Electronic device, electronic assembly, lead frame, and method for producing an electronic device

Abstract

An electronic device comprises a carrier having a die bond pad and a separate first wire bond pad embedded into a mold body. Upper sides and lower sides of the die bond pad and the first wire bond pad are at least partly not covered by the mold body. A first semiconductor chip is arranged on the up- per side of the die bond pad. The first semiconductor chip is connected to the upper side of the first wire bond pad by a first bond wire. The first semiconductor chip protrudes over two opposite broadsides of the carrier.

Description

[0001] ELECTRONIC DEVICE , ELECTRONIC ASSEMBLY , LEAD FRAME , AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE

[0002] DESCRIPTION

[0003] The present invention relates to an electronic device , to an electronic assembly, to a lead frame , and to a method for producing an electronic device .

[0004] This patent application claims priority to German patent application 10 2024 119 892 . 3 , the disclosure of which is hereby incorporated by reference .

[0005] Electronic devices comprising a carrier based on a lead frame are known in the state of the art . Electronic devices having a Quad Flat No Leads ( QFN) package are one example .

[0006] It is an obj ect of the present invention to provide an electronic device . It is a further obj ect of the present invention to provide an electronic assembly . It is a further obj ect of the present invention to provide a lead frame . It is a further obj ect of the present invention to provide a method for producing an electronic device . These obj ectives are accomplished by an electronic device , an electronic assembly, a lead frame , and a method for producing an electronic device according to the independent claims . Di f ferent variants are disclosed in the dependent claims .

[0007] An electronic device comprises a carrier having a die bond pad and a separate first wire bond pad embedded into a mold body . Upper sides and lower sides of the die bond pad and the first wire bond pad are at least partly not covered by the mold body . A first semiconductor chip is arranged on the upper side of the die bond pad . The first semiconductor chip is connected to the upper side of the first wire bond pad by a first bond wire . The first semiconductor chip protrudes over two opposite broadsides of the carrier . This electronic device allows to be placed next to a further electronic device of the same kind in a way that the two first semiconductor chips of the two electronic devices are arranged very close to each other . At the same time , the lower sides of the bond pads of the two electronic devices are suf ficiently spaced to prevent a short circuit between the two electronic devices . This arrangement is supported by the first semiconductor chip being wider than the carrier .

[0008] In a variant of the electronic device , the broadsides of the carrier are entirely formed by the die bond pad . In other words , the mold body does not extend beyond the die bond pad on the broadsides of the carrier . Advantageously, this allows to form the carrier narrower than the first semiconductor chip arranged on the die bond pad of the carrier .

[0009] In a variant of the electronic device , the first wire bond pad is arranged between two sections of the die bond pad along a first narrow side of the carrier . Advantageously, this arrangement of the first wire bond pad and the die bond pad allows to form the broadsides of the carrier entirely by the die bond pad .

[0010] In a variant of the electronic device , the die bond pad and the first wire bond pad are separated by a first pad trench . The first pad trench is filled by the mold body . In this way, the die bond pad and the first wire bond pad of the carrier of the electronic device are held together and electrically isolated from each other by the mold body .

[0011] In a variant of the electronic device , the first pad trench is U-shaped . Advantageously, this allows the first wire bond pad to be partially surrounded by the die bond pad .

[0012] In a variant of the electronic device , a first upper part of the mold body is arranged on the upper side of the die bond pad and the upper side of the first wire bond pad . The first upper part of the mold body may facilitate the handling of the electronic device .

[0013] In a variant of the electronic device , a second part of the mold body is arranged on the upper side of the die bond pad .

[0014] The first upper part and the second upper part of the mold body may be arranged at opposite ends of the electronic device , for example . The second upper part may also facilitate the handling of the electronic device , for example .

[0015] In a variant of the electronic device , the first semiconductor chip protrudes over a second narrow side of the carrier . This results in a particularly compact design of the electronic device and may allow mounting the electronic device next to a further electronic device of the same kind in a way that the second narrow sides of the carriers of the two electronic devices face each other and that the first semiconductor chips of the two electronic devices are arranged very close to each other .

[0016] In a variant of the electronic device , the carrier comprises a second wire bond pad that is separate from the die bond pad and the first wire bond pad . A second semiconductor chip is arranged on the upper side of the die bond pad . The second semiconductor chip is connected to the upper side of the second wire bond pad by a second bond wire . The second semiconductor chip protrudes over the two broadsides of the carrier . In this variant of the electronic device , the first semiconductor chip and the second semiconductor chip may be arranged very close to each other .

