Semiconductor device and semiconductor module

Abstract

This semiconductor device comprises: a control terminal; a semiconductor element that has a first electrode, a second electrode, and a control electrode; a conductive member that is conductively bonded to the control terminal and the control electrode; and a sealing resin that covers a part of the control terminal, a part of the semiconductor element, and the conductive member. The first electrode has a first pad portion and a first terminal portion electrically connected to the first pad portion. The sealing resin has a first surface and a second surface that face opposite directions along a first direction. The first terminal portion is exposed from the first surface. The second electrode is exposed from the second surface. The control terminal is exposed from either the first surface or the second surface.

Description

Semiconductor device and semiconductor module

[0001] The present disclosure relates to a semiconductor device and a semiconductor module on which the semiconductor device is mounted.

[0002] Conventionally, semiconductor devices equipped with semiconductor elements having a switching function have been widely known. Such semiconductor devices are mainly used for power conversion. Patent Document 1 discloses an example of such a semiconductor device.

[0003] The semiconductor element mounted on the semiconductor device disclosed in Patent Document 1 has a source electrode and a drain electrode. The source electrode and the drain electrode are located on opposite sides of each other in a predetermined direction. An upper plate electrode is conductively bonded to the source electrode. A drain electrode pattern is conductively bonded to the drain electrode. The semiconductor element is sandwiched between the upper plate electrode and the drain electrode pattern. This configuration makes it possible to reduce the parasitic resistance of the semiconductor device while miniaturizing the semiconductor device. Here, the semiconductor element has a gate electrode for driving the semiconductor element. The gate electrode is located on the same side of the semiconductor element as the source electrode. A wire is conductively bonded to the gate electrode. Because the gate electrode is located at a predetermined position on the semiconductor element, the wire is close to the upper plate electrode in the semiconductor device. As a result, if the proximity between the wire and the upper plate electrode increases as the semiconductor element is miniaturized, there is a risk of a short circuit between the wire and the upper plate electrode.

[0004] JP 2013-258387 A

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce the size of a semiconductor element while increasing the degree of freedom regarding external connection of a control electrode of the semiconductor element.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a control terminal, a semiconductor element having a first electrode, a second electrode, and a control electrode, a conductive member conductively joined to the control terminal and the control electrode, and a sealing resin covering the control terminal, a portion of each of the semiconductor element, and the conductive member. The first electrode has a first pad portion and a first terminal portion located on one side of the first pad portion in a first direction and electrically connected to the first pad portion. The sealing resin has a first surface and a second surface facing opposite each other in the first direction. The first terminal portion is exposed from the first surface. The second electrode is exposed from the second surface. The control terminal is exposed from either the first surface or the second surface.

[0007] A semiconductor module according to a second aspect of the present disclosure includes the semiconductor device according to the first aspect of the present disclosure and a substrate including a first conductive portion, the semiconductor device being mounted on the substrate, and either the first terminal portion or the second electrode being conductively bonded to the first conductive portion.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing the sealing resin, the intermediate layer, and the protective layer through. FIG. 3 is a plan view corresponding to FIG. 2 , showing the first terminal portion of the first electrode of the semiconductor element and the bonding layer of the semiconductor element through. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1 . FIG. 5 is a left side view of the semiconductor device shown in FIG. 1 . FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3 . FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3 . FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3 . FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3 . FIG. 10 is a partially enlarged view of FIG. 6 . FIG. 11 is a cross-sectional view of a semiconductor module according to a first embodiment of the present disclosure. FIG. 12 is a cross-sectional view of a semiconductor module according to a second embodiment of the present disclosure. FIG. 13 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, corresponding to FIG. 3 . FIG. 14 is a bottom view of the semiconductor device shown in FIG. 13 . FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 13 . FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 13 . FIG. 17 is a plan view of a semiconductor device according to a third embodiment of the present disclosure, corresponding to FIG. 3 . FIG. 18 is a bottom view of the semiconductor device shown in FIG. 17 . FIG. 19 is a right side view of the semiconductor device shown in FIG. 17 . FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 17 . FIG. 21 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 22 is a bottom view of the semiconductor device shown in FIG. 21 . FIG. 23 is a left side view of the semiconductor device shown in FIG. 21 . FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 21 . FIG. 25 is a cross-sectional view of a semiconductor module according to a third embodiment of the present disclosure. FIG. 26 is a cross-sectional view of a semiconductor module according to a fourth embodiment of the present disclosure. FIG. 27 is a plan view of a semiconductor device according to a fifth embodiment of the present disclosure, corresponding to FIG. 3 . Fig. 28 is a bottom view of the semiconductor device shown in Fig. 27. Fig. 29 is a cross-sectional view taken along line XXIX-XXIX in Fig. 27. Fig. 30 is a plan view of a semiconductor device according to a sixth embodiment of the present disclosure, and corresponds to Fig. 3. Fig. 31 is a bottom view of the semiconductor device shown in Fig. 30. Fig. 32 is a cross-sectional view taken along line XXXII-XXXII in Fig. 30.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 10 . The semiconductor device A10 includes a semiconductor element 10, a control terminal 20, a conductive member 30, a sealing resin 40, an intermediate layer 50, and a protective layer 60. The semiconductor device A10 is surface-mounted on a wiring board or the like. For ease of understanding, FIG. 2 shows the sealing resin 40, the intermediate layer 50, and the protective layer 60 in a perspective view. In FIG. 2, the transparent sealing resin 40 is indicated by an imaginary line (a two-dot chain line). For ease of understanding, FIG. 3 shows the first terminal portion 112 (described in detail below) of the first electrode 11 of the semiconductor element 10 and the bonding layer 19 (described in detail below) of the semiconductor element 10 in a perspective view, compared to FIG. 2 . In FIG. 3, the transparent sealing resin 40 and the first terminal portion 112 are indicated by imaginary lines.

[0012] In describing the semiconductor device A10, for convenience, for example, the normal direction to the first surface 41 (details will be described later) of the sealing resin 40 will be referred to as the "first direction z." Furthermore, for example, the direction perpendicular to the first direction z will be referred to as the "second direction x." Furthermore, for example, the direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y." The semiconductor device A10 is rectangular when viewed in the first direction z.

