Semiconductor device

Abstract

This semiconductor device includes: a function assembly including a semiconductor element; a sealing member that covers the semiconductor element, and contacts the function assembly; and a barrier member having permeability lower than that of the sealing member. The interface between the function assembly and the sealing member includes at least one exposed end. The at least one exposed end is exposed to the outside. The barrier member covers at least a part of the at least one exposed end.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, in semiconductor devices including semiconductor elements, the semiconductor elements are covered with an encapsulating resin to prevent the intrusion of liquids or gases from the outside. Patent Document 1 discloses a conventional semiconductor device. The semiconductor device described in Patent Document 1 includes a semiconductor element, a lead frame, solder, wire, and encapsulating resin. In this semiconductor device, the semiconductor element is, for example, a diode chip or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chip. The lead frame mounts the semiconductor element and is electrically connected to the semiconductor element via solder and wire. The solder and wire are conductive members for electrically connecting the lead frame and the semiconductor element. The solder is interposed between the semiconductor element and the lead frame, providing electrical continuity therebetween. The wire is joined to the semiconductor element and the lead frame, providing electrical continuity therebetween. The encapsulating resin covers a portion of the lead frame, the semiconductor element, the solder, and the wire.

[0003] Japanese Patent Application Laid-Open No. 2017-5165

[0004] [Summary] A semiconductor device is subjected to thermal loads, for example, due to reflow when mounted on a circuit board of an electronic device or the like, or due to heat generated by a semiconductor element during operation. Repeated thermal loads can cause oxidation of the encapsulating resin, potentially leading to embrittlement. Oxidation of the encapsulating resin reduces its ability to prevent the intrusion of liquids and gases from the outside. For example, oxidation of the encapsulating resin can reduce the adhesion of the encapsulating resin at the interfaces between the encapsulating resin and the semiconductor element, lead frame, and wire, allowing liquids and gases to infiltrate through these interfaces. Such intrusion of liquids and gases can cause deterioration of the semiconductor element, lead frame, wire, and the like, and can result in malfunction of the semiconductor device.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can prevent the intrusion of liquids and gases from the outside.

[0006] The present disclosure provides a semiconductor device comprising: a functional assembly including a semiconductor element; an encapsulation member covering the semiconductor element and in contact with the functional assembly; and a barrier member having a lower permeability than the encapsulation member. The interface between the functional assembly and the encapsulation member has at least one exposed edge exposed to the outside. The barrier member covers at least a portion of the at least one exposed edge.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a plan view of FIG. 2 with the barrier member omitted and the sealing member shown in imaginary lines. FIG. 4 is a partially enlarged plan view of FIG. 3, illustrating the covering portion of the sealing member compared to FIG. 3. FIG. 5 is a partially enlarged plan view of FIG. 3, illustrating the covering portion of the sealing member compared to FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a characteristic curve showing the relationship between stress and strain of a certain material. FIG. 10 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to the first embodiment. FIG. 11 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to the first embodiment. FIG. 12 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to the first embodiment. FIG. 13 is a plan view showing a semiconductor device according to a first modification of the first embodiment. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13 . FIG. 15 is a cross-sectional view showing a semiconductor device according to a second modified example of the first embodiment, corresponding to the cross section of FIG. 7 . FIG. 16 is a cross-sectional view showing a semiconductor device according to a third modified example of the first embodiment, corresponding to the cross section of FIG. 7 . FIG. 17 is an enlarged plan view of a main portion of a semiconductor device according to a third modified example of the first embodiment, corresponding to FIG. 4 . FIG. 18 is a cross-sectional view showing a semiconductor device according to a fourth modified example of the first embodiment, corresponding to the cross section of FIG. 7 . FIG. 19 is a cross-sectional view showing a semiconductor device according to a fifth modified example of the first embodiment, corresponding to the cross section of FIG. 7 . FIG. 20 is a cross-sectional view showing a semiconductor device according to the second embodiment, corresponding to the cross section of FIG. 6 . FIG. 21 is a cross-sectional view showing a semiconductor device according to the second embodiment, corresponding to the cross section of FIG. 7 . FIG. 22 is a perspective view showing a semiconductor device according to a modified example of the second embodiment. FIG. 23 is a cross-sectional view showing a semiconductor device according to a modified example of the second embodiment, corresponding to the cross section of FIG. 6 . FIG. 24 is a cross-sectional view showing a semiconductor device according to a modified example of the second embodiment, corresponding to the cross section of FIG. 7 . FIG. 25 is a perspective view showing a semiconductor device according to the third embodiment.FIG. 26 is a cross-sectional view showing a semiconductor device according to a third embodiment, corresponding to the cross section of FIG. 7 . FIG. 27 is a plan view showing a semiconductor device according to a modified example of the third embodiment. FIG. 28 is a perspective view showing a semiconductor device according to a fourth embodiment. FIG. 29 is a plan view showing a semiconductor device according to the fourth embodiment. FIG. 30 is the plan view of FIG. 29 , with the barrier member omitted and the sealing member shown by imaginary lines. FIG. 31 is the plan view of FIG. 30 , with the sealing member and one of the two conductive members omitted. FIG. 32 is a front view showing a semiconductor device according to the fourth embodiment. FIG. 33 is a bottom view showing a semiconductor device according to the fourth embodiment. FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 30 . FIG. 35 is a partially enlarged cross-sectional view of FIG. 34 . FIG. 36 is a partially enlarged cross-sectional view of FIG. 34 . FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII in FIG. 30 . FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 30 . FIG. 39 is a cross-sectional view taken along line XXXIX-XXXIX in FIG. 30 . FIG. 40 is a perspective view showing a semiconductor device according to the fifth embodiment. FIG. 41 is a plan view showing a semiconductor device according to the fifth embodiment, in which the barrier member is omitted and the sealing member is indicated by imaginary lines. FIG. 42 is a partially enlarged plan view showing a portion of FIG. 41 , illustrating the covering portion of the sealing member relative to FIG. 41 . FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. 41 . FIG. 44 is a partially enlarged cross-sectional view showing a portion of FIG. 43 . FIG. 45 is a cross-sectional view taken along line XLV-XLV in FIG. 41 . FIG. 46 is a cross-sectional view taken along line XLVI-XLVI in FIG. 41 . FIG. 47 is a cross-sectional view showing a semiconductor device according to a first modification of the fifth embodiment, corresponding to the cross section of FIG. 45 . Fig. 48 is a plan view showing a semiconductor device according to a second modified example of the fifth embodiment, in which the barrier member is omitted and the sealing portion of the sealing member is shown by an imaginary line. Fig. 49 is a partially enlarged plan view of a part of Fig. 48. Fig. 50 is a partially enlarged cross-sectional view showing a semiconductor device according to a second modified example of the fifth embodiment, corresponding to the cross section of Fig. 44. Fig. 51 is a plan view showing a semiconductor device according to a third modified example of the fifth embodiment, in which the barrier member is omitted and the sealing portion of the sealing member is shown by an imaginary line.FIG. 52 is a partially enlarged plan view enlarging a part of FIG. 51 . FIG. 53 is a partially enlarged cross-sectional view showing a semiconductor device according to a third modified example of the fifth embodiment, corresponding to the cross section of FIG. 44 . FIG. 54 is a partially enlarged cross-sectional view showing a semiconductor device according to another configuration example of the third modified example of the fifth embodiment, corresponding to the cross section of FIG. 44 . FIG. 55 is a partially enlarged plan view showing a semiconductor device according to a fourth modified example of the fifth embodiment, omitting the barrier member and the sealing portion of the sealing member. FIG. 56 is a partially enlarged cross-sectional view showing a semiconductor device according to a fourth modified example of the fifth embodiment, corresponding to the cross section of FIG. 44 . FIG. 57 is a partially enlarged plan view showing a semiconductor device according to a fifth modified example of the fifth embodiment, omitting the barrier member and the sealing portion of the sealing member. FIG. 58 is a cross-sectional view taken along LVIII-LVIII of FIG. 57 . FIG. 59 is a cross-sectional view showing a semiconductor device according to a sixth embodiment.

[0009] DETAILED DESCRIPTION A preferred embodiment of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant description will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, "object A overlaps object B when viewed in a certain direction" includes "object A overlaps the entire object B" and "object A overlaps a part of object B," unless otherwise specified. Furthermore, "object A (its material) contains material C" includes "object A (its material) is made of material C" and "object A (its material) is mainly composed of material C." Furthermore, "a surface A faces in a certain direction B (one side or the other side of a certain direction B)," unless otherwise specified, is not limited to the case where surface A is at a 90° angle with respect to direction B, but also includes the case where surface A is tilted with respect to direction B. Furthermore, "a surface A is perpendicular to a surface B," unless otherwise specified, is not limited to the case where surface A is at a 90° angle with respect to surface B, but also includes the case where surface A is tilted with respect to surface B.

[0011] 1 to 8 show a semiconductor device A10 according to a first embodiment. The semiconductor device A10 includes a functional assembly ASSY1, a sealing member 50, and a barrier member 70. The functional assembly ASSY1 includes a support member 10, three power terminals 14, 15, and 16, a plurality of signal terminals 171 to 174 and 178, a plurality of semiconductor elements 21 and 22, a plurality of conductive members 31 and 32, and a plurality of connecting members 41 to 44. In the following description, the plurality of signal terminals 171 to 174 and 178 will be referred to as a plurality of signal terminals 17 unless otherwise specified.

[0012] For ease of explanation, the thickness direction z, the first direction x, and the second direction y are referred to as being orthogonal to each other. The thickness direction z corresponds to the thickness direction of the semiconductor device A10. Furthermore, "plan view" refers to the view in the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to the thickness direction z and the first direction x. One side of the first direction x is referred to as the x1 side of the first direction x, and the other side of the first direction x is referred to as the x2 side of the first direction x. Furthermore, one side of the second direction y is referred to as the y1 side of the second direction y, and the other side of the second direction y is referred to as the y2 side of the second direction y. Furthermore, one side of the thickness direction z is referred to as the z1 side of the thickness direction z, and the other side of the thickness direction z is referred to as the z2 side of the thickness direction z. Furthermore, the z1 side of the thickness direction z is sometimes referred to as the upper side, and the z2 side of the thickness direction z is sometimes referred to as the lower side. Note that terms such as "top," "bottom," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each part in the thickness direction z, and are not necessarily terms that define the relationship with the direction of gravity.

[0013] The semiconductor device A10 is a power module that controls current and voltage using a plurality of semiconductor elements 21 and a plurality of semiconductor elements 22. The semiconductor device A10 converts a DC power supply voltage applied to two power terminals 14 and 15 into an AC voltage using the plurality of semiconductor elements 21 and a plurality of semiconductor elements 22. The converted AC voltage is input from the power terminal 16 to a power supply target such as a motor.

[0014] As shown in FIGS. 3 and 6 to 8 , the support member 10 supports a plurality of semiconductor elements 21, 22 in the thickness direction z. The support member 10 is, for example, a DCB (Direct Copper Bonding) substrate. Alternatively, the support member 10 may be an AMB (Active Metal Brazing) substrate. The support member 10 includes an insulating substrate 11, a main surface wiring layer 12, and a back surface wiring layer 13. As shown in FIGS. 6 to 8 , the support member 10 is covered with a sealing member 50 except for a portion of the back surface wiring layer 13.

[0015] 6 to 8, the insulating substrate 11 is interposed between the main surface wiring layer 12 and the back surface wiring layer 13 in the thickness direction z. The insulating substrate 11 supports a plurality of semiconductor elements 21, 22 via the main surface wiring layer 12. The insulating substrate 11 includes a material with relatively high thermal conductivity. The insulating substrate 11 is made of ceramics including aluminum nitride (AlN), for example. The insulating substrate 11 may include an insulating resin sheet in addition to ceramics.

[0016] As shown in Figures 6 to 8, the insulating substrate 11 has a substrate main surface 11a and a substrate back surface 11b. The substrate main surface 11a and the substrate back surface 11b are spaced apart in the thickness direction z. The substrate main surface 11a and the substrate back surface 11b face opposite each other in the thickness direction z. The substrate main surface 11a faces upward in the thickness direction z, and the substrate back surface 11b faces downward in the thickness direction z. The substrate main surface 11a faces each of the multiple semiconductor elements 21 and 22.

[0017] As shown in Figures 6 to 8, the main surface wiring layer 12 is located above (on the z1 side of) the insulating substrate 11 in the thickness direction z. The main surface wiring layer 12 is in contact with and bonded to the substrate main surface 11a. The main surface wiring layer 12 contains copper (Cu), but may contain other metals. In a plan view, the main surface wiring layer 12 is surrounded by the periphery of the insulating substrate 11. As shown in Figure 3, the main surface wiring layer 12 includes a plurality of conductor portions 121 to 127, 129. The plurality of conductor portions 121 to 127, 129 are spaced apart from one another.

[0018] A main current flows through the plurality of conductor portions 121 to 123. The main current is a current corresponding to the power before and after conversion by the switching operations of the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22. The switching operations of the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 will be described later.

[0019] 3, the conductor portion 121 includes two pad portions 121a and 121b. The two pad portions 121a and 121b are integrally formed.

[0020] A plurality of semiconductor elements 21 are bonded to the pad portion 121a. In the illustrated example, the pad portion 121a has a rectangular shape in a plan view, but the shape of the pad portion 121a in a plan view is not limited in any way. The pad portion 121a extends in the first direction x in a plan view. A power terminal 14 is bonded to the pad portion 121b. In the illustrated example, the pad portion 121b has a rectangular shape in a plan view, but the shape of the pad portion 121b in a plan view is not limited in any way. The pad portion 121b extends in the second direction y in a plan view. The pad portion 121b is connected to the edge of the pad portion 121a on the x1 side in the first direction x.

[0021] 3, the conductor portion 122 includes two pad portions 122a and 122b. The two pad portions 122a and 122b are integrally formed.

[0022] A plurality of conductive members 32 are bonded to the pad portion 122a. In the illustrated example, the pad portion 122a has a rectangular shape in a planar view, but the shape of the pad portion 122a in a planar view is not limited in any way. The pad portion 122a extends in the first direction x in a planar view. A power terminal 15 is bonded to the pad portion 122b. In the illustrated example, the pad portion 122b has a rectangular shape in a planar view, but the shape of the pad portion 122b in a planar view is not limited in any way. The pad portion 122b extends in the second direction y in a planar view. The pad portion 122b is connected to the edge of the pad portion 122a on the x1 side in the first direction x.

[0023] 3, the conductor portion 123 includes two pad portions 123a and 123b. The two pad portions 123a and 123b are integrally formed.

[0024] A plurality of semiconductor elements 22 are bonded to the pad portion 123a. A plurality of conductive members 31 are also bonded to the pad portion 123a. In the illustrated example, the pad portion 123a has a rectangular shape in a planar view, but the shape of the pad portion 123a in a planar view is not limited in any way. The pad portion 123a extends in the first direction x in a planar view. A power terminal 16 is bonded to the pad portion 123b. In the illustrated example, the pad portion 123b has a rectangular shape in a planar view, but the shape of the pad portion 123b in a planar view is not limited in any way. The pad portion 123b extends in the second direction y in a planar view. The pad portion 123b is connected to the edge of the pad portion 123a on the x2 side in the first direction x.

[0025] In the illustrated example, the three pad portions 121a, 122a, and 123a are arranged along the second direction y. The three pad portions 121a, 122a, and 123a are arranged approximately parallel to one another. In the second direction y, the pad portion 123a is located between the pad portions 121a and 122a. In the second direction y, the pad portion 121a is located on the y1 side of the pad portion 123a in the second direction y, and the pad portion 122a is located on the y2 side of the pad portion 123a in the second direction y. Furthermore, the two pad portions 121b and 122b are arranged along the second direction y. The pad portion 121b is located on the y1 side of the pad portion 122b in the second direction y. The two pad portions 121b and 122b are located on the x1 side of the three pad portions 121a, 122a, and 123a in the first direction x. The pad portion 123b is located on the x2 side of the two pad portions 121a and 123a in the first direction x. The shapes and arrangements of the three conductor portions 121 to 123 are not limited to the example shown in the drawing.

[0026] Signals for controlling the switching operations of the semiconductor elements 21 or the semiconductor elements 22 are transmitted to the conductors 124 to 127 .

[0027] Each of the plurality of connection members 41 is joined to the conductor portion 124. The conductor portion 124 is electrically connected to each semiconductor element 21 (main surface electrode 213 described below) via the plurality of connection members 41. The conductor portion 124 is located on the opposite side of the pad portion 121a of the conductor portion 121 from the pad portion 123b of the conductor portion 123 in the second direction y. The conductor portion 124 has a strip shape extending in the first direction x in a plan view.

[0028] Each of the plurality of connection members 42 is joined to the conductor portion 125. The conductor portion 125 is electrically connected to each semiconductor element 22 (main surface electrode 223 described below) via the plurality of connection members 42. The conductor portion 125 is located on the opposite side of the pad portion 122a of the conductor portion 122 from the pad portion 123b of the conductor portion 123 in the second direction y. The conductor portion 125 has a strip shape extending in the first direction x in a plan view.

[0029] Each of the plurality of connection members 43 is joined to the conductor portion 126. The conductor portion 126 is electrically connected to each semiconductor element 21 (main surface electrode 212 described below) via the plurality of connection members 43. The conductor portion 126 is located on the opposite side of the pad portion 121a of the conductor portion 121 in the second direction y, with the conductor portion 124 as the reference. The conductor portion 126 has a strip shape extending in the first direction x in a plan view. The conductor portion 126 is parallel to the conductor portion 125. Note that the positional relationship between the conductor portion 124 and the conductor portion 126 may be reversed.

[0030] Each of the plurality of connection members 44 is joined to the conductor portion 127. The conductor portion 127 is electrically connected to each semiconductor element 22 (main surface electrode 222 described below) via the plurality of connection members 44. The conductor portion 127 is located on the opposite side of the pad portion 122a of the conductor portion 122 with respect to the conductor portion 125 in the second direction y. The conductor portion 127 has a strip shape extending in the first direction x in a plan view. The conductor portion 127 is parallel to the conductor portion 126. Note that the positional relationship between the conductor portion 125 and the conductor portion 127 may be reversed.

[0031] Each of the plurality of conductor portions 129 is not electrically connected to either the plurality of semiconductor elements 21 or the plurality of semiconductor elements 22. The plurality of conductor portions 129 includes one arranged on the x1 side of the two conductor portions 124, 126 in the first direction x, and one arranged on the x2 side of the two conductor portions 125, 127 in the first direction x.