[0017] In a variant of the electronic device , the second wire bond pad is arranged between two sections of the die bond pad along a second narrow side of the carrier . This may result in a mirror symmetric and / or a rotationally symmetric design of the carrier of the electronic device . In a variant of the electronic device , a further semiconductor chip is arranged on the die bond pad . The further semiconductor chip may be a protection diode chip that protects the first semiconductor chip from damage caused by electrostatic discharge .

[0018] An electronic assembly comprises a plurality of electronic devices of the aforementioned kind . Advantageously, the electronic devices of this electronic assembly can be arranged so that the first semiconductor chips of the electronic devices are positioned very close to each other while the lower sides of the die bond pads and the first wire bond pads of the electronic devices are spaced suf ficiently apart to prevent an electric short circuit between the electronic devices .

[0019] A lead frame comprises a plurality of device sections arranged in rows and columns of a matrix pattern . Each device section comprises a die bond pad and a first wire bond pad . The die bond pad and the first wire bond pad are partly separated by a first pad trench . The die bond pads of neighbouring device sections in a common row are partly separated by device trenches . The first pad trenches and the device trenches are not connected .

[0020] This lead frame allows to produce a plurality of electronic devices of the aforementioned kind . The lead frame can be embedded into a mold body in a way that the fist pad trenches are filled by the material of the mold body but the device trenches are not filled by the material of the mold body .

[0021] This allows to separate the device section on the device trenches .

[0022] The first pad trenches and the device trenches are entirely separated by sections of the lead frame having the full thickness of the lead frame . This allows to embed the lead frame into a mold body in a way that the first pad trenches are filled by the material of the mold body and the device trenches are not filled by the material of the mold body and prevents a leakage of the material of the mold body between the first pad trenches and the device trenches .

[0023] One variant of the lead frame comprises a plurality of link sections . Each link section connects the die bond pads and the first wire bond pads of one row of device sections . In this way, the lead frame is held together by the link sections before the device sections are separated from each other .

[0024] In a variant of the lead frame , each link section connects the die bond pads of two neighbouring rows of device sections . This allows to separate the device sections by removing the link sections .

[0025] A method for producing an electronic device comprises providing a lead frame as speci fied above , partly embedding the lead frame into a mold body, wherein upper sides and lower sides of the die bond pads and the first wire bond pads are at least partly not covered by the mold body, arranging one first semiconductor chip on the upper side of the die bond pad of each device section, connecting the first semiconductor chip of each device section to the upper side of the respective first wire bond pad by one first bond wire , and separating the device sections by sawing to form carriers of a plurality of electronic devices , wherein the first semiconductor chip of each electronic device protrudes over two opposite broadsides of the carrier .

[0026] This method allows to produce a plurality of electronic devices simultaneously in a cost-ef fective manner . The electronic devices allow to be placed next to each other in an electronic assembly in a way that the first semiconductor chips of neighbouring electronic devices are arranged very close to each other while the first wire bond pads and die bond pads of the neighbouring electronic devices are spaced suf ficiently far apart to prevent electric short circuits between the electronic devices of the electronic assembly . In a variant of the method, separating the device sections includes sawing along a plurality of first sawing lines and second sawing lines . Each first sawing line extends between two neighbouring rows of device sections . Each first sawing line extends through the first pad trenches and the device trenches of the device sections of one row . Each second sawing line extends between two neighbouring rows of device sections . Each second sawing line extends through the device trenches of the device sections of one row . Advantageously, in this way, the first sawing lines and the second sawing lines are all parallel to each other, allowing to separate the device sections by sawing in only one direction . This allows to execute the method in a particularly ef ficient way .

[0027] In a variant of the method, the lead frame comprises link sections as speci fied above . The mold body comprises several separate segments . Each segment is in contact with one link section . Advantageously, this allows to form the mold body in a way that leaves the device trenches free of the material of the mold body .

[0028] In a variant of the method, before separating the device sections , steps are carried out to separate the first wire bond pad of each device section by sawing, and to test at least one electronic device by electrically contacting the die bond pad and the first wire bond pad of the electronic device . In this way, the method advantageously allows to test the individual electronic devices in a state in which they are still connected in a common panel . This allows for an easy and efficient handling .

