Preparation method for preparing micro-nano structure pattern on surface of 3D cambered-surface substrate

Abstract

Disclosed in the present invention is a preparation method for preparing a micro-nano structure pattern on the surface of a 3D cambered-surface substrate, comprising: placing a 3D cambered-surface substrate on a spin-coating platform provided with a cambered-surface boss, and spin-coating a layer of nanoimprint resist on the surface of the 3D cambered-surface substrate; placing the 3D cambered-surface substrate on an imprinting platform provided with a cambered-surface boss, and using a PDMS stamp having a reverse structure to imprint the nanoimprint-resist coated surface of the 3D cambered-surface substrate so as to form a mask having a micro-nano structure pattern; placing, on an etching tray provided with a cambered-surface boss, the 3D cambered-surface substrate provided with the mask having the micro-nano structure pattern, and then placing the etching tray into an ICP dry-etching device for etching; and cleaning the etched 3D cambered-surface substrate, wherein the outer contour of each cambered-surface boss is matched with that of the 3D cambered-surface substrate. The present invention can implement preparation of a micro-nano structure pattern on the surface of a 3D cambered-surface substrate, can achieve mass production, and has controllable costs.

Description

Method for preparing micro-nano structure pattern on 3D curved surface substrate TECHNICAL FIELD

[0001] The present application belongs to the technical field of nanoimprint, and particularly relates to a method for preparing a micro-nano structure pattern on a 3D curved surface substrate. BACKGROUND

[0002] In today's consumer electronics market, touch and optical elements are widely used in various consumer electronic equipment. As the most direct information transmission medium between users and electronic products, the pursuit of sensory and experience of optical elements is getting higher and higher over time, and the price is gradually decreasing, which shows that any visual and tactile device for consumer electronics applications must have high cost performance.

[0003] At present, the functions and decoration applications of optical screens or back covers of consumer electronic products such as mobile phones and tablets are basically achieved by covering the substrate with certain media or using wet etching to achieve certain optical property effects. The structure adjustability is limited and most of the substrates are planar, which has certain structure and target limitations. SUMMARY

[0004] In order to solve the above technical problems, the present application provides a method for preparing a micro-nano structure pattern on a 3D curved surface substrate.

[0005] In order to achieve the above purpose, the technical scheme of the present application is as follows:

[0006] The present application discloses a method for preparing a micro-nano structure pattern on a 3D curved surface substrate, comprising:

[0007] Step S1: placing the 3D curved surface substrate on a spin coating platform with an arc convex platform, and spin coating a layer of nanoimprint glue on the surface of the 3D curved surface substrate;

[0008] Step S2: placing the 3D curved surface substrate on an imprinting platform with an arc convex platform, and using a PDMS soft film with a reverse structure to imprint the nanoimprint glue surface of the 3D curved surface substrate to form a mask of the micro-nano structure pattern;

[0009] Step S3: placing the 3D curved surface substrate with the mask of the micro-nano structure pattern on an etching tray with an arc convex platform, and then placing the etching tray into an ICP dry etching device for etching;

[0010] Step S4: cleaning the 3D curved surface substrate after etching;

[0011] Wherein: the shape of the arc convex platform matches the outer contour of the 3D curved surface substrate.

[0012] On the basis of the above technical scheme, the following improvements can also be made:

[0013] As a preferred solution, step S1 specifically comprises:

[0014] Step S1.1: placing the 3D curved substrate on the spin-coating platform with the curved convex platform;

[0015] Step S1.2: clockwise rotating the spin-coating platform to spin-coat the nano-imprint glue on the surface of the 3D curved substrate;

[0016] Step S1.3: counterclockwise rotating the spin-coating platform to spin-coat the nano-imprint glue on the surface of the 3D curved substrate;

[0017] Step S1.4: repeating steps S1.2-S1.3 until the nano-imprint glue on the surface of the 3D curved substrate reaches a set value.

[0018] As a preferred solution, the hardness of the PDMS soft film is 35-50 Mohs, the thickness of the PDMS soft film is 3-6 mm, and the weight of the PDMS soft film is 90-110 g.

[0019] As a preferred solution, a limiting edge is further arranged on the imprinting platform, the limiting edge is distributed outside the curved convex platform of the imprinting platform, the height of the limiting edge is higher than the height of the curved convex platform, and the limiting edge is used to push against the edge portion of the PDMS soft film.

[0020] As a preferred solution, at least two curved convex platforms are distributed on the etching tray.

[0021] As a preferred solution, a plurality of positioning columns are distributed on the outer periphery of the curved convex platform of each etching tray.

