Reflector and preparation method therefor, and flat lens

Abstract

A reflector and a preparation method therefor, and a flat lens. The reflector (100) comprises a plurality of first film layers (11), and a plurality of second film layers (12), wherein the plurality of first film layers are arranged at intervals in the direction of thickness of the first film layers, each second film layer is disposed between two adjacent first film layers, the plurality of second film layers and the plurality of first film layers are alternately arranged in the direction of thickness of the first film layers, and the second film layers are silicon dioxide film layers.

Description

Mirror and method for manufacturing the same, flat lens

[0001] Cross-reference to Related Applications

[0002] The present application is based on and claims priority to Chinese Patent Application No. 202410853686.2, filed on June 27, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the field of optical imaging technology, in particular to a mirror, a method for manufacturing the same, and a flat lens. BACKGROUND

[0004] In related technologies, an equivalent negative refractive index lens is usually made of glass as a raw material, and then processed after being stacked with multiple layers of film through multiple processes. However, the thickness of the glass is large, which limits the number of films of the equivalent negative refractive index lens of the same size, i.e., the number of lattices is small, which reduces the resolution of the equivalent negative refractive index lens and reduces the use performance. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, one object of the present application is to provide a mirror, which increases the number of lattices of the mirror of the same size by providing a silicon dioxide film layer, thereby improving the resolution of the mirror.

[0006] Another object of the present application is to provide a method for manufacturing the mirror.

[0007] Still another object of the present application is to provide a flat lens using the mirror or manufactured by the method for manufacturing the mirror.

[0008] According to the mirror of the first aspect of the present application, the mirror comprises: a plurality of first film layers, the plurality of first film layers are arranged at intervals along the thickness direction of the first film layer; a plurality of second film layers, each second film layer is arranged between two adjacent first film layers, the plurality of second film layers and the plurality of first film layers are arranged alternately along the thickness direction of the first film layer, and the second film layer is a silicon dioxide film layer.

[0009] According to the mirror of the present application, by using the second film layer, the thickness of each second film layer can be made smaller, and under the condition that the total thickness of the plurality of second film layers and the plurality of first film layers is unchanged, the number of second film layers can be significantly increased to increase the number of lattices of the mirror of the same size, thereby improving the resolution of the mirror and improving the use effect.

[0010] The preparation method of the mirror according to the second aspect of the present application comprises the following steps:

[0011] S1, pretreating a glass carrier;

[0012] S2, using a radio frequency power source with a first power, using aluminum as a target material, and plating a first film layer of the mirror on one side surface of the glass carrier in the thickness direction after the pretreatment in step S1, wherein the first power is P1, and the P1 satisfies 9.5kW≤P1≤10.5kW;

[0013] S3, using a radio frequency power source with a second power, using silicon as a target material, and plating a second film layer on the side surface of the first film layer away from the glass carrier by introducing oxygen to ensure complete oxidation of silicon to form silicon dioxide, wherein the second power is P2, and the P2 satisfies 49.5kW≤P2≤50.5kW;

[0014] S4, repeating steps S2 and S3 to form a plurality of second film layers and a plurality of first film layers; and S5, unloading the glass carrier to obtain the mirror.

[0015] The flat lens according to the third aspect of the present application comprises: two transparent substrates, each of the transparent substrates having two optical surfaces; and two mirrors, the two mirrors being arranged between the two transparent substrates, the mirror being the mirror according to the first aspect of the present application, or the mirror being the mirror made by the preparation method according to the second aspect of the present application.

[0016] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, including the appended drawings.

[0018] Fig. 1 is an assembly schematic view of a mirror and a glass carrier according to an embodiment of the present application;

[0019] Fig. 2 is a process flow diagram of the preparation of a mirror according to an embodiment of the present application;

[0020] Fig. 3 is a schematic view of a flat lens according to an embodiment of the present application;

[0021] Fig. 4 is a schematic view of a reflection unit of a flat lens according to an embodiment of the present application;

[0022] FIG. 5 is a schematic diagram of a first light waveguide array and a second light waveguide array of a flat lens according to an embodiment of the present application;

[0023] FIG. 6 is a schematic diagram of another angle of a reflecting unit of a flat lens according to an embodiment of the present application;

[0024] FIG. 7 is a schematic diagram of a floating real image imaging principle of a flat lens according to an embodiment of the present application;

[0025] FIG. 8 is a schematic diagram of a light ray propagation principle of a flat lens according to an embodiment of the present application;

[0026] FIG. 9 is a schematic diagram of a light ray propagation path of a flat lens according to an embodiment of the present application.

[0027] Reference signs: 100, mirror; 11, first film layer; 12, second film layer; 200, flat lens; 21, first light waveguide array; 22, second light waveguide array; 23, transparent substrate; 24, reflecting unit; 25, reflecting film; 26, adhesive; 3, display light source; 4, floating real image; 5, glass carrier. DETAILED DESCRIPTION

[0028] Embodiments of the present application are described in detail below, and the embodiments described with reference to the accompanying drawings are exemplary. A mirror 100 according to an embodiment of the first aspect of the present application is described below with reference to FIG. 1. The following description of the present application is described in detail with the mirror 100 used in a flat lens 200 as an example, but is not limited thereto.

[0029] As shown in FIG. 1, the mirror 100 according to the first aspect of the present application includes a plurality of first film layers 11 and a plurality of second film layers 12. In the description of the present application, the meaning of "plurality" is two or more.

