Laser parameter measurement circuit and method, and laser

Abstract

The present application relates to a laser parameter measurement circuit and method, and a laser. The laser parameter measurement circuit comprises a first measurement module and a micro-control unit. The first measurement module comprises: a first photoelectric sensor, which is used for generating a leakage current when being irradiated by a laser pulse; a first analog signal processing circuit, which is connected to the first photoelectric sensor, and is configured to convert the leakage current into a corresponding first voltage signal; and a first pulse generation circuit, which is connected to the first analog signal processing circuit, and is configured to convert the first voltage signal into a corresponding first square-wave pulse signal. The micro-control unit is connected to the first analog signal processing circuit and the first pulse generation circuit, and is configured to enable the first analog signal processing circuit, and calculate laser parameters of the laser pulse on the basis of the first voltage signal and the first square-wave pulse signal. Using the circuit can improve the real-time performance of laser measurement, thus improving the light-emitting stability of lasers.

Description

Laser parameter detection circuit, method, and laser Technical Field

[0001] This application relates to the field of laser technology, and in particular to a laser parameter detection circuit, method, and laser. Background Technology

[0002] With the development of laser technology, lasers have emerged, such as laser therapy machines. Their output parameters, such as energy and power, are related to the treatment effect. Therefore, whether the output parameters are accurate has become a problem worthy of attention in this field.

[0003] However, traditional techniques use the integral average of laser pulses per unit time to detect laser power, and this method is applied to the laser's power adjustment unit. This traditional method of detecting output parameters suffers from poor real-time performance and cannot analyze each laser pulse individually. This often leads to problems such as poor laser output stability and low treatment efficiency due to untimely detection. Summary of the Invention

[0004] Based on this, it is necessary to provide a laser parameter detection circuit, method, laser method, device, computer equipment, and storage medium that can improve the timeliness of laser parameter detection and thus improve the output stability of lasers, in order to address the above-mentioned technical problems.

[0005] In a first aspect, a laser parameter detection circuit is provided, comprising a first detection module and a microcontroller unit: wherein the first detection module includes:

[0006] The first photoelectric sensor is used to generate leakage current when irradiated by a laser pulse;

[0007] The first analog signal processing circuit is connected to the first photoelectric sensor and is used to convert the leakage current into a corresponding first voltage signal.

[0008] The first pulse generation circuit is connected to the first analog signal processing circuit and is used to convert the first voltage signal into a corresponding first square wave pulse signal.

[0009] The microcontroller unit is connected to the first analog signal processing circuit and the first pulse generation circuit, and is used to enable the first analog signal processing circuit and calculate the laser parameters of the laser pulse based on the first voltage signal and the first square wave pulse signal.

[0010] In some embodiments, the laser parameter detection circuit further includes a second detection module, the second detection module comprising:

[0011] The second photoelectric sensor is used to generate leakage current when irradiated by a laser.

[0012] The second analog signal processing circuit, connected to the second photoelectric sensor, is used to convert the leakage current into a corresponding second voltage signal.

[0013] The second pulse generation circuit is connected to the second analog signal processing circuit and is used to convert the second voltage signal into a corresponding second square wave pulse signal.

[0014] The microcontroller unit is also connected to the second analog signal processing circuit and the second pulse generation circuit, and is also used to calculate the laser parameters of the laser pulse based on the first voltage signal, the first square wave pulse signal, the second voltage signal and the second square wave pulse signal.

[0015] In some embodiments, the laser parameter detection circuit further includes:

[0016] The first power supply circuit is connected to the main controller, the microcontroller unit and the first analog signal processing circuit, and is used to convert the specified voltage into the first working voltage when the main controller provides the specified voltage. The first working voltage is the working voltage of the microcontroller unit and the first detection module.

[0017] Bus circuitry is used to establish communication between the main controller and the microcontroller unit.

[0018] The second power supply circuit, connected to the main controller and the bus circuit, is used to convert the specified voltage into a second operating voltage when the main controller provides a specified voltage. The second operating voltage is the operating voltage of the bus circuit.

[0019] In some embodiments, the first power supply circuit includes a first power supply module and a second power supply module; wherein...

[0020] The first power supply module is used to convert the specified voltage into the operating voltage of the first detection module when the main controller provides the specified voltage;

[0021] The second power supply module is used to convert the operating voltage of the first detection module into the operating voltage of the microcontroller unit.

[0022] In some embodiments, the first analog signal processing circuit includes a first resistor, an analog switch, a non-inverting amplifier unit, and a voltage follower unit; wherein...

[0023] The first end of the first resistor is connected to the positive terminal of the first photoelectric sensor and the COM terminal of the analog switch, and the second end of the first resistor is grounded.

[0024] The EN terminal of the analog switch is connected to the first input / output terminal of the microcontroller unit, and the NO terminal of the analog switch is connected to the non-inverting input terminal of the non-inverting proportional amplifier unit.

[0025] The output of the non-inverting amplifier unit is connected to the first pulse generation circuit and the non-inverting input of the voltage follower unit, while the inverting input of the non-inverting amplifier unit is grounded.

[0026] The output of the voltage follower unit is connected to the inverting input of the voltage follower unit and the analog-to-digital converter of the microcontroller unit.