[0013] 6 to 9, the sealing resin 40 covers the semiconductor element 10, a portion of each of the control terminals 20, and the conductive member 30. The sealing resin 40 has electrical insulating properties and is made of a material containing, for example, black epoxy resin.

[0014] 1 , 4 , and 6 , the sealing resin 40 has a first surface 41, a second surface 42, a third surface 43, and a fourth surface 44. The first surface 41 faces one side in the first direction z. The second surface 42 faces the opposite side from the first surface 41 in the first direction z. The third surface 43 faces one side in the second direction x. The fourth surface 44 faces the opposite side from the third surface 43 in the second direction x. The third surface 43 and the fourth surface 44 are connected to the first surface 41 and the second surface 42, respectively.

[0015] The semiconductor element 10 is a switching element. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). In the description of the semiconductor device A10, the semiconductor element 10 is a vertical-structure MOSFET.

[0016] As shown in FIGS. 3, 6 and 8, the semiconductor element 10 has a first electrode 11, a second electrode 12, a control electrode 13, a main body 14, a protective film 15 and a bonding layer 19.

[0017] The body 14 forms the functional center of the semiconductor device 10. The body 14 includes a compound semiconductor substrate. The compound semiconductor substrate includes silicon carbide (SiC). As shown in Figures 6 to 8, the body 14 is located between the first electrode 11 and the second electrode 12 in the first direction z.

[0018] 6 to 8 , the first electrode 11 is located on the side of the body 14 toward which the first surface 41 of the sealing resin 40 faces in the first direction z with respect to the body 14. The first electrode 11 is electrically connected to the body 14. A source current flows through the first electrode 11 when the semiconductor element 10 is driven. Therefore, the first electrode 11 corresponds to the source of the semiconductor element 10.

[0019] As shown in FIG. 2 and FIGS. 6 to 8 , the first electrode 11 has a first pad portion 111 and a first terminal portion 112. The first pad portion 111 is in contact with the main body 14. The first terminal portion 112 is located on the opposite side of the main body 14 from the first pad portion 111 in the first direction z. The dimension of the first terminal portion 112 in the first direction z is larger than the dimension of the first pad portion 111 in the first direction z. As viewed in the first direction z, the first terminal portion 112 protrudes outward beyond the main body 14. The first terminal portion 112 contains copper (Cu).

[0020] 6 to 8, the first terminal 112 is electrically connected to the first pad 111 via a bonding layer 19. The bonding layer 19 is, for example, solder. Alternatively, the bonding layer 19 may be a sintered body of metal particles. In this case, the metal particles contain, for example, silver (Ag). Furthermore, the bonding layer 19 may be a metal layer formed by solid-state diffusion.

[0021] 2, 6, and 8, the first terminal portion 112 has a first exposed surface 112A and an opening 112B. The first exposed surface 112A faces the same side as the first surface 41 of the sealing resin 40 in the first direction z. The first exposed surface 112A is exposed from the first surface 41 and is flush with the first surface 41. The opening 112B penetrates in the first direction z and opens from one side in the second direction x. When viewed in the first direction z, the opening 112B is spaced apart from the first pad portion 111.

[0022] 6 to 8 , the second electrode 12 is located on the opposite side of the body 14 from the first electrode 11. Therefore, the second electrode 12 is located on the opposite side of the body 14 from the first electrode 11 in the first direction z. The second electrode 12 is electrically connected to the body 14. A drain current flows through the second electrode 12 when the semiconductor element 10 is driven. Therefore, the second electrode 12 corresponds to the drain of the semiconductor element 10. The second electrode 12 is exposed from the second surface 42 of the sealing resin 40.

[0023] 6 and 8 , the control electrode 13 is located on the same side as the first electrode 11 with respect to the main body 14. Therefore, the control electrode 13 is located on the same side as the first electrode 11 in the first direction z. A gate voltage for driving the semiconductor element 10 is applied to the control electrode 13. Therefore, the control electrode 13 corresponds to the gate of the semiconductor element 10. As shown in FIG. 3 , the control electrode 13 overlaps the opening 112B of the first terminal portion 112 of the first electrode 11 when viewed in the first direction z.

[0024] As shown in FIGS. 6 to 8 , the protective film 15 is located on the opposite side of the main body 14 from the second electrode 12. The protective film 15 covers a portion of each of the first electrode 11, the control electrode 13, and the main body 14. The protective film 15 is an insulator. The protective film 15 includes, for example, polyimide or polybenzoxazole. The protective film 15 has a first opening 151 and a second opening 152 that each penetrate in the first direction z. The first opening 151 and the second opening 152 are spaced apart from each other in a direction perpendicular to the first direction z. The first pad portion 111 of the first electrode 11 is exposed from the first opening 151. The control electrode 13 is exposed from the second opening 152.

[0025] As shown in FIG. 10 , the first pad portion 111 of the first electrode 11 has a first portion 111A and a second portion 111B. The first portion 111A is in contact with the main body 14. The first portion 111A includes, for example, aluminum (Al). A protective film 15 covers a portion of the first portion 111A. The second portion 111B is located between the first portion 111A and the first terminal portion 112 in the first direction z. The second portion 111B is electrically connected to the first portion 111A. The first terminal portion 112 of the first electrode 11 is electrically connected to the second portion 111B via a bonding layer 19. The second portion 111B includes copper. Therefore, the first terminal portion 112 and the second portion 111B include the same metal element. The second portion 111B is formed by electroless plating.

[0026] 10 , with respect to the first pad portion 111 of the first electrode 11, the dimension t2 of the second portion 111B in the first direction z is larger than the dimension t1 of the first portion 111A in the first direction z. The second portion 111B is in contact with the protective film 15. A portion of the second portion 111B protrudes in the first direction z beyond the protective film 15. The remaining portion of the second portion 111B is accommodated in the first opening 151 of the protective film 15. As shown in FIG. 3 , the second portion 111B is located inward from the periphery of the first portion 111A when viewed in the first direction z.