[0030] Specifically, the plurality of first film layers 11 are arranged at intervals along the thickness direction of the first film layer 11. Each second film layer 12 is arranged between two adjacent first film layers 11, and the plurality of second film layers 12 and the plurality of first film layers 11 are alternately arranged along the thickness direction of the first film layer 11. The second film layer 12 is a silicon dioxide film layer.

[0031] For example, in the example of FIG. 1, along the thickness direction of the first film layer 11, the plurality of first film layers 11 and the plurality of second film layers 12 are alternately arranged on one side of the glass carrier 5, and the outermost layer away from the glass carrier 5 is the second film layer 12. However, it is not limited thereto, for example, the second film layer 12 can be arranged on one side of the glass carrier 5 first, and then the first film layer 11 is arranged, and so on.

[0032] In this way, the plurality of first film layers 11 and the plurality of second film layers 12 are arranged alternately along the thickness direction of the first film layer 11. Compared with the mirror 100 of the prior art (it should be noted that the mirror of the prior art is obtained by stacking multiple film layers on glass, and the number of film layers is the number of lattices), the thickness of the second film layer 12 can be set smaller according to the use requirements, the plurality of first film layers 11 and the plurality of second film layers 12 are stacked, the number of second film layers 12 is increased, the number of lattices of the mirror 100 is increased, the resolution of the mirror 100 is improved, and the use effect of the mirror 100 is improved. That is, by using the second film layer 12, the thickness of each second film layer 12 can be made smaller, the number of second film layers 12 can be significantly increased under the condition that the total thickness of the plurality of second film layers 12 and the plurality of first film layers 11 remains unchanged, and the number of lattices of the mirror 100 of the same size is increased. In addition, the second film layer 12 has the characteristics of high temperature resistance, corrosion resistance and unique optical properties, thereby prolonging the service life of the second film layer 12 and improving the light transmittance of the second film layer 12. Moreover, the second film layer 12 also has a certain structural strength, thereby improving the overall structural strength of the mirror 100. It should be noted that the number of stacked second film layers 12 is the number of lattices of the mirror 100, and the thickness of the second film layer 12 can be set according to the use requirements.

[0033] According to the mirror 100 of the present application, by using the second film layer 12, the thickness of each second film layer 12 can be made smaller, the number of second film layers 12 can be significantly increased under the condition that the total thickness of the plurality of second film layers 12 and the plurality of first film layers 11 remains unchanged, and the number of lattices of the mirror 100 of the same size is increased, thereby improving the resolution of the mirror 100 and improving the use effect.

[0034] According to some embodiments of the present application, referring to FIG. 1, the thickness of the second film layer 12 is d1, wherein d1 satisfies 4.95 μm≤d1≤5.05 μm. For example, when the thickness d1 of the second film layer 12 is less than 4.95 μm, the thickness of the second film layer 12 is small, and the number of the second film layer 12 needs to be increased to achieve the thickness of the required mirror 100, which prolongs the production time of the mirror 100 and increases the production cost of the mirror 100. When the thickness d1 of the second film layer 12 is greater than 5.05 μm, the thickness of the second film layer 12 is large, and the number of the second film layer 12 needs to be reduced to achieve the thickness of the required mirror 100, which reduces the number of lattices of the mirror 100 and reduces the resolution of the mirror 100, which is not convenient for use of the mirror 100. Therefore, by setting the thickness d1 of the second film layer 12 to satisfy 4.95 μm≤d1≤5.05 μm, the thickness of the second film layer 12 is reasonable, and the number of the second film layer 12 is increased under the condition of ensuring the thickness of the mirror 100, which increases the number of lattices of the mirror 100 and improves the resolution of the mirror 100, thereby improving the use performance of the mirror 100. In addition, the production time of the mirror 100 is shortened, and the production cost of the mirror 100 is reduced. For example, d1=5 μm, but not limited thereto.

[0035] According to some embodiments of the present application, referring to FIG. 1, the thickness of the first film layer 11 is d2, wherein d2 satisfies 110 nm≤d2≤120 nm, and / or the first film layer 11 is an aluminum film layer. For example, when the thickness d2 of the first film layer 11 is less than 110 nm, the thickness of the first film layer 11 is small, which may cause part of the visible light refracted by the first film layer 11 to pass through the first film layer 11 or even the mirror 100, thereby reducing the reflectivity of the mirror 100. When the thickness d2 of the first film layer is greater than 120 nm, the amount of material of the first film layer 11 is increased, which increases the production cost of the mirror 100. Therefore, by setting the thickness d2 of the first film layer 11 to satisfy 110 nm≤d2≤120 nm, the thickness of the first film layer 11 is reasonable, and part of the visible light refracted by the first film layer 11 is prevented from passing through the first film layer 11, thereby improving the resolution of the mirror 100. In addition, the amount of material of the first film layer 11 is reduced, and the production cost of the mirror 100 is reduced. Moreover, the structure of the mirror 100 is light and thin, which is convenient for application. For example, d2=110 nm, but not limited thereto.

[0036] According to some embodiments of the present application, the first film layer 11 is an aluminum film layer. Aluminum has a high refractive index, thereby improving the reflectivity of the mirror 100 to light. In addition, aluminum has a high content in the earth's crust, is easy to obtain, and has a low cost, thereby reducing the production cost of the first film layer 11. However, it is not limited thereto. For example, the first film layer 11 can also be a silver film layer.

