set of primary lines is connected to the second differential output end through a second connection path.

[0363] The transmission direction of at least part of the radio frequency signals in the third connection path is opposite to the transmission direction of at least part of the radio frequency signals in the second connection path, or the transmission direction of at least part of the radio frequency signals in the third connection path is opposite to the transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines.

[0364] The transmission direction of at least part of the radio frequency signals in the fourth connection path is opposite to the transmission direction of at least part of the radio frequency signals in the first connection path, or the transmission direction of at least part of the radio frequency signals in the fourth connection path is opposite to the transmission direction of at least part of the radio frequency signals in the first group of primary lines or the second group of primary lines.

[0365] In at least one embodiment, the output end of the first differential transistor array is connected to a first feeding end, and the output end of the second differential transistor array is connected to a second feeding end.

[0366] In at least one embodiment, the output end of the first differential transistor array is connected to the first differential output end through a first series capacitor, and the output end of the second differential transistor array is connected to the second differential output end through a second series capacitor.

[0367] At least one embodiment of the present application provides a balun. Please refer to FIG. 25, which is a structural schematic diagram of a balun 100 provided by an embodiment of the present application.

[0368] The balun 100 can be applied in a radio frequency front-end module, which includes but is not limited to a substrate 10 and a first chip 11 arranged on the substrate 10. Optionally, the balun 100 can be arranged on the substrate 10 or in the first chip 11. The first chip 11 can include a radio frequency amplification circuit, or a radio frequency amplification circuit can be arranged on the substrate 10; for example, a second chip 12 is also arranged on the substrate 10, and the second chip 12 has a radio frequency amplification circuit integrated therein. Optionally, the radio frequency amplification circuit includes but is not limited to a differential power amplification circuit, a balanced power amplification circuit, a Doherty power amplification circuit or other power amplification circuits that need to synthesize or decompose radio frequency signals or perform balanced-unbalanced conversion. Optionally, the balun 100 can be applied in a radio frequency amplification circuit as an input stage balun, an intermediate stage balun or an output stage balun. The balun 100 can ensure a certain coupling degree and has a good quality factor, so as to improve the overall performance of the radio frequency front-end module when applied to the radio frequency front-end module.

[0369] The balun 100 includes a first coupling line 110, a second coupling line 120 and a third coupling line 130.

[0370] The first coupling line 110 includes a first coupling part 111 and a second coupling part 112, and the extending direction of the first coupling part 111 intersects with the extending direction of the second coupling part 112. The second coupling line 120 includes a third coupling part 121 and a fourth coupling part 122, and the extending direction of the third coupling part 121 intersects with the extending direction of the fourth coupling part 122.

[0371] The third coupling line 130 includes a fifth coupling part 131, a sixth coupling part 132 and a seventh coupling part 133. The seventh coupling part 133 includes a first sub-coupling part 1331 connected with the fifth coupling part 131 and a second sub-coupling part 1332 connected with the sixth coupling part 132, and the first sub-coupling part 1331 is connected with the second sub-coupling part 1332. The extending direction of the fifth coupling part 131 intersects with the extending direction of the seventh coupling part 133, and the extending direction of the sixth coupling part 132 intersects with the extending direction of the seventh coupling part 133.

[0372] In some embodiments, as shown in FIGS. 26a-26b, each coupling part can be linear, i.e., a linear coupling part, and the extending direction of the coupling part can be the direction of the straight line where the linear coupling part is located. As shown in FIG. 26c or FIG. 26d, the first coupling line 110, the second coupling line 120 and the third coupling line 130 can also have at least part of the coupling parts being arc-shaped coupling parts. The extending direction of the arc-shaped coupling part can be the tangent direction of the arc-shaped coupling part at a preset position. The preset position of the arc-shaped coupling part includes one end away from other coupling parts in the same coupling line.

[0373] As shown in FIGS. 26a-26d, the first coupling line 110 and the second coupling line 120 are coupled with part of the third coupling line 130. The first coupling part 111 is coupled with the first sub-coupling part 1331, and the second coupling part 112 is coupled with the fifth coupling part 131. The third coupling part 121 is coupled with the second sub-coupling part 1332, and the fourth coupling part 122 is coupled with the sixth coupling part 132.

[0374] In some embodiments, when the balun 100 is applied in a radio frequency amplification circuit as an output balun, the first coupling line 110 is used for inputting a first radio frequency signal, the second coupling line 120 is used for inputting a second radio frequency signal, and the phase difference between the first radio frequency signal and the second radio frequency signal can be 180 degrees; the third coupling line 130 is used for outputting a radio frequency signal coupled from the first coupling line 110 and the second coupling line 120, and balanced-unbalanced conversion and impedance matching of the radio frequency signal can be realized. Of course, it is not limited to this, for example, when the balun 100 is applied in a radio frequency amplification circuit as an input balun or an inter-stage matching balun, the third coupling line 130 is used for inputting a radio frequency signal, and the first coupling line 110 and the second coupling line 120 respectively output a radio frequency signal coupled from the third radio frequency line, so as to realize unbalanced-balanced conversion and impedance matching of the radio frequency signal. For the convenience of description, the embodiments of the present application mainly take the first coupling line 110 and the second coupling line 120 connected to the output end of the differential power amplifier as an example to illustrate that the balun 100 performs balanced-unbalanced conversion and impedance matching on the differential radio frequency signal output by the differential power amplifier; wherein the first coupling line 110 and the second coupling line 120 can be referred to as a primary stage, and the third coupling line 130 can be referred to as a secondary stage.

[0375] Referring to FIG. 27, in the circuit structure of the related art balun, the primary stage of the balun is usually an integral whole, connected between the two output ends of the differential power amplifier circuit, and the middle node of the primary stage is grounded, and the secondary stage is coupled with the primary stage. Due to the non-ideality of the middle node of the primary stage, the amplitude-phase balance and the common-mode rejection ratio of the balun are relatively poor.

[0376] Referring to FIG. 25, the balun 100 of the embodiments of the present application can prevent the decrease of the amplitude-phase balance and the common-mode rejection ratio caused by the imbalance of the first coupling line 110 and the second coupling line 120 by setting the first coupling line 110 and the second coupling line 120 not connected. For example, the first coupling line 110 and the second coupling line 120 are more easily set as balanced coupling lines, so that the phase angle difference between the two outputs of the first coupling line 110 and the second coupling line 120 of the balun 100 is closer to 180°; the balun 100 of the embodiments of the present application has higher amplitude balance and phase balance, that is, has higher amplitude-phase balance, and thus has higher common-mode rejection ratio.

[0377] In some embodiments, referring to FIG. 29 in combination with FIG. 28, the balun 100 further comprises a first connection end 101, a second connection end 102, a third connection end 103, and a fourth connection end 104; a first end of the first coupling line 110 is connected to the first connection end 101, a second end of the first coupling line 110 is connected to a first end of the second coupling line 112, and a second end of the second coupling line 112 is grounded; a first end of the third coupling line 121 is connected to the second connection end 102, a second end of the third coupling line 121 is connected to a first end of the fourth coupling line 122, and a second end of the fourth coupling line 122 is grounded; a first end of the fifth coupling line 131 is connected to the third connection end 103, a second end of the fifth coupling line 131 is connected to a first end of the seventh coupling line 133, a second end of the seventh coupling line 133 is connected to a first end of the sixth coupling line 132, and a second end of the sixth coupling line 132 is connected to the fourth connection end 104.

[0378] For example, the first connection end 101 is configured to input a first radio frequency signal, the second connection end 102 is configured to input a second radio frequency signal, and the phase difference between the second radio frequency signal and the first radio frequency signal is 180 degrees. The third connection end 103 is configured to output a radio frequency signal coupled from the first coupling line 110 and the second coupling line 120 by the third coupling line 130. Optionally, the third connection end 103 can be grounded through a capacitor to improve the quality of the radio frequency signal output by the third connection end 103. Optionally, the capacitor can be arranged inside the area surrounded by the coupling lines of the balun 100 to save the occupied area.

[0379] Referring to FIGS. 26a-26d, by arranging the first coupling line 110 to be coupled to the first sub-coupling line 1331 of the third coupling line 130 and the third coupling line 121 of the second coupling line 120 to be coupled to the second sub-coupling line 1332 of the third coupling line 130, the third coupling line 130 can be almost entirely involved in the coupling, the parasitic inductance of the third coupling line 130 can be reduced, the influence of the impedance shift and the loss increase caused by the parasitic inductance can be reduced, and the coupling degree, the amplitude-phase balance, and the loss of the balun 100 can be improved. It should be noted that in various embodiments of the present application, the parasitic inductance of the third coupling line 130 refers to the equivalent inductance of the part of the third coupling line 130 that does not participate in the coupling.

[0380] By dividing the main-stage coupling line into the first coupling line 110 and the second coupling line 120 that are not connected, the layout of the balun 100 can be more flexible. For example, compared to the integrated main-stage coupling line that must extend to the side where the two ports of the secondary-stage coupling line are located, the distance between the two ends of the secondary-stage coupling line, i.e., the third coupling line 130, can be farther apart, which can facilitate the layout of the device.

[0381] In some embodiments, as shown in FIGS. 26a-26d, a first connecting portion 1333 is formed between the first sub-coupling portion 1331 and the second sub-coupling portion 1332, and the length of the first connecting portion 1333 is short, for example, the length S0 of the first connecting portion 1333 is less than or equal to one half of a first preset distance L1, where the first preset distance L1 is the distance between the fifth coupling portion 131 and the sixth coupling portion 132. By shortening the length S0 of the first connecting portion 1333, the parasitic inductance of the third coupling line 130 can be reduced, thereby reducing the effects of impedance shift and loss increase caused by the parasitic inductance, improving the coupling degree, amplitude-phase balance of the balun 100, and reducing the loss of the balun 100.

[0382] As shown in FIG. 26a, by setting the directions in which the plurality of coupling portions in the first coupling line 110, the second coupling line 120, and the third coupling line 130 extend to intersect, the distance between at least some of the coupling portions of the first coupling line 110 and the second coupling line 120 can also be large. The electromagnetic interference between the first coupling line 110 and the second coupling line 120 can be reduced, and the performance of the balun 100 can be improved.

[0383] For example, the distance between the second coupling portion 112 of the first coupling line 110 and the fourth coupling portion 122 of the second coupling line 120 can be represented as a second preset distance L2. For example, as shown in FIGS. 26a-26d, the second preset distance L2 can be the distance between the first end of the second coupling portion 112 and the first end of the fourth coupling portion 122.

[0384] For example, the second preset distance L2 is greater than or equal to one half of the length of the second coupling portion 112, and / or the second preset distance L2 is greater than or equal to one half of the length of the fourth coupling portion 122. This can reduce the electromagnetic interference between the first coupling line 110 and the second coupling line 120, and improve the performance of the balun 100.

[0385] In some embodiments, the second preset distance L2 is less than or equal to 1.1 times the length of the second coupling portion 112, and / or the second preset distance L2 is less than or equal to 1.1 times the length of the fourth coupling portion 122. For example, the second preset distance L2 is less than or equal to the length of the second coupling portion 112, so that the aspect ratio of the balun 100 is more reasonable.