[0027] In some embodiments, the first pulse generation circuit includes a second resistor, a third resistor, and an operational amplifier; wherein,

[0028] The first end of the second resistor is connected to the inverting input of the operational amplifier and the first end of the third resistor. The second end of the second resistor is configured to be connected to the corresponding operating voltage.

[0029] The non-inverting input of the operational amplifier is connected to the output of the non-inverting proportional amplifier unit, and the output of the operational amplifier is connected to the second input / output terminal of the microcontroller unit.

[0030] The second terminal of the third resistor is grounded.

[0031] In a second aspect, a laser parameter detection method is provided, wherein the method is applied to a microcontroller unit of a laser parameter detection circuit according to any embodiment of the first aspect, the method comprising:

[0032] Receive the laser start command from the main controller;

[0033] According to the start command, the first analog signal processing circuit in the first detection module is enabled, so that the first analog signal processing circuit converts the leakage current generated by the first photoelectric sensor under the laser pulse into a corresponding first voltage signal. The first voltage signal includes a first converted voltage signal and a first calculated voltage signal, and the first converted voltage signal is converted into a first square wave pulse signal through the first pulse generation circuit.

[0034] The first square wave pulse signal and the first calculated voltage signal output by the first detection module are acquired, and the laser parameters of the laser pulse are calculated based on the first square wave pulse signal and / or the first calculated voltage signal.

[0035] In some embodiments, acquiring a first square wave pulse signal and a first calculated voltage signal output by a first detection module, and calculating the laser parameters of the laser pulse based on the first square wave pulse signal and / or the first calculated voltage signal, includes:

[0036] A first square wave pulse signal is acquired. The voltage value of the first calculated voltage signal is acquired in response to the rising edge of the first square wave pulse signal. The acquisition of the voltage value of the first calculated voltage signal is terminated in response to the falling edge of the first square wave pulse signal. The duration of the first square wave pulse signal is calculated based on the time of the rising and falling edges. The laser energy of the laser pulse is calculated based on the duration and the acquired voltage value of the first calculated voltage signal.

[0037] In some embodiments, acquiring a first square wave pulse signal and a first calculated voltage signal output by a first detection module, and calculating the laser parameters of the laser pulse based on the first square wave pulse signal and / or the first calculated voltage signal, includes:

[0038] The output frequency of the laser is calculated based on the rise time of the first square wave pulse signal corresponding to the laser pulse and the rise time of the first square wave pulse signal corresponding to the next laser pulse.

[0039] In some embodiments, acquiring a first square wave pulse signal and a first calculated voltage signal output by a first detection module, and calculating the laser parameters of the laser pulse based on the first square wave pulse signal and / or the first calculated voltage signal, includes:

[0040] A first square wave pulse signal is acquired. The voltage value of a first calculated voltage signal is acquired in response to the rising edge of the first square wave pulse signal. The acquisition of the voltage value of the first calculated voltage signal is terminated in response to the falling edge of the first square wave pulse signal. The duration of the first square wave pulse signal is calculated based on the rising and falling edge times. The laser energy of the laser pulse is calculated based on the duration and the acquired voltage value of the first calculated voltage signal. The output frequency of the laser is calculated based on the rising edge time of the first square wave pulse signal corresponding to the laser pulse and the rising edge time of the first square wave pulse signal corresponding to the next laser pulse. The total power of the laser is calculated based on the laser energy and output frequency of multiple laser pulses within a preset time period.

[0041] In some embodiments, the method further includes:

[0042] Enable the second detection module and obtain the laser parameters calculated based on the second detection module;

[0043] The laser parameters calculated based on the first detection module and the laser parameters calculated based on the second detection module are weighted by a preset weight ratio to obtain the weighted laser parameters of the laser pulse.

[0044] In some embodiments, the method further includes:

[0045] When the first detection module malfunctions, stop enabling the first detection module and switch to enabling the second detection module.

[0046] In some embodiments, the method further includes:

[0047] In response to the parameter provision command issued by the main controller, the calculated target laser parameters corresponding to the parameter provision command are sent to the main controller.

[0048] Thirdly, a laser is provided, including a main controller and a laser parameter detection circuit according to any embodiment of the first aspect.

[0049] The aforementioned laser parameter detection circuit, method, and laser accurately acquire the energy of a single laser pulse through a photoelectric sensor and convert it into leakage current, which is then transmitted to an analog signal processing circuit. The analog signal processing circuit converts the leakage current of the single laser pulse into a corresponding voltage signal, which characterizes the energy state information of the laser pulse and transmits it to a pulse generation circuit. The pulse generation circuit converts the voltage signal into a corresponding square wave pulse signal, which characterizes the duration information of the laser pulse. The microcontroller unit receives both the voltage signal and the square wave pulse signal, and combines the energy state information represented by the voltage signal and the duration information represented by the square wave pulse signal to calculate the relevant laser parameters for a single laser pulse irradiating the photoelectric sensor in a timely and accurate manner. Furthermore, by continuously or intermittently acquiring data, parameters such as the total power of the laser can be obtained from the relevant laser parameters of multiple laser pulses. This improves the real-time performance of laser detection and, consequently, the output stability of the laser. Attached Figure Description

[0050] Figure 1 is a schematic diagram of the laser parameter detection circuit in some embodiments;

[0051] Figure 2 is a schematic diagram of the laser parameter detection circuit in some other embodiments;

[0052] Figure 3 is a schematic diagram of the structure of the first power supply circuit in some embodiments;

