Sensing-storage-computing-integrated neuromorphic device and fabrication method therefor

Abstract

A sensing-storage-computing-integrated neuromorphic device and a fabrication method therefor. The device comprises: a bottom electrode (16), which is disposed on a surface of a substrate (10); an oxide semiconductor layer (15) and a metal compound layer (13), which are sequentially disposed on a surface of the bottom electrode (16) and form a heterojunction, wherein the oxide semiconductor layer (15) serves as a gas sensing layer; and a top electrode (14), which is disposed on a surface of the metal compound layer (13). The sensing-storage-computing-integrated neuromorphic device can implement neuromorphic storage and computing by using the memristive effect of the device, and the device can identify and memorize gas types, realize signal determination in real time, and implement detection and response regarding gases at low concentrations; and the device has an enhanced gas information sensing effect, and is suitable for signal-embedded enhanced sensing-storage-computing-integrated processing.

Description

A neuromorphic device integrating sensing, storage and computing and a preparation method thereof TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a novel neuromorphic device integrating sensing, storage and computing and a preparation method thereof. BACKGROUND

[0002] The conventional gas sensor can only detect the gas information in the environment, and needs to be converted by an analog-to-digital converter before being transmitted to a processing unit for identification, determination and information storage. This process leads to additional power consumption and processing efficiency limitation. In order to efficiently realize the detection and identification of gas signals, the terminal detection device needs to be endowed with the function of information calculation, so as to realize the collection and identification of signals without data conversion. Therefore, developing a novel neuromorphic semiconductor device integrating sensing, storage and computing is an effective solution to realize efficient real-time gas detection and identification.

[0003] The oxide semiconductor-based gas detection device can realize long-term continuous gas monitoring and plays an important role in the field of gas sensors. However, the detection sensitivity of the oxide semiconductor gas detector is limited, and weak gas signals in the environment will be disturbed, making it difficult to complete the collection and detection of low-concentration gas signals. Although the detection problem of low-concentration gas is alleviated to some extent by means of signal amplifier, the circuit complexity and signal processing difficulty are increased, and it is difficult to realize high-sensitivity signal collection in essence.

[0004] Therefore, it is urgent to develop a novel gas sensor to improve the response limit of the device from the gas-sensitive material itself, so as to complete the high-accuracy and high-sensitivity gas signal identification.

[0005] SUMMARY

[0006] The present application aims to overcome the above-mentioned defects existing in the prior art, and provides a neuromorphic device integrating sensing, storage and computing and a preparation method thereof.

[0007] To achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0008] The present application provides a neuromorphic device integrating sensing, storage and computing, comprising:

[0009] a bottom electrode arranged on the surface of the substrate;

[0010] an oxide semiconductor layer and a metal compound layer arranged in sequence on the surface of the bottom electrode and forming a heterojunction, the oxide semiconductor layer serving as a gas sensing layer;

[0011] a top electrode arranged on the surface of the metal compound layer.

[0012] Further, the oxide semiconductor layer comprises a ternary oxide semiconductor layer, and the metal compound layer comprises a noble metal nanoparticle-modified metal organic framework compound layer.

[0013] Further, the ternary oxide semiconductor layer comprises SnWO x layer, SnZnO x layer, SnFeO x layer, or SnZrO x layer, the metal organic framework compound in the noble metal nanoparticle-modified metal organic framework compound layer comprises Ni3(HHTP)2, the noble metal comprises at least one of platinum, gold and palladium, and the diameter of the noble metal nanoparticle is 3-15 nm.

[0014] Further, the ratio of the Sn element to the W element, Zn element, Fe element or Zr element is 1.5:1-3:1.

[0015] Further, the substrate comprises a silicon oxide wafer substrate, the bottom electrode comprises a bottom end interdigital electrode, the top electrode comprises a top end interdigital electrode, the interdigital direction of the bottom end interdigital electrode is arranged orthogonally to the interdigital direction of the top end interdigital electrode, and the bottom electrode material and / or the top electrode material comprises at least one of platinum, gold, aluminum, titanium and nickel.

