Film forming method, film forming apparatus, and semiconductor device

Abstract

The present invention efficiently forms a two-dimensional material thin film having satisfactory crystallinity. A film forming method according to the present invention includes: a step for forming a first two-dimensional material thin film on a surface of a substrate; a step for forming a first insulating film on a surface of the first two-dimensional material thin film; and a step for forming a second two-dimensional material thin film on a surface of the first insulating film. As a result, a crystalline insulating film imparted with crystalline information of a two-dimensional material thin film is formed. By forming a two-dimensional material thin film on a crystalline insulating film, a two-dimensional material thin film having good crystallinity can be formed.

Description

Film formation method, film formation apparatus, and semiconductor device

[0001] The present disclosure relates to a film formation method, a film formation apparatus, and a semiconductor device.

[0002] Patent Document 1 discloses a technique relating to a precursor and a method for forming a thin film containing Mo or W by atomic layer deposition. Patent Document 1 discloses a method for depositing a Mo or W-containing thin film on a substrate, and various methods are disclosed, such as a method for depositing a Mo or W-containing thin film directly on the substrate, or a method for optionally performing a pretreatment process on the substrate surface before deposition. According to the technique disclosed in Patent Document 1, a 2D (two-dimensional) Mo or W dichalcogenide film is deposited, which has unique electronic properties that are useful for miniaturizing semiconductor devices.

[0003] Japanese Patent Application Publication No. 2022-101619

[0004] The technology according to the present disclosure efficiently forms two-dimensional material thin films with good crystallinity.

[0005] One aspect of the present disclosure includes forming a first two-dimensional material thin film on a surface of a substrate, forming a first insulating film on the surface of the first two-dimensional material thin film, and forming a second two-dimensional material thin film on the surface of the first insulating film.

[0006] According to the technology of the present disclosure, a two-dimensional material thin film with good crystallinity can be efficiently formed.

[0007] It is a plan view showing an outline of the configuration of a wafer processing apparatus according to the present embodiment. It is a schematic explanatory diagram of a method for forming an insulating film. It is a schematic explanatory diagram of a method for forming a two-dimensional material thin film. It is a schematic explanatory diagram of another method for forming a two-dimensional material thin film.

[0008] The technology disclosed herein efficiently forms two-dimensional material thin films with excellent crystallinity. Hereinafter, a wafer processing apparatus serving as a substrate processing apparatus for manufacturing semiconductor devices according to the present embodiment and a method for forming two-dimensional material thin films used in semiconductor devices will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Wafer Processing Apparatus> First, a wafer processing apparatus according to this embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of a wafer processing apparatus 1 according to this embodiment. The wafer processing apparatus 1 is capable of performing various film formation processes on a wafer W as a substrate, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, and atomic layer deposition (ALD), and functions as, for example, a film formation apparatus.

[0010] 1, the wafer processing apparatus 1 has a configuration in which an atmospheric section 10 and a reduced pressure section 11 are integrally connected via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired process on a wafer W in an atmospheric pressure atmosphere. The reduced pressure section 11 includes a reduced pressure module that performs a desired process on a wafer W in a reduced pressure atmosphere.

[0011] The load lock modules 20, 21 are provided to connect a loader module 30 (described later) in the atmospheric section 10 to a transfer module 50 (described later) in the reduced pressure section 11 via a gate valve (not shown). The load lock modules 20, 21 are configured to temporarily hold a wafer W. The load lock modules 20, 21 are also configured so that the interior thereof can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

[0012] The atmospheric section 10 has a loader module 30 equipped with a wafer transfer mechanism 40 (described later), and a load port 32 on which a FOUP 31 capable of storing a plurality of wafers W is placed. Note that an orienter module (not shown) for adjusting the horizontal orientation of the wafer W, a storage module (not shown) for storing a plurality of wafers W, and the like may be provided adjacent to the loader module 30.

[0013] The loader module 30 is made up of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five load ports 32 are arranged side by side on one side that constitutes the long side of the housing of the loader module 30. The load lock modules 20 and 21 are arranged side by side on the other side that constitutes the long side of the housing of the loader module 30.