[0029] The above-described properties , features , and advantages of the invention, as well as the manner in which they are achieved, will become more clearly and comprehensively understandable through the following description of exemplary variants . These variants will be explained in more detail in conjunction with the drawings, in which, in schematic representation :

[0030] Fig. 1 shows a lead frame;

[0031] Fig. 2 shows the lead frame partly embedded into a mold body;

[0032] Fig. 3 shows the lead frame with first semiconductor chips and further semiconductor chips arranged on die bond pads of device sections of the lead frame;

[0033] Fig. 4 shows sawing lines along which the device sections will be separated;

[0034] Fig. 5 shows a top view of an electronic device formed from one device section;

[0035] Fig. 6 shows a sectional side view of the electronic device;

[0036] Fig. 7 shows an electronic assembly comprising several electronic devices;

[0037] Fig. 8 shows a sectional side view of two device sections before their separation;

[0038] Fig. 9 shows a top view of another variant of an electronic device ;

[0039] Fig. 10 shows a sectional side view of this variant of the electronic device;

[0040] Fig. 11 shows a top view of a further variant of an electronic device;

[0041] Fig. 12 shows a side view of this variant of the electronic device ;

[0042] Fig. 13 shows a top view of another variant of a lead frame; Fig . 14 shows this variant of the lead frame with first semiconductor chips and further semiconductor chips arranged on the die bond pads of the device sections of the lead frame ;

[0043] Fig . 15 shows a sectional side view of a variant of an electronic device formed from one device section of this lead frame ;

[0044] Fig . 16 shows a top view of a further variant of a lead frame ;

[0045] Fig . 17 shows a top view of a variant of an electronic device formed from a device section of that lead frame ; and

[0046] Fig . 18 shows a sectional side view of this variant of the electronic device .

[0047] Fig . 1 shows a schematic top view of a part of a lead frame 100 .

[0048] The lead frame 100 has a flat and thin shape with an upper side 101 and a lower side 102 opposite the upper side 101 . The lead frame 100 is composed of an electrically conductive material , typically a metal . The lead frame 100 may be manufactured from a flat sheet metal by removing parts of the material through etching, for example .

[0049] The lead frame 100 comprises a plurality of identical device sections 120 arranged in rows 111 and columns 112 of a matrix pattern 110 . The exemplary depiction of Fig . 1 shows two rows 111 and five columns 112 , but the lead frame 100 can include any number of rows 111 and columns 112 .

[0050] Each device section 120 comprises a die bond pad 130 and a first wire bond pad 140 . The die bond pad 130 and the first wire bond pad 140 are partly separated by a first pad trench 145 . In the example depicted in Fig . 1 , the first pad trench 145 is U-shaped but the first pad trench 145 may comprise other shapes in other variants . A topological U-shape is convenient . The first wire bond pad 140 is partly surrounded by the die bond pad 130 .

[0051] The die bond pads 130 of neighbouring device sections 120 in a common row 111 are separated by device trenches 125 . The device trenches 125 are not connected to each other and are not connected to the first pad trenches 145 . In particular, the first pad trenches 145 and the device trenches 125 are all entirely separated by sections of the lead frame 100 having the full thickness of the lead frame 100 measured in a direction perpendicular to the upper side 101 and the lower side 102 . In other words , there is no path between the first pad trenches 145 and the device trenches 125 where the thickness of the lead frame 100 is below the full thickness of the lead frame 100 along the entire path .

[0052] The lead frame 100 comprises a plurality of link sections 160 . Each link section 160 is arranged between two neighbouring rows 111 of device sections 120 . Each link section 160 connects the die bond pads 130 and the first wire bond pads 140 of one row 111 of device sections 120 . The link section 160 thus connects the first wire bond pad 140 and the corresponding die bond pad 130 of each device section 120 of that row 111 of device sections 120 , and connects the first wire bond pads 140 and die bond pads 130 of all device sections 120 of that row 111 .

[0053] Each link section 160 furthermore connects the die bond pads 130 of two neighbouring rows 111 of device sections 120 . This also means that the die bond pad 130 of each device section 120 is connected to two link sections 160 arranged on both sides of the corresponding row 111 of device sections 120 .

[0054] Device sections 120 arranged at the edges of the matrix pattern 110 may deviate from this description of the arrangement as is apparent to a person skilled in the art . Fig . 2 shows a schematic depiction of the lead frame 100 in a processing status that follows the depiction of Fig . 1 . The lead frame 100 has been partly embedded into a mold body 200 . The mold body 200 has been created from a molding material by a molding method such as trans fer molding or inj ection molding . The molding material may be a plastic material such as an epoxy, for example .

[0055] The upper sides 101 and the lower sides 102 of the die bond pads 130 and the first wire bond pads 140 of the device sections 120 of the lead frame 100 are at least partly not covered by the mold body 200 . In the example shown in Fig . 2 , the upper side 101 of the lead frame 100 is partly covered by the mold body 200 in such a way that also the die bond pads 130 and the first wire bond pads 140 of each device section 120 is partly covered by the mold body .

[0056] The mold body 200 comprises several separate segments 205 . Each segment 205 is in contact with one link section 160 of the lead frame 100 .