[0027] As shown in FIG. 10 , the control electrode 13 has a third portion 131 and a fourth portion 132. The third portion 131 is in contact with the main body 14. The third portion 131 contains, for example, aluminum. The protective film 15 covers a portion of the third portion 131. The fourth portion 132 is located on the opposite side of the main body 14 from the third portion 131 in the first direction z. The fourth portion 132 is electrically connected to the third portion 131. The fourth portion 132 contains copper. Therefore, the fourth portion 132 and the second portion 111B of the first pad portion 111 contain the same element. The fourth portion 132 is formed by electroless plating.

[0028] 10 , the fourth portion 132 is in contact with the protective film 15. A portion of the fourth portion 132 protrudes in the first direction z beyond the protective film 15. The remaining portion of the fourth portion 132 is housed in the second opening 152 of the protective film 15. As shown in FIG. 3 , the fourth portion 132 is located inward from the periphery of the third portion 131 when viewed in the first direction z.

[0029] As shown in FIG. 3 , the control terminal 20 is located away from the semiconductor element 10. The control terminal 20 is electrically connected to the control electrode 13 of the semiconductor element 10. When viewed in the first direction z, the control terminal 20 overlaps the opening 112B of the first terminal portion 112 of the first electrode 11. The dimension of the control terminal 20 in the third direction y is smaller than the dimension of the opening 112B in the third direction y. As shown in FIG. 5 , when viewed in the second direction x, the control terminal 20 is located away from the first terminal portion 112 and overlaps the body 14 of the semiconductor element 10. The control terminal 20 contains copper. The control terminal 20 is formed from a lead frame.

[0030] 3, 4, and 6, the control terminal 20 has a first connection surface 21, a second connection surface 22, and a first end surface 23. The first connection surface 21 is covered with a sealing resin 40. The second connection surface 22 is exposed from a second surface 42 of the sealing resin 40. As shown in FIG. 5, the first end surface 23 is exposed from a third surface 43 of the sealing resin 40 and is flush with the third surface 43.

[0031] As shown in FIGS. 3 and 6 , the conductive member 30 is conductively bonded to the fourth portion 132 of the control electrode 13 and the first connection surface 21 of the control terminal 20. The conductive member 30 is a wire. The wire contains aluminum. Alternatively, the wire may contain gold (Au) or copper. Furthermore, the conductive member 30 may be a metal lead in addition to a wire. As shown in FIG. 3 , when viewed in the first direction z, the conductive member 30 overlaps the opening 112B of the first terminal portion 112 of the first electrode 11. At least a portion of the conductive member 30 is housed in the first terminal portion 112. As shown in FIG. 5 , when viewed in the second direction x, the conductive member 30 overlaps the first terminal portion 112 of the first electrode 11.

[0032] As shown in Figures 6 to 8, the intermediate layer 50 is located on the opposite side of the protective film 15 of the semiconductor element 10 from the main body 14. The intermediate layer 50 covers the protective film 15. The intermediate layer 50 is an insulator. The intermediate layer 50 is made of a material containing, for example, resin. The viscosity of the intermediate layer 50 in a fluid state is lower than the viscosity of the sealing resin 40 in a fluid state. The intermediate layer 50 covers a part of the fourth portion 132 of the control electrode 13 and a part of the conductive member 30. The intermediate layer 50 is covered by the sealing resin 40. A part of the intermediate layer 50 is accommodated in the opening 112B of the first terminal portion 112 of the first electrode 11.

[0033] 10 , the intermediate layer 50 includes a portion sandwiched between the protective film 15 of the semiconductor element 10 and the first terminal portion 112 of the first electrode 11 of the semiconductor element 10. The intermediate layer 50 is in contact with the second portion 111B of the first pad portion 111 of the first electrode 11 and the bonding layer 19 of the semiconductor element 10.

[0034] As shown in FIGS. 1, 4, and 6, the protective layer 60 is exposed to the outside. The protective layer 60 covers the first exposed surface 112A of the first terminal portion 112 of the first electrode 11 exposed from the first surface 41 of the sealing resin 40, the second electrode 12 exposed from the second surface 42 of the sealing resin 40, and the second connection surface 22 of the control terminal 20 exposed from the second surface 42. The protective layer 60 is a conductor containing a metal element. The metal element is silver (Ag), nickel-phosphorus (Ni—P), or tin (Sn). The protective layer 60 is formed by electroless plating or a sputtering method.

[0035] Next, a semiconductor module B10 on which the semiconductor device A10 is mounted will be described with reference to Fig. 11. The cross-sectional position shown in Fig. 11 corresponds to the cross-sectional position shown in Fig. 6.

[0036] As shown in FIG. 11 , the semiconductor module B10 includes the semiconductor device A10, a substrate 70, and a first conductive member 81. The semiconductor device A10 is mounted on the substrate 70. The substrate 70 includes an insulating substrate 71, a first conductive portion 72, and a second conductive portion 73. The first conductive portion 72 and the second conductive portion 73 are each located on one side of the insulating substrate 71 in the first direction z. The first conductive portion 72 and the second conductive portion 73 each contain copper. The first conductive member 81 is, for example, a metal clip containing copper. The second electrode 12 of the semiconductor element 10 of the semiconductor device A10 is conductively bonded to the first conductive portion 72 via a bonding layer 79. The bonding layer 79 is, for example, solder. The control terminal 20 of the semiconductor device A10 is conductively bonded to the second conductive portion 73 via the bonding layer 79. The bonding layer 79 is in contact with the first end surface 23 of the control terminal 20. The first conductive member 81 is conductively joined to the first terminal portion 112 of the first electrode 11 of the semiconductor element 10 of the semiconductor device A10 via the joining layer 79. In the semiconductor module B10, the drain and gate of the semiconductor device A10 face the base material 70.

[0037] In the semiconductor module B10, the substrate 70 is a wiring board. Alternatively, the substrate 70 may be configured to include a metal lead including a first conductive portion 72 and a second conductive portion 73. Furthermore, the substrate 70 may be configured to include an external terminal located on the opposite side of the insulating substrate 71 in the first direction z from the first conductive portion 72 and the second conductive portion 73.