[0386] In some embodiments, the first coupling line 110 is a one-piece coupling line, the second coupling line 120 is a one-piece coupling line, and the third coupling line 130 is a one-piece coupling line. For example, the first coupling line 110, the second coupling line 120, and the third coupling line 130 are each continuous metal traces on the substrate 10 or a chip substrate, which can reduce the complexity of processing.

[0387] In some embodiments, as shown in FIG. 26b, the first coupling line 110 and the second coupling line 120 are arranged in pairs outside the area surrounded by the third coupling line 130; or as shown in FIG. 26a or FIGS. 26c-26d, the first coupling line 110 and the second coupling line 120 are arranged in pairs inside the area surrounded by the third coupling line 130. The first coupling line 110 and the second coupling line 120 are both spaced apart from the third coupling line 130, and the spacing is small, which can improve the coupling degree of the balun 100.

[0388] In some embodiments, as shown in FIG. 26e or FIG. 28, the balun 100 includes multiple pairs of first coupling lines 110 and second coupling lines 120, wherein at least one pair of first coupling lines 110 and second coupling lines 120 is arranged outside the area surrounded by the third coupling line 130; and at least another pair of first coupling lines 110 and second coupling lines 120 is arranged inside the area surrounded by the third coupling line 130.

[0389] In some embodiments, as shown in FIG. 26f or FIG. 28, the balun 100 includes multiple third coupling lines 130, wherein at least one pair of first coupling lines 110 and second coupling lines 120 is arranged between two adjacent third coupling lines 130.

[0390] By arranging multiple pairs of first coupling lines 110 and second coupling lines 120 to be coupled with the third coupling line 130, and / or arranging multiple third coupling lines 130 to be coupled with the first coupling line 110 and the second coupling line 120, the coupling coefficient of the balun can be improved, and the loss of the balun 100 to the radio frequency signal, i.e., the insertion loss, can be reduced.

[0391] For example, as shown in FIG. 29 in combination with FIG. 28, the multiple third coupling lines 130 are connected in parallel, the multiple first coupling lines 110 are connected in parallel, and the multiple second coupling lines 120 are connected in parallel, which can achieve an impedance conversion ratio of approximately 1:1, and further reduce the loss of the balun 100 to the radio frequency signal, i.e., the insertion loss.

[0392] In some embodiments, as shown in FIGS. 26a-26d or FIG. 28, a first connecting part 1333 is formed between the first sub-coupling part 1331 and the second sub-coupling part 1332, and the first sub-coupling part 1331 and the second sub-coupling part 1332 are connected through the first connecting part 1333. For example, the first connecting part 1333, the first sub-coupling part 1331, and the second sub-coupling part 1332 can be integrally arranged, e.g., different parts of the same metal trace. Of course, it is not limited thereto, for example, the first connecting part 1333 can also be a bonding wire, or can be a metal trace arranged on a metal layer different from the metal layer where the first sub-coupling part 1331 and the second sub-coupling part 1332 are arranged, and can be connected to the first sub-coupling part 1331 and the second sub-coupling part 1332 through a metal via hole.

[0393] It can be understood that the parasitic inductance of the third coupling line 130 is mainly the equivalent inductance of the part of the conductor not involved in the coupling. By coupling the first coupling part 111 of the first coupling line 110 with the first sub-coupling part 1331 and coupling the third coupling part 121 of the second coupling line 120 with the second sub-coupling part 1332, most of the conductors of the third coupling line 130 are involved in the coupling with the first coupling line 110 or the second coupling line 120, thereby reducing the parasitic inductance of the third coupling line 130.

[0394] As an implementation manner, the part of the conductor of the third coupling line 130 not involved in the coupling is the first connecting part 1333. Therefore, the parasitic inductance of the third coupling line 130 is mainly the equivalent inductance of the first connecting part 1333. Thus, the length of the first connecting part 1333 can be set to a value as small as possible, for example, the first sub-coupling part 1331 and the second sub-coupling part 1332 can be connected to reduce the parasitic inductance of the third coupling line 130, thereby reducing the influence of the impedance shift and the loss increase caused by the parasitic inductance, improving the coupling degree, the amplitude-phase balance of the balun 100 and reducing the loss of the balun 100.

[0395] For example, referring to FIGS. 26a-26d, the length S0 of the first connecting part 1333 is less than or equal to one-half of the first preset distance L1, and the first preset distance L1 is the distance between the fifth coupling part 131 and the sixth coupling part 132. Preferably, the length of the first connecting part 1333 is less than or equal to one-third of the first preset distance L1. It can be understood that the length of the first connecting part 1333 can be smaller, for example, less than or equal to 1 / 4, 1 / 5, 1 / 6, …, 1 / 10 of the first preset distance L1, which can reach microns, hundreds of nanometers or even tens of nanometers, so as to sufficiently reduce the parasitic inductance of the third coupling line 130 and reduce the influence of the impedance shift and the loss increase caused by the parasitic inductance.

[0396] For example, as shown in FIGS. 26a-26d, the first preset distance L1 is greater than or equal to one-half of the length of the fifth coupling part 131 and / or the first preset distance L1 is greater than or equal to one-half of the length of the sixth coupling part 132. By setting the first preset distance L1 to be greater than one-half of the length of the fifth coupling part 131 or the sixth coupling part 132, the distance between the fifth coupling part 131 and the sixth coupling part 132 can be increased, and the distance between the second coupling part 112 and the fourth coupling part 122 can be increased, so as to reduce the electromagnetic interference between the first coupling line 110 and the second coupling line 120 and improve the performance of the balun 100.

[0397] In some embodiments, the first preset distance L1 is less than or equal to 1.1 times the length of the fifth coupling portion 131, and / or the first preset distance L1 is less than or equal to 1.1 times the length of the sixth coupling portion 132; for example, the first preset distance L1 is less than or equal to the length of the fifth coupling portion 131; so that the aspect ratio of the balun 100 is more reasonable.

[0398] In some embodiments, the balun 100 is formed in the first chip 11 or in an integrated passive device (IPD). The first chip 11 is, for example, an active chip, and the first chip 11 further integrates a radio frequency amplification circuit. By setting the first preset distance L1 to be greater than 1 / 2 of the length of the fifth coupling portion 131 and less than or equal to 1.1 times the length of the fifth coupling portion 131, and / or the first preset distance L1 to be greater than 1 / 2 of the length of the sixth coupling portion 132 and less than or equal to 1.1 times the length of the sixth coupling portion 132; or the second preset distance L2 to be greater than 1 / 2 of the length of the second coupling portion 112 and less than or equal to 1.1 times the length of the second coupling portion 112, and / or the second preset distance L2 to be greater than 1 / 2 of the length of the fourth coupling portion 122 and less than or equal to 1.1 times the length of the fourth coupling portion 122, the aspect ratio of the balun 100 can be made more reasonable, the arrangement in the first chip 11 or the integrated passive device can be facilitated, and the overall area of the first chip 11 or the IPD device can be reduced.

[0399] In some embodiments, as shown in FIGS. 26a-26d, the first end of the first coupling portion 111 is spaced apart from the first end of the third coupling portion 121, and the second end of the first coupling portion 111 is connected to the second coupling portion 112, and the second end of the third coupling portion 121 is connected to the fourth coupling portion 122. The distance between the first end of the first coupling portion 111 and the first end of the third coupling portion 121 (which can be represented as S0) is less than or equal to one-half of the second preset distance L2, and the second preset distance L2 is the distance between the second coupling portion 112 and the fourth coupling portion 122.

[0400] The first sub-coupling portion 1331 is parallel to the first coupling portion 111 and covers the projection of the first coupling portion 111 on the seventh coupling portion 133, and the second sub-coupling portion 1332 is parallel to the third coupling portion 121 and covers the projection of the third coupling portion 121 on the seventh coupling portion 133; so that the balun 100 has higher coupling degree and better quality factor.

[0401] The first sub-coupling part 1331 extends to the second sub-coupling part 1332 and connects with the second sub-coupling part 1332, and / or the second sub-coupling part 1332 extends to the first sub-coupling part 1331 and connects with the first sub-coupling part 1331. That is, the first sub-coupling part 1331 connects with the second sub-coupling part 1332, so that the fifth coupling part 131 and the sixth coupling part 132 of the third coupling line 130 are connected by the seventh coupling part 133 to form a continuous coil on the balun 100.

[0402] For example, the distance S0 between the first end of the first coupling part 111 and the first end of the third coupling part 121 is less than or equal to one third of the second preset distance L2. It can be understood that the distance between the first end of the first coupling part 111 and the first end of the third coupling part 121 can be smaller, for example, less than or equal to 1 / 4, 1 / 5, 1 / 6, 1 / 10 of the second preset distance L2, and can reach microns, hundreds of nanometers or even tens of nanometers, so as to sufficiently reduce the parasitic inductance of the third coupling line 130, and reduce the influence of impedance deviation and loss increase caused by the parasitic inductance.

[0403] In some embodiments, as shown in FIGS. 26a-26d, the second coupling part 112 is parallel to the fifth coupling part 131, the sixth coupling part 132 is parallel to the fourth coupling part 122, and the first coupling part 111, the third coupling part 121 and the seventh coupling part 133 are parallel, so as to ensure a high coupling degree between the coupling parts.

[0404] For example, the angle between the seventh coupling part 133 and the fifth coupling part 131 is greater than or equal to 90 degrees, and the angle between the seventh coupling part 133 and the sixth coupling part 132 is greater than or equal to 90 degrees.

[0405] Optionally, as shown in FIG. 26a or FIG. 26b, the seventh coupling part 133, the fifth coupling part 131, the seventh coupling part 133 and the sixth coupling part 132 are straight line type coupling parts. As shown in FIG. 26a, the angle between the seventh coupling part 133 and the fifth coupling part 131 is 90 degrees, the angle between the seventh coupling part 133 and the sixth coupling part 132 is 90 degrees, and the fifth coupling part 131 is parallel to the sixth coupling part 132. As shown in FIG. 26b, the angle between the seventh coupling part 133 and the fifth coupling part 131 is greater than 90 degrees, the angle between the seventh coupling part 133 and the sixth coupling part 132 is greater than 90 degrees, and the direction in which the fifth coupling part 131 extends can be different from the direction in which the sixth coupling part 132 extends and form an included angle.

[0406] By setting the angle between adjacent coupling parts to be greater than or equal to 90 degrees, the transmission of radio frequency signals on the coupling lines is facilitated, and the insertion loss of the balun 100 can be further reduced.

[0407] Optionally, as shown in FIG. 26b or FIG. 28, an inclined angle transition S or a circular arc transition is arranged between the first coupling part 111 and the second coupling part 112, between the third coupling part 121 and the fourth coupling part 122, between the fifth coupling part 131 and the seventh coupling part 133, and between the seventh coupling part 133 and the sixth coupling part 132. By arranging the inclined angle transition S or the circular arc transition to connect the intersecting coupling parts on the coupling lines, the transmission of the radio frequency signal on the coupling lines can be facilitated, and the insertion loss of the balun 100 can be reduced.

