Doped dielectric packaging film

Abstract

Examples are disclosed that relate to depositing a doped packaging film over a die. One example provides a method of depositing a doped packaging film over a die. The method comprises exposing the die to a precursor gas mixture, the precursor gas mixture comprises a silicon oxide precursor and one or more dopant precursors, wherein exposing the die to the precursor gas mixture deposits the doped packaging film over the die.

Description

DOPED DIELECTRIC PACKAGING FILMBACKGROUND

[0001] Semiconductor device fabrication processes involve many steps of material deposition, patterning and removal to form integrated circuits on substrates. Typically, many integrated circuits are formed on a silicon wafer. After forming the integrated circuits, the substrate is diced into pieces referred to as “dies.” For example, each die can contain a copy of an integrated circuit. Then, each die is tested and packaged.SUMMARY

[0002] Examples are disclosed that relate to depositing a doped packaging film over a die. One example provides a method of depositing a doped packaging film. The method comprises exposing the die to a precursor gas mixture, the precursor gas mixture comprises a silicon oxide precursor and one or more dopant precursors, wherein exposing the die to the precursor gas mixture deposits the doped packaging film over the die.

[0003] In some such examples, exposing the die to the precursor gas mixture comprises depositing a doped packaging film comprising a thickness within a range of 25 pm to 200 pm.

[0004] Additionally or alternatively, in some such examples, exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising tetraethyl orthosilicate (TEOS).

[0005] Additionally or alternatively, in some such examples, exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising one or more of a boron-containing precursor or a phosphorus-containing precursor.

[0006] Additionally or alternatively, in some such examples, exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising the boron-containing precursor and the phosphorus-containing precursor.

[0007] Additionally or alternatively, in some such examples, exposing the die to the precursor gas mixture to deposit the doped packaging film comprises depositing a doped packaging film comprising a coefficient of thermal expansion within a range of 2.0 x 10-6 / °C to 4.0 x 10’6 / °C.

[0008] Additionally or alternatively, in some such examples, exposing the die to the precursor gas mixture to deposit the doped packaging film comprises depositing the dopedpackaging film by one or more of thermal chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), or high density plasma CVD (HDPCVD).

[0009] Additionally or alternatively, in some such examples, reacting the precursor gas mixture comprises depositing a first film layer using first plasma conditions, the first film layer comprising first stress characteristics, and depositing a second film layer on the first film layer using second plasma conditions, the second film layer comprising second stress characteristics that are different from the first stress characteristics.

[0010] Additionally or alternatively, in some such examples, the first stress characteristics comprises one of compressive stress or tensile stress, and the second stress characteristics comprises another of compressive stress or tensile stress.

[0011] Additionally or alternatively, in some such examples, the method further comprises depositing a third film layer on the second film layer, the third film layer comprising the one of compressive stress or tensile stress.

[0012] Additionally or alternatively, in some such examples, the method comprises depositing the doped packaging film on a substrate comprising the die and a second die, including within a gap between the die and the second die.

[0013] Another example provides a device. The device comprises a die. The device further comprises a doped packaging film formed over the die, the doped packaging film comprising silicon oxide doped with one or more of boron or phosphorus.

[0014] In some such examples, the doped packaging film comprises a thickness of 25 pm to 200 pm.

[0015] Additionally or alternatively, in some such examples, the doped packaging film comprises a coefficient of thermal expansion within a range of 2.0 x 10'6 / °C to 4.0 x 10'6 / °C.

[0016] Additionally or alternatively, in some such examples, the doped packaging film comprises a first film layer comprising compressive stress, and a second film layer comprising tensile stress.

[0017] Additionally or alternatively, in some such examples, the doped packaging film comprises a dopant concentration within a range of 3 atomic percent to 9 atomic percent.

[0018] Another example provides a processing tool. The processing tool comprises a processing chamber. The processing tool further comprises a substrate support disposed in the processing chamber. The processing tool further comprises a radiofrequency power source configured to form a radiofrequency plasma in the processing chamber. The processing tool further comprises flow control hardware configured to flow a silicon oxide precursor and a dopant precursor into the processing chamber. The processing tool further comprises acontroller configured to operate the flow control hardware to flow the silicon oxide precursor into the processing chamber. The controller is further configured to operate the flow control hardware to flow the dopant precursor into the processing chamber. The controller is further configured to operate the radiofrequency power source to form a plasma using the silicon oxide precursor and the dopant precursor to deposit a doped packaging film over a die.

[0019] In some such examples, the controller is configured to deposit a doped packaging film comprising a thickness within a range of 25 pm to 200 pm.

[0020] Additionally or alternatively, in some such examples, the silicon oxide precursor comprises tetraethyl orthosilicate (TEOS) and the dopant precursor comprises one or more of a boron-containing precursor or a phosphorus-containing precursor.

[0021] Additionally or alternatively, in some such examples, the controller is configured to operate the radiofrequency power source to form a plasma using first plasma conditions to deposit a first film layer over the die comprising a first stress, and form a plasma using second plasma conditions to deposit a second film layer on the first film layer, the second film layer comprising a second stress that is different from the first stress.BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIGS. 1 A-1B show a flow diagram illustrating an example method for forming a doped packaging film.

[0023] FIG. 2 schematically shows an example substrate comprising a doped packaging film.

[0024] FIG. 3 schematically shows an example substrate comprising a doped packaging film including a first film layer and a second film layer with different stress characteristics.

[0025] FIG. 4 schematically shows an example substrate comprising a doped packaging film that includes three film layers, each having a different stress characteristic.

[0026] FIGS. 5A-5B schematically show an example substrate including two dies placed on the substrate, a gap between the dies, and a doped packaging film deposited over the dies and in the gap.

[0027] FIG. 6 schematically shows an example processing tool for depositing a doped packaging film.

[0028] FIG. 7 shows a block diagram of an example computing system.DETAILED DESCRIPTION

[0029] The term “aspect ratio” generally represents a ratio of a depth of a feature of a substrate to an average width of the feature. In some examples, a feature can be a gap between dies that are mounted to another substrate.

[0030] The term “chemical vapor deposition” (CVD) generally represents a process in which a solid phase film is formed on a substrate by directing a flow of one or more precursor gases over the substrate surface under conditions configured to cause the chemical conversion of the precursor gases to the solid phase film. The term “plasma-enhanced chemical-vapor deposition” (PECVD) generally represents a CVD process in which a plasma is used to facilitate the chemical conversion of one or more precursor gases to a solid phase film on a substrate. The term “high density plasma CVD” (HDPCVD) generally represents a CVD process that utilizes an inductively-coupled plasma to form a higher concentration of energetic ions in the plasma than a capacitively coupled plasma used for PECVD. The terms “growth”, “deposition”, and variants thereof, also can be used to refer to film formation.