[0038] Next, a semiconductor module B20 equipped with the semiconductor device A10 will be described with reference to Fig. 12. In this figure, elements that are the same as or similar to those in the semiconductor module B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position shown in Fig. 12 corresponds to the cross-sectional position shown in Fig. 6.

[0039] As shown in FIG. 12 , the semiconductor module B20 includes the semiconductor device A10, a base material 70, a first conductive member 81, and a second conductive member 82. The base material 70 includes an insulating substrate 71 and a first conductive portion 72. The second conductive member 82 is, for example, a wire containing aluminum. The first terminal portion 112 of the first electrode 11 of the semiconductor element 10 of the semiconductor device A10 is conductively bonded to the first conductive portion 72 via a bonding layer 79. The first conductive member 81 is conductively bonded to the second electrode 12 of the semiconductor element 10 of the semiconductor device A10 via the bonding layer 79. The second conductive member 82 is conductively bonded to the control terminal 20 of the semiconductor device A10. In the semiconductor module B20, the source of the semiconductor device A10 faces the base material 70.

[0040] Next, the effects of the semiconductor device A10 will be described.

[0041] The semiconductor device A10 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in a first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. This configuration allows the position of the control terminal 20 for external connection of the control electrode 13 to be set outward from the semiconductor element 10 when viewed in the first direction z. This makes it possible to effectively prevent interference between the external connection member conductively joined to the first electrode 11 and the external connection member conductively joined to the control terminal 20, even when the semiconductor element 10 is miniaturized. Therefore, in the semiconductor device A10, it is possible to improve the degree of freedom regarding the external connection of the control electrode 13 of the semiconductor element 10 while miniaturizing the semiconductor element 10.

[0042] In the semiconductor module B10 shown in Fig. 11 , the control terminal 20 is conductively joined to the second conductive portion 73 of the substrate 70. In the semiconductor module B20 shown in Fig. 12 , the control terminal 20 is conductively joined to the second conductive member 82. Therefore, as shown by the configurations of the semiconductor module B10 and the semiconductor module B20, each of which includes the semiconductor device A10, the configuration of the external connection member conductively joined to the control terminal 20 can be freely determined, thereby confirming an improvement in the degree of freedom regarding the external connection of the control electrode 13 of the semiconductor element 10.

[0043] When viewed in the second direction x, the conductive member 30 overlaps the first terminal portion 112 of the first electrode 11. By adopting this configuration, even if the first electrode 11, the second electrode 12, and the control terminal 20 are each exposed from the sealing resin 40, the semiconductor device A10 can ensure a storage space for the conductive member 30 in the first direction z.

[0044] The control terminals 20 are exposed from the third surface 43 of the sealing resin 40. By adopting this configuration, the control terminals 20 can be formed from the lead frame, thereby improving the manufacturing efficiency of the semiconductor device A10. Furthermore, in the semiconductor module B10 shown in FIG. 11 , the bonding layer 79 can be made to extend up to the portions of the control terminals 20 exposed from the third surface 43. This improves the bonding strength of the control terminals 20 to the substrate 70.

[0045] In the first electrode 11, the dimension of the first terminal portion 112 in the first direction z is larger than the dimension of the first pad portion 111 in the first direction z. With this configuration, the degree of heat diffusion in the direction perpendicular to the first direction z is greater in the first terminal portion 112 than in the first pad portion 111. This allows the heat generated in the first electrode 11 to be effectively released to the outside. Furthermore, by configuring the first terminal portion 112 to protrude outward beyond the body 14 of the semiconductor element 10 as viewed in the first direction z, the degree of heat diffusion in the first terminal portion 112 is further increased. This allows the heat generated in the first electrode 11 to be more effectively released to the outside.

[0046] The first pad portion 111 of the first electrode 11 has a first portion 111A and a second portion 111B. A dimension t2 of the second portion 111B in the first direction z is larger than a dimension t1 of the first portion 111A in the first direction z. The semiconductor element 10 has a protective film 15 that covers the main body 14 and a portion of the first electrode 11 and is an insulator. A portion of the second portion 111B protrudes beyond the protective film 15 in the first direction z. This configuration more reliably prevents the first terminal portion 112 of the first electrode 11 from coming into contact with the main body 14 when electrically connecting the first terminal portion 112 to the first pad portion 111.

[0047] The semiconductor device A10 further includes an intermediate layer 50, which is an insulator. The intermediate layer 50 includes a portion sandwiched between the protective film 15 of the semiconductor element 10 and the first terminal portion 112 of the first electrode 11. The intermediate layer 50 is in contact with the second portion 111B of the first pad portion 111 of the first electrode 11. With this configuration, the gap between the protective film 15 and the first terminal portion 112 is filled with the intermediate layer 50. This improves the dielectric strength of the semiconductor device A10.

[0048] The intermediate layer 50 is in contact with the bonding layer 19 of the semiconductor element 10. By adopting this configuration, it is possible to suppress the occurrence of leakage current from the first electrode 11 in the semiconductor device A10.

[0049] The first terminal 112 of the first electrode 11 has an opening 112B penetrating in the first direction z. The opening 112B opens from one side in the second direction x. As viewed in the first direction z, the control electrode 13 and the conductive member 30 each overlap the opening 112B. This configuration more reliably prevents short circuits between the control electrode 13 and the conductive member 30 and the first terminal 112.

[0050] When viewed in the first direction z, the control terminal 20 overlaps the opening 112B of the first terminal portion 112 of the first electrode 11. This configuration prevents the conductive member 30 from being excessively extended, thereby suppressing an increase in parasitic resistance associated with the conductive path between the control electrode 13 and the control terminal 20.

[0051] A portion of the intermediate layer 50 is accommodated in the opening 112B of the first terminal portion 112 of the first electrode 11. This configuration can prevent voids from forming in the opening 112B, thereby effectively improving the dielectric strength of the semiconductor device A10.

[0052] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 13 to 16. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 13 corresponds to Figure 3, which shows the semiconductor device A10. In Figure 13, the transparent sealing resin 40 and the transparent first terminal portion 112 of the first electrode 11 of the semiconductor element 10 are each shown by imaginary lines.

[0053] In the semiconductor device A20, the configuration of the second electrode 12 of the semiconductor element 10 is different from that of the semiconductor device A10.

