Apparatus and method for real-time measurement of thin film deposition thickness

Abstract

The present invention relates to a technology for directly and rapidly measuring the thickness of a thin film in a deposition apparatus during a production process without damaging the surface of a measurement sample and, more specifically, to a technology for measuring the thickness of a thin film by real-time measurement and analysis of chemical components of substances remaining inside a chamber in which the thin film is formed. The apparatus for real-time measurement of a thin film deposition thickness according to the present invention comprises: a chamber in which a thin film deposition process is performed; an analyzer for measuring, in real time, gaseous substances present in the chamber during the thin-film deposition process; and a calculation unit for calculating the thin film deposition thickness according to the following equation on the basis of data measured by the analyzer. Thin film deposition thickness = {[a1 X Σ(amount of thin film deposition by-products) ] x [a2 X Σ(amount of oxygen by-products) ] x [a3 X Σ(amount of nitrogen by-products) ] + a4} / [a5 X Σ(amount of deposition gas) ] x a6, where a1, a2, a3, a4, a5, and a6 are predetermined constants.

Description

Thin film deposition thickness real-time measurement device and method

[0001] The present invention is to provide a method for measuring a sample without damaging its surface during the production process.

[0002] It is about a technology to quickly measure the thickness of a thin film directly in the deposition equipment, and the thin film

[0003] Measure and analyze in real time the chemical composition of the material remaining inside the forming chamber.

[0004] This is a technology for measuring the thickness of a thin film.

[0005] Selectively depositing various materials such as dielectrics, semiconductors, and metals onto a semiconductor substrate (wafer)

[0006] To form a semiconductor / display manufacturing process, various processes such as etching, deposition, and cleaning are performed.

[0007] A process technology utilizing chemical reactions is applied. The thin film formed in the deposition process is a semiconductor.

[0008] A material in the range of several nm to μm on a wafer substrate for a body or a glass substrate for a display.

[0009] The thickness and composition of the thin film formed are determined by the deposition process.

[0010] It depends greatly on the properties of the material to be deposited as well as the process conditions. In particular,

[0011] In order to develop high-density semiconductor materials with increasing thinness and multi-layering, precise thin film

[0012] Although thickness control is more important, the thickness of the film is determined by the amount of material to be deposited and the time

[0013] In addition, thin film deposition is affected by various environmental variables such as plasma power, time, chamber shape and size, and by-products generated from various chemical reactions within the chamber.

[0014] The thickness of the film can only be accurately measured after the completed wafer is removed from the chamber.

[0015] There are two main techniques for measuring the thickness of thin films: mechanical methods using probes and optical methods.

[0016] There are methods such as using the law and a microscope.

[0017] The method of using an electron microscope or atomic force microscope has the advantage of being able to directly check the thickness with the naked eye by cutting the sample, obtaining an image, and then measuring the thickness. However, it takes more time to measure, and requires technology to process the wafer specimen being measured, which must be tolerated as a result of sample loss.

[0018] The mechanical method (WO 2010 / 151030 A2, J Korean Soc Precis Eng, Vol 32, No 2, pp 159-166) has the advantage of being able to measure the thickness of not only organic films but also metal thin films using a probe, but has the disadvantages of not being able to measure multiple layers at once, being slow in measurement speed, and possibly causing destruction and contamination of the sample.

[0019] Widely used optical methods (WO 2016 / 171397 A1) include a spectrophotometer and a reflective ellipsometer that measures the thickness of a thin film by measuring the difference in polarization states between incident and reflected light on the thin film surface. Although these methods have the limitation of being difficult to measure thickness in ultra-thin films or in wavelength ranges where interference occurs, they have the advantage of being able to measure thin films of various thicknesses without sample loss.

[0020] Conventional thin film thickness measuring devices take the deposited wafer out of the chamber and measure the thickness of the thin film. Therefore, in the production process where various post-processes must be performed even after deposition, the thickness of the deposited thin film cannot be measured directly. Therefore, a constant thin film thickness is maintained by keeping the deposition environment as constant as possible. However, in the case of highly integrated semiconductor materials where the thin film thickness is thinner and the line width is miniaturized, the change in thin film thickness due to a slight change in the deposition environment significantly affects the defect rate of the material. Therefore, a technology is needed to accurately measure the thickness of the thin film formed after deposition in real time and measure the change in thin film thickness in real time.