[0032] As shown in FIGS. 6 to 8 , the back surface wiring layer 13 is located below the insulating substrate 11 in the thickness direction z (on the z2 side). The back surface wiring layer 13 is in contact with and bonded to the substrate back surface 11b. The composition of the back surface wiring layer 13 includes copper (Cu), similar to the main surface wiring layer 12, but may be other metals. Unlike this example, the composition of the back surface wiring layer 13 may be different from that of the main surface wiring layer 12. As shown in FIGS. 6 to 8 , the lower surface of the back surface wiring layer 13 (the surface facing downward in the thickness direction z) is exposed from the sealing member 50 (the resin rear surface 52 described below). In this example, a heat dissipation member (e.g., a heat sink) (not shown) may be bonded to the lower surface of the back surface wiring layer 13. In the illustrated example, the back surface wiring layer 13 is rectangular in plan view. The back surface wiring layer 13 is surrounded by the periphery of the insulating substrate 11 in plan view.

[0033] The main surface wiring layer 12 and the back surface wiring layer 13 are metal bodies individually bonded to both surfaces of the insulating substrate 11 in the thickness direction z. In the main surface wiring layer 12, the metal body is divided into multiple conductor portions (two conductor portions 121, 122) by patterning. That is, the two conductor portions 121, 122 are patterns of metal bodies formed on the substrate main surface 11a of the insulating substrate 11. Note that, unlike this example, the main surface wiring layer 12 may be bonded to the insulating substrate 11 after being patterned into the two conductor portions 121, 122. In an example where the support member 10 is a DCB substrate, the main surface wiring layer 12 and the back surface wiring layer 13 are each bonded to the insulating substrate 11 by a direct bonding method. In an example where the support member 10 is an AMB substrate, unlike this example, the main surface wiring layer 12 and the back surface wiring layer 13 are each bonded by an active metal bonding method.

[0034] The plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 may be other transistors such as insulated gate bipolar transistors (IGBTs) and bipolar transistors, or diodes. In this embodiment, the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 are each n-channel MOSFETs with a vertical structure.

[0035] The plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 each include a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon (Si), a wide bandgap semiconductor with a wider bandgap than Si, or an ultra-wide bandgap semiconductor with an even wider bandgap than the wide bandgap semiconductor. Wide bandgap semiconductors include, but are not limited to, silicon carbide (SiC) and gallium nitride (GaN). Ultra-wide bandgap semiconductors include, but are not limited to, gallium oxide (GaO), diamond, and aluminum nitride (AlN). In this embodiment, the composition of each compound semiconductor substrate of the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 includes SiC. Note that the types and compositions of the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22 are not limited to being the same, and may be different.

[0036] 3, 6, 8, etc., the semiconductor elements 21 are mounted on the conductor portions 121 (pad portions 121a) of the semiconductor elements 21. The semiconductor elements 21 are arranged along the first direction x.

[0037] As shown in FIGS. 4, 6, and 8, each of the multiple semiconductor elements 21 has an element main surface 21a, an element back surface 21b, and multiple element side surfaces 21c. The element main surface 21a, element back surface 21b, and multiple element side surfaces 21c described below are common to each semiconductor element 21 unless otherwise specified. The element main surface 21a and the element back surface 21b are spaced apart in the thickness direction z. The element main surface 21a and the element back surface 21b face opposite each other in the thickness direction z. The element main surface 21a faces upward in the thickness direction z, and the element back surface 21b faces downward in the thickness direction z. The element main surface 21a faces the same direction as the substrate main surface 11a in the thickness direction z. The element back surface 21b faces the support member 10. In the illustrated example, the semiconductor element 21 is rectangular in plan view. In this example, the element main surface 21a and the element back surface 21b are each rectangular in plan view. The planar shape of the semiconductor element 21 is not limited to a rectangle. Each of the multiple element side surfaces 21c is located between the element main surface 21a and the element back surface 21b in the thickness direction z and is connected to them. Each of the multiple element side surfaces 21c faces a direction perpendicular to the thickness direction z. In an example in which the semiconductor element 21 has a rectangular planar shape, the semiconductor element 21 has four element side surfaces 21c as shown in FIG. 4. Two of the four element side surfaces 21c are spaced apart in the first direction x and face opposite sides to each other in the first direction x, and the other two of the four element side surfaces 21c are spaced apart in the second direction y and face opposite sides to each other in the second direction y.

[0038] Each of the semiconductor elements 21 has a back surface electrode 211 and a plurality of principal surface electrodes 212, 213. The back surface electrode 211 and the plurality of principal surface electrodes 212, 213 described below are common to all the semiconductor elements 21 unless otherwise specified.

[0039] 6 and 8, the back surface electrode 211 is disposed on the element back surface 21b and exposed thereon. As shown in Fig. 6 and 8, the plurality of principal surface electrodes 212, 213 are disposed on the element main surface 21a and exposed thereon. Unlike the illustrated example, the principal surface electrode 212 may be divided into a plurality of regions in a plan view. The area of ​​the principal surface electrode 213 in a plan view is smaller than the area of ​​the principal surface electrode 212 in a plan view.

[0040] Each semiconductor element 21 switches between an ON state and an OFF state in response to a drive signal input to the principal surface electrode 213. The operation of each semiconductor element 21 alternately switching between the ON state and the OFF state is called a switching operation. In the ON state, the back surface electrode 211 and the principal surface electrode 212 are electrically connected, and in the OFF state, the back surface electrode 211 and the principal surface electrode 212 are electrically disconnected. In each semiconductor element 21, the back surface electrode 211 and the principal surface electrode 212 are electrically connected in response to a drive signal input to the principal surface electrode 213. In an example in which each semiconductor element 21 is a MOSFET, the back surface electrode 211 is a drain electrode, the principal surface electrode 212 is a source electrode, and the principal surface electrode 213 is a gate electrode.

[0041] The functional assembly ASSY1 further includes a plurality of conductive bonding layers 219. As shown in FIGS. 6 and 8 , each of the plurality of semiconductor elements 21 is bonded to the conductor portion 121 (pad portion 121 a) by a corresponding one of the plurality of conductive bonding layers 219. Each of the plurality of conductive bonding layers 219 is interposed between the back electrode 211 of the corresponding semiconductor element 21 and the conductor portion 121, thereby establishing electrical continuity therebetween. Each of the conductive bonding layers 219 is, for example, solder. Alternatively, each of the conductive bonding layers 219 may include a sintered body of metal particles.

[0042] 7 and 8, the semiconductor elements 22 are mounted on the conductor portions 123 (pad portions 123a) of the semiconductor elements 22. The semiconductor elements 22 are arranged along the first direction x.

[0043] As shown in FIGS. 5, 7, and 8, each of the semiconductor elements 22 has a primary surface 22a, a rear surface 22b, and multiple side surfaces 22c. The primary surface 22a, rear surface 22b, and multiple side surfaces 22c described below are common to all semiconductor elements 22 unless otherwise specified. The primary surface 22a and the rear surface 22b are spaced apart in the thickness direction z. The primary surface 22a and the rear surface 22b face opposite each other in the thickness direction z. The primary surface 22a faces upward in the thickness direction z, and the rear surface 22b faces downward in the thickness direction z. The primary surface 22a faces the same direction as the substrate primary surface 11a in the thickness direction z. The rear surface 22b faces the support member 10. In the illustrated example, the semiconductor element 22 is rectangular in plan view. In this example, the primary surface 22a and the rear surface 22b are each rectangular in plan view. The planar shape of the semiconductor element 22 is not limited to a rectangle. Each of the multiple element side surfaces 22c is located between the element main surface 22a and the element back surface 22b in the thickness direction z and is connected to them. Each of the multiple element side surfaces 22c faces a direction perpendicular to the thickness direction z. In an example in which the semiconductor element 22 has a rectangular planar shape, the semiconductor element 22 has four element side surfaces 22c as shown in FIG. 5. Two of the four element side surfaces 22c are spaced apart in the first direction x and face opposite sides to each other in the first direction x, and the other two of the four element side surfaces 22c are spaced apart in the second direction y and face opposite sides to each other in the second direction y.

[0044] 7 and 8, each of the semiconductor elements 22 has a back surface electrode 221 and a plurality of principal surface electrodes 222, 223. The back surface electrode 211 and the plurality of principal surface electrodes 222, 223 described below are common to all the semiconductor elements 22 unless otherwise specified.

[0045] 7 and 8, the back surface electrode 221 is disposed on the element back surface 22b and exposed thereon. As shown in FIGS. 7 and 8, the plurality of principal surface electrodes 222, 223 are disposed on the element main surface 22a and exposed thereon. Unlike the illustrated example, the principal surface electrode 222 may be divided into a plurality of regions in a plan view. The area of ​​the principal surface electrode 223 in a plan view is smaller than the area of ​​the principal surface electrode 222 in a plan view.

[0046] Each semiconductor element 22 switches between an ON state and an OFF state in response to a drive signal input to the principal surface electrode 223. The operation of each semiconductor element 22 alternately switching between the ON state and the OFF state is called a switching operation. In the ON state, the back surface electrode 221 and the principal surface electrode 222 are electrically connected, and in the OFF state, the back surface electrode 221 and the principal surface electrode 222 are electrically disconnected. In each semiconductor element 22, the back surface electrode 221 and the principal surface electrode 222 are electrically connected in response to a drive signal input to the principal surface electrode 223. In an example in which each semiconductor element 22 is a MOSFET, the back surface electrode 221 is a drain electrode, the principal surface electrode 222 is a source electrode, and the principal surface electrode 223 is a gate electrode.

[0047] The functional assembly ASSY1 further includes a plurality of conductive bonding layers 229. As shown in Figures 7 and 8, each of the plurality of semiconductor elements 22 is bonded to the conductor portion 123 (pad portion 123a) by a corresponding one of the plurality of conductive bonding layers 229. Each of the plurality of conductive bonding layers 229 is interposed between the back electrode 221 of the corresponding semiconductor element 22 and the conductor portion 123, providing electrical continuity therebetween. Each of the conductive bonding layers 229 is, for example, solder. Alternatively, each of the conductive bonding layers 229 may include a sintered body of metal particles.

[0048] In the functional assembly ASSY1, the back electrodes 211 (drain electrodes) of the multiple semiconductor elements 21 are electrically connected, and the main surface electrodes 212 (source electrodes) are electrically connected. That is, the multiple semiconductor elements 21 are electrically connected in parallel with each other. In the multiple semiconductor elements 22, the back electrodes 221 (drain electrodes) of the multiple semiconductor elements 22 are electrically connected, and the main surface electrodes 222 (source electrodes) are electrically connected. That is, the multiple semiconductor elements 22 are electrically connected in parallel with each other. Furthermore, in the functional assembly ASSY1, the back electrodes 211 (drain electrodes) of the multiple semiconductor elements 21 are electrically connected to the main surface electrodes 222 (source electrodes) of the multiple semiconductor elements 22. That is, the multiple semiconductor elements 21 and the multiple semiconductor elements 22 are connected in series. The functional assembly ASSY1 forms a half-bridge circuit in which the multiple semiconductor elements 21 form an upper arm circuit and the multiple semiconductor elements 22 form a lower arm circuit.

[0049] Each of the plurality of conductive members 31, 32 is a conductive path for the main current. Each of the plurality of conductive members 31, 32 is a metal plate (metal clip). The composition of each of the plurality of conductive members 31, 32 may include, for example, copper, but is not limited to this.

[0050] 3 and 8, the plurality of conductive members 31 are individually bonded to the principal surface electrodes 212 and the conductor portions 123 (pad portions 123a) of the plurality of semiconductor elements 21. The principal surface electrodes 212 and the conductor portions 123 of each semiconductor element 21 are electrically connected via the corresponding conductive member 31. In the illustrated example, a portion of each of the plurality of conductive members 31 is bent in the thickness direction z.

[0051] 3 and 8, the plurality of conductive members 32 are individually bonded to the principal surface electrodes 222 of the plurality of semiconductor elements 22 and the conductor portions 122 (pad portions 122a). The principal surface electrodes 222 and the conductor portions 122 of each semiconductor element 22 are electrically connected via the corresponding conductive member 32. In the illustrated example, a portion of each of the plurality of conductive members 32 is bent in the thickness direction z.

[0052] Each of the plurality of power terminals 14, 15, and 16 is electrically connected to one of the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22. Each of the plurality of power terminals 14, 15, and 16 is a metal plate. Each of the plurality of power terminals 14, 15, and 16 may include, for example, copper, but is not limited to this. A main current flows through each of the plurality of power terminals 14, 15, and 16. Note that in the semiconductor device A10, the number of the plurality of power terminals 14, 15, and 16 is not limited to the example shown in the figure.

[0053] The power terminal 14 is joined to the conductor portion 121 (pad portion 121b). This joining is not limited in any way and may be joined using a conductive bonding material (e.g., solder or sintered metal), laser welding, or crimping. In the example shown in FIG. 6 , the power terminal 14 is joined to the pad portion 121b of the conductor portion 121 by a conductive bonding material 149. The power terminal 14 is supported by the conductor portion 121. The power terminal 14 is electrically connected to back electrodes 211 (drain electrodes of the upper arm circuits) of the multiple semiconductor elements 21 via the conductor portion 121. The power terminal 14 is a P terminal (positive terminal) to which a DC power supply voltage to be converted into power is applied. The power terminal 14 extends from the conductor portion 121 toward the x1 side in the first direction x and protrudes from the sealing member 50 toward the x1 side in the first direction x.

[0054] 3 and 6 , the power terminal 14 includes an exposed portion 141 and a covered portion 142. The exposed portion 141 is a portion of the power terminal 14 that is exposed from the sealing member 50. In the power terminal 14, the exposed portion 141 is used as the P terminal described above. The covered portion 142 is a portion of the power terminal 14 that is covered by the sealing member 50. In the power terminal 14, the covered portion 142 is joined to the conductor portion 121 (pad portion 121b). In the illustrated example, the covered portion 142 includes a portion that is connected to the exposed portion 141, a portion that is bent in the thickness direction z, and a portion that is joined to the conductor portion 121 (pad portion 121b).

[0055] The power terminal 15 is joined to the conductor portion 122 (pad portion 122b). This joining method is not limited in any way and may be joined using a conductive bonding material (e.g., solder or sintered metal), laser welding, or crimping. In the example shown in FIG. 7 , the power terminal 15 is joined to the pad portion 122b of the conductor portion 122 by a conductive bonding material 159. The power terminal 15 is supported by the conductor portion 122. The power terminal 15 is electrically connected to the main surface electrodes 222 (source electrodes of the lower arm circuits) of the multiple semiconductor elements 22 via the conductor portion 122 and multiple conductive members 32. The power terminal 15 is an N-terminal (negative terminal) to which a DC power supply voltage to be converted into power is applied. The power terminal 15 extends from the conductor portion 122 toward the x1 side in the first direction x and protrudes from the sealing member 50 toward the x1 side in the first direction x.

[0056] 3 and 7 , the power terminal 15 includes an exposed portion 151 and a covered portion 152. The exposed portion 151 is a portion of the power terminal 15 that is exposed from the sealing member 50. In the power terminal 15, the exposed portion 151 is used as the N-terminal described above. The covered portion 152 is a portion of the power terminal 15 that is covered by the sealing member 50. In the power terminal 15, the covered portion 152 is joined to the conductor portion 122 (pad portion 122b). In the illustrated example, the covered portion 152 includes a portion that connects to the exposed portion 151, a portion that bends in the thickness direction z, and a portion that is joined to the conductor portion 122 (pad portion 122b).

[0057] The power terminal 16 is bonded to the conductor portion 123 (pad portion 123b). This bonding method is not limited in any way and may be bonded using a conductive bonding material (e.g., solder or sintered metal), laser welding, or crimping. In the example shown in FIG. 7 , the power terminal 16 is bonded to the pad portion 123b of the conductor portion 123 by a conductive bonding material 169. The power terminal 16 is supported by the conductor portion 123. The power terminal 16 is electrically connected to back electrodes 221 (drain electrodes of the lower arm circuit) of the multiple semiconductor elements 22 via the conductor portion 123, and is also electrically connected to main surface electrodes 212 (source electrodes of the upper arm circuit) of the multiple semiconductor elements 21 via the conductor portion 123 and multiple conductive members 31. AC power converted by the multiple semiconductor elements 21 and the multiple semiconductor elements 22 is output from the power terminal 16. In other words, the power terminal 16 is an output terminal for the AC power. The power terminal 16 extends from the conductor portion 123 toward the x2 side in the first direction x, and protrudes from the sealing member 50 toward the x2 side in the first direction x.

[0058] As shown in Figure 7 and other figures, the power terminal 16 includes an exposed portion 161 and a covered portion 162. The exposed portion 161 is a portion of the power terminal 16 that is exposed from the sealing member 50. In the power terminal 16, the exposed portion 161 is used as the output terminal described above. The covered portion 162 is a portion of the power terminal 16 that is covered by the sealing member 50. In the power terminal 16, the covered portion 162 is joined to the conductor portion 123 (pad portion 123b). In the illustrated example, the covered portion 162 includes a portion that is connected to the exposed portion 161, a portion that is bent in the thickness direction z, and a portion that is joined to the conductor portion 123 (pad portion 123b).

[0059] Each of the plurality of connection members 41 to 44 electrically connects two parts spaced apart from each other. Each of the plurality of connection members 41 to 44 is, for example, a bonding wire. Unlike this example, each of the plurality of connection members 41 to 44 may be a metal plate material. Each of the plurality of connection members 41 to 44 contains gold (Au). Each of the plurality of connection members 41 to 44 may contain copper or aluminum. Note that the plurality of connection members 41 to 44 are omitted from FIGS. 6 and 7.

[0060] 3, the plurality of connection members 41 electrically connect the principal surface electrodes 213 of the plurality of semiconductor elements 21 to the conductor portion 124. The plurality of connection members 41 are individually bonded to the principal surface electrodes 213 of the plurality of semiconductor elements 21, respectively, and are also bonded to the conductor portion 124.

[0061] 3, the plurality of connection members 42 electrically connect the principal surface electrodes 223 of the plurality of semiconductor elements 22 to the conductor portion 125. The plurality of connection members 42 are individually bonded to the principal surface electrodes 223 of the plurality of semiconductor elements 22, respectively, and are also bonded to the conductor portion 125.

[0062] 3 , the plurality of connection members 43 electrically connect the principal surface electrodes 212 of the plurality of semiconductor elements 21 to the conductor portion 126. The plurality of connection members 43 are individually bonded to the principal surface electrodes 212 of the plurality of semiconductor elements 21, respectively, and are also bonded to the conductor portion 126.

[0063] 3, the plurality of connection members 44 electrically connect the principal surface electrodes 222 of the plurality of semiconductor elements 22 to the conductor portion 127. The plurality of connection members 44 are individually bonded to the principal surface electrodes 222 of the plurality of semiconductor elements 22, respectively, and are also bonded to the conductor portion 127.

[0064] As shown in FIGS. 3 and 8 , each of the signal terminals 17 includes a portion covered by the sealing member 50 and a portion protruding from the sealing member 50. Each of the signal terminals 17 is bonded to the main surface wiring layer 12 inside the sealing member 50. As shown in FIG. 8 , each of the signal terminals 17 is bonded to the main surface wiring layer 12 by a conductive bonding material 179. The conductive bonding material 179 may be, for example, solder, sintered metal, or an insert metal for solid-state diffusion bonding. The signal terminals 17 may be formed, for example, from the same lead frame as the power terminals 14, 15, and 16. Each of the signal terminals 17 may be made of a metal plate. Each of the signal terminals 17 may include, for example, copper, but is not limited to this.