[0016] The application also provides a preparation method of a neuromorphic device integrating sensing and storage, comprising:

[0017] providing a substrate;

[0018] forming a bottom electrode on the surface of the substrate;

[0019] forming an oxide semiconductor layer and a metal compound layer on the surface of the bottom electrode in sequence, so that the oxide semiconductor layer and the metal compound layer form a heterojunction, and the oxide semiconductor layer serves as a gas sensing layer;

[0020] forming a top electrode on the surface of the metal compound layer.

[0021] Further, the bottom end interdigital electrode as the bottom electrode is formed on the surface of the silicon oxide substrate by electron beam lithography and electron beam evaporation process, and the top end interdigital electrode as the top electrode is formed on the surface of the metal compound layer, the interdigital direction of the bottom end interdigital electrode is arranged orthogonally to the interdigital direction of the top end interdigital electrode, and the oxide semiconductor layer is formed after the surface of the silicon oxide substrate on which the bottom end interdigital electrode is formed is bombarded by oxygen plasma treatment process; wherein the interdigital interval distance of the bottom end interdigital electrode and the top end interdigital electrode is 50-200 nm, the bottom electrode material and / or the top electrode material includes at least one of platinum, gold, aluminum, titanium, and nickel, the thickness of the bottom electrode and / or the top electrode is 50-200 nm, the power of oxygen plasma bombardment is 80-120 W, and the bombardment time is 2-10 minutes.

[0022] Further, the ternary oxide semiconductor layer as the gas sensing layer is formed on the surface of the bottom electrode by atomic layer deposition process; wherein the cavity temperature during the atomic layer deposition process is 200-300℃, the ternary oxide semiconductor layer includes SnWO x layer, SnZnO x layer, SnFeO x layer, or SnZrO x layer, and the thickness is 5-15 nm, the ratio of the Sn element to the W element, the Zn element, the Fe element, or the Zr element is 1.5:1-3:1.

[0023] Further, the formation of the metal compound layer includes:

[0024] The thin film of the noble metal nanoparticle modified metal organic framework compound is formed on the surface of the ternary oxide semiconductor layer by solution spin coating process, and annealing is performed, so as to form the noble metal nanoparticle modified metal organic framework compound layer on the surface of the ternary oxide semiconductor layer as the metal compound layer; wherein the spin coating speed during the solution spin coating process is 1000-2000 revolutions per minute, the spin coating time is 1-4 minutes, the annealing temperature is 90-120℃, the annealing time is 20-40 minutes, and the noble metal nanoparticle modified metal organic framework compound layer with a thickness of 10-50 nm is formed.

[0025] Further, the formation of the noble metal nanoparticle modified metal organic framework compound includes:

[0026] The noble metal nanoparticles are mixed with the metal organic framework compound in a water bath furnace by ultrasonic method to obtain the metal organic framework compound adsorbed with the noble metal nanoparticles, so as to form the metal organic framework compound modified by the noble metal nanoparticles; wherein the noble metal includes at least one of platinum, gold and palladium, the diameter of the noble metal nanoparticles is 3-15 nm, the metal organic framework compound includes Ni3(HHTP)2, the water bath temperature is 60-100 DEG C, the ultrasonic power is 150-300 W, and the ultrasonic time is 5-20 minutes.

[0027] From the above technical solution, it can be seen that the oxide semiconductor layer and the metal compound layer heterojunction are formed, and the oxide semiconductor layer is used as a gas sensing layer, so that the neural morphological memory and calculation are realized by using the memristive effect of the device, and the gas type recognition and memory are realized in the device itself, that is, the signal determination is realized in real time. Further, the gas sensitive properties of the oxide semiconductor are improved by introducing the metal organic framework compound, the detection response to low concentration gas is realized, and the gas-electric response range of the device is enhanced, so that the gas detection and recognition sensing storage calculation integrated neural morphological electronic device is constructed, which has the gas information sensing enhancement effect and is suitable for signal built-in enhancement type sensing storage calculation integrated processing. The present application has the following advantages:

[0028] (1) The detection, recognition and storage of gas information are completed in the same device, which avoids the conversion of analog signals and digital signals and the loss in the information transmission process, greatly simplifies the circuit design and system design, enhances the real-time processing efficiency of the system, and provides a key new sensing storage calculation integrated core device for intelligent systems with real-time response.

