Plating device

Abstract

The present invention provides a plating device. This plating device comprises a plating tank, a substrate holder, an anode, at least one resistor which is for adjusting an electric field, which is disposed between the anode and the substrate holder, and which includes a plurality of through holes that are in communication with the anode side and the substrate holder side, and a resistance member which is for adjusting the electric field and which is disposed between the anode and the substrate holder, wherein the resistance member includes an introduction port through which a fluid is introduced, is configured such that the volume of the fluid in the resistance member is varied by varying the amount or pressure of the fluid, and is installed on a surface of the at least one resistor which is the closest to the anode so as not to close the plurality of through holes.

Description

Plating Equipment

[0001] The present application relates to a plating apparatus.

[0002] One example of a plating apparatus using electroplating is a so-called dip-type plating apparatus in which a substrate (e.g., a semiconductor wafer) and an anode are arranged horizontally facing each other (see, for example, Patent Document 1). Another example of a plating apparatus using electroplating is a cup-type plating apparatus (see, for example, Patent Document 2). In the cup-type plating apparatus, a substrate held by a substrate holder is immersed in a plating solution with the surface to be plated facing downward, and a voltage is applied between the substrate and the anode to deposit a conductive film (plating film) on the surface of the substrate.

[0003] In such plating apparatuses, the substrate generally has an electrical contact on its periphery. Due to differences in distance from the electrical contact, a potential difference occurs between the periphery and center of the substrate during plating, which can result in a bias in the plating current. For this reason, it has been known to place a resistor for adjusting the electric field between the substrate and the anode to improve the uniformity of the thickness of the plating film formed on the substrate. Furthermore, a plating apparatus has been proposed in which the size of the resistor hole is variable to allow for greater freedom in adjusting the electric field (see Patent Document 3).

[0004] Patent No. 7462125 Patent No. 7079388 Patent No. 7204060

[0005] In plating equipment, uneven plating film thickness can occur due to factors other than the distance from the electrical contacts, such as the resist pattern formed on the substrate. In other words, if the substrate surface to be plated contains a certain number of areas without resist openings (non-opening areas), the plating current does not flow through the non-opening areas, and instead concentrates around the non-opening areas, resulting in a thicker plating film. As a specific example, if resist openings are formed only in a roughly cross-shaped area on the substrate, the area outside the cross does not have resist openings and current does not flow, potentially resulting in a loss of uniformity in the thickness of the plating film. For example, Patent Document 1 uses an anode mask with adjustable anode opening dimensions to adjust the electric field between the anode and the substrate. However, conventional configurations are designed to address variations in plating film thickness due to the configuration of the plating equipment, such as electrical contacts, and may not adequately address variations in plating film thickness due to the resist pattern on the substrate. While forming dummy openings in the non-opening areas to achieve uniform plating film thickness is conceivable, this increases plating process costs due to the additional processing required to form the dummy openings and the formation of unnecessary plating in the dummy openings.

[0006] The present invention has been made in view of the above problems, and one of its objects is to propose a plating apparatus that can improve the uniformity of the thickness of a plating film formed on an object to be plated.

[0007] According to one aspect of the present invention, there is provided a plating apparatus comprising: a plating tank; a substrate holder configured to hold a substrate; an anode disposed in the plating tank facing the substrate held by the substrate holder; at least one resistor for adjusting an electric field disposed between the anode and the substrate holder, each of the at least one resistor having a plurality of through-holes communicating with the anode side and the substrate holder side; and a resistive element for adjusting the electric field disposed between the anode and the substrate holder, the resistive element having an inlet for introducing a fluid and configured such that its volume changes by changing the amount or pressure of the fluid therein, the resistive element being disposed so as not to block the plurality of through-holes on a surface of the at least one resistor closest to the anode.

[0008] FIG. 1 is a perspective view showing the overall configuration of a plating apparatus according to a first embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus according to the first embodiment. FIG. 3 is a longitudinal sectional view schematically showing the configuration of a plating module according to the first embodiment. FIG. 4 is an enlarged bottom view schematically showing the surface of the resistor element closest to the anode according to the first embodiment. FIG. 5 is a schematic plan view of a resistance element. FIG. 6 is a conceptual diagram illustrating the electric field around a resistance element in a contracted state. FIG. 7 is a conceptual diagram illustrating the electric field around a resistance element in an expanded state. FIG. 8 is a flowchart showing an example of a method for setting an operation recipe for a resistance element, an anode mask, and a shield using a control module. FIG. 9 is a diagram schematically showing a resist pattern formed on a surface to be plated of a substrate according to an embodiment. FIG. 10 is a flowchart showing an example of a method for setting an operation recipe for a resistance element, an anode mask, and a shield using a control module during a plating process. FIG. 11 is a longitudinal sectional view schematically showing a resistance element according to a modified example 1-1 in a contracted state. FIG. 12 is a longitudinal sectional view schematically showing a resistance element according to a modified example 1-1 in an expanded state. FIG. 13 is a longitudinal sectional view schematically showing a resistance member of Modification 1-2 in a contracted state. FIG. 14 is a longitudinal sectional view schematically showing a resistance member of Modification 1-2 in an expanded state. FIG. 15 is a longitudinal sectional view schematically showing a configuration of a plating module of a second embodiment. FIG. 16 is a longitudinal sectional view schematically showing a configuration of a plating module of Modification 2. FIG. 17 is a longitudinal sectional view schematically showing a configuration of a plating module of a third embodiment having a resistance member in a contracted state. FIG. 18 is a longitudinal sectional view schematically showing a configuration of a plating module of a third embodiment having a resistance member in an expanded state.

[0009] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, identical or corresponding components are designated by the same reference numerals, and redundant description will be omitted.

[0010] First Embodiment <Overall Configuration of Plating Apparatus> Fig. 1 is a perspective view showing the overall configuration of a plating apparatus 1000 of this embodiment. Fig. 2 is a plan view showing the overall configuration of the plating apparatus 1000. As shown in Figs. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.