[0031] The term “chiplet” generally represents an integrated circuit formed on a die that is designed to be combined with one or more other chiplets formed on one or more other corresponding dies to form a device.

[0032] The term “die” generally represents an integrated circuit that has been diced from a larger substrate, such as a silicon wafer.

[0033] The term “doped silicon oxide” generally represents silicon oxide comprising one or more dopants. Examples of dopants include boron (B) and phosphorus (P).

[0034] The term “gap” generally represents a recessed feature in a substrate. For example, a gap can be a space between dies mounted to a substrate.

[0035] The term “gas mixture” generally represents a mixture of two or more gases in a processing chamber during a CVD process.

[0036] The term “oxidant” generally represents an oxygen-containing chemical that can react with a silicon oxide precursor to form a film of silicon oxide. Examples include oxygen (O2), ozone (O3), water (H2O), carbon dioxide (CO2), hydrogen peroxide (H2O2), and nitrous oxide (N2O).

[0037] The term “packaging film” generally represents a relatively thick (for example, > 25 pm) dielectric film deposited over a die to help protect the die. The term “doped packagingfilm” generally represents a packaging film comprising a dielectric film doped with one or more dopants.

[0038] The term “plasma” generally represents an ionized gas comprising gas-phase cations and free electrons.

[0039] The term “processing chamber” generally represents an enclosure in which chemical and / or physical processes are performed on substrates. The pressure, temperature, gas flow rate, and atmospheric composition within a processing chamber can be controllable to perform chemical and / or physical processes.

[0040] The term “radiofrequency (RF) power” generally represents oscillating electric energy in a radiofrequency regime. The frequency of RF power is within a range of approximately 20 kHz to 300 GHz.

[0041] The term “lower frequency” (“LF”) RF power generally represents RF power comprising a frequency of 3 MHz or lower.

[0042] The term “higher frequency” (“HF”) RF power generally represents RF power comprising a frequency of 3 MHz or higher.

[0043] The term “substrate” generally represents any object onto which a film can be deposited in a processing chamber. A substrate can comprise one or more dies positioned on the substrate.

[0044] As introduced above, in a semiconductor device manufacturing process, a packaging film can be deposited over a die to protect an integrated circuit of the die. A packaging film can include a dielectric film, such as a silicon oxide (SiCh) film. Various methods can be used to deposit a dielectric film on a substrate. Examples include various chemical vapor deposition (CVD) methods. Generally, CVD deposits a film by directing a continuous flow of precursor compound(s) over a substrate under conditions configured to convert the precursor compound(s) into a film. Thermal CVD (TCVD) processes utilize thermal energy to facilitate the chemical conversion of one or more precursor gases to a solid phase film on a substrate. Plasma-enhanced CVD (PECVD) processes utilize plasma to facilitate film formation. High density plasma CVD (HDPCVD) utilizes an inductively- coupled plasma to form a higher concentration of energetic ions in the plasma than a capacitively coupled plasma used in PECVD.

[0045] In integrated circuit manufacturing processes, a substate comprising a plurality of integrated circuits can be diced to form separate dies. In some manufacturing processes, such dies can be mounted to another substrate for additional processing. As one such example, a plurality of dies can be mounted to a carrier wafer for support. A packaging film then can bedeposited over the dies bonded to the carrier wafer. Then, the carrier wafer can be diced to separate the individual dies after depositing the packaging film. As another example, a plurality of dies each comprising a portion of an integrated circuit can be bonded (e.g. face to face) to a substrate with a corresponding plurality of complementary integrated circuit portions to form combined integrated circuits. As a more particular example, a plurality of dies comprising static random-access memory (SRAM) can be bonded to a substrate comprising a corresponding plurality of central processing unit (CPU) integrated circuits. After bonding, a packaging film can be deposited, and then the substrate can be diced. In some examples, the integrated circuit can comprise a system-on-chip (SOC). In further examples, a “chiple ’ approach can be used. A chiplet is an integrated device designed to work with other chiplets to form a more complex integrated circuit. Using the chiplet approach, relatively small integrated circuits can be formed on one or more substrates and diced to individual chiplets. Then, the chiplets can reassembled into the larger, more complex circuit and packaged.

[0046] Dielectric films used as packaging films can have a coefficient of thermal expansion (CTE) that is lower than the CTE of a die and / or substrate. While a die can comprise a number of different materials, an aggregate CTE of dies can be similar to that of silicon (e.g., within a range of 2.6xlO'6 / °C to 3.3xl0'6 / °C). In contrast, the CTE of a typical dielectric packaging film comprising silicon oxide formed from tetraethyl orthosilicate (TEOS) deposited by PECVD is approximately 1.0xl0'6 / °C or less. A CTE mismatch between the die and the packaging film can lead to various problems. For example, integrated circuits can heat up under heavy compute load. As the die expands at high temperature, tensile stress builds up in the packaging film due to the lower CTE. This can lead to bowing of the die and substrate. Stress and bowing can lead to cracking and / or delamination (peeling) of the packaging film from the die. The development of larger and larger dies for complex integrated circuits increases the risk of such issues arising from mismatched CTEs. This is because larger dies and / or more complex die geometries can increase a magnitude of thermal expansion mismatch experienced by the packaging film due to the larger dies, and / or cause different thermal expansion magnitudes in different locations and directions of a packaging film. Also, the packaging process can include a planarization step, such as a chemical mechanical polishing (CMP) step. Planarization can involve force to flatten a bowed wafer. This can cause cracking of the packaging film.

[0047] Further, packaging films are often deposited at relatively high temperatures, e.g., a temperature of 250 °C to 450 °C. As such, stress can build up in the packaging film as the die / substrate cools to room temperature. This is because the packaging film has a lowerCTE than the substrate and tends to expand and contract less with temperature changes than the substrate. When a material is free to move, the material can expand and contract with temperature changes without a buildup of thermal stress. However, as the packaging film adheres to the substrate, the packaging film will expand and contract with the substrate. As the substrate expands with increasing temperature, the packaging film is “stretched” laterally with the substrate and develops tensile stress. Similarly, as the substrate contracts at lower temperatures, the packaging film is laterally compressed and develops compressive stress. Thus, due to the lower CTE of the packaging film, the packaging film can comprise tensile stress at processing temperatures and compressive stress at room temperature.