[0408] Optionally, as shown in FIG. 26a, the first coupling line 110 is composed of the first coupling part 111 and the second coupling part 112, the second coupling line 120 is composed of the third coupling part 121 and the fourth coupling part 122, and the third coupling line 130 is composed of the fifth coupling part 131, the seventh coupling part 133, and the sixth coupling part 132. It can be understood that the inclined angle transition S or the circular arc transition shown in FIG. 26b or FIG. 28 can not be arranged. As shown in FIG. 26c or FIG. 26d, by arranging at least part of the coupling parts of the coupling lines as arc-shaped coupling parts, the transmission of the radio frequency signal on the coupling lines can also be facilitated.

[0409] In other examples, as shown in FIG. 26c or FIG. 26d, at least part of the coupling parts of the first coupling line 110, the second coupling line 120, and the third coupling line 130 are arc-shaped coupling parts. The direction in which the arc-shaped coupling part extends can be the tangent direction at the midpoint of the arc-shaped coupling part, or the tangent direction at one end of the arc-shaped coupling part away from other coupling parts in the same coupling line.

[0410] Optionally, as shown in FIG. 26c, the first coupling part 111 is arc-shaped and connected with the second coupling part 112, and the first sub-coupling part 1331 is arc-shaped and connected with the fifth coupling part 131. The third coupling part 121 is arc-shaped and connected with the fourth coupling part 122, and the second sub-coupling part 1332 is arc-shaped and connected with the sixth coupling part 132. The second coupling part 112, the fourth coupling part 122, the fifth coupling part 131, and the sixth coupling part 132 are all linear.

[0411] Optionally, as shown in FIG. 26d, the first coupling part 111 and the second coupling part 112 are integrally arc-shaped, the third coupling part 121 and the fourth coupling part 122 are integrally arc-shaped, and the fifth coupling part 131, the sixth coupling part 132, and the seventh coupling part 133 are integrally arc-shaped.

[0412] Please refer to FIG. 26c or FIG. 26d, taking the tangent direction of the arc-shaped coupling part at the end away from other coupling parts in the same coupling line as an example, the direction in which the first coupling part 111 extends intersects the direction in which the second coupling part 112 extends, the direction in which the third coupling part 121 extends intersects the direction in which the fourth coupling part 122 extends, the direction in which the fifth coupling part 131 extends intersects the direction in which the seventh coupling part 133 extends, and the direction in which the sixth coupling part 132 extends intersects the direction in which the seventh coupling part 133 extends.

[0413] In some embodiments, as shown in FIG. 26a to FIG. 26d, the first coupling line 110 and the second coupling line 120 are symmetrically arranged relative to a preset reference line, and the third coupling line 130 is symmetrically arranged relative to the preset reference line; wherein the preset reference line passes through the center point between the first end of the first coupling part 111 and the first end of the third coupling part 121, and passes through the center point between the second end of the second coupling part 112 and the second end of the fourth coupling part 122. By arranging the first coupling line 110 and the second coupling line 120 and the third coupling line 130 symmetrically, the amplitude balance and the phase balance of the balun 100 can be improved, and thus the common-mode rejection ratio of the balun 100 can be improved.

[0414] Please refer to FIG. 26a to FIG. 26d, by arranging the directions in which the plurality of coupling parts in the first coupling line 110, the second coupling line 120 and the third coupling line 130 extend to intersect, the length of each coupling line in a certain direction (such as the direction in which the second coupling part 112 extends) can be reduced, so that the aspect ratio of the balun 100 is more reasonable, and the balun 100 can be arranged on the chip or the substrate 10 more conveniently, and the occupied area can be saved.

[0415] In some embodiments, as shown in FIG. 28, the balun 100 further includes a second connecting part 105 and a third connecting part 106, the first end of the first coupling part 111 is connected to the first connecting end 101 through the second connecting part 105, and the first end of the third coupling part 121 is connected to the second connecting end 102 through the third connecting part 106. Optionally, as shown in FIG. 28, the first coupling line 110, the second coupling line 120 and the third coupling line 130 are formed in the same metal layer, and the second connecting part 105 and the third connecting part 106 are formed in a metal layer different from the third coupling line 130. Of course, it is not limited thereto, for example, in the case where the first coupling line 110 and the second coupling line 120 are formed in a metal layer different from the third coupling line 130, the second connecting part 105 and the third connecting part 106 can be formed in the same metal layer as the first coupling line 110 and the second coupling line 120.

[0416] The first coupling line 110, the second coupling line 120 and the third coupling line 130 can be arranged reasonably, and the complexity of processing the balun 100 is reduced.

[0417] For example, referring to FIG. 28, the second connecting portion 105 and the third connecting portion 106 are arranged, and the second connecting portion 105 and the third connecting portion 106 extend to the gap between the first coupling portion 111 and the third coupling portion 121, so as to be coupled with the third coupling line 130. The distance between the first end of the first coupling portion 111 and the first end of the third coupling portion 121 is shortened, the parasitic inductance of the third coupling line 130 is reduced, the influence of the parasitic inductance on the impedance shift and the loss increase is reduced, the coupling degree of the balun 100, the amplitude-phase balance and the loss of the balun 100 are improved.

[0418] As an implementation, the distance S1 between the side of the second connecting portion 105 close to the third connecting portion 106 and the side of the third connecting portion 106 close to the second connecting portion 105 is less than or equal to one-eighth of the second preset distance L2, and the second preset distance L2 is the distance between the first end of the second coupling portion 112 and the first end of the fourth coupling portion 122. Optionally, when the balun 100 includes multiple pairs of first coupling lines 110 and second coupling lines 120, the distance S1 between the side of the second connecting portion 105 close to the third connecting portion 106 and the side of the third connecting portion 106 close to the second connecting portion 105 is less than or equal to one-eighth of the smallest second preset distance L2.

[0419] The second connecting portion 105 and the third connecting portion 106 are arranged, so that the distance S1 between the side of the second connecting portion 105 close to the third connecting portion 106 and the side of the third connecting portion 106 close to the second connecting portion 105 is less than the distance S0 between the first end of the first coupling portion 111 and the first end of the third coupling portion 121; the distance between the first end of the first coupling portion 111 and the first end of the third coupling portion 121 is shortened, the parasitic inductance of the third coupling line 130 is reduced, and the influence of the parasitic inductance on the impedance shift and the loss increase is reduced.

[0420] In some embodiments, the first coupling line 110 and the second coupling line 120 are each grounded, for example, the second end of the first coupling line 110 and the second end of the second coupling line 120 are respectively grounded through corresponding bonding wires / bumps / vias; compared with the integrated main-stage middle node grounding in FIG. 27, the embodiments of the present application can make the grounding of the corresponding main-stage coupling lines of the first coupling line 110 and the second coupling line 120 more ideal, and the balun 100 has higher amplitude balance and phase balance to improve the common-mode rejection ratio.

[0421] In some embodiments, the balun 100 is formed in the first chip 11 or in an integrated passive device; the second end of the second coupling part 112 and the second end of the fourth coupling part 122 are grounded through a first grounding mode; and the fourth connecting end 104 is grounded through a second grounding mode. The second grounding mode is different from the first grounding mode, for example, one is grounded through a via and the other is grounded through a bonding wire. Grounding different coupling lines of the balun 100 through different grounding modes can prevent mutual influence between the groundings of the first coupling line 110, the second coupling line 120 and the third coupling line 130, and further improve the common-mode rejection ratio of the balun 100.

[0422] For example, the balun 100 can be formed in the first chip 11 or in an integrated passive device. The second end of the second coupling part 112 is connected to the metal ground of the first chip 11 or the integrated passive device through a first via 107 formed in the first chip 11 or the integrated passive device, and the second end of the fourth coupling part 122 is connected to the metal ground of the first chip 11 or the integrated passive device through a second via 108 formed in the first chip 11 or the integrated passive device. The first via 107 is arranged close to the second end of the second coupling part 112, and the second via 108 is arranged close to the second end of the fourth coupling part 122. The fourth connecting end 104 is connected to the metal ground of the substrate 10 through a bonding wire, and the substrate 10 carries the first chip 11 or the integrated passive device.

[0423] For example, the balun 100 can be formed in the first chip 11 or in an integrated passive device. The second end of the second coupling part 112 is connected to the metal ground of the first chip 11 or the integrated passive device through a first via 107 formed in the first chip 11 or the integrated passive device, and the second end of the fourth coupling part 122 is connected to the metal ground of the first chip 11 or the integrated passive device through a second via 108 formed in the first chip 11 or the integrated passive device. The first via 107 is arranged close to the second end of the second coupling part 112, and the second via 108 is arranged close to the second end of the fourth coupling part 122. The fourth connecting end 104 is connected to the metal ground of the substrate 10 through a bonding wire, and the substrate 10 carries the first chip 11 or the integrated passive device.

[0424] In some embodiments, the fourth connection end 104 is connected to the metal ground of the first chip 11 or the integrated passive device through a third via hole formed in the first chip 11; the second end of the second coupling part 112 and the second end of the fourth coupling part 122 are respectively connected to the metal ground of the substrate 10 through corresponding bonding wires, and the substrate 10 carries the first chip 11 or the integrated passive device. By grounding the different coupling lines of the balun 100 through different grounding ends, the coupling between the ground of the first coupling line 110, the ground of the second coupling line 120 and the ground of the third coupling line 130 can be prevented, so as to improve the performance of the balun 100.

[0425] Of course, in other embodiments, even if the balun 100 is formed in the first chip 11 or in the integrated passive device, the second end of the second coupling part 112, the second end of the fourth coupling part 122 and the second end of the sixth coupling part 132 can be grounded in the same way, for example, all grounded through corresponding vias or all connected to the metal ground on the substrate through corresponding bonding wires, which is not limited in the present application.

[0426] In some embodiments, the balun 100 is formed in the first chip 11 or in the integrated passive device. Referring to FIG. 30, the balun 100 is formed in the first chip 11, which can be an integrated passive device; the first chip 11 is arranged on the substrate 10, and a power amplifier circuit 1201 such as a differential power amplifier circuit is also arranged on the substrate 10; for example, the power amplifier circuit 1201 is integrated in a second chip 12 arranged on the substrate 10. A plurality of connection points including a first connection point and a second connection point are respectively formed on the first connection end 101 and / or the second connection end 102; the first connection point is used to connect the output end of the power amplifier circuit 1201, for example, the output end of the differential power amplifier circuit, and the second connection point is used to connect a power supply end VCC. For example, the power supply end VCC can be arranged at the edge region of the substrate 10 and extended to a predetermined region of the substrate 110 through a trace; the second connection point can be connected to the predetermined region through a bonding wire to connect the power supply end VCC.

[0427] As shown in FIG. 30, the number of first connection points and the number of second connection points are both pluralities, and the plurality of first connection points are arranged as a first column of connection points, and the plurality of second connection points are arranged as a second column of connection points. For example, the projection of the first column of connection points along a predetermined direction at least partially overlaps the second column of connection points, and the predetermined direction is perpendicular to the arrangement direction of the plurality of first connection points. By arranging the plurality of connection points as two columns, the length (e.g., the length in the vertical direction in FIG. 30) of the first connection end 101 and / or the second connection end 102 can be shorter. This facilitates the layout of the first connection end 101 and / or the second connection end 102 in the first chip 11 or the integrated passive device, so that the aspect ratio of the first chip 11 or the integrated passive device can be more ideal.