[0037] According to some embodiments of the present application, the total number of layers of the plurality of first film layers 11 and the plurality of second film layers 12 is c, wherein c satisfies: 11700≤c≤11800. For example, when the total number of layers c of the plurality of first film layers 11 and the plurality of second film layers 12 is less than 11700, the total number of layers of the plurality of first film layers 11 and the plurality of second film layers 12 is small, thereby reducing the number of lattices of the mirror 100 and reducing the resolution of the mirror 100. When the total number of layers c of the plurality of first film layers 11 and the plurality of second film layers 12 is greater than 11800, the total number of layers of the plurality of first film layers 11 and the plurality of second film layers 12 is large, thereby increasing the thickness of the reflective layer, which is not convenient for use of the mirror 100, and also increases the production process of the mirror 100, prolongs the production time of the mirror 100, and increases the production cost of the mirror 100. Therefore, by setting the total number of layers c of the plurality of first film layers 11 and the plurality of second film layers 12 to satisfy 11700≤c≤11800, the total number of layers of the plurality of first film layers 11 and the plurality of second film layers 12 is reasonable, thereby increasing the number of lattices of the mirror 100 and improving the resolution of the mirror 100. In addition, the thickness of the mirror 100 is reduced, the structure of the mirror 100 is light and thin, which is convenient to use, and also reduces the amount of material of the first film layer 11, thereby reducing the production cost of the mirror 100. In addition, the number of lattices of the mirror 100 is increased, and the resolution of the mirror 100 is improved. For example, c=11720, but not limited thereto.

[0038] According to some embodiments of the present application, referring to FIG. 1, the thickness of the mirror 100 is D, wherein D satisfies: 60mm≤D≤61mm. For example, when the thickness D of the mirror 100 is less than 60mm, the thickness of the mirror 100 is small, which increases the difficulty of forming the first film layer 11 and the second film layer 12 under the condition of ensuring the number of lattices of the mirror 100, thereby prolonging the production time of the mirror 100. When the thickness D of the mirror 100 is greater than 61mm, the thickness of the mirror 100 is large, which makes the mirror 100 heavy and reduces the convenience of use of the mirror 100, and also increases the production cost of the mirror 100. Therefore, by setting the thickness D of the mirror 100 to satisfy 60mm≤D≤61mm, the thickness of the mirror 100 is reasonable, which reduces the difficulty of forming the first film layer 11 and the second film layer 12 under the condition of ensuring the number of lattices of the mirror 100, thereby shortening the production time of the mirror 100. In addition, the convenience of use of the mirror 100 is improved, and the production cost of the mirror 100 is reduced. For example, D=60mm, but not limited thereto.

[0039] According to the preparation method of the mirror 100 according to the second aspect of the present application, the method comprises the following steps:

[0040] S1, pretreating the glass carrier 5;

[0041] S2, using a radio frequency power source with a first power, using aluminum as a target material, plating a first film layer 11 of the mirror 100 on one side surface of the glass carrier 5 in the thickness direction after the pretreatment in step S1, the first power being P1, wherein P1 satisfies 9.5kW≤P1≤10.5kW;

[0042] S3, using a radio frequency power source with a first power, using silicon as a target material, plating a second film layer 12 on the side surface of the first film layer 11 away from the glass carrier 5 in step S2 by introducing oxygen to ensure complete oxidation of silicon to form silicon dioxide, the second power being P2, wherein P2 satisfies 49.5kW≤P2≤50.5kW;

[0043] S4, repeating steps S2 and S3 to form a plurality of second film layers 12 and a plurality of first film layers 11;

[0044] S5, unloading the glass carrier 5 to obtain the mirror 100.

[0045] The preparation method of the mirror 100 according to the embodiment of the application alternately plating a plurality of first film layers 11 and a plurality of second film layers 12 on one side of the glass carrier 5 in the thickness direction, and the film plating method is relatively simple, which reduces the production difficulty of the mirror 100. In addition, the first film layer 11 and the second film layer 12 are relatively stable, thereby increasing the use stability of the mirror 100 and prolonging the service life of the mirror 100.

[0046] For example, the preparation method of the mirror 100 includes the following steps:

[0047] S1, the glass carrier 5 is used as a substrate, the glass carrier 5 is placed on a rotating frame of a film plating device, and then the glass carrier 5 is pretreated.

[0048] S2, using a radio frequency power source with a first power P1 of 10kW, using aluminum as a target material, plating a first film layer 11 of the mirror 100 on one side surface of the glass carrier 5 in the thickness direction after the pretreatment in step S1, the thickness d2 of the first film layer 11 being 110nm.

[0049] S3, using a radio frequency power source with a second power P2 of 50kW, using silicon as a target material, plating a second film layer 12 on the side surface of the first film layer 11 away from the glass carrier 5 in step S2 by introducing oxygen to ensure complete oxidation of silicon to form silicon dioxide, the thickness d1 of the second film layer 12 being 5μm.

[0050] S4, repeating steps S2 and S3 to form a plurality of second film layers 12 and a plurality of first film layers 11;

[0051] S5, unloading the glass carrier 5 to obtain the mirror 100.

[0052] In the process of coating, the thickness of the coating is controlled by controlling the change of the coating time. In addition, the glass carrier 5 is pretreated to facilitate the subsequent coating of the first film layer 11 on one side of the glass carrier 5 in the thickness direction, thereby improving the stability of the coating and the stability in the coating process. For example, the coating device can be a double-cavity magnetron sputtering device, which includes a pre-evacuation chamber and a coating chamber. When vacuum maintenance is required in the coating chamber, the unfinished mirror 100 can be placed in the pre-evacuation chamber, facilitating the vacuum maintenance of the coating chamber after the vacuum maintenance of the coating chamber.