[0048] Current packaging films sometimes have a thickness of 20 pm to 40 pm. However, the issues described above can be more problematic for thicker films. This is because the thermal stress described above can result in strain energy within the packaging film. As an extensive material property, the strain energy will be greater for thicker films. Due to a greater strain energy, thermal stress buildup in thicker films can cause more bowing of the die than thinner films. As such, thicker films can be more likely to crack or delaminate under high temperatures.

[0049] Dielectric films formed over dies also can be subject to thermal cycling during later steps of a packaging process, after depositing a dielectric packaging film over a die. For example, in such later steps, connections including vias and metallization features are formed. This process can involve repeatedly heating and cooling the substrate, such as from room temperature to 300 °C. Further, integrated circuits can experience thermal cycling during intended usage, as a device can heat up under heavy compute load and cool when not in use. Thermal cycling also poses challenges for packaging films including bowing, delamination, and cracking. This can lead to device failure.

[0050] Accordingly, examples are disclosed that relate to depositing a dielectric packaging film comprising doped silicon oxide that can help avoid the problems described above. Briefly, a die can be disposed in a processing chamber. A precursor gas mixture can be introduced into the processing chamber under conditions configured to deposit a doped packaging film over the die. The gas mixture comprises a silicon oxide precursor and a dopant precursor. The dopant precursor comprises one or more of a phosphorus-containing precursor or a boron-containing precursor. The precursors can be reacted by TCVD, PECVD, or HDPCVD, as examples. In some examples, the doped packaging film comprises silicon oxide doped with one or more of boron or phosphorus.

[0051] The CTE of the doped packaging film can be greater than the CTE of a packaging film comprising undoped silicon oxide. With reference to boron and phosphorus as example dopants, the increased CTE can be due to B-0 bonding and / or P-0 bonding in the doped silicon oxide. Additionally, the doping elements replace the Si in the film microstructure, which leads to reduced cross-link density in doped silicon oxide films in comparison with undoped silicon oxide films. Further, phosphorus oxide (P2O5) and boron oxide (B2O3) each have a CTE that is greater than the CTE of silicon oxide (SiCh). In some examples, the CTE of a doped packaging film can be tuned to match the CTE of the die and / or substrate by varying a concentration of one or more dopants in the doped packaging film. As a result, the doped packaging film can expand at a similar rate as the underlying die and / or substrate when heated. Further, doped silicon oxide, such as a boron-doped and / or phosphorus-doped silicon oxide, can comprise a lower bulk modulus than that of undoped silicon oxide. In other words, the doped silicon oxide films are more compressible than undoped silicon oxide films. A lower bulk modulus also results in relatively less stress in the doped silicon oxide film when the doped silicon oxide film is strained by thermal expansion of a substrate on which the doped silicon oxide film is deposited. Thus, due to these factors, a doped packaging film comprising doped silicon oxide on a die can comprise less stress when the die expands at higher temperatures than a die with an undoped silicon oxide film of similar thickness. A doped packaging film comprising doped silicon oxide also can be more resilient to thermal cycling than an undoped silicon oxide film. This helps avoid bowing of the die, and further helps avoid cracking and delamination of the packaging film. By avoiding stress and bowing at high temperatures, a doped packaging film can be made thicker than films comprising undoped silicon oxide. This can help in packaging relatively large dies and / or dies comprising relatively complex die geometries. Furthermore, doping can increase the toughness of silicon oxide films compared with undoped silicon oxide. Doping also helps form films having better anti-crack performance. In some examples, a doped packaging film can comprise a thickness of 25 pm to 200 pm.

[0052] Further the dopant level in the doped packaging film can be controlled to tune the CTE of the packaging film. Where boron and phosphorus are used as dopants, the CTE of the packaging film increases with dopant concentration. Further, as described below, adjusting the phosphorus concentration can provide rough control of the CTE of the doped packaging film. Additionally, adjusting the boron concentration can provide a finer control of the CTE. In some examples, the CTE of the doped packaging film can be tuned to a CTE that issubstantially similar to the CTE of the die. This can help avoid stress in the doped packaging film at higher temperatures. In further examples, the doped packaging film can comprise a mixed phase (e.g., a mixed phase of SiCh, P2O5, and B2O3). In some such examples, a mixed phase film can comprise a dopant concentration gradient through the thickness of the film. Such a concentration gradient can allow for a different net CTE of an SiCh layer than a consistent dopant concentration. In other examples, a doped packaging film can comprise a plurality of layers with different dopants and / or dopant concentrations.

[0053] The examples disclosed herein also can provide for effective gapfill without void formation. For example, where two or more dies are bonded to a substrate, the substrate can comprise a gap between dies. The CVD processes described below can be used to deposit a doped packaging film on the substrate including the gap between dies. In some more particular examples, a void-free doped silicon oxide film can be deposited within a gap comprising an aspect ratio of 0.57 or less.

[0054] The examples disclosed herein can further provide for tuning the density of a doped packaging film and / or stress of the doped packaging film. Denser films can comprise greater compressive stress than less dense films. In examples where PECVD or HDPCVD is used to deposit the doped packaging film, plasma conditions can be controlled to tune the density of the film. This helps to control the stress of the deposited film at room temperature. In some examples, a doped packaging film can be formed to have less tensile stress, no stress, or compressive stress. In further examples, two or more film layers can be deposited, each film layer comprising different stress characteristics. These examples are described in more detail below.

[0055] FIGS. 1A-1B show a flow diagram of an example method 100 for depositing a doped packaging film over a die using CVD. Method 100 comprises, at 102, exposing the die to a precursor gas mixture. The precursor gas mixture comprises a silicon oxide precursor and one or more of a boron-containing precursor or a phosphorus-containing precursor.

[0056] Any suitable film precursors can be used. In some examples, at 104, the silicon oxide precursor comprises tetraethyl orthosilicate (TEOS). Further examples of silicon oxide precursors include alkoxysilanes. Alkoxysilanes that can be used include those having a composition of Hx-Si-(OR)y, where x = 1-3, x+y = 4 and each R is a substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted aromatic group; and Hx(RO)y,-Si-Si-(OR)yHx, where each R is a substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, or substituted or unsubstituted aromatic group. Example alkoxysilanes includetetramethoxysilane (TMOS), diethoxymethylsilane (DEMS), diethoxysilane (DES), dimethoxymethylsilane, dimethoxysilane (DMOS), methyl-diethoxysilane (MDES), methyldimethoxysilane (MDMS), t-butoxydisilane, triethoxysilane (TES), and trimethoxysilane (TMS or TriMOS).

