Defect detection method and method for manufacturing multilayer ceramic electronic component including same

Abstract

Provided is a defect detection method for detecting a defect of a surface (10s) of a transparent film (10) used for manufacturing a multilayer ceramic electronic component. This defect detection method comprises: a step for extracting a defect candidate on the basis of a first image obtained by imaging, at a low magnification, a transparent film (10) from the surface (10s) side by using reflected light that is from coaxial epi-illumination and that is perpendicular to the surface (10s) of the transparent film (10); and a step for detecting the defect from the defect candidate on the basis of a second image obtained by imaging the defect candidate at a high magnification.

Description

Defect detection method and manufacturing method of multilayer ceramic electronic component equipped with the same

[0001] The present invention relates to a defect detection method and a method for manufacturing a multilayer ceramic electronic component including the same.

[0002] Japanese Patent Laid-Open Publication No. 2023-53294 (Patent Document 1) is a prior art document disclosing a light-transmitting laminate. The light-transmitting laminate described in Patent Document 1 has a first main surface and a second main surface. The light-transmitting laminate includes at least one reflective protective film temporarily and releasably attached to the first main surface. The reflective protective film has a function of reflecting irradiated light when an optical system with a predetermined magnification is focused on the surface of the first main surface, and transmitting inspection light.

[0003] JP 2023-53294 A

[0004] When transparent film is inspected for foreign bodies using transmission inspection, defects that exist inside the film and defects that exist on the surface are detected as a mixture of dark spots, making it impossible to detect defects that exist only on the surface of the transparent film.

[0005] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a defect detection method and a method for manufacturing a multilayer ceramic electronic component that can detect only defects that exist on the surface of a transparent film.

[0006] A defect detection method according to the present invention is a method for detecting defects on the surface of a transparent film used in the manufacture of multilayer ceramic electronic components. The defect detection method includes the steps of: extracting defect candidates based on a first image of the transparent film captured from the surface side at low magnification using reflected light from coaxial epi-illumination perpendicular to the surface of the transparent film; and detecting the defects from the defect candidates based on a second image of the defect candidates captured at high magnification.

[0007] According to the present invention, it is possible to detect only defects present on the surface of a transparent film.

[0008] FIG. 1 is a flow diagram showing a method for manufacturing a multilayer ceramic electronic component according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing a state in which a transparent film is imaged at low magnification from the surface side in a defect detection method according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing a state in which a first image is imaged with the surface of the transparent film overfocused. FIG. 4 is a schematic diagram showing a state in which light reflected from a surface defect is imaged as a dark spot without passing through the objective lens of a first detector. FIG. 5 is a graph for explaining a method for extracting defect candidates. FIG. 6 is a schematic diagram showing a state in which a defect candidate is imaged at high magnification in a defect detection method according to an embodiment of the present invention. FIG. 7 is a schematic diagram showing a state in which light reflected from a surface defect is imaged after passing through the objective lens of a second detector.

[0009] A defect detection method and a manufacturing method for a multilayer ceramic electronic component according to an embodiment of the present invention will be described below with reference to the drawings. In the following description of the embodiment, the same or corresponding parts in the drawings are given the same reference numerals, and their description will not be repeated.

[0010] In the following description of a method for manufacturing a multilayer ceramic electronic component, a method for manufacturing a multilayer ceramic capacitor will be described. However, the multilayer ceramic electronic component is not limited to a multilayer ceramic capacitor and may be a multilayer ceramic coil or the like, as long as it is a multilayer ceramic electronic component manufactured using a ceramic dielectric sheet formed on a transparent film.

[0011] 1 is a flow diagram showing a method for manufacturing a multilayer ceramic electronic component according to one embodiment of the present invention. As shown in FIG. 1, when manufacturing a multilayer ceramic capacitor, first, a ceramic dielectric slurry is prepared (step S1). Specifically, ceramic dielectric powder, additive powder, binder resin, and a dissolving solution are dispersed and mixed to prepare the ceramic dielectric slurry. The ceramic dielectric powder is, for example, BaTiO ３ , CaTiO ３ , SrTiO ３ , CaZrO ３ or CaHfO ３The additive powder is, for example, composed of at least one of a Si compound, an Mg compound, an Mn compound, an Fe compound, a Cr compound, an Ni compound, and a Co compound. The binder resin may be a polyurethane resin, a urea resin, a melamine resin, an epoxy resin, a vinyl acetate resin, an acrylic resin, or an aqueous polymer such as polyvinyl alcohol (PVA) or polyvinyl butyral (PVB). These may be used alone or in a mixture of two or more. The ceramic dielectric slurry may be either solvent-based or water-based. When the ceramic dielectric slurry is used as a water-based paint, the ceramic dielectric slurry is prepared by mixing a water-soluble binder and dispersant with a dielectric raw material dissolved in water.