[0057] The first pad trench 145 of each device sections 120 is filled by the mold body 200 . The part of the mold body 200 filling the first pad trench 145 is connected to the segment 205 of the mold body 200 that is arranged on the link section 160 that is connected to the first wire bond pad 140 and die bond pad 130 of the respective device section 120 .

[0058] The device trenches 125 are not filled by the mold body 200 and remain free of the material of the mold body 200 . This is ensured by the first pad trenches 145 and the device trenches 125 being entirely separated by sections of the lead frame 100 having the full thickness of the lead frame 100 .

[0059] Fig . 3 shows a schematic top view of the lead frame 100 in a processing status that follows the depiction of Fig . 2 . One first semiconductor chip 300 has been arranged on the upper side 101 of the die bond pad 130 of each device section 120 . Each first semiconductor chip 300 comprises an upper side 301 and a lower side 302 that is opposed to the upper side 301 . The first semiconductor chips 300 are arranged on the die bond pads 130 such that the lower sides 302 are oriented towards the die bond pads 130 . The lower side 302 of each first semiconductor chip 300 may comprise an electric contact that may be electrically connected to the respective die bond pad 130 by a conductive material such as a solder or a conductive glue .

[0060] The first semiconductor chips 300 are wider than the die bond pads 130 measured in a direction parallel to the rows 111 of the matrix pattern 110 . In result , each first semiconductor chip 300 protrudes over two opposing edges of the respective die bond pad 130 and is partly situated over the two neighbouring device trenches 125 .

[0061] The first semiconductor chips 300 may be optoelectronic semiconductor chips , for example . In this case , the upper side 301 of each first semiconductor chip 300 may be adapted for emitting or receiving electromagnetic radiation such as visible light . The first semiconductor chips 300 may be lightemitting diode chips ( LED chips ) , for example .

[0062] In addition to the first semiconductor chips 300 , one further semiconductor chip 350 has been arranged on the die bond pad 130 of each device section 120 . The further semiconductor chip 350 may be an ESD chip that protects the respective first semiconductor chip 300 from getting damaged by electrostatic discharge . The further semiconductor chips 350 may be omitted, however .

[0063] Fig . 4 shows the lead frame 100 in a processing status that follows the depiction of Fig . 3 . The first semiconductor chip 300 of each device section 120 has been electrically connected to the first wire bond pad 140 of the respective device section 120 by arranging a first bond wire 320 between an electric contact arranged on the upper side 301 of the first semiconductor chip 300 and the upper side 101 of the first wire bond pad 140 . Additionally, the further semiconductor chip 350 of each device section 120 has been connected to the respective first wire bond pad 140 by a further bond wire 360 .

[0064] A converter element 310 has been arranged on the upper side 301 of each first semiconductor chip 300 . The converter element 310 serves to convert at least a part of light emitted at the upper side 301 of the respective first semiconductor chip 300 into light of a di f ferent wavelength . In the case that the first semiconductor chips 300 are not light emitting optoelectronic semiconductor chips , the converter elements 310 may be omitted .

[0065] The converter elements 310 may have been arranged on the upper sides 301 of the first semiconductor chips 300 in the form of platelets , for example .

[0066] In a processing step that follows the depiction of Fig . 4 , the device sections 120 will be separated by sawing along a plurality of first sawing lines 170 and second sawing lines 180 . Each first sawing line 170 extends between two neighbouring rows 111 of device sections 120 and extends through the first pad trenches 145 and through the device trenches 125 of the device sections 120 of one row 111 . Each second sawing line extends between two neighbouring rows 111 of device sections 120 and extends through the device trenches 125 of the device sections 120 of one row 111 . The first sawing lines 170 and the second sawing lines 180 are all parallel to each other and parallel to the rows 111 of the matrix pattern 110 .

[0067] Fig . 5 shows a schematic top view of an electronic device 10 obtained from one device section 120 . Fig . 6 shows a schematic sectional side view of the electronic device 10 . The electronic device 10 comprises a carrier 400 . The carrier 400 comprises the die bond pad 130 and the first wire bond pad 140 of the respective device section 120 . The die bond pad 130 and the first wire bond pad 140 are embedded into a part of the mold body 200 in such a way that the upper sides 101 and the lower sides 102 of the die bond pad 130 and the first wire bond pad 140 are at least partly not covered by the mold body 200 . The first pad trench 145 separating the die bond pad 130 and the first wire bond pad 140 is filled by the part of the mold body 200 .

[0068] The electronic device 10 comprises one of the first semiconductor chips 300 which is arranged on the upper side 101 of the die bond pad 130 . The first semiconductor chip 300 is connected to the upper side 101 of the first wire bond pad 140 by the respective first bond wire 320 .