[0029] (2) By designing the functional layer heterojunction of the oxide semiconductor and the metal organic compound, the gas detection ability of the oxide semiconductor is enhanced by using the unique material structure and high specific surface area of the metal organic framework compound, and the sensitive detection of low concentration range gas is realized.

[0030] (3) The sensing storage calculation integrated neural morphological device with bionic olfactory function is developed, which expands from the storage and calculation integrated function of the human brain to the sensing function of the olfactory system, and realizes the transcendence of the human brain and the olfactory system, and realizes the olfactory sensing, information storage and information calculation. BRIEF DESCRIPTION OF DRAWINGS

[0031] Fig. 1 is a structural schematic diagram of a sensing storage calculation integrated neural morphological device according to an embodiment of the present application.

[0032] Figs. 2-7 are process flow schematic diagrams of a preparation method of a sensing storage calculation integrated neural morphological device according to an embodiment of the present application.

[0033] Fig. 8 is a schematic diagram of a gas detection principle of a sensing-storage-computing integrated neuromorphic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0034] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings thereof by those having ordinary skills in the art to which the present application belongs. The terms such as “comprise” and the like used herein mean that the elements or objects before the terms encompass the elements or objects listed after the terms and equivalents thereof, and do not exclude other elements or objects.

[0035] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings thereof by those having ordinary skills in the art to which the present application belongs. The terms such as “comprise” and the like used herein mean that the elements or objects before the terms encompass the elements or objects listed after the terms and equivalents thereof, and do not exclude other elements or objects.

[0036] The novel sensing-storage-computing integrated neuromorphic device constructed in the present application has the effect of enhancing gas information sensing and is suitable for signal built-in enhanced sensing-storage-computing integrated processing.

[0037] The specific embodiments of the present application will be further described in detail below with reference to the accompanying drawings.

[0038] Referring to Fig. 1, the sensing-storage-computing integrated neuromorphic device according to the present application comprises, from bottom to top, a bottom electrode 16, an oxide semiconductor layer 15, a metal compound layer 13 and a top electrode 14 arranged on a substrate 10 in sequence.

[0039] The bottom electrode 16 is arranged on the surface of the substrate 10; the oxide semiconductor layer 15 is arranged on the surface of the bottom electrode 16; the metal compound layer 13 is arranged on the surface of the oxide semiconductor layer 15, and the metal compound layer 13 and the oxide semiconductor layer 15 form a heterojunction, and the oxide semiconductor layer 15 also serves as a gas sensing layer; and the top electrode 14 is arranged on the surface of the metal compound layer 13. Therefore, the neuromorphic storage and calculation can be realized by using the memristive effect of the device, and the gas type recognition and memory can be realized in the device itself, and the signal determination can be realized in real time. Thus, a new neuromorphic device integrating sensing, storage and calculation is formed, which can complete the collection, analysis and storage of gas in the same device.

[0040] Moreover, by completing the detection, recognition and storage of gas information in the same device, the conversion of analog signals and digital signals and the loss in the information transmission process are avoided, the circuit design and system design can be greatly simplified, the real-time processing efficiency of the system is enhanced, and a new core device integrating sensing, storage and calculation is provided for the intelligent system with real-time response.

[0041] Referring to FIG. 1. In some embodiments, the oxide semiconductor layer 15 includes a ternary oxide semiconductor layer 151.

[0042] Further, the ternary oxide semiconductor layer 151 includes SnWO x layer (tin tungsten oxygen layer) 152, SnZnO x layer (tin zinc oxygen layer), SnFeO x layer (tin iron oxygen layer), or SnZrO x layer (tin zirconium oxygen layer). In other words, the material of the ternary oxide semiconductor layer 151 includes SnWO x , SnZnO x , SnFeO x , or SnZrO x .

[0043] In some embodiments, in the SnWO x layer 152, the ratio of Sn element to W element is 1.5:1-3:1, and preferably 2:1.

[0044] In the SnZnO x layer, the ratio of Sn element to Zn element is 1.5:1-3:1, and preferably 2:1.

[0045] In the SnFeO x layer, the ratio of Sn element to Fe element is 1.5:1-3:1, and preferably 2:1.

[0046] In the SnZrO x layer, the ratio of Sn element to Zr element is 1.5:1-3:1, and preferably 2:1.

