Heating device and method for heating to-be-processed semiconductor substrate in laser annealing process, laser annealing device and method using same, and semiconductor device manufacturing device and method

Abstract

Disclosed are a heating device and method for heating a to-be-processed semiconductor substrate in a laser annealing process, a laser annealing device and method using same, and a semiconductor device manufacturing device and method. The heating device disclosed herein is for heating a to-be-processed semiconductor substrate in a laser annealing process by using a laser. The heating device may be configured to heat the to-be-processed semiconductor substrate loaded thereon and differently control the heating temperature according to the region of the to-be-processed semiconductor substrate. The heating device may be configured to control so that the temperature of a region having a relatively low laser energy density in the to-be-processed semiconductor substrate is higher than the temperature of a region having a relatively high laser energy density in the to-be-processed semiconductor substrate.

Description

Heating device and method for heating a semiconductor substrate to be processed in a laser annealing process, laser annealing device and method using the same, and semiconductor device manufacturing device and method

[0001] The present invention relates to a device and method related to semiconductor manufacturing, and more specifically, to a device and method for heating a processing object, a device and method for laser annealing, and a device and method for manufacturing a semiconductor element.

[0002] In general, semiconductor devices / electronic devices can be manufactured through multiple processes. For example, processes for manufacturing semiconductor devices / electronic devices can include thin film deposition processes, photolithography processes, etching processes, ion implantation processes, annealing (i.e., heat treatment) processes, etc. Among these, the annealing process can be a process for improving and securing the characteristics of the device by stabilizing, activating, melting a substrate or a thin film formed on the substrate, or removing seam defects within the thin film. The annealing (heat treatment) process can include a laser annealing process, a rapid thermal process (RTP), etc.

[0003] The laser annealing process uses a laser to heat treat only the surface of the workpiece (substrate), which has the advantages of minimal impact on other processes, reduced thermal damage, and relatively easy temperature increase and control. However, as the integration of semiconductor / electronic devices increases and the size of unit devices continues to decrease, the temperature non-uniformity that occurs on the workpiece during laser annealing can cause various problems in the manufacturing characteristics of the devices. Furthermore, due to the limitations of the laser optical system (light source), the laser beam size and energy density may vary depending on the distance to the workpiece after shaping the laser beam. This can cause undesirable temperature distribution (i.e., non-uniformity of the heat treatment temperature) on the workpiece during the laser annealing process, which can lead to problems such as deterioration of the performance and yield of semiconductor / electronic devices.

[0004] The technical problem to be achieved by the present invention is to provide a heating device and method capable of improving the uniformity of annealing (heat treatment) temperature when annealing a semiconductor processing object (i.e., a semiconductor processing substrate) with a laser.

[0005] In addition, the technical problem to be achieved by the present invention is to provide a laser annealing device and method using the above-described heating device and method.

[0006] In addition, the technical problem to be achieved by the present invention is to provide a semiconductor device manufacturing device and method using the above-described heating device and method.

[0007] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be understood by those skilled in the art from the description below.

[0008] According to one embodiment of the present invention, a heating device for heating a semiconductor processing substrate in a laser annealing process using a laser is provided, wherein the heating device heats the semiconductor processing substrate loaded thereon, and is configured to control a heating temperature differently depending on an area of ​​the semiconductor processing substrate, and is configured to control a temperature of an area in the semiconductor processing substrate where the energy density of the laser (hereinafter, laser energy density) is relatively low to be higher than a temperature of an area where the laser energy density is relatively high.

[0009] The above heating device can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (d1) and the laser absorption (a1) in the area where the laser energy density is relatively low and the laser energy density (d2) and the laser absorption (a2) in the area where the laser energy density is relatively high satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1.

[0010] The above heating device can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (D1) and laser absorption (A1) in the area where the laser energy density is the lowest and the laser energy density (D2) and laser absorption (A2) in the area where the laser energy density is the highest satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1.

[0011] The heating device may include a plurality of heating zones having different distances in a radial direction from the center thereof, and the heating temperatures of at least two of the plurality of heating zones may be different from each other.

[0012] The heating device may include a plurality of heating zones arranged parallel to each other in a second direction perpendicular to the first direction between the two ends along the first direction, and the heating temperatures of at least two of the plurality of heating zones may be different from each other.

[0013] The above plurality of heating zones may have a left-right symmetrical or up-down symmetrical heating temperature distribution when viewed from above.

[0014] The above plurality of heating zones may have a left-right asymmetric or up-down asymmetric heating temperature distribution when viewed from above.

[0015] The heating device may include a plurality of partial heating zones and a remaining heating zone excluding the plurality of partial heating zones, and a heating temperature of at least one of the plurality of partial heating zones may be controlled differently from a heating temperature of the remaining heating zones.

[0016] In the heating temperature distribution by the above heating device, the center temperature may be in the range of about 30℃ to 1000℃.

[0017] The difference between the lowest temperature and the highest temperature in the heating temperature distribution by the above heating device may be about 500°C or less.

[0018] According to another embodiment of the present invention, a laser annealing device is provided, including the above-described heating device; and a laser irradiation device that irradiates a laser for annealing to a semiconductor processing substrate loaded in the heating device.