[0011] The load port 100 is a module for loading substrates, which are objects to be plated and are stored in cassettes such as FOUPs (not shown), into the plating apparatus 1000, and for unloading substrates from the plating apparatus 1000 to the cassettes. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of the load ports 100 are optional. The transfer robot 110 is a robot for transporting substrates, and is configured to transfer substrates between the load ports 100, the aligner 120, and the transfer device 700. When transferring substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrates via a temporary stage (not shown).

[0012] The aligner 120 is a module for aligning the positions of the substrate's orientation flat, notch, and the like in a predetermined direction. In this embodiment, two aligners 120 are arranged horizontally, but the number and arrangement of the aligners 120 are optional. The prewet module 200 wets the surface of the substrate to be plated with a treatment liquid (prewet liquid) such as pure water or degassed water before plating, thereby replacing air inside the pattern formed on the substrate surface with the treatment liquid. The prewet module 200 is configured to perform a prewet process during plating, replacing the treatment liquid inside the pattern with a plating liquid to facilitate the supply of plating liquid inside the pattern. In this embodiment, two prewet modules 200 are arranged vertically, but the number and arrangement of the prewet modules 200 are optional.

[0013] The presoak module 300 is configured to perform a presoak process, which involves etching away, for example, an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid to clean or activate the surface of the substrate to be plated. In this embodiment, two presoak modules 300 are arranged vertically, but the number and arrangement of the presoak modules 300 are optional. The plating module 400 performs plating on the substrate. In this embodiment, two sets of 12 plating modules 400 are arranged vertically, three vertically and four horizontally, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are optional.

[0014] The cleaning module 500 is configured to perform a cleaning process on the substrate to remove plating solution and the like remaining on the substrate after plating. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are optional. The spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged vertically, but the number and arrangement of the spin rinse dryers are optional. The transport device 700 is a device for transporting substrates between multiple modules within the plating apparatus 1000. The control module 800 is configured to control the multiple modules of the plating apparatus 1000 and can be configured, for example, as a general computer or a dedicated computer equipped with an input / output interface with an operator.

[0015] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the load port 100. Next, the transfer robot 110 removes the substrate from the cassette in the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation flat, notch, etc. of the substrate to a predetermined direction. The transfer robot 110 delivers the substrate, whose direction has been aligned by the aligner 120, to the transfer apparatus 700.

[0016] The transfer device 700 transfers the substrate received from the transfer robot 110 to the prewet module 200. The prewet module 200 performs a prewet process on the substrate. The transfer device 700 transfers the substrate that has been subjected to the prewet process to the presoak module 300. The presoak module 300 performs a presoak process on the substrate. The transfer device 700 transfers the substrate that has been subjected to the presoak process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0017] The transfer device 700 transfers the substrate that has been plated to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate that has been cleaned to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrate. The transfer device 700 delivers the substrate that has been dried to the transfer robot 110. The transfer robot 110 transfers the substrate received from the transfer device 700 to a cassette on the load port 100. Finally, the cassette containing the substrate is removed from the load port 100.

[0018] <Configuration of Plating Module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a longitudinal cross-sectional view schematically showing the configuration of the plating module 400 of this embodiment. As shown in FIG. 3, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating tank 410 includes a cylindrical inner tank 412 with an open top, and an outer tank 414 provided around the inner tank 412 so as to collect plating solution that overflows from the upper edge of the inner tank 412.

[0019] The plating module 400 includes a substrate holder 440 for holding the substrate Wf with its plating surface Wf-a facing downward. The substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The plating module 400 also includes a lifting mechanism 442 for raising and lowering the substrate holder 440. The plating module 400 also includes a rotation mechanism 448 for rotating the substrate holder 440 around a rotation axis Ax during plating. This rotation axis Ax preferably coincides with the central axis of the plating module 400. In the inner tank 412, an anode 430, an anode mask 426, and other components, which will be described later, are arranged coaxially around the central axis of the plating module 400. Hereinafter, the terms "radial direction" and "circumferential direction" refer to the radial and circumferential directions relative to the rotation axis Ax. The Z axis is defined parallel to the rotation axis Ax, and the X and Y axes are defined perpendicular to the Z axis and are orthogonal to each other. The lifting mechanism 442 and the rotation mechanism 448 can be realized by known mechanisms such as a motor.

[0020] The plating apparatus 1000 is a cup-type electrolytic plating apparatus that immerses a substrate Wf (e.g., a semiconductor wafer) held by a substrate holder 440 in a plating solution with its surface Wf-a facing downward, and deposits a conductive film on the surface of the substrate Wf by applying a voltage between the substrate Wf and an anode 430. In one embodiment, plating is performed while the substrate Wf is being rotated, thereby making the thickness of the plating formed on the substrate Wf more uniform.

[0021] The plating module 400 includes a membrane 420 that vertically separates the interior of the inner tank 412. The interior of the inner tank 412 is divided by the membrane 420 into a cathode region 422 and an anode region 424. The cathode region 422 and the anode region 424 are each filled with a plating solution. Note that, although an example in which the membrane 420 is provided has been shown in this embodiment, the membrane 420 need not be provided.

[0022] An anode 430 is provided on the bottom surface of the inner tank 412 in the anode region 424. The anode 430 is disposed in the plating tank 410 so as to face the substrate Wf. An anode mask 426 for adjusting the electric field between the anode 430 and the substrate Wf is also disposed in the anode region 424. The anode mask 426 is, for example, a substantially plate-shaped member made of a dielectric material, and is provided in front of (above) the anode 430. The anode mask 426 has an anode opening 427, which is an opening through which a current flows between the anode 430 and the substrate Wf. While the present embodiment illustrates an example in which the anode mask 426 is provided, the anode mask 426 need not be provided. Furthermore, the above-described membrane 420 may be provided in the anode opening 427.

[0023] In the cathode region 422, a resistor 450 is disposed between the anode 430 and the substrate holder 440. In this embodiment, the resistor 450 faces the membrane 420. The resistor 450 is a member for adjusting the electric field in the plating solution and for achieving uniformity in the plating process on the plating surface Wf-a of the substrate Wf. In the illustrated example, the resistor 450 is cylindrical and is disposed so that the axial direction of the cylinder substantially coincides with the rotation axis Ax. The shape of the resistor 450 is not particularly limited as long as plating can be performed with the desired accuracy.