[0014] A wafer transfer mechanism 40 for transferring a wafer W is provided inside the loader module 30. The wafer transfer mechanism 40 includes a transfer arm 41 that holds and moves the wafer W, a rotary table 42 that rotatably supports the transfer arm 41, and a rotary table 43 on which the rotary table 42 is mounted. Also, a guide rail 44 extending in the longitudinal direction of the loader module 30 is provided inside the loader module 30. The rotary table 43 is provided on the guide rail 44, and the wafer transfer mechanism 40 is configured to be movable along the guide rail 44.

[0015] The decompression unit 11 has a transfer module 50 that simultaneously transfers wafers W, and a processing module 60 that performs desired processing on the wafers W transferred from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere. A plurality of processing modules 60, for example, six processing modules 60, are provided for one transfer module 50. In the following description, the six processing modules 60 may be referred to as processing modules 60a to 60f, respectively. Note that the number and arrangement of the processing modules 60 are not limited to those in this embodiment and can be set as desired.

[0016] The transfer module 50 is made of a housing having a polygonal interior (pentagonal in the illustrated example), and as described above, is connected to the load lock modules 20 and 21. The transfer module 50 transfers the wafer W loaded into the load lock module 20 to one of the processing modules 60, where the wafer W is subjected to the desired processing, and then transfers the wafer W to the atmospheric section 10 via the load lock module 21.

[0017] The processing modules 60 perform various film formation processes, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, and atomic layer deposition (ALD). The processing modules 60 can be arbitrarily selected to perform processes according to the purpose of wafer processing. The processing modules 60 are connected to the transfer module 50 via gate valves 61. In the following description, the six gate valves 61 may be referred to as gate valves 61a to 61f for the processing modules 60a to 60f, respectively.

[0018] A wafer transfer mechanism 70 for transferring a wafer W is provided inside the transfer module 50. The wafer transfer mechanism 70 includes a transfer arm 71 that holds and moves the wafer W, a rotary table 72 that rotatably supports the transfer arm 71, and a rotary table 73 on which the rotary table 72 is mounted. Also, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the transfer module 50. The rotary table 73 is provided on the guide rail 74, and the wafer transfer mechanism 70 is configured to be movable along the guide rail 74.

[0019] In the transfer module 50, the transfer arm 71 receives the wafer W held in the load lock module 20 and transfers it to the processing module 60. The transfer arm 71 also holds the wafer W that has been subjected to the desired processing and transfers it to the load lock module 21.

[0020] The wafer processing apparatus 1 described above is provided with at least one controller (not shown). The controller processes computer-executable instructions that cause the wafer processing apparatus 1 to perform the various processes described in this disclosure. The controller may be configured to control each element of the wafer processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller may be included in the wafer processing apparatus 1. The controller may include a processor, a storage unit, and a communication interface. The controller may be implemented, for example, by a computer. The processor may be configured to read from the storage unit a program that provides logic or routines that enable the various control operations to be performed, and to execute the read program to perform the various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processor for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processor may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0021] Next, wafer processing performed using the wafer processing apparatus 1 configured as above will be described.

[0022] First, the FOUP 31 containing a plurality of wafers W is placed on the load port 32 .

[0023] Next, the wafer W is removed from the FOUP 31 by the wafer transfer mechanism 40 and loaded into the load lock module 20. Once the wafer W is loaded into the load lock module 20, the inside of the load lock module 20 is sealed and depressurized. Thereafter, the inside of the load lock module 20 and the inside of the transfer module 50 are connected to each other.

[0024] Next, the wafer W is held by the wafer transfer mechanism 70 and transferred from the load lock module 20 to the transfer module 50 .

[0025] Next, the gate valve 61 is opened, and the wafer W is loaded into the processing module 60 by the wafer transfer mechanism 70. Thereafter, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 60. An example of the processing performed on the wafer W will be described later.

[0026] Next, the gate valve 61 is opened, and the wafer W is unloaded from the processing module 60 by the wafer transfer mechanism 70. Thereafter, the gate valve 61 is closed.