[0047] In some embodiments, the metal compound layer 13 comprises a noble metal nanoparticle-modified metal organic framework compound layer 131. In other words, the material of the metal compound layer 13 comprises a thin film of noble metal nanoparticle-modified metal organic framework compound.

[0048] Further, the metal organic framework compound in the noble metal nanoparticle-modified metal organic framework compound layer 131 comprises Ni3(HHTP)2, and the noble metal comprises at least one of platinum (Pt), gold (Au) and palladium (Pd). For example, the noble metal nanoparticle-modified metal organic framework compound comprises Pt-Ni3(HHTP)2, Au-Ni3(HHTP)2or Pd-Ni3(HHTP)2, and further forms a platinum nanoparticle-modified metal organic framework compound layer (Pt-Ni3(HHTP)2layer), a gold nanoparticle-modified metal organic framework compound layer (Au-Ni3(HHTP)2layer) or a palladium nanoparticle-modified metal organic framework compound layer (Pd-Ni3(HHTP)2layer).

[0049] In some embodiments, the diameter of the noble metal nanoparticle is 3-15 nm. For example, the diameter of the platinum nanoparticle, the gold nanoparticle or the palladium nanoparticle is preferably 10 nm.

[0050] Referring to FIG. 1. In some embodiments, the substrate 10 comprises a silicon oxide wafer substrate, i.e. a substrate 10 formed by a silicon wafer 11 with an oxide layer (silicon dioxide layer) 12, but is not limited thereto. The bottom electrode 16 is disposed on the surface of the oxide layer 12 on the silicon wafer 11.

[0051] In some embodiments, the oxide semiconductor layer 15 and the metal compound layer 13 are sequentially disposed on the surface of the bottom electrode 16 and extend to cover the surface of the oxide layer 12 on the silicon wafer 11.

[0052] The top electrode 14 is disposed on part of the surface of the metal compound layer 13, i.e. the area of the top electrode 14 is smaller than the area of the metal compound layer 13, in other words, the surface of the metal compound layer 13 is also exposed outside the coverage area of the top electrode 14.

[0053] In some embodiments, the bottom electrode 16 comprises a bottom interdigital electrode 161, and the top electrode 14 comprises a top interdigital electrode 141.

[0054] In some embodiments, the interdigital direction of the bottom interdigital electrode 161 is orthogonally arranged with the interdigital direction of the top interdigital electrode 141.

[0055] In some embodiments, the top interdigital electrode 141 and the bottom interdigital electrode 161 are arranged in a top-bottom corresponding manner.

[0056] In some embodiments, the bottom electrode 16 material includes at least one of platinum, gold, aluminum, titanium, and nickel.

[0057] The top electrode 14 material includes at least one of platinum, gold, aluminum, titanium, and nickel.

[0058] In some embodiments, the thickness of the silicon oxide wafer substrate 10 is 150-250 nm.

[0059] The thickness of the bottom electrode 16 (bottom end interdigital electrode 161) is 50-200 nm.

[0060] The spacing distance of the interdigital electrodes of the bottom end interdigital electrode 161 is 50-200 nm.

[0061] The thickness of the oxide semiconductor layer 15 (ternary oxide semiconductor layer 151) is 5-15 nm.

[0062] The thickness of the metal compound layer 13 (platinum nanoparticle-modified metal organic framework compound layer 131) is 10-50 nm.

[0063] The thickness of the top electrode 14 (top end interdigital electrode 141) is 50-200 nm.

[0064] The spacing distance of the interdigital electrodes of the top end interdigital electrode 141 is 50-200 nm.

[0065] In some embodiments, the bottom end interdigital electrode 161 is connected to the bottom end electrode seat through a bottom end connecting arm, and the bottom end interdigital electrode 161, the bottom end connecting arm, and the bottom end electrode seat are simultaneously arranged on the surface of the oxide layer 12 on the silicon wafer 11. The top end interdigital electrode 141 is connected to the top end electrode seat through a top end connecting arm, and the top end interdigital electrode 141, the top end connecting arm, and the top end electrode seat are simultaneously arranged on the surface of the metal compound layer 13.