[0057] In some examples, the silicon oxide precursor is a siloxane. Siloxanes include materials having Si-O-Si linkages. Example siloxanes include octamethylcyclotetrasiloxane (OMCTS), octamethoxydodecasiloxane (OMODDS), and tetramethylcyclotetrasiloxane (TMCTS).

[0058] In some examples, the silicon oxide precursor is an aminosilane. Aminosilanes include materials having the general formula Hx-Si-(NR)y, where x = 1-3, x+y = 4, and R is a substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, substituted or unsubstituted aromatic group, or hydride group. Example aminosilanes include bisdiethylaminosilane, diisopropylaminosilane, bis(t-butylamino) silane (BTBAS), di-sec-butylaminosilane, and tris(dimethylamino)silane (3DMAS).

[0059] In some examples, the silicon oxide precursor can be a halosilane. In some examples, a halosilane can comprise at least one hydrogen atom. Such a silane can have a chemical formula of SiXaHy where y = 1-3, a+y = 4. Examples of halosilanes can include dichlorosilane (EhSiCh), hexachlorodisilane (Si2Cle), and diiodosilane (H2SH2).

[0060] Further examples of silicon oxide precursors include polysilanes (SinH2n+2, where n >1, such as silane, disilane, trisilane, and tetrasilane), trisilylamine, methylsilane, trimethylsilane (3MS), ethylsilane, butasilanes, pentasilanes, octasilanes, heptasilane, hexasilane, cyclobutasilane, cycloheptasilane, cyclohexasilane, cyclooctasilane, cyclopentasilane, l,4-dioxa-2,3,5,6-tetrasilacyclohexane, triethoxysiloxane (TRIES), and tetraoxymethylcyclotetrasiloxane (TOMCTS).

[0061] In some examples, at 106, the gas mixture comprises a boron-containing precursor comprising a trialkyl borate having a general formula of RJR2R3-BO3, where each of R1, R2, and R3independently represent an alkyl group comprising 1-6 carbon atoms. Further example of boron-containing precursors include trialkylboranes.

[0062] In some examples, at 108, the precursor gas mixture comprises a phosphorus- containing precursor comprising a trialkyl phosphate having a general formula of R1R2R3-PO4, where each of R1, R2, and R3independently represent an alkyl group comprising 1-6 carbon atoms. Further examples of phosphorus-containing precursors include phosphine, and halosubstituted phosphines such as phosphorus trichloride.

[0063] The precursor gas mixture also can comprise an oxidant. Any suitable oxidant can be used that can react with a silicon oxide precursor to form a doped silicon oxide film. Examples include ozone (O3), molecular oxygen (O2), water (H2O), carbon dioxide (CO2), hydrogen peroxide (H2O2), nitrous oxide (N2O), and combinations thereof.

[0064] The precursor gas mixture also can comprise an inert gas. Any suitable inert gas can be used. Examples include argon, helium, neon, krypton, xenon, nitrogen, and combinations thereof.

[0065] Continuing, method 100 further comprises, at 110, reacting the precursor gas mixture to deposit the doped packaging film over the die. In this example, the doped packaging film comprises silicon oxide doped with one or more of boron or phosphorus. FIG. 2 schematically shows a substrate 200 comprising a doped packaging film 202 deposited on the substrate. Substrate 200 can take the form of a die, a carrier wafer, a chiplet, or or any other suitable form. Doped packaging film 202 comprises silicon oxide doped with one or more of boron or phosphorus. In some examples, the doped packaging film 202 comprises a mixed phase comprising silicon oxide (SiCh) and one or more of phosphorus oxide (P2O5) or boron oxide (B2O5).

[0066] Boron and phosphorus concentrations in the doped packaging film 202 can be controlled by controlling the respective flow rates of film precursor gases. Any suitable gas flow rates can be used for introducing the film precursor gases to the die. In some examples, the silicon oxide precursor is flowed at a rate ranging from 0.5 standard cm3 / minute (seem) to 20 seem. In some such examples, a flow rate ranging from 5 seem to 15 seem can be used. The boron-containing precursor and / or the phosphorus-containing precursor can be flowed at any suitable rate based on a desired doping level in the doped packaging film. In some examples, a flow rate ranging from 0.6 seem to 2.4 seem can be used for a dopant precursor. In other examples, flow rates outside these ranges can be used.

[0067] By controlling the boron concentration and / or phosphorus concentration, the CTE of the doped packaging film 202 can be tuned to a selected value. As mentioned above, the CTE of the packaging film increases with dopant concentration. In some examples, the dopant concentration can be less than 10 at % (atomic percent), e.g., 3-9 at %. In some more specific examples, a doped packaging film can comprise a phosphorus concentration ranging from 2-4 at % and / or a boron concentration ranging from 5-6 at %. In other examples, dopant concentrations outside these ranges can be used. The CTE of the doped packaging film is more sensitive to phosphorus concentration than boron concentration. As such, controlling the amount of phosphorus in the doped packaging film provides a rough control over the CTE. Theterm “rough control” indicates that relatively smaller changes in phosphorus content can lead to relatively bigger changes in the CTE compared to changes in the boron content, which can make fine control of the CTE relatively more difficult to achieve through controlling phosphorus content than through controlling boron content. Conversely, controlling the amount of boron in the doped packaging film provides a finer control over the CTE, as the CTE of the doped packaging film is less sensitive to changes in the amount of boron (thereby allowing for finer control). Referring briefly to FIG. 1A, in some examples, at 112, the doped packaging film comprises a CTE within a range of 2.0xl0'6 / °C to 4.0x10'6 / °C. This range is greater than that of undoped silicon oxide (approximately 1.0xl0'6 / °C or less). In some examples, the CTE of the doped packaging film is tuned to match the CTE of a die or other substrate on which the doped packaging film is deposited. For example, the CTE of the doped packaging film can be tuned to a CTE within a range of 2.6xlO'6 / °C to 3.3xl0'6 / °C to match silicon. All ranges of values stated herein are inclusive of the range endpoints.