[0027] Next, the wafer W is loaded into the load lock module 21 by the wafer transfer mechanism 70. When the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. Thereafter, the inside of the load lock module 21 and the inside of the loader module 30 are connected to each other.

[0028] Next, the wafer W is held by the wafer transfer mechanism 40, and is returned from the load lock module 21 to the FOUP 31 via the loader module 30 and accommodated therein. In this way, a series of wafer processing steps in the wafer processing apparatus 1 is completed.

[0029] <Method of forming first two-dimensional material thin film, first insulating film> Fig. 2 is a schematic explanatory diagram of a method of forming an insulating film. First, as shown in Fig. 2(a), a wafer W, which is, for example, a Si substrate, is placed in a processing module 60. A silicon oxide film (not shown) may be formed on the surface of the wafer W as a base. Then, as shown in Fig. 2(b), a silicon oxide film (not shown) is formed on the wafer W. ２The first two-dimensional material thin film 100 according to this embodiment may be any film containing a transition metal such as Mo or W, and may be a sulfide, selenide, or telluride thin film of Mo or W, and specifically, MoS ２ , MoSe ２ , W.S. ２ It may be.

[0030] The first two-dimensional material thin film 100 may be formed by any method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD). Alternatively, the first two-dimensional material thin film 100 may be formed by first depositing a transition metal-containing film containing a transition metal such as Mo or W, and then annealing the transition metal-containing film in a chalcogen atmosphere using a chalcogen source.

[0031] The material of the transition metal-containing film may be any material containing a transition metal such as Mo or W, and may be an oxide containing Mo or W, or a nitride containing Mo or W, for example, MoO ３ , Mo ２ N.W. ２ O ３ , WN. The conditions for the annealing process in the chalcogen atmosphere are not particularly limited. For example, in a module that performs the annealing process among the multiple process modules 60, the inside of a process chamber into which the target wafer W is loaded may be purged with Ar, and a chalcogen source may be continuously supplied from the start of temperature rise to perform the annealing process. The chalcogen source may be any material, and may be, for example, a material containing sulfur (S), selenium (Se), or tellurium (Te) as the chalcogen. Specifically, H ２ S, H ２ Se, H ２ Te is an example.

[0032] 2C, a first insulating film 110 is formed by atomic layer deposition (ALD) on the first two-dimensional material thin film 100. The first insulating film 110 may be any film that can easily impart crystalline information of the first two-dimensional material thin film 100, and may be, for example, an AlO film, a HfO film, or a ZrO film.

[0033] It is known that insulating films such as AlO films, HfO films, and ZrO films usually grow amorphously. However, when such an insulating film is formed on a two-dimensional material thin film, which is a layered film formed with good coverage, the crystalline information of the two-dimensional material thin film is imparted, resulting in the formation of an insulating film with crystallinity. This is thought to be due to van der Waals epitaxy, which aims to form an insulating film with crystallinity.

[0034] <Method of Forming a Two-Dimensional Material Thin Film According to the Present Disclosure> As described above with reference to FIG. 2 , a first two-dimensional material thin film 100 is formed with good coverage on an amorphous wafer W (e.g., a Si substrate), and then a first insulating film 110 is formed thereon by atomic layer deposition (ALD), thereby imparting crystallinity. It is believed that the crystallinity can be improved by further forming a second two-dimensional material thin film 120 on this crystalline first insulating film 110. Therefore, in the formation method according to this embodiment, the first two-dimensional material thin film 100 and the first insulating film 110 are formed on the wafer W as described with reference to FIG. 2 , and then the second two-dimensional material thin film 120 is formed thereon.

[0035] 3A and 3B are schematic explanatory diagrams illustrating a method for forming a two-dimensional material thin film according to this embodiment. First, as shown in FIG. 3A, in a processing module 60, a film of, for example, MoS is formed on a wafer W. ２ 3B, a first two-dimensional material thin film 100 is formed on the first two-dimensional material thin film 100 by atomic layer deposition (ALD).