[0054] 13 to 16, the second electrode 12 of the semiconductor element 10 has a second pad portion 121 and a second terminal portion 122. The second pad portion 121 is in contact with the main body 14. The second terminal portion 122 is located on the opposite side of the first electrode 11 from the second pad portion 121 in the first direction z. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. When viewed in the first direction z, the second terminal portion 122 protrudes outward beyond the main body 14. The second terminal portion 122 contains copper.

[0055] 15 and 16 , the second terminal 122 is electrically connected to the second pad 121 via the bonding layer 19. As shown in FIGS. 14 to 16 , the second terminal 122 has a second exposed surface 122A. The second exposed surface 122A faces the same side as the second surface 42 of the sealing resin 40 in the first direction z. The second exposed surface 122A is exposed from the second surface 42 and is flush with the second surface 42. The second surface 42 is covered with the protective layer 60.

[0056] 16 , when viewed in the second direction x, the control terminal 20 is spaced apart from the body 14 of the semiconductor element 10. The dimension of the control terminal 20 in the first direction z is equal to the dimension of the second terminal portion 122 of the second electrode 12 in the first direction z.

[0057] Next, the effects of the semiconductor device A20 will be described.

[0058] The semiconductor device A20 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in the first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. Therefore, with this configuration, even in the semiconductor device A20, it is possible to miniaturize the semiconductor element 10 while improving the degree of freedom regarding the external connection of the control electrode 13 of the semiconductor element 10. Furthermore, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0059] In the semiconductor device A20, the second electrode 12 has a second pad portion 121 and a second terminal portion 122. The second terminal portion 122 is exposed from the second surface 42 of the sealing resin 40. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. This configuration makes the degree of heat diffusion in the second terminal portion 122 in a direction perpendicular to the first direction z greater than that of the second pad portion 121. This allows heat generated in the second electrode 12 to be effectively released to the outside. Furthermore, by configuring the second terminal portion 122 to protrude outward beyond the body 14 of the semiconductor element 10 as viewed in the first direction z, the degree of heat diffusion in the second terminal portion 122 is further increased. This allows heat generated in the second electrode 12 to be more effectively released to the outside.

[0060] In the semiconductor device A20, the control terminal 20 is spaced apart from the body 14 of the semiconductor element 10 when viewed in the second direction x. The dimension of the control terminal 20 in the first direction z is equal to the dimension of the second terminal portion 122 of the second electrode 12 in the first direction z. By adopting this configuration, when manufacturing the semiconductor device A20, the second terminal portion 122 and the control terminal 20 can be formed from the same lead frame, and the lead frame can support the body 14. This improves the manufacturing efficiency of the semiconductor device A20.

[0061] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 17 to 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 17 corresponds to Figure 3, which shows the semiconductor device A10. In Figure 17, the transparent sealing resin 40 and the transparent first terminal portion 112 of the first electrode 11 of the semiconductor element 10 are each shown by imaginary lines.

[0062] In the semiconductor device A30, the configuration of the second electrode 12 of the semiconductor element 10 is different from that of the semiconductor device A20 described above.

[0063] 17 to 20 , the second terminal portion 122 of the second electrode 12 of the semiconductor element 10 has a second end surface 122B. The second end surface 122B faces the same side as the fourth surface 44 of the sealing resin 40 in the first direction z. The second end surface 122B is exposed from the fourth surface 44 and is flush with the fourth surface 44.

[0064] Next, the effects of the semiconductor device A30 will be described.

[0065] The semiconductor device A30 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in the first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. Therefore, with this configuration, even in the semiconductor device A30, it is possible to miniaturize the semiconductor element 10 while improving the degree of freedom regarding the external connection of the control electrode 13 of the semiconductor element 10. Furthermore, the semiconductor device A30 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0066] In the semiconductor device A30, the second electrode 12 has a second pad portion 121 and a second terminal portion 122. The second terminal portion 122 is exposed from the second surface 42 of the sealing resin 40. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. Furthermore, in the semiconductor device A30, the control terminal 20 is spaced apart from the body 14 of the semiconductor element 10 when viewed in the second direction x. The dimension of the control terminal 20 in the first direction z is equal to the dimension of the second terminal portion 122 of the second electrode 12 in the first direction z. Therefore, by adopting these configurations, the semiconductor device A30 also achieves the same effects as the semiconductor device A20 described above.

[0067] In the semiconductor device A30, the second terminal portion 122 of the second electrode 12 is exposed from the fourth surface 44 of the sealing resin 40. This configuration further increases the area of ​​the second exposed surface 122A of the second terminal portion 122. This allows the heat generated in the second electrode 12 to be more effectively dissipated to the outside.

[0068] 21 to 24, a semiconductor device A40 according to a fourth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0069] In the semiconductor device A40, the configuration of the control terminal 20 is different from that of the semiconductor device A10.

[0070] 21 and 24 , the second connection surface 22 of the control terminal 20, like the first connection surface 21, faces the same side as the first surface 41 of the sealing resin 40 in the first direction z. The second connection surface 22 is exposed from the first surface 41 and is flush with the first surface 41. As shown in FIGS. 23 and 24 , when viewed in the second direction x, the control terminal 20 overlaps each of the body 14 of the semiconductor element 10, the first terminal portion 112 of the first electrode 11 of the semiconductor element 10, and the conductive member 30.

[0071] Next, a semiconductor module B30 equipped with a semiconductor device A40 will be described with reference to Fig. 25. In this figure, elements that are the same as or similar to those in the semiconductor module B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position shown in Fig. 25 corresponds to the cross-sectional position shown in Fig. 24.

[0072] 25 , the semiconductor module B30 includes a semiconductor device A40, a base material 70, a first conductive member 81, and a second conductive member 82. The base material 70 includes an insulating substrate 71 and a first conductive portion 72. The second electrode 12 of the semiconductor element 10 of the semiconductor device A40 is conductively bonded to the first conductive portion 72 via a bonding layer 79. The first conductive member 81 is conductively bonded to the first terminal portion 112 of the first electrode 11 of the semiconductor element 10 of the semiconductor device A40 via the bonding layer 79. The second conductive member 82 is conductively bonded to the control terminal 20 of the semiconductor device A10. In the semiconductor module B30, the drain of the semiconductor device A40 faces the base material 70.