[0012] Next, the transparent film that will become the carrier film is inspected for surface defects (step S2). During the inspection, defects on the surface of the transparent film are detected. The inspection is not limited to being performed on the entire surface of the transparent film, but may be performed only on the positions on the surface of the transparent film where the dielectric slurry is to be applied. The defect detection method will be described later. Note that step S2 may be performed before step S1, or step S2 may be performed simultaneously with step S1.

[0013] Next, a ceramic dielectric slurry is applied to the surface of the transparent film where no defects are detected and dried to form a ceramic dielectric sheet on the transparent film (step S3). Specifically, the ceramic dielectric slurry is formed into a sheet on the carrier film using a die coater, gravure coater, microgravure coater, or the like, and then dried to form the ceramic dielectric sheet. The thickness of the ceramic dielectric sheet is, for example, 0.2 μm or more and 10 μm or less, from the viewpoint of miniaturization and high capacitance of the multilayer ceramic capacitor.

[0014] Before the ceramic dielectric sheet and the internal electrode pattern are laminated, the transparent film is peeled off from the ceramic dielectric sheet. The transparent film includes a release layer, and the ceramic dielectric sheet is formed on the surface of the transparent film on the side where the release layer is located, so that the transparent film can be easily peeled off from the ceramic dielectric sheet.

[0015] Next, a mother sheet is formed (step S4). Specifically, a conductive paste is applied to some of the ceramic dielectric sheets to form a mother sheet on which an internal electrode pattern is formed.

[0016] The conductive paste contains Ni powder, a solvent, a dispersant, a binder, and the like, and is prepared to have a constant viscosity. Examples of binders include polyvinyl butyral (PVB) and polyvinyl alcohol (PVA). The conductive paste can be applied by screen printing, inkjet printing, gravure printing, or the like. The thickness of the internal electrode pattern is, for example, 0.2 μm or more and 10 μm or less, from the viewpoint of miniaturizing and increasing the capacity of the multilayer ceramic capacitor. In addition to mother sheets having internal electrode patterns, ceramic dielectric sheets that have not undergone step S4 can also be prepared as mother sheets.

[0017] Next, a plurality of mother sheets are stacked (step S5). Specifically, a predetermined number of mother sheets, each consisting of only ceramic dielectric sheets and without an internal electrode pattern, are stacked to a thickness of, for example, 10 μm or more and 200 μm or less. A predetermined number of mother sheets, each having an internal electrode pattern, are stacked on top of these. At this time, the mother sheets are stacked so that the internal electrode patterns are alternately shifted by half a pitch. The number of mother sheets, each having an internal electrode pattern, stacked is, for example, 10 to 1,000. Further on top of these, a predetermined number of mother sheets, each consisting of only ceramic dielectric sheets and without an internal electrode pattern, are stacked to a thickness of, for example, 10 μm or more and 200 μm or less. In this way, a mother sheet group is formed.

[0018] Next, the mother sheet group is pressure-bonded to form a dielectric block (step S6). Specifically, the mother sheet group is pressed in the stacking direction by a hydrostatic press or a rigid press to form the dielectric block. At this time, the ceramic dielectric sheets are pressed at a predetermined temperature, so that the ceramic dielectric sheets come into close contact with each other.

[0019] Next, the dielectric block is cut to form a laminate (step S7), that is, a laminate is formed in which a plurality of ceramic dielectric sheets including the ceramic dielectric sheets on which the internal electrode patterns are printed are stacked.

[0020] Next, the laminate is fired (step S8). Specifically, the laminate is heated, which fires the dielectric material and the conductive material contained in the laminate, forming a ceramic sintered body. The firing temperature is set appropriately depending on the dielectric material and the conductive material.

[0021] Next, external electrodes are formed (step S9). For example, Ni plating and Sn plating are applied to the ceramic sintered body in this order to form plating layers, thereby forming external electrodes on the outer surfaces of the ceramic sintered body.