[0019] The above laser irradiation device can be configured to irradiate a laser to the semiconductor processing substrate in a scanning manner or a stepper manner.

[0020] The above laser irradiation device may include a laser generator and a laser scanner for irradiating a laser generated from the laser generator to the semiconductor processing target substrate.

[0021] According to another embodiment of the present invention, a heating method for heating a semiconductor processing substrate in a laser annealing process using a laser is provided, the heating method including the step of heating the semiconductor processing substrate while controlling a heating temperature differently depending on an area of ​​the semiconductor processing substrate, and the step of controlling the heating temperature differently depending on an area of ​​the semiconductor processing substrate includes the step of controlling a temperature of an area of ​​the semiconductor processing substrate where the energy density of the laser (hereinafter, laser energy density) is relatively low to be higher than a temperature of an area where the laser energy density is relatively high.

[0022] The heating temperature can be controlled differently depending on the region of the semiconductor processing substrate so that the laser energy density (d1) and laser absorption (a1) in the region where the laser energy density is relatively low and the laser energy density (d2) and laser absorption (a2) in the region where the laser energy density is relatively high satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1.

[0023] The heating temperature can be controlled differently depending on the region of the semiconductor processing substrate so that the laser energy density (D1) and laser absorption (A1) in the region where the laser energy density is the lowest and the laser energy density (D2) and laser absorption (A2) in the region where the laser energy density is the highest satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1.

[0024] The step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate may include the step of defining a plurality of heating areas having different distances in a radial direction from the center of the semiconductor processing substrate, and the heating temperatures of at least two heating areas among the plurality of heating areas may be different from each other.

[0025] The step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate may include the step of defining a plurality of heating areas arranged parallel to each other in a second direction perpendicular to the first direction between both ends of the semiconductor processing substrate along the first direction, and the heating temperatures of at least two heating areas among the plurality of heating areas may be different from each other.

[0026] The step of controlling the heating temperature differently depending on the region of the semiconductor processing substrate may include the step of defining a plurality of partial heating regions and the remaining heating regions excluding the plurality of partial heating regions in the semiconductor processing substrate, and the heating temperature of at least one of the plurality of partial heating regions may be controlled differently from the heating temperature of the remaining heating regions.

[0027] According to another embodiment of the present invention, a laser annealing method is provided, comprising the steps of heating a semiconductor processing substrate using the aforementioned heating method; and irradiating a laser for annealing to the semiconductor processing substrate heated using the heating method.

[0028] According to embodiments of the present invention, when annealing a semiconductor processing object (i.e., a semiconductor processing substrate) with a laser, a heating device / method capable of improving the uniformity of annealing (heat treatment) temperature and a laser annealing device / method using the same can be implemented. For example, by controlling the heating temperature differently in a predetermined manner depending on the area of ​​the semiconductor processing object to compensate for the difference in laser energy density in the semiconductor processing object, the temperature distribution of the semiconductor processing object can be improved in laser annealing.

[0029] By using the heating device / method and the laser annealing device / method according to embodiments of the present invention, the performance and uniformity of semiconductor devices / electronic devices can be improved and the yield and productivity of products can be enhanced.

[0030] However, the effects of the present invention are not limited to the above effects, and can be expanded in various ways without departing from the technical spirit and scope of the present invention.

[0031] FIG. 1 is a perspective view illustrating a heating device for heating a semiconductor processing substrate in a laser annealing process using a laser according to one embodiment of the present invention.

[0032] FIG. 2 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to one embodiment of the present invention.

[0033] FIG. 3 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0034] Fig. 4 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0035] Fig. 5 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0036] Fig. 6 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0037] Fig. 7 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0038] FIG. 8 is a cross-sectional view illustrating a laser annealing device according to one embodiment of the present invention.

[0039] FIG. 9 is a perspective view illustrating a laser annealing device according to another embodiment of the present invention.

[0040] FIG. 10 is a perspective view illustrating a method for manufacturing a semiconductor device using a laser annealing device and method according to one embodiment of the present invention.

[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0042] The embodiments of the present invention described below are provided to more clearly explain the present invention to a person having ordinary skill in the art, and the scope of the present invention is not limited by the following embodiments, and the following embodiments can be modified in various other forms.

[0043] The terminology used herein is used to describe particular embodiments and is not intended to limit the present invention. The singular forms used herein may include the plural forms unless the context clearly dictates otherwise. In addition, the terms "comprise" and / or "comprising" used herein specify the presence of a stated feature, step, number, operation, element, element, and / or group thereof, but do not exclude the presence or addition of one or more other features, steps, numbers, operations, elements, elements, and / or groups thereof. In addition, the term "connected" used herein not only means that certain elements are directly connected, but also includes a concept that indirectly connects elements by interposing another element between them.

[0044] In addition, when it is said in this specification that a certain element is located "on" another element, this includes not only cases where a certain element is in contact with another element, but also cases where another element exists between the two elements. The term "and / or" as used in this specification includes any one of the listed items and any and all combinations of one or more of them. In addition, terms of degree such as "about", "substantially", etc. as used in this specification are used to mean a range of or close to the numerical value or degree, taking into account inherent manufacturing and material tolerances, and are used to prevent infringers from unfairly using the disclosure that mentions exact or absolute numbers provided to help the understanding of this specification.