[0428] In some embodiments, referring to FIG. 29 in combination with FIG. 28, the balun 100 includes a plurality of first coupling lines 110 connected in parallel, and adjacent two first coupling lines 110 are respectively arranged on the outer side and the inner side of the area enclosed by the same third coupling line 130. The balun 100 includes a plurality of second coupling lines 120 connected in parallel, and adjacent two second coupling lines 120 are respectively arranged on the outer side and the inner side of the area enclosed by the same third coupling line 130. By arranging the primary coupling lines of the balun 100 as a plurality of coupling lines connected in parallel, the line width of the primary coupling lines can be equivalent to being increased, the quality factor of the primary coupling lines can be improved, and the secondary coupling lines are arranged on the inner and outer sides of the primary coupling lines, so that the coupling degree between the secondary coupling lines and the primary coupling lines can be enhanced, thereby improving the coupling coefficient of the balun and reducing the insertion loss of the balun 100.

[0429] In some embodiments, the balun 100 includes a plurality of third coupling lines 130 connected in parallel, and at least one first coupling line 110 and at least one second coupling line 120 are arranged between adjacent two third coupling lines 130. By arranging the secondary coupling lines of the balun 100 as a plurality of coupling lines connected in parallel, the line width of the secondary coupling lines can be equivalent to being increased, the quality factor of the secondary coupling lines can be improved, and the primary coupling lines are arranged on the inner and outer sides of the secondary coupling lines, so that the coupling degree between the primary coupling lines and the secondary coupling lines can be enhanced, thereby improving the coupling coefficient of the balun and reducing the insertion loss of the balun 100.

[0430] In some embodiments, the balun 100 includes a plurality of first coupling lines 110 in parallel, a plurality of second coupling lines 120 in parallel, and a plurality of third coupling lines 130 in parallel, wherein each first coupling line 110 and one second coupling line 120 form a pair of primary coupling lines, and are arranged on the same side of the third coupling line 130. The plurality of pairs of primary coupling lines and the plurality of third coupling lines 130 are arranged alternately, i.e., two adjacent pairs of primary coupling lines are arranged on the outer side and the inner side of the area enclosed by the same third coupling line 130, and two adjacent third coupling lines 130 are arranged on the outer side and the inner side of a pair of primary coupling lines. By arranging the primary coupling lines and the secondary coupling lines of the balun 100 as a plurality of coupling lines in parallel in the respective metal layers, the quality factor of the primary coupling lines and the secondary coupling lines can be improved, and the coupling coefficient of the balun 100 can be improved, thereby reducing the insertion loss of the balun 100.

[0431] In some embodiments, the balun 100 includes a plurality of first coupling lines 110 formed on different metal layers, and the plurality of first coupling lines 110 are in parallel; the balun 100 includes a plurality of second coupling lines 120 formed on different metal layers, and the plurality of second coupling lines 120 are in parallel; and the balun 100 includes a plurality of third coupling lines 130 formed on different metal layers, and the plurality of third coupling lines 130 are in parallel. By arranging the primary coupling lines and the secondary coupling lines of the balun 100 as a plurality of coupling lines in parallel on different metal layers, the line width and thickness of the primary coupling lines and the secondary coupling lines can be equivalent to being increased, the quality factor of the primary coupling lines and the secondary coupling lines can be improved, the coupling coefficient of the balun can be improved, and the insertion loss of the balun 100 can be reduced.

[0432] In some embodiments, the balun 100 is formed by a plurality of metal layers, each of the metal layers comprising the first coupling lines 110, the second coupling lines 120 and the third coupling lines 130; the first coupling lines 110 formed in different metal layers are connected in parallel to each other and the projections of the first coupling lines 110 on a preset reference plane at least partially overlap, the second coupling lines 120 formed in different metal layers are connected in parallel to each other and the projections of the second coupling lines 120 on the preset reference plane at least partially overlap, and the third coupling lines 130 formed in different metal layers are connected in parallel to each other and the projections of the third coupling lines 130 on the preset reference plane at least partially overlap; the preset reference plane is parallel to any of the metal layers; wherein each of the metal layers comprises a plurality of the first coupling lines 110 connected in parallel and a plurality of the second coupling lines 120 connected in parallel, and adjacent two of the first coupling lines 110 are arranged on the outer side and the inner side of the area enclosed by the same third coupling line 130 respectively, and adjacent two of the second coupling lines 120 are arranged on the outer side and the inner side of the area enclosed by the same third coupling line 130 respectively; and / or each of the metal layers comprises a plurality of the third coupling lines 130, and at least one of the first coupling lines 110 and at least one of the second coupling lines 120 are arranged between adjacent two of the third coupling lines 130. By arranging a plurality of the first coupling lines 110 connected in parallel, a plurality of the second coupling lines 120 connected in parallel and / or a plurality of the third coupling lines 130 connected in parallel in each of the metal layers, the line width and thickness of the primary coupling lines and the secondary coupling lines in the balun 100 are increased, the quality factor of the primary coupling lines and the secondary coupling lines is improved, and the primary coupling lines are arranged on both sides of the secondary coupling lines and / or the secondary coupling lines are arranged on both sides of the primary coupling lines, the coupling degree between the primary coupling lines and the secondary coupling lines is strengthened, the coupling coefficient of the balun is improved, and the insertion loss of the balun 100 is reduced.

[0433] The balun 100 provided by the embodiment of the present application comprises a first coupling line 110, a second coupling line 120 and a third coupling line 130. The first coupling line 110 comprises a first coupling part 111 and a second coupling part 112, and the extending direction of the first coupling part 111 intersects with the extending direction of the second coupling part 112. The second coupling line 120 comprises a third coupling part 121 and a fourth coupling part 122, and the extending direction of the third coupling part 121 intersects with the extending direction of the fourth coupling part 122. The third coupling line 130 comprises a fifth coupling part 131, a sixth coupling part 132 and a seventh coupling part 133. The seventh coupling part 133 comprises a first sub-coupling part 1331 connected to the fifth coupling part 131 and a second sub-coupling part 1332 connected to the sixth coupling part 132, and the first sub-coupling part 1331 is connected to the second sub-coupling part 1332. The extending direction of the fifth coupling part 131 intersects with the extending direction of the seventh coupling part 133, and the extending direction of the sixth coupling part 132 intersects with the extending direction of the seventh coupling part 133. The first coupling part 111 is coupled to the first sub-coupling part 1331, and the second coupling part 112 is coupled to the fifth coupling part 131. The third coupling part 121 is coupled to the second sub-coupling part 1332, and the fourth coupling part 122 is coupled to the sixth coupling part 132. By arranging the first coupling line 110 and the second coupling line 120 not to be connected, the balun 100 has higher amplitude-phase balance and common-mode rejection ratio.

[0434] By arranging the first coupling part 111 of the first coupling line 110 to be coupled to the first sub-coupling part 1331 of the third coupling line 130 and the third coupling part 121 of the second coupling line 120 to be coupled to the second sub-coupling part 1332 of the third coupling line 130, the third coupling line 130 can be almost entirely involved in coupling, the parasitic inductance of the third coupling line 130 is reduced, the influence of impedance deviation and loss increase caused by the parasitic inductance is reduced, the coupling degree, amplitude-phase balance of the balun 100 are improved, and the loss of the balun 100 is reduced.

[0435] By arranging the extending directions of the plurality of coupling parts in the first coupling line 110, the second coupling line 120 and the third coupling line 130 to intersect, the distance between at least part of the coupling parts of the first coupling line 110 and the second coupling line 120 can be larger. The electromagnetic interference between the first coupling line 110 and the second coupling line 120 can be reduced, the performance of the balun 100 can be improved, and the aspect ratio of the balun 100 can be more reasonable, so that the balun 100 can be arranged on a chip or a substrate 10.

[0436] Please refer to FIG. 31 in combination with the foregoing embodiment. The embodiment of the present application further provides a radio frequency chip, which comprises the balun 100 of the foregoing embodiment. The radio frequency chip can be the first chip 11 or the integrated passive device described above.

[0437] Optionally, the radio frequency chip can be an active chip, as shown in FIG. 31, for example, the radio frequency chip can further include a power amplification circuit 1201 connected with the balun 100. The power amplification circuit 1201 includes but is not limited to a differential power amplification circuit, a balanced power amplification circuit, a Doherty power amplification circuit or other power amplification circuits requiring radio frequency signal synthesis or radio frequency signal decomposition or balanced-unbalanced conversion. Optionally, the balun 100 can be applied in the power amplification circuit 1201 as an input stage balun, an intermediate stage balun or an output stage balun. The balun 100 can ensure a certain coupling degree while having a good quality factor, so as to improve the overall performance of the radio frequency chip when applied to the radio frequency chip.

[0438] For the convenience of description, the embodiments of the present application mainly take the power amplification circuit 1201 as an example of a differential power amplification circuit. The first output end of the differential power amplification circuit is connected with the first coupling line 110 in the balun 100, for outputting a first radio frequency signal to the first coupling line 110; the second output end of the differential power amplification circuit is connected with the second coupling line 120 in the balun 100, for outputting a second radio frequency signal to the second coupling line 120; and the third coupling line 130 in the balun 100 is used for outputting a coupled radio frequency signal coupled from the first coupling line 110 and the second coupling line 120.

[0439] The specific principle and implementation manner of the radio frequency chip provided by the embodiments of the present application are similar to the balun 100 of the foregoing embodiments, which will not be described herein again.

[0440] Please refer to FIG. 32 in combination with the foregoing embodiments, the embodiments of the present application further provide an integrated passive device, which includes the foregoing balun 100. The specific principle and implementation manner of the integrated passive device provided by the embodiments of the present application are similar to the balun 100 of the foregoing embodiments, which will not be described herein again.

[0441] Please refer to FIG. 33 in combination with the foregoing embodiments, the embodiments of the present application further provide a radio frequency power amplifier, which includes a power amplification circuit 1201 and the foregoing balun 100, and the power amplification circuit 1201 is connected with the balun 100.

[0442] In some embodiments, the radio frequency power amplifier further includes a substrate 10, and the power amplification circuit 1201 and the foregoing balun 100 are formed on the substrate 10. Of course, it is not limited thereto, for example, the power amplification circuit 1201 and the foregoing balun 100 are integrated in the same chip.

[0443] In some embodiments, the power amplification circuit 1201 is a differential power amplification circuit. A first output end of the differential power amplification circuit is connected with the first coupling line 110 in the balun 100, for outputting a first radio frequency signal to the first coupling line 110; a second output end of the differential power amplification circuit is connected with the second coupling line 120 in the balun 100, for outputting a second radio frequency signal to the second coupling line 120; and the third coupling line 130 in the balun 100 is used for outputting a coupled radio frequency signal coupled from the first coupling line 110 and the second coupling line 120.

[0444] The specific principle and implementation of the radio frequency power amplifier provided in the embodiments of the present application are similar to the balun 100 of the foregoing embodiments, and thus will not be described herein again.

