Substrate processing apparatus and method

Abstract

A substrate processing apparatus according to an embodiment of the present invention may comprise: a process chamber that provides a process processing space for a process involving a substrate; a shower head that includes a plurality of spray holes and sprays process gas via the plurality of spray holes; a plasma generation unit that is disposed below the shower head, includes a plurality of through-holes for forming an electric field by means of supplied RF power, and plasma-converts the process gas, supplied from the shower head, into a process material in a plasma state; and a control unit for controlling a thin film deposition process on the substrate. The thin film deposition process includes at least one of a suppression process for suppressing deposition of a thin film at an entrance of a gap formed in the substrate or a modification process for enhancing the density of a thin film deposited on the substrate. The control unit repeats at least one of the suppression process or the modification process with reference to a preset gap-fill condition.

Description

Substrate processing device and method

[0001] The present invention relates to a substrate processing device and method, and more particularly, to a substrate processing device and method that converts process gas diffused by a showerhead into plasma using a hollow cathode plasma (HCP) method.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] Thin films can also be used to form interlayer insulating films. However, if the gaps between wires are small, proper thin film formation may not occur due to the deposition material not easily penetrating the gaps. For example, if the gap entrance is narrow, the film material formed around the entrance may prevent the deposition material from penetrating into the gap, resulting in the formation of a void.

[0005] Therefore, there is a need for an invention that enables the gap to be filled by allowing the deposition material to penetrate into the inside of the gap.

[0006] The problem to be solved by the present invention is to provide a substrate processing device and method that converts process gas diffused by a showerhead into plasma using a hollow cathode plasma (HCP) method.

[0007] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] In order to achieve the above object, a substrate processing device according to an embodiment of the present invention includes a process chamber that provides a process processing space for a process of a substrate, a showerhead including a plurality of injection holes and injecting a process gas through the plurality of injection holes, a plasma generating unit that is disposed below the showerhead and includes a plurality of through holes that form an electric field by supplied RF power and converts the process gas supplied from the showerhead into a process material in a plasma state, and a control unit that controls a thin film deposition process for the substrate, wherein the thin film deposition process includes at least one of a suppression process that suppresses a thin film from being deposited at an entrance of a gap formed in the substrate, and a modification process that improves the density of a thin film deposited on the substrate, and the control unit repeats at least one of the suppression process and the modification process with reference to a gap-fill condition set in advance.

[0009] The showerhead and the plasma generating unit each include a first diffusion space and a second diffusion space for diffusion of process gas.

[0010] The above control unit repeats the above suppression process and the above modification process individually or integratedly.

[0011] The above modification process is performed after the above suppression process.

[0012] The above gap fill conditions include the number of process cycles in which the gap of a pre-processed substrate is filled.

[0013] The above thin film deposition process further includes a reaction process in which a process material for a reaction gas reacts with a source gas deposited on the substrate to form a thin film, and the control unit repeats the reaction process with reference to the gap fill condition.

[0014] The reaction gas used in the above reaction process, the suppression gas used in the suppression process, and the modifying gas used in the modifying process are converted into plasma by the plasma generator into process materials in a plasma state and supplied to the substrate.

[0015] The above reaction gas includes at least one of ammonia (NH3) and oxygen (O2), the above suppression gas includes at least one of hydrogen (H2) and ammonia (NH3), and the above reforming gas includes at least one of argon (Ar) and hydrogen (H2).

[0016] The process material for the above suppressing gas has a lower density than the process material for the above reacting gas.

[0017] The above plasma generating unit converts process gas into process material in a plasma state using a hollow cathode plasma (HCP) method.

[0018] Whether the above gap fill condition is satisfied is determined by referring to the ratio of the depth of the gap formed on the substrate and the thickness of the thin film formed in the gap.

[0019] A substrate processing method according to an embodiment of the present invention includes a step of injecting a source gas to perform a source process, a step of injecting a reaction gas to perform a reaction process, a step of injecting a suppression gas to perform a suppression process, a step of injecting a modification gas to perform a modification process, and a step of determining whether a gap-fill condition is satisfied, wherein the source gas, the reaction gas, the suppression gas, and the modification gas are diffused in a first diffusion space and then diffused in a second diffusion space, and the reaction gas, the suppression gas, and the modification gas are converted into plasma into a process material in a plasma state by passing through a plurality of through holes that form an electric field by supplied RF power after being diffused in the second diffusion space, and at least one of the suppression process and the modification process is repeated depending on whether the gap-fill condition is satisfied.

[0020] The above suppression process and the above modification process are repeated individually or integratedly.

[0021] The above modification process is placed after the above suppression process.

[0022] The above gap fill conditions include the number of process cycles in which the gap of a pre-processed substrate is filled.

[0023] The above reaction process includes a process in which a process material for the reaction gas reacts with a source gas distributed on the substrate to form a thin film, and the reaction process is repeated with reference to the gap fill conditions.

[0024] The above reaction gas, the suppression gas, and the reforming gas are converted into process materials in a plasma state using a hollow cathode plasma (HCP) method.

[0025] The process material for the above suppressing gas has a lower density than the process material for the above reacting gas.

[0026] The above substrate processing method further includes a step of forming a thin film on the substrate by reacting a process material for the reaction gas with the source gas after the source gas is distributed on the substrate, the suppression process includes a process of suppressing the thin film from being deposited at the entrance of a gap formed on the substrate, and the modification process includes a process of improving the density of the thin film deposited on the substrate.