[0053] Figure 4 is a schematic diagram of the second power supply circuit in some embodiments;

[0054] Figure 5 is a schematic diagram of the microcontroller structure in some embodiments;

[0055] Figure 6 is a schematic diagram of the structure of the first analog signal processing circuit in some embodiments;

[0056] Figure 7 is a schematic diagram of the structure of the second analog signal processing circuit in some embodiments;

[0057] Figure 8 is a schematic diagram of the structure of the first pulse generation circuit in some embodiments;

[0058] Figure 9 is a schematic diagram of the second pulse generation circuit in some embodiments;

[0059] Figure 10 is a flowchart illustrating the laser parameter detection method in some embodiments. Detailed Implementation

[0060] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0061] In some embodiments, as shown in FIG1, a laser parameter detection circuit 10 is provided. This laser parameter detection circuit 10 can be applied to laser devices such as lasers. Specifically,

[0062] The laser parameter detection circuit 10 may include a first detection module 110 and a microcontroller unit 200, wherein the first detection module 110 includes:

[0063] The first photoelectric sensor 111 is used to generate leakage current when irradiated by a laser pulse;

[0064] The first analog signal processing circuit 112 is connected to the first photoelectric sensor 111 and is used to convert the leakage current into a corresponding first voltage signal.

[0065] The first pulse generation circuit 113 is connected to the first analog signal processing circuit 112 and is used to convert the first voltage signal into a corresponding first square wave pulse signal.

[0066] The microcontroller unit 200 is connected to the first analog signal processing circuit 112 and the first pulse generation circuit 113, and is used to enable the first analog signal processing circuit 112 and calculate the laser parameters of the laser pulse based on the first voltage signal and the first square wave pulse signal.

[0067] In this embodiment, the microcontroller unit 200 (MCU), also known as a single-chip microcomputer or microcontroller, enables the first analog signal processing circuit 112 after receiving a corresponding command. When the first photoelectric sensor 111 is irradiated by a laser pulse, a leakage current Is corresponding to the intensity of the laser pulse is generated inside it. The first analog signal processing circuit 112 processes the leakage current Is inside the first photoelectric sensor 111, transmitting the generated first voltage signal to the first pulse generation circuit 113 and also to the microcontroller unit 200. The first pulse generation circuit 113 processes the first voltage signal output from the first analog signal processing circuit 112 to generate a first square wave pulse signal corresponding to the first voltage signal and transmits it to the microcontroller unit 200. The microcontroller unit 200 combines the first voltage signal and the first square wave pulse signal to calculate the laser parameters of the laser.

[0068] For example, laser parameters include, but are not limited to, the energy of a single laser pulse, the pulse width of a single laser pulse, the time interval between the current laser pulse and its next laser pulse, the emission frequency of the laser pulse, and the total power of the laser.

[0069] The aforementioned laser parameter detection circuit accurately acquires the energy of a single laser pulse through a photoelectric sensor and converts it into leakage current, which is then transmitted to an analog signal processing circuit. The analog signal processing circuit converts the leakage current of a single laser pulse into a corresponding voltage signal, which characterizes the energy state information of the laser pulse. This voltage signal is then transmitted to a pulse generation circuit, which converts the voltage signal into a corresponding square wave pulse signal. This square wave pulse signal characterizes the duration information of the laser pulse. The microcontroller unit receives both the voltage signal and the square wave pulse signal, and by combining the energy state information represented by the voltage signal and the duration information represented by the square wave pulse signal, it can calculate the relevant laser parameters for a single laser pulse illuminating the photoelectric sensor in a timely and accurate manner. Furthermore, by continuously or intermittently acquiring data, it can also obtain parameters such as the total power of the laser from the relevant laser parameters of multiple laser pulses. This improves the real-time performance of laser detection and, consequently, the output stability of the laser.

[0070] In some embodiments, referring to FIG2, the laser parameter detection circuit may further include a second detection module 120, the second detection module 120 including:

[0071] The second photoelectric sensor 121 is used to generate leakage current when irradiated by a laser.

[0072] The second analog signal processing circuit 122 is connected to the second photoelectric sensor 121 and is used to convert the leakage current into a corresponding second voltage signal.

[0073] The second pulse generation circuit 123 is connected to the second analog signal processing circuit 122 and is used to convert the second voltage signal into a corresponding second square wave pulse signal.

[0074] The microcontroller unit 200 is also connected to the second analog signal processing circuit 122 and the second pulse generation circuit 123, and is also used to calculate laser parameters based on the first voltage signal, the first square wave pulse signal, the second voltage signal and the second square wave pulse signal.

[0075] In this embodiment, after receiving a corresponding command, the microcontroller unit 200 enables the second analog signal processing circuit 122. When the second photoelectric sensor 121 is irradiated by a laser pulse, a leakage current corresponding to the intensity of the laser pulse is generated inside it. The second analog signal processing circuit 122 processes the leakage current inside the second photoelectric sensor 121, transmitting the generated second voltage signal to the second pulse generation circuit 123 on one hand, and also transmitting the generated second voltage signal to the microcontroller unit 200 on the other hand. The second pulse generation circuit 130 processes the second voltage signal output from the second analog signal processing circuit 122 to generate a second square wave pulse signal corresponding to the second voltage signal and transmits it to the microcontroller unit 200. The microcontroller unit 200 combines the second voltage signal and the second square wave pulse signal. Furthermore, the microcontroller unit 200 can also integrate the calculation results obtained by the first detection module 110 and the calculation results obtained by the signal from the second detection module 120, for example, by weighted calculation to obtain the final weighted laser parameters.