[0024] The resistor 450 is formed of a material having a higher electrical resistivity than the plating solution. This material is preferably a dielectric material. The resistor 450 may contain metal or resin. The electric field adjusting resistor 450 has a first surface 451 on the anode side and a second surface 452 on the substrate holder side.

[0025] 4 is an enlarged bottom view schematically illustrating the first surface 451 of the resistor 450 on the anode side. The resistor 450 has a plurality of through-holes 453 formed therein. The through-holes 453 penetrate between the first surface 451 and the second surface 452 of the resistor 450, forming a path through which the plating solution and the ions in the plating solution pass. In other words, the resistor 450 connects, via the through-holes 453, the cathode region 422 on the anode side of the resistor 450 to the cathode region 422 on the substrate holder side of the resistor 450, allowing the plating solution and the ions in the plating solution to move. Each of the plurality of through-holes 453 communicates with the anode side and the substrate holder side of the resistor 450. In the example of Figure 4, the through holes 453 are arranged regularly so that the distance between adjacent through holes 453 is constant, but the pattern of the through holes 453 is not particularly limited as long as plating can be performed with the desired precision, and the through holes 453 may be arranged randomly.

[0026] The resistor 450 may have a porous structure with a plurality of through holes 453. With such a configuration, the holes are arranged in a dispersed manner, and the current passing through these holes can be adjusted to make the thickness of the plating formed on the substrate Wf uniform.

[0027] As shown in FIG. 3 , the plating module 400 includes a resistance member 470. The resistance member 470 adjusts the electric field in the plating solution to achieve uniform plating on the plating surface Wf-a of the substrate Wf. The resistance member 470 for adjusting the electric field is a member that can expand and contract. The resistance member 470 includes an inlet 473 through which a fluid is introduced, and is configured so that its volume changes by changing the amount or pressure of the fluid inside the resistance member 470. The resistance member 470 is configured to be able to transition between a contracted state and an expanded state in which its volume is larger than that of the contracted state. The type of fluid is not particularly limited, and can be a gas or a liquid. From the viewpoints of simplifying the configuration and reducing costs, the fluid can be air.

[0028] The plating module 400 includes an inlet pipe 475 and an adjustment module 476. The inlet pipe 475 is a pipe for introducing a fluid into the resistance member 470 and is fluidly connected to the inlet 473. The inlet pipe 475 is fluidly connected to the adjustment module 476 outside the plating tank 410. The adjustment module 476 includes a pump, a pressure regulator, or the like, and adjusts the amount or pressure of the fluid inside the resistance member 470. As will be described later, the adjustment module 476 may be controlled by a control module 800 ( FIG. 1 ).

[0029] The resistance member 470 includes a membrane-like member 477 and a cavity 478 that is surrounded by the membrane-like member 477 and into which a fluid is introduced. An inlet 473 is formed in the membrane-like member 477, and the inlet 473 is in communication with the cavity 478. The material of the membrane-like member 477 is not particularly limited as long as it is impermeable to the plating solution and is deformable so that the resistance member 470 expands and contracts. From the viewpoint of facilitating the expansion and contraction of the resistance member 470, the membrane-like member 477 preferably includes an elastic membrane, and such an elastic membrane preferably includes rubber or silicone resin, for example, silicone rubber.

[0030] The resistive element 470 is disposed between the anode 430 and the resistor 450. The resistive element 470 may be disposed between the anode 430 and the resistor 450 in the direction in which the rotation axis Ax extends. In the cup-type plating module 400 according to this embodiment, the resistive element 470 may be disposed between the anode 430 and the resistor 450 in the vertical direction. The resistive element 470 is preferably disposed between the anode mask 426 and the resistor 450. Furthermore, as shown in the illustrated example, the resistive element 470 may be disposed between the membrane 420 and the resistor 450.

[0031] Resistance element 470 may be placed in the plating solution while being supported by a support member (not shown). Such a support member is not particularly limited, but may be, for example, a thread-, string-, or rod-like member extending from resistor 450. Alternatively, resistance element 470 may be supported by a member extending from the outside of plating tank 410 or inner tank 412. Resistance element 470 may also be supported by an introduction pipe 475.

[0032] FIG. 5 is a schematic plan view of the resistance element 470. As described below, the resistance element 470 is preferably annular. The radial range of the resistance element 470 relative to the rotation axis Ax may be outside 50% of the distance from the rotation axis Ax to the farthest end of the resistor 450 in the radial direction. This range may also be inside 90% of the distance from the rotation axis Ax to the farthest end of the resistor 450 in the radial direction. In one embodiment, the inner diameter of the resistance element 470 is 50% to 70% of the diameter of the resistor 450 or the substrate Wf, and preferably 55% to 65%. In another embodiment, the outer diameter of the resistance element 470 is 70% to 90% of the diameter of the resistor 450 or the substrate Wf, and preferably 80% to 90%. This allows the electric field to be efficiently adjusted in areas that are prone to causing poor plating thickness uniformity, further improving the uniformity of the plating thickness formed on the substrate Wf. The shape and dimensions of the resistance member 470 are not particularly limited, and can be set appropriately depending on the position where it is desired to locally change the electric field during plating.

[0033] 6 and 7 are conceptual diagrams showing the electric field around the resistance member 470. FIG. 6 corresponds to a schematic longitudinal cross-sectional view of the resistance member 470 in a contracted state, and FIG. 7 corresponds to a schematic longitudinal cross-sectional view of the resistance member 470 in an expanded state. In FIGS. 6 and 7, the electric field is schematically indicated by arrow Ar1. In this embodiment, the resistance member 470 is configured to be expandable and contractible in the direction of the rotation axis Ax of the substrate holder 440. This allows for a simpler configuration than when the resistance member 470 expands and contracts in other directions, allowing for more precise adjustment of the electric field and facilitating the manufacture of the resistance member 470. The direction of expansion and contraction of the resistance member 470 can be set by, for example, placing a rigid member on a surface of the resistance member 470 other than the surface facing the resistor and preventing a portion of the film-like member 477 from moving.