[0045] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The sizes and thicknesses of areas or parts illustrated in the attached drawings may be somewhat exaggerated for clarity and convenience of explanation. Like reference numbers designate like components throughout the detailed description.

[0046] FIG. 1 is a perspective view illustrating a heating device (HT10) for heating a semiconductor processing substrate in a laser annealing process using a laser according to one embodiment of the present invention.

[0047] Referring to FIG. 1, a heating device (HT10) according to one embodiment of the present invention may be a device for heating a semiconductor processing target substrate (not shown) in a laser annealing process using a laser.

[0048] The semiconductor processing substrate may be, for example, a substrate or wafer on which semiconductor devices (electronic devices) such as transistors, contacts, capacitors, memory cell arrays, pixel arrays, or driving circuits are formed. The semiconductor processing substrate may include a semiconductor substrate or an insulating substrate, or in some cases, a conductive substrate. In addition, the semiconductor processing substrate may further include a predetermined thin film or a device portion including a thin film formed on a substrate (base substrate). The semiconductor substrate may include at least one of various semiconductor materials including, but not limited to, Si, Ge, SiGe, SiC, GaN, GaAs, etc. The thin film may include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film may include various semiconductor materials including amorphous silicon and polycrystalline silicon. The insulating thin film (insulator layer) may be composed of a ceramic material. The insulating thin film may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, a high-k material having a higher dielectric constant than silicon nitride, etc. The conductive thin film may include, for example, at least one of a metal and a metal compound. The element portion may include, but is not limited to, switching elements such as transistors or diodes, or memory elements such as storage nodes, capacitors, or resistance-changing layers. In addition, the semiconductor processing substrate may include a wafer or have a wafer shape.

[0049] The heating device (HT10) may be provided within the stage (ST10) on which the semiconductor processing substrate is loaded. That is, the stage (ST10) may be configured to include the heating device (HT10). The stage (ST10) may have an overall circular plate structure or a similar structure. In another embodiment, when the stage (ST10) has an inline structure, it may have a structure that extends in a predetermined direction to process semiconductor processing substrates that are continuously transported. The stage (ST10) may include the heating device (HT10) at its central portion, and may include a peripheral portion (P10) arranged to surround the heating device (HT10) around the heating device (HT10). The heating device (HT10), when viewed from above, may have a circular structure or a similar structure. In one embodiment, the upper surface of the heating device (HT10) may be recessed lower than the periphery (P10), and a semiconductor processing substrate (not shown) may be mounted on the upper surface of the recessed heating device (HT10). An insulating member (N10) may be disposed between the heating device (HT10) and the periphery (P10). In one embodiment, the insulating member (N10) may have a ring shape surrounding the heating device (HT10) when viewed from above. However, the specific configuration, structure, shape, etc. of the heating device (HT10) and the stage (ST10) including the same illustrated in FIG. 1 are merely exemplary and may vary in various ways depending on the case.

[0050] According to an embodiment of the present invention, the heating device (HT10) may be configured to heat the semiconductor processing substrate loaded thereon, but to control the heating temperature differently depending on the region of the semiconductor processing substrate. In other words, the heating device (HT10) may be configured to heat a plurality of regions of the semiconductor processing substrate at different temperatures. The heating device (HT10) may be configured to control the temperature of a region of the semiconductor processing substrate where the energy density of the laser (hereinafter, laser energy density) is relatively low to be higher than the temperature of a region where the laser energy density is relatively high.

[0051] Temperature non-uniformity in the semiconductor substrate (processing object) during laser annealing can cause various problems in the manufacturing characteristics of the device. Due to the limitations and imperfections of the laser optical system (light source unit), the laser beam size and energy density may vary depending on the distance to the semiconductor substrate after shaping the laser beam. For example, the laser beam size may increase and the energy density may decrease in the defocus region. The energy density and intensity characteristics of the irradiated laser may vary depending on the region of the semiconductor substrate to be processed. As a result, undesirable temperature distribution (i.e., non-uniformity of the heat treatment temperature) may occur in the semiconductor substrate to be processed during the laser annealing process, which may lead to problems such as performance degradation and yield reduction of semiconductor / electronic devices.

[0052] In an embodiment of the present invention, the heating device (HT10) may be configured to control the temperature of a region of the semiconductor processing substrate having a relatively low laser energy density to be higher than the temperature of a region of the semiconductor processing substrate having a relatively high laser energy density. Depending on the temperature of a predetermined region of the semiconductor processing substrate, laser absorption (i.e., laser beam absorption) may vary. Here, the laser absorption may refer to an absorption coefficient. The higher the temperature of the predetermined region of the semiconductor processing substrate, the higher the laser absorption. Therefore, by making the temperature of a region of the semiconductor processing substrate having a relatively low laser energy density higher than the temperature of a region of the semiconductor processing substrate having a relatively high laser energy density, the laser absorption in the region of the semiconductor processing substrate having a relatively low laser energy density can be increased and the temperature distribution can be improved. In other words, by controlling the heating temperature differently in a given manner depending on the region of the semiconductor processing substrate to compensate for the difference in laser energy density in the semiconductor processing substrate, the temperature distribution of the semiconductor processing substrate can be improved during laser annealing, and the uniformity of the annealing (heat treatment) temperature can be enhanced. According to this embodiment of the present invention, the performance and uniformity of semiconductor devices / electronic devices can be improved and the yield and productivity of products can be improved.