[0022] As a preferred solution, when the material of the 3D curved substrate is GG5 type glass, the BCl3 gas flow range input into the ICP dry etching equipment is 50-150 sccm, the CHF3 gas flow is 25-100 sccm, the O2 gas flow is 0-20 sccm, the CHF3 / BCl3 gas input flow ratio range is 30%-75%, and the O2 / CHF3 gas input flow ratio range is 0-15%;

[0023] The upper electrode power in the ICP dry etching equipment is 400-1600 W, the lower electrode power is 100-1000 W, the internal pressure control range is 2-6 mT, the cooling temperature control range is -10-40℃, and the He gas pressure control range is 4-8 T.

[0024] As a preferred scheme, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow input into the ICP dry etching equipment ranges from 50sccm to 120sccm, the CHF3 gas flow ranges from 25sccm to 80sccm, the O2 gas flow ranges from 0sccm to 20sccm, the CHF3 / BCl3 gas input flow ratio ranges from 30% to 75%, and the O2 / CHF3 gas input flow ratio ranges from 0 to 15%;

[0025] The upper electrode power in the ICP dry etching equipment ranges from 1000W to 1500W, the lower electrode power ranges from 200W to 800W, the internal pressure control range is 3.8mT to 7.2mT, the cooling temperature control range is 20℃ to 40℃, and the He gas pressure control range is 3T to 8T.

[0026] As a preferred scheme, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow input into the ICP dry etching equipment ranges from 50sccm to 120sccm, the CHF3 gas flow ranges from 25sccm to 80sccm, the O2 gas flow ranges from 0sccm to 20sccm, the CHF3 / BCl3 gas input flow ratio ranges from 30% to 75%, and the O2 / CHF3 gas input flow ratio ranges from 0 to 15%;

[0027] The upper electrode power in the ICP dry etching equipment ranges from 800W to 1200W, the lower electrode power ranges from 200W to 800W, the internal pressure control range is 3.8mT to 6.0mT, the cooling temperature control range is 20℃ to 40℃, and the He gas pressure control range is 3T to 8T.

[0028] As a preferred scheme, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow input into the ICP dry etching equipment ranges from 50sccm to 120sccm, the CHF3 gas flow ranges from 25sccm to 80sccm, the O2 gas flow ranges from 0sccm to 20sccm, the CHF3 / BCl3 gas input flow ratio ranges from 30% to 75%, and the O2 / CHF3 gas input flow ratio ranges from 0 to 15%;

[0029] The upper electrode power in the ICP dry etching equipment ranges from 1000W to 1500W, the lower electrode power ranges from 200W to 800W, the internal pressure control range is 2.3mT to 5.0mT, the cooling temperature control range is 25℃ to 45℃, and the He gas pressure control range is 3T to 8T.

[0030] This invention discloses a method for fabricating micro-nano structure patterns on the surface of a 3D curved substrate. The method utilizes nanoimprinting to replicate the target micro-nano structure pattern onto the 3D curved substrate, and then uses plasma etching to transfer the nanoimprinted mask pattern structure onto the surface of the 3D curved substrate. This allows the substrate to achieve better optical properties, tactile and visual effects, while achieving full-process mass production and controllable costs. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 is a flowchart of the preparation method provided in an embodiment of the present invention.

[0033] Figure 2 is a schematic diagram of the spin coating platform provided in an embodiment of the present invention.

[0034] Figure 3 is a top view of the spin coating platform provided in an embodiment of the present invention.

[0035] Figure 4 is a cross-sectional view along the AA direction in Figure 3.

[0036] Figure 5 is a top view of the imprinting platform provided in an embodiment of the present invention.

[0037] Figure 6 is a top view of the etching tray provided in an embodiment of the present invention.

[0038] Wherein: 1-spin coating platform, 11-arc-surface boss;

[0039] 2-Imprinting platform, 21-Curved boss, 22-Limiting edge;

[0040] 3-Etched tray, 31-Curved boss, 32-Positioning post. Detailed Implementation

[0041] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0042] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] In addition, the expression "comprising" elements is an "open" expression, which only means that the corresponding components or steps exist, and should not be interpreted as excluding additional components or steps.