[0034] The electric field lines corresponding to the electric field directed from the anode 430 toward the substrate holder 440 above will bend around the resistor 470. In the example of FIG. 7 in which the resistor 470 is in an expanded state, the distance between the resistor 470 and the resistor 450 is short, and the electric field lines do not bend around sufficiently. Therefore, the electric field near the first surface 451 on the anode side of the resistor 450 is smaller at a position above the resistor 470 than at a position where the resistor 470 is not below. In this case, the resistance of the path passing through the position above the resistor 470 is greater than the resistance of the path passing through a position where the resistor 470 is not below. On the other hand, in the example of FIG. 6 in which the resistor 470 is in a contracted state, there is a certain distance between the resistor 470 and the resistor 450, and therefore the electric field lines bend around the resistor 470 to some extent. Therefore, the influence of the resistor 470 on the electric field near the first surface 451 on the anode side of the resistor 450 can be reduced compared to the example of FIG. 6.

[0035] Therefore, by adjusting the volume of the resistance member 470, it is possible to adjust the local electric field in the plating solution, i.e., the local plating current. This makes it possible to improve the uniformity of the thickness of the plating film formed on the substrate Wf, which is the object to be plated. This weakening of the electric field by the resistance member 470 is called electric field shielding by the resistance member 470.

[0036] The resistance element 470 may be installed so as not to block the through-holes 453 on the first surface 451 of the resistor 450, which is the surface closest to the anode 430. Here, "installed so as not to block the through-holes 453" means that the resistance element 470 does not block the through-holes 453 during plating, particularly when the resistance element 470 expands. This prevents deformation of the supply pipe 475 or a support member supporting the resistance element 470 due to a reaction force generated when the expanding resistance element 470 presses against the first surface 451 of the resistor 450. When the plating module 400 includes multiple resistors 450, the resistance element 470 may be installed so as not to block the through-holes 453 on the surface of each resistor 450 closest to the anode. The resistance element 470 is configured to generate resistance according to the volume of the plating solution introduced into the plating tank 410, thereby enabling more precise local adjustment of the plating current.

[0037] As shown in FIG. 3 , the plating module 400 includes a paddle 491 disposed between the substrate Wf held by the substrate holder 440 and the resistor 450, and a paddle stirring mechanism (not shown) for moving the paddle 491 through the plating solution to stir the plating solution. The paddle 491 may be configured, for example, as a plate member with a number of honeycomb-shaped holes formed therein, but is not limited thereto. The paddle stirring mechanism may be realized by a known mechanism such as a motor. The paddle stirring mechanism is configured to stir the plating solution near the plating surface Wf-a of the substrate Wf by reciprocating the paddle 491 along the plating surface Wf-a of the substrate Wf. However, the present invention is not limited to this example, and the paddle stirring mechanism may be configured, for example, to reciprocate the paddle 491 perpendicular to the plating surface Wf-a. Furthermore, although the present embodiment illustrates an example in which the paddle 491 and the paddle stirring mechanism are provided, the paddle 491 and the paddle stirring mechanism may not be provided.

[0038] A shield 492 is provided in the cathode region 422 to shield the current flowing from the anode 430 to the substrate Wf. In this embodiment, the shield 492 is provided at the same height as the paddle 491, but this is not limited to this example. The shield 492 is, for example, a substantially plate-shaped member made of a dielectric material. The shield 492 is configured to be movable between a shielding position interposed between the plating surface Wf-a of the substrate Wf and the anode 430 and a retracted position retracted from between the plating surface Wf-a and the anode 430. In other words, the shield 492 is configured to be movable between a shielding position below the plating surface Wf-a and a retracted position away from below the plating surface Wf-a. The position of the shield 492 is controlled by a shield driving mechanism (not shown) that receives commands from the control module 800. The shield driving mechanism can be realized by a known mechanism such as a motor or a solenoid.

[0039] The cathode region 422 is also provided with a sensor 460 that detects parameters related to the plating film formed on the plating surface Wf-a of the substrate Wf. In this embodiment, the sensor 460 is a film thickness sensor for measuring the thickness of the plating film, and the parameters related to the plating film refer to physical quantities for estimating the thickness of the plating film or the formation rate of the plating film. The sensor 460 is disposed so as to face the plating surface Wf-a. In this embodiment, the sensor 460 is configured to be movable so that the detection position can be changed in the radial direction relative to the rotation axis Ax. However, this is not limited to this example, and multiple sensors 460 facing the plating surface Wf-a may be provided. In addition, in one embodiment, the detection end of the sensor 460 is disposed inside the resistor 450. However, this is not limited to this example, and the sensor 460 may be disposed in another location outside the resistor 450, for example.

[0040] The detection signal from the sensor 460 is input to the control module 800 ( FIG. 1 ). In this embodiment, a potential sensor having a detection electrode (not shown) is used as the sensor 460. The detection electrode of the sensor 460 may be disposed so as to face the plating surface Wf-a, or may be disposed in a conduit that faces the plating surface Wf-a and is filled with plating solution. Furthermore, when a potential sensor is used as the sensor 460, at least one reference potential sensor (not shown) is preferably provided in the plating tank 410. The reference potential sensor is preferably provided outside the region between the substrate Wf and the anode 430. In other words, the reference potential sensor is preferably provided in a position that does not overlap the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plating surface Wf-a of the substrate Wf. Based on the potential difference between the potential sensor 460, which is a potential sensor, and the reference potential sensor, the control module 800 can estimate the formation rate of the plating film formed on the surface Wf-a to be plated and measure the thickness of the plating film. This is based on the correlation between the plating current and the potential during the plating process. However, the sensor 460 may be any sensor capable of detecting parameters related to the plating film. Instead of or in addition to the potential sensor, other sensors such as an optical distance sensor (e.g., a white light confocal sensor), a magnetic field sensor, or an eddy current sensor may be used. While the present embodiment illustrates an example in which the sensor 460 is provided to detect parameters related to the plating film, the sensor 460 need not be provided.