[0053] According to one embodiment, the heating device (HT10) can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (d1) and the laser absorption (a1) in an area where the laser energy density is relatively low and the laser energy density (d2) and the laser absorption (a2) in an area where the laser energy density is relatively high satisfy the mathematical equation -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1. In this case, the difference between the product of the laser energy density (d1) and the laser absorption (a1) and the product of the laser energy density (d2) and the laser absorption (a2) may be within about ±10% based on either of the two values. Alternatively, the heating device (HT10) may control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (d1) and the laser absorption (a1) and the laser energy density (d2) and the laser absorption (a2) satisfy the mathematical equation -0.05 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.05. In this case, the difference between the product of the laser energy density (d1) and the laser absorption (a1) and the product of the laser energy density (d2) and the laser absorption (a2) may be within about ±5% based on either of the two values. When this condition is satisfied, it may be advantageous to improve the uniformity of the annealing (heat treatment) temperature in the semiconductor processing substrate.

[0054] According to one embodiment, the heating device (HT10) can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (D1) and the laser absorption (A1) in the area where the laser energy density is the lowest and the laser energy density (D2) and the laser absorption (A2) in the area where the laser energy density is the highest satisfy the mathematical equation -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1. In this case, the difference between the product of the laser energy density (D1) and the laser absorption (A1) and the product of the laser energy density (D2) and the laser absorption (A2) may be within about ±10% based on either of the two values. Alternatively, the heating device (HT10) may control the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (D1) and the laser absorption (A1) and the laser energy density (D2) and the laser absorption (A2) satisfy the mathematical equation -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1. In this case, the difference between the product of the laser energy density (D1) and the laser absorption (A1) and the product of the laser energy density (D2) and the laser absorption (A2) may be within about ±5% based on either of the two values. When this condition is satisfied, it may be advantageous to improve the uniformity of the annealing (heat treatment) temperature in the semiconductor processing substrate.

[0055] According to one embodiment, the heating device (HT10) may be a heater using a coil. The heating device (HT10) may be configured to have different coil turns and densities depending on the region. The heating device (HT10) may be divided into a plurality of regions, and the number of coil turns and densities may be different in at least two regions among the plurality of regions. The heating temperature may vary depending on the number of coil turns and densities. In addition, in some cases, the heating device (HT10) may be divided into a plurality of regions, and the plurality of regions may be independently controlled (driven). The heating temperature of each region may vary depending on the amount of current or the density of current flowing through each region of the heating device (HT10). In other words, the heating temperature may vary depending on the amount of current or the density of current flowing through the coil of the corresponding region of the heating device (HT10). However, the specific heating configuration, heating principle, temperature control principle, etc. of the heating device (HT10) are not limited to the above-described and may vary in various ways.

[0056] FIG. 2 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to one embodiment of the present invention.

[0057] Referring to FIG. 2, the heating device (HT11) according to the present embodiment may include a plurality of heating zones (R11) that are spaced radially from the center thereof at different distances. Among the plurality of heating zones (R11), the heating zone (R11) located in the center may have a circular structure, and the remaining heating zones (R11) may have a ring-shaped structure. The (n+1)th heating zone (R11) may have a structure that surrounds the (n)th heating zone (R11). In addition, the (n-1)th heating zone (R11) may be located between the (n+1)th heating zone (R11) and the (n-1)th heating zone (R11).

[0058] The heating temperatures of at least two heating zones (R11) among the plurality of heating zones (R11) may be different from each other. The heating temperatures of all of the plurality of heating zones (R11) may be different from each other. Alternatively, the heating temperatures of some of the plurality of heating zones (R11) may be the same.

[0059] As a non-limiting example, the heating temperature of the heating zone (R11) may increase or have a tendency to increase as it moves from the center to the outside of the heating device (HT11). The heating device (HT11) may be referred to as a type of temperature gradient heater. However, the heating temperature distribution of the plurality of heating zones (R11) is not limited to the above-described temperature distribution and may vary as needed.

[0060] FIG. 3 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0061] Referring to FIG. 3, a heating device (HT12) according to the present embodiment may include a plurality of heating regions (R12) arranged parallel to each other in a second direction perpendicular to the first direction between its two ends in a first direction. Here, the first direction may be an X-axis direction, and the second direction may be a Y-axis direction. The plurality of heating regions (R12) may be arranged parallel to each other in the Y-axis direction, and may be arranged to contact each other in the X-axis direction. A heating region (R12) may be provided that crosses the central portion of the heating device (HT12) in the Y-axis direction, and the remaining heating regions (R12) may be arranged on both sides thereof.