[0068] Additionally, doping silicon oxide with one or more of boron or phosphorus can lower a bulk modulus of the silicon oxide. A film with a lower bulk modulus experiences less stress for a given strain compared to a film with a higher bulk modulus. As such, a lower bulk modulus can help avoid stress in the doped packaging film when the packaging film is strained due to thermal expansion / compression of the die. Lower stress can help avoid the issues discussed above, such as cracking and bowing. Further, a greater CTE of the doped packaging film lowers the thermal expansion mismatch between the doped packaging film and the die. A lower thermal expansion mismatch results in less strain experienced by the doped packaging film upon thermal expansion / compression of the die. By lowering strain, stress in the doped packaging film can be further decreased. As such, due to the doped packaging film having a lower bulk modulus and greater CTE than an undoped film, bowing of the packaged die can be avoided. For example, in some experiments, bowing of the packaged die was 100 pm or less, as measured by off-planar displacement of die edges relative to the center of the die.

[0069] Doped packaging film 202 can comprise any suitable thickness. Returning to FIG. 1 A, in some examples, at 114, the doped packaging film comprises a thickness of 25 pm to 200 pm. Further, in some examples, at 116, the doped packaging film comprises a thickness of 100 pm to 200 pm. In other examples, a thickness outside these ranges can be used.

[0070] Any suitable technique can be used for reacting the film precursors to form the doped packaging film. Referring now to FIG. IB, in some examples, at 118, method 100 comprises performing thermal CVD. In other examples, at 120, the method comprisesperforming high-density plasma CVD (HDPCVD). In yet further examples, at 122, the method comprises performing PECVD.

[0071] Any suitable processing conditions can be used for reacting the precursor gas mixture to deposit the doped packaging film. Regarding processing chamber pressure, in some examples, the CVD process is performed at a pressure within a range of 1 Torr to 30 Torr. In some such examples, the CVD process is performed at a pressure within a range of 1.5 Torr to 10 Torr. In some more particular examples, the CVD process is performed at a pressure within a range of 2 torr to 5.5 Torr. Regarding temperature, in some examples, the CVD process is performed using a substrate heater temperature within a range of 50 °C to 650 °C. In examples that utilize thermal CVD, a substrate heater temperature within a range of 400 °C to 650 °C can be used. In examples that utilize PECVD at 122, a substrate heater temperature within a range of 150 °C to 450 °C can be used. In other examples, a temperature outside these ranges can be used for any of thermal CVD, HDPCVD, or PECVD.

[0072] In examples that utilize PECVD at 122, any suitable plasma conditions can be used to deposit the doped packaging film. Example plasma conditions include radiofrequency power within a range of 50 to 5000 Watts (W). In other examples, higher powers can be used. Example frequencies for the radiofrequency plasma include frequencies of 400 kHz, 13.56 MHz, 27 MHz, 60 MHz, and 90 MHz.

[0073] In some examples, the PECVD process can be performed using a plasma with both a higher frequency radiofrequency energy component (“HF component”) and a lower frequency radiofrequency energy component (“LF component”). The HF component can comprise frequencies of 3 MHz to 300 MHz. The LF component can comprise frequencies of 3 MHz and below. In some such examples, the HF component can comprise a radiofrequency power within a range of 50 to 5000 W. Similarly, in some such examples, the LF component can comprise a radiofrequency power within a range of 0 to 5000 W. In other examples, values outside these ranges can be used. Unless otherwise stated, values for radiofrequency power refers to power per substrate processing station. Radiofrequency power for a multi-station processing chamber can be scaled accordingly.

[0074] Plasma conditions can be controlled to tune a density and / or stress of the deposited doped packaging film. For example, forming a plasma using a relatively higher radiofrequency power can form a denser film than use of a relatively lower radiofrequency power. Additionally, use of an LF component of RF power in addition to an HF component also can help form a denser film.

[0075] As mentioned above, a doped packaging film can comprise stress after the deposited film and die / substrate cools to room temperature. However, by controlling plasma conditions to tune the density of the doped packaging film, method 100 also can be used to control the room temperature stress of a doped packaging film. For example, by depositing a relatively denser packaging film, the doped packaging film comprises less tensile stress at room temperature compared to a less dense doped packaging film. In various examples, a doped packaging film can comprise tensile stress, neutral stress, or compressive stress. As such, by controlling dopant concentrations as discussed above, and controlling plasma conditions during PECVD or HDPCVD, the tensile stress of the doped packaging film at process temperature (>250 °C) may be reduced, or even eliminated.

[0076] Continuing with method 100, in some examples, at 124, PECVD is performed using first plasma conditions to deposit a first film layer having a first stress. Further, PECVD is performed using second plasma conditions to deposit a second film layer having a second stress that is different from the first stress of the first film layer. In some examples, at 126, the first film layer comprises compressive stress and the second film layer comprises tensile stress.

[0077] FIG. 3 schematically shows an example substrate 300 comprising a doped packaging film 302. Doped packaging film 302 comprises silicon oxide doped with one or more of boron or phosphorus. Doped packaging film 302 comprises a first film layer 304 and a second film layer 306. The first film layer 304 comprises compressive stress. Further, the second film layer 306 comprises tensile stress. In other examples, the first and second film layer can comprise stress of different magnitudes. As one example, the first film layer can comprise relatively greater compressive stress and the second film layer can comprise relatively lesser compressive stress. Having different layers with different stress characteristics can allow an aggregate stress characteristic of the packaging film to be tailored, for example to avoid bowing, and / or to have thermal expansion gradients that change progressively between layers. This can help to avoid such problems as bowing from film stress, and / or fracturing due to mismatch of the coefficients of thermal expansion between device components. Further, the film layers can comprise any suitable dopant concentration(s). In some examples, a film layer can comprise a phosphorus concentration within a range of 2 at % to 4 at %. Additionally or alternativley, the film layer can comprise a boron concentration within a range of 5 at % to 6 at %. In some examples, the total dopant concentration can range from 3 at % to 9 at %. Dopant concentrations within these ranges can help match the CTE of the doped packaging film to a CTE of a die and / or a CTE of silicon (2.6xlO'6 / °C to 3.3xl0'6 / °C). In other examples, dopantconcentrations outside these ranges can be used. In some examples, first film layer 304 can comprise a dopant concentration that is similar that of second film layer 306. In other examples, the dopant concentrations can be different.

[0078] Returning to FIG. IB, in some examples, at 128, the PECVD process comprises using third plasma conditions to deposit a third film layer on the second film layer. The third film layer can comprise a stress that is different from the stress of the second film layer. In some examples, the first film layer and the third film layer can comprise a similar stress. In some such examples, additional film layers can be deposited after the third film layer to form a doped packaging film of a desired thickness, stress, and / or bulk modulus.