[0076] For example, the microcontroller unit 200 can simultaneously enable the first detection module 110 and the second detection module 120, and perform weighted calculation on the detection results of the first detection module 110 and the second detection module 120. The weight allocation of each detection module can be adjusted according to actual needs. For example, the first detection module 110 can be used as the master detection module and the second detection module 120 can be used as the slave detection module. The weight of the master detection module can be greater than that of the slave detection module, so as to obtain more accurate detection results.

[0077] For example, the microcontroller unit 200 can also individually enable one of the modules as needed under different instructions or conditions. For instance, if a hardware malfunction is detected in the first detection module 110, the microcontroller unit 200 can deactivate the first detection module 100 and switch to enabling the second detection module 120, and vice versa. Therefore, it can avoid the problem of unstable laser parameter detection caused by special hardware malfunctions, ensure the effectiveness of the laser parameter detection circuit, and prevent the laser from stopping operation due to circuit failure.

[0078] It is worth noting that in some embodiments, there may be multiple detection modules in this application, and the specific number is not limited. It can be adjusted according to the actual application. In order to more clearly illustrate this application, this embodiment only uses two detection modules, including the first detection module 110 and the second detection module 120, as examples for illustration, but the number of detection modules is not limited to two. In other embodiments, a third detection module, a fourth detection module, and more detection modules may also be included. In the case of including multiple detection modules, the number of microcontroller units 200 can also be adjusted accordingly based on the number of detection modules. Any number and corresponding relationship that can realize the inventive concept of this application is included within the protection scope of this application.

[0079] In some embodiments, referring to FIG2, the laser parameter detection circuit 10 may further include the following components:

[0080] The first power supply circuit 300 is connected to the main controller 20, the microcontroller unit 200, and the first analog signal processing circuit 112. When the main controller 20 provides a specified voltage, it converts the specified voltage into a first operating voltage (VCC_ANA, VCC_MCU). The first voltage is the operating voltage of the microcontroller unit 200 and the first detection module 110. That is, the microcontroller unit 200, the first analog signal processing circuit 112, the first pulse generation circuit 113, and the first photoelectric sensor 111 provide the operating voltage. Furthermore, when the second detection module 120 or more detection modules are included, the first power supply circuit 300 can also provide operating voltages for the various components of other detection modules.

[0081] Bus circuit 400 is used to establish communication between main controller 20 and microcontroller unit 200;

[0082] The second power supply circuit 500 is connected to the main controller 20 and the bus circuit 400. When the main controller 20 provides a specified voltage, it converts the specified voltage into a second operating voltage VCC_BUS, which is the operating voltage of the bus circuit 400.

[0083] In this embodiment, the first power supply circuit 300 provides a stable operating voltage for the microcontroller 200 and at least one detection module. The bus circuit 400 establishes communication between the microcontroller 200 and at least one host computer (e.g., the main controller of a laser quality device), allowing for the transmission of different laser parameters according to different host computer instructions to adapt to the different operating requirements of each host computer. The second power supply circuit 500 provides a stable operating voltage for the bus circuit 400.

[0084] In some embodiments, reference can be made to FIG3, which shows a schematic diagram of the structure of a first power supply circuit 300 in some embodiments. The first power supply circuit 300 may include a first power module 301 and a second power module 302.

[0085] The first power supply module 301 is used to convert the specified voltage VCC into the working voltage VCC_ANA of the first detection module 110 when the main controller 20 provides the specified voltage VCC.

[0086] The second power supply module 302 is used to convert the operating voltage VCC_ANA of the first detection module 110 into the operating voltage VCC_MCU of the microcontroller unit 200.

[0087] More specifically, when the main controller 20 provides a set of power supply voltages VCC that meet the requirements, the first power supply circuit 300 can generate the operating voltage VCC_ANA required by the first analog signal processing circuit 112, the second analog signal processing circuit 122, the first pulse generation circuit 113, the second pulse generation circuit 123, the first photoelectric sensor 111 (e.g., PH1 in FIG. 6), and the second photoelectric sensor 121 (e.g., PH2 in FIG. 7) through the power supply component U1. VCC_ANA can then be used to generate the operating voltage VCC_MCU required by the microcontroller unit 200 through the power supply component U2.

[0088] In Figure 3, capacitors C10 and C3 are polarized capacitors, while capacitors C19, C16 and C17 are non-polarized capacitors. These capacitors can be used to store charge and improve the stability of the power supply in the first power supply circuit. In practical applications, the number of capacitors can be fewer or more than those shown in Figure 3.

[0089] In some embodiments, referring to FIG4, FIG4 shows a schematic diagram of the structure of the second power supply circuit 500 in some embodiments. The BUS_TX and BUS_RX pins are used to connect to corresponding pins of the bus circuit 400.

[0090] In some embodiments, reference can be made to Figures 5 and 6. Figure 5 shows a schematic diagram of the structure of the microcontroller unit 200 in some embodiments, and Figure 6 shows a schematic diagram of the structure of the first analog signal processing circuit 112 in some embodiments.