[0069] The first semiconductor chip 300 of the electronic device 10 protrudes over a first broadside 410 of the carrier 400 and over a second broadside 420 that is parallel to and opposed to the first broadside 410 of the carrier 400 of the electronic device 10 . The broadsides 410 , 420 of the carrier 400 are entirely formed by those side faces of the die bond pad 130 that were previously oriented towards the two neighbouring device trenches 125 . The two broadsides 410 , 420 of the carrier 400 are free of the material of the mold body 200 .

[0070] When the electronic device 10 was separated, the lead frame 100 and the mold body 200 were cut on a first sawing line 170 that extended through the first pad trench 145 . In consequence , the first wire bond pad 140 of the electronic device 10 is arranged between two sections 131 of the die bond pad 130 along a first narrow side 430 of the carrier 400 that was formed by sawing along the first sawing line 170 .

[0071] A first upper part 210 of the mold body 200 is arranged on the upper side 101 of the die bond pad 130 and the upper side 101 of the first wire bond pad 140 of the electronic device 10 . The first upper part 210 adj oins the first narrow side 430 of the carrier 400 and is formed from the segment 205 of the mold body 200 that was arranged on the link section 160 of the lead frame 100 that was connected to the die bond pad 130 and the first wire bond pad 140 of the electronic device 10 .

[0072] A second upper part 220 of the mold body 200 is arranged on the upper side 101 of the die bond pad 130 and adj oins a second narrow side 440 of the carrier 400 that is opposed to the first narrow side 430 of the carrier 400 . The second upper part 220 of the mold body 200 is formed from another segment 205 of the mold body 200 than the first upper part 210 of the mold body 200 .

[0073] The first upper part 210 and the second upper part 220 of the mold body 200 may be used for handling the electronic device 10 .

[0074] In a variant of the electronic device 10 , the second upper part 220 may be omitted .

[0075] The electronic device 10 further comprises one of the further semiconductor chips 350 arranged on the die bond pad 130 and connected to the first wire bond pad 140 by one further bond wire 360 . In another variant of the electronic device 10 , the further semiconductor chip 350 and the further bond wire 360 may be omitted, however .

[0076] The lower side 102 of the die bond pad 130 and the first wire bond pad 140 of the electronic device 10 form electric contact pads of the electronic device 10 . The electronic device 10 may be designed for being mounted by surface-mount technology ( SMT ) .

[0077] Fig . 7 shows a schematic depiction of an electronic assembly 20 . The electronic assembly 20 comprises a plurality of electronic devices 10 . In the example depicted in Fig . 7 , the electronic assembly 20 comprises five electronic devices 10 . In other variants , however, the electronic assembly 20 may comprise fewer or more than five electronic devices 10 .

[0078] The electronic devices 10 are arranged in a linear arrangement next to each other such that the first broadside 410 of the carrier 400 of one electronic device 10 faces the second broadside 420 of the carrier 400 of the neighbouring electronic device 10 and the first broadside 410 of the carrier 400 of that neighbouring electronic device 10 faces the second broadside 420 of the carrier 400 of a third electronic device 10 and so on .

[0079] The first semiconductor chips 300 of the electronic devices 10 are arranged linearly next to each other . The first semiconductor chips 300 of neighbouring electronic devices 10 may be arranged very near to each other . Due to the first semiconductor chips 300 protruding over the broadsides 410 , 420 of the carriers 400 , the die bond pads 130 of neighbouring electronic devices are spaced apart further from each other than the first semiconductor chips 300 of neighbouring electronic devices 10 . This helps to prevent an electric short circuit between neighbouring electronic devices 10 .

[0080] Fig . 8 shows a schematic sectional side view of the lead frame 100 during an optional processing step that happens after the processing status shown in Fig . 4 and before separating the device sections 120 by sawing along the sawing lines 170 , 180 . The lead frame 100 has been cut along all the first sawing lines 170 to form hal f cuts 190 , thereby separating the first wire bond pad 140 of each device section 120 from the rest of the lead frame 100 without fully cutting through the mold body 200 . Consequently, the lead frame 100 is still held together by the mold body 200 in the processing status depicted in Fig . 8 .

[0081] The processing status depicted in Fig . 8 allows to test the individual electronic devices 10 by electrically contacting the die bond pads 130 and the first wire bond pads 140 of the electronic devices 10 . This may be carried out using pogo pins that contact the die bond pads 130 and the first wire bond pads 140 at their lower sides 102 , for example . Testing may include a color control of light emitted by the individual electronic devices 10 and an adj usted of the color by spray coating of additional converter material .