[0073] Next, a semiconductor module B40 equipped with a semiconductor device A40 will be described with reference to Fig. 26. In this figure, elements that are the same as or similar to those in the semiconductor module B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position shown in Fig. 26 corresponds to the cross-sectional position shown in Fig. 24.

[0074] 26 , the semiconductor module B40 includes the semiconductor device A40, a base material 70, and a first conductive member 81. The base material 70 includes an insulating substrate 71, a first conductive portion 72, and a second conductive portion 73. The first terminal portion 112 of the first electrode 11 of the semiconductor element 10 of the semiconductor device A40 is conductively bonded to the first conductive portion 72 via a bonding layer 79. The control terminal 20 of the semiconductor device A40 is conductively bonded to the second conductive portion 73 via the bonding layer 79. The first conductive member 81 is conductively bonded to the second electrode 12 of the semiconductor element 10 of the semiconductor device A40 via the bonding layer 79. In the semiconductor module B40, the source and gate of the semiconductor device A40 face the base material 70.

[0075] Next, the effects of the semiconductor device A40 will be described.

[0076] The semiconductor device A40 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in the first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. Therefore, with this configuration, the semiconductor device A40 can also achieve miniaturization of the semiconductor element 10 while improving the degree of freedom regarding external connection of the control electrode 13 of the semiconductor element 10. Furthermore, the semiconductor device A40 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0077] In the semiconductor module B30 shown in Fig. 25, the control terminal 20 is conductively joined to the second conductive member 82. In the semiconductor module B40 shown in Fig. 26, the control terminal 20 is conductively joined to the second conductive portion 73 of the substrate 70. Therefore, as shown by the configurations of the semiconductor module B30 and the semiconductor module B40, each of which includes the semiconductor device A40, the configuration of the external connection member conductively joined to the control terminal 20 can be freely determined, which confirms an improvement in the degree of freedom regarding the external connection of the control electrode 13 of the semiconductor element 10.

[0078] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 27 to 29. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 27 corresponds to Figure 3, which shows the semiconductor device A10. In Figure 27, the transparent sealing resin 40 and the transparent first terminal portion 112 of the first electrode 11 of the semiconductor element 10 are each shown by imaginary lines.

[0079] In the semiconductor device A50, the configuration of the second electrode 12 of the semiconductor element 10 is different from that of the semiconductor device A40 described above.

[0080] 27 to 29 , the second electrode 12 of the semiconductor element 10 has a second pad portion 121 and a second terminal portion 122. The second pad portion 121 is in contact with the main body 14. The second terminal portion 122 is located on the opposite side of the first electrode 11 from the second pad portion 121 in the first direction z. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. When viewed in the first direction z, the second terminal portion 122 protrudes outward beyond the main body 14. The second terminal portion 122 contains copper.

[0081] 29 , the second terminal 122 is electrically connected to the second pad 121 via the bonding layer 19. As shown in FIGS. 28 and 29 , the second terminal 122 has a second exposed surface 122A. The second exposed surface 122A faces the same side as the second surface 42 of the sealing resin 40 in the first direction z. The second exposed surface 122A is exposed from the second surface 42 and is flush with the second surface 42. The second surface 42 is covered with the protective layer 60.

[0082] As shown in FIG. 29 , the control terminal 20 is spaced apart from the second terminal portion 122 of the second electrode 12 when viewed in the second direction x.

[0083] Next, the effects of the semiconductor device A50 will be described.

[0084] The semiconductor device A50 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in the first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. Therefore, with this configuration, the semiconductor device A50 can also achieve miniaturization of the semiconductor element 10 while improving the degree of freedom regarding external connection of the control electrode 13 of the semiconductor element 10. Furthermore, the semiconductor device A50 has the same configuration as the semiconductor device A40, and thus exhibits the same effects as the semiconductor device A40.

[0085] In the semiconductor device A50, the second electrode 12 has a second pad portion 121 and a second terminal portion 122. The second terminal portion 122 is exposed from the second surface 42 of the sealing resin 40. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. Therefore, by adopting this configuration, the semiconductor device A50 also achieves the same effects as the semiconductor device A20 described above.

[0086] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 30 to 32. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 30 corresponds to Figure 3, which shows the semiconductor device A10. In Figure 30, the transparent sealing resin 40 and the transparent first terminal portion 112 of the first electrode 11 of the semiconductor element 10 are each shown by imaginary lines.

[0087] In the semiconductor device A60, the configuration of the second electrode 12 of the semiconductor element 10 is different from that of the semiconductor device A50 described above.

[0088] 30 to 32 , the second terminal portion 122 of the second electrode 12 of the semiconductor element 10 has a second end surface 122B. The second end surface 122B faces the same side as the fourth surface 44 of the sealing resin 40 in the first direction z. The second end surface 122B is exposed from the fourth surface 44 and is flush with the fourth surface 44.

[0089] Next, the effects of the semiconductor device A60 will be described.

[0090] The semiconductor device A60 includes a control terminal 20, a semiconductor element 10 having a first electrode 11, a second electrode 12, and a control electrode 13, a conductive member 30 conductively bonded to the control electrode 13 and the control terminal 20, and a sealing resin 40. The first electrode 11 has a first pad portion 111 and a first terminal portion 112. The sealing resin 40 has a first surface 41 and a second surface 42 facing opposite each other in the first direction z. The first terminal portion 112 is exposed from the first surface 41. The second electrode 12 is exposed from the second surface 42. The control terminal 20 is exposed from either the first surface 41 or the second surface 42. Therefore, with this configuration, the semiconductor device A60 can also achieve miniaturization of the semiconductor element 10 while improving the degree of freedom regarding external connection of the control electrode 13 of the semiconductor element 10. Furthermore, the semiconductor device A60 has the same configuration as the semiconductor device A40 described above, and thus exhibits the same effects as the semiconductor device A40.