[0065] 3 and 8 , the signal terminal 171 is joined to the conductor portion 124. The signal terminal 171 is electrically connected to the main surface electrodes 213 of the plurality of semiconductor elements 21 via the conductor portion 124 and the plurality of connection members 41. A drive signal for driving each semiconductor element 21 (for example, a gate voltage) is input to the signal terminal 171.

[0066] 3 and 8 , the signal terminal 172 is joined to the conductor portion 125. The signal terminal 172 is electrically connected to the main surface electrodes 223 of the plurality of semiconductor elements 22 via the conductor portion 125 and the plurality of connection members 42. A drive signal for driving each semiconductor element 22 (for example, a gate voltage) is input to the signal terminal 172.

[0067] 3 , the signal terminal 173 is joined to the conductor portion 126. The signal terminal 173 is electrically connected to the principal surface electrodes 212 of the plurality of semiconductor elements 21 via the conductor portion 126 and the plurality of connecting members 43. A voltage corresponding to the following current is applied to the signal terminal 173. This is the maximum current among the currents flowing through the principal surface electrodes 212 of the plurality of semiconductor elements 21.

[0068] 3 , the signal terminal 174 is joined to the conductor portion 127. The signal terminal 174 is electrically connected to the main surface electrodes 222 of the plurality of semiconductor elements 22 via the conductor portion 127 and the plurality of connecting members 44. A voltage corresponding to the following current is applied to the signal terminal 174. This is the maximum current among the currents flowing through the main surface electrodes 222 of the plurality of semiconductor elements 22.

[0069] 3, the plurality of signal terminals 178 are individually joined to the plurality of conductor portions 129. Each of the plurality of signal terminals 178 is not electrically connected to either the plurality of semiconductor elements 21 or the plurality of semiconductor elements 22. Each of the plurality of signal terminals 178 is a non-connect terminal.

[0070] As shown in FIGS. 6 to 8 , the sealing member 50 covers the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22. The sealing member 50 contacts the functional assembly ASSY1 described above. The sealing member 50 covers the support member 10 (excluding the lower surface of the back surface wiring layer 13), portions of the plurality of power terminals 14, 15, and 16, portions of the plurality of signal terminals 17, the plurality of conductive members 31 and 32, and the plurality of connecting members 41 to 44. The sealing member 50 also covers the plurality of conductive bonding layers 219 and 229 and the plurality of conductive bonding materials 149, 159, and 169. The sealing member 50 is electrically insulating. The sealing member 50 has a resin main surface 51, a resin back surface 52, and a plurality of resin side surfaces 531 to 534.

[0071] As shown in FIGS. 6 to 8 , the resin main surface 51 and the resin back surface 52 are spaced apart in the thickness direction z. The resin main surface 51 and the resin back surface 52 face opposite each other in the thickness direction z. The resin main surface 51 faces upward (toward z1) in the thickness direction z, and the resin back surface 52 faces downward (toward z2) in the thickness direction z. The resin main surface 51 faces in the same direction as the substrate main surface 11a, the element main surface 21a, and the element main surface 22a in the thickness direction z. Each of the multiple signal terminals 17 protrudes upward in the thickness direction z from the resin main surface 51. As shown in FIGS. 6 to 8 , the back wiring layer 13 of the support member 10 is exposed from the resin back surface 52.

[0072] The multiple resin side surfaces 531 to 534 are each connected to the resin main surface 51 and the resin back surface 52. As shown in Figures 2 and 3, the pair of resin side surfaces 531, 532 are spaced apart in the first direction x. The resin side surface 531 faces the x1 side of the first direction x, and the resin side surface 532 faces the x2 side of the first direction x. Each of the pair of resin side surfaces 531, 532 extends in the second direction y. Two power terminals 14, 15 each protrude from the resin side surface 531. The power terminal 16 protrudes from the resin side surface 532. As shown in Figures 2 and 3, the pair of resin side surfaces 533, 534 are spaced apart in the second direction y. The resin side surface 533 faces the y1 side of the second direction y, and the resin side surface 534 faces the y2 side of the second direction y. Each of the pair of resin side surfaces 533, 534 extends in the first direction x. Two signal terminals 171 and 173 protrude from the resin side surface 533. Two signal terminals 172 and 174 protrude from the resin side surface 534. Some of the multiple signal terminals 178 protrude from the resin side surface 533, and the remaining signal terminals 178 protrude from the resin side surface 534. Note that each of the multiple signal terminals 17 may be configured to protrude from the resin main surface 51, rather than from either of the pair of resin side surfaces 533 and 534.

[0073] As shown in FIGS. 6 to 8 , the sealing member 50 includes a covering portion 501 and a sealing portion 502. The covering portion 501 and the sealing portion 502 each include, for example, an insulating resin material. The insulating resin material is not limited to, but may be, for example, an epoxy resin. Furthermore, the insulating resin (e.g., epoxy resin) in the sealing portion 502 contains a silica filler, while the insulating resin (e.g., epoxy resin) in the covering portion 501 does not contain a silica filler. For example, the silica filler content in the sealing portion 502 is 80% or more and 90% or less. Note that the covering portion 501 may be made of a rubber material instead of a silica filler-free resin.

[0074] The covering portion 501 covers the entire surface of the functional assembly ASSY1 that faces the sealing portion 502. In this disclosure, unless otherwise specified, "covering the entire surface" is not limited to strictly covering the entire surface, and may include portions that cannot be covered due to manufacturing precision or other factors. For example, the covering portion 501 covers each of the main surfaces 21a and side surfaces 21c of the semiconductor elements 21 and each of the main surfaces 22a and side surfaces 22c of the semiconductor elements 22. The covering portion 501 covers each of the top and side surfaces (surfaces parallel to the thickness direction z) of the conductive members 31 and 32. The covering portion 501 covers the covering portion 142 of the power terminal 14, the covering portion 152 of the power terminal 15, and the covering portion 162 of the power terminal 16. The covering portion 501 covers portions of the signal terminals 17 that are located inside the sealing member 50. The covering portion 501 covers the connecting members 41 to 44. In an example in which each of the plurality of connection members 41 to 44 is a bonding wire, the covering portion 501 covers the outer peripheral surfaces of the plurality of connection members 41 to 44 (bonding wires). Note that the surfaces (bonding surfaces) of the connection members 41 to 44 that contact other members are not covered by the covering portion 501. The covering portion 501 covers the upper surface of the main-surface wiring layer 12 and the portion of the substrate main surface 11a of the insulating substrate 11 that is exposed from the main-surface wiring layer 12 with respect to the support member 10.

[0075] The covering portion 501 also covers the entirety of each of the plurality of conductive bonding layers 219 and the plurality of conductive bonding layers 229. In a plan view, the covering portion 501 covers the portion of each conductive bonding layer 219 that protrudes from the corresponding semiconductor element 21. As shown in FIG. 4 , the covering portion 501 covers the entire periphery 219a of each conductive bonding layer 219. Therefore, the covering portion 501 covers the four corners (four corners 219b) of each conductive bonding layer 219 in a plan view. The covering portion 501 also covers the portion of each conductive bonding layer 229 that protrudes from the corresponding semiconductor element 22 in a plan view. As shown in FIG. 5 , the covering portion 501 covers the entire periphery 229a of each conductive bonding layer 229. Therefore, the covering portion 501 covers the four corners (four corners 229b) of each conductive bonding layer 229 in a plan view.

[0076] Furthermore, the covering portion 501 covers the plurality of conductive bonding materials 149, 159, 169, and 179. In plan view, the covering portion 501 covers the portion of the conductive bonding material 149 that protrudes from the power terminal 14 (covering portion 142). In plan view, the covering portion 501 covers the portion of the conductive bonding material 159 that protrudes from the power terminal 15 (covering portion 152). In plan view, the covering portion 501 covers the portion of the conductive bonding material 169 that protrudes from the power terminal 16 (covering portion 162).

[0077] The sealing portion 502 can be formed on the covering portion 501. The sealing portion 502 covers the functional assembly ASSY1 via the covering portion 501. The sealing portion 502 is located outward from the covering portion 501. In this embodiment, the sealing portion 502 contacts the covering portion 501. The thickness of the sealing portion 502 is greater than the thickness of the covering portion 501.

[0078] The methods for forming the covering portion 501 and the sealing portion 502 are not limited in any way, but for example, the covering portion 501 is formed by compression molding, and the sealing portion 502 is formed by transfer molding. Unlike this example, the covering portion 501 may be formed by, for example, other molding, potting, or coating. Also, unlike this example, the sealing portion 502 may be formed by, for example, other molding. The covering portion 501 is formed before the sealing portion 502. Also, the covering portion 501 is formed after the two connecting members 41, 42 are joined.

[0079] In semiconductor device A10, the plastic strain range of covering portion 501 is larger than the plastic strain range of sealing portion 502. The values ​​of the plastic strain ranges of covering portion 501 and sealing portion 502 are not limited as long as they satisfy the above-mentioned relationship, but for example, when the internal temperature of covering portion 501 is 100° C. or higher, the plastic strain range of covering portion 501 is 5% or higher. The plastic strain range of sealing portion 502 is approximately 0% regardless of the internal temperature of sealing portion 502.

[0080] The plastic strain region will now be described with reference to FIG. 9 . FIG. 9 is a characteristic curve showing the relationship between stress and strain for a certain material. When stress is applied to a certain material, strain occurs in the material. However, until the yield point, when the stress is removed, the strain becomes zero due to the material's elasticity. On the other hand, once the yield point is passed, strain remains even when the stress is removed. When the applied stress increases the magnitude of strain up to the breaking point, the material breaks. In this characteristic curve, the elastic region is from the base point to the yield point, and the plastic region is from the yield point to the breaking point. The plastic strain region is the percentage of the plastic region in the total range (from the base point to the breaking point) of the elastic and plastic regions combined. Note that the characteristic curve shown in FIG. 9 is an example, and the elastic region, plastic region, yield point, and breaking point vary depending on the material, temperature, etc.

[0081] Furthermore, the difference (absolute value) between the thermal expansion coefficient of the sealing portion 502 and the linear expansion coefficient of the main surface wiring layer 12 is smaller than the difference (absolute value) between the thermal expansion coefficient of the covering portion 501 and the thermal expansion coefficient of the main surface wiring layer 12. For example, in an example where the main surface wiring layer 12 is copper, the thermal expansion coefficient (linear expansion coefficient) of the main surface wiring layer 12 is 2 ppm or more and 25 ppm or less, the thermal expansion coefficient (linear expansion coefficient) of the covering portion 501 is 30 ppm or more and 250 ppm or less, and the thermal expansion coefficient (linear expansion coefficient) of the sealing portion 502 is, for example, 5 ppm or more and 20 ppm or less.

[0082] The interface between the functional assembly ASSY1 and the sealing member 50 has a plurality of exposed ends 80A to 80D that are exposed to the outside.

[0083] The exposed end 80A is a portion that is exposed to the outside at the interface between each surface (top, bottom, and side) of the power terminal 14 of the functional assembly ASSY1 and the sealing member 50. In an example in which the power terminal 14 protrudes from the resin side surface 531, the exposed end 80A is located on the resin side surface 531.

[0084] The exposed end 80B is a portion that is exposed to the outside at the interface between each surface (top, bottom, and side) of the power terminal 15 of the functional assembly ASSY1 and the sealing member 50. In an example in which the power terminal 15 protrudes from the resin side surface 531, the exposed end 80B is located on the resin side surface 531.

[0085] The exposed end 80C is a portion that is exposed to the outside at the interface between each surface (top, bottom, and side) of the power terminal 16 of the functional assembly ASSY1 and the sealing member 50. In an example in which the power terminal 16 protrudes from the resin side surface 532, the exposed end 80C is located on the resin side surface 532.

[0086] The exposed end portions 80D are portions that are exposed to the outside at the interface between each of the surfaces (top, bottom, and side surfaces) of the signal terminals 17 of the functional assembly ASSY1 and the sealing member 50. In an example in which each signal terminal 17 protrudes from either the resin side surface 533 or the resin side surface 534, the exposed end portions 80D are located on either the resin side surface 533 or the resin side surface 534.

[0087] The barrier member 70 is formed on the sealing member 50 and covers at least a portion of the surface of the sealing member 50 that is exposed to the outside. The barrier member 70 covers at least a portion of each of the multiple exposed end portions 80A-80D. The permeability of the barrier member 70 is lower than the permeability of the sealing member 50. In the present disclosure, permeability is an index indicating the ease with which a liquid (e.g., water) and a gas (e.g., oxygen) can penetrate.

[0088] The method for forming the barrier member 70 is not limited in any way, and may be, for example, ion plating or sputtering. The barrier member 70 includes, for example, a material exhibiting the following properties, and is not limited in any way. First, the Young's modulus of the barrier member 70 is higher than that of the sealing member 50. Second, the breaking strain of the barrier member 70 is smaller than that of the sealing member 50. Third, the linear expansion coefficient of the barrier member 70 is smaller than that of the sealing member 50. In this embodiment, the sealing member 50 includes a covering portion 501 and a sealing portion 502, and the characteristic values ​​of the sealing member 50 (Young's modulus, breaking strain, linear expansion coefficient) may be intermediate values ​​or average values ​​of the covering portion 501 and the sealing portion 502.

[0089] In this embodiment, the Young's modulus of the sealing portion 502 is higher than that of the covering portion 501 and lower than that of the barrier member 70. For example, the Young's modulus of the covering portion 501 is 30 MPa or less, and the Young's modulus of the barrier member 70 is 70 GPa or more. The breaking strain of the sealing portion 502 is smaller than that of the covering portion 501 and larger than that of the barrier member 70. For example, the breaking strain of the covering portion 501 is 400% or more, and the breaking strain of the barrier member 70 is 0.2% or less. The linear expansion coefficient of the sealing portion 502 is smaller than that of the covering portion 501 and larger than that of the barrier member 70. For example, the linear expansion coefficient of the covering portion 501 is 20 ppm or more, and the linear expansion coefficient of the barrier member 70 is 7 ppm or less. In an example in which the covering portion 501 is made of a silica filler-free epoxy resin or rubber material and the sealing portion 502 is made of an epoxy resin containing a silica filler, a composition of the barrier member 70 that satisfies these properties is, for example, alumina. That is, the barrier member 70 of this embodiment contains alumina. Unlike this example, the barrier member 70 may contain silica instead of alumina.

[0090] The barrier member 70 includes a plurality of protective portions 71. The protective portions 71 individually cover the plurality of exposed end portions 80A to 80D. As shown in FIGS. 1, 2, and 6 to 8, the protective portion 71 covering the exposed end portion 80A covers the exposed end portion 80A and also covers a portion of the resin side surface 531 near the exposed end portion 80A. The protective portion 71 covering the exposed end portion 80B covers the exposed end portion 80B and also covers a portion of the resin side surface 531 near the exposed end portion 80B. The protective portion 71 covering the exposed end portion 80C covers the exposed end portion 80C and also covers a portion of the resin side surface 532 near the exposed end portion 80C. The protective portion 71 covering the plurality of exposed end portions 80D covers the plurality of exposed end portions 80D and also covers a portion of the resin side surface 533 near each exposed end portion 80D and a portion of the resin side surface 534 near each exposed end portion 80D.

[0091] Next, a method for manufacturing the semiconductor device A10 will be described with reference to Figures 10 to 12. Figures 10 to 12 are cross-sectional views showing a step in the method for manufacturing the semiconductor device A10, and correspond to the cross section of Figure 7.

[0092] First, the functional assembly ASSY1 shown in Fig. 10 is manufactured. Manufacturing the functional assembly ASSY1 includes, for example, a step of preparing a support member 10, a step of mounting a plurality of semiconductor elements 21, 22 on the support member 10, a step of mounting a plurality of power terminals 14-15 and a plurality of signal terminals 17 on the support member 10, a step of joining a plurality of conductive members 31, 32, and a step of forming a plurality of connecting members 41-44.

[0093] Specifically, first, the support member 10 is prepared. Next, a conductive bonding layer 219 is used to bond a plurality of semiconductor elements 21 to the conductor portions 121 (pad portions 121 a) of the main surface wiring layer 12 of the support member 10. Furthermore, a conductive bonding layer 229 is used to bond a plurality of semiconductor elements 22 to the conductor portions 123 (pad portions 123 a) of the main surface wiring layer 12 of the support member 10. Note that the order in which the plurality of semiconductor elements 21 are bonded and the plurality of semiconductor elements 22 are bonded is not limited in any way.

[0094] Next, the plurality of power terminals 14, 15, and 16 are individually bonded to the conductor portion 121 (pad portion 121b), the conductor portion 122 (122b), and the conductor portion 123 (pad portion 123b) of the main surface wiring layer 12 of the support member 10. Furthermore, the plurality of signal terminals 171 to 174 and 178 are individually bonded to the conductor portions 124 to 127 and 129 of the main surface wiring layer 12 of the support member 10. The order of bonding the plurality of power terminals 14 to 16 and the plurality of signal terminals 171 to 174 and 178 is not limited in any way. The plurality of signal terminals 171 to 174 and 178 may be bonded to the corresponding conductor portions 124 to 127 and 129 in an unbent state, or may be bonded to the corresponding conductor portions 124 to 127 and 129 in a bent state.

[0095] Next, the plurality of conductive members 31 are respectively bonded to the corresponding main surface electrodes 212 of the semiconductor element 21 and the conductor portions 123 (pad portions 123 a) of the main surface wiring layer 12 of the support member 10. Furthermore, the plurality of conductive members 32 are respectively bonded to the corresponding main surface electrodes 222 of the semiconductor element 22 and the conductor portions 122 (pad portions 122 a) of the main surface wiring layer 12 of the support member 10. The order in which the plurality of conductive members 31 are bonded and the plurality of conductive members 32 are bonded is not limited in any way.

[0096] Next, a bonding tool (capillary or wedge tool) is used to form the plurality of connection members 41 to 44. The plurality of connection members 41 to 44 may be formed by ball bonding or wedge bonding.

[0097] The functional assembly ASSY 1 can be manufactured through the above processes. Note that the manufacturing method of the functional assembly ASSY 1 is not limited to the above example and can be modified as appropriate. For example, there is no limitation on the order of bonding the semiconductor elements 21, 22, bonding the power terminals 14-16, and bonding the signal terminals 171-174, 178. There is also no limitation on the order of bonding the conductive members 31, 32, bonding the power terminals 14-16, bonding the signal terminals 171-174, 178, and forming the connecting members 42-44.