[0082] Fig . 9 shows a schematic top view of another variant of the electronic device 10 . Fig . 10 shows a schematic sectional side view of this variant of the electronic device 10 . This variant of the electronic device 10 di f fers from the previously described variants of the electronic device 10 in that the first wire bond pad 140 comprises a solder control structure 195 arranged on the lower side 102 and adj oining the first narrow side 430 of the carrier 400 . The die bond pad 130 comprises a solder control structure 195 arranged on the lower side 102 and adj oining the second narrow side 440 of the carrier 400 of the electronic device 10 . The solder control structures 195 may have been formed at the lower side 102 of the lead frame 100 as hal f etches during the production of the lead frame 100 . The solder control structures 195 can be used to check that the electric contact pads of the electronic device 10 formed at the lower sides 102 of the first wire bond pad 140 and the die bond pad 130 are properly wetted by solder material while mounting the electronic device 10 , for example . The solder control structures 195 may also help to automatically align the electronic device 10 while mounting by means of capillary forces .

[0083] Fig . 11 shows a schematic top view of another variant of the electronic device 10 . Fig . 12 shows a schematic side view of this variant of the electronic device 10 . This variant of the electronic device 10 di f fers from the variant of the electronic device 10 shown in Figs . 5 and 6 in that the die bond pad 130 comprises a plurality of solder control structures 196 arranged on the first broadside 410 and the second broadside 420 of the carrier 400 . The solder control structures 196 may have been formed as full etches during the production of the lead frame 100 . The solder control structures 196 may serve as fiducial marks for a local alignment of the electronic device 10 . The solder control structures 196 may also allow checking a proper wetting of the electric contact pads of the electronic device 10 .

[0084] Fig . 13 shows a schematic top view of a part of an alternative variant of the lead frame 100 that can be used for producing a further alternative variant of the electronic device 10 . The following description focuses on the di f ferences between the variants of the lead frame 100 depicted in Figs . 1 and 13 and the di f ferences between the resulting variants of the electronic device 10 . Otherwise , the preceding description also applies to this variant of the lead frame 100 .

[0085] In the depiction of Fig . 13 , the die bond pads 130 of the device sections 120 are only connected to the link section 160 on one side of the respective device section 120 but not to the link section 160 on the other side of the respective device section 120 . Each link section 160 connects the die bond pads 130 and the first wire bond pads 140 of one row 111 of device sections 120 .

[0086] This variant of the lead frame 100 comprises further link sections 165 that are oriented parallel to the columns 112 of the matrix pattern 110 and connect the link sections 160 . In the example depicted in Fig . 13 , one further link section 165 is inserted after every two columns 112 of the matrix pattern 110 . In other variants , however, a further link section 165 can be inserted after every column 112 or after every three or more columns 112 .

[0087] Fig . 14 shows a schematic depiction of the lead frame 100 in a processing status that follows the depiction of Fig . 13 .

[0088] One first semiconductor chip 300 has been arranged on the upper side 101 of the die bond pad 130 of each device section 120 in the same way as described in conj unction with Fig . 3 . Additionally, a further semiconductor chip 350 has been arranged on the die bond pad 130 of each device section 120 . Again, the further semiconductor chip 350 may be omitted . A converter element 310 has been arranged on the upper side 301 of each first semiconductor chip 300 . The first semiconductor chip 300 of each device section 120 has been connected to the upper side 101 of the respective first wire bond pad 140 by one first bond wire 320 each, as described above in conj unction with Fig . 4 . Accordingly, each further semiconductor chip 340 has been connected to the first wire bond pad 140 of the respective device section 120 by one further bond wire 360 each .

[0089] In a following processing step, the device sections 120 will be separated by sawing . In this variant of the lead frame 100 , sawing only occurs along first sawing lines 170 which extend between two neighbouring rows 111 of the device sections 120 and which extends through the first pad trenches 145 and the device trenches 125 of the device sections 120 of one row 111 .

[0090] Fig . 15 shows a schematic sectional side view of one resulting electronic device 10 . This variant of the electronic device 10 di f fers from the variant depicted in Fig . 6 in that the first semiconductor chip 300 not only protrudes over the first broadside 410 and the second broadside 420 of the carrier 400 but also over the second narrow side 440 of the carrier 400 . This allows to place the electronic device 10 in an electronic assembly 20 such that the second narrow side 440 of the carrier 400 of the electronic device 10 faces the second narrow side 440 of the carrier 400 of a further electronic device 10 which is arranged in a rotationally symmetric way with respect to the electronic device 10 . Such an electronic assembly 20 can thus comprise two rows of electronic devices 10 as shown in Fig . 7 , where the second row of electronic devices 10 is rotated by 180 ° with respect to the first row of electronic devices 10 . A further di f ference between the variants of the electronic device 10 shown in Figs . 6 and 15 is that the variant of Fig . 15 only comprise the first upper part 210 of the mold body but not the second upper part 220 of the mold body 200 .