[0036] 3(c), a second two-dimensional material thin film 120 is formed on the first insulating film 110. The second two-dimensional material thin film 120 is preferably formed of the same material as the first two-dimensional material thin film 100. The second two-dimensional material thin film 120 may be any film containing a transition metal such as Mo or W, and may be a sulfide, selenide, or telluride thin film of Mo or W, specifically MoS ２ , MoSe ２ , W.S. ２ It may be.

[0037] The second two-dimensional material thin film 120 may be formed by any method, including physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Alternatively, the second two-dimensional material thin film 120 may be formed by annealing a transition metal-containing film in a chalcogen atmosphere. If the first insulating film 110 is crystalline, forming the second two-dimensional material thin film 120 on the first insulating film 110 results in a two-dimensional material thin film with improved crystallinity. From the viewpoint of improving crystallinity, the second two-dimensional material thin film 120 is preferably formed at a low temperature, for example, at 700° C. or lower. In this case, atomic layer deposition (ALD) is optimal.

[0038] 3D, a second insulating film 130 is formed on the second two-dimensional material thin film 120 by atomic layer deposition (ALD). The second insulating film 130 may be any film that can easily impart crystalline information of the second two-dimensional material thin film 120, and may be, for example, an AlO film, a HfO film, or a ZrO film. The second insulating film 130 and the first insulating film 110 may be made of different materials or the same material.

[0039] The second two-dimensional material thin film 120 formed in this manner has better crystallinity than a two-dimensional material thin film formed on an amorphous substrate. That is, the second two-dimensional material thin film 120 has better crystallinity than the first two-dimensional material thin film 100. This is thought to be due to van der Waals epitaxy. Two-dimensional material thin films with good crystallinity have excellent electrical properties and are useful for various semiconductor devices. For example, they may be used for transistor channels, logic, nanosheets, etc.

[0040] Furthermore, the structure configured as shown in FIG. 3(d) may be used as a semiconductor device as is. In this case, in addition to the structure described above, a metal film or hBN (boron nitride) may be further stacked. When applied to a transistor as a semiconductor device, for example, the second two-dimensional material thin film 120 may be configured as a channel, and the second insulating film 130 may be a high-dielectric (High-K) film and configured as a gate insulating film. Alternatively, the second insulating film 130 may be removed and replaced with another gate insulating film or metal film, and used as a semiconductor device.

[0041] <Other Methods for Forming Two-Dimensional Material Thin Films> As described with reference to FIG. 3 , when multiple films are stacked, such as a first two-dimensional material thin film 100, a first insulating film 110, a second two-dimensional material thin film 120, and a second insulating film 130, the upper layers tend to have better crystallinity. Therefore, in one embodiment, two-dimensional material thin films and insulating films may be alternately stacked multiple times. For example, in addition to the configuration of FIG. 3 , a third two-dimensional material thin film 140 and a third insulating film 150 may be formed. It is also possible to transfer the formed film to another wafer.

[0042] 4 is a schematic diagram illustrating another method for forming a two-dimensional material thin film according to this embodiment. The diagram illustrates a film formation process starting from a state in which the first two-dimensional material thin film 100, the first insulating film 110, the second two-dimensional material thin film 120, and the second insulating film 130 have already been formed on the wafer W (see FIG. 3).

[0043] 4A and 4B, in a state where a first two-dimensional material thin film 100, a first insulating film 110, a second two-dimensional material thin film 120, and a second insulating film 130 are formed on a wafer W, a third two-dimensional material thin film 140 is formed on the second insulating film 130. Then, a third insulating film 150 is formed on the third two-dimensional material thin film 140 by atomic layer deposition (ALD).

[0044] The third two-dimensional material thin film 140 may be formed by any method, including physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). Alternatively, the third two-dimensional material thin film 140 may be formed by annealing a transition metal-containing film in a chalcogen atmosphere. If the second insulating film 130 is crystalline, forming the third two-dimensional material thin film 140 on the second insulating film 130 results in a two-dimensional material thin film with improved crystallinity. From the viewpoint of improving crystallinity, the third two-dimensional material thin film 140 is preferably formed at a low temperature, for example, at 700° C. or lower. In this case, atomic layer deposition (ALD) is optimal.