[0098] After the functional assembly ASSY1 is manufactured, a covering portion 501 is then formed as shown in FIG. 11 . The covering portion 501 is formed, for example, by compression molding. However, unlike this example, the covering portion 501 may also be formed by other molding methods, potting, coating, or the like. The method for forming the covering portion 501 can be changed as appropriate depending on the material of the covering portion 501. As can be seen from FIG. 11 , the covering portion 501 is formed so as to cover the top surface of the functional assembly ASSY1 shown in FIG. 10 . For example, the covering portion 501 covers each semiconductor element 21, 22, a portion of each power terminal 14 to 16, a portion of each signal terminal 171 to 174, 178, the conductive bonding layer 219 protruding from each semiconductor element 21, the conductive bonding layer 229 protruding from each semiconductor element 22, each conductive member 31, 32, each connecting member 41 to 44, the portion of the main surface wiring layer 12 exposed from other members, and the portion of the insulating substrate 11 exposed from the main surface wiring layer 12.

[0099] After the covering portion 501 is formed, the sealing portion 502 is then formed as shown in FIG. 12 . The sealing portion 502 is formed by, for example, transfer molding. Unlike this example, the sealing portion 502 may be formed by other molding methods. The method for forming the sealing portion 502 can be changed as appropriate depending on the material of the sealing portion 502. As shown in FIG. 12 , the sealing portion 502 is formed on the covering portion 501 so as to cover the covering portion 501.

[0100] After the sealing portion 502 is formed, the barrier member 70 is then formed. For example, the barrier member 70 is formed by, for example, ion plating or sputtering on the portion of the interface between the sealing member 50 and the functional assembly ASSY1 that is exposed to the outside (the exposed ends 80A to 80D). In this embodiment, for example, alumina is formed as the barrier member 70.

[0101] The semiconductor device A10 shown in Figures 1 to 8 can be manufactured through the above steps. Note that the above-described method for manufacturing the semiconductor device A10 is an example, and the method is not limited to this.

[0102] The semiconductor device A10 has the following functions and effects.

[0103] The semiconductor device A10 includes a functional assembly ASSY1 including semiconductor elements 21 and 22, a sealing member 50 covering the semiconductor elements 21 and 22 and in contact with the functional assembly ASSY1, and a barrier member 70 having lower permeability than the sealing member 50. The barrier member 70 covers at least a portion of each of exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. With this configuration, the barrier member 70 can prevent liquids (e.g., water) and gases from entering through each of the exposed ends 80A to 80D. This allows the semiconductor device A10 to suppress the intrusion of liquids and gases from outside. Therefore, the semiconductor device A10 can suppress deterioration of the functional assembly ASSY1 and suppress operational malfunctions.

[0104] In the semiconductor device A10, the interface between the functional assembly ASSY1 and the sealing member 50 includes a plurality of exposed ends 80A-80D, and the barrier member 70 covers all of the plurality of exposed ends 80A-80D. With this configuration, the barrier member 70 can enhance the effect of preventing the intrusion of liquids and gases from the outside. In other words, the semiconductor device A10 is preferable in terms of preventing deterioration of the functional assembly ASSY1 and preventing malfunctions.

[0105] In the semiconductor device A10, the sealing member 50 includes a covering portion 501 and a sealing portion 502. The covering portion 501 covers the functional assembly ASSY 1 including the semiconductor element 21. The sealing portion 502 is formed on the covering portion 501. The plastic strain range of the covering portion 501 is larger than the plastic strain range of the sealing portion 502. As can be seen from FIG. 9 , a larger plastic strain range increases the amount of strain that the material can sustain before fracture. In other words, a larger plastic strain range increases the likelihood of strain occurring, but also increases the resistance to fracture. Therefore, by making the plastic strain range of the covering portion 501 larger than the plastic strain range of the sealing portion 502, the fracture resistance of the covering portion 501 is increased compared to the fracture resistance of the sealing portion 502. This configuration can prevent the sealing member 50 from peeling off from the functional assembly ASSY 1 due to thermal load (thermal stress).

[0106] In the semiconductor device A10, the sealing portion 502 contains a silica filler in an insulating resin (e.g., epoxy resin), while the covering portion 501 does not contain a silica filler in an insulating resin (e.g., epoxy resin). Research by the present inventors has revealed that the plastic strain range varies depending on the content (content) of the silica filler in the insulating resin (e.g., epoxy resin). Specifically, the inventors have found that a high content (content) of the silica filler in the insulating resin (e.g., epoxy resin) results in a small plastic strain range, while a low content (content) of the silica filler in the insulating resin (e.g., epoxy resin) results in a large plastic strain range. Therefore, in the semiconductor device A10, as described above, the insulating resin (e.g., epoxy resin) in the covering portion 501 does not contain a silica filler, while the insulating resin (e.g., epoxy resin) in the sealing portion 502 contains a silica filler. As a result, in the semiconductor device A10, the plastic strain range of the covering portion 501 can be made larger than the plastic strain range of the sealing portion 502.

[0107] In the semiconductor device A10, the plastic strain range of the covering 501 is 5% or more when the internal temperature of the covering 501 is 100°C or higher. This configuration ensures adequate fracture resistance of the covering 501. For example, research by the present inventors has revealed that the stress at the yield point and the strain from the yield point to the fracture point vary depending on the internal temperature of the insulating resin (e.g., epoxy resin). Specifically, when the internal temperature of the insulating resin (e.g., epoxy resin) is low, the stress at the yield point is high and the strain from the yield point to the fracture point is small. On the other hand, when the internal temperature of the insulating resin (e.g., epoxy resin) is high, the stress at the yield point is low and the strain from the yield point to the fracture point is large. Therefore, when the internal temperature is lower than 100°C, the stress at the yield point is large, ensuring adequate stress resistance. This prevents the covering portion 501 from exceeding the yield point in response to a thermal load (thermal stress), thereby enabling the semiconductor device A10 to reduce breakage of the covering portion 501 and prevent peeling of the covering portion 501. On the other hand, if the internal temperature is 100°C or higher, the amount of strain from the yield point to the breaking point increases, ensuring an appropriate amount of strain. This allows the covering portion 501 to continue to strain even after exceeding the yield point in response to a thermal load (thermal stress), thereby preventing the covering portion 501 from exceeding the breaking point, thereby enabling the semiconductor device A10 to reduce breakage of the covering portion 501 and prevent peeling of the covering portion 501.

[0108] In the semiconductor device A10, the difference (absolute value) between the thermal expansion coefficient of the sealing portion 502 and the linear expansion coefficient of the main surface wiring layer 12 is smaller than the difference (absolute value) between the thermal expansion coefficient of the covering portion 501 and the thermal expansion coefficient of the main surface wiring layer 12. This configuration reduces warpage of the main surface wiring layer 12 (support member 10) due to temperature changes in the semiconductor device A10, making it possible to maintain the shape of the semiconductor device A10. In particular, the thermal expansion coefficient of the sealing portion 502 is, for example, 5 ppm or more and 20 ppm or less. This configuration is preferable in terms of reducing warpage due to temperature changes and maintaining the shape of the semiconductor device A10 when the main surface wiring layer 12 contains copper.

[0109] In the semiconductor device A10, the covering portion 501 covers the four corners (four corner portions 219b) of the conductive bonding layer 219 when viewed in the thickness direction z. The aforementioned thermal load is greatest at the four corners of the conductive bonding layer 219. Therefore, peeling of the sealing member 50 can occur from the four corners of the conductive bonding layer 219. Therefore, in the semiconductor device A10, covering at least the four corners of the conductive bonding layer 219 with the covering portion 501 can suppress peeling of the sealing member 50.

[0110] In the semiconductor device A10, the covering portion 501 covers the periphery 219a of the conductive bonding layer 219 when viewed in the thickness direction z. The aforementioned thermal load is greatest at the periphery 219a of the conductive bonding layer 219, next to the four corners of the conductive bonding layer 219. Therefore, peeling of the sealing member 50 may occur from the periphery 219a of the conductive bonding layer 219, next to the four corners of the conductive bonding layer 219. Therefore, in the semiconductor device A10, covering at least the periphery 219a of the conductive bonding layer 219 with the covering portion 501 can enhance the effect of suppressing peeling of the sealing member 50.

[0111] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0112] 13 and 14 show a semiconductor device A11 according to a modification of the first embodiment. The semiconductor device A11 differs from the semiconductor device A10 in the following respects. First, the functional assembly ASSY1 of the semiconductor device A11 includes a plurality of connecting members 401 instead of a plurality of conductive members 31. Second, the functional assembly ASSY1 of the semiconductor device A11 includes a plurality of connecting members 402 instead of a plurality of conductive members 32.

[0113] Each of the plurality of connection members 401, 402 is a bonding wire, similar to the plurality of connection members 41 to 44. Unlike this example, each of the plurality of connection members 401, 402 may be a bonding ribbon. Each of the plurality of connection members 401, 402 contains gold (Au). Each of the plurality of connection members 401, 402 may contain copper or aluminum.

[0114] Each of the multiple connection members 401 electrically connects one of the principal surface electrodes 212 of the multiple semiconductor elements 21 to the conductor portion 123 (pad portion 123a). Each of the multiple connection members 401 is individually connected to the principal surface electrodes 212 of the multiple semiconductor elements 21 and bonded to the conductor portion 123 (pad portion 123a). In the illustrated example, multiple connection members 401 are bonded to one semiconductor element 21, but a single connection member 401 may also be bonded. In the illustrated example, the wire diameter of each of the multiple connection members 401 is the same as the wire diameter of each of the multiple connection members 41 to 44, but they may be different. Note that, because a main current flows through the multiple connection members 401, the wire diameter of each of the multiple connection members 401 is preferably larger than the wire diameter of each of the multiple connection members 41 to 44. As shown in FIG. 14 , each of the multiple connection members 401 is covered with a coating portion 501.

[0115] Each of the multiple connection members 402 electrically connects one of the principal surface electrodes 222 of the multiple semiconductor elements 22 to the conductor portion 122 (pad portion 122a). Each of the multiple connection members 402 is individually connected to the principal surface electrodes 222 of the multiple semiconductor elements 22 and bonded to the conductor portion 122 (pad portion 122a). In the illustrated example, multiple connection members 402 are bonded to one semiconductor element 22, but a single connection member 402 may be bonded. In the illustrated example, the wire diameter of each of the multiple connection members 402 is the same as the wire diameter of each of the multiple connection members 41 to 44, but they may be different. Note that, because a main current flows through the multiple connection members 402, the wire diameter of each of the multiple connection members 402 is preferably larger than the wire diameter of each of the multiple connection members 41 to 44. As shown in FIG. 14 , each of the multiple connection members 402 is covered with a coating 501.

[0116] 14 , in the semiconductor device A11, the plurality of connection members 401, 402 are each covered with a covering portion 501. However, the portion of each connection member 401 that contacts the corresponding principal surface electrode 212 of the semiconductor element 21 and the portion that contacts the corresponding conductor portion 123 (pad portion 123 a) of the semiconductor element 21, and the portion of each connection member 402 that contacts the corresponding principal surface electrode 222 of the semiconductor element 22 and the portion that contacts the corresponding conductor portion 122 (pad portion 122 a) of the semiconductor element 22 are not covered with the covering portion 501.

[0117] In the semiconductor device A11, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A11 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A11 can suppress deterioration of the functional assembly ASSY1 and suppress malfunctions. In addition, the semiconductor device A11 has a common configuration with the semiconductor device A10, and thereby achieves the same effects as the semiconductor device A10.

[0118] As can be understood from this modified example, the semiconductor device of the present disclosure may be configured such that at least one connecting member 401, 402 is connected to the main surface electrode 212 of each semiconductor element 21 and the main surface electrode 222 of each semiconductor element 22, rather than a metal clip (each conductive member 31, 32).

[0119] 15 shows a semiconductor device A12 according to a second modification of the first embodiment. The semiconductor device A12 differs from the semiconductor device A10 in the following respect: the covering portion 501 of the semiconductor device A12 is not exposed to the outside.

[0120] In the semiconductor device A12, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A-80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A12 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A-80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A12 can suppress deterioration of the functional assembly ASSY1 and suppress operational malfunctions. In addition, the semiconductor device A12 has a configuration in common with the other semiconductor devices A10 and A11, and therefore achieves the same effects as the semiconductor devices A10 and A11.

[0121] 16 and 17 show a semiconductor device A13 according to a third modification of the first embodiment. The semiconductor device A13 differs from the semiconductor device A10 in the range in which the covering portion 501 is formed.

[0122] 17 , in the semiconductor device A13, the covering portion 501 is formed in a ring shape around each semiconductor element 21 in a plan view. Similarly, the covering portion 501 is formed in a ring shape around each semiconductor element 22 in a plan view. The covering portion 501 of the semiconductor device A13 overlaps the entire periphery of the periphery 219 a, 229 a in a plan view. In a plan view, the outer periphery of the covering portion 501 is located outward from the periphery 219 a, 229 a of the conductive bonding layers 219, 229. In this modification, since the periphery 219 a, 229 a is rectangular, the covering portion 501 is rectangular-shaped. Note that the shape of the covering portion 501 is not limited to a rectangular ring shape, and may be a circular ring, an elliptical ring, or a polygonal ring, as long as it overlaps the entire periphery of the periphery 219 a, 229 a in a plan view.

[0123] In the semiconductor device A13, the element main surface 21a of each semiconductor element 21 and the element main surface 22a of each semiconductor element 22 are not covered with the covering portion 501, and therefore, as shown in Fig. 16, the covering portion 501 does not cover each conductive member 32. Similarly, in the semiconductor device A13, the covering portion 501 does not cover each conductive member 31 and each connecting member 41 to 44. Furthermore, the covering portion 501 does not cover the upper surfaces of each power terminal 14 to 16.

[0124] In the semiconductor device A13, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A13 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A13 can suppress deterioration of the functional assembly ASSY1 and suppress operational malfunctions. In addition, the semiconductor device A13 has a configuration in common with the other semiconductor devices A10 to A12, and therefore achieves the same effects as the semiconductor devices A10 to A12.

[0125] 18 shows a semiconductor device A14 according to a fourth modification of the first embodiment. The semiconductor device A14 differs from the semiconductor device A10 in the following respect: the sealing member 50 of the semiconductor device A14 does not include a covering portion 501.

[0126] In this modification, the sealing member 50 does not include the covering portion 501, and therefore the sealing member 50 is configured by the sealing portion 502. Therefore, the functional assembly ASSY1 contacts the sealing portion 502.

[0127] In the semiconductor device A14, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A14 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A14 can suppress deterioration of the functional assembly ASSY1 and suppress malfunctions. In addition, the semiconductor device A14 has a configuration in common with the other semiconductor devices A10 to A13, and therefore achieves the same effects as the semiconductor devices A10 to A13.

[0128] As can be understood from this modification, in the semiconductor device of the present disclosure, the sealing member 50 is not limited to a configuration including both the covering portion 501 and the sealing portion 502, but also includes a case where it is composed of the sealing portion 502 (i.e., epoxy resin).

[0129] 19 shows a semiconductor device A15 according to a fifth modification of the first embodiment. The semiconductor device A15 differs from the semiconductor device A10 in the following respect: the barrier member 70 of the semiconductor device A15 includes a protective portion 72.

[0130] The protective portion 72 is formed across the resin back surface 52 and the lower surface of the back surface wiring layer 13. The protective portion 72 covers the entire resin back surface 52 and the entire lower surface of the back surface wiring layer 13. As a result, the boundary portion between the resin back surface 52 and the back surface wiring layer 13 (the exposed end portion 80 in FIG. 19 ) is covered with the barrier member 70 (protective portion 72).

[0131] In the semiconductor device A15, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A15 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A15 can suppress deterioration of the functional assembly ASSY1 and suppress operational malfunctions. In addition, the semiconductor device A15 has a configuration in common with the other semiconductor devices A10 to A14, and thus achieves the same effects as the semiconductor devices A10 to A14.

[0132] In the semiconductor device A15, the barrier member 70 includes a protective portion 72 in addition to the multiple protective portions 71. Therefore, compared to the semiconductor device A10, the semiconductor device A15 can further prevent the intrusion of liquid (e.g., water) or gas from the outside by the barrier member 70.

[0133] 20 and 21 show a semiconductor device A20 according to a second embodiment. The semiconductor device A20 differs from the semiconductor device A10 in the following respects: The dimension in the thickness direction z of the sealing member 50 of the semiconductor device A20 is smaller than the dimension in the thickness direction z of the sealing member 50 of the semiconductor device A10.

[0134] In the semiconductor device A20, as shown in FIGS. 20 and 21 , the power terminals 14-16 are not bent. Therefore, as described above, the dimension of the sealing member 50 in the thickness direction z is smaller than the dimension of the sealing member 50 in the thickness direction z of the semiconductor device A10. That is, in the semiconductor device A20, the distance from the resin main surface 51 to the functional assembly ASSY1 is shorter than in the semiconductor device A10. Therefore, the barrier member 70 of the semiconductor device A20 includes a protective portion 73 that covers the resin main surface 51. The protective portion 73 covers, for example, a portion of the sealing member 50 where the linear distance d31 from the surface exposed to the outside (e.g., the resin main surface 51 and the multiple resin side surfaces 531-534) to the functional assembly ASSY1 is 150 μm or less. For example, in the semiconductor device A20, the linear distance d31 from each conductive member 31 to the resin main surface 51 in the thickness direction z (see FIG. 20 ) is 150 μm or less. Furthermore, the linear distance d32 (see FIG. 21) from each conductive member 32 to the resin main surface 51 in the thickness direction z is 150 μm or less.

[0135] Furthermore, in the semiconductor device A20, as can be seen from Figures 20 and 21, each protective portion 71 covers the corresponding resin side surface 531 to 534 from the edge on the z1 side in the thickness direction z to the edge on the z2 side in the thickness direction z.

[0136] The functions and effects of the semiconductor device A20 are as follows.

[0137] In the semiconductor device A20, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A-80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A20 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A-80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A20 can suppress deterioration of the functional assembly ASSY1 and suppress malfunctions. In addition, the semiconductor device A20 has a common configuration with the semiconductor device A10, and thereby achieves the same effects as the semiconductor device A10.

[0138] In the semiconductor device A20, the barrier member 70 includes a protective portion 73. The protective portion 73 covers a portion of the sealing member 50 where the linear distance d31 from the surface exposed to the outside (e.g., the resin main surface 51 and the plurality of resin side surfaces 531-534) to the functional assembly ASSY1 is 150 μm or less. The intrusion of liquid (e.g., water) or gas from the outside can proceed not only through the interface between the functional assembly ASSY1 and the sealing member 50, but also through the sealing member 50 that has deteriorated due to thermal load. Therefore, by covering the portion of the sealing member 50 where the linear distance d31 from the surface exposed to the outside (e.g., the resin main surface 51 and the plurality of resin side surfaces 531-534) to the functional assembly ASSY1 is 150 μm or less with the barrier member 70 (protective portion 73), the intrusion of liquid (e.g., water) or gas from the outside proceeding from the surface of the sealing member 50, rather than from the aforementioned interface, can be suppressed.

[0139] 22 to 24 show a semiconductor device A21 according to a modification of the second embodiment. The semiconductor device A21 differs from the semiconductor device A20 in the range in which the protective portion 73 is formed.