[0044] To achieve the purpose of the present application, in some embodiments of the preparation method of the micro-nano structure pattern on the surface of the 3D curved surface substrate, as shown in FIG. 1, the preparation method comprises:

[0045] Step S1: placing the 3D curved surface substrate (such as a substrate with downward curved surfaces on four sides, with larger curved surface radius on two long sides and lower curved surface radius on two short sides) on the spin coating platform 1 with the curved surface boss 11, and spin coating a layer of nanoimprint glue on the surface of the 3D curved surface substrate;

[0046] Step S2: placing the 3D curved surface substrate on the imprinting platform 2 with the curved surface boss 21, and using the PDMS soft film with inverse structure to perform imprinting on the nanoimprint glue surface of the 3D curved surface substrate to form a mask of the micro-nano structure pattern;

[0047] Step S3: placing the 3D curved surface substrate with the mask of the micro-nano structure pattern on the etching tray 3 with the curved surface boss 31, and then placing the etching tray into the ICP dry etching equipment for etching;

[0048] Step S4: cleaning the 3D curved surface substrate after etching;

[0049] Wherein: the shape of the curved surface boss matches the 3D curved surface substrate. It is worth noting that, due to the lower curved surface radius of the two short sides of the substrate, it can be compatible with the plane. In the design of the curved surface boss, only the corresponding curved surfaces are designed on the two long sides of the curved surface boss.

[0050] The material of the 3D curved surface substrate includes but is not limited to glass, sapphire, quartz, aluminum, etc. The pattern structure line width features include 0.05-5um, and the depth features include 0.08-5um array or non-array hole / column micro-nano structure pattern.

[0051] Before step S1 is performed, the 3D curved surface substrate needs to be cleaned.

[0052] In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same, and the difference lies in that step S1 specifically comprises:

[0053] Step S1.1: placing the 3D curved surface substrate on the spin coating platform 1 with the curved surface boss 11, as shown in FIGS. 2-4;

[0054] Step S1.2: rotating the spin coating platform 1 clockwise to spin coat the nanoimprint glue on the surface of the 3D curved surface substrate;

[0055] Step S1.3: rotate the spin-coating platform 1 counterclockwise to spin-coat the nanoimprint glue on the 3D curved surface of the substrate;

[0056] Step S1.4: repeat steps S1.2-S1.3 until the nanoimprint glue on the 3D curved surface of the substrate reaches a set value.

[0057] Step S1 applies one layer of nanoimprint glue on the 3D curved surface of the substrate. In order to ensure the uniformity of the glue coating on the 3D curved surface of the substrate, a special spin-coating platform is designed. The curved boss is provided on the spin-coating platform, and the 3D curved substrate is supported by the curved boss. And the clockwise and counterclockwise spin-coating method is adopted to ensure that all curved surfaces of the 3D curved substrate can be attached with a layer of nanoimprint glue.

[0058] In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same, and the difference lies in that step S2 is used to realize nanoimprinting.

[0059] Firstly, before nanoimprinting, a PDMS soft film needs to be prepared.

[0060] After mixing and stirring the A / B type silica gel at a ratio of 1:1 for 40-90 min, the mixture is placed in an environment with temperature 23±2℃ and humidity 50%±5% for 2-3 hours. Then, the PDMS soft film is used to copy the pattern of the source design template structure, so as to form the reverse structure of the source design pattern on the PDMS soft film.

[0061] Then, through the nanoimprinting process, the reverse structure on the PDMS soft film is used to transfer the pattern to form the original design pattern structure on the 3D curved surface of the substrate.

[0062] Because the substrate has a 3D curved shape, the four edges are curved, and it is difficult to cover the curved pattern on the curved surface by using the conventional planar substrate imprinting process. The hardness of the PDMS soft film is reduced to 35-50 Mohs hardness, the thickness of the PDMS soft film is 3-6 mm, and the weight of the PDMS soft film is 90-110 g (the diameter of the PDMS soft film is 250 mm).

[0063] As shown in FIG. 5, the curved boss 21 is provided on the imprinting platform 2, and the 3D curved substrate is supported by the curved boss 21.

[0064] Further, two limiting edges 22 are also provided on the imprinting platform 2, and the two limiting edges 22 are respectively distributed on the outer sides of the opposite two short edges of the curved boss 21 of the imprinting platform.

[0065] In the embossing, the PDMS soft film cavity is pressed once 0-5 Kap, and the second time is increased to 15-45 Kap, the embossing platform rises at a low speed of 0.2-2 mm / s, the film is removed at a low speed of 0.1-1.5 mm / s, the pressure increasing position is 49 mm, the target position is 50 mm, and the 3D curved surface substrate can be fully covered with pattern embossing transfer by using the embossing equipment process.