[0045] The third two-dimensional material thin film 140 formed in this manner has better crystallinity than the first two-dimensional material thin film 100 and the second two-dimensional material thin film 120. Two-dimensional material thin films with good crystallinity have excellent electrical properties and are useful for various semiconductor devices. For example, they may be used for transistor channels, logic, nanosheets, etc.

[0046] Furthermore, since the crystallinity of the insulating film formed on the two-dimensional material thin film with good crystallinity is also improved, the crystallinity of the third insulating film 150 is better than that of the first insulating film 110 and the second insulating film 130. In this way, by repeating the lamination, a two-dimensional material thin film and an insulating film with better crystallinity are formed.

[0047] Here, the first two-dimensional material thin film 100, which is the bottom layer, is thought to have poor crystallinity and can be easily peeled off. That is, in a state where all films are stacked up to the third insulating film 150 as shown in FIG. 4(c), it is possible to peel off all films from the wafer W and transfer them to another wafer W1 as shown in FIG. 4(d).

[0048] <Effects of the Technique of the Present Disclosure> In the manufacturing process of semiconductor devices, two-dimensional materials are attracting attention as semiconductor materials that will succeed silicon in breaking through the limits of miniaturization. For example, when two-dimensional materials are used as channels of transistors, etc., they are known to have fewer defects on the surface that adversely affect electrical conduction than silicon, etc., and are therefore useful in terms of electrical conduction.

[0049] Specific methods for forming two-dimensional material thin films using two-dimensional materials have not yet been clearly established. Examples include direct film formation on a Si substrate using atomic layer deposition (ALD) (see Patent Document 1), and film formation on a sapphire substrate using high-temperature metalorganic chemical vapor deposition (MOCVD) and then transfer to a Si substrate using a peel-and-transfer technique. Directly depositing a two-dimensional material thin film containing chalcogen on a Si substrate can result in unstable film quality due to reactions between Si and chalcogen. Furthermore, peel-and-transferring a two-dimensional material thin film from a sapphire substrate requires a lot of time and various equipment, posing challenges in terms of manufacturing cost and time.

[0050] When two-dimensional thin films of materials are used for semiconductor devices such as transistor channels, logic, and nanosheets, the electrical properties can be improved by forming films with good crystallinity, so two-dimensional thin films of materials with good crystallinity are required.

[0051] Therefore, according to the method and apparatus for forming a two-dimensional material thin film of the present disclosure, an insulating film is formed on a two-dimensional material thin film, which is a layered film formed with good coverage. This provides crystalline information of the two-dimensional material thin film, and an insulating film with crystallinity is formed. Then, by forming the two-dimensional material thin film on the insulating film with crystallinity, a two-dimensional material thin film with good crystallinity can be formed.

[0052] Furthermore, by repeatedly forming two-dimensional material thin films and insulating films, two-dimensional material thin films and insulating films with better crystallinity can be formed. In particular, by continuously forming each film in the same module, two-dimensional material thin films and insulating films with better crystallinity can be efficiently formed. For example, in forming two-dimensional material thin films, efficiency in manufacturing costs and manufacturing time can be improved.

[0053] In the above description, the wafer processing apparatus 1 can perform various film formation processes on wafers W under various conditions. The number and configuration of the processing modules used are not limited, and each process may be performed in multiple processing modules 60, or multiple processes may be performed in the same module. That is, the formation of a two-dimensional material thin film or insulating film according to the technology disclosed herein may be performed in multiple processing modules 60 within the same wafer processing apparatus 1, or may be performed consecutively in the same processing module 60.