[0140] In the semiconductor device A21, the protective portion 73 covers a portion of the resin main surface 51, as shown in FIGS. 22 to 24 . The protective portion 73 of the semiconductor device A21 covers the upper portions of the conductive members 31 and 32 of the resin main surface 51. In the example shown, the protective portion 73 collectively covers the upper portions of the conductive members 31 and 32, but may cover them individually. In the semiconductor device A21, the linear distance from the main surface wiring layer 12 to the resin main surface 51 in the thickness direction z is greater than 150 μm. Therefore, it is not necessary to cover the entire resin main surface 51 with the protective portion 73 (barrier member 70).

[0141] In the semiconductor device A21, similar to the semiconductor device A20, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A20, the semiconductor device A21 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A20, the semiconductor device A21 can suppress deterioration of the functional assembly ASSY1 and suppress malfunctions. In addition, the semiconductor device A21 has a common configuration with the semiconductor device A20, and thereby achieves the same effects as the semiconductor device A20.

[0142] In the semiconductor device A21, the protective portion 73 covers a part of the resin main surface 51. With this configuration, the area where the barrier member 70 is formed can be reduced.

[0143] The semiconductor devices A20 and A21 may be configured to have a plurality of connecting members 401 and 402 instead of a plurality of conductive members 31 and 32, similar to the semiconductor device A11; may be configured to have a different formation range of the covering portion 501, similar to the semiconductor devices A12 and A13; may be configured to have the sealing member 50 not have the covering portion 501, similar to the semiconductor device A14; or may be configured to have the barrier member 70 include a protective portion 72, similar to the semiconductor device A15.

[0144] 25 and 26 show a semiconductor device A30 according to a third embodiment. The semiconductor device A30 differs from the semiconductor device A10 in the following respect: the barrier member 70 of the semiconductor device A30 is conductive.

[0145] In the semiconductor device A10 and the like, the barrier member 70 was insulating, so the multiple protective portions 71 partially covered the exposed portion 141 of the power terminal 14, the exposed portion 151 of the power terminal 15, the exposed portion 161 of the power terminal 16, and the portions of the multiple signal terminals 17 exposed from the sealing member 50. On the other hand, in the semiconductor device A30, the barrier member 70 is conductive, so the multiple protective portions 71 may cover substantially the entire surfaces of the exposed portion 141 of the power terminal 14, the exposed portion 151 of the power terminal 15, the exposed portion 161 of the power terminal 16, and the portions of the multiple signal terminals 17 exposed from the sealing member 50. Note that the tip surfaces of the power terminals 14 to 16 and the signal terminals 17 may not be covered by the corresponding protective portion 71 (barrier member 70) due to cutting out from the lead frame during manufacturing. In addition, in the semiconductor device A30, the protection portions 71 for the signal terminals 17 are spaced apart from each other so that the signal terminals 17 are not short-circuited to each other.

[0146] The functions and effects of the semiconductor device A30 are as follows.

[0147] In the semiconductor device A30, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A-80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A30 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A-80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A30 can suppress deterioration of the functional assembly ASSY1 and suppress operational malfunctions. In addition, the semiconductor device A30 has a common configuration with the other semiconductor devices A10 and A20, and therefore achieves the same effects as the semiconductor devices A10 and A20.

[0148] As can be understood from this embodiment, in the semiconductor device of the present disclosure, the barrier member 70 may be conductive instead of insulating.

[0149] 27 shows a semiconductor device A31 according to a modification of the third embodiment. The semiconductor device A31 differs from the semiconductor device A30 in the following respect: a plurality of recesses 541, 543, and 544 are formed in the sealing member 50 of the semiconductor device A31.

[0150] 27 , the recess 541 is recessed from the resin side surface 531 in the first direction x. 541 is located between the power terminal 14 and the power terminal 15 in the second direction y. The plurality of recesses 543 are recessed from the resin side surface 533 in the second direction y. The plurality of recesses 543 are located individually between the plurality of signal terminals 17 protruding from the resin side surface 533 in the first direction x. The plurality of recesses 544 are recessed from the resin side surface 534 in the second direction y. The plurality of recesses 544 are located individually between the plurality of signal terminals 17 protruding from the resin side surface 534 in the first direction x.

[0151] In the semiconductor device A31, similar to the semiconductor device A30, the barrier member 70 covers at least a portion of each of the exposed ends 80A to 80D at the interface between the functional assembly ASSY1 and the sealing member 50. Therefore, similar to the semiconductor device A30, the semiconductor device A31 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A to 80D by the barrier member 70. In other words, similar to the semiconductor device A30, the semiconductor device A31 can suppress deterioration of the functional assembly ASSY1 and suppress malfunctions. In addition, the semiconductor device A31 has a common configuration with the semiconductor device A30, and thereby achieves the same effects as the semiconductor device A30.

[0152] In the semiconductor device A31, the barrier member 70 is conductive. In this configuration, a short circuit may occur through the barrier member 70. Therefore, the recess 541 can prevent an unintended short circuit between the power terminal 14 and the power terminal 15 through the barrier member 70. Similarly, the multiple recesses 543 can prevent an unintended short circuit through the barrier member 70 between the multiple signal terminals 17 (171, 173, 178) protruding from the resin side surface 533. Similarly, the multiple recesses 544 can prevent an unintended short circuit through the barrier member 70 between the multiple signal terminals 17 (172, 174, 178) protruding from the resin side surface 534.

[0153] 28 to 39 show a semiconductor device A40 according to a fourth embodiment. The semiconductor device A40 differs from the semiconductor device A10 in its package structure. The semiconductor device A40 includes a functional assembly ASSY4 instead of the functional assembly ASSY1. Specifically, the semiconductor device A40 includes a functional assembly ASSY4, a sealing member 50, and a barrier member 70. The functional assembly ASSY4 includes a support member 10, a power terminal 14, two power terminals 15, two power terminals 16, a plurality of signal terminals 171 to 177, a plurality of semiconductor elements 21, a plurality of semiconductor elements 22, two thermistors 23 and 24, two conductive members 31 and 32, a plurality of connecting members 41 to 46, and two signal boards 601 and 602. In the following description, the plurality of signal terminals 171 to 177 will be referred to as a plurality of signal terminals 17 unless otherwise specified.

[0154] Similar to the semiconductor device A10, the semiconductor device A40 converts a DC power supply voltage applied to the power terminal 14 and two power terminals 15 into an AC voltage using a plurality of semiconductor elements 21 and a plurality of semiconductor elements 22. The converted AC voltage is input from two power terminals 16 to a power supply target such as a motor.

[0155] In the semiconductor device A40, each of the multiple semiconductor elements 21 has two main surface electrodes 214 in addition to a back surface electrode 211 and multiple main surface electrodes 212 and 213. The two main surface electrodes 214 are arranged on both sides of the main surface electrode 213 in the second direction y, with the main surface electrode 213 sandwiched therebetween. Unlike the illustrated example, each semiconductor element 21 may include only one of the two main surface electrodes 214, or may include neither of the two main surface electrodes 214. In an example in which each semiconductor element 21 is a MOSFET, the main surface electrode 214 is a source sense electrode.

[0156] In the semiconductor device A40, each of the multiple semiconductor elements 22 has two main surface electrodes 224 in addition to a back surface electrode 221 and multiple main surface electrodes 222, 223. The two main surface electrodes 224 are arranged on both sides of the main surface electrode 223 in the second direction y, with the main surface electrode 223 sandwiched therebetween. Unlike the illustrated example, each semiconductor element 22 may include only one of the two main surface electrodes 224, or may not include either of the two main surface electrodes 224. In an example in which each semiconductor element 22 is a MOSFET, the main surface electrode 224 is a source sense electrode.

[0157] In the semiconductor device A40, the main surface wiring layer 12 of the support member 10 includes two conductor portions 121, 122. The two conductor portions 121, 122 are spaced apart in the first direction x. The two conductor portions 121, 122 are aligned in the first direction x. The dimensions of the two conductor portions 121, 122 in the thickness direction z are the same.

[0158] The conductor portion 121 is located on the x1 side in the first direction x with respect to the conductor portion 122. The conductor portion 121 is located closer to the power terminal 14 and the two power terminals 15 than the conductor portion 122 in the first direction x. The conductor portion 121 has, for example, a rectangular shape in a plan view, but the shape of the conductor portion 121 in a plan view is not limited in any way. A plurality of semiconductor elements 21 and a signal substrate 601 are bonded to the conductor portion 121. The plurality of semiconductor elements 21 are arranged on the conductor portion 121 along the second direction y.

[0159] The conductor portion 122 is located on the x2 side in the first direction x with respect to the conductor portion 121. The conductor portion 122 is located closer to the two power terminals 16 than the conductor portion 121 in the first direction x. The conductor portion 122 has, for example, a rectangular shape in a plan view, but the shape of the conductor portion 122 in a plan view is not limited in any way. A plurality of semiconductor elements 22 and a signal board 602 are bonded to the conductor portion 122. The plurality of semiconductor elements 22 are arranged on the conductor portion 122 along the second direction y.

[0160] The power terminal 14 is joined to the conductor portion 121. This joining is not limited in any way and may be done using a conductive joining material (e.g., solder or sintered metal, etc.) not shown, laser welding, or crimping. The power terminal 14 is supported by the conductor portion 121. The power terminal 14 is electrically connected to the back electrodes 211 (drain electrodes of the upper arm circuits) of the multiple semiconductor elements 21 via the conductor portion 121. The power terminal 14 is a P terminal (positive terminal) to which a DC power supply voltage to be converted into power is applied. As shown in FIG. 31 and other figures, the power terminal 14 is located on the opposite side of the conductor portion 122 in the first direction x, with the conductor portion 121 sandwiched therebetween. The power terminal 14 is located between the two power terminals 15 in the first direction x. The power terminal 14 extends from the conductor portion 121 toward the x1 side in the first direction x and protrudes from the sealing member 50 toward the x1 side in the first direction x. In the illustrated example, the power terminal 14 is flat, but may include a bent portion.

[0161] 30 and other figures, the power terminal 14 includes an exposed portion 141 and a covered portion 142. The exposed portion 141 is a portion of the power terminal 14 that is exposed from the sealing member 50. In the power terminal 14, the exposed portion 141 is used as the P terminal described above. The covered portion 142 is a portion of the power terminal 14 that is covered by the sealing member 50. In the power terminal 14, the covered portion 142 is joined to the conductor portion 121.

[0162] As shown in Figures 30 and 34, a conductive member 32 is joined to the two power terminals 15. The two power terminals 15 are electrically connected to main surface electrodes 222 (source electrodes of the lower arm circuits) of the multiple semiconductor elements 22 via the conductive member 32. The two power terminals 15 are N terminals (negative terminals) to which a DC power supply voltage to be converted is applied. The two power terminals 15 are spaced apart from each other in the first direction x. The power terminal 14 is located between the two power terminals 15. As shown in Figure 30, the two power terminals 15 are located on the same side of the support member 10 as the power terminal 14 in the second direction y. The two power terminals 15 are each spaced apart from the main surface wiring layer 12. The two power terminals 15 each extend in the first direction x and protrude from the sealing member 50 on the x1 side in the first direction x. In the illustrated example, each power terminal 15 is flat, but may include a bent portion.

[0163] As shown in Figure 30 and other figures, each of the two power terminals 15 includes an exposed portion 151 and a covered portion 152. The exposed portion 151 is a portion of each power terminal 15 that is exposed from the sealing member 50. In each power terminal 15, the exposed portion 151 is used as the N terminal described above. The covered portion 152 is a portion of each power terminal 15 that is covered by the sealing member 50. A conductive member 32 is joined to the covered portion 152 of each power terminal 15.

[0164] The two power terminals 16 are each joined to the conductor portion 122. This joining is not limited in any way and may be done using a conductive joining material (e.g., solder or sintered metal, etc.) not shown, laser welding, or crimping. The two power terminals 16 are each supported by the conductor portion 122. Each of the two power terminals 16 is electrically connected to the back electrodes 221 (drain electrodes of the lower arm circuits) of the multiple semiconductor elements 22 via the conductor portion 122, and is also electrically connected to the main surface electrodes 212 (source electrodes of the upper arm circuits) of the multiple semiconductor elements 21 via the conductor portion 122 and the conductive member 31. AC power converted by the multiple semiconductor elements 21 and the multiple semiconductor elements 22 is output from the two power terminals 16. In other words, the two power terminals 16 are each an output terminal for the AC power. The two power terminals 16 are spaced apart from each other in the second direction y. 30 and the like, the two power terminals 16 are located on opposite sides of the conductor portion 122 from the conductor portion 121 in the first direction x. Each of the two power terminals 16 protrudes from the conductor portion 122 toward the x2 side in the first direction x. In the illustrated example, each power terminal 16 is flat, but may include a bent portion.

[0165] 30 and other figures, each of the two power terminals 16 includes an exposed portion 161 and a covered portion 162. The exposed portion 161 is a portion of each power terminal 16 that is exposed from the sealing member 50. In each power terminal 16, the exposed portion 161 is used as the output terminal described above. The covered portion 162 is a portion of each power terminal 16 that is covered by the sealing member 50. The covered portion 162 of each power terminal 16 is joined to the conductor portion 122.

[0166] The pair of signal boards 601, 602 constitute part of the conductive paths between the multiple signal terminals 17 and the multiple semiconductor elements 21 and the multiple semiconductor elements 22. As shown in FIGS. 31 and 37 , the signal board 601 is located between the multiple semiconductor elements 21 and the power terminal 14 and two power terminals 15 in the first direction x. The signal board 601 is bonded to the conductor portion 121 as shown in FIG. 37 . As shown in FIGS. 31 and 37 , the signal board 602 is located between the multiple semiconductor elements 22 and two power terminals 16 in the first direction x. The signal board 602 is bonded to the conductor portion 122 as shown in FIG. 37 . Each of the pair of signal boards 601, 602 is, for example, a DCB board or an AMB board. Unlike this example, each of the pair of signal boards 601, 602 may be a printed circuit board.

[0167] Each of the pair of signal substrates 601, 602 has an insulating layer 61, a wiring layer 62, a metal layer 63, and a plurality of sleeves 64. Each of the pair of signal substrates 601, 602 is covered with a sealing member 50 except for a portion of each of the plurality of sleeves 64. Unless otherwise specified, the insulating layer 61, the wiring layer 62, the metal layer 63, and the plurality of sleeves 64 described below are common to each of the pair of signal substrates 601, 602.

[0168] The insulating layer 61 is interposed between the wiring layer 62 and the metal layer 63 in the thickness direction z. The insulating layer 61 may be made of, for example, ceramics. Alternatively, the insulating layer 61 may be made of an insulating resin sheet.

[0169] As shown in Fig. 37, the wiring layer 62 is located above the insulating layer 61 in the thickness direction z. The composition of the wiring layer 62 is not limited in any way, but may include copper. As shown in Fig. 31, the wiring layer 62 includes a plurality of wiring portions 621 to 624. The plurality of wiring portions 621 to 624 are spaced apart from one another. The planar shape, arrangement, size, etc. of each of the wiring portions 621 to 624 are not limited to the example shown in the figure.

[0170] 37 , the metal layer 63 is located on the opposite side of the wiring layer 62 in the thickness direction z, with the insulating layer 61 sandwiched therebetween. The composition of the metal layer 63 is not limited in any way, but may include copper. The metal layer 63 of the signal substrate 601 is bonded to the conductor portion 121 by an adhesive layer (not shown). The metal layer 63 of the signal substrate 602 is bonded to the conductor portion 122 by an adhesive layer (not shown). These adhesive layers are made of a material that may or may not be conductive. These adhesive layers may be, for example, solder.

[0171] As shown in FIG. 37 , each of the multiple sleeves 64 is bonded to one of the multiple wiring layers 62 by a conductive bonding layer (e.g., solder) not shown. The multiple sleeves 64 are made of a conductive material such as metal. Each of the multiple sleeves 64 has a cylindrical shape extending along the thickness direction z. One end of each of the multiple sleeves 64 in the thickness direction z (an edge on the z2 side in the thickness direction z) is conductively bonded to one of the multiple wiring layers 62. As shown in FIG. 37 , the other end of each of the multiple sleeves 64 in the thickness direction z (an edge on the z1 side in the thickness direction z) is exposed from the sealing member 50.

[0172] As shown in FIG. 31 , the thermistor 23 straddles and is conductively joined to two wiring portions 623 of the signal substrate 601. As shown in FIG. 31 , the thermistor 24 straddles and is conductively joined to two wiring portions 623 of the signal substrate 602. Each of the two thermistors 23, 24 is, for example, an NTC (Negative Temperature Coefficient) thermistor. An NTC thermistor has the characteristic of gradually decreasing resistance as temperature rises. The two thermistors 23, 24 are used as temperature detection sensors for the semiconductor device A40.

[0173] Each of the signal terminals 17 (signal terminals 171 to 174 to 177) is formed by a metal pin and extends in the thickness direction z, as shown in FIGS. 28 and 37 . The signal terminals 17 protrude from the sealing member 50 (resin main surface 51, described below). The signal terminals 17 (signal terminals 171 to 177) are individually press-fitted into the sleeves 64 of the pair of signal boards 601 and 602. As a result, each of the signal terminals 17 is supported by one of the sleeves 64 and is electrically connected to one of the wiring layers 62 of the pair of signal boards 601 and 602. Each of the signal terminals 171 to 175 is electrically connected to one of the semiconductor elements 21 and the semiconductor elements 22. Each of the signal terminals 176 and 177 is not electrically connected to either of the semiconductor elements 21 or the semiconductor elements 22 (is non-conductive). Two signal terminals 176 are electrically connected to thermistor 23 , and two signal terminals 177 are electrically connected to thermistor 24 .

[0174] 31 , the signal terminal 171 is press-fitted into the sleeve 64 joined to the wiring portion 621 of the signal substrate 601. As a result, the signal terminal 171 is supported by the sleeve 64 and is electrically connected to the wiring portion 621 of the signal substrate 601. The signal terminal 171 is electrically connected to each of the main surface electrodes 213 of the multiple semiconductor elements 21. A drive signal for driving each semiconductor element 21 is input to the signal terminal 171 (a gate voltage is applied).

[0175] 31 , the signal terminal 172 is press-fitted into the sleeve 64 joined to the wiring portion 621 of the signal board 602. As a result, the signal terminal 172 is supported by the sleeve 64 and is electrically connected to the wiring portion 621 of the signal board 602. The signal terminal 172 is electrically connected to each of the main surface electrodes 223 of the multiple semiconductor elements 22. A drive signal for driving each semiconductor element 22 is input to the signal terminal 172 (a gate voltage is applied).

[0176] As shown in Fig. 31 and other figures, the signal terminal 173 is located next to the signal terminal 171 in the second direction y. As can be seen from Fig. 31 , the signal terminal 173 is press-fitted into a sleeve 64 joined to the wiring portion 622 of the signal substrate 601. As a result, the signal terminal 173 is supported by the sleeve 64 and is electrically connected to the wiring portion 622 of the signal substrate 601. The signal terminal 173 is electrically connected to the main surface electrodes 214 of the multiple semiconductor elements 21. A voltage corresponding to the maximum current among the currents flowing through the main surface electrodes 214 of the multiple semiconductor elements 21 is applied to the signal terminal 173.