[0091] Referring to Figure 5, the microcontroller unit 200 can be implemented based on the MCU chip U5, which may include the following pins: input / output pins (IO1, IO2, IO3 and IO4), analog-to-digital conversion pins (ADC1, ADC2), VCC, VSS, BUS_TX and BUS_RX pins.

[0092] For example, IO1 can be used as the enable control pin of chip U18 in the first analog signal processing circuit 112; IO3 can be used as the enable control pin of chip U19 in the second analog signal processing circuit 122; IO2 can be used as the level signal input pin of the first pulse generation circuit 113; IO4 can be used as the level signal input pin of the second pulse generation circuit 123; ADC1 can be used as the voltage signal input pin of the first analog signal processing circuit 112; ADC2 can be used as the voltage signal input pin of the second analog signal processing circuit 122; and BUS_TX and BUS_RX can be used as the bus input and output pins of the bus circuit 400.

[0093] Referring to Figure 6, the first analog signal processing circuit 112 may include a first resistor R60, an analog switch U18, a non-inverting amplifier unit 1121, and a voltage follower unit 1122; wherein,

[0094] The first end of the first resistor R60 is connected to the positive terminal PH1+ of the first photoelectric sensor PH1 and the COM terminal of the analog switch U18, and the second end of the first resistor R60 is grounded; wherein, the first photoelectric sensor PH1 can be a photodiode;

[0095] The EN terminal of analog switch U18 is connected to the first input / output terminal IO1 of microcontroller unit 200, and the NO terminal of analog switch U18 is connected to the non-inverting input terminal U15+ of non-inverting proportional amplifier unit 1121.

[0096] The output terminal of the non-inverting amplifier unit 1121 is connected to the non-inverting input terminal U22+ of the first pulse generation circuit 112 and the voltage follower unit 1122, and the inverting input terminal U15- of the non-inverting amplifier unit 1121 is grounded.

[0097] The output terminal of the voltage follower unit 1122 is connected to the inverting input terminal U22- of the voltage follower unit 1122 and the analog-to-digital converter terminal ADC1 of the microcontroller unit 200.

[0098] For example, the voltage follower unit 1122 can be implemented based on the operational amplifier U22.

[0099] For example, the non-inverting amplifier unit 1121 may include an operational amplifier U15, a resistor R64 and a resistor R65. By adjusting the ratio of the resistors R64 and R65, the non-inverting amplifier unit 1121 is constructed.

[0100] For example, the first analog signal processing circuit 112 may also include a capacitor element C45, one end of which is connected to the negative terminal of the first photoelectric sensor PH1, and the other end is grounded, for storing energy after leakage current Is is generated.

[0101] Specifically, in the first analog signal processing circuit 112, after the IO1 enable signal is generated, the COM terminal and NO terminal pins inside the analog switch U18 are turned on. When the first photoelectric sensor PH1 is irradiated by a laser pulse, a leakage current Is is generated inside it. The leakage current Is changes according to the degree of excitation of the first photoelectric sensor PH1. Due to the presence of the first resistor R60, a voltage is generated at the COM terminal pin of the analog switch U18, and a voltage is generated at the NO terminal pin of the analog switch U18. This voltage is then generated by the non-inverting proportional amplifier unit 1121 based on the operational amplifier U15 to generate a voltage signal V. PD1_OP The output is sent to the non-inverting input U24A+ of the operational amplifier U24A in the first pulse generation circuit 113, and then through the voltage follower unit 1122 based on the operational amplifier U22, a voltage signal V is generated. ADC1 The output is sent to the ADC1 pin of chip U5 in the microcontroller unit 200, thereby converting the leakage current Is into the corresponding first voltage signal (V). PD1_OP V ADC1 Due to the presence of the voltage follower unit 1122, the voltage signal V at its input terminal... PD1_OP With the voltage signal V at the output terminal ADC1 The values ​​are equal or differ within a preset range.

[0102] In some embodiments, the laser parameter detection circuit 10 may further include a second detection module 120, the structure of which is shown in FIG7.

[0103] Specifically, in the second analog signal processing circuit 122, after the IO3 enable signal is generated, the COM and NO pins inside the analog switch U17 are turned on. When the second photoelectric sensor PH2 is irradiated by a laser pulse, a leakage current Is is generated inside it. The leakage current Is changes according to the degree of excitation of the photoelectric sensor PH2. Due to the presence of resistor R62, a voltage is generated at the COM pin of the analog switch U17, and a voltage is generated at the NO pin of the analog switch U17. This voltage is then generated by the non-inverting proportional amplifier unit 1221 based on operational amplifier U16 to generate a voltage signal V. PD2_OP The output is sent to the non-inverting input U24B+ of the operational amplifier U24B in the second pulse generation circuit 123, and then through the voltage follower unit 1222 based on the operational amplifier U23, a voltage signal V is generated. ADC2 The output is sent to the ADC2 pin of chip U5 in the microcontroller unit 200. That is, it converts the leakage current Is into a corresponding second voltage signal (V). PD1_OP V ADC1 ).