[0041] The control module 800 can control the contraction and expansion of the resistance element 470 based on the plating thickness obtained using the sensor 460. This allows the resistance to be adjusted while checking the uniformity of the plating thickness, thereby forming a more uniform plating film. When the control module 800 wants to slow the plating formation rate at the horizontal position of the substrate Wf corresponding to the resistance element 470, it can control the adjustment module 476 ( FIG. 3 ) to increase the pressure of the resistance element 470 to cause it to expand. When the control module 800 wants to speed up the plating formation rate at the horizontal position of the substrate Wf corresponding to the resistance element 470, it can control the adjustment module 476 to decrease the pressure of the resistance element 470 to cause it to contract. The control module 800 may control the expansion and contraction of the resistance element 470 based on various plating conditions, such as the size of the anode opening 427, the rotation speed of the substrate holder 440, or the measured or set value of the current flowing through the anode 430 for plating.

[0042] In this way, the control module 800 can control the expansion and contraction of the resistance member 470 during plating based on at least one of the thickness of the plating formed on the substrate Wf, the plating current, the rotation speed of the substrate holder 440, and the size of the anode opening 427. This allows for more precise adjustment of the plating current according to various situations.

[0043] Here, the plating process in the plating module 400 of this embodiment will be described in more detail. The substrate Wf is exposed to the plating solution by immersing it in the plating solution in the cathode region 422 using the lifting mechanism 442. In this state, the plating module 400 can perform plating on the plating surface Wf-a of the substrate Wf by applying a voltage between the anode 430 and the substrate Wf. In one embodiment, the plating process is performed while the substrate holder 440 is rotated using the rotation mechanism 448. As a result of the plating process, a conductive film (plating film) is deposited on the plating surface Wf-a of the substrate Wf.

[0044] The control module (controller) 800 of this embodiment controls the adjustment module 476 to adjust the expansion and contraction of the resistance member 470, thereby improving the uniformity of the plating film thickness distribution over the entire substrate Wf. As an example, the adjustment of the resistance member 470 using the adjustment module 476 is performed before the plating process is started. Also, as another example, the adjustment of the resistance member 470 using the adjustment module 476 is performed in real time during the plating process based on the detection value by the sensor 460.

[0045] FIG. 8 is a flowchart illustrating an example of a method for setting operation recipes for the resistance element 470, the anode mask 426, and the shield 492 by the control module 800. The method illustrated in FIG. 8 is executed, for example, when processing a new substrate lot. The control module 800 may set operation recipes for only some of the resistance element 470, the anode mask 426, and the shield 492. The operation recipe for the resistance element 470 may be a recipe that indicates the volume or length of the resistance element 470 along the rotation axis Ax. The control module 800 may refer to data that indicates the relationship between the internal pressure of the resistance element 470 and the length of the resistance element 470 along the rotation axis Ax, which is stored in a storage medium (not shown), and control the expansion and contraction of the resistance element 470 based on the data. The operation recipe for the anode mask 426 is a recipe that indicates the opening dimensions of the anode mask 426. The operation recipe for the shield 492 is a recipe that indicates the advance / retract position of the shield 492. The operation recipe may be set by a computer external to the plating apparatus 1000 and transmitted to the plating apparatus 1000 instead of being set by the control module 800 of the plating apparatus 1000 .

[0046] In the example shown in FIG. 8 , the control module 800 first acquires a resist pattern for the substrate Wf to be processed (step S110). The resist pattern refers to a pattern of a resist layer formed on the surface Wf-a to be plated so that a desired plating pattern is formed by plating. The resist pattern may be acquired by detecting the substrate Wf using a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may be equipped with an imaging sensor (not shown), such as a camera, that captures an image of the surface Wf-a to be plated of the substrate Wf. The control module 800 may then acquire imaging data detected by the imaging sensor and analyze the imaging data to acquire the resist pattern for the surface Wf-a to be plated. The resist pattern may be acquired from the imaging data using a known method based on shading or feature points of the imaging data. Alternatively, the control module 800 may acquire the resist pattern via external input via wired or wireless communication, for example.

[0047] The control module 800 then sets operation recipes for the resistance element 470, the anode mask 426, and the shield 492 based on the acquired resist pattern (step S120). As a specific example, the control module 800 calculates a plating growth coefficient for each predetermined region of the plating surface Wf-a of the substrate Wf based on the acquired resist pattern, and sets operation recipes for each control object based on the calculated plating growth coefficient. Here, the plating growth coefficient is a parameter indicating the growth rate (formation rate) of the plating film when each of the resistance element 470, the anode mask 426, and the shield 492 least blocks current. As an example, the plating growth coefficient can be expressed as the amount (e.g., nanometers) of plating film formed per unit time (e.g., 1 second). As a specific example, the control module 800 can calculate the aperture ratio of the resist layer for each predetermined region based on the resist pattern, and then calculate the plating growth coefficient based on the calculated aperture ratio. This is because in areas where the aperture ratio of the resist layer is large, the area on which plating is deposited and the amount of plating required to form a certain amount of plating film are large, and the growth rate of the plating film tends to be slower than in areas where the aperture ratio of the resist layer is small.

[0048] FIG. 9 is a schematic diagram illustrating a resist pattern formed on the plating surface Wf-a of a substrate Wf according to one embodiment. In FIG. 9 , resist openings are formed only in the cross-shaped region A1, which is hatched, and the region A2 outside the cross-shaped region A1 is a non-opening region where no resist openings are formed. When plating is performed on a substrate Wf with such a resist pattern, plating current does not flow through the non-opening region A2, but only through the opening region A1. In this embodiment, plating is performed while rotating the substrate holder 440 using the rotation mechanism 448. The plating current concentrates in the cross-shaped convex region of region A1, particularly in the circumferential direction, including region A2, resulting in a large plating film thickness. In this specification, the region in which resist openings are formed substantially entirely when viewed circumferentially is referred to as the "central region B1" (in the example shown in FIG. 9 , the circular region surrounded by the inner dashed line C1). Furthermore, when viewed in the circumferential direction, a region that includes both a region where a resist opening is formed (opening region A1) and a region where a resist opening is not formed (non-opening region A2), and where the area of ​​the opening region A1 is larger in the circumferential direction than the area of ​​the non-opening region A2, is called an "intermediate region B2" (in the example shown in FIG. 9, this is an annular region surrounded by dashed-dotted lines C1 and C2). Furthermore, when viewed in the circumferential direction, a region that includes both the opening region A1 and the non-opening region A2, and where the area of ​​the opening region A1 is smaller in the circumferential direction than the area of ​​the non-opening region A2, is called an "outer peripheral region B3" (in the example shown in FIG. 9, this is an annular region surrounded by dashed-dotted lines C2 and C3). In the example shown in FIG. 9, the central region B1, intermediate region B2, and outer peripheral region B3 are located in this order from the center to the outer periphery of the plating surface Wf-a, and no resist opening is formed on the outer periphery of the outer peripheral region B3. However, this is not limited to this example, and any resist pattern may be formed on the substrate Wf.