[0027] Whether the above gap fill condition is satisfied is determined by referring to the ratio of the depth of the gap formed on the substrate and the thickness of the thin film formed in the gap.

[0028] Specific details of other embodiments are included in the detailed description and drawings.

[0029] According to the substrate processing device and method of the present invention as described above, the process gas diffused by the showerhead is converted into plasma using the hollow cathode plasma (HCP) method, so there is an advantage in that the diffusion efficiency of the process gas and the plasma conversion efficiency are improved.

[0030] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0031] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0032] Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

[0033] Figure 3 is a plan view of the shower head.

[0034] Figure 4 is a drawing for explaining the arrangement relationship between the spray holes of the shower head and the plasma generating unit.

[0035] Figure 5 is a drawing for explaining the arrangement relationship between the shower head and the gas supply line.

[0036] Figure 6 is a drawing for explaining the deposition pattern of a thin film.

[0037] Figure 7 is a drawing for explaining the process cycle.

[0038] Figure 8 is a drawing showing a gap formed in the substrate.

[0039] Figure 9 is a drawing showing the distribution of source gas on the substrate.

[0040] Figure 10 is a drawing showing a thin film being deposited on a substrate.

[0041] Figure 11 is a drawing showing the distribution of the third process material on the substrate.

[0042] Figure 12 is a drawing showing a thin film being deposited on a substrate on which a third process material is distributed.

[0043] Figure 13 is a drawing for explaining the process of depositing a thin film on a substrate.

[0044] Figure 14 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0045] Figure 15 is a drawing for explaining gap fill conditions.

[0046] Figure 16 is a drawing to explain that the reaction process is repeated individually.

[0047] Figure 17 is a drawing to explain that the suppression process is repeated individually.

[0048] Figure 18 is a drawing to explain that the modification process is repeated individually.

[0049] Figure 19 is a drawing for explaining that the reaction process, inhibition process, and reforming process are repeated in an integrated manner.

[0050] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0051] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0052] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support part moved into a process processing space.

[0053] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas pressurization unit (500), a showerhead (600), a plasma generation unit (700), a power supply unit (800), and a control unit (900).

[0054] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). For example, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced atomic layer deposition (PEALD). In the present invention, the thin film deposited on the substrate (W) may be a silicon oxide film.

[0055] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) provides a space for accommodating various components for processing a substrate (W), and the chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a showerhead (600) and a plasma generator (700). For example, the showerhead (600) and the plasma generator (700) may be stacked and provided on the chamber lid (120).

[0056] The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for processing a substrate (W), and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space may correspond to the process processing space (SP1), and a lower space may correspond to the substrate placement space (SP2).

[0057] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0058] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0059] The substrate support (200) may have a mounting surface on which a substrate (W) can be mounted. A process may be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) may heat the substrate (W). For this purpose, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater may be transferred to the substrate (W) through the body of the substrate support (200).

[0060] The substrate support (200) can be raised to a process processing space (SP1) where a process for the substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating unit (300) can generate a driving force to move the substrate support (200) in the up and down direction. Fig. 1 illustrates the substrate support (200) being lowered to the substrate placement space (SP2), and Fig. 2 illustrates the substrate support (200) being raised to the process processing space (SP1).

[0061] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the showerhead (600). To this end, the gas supply unit (400) can be connected to the showerhead (600) via a gas supply line (410). The gas supply line (410) can provide a transport path for the process gas supplied to the showerhead (600).

[0062] The gas pressurization unit (500) can pressurize the process gas and supply it to the gas supply unit (400). A plurality of gas transfer lines (510) can be connected to the gas pressurization unit (500). Different process gases can be transported through the plurality of gas transfer lines (510). The gas pressurization unit (500) can individually pressurize the process gases transported through the plurality of gas transfer lines (510) and supply them to the gas supply unit (400). The process gas can be injected into the gas supply unit (400) at a predetermined pressure. Accordingly, the gas supply unit (400) can supply the process gas to the showerhead (600) at a uniform pressure.

[0063] The gas pressurization unit (500) may include a gas pressurization tank (520). A plurality of gas pressurization tanks (520) may be provided. For example, a gas pressurization tank (520) may be provided for each of a plurality of gas transfer lines (510). The gas pressurization tank (520) may pressurize and discharge process gas injected through the gas transfer line (510).

[0064] The showerhead (600) serves to supply the process gas supplied from the gas supply unit (400) to the plasma generation unit (700). The showerhead (600) can diffuse the process gas and supply the diffused process gas to the plasma generation unit (700). The showerhead (600) includes a plurality of injection holes (640) and can spray the process gas through the plurality of injection holes (640). The sprayed process gas can be supplied to the plasma generation unit (700).

[0065] In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, a reaction purge gas, a suppression gas, a suppression purge gas, a reforming gas, and a reforming purge gas. The source gas, the source purge gas, the reaction gas, the reaction purge gas, the suppression gas, the suppression purge gas, the reforming gas, and the reforming purge gas may be sequentially supplied from the showerhead (600), or at least some of them may be supplied simultaneously.