[0079] FIG. 4 schematically shows an example device that includes three film layers deposited on a substrate. Substrate 400 comprises a doped packaging film 402 deposited on the substrate. Doped packaging film 402 comprises silicon oxide doped with one or more of boron or phosphorus. Doped packaging film 402 comprises a first film layer 404, a second film layer 406, and a third film layer 408. The film layers can comprise any suitable stress and any suitable dopant concentrations. In some examples, the film layers can be deposited using different radiofrequency powers to form layers comprising different densities. Additionally or alternatively, the film layers can be deposited using different dopant concentrations. In this example, first film layer 404 is deposited using a relatively higher energy radiofrequency power. This forms a relatively denser doped packaging film. As a result, first film layer 404 comprises compressive stress. Second film layer 406 is deposited using a relatively lower energy radiofrequency power than used for depositing first film layer 404. This forms a film layer that is relatively less dense than first film layer 404. Second film layer 406 comprises tensile stress. Additionally, third film layer 408 is deposited under similar conditions as first film layer 404. Third film layer 408 comprises compressive stress. By forming a film layer comprising tensile stress between film layers comprising compressive stress, doped packaging film 402 can be more resistant to cracking than other films formed without varied stress layers. Without wishing to be bound by theory, it is thought that the layers comprising compressive stress can increase the strength of the doped packaging film, similar to tempered glass.

[0080] In further examples, four or more film layers can be deposited to form a doped packaging film. Additionally, in some examples, one or more film layers can comprise a dopant concentration gradient. For example, a flow rate of the boron-containing precursor, a flow rate of the phosphorus-containing precursor, and / or plasma conditions, can be continuously adjusted during film deposition by CVD. A dopant concentration gradient can provide agradient in a stress profile of the doped packaging film. This may help provide for a relatively smooth transition of stress characteristics between film layers.

[0081] Returning to FIG. IB, in some examples, method 100 comprises, at 132, depositing the doped packaging film on a substrate comprising a first die and a second die. The doped packaging film is also deposited within a gap between the first die and the second die. As mentioned above, the doped packaging film can be deposited without void formation within gaps of various aspect ratios. In a more particular example, the packaging film comprises an aspect ratio of 0.7 or less. In other examples, gapfill can be performed for a gap comprising a greater aspect ratio.

[0082] As mentioned above, a doped packaging film can be more resilient to thermal cycling than an undoped film. For example, the die can be thermally cycled for a plurality of thermal cycles without thermally fracturing the doped packaging film. In some such examples, the thermal cycles can comprise heating the die to temperatures of 300 °C or greater, and cooling the die to 25 °C (approximately room temperature). Such thermal cycling can happen during subsequent packaging steps, film deposition, during testing, and / or during end use. Due to the greater CTE of the doped silicon oxide and greater similarity to the CTE of the Si substrate, the doped packaging film has less stress change over the thermal cycles and is less likely to crack than an undoped silicon oxide film of similar thickness.

[0083] FIGS. 5A-5B schematically shows structures formed in an example CVD process for forming a doped packaging film on substrate 500 comprising a plurality of dies, two of which are shown as a first die 502 and a second die 504. Substrate 500 can represent a carrier wafer, a substrate comprising integrated circuits for forming chiplets, or any other suitable structure. FIG. 5B shows a doped packaging film 510 deposited on substrate 500, first die 502, and second die 504. Doped packaging film 510 comprises silicon oxide doped with one or more of phosphorus and boron.

[0084] Doped packaging film 510 can comprise any suitable thickness. Examples include thicknesses within a range of 25 pm to 200 pm. In other examples, a thickness outside this range can be used. Doped packaging film 510 also is deposited into a gap 512 between first die 502 and second die 504. Doped packaging film 510 is deposited into gap 512 without forming a void.

[0085] Thus, by using a doped packaging film, the examples described herein can help avoid problems such as bowing, cracking, and delamination of a packaging film. For example, a doped packaging film can comprise a greater CTE than undoped silicon oxide. This helps toavoid thermal stress in a packaging film deposited over a die over a range of temperatures. Further, the doped packaging film can have a lower bulk modulus than undoped silicon oxide films. This also helps to reduce stress change in the film over the elevated temperatures. As such, the disclosed examples can provide for a packaging film that is more resilient to thermal cycling than an undoped silicon oxide film. This helps avoid bowing of the die, and further helps avoid cracking and delamination of the doped packaging film. By avoiding these issues, a doped packaging film can be made thicker than an undoped silicon oxide film.

[0086] FIG. 6 schematically shows an example processing tool 600. Processing tool 600 can be used to perform the methods and form the films of the examples of FIGS. 1A-5. The processing tool can be configured to perform PECVD and thermal CVD. While the following embodiments refer to PECVD, such embodiments should not be considered limiting. In other examples, a processing tool configured for HDPCVD can be used.

[0087] Processing tool 600 comprises a processing chamber 602 and a substrate support604 within the processing chamber. The substrate support 604 can be configured to support a substrate 606 disposed within processing chamber 602. Substrate 606 can comprise one or more dies disposed on the substrate. The substrate support 604 comprises a substrate heater 608. In other examples, a heater can be omitted, or can be located elsewhere within processing chamber 602. The processing tool 600 further comprises a showerhead 610 for introducing processing chemicals into the processing chamber.

[0088] The processing tool 600 further comprises flow control hardware 614. The flow control hardware 614 connects processing chemical source(s) to the processing chamber. In the depicted example, the flow control hardware 614 connects a silicon oxide precursor source 616, a dopant precursor source 618, an optional oxidant source 620, and an optional inert gas source 622 to the processing chamber. The flow control hardware 614 can include any suitable components. Examples include mass flow controllers, valves, and conduits. For example, the flow control hardware 614 can comprise one or more valves controllable to place a selected gas source or selected gas sources in fluid connection with showerhead 610. The flow control hardware 614 also can comprise one or more mass flow controllers or other controllers for controlling a mass flow rate of gas.

[0089] The silicon oxide precursor source 616 can comprises any suitable silicon oxide precursor(s) for forming a silicon oxide film. In some examples, silicon oxide precursor source 616 comprises TEOS 616A. Further examples of silicon oxide precursors include those listed above.

[0090] The dopant precursor source 618 comprises any suitable dopant precursor for forming doped silicon oxide with a silicon oxide precursor. In some examples, the dopant precursor source 618 comprises a boron-containing precursor 618A. In some examples, the dopant precursor source 618 comprises a phosphorus-containing precursor 618B. Examples of boron-containing precursors and phosphorus-containing precursors are listed above.