[0091] Fig . 16 shows a schematic top view of a further variant of the lead frame 100 that can be used for producing a further variant of the electronic device 10 . The following description focuses on the di f ferences between the variants of the lead frame 100 depicted in Figs . 1 and 16 . Otherwise , the preceding description also applies to this variant of the lead frame 100 .

[0092] In the variant shown in Fig . 16 , each device section 120 of the lead frame 100 comprises a second wire bond pad 150 in addition to the die bond pad 130 and the first wire bond pad 140 . The die bond pad 130 and the second wire bond pad 150 are partly separated by a second pad trench 155 . The second pad trenches 155 and the device trenches 125 are not connected and are entirely separated by sections of the lead frame 100 having the full thickness of the lead frame 100 .

[0093] Each link section 160 of the lead frame 100 of Fig . 16 connects the die bond pads 130 and the first wire bond pads 140 of one row 111 of device sections 120 and connects the die bond pads 130 and the second wire bond pads 150 of another row 111 of the device sections 120 .

[0094] Fig . 17 shows a schematic top view of a variant of the electronic device 10 that can be obtained from the lead frame 100 shown in Fig . 16 . Fig . 18 shows a schematic sectional side view of this variant of the electronic device 10 . The following description focuses on the di f ferences between this variant of the electronic device 10 and the variant of the electronic device 10 shown in Figs . 5 and 6 . Otherwise , the preceding description also applies to this variant of the electronic device 10 . The carrier 400 of this electronic device 10 not only comprises the die bond pad 130 and the separate first wire bond pad 140 but also the second wire bond pad 150 that is separate from the die bond pad 130 and the first wire bond pad 140 . The second pad trench 155 is filled by the mold body 200 . The second wire bond pad 150 is arranged between two sections 132 of the die bond pad 130 along the second narrow side 440 of the carrier 400 .

[0095] In addition to the first semiconductor chip 300 , a second semiconductor chip 330 is arranged on the upper side 101 of the die bond pad 130 . The second semiconductor chip 330 is connected to the upper side 101 of the second wire bond pad 150 by a second bond wire 340 . The second semiconductor chip 330 protrudes over the first broadside 410 and the second broadside 420 of the carrier 400 .

[0096] In addition to the further semiconductor chip 350 , this variant of the electronic device 10 comprises a further semiconductor chip 370 arranged on the die bond pad 130 . The further semiconductor chip 370 is connected to the second wire bond pad 150 by a further bond wire 380 . However, the further semiconductor chips 350 , 370 may be omitted .

[0097] The invention has been illustrated and described in more detail with the aid of exemplary variants . The invention is not , however, restricted to the examples disclosed . Rather, other variants may be derived therefrom by the person skilled in the art . REFERENCE SYMBOLS electronic device electronic assembly lead frame upper side lower side matrix pattern row column device section device trench die bond pad section section first wire bond pad first pad trench second wire bond pad second pad trench link section further link section first sawing line second sawing line hal f cut solder control structure solder control structure mold body segment f irst upper part 220 second upper part

[0098] 300 first semiconductor chip

[0099] 301 upper side

[0100] 302 lower side

[0101] 310 converter element

[0102] 320 first bond wire

[0103] 330 second semiconductor chip

[0104] 340 second bond wire

[0105] 350 further semiconductor chip

[0106] 360 further bond wire

[0107] 370 further semiconductor chip

[0108] 380 further bond wire

[0109] 400 carrier

[0110] 410 f irst broadside

[0111] 420 second broadside

[0112] 430 first narrow side

[0113] 440 second narrow side

Claims

CLAIMS1. An electronic device (10) comprising a carrier (400) having a die bond pad (130) and a separate first wire bond pad (140) embedded into a mold body (200) , wherein upper sides (101) and lower sides (102) of the die bond pad (130) and the first wire bond pad (140) are at least partly not covered by the mold body (200) , wherein a first semiconductor chip (300) is arranged on the upper side (101) of the die bond pad (130) , wherein the first semiconductor chip (300) is connected to the upper side (101) of the first wire bond pad (140) by a first bond wire (320) , wherein the first semiconductor chip (300) protrudes over two opposite broadsides (410, 420) of the carrier (400) .

2. The electronic device (10) as claimed in claim 1, wherein the broadsides (410, 420) of the carrier (400) are entirely formed by the die bond pad (130) .

3. The electronic device (10) as claimed in one of the previous claims, wherein the first wire bond pad (140) is arranged between two sections (131) of the die bond pad (130) along a first narrow side (430) of the carrier (400) .