[0066] As described above, the thin film deposited on the substrate (W) may be a silicon oxide film. Accordingly, the source gas used for the deposition of the thin film in the present invention may include a silicon precursor. For example, the source gas may include at least one of hexachlorodisilane (HCDS), diiodosilane (DIS), diisoprophylaminosilane (DIPAS), trisdimethylaminosilane (TDMAS), bistertiarybutylaminosilane (BTBAS), and bisdiethylaminosilane (BDEAS). The reaction gas used for the deposition of the thin film may include at least one of ammonia (NH3) and oxygen (O2). The suppression gas used for suppressing the deposition of the thin film may include at least one of hydrogen (H2) and ammonia (NH3). The modifying gas used to improve the density of the thin film may include at least one of argon (Ar) and hydrogen (H2). The source purge gas, the reaction purge gas, the suppression purge gas, and the modifying purge gas may include nitrogen (N2).

[0067] The showerhead (600) may include a back plate (610) and a spray plate (620). The back plate (610) may be connected to a gas supply line (410). Process gas supplied through the gas supply line (410) may be supplied into the interior of the showerhead (600) through a supply hole formed in the back plate (610).

[0068] A plurality of injection holes (640) may be formed in the injection plate (620). The showerhead (600) may inject a process gas through the plurality of injection holes (640). The showerhead (600) may include a first diffusion space (630) for diffusion of the process gas. The first diffusion space (630) may be formed between the back plate (610) and the injection plate (620). The process gas supplied through the gas supply unit (400) may be diffused in the first diffusion space (630). The diffused process gas may be injected from the plurality of injection holes (640) and supplied to the plasma generation unit (700).

[0069] The plasma generating unit (700) may be disposed on the lower side of the showerhead (600). In addition, the plasma generating unit (700) includes a plurality of through holes (740) that form an electric field by the supplied RF power, and may convert the process gas supplied from the showerhead (600) into a process material in a plasma state. The plasma generating unit (700) may convert the process gas into a plasma state using a hollow cathode plasma (HCP) method. The process material generated by the process gas being converted into plasma may include radicals, ions, and electrons.

[0070] The plasma generating unit (700) may include a plasma generating body (710) and a plasma generating plate (720). One side of the plasma generating body (710) may be coupled to a showerhead (600). The plasma generating body (710) and the showerhead (600) may be insulated by an insulator. The other side of the plasma generating body (710) that is not coupled to the showerhead (600) may be coupled to a chamber lid (120). The plasma generating body (710) and the chamber lid (120) may be insulated by an insulator.

[0071] A plurality of through holes (740) may be formed in the plasma generating plate (720). The plurality of through holes (740) may form an electric field by the supplied RF power. By the electric field, the process gas passing through the through holes (740) may be converted into a process material in a plasma state.

[0072] The plasma generation unit (700) may include a second diffusion space (730) for diffusion of the process gas. The second diffusion space (730) may be formed between the spray plate (620) of the showerhead (600) and the plasma generation plate (720) of the plasma generation unit (700). The process gas supplied through the showerhead (600) may be diffused in the second diffusion space (730). The diffused process gas may be converted into plasma while passing through a plurality of through holes (740) and supplied into the interior of the process chamber (100). Since the process gas diffused in the first diffusion space (630) is additionally diffused and converted into plasma in the second diffusion space (730), the process material may be supplied to the substrate (W) over a wider range, and the quality of the thin film deposited on the substrate (W) may be improved.

[0073] The power supply unit (800) can supply RF power to the plasma generation unit (700). When RF power is supplied to the plasma generation unit (700), an electric field is formed in the through hole (740), and the process gas passing through the through hole (740) can be converted into a plasma state.

[0074] Plasma conversion by the plasma generator (700) can be selectively performed. When the power supply unit (800) supplies RF power to the plasma generator (700), the plasma generator (700) converts the process gas into plasma, and when the power supply unit (800) does not supply RF power to the plasma generator (700), the plasma generator (700) may not convert the process gas into plasma. As a result, the plasma generator (700) can selectively supply the process gas or the process material to the process chamber (100).

[0075] The process gas and process material supplied to the process chamber (100) can be used to form a thin film. After the source gas is distributed to the substrate (W), a thin film can be formed as the process material for the reaction gas reacts with the source gas.

[0076] The process chamber (100) may be equipped with a gas port (150). The gas port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the gas port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the gas port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the gas port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the process processing space (SP1), the gas port (150) may be disposed in an area between the substrate support (200) and the showerhead (600). Hereinafter, the gas port (150) disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0077] The gas port (150) may provide a discharge path for process byproducts. Here, the process byproducts may include all materials that must be discharged from the process chamber (100), such as process gases supplied to the process chamber (100) or remaining gases that are not used in forming a thin film among the process materials. For example, the process byproducts may include source gases, reaction gases, suppression gases, reforming gases, source purge gases, reaction purge gases, suppression purge gases, reforming purge gases, and process materials for the process gases.

[0078] An exhaust line (160) may be connected to the gas port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the gas port (150). A pressure pump (170) may be provided in the exhaust line (160). The pressure pump (170) may pressurize the internal space of the exhaust line (160) so that the process byproducts introduced into the gas port (150) may be transported through the exhaust line (160). The process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0079] The control unit (900) can perform overall control of the substrate processing device (10). For example, the control unit (900) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (900) can control the gas supply unit (400) to supply the process gas to the showerhead (600). By the control of the control unit (900), at least one process gas selected from among the source gas, the source purge gas, the reaction gas, the reaction purge gas, the suppression gas, the suppression purge gas, the reforming gas, and the reforming purge gas can be supplied to the showerhead (600). In addition, the control unit (900) can also control the supply of RF power by the power supply unit (800).