[0091] The optional oxidant source 620 comprises any suitable oxygen-containing chemical for providing oxygen for forming a doped silicon oxide film. Examples include molecular oxygen and ozone. Examples include ozone (O3), oxygen (O2), water (H2O), carbon dioxide (CO2), hydrogen peroxide (H2O2), and nitrous oxide (N2O).

[0092] The optional inert gas source 622 comprises any suitable inert gas. Examples include argon, helium, neon, krypton, xenon, and nitrogen.

[0093] The processing tool 600 further comprises an exhaust system 632. The exhaust system 632 is configured to exhaust gases from the processing chamber 602. The exhaust system 632 can comprise any suitable hardware, including one or more low vacuum pumps, one or more high vacuum pumps, and one or more valves for controlling an exhaust flow. Together, flow control hardware 614 and exhaust system 632 can be operated to achieve a selected pressure in processing chamber 602 during substrate processing. Example pressures include pressures within a range of 1 Torr to 30 Torr. Further, exhaust system 632 can be operated to purge processing chamber 602.

[0094] The processing tool 600 further comprises a radiofrequency power source 634 that is electrically connected to showerhead 610. Radiofrequency power source 634 is configured to form a plasma using a gas mixture.

[0095] For example, during a deposition step, radiofrequency power source 634 can be operated to form a plasma using a gas mixture comprising one or more of film precursors to deposit a film. Radiofrequency power can be supplied to the showerhead electrode or substrate holder electrode in various examples. As shown in FIG. 6, the radiofrequency energy is provided to showerhead 610, and substrate support 604 is configured as a grounded opposing electrode. In other examples, the radiofrequency power source 634 can supply radiofrequency power to substrate support 604, and showerhead 610 can be grounded. In the depicted example, a capacitively coupled plasma can be formed in processing chamber 602 between showerhead 610 and substrate support 604. In other examples, an inductively coupled plasma can be used. An inductively coupled plasma can be used for performing HDPCVD of a doped packaging film. In some examples, HDPCVD can help form a denser film than PECVD. This is becauseHDPCVD can expose a substrate to a higher ion flux than PECVD, thereby densifying a deposited film.

[0096] The processing tool 600 further includes a matching network 636 for impedance matching of the radiofrequency power source 634. The radiofrequency power source 634 can be configured to provide radiofrequency energy of any suitable frequency and power. Examples frequencies include 400 kHz, 13.56 MHz, 27 MHz, 60 MHz, and 100 MHz. In some examples, the radiofrequency power source 634 is configured to operate at a plurality of different frequencies and / or powers. For example, as described above, a plasma can comprise an LF component and an HF component. Examples of frequencies for the LF radiofrequency energy component can include frequencies within a range of 3 MHz and below. The LF radiofrequency energy component can comprise a power within a range of 0 to 5000 W, in some examples. Further, the HF radiofrequency energy component can comprise frequencies within a range of 3 MHz to 300 MHz. The HF radiofrequency energy component can comprise a power within a range of 50 W to 5000 W, in some examples.

[0097] The processing tool 600 further comprises a controller 650 configured to control operation of the processing tool. The controller 650 is operatively coupled to the substrate heater 608, the flow control hardware 614, the exhaust system 632, and the radiofrequency power source 634. The controller 650 is configured to control various functions of processing tool 600 to perform PECVD of a doped packaging film comprising silicon oxide doped with one or more of boron or phosphorus. For example, the controller 650 is configured to control processing tool 600 to operate the substrate heater 608 to heat to a desired temperature. Examples include temperatures within a range of 50 °C to 650 °C, or temperatures within a range of 250 °C to 450 °C. The controller 650 also is configured to operate the flow control hardware 614 to flow a selected gas or mixture of gases at a selected rate into the processing chamber 602. The controller 650 is further configured to operate the exhaust system 632 to remove gases from processing chamber 602. The controller 650 can, for example, control the exhaust system 632 and / or the flow control hardware 614 to purge the processing chamber 602. The controller 650 is configured to operate the radiofrequency power source 634 to form a plasma, as well as to control any other suitable functions of processing tool 600.

[0098] Controller 650 can comprise any suitable computing system. FIG. 7 schematically shows a non-limiting example of a computing system 700 that can enact one or more of the methods and processes described above. Computing system 700 is shown in simplified form. Computing system 700 can take the form of one or more personal computers,workstations, computers integrated with substrate processing tools, and / or network accessible server computers.

[0099] Computing system 700 includes a logic subsystem 702 and a storage subsystem 704. Computing system 700 can optionally include a display subsystem 706, input subsystem 708, communication subsystem 710, and / or other components not shown in FIG. 7. Controller 650 is an example of computing system 700.

[0100] Logic subsystem 702 includes one or more physical devices configured to execute instructions. For example, the logic machine can be configured to execute instructions that are part of one or more applications, services, programs, routines, libraries, objects, components, data structures, or other logical constructs. Such instructions can be implemented to perform a task, implement a data type, transform the state of one or more components, achieve a technical effect, or otherwise arrive at a desired result.

[0101] The logic machine can include one or more processors configured to execute software instructions. Additionally or alternatively, the logic machine can include one or more hardware or firmware logic machines configured to execute hardware or firmware instructions. Processors of the logic machine can be single-core or multi-core, and the instructions executed thereon can be configured for sequential, parallel, and / or distributed processing. Individual components of the logic machine optionally can be distributed among two or more separate devices, which can be remotely located and / or configured for coordinated processing. Aspects of the logic machine can be virtualized and executed by remotely accessible, networked computing devices configured in a cloud-computing configuration.

[0102] Storage subsystem 704 includes one or more physical devices configured to hold instructions 712 executable by the logic machine to implement the methods and processes described herein. When such methods and processes are implemented, the state of storage subsystem 704 can be transformed — e.g., to hold different data.

[0103] Storage subsystem 704 can include removable and / or built-in devices. Storage subsystem 704 can include optical memory (e.g., CD, DVD, HD-DVD, Blu-Ray Disc, etc.), semiconductor memory (e.g., RAM, EPROM, EEPROM, etc.), and / or magnetic memory (e.g., hard-disk drive, floppy-disk drive, tape drive, MRAM, etc.), among others. Storage subsystem 704 can include volatile, nonvolatile, dynamic, static, read / write, read-only, random-access, sequential-access, location-addressable, file-addressable, and / or content-addressable devices.

