Radio frequency front-end module, radio frequency processing circuit and communication device

Abstract

Provided in the present application are a radio frequency front-end module, a radio frequency processing circuit and a communication device. The radio frequency front-end module comprises a first filter circuit and a second filter circuit. The second filter circuit comprises a filter component and a radio frequency load element, the filter component being connected between an input end of the first filter circuit and a first end of the radio frequency load element, and a second end of the radio frequency load element being connected to a ground end. In this way, the radio frequency load element can control the impedance in a certain band, such that the impedance in the band can be matched with the in-band impedance of the output end side of the filter component, and then a passband of the filter component is transmitted to the ground end, thereby eliminating reflection at a first transmission end. When the two filter circuits are arranged in a receiving pathway and a high-power signal in a transmitting pathway leaks into the receiving pathway, reflection at the input end of the first filter circuit in the receiving pathway can be avoided, thereby improving the receiving performance of the radio frequency front-end module.

Description

A radio frequency front-end module, a radio frequency processing circuit, and a communication device.

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese Patent Application No. 202410932720.5, filed on July 11, 2024, entitled "A Radio Frequency Front-End Module, Radio Frequency Processing Circuit and Communication Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of terminal technology, and in particular to a radio frequency front-end module, radio frequency processing circuit and communication equipment. Background Technology

[0004] Communication equipment generally includes a baseband circuit and a radio frequency (RF) system. Processing received RF signals or transmitting RF signals is achieved through the RF system, which comprises an RF transceiver unit, an RF front-end module, and an antenna device. The baseband circuit is coupled to the RF transceiver unit, which is coupled to the RF front-end module, which is also coupled to the antenna device. The RF front-end module includes a transmit path and a receive path. The transmit path can be used to transmit RF signals of various frequency bands to the antenna device. The receive path can be used to receive RF signals of various frequency bands from the antenna device.

[0005] However, in the RF front-end module, high-power signals in the transmitting path may partially leak into the receiving path, causing reflections at the input of the filter in the receiving path. This can trigger a nonlinear response in the receiving path, leading to performance degradation and making it impossible to effectively process the RF signals received from the antenna device. Summary of the Invention

[0006] This application provides a radio frequency front-end module, a radio frequency processing circuit, and a communication device to prevent high-power signals in the transmitting path of the radio frequency front-end module from leaking into the receiving path and causing reflection in the receiving path, thereby improving the receiving performance of the radio frequency front-end module.

[0007] In a first aspect, embodiments of this application provide a radio frequency (RF) front-end module, comprising: a first filter circuit, the input terminal of which is connected to a first transmission terminal in the RF front-end module, and the output terminal of which is connected to a second transmission terminal in the RF front-end module; and a second filter circuit, comprising a filter component and an RF load element, the filter component being connected between the input terminal of the first filter circuit and a first terminal of the RF load element, and the second terminal of the RF load element being connected to a ground terminal. Thus, the RF load element can control the impedance within a certain frequency band, allowing the impedance within that frequency band to match the in-band impedance at the output terminal of the filter component. When impedance matching occurs, the passband frequency of the filter component can be transmitted to the ground terminal, thereby eliminating reflection at the first transmission terminal. When both filter circuits are located in the receiving path, and a high-power signal in the transmitting path leaks into the receiving path, reflection at the input terminal of the first filter circuit in the receiving path can be avoided, thereby preventing the generation of a nonlinear response in the receiving path and improving the receiving performance of the RF front-end module.

[0008] In this embodiment, the first signal path can be a receiving path and the second signal path can be a transmitting path; alternatively, when there are multiple receiving paths, the first signal path can be one of the receiving paths and the second signal path can be another receiving path; alternatively, the first signal path can be a transmitting path and the second signal path can be a receiving path; or alternatively, when there are multiple transmitting paths, the first signal path can be one of the transmitting paths and the second signal path can be another transmitting path. Whenever a reflected signal appears at the input of the first filter circuit, a second filter circuit can be added to absorb the stopband frequency of the first filter circuit, eliminate reflections at the input of the first filter circuit, and improve the performance of the transmitting and receiving paths. Furthermore, the first signal path can also include a third transmission terminal, with the first transmission terminal located between the third transmission terminal and the second transmission terminal, and the first filter circuit located between the first transmission terminal and the second transmission terminal. In this case, the first signal path can also include other structures well-known to those skilled in the art, such as, but not limited to, amplifiers and duplexers, and these devices can be located between the third transmission terminal and the first transmission terminal. Specific devices can be added according to actual needs, and no specific limitations are made here.

[0009] Furthermore, by setting a second filter circuit, the difference between the in-band impedance and the out-of-band impedance of the first transmission end can be reduced or made approximately the same. This avoids the generation of reflected signals when out-of-band frequencies are incident on the input end of the first filter circuit due to a large difference between the in-band and out-of-band impedances. This prevents the reflected signals from causing intermodulation distortion in the first signal path and degrading its performance, thereby improving the performance of the first signal path. It also allows for control of the in-band and out-of-band impedances. For example, the in-band impedance can be, but is not limited to, 50Ω, while the out-of-band impedance can be, but is not limited to, 40Ω, 45Ω, 50Ω, 55Ω, or other resistance values, and can be set according to actual needs; no specific limitation is made here.

[0010] Optionally, the passband frequency of the first filter circuit is different from that of the filter component. This allows the filter component to absorb the reflected signal at the input end of the first filter circuit, which helps to create a reflection-free state at the first transmission end and improves the performance of the RF front-end module.

[0011] Optionally, the second filter circuit includes a filter component and an RF load element. The filter component is connected between the input terminal of the first filter circuit and the first terminal of the RF load element, and the second terminal of the RF load element is connected to the ground terminal. In this way, the RF load element can provide a matching impedance for the filter component, so that the passband frequency band of the filter component can be transmitted to the ground terminal through the RF load element, thereby absorbing the reflected signal at the input terminal of the first filter circuit to eliminate reflection.

[0012] Alternatively, the implementation of the filtering component can include the following:

[0013] The first type: The filtering component includes a first trapezoidal filter, in which the cascade order of the acoustic resonators is no greater than 20. Further, the cascade order of the acoustic resonators in the first trapezoidal filter is no greater than 10, such as, but not limited to, other values ​​like 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. The specific value can be set according to actual needs and is not limited here.