[0080] In addition, the control unit (900) can control a thin film deposition process for the substrate (W). The thin film deposition process may include a source process, a reaction process, a suppression process, and a modification process. The source process refers to a process in which a source gas is injected into the process chamber (100) and the source gas is distributed on the substrate (W). The reaction process refers to a process in which a reaction gas is injected into the process chamber (100) and a thin film is formed on the substrate (W). Specifically, the reaction process refers to a process in which a process material for the reaction gas reacts with the source gas deposited on the substrate (W) to form a thin film. The suppression process refers to a process in which a thin film is suppressed from being deposited at the entrance of a gap formed on the substrate (W), and the modification process refers to a process in which the density of the thin film deposited on the substrate (W) is improved.

[0081] Figure 3 is a plan view of the shower head.

[0082] Referring to FIG. 3, the showerhead (600) may include a plurality of spray holes (640).

[0083] A plurality of injection holes (640) may be formed in a radial pattern in the injection plate (620). Specifically, a plurality of injection holes (640) may be arranged on a first circumference. The plurality of injection holes (640) arranged on the first circumference may be arranged to be spaced apart from each other by a first interval. In addition, a plurality of injection holes (640) may be arranged on a second circumference arranged around the first circumference. The plurality of injection holes (640) arranged on the second circumference may be spaced apart from each other by a second interval. In addition, a plurality of injection holes (640) may be arranged on a third circumference arranged around the second circumference. The plurality of injection holes (640) arranged on the third circumference may be spaced apart from each other by a third interval. In this case, the first to third intervals may be the same. Additionally, the spacing between the first and second circumferences may be the same as the spacing between the second and third circumferences. That is, the injection holes (640) may be provided in the same number per unit area or in the same plane on the lower surface of the showerhead (600).

[0084] Hereinafter, the spray hole (640) arranged at the center of the showerhead (600) is referred to as the central spray hole, and the spray holes (640) arranged radially from the central spray hole are referred to as radial spray holes. A plurality of radial spray holes may be included on a single circumference formed based on the center of the showerhead (600) to form a single radial spray hole group. The showerhead (600) may include a plurality of radial spray hole groups having different diameters.

[0085] Figure 4 is a drawing for explaining the arrangement relationship between the spray holes of the shower head and the plasma generating unit.

[0086] Referring to FIG. 4, the injection holes (640) of the showerhead (600) may be positioned in an area that does not overlap with the through holes (740) of the plasma generator (700). Specifically, the plurality of injection holes (640) and the plurality of through holes (740) may be positioned so that they do not overlap with each other in the direction in which the process gas passes through the plurality of injection holes (640).

[0087] When the injection hole (640) of the showerhead (600) and the through hole (740) of the plasma generator (700) overlap, the process gas passing through the injection hole (640) may be discharged through the through hole (740) without being sufficiently diffused in the second diffusion space (730). In this case, the uniformity characteristics of the deposited material deposited on the substrate (W) may be deteriorated, so it is preferable that the injection hole (640) and the through hole (740) do not overlap each other.

[0088] The diameter of the plurality of through holes (740) may be formed to be larger than the diameter of the plurality of injection holes (640), the length of the plurality of through holes (740) may be formed to be longer than the length of the plurality of injection holes (640), and the number of the plurality of through holes (740) may be formed to be smaller than the number of the plurality of injection holes (640). Since the process gas is injected through the injection holes (640) having a relatively small diameter, the process gas is injected into the second diffusion space (730) at a relatively high pressure and can be diffused more easily. The process gas can be converted into plasma while passing through the through holes (740) having a relatively large diameter. The diameter and number of the through holes (740) may be appropriately determined in consideration of the process environment.

[0089] Fig. 5 is a drawing for explaining the arrangement relationship between the shower head and the gas supply line, and Fig. 6 is a drawing for explaining the deposition pattern of the thin film.

[0090] Referring to FIG. 5, the gas supply line (410) can be connected to the center of the showerhead (600).

[0091] The process gas discharged from the gas supply line (410) can be diffused in the first diffusion space (630) of the showerhead (600). Since the gas supply line (410) is connected to the center of the showerhead (600), the process gas can be diffused from the center to the edge of the first diffusion space (630). In this case, the density of the process gas can decrease as it progresses from the center to the edge of the first diffusion space (630). This density distribution of the process gas can also be maintained in the second diffusion space (730) of the plasma generation unit (700). That is, the density of the process material discharged from the plasma generation unit (700) can decrease as it progresses from the center to the edge of the second diffusion space (730). As a result, the thickness of the thin film deposited on the substrate (W) can decrease as it progresses from the center to the edge of the substrate (W).

[0092] The cross-section of the inner surface of the gas supply line (410) may be provided in a circular shape. The diameter (d) of the inner surface of the gas supply line (410) may be determined so that the plurality of injection holes (640) do not interfere with the extension line of the inner surface of the gas supply line (410) toward the injection plate (620). For example, among the plurality of injection holes (640), the central injection hole arranged in the center and the radial injection holes arranged radially first from the central injection hole may be included in the inner area of ​​the extension line.

[0093] If the extension line of the inner surface of the gas supply line (410) and the injection hole (640) interfere, a vortex may be formed around the injection hole (640), preventing normal diffusion of the process gas. Since the extension line of the inner surface of the gas supply line (410) and the injection hole (640) do not interfere, the injection hole (640) included in the inner area of ​​the extension line can directly inject the process gas supplied through the gas supply line (410), and the remaining injection holes (640) can inject the process gas diffused in the first diffusion space (630).