[0104] It will be appreciated that storage subsystem 704 includes one or more physical devices. However, aspects of the instructions described herein alternatively can be propagatedby a communication medium (e.g., an electromagnetic signal, an optical signal, etc.) that is not held by a physical device for a finite duration.

[0105] Aspects of logic subsystem 702 and storage subsystem 704 can be integrated together into one or more hardware-logic components. Such hardware-logic components can include field-programmable gate arrays (FPGAs), program- and application-specific integrated circuits (PASIC / ASICs), program- and application-specific standard products (PSSP / ASSPs), system-on-a-chip (SOC), and complex programmable logic devices (CPLDs), for example.

[0106] When included, display subsystem 706 can be used to present a visual representation of data held by storage subsystem 704. This visual representation can take the form of a graphical user interface (GUI). As the herein described methods and processes change the data held by the storage machine, and thus transform the state of the storage machine, the state of display subsystem 706 can likewise be transformed to visually represent changes in the underlying data. Display subsystem 706 can include one or more display devices utilizing virtually any type of technology. Such display devices can be combined with logic subsystem 702 and / or storage subsystem 704 in a shared enclosure, or such display devices can be peripheral display devices.

[0107] When included, input subsystem 708 can comprise or interface with one or more user-input devices such as a keyboard, mouse, or touch screen. In some examples, the input subsystem can comprise or interface with selected natural user input (NUI) componentry. Such componentry can be integrated or peripheral, and the transduction and / or processing of input actions can be handled on- or off-board. Example NUI componentry can include a microphone for speech and / or voice recognition, and an infrared, color, stereoscopic, and / or depth camera for machine vision and / or gesture recognition.

[0108] When included, communication subsystem 710 can be configured to communicatively couple computing system 700 with one or more other computing devices. Communication subsystem 710 can include wired and / or wireless communication devices compatible with one or more different communication protocols. As non-limiting examples, the communication subsystem can be configured for communication via a wireless telephone network, or a wired or wireless local- or wide-area network. In some examples, the communication subsystem can allow computing system 700 to send and / or receive messages to and / or from other devices via a network such as the Internet.

[0109] It will be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific examples or examples are not to be consideredin a limiting sense, because numerous variations are possible. The specific routines or methods described herein can represent one or more of any number of processing strategies. As such, various acts illustrated and / or described can be performed in the sequence illustrated and / or described, in other sequences, in parallel, or omitted. Likewise, the order of the abovedescribed processes can be changed.

[0110] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

CLAIMS:

1. A method of depositing a doped packaging film over a die, the method comprising: exposing the die to a precursor gas mixture, the precursor gas mixture comprising a silicon oxide precursor and one or more dopant precursors, wherein exposing the die to the precursor gas mixture deposits the doped packaging film over the die.

2. The method of claim 1 , wherein exposing the die to the precursor gas mixture comprises depositing a doped packaging film comprising a thickness within a range of 25 pm to 200 pm.

3. The method of claim 1 , wherein exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising tetraethyl orthosilicate (TEOS).

4. The method of claim 1 , wherein exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising one or more of a boron-containing precursor or a phosphorus-containing precursor.

5. The method of claim 4, wherein exposing the die to the precursor gas mixture comprises exposing the die to a precursor gas mixture comprising the boron-containing precursor and the phosphorus-containing precursor.

6. The method of claim 1 , wherein exposing the die to the precursor gas mixture to deposit the doped packaging film comprises depositing a doped packaging film comprising a coefficient of thermal expansion within a range of 2.0 x 10’6 / °C to 4.0 x 10'6 / °C.

7. The method of claim 1 , wherein exposing the die to the precursor gas mixture to deposit the doped packaging film comprises depositing the doped packaging film by one or more of thermal chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), or high density plasma CVD (HDPCVD).

8. The method of claim 7, wherein reacting the precursor gas mixture comprises depositing a first film layer using first plasma conditions, the first film layer comprising first stress characteristics; anddepositing a second film layer on the first film layer using second plasma conditions, the second film layer comprising second stress characteristics that are different from the first stress characteristics.

9. The method of claim 8, wherein the first stress characteristics comprises one of compressive stress or tensile stress, and the second stress characteristics comprises another of compressive stress or tensile stress.

10. The method of claim 9, further comprising depositing a third film layer on the second film layer, the third film layer comprising the one of compressive stress or tensile stress.

11. The method of claim 1, wherein the method comprises depositing the doped packaging film on a substrate comprising the die and a second die, including within a gap between the die and the second die.

12. A device, comprising: a die; and a doped packaging film formed over the die, the doped packaging film comprising silicon oxide doped with one or more of boron or phosphorus.

13. The device of claim 12, wherein the doped packaging film comprises a thickness of 25 pm to 200 pm.

14. The device of claim 12, wherein the doped packaging film comprises a coefficient of thermal expansion within a range of 2.0 x 10'6 / °C to 4. Ox 10'6 / °C.

15. The device of claim 12, wherein the doped packaging film comprises a first film layer comprising compressive stress, and a second film layer comprising tensile stress.

16. The device of claim 12, wherein the doped packaging film comprises a dopant concentration within a range of 3 atomic percent to 9 atomic percent.

17. A processing tool, comprising: a processing chamber;a substrate support disposed in the processing chamber; a radiofrequency power source configured to form a radiofrequency plasma in the processing chamber; flow control hardware configured to flow a silicon oxide precursor and a dopant precursor into the processing chamber; and a controller configured to operate the flow control hardware to flow the silicon oxide precursor into the processing chamber, operate the flow control hardware to flow the dopant precursor into the processing chamber, operate the radiofrequency power source to form a plasma using the silicon oxide precursor and the dopant precursor to deposit a doped packaging film over a die.

18. The processing tool of claim 17, wherein the controller is configured to deposit a doped packaging film comprising a thickness within a range of 25 pm to 200 pm.

19. The processing tool of claim 17, wherein the silicon oxide precursor comprises tetraethyl orthosilicate (TEOS), and wherein the dopant precursor comprises one or more of a boron-containing precursor or a phosphorus-containing precursor.

20. The processing tool of claim 17, wherein the controller is configured to operate the radiofrequency power source to form a plasma using first plasma conditions to deposit a first film layer over the die comprising a first stress, and form a plasma using second plasma conditions to deposit a second film layer on the first film layer, the second film layer comprising a second stress that is different from the first stress.

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