[0021]

[0022] The purpose of the present invention is to provide a thin film thickness monitoring technology capable of monitoring the thin film thickness in real time within a chamber to overcome the limitations of existing thin film thickness measurement methods that measure the thin film thickness after taking the wafer or glass substrate out of the chamber after thin film formation is completed and the limitations that the thickness measurement of the internal deposition film of a multi-layered film can only be performed through destructive analysis.

[0023]

[0024] A real-time measuring device for a thin film deposition thickness according to the present invention comprises: a chamber in which a thin film deposition process is performed; an analyzer for measuring gaseous substances in the chamber in real time during the thin film deposition process; and a calculation unit for calculating the thin film deposition thickness by the following formula based on data measured by the analyzer.

[0025] Thin film deposition thickness = {[a1 × Σ(amount of thin film deposition byproduct)] × [a2 ×Σ(amount of oxygen byproduct)] × [a3 × Σ(amount of nitrogen byproduct)] + a4} / [a5 × Σ(amount of deposition gas)] × a6

[0026] a1, a2, a3, a4, a5 and a6 are predetermined constants

[0027] On the other hand, a method for measuring a thin film deposition thickness in real time according to the present invention includes a step of performing a thin film deposition process in a chamber; a step of measuring gaseous substances in the chamber in real time during the thin film deposition process using an analyzer; and a step of calculating a thin film deposition thickness using the following formula based on data measured by the analyzer using a calculation unit.

[0028] Thin film deposition thickness = {[a1 × Σ(amount of thin film deposition byproduct)] × [a2 ×Σ(amount of oxygen byproduct)] × [a3 × Σ(amount of nitrogen byproduct)] + a4} / [a5 × Σ(amount of deposition gas)] × a6

[0029] a1, a2, a3, a4, a5 and a6 are predetermined constants

[0030] In these devices and methods, the thin film deposition byproducts include Si, SiH, SiH2,SiH3, Si2H6, SiCl, SiCl2, SiCl3, SiCl4, Si2Cl, Si2Cl2, Si2Cl3, Si2Cl4, SiCl5,C, CH, CH2, CH3, C2H, C2H2, C2H3, C2H4, C2H5, M, Ligand, M(Ligand)x-1, M(Ligand)x-2, M(Ligand)x-3, M(Ligand)x-4, M(Ligand)x-5, M(Ligand)x-6 or M(Ligand)x-7, where M is a metal atom and the Ligand comprises H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, May contain Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, Alkyls, Alkoxides, Alkyl amides, Amines, Ketones or Sulfonyls.

[0031] Additionally, oxygen byproducts may include O, O2, CO, CO2, SO, SO2, H2O, oxides of central atoms of precursors used in the thin film deposition process, or oxides of ligands of precursors used in the thin film deposition process.

[0032] Additionally, nitrogen byproducts may include N, NH, NH2, NO, NO2, nitrogen compounds of central atoms of precursors used in the thin film deposition process, or nitrogen compounds of ligands of precursors used in the thin film deposition process.

[0033] In addition, the deposition gas includes a material composed of SiH4, O2, N2O, NH3, N2, HCDS, 3DMAS, DIPAS,CDS, TiC4, TDMAT, TaCl5, PDMAT, TMA, WF6, WCl6, CpZr, TDMAH, OMCTS, TMCTS or a combination of a central atom and a ligand, and the central atom includes Si, Al, W, Ge, B, Ti, Ta, Zr, Ni, Co, Hf, Pt, Pd, Rh, Fe, Cu, Ga, Zn, In, V, Nb, Cr, Mo, Y, Cd, Sn or Au, and the ligand includes H, F, Cl, Br, I, H, O, S, NH3, CH3,CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, May contain alkyls, alkoxides, alkyl amides, amines, ketones or sulfonyl groups.

[0034] Additionally, a1, a2, a3, a4, a5, and a6 can be determined through correlation regression analysis and deep learning.

[0035] In addition, 'Σ(amount of thin film deposition byproduct)' may be the sum total of the amounts of all thin film deposition byproducts measured by the analyzer, 'Σ(amount of oxygen byproduct)' may be the sum total of the amounts of all oxygen byproducts measured by the analyzer, 'Σ(amount of nitrogen byproduct)' may be the sum total of the amounts of all nitrogen byproducts measured by the analyzer, or 'Σ(amount of deposition gas)' may be the sum total of the amounts of all deposition gases measured by the analyzer.