[0094] Fig. 6 illustrates a deposition pattern of a thin film (TF) deposited on a substrate (W). Fig. 6 illustrates a thin film (TF) having a thickness that decreases from the center to the edge of the substrate (W). Thin films (TF) of different thicknesses can be deposited on the substrate (W) in a generally circular shape.

[0095] As described above, the gas supply line (410) can supply a source purge gas and a reaction purge gas. The source purge gas and the reaction purge gas, like the source gas and the reaction gas, can be supplied to the process chamber (100) through the showerhead (600) and the plasma generator (700). The source purge gas and the reaction purge gas can also be supplied at a density that decreases as they progress from the center to the edge of the substrate (W), thereby allowing a circular thin film pattern having different thicknesses to be distinctly formed.

[0096] Figure 7 is a drawing for explaining the process cycle.

[0097] Referring to FIG. 7, multiple processes can be sequentially performed to deposit a thin film on a substrate (W).

[0098] A process cycle may include a source gas injection step, a source purge gas injection step, a reaction gas injection step, a reaction purge gas injection step, a suppression gas injection step, a suppression purge gas injection step, a reforming gas injection step, and a reforming purge gas injection step.

[0099] At each injection stage, a source gas, a source purge gas, a reaction gas, a reaction purge gas, a suppression gas, a suppression purge gas, a reforming gas, and a reforming purge gas may be supplied to the substrate (W) through a plasma generator (700), or some of the process gases may be supplied to the substrate (W) after being converted into a plasma state. When a process is performed on the substrate (W), process byproducts generated in the process chamber (100) may be transported to the exhaust line (700) through the exhaust line (160).

[0100] In the source gas injection step, a source gas may be injected into the process chamber (100). The source gas may be supplied to the surface of the substrate (W) through the plasma generator (700). Some of the source gas supplied to the substrate (W) may be adsorbed on the surface of the substrate (W), and some may not be adsorbed. The non-adsorbed source gas may be deposited on the adsorbed source gas or may float inside the process chamber (100).

[0101] After the source gas injection step, a source purge gas may be injected into the process chamber (100) in a source purge gas injection step. The source purge gas may be supplied to the process chamber (100) through the plasma generator (700). The source purge gas injection step may include a step in which the source gas not adsorbed on the surface of the substrate (W) is discharged from the process chamber (100). That is, when the source gas is purged from the process chamber (100), only the source gas adsorbed on the substrate (W) remains, and the source gas deposited on the adsorbed source gas or floating in the process chamber (100) may be discharged to the outside of the process chamber (100). Accordingly, a single source gas layer may be formed on the surface of the substrate (W).

[0102] After the source purge gas injection step, a process material (hereinafter referred to as a first process material) for the reaction gas may be injected into the process chamber (100) in the reaction gas injection step. Here, the first process material may be generated by converting the reaction gas into plasma by a plasma generator. The first process material may be supplied to the surface of the substrate (W) through the plasma generator (700). The first process material may react with the source gas adsorbed on the substrate (W) to form a thin film.

[0103] After the reaction gas injection step, a reaction purge gas may be injected into the process chamber (100) in a reaction purge gas injection step. As the reaction purge gas is injected, the first process material may be purged from the process chamber (100). The reaction purge gas for purging the first process material may be supplied to the process chamber (100) through the plasma generator (700). As the reaction purge gas is injected into the process chamber (100), process byproducts that are not used to form a thin film on the surface of the substrate (W) may be discharged from the process chamber (100).

[0104] After the reaction purge gas injection step, a process material (hereinafter referred to as a second process material) for the suppressing gas may be injected into the process chamber (100) in the suppressing gas injection step. The second process material may be generated by converting the suppressing gas into plasma by a plasma generator. The second process material may be supplied to the surface of the substrate (W) through the plasma generator (700). The second process material may provide a deposition suppressing effect on a thin film already formed on the substrate (W).

[0105] After the suppression gas injection step, a suppression purge gas may be injected into the process chamber (100) in a suppression purge gas injection step. As the suppression purge gas is injected, the second process material may be purged from the process chamber (100). The suppression purge gas for purging the second process material may be supplied to the process chamber (100) through the plasma generator (700). As the suppression purge gas is injected into the process chamber (100), process byproducts including the second process material may be discharged from the process chamber (100).

[0106] After the suppression purge gas injection step, a process material (hereinafter referred to as a third process material) for the reforming gas may be injected into the process chamber (100) in the reforming gas injection step. The third process material may be generated by converting the reforming gas into plasma by a plasma generator. The third process material may be supplied to the surface of the substrate (W) through the plasma generator (700). The density of the thin film deposited on the substrate (W) may be improved by the third process material.

[0107] After the reforming gas injection step, a reforming purge gas may be injected into the process chamber (100) in a reforming purge gas injection step. As the reforming purge gas is injected, the third process material may be purged from the process chamber (100). The reforming purge gas for purging the third process material may be supplied to the process chamber (100) through the plasma generator (700). As the reforming purge gas is injected into the process chamber (100), process byproducts including the third process material may be discharged from the process chamber (100).

[0108] Multiple processes as described above are performed sequentially to form one process cycle, and multiple layers of thin films can be deposited on a substrate (W) through multiple process cycles.

[0109] In the present invention, the substrate (W) may include a gap. When only a thin film deposition process using a source gas and a reactant gas is performed, the entrance to the gap may be blocked by the thin film, forming a void or seam within the gap. A deposition suppression process can suppress thin film deposition around the gap. This allows process gases and process materials to easily penetrate the gap during each process cycle, and allows the interior of the gap to be filled with process materials.