[0066] Further, the height of the limiting edge 22 is higher than the height of the curved surface boss 21, and the limiting edge 22 can push against the edge part of the PDMS soft film, preventing the soft film edge from being too concave when the second pressure is increased and the platform rises to the highest position, so that the soft film in the middle region is pulled and deformed, thereby ensuring that the pattern can be accurately transferred and embossed.

[0067] In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same, and the difference is that, as shown in Figure 6, six curved surface bosses 31 are distributed on the etching tray 3. Of course, in other embodiments, the number of curved surface bosses 31 on the etching tray 3 can be other numbers, such as 2, 3, 4, 5, etc.

[0068] Four positioning columns 32 are distributed on the outer periphery of each etching tray curved surface boss 31.

[0069] The material of the etching tray 3 and the positioning column 32 can be, but is not limited to, silicon carbide with good thermal conductivity. The etching tray 3 is used to carry out bearing etching on the 3D curved surface substrate to prevent damage to the edge and pattern structure of the 3D curved surface substrate.

[0070] In some embodiments, when the material of the 3D curved surface substrate is GG5 type glass, the BCl3 gas flow range input into the ICP dry etching equipment is 50-150 sccm, the CHF3 gas flow is 25-100 sccm, the O2 gas flow is 0-20 sccm, the CHF3 / BCl3 gas input flow ratio range is 30%-75%, and the O2 / CHF3 gas input flow ratio range is 0-15%;

[0071] The upper electrode power in the ICP dry etching equipment is 400-1600 W, the lower electrode power is 100-1000 W, the internal pressure control range is 2-6 mT, the cooling temperature control range is -10-40℃, and the He gas pressure control range is 4-8T.

[0072] In some embodiments, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow rate in the ICP dry etching device is 50-120 sccm, the CHF3 gas flow rate is 25-80 sccm, the O2 gas flow rate is 0-20 sccm, the CHF3 / BCl3 gas input flow rate ratio is 30-75%, and the O2 / CHF3 gas input flow rate ratio is 0-15%;

[0073] The upper electrode power in the ICP dry etching device is 1000-1500 W, the lower electrode power is 200-800 W, the internal pressure control range is 3.8-7.2 mT, the cooling temperature control range is 20-40°C, and the He gas pressure control range is 3-8T.

[0074] In some embodiments, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow rate in the ICP dry etching device is 50-120 sccm, the CHF3 gas flow rate is 25-80 sccm, the O2 gas flow rate is 0-20 sccm, the CHF3 / BCl3 gas input flow rate ratio is 30-75%, and the O2 / CHF3 gas input flow rate ratio is 0-15%;

[0075] The upper electrode power in the ICP dry etching device is 800-1200 W, the lower electrode power is 200-800 W, the internal pressure control range is 3.8-6.0 mT, the cooling temperature control range is 20-40°C, and the He gas pressure control range is 3-8T.

[0076] In some embodiments, when the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow rate in the ICP dry etching device is 50-120 sccm, the CHF3 gas flow rate is 25-80 sccm, the O2 gas flow rate is 0-20 sccm, the CHF3 / BCl3 gas input flow rate ratio is 30-75%, and the O2 / CHF3 gas input flow rate ratio is 0-15%;

[0077] The upper electrode power in the ICP dry etching device is 1000-1500 W, the lower electrode power is 200-800 W, the internal pressure control range is 2.3-5.0 mT, the cooling temperature control range is 25-45°C, and the He gas pressure control range is 3-8T.

[0078] The application discloses a preparation method of micro-nano structure patterns on a 3D curved surface substrate, which utilizes nano-imprinting to copy target micro-nano structure patterns onto the 3D curved surface substrate, and then utilizes plasma etching to transfer the nano-imprinting mask pattern structure to the surface of the 3D curved surface substrate, so that the substrate achieves better optical properties, touch and visual effects, and realizes full-scale production and controllable cost.

[0079] The above shows and describes the basic principles and main features of the application and the advantages of the application. Those skilled in the art should understand that the application is not limited to the above examples, and the above examples and descriptions in the specification are only illustrative of the principles of the application. Without departing from the spirit and scope of the application, various changes and improvements can be made to the application, and these changes and improvements all fall within the scope of the claimed application. The scope of the application is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a micro-nano structure pattern on a 3D curved surface of a substrate, characterized in that, The method comprises the following steps: Step S1: placing the 3D curved surface substrate on a spin-coating platform with a curved surface boss, and spin-coating a layer of nanoimprint glue on the surface of the 3D curved surface substrate; Step S2: placing the 3D curved surface substrate on an imprinting platform with a curved surface boss, and imprinting the nanoimprint glue surface of the 3D curved surface substrate with a PDMS soft film with a reverse structure to form a mask of a micro-nano structure pattern; Step S3: placing the 3D curved surface substrate with the mask of the micro-nano structure pattern on an etching tray with a curved surface boss, and then placing the etching tray into an ICP dry etching device for etching; Step S4: cleaning the 3D curved surface substrate after etching. The shape of the curved surface boss matches the outer contour of the 3D curved surface substrate.