[0014] The second type: The filtering component includes at least one DMS filter, and the number of at least one DMS filter is no more than 10. Further, the number of at least one DMS filter is no more than 5, for example, but not limited to, cascade orders of 1, 2, 3, 4, 5, etc., which can be set according to actual needs and are not limited here. Furthermore, when multiple DMS filters are set, they are connected in parallel.

[0015] The third type: The filtering component includes a first trapezoidal filter and at least one DMS filter. The number of at least one DMS filter is no more than 10, and the cascade order of the acoustic resonators in the first trapezoidal filter is no more than 20. Further, the number of at least one DMS filter is no more than 5, such as, but not limited to, 1, 2, 3, 4, 5, etc.; further, the cascade order of the acoustic resonators in the first trapezoidal filter is no more than 10, such as, but not limited to, cascade orders of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, etc., which can be set according to actual needs and are not limited here. Furthermore, when multiple DMS filters are set, each DMS filter is connected in parallel and then in series with the first trapezoidal filter.

[0016] Of course, in addition to the structures described above, the filtering component can also be implemented using other devices known to those skilled in the art that can perform filtering functions, such as, but not limited to, dielectric filters, MEMS resonators, etc., which are not limited here.

[0017] Based on the specific structure of the filtering components described above, the filter can also adopt a similar configuration. For example, the filter may include at least one of a second trapezoidal filter and a DMS filter. When including both a second trapezoidal filter and a DMS filter, the cascade order of the acoustic resonators in the second trapezoidal filter is no greater than 10, the number of DMS filters is no greater than 20, and each DMS filter is connected in parallel and then in series with the second trapezoidal filter. Furthermore, when the filtering components include a first trapezoidal filter and the filter includes a second trapezoidal filter, the cascade order of the acoustic resonators in the second trapezoidal filter is greater than the cascade order of the acoustic resonators in the first trapezoidal filter. In other words, if the filter includes a second trapezoidal filter, it can be considered that the first filtering circuit includes a second trapezoidal filter, the cascade order of the acoustic resonators in the first trapezoidal filter is the first order, and the cascade order of the acoustic resonators in the second trapezoidal filter is the second order, where the second order is greater than the first order. In this way, the first filter circuit can achieve out-of-band suppression and low in-band insertion loss. Since the purpose of the filter component is to absorb signals in the out-of-band frequency band of the first filter circuit, the requirement for in-band insertion loss is low. As a result, the cascade order of the acoustic resonator in the first trapezoidal filter can be set to be smaller, thereby reducing the manufacturing cost of the RF front-end module.

[0018] Optionally, a filter component and an RF load element may be provided, and the filter component and the RF load element are connected in series between the first transmission end and the ground end.

[0019] Alternatively, the second filtering circuit includes multiple filtering components and at least one RF load element. That is, multiple filtering components and at least one RF load element can be provided, with each RF load element connected to at least a portion of the filtering components. Different filtering components have different passband frequencies. The second filtering circuit also includes an impedance matching network located between the RF load element and the connected multiple filtering components. When at least one RF load element is provided, the number of filtering components can be greater than the number of RF load elements, ensuring that each RF load element is connected to at least one filtering component. Furthermore, the passband signal extracted by each filtering component can be transmitted to the ground terminal through the connected RF load element. This reduces the number of RF load elements to some extent, thereby lowering the manufacturing cost of the RF front-end module. Moreover, when the impedance matching network is located between the RF load element and the connected multiple filtering components, the impedance of the RF load element can be matched with the in-band impedance of the output terminals of each connected filtering component. This prevents interference between the passband frequencies of different filtering components when passing through the RF load element, allowing the passband frequencies of multiple filtering components to be transmitted to the ground terminal through the same RF load element, achieving effective absorption of reflected signals. Alternatively, when multiple RF load elements are provided, the number of filter components can be equal to the number of RF load elements, so that each filter component is connected to one RF load element. In other words, the corresponding filter component and RF load element are connected in series to form an absorption branch, and each absorption branch is connected in parallel between the first transmission terminal and the ground terminal. This allows each filter component to be matched with an RF load element, thereby ensuring that the passband signal extracted by each filter component can be transmitted to the ground terminal, avoiding transmission obstruction due to impedance mismatch of the RF load elements, further eliminating reflection at the first transmission terminal, and further improving the performance of the first signal path.

[0020] Optionally, the first filtering circuit includes at least one of a bandpass filter, a low-pass filter, and a high-pass filter; the passband frequency bands of the filtering components, the bandpass frequency bands of the bandpass filter, the low-pass filter, and the high-pass filter are all different. Thus, the relevant frequency band signals can be extracted through the first filtering circuit, achieving the function of the first filtering circuit.

[0021] The first filtering circuit includes filters, which can be any one of the following: bandpass filter, low-pass filter, high-pass filter, and stopband filter. The passband frequency of this filter is the passband frequency of the first filtering circuit. There can be one filter; or, there can be N filters, where N is an integer greater than 1. In this case, the multiple filters can be combined in the following ways: if the filter is a bandpass filter, then there are N bandpass filters, meaning the first filtering circuit includes multiple bandpass filters; or, if the filter is a bandpass filter or a low-pass filter, then there are N-1 bandpass filters and one low-pass filter; or, if the filter is a bandpass filter or a high-pass filter, then there are N-1 bandpass filters and one high-pass filter.

[0022] Furthermore, taking an example where multiple filters are used, each being a bandpass filter, the first filtering circuit includes multiple bandpass filters. When there is only one second transmission terminal, the bandpass filters are connected in parallel, and the passband frequencies of different bandpass filters are different. In this way, the first filtering circuit can transmit signals across multiple frequency bands, and the second filtering circuit can absorb the out-of-band frequencies of the first filter film, thereby eliminating reflected signals at the first transmission terminal and improving the performance of the first signal path. This also reduces the number of second transmission terminals, simplifying the structure of the RF front-end module and lowering its manufacturing cost. Alternatively, when there are multiple second transmission terminals, and the number of second transmission terminals is less than the number of bandpass filters, some bandpass filters are connected to the same second transmission terminal. This not only enables signal transmission but also reduces the number of second transmission terminals to some extent, lowering the manufacturing cost of the RF front-end module. Or, when there are multiple second transmission terminals, and the number of second transmission terminals equals the number of bandpass filters, different bandpass filters are connected to different second transmission terminals, allowing signals from different filters to be output through different ports, achieving precise signal transmission.