[0036] In addition, 'Σ(amount of thin film deposition byproduct)' may be the sum of the amounts of some substances among the thin film deposition byproducts measured by the analyzer, 'Σ(amount of oxygen byproduct)' may be the sum of the amounts of some substances among the oxygen byproducts measured by the analyzer, 'Σ(amount of nitrogen byproduct)' may be the sum of the amounts of some substances among the nitrogen byproducts measured by the analyzer, or 'Σ(amount of deposition gas)' may be the sum of the amounts of some substances among the deposition gas measured by the analyzer.

[0037] Additionally, the above-mentioned some substances include the top n substances that have been found to have a high correlation through experiments, and n can be a predetermined natural number.

[0038] Additionally, some of the above substances can be determined through correlation regression analysis and deep learning.

[0039]

[0040] The device and method for measuring the thin film deposition thickness in real time according to the present invention can monitor the thin film deposition thickness in real time within the chamber by measuring the gaseous byproducts within the chamber using an analyzer during the deposition reaction and / or cleaning reaction as a thin film deposition process and deriving the thin film deposition thickness based on the amount thereof. Through this, wafers on which a thin film has not been formed to a desired thickness during the process can be dealt with early, thereby reducing manufacturing costs by not performing unnecessary post-processing, thereby improving economic efficiency. In addition, by detecting abnormalities in the deposition environment, such as the reaction chamber, early on, the defect rate of semiconductor materials can be reduced and the productivity of good products can be improved.

[0041]

[0042] Figure 1 is a schematic diagram of a real-time thin film deposition thickness measurement device according to an embodiment of the present invention.

[0043] FIG. 2 is a graph showing the correlation between the thin film deposition thickness calculated using a real-time thin film deposition thickness measurement method according to an embodiment of the present invention for process byproducts measured in a chamber during a SiN thin film deposition process using SiH4 and NH3 gases and the thin film deposition thickness measured using an ellipsometer after the process is performed.

[0044] Figure 3 is a graph showing the accuracy of the predicted thin film deposition thickness using a formula based on constants (a1, a2, a3, a4, a5, a6) determined through deep learning for the correlation between the process byproducts measured in the chamber and the thin film deposition thickness measured with an ellipsometer while performing the SiO2 thin film deposition process using SiH4 and N2O gases 69 times.

[0045]

[0046] A detailed description will be given of a real-time thin film deposition thickness measurement device and method according to an embodiment of the present invention with reference to the drawings.

[0047] Figure 1 is a schematic diagram of a real-time thin film deposition thickness measurement device (10) according to an embodiment of the present invention.

[0048] Referring to Fig. 1, a real-time thin film deposition thickness measuring device (10) includes a chamber (11), an analyzer (12), and a computation unit (13).

[0049] The chamber (11) is a place where deposition reactions, cleaning reactions, etc., occur in a thin film deposition process. The thin film deposition process may be, for example, a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, an ALD (Atomic Layer Deposition) process, etc.

[0050] The deposition reaction can proceed, for example, according to the reaction equation below.

[0051] SiH4(g) + 4N2O(g) → SiO2(s) + 4N2(g) + 2H2O(g) + O2(g)

[0052] Additionally, in one embodiment, the deposition reaction may proceed according to, for example, the reaction formula below.

[0053] 3SiH4(g) + 2NH3(g) + N2(g) → Si3N4(s) + 3H2(g)

[0054] Additionally, the deposition reaction can proceed according to the reaction formula below, for example.

[0055] 3Al(CH3)4(g) + 3H2O(g) → Al2O3(s) + 6CH4(g)

[0056] Additionally, the deposition reaction may proceed according to the following reaction equation, which uses a precursor as a deposition gas, for example, and has an arbitrary reaction coefficient determined by the chemical composition of the ligand of the precursor.

[0057] aSi(Ligand)x(g) + bH2O(g) → cSiO2(s) + d[H(Ligand)](g)

[0058] a, b, c, d: reaction coefficients

[0059] x: number of ligands in the precursor molecule

[0060] Additionally, the deposition reaction may proceed according to the following reaction equation, which uses a precursor as a deposition gas, for example, and has an arbitrary reaction coefficient determined by the chemical composition of the ligand of the precursor.