[0049] Here, the anode mask 426 or the shield 492 provided in the plating module 400 can suitably adjust the plating film formation rate near the outer periphery of the plating surface Wf-a. However, when plating is performed on a substrate Wf as shown in Figure 9, the plating film formation rate in the region (particularly the middle region B2) that is closer to the inner periphery than near the outer periphery may be relatively higher, which may impair the uniformity of the thickness of the plating film.

[0050] In contrast, in the plating module 400 of this embodiment, the resistance element 470 can be annular, allowing the electric field to be adjusted primarily in the region where the resistance element 470 is located. This allows the plating rate in the intermediate region B2 to be adjusted by adjusting the current flowing through the intermediate region B2. For example, in the substrate Wf of FIG. 9 , if the plating rate in the intermediate region B2 surrounded by the dashed lines C1 and C2 is relatively high, the resistance element 470 can be expanded to reduce the plating thickness in the intermediate region B2. This allows for improved thickness uniformity in the plating film, even when plating the substrate Wf shown in FIG. 9 . Additionally, the plating module 400 of this embodiment includes an anode mask 426 and a shield 492. This allows the plating rate in the intermediate region B2 to be adjusted by expanding or contracting the resistance element 470, and the plating rate in the peripheral region B3 to be adjusted by the anode mask 426 and the shield 492. Therefore, by controlling the resistor 450, the anode mask 426, and the shield 492, the plating speed can be adjusted for each region of the substrate Wf, thereby improving the uniformity of the thickness of the plating film. The resistor member 470 may be arch-shaped, and in this case, the plating speed of an annular region centered on the rotation axis Ax of the substrate holder 440 during plating can also be locally adjusted. The dimensions of the resistor member 470 may also be determined based on the intermediate region B2, such as by making the dimensions of the resistor member 470 approximately the same as those of the intermediate region B2.

[0051] Fig. 10 is a flowchart showing an example of a method for setting an operation recipe for the resistance element 470, the anode mask 426, and the shield 492 during a plating process by the control module 800. The method shown in Fig. 10 is executed during a plating process in place of the method shown in Fig. 8 or to correct the operation recipe set by the method shown in Fig. 8. Note that the control module 800 may set operation recipes for only some of the resistance element 470, the anode mask 426, and the shield 492.

[0052] When the plating process begins (step S210), the control module 800 acquires plating film parameters from the sensor 460 in real time (step S220). In this embodiment, the sensor 460 detects the plating film parameters as the substrate Wf rotates. In one embodiment, the plating film parameters are detected at multiple points along the radial direction on the plating surface Wf-a. The control module 800 calculates the thickness distribution of the plating film on the plating surface Wf-a based on the values ​​detected by the sensor 460 (step S230). Next, the control module 800 sets operation recipes for the resistance element 470, the anode mask 426, and the shield 492 based on the calculated thickness distribution (step S240). The control module 800 repeats steps S220 to S240 until the plating process is completed (step S250), setting operation recipes for the control objects. The control module 800 then controls the resistance element 470, the anode mask 426, and the shield 492 based on the set operation recipes. In this way, by setting or modifying the operating recipe for the resistance element 470, etc. during the plating process based on the parameters related to the plating film obtained from the sensor 460, the uniformity of the thickness of the plating film can be further improved.

[0053] <Modification 1-1> In the above embodiment, the resistance member 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistance member 470 may expand and contract in the radial direction relative to the rotation axis Ax.

[0054] Fig. 11 is a schematic longitudinal cross-sectional view showing the resistance member 470A of this modified example in a contracted state. Fig. 12 is a schematic longitudinal cross-sectional view showing the resistance member 470A of this modified example in an expanded state. In Fig. 11, the points at which the resistance member 470 expands and contracts in the radial direction are schematically indicated by arrows Ar2. The directions of expansion and contraction of the resistance member 470A can be set by, for example, placing rigid members on surfaces other than the radially outer surface of the resistance member 470A to prevent movement of the membrane member 477.

[0055] In the resistance member 470A of this modification, the electric field above the resistance member 470A can be changed when the resistance member 470A expands, thereby enabling local adjustment of the plating current. In addition, the radial position at which the plating current can be adjusted can be changed.

[0056] <Modification 1-2> In the above embodiment, the resistance member 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistance member 470 may expand and contract in the circumferential direction relative to the rotation axis Ax.

[0057] FIG. 13 is a schematic plan view showing the resistance member 471 of this modified example in a contracted state. FIG. 14 is a schematic plan view showing the resistance member 471 of this modified example in an expanded state. In the illustrated example, three resistance members 471 are configured to shield the electric field over substantially the entire circumferential direction. The three resistance members 471 can be connected to each other in the circumferential direction to form a single annular shielding member. The three resistance members 471 are designated as resistance members 471A, 471B, and 471C, respectively. Fluid is introduced into resistance members 471A, 471B, and 471C via inlet pipes 475A, 475B, and 475C, respectively, to control the volume. The direction of expansion and contraction of the resistance member 471 can be set by, for example, arranging rigid members on surfaces other than those perpendicular to the circumferential direction to prevent the film-like member 477 from moving.

[0058] The resistance member 471 of this modification can also change the electric field above the resistance member 471 when it expands, thereby enabling localized adjustment of the plating current. Furthermore, the resistance member 471 can be configured compactly when it is contracted, allowing for greater volumetric change and more flexible adjustment of the plating current. The number of resistance members 471 arranged in the plating module 400 is not particularly limited and may be one, two, four, or more. Furthermore, the resistance members 471 do not necessarily need to be arranged around the entire circumference, but may be arranged within only a partial angular range around the rotation axis Ax.