[0023] Secondly, embodiments of this application also provide a radio frequency (RF) processing circuit, which may include: an RF circuit and an RF front-end module as described in the first aspect and any of the embodiments described above, wherein the RF circuit is connected to the RF front-end module. Thus, based on the improved performance of the RF front-end module, the performance of the RF processing circuit will also be improved.

[0024] It should be understood that since the principle of this RF processing circuit in solving the problem is similar to that of the aforementioned RF front-end module in solving the problem, the implementation and technical effects of this RF processing circuit can be found in the implementation and technical effects of the aforementioned RF front-end module, and the repetitions will not be repeated.

[0025] Thirdly, embodiments of this application also provide a communication device, which may include: a baseband circuit, an antenna device, and a radio frequency processing circuit as described in the second aspect and any of the embodiments described above; the radio frequency processing circuit is connected to both the baseband circuit and the antenna device. Thus, by improving the performance of the radio frequency processing circuit, the performance of the communication device will also be improved.

[0026] It should be understood that since the principle by which this communication device solves the problem is similar to that of the aforementioned radio frequency processing circuit, the implementation and technical effects of this communication device can be found in the implementation and technical effects of the aforementioned radio frequency processing circuit, and the repetitions will not be repeated. Attached Figure Description

[0027] Figure 1 is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0028] Figure 2 is a schematic diagram of the structure of a radio frequency front-end module in the prior art;

[0029] Figure 3 is a schematic diagram of the structure of a radio frequency front-end module provided in an embodiment of this application;

[0030] Figure 4 is a schematic diagram of another radio frequency front-end module provided in an embodiment of this application;

[0031] Figure 5 is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of this application;

[0032] Figure 6 is a schematic diagram of another radio frequency front-end module provided in an embodiment of this application;

[0033] Figure 7 is a schematic diagram of the surface acoustic wave resonator provided in the embodiment of this application;

[0034] Figure 8 is a schematic diagram of the structure of the bulk acoustic resonator provided in the embodiment of this application;

[0035] Figure 9 is a schematic diagram of another radio frequency front-end module provided in an embodiment of this application;

[0036] Figure 10 is a schematic diagram of another radio frequency front-end module provided in an embodiment of this application;

[0037] Figure 11 is a schematic diagram of another radio frequency front-end module provided in an embodiment of this application.

[0038] Reference numerals: 100-Baseband circuit, 200-RF system, 210-RF transceiver unit, 220-RF front-end module, 221-Transmit path, 221a-First filter, 221b-Power amplifier, 222-Receive path, 222a-Duplexer, 222b-Low noise amplifier, 222c-Matching network, 222d-Second filter, 230-Antenna device, 10-First filter circuit, 10a-Filter, 11-Bandpass filter, 20-Second filter circuit, 21-Filter assembly, 22-RF load element, A0-Acoustic resonator, A1-DMS filter, A2-First trapezoidal filter, A4-Second trapezoidal filter, A3-Absorption branch, GND-Ground terminal, N1-First transmission terminal, N2-Second transmission terminal, N3-Third transmission terminal. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0040] It should be noted that the same reference numerals in the accompanying drawings of this application denote the same or similar structures, and therefore repeated descriptions of them will be omitted. Terms expressing position and direction described in this application are illustrative based on the accompanying drawings, but may be modified as needed, and all such modifications are included within the scope of protection of this application. The accompanying drawings of this application are for illustrating relative positional relationships only and do not represent actual scale.

[0041] The phrase "structure A is connected to structure B" as described in this application means that structure A and structure B can be directly connected, or indirectly connected; where direct connection means that structure A and structure B are in contact and connected, and indirect connection means that structure A is connected to structure B through structure C. Similarly, the phrase "structure A is coupled to structure B" as described in this application means that structure A and structure B can be directly coupled, or indirectly coupled; where direct coupling means that structure A and structure B are in contact and coupled, and indirect coupling means that structure A is coupled to structure B through structure C. The specific configuration can be determined according to actual needs, and this application does not impose any specific limitations.

[0042] To facilitate understanding of the technical solutions provided in the embodiments of this application, the application scenarios will be explained first below.

[0043] The technical solutions provided in this application can be widely applied to various communication devices with radio frequency (RF) functions. For example, these communication devices can be cellular phones, smartphones, handheld wireless devices with or without telephone functionality, wireless tablets, base stations, routers, satellites, etc. Base stations can include various forms of macro base stations, micro base stations, relay stations, access points, or remote radio units. It should be noted that the RF front-end module proposed in this application is intended for application, including but not limited to, in these and any other suitable types of communication devices with RF functions.

[0044] Figure 1 is a schematic diagram of a communication device provided in an embodiment of this application. Referring to Figure 1, the communication device may include a baseband circuit 100 and a radio frequency system 200, wherein the radio frequency system 200 is coupled to the baseband circuit 100. During signal transmission, the baseband circuit 100 can modulate the low-frequency baseband signal to be transmitted into a mid-to-high-frequency digital signal and send the mid-to-high-frequency digital signal to the radio frequency system 200; during signal reception, the baseband circuit 100 can demodulate the high-frequency electromagnetic wave signal from the radio frequency system 200 into a low-frequency baseband signal.

[0045] The radio frequency (RF) system 200 includes an RF transceiver unit 210, an RF front-end module 220, and an antenna device 230. The baseband circuit 100 is coupled to the RF transceiver unit 210, the RF transceiver unit 210 is coupled to the RF front-end module 220, and the RF front-end module 220 is also coupled to the antenna device 230. The RF front-end module 220 includes a transmit path 221 and a receive path 222. The number of transmit paths 221 and receive paths 222 can be one or more. The transmit path 221 can be used to transmit RF signals of various frequency bands to the antenna device 230. The receive path 222 can be used to receive RF signals of various frequency bands to receive the RF signals transmitted by the antenna device 230. It should be understood that the RF transceiver unit 210 and the RF front-end module 220 can be considered as an RF processing circuit. The RF processing circuit is not shown in Figure 1, but it is connected to the baseband circuit 100 and the antenna device 230 respectively.