2. The production method according to claim 1, characterized by, The step S1 specifically comprises the following steps: Step S1.1: placing the 3D curved surface substrate on a spin-coating platform with a curved surface boss; Step S1.2: rotating the spin-coating platform clockwise to spin-coat the nanoimprint glue on the surface of the 3D curved surface substrate; Step S1.3: rotating the spin-coating platform counterclockwise to spin-coat the nanoimprint glue on the surface of the 3D curved surface substrate; Step S1.4: repeating steps S1.2-S1.3 until the nanoimprint glue on the surface of the 3D curved surface substrate reaches a set value.

3. The preparation method according to claim 1, characterized in that, The hardness of the PDMS soft film is 35-50 Mohs, the thickness of the PDMS soft film is 3-6 mm, and the weight of the PDMS soft film is 90-110 g.

4. The method of claim 1, wherein, The imprinting platform is further provided with a limiting edge, which is distributed on the outer side of the curved surface boss of the imprinting platform and has a height higher than that of the curved surface boss, and the limiting edge is used to support the edge portion of the PDMS soft film.

5. The preparation method according to claim 1, characterized in that, At least two curved surface bosses are distributed on the etching tray.

6. The production method according to claim 5, wherein A plurality of positioning columns are distributed on the outer periphery of the curved surface boss of each etching tray.

7. The method of any one of claims 1-6, wherein, When the material of the 3D curved surface substrate is GG5 type glass, the BCl3 gas flow range input into the ICP dry etching device is 50-150 sccm, the CHF3 gas flow is 25-100 sccm, the O2 gas flow is 0-20 sccm, the CHF3 / BCl3 gas input flow ratio range is 30%-75%, and the O2 / CHF3 gas input flow ratio range is 0-15%; The upper electrode power of the ICP dry etching device is 400-1600 W, the lower electrode power is 100-1000 W, the internal pressure control range is 2-6 mT, the cooling temperature control range is -10-40℃, and the He gas pressure control range is 4-8 T.

8. The method of any one of claims 1-6, wherein, When the material of the 3D curved surface substrate is sapphire, the BCl3 gas flow range input into the ICP dry etching device is 50-120 sccm, the CHF3 gas flow is 25-80 sccm, the O2 gas flow is 0-20 sccm, the CHF3 / BCl3 gas input flow ratio range is 30%-75%, and the O2 / CHF3 gas input flow ratio range is 0-15%. The ICP dry etching equipment has the following parameters: the upper electrode power is 1000-1500W, the lower electrode power is 200-800W, the internal pressure control range is 3.8-7.2mT, the cooling temperature control range is 20-40℃, and the He gas pressure control range is 3-8T.

9. The method of any one of claims 1-6, wherein, When the material of the 3D curved surface substrate is quartz, the ICP dry etching equipment has the following parameters: the BCl3 gas flow range is 50-120sccm, the CHF3 gas flow range is 25-80sccm, the CF4 gas flow range is 25-80sccm, the O2 gas flow range is 0-20sccm, the (CHF3+CF4) / BCl3 gas input flow ratio range is 30-75%, and the O2 / (CHF3+CF4) gas input flow ratio range is 0-15%; The ICP dry etching equipment has the following parameters: the upper electrode power is 800-1200W, the lower electrode power is 200-800W, the internal pressure control range is 3.8-6.0mT, the cooling temperature control range is 20-40℃, and the He gas pressure control range is 3-8T.

10. The method of any one of claims 1-6, wherein, When the material of the 3D curved surface substrate is metal aluminum, the ICP dry etching equipment has the following parameters: the Cl2 gas flow range is 25-80sccm, the BCl3 gas flow range is 50-120sccm, and the Cl2 / BCl3 gas input flow ratio range is 50-120%; The ICP dry etching equipment has the following parameters: the upper electrode power is 1000-1500W, the lower electrode power is 200-800W, the internal pressure control range is 2.3-5.0mT, the cooling temperature control range is 25-45℃, and the He gas pressure control range is 3-8T.

Images