[0059] <Modification 1-3> In the above-described embodiment, the plating module 400 constitutes a cup-type plating apparatus, but it may also constitute a dip-type plating apparatus. In this case, the substrate Wf, the resistor 450, the resistance member 470, and the anode 430 can each be arranged vertically. This modification can also achieve the same effects as the above-described embodiment.

[0060] Second Embodiment The plating apparatus 1000 of the second embodiment has substantially the same configuration as the plating apparatus 1000 of the first embodiment. However, the second embodiment differs from the first embodiment in that a resistance member 470 is disposed between the surface of at least one resistor 450 closest to the anode and the surface closest to the substrate holder in the plating module 400.

[0061] FIG. 15 is a schematic vertical cross-sectional view showing the configuration inside the inner tank 412 of the plating module 400A of this embodiment. The plating module 400A includes multiple resistors 450A and 450B. The resistors 450A and 450B are located between the substrate holder 440 and the anode 430, with the resistor 450B located on the anode side of the resistor 450A. A resistive element 470 is located in the cathode region 422A between the resistors 450A and 450B. The resistors 450A and 450B may each have a shape similar to the resistor 450 of the above-described embodiment. The resistive element 470 may expand only upward, only downward, or both upward and downward. In this embodiment, the resistive element 470 is disposed between the plurality of resistive elements 450A and 450B, thereby achieving the effect of changing and reducing the electric field between the resistive element 470 and each of the resistive elements 450A and 450B, thereby enabling more precise local adjustment of the plating current.

[0062] The resistance member 470 may close the through-hole 453 opening on the anode-side surface of the resistor 450A, or may close the through-hole 453 opening on the substrate holder-side surface of the resistor 450B. This allows for greater variation in the plating current passing through the through-holes 453 of the resistors 450A and 450B, enabling more flexible local adjustment of the plating current. Alternatively, or in addition to the resistance member 470, the resistance member 470A or 471 of the above-described modified example may be disposed between the resistors 450A and 450B.

[0063] <Modification 2> In the plating module 400 of the above-described embodiment, a resistance member 470 may be disposed inside the resistor 450 .

[0064] 16 is a schematic vertical cross-sectional view showing the configuration of the inner tank 412 of a plating module 400B of this modified example. In the illustrated example, the plating module 400B includes a resistor 450C. The resistor 450C includes an internal chamber 454 that defines the hollow of the resistor 450C. A resistance member 470 is disposed in the internal chamber 454, and a plating solution is introduced into the internal chamber 454. The internal chamber 454 is connected to the substrate holder side of the resistor 450C via a plurality of through holes 453A. The internal chamber 454 is connected to the anode side of the resistor 450C via a plurality of through holes 453B. This modified example can also achieve the same effects as the plating module 400A described above.

[0065] 17 is a schematic vertical cross-sectional view showing the inner tank 412 of a plating module 400C of a third embodiment. The plating module 400C has substantially the same configuration as the plating module 400B of the above-described modified example, but differs from the plating module 400B in that it has a resistor 450D and a resistor element 472 instead of the resistor 450C and the resistor element 470.

[0066] The resistor 450D has a plurality of through holes 453C formed therein. The through holes 453C penetrate between the first surface 451 on the anode side of the resistor 450D and the second surface 452 on the substrate holder 440 side, and form paths through which the plating solution and ions in the plating solution pass.

[0067] A resistance member 472 is disposed inside the resistor 450D. The resistance member 472 is disposed in the hollow of the resistor 450D and is formed of an elastic member. The resistance member 472 includes an elastic wall 4720 that defines a through hole 453C of the resistor 450D. In the example shown, the elastic wall 4720 is formed so as to surround the through hole 453C. The shape of the elastic wall 4720 can be set appropriately depending on the shape of the through hole 453C, and may be, for example, cylindrical.

[0068] Resistance member 472 has a cavity 478A formed therein, which is defined by a portion along the inner wall surface that defines the hollow of resistor 450D and an elastic wall 4720. In the illustrated example, through-hole 453C is surrounded by elastic wall 4720, and elastic wall 4720 is surrounded by cavity 478A. The interior of cavity 478A is connected to inlet 473 for introducing a fluid into resistance member 472, and is configured so that fluid is introduced from outside plating tank 410 via inlet pipe 475. As an example, resistance member 472 may have a sieve-like structure with a plurality of through-holes 453C formed in a plate-like outer shape extending along a horizontal plane.

[0069] The plating module 400C of this embodiment is configured so that the opening and closing of the through-hole 453C is controlled by the contraction and expansion of the resistance member 472. Fig. 17 shows the resistance member 472 in a contracted state, in which the through-hole 453C is not blocked by the elastic wall 4720, and the anode side and the substrate holder side of the through-hole 453C are in communication with each other via the through-hole 453C. Therefore, the through-hole 453C is in an open state.

[0070] FIG. 18 is a schematic vertical cross-sectional view of the inner tank 412 of the plating module 400C, showing the resistance member 472 in an expanded state. In FIG. 18, the pressure in the cavity 478A inside the resistance member 472 increases, causing the resistance member 472 to expand in a direction perpendicular to the rotation axis Ax of the substrate holder 440, and the elastic wall 4720 protrudes to narrow the through hole 453C, blocking the through hole 453C. Therefore, the through hole 453C is in a closed state. By controlling the degree of contraction and expansion of the resistance member 472, the inner diameter of the through hole 453C can be adjusted, and the resistance of the through hole 453C can be continuously changed.

[0071] In the illustrated example, the opening and closing of all of the through holes 453C is controlled, but the opening and closing of only some of the through holes 453C may also be controlled. Thus, in this embodiment, the resistance member 472 is disposed inside the resistor 450D and defines at least some of the multiple through holes 453C. This allows the resistance of the through holes 453C to be changed by the contraction and expansion of the resistance member 472, thereby more reliably adjusting the local plating current passing through the through holes 453C. The position of the through holes 453C whose opening and closing is controlled is not particularly limited and can be set appropriately depending on the position where the plating current is to be adjusted.