[0046] During signal transmission, the RF transceiver unit 210 modulates the mid-to-high frequency digital signal from the baseband circuit 100 into a high-frequency electromagnetic wave signal (i.e., an RF signal). The RF front-end module 220 performs power amplification and filtering on this high-frequency electromagnetic wave signal, and then radiates the amplified and filtered signal through the antenna device 230. During signal reception, the RF front-end module 220 performs filtering and low-noise amplification on the high-frequency electromagnetic wave signal received by the antenna device 230. The RF transceiver unit 210 demodulates the filtered and low-noise amplified high-frequency electromagnetic wave signal into a mid-to-high frequency digital signal, and then sends the mid-to-high frequency digital signal to the baseband circuit 100.

[0047] Both the transmitting path 221 and the receiving path 222 can include filters. In addition, they can include, but are not limited to, other devices such as power amplifiers, RF switches, and low-noise amplifiers. The specific design can be tailored to actual needs and is not specifically limited here. Referring to Figure 2, the transmitting path 221 includes a power amplifier 221b, a first filter 221a, and a duplexer 222a coupled in sequence. The receiving path 222 includes a duplexer 222a, a low-noise amplifier 222b, a matching network 222c, and a second filter 222d coupled in sequence. The duplexer 222a in the transmitting path 221 and the receiving path 222 can be multiplexed; that is, a single duplexer 222a is provided so that the first filter 221a is connected to the antenna device 230 through this duplexer 222a. The low-noise amplifier 222b is also connected to the antenna device 230 via the duplexer 222a; the output of the second filter 222d is connected to the RF transceiver unit 210. In the receiving path 222, the RF signal received by the antenna device 230 is output to the low-noise amplifier 222b via the duplexer 222a, so that the low-noise amplifier 222b amplifies the RF signal. After passing through the matching network 222c, it is then filtered by the second filter 222d to remove unwanted frequency band signals before being output to the RF transceiver unit 210. However, the high-power signal in the transmitting path 221 will also partially leak into the receiving path 222. After passing through the low-noise amplifier 222b and the matching network 222c, it will be reflected at the input of the second filter 222d, thereby exciting the nonlinear response of the receiving path 222, causing the performance of the receiving path 222 to deteriorate, and making it impossible to effectively process the RF signal received by the antenna device 230.

[0048] To address this issue, this application provides an RF front-end module that avoids reflections at the input of a filter in the receiving path, thereby improving the performance of the receiving path. Specifically, the RF front-end module provided in this application includes: a first filter circuit, the input of which is connected to a first transmission terminal in the RF front-end module, and the output of which is connected to a second transmission terminal in the RF front-end module; and a second filter circuit, comprising a filter component and an RF load element, the filter component being connected between the input of the first filter circuit and a first terminal of the RF load element, and the second terminal of the RF load element being connected to a ground terminal. Thus, the RF load element can control the impedance within a certain frequency band, allowing the impedance within that band to match the in-band impedance at the output of the filter component. When impedance matching occurs, the passband frequency of the filter component can be transmitted to the ground terminal, thereby eliminating reflections at the first transmission terminal. When two filter circuits are located in the receiving path, and a high-power signal in the transmitting path leaks into the receiving path, reflections at the input of the first filter circuit in the receiving path can be avoided, thus preventing nonlinear responses from being generated in the receiving path and improving the receiving performance of the RF front-end module.

[0049] The radio frequency front-end module will be introduced below with reference to specific embodiments.

[0050] Figure 3 is a schematic diagram of the structure of a radio frequency front-end module provided in an embodiment of this application. Referring to Figure 3, the radio frequency front-end module may include a first signal path and a second signal path. The connection end between the first signal path and the second signal path can be denoted as the first transmission end N1. Of course, the first signal path also has a second transmission end N2. The first transmission end N1 and the second transmission end N2 are two different ports in the first signal path. In Figure 3, the first signal path includes a branch connecting the first transmission end N1 and the second transmission end N2, and a branch connecting the first transmission end N1 and the ground end GND. Therefore, the first signal path can be regarded as a path including these two branches. At this time, the RF front-end module may include: a first filter circuit 10, the input terminal of which is connected to the first transmission terminal N1, and the output terminal of which is connected to the second transmission terminal N2 of the first signal path. That is, the first filter circuit 10 is located in the branch connecting the first transmission terminal N1 and the second transmission terminal N2. The first filter circuit 10 is used to: extract the first frequency band signal from the RF signal input from the first transmission terminal N1 and output it to the second transmission terminal N2 of the first signal path; and a second filter circuit 20, the input terminal of which is connected to the first transmission terminal N1, and the output terminal of which is connected to the ground terminal GND. That is, the second filter circuit 20 is located in the branch connecting the first transmission terminal N1 and the second transmission terminal N2. In the branch between N1 and the ground terminal GND, both the first filter circuit 10 and the second filter circuit 20 are in the first signal path. The second filter circuit 20 is used to extract the third frequency band signal from the radio frequency signal and transmit it to the ground terminal GND. The radio frequency signal at the first transmission terminal N1 may include a first frequency band signal and a second frequency band signal coupled to the first transmission terminal N1. The frequency band of the second frequency band signal is different from that of the first frequency band signal, and the frequency band of the third frequency band signal overlaps with that of the second frequency band signal. Furthermore, the second frequency band signal coupled to the first transmission terminal N1 may be coupled to the first transmission terminal N1 from the second signal path or from the first signal path.In other words, the frequency band of the first frequency band signal can be considered as the passband of the first filter circuit 10, and the frequency band of the third frequency band signal can be considered as the passband of the second filter circuit 20. Therefore, the passband of the second filter circuit 20 is located outside the passband of the first filter circuit 10 (i.e., outside the band or stopband). Furthermore, the frequency band of the third frequency band signal can be exactly the same as or partially the same as the frequency band of the second frequency band signal. In this case, the second filter circuit 20 can transmit at least a portion of the second frequency band signal coupled to the first transmission terminal N1 to the ground terminal GND, improving the signal quality of the second frequency band signal. The reflection generated at the first transmission terminal N1; in other words, the second filter circuit 20 can absorb the signal in the passband outside the frequency band of the first filter circuit 10, so that the reflected signal at the first transmission terminal N1 is absorbed, which is conducive to forming a reflection-free state at the first transmission terminal N1. When the first signal path is the receiving path, the second signal path is the transmitting path, and the high-power signal in the transmitting path leaks into the receiving path, the reflection generated at the input terminal of the first filter circuit 10 in the receiving path can be avoided, thereby avoiding the excitation of nonlinear response in the receiving path, thus improving the receiving performance of the RF front-end module.