[0062] Among the plurality of heating zones (R12), at least two heating zones (R12) may have different heating temperatures. Some of the plurality of heating zones (R12) may have the same heating temperature. According to one embodiment, the plurality of heating zones (R12) may have a left-right symmetrical heating temperature distribution when viewed from above. That is, the heating temperature distribution may be symmetrical on both sides of the heating zone (R12) that crosses the central portion of the heating device (HT12) in the Y-axis direction.

[0063] As a non-limiting example, the heating temperature of the heating zone (R12) may increase or have a tendency to increase as it moves from the center to the outside of the heating device (HT12). The heating device (HT12) may be referred to as a type of temperature gradient heater. However, the heating temperature distribution of the plurality of heating zones (R12) is not limited to the above-described temperature distribution and may vary as needed.

[0064] Fig. 4 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0065] Referring to FIG. 4, a heating device (HT13) according to the present embodiment may include a plurality of heating regions (R13) arranged parallel to each other in a second direction perpendicular to the first direction between its two ends in a first direction. Here, the first direction may be a Y-axis direction, and the second direction may be an X-axis direction. The plurality of heating regions (R13) may be arranged parallel to each other in the X-axis direction, and may be arranged to contact each other in the Y-axis direction. A heating region (R13) may be provided that crosses the central portion of the heating device (HT13) in the X-axis direction, and the remaining heating regions (R13) may be arranged on both sides thereof.

[0066] Among the plurality of heating zones (R13), at least two heating zones (R13) may have different heating temperatures. Some of the plurality of heating zones (R13) may have the same heating temperature. According to one embodiment, the plurality of heating zones (R13) may have an up-down symmetrical heating temperature distribution when viewed from above. That is, the heating temperature distribution may be symmetrical on both sides of the heating zone (R13) that crosses the central portion of the heating device (HT13) in the X-axis direction.

[0067] As a non-limiting example, the heating temperature of the heating zone (R13) may increase or have a tendency to increase as it moves from the center of the heating device (HT13) to the outside. The heating device (HT13) may be referred to as a type of temperature gradient heater. However, the heating temperature distribution of the plurality of heating zones (R13) is not limited to the above-described temperature distribution and may vary as needed.

[0068] Fig. 5 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0069] Referring to FIG. 5, a heating device (HT14) according to the present embodiment may include a plurality of heating zones (R14) having the same or similar arrangement as described in FIG. 3. At least two heating zones (R14) among the plurality of heating zones (R14) may have different heating temperatures. Some of the plurality of heating zones (R14) may have the same heating temperatures. The heating temperatures of the zones ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ indicated in the plurality of heating zones (R14) may be controlled in any manner. The heating temperatures of the zones ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ may be independently controlled. According to one embodiment, the plurality of heating zones (R14) may have a left-right asymmetrical heating temperature distribution when viewed from above.

[0070] Fig. 6 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0071] Referring to FIG. 6, a heating device (HT15) according to the present embodiment may include a plurality of heating zones (R15) having the same or similar arrangement as described in FIG. 4. At least two heating zones (R15) among the plurality of heating zones (R15) may have different heating temperatures. Some of the plurality of heating zones (R15) may have the same heating temperatures. The heating temperatures of the zones ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ indicated in the plurality of heating zones (R15) may be controlled in any manner. The heating temperatures of the zones ⓐ, ⓑ, ⓒ, ⓓ, ⓔ, ⓕ, and ⓖ may be independently controlled. According to one embodiment, the plurality of heating zones (R15) may have an up-down asymmetrical heating temperature distribution when viewed from above.

[0072] The number and size of the plurality of heating zones (R11 to R15) in each of FIGS. 2 to 6 are merely exemplary and may vary depending on the case.

[0073] Fig. 7 is a plan view for exemplarily explaining the configuration and heating temperature distribution of a heating device according to another embodiment of the present invention.

[0074] Referring to FIG. 7, the heating device (HT16) according to the present embodiment may include a plurality of partial heating regions (R16) and a remaining heating region (R26) excluding the partial heating regions. The plurality of partial heating regions (R16) may be arranged in any region of the heating device (HT16). The plurality of partial heating regions (R16) may be arranged spaced apart from each other or may be arranged adjacent to each other. The plurality of partial heating regions (R16) may have a circular, oval, polygonal, or any other shape.

[0075] The heating temperature of at least one of the plurality of partial heating regions (R16) can be controlled differently from the heating temperatures of the remaining heating regions (R26). The heating temperature of at least one of the plurality of partial heating regions (R16) can be higher or lower than the heating temperature of the remaining heating regions (R26). The heating temperatures of at least two of the plurality of partial heating regions (R16) can be different from or the same. The number, size, shape, arrangement (position), etc. of the plurality of partial heating regions (R16) illustrated in FIG. 7 are merely exemplary and may vary depending on the case.

[0076] Although multiple heating zones and heating temperature distributions applicable to a heating device have been exemplarily illustrated and described with reference to FIGS. 2 through 7, the embodiments of the present invention are not limited thereto and may vary. In some cases, at least two of the embodiments described with reference to FIGS. 2 through 7 may be mixed in an appropriate manner. For example, a portion of one of the embodiments of FIGS. 2 through 7 may be mixed with a portion of another.