[0110] Figure 8 is a drawing showing a gap formed in the substrate.

[0111] Referring to FIG. 8, a gap (G) may be formed in the substrate (W). For example, the gap (G) may be a spacing between wires.

[0112] A thin film (TF) may be formed as an interlayer insulating film on a substrate (W). In this case, it is desirable for the process material for forming the thin film (TF) to penetrate and fill the gap (G). On the other hand, if the spacing between the wires is fine, it may not be easy for the process material to penetrate into the gap (G), and thus the proper formation of the thin film (TF) may not be performed. In particular, if the diameter (D) of the entrance to the gap (G) is small and the depth (H) of the gap (G) is deep, it may not be easy for the process material to penetrate into the gap (G). This is because the thin film (TF) formed at the entrance to the gap (G) blocks the entrance, thereby preventing the process material from penetrating into the interior of the gap (G).

[0113] The plasma generation unit (700) of the substrate processing device (10) according to an embodiment of the present invention can generate a process material having a relatively high horizontal movement component. As the process material having a high horizontal movement component is used, the deposition of the thin film (TF) at the entrance of the gap (G) is prevented, so that the process material can penetrate into the gap (G), and the gap (G) can be filled with the process material. In particular, the substrate processing device (10) according to an embodiment of the present invention can suppress the deposition of the thin film (TF) on the surface of the substrate (W) by adding a deposition suppression process after the deposition process. Accordingly, the deposition of the thin film (TF) at the entrance of the gap (G) is suppressed, so that the process material can penetrate into the gap (G), and the gap (G) can be filled with the process material.

[0114] FIG. 9 is a drawing showing a source gas being distributed on a substrate, FIG. 10 is a drawing showing a thin film being deposited on a substrate, FIG. 11 is a drawing showing a third process material being distributed on a substrate, FIG. 12 is a drawing showing a thin film being deposited on a substrate on which a third process material is distributed, and FIG. 13 is a drawing for explaining a process of depositing a thin film on a substrate.

[0115] Referring to Fig. 9, a source gas (SG) can be supplied to a substrate (W) for deposition of a thin film (TF). The source gas (SG) can be distributed on the surface of the substrate (W) to form a source gas layer.

[0116] Figure 9 (a) shows that a source gas (SG) is supplied to a substrate (W), and (b) shows that a source gas layer is formed on the surface of the substrate (W).

[0117] Referring to FIG. 10, a first process material (PM1) can be supplied to a substrate (W) on which a source gas layer is formed.

[0118] The first process material (PM1) can form a thin film (TF) by reacting with a source gas (SG) distributed on the surface of the substrate (W). The first process material (PM1) may be generated by converting a reaction gas into plasma by a plasma generator (700).

[0119] Figure 10 (a) shows that a first process material (PM1) is supplied to a substrate (W), and (b) shows that a thin film (TF) is deposited on the substrate (W).

[0120] The first process material (PM1) may have a relatively high horizontal mobility component. Because of this relatively high horizontal mobility component, a high contact opportunity is formed between the first process material (PM1) that has penetrated into the gap (G) and the sidewall of the gap (G), thereby improving the deposition efficiency of the thin film (TF) on the sidewall of the gap (G).

[0121] Referring to FIG. 11, a second process material (PM2) can be supplied to the substrate (W) to suppress deposition of a thin film (TF).

[0122] The second process material (PM2) may be generated by converting a suppressing gas into plasma by a plasma generator (700). The second process material (PM2) may be combined with a pre-formed thin film (TF).

[0123] Figure 11 (a) shows that a second process material (PM2) is supplied to a substrate (W), and (b) shows that the second process material (PM2) is bonded to a thin film (TF) formed on the substrate (W).

[0124] The second process material (PM2) may be supplied to the process chamber (100) with a relatively low density. For example, the second process material (PM2) may have a lower density than the first process material (PM1). Accordingly, the second process material (PM2) may be distributed with a higher density on the surface of the substrate (W) and at the entrance of the gap (G) compared to the interior of the gap (G).

[0125] Referring to FIG. 12, in a subsequent process cycle, a first process material (PM1) may be supplied to a substrate (W) to which a second process material (PM2) is bonded to a thin film (TF).

[0126] As the first process material (PM1) is supplied, another thin film (TF) can be deposited on the substrate (W). Fig. 12 (a) shows that the first process material (PM1) is supplied to the substrate (W), and (b) shows that the thin film (TF) is deposited on the substrate (W).

[0127] The second process material (PM2) can be bonded to the previously deposited thin film (TF) to suppress the first process material (PM1) from being bonded to the thin film (TF). Accordingly, the deposition of an additional thin film (TF) can be suppressed by the second process material (PM2). Since a relatively high density of the second process material (PM2) is distributed around the surface of the substrate (W) and the entrance of the gap (G), the thickness of the thin film (TF) deposited on the surface of the substrate (W) and the entrance of the gap (G) can be formed relatively thin. In contrast, since a relatively low density of the second process material (PM2) is distributed on the sidewall of the gap (G), the thickness of the thin film (TF) deposited on the sidewall of the gap (G) can be formed relatively thick.

[0128] Referring to Figure 13, as the process cycle is repeated, a thin film (TF) is deposited on the substrate (W), and the gap (G) can be filled with the thin film (TF).