[0091] In the semiconductor device A60, the second electrode 12 has a second pad portion 121 and a second terminal portion 122. The second terminal portion 122 is exposed from the second surface 42 of the sealing resin 40. The dimension of the second terminal portion 122 in the first direction z is larger than the dimension of the second pad portion 121 in the first direction z. Therefore, by adopting this configuration, the semiconductor device A60 also achieves the same effects as the semiconductor device A20 described above.

[0092] In the semiconductor device A60, the second terminal portion 122 of the second electrode 12 is exposed from the fourth surface 44 of the sealing resin 40. Therefore, by adopting this configuration, the semiconductor device A60 also achieves the same effects as the semiconductor device A30 described above.

[0093] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0094] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device (A10, A40) comprising: a control terminal (20); a semiconductor element (10) having a first electrode (11), a second electrode (12), and a control electrode (13); a conductive member (30) conductively joined to the control terminal and the control electrode; and a sealing resin (40) covering the control terminal, a portion of the semiconductor element, and the conductive member, wherein the first electrode has a first pad portion (111) and a first terminal portion (112) located on one side of the first pad portion in a first direction (z) and electrically connected to the first pad portion, the sealing resin has a first surface (41) and a second surface (42) facing opposite to each other in the first direction, the first terminal portion being exposed from the first surface, the second electrode being exposed from the second surface, and the control terminal being exposed from either the first surface or the second surface. Supplementary Note 2. The semiconductor device (A10) according to Supplementary Note 1, wherein the conductive member (30) overlaps the first terminal portion (112) when viewed in a second direction (x) perpendicular to the first direction (z). Supplementary Note 3. The semiconductor device (A10) according to Supplementary Note 2, wherein the sealing resin (40) has a third surface (43) facing one side of the second direction (x), and the control terminal (30) is exposed from the third surface. Supplementary Note 4. The semiconductor device (A10) according to Supplementary Note 3, wherein the second electrode (12) is located on the opposite side of the first electrode (11) in the first direction (z), and the control electrode (13) is located on the same side as the first electrode in the first direction. Supplementary Note 5. The semiconductor device (A10) according to Supplementary Note 4, wherein the dimension of the first terminal portion (112) in the first direction (z) is larger than the dimension of the first pad portion (111) in the first direction. Supplementary Note 6. The semiconductor device (A10) described in Appendix 5, wherein the semiconductor element (10) has a main body (14) located between the first electrode (11) and the second electrode (12) in the first direction (z), the first electrode and the second electrode are conductive to the main body, and when viewed in the first direction, the first terminal portion (112) protrudes outward from the main body.Supplementary Note 7. The semiconductor device (A10) according to Supplementary Note 6, wherein the first pad portion (111) has a first portion (111A) and a second portion (111B) located between the first portion and the first terminal portion (112) and electrically connected to the first portion, the first terminal portion is electrically connected to the second portion, and the dimension of the second portion in the first direction (z) is larger than the dimension of the first portion in the first direction. Supplementary Note 8. The semiconductor device (A10) according to Supplementary Note 7, wherein the semiconductor element (10) is located on the opposite side of the main body (14) from the second electrode (12) and has a protective film (15) that is an insulator, the protective film covering a portion of each of the main body and the first electrode (11), and a portion of the second portion (111B) protrudes in the first direction (z) beyond the protective film. Supplementary Note 9. The semiconductor device (A10) according to Appendix 8 further includes an intermediate layer (50) that is an insulator, the intermediate layer including a portion sandwiched between the protective film (15) and the first terminal portion (112), and the intermediate layer being in contact with the second portion (111B). Appendix 10. The semiconductor device (A10) according to Appendix 9, wherein the intermediate layer (50) is in contact with the sealing resin (40). Appendix 11. The semiconductor device (A10) according to Appendix 9 or 10, wherein the first terminal portion (112) has an opening (112B) that penetrates in the first direction (z), and the control electrode (13) and the conductive member (30) each overlap the opening as viewed in the first direction (z). Appendix 12. The semiconductor device (A10) according to Appendix 11, wherein the control terminal (20) overlaps the opening (112B) as viewed in the first direction (z). Appendix 13. The semiconductor device (A10) according to Appendix 12, wherein a portion of the intermediate layer (50) is accommodated in the opening (112B). Appendix 14. The semiconductor device (A10) according to Appendix 13, wherein a dimension of the control terminal (20) is smaller than a dimension of the opening (112B) in a third direction (y) perpendicular to each of the first direction (z) and the second direction (x). Appendix 15. The semiconductor device (A10) according to Appendix 14, wherein the control terminal (20) is exposed from the second surface (42).Supplementary Note 16. The semiconductor device (A20) according to Supplementary Note 15, wherein the second electrode (12) has a second pad (121) and a second terminal portion (122) located on the opposite side of the second pad from the first electrode (11) and electrically connected to the second pad, and the second terminal portion is exposed from the second surface (42). Supplementary Note 17. The semiconductor device (A20) according to Supplementary Note 16, wherein the control terminal (20) is spaced from the main body (14) when viewed in the second direction (x). Supplementary Note 18. The semiconductor device (A30) according to Supplementary Note 17, wherein the sealing resin (40) has a fourth surface (44) facing the opposite side to the third surface (43) in the second direction (x), and the second terminal portion (122) is exposed from the fourth surface (44). Supplementary Note 19. The semiconductor device (A40) according to Appendix 14, wherein the control terminal (20) is exposed from the first surface (41). Appendix 20. A semiconductor module (B10, B20) comprising: the semiconductor device (A10) according to Appendix 12; and a substrate (70) including a first conductive portion (72), wherein the semiconductor device is mounted on the substrate, and either the first terminal portion (112) or the second electrode (12) is conductively joined to the first conductive portion. Appendix 21. The semiconductor device (A10) according to Appendix 2, wherein the conductive member (30) is a wire. Appendix 22. The semiconductor device (A10) according to Appendix 7, wherein the first terminal portion (112) and the second portion (111B) each contain the same metal element. Appendix 23. The semiconductor device (A10) according to Appendix 22, wherein the metal element is copper. Appendix 24. The semiconductor device (A10) according to Appendix 8, wherein the second portion (111B) is located inward from the periphery of the first portion (111A) when viewed in the first direction (z). Appendix 25. The semiconductor device (A10) according to Appendix 13, wherein the viscosity of the intermediate layer (50) in a fluid state is lower than the viscosity of the sealing resin (40) in a fluid state. Appendix 26. The semiconductor device (A10) according to Appendix 12, wherein at least a portion of the conductive member (30) is housed in the opening (112B). Appendix 27. The semiconductor device (A10) according to Appendix 15, wherein the control terminal (20) overlaps the main body (14) when viewed in the second direction (x).Supplementary Note 28. The semiconductor device (A20) according to Supplementary Note 17, wherein the dimension of the control terminal (20) in the first direction (z) is equal to the dimension of the second terminal portion (122) in the first direction. Supplementary Note 29. The semiconductor device (A40) according to Supplementary Note 19, wherein the control terminal (20) overlaps each of the main body (14), the first terminal portion (112), and the conductive member (30) when viewed in the second direction (x). Supplementary Note 30. The semiconductor device (A50) according to Supplementary Note 29, wherein the second electrode (12) has a second pad (121) and a second terminal portion (122) located on the opposite side of the second pad from the first electrode (11) and electrically connected to the second pad, the second terminal portion being exposed from the second surface (42), and the control terminal (20) being spaced apart from the second terminal portion when viewed in the second direction (x). Supplementary Note 31. The semiconductor device (A10) according to Appendix 12 further comprises a protective layer (60) covering each of the first terminal portion (112), the second electrode (12), and the control terminal (20) exposed from the sealing resin (40), wherein the protective layer contains a metal element and is exposed to the outside.