[0051] It should be understood that in this embodiment, the first signal path can be a receiving path and the second signal path can be a transmitting path; or, when there are multiple receiving paths, the first signal path can be one of the receiving paths and the second signal path can be another receiving path; or, the first signal path can be a transmitting path and the second signal path can be a receiving path; or, when there are multiple transmitting paths, the first signal path can be one of the transmitting paths and the second signal path can be another transmitting path; as long as a reflected signal appears at the input of the first filter circuit 10, a second filter circuit 20 can be added to absorb the stopband frequency band of the first filter circuit 10, eliminate the reflection at the input of the first filter circuit 10, and improve the performance of the transmitting path and the receiving path. Furthermore, the first signal path may also include a third transmission terminal N3, with the first transmission terminal N1 located between the third transmission terminal N3 and the second transmission terminal N2, and the first filter circuit 10 located between the first transmission terminal N1 and the second transmission terminal N2. In this case, the first signal path may also include other structures known to those skilled in the art, such as, but not limited to, amplifiers, duplexers, etc., and these devices may be located between the third transmission terminal N3 and the first transmission terminal N1. Specifically, relevant devices may be added according to actual needs, and no specific limitations are made here.

[0052] Furthermore, by setting the second filter circuit 20, the difference between the in-band impedance and the out-of-band impedance of the first transmission terminal N1 can be reduced or made approximately the same. This avoids the generation of reflected signals when the out-of-band frequency band is incident on the input terminal of the first filter circuit 10 due to a large difference between the out-of-band impedance and the in-band impedance. This prevents the reflected signals from causing intermodulation distortion in the first signal path and degrading the performance of the first signal path, thereby improving the performance of the first signal path. It also enables the control of the in-band impedance and the out-of-band impedance. For example, the in-band impedance can be, but is not limited to, 50Ω, and the out-of-band impedance can be, but is not limited to, other resistance values ​​such as 40Ω, 45Ω, 50Ω, and 55Ω. Other resistance values ​​can also be set according to actual needs, and are not specifically limited here.

[0053] For example, the first filtering circuit 10 includes a filter, through which a first frequency band signal can be extracted, thus realizing the function of the first filtering circuit 10. Specifically, the filter can be any one of a bandpass filter 11, a low-pass filter, a high-pass filter, or a stopband filter, and the passband frequency band of this filter is the passband frequency band of the first filtering circuit 10. It should be understood that Figure 3 illustrates an example using a bandpass filter 11, but this does not mean that the filter can only be a bandpass filter 11.

[0054] The second filtering circuit 20 may include a filtering component 21 and an RF load element 22. The filtering component 21 is connected between the first transmission terminal N1 (and the input terminal of the first filtering circuit 10) and the first terminal of the RF load element 22. The second terminal of the RF load element 22 is connected to the ground terminal GND. The filtering component 21 is used to extract the third frequency band signal from the RF signal and transmit it to the RF load element 22. Therefore, the passband of the filtering component 21 is different from the passband of the first filtering circuit 10. The RF load element 22 is used to transmit the third frequency band signal to the ground terminal GND. One filtering component 21 and one RF load element 22 may be provided. Thus, the filtering component 21 extracts the third frequency band signal, and the RF load element 22 provides a matching impedance to the filtering component 21 so that the third frequency band signal passing through the filtering component 21 can be transmitted to the ground terminal GND, thereby absorbing the third frequency band signal and eliminating reflection at the first transmission terminal N1.

[0055] It is worth noting that the RF load element 22 can be, but is not limited to, an RF load patch or an RF load head, and the RF load element 22 is different from a regular resistor. The RF load element 22 can control the impedance within a certain frequency band (such as the frequency band where the third frequency band signal is located), so that the impedance within this frequency band can be matched with the in-band impedance of the output terminal of the filter component 21. Only when the impedance is matched can the passband of the filter component 21 be transmitted to the ground terminal GND, thereby achieving the absorption of the third frequency band signal and eliminating the reflection at the first transmission terminal N1. If the RF load element 22 is replaced with a regular resistor, since a regular resistor does not have the specification of impedance within a certain frequency band, it cannot match the in-band impedance of the output terminal of the filter component 21. As a result, the resistor cannot transmit the passband of the filter component 21 to the ground terminal GND, but will reflect the passband back to the filter component 21, which may eventually lead to reflection to the input terminal of the first filter circuit 10, thus failing to achieve the purpose of eliminating the reflected signal at the input terminal of the first filter circuit 10. Similarly, if a regular resistor is placed between the input terminal of the first filter circuit 10 and the input terminal of the filter component 21, the resistor cannot match the in-band impedance of the input terminal of the first filter circuit 10. Therefore, the reflected signal cannot be transmitted to the filter component 21, and thus the reflected signal at the input terminal of the first filter circuit 10 cannot be eliminated. Therefore, by setting the filter component 21 and the RF load element 22, the function of the second filter circuit 20 can be realized, achieving the absorption of the third frequency band signal and eliminating the reflection at the first transmission terminal N1.

[0056] For ease of description, the passband of the filter is referred to as the first passband, and the passband of the filter component 21 is referred to as the second passband. The first passband can be smaller than the second passband, or the first passband can be larger than the second passband. In other words, the frequency band of the third frequency band signal can be smaller than the frequency band of the first frequency band signal, or the frequency band of the third frequency band signal can be larger than the frequency band of the first frequency band signal. The specific settings can be made according to actual needs and are not limited here.

[0057] For example, the filter component 21 may include the following configuration forms:

[0058] The filter component 21 may include a first trapezoidal filter A2, and the cascade order of the acoustic resonators A0 in the first trapezoidal filter A2 is no greater than 20. Further, the cascade order of the acoustic resonators A0 in the first trapezoidal filter A2 is no greater than 10, such as, but not limited to, cascade orders of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. The specific values ​​can be set according to actual needs and are not limited here. In Figure 4, the first trapezoidal filter A2 includes multiple acoustic resonators A0, some connected in series and some connected in parallel. The number of series-connected acoustic resonators A0 corresponds to the cascade order. Figure 4 shows two series-connected acoustic resonators A0, so the corresponding cascade order is 2. The node between two adjacent series-connected acoustic resonators A0 needs to be connected to one end of another acoustic resonator A0 to achieve the function of the filter component 21. Of course, Figure 4 is only an example; in actual implementation, the specific cascade order is not limited to that shown in Figure 4.