[0066] In one example, in a neuromorphic device integrating sensing and computing according to the present application, the thickness of the silicon oxide wafer substrate 10 is 200 nm, the thickness of the Pt bottom end interdigital electrode 161 is 100 nm, the spacing distance of the interdigital electrodes of the Pt bottom end interdigital electrode 161 is 100 nm, the thickness of the SnWO x layer 152 is 10 nm, the thickness of the SnWO x layer 152 is 10 nm, the thickness of the SnWO

[0067] Therefore, the application enhances the gas detection capability of the oxide semiconductor by designing a functional layer heterojunction of the oxide semiconductor and the metal organic compound, and using the unique material structure and high specific surface area of the metal organic framework compound, so that the sensitive detection of low concentration range gas can be realized.

[0068] By developing the sensing and storage integrated neuromorphic device with the biomimetic olfactory function, the sensing function of the olfactory system is expanded from the storage and calculation integrated function of the human brain to the sensing function of the olfactory system, so that the human brain and the olfactory system are surpassed, and the olfactory sensing, information storage and information calculation are realized.

[0069] The preparation method of the sensing and storage integrated neuromorphic device of the application will be further described in detail below through specific embodiments and in combination with the drawings.

[0070] The preparation method of the sensing and storage integrated neuromorphic device of the application comprises:

[0071] A substrate is provided;

[0072] A bottom electrode is formed on the surface of the substrate;

[0073] An oxide semiconductor layer and a metal compound layer are sequentially formed on the surface of the bottom electrode, so that the oxide semiconductor layer and the metal compound layer form a heterojunction, and the oxide semiconductor layer serves as a gas sensing layer;

[0074] A top electrode is formed on the surface of the metal compound layer.

[0075] Referring to FIGS. 2-7, in some embodiments, the preparation method of the sensing and storage integrated neuromorphic device of the application comprises the following steps:

[0076] Step S1: preparing a bottom electrode 16 on the surface of a substrate 10.

[0077] As shown in FIG. 2, a silicon oxide wafer 11 is used as the substrate 10, that is, a silicon wafer 11 with a SiO2 oxide layer 12 on the surface is used as the substrate 10.

[0078] The thickness of the silicon oxide wafer substrate 10 is 150-250 nm. In this embodiment, the thickness of the silicon oxide wafer substrate 10 is 200 nm.

[0079] First, an electron beam lithography process is used to form a lithography pattern of the bottom interdigital electrode on the surface of the SiO2 oxide layer 12 on the silicon wafer 11.

[0080] Then, a bottom interdigital electrode 161 is formed on the surface of the SiO2 oxide layer 12 of the substrate 10 by using an electron beam evaporation process and a photolithography pattern of the bottom interdigital electrode, as a bottom electrode 16 (including the bottom interdigital electrode 161, a bottom end connecting arm and a bottom end electrode seat), as shown in FIG. 3.

[0081] In some embodiments, the bottom interdigital electrode 161 is designed to have a spacing distance of 50-200 nm by using electron beam lithography, and the bottom interdigital electrode 161 is grown on the surface of the SiO2 oxide layer 12 of the substrate 10 by using an electron beam evaporation process to have a thickness of 50-200 nm, as the bottom electrode 16.

[0082] In some embodiments, the material of the bottom interdigital electrode 161 (the bottom electrode 16) includes at least one of Pt, Au, Al, Ti and Ni.

[0083] In this embodiment, the Pt bottom interdigital electrode 161 is designed and formed to have a spacing distance of 100 nm by using electron beam lithography, and the Pt bottom interdigital electrode 161 is grown on the surface of the SiO2 oxide layer 12 of the substrate 10 by using an electron beam evaporation process to have a thickness of 100 nm.

[0084] Step S2: The surface of the bottom electrode 16 is treated.

[0085] After the bottom interdigital electrode 161 is formed, the surface of the oxide layer 12 of the substrate 10 on which the bottom interdigital electrode 161 is formed is bombarded by using an oxygen plasma treatment process, so as to improve the interface quality of the bottom electrode 16.

[0086] In some embodiments, the power of the oxygen plasma bombardment is 80-120 W, and the bombardment time is 2-10 minutes when the oxygen plasma treatment process is performed.

[0087] In this embodiment, the power of the oxygen plasma bombardment is 100 W, and the bombardment time is 3 minutes when the oxygen plasma treatment process is performed.

[0088] Step S3: A ternary oxide semiconductor layer 151 is prepared on the surface of the bottom electrode 16.