[0445] Referring to FIG. 34 in combination with the foregoing embodiments, the embodiments of the present application further provide a radio frequency front-end module, which comprises the foregoing balun 100.

[0446] In some embodiments, referring to FIG. 30 in combination with FIG. 35, the radio frequency front-end module comprises a substrate 10 and a first chip 11 and a second chip 12 arranged on the substrate 10, the first chip 11 is formed with the balun 100, and the second chip 12 is formed with the power amplification circuit 1201, the power amplification circuit 1201 being connected with the balun 100.

[0447] In some embodiments, the first chip 11 is an integrated passive device, and the second chip 12 is a heterojunction bipolar transistor chip. By integrating devices of different processes in different chips, the processing complexity of the radio frequency front-end module can be reduced.

[0448] In some embodiments, as shown in FIG. 25, the balun 100 comprises:

[0449] The first coupling line 110 comprises a first coupling portion 111 and a second coupling portion 112, and the extending direction of the first coupling portion 111 intersects with the extending direction of the second coupling portion 112;

[0450] The second coupling line 120 comprises a third coupling portion 121 and a fourth coupling portion 122, and the extending direction of the third coupling portion 121 intersects with the extending direction of the fourth coupling portion 122;

[0451] The third coupling line 130 includes a fifth coupling part 131, a sixth coupling part 132, and a seventh coupling part 133. The seventh coupling part 133 includes a first sub-coupling part 1331 connected to the fifth coupling part 131, and a second sub-coupling part 1332 connected to the sixth coupling part 132. The first sub-coupling part 1331 is connected to the second sub-coupling part 1332. The fifth coupling part 131 extends in a direction intersecting the direction in which the seventh coupling part 133 extends. The sixth coupling part 132 extends in a direction intersecting the direction in which the seventh coupling part 133 extends. The first coupling part 111 is coupled to the first sub-coupling part 1331, and the second coupling part 112 is coupled to the fifth coupling part 131. The third coupling part 121 is coupled to the second sub-coupling part 1332, and the fourth coupling part 122 is coupled to the sixth coupling part 132.

[0452] In some embodiments, the second end of the second coupling part 112 and the second end of the fourth coupling part 122 are grounded by a first grounding mode. The second end of the sixth coupling part 132 is grounded by a second grounding mode.

[0453] For example, the second end of the second coupling part 112 is connected to the metal ground of the first chip 11 through a first via hole 107 formed in the first chip 11. The second end of the fourth coupling part 122 is connected to the metal ground of the first chip 11 through a second via hole 108 formed in the first chip 11. The first via hole 107 is arranged close to the second end of the second coupling part 112. The second via hole 108 is arranged close to the second end of the fourth coupling part 122. The second end of the sixth coupling part 132 is connected to the metal ground of the substrate 10 through a bonding wire. The metal ground of the first chip 11 is connected to the metal ground of the substrate 10.

[0454] For example, the second end of the sixth coupling part 132 is connected to the metal ground of the first chip 11 through a third via hole formed in the first chip 11. The second end of the second coupling part 112 and the second end of the fourth coupling part 122 are respectively connected to the metal ground of the substrate 10 through corresponding bonding wires.

[0455] In some embodiments, the balun 100 further includes a first connection end 101 and a second connection end 102. The first end of the first coupling part 111 is connected to the first connection end 101. The first end of the third coupling part 121 is connected to the second connection end 102. A plurality of connection points are respectively formed on the first connection end 101 and / or the second connection end 102. The plurality of connection points include a first connection point and a second connection point. The first connection point is connected to the output end of the power amplification circuit 1201. The second connection point is connected to the power supply end.

[0456] Exemplarily, the number of the first connection points and the number of the second connection points are both plural; the plural first connection points are arranged as a first column of connection points, and the plural second connection points are arranged as a second column of connection points; and a projection of the first column of connection points along a preset direction at least partially overlaps with the second column of connection points, the preset direction being perpendicular to the arrangement direction of the plural first connection points.

[0457] In some embodiments, the balun 100 includes a plurality of first coupling lines 110 connected in parallel, adjacent two first coupling lines 110 are respectively arranged outside and inside of a same third coupling line 130; the balun 100 includes a plurality of second coupling lines 120 connected in parallel, adjacent two second coupling lines 120 are respectively arranged outside and inside of a same third coupling line 130; and / or the balun 100 includes a plurality of third coupling lines 130 connected in parallel, at least one first coupling line 110 and at least one second coupling line 120 are arranged between adjacent two third coupling lines 130.

[0458] In some embodiments, the balun 100 includes a plurality of first coupling lines 110 formed on different metal layers, the plural first coupling lines 110 are connected in parallel; the balun 100 includes a plurality of second coupling lines 120 formed on different metal layers, the plural second coupling lines 120 are connected in parallel; and the balun 100 includes a plurality of third coupling lines 130 formed on different metal layers, the plural third coupling lines 130 are connected in parallel.

[0459] In some embodiments, the balun 100 is formed on a plurality of metal layers, each metal layer includes a first coupling line 110, a second coupling line 120 and a third coupling line 130; the first coupling lines 110 formed on different metal layers are connected in parallel to each other and at least partially overlap in a preset reference plane, the second coupling lines 120 formed on different metal layers are connected in parallel to each other and at least partially overlap in the preset reference plane, and the third coupling lines 130 formed on different metal layers are connected in parallel to each other and at least partially overlap in the preset reference plane; the preset reference plane is parallel to any metal layer; wherein each metal layer includes a plurality of first coupling lines 110 connected in parallel and a plurality of second coupling lines 120 connected in parallel, and adjacent two first coupling lines 110 are respectively arranged outside and inside of a same third coupling line 130, and adjacent two second coupling lines 120 are respectively arranged outside and inside of a same third coupling line 130; and / or each metal layer includes a plurality of third coupling lines 130 connected in parallel, at least one first coupling line 110 and at least one second coupling line 120 are arranged between adjacent two third coupling lines 130.

[0460] The specific principle and implementation manner of the radio frequency front end module provided by the embodiments of the present application are similar to the balun 100 of the foregoing embodiments, and will not be described here again.

[0461] With the development of the fifth generation mobile communication technology (5G), the requirement for the performance of a radio frequency front-end module is higher and higher. The technical scheme can be applied to the 5G radio frequency front-end module to improve the communication performance of the 5G communication device.

[0462] In at least one of the embodiments of the present application, a radio frequency front-end module is provided, which includes the radio frequency power amplifier in any of the above embodiments or implementation manners.

[0463] In at least one of the embodiments of the present application, an electronic device is provided, which includes the radio frequency front-end module in any of the above embodiments or implementation manners.

[0464] The above only describes the preferred embodiments of the present application. It should be noted that, for those skilled in the art, without departing from the technical principles of the present application, a number of improvements and replacements can be made, which should also be considered as the protection scope of the present application.

Claims

1. A radio frequency power amplifier, characterized in that, include: substrate; The first chip is disposed on the substrate and includes a first differential output terminal, a second differential output terminal, a first differential feed terminal, and a second differential feed terminal. The first balun is disposed on the same wiring layer of the substrate and includes a primary portion and a secondary portion; The primary section includes a first set of primary lines and a second set of primary lines; The secondary portion includes a first set of secondary lines, a second set of secondary lines, and secondary connecting lines. The secondary connecting lines connect the first set of secondary lines and the second set of secondary lines in series. The first set of secondary lines is coupled to the first set of primary lines, and the second set of secondary lines is coupled to the second set of primary lines. A power supply terminal is disposed on the substrate, the first differential feed terminal is connected to the power supply terminal, and the second differential feed terminal is connected to the power supply terminal; The first set of primary lines includes at least two primary lines, the second set of primary lines includes at least two primary lines, and / or the first set of secondary lines includes at least two secondary lines, and the second set of secondary lines includes at least two secondary lines. One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

2. The radio frequency power amplifier according to claim 1, characterized in that, One end of the primary line in the first group of primary lines is connected to the first differential output terminal through the first group of bonding wires, one end of the primary line in the second group of primary lines is connected to the second differential output terminal through the second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through the third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through the fourth group of bonding wires. The fourth set of bonding wires is disposed between the first set of bonding wires and the third set of bonding wires, and the third set of bonding wires is disposed between the second set of bonding wires and the fourth set of bonding wires.

3. The radio frequency power amplifier according to claim 1, characterized in that, One end of the primary line in the first group of primary lines is connected to the first differential output terminal through the first group of bonding wires, one end of the primary line in the second group of primary lines is connected to the second differential output terminal through the second group of bonding wires, the first differential feed terminal is connected to the power supply terminal through the third group of bonding wires, and the second differential feed terminal is connected to the power supply terminal through the fourth group of bonding wires. The second differential feed terminal is disposed between the first differential output terminal and the first differential feed terminal, and the first differential feed terminal is disposed between the second differential output terminal and the second differential feed terminal.

4. The radio frequency power amplifier according to claim 1, characterized in that, It also includes a first inductor connected between the first differential feed terminal and the power supply terminal, and a second inductor connected between the second differential feed terminal and the power supply terminal; The first inductor includes a first portion of traces disposed on the same wiring layer as the first balun on the substrate. The radio frequency signal transmission direction of at least a portion of the first portion of traces is opposite to the radio frequency signal transmission direction of the first set of primary lines, or the radio frequency signal transmission direction of at least a portion of the first portion of traces is opposite to the radio frequency signal transmission direction of the second set of primary lines. The second inductor includes a second portion of traces disposed on the same wiring layer as the first balun on the substrate. The radio frequency signal transmission direction of at least a portion of the second portion of traces is opposite to the radio frequency signal transmission direction of the second set of primary lines, or the radio frequency signal transmission direction of at least a portion of the second portion of traces is opposite to the radio frequency signal transmission direction of the first set of primary lines.

5. The radio frequency power amplifier according to claim 4, characterized in that, The power supply terminal includes a first differential power supply terminal and a second differential power supply terminal. The first differential power supply terminal is located on the side of the first group of primary lines away from the second group of primary lines, and the second differential power supply terminal is located on the side of the second group of primary lines away from the first group of primary lines. The first part of the trace includes a first sub-line that is adjacent to the first group of primary lines relative to other parts, and the radio frequency signal transmission direction of the first sub-line is opposite to the radio frequency signal transmission direction of the first group of primary lines. The second part of the trace includes a second sub-line that is adjacent to the second group of primary lines relative to other parts, and the radio frequency signal transmission direction of the second sub-line is opposite to the radio frequency signal transmission direction of the second group of primary lines.

6. The radio frequency power amplifier according to claim 4, characterized in that, The power supply terminal is disposed between the first group of primary lines and the second group of primary lines. The first portion of the trace is disposed between the second group of primary lines and the second portion of the trace. The radio frequency signal transmission direction of at least a portion of the first portion of the trace is opposite to the radio frequency signal transmission direction of the second group of primary lines. The second portion of the trace is disposed between the first group of primary lines and the first portion of the trace. The radio frequency signal transmission direction of at least a portion of the second portion of the trace is opposite to the radio frequency signal transmission direction of the first group of primary lines.