[0053] According to some embodiments of the present application, in step S3, the amount of oxygen introduced is C1, wherein C1 satisfies: 45sccm≤C1≤50sccm. For example, when the amount of oxygen introduced C1 is less than 45sccm, the amount of oxygen introduced during the coating process is small, which may result in the inability of silicon to be oxidized to form silicon dioxide, which is not conducive to the coating of the silicon dioxide film layer on the first film layer 11, thereby possibly affecting the lattice number of the mirror 100 and reducing the resolution of the mirror 100. When the amount of oxygen introduced C1 is greater than 50sccm, the amount of oxygen introduced during the coating process is too much, which causes waste of oxygen and is prone to safety hazards. Therefore, by setting the amount of oxygen introduced C1 to satisfy 45sccm≤C1≤50sccm, the amount of oxygen introduced C1 in step S3 is moderate, which not only reasonably utilizes oxygen but also avoids safety hazards. In addition, it is conducive to the coating of the second film layer 12 on the first film layer 11, thereby increasing the lattice number of the mirror 100 and improving the resolution of the mirror 100.

[0054] According to some embodiments of the present application, in step S2, the first film layer 11 is coated by two pairs of targets, each pair of targets is used to form a first sub-film layer (not shown in the figure), a plurality of first sub-film layers are stacked to form the first film layer 11, and the thickness of the first sub-film layer is d3, wherein d3 satisfies: 55nm≤d3≤60nm. For example, when the thickness d3 of the first sub-film layer is less than 55nm, the thickness of the first sub-film layer is small, and a plurality of pairs of targets need to be used for coating. However, when a plurality of pairs of targets are used, it is not easy to control the cumulative thickness, thereby increasing the production difficulty. When the thickness d3 of the first sub-film layer is greater than 60nm, when a plurality of first sub-film layers are stacked by using two pairs of targets, the required thickness of the first film layer 11 is easily exceeded, thereby increasing the difficulty of forming the required thickness of the first film layer 11 and increasing the production difficulty of the mirror 100. Therefore, by setting the thickness d3 of the first sub-film layer to satisfy 55nm≤d3≤60nm, the thickness of the first sub-film layer is reasonably set, and it is easy to accumulate and stack a plurality of first sub-film layers to form the required thickness of the first film layer 11, thereby reducing the production difficulty of the first film layer 11 and helping to improve the production efficiency of the mirror 100. For example, d3=55nm, but not limited thereto.

[0055] According to still another embodiment of the present application, in step S3, the second film layer 12 is plated by twenty pairs of targets, each pair of targets is used to form a second sub-film layer (not shown in the figure), and the second film layer 12 is formed by stacking the second sub-film layers, and the thickness of the second sub-film layer is d4, wherein d4 satisfies 247.5nm≤d4≤252.5nm. For example, when the thickness d4 of the second sub-film layer is less than 247.5nm, the thickness of the second sub-film layer is small, and therefore, when the second film layer 12 is formed to the required thickness, the number of targets needs to be increased to plate the required thickness, the increase of the number of targets increases the difficulty of controlling the required thickness of the second film layer 12, and increases the production difficulty of the mirror 100. When the thickness d4 of the second sub-film layer is greater than 252.5nm, the thickness of the second sub-film layer is large, and when the second film layer 12 is plated by twenty pairs of targets, the required thickness of the second film layer 12 is easily exceeded, which reduces the lattice number of the second film layer 12 and reduces the resolution of the mirror 100. Therefore, by setting the thickness d4 of the second sub-film layer to satisfy 247.5nm≤d4≤252.5nm, the thickness of the second sub-film layer is reasonable, and the second film layer 12 is easily formed by stacking the second sub-film layers plated by twenty pairs of targets to the required thickness of the second film layer 12, which reduces the production difficulty of the second film layer 12 and improves the production efficiency of the mirror 100. For example, d4=250nm, but the present application is not limited thereto.

[0056] According to still another embodiment of the present application, in step S2, the first film layer 11 is plated by two pairs of targets, each pair of targets is used to form a first sub-film layer, and the first film layer 11 is formed by stacking the first sub-film layers, and the thickness of the first sub-film layer is d3, wherein d3 satisfies 55nm≤d3≤60nm. Meanwhile, in step S3, the second film layer 12 is plated by twenty pairs of targets, each pair of targets is used to form a second sub-film layer, and the second film layer 12 is formed by stacking the second sub-film layers, and the thickness of the second sub-film layer is d4, wherein d4 satisfies 247.5nm≤d4≤252.5nm. In this way, the thicknesses of the first film layer 11 and the second sub-film layer are reasonable, which reduces the production difficulty of the first film layer 11 and the second film layer 12 and improves the production efficiency of the mirror 100.

[0057] According to some embodiments of the present application, the pre-treatment includes a first treatment, a second treatment and an ion cleaning, the vacuum degree in the first treatment is less than that in the second treatment. Thus, the first treatment and the second treatment extract air in the pre-extraction chamber as much as possible to ensure the vacuum degree in the film coating chamber, which ensures the oxygen and silicon fully react when the second film layer 12 is coated, facilitates the silicon to be fully oxidized to form the second film layer 12, and improves the yield of the film coating. In addition, the ion cleaning is adopted to remove the pollutants at the molecular level, remove the impurities and particle points on the surface of the glass carrier 5, thereby improving the activity of the surface of the glass carrier 5, facilitating the film coating on the surface of the glass carrier 5, and effectively avoiding the secondary pollution caused by the liquid cleaning medium to the glass carrier 5. It should be noted that the first treatment can also be referred to as rough extraction, the vacuum degree in the pre-extraction chamber after the first treatment is 1.0 Mpa, the second treatment can also be referred to as fine extraction, the vacuum degree in the pre-extraction chamber after the second treatment is 0.2 Mpa, and the time of the first treatment is less than that of the second treatment. In the process of the ion cleaning, the target washing in the film coating chamber is started synchronously to remove the oxides on the surface of the target before the film coating, improve the cleanliness of the target, and avoid pollution.