[0061] aSi(Ligand)x (g) + bNH3(g) → cSi3N4(s) + d[H(Ligand)](g)

[0062] a, b, c, d: reaction coefficients

[0063] x: number of ligands in the precursor molecule

[0064] Additionally, the deposition reaction can proceed according to the following reaction equation, which uses a precursor whose central atom is a metal, and has an arbitrary reaction coefficient determined by the chemical composition of the ligand of the precursor.

[0065] aM(Ligand)x(g) + bH2O(g) → cSiO2(s) + d[H(Ligand)](g)

[0066] a, b, c, d: reaction coefficients

[0067] M: metal atom

[0068] x: number of ligands in the precursor molecule

[0069] Additionally, the deposition reaction can proceed according to the following reaction equation, which uses a precursor whose central atom is a metal, and has an arbitrary reaction coefficient determined by the chemical composition of the ligand of the precursor.

[0070] aM(Ligand)x(g) + bNH3(g) → cSi3N4(s) + d[H(Ligand)](g)

[0071] a, b, c, d: reaction coefficients

[0072] M: Metal atom or central atom

[0073] x: number of ligands in the precursor molecule

[0074] The central atoms of the precursors used as deposition gases may include, for example, Si, Al, W, Ge, B, Ti, Ta, Zr, Ni, Co, Hf, Pt, Pd, Rh, Fe, Cu, Ga, Zn, In, V, Nb, Cr, Mo, Y, Cd, Sn, Au, etc.

[0075] Ligands of precursors used as deposition gases may include, for example, H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, and Alkyls, Alkoxides, Alkyl amides, Amines, Ketons, Sulfonyls, etc.

[0076] The analyzer (12) serves to measure gaseous substances in the chamber (11) in real time during the thin film deposition process. The analyzer (12) may be directly connected to the interior of the chamber (11) or may be connected to the exhaust line (foreline, exhaust line) of the chamber (11). The analyzer (12) may be, for example, a mass spectrometer or a spectrometer.

[0077] The calculation unit (13) serves to calculate the thin film deposition thickness based on data measured by the analyzer (12) during the thin film deposition process, more specifically, the deposition reaction and / or cleaning reaction.

[0078] More specifically, the calculation unit (13) can calculate the thin film deposition thickness by using the following formula, using the fact that the thin film deposition thickness is proportional to the amount of thin film deposition byproducts, the amount of oxygen byproducts, and the amount of nitrogen byproducts in the chamber (11) during the deposition reaction and / or cleaning reaction, and inversely proportional to the amount of deposition gas.

[0079] (Formula 1) Thin film deposition thickness = {[a1 × Σ(amount of thin film deposition byproduct)] ×[a2 × Σ(amount of oxygen byproduct)] × [a3 × Σ(amount of nitrogen byproduct)] + a4} / [a5 × Σ(amount of deposition gas)] × a6

[0080] Here, a1, a2, a3, a4, a5, and a6 are predetermined constants.

[0081] In one embodiment, a1, a2, a3, a4, a5, and a6 can be determined, for example, through experiments. For example, while conducting a thin film deposition process for experiments, gaseous substances in a chamber (11) are measured using an analyzer (12), and then the actual thin film deposition thickness is measured using an electron microscope or an atomic force microscope. Each constant can be obtained so that the result of substituting the data measured by the analyzer (12) into the above formula has a value corresponding to the actual thin film deposition thickness. The optimal constant can be obtained by repeating this experiment several times.

[0082] In addition, as an example, a1, a2, a3, a4, a5, and a6 can be determined through correlation regression analysis and deep learning between data measured by, for example, an analyzer (12) and the actual thin film deposition thickness. For example, by initially performing the thin film deposition process several times and measuring gaseous substances in the chamber (11) using the analyzer (12), and then measuring the actual thin film deposition thickness using an electron microscope or an atomic force microscope, correlation regression analysis and deep learning can be performed on these to obtain each constant.

[0083] Thin film deposition byproducts may include, for example, Si, SiH, SiH2, SiH3, Si2H6, SiCl,SiCl2, SiCl3, SiCl4, Si2Cl, Si2Cl2, Si2Cl3, Si2Cl4, SiCl5, C, CH, CH2, CH3,C2H, C2H2, C2H3, C2H4, C2H5, M, Ligand, M(Ligand)x-1, M(Ligand)x-2, M(Ligand)x-3,M(Ligand)x-4, M(Ligand)x-5, M(Ligand)x-6, M(Ligand)x-7, etc.