[0089] As shown in FIG. 4, the ternary oxide semiconductor layer 151 (the oxide semiconductor layer 15) is formed on the surface of the bottom interdigital electrode 161 by using an atomic layer deposition process, and serves as a gas sensing layer.

[0090] In some embodiments, the cavity temperature is 200-300°C when the atomic layer deposition process is performed.

[0091] The ternary oxide semiconductor layer 151 includes SnWO x The layer 152 includes SnZnO xSnFeO x SnZrO x Sn:W=1.5:1~3:1。

[0092] The thickness of the ternary oxide semiconductor layer 151 is 5-15 nm.

[0093] In this embodiment, the cavity temperature during the atomic layer deposition process is 200°C; the SnWO x layer 152 is prepared as a gas sensing layer; the SnWO x In the SnWO

[0094] Step S4: preparing a noble metal nanoparticle modified metal organic framework compound.

[0095] As shown in FIG. 5, a certain size of noble metal nanoparticle 17 is mixed and modified with a metal organic framework compound 18 in a water bath furnace using ultrasonic method to obtain a metal organic framework compound 18 adsorbed with noble metal nanoparticles 17, thereby forming a noble metal nanoparticle modified metal organic framework compound 19.

[0096] In some embodiments, the noble metal nanoparticle 17 includes at least one of platinum (Pt) nanoparticles, gold (Au) nanoparticles, and palladium (Pd) nanoparticles; the diameter of the noble metal nanoparticle 17 is 3-15 nm. The metal organic framework compound 18 includes Ni3(HHTP)2.

[0097] When mixed and modified in the water bath furnace using ultrasonic method, the water bath temperature is 60-100°C, the ultrasonic power is 150-300 W, and the ultrasonic duration is 5-20 minutes. The metal organic framework compounds Pt-Ni3(HHTP)2, Au-Ni3(HHTP)2, or Pd-Ni3(HHTP)2 adsorbed with corresponding noble metal nanoparticles can be prepared.

[0098] In this embodiment, platinum nanoparticles are used as doping elements, platinum nanoparticles with a diameter of 10 nm are mixed and modified with a metal organic framework compound Ni3(HHTP)2 in a water bath furnace at 80°C using ultrasonic method to obtain a metal organic framework compound Pt-Ni3(HHTP)2 adsorbed with platinum nanoparticles, thereby forming a platinum nanoparticle modified metal organic framework compound.

[0099] Step S5: preparing a noble metal nanoparticle modified metal organic framework compound layer 131 on the surface of the ternary oxide semiconductor layer 151.

[0100] As shown in FIG. 6, a thin film of noble metal nanoparticle-modified metal organic framework compound 19 is prepared on the surface of the ternary oxide semiconductor layer 151 by a solution spin coating process, and annealing is performed, thereby forming a noble metal nanoparticle-modified metal organic framework compound layer 131 on the surface of the ternary oxide semiconductor layer 151 as the metal compound layer 13.

[0101] In some embodiments, the spin coating speed during the solution spin coating process is 1000-2000 rpm, the spin coating time is 1-4 minutes, the annealing temperature is 90-120°C, the annealing time is 20-40 minutes, and the noble metal nanoparticle-modified metal organic framework compound layer 131 with a thickness of 10-50 nm is formed.

[0102] In this embodiment, a thin film of platinum nanoparticle-modified metal organic framework compound Pt-Ni3(HHTP)2 is prepared on the SnWO x layer 152 by a solution spin coating process, the spin coating speed is 1500 rpm, and the spin coating time is 3 minutes. Subsequently, the annealing temperature is set to 100°C on a hot plate, and the annealing time is 30 minutes, thereby forming a functional thin film of platinum nanoparticle-modified metal organic framework compound, i.e., Pt-Ni3(HHTP)2, with a film thickness of 30 nm.

[0103] Step S6: preparing a top electrode 14 on the surface of the noble metal nanoparticle-modified metal organic framework compound layer 131.

[0104] An electron beam lithography process is used to form a lithography pattern of the top interdigital electrode on the surface of the platinum nanoparticle-modified metal organic framework compound layer Pt-Ni3(HHTP)2.