7. The radio frequency power amplifier according to claim 4, characterized in that, The angle between the radio frequency signal transmission direction of at least a portion of the first portion of the traces and the radio frequency signal transmission direction of the first group of primary lines is greater than 135 degrees, or the angle between the radio frequency signal transmission direction of at least a portion of the first portion of the traces and the radio frequency signal transmission direction of the second group of primary lines is greater than 135 degrees. The angle between the radio frequency signal transmission direction of at least a portion of the second part of the traces and the radio frequency signal transmission direction of the second group of primary lines is greater than 135 degrees, or the angle between the radio frequency signal transmission direction of at least a portion of the second part of the traces and the radio frequency signal transmission direction of the first group of primary lines is greater than 135 degrees.

8. The radio frequency power amplifier according to claim 1, characterized in that, The first set of primary lines includes a first primary line and a second primary line. The first end of the first primary line is connected to the first differential output terminal, and the second end of the first primary line is grounded through a first through hole. The first end of the second primary line is connected to the first differential output terminal, and the second end of the second primary line is grounded through a second through hole. The second set of primary lines includes a third primary line and a fourth primary line. The first end of the third primary line is connected to the second differential output terminal, and the second end of the third primary line is grounded through a third through hole. The first end of the fourth primary line is connected to the second differential output terminal, and the second end of the fourth primary line is grounded through a fourth through hole. The first group of secondary lines includes a first secondary line, which is disposed between the first primary line and the second primary line and coupled to the first primary line and the second primary line respectively. The second group of secondary lines includes a third secondary line, which is disposed between the third primary line and the fourth primary line and coupled to the third primary line and the fourth primary line respectively. The first secondary line and the third secondary line are connected in series through the secondary connection line.

9. The radio frequency power amplifier according to claim 8, characterized in that: The first end of the first primary line is configured to be connected to the signal output terminal, the second end of the first primary line is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the third primary line, and the second end of the third primary line is configured to be grounded. or, The first end of the first primary line is configured to be grounded, the second end of the first primary line is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the third primary line, and the second end of the third primary line is configured to be connected to the signal output terminal.

10. The radio frequency power amplifier according to claim 9, characterized in that, The second end of the third-stage line is grounded through the fifth through hole, and the positions of the third through hole, the fourth through hole and the fifth through hole are not on a straight line.

11. The radio frequency power amplifier according to claim 1, characterized in that, The first set of primary lines includes a first primary line, the first end of which is connected to the first differential output terminal, and the second end of which is grounded through a first through hole; The second set of primary lines includes a third primary line, the first end of which is connected to the second differential output terminal, and the second end of which is grounded through a third through hole; The first group of secondary lines includes a first secondary line and a second secondary line. The first end of the first secondary line is connected to the first end of the second secondary line. The second end of the first secondary line is grounded through a sixth through-hole, and the second end of the second secondary line is grounded through a seventh through-hole. The second group of secondary lines includes a third secondary line and a fourth secondary line. The first end of the third secondary line is connected to the first end of the fourth secondary line. The second end of the third secondary line is grounded through an eighth through-hole, and the second end of the fourth secondary line is grounded through a ninth through-hole. The first primary line is disposed between the first secondary line and the second secondary line, and is coupled to the first secondary line and the second secondary line respectively. The third primary line is disposed between the third secondary line and the fourth secondary line, and is coupled to the third secondary line and the fourth secondary line respectively.

12. The radio frequency power amplifier according to claim 11, characterized in that, The first end of the first primary line is connected to the first differential output terminal via a first set of bonded wires; the first end of the third primary line is connected to the second differential output terminal via a second set of bonded wires; the first end of the first primary line is connected to the first end of the second secondary line via a fifth set of bonded wires; and the first end of the third secondary line is connected to the first end of the fourth secondary line via a sixth set of bonded wires.

13. The radio frequency power amplifier according to claim 1, characterized in that, The first chip includes a first differential transistor and a second differential transistor; The first output terminal of the first differential transistor is connected to the first differential feed terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal. The second output terminal of the second differential transistor is connected to the second differential feed terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal.

14. The radio frequency power amplifier according to claim 13, characterized in that, The first output terminal of the first differential transistor is connected to the first differential output terminal through at least one passive element, and the second output terminal of the second differential transistor is connected to the second differential output terminal through at least one passive element.

15. The radio frequency power amplifier according to claim 14, characterized in that, The first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor.

16. The radio frequency power amplifier according to claim 1, characterized in that, It also includes a third inductor and a third capacitor; The first end of the first group of secondary lines is connected to the first end of the third inductor, the second end of the first group of secondary lines is connected to the first end of the secondary connection line, the second end of the secondary connection line is connected to the first end of the second group of secondary lines, the second end of the second group of secondary lines is configured to be grounded, the second end of the third inductor is connected to the first end of the third capacitor, and the second end of the third capacitor is configured to be grounded. The secondary connection line, the third inductor, and the third capacitor are configured to suppress harmonic signals of the RF power amplifier.

17. The radio frequency power amplifier according to claim 1, characterized in that, The secondary portion further includes a third set of secondary lines and a fourth set of secondary lines. The third set of secondary lines is connected in series with the first set of secondary lines, and the fourth set of secondary lines is connected in series with the second set of secondary lines. The third set of secondary lines and the fourth set of secondary lines are at least partially coupled.

18. The radio frequency power amplifier according to claim 1, characterized in that, The first group of secondary lines extends in the same direction as the first group of primary lines, and the second group of secondary lines extends in the same direction as the second group of primary lines.

19. The radio frequency power amplifier according to claim 1, characterized in that, The first set of secondary lines and the first set of primary lines extend along a first direction, and the second set of secondary lines and the second set of primary lines extend along a second direction. The angle formed by the first direction and the second direction is greater than or equal to 0 degrees and less than or equal to 60 degrees.

20. The radio frequency power amplifier according to claim 1 or 19, characterized in that, The radio frequency power amplifier further includes a third chip, at least a portion of which is located on the side of a virtual straight line facing the first chip. The virtual straight line is the connection between the other end of the first set of primary lines configured to be grounded and the other end of the second set of primary lines configured to be grounded.

21. The radio frequency power amplifier according to claim 20, characterized in that, The third chip includes a radio frequency switch circuit, and the first end of the first group of secondary lines or the first end of the second group of secondary lines is connected to the radio frequency switch circuit in the third chip.

22. A radio frequency power amplifier, characterized in that, include: substrate; A first chip, disposed on the substrate, includes a first differential transistor, a second differential transistor, a first differential output terminal, a second differential output terminal, a first differential feed terminal, and a second differential feed terminal. The first output terminal of the first differential transistor is connected to the first differential feed terminal, and the first output terminal of the first differential transistor is connected to the first differential output terminal through a first series capacitor. The second output terminal of the second differential transistor is connected to the second differential feed terminal, and the second output terminal of the second differential transistor is connected to the second differential output terminal through a second series capacitor. A first balun, disposed on the substrate, includes a primary portion and a secondary portion; The primary section includes a first set of primary lines and a second set of primary lines. One end of the first set of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded. One end of the second set of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded. The secondary portion includes a first set of secondary lines, a second set of secondary lines, and a secondary connecting line. The secondary connecting line connects the first set of secondary lines and the second set of secondary lines in series. The first set of secondary lines is coupled to the first set of primary lines and extends in the same direction. The second set of secondary lines is coupled to the second set of primary lines and extends in the same direction. A power supply terminal is disposed on the substrate, and the first differential power supply terminal is connected to the power supply terminal, and the second differential power supply terminal is connected to the power supply terminal.

23. A radio frequency power amplifier, characterized in that, include: substrate; The first chip is disposed on the substrate and includes a first differential output terminal, a second differential output terminal, a first differential feed terminal, and a second differential feed terminal. The first balun consists of a primary part and a secondary part; The first end of the primary part is connected to the first differential output end through a first set of bonding wires, the second end of the primary part is connected to the second differential output end through a second set of bonding wires, the first differential feed end is connected to the power supply end through a third set of bonding wires, and the second differential feed end is connected to the power supply end through a fourth set of bonding wires. The fourth set of bonding wires is disposed between the first set of bonding wires and the third set of bonding wires, and the third set of bonding wires is disposed between the second set of bonding wires and the fourth set of bonding wires.

24. The radio frequency power amplifier according to claim 23, characterized in that, The second differential feed terminal is disposed between the first differential output terminal and the first differential feed terminal, and the first differential feed terminal is disposed between the second differential output terminal and the second differential feed terminal.

25. The radio frequency power amplifier according to claim 23, characterized in that, The first balun is disposed on the substrate, or the first balun is disposed in the second chip.

26. A radio frequency power amplifier, characterized in that, include: The substrate is provided with a first differential power supply terminal and a second differential power supply terminal; The first chip is disposed on the substrate and includes a first differential output terminal, a second differential output terminal, a first differential feed terminal, and a second differential feed terminal. A first balun, disposed on the substrate, includes a primary portion and a secondary portion, wherein a first end of the primary portion is connected to the first differential output terminal, and a second end of the primary portion is connected to the second differential output terminal; The first inductor has one end connected to the first differential power supply terminal and the other end connected to the first differential feed terminal. The first inductor includes a first sub-trace. The primary portion includes a first primary trace. The first sub-trace and the first primary trace are disposed on the same wiring layer of the substrate and are disposed adjacent to each other. The radio frequency signal transmission direction of the first sub-trace is opposite to the radio frequency signal transmission direction of the first primary trace. The second inductor has one end connected to the second differential power supply terminal and the other end connected to the second differential feed terminal. The second inductor includes a second sub-trace. The primary portion includes a second primary trace. The second sub-trace and the second primary trace are disposed on the same wiring layer of the substrate and are disposed adjacent to each other. The radio frequency signal transmission direction of the second sub-trace is opposite to that of the radio frequency signal transmission direction of the second primary trace.

27. The radio frequency power amplifier according to claim 26, characterized in that, The angle between the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 160 degrees, and the angle between the RF signal transmission direction of the second sub-trace and the RF signal transmission direction of the second primary trace is greater than 160 degrees.

28. A radio frequency power amplifier, characterized in that, include: The substrate is provided with a first differential power supply terminal and a second differential power supply terminal; The first chip is disposed on the substrate and includes a first differential output terminal, a second differential output terminal, a first differential feed terminal, and a second differential feed terminal. The first balun includes a primary part and a secondary part. The first end of the primary part is connected to the first differential output terminal through a first connection path, and the second end of the primary part is connected to the second differential output terminal through a second connection path. A power supply terminal is disposed on the substrate. The first differential power supply terminal is connected to the power supply terminal through a third connection path, and the second differential power supply terminal is connected to the power supply terminal through a fourth connection path. The radio frequency signal transmission direction of at least a portion of the third connection path is opposite to the radio frequency signal transmission direction of at least a portion of the second connection path, or the radio frequency signal transmission direction of at least a portion of the third connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first set of primary lines or the second set of primary lines. The radio frequency signal transmission direction of at least a portion of the fourth connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first connection path, or the radio frequency signal transmission direction of at least a portion of the fourth connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first set of primary lines or the second set of primary lines.