[0084] Oxygen byproducts may include, for example, O, O2, CO, CO2, SO, SO2, H2O, oxides of the aforementioned central atoms, oxides of the aforementioned ligands, etc.

[0085] Nitrogen byproducts may include, for example, N, NH, NH2, NO, NO2, nitrogen compounds of the aforementioned central atoms, nitrogen compounds of the aforementioned ligands, etc.

[0086] The deposition gas may include, for example, SiH4, O2, N2O, NH3, N2, HCDS, 3DMAS,DIPAS, CDS, TiC4, TDMAT, TaCl5, PDMAT, TMA, WF6, WCl6, CpZr, TDMAH, OMCTS, TMCTS, and materials composed of combinations of central atoms and ligands of the aforementioned precursors.

[0087] In one embodiment, the calculation unit (13) can calculate the thin film deposition thickness using the entire data measured by the analyzer (12). In this case, Equation 1 can be concretized as Equation 2 below.

[0088] (Formula 2) Thin film deposition thickness = {[a1 × Σ(amount of all thin film deposition byproducts)] × [a2 × Σ(amount of all oxygen byproducts)] × [a3 × Σ(amount of all nitrogen byproducts)] + a4} / [a5 × Σ(amount of all deposition gases)] × a6

[0089] For the sake of clarity, for example, if Si, SiH, SiH2, SiH3 and Si2H6 are detected as thin film deposition by-products by the analyzer (12), then in Equation 2, 'Σ(amount of all thin film deposition by-products)' means the sum total of all of these, i.e., the sum total of the amounts of Si, SiH, SiH2, SiH3 and Si2H6. The same applies to the remaining oxygen by-products, nitrogen by-products and deposition gases. In other words, in Equation 2, 'Σ(amount of all oxygen by-products)' means the sum total of the amounts of all oxygen by-products measured by the analyzer (12), 'Σ(amount of all nitrogen by-products)' means the sum total of the amounts of all nitrogen by-products measured by the analyzer, and 'Σ(amount of all deposition gases)' means the sum total of the amounts of all deposition gases measured by the analyzer (12).

[0090] In addition, as an example, the calculation unit (13) can calculate the thin film deposition thickness using data on some materials among the data measured by the analyzer (12). In this case, Equation 1 can be concretized as Equation 3 below.

[0091] (Formula 3) Thin film deposition thickness = {[a1 × Σ(amount of some thin film deposition byproducts)] × [a2 × Σ(amount of some oxygen byproducts)] × [a3 × Σ(amount of some nitrogen byproducts)] + a4} / [a5 × Σ(amount of some deposition gases)] × a6

[0092] For the sake of simplicity, for example, when Si, SiH, SiH2, SiH3 and Si2H6 are detected as thin film deposition byproducts by the analyzer (12), 'Σ(amount of some thin film deposition byproducts)' in Equation 3 means the sum of the amounts of some substances among them. For example, it can mean the sum of the amounts of SiH2, SiH3 and Si2H6, excluding Si and SiH. The same applies to the remaining oxygen byproducts, nitrogen byproducts and deposition gases. In other words, 'Σ(amount of some oxygen byproducts)' in Equation 3 means the sum of the amounts of some substances among the oxygen byproducts measured by the analyzer (12), 'Σ(amount of some nitrogen byproducts)' means the sum of the amounts of some substances among the nitrogen byproducts measured by the analyzer (12), and 'Σ(amount of some deposition gases)' means the sum of the amounts of some substances among the deposition gases measured by the analyzer (12).

[0093] Which material data to use among the data measured by the analyzer (12) can be determined through experimentation.