[0105] Then, an electron beam evaporation process is used, and the lithography pattern of the top interdigital electrode is used to form a top interdigital electrode 141 on the surface of the platinum nanoparticle-modified metal organic framework compound layer Pt-Ni3(HHTP)2 as the top electrode 14, as shown in FIG. 7.

[0106] In some embodiments, the top interdigital electrode 141 with a spacing distance of 50-200 nm is designed by electron beam lithography, and an electron beam evaporation method is used to grow the top interdigital electrode 141 with a thickness of 50-200 nm on the surface of the platinum nanoparticle-modified metal organic framework compound layer Pt-Ni3(HHTP)2 as the top electrode 14 (including the top interdigital electrode 141, a top connecting arm, and a top electrode seat).

[0107] In some embodiments, the material of the top interdigital electrode 141 (top electrode 14) includes at least one of Pt, Au, Al, Ti, and Ni.

[0108] In this embodiment, Pt top interdigital electrodes 141 with a spacing distance of 100 nm are designed and formed by electron beam lithography, and a Pt top interdigital electrode 141 with a thickness of 30 nm is grown on the surface of the platinum nanoparticle modified metal organic framework compound layer Pt-Ni3(HHTP)2 by electron beam evaporation.

[0109] In some embodiments, when the Pt top interdigital electrode 141 is formed, the interdigital direction of the Pt top interdigital electrode 141 is arranged in an orthogonal direction to the interdigital direction of the Pt bottom interdigital electrode 161.

[0110] Therefore, by the above-mentioned preparation method of the sensing and computing integrated neuromorphic device of the application, a sensing and computing integrated neuromorphic device of the application as shown in FIG. 1 can be prepared. In other words, the sensing and computing integrated neuromorphic device of the application shown in FIG. 1 can be prepared by the above-mentioned preparation method of the sensing and computing integrated neuromorphic device of the application as shown in FIGS. 2-7.

[0111] Referring to FIG. 8, when a gas such as NO, NH3, CO2, NO2, etc. is introduced into the above-mentioned sensing and computing integrated neuromorphic device of the application, the SnWO x The ternary oxide semiconductor layer 151 realizes the response enhancement of the gas, thereby realizing the sensitive detection of a low-concentration gas such as NO2. At the same time, the neuromorphic storage and computing are realized by the memristive effect of the device, thereby realizing the identification and memory of the gas type in the device itself and realizing the signal determination in real time.

[0112] In summary, by forming the heterojunction of the oxide semiconductor layer 15 and the metal compound layer 13 and taking the oxide semiconductor layer 15 as the gas sensing layer, the neuromorphic storage and computing are realized by the memristive effect of the device, the identification and memory of the gas type are realized in the device itself, and the signal determination is realized in real time. Further, by introducing the metal organic framework compound, the gas sensing property of the oxide semiconductor is improved, the detection response of the low-concentration gas is realized, the gas-electric response range of the device is enhanced, thereby constructing the gas detection and identification sensing and computing integrated neuromorphic electronic device, which has the gas information sensing enhancement effect and is suitable for the signal built-in enhancement type sensing and computing integrated processing.

[0113] While the embodiments of the application have been illustrated and described in detail, it will be readily apparent to those skilled in the art that various modifications and changes can be made to the embodiments without departing from the scope and spirit of the application, as described in the claims. Moreover, the application described is not limited in its application to the details set forth in the description or illustrated in the drawings. The application is capable of other embodiments and of being practiced or carried out in various ways.

Claims

1. An integrated neuromorphic device for cognitive storage, characterized in that, The application relates to a gas sensor, comprising: a bottom electrode arranged on the surface of a substrate; an oxide semiconductor layer and a metal compound layer arranged on the surface of the bottom electrode in sequence and forming a heterojunction, the oxide semiconductor layer serving as a gas sensing layer; a top electrode arranged on the surface of the metal compound layer.

2. The neuromorphic device integrated with the asensor according to claim 1, wherein The oxide semiconductor layer comprises a ternary oxide semiconductor layer, and the metal compound layer comprises a noble metal nanoparticle modified metal organic framework compound layer.

3. The neuromorphic device integrated with the asicon according to claim 2, wherein, The ternary oxide semiconductor layer includes SnWO x layer, SnZnO x layer, SnFeO x layer, or SnZrO x layer, the metal organic framework compound in the noble metal nanoparticle-modified metal organic framework compound layer includes Ni3(HHTP)2, the noble metal includes at least one of platinum, gold, and palladium, and the diameter of the noble metal nanoparticle is 3 to 15 nm.