[0059] Alternatively, the filtering component 21 may include at least one DMS filter A1, and the number of DMS filters A1 may not exceed 10. Further, the number of DMS filters A1 may not exceed 5, for example, but not limited to, 1, 2, 3, 4, 5, or other values. The specific number can be set according to actual needs and is not limited here. Furthermore, when multiple DMS filters A1 are set, they are connected in parallel. As shown in Figure 5, a single DMS filter A1 is illustrated. Of course, Figure 5 is only an example; in actual implementation, the specific number of filters is not limited to that shown in Figure 5.

[0060] Alternatively, the filter component 21 may include a first trapezoidal filter A2 and at least one DMS filter A1. The number of DMS filters A1 is no more than 10, and further, the number of DMS filters A1 is no more than 5, such as, but not limited to, other values ​​such as 1, 2, 3, 4, 5, etc. The cascade order of the acoustic resonators in the first trapezoidal filter A2 is no more than 20, and further, the cascade order of the acoustic resonators in the first trapezoidal filter A2 is no more than 10, such as, but not limited to, other values ​​such as 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. The specific settings can be made according to actual needs and are not limited here. Furthermore, when multiple DMS filters A1 are provided, each DMS filter A1 is connected in parallel and then connected in series with the first trapezoidal filter A2. As shown in Figure 6, the figure shows a first trapezoidal filter A2 composed of two DMS filters A1 and an acoustic resonator with a cascade order of 3. Of course, Figure 6 is only an example, and in specific implementations, the specific cascade order is not limited to that shown in Figure 6.

[0061] Of course, in addition to the structures described above, the filter component 21 can also be implemented using other devices known to those skilled in the art that can perform filtering functions, such as, but not limited to, dielectric filters, MEMS resonators, etc., and is not limited here.

[0062] Based on the specific structure of the filter component 21 described above, the filter can also adopt a similar setting method. For example, the filter may include at least one of the second trapezoidal filter A4 and the DMS filter A1. When the second trapezoidal filter A4 and the DMS filter A1 are included, the cascade order of the acoustic resonator A0 in the second trapezoidal filter A4 is not greater than 20, the number of DMS filters A1 is not greater than 10, and each DMS filter A1 is connected in parallel and then connected in series with the second trapezoidal filter A4.

[0063] Furthermore, when the filter component 21 includes a first trapezoidal filter A2 and the filter includes a second trapezoidal filter A4, the cascade order of the acoustic resonators in the second trapezoidal filter A4 is greater than the cascade order of the acoustic resonators in the first trapezoidal filter A2. In other words, the inclusion of the second trapezoidal filter A4 in the filter can be considered as the inclusion of the second trapezoidal filter A4 in the first filter circuit 10. The cascade order of the acoustic resonators in the first trapezoidal filter A2 is the first order, and the cascade order of the acoustic resonators in the second trapezoidal filter A4 is the second order, where the second order is greater than the first order. This achieves the goal of out-of-band suppression and low in-band insertion loss in the first filter circuit 10. Since the filter component 21 aims to absorb signals in the out-of-band frequency band of the first filter circuit 10, the requirement for in-band insertion loss is low. Consequently, the cascade order of the acoustic resonators in the first trapezoidal filter A2 can be set smaller, thereby reducing the manufacturing cost of the RF front-end module. For example, as shown in Figure 4, the filter may include a second trapezoidal filter A4, where the cascade order of the second trapezoidal filter A4 is 4, while the cascade order of the acoustic resonators in the first trapezoidal filter A2 is 2. In this case, the cascade order of the acoustic resonators in the second trapezoidal filter A4 is greater than that in the first trapezoidal filter A2. Of course, this is just an example illustrated in Figure 4. The cascade order of the acoustic resonators in the trapezoidal filters within the filter and filter assembly 21 can be set according to actual needs and is not limited here.

[0064] Furthermore, referring to Figure 4, an impedance matching network can also be provided in the first signal path, and the impedance matching network can be set in at least one of the following locations: between the first filter circuit 10 and the first transmission terminal N1, between the first filter circuit 10 and the second transmission terminal N2, between the first transmission terminal N1 and the third transmission terminal N3, between the filter component 21 and the first transmission terminal N1, and between the filter component 21 and the RF load element 22. The impedance matching network can achieve matching of in-band impedance and out-of-band impedance. Figure 4 only shows the impedance matching networks set between the first filter circuit 10 and the first transmission terminal N1, between the first filter circuit 10 and the second transmission terminal N2, and between the first transmission terminal N1 and the third transmission terminal N3. Impedance matching networks at other locations are not shown, but this does not mean that impedance matching networks cannot be set at these locations. Of course, the first signal path may not require any impedance matching network to meet the needs of different application scenarios; and the second signal path may also have an impedance matching network, although it is not shown in Figure 4. This application does not limit the specific structure of the second signal path; the structure set in the second signal path can be configured according to actual needs and is not limited here. It should be understood that the impedance matching network can be, but is not limited to, at least one of an inductor and a capacitor; the specific structure of the impedance matching network can be set according to actual needs and is not limited here.

[0065] The acoustic resonator can be a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator. For SAW resonators, the specific structure can include the following:

[0066] As shown in Figure 7(a), which is a top view of a surface acoustic wave (SAW) resonator, the SAW resonator may include a piezoelectric substrate and a first electrode and a second electrode disposed on the piezoelectric substrate. The first electrode and the second electrode form interdigitated electrodes. The first electrode can convert radio frequency (RF) signals into SAW waves (as shown by the dashed arrows in Figure 7), and the SAW waves can propagate on the surface of the piezoelectric substrate. The second electrode can convert the SAW waves into RF signals and output them, thereby achieving the purpose of filtering unnecessary signals and interference and improving signal quality. It should be understood that since RF signals are AC signals, the first electrode can convert RF signals into SAW waves and vice versa at different times. The second electrode can do the same, and at the same time, the functions of the first electrode and the second electrode are different. For example, when the function of the first electrode is to convert SAW waves into RF signals, the function of the second electrode is to convert RF signals into SAW waves; or, when the function of the first electrode is to convert RF signals into SAW waves, the function of the second electrode is to convert SAW waves into RF signals, thereby achieving the filtering function and also enabling the transmission of RF signals.