[0077] According to one embodiment of the present invention, the center temperature in the heating temperature distribution by the heating device may be in the range of about 30°C to 1000°C. For example, the center temperature in the heating temperature distribution by the heating device may be in the range of about 50°C to 700°C. The center temperature may be an average temperature in the heating temperature distribution. Among the plurality of heating regions included in the heating device, some regions may not be heated in the laser annealing process and may be maintained at room temperature (e.g., 25°C).

[0078] According to one embodiment of the present invention, the difference between the lowest temperature and the highest temperature in the heating temperature distribution by the heating device may be about 500°C or less. For example, the difference between the lowest temperature and the highest temperature in the heating temperature distribution by the heating device may be about 400°C or less or about 300°C or less. The difference between the lowest temperature and the highest temperature in the heating temperature distribution by the heating device may be greater than 0°C.

[0079] According to an embodiment of the present invention, a laser annealing device may be provided, including a heating device and a laser irradiation device for irradiating a laser for annealing to a semiconductor processing substrate loaded on the heating device. Here, the heating device is according to an embodiment of the present invention and may have characteristics and configurations as described with reference to FIGS. 1 to 7, for example. The laser irradiation device may be configured to irradiate a laser to the semiconductor processing substrate in a scanning manner or a stepper manner. When the laser irradiation device is a scanning-type device, the laser irradiation device may include a laser generator and a laser scanner for irradiating a laser generated from the laser generator to the semiconductor processing substrate. In addition, when the laser irradiation device is a scanning-type device, the laser irradiation device may be configured to scan the semiconductor processing substrate with a laser in a vector scan manner or a raster scan manner.

[0080] The laser used in the embodiments of the present invention may be, for example, any one of ultraviolet ray, visible ray, infrared ray, and microwave. The laser may be, but is not limited to, a laser (laser beam) generated from any one of a YAG (yttrium aluminum garnet) laser generator, a CO2 laser generator, a diode laser generator, and a fiber laser generator. The wavelength of the laser may be, for example, about 0.01 μm to 11 μm. However, the specific type and wavelength range of the laser are exemplary and may vary depending on the case. Meanwhile, the laser (laser beam) irradiated onto the semiconductor substrate to be processed may have a spot shape or a line shape on the surface of the semiconductor substrate to be processed.

[0081] FIG. 8 is a cross-sectional view illustrating a laser annealing device according to one embodiment of the present invention.

[0082] Referring to FIG. 8, a laser annealing device according to one embodiment of the present invention may include a laser generator (10) and a laser scanner, and the laser scanner may include a polygon mirror (20) and an optical system (30). In this case, the laser scanner may be a polygon scanner.

[0083] A laser (laser beam) (L1) generated from a laser generator (10) can be irradiated to a semiconductor processing substrate (S10) via a polygon mirror (20) and an optical system (30). The semiconductor processing substrate (S10) can be loaded (placed) on a heating device (110). The heating device (110) is according to an embodiment of the present invention and can have the characteristics and configuration as described with reference to FIGS. 1 to 7, for example. The heating device (110) can be provided within the stage (210) or coupled with the stage (210). As the polygon mirror (20) rotates, scanning of the laser (L1) can be performed. If necessary, the position of the stage (210) can be moved. However, the configuration of the laser annealing device described with reference to FIG. 8 is merely exemplary and can be modified in various ways.

[0084] FIG. 9 is a perspective view illustrating a laser annealing device according to another embodiment of the present invention.

[0085] Referring to FIG. 9, the laser annealing device according to the present embodiment may include a laser generator (15) and a laser scanner, and the laser scanner may include a first driving unit (25), a first mirror (35), a second driving unit (45), a second mirror (55), and an optical system (65). In this case, the laser scanner may be a galvanometer scanner.

[0086] The first mirror (35) is connected to the first driving unit (25) and can be rotated by the first driving unit (25). The first mirror (35) can be rotated about a first axis. The second mirror (55) is connected to the second driving unit (45) and can be rotated by the second driving unit (45). The second mirror (55) can be rotated about a second axis. The second axis can be perpendicular to the first axis. The first driving unit (25) can include a first motor, and the second driving unit (45) can include a second motor. The first driving unit (25) can be a first galvanometer, and the second driving unit (45) can be a second galvanometer.

[0087] A laser (laser beam) (L1) generated from a laser generator (15) can be irradiated onto a semiconductor processing substrate (S20) via a first mirror (35), a second mirror (55), and an optical system (65). The semiconductor processing substrate (S20) can be loaded (placed) on a heating device (not shown). The heating device is according to an embodiment of the present invention and may have, for example, the characteristics and configuration described with reference to FIGS. 1 to 7. The heating device may be provided within the stage (220) or coupled with the stage (220). As the first mirror (35) and the second mirror (55) rotate, scanning of the laser (L1) can be performed. If necessary, the position of the stage (220) can be moved. However, the configuration of the laser annealing device described with reference to FIG. 9 is merely exemplary and may be modified in various ways. In addition, although a scanning type laser annealing device is exemplarily illustrated and described in FIGS. 8 and 9, the embodiment of the present invention is not limited thereto and may be modified in various ways.