[0022] By going through the above-described series of steps, a multilayer ceramic capacitor can be manufactured.

[0023] A defect detection method according to one embodiment of the present invention will be described below. The defect detection method according to one embodiment of the present invention is a defect detection method for detecting defects on the surface of a transparent film used in the manufacture of multilayer ceramic electronic components. The inspection of the surface defects of the transparent film is not limited to the inspection of all transparent films, and may be a sampling inspection performed on some transparent films.

[0024] A defect detection method according to one embodiment of the present invention includes a step of extracting defect candidates based on a first image of the transparent film taken from the surface side at low magnification using reflected light from coaxial incident illumination perpendicular to the surface of the transparent film, and a step of detecting defects from the defect candidates based on a second image of the defect candidates taken at high magnification.

[0025] FIG. 2 is a schematic diagram showing a state in which a transparent film is imaged from the surface side at low magnification in a defect detection method according to one embodiment of the present invention. As shown in FIG. 2 , the transparent film 10 includes a substrate 11 and a release layer 12 formed on the substrate 11. The material of the substrate 11 is not particularly limited as long as it is translucent. The transparency of the transparent film 10 is, for example, 70% or more and 99.99% or less. The haze of the transparent film 10 is, for example, 10% or less. The thickness of the transparent film 10 is, for example, 10 μm or more and 200 μm or less. The thickness of the transparent film 10 may be, for example, 10 μm or more and 100 μm or less, or 10 μm or more and 50 μm or less. The transparent film 10 may be a roll film wound around a core, or a sheet film.

[0026] The substrate 11 contains particulate lubricant 13. The particulate lubricant 13 is a coarse particle containing residual lubricant such as a hydrocarbon-based, fatty acid-based, aliphatic amide-based, ester-based, or metal soap-based lubricant.

[0027] The material of the release layer 12 is not particularly limited, but may be, for example, a material with low surface free energy such as a silicone resin or a fluororesin. In other words, the release layer 12 may be made of an oil-repellent material.

[0028] The transparent film 10 may have surface defects 15. The surface defects 15 include shape abnormalities and composition abnormalities present on the surface 10s of the transparent film 10. The surface defects 15 are, for example, shape abnormalities such as irregularities caused by foreign matter present on the surface 10s of the transparent film 10, or composition abnormalities caused by foreign matter exposed on the surface 10s of the transparent film 10.

[0029] Examples of foreign matter include dust in the air and coarse particles remaining from the polymerization catalyst used in manufacturing the substrate 11. Note that defects 14 such as foreign matter and voids that are located inside the transparent film 10 and do not affect the properties of the surface 10s of the transparent film 10 are not included in the surface defects 15.

[0030] 2, in a defect detection method according to one embodiment of the present invention, first, a first detector 20 is used to image the transparent film 10 from the surface 10s side at low magnification using reflected light 22 from coaxial epi-illumination perpendicular to the surface 10s of the transparent film 10. The object to be inspected is the surface 10s of the transparent film 10 on the side where the release layer 12 is located.

[0031] The first detector 20 scans the surface 10s of the transparent film 10 to capture a first image over a wide range. During scanning, the first detector 20 may move, the transparent film 10 may move, or both the first detector 20 and the transparent film 10 may move. If the first detector 20 has an area-shaped detection region, the first image of the entire inspection region may be generated by combining images captured by intermittent scanning. If the first detector 20 has a line-shaped detection region, the first image of the entire inspection region may be generated by integrating images captured by continuous scanning. Furthermore, when capturing the first image, the first detector 20 may move relative to the transparent film 10, or may remain stationary relative to the transparent film 10.

[0032] Coaxial epi-illumination perpendicular to the surface 10s of the transparent film 10 refers to coaxial epi-illumination perpendicular to the surface 10s of a substantially flat portion that does not include surface defects 15. The color of the illumination light may be monochromatic or white light. The wavelength of the illumination light may be adjusted depending on the object to be imaged. The illumination light may be, for example, red, green, blue, yellow, or purple. The illumination light may be irradiated so as to pass through an optical filter or a polarizing filter. When a polarizing filter is used, the first image may be captured by differential interference contrast. Note that the transparent film 10 does not include a polarizing film.

[0033] By capturing an image using reflected light 22, it is possible to prevent defects 14 and lubricant 13 present inside transparent film 10 from being captured as noise mixed with surface defects 15, as compared to capturing an image using transmitted light that has passed through transparent film 10. The first image is a bright-field image.