[0067] Alternatively, as shown in Figure 7(b), which is a cross-sectional view of a surface acoustic wave (SAW) resonator, the SAW resonator may include: a substrate, and a Bragg reflector layer, a piezoelectric layer, and an electrode layer sequentially disposed on the substrate. The electrode layer includes a first electrode and a second electrode. The first electrode and the second electrode are not shown in Figure 7(b). The Bragg reflector layer includes: a low acoustic impedance layer and a high acoustic impedance layer stacked together. The low acoustic impedance layer is disposed between the high acoustic impedance layer and the substrate. The internal structure of the Bragg reflector layer is not shown in Figure 7(b). This structure can not only filter out unnecessary signals, but also reflect the leakage waves incident on the Bragg reflector layer, thereby improving the quality factor of the SAW resonator.

[0068] Of course, the above only uses two structures as examples to illustrate the structure of surface acoustic wave (SAW) resonators. However, this application does not limit the structure of SAW resonators; they can be any structure well-known to those skilled in the art. Furthermore, the DMS filter is essentially a type of SAW filter, and its specific structure is basically the same as that of the SAW resonator. The difference lies in that the DMS filter has more interfaces compared to the SAW resonator. The specific structure of the DMS filter can be configured according to actual needs and is not limited here.

[0069] For bulk acoustic resonators, the specific structures can include the following:

[0070] As shown in Figure 8(a), a bulk acoustic wave resonator may include: a substrate, and a functional layer, a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. A cavity is provided in the functional layer. The functions of the first electrode and the second electrode are similar to those of the first electrode and the second electrode in the surface acoustic wave resonator above, and will not be described in detail here. Since the first electrode and the second electrode are located on opposite sides of the piezoelectric layer, the generated sound wave passes through the piezoelectric layer and forms a bulk acoustic wave, as shown by the dashed arrow in Figure 8(a). Furthermore, the cavity can have a reflective effect, thereby improving the quality factor of the bulk acoustic wave resonator.

[0071] Alternatively, as shown in Figure 8(b), the bulk acoustic wave resonator may include: a substrate, and a Bragg reflector layer, a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. The Bragg reflector layer includes: multiple low acoustic impedance layers and multiple high acoustic impedance layers stacked together, with the low acoustic impedance layers and high acoustic impedance layers alternately disposed. The internal structure of the Bragg reflector layer is not shown in Figure 8(b). By reflecting the leakage wave incident on the Bragg reflector layer, the quality factor of the surface acoustic wave resonator can be improved.

[0072] Of course, the above are just two examples to illustrate the structure of a bulk acoustic resonator. However, the structure of the bulk acoustic resonator is not limited in this application. The bulk acoustic resonator can be any structure known to those skilled in the art.

[0073] Figure 9 is a schematic diagram of another RF front-end module provided in this embodiment. Referring to Figure 9, the RF front-end module in this embodiment is basically the same as the RF front-end module described in Figures 3 to 8 of the aforementioned embodiments. The differences include: multiple filter components 21 are provided, and the passband frequency bands of different filter components 21 are different; at least one RF load element 22 is provided, and the number of filter components 21 is greater than the number of RF load elements 22, so that each RF load element 22 is connected to at least one filter component 21. That is, some filter components 21 share one RF load element 22 to transmit signals to the ground terminal GND, and some filter components 21... Signals are transmitted to the ground terminal GND through other RF load elements 22. At this time, for multiple filter components 21 connected to the same RF load element 22, an impedance matching network can be set between the RF load element 22 and the multiple connected filter components 11. Through this impedance matching network, the impedance of the RF load element 22 can be matched with the in-band impedance of the output terminals of each connected filter component 11, preventing mutual interference between the passband frequencies of different filter components 11 when passing through the RF load element 22. This allows the passband frequencies of multiple filter components 11 to be transmitted to the ground terminal GND through the same RF load element 22, achieving effective absorption of reflected signals. Furthermore, the number of RF load elements 22 can be reduced to some extent, thereby reducing the manufacturing cost of the RF front-end module. Figure 9 illustrates an example with three filter components 21 and two RF load elements 22; the filter components 21 and RF load elements 22 are not limited to those shown in Figure 9 and can be configured according to actual needs, which is not limited here.

[0074] It should be understood that the RF front-end module in this embodiment is similar in structure to the RF front-end module described in Figures 3 to 8 in the previous embodiments. For details, please refer to the relevant descriptions in the previous embodiments. Repeated parts will not be repeated.

[0075] Figure 10 is a schematic diagram of another RF front-end module provided in the embodiment of this application. Referring to Figure 10, the RF front-end module in this embodiment is basically the same as the RF front-end module described in Figures 3 to 8 of the aforementioned embodiments. The differences include: multiple filter components 21 are provided, and the passband frequency bands of different filter components 21 are different; multiple RF load elements 22 are provided, and the number of filter components 21 is equal to the number of RF load elements 22, so that each filter component 21 is connected to one RF load element 22. In other words, the corresponding filter component 21 and RF load element 22 are connected in series to form an absorption branch A3, and each absorption branch A3 is connected in parallel between the first transmission terminal N1 and the ground terminal GND. This allows each filter component 21 to be matched with an RF load element 22, and the impedance of each RF load element 22 can be matched with the in-band impedance of the corresponding filter component 21 at the output end. This ensures that the signal extracted from the passband frequency band by each filter component 21 can be transmitted to the ground terminal GND, avoiding transmission obstruction due to impedance mismatch of the RF load element 22, thereby further eliminating reflection at the first transmission terminal N1 and further improving the performance of the signal path.

[0076] It should be understood that the RF front-end module in this embodiment is similar in structure to the RF front-end module described in Figures 3 to 8 in the previous embodiments. For details, please refer to the relevant descriptions in the previous embodiments. Repeated parts will not be repeated.