[0177] As shown in Fig. 31 and other figures, the signal terminal 174 is located next to the signal terminal 172 in the second direction y. As can be seen from Fig. 31 , the signal terminal 174 is press-fitted into the sleeve 64 joined to the wiring portion 622 of the signal board 602. As a result, the signal terminal 174 is supported by the sleeve 64 and is electrically connected to the wiring portion 622 of the signal board 602. The signal terminal 174 is electrically connected to the main surface electrodes 224 of the multiple semiconductor elements 22. A voltage corresponding to the maximum current among the currents flowing through the main surface electrodes 224 of the multiple semiconductor elements 22 is applied to the signal terminal 174.

[0178] As shown in Fig. 31 and other figures, the signal terminal 175 is located on the opposite side of the signal terminal 171 in the second direction y, with the signal terminal 173 sandwiched therebetween. As can be seen from Fig. 31 , the signal terminal 175 is press-fitted into a sleeve 64 joined to the wiring portion 625 of the signal substrate 601. As a result, the signal terminal 175 is supported by the sleeve 64 and is electrically connected to the wiring portion 625 of the signal substrate 601. The signal terminal 175 is electrically connected to the back electrodes 211 of the multiple semiconductor elements 21. A voltage corresponding to the maximum current among the currents flowing through the back electrodes 211 of the multiple semiconductor elements 21 is applied to the signal terminal 175.

[0179] As shown in FIG. 31 , the pair of signal terminals 176 are located on the opposite side of the signal terminal 173 in the second direction y, with the signal terminal 171 sandwiched therebetween. The pair of signal terminals 176 are adjacent to each other in the second direction y. As can be seen from FIG. 31 , the pair of signal terminals 176 are individually press-fitted into two sleeves 64 joined to two wiring portions 623 of the signal board 601, respectively. As a result, the pair of signal terminals 176 are individually supported by the two sleeves 64 and are individually conducted to the two wiring portions 623 of the signal board 601. The pair of signal terminals 176 are conducted to the thermistor 23.

[0180] As shown in Fig. 31 , the pair of signal terminals 177 are located on the opposite side of the signal terminal 174 in the second direction y, with the signal terminal 172 sandwiched therebetween, and the pair of signal terminals 177 are adjacent to each other in the second direction y. As can be seen from Fig. 31 , the pair of signal terminals 177 are press-fitted individually into two sleeves 64 joined to two wiring portions 623 of the signal board 602, respectively. As a result, the pair of signal terminals 177 are individually supported by the two sleeves 64 and are individually conducted to the two wiring portions 623 of the signal board 602. The pair of signal terminals 177 are conducted to the thermistor 24.

[0181] Each of the plurality of connection members 41 to 46 electrically connects parts spaced apart from one another. Each of the plurality of connection members 41 to 46 is, for example, a bonding wire. Unlike this example, each of the plurality of connection members 41 to 46 may be a metal plate material. Each of the plurality of connection members 41 to 46 contains gold (Au). Each of the plurality of connection members 41 to 46 may contain copper or aluminum. Note that the plurality of connection members 41 to 46 are omitted from Figures 30 and 34 to 37.

[0182] 31 , each of the plurality of connection members 41 is conductively joined to the corresponding main surface electrode 213 of the semiconductor element 21 and the wiring portion 624 of the signal substrate 601. Each of the plurality of connection members 45 is conductively joined to the wiring portion 624 of the signal substrate 601 and the wiring portion 621 of the signal substrate 601. As a result, the signal terminal 171 is conductively joined to each of the main surface electrodes 213 of the plurality of semiconductor elements 21.

[0183] 31 , each of the plurality of connection members 42 is conductively joined to the corresponding main surface electrode 223 of the semiconductor element 22 and the wiring portion 624 of the signal substrate 602. Each of the plurality of connection members 46 is conductively joined to the wiring portion 624 of the signal substrate 602 and the wiring portion 621 of the signal substrate 602. As a result, the signal terminal 172 is conductively joined to each of the main surface electrodes 223 of the plurality of semiconductor elements 22.

[0184] 31 , each of the plurality of connection members 43 is electrically connected to the corresponding main surface electrode 214 of the semiconductor element 21 and the wiring portion 622 of the signal substrate 601. This allows the signal terminal 173 to be electrically connected to each of the main surface electrodes 214 of the plurality of semiconductor elements 21. Note that when each semiconductor element 21 does not include two main surface electrodes 214, each of the plurality of connection members 43 is connected to the main surface electrode 212 of the corresponding semiconductor element 21.

[0185] 31 , each of the plurality of connection members 44 is conductively joined to the corresponding main surface electrode 224 of the semiconductor element 22 and the wiring portion 622 of the signal substrate 602. This allows the signal terminal 174 to be conductively connected to each of the main surface electrodes 224 of the plurality of semiconductor elements 22. Note that when each semiconductor element 22 does not include two main surface electrodes 224, each of the plurality of connection members 44 is joined to the corresponding main surface electrode 222 of the semiconductor element 22.

[0186] 31 , the connection member 46 is electrically connected to the wiring portion 625 of the signal substrate 601 and the conductor portion 121. As a result, the signal terminal 175 is electrically connected to the back surface electrodes 211 of the plurality of semiconductor elements 21 via the conductor portion 121.

[0187] As shown in FIG. 31 and other figures, the conductive member 31 is joined to each of the principal surface electrodes 212 of the semiconductor elements 21 and the conductor portion 122 of the support member 10. The principal surface electrodes 212 of the semiconductor elements 21 are electrically connected to the conductor portion 122 via the conductive member 31. The conductive member 31 is, for example, a metal plate (metal clip). The composition of the conductive member 31 may include, for example, copper, but is not limited to this. As shown in FIG. 31 and other figures, the conductive member 31 has a main body portion 311 and multiple joint portions 312, 313.

[0188] The main body portion 311 forms a main part of the conductive member 31. As shown in FIG. 4 , the main body portion 311 extends in the first direction x. As shown in FIG. 31 and other figures, the main body portion 311 straddles the two conductor portions 121, 122. As shown in FIG. 31 and other figures, a plurality of through holes 311 a are formed in the main body portion 311. The plurality of through holes 311 a penetrate the main body portion 311 in the thickness direction z. The plurality of through holes 311 a overlap between the two conductor portions 121, 122 in a plan view. This allows the sealing member 50 to flow smoothly downward in the thickness direction z of the main body portion 311 when forming the sealing member 50.

[0189] As shown in FIG. 31 and other figures, the multiple bonding portions 312 are individually bonded to the principal surface electrodes 212 of the multiple semiconductor elements 21. Each of the multiple bonding portions 312 faces one of the principal surface electrodes 212 of the multiple semiconductor elements 21. In a plan view, each bonding portion 312 extends from the main body portion 311 toward the y2 side in the second direction y. In the illustrated example, the multiple bonding portions 312 are bifurcated from the main body portion 311, but they do not have to be bifurcated. The tip of each bonding portion 312 (the end opposite to the side connected to the main body portion 311) is located below the main body portion 311 in the thickness direction z (the z2 side in the thickness direction z). The base end of each bonding portion 312 (the end connected to the main body portion 311) is bent in the thickness direction z so as to connect the tip of each bonding portion 312, which is located at a different position in the thickness direction z, to the main body portion 311.

[0190] As shown in FIG. 31 and other figures, the multiple joints 313 are joined to the conductor portion 122. The multiple joints 313 face the conductor portion 122. In a plan view, each joint 313 extends from the main body portion 311 to the y1 side in the second direction y. The tip of each joint 313 (the end opposite to the side connected to the main body portion 311) is located below the main body portion 311 in the thickness direction z (on the z2 side in the thickness direction z). The base end of each joint 313 (the end connected to the main body portion 311) is bent in the thickness direction z so as to connect the tip of each joint 313, which is located at a different position in the thickness direction z, to the main body portion 311.

[0191] In a configuration different from the illustrated example, the semiconductor device A40 (functional assembly ASSY4), like the semiconductor device A10 (functional assembly ASSY1), may have a plurality of conductive members 31, each of which is band-shaped in a planar view, and the plurality of conductive members 31 may electrically connect the main surface electrodes 212 of each semiconductor element 21 to the conductor portion 122.

[0192] As shown in Fig. 35, the functional assembly ASSY4 further includes a conductive bonding layer 33. The conductive bonding layer 33 is interposed between the main surface electrodes 212 of the plurality of semiconductor elements 21 and the plurality of bonding portions 312. The conductive bonding layer 33 conductively bonds the main surface electrodes 212 of the plurality of semiconductor elements 21 to the plurality of bonding portions 312. The conductive bonding layer 33 is, for example, solder. Alternatively, the conductive bonding layer 33 may include a sintered body of metal particles.

[0193] As shown in Fig. 34, the functional assembly ASSY4 further includes a conductive bonding layer 34. The conductive bonding layer 34 is interposed between the conductor portion 122 and the joint portion 313. The conductive bonding layer 34 conductively bonds the conductor portion 122 and the joint portion 313. The conductive bonding layer 34 is, for example, solder. Alternatively, the conductive bonding layer 34 may include a sintered body of metal particles.

[0194] As shown in FIG. 30 and other figures, the conductive member 32 is conductively bonded to the main surface electrodes 222 (source electrodes) of the plurality of semiconductor elements 22 and the two power terminals 15. As a result, the main surface electrodes 222 of the plurality of semiconductor elements 22 are electrically connected to the two power terminals 15 via the conductive member 32. The conductive member 32 is, for example, a metal plate (metal clip). The composition of the conductive member 32 may include, for example, copper, but is not limited to this. As shown in FIG. 30 and other figures, the conductive member 32 includes two main body portions 321, a plurality of joint portions 322, a plurality of joint portions 324, a plurality of intermediate portions 326, and a cross beam portion 327.

[0195] As shown in FIG. 30 , the two main bodies 321 are spaced apart from each other in the second direction y. Each of the two main bodies 321 extends in the first direction x. As shown in FIGS. 34 and 39 , each of the two main bodies 321 is disposed parallel to the top surface of the main surface wiring layer 12. In the thickness direction z, the two main bodies 321 are farther from the main surface wiring layer 12 (the two conductors 121, 122) than the main body 311 of the conductive member 31. Each of the two main bodies 321 intersects the conductor 121 in a plan view. That is, each of the two main bodies 321 extends from the edge of the conductor 121 on the x1 side in the first direction x to the edge of the conductor 121 on the x2 side in the first direction x in a plan view.

[0196] 30 , the multiple intermediate portions 326 are spaced apart from each other in the second direction y and are located between the two main body portions 321 in the second direction y. The multiple intermediate portions 326 extend in the first direction x. The dimension of each of the multiple intermediate portions 326 in the first direction x is smaller than the dimension of each of the two main body portions 321 in the first direction x.

[0197] 30 , the multiple bonding portions 322 are individually bonded to the principal surface electrodes 222 of the multiple semiconductor elements 22. Each of the multiple bonding portions 322 faces one of the principal surface electrodes 222 of the multiple semiconductor elements 22. In a plan view, the multiple bonding portions 322 extend in the second direction y from multiple intermediate portions 326. The tip of each bonding portion 322 (the end opposite to the side connected to the intermediate portion 326) is located below the intermediate portion 326 in the thickness direction z (on the z2 side in the thickness direction z). The base end of each bonding portion 322 (the end connected to the intermediate portion 326) is bent in the thickness direction z so as to connect the tip of each bonding portion 322 and each intermediate portion 326, which are located at different positions in the thickness direction z.

[0198] 30 and 34 , the pair of joints 324 are individually joined to the two power terminals 15. The joining is, for example, by soldering. Alternatively, joining may be by a joining material containing a sintered body of metal particles. Each of the pair of joints 324 faces a corresponding one of the two power terminals 15.

[0199] As shown in Fig. 30 , the cross beam portion 327 is located between the two main body portions 321 in the second direction y. The cross beam portion 327 extends in the second direction y from each of the two main body portions 321. As can be seen from Fig. 30 , the cross beam portion 327 overlaps with the multiple joint portions 312 of the conductive member 31 in a plan view. The multiple intermediate portions 326 each extend from the cross beam portion 327 toward the x2 side in the first direction x.

[0200] As shown in Fig. 36, the functional assembly ASSY4 further includes a plurality of conductive bonding layers 35. The plurality of conductive bonding layers 35 are individually interposed between the main surface electrodes 222 of the plurality of semiconductor elements 22 and the plurality of bonding portions 322. The plurality of conductive bonding layers 35 conductively bond the main surface electrodes 222 of each semiconductor element 22 to each bonding portion 322. Each of the plurality of conductive bonding layers 35 is, for example, solder. Alternatively, each of the plurality of conductive bonding layers 35 may include a sintered body of metal particles.

[0201] As shown in Fig. 34, the functional assembly ASSY4 further includes two conductive bonding layers 36. The two conductive bonding layers 36 are individually interposed between the two main body portions 321 of the conductive member 32 and the two power terminals 15. The two conductive bonding layers 36 conductively bond each main body portion 321 to each power terminal 15. Each of the two conductive bonding layers 36 is made of, for example, solder. Alternatively, each of the two conductive bonding layers 36 may include a sintered body of metal particles.

[0202] The sealing member 50 contacts the functional assembly ASSY4. The sealing member 50 partially covers the functional assembly ASSY4. The sealing member 50 covers the support member 10 (excluding the lower surface of the back surface wiring layer 13). The sealing member 50 covers the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22. The sealing member 50 covers the two conductive members 31, 32. The sealing member 50 covers the plurality of connecting members 41 to 46. The sealing member 50 covers a portion of each of the plurality of power terminals 14 to 16 and a portion of each of the plurality of signal terminals 17 (a plurality of signal terminals 171 to 177).

[0203] Similar to the sealing member 50 of the semiconductor device A10, the sealing member 50 of the semiconductor device A40 has a resin main surface 51, a resin back surface 52, and multiple resin side surfaces 531 to 534. The power terminal 14 and two power terminals 15 each protrude from the resin side surface 531, and the two power terminals 16 protrude from the resin side surface 532. Multiple signal terminals 17 (multiple signal terminals 171 to 177) protrude from the resin main surface 51. The lower surface of the back surface wiring layer 13 of the support member 10 is exposed from the resin back surface 52.

[0204] As shown in FIG. 29 and other figures, the sealing member 50 of the semiconductor device A40 has two recesses 55. Each of the two recesses 55 is recessed from the resin side surface 531 in the first direction x. Each of the two recesses 55 extends from the resin main surface 51 to the resin back surface 52 in the thickness direction z. As shown in FIG. 29 and other figures, the two recesses 55 are located on both sides of the power terminal 14 in the second direction y. Each of the two recesses 55 is individually disposed between the power terminal 14 and the two power terminals 15. The two recesses 55 increase the creepage distance along the sealing member 50 (resin side surface 531) between each power terminal 15 and the power terminal 14, thereby improving the dielectric strength between the power terminal 14 and each power terminal 15. Note that the sealing member 50 does not necessarily have to have two recesses 55.

[0205] The sealing member 50 of the semiconductor device A40 includes a covering portion 501 and a sealing portion 502, similar to the sealing member 50 of the semiconductor device A10. The covering portion 501 covers the entire surface of the functional assembly ASSY4 that faces the sealing portion 502. As shown in FIGS. 34 to 39 , the covering portion 501 covers the plurality of semiconductor elements 21 and the plurality of semiconductor elements 22. The covering portion 501 covers a portion of the support member 10 (a region of the upper surface of the insulating substrate 11 that is exposed from the main-surface wiring layer 12 and a region of the main-surface wiring layer 12 to which no other members are joined). The covering portion 501 covers the upper surfaces (surfaces facing upward in the thickness direction z) of the conductive members 31 and 32. The covering portion 501 covers the plurality of connecting members 41 to 46. The covering portion 501 covers the upper surfaces (surfaces facing upward in the thickness direction z) of the two signal substrates 601 and 602.

[0206] 37 , in the semiconductor device A40, each signal terminal 17 (each signal terminal 171 to 177) protrudes from the resin main surface 51, and the region of the resin main surface 51 from which each signal terminal 17 protrudes is covered by the barrier member 70 (protective portion 71). This is because the exposed end 80D at the interface between the functional assembly ASSY4 and each signal terminal 17 is disposed on the resin main surface 51.

[0207] In the semiconductor device A40, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A-80D at the interface between the functional assembly ASSY4 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A40 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A-80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A40 can suppress deterioration of the functional assembly ASSY4 and suppress malfunctions. In addition, the semiconductor device A40 has a configuration in common with the other semiconductor devices A10, A20, and A30, and therefore exhibits the same effects as the semiconductor devices A10, A20, and A30.

[0208] Fifth Embodiment: FIGS. 40 to 46 show a semiconductor device A50 according to a fifth embodiment. The semiconductor device A50 differs from the semiconductor device A10 in the following respect: the semiconductor device A50 has a TO (Transistor Outline) type package structure. The semiconductor device A50 includes a functional assembly ASSY5 instead of the functional assembly ASSY1. That is, the semiconductor device A50 includes a functional assembly ASSY5, a sealing member 50, and a barrier member 70. The functional assembly ASSY5 includes a support member 90, a plurality of leads 91, 92, and 93, a semiconductor element 21, a conductive bonding layer 219, and two connecting members 41 and 42. In examples different from this configuration, the functional assembly ASSY5 may include two or more semiconductor elements 21, four or more leads, or three or more connecting members.

[0209] In this embodiment, the semiconductor device A50 is described as being in a TO-type package, but the package format of the semiconductor device A50 is not limited to the TO-type and can be applied to various package formats, such as a small outline package (SOP), a small outline J-leaded package (SOJ), a small outline non-leaded package (SON), a quad flat package (QFP), a quad flat J-leaded package (QFJ), a quad flat non-leaded package (QFN), and a ball grid array (BGA). The semiconductor device A50 is used in a power conversion circuit such as an inverter, but the use of the semiconductor device A50 is not limited to power conversion circuits.

[0210] As shown in FIGS. 41 and 43 to 46, the semiconductor element 21 is mounted on the support member 90. The support member 90 is a die pad that supports the semiconductor element 21. The support member 90, together with three leads 91, 92, and 93, are obtained from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the three leads 91, 92, and 93 of the support member 90 includes copper.

[0211] 43 to 46 , the support member 90 has a main surface 901 and a back surface 902. The main surface 901 faces the side facing the semiconductor element 21 in the thickness direction z. The main surface 901 is covered with the sealing member 50 except for a portion. The back surface 902 faces the opposite side to the main surface 901 in the thickness direction z. The back surface 902 is plated with, for example, tin (Sn) (not shown). The back surface 902 is exposed from the sealing member 50.