[0129] In particular, as the process cycle is repeated, the deposition of the thin film (TF) on the surface of the substrate (W) and around the entrance of the gap (G) is suppressed, and the process material easily enters the interior of the gap (G), so that the deposition of the thin film (TF) inside the gap (G) can be performed normally. Accordingly, the formation of a void or seam inside the gap (G) is prevented, and normal deposition of the thin film (TF) can be performed.

[0130] Fig. 14 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention, and Fig. 15 is a drawing for explaining gap fill conditions.

[0131] Referring to FIG. 14, a substrate processing method according to an embodiment of the present invention may include a step (S1010) in which a source gas (SG) is injected to perform a source process, a step (S1020) in which a reaction gas is injected to perform a reaction process, a step (S1030) in which a suppression gas is injected to perform a suppression process, a step (S1040) in which a modification gas is injected to perform a modification process, and a step (S1050) in which it is determined whether a gap-fill condition set in advance is satisfied.

[0132] The step (S1010) in which the source process is performed may include a step in which a source gas (SG) is injected and a step in which a source purge gas is injected. The step (S1020) in which the reaction process is performed may include a step in which a reaction gas is injected, a step in which the reaction gas is plasma-converted into a first process material (PM1) in a plasma state, and a step in which a reaction purge gas is injected. The step (S1030) in which the suppression process is performed may include a step in which a suppression gas is injected, a step in which the suppression gas is plasma-converted into a second process material (PM2) in a plasma state, and a step in which the suppression purge gas is injected. The step (S1040) in which the reforming process is performed may include a step in which a reforming gas is injected, a step in which the reforming gas is plasma-converted into a third process material in a plasma state, and a step in which a reforming purge gas is injected.

[0133] The reaction gas used in the reaction process, the suppression gas used in the suppression process, and the modification gas used in the modification process can be converted into plasma by the plasma generator (700) into process materials in a plasma state and supplied to the substrate (W). As a result, the reaction process, the suppression process, and the modification process can be performed more effectively.

[0134] The modification process can be performed after the suppression process. After suppressing the deposition of the thin film (TF) through the suppression process, the density of the thin film (TF) can be increased.

[0135] The step (S1050) for determining whether the gap-fill condition is satisfied represents a step for determining whether a process is performed to prevent the formation of a void or seam inside the gap (G). For example, if the gap-fill condition is satisfied, it can be determined that no void or seam is formed inside the gap (G). Depending on whether the gap-fill condition is satisfied, at least one of the reaction process, the inhibition process, and the reforming process may be repeated.

[0136] Referring to FIG. 15, whether the gap-fill condition is satisfied can be determined by referring to the ratio of the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) that has been previously processed and the thickness (T2) of the thin film (TF) formed in the gap (G). Specifically, if the ratio of the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) to the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) (hereinafter referred to as the first thickness ratio) is greater than a preset ratio, it can be determined that the gap-fill condition is satisfied. For example, if the first thickness ratio exceeds 125%, it can be determined that the gap-fill condition is satisfied. That is, if the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) exceeds 1.25 in a state where the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) is 1, it can be determined that the gap-fill condition is satisfied. Meanwhile, if the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) is 1 and the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) is 1.25 or less, it can be determined that the gap fill condition is not satisfied.

[0137] Alternatively, according to some embodiments of the present invention, whether the gap-fill condition is satisfied may be determined with reference to the ratio of the depth (H) of the gap (G) and the thickness (T3) of the thin film (TF) formed on the gap (G). Specifically, if the ratio of the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) to the depth (H) of the gap (G) (hereinafter referred to as the second thickness ratio) is greater than a preset ratio, the gap-fill condition may be determined to be satisfied. The second thickness ratio for determining whether the gap-fill condition is satisfied may be 70 to 80%. For example, if the second thickness ratio exceeds 80%, the gap-fill condition may be determined to be satisfied. That is, if the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) exceeds 0.8 when the depth (H) of the gap (G) is 1, the gap-fill condition may be determined to be satisfied. Meanwhile, if the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) is 0.8 or less when the depth (H) of the gap (G) is 1, it can be determined that the gap fill condition is not satisfied.

[0138] The above has described that whether the gap fill condition is satisfied is determined based on the first thickness ratio or the second thickness ratio. However, according to some embodiments of the present invention, whether the gap fill condition is satisfied may also be determined based on at least one of the first thickness ratio and the second thickness ratio.

[0139] Whether the gap-fill condition is satisfied can be determined by observing the gap (G) of a pre-processed substrate (W). For example, the gap-fill condition may include the number of process cycles required for the gap (G) of a pre-processed substrate (W) to be filled. In this case, if the corresponding number of process cycles is repeated for a subsequent processed substrate (W), the gap-fill condition may be determined to be satisfied.

[0140] Fig. 16 is a drawing for explaining that the reaction process is repeated individually, Fig. 17 is a drawing for explaining that the inhibition process is repeated individually, Fig. 18 is a drawing for explaining that the modification process is repeated individually, and Fig. 19 is a drawing for explaining that the reaction process, the inhibition process, and the modification process are repeated as an integrated whole.

[0141] Referring to FIGS. 16 to 19, the control unit (900) may repeat at least one of the reaction process, the suppression process, and the modification process with reference to a gap-fill condition set in advance. In particular, in order to prevent a thin film (TF) from being deposited at the entrance of the gap (G), the control unit (900) may repeat at least one of the suppression process and the modification process.

[0142] Figure 16 illustrates the repetition of a reaction process within one process cycle, Figure 17 illustrates the repetition of an inhibition process within one process cycle, and Figure 18 illustrates the repetition of a modification process within one process cycle.