[0104] In some embodiments, referring to FIG8, FIG8 shows a schematic diagram of the structure of the first pulse generation circuit 113 in some embodiments. The first pulse generation circuit 113 includes a second resistor R73, a third resistor R74, and an operational amplifier U24A. The first terminal of the second resistor R73 is connected to the inverting input terminal U24A- of the operational amplifier U24A and the first terminal of the third resistor R74. The second terminal of the second resistor R73 is configured to be connected to the corresponding operating voltage VCC_ANA. The non-inverting input terminal U24A+ of the operational amplifier U24A is connected to the output terminal of the operational amplifier U15 of the non-inverting proportional amplifier unit 1121. The output terminal of the operational amplifier U24A is connected to the second input / output terminal IO2 of the microcontroller unit 200. The second terminal of the third resistor R74 is grounded.

[0105] Specifically, the first pulse generation circuit 113 can be a comparator built based on the operational amplifier U24A. When the non-inverting input terminal U24A+ input voltage signal V... PD1_OP The voltage value is greater than the reference voltage V generated by the operating voltage VCC_ANA, resistor R73, and resistor R74 at the inverting input terminal U24A. ref At that time, the output of operational amplifier U24A outputs the first square wave pulse signal V to the MCU chip U5 of microcontroller unit 200. IO2 A high level is 1, and vice versa, a low level is 0, thus converting the first voltage signal V, which belongs to the analog signal, into a high level. PD1_OP It is converted into a first square wave pulse signal consisting of 1s and 0s.

[0106] In some embodiments, referring to FIG9, FIG9 shows a schematic diagram of the structure of the second pulse generation circuit 123 in some embodiments.

[0107] Specifically, the second pulse generation circuit 123 can be a comparator circuit based on the operational amplifier U24B. When the non-inverting input terminal U24B of the operational amplifier U24B is + the input voltage signal V, PD2_OP The voltage value is greater than the reference voltage signal V generated at the inverting input terminal by the operating voltage VCC_ANA, the first resistor R73, and the second resistor R74. ref At that time, the output of operational amplifier U24B outputs the second square wave pulse signal V to the MCU chip U5 of microcontroller unit 200. IO4 A high level is 1, and a low level is 0, thus converting the second voltage signal V, which belongs to the analog signal, into a high level. PD2_OP It is converted into a second square wave pulse signal consisting of 1s and 0s.

[0108] In some embodiments, referring to FIG10, a laser parameter detection method is also provided, which can be applied to the microcontroller unit 200 of the laser parameter detection circuit 10 in any one or more of the above embodiments. The method may include the following steps:

[0109] S1: Receives the laser start command from the main controller.

[0110] Specifically, the microcontroller unit 200 can communicate with the main controller 20 via the bus circuit 400 and receive the laser start command sent by the main controller 20. In other embodiments, the microcontroller unit 200 can also establish communication with the main controller 20 via a network and receive commands issued by it.

[0111] S2: Enable the first analog signal processing circuit in the first detection module according to the start instruction, so that the first analog signal processing circuit converts the leakage current generated by the first photoelectric sensor under the laser pulse into a corresponding first voltage signal. The first voltage signal includes a first conversion voltage signal and a first calculation voltage signal, and converts the first conversion voltage signal into a first square wave pulse signal through the first pulse generation circuit.

[0112] S3: Obtain the first square wave pulse signal and the first calculated voltage signal output by the first detection module, and calculate the laser parameters of the laser pulse based on the first square wave pulse signal and / or the first calculated voltage signal.

[0113] In some embodiments, acquiring a first square wave pulse signal and a first calculated voltage signal output by a first detection module, and calculating the laser parameters of the laser pulse based on the first square wave pulse signal and / or the first calculated voltage signal, may include calculating at least one of the following laser parameters:

[0114] 1. Energy calculation of a single laser pulse: Acquire a first square wave pulse signal, trigger the acquisition of the voltage value of the first calculated voltage signal in response to the rising edge of the first square wave pulse signal, terminate the acquisition of the voltage value of the first calculated voltage signal in response to the falling edge of the first square wave pulse signal, calculate the duration of the first square wave pulse signal based on the time of the rising and falling edges, and calculate the laser energy of the laser pulse based on the duration and the acquired voltage value of the first calculated voltage signal.

[0115] Specifically, based on the ADC detection characteristics of the MCU chip, triggering timing or ending timing by using a generated square wave pulse signal with level switching can be faster and more convenient, thereby improving the calculation accuracy of laser pulse parameters. Timing is triggered by the rising edge of the square wave pulse signal, thus activating the MCU chip's ADC detection function. The MCU chip then continuously processes the calculated voltage signal V, which is an analog voltage signal. ADC1 V ADC2 The data is collected, and the ADC detection is terminated by triggering the falling edge of the square wave pulse signal. In this embodiment, since the square wave pulse signal is only generated when the laser pulse has energy, and the MCU chip performs ADC detection and laser energy calculation at this time, triggering the timing or termination of timing by using the generated square wave pulse signal in a level-flipping manner can save a lot of computing resources.

[0116] 2. Calculation of laser output frequency: The laser output frequency is calculated based on the rise time of the first square wave pulse signal corresponding to the laser pulse and the rise time of the first square wave pulse signal corresponding to the next laser pulse.

[0117] 3. Calculation of total laser power within a preset time period: Calculate the total power of the laser based on the laser energy and output frequency of multiple laser pulses within the preset time period.

[0118] The following, with reference to Figures 2 to 9, provides a more detailed description of the calculation method for the energy of a single laser pulse in some application examples of this application.