[0088] According to an embodiment of the present invention, a heating method for heating a semiconductor processing substrate in a laser annealing process using a laser is provided, the heating method including the step of heating the semiconductor processing substrate while controlling a heating temperature differently depending on an area of ​​the semiconductor processing substrate, and the step of controlling the heating temperature differently depending on an area of ​​the semiconductor processing substrate includes the step of controlling a temperature of an area of ​​the semiconductor processing substrate where the energy density of the laser (hereinafter, laser energy density) is relatively low to be higher than a temperature of an area where the laser energy density is relatively high.

[0089] According to one embodiment, the heating method can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate such that the laser energy density (d1) and the laser absorption (a1) in an area where the laser energy density is relatively low and the laser energy density (d2) and the laser absorption (a2) in an area where the laser energy density is relatively high satisfy the mathematical expression -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.1. The heating method can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate such that the laser energy density (d1) and the laser absorption (a1) and the laser energy density (d2) and the laser absorption (a2) satisfy the mathematical expression -0.05 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.05.

[0090] According to one embodiment, the heating method can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate such that the laser energy density (D1) and the laser absorption (A1) in the area where the laser energy density is the lowest and the laser energy density (D2) and the laser absorption (A2) in the area where the laser energy density is the highest satisfy the mathematical expression -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.1. The heating method can control the heating temperature differently depending on the area of ​​the semiconductor processing substrate such that the laser energy density (D1) and the laser absorption (A1) and the laser energy density (D2) and the laser absorption (A2) satisfy the mathematical expression -0.05 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.05.

[0091] According to one embodiment, the step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate may include the step of defining a plurality of heating areas having different distances in a radial direction from the center of the semiconductor processing substrate, and the heating temperatures of at least two of the plurality of heating areas may be different from each other. This may be the same as described with reference to FIG. 2.

[0092] According to one embodiment, the step of controlling the heating temperature differently depending on the region of the semiconductor processing substrate may include the step of defining a plurality of heating regions arranged parallel to each other in a second direction perpendicular to the first direction between both ends of the semiconductor processing substrate along the first direction, and the heating temperatures of at least two heating regions among the plurality of heating regions may be different from each other. This may be the same as described with reference to FIGS. 3 to 6.

[0093] According to one embodiment, the step of controlling the heating temperature differently depending on the region of the semiconductor processing substrate may include the step of defining a plurality of partial heating regions and the remaining heating regions excluding the plurality of partial heating regions in the semiconductor processing substrate, and the heating temperature of at least one of the plurality of partial heating regions may be controlled differently from the heating temperature of the remaining heating regions. This may be the same as described with reference to FIG. 7.

[0094] In addition, all features and modifications described with reference to FIGS. 1 to 7 may be applied to the heating method according to the above embodiment.

[0095] According to an embodiment of the present invention, a laser annealing method is provided, comprising the steps of heating a semiconductor processing substrate using the above-described heating method and irradiating a laser for annealing to the semiconductor processing substrate heated using the above-described heating method. Features of a laser annealing device according to an embodiment of the present invention can be applied to the laser annealing method.

[0096] FIG. 10 is a perspective view illustrating a method for manufacturing a semiconductor device using a laser annealing device and method according to one embodiment of the present invention.

[0097] Referring to FIG. 10, a plurality of devices (D10) can be formed from an annealed substrate structure (S100). The plurality of devices (D10) may be semiconductor devices (electronic devices). The devices (D10) may be memory devices or non-memory devices.

[0098] According to the embodiments of the present invention described above, when annealing a semiconductor processing object (i.e., a semiconductor processing substrate) with a laser, a heating device / method capable of improving the uniformity of the annealing (heat treatment) temperature and a laser annealing device / method applying the same can be implemented. For example, by controlling the heating temperature differently in a predetermined manner depending on the area of ​​the semiconductor processing object to compensate for the difference in laser energy density in the semiconductor processing object, the temperature distribution of the semiconductor processing object can be improved in the laser annealing. By using the heating device / method and the laser annealing device / method according to the embodiments of the present invention, the performance and uniformity of semiconductor devices / electronic devices can be improved, and the yield and productivity of products can be improved.

[0099] In this specification, preferred embodiments of the present invention have been disclosed, and although specific terms have been used, they have been used in a general sense only to easily explain the technical contents of the present invention and to help the understanding of the invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of ​​the present invention can be implemented in addition to the embodiments disclosed herein. Those skilled in the art will appreciate that the heating device and method for heating a semiconductor processing substrate in a laser annealing process according to the embodiments described with reference to FIGS. 1 to 10, the laser annealing device and method applying the same, and the semiconductor device manufacturing device and method can be variously substituted, changed, and modified without departing from the technical idea of ​​the present invention. Therefore, the scope of the invention should not be defined by the described embodiments, but by the technical idea described in the claims.

[0100] Embodiments of the present invention can be applied to a heating device and method for heating a semiconductor substrate to be processed in a laser annealing process. Furthermore, the present invention can be applied to a laser annealing device and method employing a heating device, and to a semiconductor device manufacturing device and method.