[0034] The low magnification is, for example, 1x or more and 10x or less. The low magnification may also be 2x or more and 5x or less. The lower the imaging magnification, the wider the field of view, allowing for a larger inspection area per unit time and improving inspection efficiency. On the other hand, the lower the imaging magnification, the lower the resolution of the captured image, making it more difficult to detect small defects. Note that the terms low magnification and high magnification in this specification refer to low and high imaging magnifications achieved by the optical system, and do not refer to magnifications achieved by digital zoom. In other words, the magnification may be changed appropriately by digital zoom within a range that ensures the required resolution.

[0035] The incident light 21 emitted from the first detector 20 has a viewing angle of 20° or less. The viewing angle of the incident light 21 may be 10° or less, 5° or less, or 3° or less.

[0036] The numerical aperture of the objective lens for capturing the first image is smaller than the numerical aperture of the objective lens for capturing the second image. The numerical aperture of the objective lens for capturing the first image is 0.34 or less. The numerical aperture of the objective lens for capturing the first image may be 0.17 or less, 0.08 or less, or 0.05 or less.

[0037] 3 is a schematic diagram showing a state in which a first image is captured with overfocus relative to the surface of the transparent film. As shown in FIG. 3 , in this embodiment, in the process of extracting defect candidates, a first image is captured with overfocus relative to the surface 10s of the transparent film 10. Specifically, if the distance from the tip of the objective lens of the first detector 20 to the surface 10s of the transparent film 10 is L, the distance from the tip of the objective lens to the focal position is W.D. (working distance), and the distance of the depth of field, which is the range in which the image appears to be in focus, is DoF, the first image is captured with the relationship L > W.D. + DoF / 2. Alternatively, the first image may be captured with the relationship L ≥ W.D. + DoF / 2.

[0038] The distance L from the tip of the objective lens of the first detector 20 to the surface 10s of the transparent film 10 is adjusted appropriately according to the size of the surface defect 15, but the upper limit of the distance L may be, for example, W.D. + DoF > L or W.D. + 3DoF / 2 > L.

[0039] FIG. 4 is a schematic diagram showing a state in which light reflected by a surface defect is imaged as a dark spot without passing through the objective lens of the first detector.

[0040] By capturing the first image with the surface 10s of the transparent film 10 overfocused, the defect 14 and the lubricant 13 located inside the transparent film 10 are out of focus, making them less likely to be captured, thereby reducing noise. As shown in FIG. 4 , the surface defect 15 located on the surface 10s of the transparent film 10 and the defect 14 located near the surface 10s can be captured as dark spots that are distinguishable from the surrounding background. The portions captured as dark spots are extracted as defect candidates. While the method for extracting defect candidates has been described in which defect candidates are captured as dark spots, the objects extracted as defect candidates may also be captured as bright spots that are distinguishable from the background.

[0041] 5 is a graph for explaining a method for extracting defect candidates, in which the vertical axis represents brightness in the first image and the horizontal axis represents position on the surface of the transparent film.

[0042] As a method for extracting defect candidates, for example, a brightness distribution in the first image is acquired, and positions in the brightness distribution that are lower than a reference value of 0 by exceeding a threshold value Lt1 are extracted as defect candidates, as shown in Fig. 5. Note that the method for extracting defect candidates is not limited to the above, and known image analysis methods may also be used.

[0043] In this embodiment, in the step of extracting defect candidates, the positions of the defect candidates on the surface 10s of the transparent film 10 are recorded. For example, the XY coordinates of the defect candidates are recorded with a reference point on the surface 10s of the transparent film 10 as the origin. If the transparent film 10 is in a roll form, the stacking position of the layer in which the defect candidate is located when the transparent film 10 is wound into multiple layers is also recorded. The positions of the defect candidates may be recorded in a recording unit provided in the main body of the first detector 20, or in a server capable of communicating with the first detector 20.

[0044] 6 is a schematic diagram showing a state in which defect candidates are imaged at high magnification in a defect detection method according to an embodiment of the present invention. As shown in FIG. 6, in the defect detection method according to an embodiment of the present invention, defect candidates extracted based on the first image are imaged using a second detector 30.