[0119] After the MCU chip U5 of the microcontroller unit 200 generates enable signals through IO1 and IO3, the first analog signal processing circuit 112 and the second analog signal processing circuit 122 are enabled. Taking a single laser pulse as an example, when the laser pulse arrives, the first photoelectric sensor PH1 and the second photoelectric sensor PH2 generate their respective leakage current Is. Referring to the explanation of the hardware structure in the above embodiment, the first analog signal processing circuit 112 generates a first voltage signal (V). PD1_OP V ADC1That is, the first voltage signal may include the first converted voltage signal V. PD1_OP and the first calculated voltage signal V ADC1 The second analog signal processing circuit 122 generates a second voltage signal (V). PD2_OP V ADC2 That is, the second voltage signal includes the second converted voltage signal V. PD2_OP Second calculation of voltage signal V ADC2 In the first pulse generation circuit 113, when V PD1_OP Greater than V ref At that time, the first square wave pulse signal V IO2 The voltage is toggled to a high level (1). In the second pulse generation circuit 123, when V... PD2_OP Greater than V ref At that time, the second square wave pulse signal V IO4 When the signal flips to a high level (1), the MCU chip U5 assumes that the laser is generating laser light, and its internal timer starts counting. The ADC1 and ADC2 pins of the MCU chip U5 then begin acquiring and calculating the voltage signal V. ADC1 and V ADC2 When the laser pulse ends, V PD1_OP Less than V ref The first square wave pulse signal V IO2 The toggle switches to a low level (0), and V... PD2_OP Less than V ref The second square wave pulse signal V IO4 When the signal flips to low level 0, the MCU chip U5 stops timing and ceases calculating the voltage signal V. ADC1 and V ADC2 The MCU chip U5 reads and records the end time of the detection, thereby calculating the duration T of the single laser pulse on the first photoelectric sensor PH1. wid1 The duration T on the second photoelectric sensor PH2 wid2 At this time, the first calculated voltage signal V is acquired. ADC1 The voltage value and the first duration T wid1 This allows us to obtain the energy generated by a single laser pulse on the first photoelectric sensor PH1; similarly, by acquiring the second calculated voltage signal V... ADC2 The voltage value and the second duration T wid2 It is possible to obtain the energy generated by a single laser pulse on the second photoelectric sensor PH2, and further, the above calculation results can be stored in the MCU chip U5.

[0120] In some embodiments, the method further includes: enabling the second detection module and obtaining laser parameters calculated based on the second detection module; and weighting the laser parameters calculated based on the first detection module and the laser parameters calculated based on the second detection module by a preset weight ratio to obtain weighted laser parameters of the laser pulse.

[0121] In this embodiment, by configuring multiple detection modules, the first detection module can be used as the main detection module and the second detection module can be used as the auxiliary detection module. By using a weighted approach, the detection accuracy of a single laser pulse can be improved, thereby improving the accuracy of laser parameter calculation.

[0122] In some embodiments, the method further includes: when the first detection module malfunctions, stopping the enabling operation of the first detection module and switching to enabling the second detection module.

[0123] In this embodiment, by configuring multiple detection modules, when one or more of the enabled detection modules malfunction, the system can switch to enabling a backup detection module, thereby ensuring the normal operation of the laser parameter detection circuit and further improving the stability of the laser.

[0124] In some embodiments, the method further includes: in response to a parameter provision instruction issued by the main controller, sending the calculated target laser parameters corresponding to the parameter provision instruction to the main controller.

[0125] In this embodiment, various host computers (main controllers) can be adapted via a bus or other means to transmit the laser characteristic parameters required by the host computer in any manner.

[0126] In some embodiments, a laser is also provided, which may be a laser therapy device for laser therapy. The laser may include a main control and a laser parameter detection circuit of any one or more of the above embodiments. The laser may further include a general structure found in general lasers. For a detailed description of the laser parameter detection circuit in the laser, please refer to the description of the above embodiments, which will not be repeated here.

[0127] It should be understood that although the steps in the flowchart of Figure 10 are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some of the steps in Figure 10 may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the sub-steps or stages of other steps.

[0128] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0129] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the characters in this article generally indicate that the preceding and following related objects have an "or" relationship.

[0130] Furthermore, the terms "first" and "second" in this article are used for descriptive convenience to distinguish components with the same name and are not intended as special limitations.

[0131] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A laser parameter detection circuit, the laser parameter detection circuit comprising a first detection module and a micro control unit: wherein, The first detection module comprises: A first photoelectric sensor for generating a leakage current when irradiated by a laser pulse; A first analog signal processing circuit connected to the first photoelectric sensor for converting the leakage current into a corresponding first voltage signal; A first pulse generation circuit connected to the first analog signal processing circuit for converting the first voltage signal into a corresponding first square wave pulse signal; The micro control unit is connected to the first analog signal processing circuit and the first pulse generation circuit, and is configured to enable the first analog signal processing circuit and calculate the laser parameter of the laser pulse according to the first voltage signal and the first square wave pulse signal.

2. The circuit of claim 1, wherein, The laser parameter detection circuit further comprises a second detection module, and the second detection module comprises: A second photoelectric sensor for generating a leakage current when irradiated by a laser; A second analog signal processing circuit connected to the second photoelectric sensor for converting the leakage current into a corresponding second voltage signal; A second pulse generation circuit connected to the second analog signal processing circuit for converting the second voltage signal into a corresponding second square wave pulse signal; The micro control unit is further connected to the second analog signal processing circuit and the second pulse generation circuit, and is further configured to calculate the laser parameter of the laser pulse according to the first voltage signal, the first square wave pulse signal, the second voltage signal and the second square wave pulse signal.