[0143] The control unit (900) can repeat at least one of the reaction process, the inhibition process, and the reforming process within one process cycle to satisfy the gap fill condition, and this process cycle can be repeated several times.

[0144] Referring to FIG. 19, the control unit (900) can individually or collectively repeat the reaction process, the suppression process, and the modification process. In particular, to prevent a thin film (TF) from being deposited at the entrance of the gap (G), the control unit (900) can individually or collectively repeat the suppression process and the modification process.

[0145] In the present invention, integrated repetition means that multiple processes are sequentially performed within one process cycle, and the sequential performance of these multiple processes is repeated.

[0146] Figure 19 illustrates that the reaction process, the inhibition process, and the reforming process are repeated in an integrated manner, but this is exemplary, and the reaction process and the inhibition process may be repeated in an integrated manner, or the inhibition process and the reforming process may be repeated in an integrated manner.

[0147] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A process chamber that provides a process processing space for the substrate process; A showerhead comprising a plurality of injection holes and injecting process gas through the plurality of injection holes; A plasma generating unit disposed on the lower side of the showerhead and including a plurality of through holes that form an electric field by supplied RF power, and converting process gas supplied from the showerhead into process material in a plasma state; and Including a control unit for controlling a thin film deposition process for the above substrate, The above thin film deposition process is, A suppression process for suppressing the deposition of a thin film at the entrance of a gap formed on the substrate; and Comprising at least one modification process for improving the density of a thin film deposited on the substrate, A substrate processing device in which the control unit repeats at least one of the suppression process and the modification process with reference to a gap-fill condition set in advance.

2. In paragraph 1, A substrate processing device, wherein the showerhead and the plasma generating unit each include a first diffusion space and a second diffusion space for diffusion of a process gas.

3. In paragraph 1, The above control unit is a substrate processing device that individually or integrally repeats the suppression process and the modification process.

4. In paragraph 1, A substrate processing device in which the above modification process is performed after the above suppression process.

5. In paragraph 1, The above gap fill condition is a substrate processing device including the number of processing cycles in which the gap of a pre-processed substrate is filled.

6. In paragraph 1, The above thin film deposition process further includes a reaction process in which a process material for a reaction gas reacts with a source gas deposited on the substrate to form a thin film, The above control unit is a substrate processing device that repeats the reaction process with reference to the gap fill condition.

7. In paragraph 6, A substrate processing device in which the reaction gas used in the above reaction process, the suppression gas used in the suppression process, and the modifying gas used in the modifying process are converted into plasma by the plasma generator into a process material in a plasma state and supplied to the substrate.

8. In paragraph 7, The above reaction gas comprises at least one of ammonia (NH3) and oxygen (O2), The above suppressing gas comprises at least one of hydrogen (H2) and ammonia (NH3), A substrate processing device wherein the above-mentioned modifying gas comprises at least one of argon (Ar) and hydrogen (H2).

9. In paragraph 7, A substrate processing device in which the process material for the above suppressing gas has a lower density than the process material for the above reactant gas.

10. In paragraph 1, The above plasma generating unit is a substrate processing device that converts process gas into process material in a plasma state using a hollow cathode plasma (HCP) method.

11. In paragraph 1, A substrate processing device in which satisfaction of the above gap fill condition is determined by referring to the ratio of the depth of the gap formed on the substrate and the thickness of the thin film formed in the gap.

12. A step in which a source gas is injected and a source process is performed; A step in which a reaction gas is injected and a reaction process is performed; A step in which a suppression gas is injected and a suppression process is performed; A step in which reforming gas is injected and a reforming process is performed; and Including a step for determining whether the gap fill condition is satisfied, The source gas, the reaction gas, the suppression gas, and the reforming gas are diffused in the second diffusion space after being diffused in the first diffusion space, The above reaction gas, the suppression gas, and the reforming gas are converted into plasma into a process material in a plasma state by passing through a plurality of through holes that form an electric field by the supplied RF power after being diffused in the second diffusion space, A substrate processing method in which at least one of the suppression process and the modification process is repeated depending on whether the above gap fill condition is satisfied.

13. In paragraph 12, A substrate processing method in which the above suppression process and the above modification process are repeated individually or integratedly.

14. In paragraph 12, The above modification process is a substrate processing method arranged after the above suppression process.

15. In paragraph 12, The above gap fill condition is a substrate processing method including the number of processing cycles when the gap of a pre-processed substrate is filled.

16. In paragraph 12, The above reaction process includes a process in which a process material for the reaction gas reacts with a source gas distributed on the substrate to form a thin film, The above reaction process is a substrate processing method in which the above gap fill conditions are referenced and repeated.

17. In paragraph 12, A substrate processing method in which the above reaction gas, the suppression gas, and the reforming gas are converted into a process material in a plasma state using a hollow cathode plasma (HCP) method.

18. In paragraph 12, A substrate processing method wherein the process material for the above suppressing gas has a lower density than the process material for the above reacting gas.

19. In paragraph 12, It further includes a step of forming a thin film on the substrate by reacting the process material for the reaction gas with the source gas after the source gas is distributed on the substrate. The above suppression process includes a process of suppressing the deposition of a thin film at the entrance of a gap formed in the substrate, A substrate processing method wherein the above modification process includes a process for improving the density of a thin film deposited on the substrate.

20. In paragraph 19, A substrate processing method in which satisfaction of the above gap fill condition is determined by referring to the ratio of the depth of the gap formed on the substrate and the thickness of the thin film formed in the gap.

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