[0212] As shown in FIG. 41 and other figures, the support member 90 has a first portion 90A and a second portion 90B connected to the first portion 90A. When viewed in the thickness direction z, the second portion 90B is located on the y1 side of the first portion 90A in the second direction y (the side opposite to the side where the leads 91 to 93 are located). The second portion 90B is covered with the sealing member 50. The first portion 90A includes a back surface 902. The second portion 90B has a through portion 903. The through portion 903 penetrates the second portion 90B in the thickness direction z. The through portion 903 has a circular shape when viewed in the thickness direction z. In the semiconductor device A50, the first dimension t1 in the thickness direction z of the first portion 90A is larger than the second dimension t2 in the thickness direction z of the second portion 90B. In the semiconductor device A50, the dimension of the second portion 90B in the second direction y is larger than the dimension of the back surface 902 in the second direction y.

[0213] The main surface 901 has a support surface 9010. The support surface 9010 faces the semiconductor element 21 in the thickness direction z. The semiconductor element 21 is mounted on the support surface 9010. The support surface 9010 corresponds to the main surface 901 of the first part 90A. As shown in FIGS. 9 and 10 , the support surface 9010 has a contact region 9011 that contacts the conductive bonding layer 219 and a non-contact region 9012 that does not contact the conductive bonding layer 219. In a plan view, the non-contact region 9012 surrounds the contact region 9011.

[0214] 41 and other figures, the lead 91 includes a portion extending in the second direction y and is connected to the support member 90. This provides electrical continuity between the lead 91 and the back electrode 211 of the semiconductor element 21. Therefore, the lead 91 corresponds to the drain terminal of the semiconductor device A50. The lead 91 is located on the opposite side of the second portion 90B from the first portion 90A in the second direction y.

[0215] As shown in FIG. 41 and other figures, the lead 91 includes a covering portion 911 and an exposed portion 912. The covering portion 911 is connected to the first portion 90A of the support member 90 and is covered by the sealing member 50. When viewed in the second direction y, the covering portion 911 is bent. The exposed portion 912 is connected to the covering portion 911 and is exposed from the sealing member 50. The exposed portion 912 protrudes from the sealing member 50 on the side opposite to the side on which the support member 90 is located in the second direction y. In the illustrated example, the exposed portion 912 extends straight, but may be partially bent. The surface of the exposed portion 912 is, for example, tin-plated.

[0216] As shown in FIG. 41 and other figures, the lead 92 is located away from the support member 90. The lead 92 extends in the second direction y. In the semiconductor device A50, the lead 92 is a wiring portion that is located away from the support member 90. The lead 92 is electrically connected to the main surface electrode 212 of the semiconductor element 21 via the connection member 41. Therefore, the lead 92 corresponds to the source terminal of the semiconductor device A50. The lead 92 is located next to the lead 91 in the first direction x.

[0217] As shown in FIG. 41 and other figures, the lead 92 has a covering portion 921, an exposed portion 922, and a bonding surface 923. The covering portion 921 is covered by the sealing member 50. The exposed portion 922 is connected to the covering portion 921 and is exposed from the sealing member 50. The exposed portion 922 protrudes from the sealing member 50 on the side opposite the side on which the support member 90 is located in the second direction y. In the illustrated example, the exposed portion 922 extends straight, but may be partially bent. The surface of the exposed portion 922 is, for example, tin-plated. The bonding surface 923 faces the same side as the main surface 901 of the support member 90 in the thickness direction z. The bonding surface 923 is included as part of the covering portion 921. The bonding surface 923 is located on the side on which the semiconductor element 21 is located relative to the main surface 901 in the thickness direction z.

[0218] As shown in FIG. 41 and other figures, the lead 93 is located away from the support member 10. The lead 93 extends in the second direction y. In the semiconductor device A41, the lead 93 is a wiring portion that is located away from the support member 10. The lead 93 is electrically connected to the main surface electrode 213 of the semiconductor element 21. Therefore, the lead 93 corresponds to the gate terminal of the semiconductor device A41. The lead 93 is located on the opposite side of the lead 92 from the lead 91 in the first direction x.

[0219] As shown in FIG. 41 and other figures, the lead 93 has a covering portion 931, an exposed portion 932, and a bonding surface 933. The covering portion 931 is covered by the sealing member 50. The exposed portion 932 is connected to the covering portion 931 and exposed from the sealing member 50. The exposed portion 932 protrudes from the sealing member 50 on the side opposite the side on which the support member 90 is located in the second direction y. In the illustrated example, the exposed portion 932 extends straight, but may be partially bent. The surface of the exposed portion 932 is, for example, tin-plated. The bonding surface 933 faces the same side as the main surface 901 of the support member 90 in the thickness direction z. The bonding surface 933 is included as part of the covering portion 931. In the thickness direction z, the position of the bonding surface 933 is the same as the position of the bonding surface 923 of the lead 92.

[0220] 41 and other figures, the leads 91, 92, and 93 are arranged along the first direction x. The exposed portions 912, 922, and 932 of the leads 91, 92, and 93 are all at the same height from the resin rear surface 52 of the sealing member 50, which will be described later.

[0221] In the semiconductor device A50, the semiconductor element 21 is bonded to the support member 90 by a conductive bonding layer 219. The back electrode 211 of the semiconductor element 21 is conductively bonded to the support surface 9010 of the support member 90 via the conductive bonding layer 219. In the illustrated example, the entire conductive bonding layer 219 is located between the semiconductor element 21 and the support member 90 in the thickness direction z. Unlike this example, a portion of the conductive bonding layer 219 may be configured to cover each element side surface 21 c of the semiconductor element 21.

[0222] 44 , the conductive bonding layer 219 has a first surface 2191, a second surface 2192, and a third surface 2193. The first surface 2191 faces upward in the thickness direction z and faces the semiconductor element 21. The first surface 2191 is in contact with the semiconductor element 21. The second surface 2192 faces downward in the thickness direction z and faces the support member 90. The second surface 2192 is in contact with the support member 90. In a plan view, the area of ​​the second surface 2192 is larger than the area of ​​the first surface 2191. The third surface 2193 faces upward in the thickness direction z and is connected to the first surface 2191 and the second surface 2192. The third surface 2193 is in contact with the sealing member 50 (a covering portion 501, described later, in the semiconductor device A50). In the present embodiment, the third surface 2193 is inclined with respect to each of the first surface 2191 and the second surface 2192. The third surface 2193 is inclined so that the area of ​​a cross section perpendicular to the thickness direction z increases from the side connected to the first surface 2191 toward the side connected to the second surface 2192.

[0223] 42 , the conductive bonding layer 219 has, for example, a rectangular shape in a plan view. In this example, the peripheral edge 219a of the conductive bonding layer 219 has a shape in a plan view. Furthermore, in a plan view, the conductive bonding layer 219 has four corners 219b. The four corners 219b correspond to the four corners of the conductive bonding layer 219 in a plan view. Each of the four corners 219b may be curved in a plan view.

[0224] In the semiconductor device A50, as shown in FIG. 41 and other figures, the connection member 41 is conductively bonded to the principal surface electrode 212 of the semiconductor element 21 and the bonding surface 923 of the lead 92. This electrically connects the lead 92 to the principal surface electrode 212. As shown in FIG. 43 , the connection member 41 has two bonding portions 411 and 412 and an intermediate portion 413. The bonding portion 411 is located at one end of the connection member 41 and is bonded to the principal surface electrode 212. The bonding portion 412 is located at the other end of the connection member 41 and is bonded to the bonding surface 923. The intermediate portion 413 is interposed between the two bonding portions 411 and 412 and is connected to them. In an example in which the connection member 41 is a bonding wire, the intermediate portion 413 is a loop portion. In the illustrated example, the thickness (wire diameter) of the connection member 41 is larger than the thickness (wire diameter) of the connection member 42, but this is not limiting.

[0225] In the semiconductor device A50, as shown in FIG. 41 , the connection member 42 is electrically connected to the principal surface electrode 213 of the semiconductor element 21 and the bonding surface 933 of the lead 93. This electrically connects the lead 93 to the principal surface electrode 213. As shown in FIG. 7 , the connection member 42 has two bonding portions 421, 422 and an intermediate portion 423. The bonding portion 421 is located at one end of the connection member 42 and is bonded to the principal surface electrode 213. The bonding portion 422 is located at the other end of the connection member 42 and is bonded to the bonding surface 933. The intermediate portion 423 is interposed between the two bonding portions 421, 422 and is connected to the two bonding portions 421, 422. In an example in which the connection member 42 is a bonding wire, the intermediate portion 423 is a loop portion.

[0226] Similar to the sealing member 50 of the semiconductor device A10, the sealing member 50 of the semiconductor device A50 has a resin main surface 51, a resin rear surface 52, and a plurality of resin side surfaces 531 to 534. Three leads 91 to 93 each protrude from the resin side surface 534.

[0227] 40 and 41 , the sealing member 50 of the semiconductor device A50 has two openings 57. As shown in FIG. 41 , the two openings 57 are spaced apart from each other in the first direction x. Each of the two openings 57 is recessed inward into the sealing member 50 from both the resin main surface 51 and one of the two resin side surfaces 533, 534. A portion of the main surface 901 of the second portion 90B of the support member 90 is exposed from each of the two openings 57.

[0228] 40 , 41 , and 46 , the sealing member 50 of the semiconductor device A50 has an attachment portion 58. The attachment portion 58 penetrates in the thickness direction z from the resin main surface 51 to the resin back surface 52. As shown in FIG. 41 , in plan view, the attachment portion 58 is surrounded by the through portion 903 of the second part 90B of the support member 90. That is, in plan view, the attachment portion 58 is contained within the through portion 903.

[0229] 46 , the sealing member 50 of the semiconductor device A50 has an inner circumferential surface 581 that is connected to the resin main surface 51 and the resin back surface 52 and that defines an attachment portion 58. The attachment portion 58 includes a first hole edge 58A that is the boundary between the inner circumferential surface 581 and the resin main surface 51, and a second hole edge 58B that is the boundary between the inner circumferential surface 581 and the resin back surface 52. As shown in FIG. 46 , in a plan view, the first hole edge 58A surrounds the second hole edge 58B.

[0230] 43, 45, and 46, a second dimension t2 in the thickness direction z of the second portion 90B of the support member 90 and a third dimension t3 in the thickness direction z of the portion of the sealing member 50 extending from the resin back surface 52 to the second portion 90B are different from each other. The second dimension t2 is greater than the third dimension t3.

[0231] The covering portion 501 of the semiconductor device A50 is located above the support surface 9010 in the thickness direction z. In this embodiment, the covering portion 501 covers the non-contact region 9012 of the support surface 9010, the third surface 2193 of the conductive bonding layer 219, and the semiconductor element 21. In particular, the covering portion 501 covers the entire main surface 901 of the second portion 90B. As described above, the term "covering the entire surface" in this disclosure does not necessarily mean strictly covering the entire surface unless otherwise specified, and may include portions that are not completely covered due to manufacturing precision, etc. For example, in the example shown in FIGS. 3 and 7 , a portion of the main surface 901 slightly inward from the periphery of the opening 57 in a plan view is not covered by the covering portion 501. Furthermore, the covering portion 501 covers the entire conductive bonding layer 219. As shown in FIG. 42 , the covering portion 501 covers the entire periphery 219a of the conductive bonding layer 219. Therefore, the covering portion 501 covers the four corners (four corners 219b) of the conductive bonding layer 219 in a plan view. Also, the covering portion 501 covers a part of the bonding portion 411 of the connecting member 41 and a part of the bonding portion 421 of the connecting member 42, as shown in FIGS.

[0232] The sealing portion 502 is located above the covering portion 501 in the thickness direction z. The sealing portion 502 covers the support member 90 (excluding the rear surface 902), a portion of each of the leads 91 to 93 (each of the covering portions 911, 921, 931), the two connecting members 41 and 42, the semiconductor element 21, and the conductive bonding layer 219. The thickness of the sealing portion 502 is greater than the thickness of the covering portion 501.

[0233] The ratio of the thickness t501 (dimension in the thickness direction z) of the covering portion 501 shown in FIG. 44 to the thickness t50 from the main surface 901 of the sealing member 50 to the resin main surface 51 shown in FIG. 44 is, for example, 1:40, but this ratio is not limited to any particular value. In this embodiment, the thickness t501 of the covering portion 501 is, for example, 0.1 mm or more and 0.2 mm or less, and the thickness t50 from the main surface 901 of the sealing member 50 to the resin main surface 51 is, for example, approximately 4 mm. The thickness t501 and the thickness t50 of the covering portion 501 are not limited to the above example. The thickness t501 (dimension in the thickness direction z) of the covering portion 501 is, for example, approximately the same as the thickness (dimension in the thickness direction z) of the conductive bonding layer 219. This may also be true for the semiconductor device A10 described above.

[0234] 41 and 46 , in the semiconductor device A50, the exposed end portion 80A is a portion exposed to the outside at the interface between each surface (top, bottom, and side) of the lead 91 of the functional assembly ASSY5 and the sealing member 50. In an example in which the lead 91 protrudes from the resin side surface 534, the exposed end portion 80A is located on the resin side surface 534.

[0235] 41 and 43 , in the semiconductor device A50, the exposed end portion 80B is a portion that is exposed to the outside at the interface between each surface (top, bottom, and side surface) of the lead 92 of the functional assembly ASSY5 and the sealing member 50. In an example in which the lead 92 protrudes from the resin side surface 534, the exposed end portion 80B is located on the resin side surface 534.

[0236] 41 and 45 , in the semiconductor device A50, the exposed end portion 80C is a portion that is exposed to the outside at the interface between each surface (top, bottom, and side) of the lead 93 of the functional assembly ASSY5 and the sealing member 50. In an example in which the lead 93 protrudes from the resin side surface 534, the exposed end portion 80C is located on the resin side surface 534.

[0237] In the semiconductor device A50, the exposed end portion 80D is a portion exposed to the outside at the interface between the support member 90 (second portion 90B) of the functional assembly ASSY5 and the sealing member 50, as shown in FIG.

[0238] The functions and effects of the semiconductor device A50 are as follows.

[0239] In the semiconductor device A50, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each of the exposed ends 80A-80D at the interface between the functional assembly ASSY 5 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A50 can prevent the intrusion of liquid (e.g., water) or gas from each of the exposed ends 80A-80D by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A50 can suppress deterioration of the functional assembly ASSY 5 and suppress operational malfunctions. In addition, the semiconductor device A50 has a configuration in common with the other semiconductor devices A10, A20, A30, and A40, and therefore exhibits the same effects as the semiconductor devices A10, A20, A30, and A40.

[0240] In the semiconductor device A50, the covering portion 501 covers the entire third surface 2193 of the conductive bonding layer 219. Peeling of the sealing member 50 can occur at the interface between the conductive bonding layer 219 and the sealing member 50. Therefore, in the semiconductor device A10, the entire third surface 2193 of the conductive bonding layer 219 is covered with the covering portion 501, which can further enhance the effect of suppressing peeling of the sealing member 50.

[0241] In the semiconductor device A50, the covering portion 501 covers the entire non-contact region 9012. Peeling of the sealing member 50 can occur at the interface between the sealing member 50 and the conductive bonding layer 219, and then at the interface between the sealing member 50 and the support member 90. Therefore, in the semiconductor device A50, the entire non-contact region 9012 is covered with the covering portion 501, which can further enhance the effect of suppressing peeling of the sealing member 50.

[0242] 47 shows a semiconductor device A51 according to a first modified example of the fifth embodiment. The semiconductor device A51 differs from the semiconductor device A50 in the range in which the covering portion 501 is formed. In the semiconductor device A51, a portion of the support member 90 is exposed from each opening 57 of the sealing member 50, but in the semiconductor device A51, this exposed portion is covered with the covering portion 501.

[0243] The semiconductor device A51 configured as described above achieves the same effects as the semiconductor device A50. Furthermore, in the semiconductor device A51, the support member 90 is not exposed in each opening 57 of the sealing member 50. This allows the semiconductor device A51 to suppress unintended short circuits more effectively than the semiconductor device A50.

[0244] In the first embodiment, the covering portion 501 covers the entire main surface 901 of the support member 90 (the main surface 901 of the first portion 90A and the main surface 901 of the second portion 90B). However, unlike this example, the main surface 901 of the second portion 90B does not need to be covered by the covering portion 501 (it may be in contact with the sealing portion 502). The semiconductor element 21 is bonded to the first portion 90A, and the lower surface (rear surface 902) of the first portion 90A is exposed from the sealing member 50. In this configuration, heat from the semiconductor element 21 is released from the lower surface (rear surface 902) of the first portion 90A, and heat transfer to the second portion 90B is reduced. In other words, the thermal load on the sealing member 50 is reduced in the second portion 90B, thereby reducing peeling of the sealing member 50. From this perspective, the covering portion 501 does not need to cover the main surface 901 of the second portion 90B. In this case, the area where the covering portion 501 is formed can be reduced, which is preferable in terms of suppressing the warpage deformation of the support member 90 described above.

[0245] 48 to 50 show a semiconductor device A52 according to a second modified example of the fifth embodiment. The semiconductor device A52 differs from the semiconductor device A50 in the following respect: the covering portion 501 does not cover the element main surface 21 a of the semiconductor element 21.

[0246] In the semiconductor device A52, the covering portion 501 has an opening 501A. The opening 501A penetrates in the thickness direction z from the upper surface (the surface facing upward in the thickness direction z) of the covering portion 501 to the lower surface (the surface facing downward in the thickness direction z) of the covering portion 501. In the semiconductor device A52, the opening 501A is formed along each element side surface 21c of the semiconductor element 21, and a portion (a portion on the lower side in the thickness direction z) of each element side surface 21c is covered by the covering portion 501. The semiconductor element 21 (element main surface 21a) is exposed from the opening 501A. In this way, since the element main surface 21a of the semiconductor element 21 is exposed from the covering portion 501, in the semiconductor device A52, it is possible to connect two connecting members 41, 42 after the covering portion 501 is formed. In the semiconductor device A52, the covering portion 501 covers the entire non-contact region 9012 of the support surface 9010, as in the semiconductor device A50.

[0247] In the semiconductor device A52, similar to the semiconductor device A50, the sealing member 50 includes a covering portion 501 and a sealing portion 502, and the plastic strain range of the covering portion 501 is larger than the plastic strain range of the sealing portion 502. Therefore, similar to the semiconductor device A50, the semiconductor device A52 can suppress peeling of the sealing member 50 due to thermal load. In addition, the semiconductor device A52 has a configuration in common with the other semiconductor devices A50 and A51, and therefore achieves the same effects as the semiconductor devices A50 and A51.

[0248] 51 to 53 show a semiconductor device A53 according to a third modification of the fifth embodiment. The semiconductor device A53 differs from the semiconductor device A52 in the following respect: a portion of the third surface 2193 of the conductive bonding layer 219 is exposed in the opening 501A.

[0249] In the semiconductor device A53, the periphery of the semiconductor element 21 (the plurality of element side surfaces 21c) is enclosed within the opening 501A in a plan view. As a result, a part of the third surface 2193 (the part closer to the semiconductor element 21) is exposed from the covering portion 501.