3. The circuit of claim 1, wherein, The laser parameter detection circuit further comprises: A first power supply circuit connected to the main controller, the micro control unit and the first analog signal processing circuit, configured to convert a specified voltage provided by the main controller into a first working voltage when the main controller provides the specified voltage, the first working voltage being a working voltage of the micro control unit and the first detection module; A bus circuit for establishing communication between the main controller and the micro control unit; A second power supply circuit connected to the main controller and the bus circuit, configured to convert the specified voltage provided by the main controller into a second working voltage when the main controller provides the specified voltage, the second working voltage being a working voltage of the bus circuit.

4. The circuit of claim 3, wherein, The first power supply circuit comprises a first power supply module and a second power supply module; wherein, The first power supply module is configured to convert the specified voltage provided by the main controller into a working voltage of the first detection module; The second power supply module is configured to convert the working voltage of the first detection module into a working voltage of the micro control unit.

5. The circuit of claim 1, wherein, The first analog signal processing circuit comprises a first resistor, an analog switch, a same-phase proportional amplification unit and a voltage follower unit; wherein, A first end of the first resistor is connected to a positive electrode of the first photoelectric sensor and a COM terminal of the analog switch, and a second end of the first resistor is grounded; An EN terminal of the analog switch is connected to a first input / output terminal of the micro control unit, and a NO terminal of the analog switch is connected to a same-phase input terminal of the same-phase proportional amplification unit; An IN terminal of the same-phase proportional amplification unit is connected to a same-phase output terminal of the voltage follower unit, and an OUT terminal of the voltage follower unit is connected to a second input / output terminal of the micro control unit. An output end of the in-phase proportional amplification unit is connected to an in-phase input end of the voltage follower unit and the first pulse generation circuit, and an inverting input end of the in-phase proportional amplification unit is grounded; An output end of the voltage follower unit is connected to an inverting input end of the voltage follower unit and an analog-digital conversion end of the micro control unit.

6. The circuit of claim 5, wherein, The first pulse generation circuit comprises a second resistor, a third resistor and an operational amplifier; wherein, A first end of the second resistor is connected to an inverting input end of the operational amplifier and a first end of the third resistor, and a second end of the second resistor is configured to be connected to a corresponding working voltage; An in-phase input end of the operational amplifier is connected to an output end of the in-phase proportional amplification unit, and an output end of the operational amplifier is connected to a second input-output end of the micro control unit; A second end of the third resistor is grounded.

7. A laser parameter detection method, applied to a micro control unit of a laser parameter detection circuit according to any one of claims 1 to 6, the method comprising: receiving a working start instruction of a laser emitted by a host controller; enabling a first analog signal processing circuit in a first detection module according to the working start instruction, so that the first analog signal processing circuit converts a first leakage current generated by a first photoelectric sensor under irradiation of a laser pulse into a corresponding first voltage signal, the first voltage signal comprising a first conversion voltage signal and a first calculation voltage signal, and converts the first conversion voltage signal into a first square wave pulse signal through a first pulse generation circuit; acquiring the first square wave pulse signal and the first calculation voltage signal output by the first detection module, and calculating a laser parameter of the laser pulse according to the first square wave pulse signal and / or the first calculation voltage signal.

8. The method of claim 7, wherein, The acquiring the first square wave pulse signal and the first calculation voltage signal output by the first detection module, and calculating a laser parameter of the laser pulse according to the first square wave pulse signal and / or the first calculation voltage signal, comprises: acquiring the first square wave pulse signal, triggering acquisition of a voltage value of the first calculation voltage signal in response to a rising edge of the first square wave pulse signal, terminating acquisition of the voltage value of the first calculation voltage signal in response to a falling edge of the first square wave pulse signal, calculating a duration of the first square wave pulse signal according to times of the rising edge and the falling edge, and calculating a laser energy of the laser pulse according to the duration and the acquired voltage value of the first calculation voltage signal; and / or calculating an output frequency of the laser according to a time of a rising edge of the first square wave pulse signal corresponding to the laser pulse and a time of a rising edge of the first square wave pulse signal corresponding to a next laser pulse of the laser pulse; and / or calculating a total power of the laser according to the laser energy and the output frequency of a plurality of the laser pulses within a preset time period.

9. The method of claim 8, wherein, The method further comprises: enabling a second detection module and acquiring a laser parameter calculated based on the second detection module; The laser parameters calculated based on the first detection module and the laser parameters calculated based on the second detection module are weighted and calculated with a preset weight ratio to obtain a weighted laser parameter of the laser pulse.

10. The method of claim 7, wherein, The method further comprises: When the first detection module is abnormal, stopping the enabling operation of the first detection module and switching to enable the second detection module.

11. The method of claim 7, wherein, The method further comprises: In response to the parameter providing instruction issued by the main controller, sending the calculated target laser parameter corresponding to the parameter providing instruction to the main controller.

12. A laser, characterized by The laser parameter detection circuit comprises a main controller and a laser parameter detection circuit according to any one of claims 1 to 6.

Images