[0072] The present invention can also be described as the following aspects. [Aspect 1] According to Aspect 1, a plating apparatus is proposed, the plating apparatus comprising: a plating tank; a substrate holder configured to hold a substrate; an anode disposed in the plating tank facing the substrate held in the substrate holder; at least one resistor for adjusting an electric field disposed between the anode and the substrate holder, each of the at least one resistor having a plurality of through-holes communicating with the anode side and the substrate holder side; and a resistive element for adjusting the electric field disposed between the anode and the substrate holder, the resistive element having an inlet for introducing a fluid and configured such that its volume changes by changing the amount or pressure of the fluid inside the resistive element, the resistive element being positioned so as not to block the plurality of through-holes on the surface of the at least one resistor closest to the anode. According to Aspect 1, the uniformity of the thickness of a plating film formed on an object to be plated can be improved.

[0073] [Mode 2] According to Mode 2, the resistance member in Mode 1 can expand and contract in the direction of the axis of rotation of the substrate holder during plating. Mode 2 allows for a simpler configuration than when the resistance member expands and contracts in other directions, making it possible to more precisely adjust the electric field and facilitate manufacturing of resistance member 470.

[0074] [Mode 3] According to Mode 3, in Mode 1 or 2, the resistance member can expand and contract in a radial direction relative to the axis of rotation of the substrate holder during plating. According to Mode 3, the range in which the plating current can be adjusted can be expanded in the radial direction.

[0075] [Mode 4] According to Mode 4, in Modes 1 to 3, the resistance member can expand and contract in a circumferential direction about the axis of rotation of the substrate holder during plating. According to Mode 4, the resistance member can be configured compactly when in a contracted state, which allows for greater change in the volume of the resistance member and more flexible adjustment of the plating current.

[0076] [Mode 5] According to Mode 5, in any of Modes 1 to 4, the resistance member is annular or arch-shaped. Since the plating formation speed may depend on the distance from the center of the object, Mode 5 can particularly improve the uniformity of the thickness of the formed plating in such cases.

[0077] [Mode 6] According to Mode 6, in any of Modes 1 to 5, the resistance member is configured to generate a resistance corresponding to the volume of the plating solution introduced into the plating tank. According to Mode 6, it is possible to more precisely adjust the local plating current.

[0078] [Mode 7] According to Mode 7, in Mode 1, the resistance member is disposed inside the resistor and defines at least a portion of the plurality of through holes. According to Mode 7, it is possible to more reliably adjust the local plating current passing through the through holes.

[0079] [Mode 8] According to Mode 8, in Modes 1 to 6, the plating apparatus includes a plurality of the resistors, and the resistance member is disposed between the plurality of resistors. According to Mode 8, it is possible to obtain the effect of adjusting the electric field between the resistance member and each of the plurality of resistors, and it is possible to more precisely adjust the local plating current.

[0080] [Mode 9] According to Mode 9, in any one of Modes 1 to 8, the substrate holder is configured to hold the substrate in the plating tank with the surface to be plated facing downward. According to Mode 9, plating can be performed by taking advantage of the advantages of a cup-type plating device.

[0081] Although the embodiments of the present invention have been described above, the above-described embodiments are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The present invention may be modified or improved without departing from the spirit thereof, and the present invention naturally includes equivalents thereof. Furthermore, any combination of the embodiments and modifications is possible within the scope of solving at least part of the above-described problems or achieving at least part of the effects, and any combination or omission of the components described in the claims and specification is possible.

[0082] 400, 400A, 400B, 400C... Plating module 410... Plating tank 412... Inner tank 420... Membrane 422, 422A... Cathode region 424... Anode region 426... Anode mask 427... Anode opening 430... Anode 440... Substrate holder 442... Lifting mechanism 448... Rotation mechanism 450, 450A, 450B, 450C, 450D... Resistor 451... First surface of resistor 453, 453A, 453B, 453C... Through hole 460... Sensor 470, 470A, 471, 471A, 471B, 471C, 472... Resistance member 473... Inlet 475, 475A, 475B, 475C... Inlet pipe 476: Adjustment module 477: Film-like member 478, 478A: Cavity 492: Shield 800: Control module 1000: Plating device 4720: Elastic wall Ax: Rotation axis Wf: Substrate Wf-a: Surface to be plated

Claims

1. A plating apparatus comprising: a plating tank; a substrate holder configured to hold a substrate; an anode arranged in the plating tank so as to face the substrate held in the substrate holder; at least one resistor for adjusting an electric field arranged between the anode and the substrate holder, each of the at least one resistor having a plurality of through holes communicating with the anode side and the substrate holder side; and a resistance member for adjusting an electric field arranged between the anode and the substrate holder, wherein the resistance member has an inlet for introducing a fluid and is configured so that its volume changes by changing the amount or pressure of the fluid inside the resistance member, and the resistance member is installed so as not to block the plurality of through holes on the surface of the at least one resistor closest to the anode.

2. The plating apparatus according to claim 1, wherein the resistance member is expandable and contractible in a direction along which the axis of rotation of the substrate holder extends during plating.

3. The plating apparatus of claim 1, wherein the resistance member is expandable and contractible radially relative to an axis of rotation of the substrate holder during plating.

4. The plating apparatus of claim 1, wherein the resistance member is expandable and contractable in a circumferential direction about an axis of rotation of the substrate holder during plating.

5. A plating apparatus according to any one of claims 1 to 4, wherein the resistance member is annular or arch-shaped.

6. A plating apparatus according to any one of claims 1 to 4, wherein the resistance member is configured to generate a resistance corresponding to the volume of the plating solution introduced into the plating tank.

7. A plating apparatus according to any one of claims 1 to 4, wherein the resistance member is disposed inside the resistor body and defines at least a portion of the plurality of through holes.

8. The plating apparatus according to claim 1, wherein the plating apparatus comprises a plurality of the resistors, and the resistance member is disposed between the plurality of resistors.

9. A plating apparatus according to any one of claims 1 to 4, wherein the substrate holder is configured to hold the substrate in the plating tank with the surface to be plated facing downward.

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