[0094] For the sake of clarity, as mentioned above, for example, the thin film deposition byproducts may include Si, SiH, SiH2, SiH3, Si2H6, SiCl, SiCl2, SiCl3, SiCl4, Si2Cl, Si2Cl2,Si2Cl3, Si2Cl4, SiCl5, C, CH, CH2, CH3, C2H, C2H2, C2H3, C2H4, C2H5, M,Ligand, M(Ligand)x-1, M(Ligand)x-2, M(Ligand)x-3, M(Ligand)x-4, M(Ligand)x-5,M(Ligand)x-6, M(Ligand)x-7, etc. Depending on the thin film, deposition gas, etc. used in the relevant thin film deposition process, the thin film deposition thickness is calculated using one of these substances and compared with the actual thin film deposition thickness. For example, in Equation 1, the results of calculating the thin film deposition thickness by substituting only the amount of ① Si into 'Σ(amount of thin film deposition byproduct)', ② the results of calculating the thin film deposition thickness by substituting only the amount of SiH, ③ the results of calculating the thin film deposition thickness by substituting only the amount of SiH2, ④ the results of calculating the thin film deposition thickness by substituting only the amount of SiH3, ⑤ the results of calculating the thin film deposition thickness by substituting only the amount of Si2H6, etc. are recorded and listed in order of the smallest difference from the actual thin film deposition thickness. The smaller this difference is, the higher the correlation of the corresponding substance. Therefore, the thin film deposition thickness can be calculated using only the top n substances found to have a high correlation among the data measured by the analyzer (12). Here, n is a natural number, and the top few substances to be used can be determined differently as needed. The same applies to the remaining oxygen byproducts, nitrogen byproducts, and deposition gases.

[0095] Additionally, in one embodiment, which material data among the data measured by the analyzer (12) will be used can be determined through correlation regression analysis and deep learning.

[0096] Furthermore, some of the thin film deposition byproducts, oxygen byproducts, nitrogen byproducts, and deposition gases can utilize the entire data measured by the analyzer (12), while others can utilize data on some substances among the data measured by the analyzer (12). In this case, 16 combinations are possible. To facilitate understanding, let's take just one example: Equation 1 can be concretized as Equation 4 below.

[0097] (Formula 4) Thin film deposition thickness = {[a1 × Σ(amount of total thin film deposition byproducts)] × [a2 × Σ(amount of some oxygen byproducts)] × [a3 × Σ(amount of total nitrogen byproducts)] + a4} / [a5 × Σ(amount of some deposition gases)] × a6

[0098] FIG. 2 is a graph showing the correlation between the thin film deposition thickness calculated using the real-time thin film deposition thickness measurement method according to an embodiment of the present invention and the thin film deposition thickness measured using an ellipsometer after the process is performed, with respect to process byproducts measured in the chamber during the SiN thin film deposition process using SiH4 and NH3 gases. Referring to this, the correlation coefficient was 0.97, indicating that the correlation was very high. Therefore, it was confirmed that the thin film deposition thickness could be calculated with high accuracy using the real-time thin film deposition thickness measurement method according to an embodiment of the present invention.

[0099] On the other hand, Fig. 3 is a graph showing the accuracy of the predicted thin film deposition thickness using a formula based on the constants (a1, a2, a3, a4, a5, a6) determined through deep learning for the correlation between the process byproducts measured in the chamber and the thin film deposition thickness measured by an ellipsometer while performing the SiO2 thin film deposition process using SiH4 and N2O gases 69 times. A total of 6 times were performed, and the accuracy was found to be approximately 0.91. Therefore, it can be confirmed that the thin film deposition thickness can be calculated with high accuracy through the real-time thin film deposition thickness measurement method according to an embodiment of the present invention.

[0100] The above-described real-time thin film deposition thickness measurement device and method are merely one of various real-time thin film deposition thickness measurement devices and methods according to various embodiments of the present invention. The technical concept of the present invention is not limited to the above embodiments, and includes all modifications that can be easily made by a person of ordinary skill in the art to which the present invention pertains, as described in the claims.