[0077] Figure 11 is a schematic diagram of another RF front-end module provided in an embodiment of this application. Referring to Figure 11, the RF front-end module in this embodiment is basically the same in structure as any of the RF front-end modules described in Figures 3 to 10 of the aforementioned embodiments, with the following differences: the first filtering circuit 10 includes multiple filters 10a. For example, as shown in Figure 11, the passband frequency bands of different filters 10a are different, and the passband frequency bands of each filter 10a are different from the frequency band of the second frequency band signal. In this way, the first filtering circuit 10 can transmit signals of multiple frequency bands, and the second filtering circuit 20 can absorb the out-of-band frequency bands of the first filter film, thereby eliminating the reflected signal at the first transmission terminal N1 and improving the performance of the first signal path.

[0078] Furthermore, the first signal path can have one second transmission terminal N2, as shown in Figure 11(a). In this case, each filter 10a is connected in parallel to the second transmission terminal N2, so that the signals output by each filter 10a are all output through the same port (i.e., N2). Alternatively, the first signal path can have multiple second transmission terminals N2, and the number of second transmission terminals N2 is less than the number of filters 10a (not shown). In this case, each second transmission terminal N2 is connected to at least one filter 10a, so that the signals output by some filters 10a are output through different ports. Or, the first signal path can have multiple second transmission terminals N2, and the number of second transmission terminals N2 is equal to the number of filters 10a, as shown in Figure 11(b). In this case, different filters 10a are connected to different second transmission terminals N2, so that the signals output by different filters 10a are output through different ports.

[0079] Furthermore, when multiple filters 10a are provided, they will have multiple passband frequency bands. For ease of description, the passband frequency band of filter 10a is referred to as the first passband frequency band. At this time, the frequency band of the second frequency band signal can be located between two adjacent first passband frequency bands, so that the nonlinear intermodulation component can avoid falling within the first passband frequency band, thereby avoiding the excitation of the nonlinear response of the first signal path, reducing interference, and improving the performance of the first signal path.

[0080] It is worth noting that when there are N filters 10, and N is an integer greater than 1, the types of filters 10a can include the following: filter 10a is a bandpass filter, in which case there are N bandpass filters; or, filter 10a is a bandpass filter or a low-pass filter, in which case there are N-1 bandpass filters and one low-pass filter; or, filter 10a is a bandpass filter or a high-pass filter, in which case there are N-1 bandpass filters and one high-pass filter.

[0081] It should be understood that the RF front-end module in this embodiment is similar in structure to the RF front-end module described in Figures 3 to 10 of the foregoing embodiments. For details, please refer to the relevant descriptions in the foregoing embodiments. Repeated parts will not be repeated.

[0082] In summary, the first filtering circuit can include at least one of a bandpass filter, a low-pass filter, and a high-pass filter, and the passband frequencies of the filtering components, the bandpass filters, the low-pass filters, and the high-pass filters are all different, thereby eliminating reflected signals at the first transmission end and improving the performance of the first signal path. The specific structures included in the first filtering circuit can be configured according to actual needs and are not specifically limited here. For the number and configuration of the filtering components and RF load elements in the second filtering circuit, please refer to the description in the above embodiments. Furthermore, the configuration of the first and second filtering circuits is not mutually restrictive and can be freely combined to meet the design needs of different application scenarios, thus broadening the application range of the RF front-end module.

[0083] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of the embodiments of this application. Therefore, if these modifications and variations to the embodiments of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. A radio frequency front-end module, characterized in that, include: A first filtering circuit, wherein the input terminal of the first filtering circuit is connected to the first transmission terminal in the RF front-end module, and the output terminal of the first filtering circuit is connected to the second transmission terminal in the RF front-end module; The second filtering circuit includes a filtering component and an RF load element. The filtering component is connected between the input terminal of the first filtering circuit and the first terminal of the RF load element, and the second terminal of the RF load element is connected to the ground terminal.

2. The radio frequency front-end module as described in claim 1, characterized in that, The passband frequency band of the first filter circuit is different from that of the filter component.

3. The radio frequency front-end module as described in claim 1 or 2, characterized in that, The second filtering circuit includes a plurality of the filtering components and at least one of the radio frequency load elements, each of the radio frequency load elements being connected to at least a portion of the filtering components, and the passband frequency bands of the different filtering components being different; The second filter circuit further includes an impedance matching network, which is disposed between the RF load element and the plurality of connected filter components.

4. The radio frequency front-end module as described in any one of claims 1-3, characterized in that, The filtering component includes a first trapezoidal filter, wherein the cascade order of the acoustic resonators in the first trapezoidal filter is no greater than 20.

5. The radio frequency front-end module as described in any one of claims 1-3, characterized in that, The filtering component includes at least one DMS filter, and the at least one DMS filter is arranged in parallel, and the number of the at least one DMS filter is no more than 10.

6. The radio frequency front-end module as described in any one of claims 1-3, characterized in that, The filtering component includes a first trapezoidal filter and at least one DMS filter, wherein the at least one DMS filter is connected in parallel and then in series with the first trapezoidal filter; the number of the at least one DMS filter is no more than 10, and the cascade order of the acoustic resonators in the first trapezoidal filter is no more than 20.

7. The radio frequency front-end module as described in claim 4 or 6, characterized in that, The cascade order of the acoustic resonators in the first trapezoidal filter is the first order; The first filter circuit includes a second trapezoidal filter, wherein the cascade order of the acoustic resonators in the second trapezoidal filter is a second order, which is greater than the first order.

8. The radio frequency front-end module as described in any one of claims 1-7, characterized in that, The first filtering circuit includes at least one of a bandpass filter, a low-pass filter, and a high-pass filter; The passband frequency bands of the filtering component, the bandpass filter, the low-pass filter, and the high-pass filter are all different.

9. The radio frequency front-end module as described in claim 8, characterized in that, The first filtering circuit includes multiple bandpass filters, and the passband frequency bands of the different bandpass filters are different.

10. A radio frequency processing circuit, characterized in that, include: The radio frequency circuit, and the radio frequency front-end module as described in any one of claims 1-9, wherein the radio frequency circuit is connected to the radio frequency front-end module.

11. A communication device, characterized in that, include: Baseband circuit, antenna device, and radio frequency processing circuit as described in claim 10; The radio frequency processing circuit is connected to the baseband circuit and the antenna device, respectively.

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