[0058] According to some embodiments of the present application, the heating temperature of the second treatment is 195℃-200℃; the degassing time is 30min-32min; and / or, the power of the machine in the ion cleaning is P3, wherein P3 satisfies: 0.95kW≤P3≤1.05kW.

[0059] For example, the settings of the heating temperature of the second treatment, the degassing time and the power of the machine in the ion cleaning include the following cases: first, the heating temperature of the second treatment is 195℃-200℃. Second, the degassing time is 30min-32min. Third, the power of the machine in the ion cleaning is P3, wherein P3 satisfies: 0.95kW≤P3≤1.05kW. Fourth, the heating temperature of the second treatment is 195℃-200℃, the degassing time is 30min-32min, and the power of the machine in the ion cleaning is P3, wherein P3 satisfies: 0.95kW≤P3≤1.05kW.

[0060] For example, when the heating temperature of the second treatment is less than 195℃, the heating temperature is low, the strength of air movement is reduced, and the vacuum degree of the second treatment is reduced. When the heating temperature of the second treatment is greater than 200℃, the heating temperature is large, and safety hazards are prone to occur. When the degassing time is less than 30min, the degassing time is short, and air is contained in the film coating chamber, thereby affecting the film coating effect. When the degassing time is greater than 32min, the degassing time is long, and the preparation time of the mirror 100 is prolonged. When the power P3 of the machine in the ion cleaning is less than 0.95kW, the power of the machine in the ion cleaning is small, the working strength of the machine in the ion cleaning is reduced, the cleaning degree of the ion cleaning is reduced, and pollution is prone to occur. When the power P3 of the machine in the ion cleaning is greater than 1.05kW, the power of the machine in the ion cleaning is large, the strength of the ion cleaning is increased, the glass carrier 5 is prone to be damaged, and the stability of the first film layer 11 on the glass carrier 5 is reduced.

[0061] Therefore, by setting the heating temperature of the second treatment to 195℃-200℃, the degassing time to 30min-32min, and the power P3 of the machine in the ion cleaning to 0.95kW≤P3≤1.05kW, the heating temperature of the second treatment is reasonable, the air movement strength is increased under the condition of ensuring safety, the vacuum degree of the second treatment is improved, and the strength and efficiency of the second treatment are also improved. In addition, the degassing time is reasonable, the air contained in the film coating chamber is effectively avoided, the influence on the film coating is reduced, and the production time of the mirror 100 is shortened. In addition, the power of the machine in the ion cleaning is reasonable, the cleaning degree of the cleaning is improved under the condition of ensuring the working strength of the machine in the ion cleaning, damage to the glass carrier 5 is avoided, and the stability of the first film layer 11 on the glass carrier 5 is improved. For example, the heating temperature of the second treatment is 200℃, the degassing time is 30min, and the power P3 of the machine in the ion cleaning is 1kW.

[0062] For example, the specific steps of the preparation method of the mirror 100 are as follows, as shown in FIG. 2:

[0063] S1, the glass carrier 5 is used as a substrate, the thickness of the glass carrier 5 is 1mm, the glass carrier 5 is placed on the rotating frame of the film coating device and enters the pre-evacuation chamber, and then the glass carrier 5 is pretreated,

[0064] The pretreatment process is as follows:

[0065] S1-1, first treatment and second treatment are performed, the heating temperature of the second treatment is 200℃, and the degassing time is 30min;

[0066] S1-2, ion cleaning is performed, the power P3 of the machine in the ion cleaning is 1kW, the target washing in the coating chamber is started synchronously, after the ion cleaning and the target washing are completed, the glass carrier 5 enters the coating chamber.

[0067] S2, the first power P1 is 10kW, the first film layer 11 of the mirror 100 is coated on one side surface of the glass carrier 5 in the thickness direction after the pretreatment in step S1, two pairs of targets are used for coating, each pair of targets is used for coating to form a first sub-film layer, the thickness d3 of the first sub-film layer is 55nm, a plurality of first sub-film layers are stacked to form the first film layer 11, and the thickness d2 of the first film layer 11 is 110nm.

[0068] S3, the second power P2 is 50kW, the second film layer 12 is coated on the side surface of the first film layer 11 away from the glass carrier 5 in step S2, twenty pairs of targets are used for coating, each pair of targets is used for coating to form a second sub-film layer, the thickness d4 of the second sub-film layer is 250nm, a plurality of second sub-film layers are stacked to form the second film layer 12, and the thickness d1 of the second film layer is 5μm.

[0069] S4, the target washing in step S1, step S2 and step S3 are repeated 11720 times, a plurality of second film layers 12 and a plurality of first film layers 11 are formed, and the total thickness of the plurality of first film layers 11 and the plurality of second film layers 12 is 60mm.

[0070] S5, the rotating frame of the coating device returns to the pre-exhaust chamber, then the film is taken out and the film is lowered, the coating is completed, and then the glass carrier 5 is unloaded to obtain the mirror 100.