4. The neuromorphic device integrated with senor computing of claim 3, wherein, The ratio of the Sn element to the W element, the Zn element, the Fe element or the Zr element is 1.5:1-3:

1.

5. The neuromorphic device integrated with senor computing of claim 1, wherein, The substrate comprises a silicon oxide wafer substrate, the bottom electrode comprises a bottom end interdigital electrode, the top electrode comprises a top end interdigital electrode, the interdigital direction of the bottom end interdigital electrode is arranged orthogonally to the interdigital direction of the top end interdigital electrode, and the bottom electrode material and / or the top electrode material comprises at least one of platinum, gold, aluminum, titanium and nickel.

6. A method for fabricating a neuromorphic device integrated with a stigmergy, comprising: The application further relates to a preparation method of the gas sensor, comprising: providing a substrate; forming a bottom electrode on the surface of the substrate; forming an oxide semiconductor layer and a metal compound layer on the surface of the bottom electrode in sequence, so that the oxide semiconductor layer and the metal compound layer form a heterojunction, and the oxide semiconductor layer serves as a gas sensing layer; forming a top electrode on the surface of the metal compound layer.

7. The method of claim 6, wherein the method further comprises: The bottom end interdigital electrode serving as the bottom electrode and the top end interdigital electrode serving as the top electrode are formed on the surface of a silicon oxide wafer substrate by adopting an electron beam lithography and electron beam evaporation process, the interdigital direction of the bottom end interdigital electrode is arranged orthogonally to the interdigital direction of the top end interdigital electrode, and the oxide semiconductor layer is formed after the surface of the silicon oxide wafer substrate on which the bottom end interdigital electrode is formed is subjected to bombardment treatment by adopting an oxygen plasma treatment process; wherein the interdigital interval distance of the bottom end interdigital electrode and the top end interdigital electrode is 50-200 nm, the bottom electrode material and / or the top electrode material comprises at least one of platinum, gold, aluminum, titanium and nickel, the thickness of the bottom electrode and / or the top electrode is 50-200 nm, the power of oxygen plasma bombardment is 80-120 W, and the bombardment duration is 2-10 minutes.

8. The method of claim 6, wherein the method further comprises: A ternary oxide semiconductor layer is formed on the surface of the bottom electrode as a gas sensing layer by an atomic layer deposition process; wherein the cavity temperature during the atomic layer deposition process is 200-300 DEG C, the ternary oxide semiconductor layer comprises SnWO x layer, SnZnO x layer, SnFeO x layer or SnZrO x layer, with a thickness of 5-15 nm, and the ratio of Sn element to W element, Zn element, Fe element or Zr element is 1.5:1-3:

1.

9. The method of claim 8, wherein the method further comprises: The formation of the metal compound layer comprises: a noble metal nanoparticle modified metal organic framework compound film is formed on the surface of the ternary oxide semiconductor layer by adopting a solution spin coating process, and annealing is performed, so that a noble metal nanoparticle modified metal organic framework compound layer is formed on the surface of the ternary oxide semiconductor layer as the metal compound layer; wherein the spin coating rotation speed during the solution spin coating process is 1000-2000 revolutions per minute, the spin coating duration is 1-4 minutes, the annealing temperature is 90-120 DEG C, the annealing duration is 20-40 minutes, and the noble metal nanoparticle modified metal organic framework compound layer with a thickness of 10-50 nm is formed.

10. The method of claim 9, wherein the method further comprises: The formation of the noble metal nanoparticle modified metal organic framework compound comprises: The noble metal nanoparticles are mixed and modified with the metal organic framework compound in a water bath furnace by ultrasonic method to obtain the metal organic framework compound adsorbed with the noble metal nanoparticles, so as to form the noble metal nanoparticle modified metal organic framework compound The noble metal includes at least one of platinum, gold and palladium, the diameter of the noble metal nanoparticles is 3-15 nm, the metal organic framework compound includes Ni3(HHTP)2, the water bath temperature is 60-100 DEG C, the ultrasonic power is 150-300 W, and the ultrasonic time is 5-20 minutes.

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