4. The electronic device (10) as claimed in one of the previous claims, wherein the die bond pad (130) and the first wire bond pad (140) are separated by a first pad trench (145) , wherein the first pad trench (145) is filled by the mold body (200) .

5. The electronic device (10) as claimed in claim 4, wherein the first pad trench (145) is U-shaped.

6. The electronic device (10) as claimed in one of the previous claims, wherein a first upper part (210) of the mold body (200) is arranged on the upper side (101) of the die bond pad (130) and the upper side (101) of the first wire bond pad (140) .

7. The electronic device (10) as claimed in claim 6, wherein a second upper part (220) of the mold body (200) is arranged on the upper side (101) of the die bond pad (130) .

8. The electronic device (10) as claimed in one of claims 1 to 6, wherein the first semiconductor chip (300) protrudes over a second narrow side (440) of the carrier (400) .

9. The electronic device (10) as claimed in one of claims 1 to 7 , wherein the carrier (400) comprises a second wire bond pad (150) that is separate from the die bond pad (130) and the first wire bond pad (140) , wherein a second semiconductor chip (330) is arranged on the upper side (101) of the die bond pad (130) , wherein the second semiconductor chip (330) is connected to the upper side (101) of the second wire bond pad (150) by a second bond wire (340) , wherein the second semiconductor chip (330) protrudes over the two broadsides (410, 420) of the carrier (400) .

10. The electronic device (10) as claimed in claim 9, wherein the second wire bond pad (150) is arranged between two sections (132) of the die bond pad (130) along a second narrow side (440) of the carrier (400) .

11. The electronic device (10) as claimed in one of the previous claims,wherein a further semiconductor chip (350, 370) is ar- ranged on the die bond pad (130) .

12. An electronic assembly (20) comprising a plurality of electronic devices (10) according to one of the previous claims.

13. A lead frame (100) comprising a plurality of device sections (120) arranged in rows (111) and columns (112) of a matrix pattern (110) , wherein each device section (120) comprises a die bond pad (130) and a first wire bond pad (140) , wherein the die bond pad (130) and the first wire bond pad (140) are partly separated by a first pad trench (145) , wherein the die bond pads (130) of neighbouring device sections (120) in a common row (111) are partly separated by device trenches (125) , wherein the first pad trenches (145) and the device trenches (125) are not connected, wherein the first pad trenches (145) and the device trenches (125) are entirely separated by sections of the lead frame (100) having the full thickness of the lead frame (100) .

14. The lead frame (100) as claimed in claim 13, wherein the lead frame (100) comprises a plurality of link sections (160) , wherein each link section (160) connects the die bond pads (130) and the first wire bond pads (140) of one row (111) of device sections (120) .

15. The lead frame (100) as claimed in claim 14, wherein each link section (160) connects the die bond pads (130) of two neighbouring rows (111) of device sections (120) .

16. A method for producing an electronic device (10) comprising- providing a lead frame (100) as claimed in one of claims 13 to 16;- partly embedding the lead frame (100) into a mold body (200) , wherein upper sides (101) and lower sides (102) of the die bond pads (130) and the first wire bond pads (140) are at least partly not covered by the mold body (200) ;- arranging one first semiconductor chip (300) on the upper side (101) of the die bond pad (130) of each device section (120) ;- connecting the first semiconductor chip (300) of each device section (120) to the upper side (101) of the respective first wire bond pad (140) by one first bond wire (320) ;- separating the device sections (120) by sawing to form carriers (400) of a plurality of electronic devices (10) , wherein the first semiconductor chip (300) of each electronic devices (10) protrudes over two opposite broadsides of the carrier (400) .

17. The method as claimed in claim 16, wherein separating the device sections (120) includes sawing along a plurality of first sawing lines (170) and second sawing lines (180) , wherein each first sawing line (170) extends between two neighbouring rows (111) of device sections (120) , wherein each first sawing line (170) extends through the first pad trenches (145) and the device trenches (125) of the device sections (120) of one row (111) , wherein each second sawing line (180) extends between two neighbouring rows (111) of device sections (120) , wherein each second sawing line (180) extends through the device trenches (125) of the device sections (120) of one row (111) .

18. The method as claimed in one of claims 16 and 17, wherein the lead frame (100) is developed as claimed in one of claims 15 and 16, wherein the mold body (200) comprises several separate segments (205) , wherein each segment (205) is in contact with one link section (160) .

19. The method as claimed in one of claims 16 to 18, wherein the following steps are carried out before separating the device sections (120) :- separating the first wire bond pad (140) of each device section (120) by sawing;- testing at least one electronic device (10) by electri- cally contacting the die bond pad (130) and the first wire bond pad (140) of the electronic device (10) .

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