[0071] It should be noted that the thickness of the glass carrier 5 is not limited to this, and can be specifically set according to the actual use. In the traditional technology, 0.2mm glass is stacked multiple times to obtain a 60mm mirror, and the number of lattices of the mirror is 280-300, while the thickness of the mirror 100 in the present application or the mirror 100 made by the preparation method of the mirror 100 is 60mm, and the number of lattices of the mirror 100 is 11720, which is 39-42 times the number of lattices of the mirror in the traditional technology.

[0072] Optionally, the structure and imaging principle of the flat lens 200 in the present application are described below with reference to FIGS. 3-9, and the specific content is as follows.

[0073] According to the third aspect of the present application, the flat lens 200 includes two transparent substrates 23, each of which has two optical surfaces, and two mirrors 100 arranged between the two transparent substrates 23. The mirror 100 is the mirror 100 according to the first aspect of the present application or the mirror 100 is made by the preparation method of the mirror 100 according to the second aspect of the present application. It should be noted that, in order to facilitate the description of the imaging principle of the flat lens 200, the two mirrors 100 are two optical waveguide unit arrays described below, which include a first optical waveguide array 21 and a second optical waveguide array 22, and the optical waveguide extension directions of the two optical waveguide unit arrays are arranged orthogonally.

[0074] As shown in FIGS. 3-4, the flat lens 200 includes two transparent substrates 23, and a first optical waveguide array 21 and a second optical waveguide array 22 arranged between the two transparent substrates. The first optical waveguide array 21 and the second optical waveguide array 22 are tightly adhered and arranged orthogonally in the same plane. Preferably, the thicknesses of the first optical waveguide array 21 and the second optical waveguide array 22 are the same, which facilitates design and production. Specifically, as shown in FIG. 3, the flat lens 200 includes a first transparent substrate, the first optical waveguide array 21, the second optical waveguide array 22, and a second transparent substrate in sequence from the display light source 3 side to the floating real image 4 side.

[0075] The first transparent substrate and the second transparent substrate each have two optical surfaces, and the transparent substrate 23 has a transmittance of 90%-100% for light with a wavelength of 390-760 nm. The material of the transparent substrate 23 can be at least one of glass, plastic, polymer, and acrylic resin, which is used to protect the optical waveguide array and filter out excess light. It should be noted that if the strength of the first optical waveguide array 21 and the second optical waveguide array 22 after being tightly adhered orthogonally is sufficient, or the installation environment has a thickness limit, only one transparent substrate 23 or no transparent substrate 23 can be configured.

[0076] As shown in FIG. 4, the first light waveguide array 21 and the second light waveguide array 22 are composed of a plurality of rectangular cross-sectioned reflection units 24, the lengths of the reflection units 24 are limited by the peripheral dimensions of the light waveguide arrays and thus vary. The extension direction of the reflection units 24 in the first light waveguide array 21 is X, the extension direction of the reflection units 24 in the second light waveguide array 22 is Y, and the Z direction is the thickness direction of the light waveguide arrays. The extension directions (light waveguide array directions) of the reflection units 24 in the first light waveguide array 21 and the second light waveguide array 22 are perpendicular to each other, that is, from the Z direction (thickness direction), the first light waveguide array 21 and the second light waveguide array 22 are arranged orthogonally, so that two light beams in the orthogonal directions converge at a point, and the object image plane (the light source side and the imaging side) is symmetrical relative to the flat lens 200, equivalent negative refraction phenomenon is generated, and aerial imaging is realized.

[0077] As shown in FIG. 5, the first light waveguide array 21 or the second light waveguide array 22 is composed of a plurality of parallel arranged reflection units 24 which are arranged obliquely at an angle of 45° from the user's perspective. Specifically, the first light waveguide array 21 can be composed of the reflection units 24 which are arranged side by side at an angle of 45° from the lower left direction and have rectangular cross-sections, and the second light waveguide array 22 can be composed of the reflection units 24 which are arranged side by side at an angle of 45° from the lower right direction and have rectangular cross-sections, and the arrangement directions of the reflection units 24 in the two groups of light waveguide arrays can be exchanged. For example, the extension direction of the reflection units 24 in the first light waveguide array 21 is Y, the extension direction of the reflection units 24 in the second light waveguide array 22 is X, and the Z direction is the thickness direction of the light waveguide arrays. From the Z direction (thickness direction), the first light waveguide array 21 and the second light waveguide array 22 are arranged orthogonally, so that two light beams in the orthogonal directions converge at a point, and the object image plane (the light source side and the imaging side) is symmetrical relative to the flat lens 200, equivalent negative refraction phenomenon is generated, and aerial imaging is realized. The light waveguide material has an optical refractive index n1, in some embodiments, n1>1.4, for example, n1 takes values of 1.5, 1.8, 2.0, etc.

[0078] As shown in FIG. 8, for the first light waveguide array 21 and the second light waveguide array 22, there are two interfaces between each reflection unit 24 and its adjacent reflection unit 24, and the interfaces are connected by an adhesive 26 with good light transmission. Preferably, the adhesive 26 can be selected from light-sensitive glue or heat-curing glue, the thickness of the adhesive 26 is T1, and T1>0.001 mm is satisfied, for example, T1=0.002 mm or T1=0.003 mm or T1=0.0015 mm, and the specific thickness can be set according to specific needs. The adhesive 26 is arranged between the adjacent light waveguide arrays in the flat lens 200 and between the light waveguide arrays and the transparent substrate 23, thereby increasing the firmness.