[0250] The semiconductor device A53 configured as described above also achieves the same effects as the semiconductor device A52. As can be seen from the semiconductor device A53, in the semiconductor device of the present disclosure, the covering portion 501 may or may not be in contact with the semiconductor element 21. However, in terms of reducing the contact area between the sealing portion 502 and the conductive bonding layer 219, the semiconductor device A52 is preferable to the semiconductor device A53.

[0251] In semiconductor device A53, as shown in Figure 53, an example is shown in which the thickness of the covering portion 501 gradually changes along the third surface 2193, but unlike this example, as shown in Figure 54, the thickness of the covering portion 501 may be uniform.

[0252] 55 and 56 show a semiconductor device A54 according to a fourth modified example of the fifth embodiment. The semiconductor device A54 differs from the semiconductor device A53 in the following respect: the covering portion 501 is formed in a ring shape in a plan view.

[0253] In the semiconductor device A54, the covering portion 501 overlaps the entire periphery of the periphery 219a in a plan view. In a plan view, the outer periphery of the covering portion 501 is located outward from the periphery 219a of the conductive bonding layer 219. In the illustrated example, the periphery 219a is rectangular, so the covering portion 501 is rectangular-annular. Note that the shape of the covering portion 501 is not limited to a rectangular annular shape, and it may be a circular annular shape, an elliptical annular shape, or a polygonal annular shape, as long as it overlaps the entire periphery of the periphery 219a in a plan view. In the semiconductor device A54, the opening 501A corresponds to the inner periphery of the covering portion 501. In other words, in a plan view, in the semiconductor device A54, in which the periphery of the semiconductor element 21 (multiple element side surfaces 21c) is enclosed within the opening 501A, as in the semiconductor device A53, the semiconductor element 21 is located inside the inner periphery of the covering portion 501. In the example shown in FIG. 56, the thickness of the covering portion 501 on the third surface 2193 gradually changes, as in FIG. 53, but unlike this example, it may be uniform, as in FIG.

[0254] The semiconductor device A54 configured as described above also achieves the same effects as the semiconductor device A52. As can be seen from the semiconductor device A54, in the semiconductor device of the present disclosure, the covering portion 501 is not limited to covering the entire non-contact region 9012 of the main surface 901.

[0255] 57 and 58 show a semiconductor device A55 according to a fifth modified example of the fifth embodiment. The semiconductor device A55 differs from the semiconductor device A50 in the following respect: the covering portion 501 is divided into a plurality of portions.

[0256] In the semiconductor device A55, the covering portion 501 includes a plurality of separating portions 5010. Each separating portion 5010 individually covers one of the four corners (four corner portions 219b) of the conductive bonding layer 219 in a plan view.

[0257] The semiconductor device A55 configured as described above achieves the same effects as the semiconductor device A50. For example, like the semiconductor device A50, the semiconductor device A55 also includes a barrier member 70. Therefore, like the semiconductor device A50, the semiconductor device A55 can suppress deterioration of the functional assembly ASSY5 and suppress operational malfunctions. Also, like the semiconductor device A50, the sealing member 50 in the semiconductor device A55 includes a covering portion 501 and a sealing portion 502, and the plastic strain range of the covering portion 501 is larger than the plastic strain range of the sealing portion 502. Therefore, like the semiconductor device A50, the semiconductor device A55 can suppress peeling of the sealing member 50 due to thermal load. Furthermore, the semiconductor device A50 has a common configuration with the other semiconductor devices A50 to A54, thereby achieving the same effects as the semiconductor devices A50 to A54.

[0258] 59 shows a semiconductor device A60 according to a sixth embodiment. The semiconductor device A60 differs from the semiconductor device A10 in the following respects. The semiconductor device A60 includes a functional assembly ASSY6 instead of the functional assembly ASSY1. That is, the semiconductor device A60 includes a functional assembly ASSY6, a sealing member 50, and a barrier member 70.

[0259] The functional assembly ASSY 6 includes an insulating substrate 95 , a wiring pattern 96 , a plurality of through-wires 971 , and a plurality of external electrodes 972 .

[0260] The insulating substrate 95 supports the semiconductor element 21. For example, an insulating semiconductor substrate, a ceramic substrate, or an insulating resin substrate can be used as the insulating substrate 95. The sealing member 50 is formed on the insulating substrate 95.

[0261] The wiring pattern 96 is formed on the upper surface (surface facing upward in the thickness direction z) of the insulating substrate 95. The wiring pattern 96 includes, for example, Cu or a Cu alloy, but may also include other metals. The wiring pattern 96 includes a conductor portion 961 as a support member and multiple conductor portions 962 as wiring portions. The semiconductor element 21 (back electrode 211) is bonded to the conductor portion 961 via a conductive bonding layer 219. If the semiconductor element 21 of the semiconductor device A60 has a back electrode 211 (not shown), it is electrically connected to the conductor portion 961 via the conductive bonding layer 219. On the other hand, if the semiconductor element 21 of the semiconductor device A60 does not have a back electrode 211, an insulating bonding layer may be used instead of the conductive bonding layer 219. For example, if the semiconductor element 21 is a horizontal transistor or integrated circuit (IC), it may not have a back electrode 211. Multiple connection members 40 are individually bonded to the multiple conductor portions 962. The plurality of connection members 40 are bonding wires, similar to the plurality of connection members 41, 42, etc.

[0262] Each of the plurality of through wires 971 penetrates the insulating substrate 95 in the thickness direction z. The plurality of through wires 971 are individually connected to the plurality of conductor portions 962. Each of the through wires 971 contains, for example, Cu or a Cu alloy, but may also contain other metals.

[0263] The plurality of external electrodes 972 are individually connected to the plurality of through wires 971. The plurality of external electrodes 972 cover the lower surfaces (surfaces facing downward in the thickness direction z) of the plurality of through wires 971. The plurality of external electrodes 972 may each be formed of a single metal layer, a laminate of multiple metal layers, or a bonding bump such as solder.

[0264] 59 , in the semiconductor device A60, the exposed end 80 is exposed to the outside at the interface between the conductor portion 962 of the wiring pattern 96 and the sealing member 50. The protective portion 71 of the barrier member 70 covers the exposed end 80. In the example shown, the barrier member 70 has a protective portion 73 that covers the resin main surface 51, but the barrier member 70 does not have to have the protective portion 73. In addition, in the semiconductor device A60, an exposed end also exists at the interface between the insulating substrate 95 and the sealing member 50. Therefore, the protective portion 71 of the barrier member 70 covers the exposed end at the interface between the insulating substrate 95 and the sealing member 50.

[0265] In the semiconductor device A60, similar to the semiconductor device A10, the barrier member 70 covers at least a portion of each exposed end 80 at the interface between the functional assembly ASSY 6 and the sealing member 50. Therefore, similar to the semiconductor device A10, the semiconductor device A60 can prevent the intrusion of liquid (e.g., water) or gas from each exposed end 80 by the barrier member 70. In other words, similar to the semiconductor device A10, the semiconductor device A60 can suppress deterioration of the functional assembly ASSY 6 and suppress operational malfunctions. In addition, the semiconductor device A60 has a configuration in common with the other semiconductor devices A10, A20, A30, A40, and A50, and therefore achieves the same effects as the semiconductor devices A10, A20, A30, A40, and A50.

[0266] The semiconductor device according to the present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the semiconductor device according to the present disclosure includes the following embodiments. Note that, although examples of each component in the following embodiments are indicated in parentheses using the symbols in the above-described embodiments (including modified examples), the present disclosure is not limited to these. Supplementary Note 1. A semiconductor device (A10) comprising: a functional assembly (ASSY1) including a semiconductor element (21); a sealing member (50) covering the semiconductor element (21) and in contact with the functional assembly (ASSY1); and a barrier member (70) having lower permeability than the sealing member (50), wherein the interface between the functional assembly (ASSY1) and the sealing member (50) has at least one exposed end portion (80A-80D) exposed to the outside, and the barrier member (70) covers at least a portion of the at least one exposed end portion (80A-80D). Supplementary Note 2. The semiconductor device (A10) according to Appendix 1, wherein the at least one exposed end (80A-80D) includes a plurality of exposed end portions (80A-80D), and the barrier member (70) covers all of the plurality of exposed end portions (80A-80D). Appendix 3. The semiconductor device (A20, A21) according to either Appendix 1 or Appendix 2, wherein the barrier member (70) covers, in addition to the at least one exposed end portion (80A-80D), a portion of the sealing member (50) whose linear distance from its surface exposed to the outside to the functional assembly (ASSY1) is 150 μm or less. Appendix 4. The semiconductor device (A10) according to any of Appendix 1 to Appendix 3, wherein the Young's modulus of the barrier member (70) is higher than the Young's modulus of the sealing member (50). Appendix 5. The semiconductor device (A10) according to any one of Supplementary Notes 1 to 4, wherein the breaking strain of the barrier member (70) is smaller than the breaking strain of the sealing member (50).Supplementary Note 6. The semiconductor device (A10) according to any one of Supplementary Notes 1 to 5, wherein the linear expansion coefficient of the barrier member (70) is smaller than the linear expansion coefficient of the sealing member (50).Supplementary Note 7. The semiconductor device (A10) according to any one of Supplementary Note 1 to Supplementary Note 6, wherein the functional assembly (ASSY1) includes a support member (10) that supports the semiconductor element (21) and a bonding layer (219) that bonds the semiconductor element (21) to the support member (10). Supplementary Note 7-1. The semiconductor device (A10) according to Supplementary Note 7, wherein the support member (10) includes an insulating substrate (11) and a main surface wiring layer (12) and a back surface wiring layer (13) that are individually bonded to the top and bottom of the insulating substrate (11) in the thickness direction (z). Supplementary Note 7-2. The semiconductor device (A10) according to Supplementary Note 7-1, wherein the bonding layer (219) is conductive and electrically connects the main surface wiring layer (12) and the semiconductor element (21). Supplementary Note 7-3. The semiconductor device (A10) according to Appendix 7-2, wherein the bonding layer (219) is any one of solder, sintered metal, or insert metal for solid-state diffusion bonding. Appendix 7-4. The semiconductor device (A50) according to Appendix 7, wherein the support member (90) is a die pad. Appendix 8. The semiconductor device (A50) according to Appendix 7, wherein the functional assembly (ASSY5) includes conductors (92, 93) spaced from the support member (90), and connection members (41, 42) that electrically connect the semiconductor element (21) and the conductors (92, 93). Appendix 8-1. The semiconductor device (A10) according to Appendix 8, wherein the semiconductor element (21) has an element main surface (21a) and an element back surface (21b) facing opposite each other in the thickness direction of the semiconductor element (21), main surface electrodes (212, 213) arranged on the element main surface (21a), and a back surface electrode (211) arranged on the element back surface (21b). Appendix 8-2. The semiconductor device (A10, A11) according to Appendix 8-1, wherein the connecting member (41, 42, 401) is conductively joined to the main surface electrodes (212, 213). Appendix 8-3. The semiconductor device (A10, A11) according to Appendix 8, wherein the connecting member (41, 42, 401) is a bonding wire. Appendix 9. The semiconductor device (A10) described in Appendix 7 or Appendix 8, wherein the sealing member (50) includes a covering portion (501) formed on the functional assembly (ASSY1) and a sealing portion (502) formed on the covering portion (501).Supplementary Note 10. The semiconductor device (A10) according to Supplementary Note 9, wherein the covering portion (501) covers the entire surface of the functional assembly (ASSY1) facing the sealing portion (502). Supplementary Note 10-1. The semiconductor device (A10, A11) according to Supplementary Note 9 or Supplementary Note 10, wherein the functional assembly includes bonding wires (41, 42, 401), and the covering portion (501) covers the outer peripheral surfaces of the bonding wires (41, 42, 401). Supplementary Note 11. The semiconductor device (A10) according to Supplementary Note 9 or Supplementary Note 10, wherein the Young's modulus of the sealing portion (502) is higher than that of the covering portion (501) and lower than that of the barrier member (70). Supplementary Note 12. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 11, wherein the fracture strain of the sealing portion (502) is smaller than the fracture strain of the covering portion (501) and larger than the fracture strain of the barrier member (70). Supplementary Note 13. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 12, wherein the linear expansion coefficient of the sealing portion (502) is smaller than the linear expansion coefficient of the covering portion (501) and larger than the linear expansion coefficient of the barrier member (70). Supplementary Note 14. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 13, wherein the plastic strain range of the covering portion (501) is larger than the plastic strain range of the sealing portion (502). Supplementary Note 14-1. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 14, wherein the sealing portion (502) contains a silica filler, and the covering portion (501) does not contain a silica filler. Supplementary Note 15. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 14, wherein the covering portion (501) contains a rubber material or a resin material. Supplementary Note 16. The semiconductor device (A10) according to any one of Supplementary Notes 9 to 15, wherein the sealing portion (502) contains an epoxy resin. Supplementary Note 17. The semiconductor device (A10) according to any one of Supplementary Notes 1 to 16, wherein the barrier member (70) contains alumina. Supplementary Note 17-1. The semiconductor device (A10) according to any one of Supplementary Notes 1 to 16, wherein the barrier member (70) contains an insulating material.Supplementary Note 17-2. The semiconductor device (A10) according to any one of Supplementary Note 1 to Supplementary Note 17, wherein the functional assembly (ASSY1) includes terminals (14) protruding from the sealing member (50), the terminals (14) being electrically connected to the semiconductor element (21), and the at least one exposed end portion (80A-80D) is an end portion exposed to the outside of the interface between the terminals (14) and the sealing member (50). Supplementary Note 17-2. The semiconductor device (A10) according to Supplementary Note 17-1, wherein the sealing member (50) has a first surface (531) from which the terminals (14) protrude, and the barrier member (70) covers at least a portion of the first surface (531) while covering at least a portion of the terminals (14).

[0267] A10 to A15, A20, A21, A30, A31: semiconductor device A40, A41, A50 to A55, A60: semiconductor device ASSY1, ASSY4, ASSY5, ASSY6: functional assembly 10: support member 11: insulating substrate 11a: substrate main surface 11b: substrate back surface 12: main surface wiring layer 121 to 127, 129: conductor portion 121a, 122a, 123a: pad portion 121b, 122b, 123b: pad portion 13: back surface wiring layer 14, 15, 16: power terminal 141, 151, 161: exposed portion 142, 152, 162: coated portion 149, 159, 169: conductive bonding material 17, 171 to 178: signal terminal 179: Conductive bonding material 21, 22: Semiconductor element 21a, 22a: Element main surface 21b, 22b: Element back surface 21c, 22c: Element side surface 211, 221: Back electrode 212, 213, 214, 222, 223, 224: Principal surface electrode 219, 229: Conductive bonding layer 219a, 229a: Periphery 219b, 229b: Corner portion 2191: First surface 2192: Second surface 2193: Third surface 23, 24: Thermistor 31: Conductive member 311: Main body portion 311a: Through hole 312: Joint portion 313: Joint portion 32: Conductive member 321: Main body portion 322: Joint portion 324: Joint portion 326: Middle portion 327: Cross beam portion 33 to 36: Conductive bonding layers 40 to 46, 401, 402: Connecting members 411, 412, 421, 422: Bonding portions 413, 423: Intermediate portions 50: Sealing member 501: Covering portion 501A: Opening 5010: Separation portion 502: Sealing portion 51: Resin main surface 52: Resin back surface 531 to 534: Resin side surfaces 541, 534, 544: Recesses 55: Recesses 57: Opening 58: Mounting portion 581: Inner peripheral surface 58A: First hole edge 58B: Second hole edge 601, 602: Signal board 61: Insulating layer 62: Wiring layer 621 to 625: Wiring portions 63: Metal layer 64: Sleeve 70: Barrier member 71, 72, 73: Protective portions 80, 80A to 80D: exposed end portion 90: support member 90A: first portion 90B: second portion 901: main surface 9010: support surface 9011: contact region 9012: non-contact region 902: back surface 903: through portion 91, 92,93: Lead 911, 921, 931: Covered portion 912, 922, 932: Exposed portion 923, 33: Bonding surface 95: Insulating substrate 96: Wiring pattern 961, 962: Conductor portion 971: Through wiring 972: External electrode

Claims

1. A semiconductor device comprising: a functional assembly including a semiconductor element; an encapsulating member covering the semiconductor element and in contact with the functional assembly; and a barrier member having a lower permeability than the encapsulating member, wherein the interface between the functional assembly and the encapsulating member has at least one exposed edge exposed to the outside, and the barrier member covers at least a portion of the at least one exposed edge.

2. The semiconductor device according to claim 1, wherein said at least one exposed end portion includes a plurality of exposed end portions, and said barrier member covers all of said plurality of exposed end portions.

3. The semiconductor device according to claim 1 or 2, wherein the barrier member covers not only the at least one exposed end but also a portion of the sealing member whose linear distance from the surface exposed to the outside to the functional assembly is 150 μm or less.

4. The semiconductor device according to claim 1, wherein the Young's modulus of the barrier member is higher than the Young's modulus of the sealing member.

5. The semiconductor device according to claim 1, wherein the breaking strain of said barrier member is smaller than the breaking strain of said sealing member.

6. The semiconductor device according to claim 1, wherein the coefficient of linear expansion of said barrier member is smaller than the coefficient of linear expansion of said sealing member.

7. The semiconductor device according to any one of claims 1 to 6, wherein the functional assembly includes a support member that supports the semiconductor element, and a bonding layer that bonds the semiconductor element to the support member.

8. The semiconductor device according to claim 7, wherein said functional assembly includes a conductor spaced apart from said support member, and a connecting member electrically connecting said semiconductor element and said conductor.

9. The semiconductor device according to claim 7 or 8, wherein the sealing member includes a covering portion formed on the functional assembly and a sealing portion formed on the covering portion.

10. The semiconductor device according to claim 9, wherein the covering portion covers the entire surface of the functional assembly facing the sealing portion.

11. The semiconductor device according to claim 9 or 10, wherein the Young's modulus of the sealing portion is higher than the Young's modulus of the covering portion and lower than the Young's modulus of the barrier member.

12. The semiconductor device according to any one of claims 9 to 11, wherein the breaking strain of the sealing portion is smaller than the breaking strain of the covering portion and larger than the breaking strain of the barrier member.

13. The semiconductor device according to any one of claims 9 to 12, wherein the linear expansion coefficient of the sealing portion is smaller than the linear expansion coefficient of the covering portion and larger than the linear expansion coefficient of the barrier member.

14. The semiconductor device according to any one of claims 9 to 13, wherein the plastic strain range of the covering portion is larger than the plastic strain range of the sealing portion.

15. The semiconductor device according to any one of claims 9 to 14, wherein the covering portion includes a rubber material or a resin material.

16. The semiconductor device according to any one of claims 9 to 15, wherein the sealing portion includes an epoxy resin.

17. The semiconductor device according to any one of claims 1 to 16, wherein the barrier member contains alumina.

Images