[0054] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0055] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that would be apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0056] The following configuration examples also fall within the technical scope of the present disclosure. (1) A film formation method comprising: forming a first two-dimensional material thin film on a surface of a substrate; forming a first insulating film on the surface of the first two-dimensional material thin film; and forming a second two-dimensional material thin film on the surface of the first insulating film. (2) The film formation method according to (1), in which both the steps of forming the two-dimensional material thin film and the insulating film are performed by atomic layer deposition. (3) The film formation method according to (1) or (2), in which both the steps of forming the two-dimensional material thin film and the insulating film are performed in the same film formation apparatus. (4) The film formation method according to any one of (1) to (3), in which both the steps of forming the two-dimensional material thin film and the insulating film are performed consecutively in the same module. (5) The film formation method according to any one of (1) to (4), further comprising the step of forming a second insulating film on the surface of the second two-dimensional material thin film. (6) The film formation method according to any one of (1) to (5), wherein the two-dimensional material thin film is a sulfide, selenide, or telluride thin film of Mo or W. (7) The film formation method according to any one of (1) to (6), wherein the insulating film is an AlO film, a HfO film, or a ZrO film. (8) A film formation apparatus for forming a two-dimensional material thin film in manufacturing a semiconductor device, comprising: a processing module for forming a two-dimensional material thin film on a surface of a substrate and forming an insulating film on the two-dimensional material thin film; and a controller, wherein the controller executes control including the steps of: forming a first two-dimensional material thin film on the surface of the substrate; forming a first insulating film on the surface of the first two-dimensional material thin film; and forming a second two-dimensional material thin film on the surface of the first insulating film. (9) The film formation apparatus according to (8), wherein the controller executes control including the step of forming a second insulating film on the surface of the second two-dimensional material thin film. (10) A semiconductor device comprising: a first two-dimensional material thin film formed on a surface of a substrate; a first insulating film formed on the surface of the first two-dimensional material thin film; and a second two-dimensional material thin film formed on the surface of the first insulating film. (11) The semiconductor device according to (8), further comprising a second insulating film formed on the surface of the second two-dimensional material thin film.

[0057] 100 (first) two-dimensional material thin film 110 (first) insulating film 120 (second) two-dimensional material thin film W wafer

Claims

1. A film formation method comprising the steps of: forming a first two-dimensional material thin film on a substrate surface; forming a first insulating film on the surface of the first two-dimensional material thin film; and forming a second two-dimensional material thin film on the surface of the first insulating film.

2. The film forming method according to claim 1, wherein both the steps of forming the two-dimensional material thin film and the insulating film are performed by atomic layer deposition.

3. The film forming method according to claim 1 or 2, wherein both the steps of forming the two-dimensional material thin film and the insulating film are performed in the same film forming apparatus.

4. The film forming method according to claim 1 or 2, wherein both the steps of forming the two-dimensional material thin film and the insulating film are carried out consecutively in the same module.

5. The film forming method according to claim 1 or 2, further comprising the step of forming a second insulating film on the surface of the second two-dimensional material thin film.

6. The film forming method according to claim 1 or 2, wherein the two-dimensional material thin film is a thin film of Mo or W sulfide, selenide, or telluride.

7. The film forming method according to claim 1 or 2, wherein the insulating film is an AlO film, a HfO film, or a ZrO film.

8. A film formation apparatus for forming a two-dimensional material thin film in the manufacture of a semiconductor device, comprising: a processing module for forming a two-dimensional material thin film on a substrate surface and forming an insulating film on the surface of the two-dimensional material thin film; and a control unit, wherein the control unit executes control including the steps of: forming a first two-dimensional material thin film on the substrate surface; forming a first insulating film on the surface of the first two-dimensional material thin film; and forming a second two-dimensional material thin film on the surface of the first insulating film.

9. The film forming apparatus according to claim 8, wherein the control unit executes control including a step of forming a second insulating film on a surface of the second two-dimensional material thin film.

10. A semiconductor device comprising: a first two-dimensional material thin film formed on a surface of a substrate; a first insulating film formed on the surface of the first two-dimensional material thin film; and a second two-dimensional material thin film formed on the surface of the first insulating film.

11. The semiconductor device of claim 10, further comprising a second insulating film formed on a surface of the second two-dimensional material thin film.

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