[0079] In some embodiments, the cross section of the reflection unit 24 can be rectangular, and the reflection film 25 is arranged on one side or both sides of the reflection unit 24 in the arrangement direction of the reflection unit 24. Specifically, in the light waveguide array arrangement direction, the reflection film 25 is coated on both sides of each reflection unit 24, and the material of the reflection film 25 can be a metal material such as aluminum, silver, or other non-metallic compound material that can achieve total reflection. The function of the reflection film 25 is to prevent light from entering the adjacent light waveguide array to form stray light and affect imaging due to the lack of total reflection. Alternatively, a dielectric film can be added to the reflection film 25 of each reflection unit 24, and the dielectric film can improve the light reflectivity.

[0080] The cross-sectional width a and the cross-sectional length b of the single reflection unit 24 satisfy 0.1mm≤a≤5mm and 0.1mm≤b≤5mm, and further, in order to obtain better imaging effect, 0.1mm≤a≤2mm and 0.1mm≤b≤2mm. For example, a=0.2mm and b=0.2mm, or a=0.5mm and b=0.5mm. In large screen display, multiple light waveguide arrays can be spliced to meet the large size requirement. The overall shape of the light waveguide array is set according to the application scenario, and in this embodiment, the two groups of light waveguide arrays are in a rectangular structure, and the reflection units 24 at two opposite corners are triangular, and the reflection units 24 in the middle are trapezoidal. The lengths of the single reflection units 24 are different, and the lengths of the reflection units 24 at the corners of the rectangle are the longest, and the lengths of the reflection units 24 at the two ends are the shortest. In addition, the flat panel lens 200 can also include an anti-reflection component and a viewing angle control component. The anti-reflection component can improve the overall transmittance of the flat panel lens 200, and improve the clarity and brightness of the floating real image 4. The viewing angle control component can be used to eliminate the afterimage of the floating real image 4, reduce the dizziness of the observer, and prevent the observer from peeping into the device from other angles, and improve the overall aesthetics of the device. The anti-reflection component and the viewing angle control component can be combined, or they can be independently arranged between the transparent substrate 23 and the waveguide array, between the two waveguide arrays, or on the outer layer of the transparent substrate 23.

[0081] Specifically, the aerial imaging principle of the floating real image of the present application is as follows:

[0082] On the micron scale, the array structure of the mutually orthogonal double-layer waveguide is used to orthogonally decompose any optical signal. The original signal is projected on the first optical waveguide array 21, and a rectangular coordinate system is established with the original signal projection point as the origin and the first optical waveguide array 21 as the x-axis. In the rectangular coordinate system, the original signal is decomposed into two mutually orthogonal signals, signal X on the x-axis and signal Y on the y-axis. When signal X passes through the first optical waveguide array 21, it is totally reflected on the surface of the reflecting film 25 according to the same reflection angle as the incident angle. At this time, signal Y remains parallel to the first optical waveguide array 21 and passes through the first optical waveguide array 21, and then is totally reflected on the surface of the reflecting film 25 according to the same reflection angle as the incident angle on the surface of the second optical waveguide array 22. The reflected signal Y and the signal X form a reflected optical signal which is mirror-symmetric to the original optical signal. Therefore, any light ray passing through the flat panel lens 200 can achieve mirror symmetry, and the divergent light of any light source passing through the flat panel lens 200 will converge into a floating real image 4 at the symmetric position. The imaging distance of the floating real image 4 is the same as the distance between the flat panel lens 200 and the image source, i.e., the display light source 3, which is an equal-distance imaging. Moreover, the floating real image 4 is in the air and does not need a specific carrier, but directly appears as a real image in the air. Therefore, the image in space seen by the user is the image emitted by the display light source 3.

[0083] In the embodiment of the present application, the light emitted by the display light source 3 passes through the flat panel lens 200 and the above-mentioned process occurs on the flat panel lens 200. Specifically, as shown in FIG. 8, the incident angles of the light rays on the first optical waveguide array 21 are α1, α2 and α3, respectively, and the reflection angles of the light rays on the first optical waveguide array 21 are β1, β2 and β3, respectively, where α1=β1, α2=β2 and α3=β3. After reflection by the first optical waveguide array 21, the incident angles of the light rays on the second optical waveguide array 22 are γ1, γ2 and γ3, respectively, and the reflection angles of the light rays on the second optical waveguide array 22 are δ1, δ2 and δ3, respectively, where γ1=δ1, γ2=δ2 and γ3=δ3.

[0084] Further, the incident angles of the converged images are α1, α2, α3…α n The distance between the light source of the display light source 3 and the flat panel lens 200 is L, and the imaging position of the floating real image is also L from the flat panel lens 200. Moreover, the visual angle ε of the floating real image 4 is 2 times max(α).

[0085] It can be understood that if the size of the optical waveguide array is small, the image can only be seen at a certain distance from the imaging side of the optical waveguide array. If the size of the optical waveguide array is large, a larger imaging distance can be achieved, thereby increasing the field of view.

[0086] Preferably, the included angle between the flat lens 200 and the display light source 3 is set to the range of 45°±5°, so that the size of the flat lens 200 can be effectively utilized, the imaging quality is improved, and the residual image effect is reduced. In addition, if there are other requirements for the imaging position, other angles can also be selected at the expense of part of the imaging quality. Preferably, the size of the flat lens 200 is set to be able to display the entire picture of the floating real image 4 presented by the display light source 3. However, if only part of the picture of the display light source 3 needs to be seen in actual use, the size and position of the flat lens 200 can also be freely adjusted according to the actual display picture, which is not limited.