29. A radio frequency power amplifier, characterized in that, include: substrate; A first chip is disposed on the substrate, including a first output terminal; A first transformer is disposed on the substrate and includes a primary portion and a secondary portion. A first end of the primary portion is connected to the first output terminal, and a second end of the primary portion is configured to be grounded or connected to a power supply terminal. A first inductor is connected in the feed path of the RF power amplifier. The first inductor includes a first sub-trace. The primary portion includes a first primary trace. The first sub-trace and the first primary trace are disposed on the same wiring layer of the substrate and are adjacent to each other. The RF signal transmission direction of the first sub-trace is opposite to that of the RF signal transmission direction of the first primary trace.

30. The radio frequency power amplifier according to claim 29, characterized in that, The substrate also includes a power supply terminal; The first chip also includes a first power supply terminal, one end of the first inductor is connected to the power supply terminal, and the other end of the first inductor is connected to the first power supply terminal.

31. The radio frequency power amplifier according to claim 29, characterized in that, The angle between the RF signal transmission direction of the first sub-trace and the RF signal transmission direction of the first primary trace is greater than 135 degrees.

32. The radio frequency power amplifier according to claim 29, characterized in that, The primary portion and the secondary portion extend in the same direction.

33. The radio frequency power amplifier according to claim 29, characterized in that, The first chip includes a first amplifying transistor; The third output terminal of the first amplifying transistor is connected to the first power supply terminal of the first chip, and the third output terminal of the first amplifying transistor is connected to the first output terminal.

34. A radio frequency power amplifier, characterized in that, include: substrate; A first chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal; The first balun consists of a primary part and a secondary part; The primary section includes a first set of primary lines and a second set of primary lines. One end of the first set of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded. The virtual connection formed by one end of the first set of primary lines and the other end of the first set of primary lines extends along a first direction. One end of the second set of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded. The virtual connection formed by one end of the second set of primary lines and the other end of the second set of primary lines extends along the second direction. The secondary portion includes a first set of secondary lines and a second set of secondary lines. The first set of secondary lines and the second set of secondary lines are connected in series. The first set of secondary lines is coupled to the first set of primary lines, and the second set of secondary lines is coupled to the second set of primary lines. The virtual connection formed by one end of the first group of secondary lines and the other end of the first group of secondary lines extends along a first direction, and the virtual connection formed by one end of the second group of secondary lines and the other end of the second group of secondary lines extends along a second direction.

35. The radio frequency power amplifier according to claim 34, characterized in that, The first direction and the second direction are different directions.

36. The radio frequency power amplifier according to claim 35, characterized in that, The first direction is perpendicular to the second direction.

37. The radio frequency power amplifier according to claim 34, characterized in that, The first chip includes a first differential transistor array and a second differential transistor array. The first differential transistor array is arranged along a third direction, and the second differential transistor array is arranged along a fourth direction, wherein the third direction and the fourth direction are different directions. The output terminal of the first differential transistor array is connected to the first differential output terminal, and the output terminal of the second differential transistor array is connected to the second differential output terminal.

38. The radio frequency power amplifier according to claim 34, characterized in that, The first chip includes a first differential transistor array and a second differential transistor array, the first differential transistor array being arranged along a second direction and the second differential transistor array being arranged along a first direction; the output terminal of the first differential transistor array is connected to the first differential output terminal, and the output terminal of the second differential transistor array is connected to the second differential output terminal.

39. The radio frequency power amplifier according to claim 38, characterized in that, One end of the first group of primary lines and one end of the first group of secondary lines are located near the midpoint of the first differential transistor array in the second direction, and one end of the second group of primary lines and one end of the second group of secondary lines are located near the midpoint of the second differential transistor array in the first direction.

40. The radio frequency power amplifier according to claim 34, characterized in that, The first set of primary lines and the first set of secondary lines extend along a first direction, and the second set of primary lines and the second set of secondary lines extend along a second direction.

41. The radio frequency power amplifier according to claim 34, characterized in that, It also includes secondary connection lines, which connect the first group of secondary lines and the second group of secondary lines in series.

42. The radio frequency power amplifier according to claim 41, characterized in that, The first balun is disposed on the substrate, and the first chip is disposed on the substrate by means of an upside-down mounting.

43. The radio frequency power amplifier according to claim 42, wherein the secondary connection line is disposed on the substrate, and the longitudinal projection of the first chip on the substrate at least covers a portion of the secondary connection line.

44. The radio frequency power amplifier according to claim 41, characterized in that, The primary portion, the first set of secondary lines, and the second set of secondary lines are disposed on the substrate, and the secondary connection lines are at least partially disposed on the first chip.

45. The radio frequency power amplifier according to claim 44, characterized in that, One end of the first set of primary wires is connected to the first differential output terminal via the first set of bonded wires, and one end of the second set of primary wires is connected to the second differential output terminal via the second set of bonded wires; One end of the first set of secondary lines is connected to the first end of the secondary connection line in the first chip via the seventh set of bonding wires, and one end of the second set of secondary lines is connected to the second end of the secondary connection line in the first chip via the eighth set of bonding wires.

46. ​​The radio frequency power amplifier according to claim 45, characterized in that, The first set of bonding wires and the seventh set of bonding wires are at least partially coupled, and the second set of bonding wires and the eighth set of bonding wires are at least partially coupled.

47. The radio frequency power amplifier according to claim 34, characterized in that, The first chip also includes a fourth capacitor. One end of the first set of secondary lines is connected to the first end of the fourth capacitor, and the other end of the first set of secondary lines is configured to be grounded. One end of the second set of secondary lines is connected to the second end of the fourth capacitor, and the other end of the second set of secondary lines is configured to be connected to a signal output terminal.

48. The radio frequency power amplifier according to claim 34, characterized in that, The first group of secondary lines and the first group of primary lines are disposed on the same wiring layer of the substrate, and the second group of secondary lines and the second group of primary lines are disposed on the same wiring layer of the substrate.

49. The radio frequency power amplifier according to claim 34, characterized in that, The first set of primary lines and the second set of primary lines are disposed on the first wiring layer of the substrate, and the first set of secondary lines and the second set of secondary lines are disposed on the second wiring layer of the substrate.

50. The radio frequency power amplifier according to claim 34, characterized in that, The first set of primary lines includes at least two primary lines, the second set of primary lines includes at least two primary lines, and / or the first set of secondary lines includes at least two secondary lines, and the second set of secondary lines includes at least two secondary lines. One end of the primary line in the first group of primary lines is configured to be connected to the first differential output terminal, and the other end is configured to be grounded; one end of the primary line in the second group of primary lines is configured to be connected to the second differential output terminal, and the other end is configured to be grounded.

51. The radio frequency power amplifier according to claim 34, characterized in that, Also includes: The power supply terminal is disposed on the substrate. The first chip also includes a first differential power supply terminal and a second differential power supply terminal. The first differential power supply terminal is connected to the power supply terminal through a third connection path, and the second differential power supply terminal is connected to the power supply terminal through a fourth connection path. One end of the first set of primary lines is connected to the first differential output terminal through a first connection path, and one end of the second set of primary lines is connected to the second differential output terminal through a second connection path; The radio frequency signal transmission direction of at least a portion of the third connection path is opposite to the radio frequency signal transmission direction of at least a portion of the second connection path, or the radio frequency signal transmission direction of at least a portion of the third connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first set of primary lines or the second set of primary lines. The radio frequency signal transmission direction of at least a portion of the fourth connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first connection path, or the radio frequency signal transmission direction of at least a portion of the fourth connection path is opposite to the radio frequency signal transmission direction of at least a portion of the first set of primary lines or the second set of primary lines.

52. The radio frequency power amplifier according to claim 51, characterized in that, The first chip also includes a first differential transistor array and a second differential transistor array, wherein the output terminal of the first differential transistor array is connected to a first feed terminal, and the output terminal of the second differential transistor array is connected to a second feed terminal; The output terminal of the first differential transistor array is connected to the first differential output terminal through a first series capacitor, and the output terminal of the second differential transistor array is connected to the second differential output terminal through a second series capacitor.

53. A radio frequency front-end module, characterized in that, Includes the radio frequency power amplifier as described in any one of claims 1-52.

54. An electronic device, characterized in that, Includes the radio frequency front-end module as described in claim 53.

55. A baron, characterized in that, The Baron includes: A first coupling line, comprising a first coupling portion and a second coupling portion, wherein the direction in which the first coupling portion extends intersects the direction in which the second coupling portion extends; The second coupling line includes a third coupling portion and a fourth coupling portion, wherein the direction in which the third coupling portion extends intersects the direction in which the fourth coupling portion extends; The third coupling line includes a fifth coupling portion, a sixth coupling portion, and a seventh coupling portion. The seventh coupling portion includes a first sub-coupling portion connecting the fifth coupling portion and a second sub-coupling portion connecting the sixth coupling portion, and the first sub-coupling portion is connected to the second sub-coupling portion. The direction in which the fifth coupling portion extends intersects the direction in which the seventh coupling portion extends, and the direction in which the sixth coupling portion extends intersects the direction in which the seventh coupling portion extends. Wherein, the first coupling part is coupled to the first sub-coupling part, the second coupling part is coupled to the fifth coupling part; the third coupling part is coupled to the second sub-coupling part, and the fourth coupling part is coupled to the sixth coupling part.

56. The balun according to claim 55, characterized in that, A first connecting portion is formed between the first sub-coupling portion and the second sub-coupling portion, and the first sub-coupling portion and the second sub-coupling portion are connected through the first connecting portion; the length of the first connecting portion is less than or equal to half of a first preset distance, and the first preset distance is the distance between the fifth coupling portion and the sixth coupling portion; or, The first end of the first coupling portion is spaced apart from the first end of the third coupling portion, the second end of the first coupling portion is connected to the second coupling portion, and the second end of the third coupling portion is connected to the fourth coupling portion; the distance between the first end of the first coupling portion and the first end of the third coupling portion is less than or equal to half of a second preset distance, where the second preset distance is the distance between the second coupling portion and the fourth coupling portion; the first sub-coupling portion is parallel to the first coupling portion and covers the projection of the first coupling portion onto the seventh coupling portion, and the second sub-coupling portion is parallel to the third coupling portion and covers the projection of the third coupling portion onto the seventh coupling portion; the first sub-coupling portion extends toward the second sub-coupling portion and connects with the second sub-coupling portion, and / or the second sub-coupling portion extends toward the first sub-coupling portion and connects with the first sub-coupling portion.

57. The balun according to claim 56, characterized in that, The length of the first connecting portion is less than or equal to one-third of the first preset distance; or The distance between the first end of the first coupling part and the first end of the third coupling part is less than or equal to one-third of the second preset distance.

58. The balun according to claim 56, characterized in that, The first preset distance is greater than or equal to half the length of the fifth coupling part, and / or the first preset distance is greater than or equal to half the length of the sixth coupling part; or The second preset distance is greater than or equal to half the length of the second coupling part, and / or the second preset distance is greater than or equal to half the length of the fourth coupling part.

59. The balun according to claim 56, characterized in that, The balun is formed in the first chip or in an integrated passive device; The first preset distance is less than or equal to 1.1 times the length of the fifth coupling part, and / or the first preset distance is less than or equal to 1.1 times the length of the sixth coupling part; or The second preset distance is less than or equal to 1.1 times the length of the second coupling part, and / or the second preset distance is less than or equal to 1.1 times the length of the fourth coupling part.