[0045] The high magnification is, for example, 20 times or more and 150 times or less. The high magnification may also be 50 times or more and 100 times or less. The incident light 31 irradiated from the second detector 30 has a projection angle of 30 degrees or more and 80 degrees or less. The projection angle of the incident light 21 may be 40 degrees or more and 80 degrees or less, 50 degrees or more and 80 degrees or less, or 60 degrees or more and 80 degrees or less.

[0046] The numerical aperture of the objective lens for capturing the second image may be 0.34 or more and 0.98 or less, 0.64 or more and 0.98 or less, 0.76 or more and 0.98 or less, or 0.86 or more and 0.98 or less.

[0047] 7 is a schematic diagram showing the state in which light reflected from a surface defect passes through the objective lens of the second detector and is imaged. By capturing the second image with the defect candidate just in focus, the shape and composition of the defect candidate can be clearly grasped, and as shown in FIG. 7, surface defect 15 located on the surface 10s of the transparent film can be detected from the defect candidate. In other words, among the defect candidates, defects that are not located on the surface 10s of the transparent film 10 but are located inside the transparent film 10, and defects that are located near the surface 10s but do not affect the properties of the surface 10s, etc., can be excluded from detection targets.

[0048] In this embodiment, in the defect detection process, a second image is captured at the position of the recorded defect candidate. For example, the surface defect 15 is imaged by the second detector 30, which is moved to the XY coordinate position of the recorded defect candidate. If the first detector 20 and the second detector 30 have the same main body and are equipped with switchable objective lenses, the second image may be captured by switching from a low-magnification objective lens to a high-magnification objective lens with the defect candidate positioned at the center of the field of view of the first image.

[0049] The defect detection method according to this embodiment includes a step of extracting defect candidates based on a first image of the transparent film 10 captured at low magnification from the surface 10s side using reflected light 22 emitted by coaxial epi-illumination perpendicular to the surface 10s of the transparent film 10, and a step of detecting defects from the defect candidates based on a second image of the defect candidates captured at high magnification. This makes it possible to suppress the detection of noise, such as defects inside the transparent film 10 and defects present inside the surface 10s located near the surface 10s of the transparent film 10, and to detect only defects present on the surface 10s of the transparent film 10.

[0050] In the method for manufacturing a multilayer ceramic capacitor according to this embodiment, by forming a ceramic dielectric sheet on the surface 10s of the transparent film 10 where no surface defects 15 were detected, it is possible to prevent microdefects from occurring inside the multilayer ceramic electronic component, thereby improving the reliability of the multilayer ceramic electronic component.

[0051] (Note) It will be understood by those skilled in the art that the exemplary embodiments described above are specific examples of the following aspects.

[0052] <1> A defect detection method for detecting defects on the surface of a transparent film used in the manufacture of a multilayer ceramic electronic component, the defect detection method comprising: a step of extracting defect candidates based on a first image obtained by capturing the transparent film from the surface side at a low magnification using reflected light from coaxial epi-illumination perpendicular to the surface of the transparent film; and a step of detecting the defects from the defect candidates based on a second image obtained by capturing the defect candidates at a high magnification.

[0053] <2> The defect detection method according to <1>, wherein in the step of extracting the defect candidate, the first image is captured with the surface overfocused.

[0054] <3> The defect detection method according to <1> or <2>, wherein in the step of extracting the defect candidate, the position of the defect candidate on the surface of the transparent film is recorded, and in the step of detecting the defect, the second image is captured at the recorded position.

[0055] <4> The defect detection method according to any one of <1> to <3>, wherein the low magnification is 1x or more and 10x or less, and the high magnification is 20x or more and 150x or less.

[0056] <5> The defect detection method according to any one of <1> to <4>, wherein a numerical aperture of an objective lens for capturing the first image is smaller than a numerical aperture of an objective lens for capturing the second image.

[0057] <6> A method for manufacturing a multilayer ceramic electronic component, comprising: a step of detecting defects on the surface of a transparent film; a step of forming a plurality of ceramic dielectric sheets on the transparent film by applying and drying a ceramic dielectric slurry to surfaces of the transparent film on which no defects have been detected; a step of forming internal electrode patterns on some of the plurality of ceramic dielectric sheets; a step of forming a laminate in which the plurality of ceramic dielectric sheets including the some of the ceramic dielectric sheets on which the internal electrode patterns have been formed are stacked; a step of firing the laminate to form a ceramic sintered body; and a step of forming external electrodes on the ceramic sintered body, wherein the step of detecting defects includes a step of extracting defect candidates based on a first image obtained by capturing the transparent film from the surface side at a low magnification using reflected light from coaxial epi-illumination perpendicular to the surface of the transparent film; and a step of detecting the defects from the defect candidates based on a second image obtained by capturing the defect candidates at a high magnification.