Claims

1. A chamber where a thin film deposition process is performed; Real-time measurement of gaseous substances within the chamber during the thin film deposition process analyzer; and Based on the data measured by the above analyzer, the thin film thickness is calculated by the formula below. Including a calculation unit for calculating the thickness of the sheet, Real-time thin film deposition thickness measurement device. Thin film deposition thickness = {[a1 × Σ(amount of thin film deposition byproduct)] × [a2 × Σ(oxygen by-product amount)] × [a3 × Σ(nitrogen by-product amount)] + a4} / [a5 × Σ(deposition gas amount) Sheep)] × a6 a1, a2, a3, a4, a5 and a6 are predetermined constants 2. In paragraph 1, Thin film deposition byproducts include Si, SiH, SiH2, SiH3, Si2H6, SiCl, SiCl2, SiCl3,SiCl4, Si2Cl, Si2Cl2, Si2Cl3, Si2Cl4, SiCl5, C, CH, CH2, CH3, C2H, C2H2,C2H3, C2H4, C2H5, M, Ligand, M(Ligand)x-1, M(Ligand)x-2, M(Ligand)x-3, M(Ligand)x-4, M(Ligand)x-5, M(Ligand)x-6 or M(Ligand)x-7, M is a metal atom, Ligands include H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, Alkyls, Alkoxides, Alkyl amides, Amines, Ketones or Sulfonyls. Real-time thin film deposition thickness measurement device.

3. In paragraph 1, Oxygen byproducts include O, O2, CO, CO2, SO, SO2, H2O, oxides of central atoms of precursors used in the thin film deposition process, or oxides of ligands of precursors used in the thin film deposition process. Real-time thin film deposition thickness measurement device.

4. In paragraph 1, Nitrogen byproducts are N, NH, NH2, NO, NO2, precursors used in thin film deposition processes. Nitrogen of the central atom of the nitrogen compound or the ligand of the precursor used in the thin film deposition process Comprising a compound, Real-time thin film deposition thickness measurement device.

5. In paragraph 1, The deposition gas comprises a material composed of SiH4, O2, N2O, NH3, N2, HCDS, 3DMAS, DIPAS, CDS, TiC4,TDMAT, TaCl5, PDMAT, TMA, WF6, WCl6, CpZr, TDMAH, OMCTS, TMCTS or a combination of a central atom and a ligand, wherein the central atom comprises Si, Al, W, Ge, B, Ti, Ta, Zr, Ni, Co, Hf, Pt, Pd, Rh, Fe, Cu, Ga, Zn, In, V, Nb, Cr, Mo, Y, Cd, Sn or Au, and the ligand comprises H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Containing Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, Alkyls, Alkoxides, Alkyl amides, Amines, Ketons or Sulfonyls, Real-time thin film deposition thickness measurement device.

6. In paragraph 1, a1, a2, a3, a4, a5 and a6 are determined through correlation regression analysis and deep learning. Real-time thin film deposition thickness measurement device.

7. In paragraph 1, 'Σ(amount of thin film deposition byproduct)' is the total thin film deposition measured by the above analyzer. The sum of the amounts of by-products, or 'Σ(amount of oxygen by-product)' is the sum total of the amount of all oxygen by-products measured by the above analyzer, or 'Σ(amount of nitrogen by-product)' is the sum total of the amount of all nitrogen by-products measured by the above analyzer, or 'Σ(amount of deposition gas)' is the sum total of the amount of the entire deposition gas measured by the above analyzer. Real-time thin film deposition thickness measurement device.

8. In paragraph 1, 'Σ(amount of thin film deposition byproduct)' is the amount of thin film deposition byproduct measured by the above analyzer. The sum of the amounts of some substances in water, or 'Σ(amount of oxygen byproduct)' is a portion of the oxygen byproduct measured by the above analyzer. The sum of the quantities of matter, or 'Σ(amount of nitrogen by-product)' is a portion of the nitrogen by-product measured by the above analyzer. The sum of the quantities of matter, or 'Σ(amount of deposition gas)' is a portion of the deposition gas measured by the above analyzer. The positive sum of, Real-time thin film deposition thickness measurement device.

9. In paragraph 8, Some of the above substances are the top n substances that have been found to have high correlation through experiments. Including quality, n is a predetermined natural number, Real-time thin film deposition thickness measurement device.

10. In paragraph 8, Some of the above substances are determined through correlation regression analysis and deep learning. Real-time thin film deposition thickness measurement device.