[0095] A10 to A60: semiconductor device B10 to B40: semiconductor module 10: semiconductor element 11: first electrode 111: first pad portion 111A, 111B: first portion, second portion 112: first terminal portion 112A: first exposed surface 112B: opening 12: second electrode 121: second pad portion 122: second terminal portion 122A: second exposed surface 122B: second end surface 13: control electrode 131, 132: third portion, fourth portion 14: main body 15: protective film 151, 152: first opening, second opening 19: bonding layer 20: control terminal 21, 22: first connecting surface, second connecting surface 23: first end surface 30: conductive member 40: sealing resin 41 to 44: first surface to fourth surface 50: Intermediate layer 60: Protective layer 70: Base material 71: Insulating substrate 72, 73: First conductive portion, second conductive portion 79: Bonding layer 81, 82: First conductive member, second conductive member z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a control terminal; a semiconductor element having a first electrode, a second electrode, and a control electrode; a conductive member conductively joined to the control terminal and the control electrode; and a sealing resin covering the control terminal, a portion of each of the semiconductor element, and the conductive member, wherein the first electrode has a first pad portion and a first terminal portion located on one side of the first pad portion in a first direction and electrically connected to the first pad portion, the sealing resin has a first surface and a second surface facing opposite to each other in the first direction, the first terminal portion being exposed from the first surface, the second electrode being exposed from the second surface, and the control terminal being exposed from either the first surface or the second surface.

2. The semiconductor device according to claim 1, wherein the conductive member overlaps the first terminal portion when viewed in a second direction perpendicular to the first direction.

3. The semiconductor device according to claim 2, wherein the sealing resin has a third surface facing one side of the second direction, and the control terminal is exposed from the third surface.

4. The semiconductor device according to claim 3, wherein the second electrode is located on the opposite side of the first electrode in the first direction, and the control electrode is located on the same side as the first electrode in the first direction.

5. The semiconductor device according to claim 4, wherein the dimension of said first terminal portion in said first direction is larger than the dimension of said first pad portion in said first direction.

6. The semiconductor device according to claim 5, wherein the semiconductor element has a body located between the first electrode and the second electrode in the first direction, the first electrode and the second electrode are electrically connected to the body, and the first terminal portion protrudes outward from the body when viewed in the first direction.

7. The semiconductor device described in claim 6, wherein the first pad portion has a first portion and a second portion located between the first portion and the first terminal portion and electrically connected to the first portion, the first terminal portion is electrically connected to the second portion, and the dimension of the second portion in the first direction is larger than the dimension of the first portion in the first direction.

8. The semiconductor device according to claim 7, wherein the semiconductor element is located on the opposite side of the main body from the second electrode and has a protective film that is an insulator, the protective film covering a portion of each of the main body and the first electrode, and a portion of the second portion protruding in the first direction beyond the protective film.

9. The semiconductor device according to claim 8, further comprising an intermediate layer made of an insulator, the intermediate layer including a portion sandwiched between the protective film and the first terminal portion, and the intermediate layer contacting the second portion.

10. The semiconductor device according to claim 9, wherein the intermediate layer is covered with the sealing resin.

11. A semiconductor device according to claim 9 or 10, wherein the first terminal portion has an opening penetrating in the first direction, and when viewed in the first direction, the control electrode and the conductive member each overlap the opening.

12. The semiconductor device according to claim 11, wherein the control terminal overlaps the opening when viewed in the first direction.

13. The semiconductor device according to claim 12, wherein a portion of the intermediate layer is accommodated in the opening.

14. The semiconductor device according to claim 13, wherein the dimension of said control terminal in a third direction perpendicular to each of said first direction and said second direction is smaller than the dimension of said opening.

15. The semiconductor device according to claim 14, wherein the control terminal is exposed from the second surface.

16. The semiconductor device according to claim 15, wherein the second electrode has a second pad and a second terminal portion located on the opposite side of the second pad from the first electrode and electrically connected to the second pad, and the second terminal portion is exposed from the second surface.

17. The semiconductor device according to claim 16, wherein the control terminal is spaced apart from the main body when viewed in the second direction.

18. The semiconductor device according to claim 17, wherein the sealing resin has a fourth surface facing the opposite side to the third surface in the second direction, and the second terminal portion is exposed from the fourth surface.

19. The semiconductor device according to claim 14, wherein the control terminal is exposed from the first surface.

20. A semiconductor module comprising: a semiconductor device according to claim 12; and a substrate including a first conductive portion, wherein the semiconductor device is mounted on the substrate, and either the first terminal portion or the second electrode is conductively joined to the first conductive portion.

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