Claims

1. A heating device for heating a semiconductor processing substrate in a laser annealing process using a laser, A heating device for heating a semiconductor processing substrate in a laser annealing process, wherein the heating device is configured to heat the semiconductor processing substrate loaded thereon, and to control the heating temperature differently depending on the area of ​​the semiconductor processing substrate, and to control the temperature of an area where the energy density of the laser (hereinafter, laser energy density) is relatively low in the semiconductor processing substrate to be higher than the temperature of an area where the laser energy density is relatively high.

2. In paragraph 1, The above heating device is a heating device that controls the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (d1) and laser absorption (a1) in the area where the laser energy density is relatively low and the laser energy density (d2) and laser absorption (a2) in the area where the laser energy density is relatively high satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.

1.

3. In paragraph 1, The above heating device is a heating device that controls the heating temperature differently depending on the area of ​​the semiconductor processing substrate so that the laser energy density (D1) and laser absorption (A1) in the area where the laser energy density is the lowest and the laser energy density (D2) and laser absorption (A2) in the area where the laser energy density is the highest satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.

1.

4. In paragraph 1, The heating device includes a plurality of heating zones having different distances in a radial direction from its center, A heating device in which at least two heating zones among the plurality of heating zones have different heating temperatures.

5. In paragraph 1, The heating device comprises a plurality of heating zones arranged parallel to each other in a second direction perpendicular to the first direction between the two ends along the first direction, A heating device in which at least two heating zones among the plurality of heating zones have different heating temperatures.

6. In paragraph 5, The above-mentioned plurality of heating zones are heating devices having a left-right symmetrical or up-down symmetrical heating temperature distribution when viewed from above.

7. In paragraph 5, The above-mentioned plurality of heating zones are heating devices having a left-right asymmetrical or up-down asymmetrical heating temperature distribution when viewed from above.

8. In paragraph 1, The above heating device includes a plurality of partial heating zones and a remaining heating zone excluding these, A heating device in which the heating temperature of at least one of the plurality of partial heating zones is controlled differently from the heating temperatures of the remaining heating zones.

9. In paragraph 1, A heating device having a central temperature in the range of 30℃ to 1000℃ in the heating temperature distribution by the above heating device.

10. In paragraph 1, A heating device in which the difference between the lowest temperature and the highest temperature in the heating temperature distribution by the above heating device is 500℃ or less.

11. A heating device as described in any one of claims 1 to 10; and A laser annealing device including a laser irradiation device that irradiates a laser for annealing to a semiconductor processing substrate loaded in the above heating device.

12. In paragraph 11, The above laser irradiation device is a laser annealing device configured to irradiate a laser to the semiconductor processing substrate in a scanning manner or a stepper manner.

13. In paragraph 11, The laser irradiation device is a laser annealing device including a laser generator and a laser scanner for irradiating a laser generated from the laser generator to the semiconductor processing target substrate.

14. A heating method for heating a semiconductor processing substrate in a laser annealing process using a laser, A step of heating the semiconductor processing substrate and controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate, A heating method for heating a semiconductor processing substrate in a laser annealing process, wherein the step of controlling the heating temperature differently depending on the region of the semiconductor processing substrate includes the step of controlling the temperature of a region of the semiconductor processing substrate where the energy density of the laser (hereinafter, laser energy density) is relatively low to be higher than the temperature of a region where the laser energy density is relatively high.

15. In paragraph 14, A heating method for controlling a heating temperature differently depending on an area of ​​the semiconductor processing substrate so that the laser energy density (d1) and laser absorption (a1) in an area where the laser energy density is relatively low and the laser energy density (d2) and laser absorption (a2) in an area where the laser energy density is relatively high satisfy the mathematical formula -0.1 < [(d2×a2)-(d1×a1)] / (d2×a2) < 0.

1.

16. In paragraph 14, A heating method for controlling a heating temperature differently depending on an area of ​​the semiconductor processing substrate so that the laser energy density (D1) and laser absorption (A1) in an area where the laser energy density is the lowest and the laser energy density (D2) and laser absorption (A2) in an area where the laser energy density is the highest satisfy the mathematical formula -0.1 < [(D2×A2)-(D1×A1)] / (D2×A2) < 0.

1.

17. In paragraph 14, The step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate includes the step of defining a plurality of heating areas having different distances in the radial direction from the center of the semiconductor processing substrate. A heating method in which the heating temperatures of at least two heating zones among the plurality of heating zones are different from each other.

18. In paragraph 14, The step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate includes the step of defining a plurality of heating areas arranged parallel to each other in a second direction perpendicular to the first direction between both ends of the semiconductor processing substrate along the first direction, A heating method in which the heating temperatures of at least two heating zones among the plurality of heating zones are different from each other.

19. In paragraph 14, The step of controlling the heating temperature differently depending on the area of ​​the semiconductor processing substrate includes the step of defining a plurality of partial heating areas and the remaining heating areas excluding these in the semiconductor processing substrate, A heating method in which the heating temperature of at least one of the plurality of partial heating zones is controlled differently from the heating temperatures of the remaining heating zones.

20. A step of heating a semiconductor processing substrate using a heating method as described in any one of claims 14 to 19; and A laser annealing method comprising a step of irradiating a laser for annealing onto the semiconductor processing substrate heated by the above heating method.

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