11. A step of performing a thin film deposition process in a chamber; Using an analyzer, the gaseous substances in the chamber can be measured in real time during the thin film deposition process. a step of measuring; and Using the operation unit, the following numbers are calculated based on the data measured by the above analyzer: Comprising a step of calculating a thin film deposition thickness by a formula, Real-time measurement method for thin film deposition thickness. Thin film deposition thickness = {[a1 × Σ(amount of thin film deposition byproduct)] × [a2 × Σ(oxygen by-product amount)] × [a3 × Σ(nitrogen by-product amount)] + a4} / [a5 × Σ(deposition gas amount) Sheep)] × a6 a1, a2, a3, a4, a5 and a6 are predetermined constants 12. In paragraph 11, Thin film deposition byproducts include Si, SiH, SiH2, SiH3, Si2H6, SiCl, SiCl2, SiCl3, SiCl4, Si2Cl, Si2Cl2, Si2Cl3, Si2Cl4, SiCl5, C, CH, CH2, CH3, C2H, C2H2, C2H3, C2H4, C2H5, M, Ligand, M(Ligand)x-1, M(Ligand)x-2, M(Ligand)x-3, M(Ligand)x- 4, including M(Ligand)x-5, M(Ligand)x-6 or M(Ligand)x-7, M is a metal atom, Ligand is H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, Alkyls, Containing Alkoxides, Alkyl amides, Amines, Ketones or Sulfonyls, Real-time measurement method for thin film deposition thickness.

13. In paragraph 11, Oxygen byproducts are O, O2, CO, CO2, SO, SO2, H2O, which are used in thin film deposition processes. The oxide of the central atom of the precursor or the ligand of the precursor used in the thin film deposition process. containing oxides, Real-time measurement method for thin film deposition thickness.

14. In paragraph 11, Nitrogen byproducts are N, NH, NH2, NO, NO2, precursors used in thin film deposition processes. Nitrogen of the central atom of the nitrogen compound or the ligand of the precursor used in the thin film deposition process Comprising a compound, Real-time measurement method for thin film deposition thickness.

15. In paragraph 11, Deposition gases are SiH4, O2, N2O, NH3, N2, HCDS, 3DMAS, DIPAS, CDS, TiC4, TDMAT, TaCl5, PDMAT, TMA, WF6, WCl6, CpZr, TDMAH, OMCTS, TMCTS or central atom and a substance comprising a combination of ligands, The central atoms are Si, Al, W, Ge, B, Ti, Ta, Zr, Ni, Co, Hf, Pt, Pd, Rh, Fe, Contains Cu, Ga, Zn, In, V, Nb, Cr, Mo, Y, Cd, Sn or Au, Ligands are H, F, Cl, Br, I, H, O, S, NH3, CH3, CF3, OH, H2O, CO, Cyclophenyl, Methylanmine, Dimethlyamine, Isopropylamine, Hexafluoroacetylacetonate, Methanol, Ethanol, Propanol, Butanol, Alkyls, Containing Alkoxides, Alkyl amides, Amines, Ketones or Sulfonyls, Real-time measurement method for thin film deposition thickness.

16. In paragraph 11, a1, a2, a3, a4, a5 and a6 are determined through correlation regression analysis and deep learning. Real-time measurement method for thin film deposition thickness.

17. In paragraph 11, 'Σ(amount of thin film deposition byproduct)' is the total thin film deposition measured by the above analyzer. The sum of the amounts of by-products, or 'Σ(amount of oxygen byproduct)' is the total amount of oxygen byproduct measured by the above analyzer. The sum of the two, or 'Σ(amount of nitrogen byproduct)' is the total amount of nitrogen byproduct measured by the above analyzer. The sum of the two, or 'Σ(amount of deposition gas)' is the amount of total deposition gas measured by the above analyzer. The total, Real-time measurement method for thin film deposition thickness.

18. In paragraph 11, 'Σ(amount of thin film deposition byproduct)' is the amount of thin film deposition byproduct measured by the above analyzer. The sum of the amounts of some substances in water, or 'Σ(amount of oxygen byproduct)' is a portion of the oxygen byproduct measured by the above analyzer. The sum of the quantities of matter, or 'Σ(amount of nitrogen by-product)' is a portion of the nitrogen by-product measured by the above analyzer. The sum of the quantities of matter, or 'Σ(amount of deposition gas)' is a portion of the deposition gas measured by the above analyzer. The positive sum of, Real-time measurement method for thin film deposition thickness.

19. In paragraph 18, Some of the above substances are the top n substances that have been found to have high correlation through experiments. Including quality, n is a predetermined natural number, Real-time measurement method for thin film deposition thickness.

20. In paragraph 18, Some of the above substances are determined through correlation regression analysis and deep learning. Real-time measurement method for thin film deposition thickness.

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