60. The balun according to any one of claims 55-59, characterized in that, The balun also includes a first connecting end, a second connecting end, a third connecting end, and a fourth connecting end; The first end of the first coupling part is connected to the first connection end, the second end of the first coupling part is connected to the first end of the second coupling part, and the second end of the second coupling part is grounded. The first end of the third coupling part is connected to the second connection end, the second end of the third coupling part is connected to the first end of the fourth coupling part, and the second end of the fourth coupling part is grounded. The first end of the fifth coupling part is connected to the third connecting end, the second end of the fifth coupling part is connected to the first end of the seventh coupling part, the second end of the seventh coupling part is connected to the first end of the sixth coupling part, and the second end of the sixth coupling part is connected to the fourth connecting end.

61. The balun according to claim 60, characterized in that, The balun further includes a second connecting portion and a third connecting portion, wherein a first end of the first coupling portion is connected to the first connecting end through the second connecting portion, and a first end of the third coupling portion is connected to the second connecting end through the third connecting portion; Wherein, the first coupling line, the second coupling line, and the third coupling line are formed in the same metal layer, and the second connection portion, the third connection portion, and the third coupling line are formed in different metal layers; or The first coupling line, the second coupling line, and the third coupling line are formed on different metal layers, while the second connection portion, the third connection portion, the first coupling line, and the second coupling line are formed on the same metal layer.

62. The balun according to claim 61, characterized in that, The distance between the side of the second connecting portion near the third connecting portion and the side of the third connecting portion near the second connecting portion is less than or equal to one-eighth of a second preset distance, whereby the second preset distance is the distance between the first end of the second coupling portion and the first end of the fourth coupling portion.

63. The balun according to claim 60, characterized in that, The balun is formed in the first chip or in an integrated passive device; The second end of the second coupling part and the second end of the fourth coupling part are grounded through a first grounding method; the fourth connection end is grounded through a second grounding method.

64. The balun according to claim 63, characterized in that, The second end of the second coupling portion is connected to the metal ground of the first chip or the integrated passive device through a first via formed in the first chip or the integrated passive device, and the second end of the fourth coupling portion is connected to the metal ground of the first chip or the integrated passive device through a second via formed in the first chip or the integrated passive device; the first via is disposed near the second end of the second coupling portion, and the second via is disposed near the second end of the fourth coupling portion; The fourth connection terminal is connected to the metal ground of the substrate via a bonding wire, and the substrate carries the first chip or the integrated passive device.

65. The balun according to claim 63, characterized in that, The fourth connection terminal is connected to the metal ground of the first chip or the integrated passive device through a third via formed in the first chip; The second end of the second coupling portion and the second end of the fourth coupling portion are respectively connected to the metal ground of the substrate through corresponding bonding wires, and the substrate carries the first chip or the integrated passive device.

66. The balun according to claim 60, characterized in that, The balun is formed on a first chip or in an integrated passive device, and a plurality of connection points are formed on the first connection terminal and / or the second connection terminal, the plurality of connection points including a first connection point and a second connection point; The first connection point is used to connect to the output terminal of the differential power amplifier circuit, and the second connection point is used to connect to the power supply terminal.

67. The balun according to claim 66, characterized in that, The number of the first connection points and the number of the second connection points are both multiple; the multiple first connection points are arranged into a first column of connection points, and the multiple second connection points are arranged into a second column of connection points, and the projection of the first column of connection points along a preset direction at least partially overlaps with the second column of connection points, and the preset direction is perpendicular to the arrangement direction of the multiple first connection points.

68. The balun according to any one of claims 55-59, characterized in that, The second coupling portion is parallel to the fifth coupling portion, and the sixth coupling portion is parallel to the fourth coupling portion; The first coupling part, the third coupling part, and the seventh coupling part are parallel.

69. The balun according to claim 68, characterized in that, The angle between the seventh coupling part and the fifth coupling part is greater than or equal to 90 degrees, and the angle between the seventh coupling part and the sixth coupling part is greater than or equal to 90 degrees.

70. The balun according to claim 69, characterized in that, An angled transition or a circular arc transition is provided between the first coupling part and the second coupling part; an angled transition or a circular arc transition is provided between the third coupling part and the fourth coupling part; an angled transition or a circular arc transition is provided between the fifth coupling part and the seventh coupling part; an angled transition or a circular arc transition is provided between the seventh coupling part and the sixth coupling part. Alternatively, the first coupling line is composed of the first coupling portion and the second coupling portion connected together; the second coupling line is composed of the third coupling portion and the fourth coupling portion connected together; the third coupling line is composed of the fifth coupling portion, the seventh coupling portion and the sixth coupling portion connected together.

71. The balun according to claim 68, characterized in that, At least a portion of the coupling portions of the first coupling line, the second coupling line, and the third coupling line are arc-shaped coupling portions; The direction in which the arc-shaped coupling portion extends includes: the tangential direction of the arc-shaped coupling portion at a preset position, wherein the preset position of the arc-shaped coupling portion includes one end away from other coupling portions in the same coupling line.

72. The balun according to claim 71, characterized in that, The first coupling part is arc-shaped and connected to the second coupling part; the first sub-coupling part is arc-shaped and connected to the fifth coupling part; the third coupling part is arc-shaped and connected to the fourth coupling part; the second sub-coupling part is arc-shaped and connected to the sixth coupling part; the second coupling part, the fourth coupling part, the fifth coupling part, and the sixth coupling part are all straight lines. Alternatively, the first coupling portion and the second coupling portion are integrally formed by an arc; the third coupling portion and the fourth coupling portion are integrally formed by an arc; and the fifth coupling portion, the sixth coupling portion, and the seventh coupling portion are integrally formed by an arc.

73. The balun according to any one of claims 55-59, characterized in that, The first coupling line is an integral coupling line, the second coupling line is an integral coupling line, and the third coupling line is an integral coupling line.

74. The balun according to any one of claims 55-59, characterized in that, The first coupling line and the second coupling line are arranged in pairs outside the area surrounded by the third coupling line, or the first coupling line and the second coupling line are arranged in pairs inside the area surrounded by the third coupling line.

75. The balun according to claim 60, characterized in that, The first coupling line and the second coupling line are symmetrically arranged with respect to the preset reference line, and the third coupling line is symmetrically arranged with respect to the preset reference line. The preset reference line passes through the center point between the first end of the first coupling part and the first end of the third coupling part, and through the center point between the second end of the second coupling part and the second end of the fourth coupling part.

76. The balun according to any one of claims 55-59, characterized in that, The balun includes multiple parallel first coupling lines, with adjacent first coupling lines respectively located outside and inside the area enclosed by the same third coupling line; the balun also includes multiple parallel second coupling lines, with adjacent second coupling lines respectively located outside and inside the area enclosed by the same third coupling line; and / or The balun includes a plurality of parallel third coupling lines, with at least one first coupling line and at least one second coupling line disposed between two adjacent third coupling lines.

77. The balun according to any one of claims 55-59, characterized in that, The balun includes a plurality of first coupling lines formed on different metal layers, the plurality of first coupling lines being connected in parallel; The balun includes a plurality of second coupling lines formed on different metal layers, the plurality of second coupling lines being connected in parallel; The balun includes a plurality of third coupling lines formed on different metal layers, the plurality of third coupling lines being connected in parallel.

78. The balun according to any one of claims 55-59, characterized in that, The balun is formed in multiple metal layers, each of which includes the first coupling line, the second coupling line, and the third coupling line; The first coupling lines formed in different metal layers are connected in parallel and their projections on the preset reference surface at least partially overlap; the second coupling lines formed in different metal layers are connected in parallel and their projections on the preset reference surface at least partially overlap; the third coupling lines formed in different metal layers are connected in parallel and their projections on the preset reference surface at least partially overlap. The preset reference plane is parallel to any of the metal layers; Each of the metal layers includes a plurality of parallel first coupling lines and a plurality of parallel second coupling lines, wherein two adjacent first coupling lines are respectively disposed on the outer and inner sides of the area enclosed by the same third coupling line, and two adjacent second coupling lines are respectively disposed on the outer and inner sides of the area enclosed by the same third coupling line; and / or, each of the metal layers includes a plurality of parallel third coupling lines, wherein at least one first coupling line and at least one second coupling line are disposed between two adjacent third coupling lines.

79. A radio frequency chip, characterized in that, The radio frequency chip includes the balun as described in any one of claims 55-78.

80. An integrated passive device, characterized in that, The integrated passive device includes the balun as described in any one of claims 55-78.

81. A radio frequency power amplifier, characterized in that, The radio frequency power amplifier includes a power amplifier circuit and a balun as described in any one of claims 55-78; The power amplifier circuit is connected to the balun.

82. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes a balun as described in any one of claims 55 to 78.

83. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes a substrate and a first chip and a second chip disposed on the substrate. The first chip has a balun formed thereon, and the second chip has a power amplifier circuit formed thereon. The power amplifier circuit is connected to the balun. The baron includes: A first coupling line, comprising a first coupling portion and a second coupling portion, wherein the direction in which the first coupling portion extends intersects the direction in which the second coupling portion extends; The second coupling line includes a third coupling portion and a fourth coupling portion, wherein the direction in which the third coupling portion extends intersects the direction in which the fourth coupling portion extends; The third coupling line includes a fifth coupling portion, a sixth coupling portion, and a seventh coupling portion. The seventh coupling portion includes a first sub-coupling portion connecting the fifth coupling portion and a second sub-coupling portion connecting the sixth coupling portion, and the first sub-coupling portion is connected to the second sub-coupling portion. The direction in which the fifth coupling portion extends intersects the direction in which the seventh coupling portion extends, and the direction in which the sixth coupling portion extends intersects the direction in which the seventh coupling portion extends. Wherein, the first coupling part is coupled to the first sub-coupling part, the second coupling part is coupled to the fifth coupling part; the third coupling part is coupled to the second sub-coupling part, and the fourth coupling part is coupled to the sixth coupling part.

84. The radio frequency front-end module according to claim 83, characterized in that, The second end of the second coupling part and the second end of the fourth coupling part are grounded through a first grounding method; the second end of the sixth coupling part is grounded through a second grounding method.

85. The radio frequency front-end module according to claim 84, characterized in that, The second end of the second coupling portion is connected to the metal ground of the first chip through a first via formed in the first chip, and the second end of the fourth coupling portion is connected to the metal ground of the first chip through a second via formed in the first chip; the first via is disposed near the second end of the second coupling portion, and the second via is disposed near the second end of the fourth coupling portion; the second end of the sixth coupling portion is connected to the metal ground of the substrate through a bonding wire, and the metal ground of the first chip is connected to the metal ground of the substrate; or, The second end of the sixth coupling portion is connected to the metal ground of the first chip through a third via formed in the first chip; the second ends of the second coupling portion and the second ends of the fourth coupling portion are respectively connected to the metal ground of the substrate through corresponding bonding lines.

86. The radio frequency front-end module according to any one of claims 83-85, characterized in that, The first chip is an integrated passive device, and the second chip is a heterojunction bipolar transistor chip.

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