[0087] In addition, the above mainly describes the imaging principle of the flat lens 200 with a double-layer optical waveguide array structure. In other embodiments, if the four peripheral surfaces are all set as a plurality of cubic columnar reflection units 24 with a reflection film 25, and the plurality of cubic columnar reflection units 24 are all arranged in an array along the X and Y directions in one layer of optical waveguide array structure, that is, two layers of optical waveguide arrays are combined into one layer, the imaging principle is the same as that of the double-layer optical waveguide array structure, and can also be used as the structure of the flat lens 200.

[0088] In the embodiments, the thicknesses of the first optical waveguide array 21 and the second optical waveguide array 22 are the same, so that the complexity of the structures of the first optical waveguide array 21 and the second optical waveguide array 22 can be simplified, the manufacturing difficulty of the first optical waveguide array 21 and the second optical waveguide array 22 is reduced, the production efficiency of the first optical waveguide array 21 and the second optical waveguide array 22 is improved, and the production cost of the first optical waveguide array 21 and the second optical waveguide array 22 is reduced. It should be noted that the thicknesses here are a relative range, not an absolute same, that is, for the purpose of improving the production efficiency, there can be a certain thickness difference between the optical waveguide arrays without affecting the aerial imaging quality.

[0089] According to some embodiments of the present application, the imaging mode of the display light source 3 can include an RGB (red, green, and blue) light emitting diode (Light Emitting Diode, LED), an LCD (Liquid Crystal Display), an LCOS (Liquid Crystal on Silicon) device, an OLED (Organic Light-Emitting Diode) array, a projection, a laser, a laser diode, or any other suitable display or stereoscopic display, which is not limited.

[0090] The other configurations and operations of the mirror 100 and the flat lens 200 according to the embodiments of the present application are known to those skilled in the art, and will not be described in detail here.

[0091] In the description of the present application, it should be understood that the terms "thickness", "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation to the present application.

[0092] In the description of the present application, the description referring to the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example.

[0093] Although the embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A mirror, comprising: a plurality of first film layers, the plurality of first film layers being arranged in intervals along a thickness direction of the first film layers; a plurality of second film layers, each of the second film layers being arranged between two adjacent first film layers, the plurality of second film layers and the plurality of first film layers being arranged alternately along the thickness direction of the first film layers, the second film layers being silicon dioxide film layers.

2. The mirror of claim 1, wherein, The thickness of the second film layer is d1, wherein the d1 satisfies: 4.95 μm≤d1≤5.05 μm.

3. The mirror of claim 2, wherein, The thickness of the first film layer is d2, wherein the d2 satisfies: 110 nm≤d2≤120 nm; and / or The first film layer is an aluminum film layer.

4. The mirror according to any one of claims 1-3, wherein, The total number of layers of the plurality of first film layers and the plurality of second film layers is c, wherein the c satisfies: 11700≤c≤11800.

5. The mirror according to any one of claims 1-4, wherein, The thickness of the mirror is D, wherein the D satisfies: 60 mm≤D≤61 mm.

6. A method for manufacturing a mirror, comprising the following steps: S1, pretreating a glass carrier; S2, using a radio frequency power source with a first power, using aluminum as a target material, and plating a first film layer of the mirror on one side surface of the glass carrier in the thickness direction of the glass carrier after the pretreatment in step S1, the first power being P1, wherein the P1 satisfies: 9.5 kW≤P1≤10.5 kW; S3, using a radio frequency power source with a second power, using silicon as a target material, and plating a second film layer on the side surface of the first film layer away from the glass carrier by introducing oxygen to ensure complete oxidation of silicon to form silicon dioxide, the second power being P2, wherein the P2 satisfies: 49.5 kW≤P2≤50.5 kW; S4, repeating steps S2 and S3 to form a plurality of second film layers and a plurality of first film layers; S5, unloading the glass carrier to obtain the mirror.

7. The method of producing a mirror according to claim 6, wherein In step S3, the amount of oxygen introduced is C1, wherein the C1 satisfies: 45 sccm≤C1≤50 sccm.

8. The method of producing a mirror according to claim 6 or 7, wherein In step S2, the first film layer is plated using two pairs of targets, each pair of targets is used to form a first sub-film layer, a plurality of first sub-film layers are stacked to form the first film layer, and the thickness of the first sub-film layer is d3, wherein the d3 satisfies: 55 nm≤d3≤60 nm; and / or In step S3, the second film layer is plated using twenty pairs of targets, each pair of targets is used to form a second sub-film layer, a plurality of second sub-film layers are stacked to form the second film layer, and the thickness of the second sub-film layer is d4, wherein the d4 satisfies: 247.5 nm≤d4≤252.5 nm.

9. The method of producing a mirror according to any one of claims 6 to 8, wherein The pretreatment includes a first treatment, a second treatment, and an ion cleaning, the vacuum degree in the first treatment is less than the vacuum degree in the second treatment.

10. The method of producing a mirror according to claim 9, wherein The heating temperature of the second treatment is 195℃-200℃; the degassing time is 30 min-32 min; and / or The power of the machine in the ion cleaning is P3, wherein the P3 satisfies: 0.95 kW≤P3≤1.05 kW.

11. A flat lens, comprising: two transparent substrates, each of the transparent substrates having two optical faces; two mirrors, the two mirrors being arranged between the two transparent substrates, the mirrors being mirrors according to any one of claims 1 to 5, or the mirrors being mirrors made using a production method according to any one of claims 6 to 10.