[0058] <7> The method for manufacturing a multilayer ceramic electronic component according to <6>, wherein in the step of extracting the defect candidate, the first image is captured with the surface overfocused.

[0059] <8> The method for manufacturing a multilayer ceramic electronic component according to <6> or <7>, wherein, in the step of extracting the defect candidate, positions of the defect candidate on the surface of the transparent film are recorded, and in the step of detecting the defect, the second image is captured at the recorded positions.

[0060] <9> The method for producing a multilayer ceramic electronic component according to any one of <6> to <8>, wherein the low magnification is 1 to 10 times, and the high magnification is 20 to 150 times.

[0061] <10> The method for manufacturing a multilayer ceramic electronic component according to any one of <6> to <9>, wherein a numerical aperture of an objective lens for capturing the first image is smaller than a numerical aperture of an objective lens for capturing the second image.

[0062] In the above-described embodiments, configurations that can be combined may be combined with each other.

[0063] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the above description, and is intended to include all modifications within the meaning and scope of the claims.

[0064] 10 Transparent film, 10s Surface, 11 Substrate, 12 Release layer, 13 Lubricant, 14 Defect, 15 Surface defect, 20 First detector, 21, 31 Incident light, 22 Reflected light, 30 Second detector.

Claims

1. A defect detection method for detecting defects on the surface of a transparent film used in the manufacture of multilayer ceramic electronic components, comprising the steps of: extracting defect candidates based on a first image of the transparent film taken from the surface side at low magnification using reflected light from coaxial epi-illumination perpendicular to the surface of the transparent film; and detecting the defects from the defect candidates based on a second image of the defect candidates taken at high magnification.

2. The defect detection method according to claim 1, wherein in the step of extracting the defect candidate, the first image is taken with the surface overfocused.

3. A defect detection method as described in claim 1 or claim 2, wherein in the step of extracting the defect candidate, the position of the defect candidate on the surface of the transparent film is recorded, and in the step of detecting the defect, the second image is captured at the recorded position.

4. A defect detection method according to any one of claims 1 to 3, wherein the low magnification is between 1x and 10x, and the high magnification is between 20x and 150x.

5. A defect detection method according to any one of claims 1 to 4, wherein the numerical aperture of the objective lens for capturing the first image is smaller than the numerical aperture of the objective lens for capturing the second image.

6. A method for manufacturing a multilayer ceramic electronic component, comprising: a step of detecting defects on the surface of a transparent film; a step of forming a plurality of ceramic dielectric sheets on the transparent film by applying and drying a ceramic dielectric slurry to the surface of the transparent film where no defects have been detected; a step of forming internal electrode patterns on some of the plurality of ceramic dielectric sheets; a step of forming a laminate in which the plurality of ceramic dielectric sheets including the some of the ceramic dielectric sheets on which the internal electrode patterns have been formed are stacked; a step of firing the laminate to form a ceramic sintered body; and a step of forming external electrodes on the ceramic sintered body, wherein the step of detecting defects includes a step of extracting defect candidates based on a first image obtained by capturing the transparent film from the surface side at a low magnification using reflected light from coaxial epi-illumination perpendicular to the surface of the transparent film; and a step of detecting the defects from the defect candidates based on a second image obtained by capturing the defect candidates at a high magnification.

7. The method for manufacturing a monolithic ceramic electronic component according to claim 6, wherein in the step of extracting defect candidates, the first image is taken with the surface overfocused.

8. A method for manufacturing a multilayer ceramic electronic component according to claim 6 or 7, wherein in the step of extracting defect candidates, the positions of the defect candidates on the surface of the transparent film are recorded, and in the step of detecting defects, the second image is taken at the recorded positions.

9. A method for manufacturing a multilayer ceramic electronic component according to any one of claims 6 to 8, wherein the low magnification is 1 to 10 times, and the high magnification is 20 to 150 times.

10. A method for manufacturing a multilayer ceramic electronic component according to any one of claims 6 to 9, wherein the numerical aperture of the objective lens for capturing the first image is smaller than the numerical aperture of the objective lens for capturing the second image.

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