Energy conversion systems including a ballistic rectifier energy converter and uses thereof

Abstract

Energy conversion systems and uses thereof, and, more particularly, energy conversion systems including a ballistic rectifier energy converter and uses thereof. A device (200) that includes one or more of the energy conversion systems having a ballistic rectifier energy converter utilizes graphene (such as suspended graphene made with a low-oxygen chemical vapor deposition, CVD, process) as the resistor to produce an alternating-current, AC, thermal voltage. This AC thermal voltage is then converted into a DC voltage by an array of graphene ballistic rectifiers to power various devices. Energy conversion systems and uses thereof, and, more particularly, energy conversion systems including a ballistic rectifier utilizing suspended graphene and uses thereof.

Description

ENERGY CONVERSION SYSTEMS INCLUDING A BALLISTIC RECTIFIER ENERGY CONVERTER AND USES THEREOFRELATED PATENTS / PATENT APPLICATIONS

[0001] This application is related to U.S. Patent Appl. Ser. No. 63 / 672,643, filed July 17, 2024, and U.S. PatentAppl. Ser. No. 63 / 756,637, filedFebruary 10, 2025, both to Joseph F. Pinkerton, and both entitled “Energy Conversion Systems Including Ballistic Rectifier Energy Converter And Uses Thereof.” These patent applications are incorporated herein in their entirety for all purposes.TECHNICAL FIELD

[0002] The present invention relates to energy conversion systems and uses thereof, and, more particularly, energy conversion systems including a ballistic rectifier energy converter and uses thereof.BACKGROUND

[0003] A ballistic rectifier can be understood, by a simple concept; that the materials (gas molecules, electrons, etc.) behave as if they were classical Newtonian particles. Some materials (such as electrons) can respond to electromagnetic fields; but the materials otherwise travel in straight paths until they encounter obstacles, from which they are reflected. An asymmetric structure (such as an asymmetric angled structure) can deflect the particles and this causes the rectification. See A. M. Song, “Room-Temperature Ballistic Nanodevices,” Encyclopedia of nanoscience and Nanotechnology, X, 1 (2004).

[0004] U.S. Patent No. 10,670,001, entitled “Energy Conversion System Including A Ballistic Rectifier Assembly And Uses Thereof,” issued June 2, 2020 to Joseph F. Pinkerton (^‘Pinkerton ’001 Patent”), which is incorporated herein in its entirety, discloses and teaches an energy conversion system that employs ballistic rectifier assemblies. For example, FIG. 1 (which is FIG. 5D of the Pinkerton ’001 Patent) depicts an energy conversion system that employs an electrical ballistic rectifier assembly 520. G. Auton et al., “Graphene Ballistic Nano-RectifierWith Very High Responsivity,” Nature Communications 7, Article number: 11670 (2016) describes how a graphene-based ballistic rectifier operates in general.

[0005] If the mean free path 531 of the electron 529 (or other charge carrier) is between 0.1 and 10 times path length 1 (which is similar to the length of the graphene vane) the electrons 529 entering from the resistor terminals 521 (the resistors 525-528 generate an AC Johnson noise voltage) should move on average in direction 210. Since the mean free path of graphene 524 on top of hexagonal boron nitride (HBN) 523 (which is on top of the substrate 522, such as SiCh) is around 1000 nm the path length should be around 1000 nm.

[0006] For instance, many structures 520 such as shown in FIG. 1 can be arranged in series to increase voltage and be placed in parallel to increase current. Increasing the resistance of resistors 525-528 will increase the output voltage (but not the power output since current will decrease with increased resistance). An increase in power per square centimeter can be obtained by making many layers of substrate / HBN / graphene / HBN / substrate / efc.

[0007] In energy conversion system using an electrical ballistic rectifier assembly 520, heat (shown by arrow 530) is converted directly into an electrical output without the need for a turbine-generator. One application can be to convert the heat of a person's wrist / arm into an electrical output to partially or fully power a smartwatch.

[0008] If one stage (one resistor and two angled legs of graphene / HBN) takes up one square micrometer, the effective bandwidth of the ballistic rectifier is 1 GHz and each resistor is 10,000 ohms, a 1 square centimeter array (10,000 stages in series and 10,000 in parallel) will produce about 1.7 milliwatts at 4 volts (a voltage compatible with most smartphones). For a 6x10 cm substrate (about the size of a smartphone), the single layer array should produce about 100 mW (enough to trickle charge a smartphone battery). If a 10-layer thick array that is 6x10 cm is utilized, the system should produce about 1 watt (enough to power a smartphone indefinitely).SUMMARY OF THE INVENTION

[0009] The present invention relates to energy conversion systems and uses thereof, and, more particularly, energy conversion systems including a ballistic rectifier energy converter and uses thereof

[0010] In general, in one aspect, the invention features an array of energy conversion systems. The energy conversion systems in the array include a ballistic rectifier energy converter (ECS- BREC). The ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel. The ECS-BREC includes graphene between a first hexagonal boron nitride layer and a second hexagonal boron nitride layer. The ECS-BREC further includes a substrate. The second hexagonal boron nitride layer is on the substrate. The graphene is patterned, wherein there are void spaces in the graphene. The graphene is operable as a thermal resistor of the ECS-BREC. The ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges. The electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

[0011] Implementations of the invention can include one or more of the following features:

[0012] The graphene can be one sheet of graphene.

[0013] The graphene can be multiple sheets of graphene.

[0014] The ECS-BRECs in the array of the energy conversion systems can be arranged in series.

[0015] The ECS-BRECs in the array of the energy conversion systems can be arranged in parallel.

[0016] The substrate can include SiCE.

[0017] The ECS-BREC can further include a conductive trace. The substrate can be on the conductive trace.

[0018] The conductive trace can be a copper trace.

[0019] The conductive trace can be on silicon.

[0020] A gate voltage can be operatively connected to the conductive trace to increase or decrease voltage and / or current of the device.

[0021] In general, in another aspect, the invention features a method of making the ECS- BRECs of any of the above-described ECS-BREC’s in the array of the energy conversion systems. The method includes arranging the second hexagonal boron nitride layer and the substrate, wherein the second hexagonal boron nitride layer is on the substrate. The method further includes transferring the graphene on the second hexagonal boron nitride layer. The method further includes, after transferring the graphene, patterning the graphene, wherein there are void spaces in the graphene. The method further includes placing the first hexagonal boron nitride layer on top of the patterned graphene.

[0022] In general, in another aspect, the invention features a method of making the ECS- BRECs of any of the above-described ECS-BREC’s in the array of the energy conversion systems. The method includes arranging the second hexagonal boron nitride layer and the substrate, wherein the second hexagonal boron nitride layer is on the substrate. The method further includes growing graphene on a metal foil substrate using a CVD process. The method further includes back etching the graphene to pattern the graphene, wherein there are void spaces in the graphene. The method further includes transferring the graphene on the second hexagonal boron nitride layer. The method further includes placing the first hexagonal boron nitride layer on top of the patterned graphene.

[0023] In general, in another aspect, the invention features a device that includes any of the above-described arrays of the energy conversion systems. The device is selected from the group consisting of smart-phones, smart-watches, and microprocessors.

[0024] In general, in another aspect, the invention features an array of energy conversion systems. The energy conversion systems in the array includes a ballistic rectifier energyconverter (ECS-BREC). The ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel. The ECS-BREC includes graphene suspended and in thermal contact of metal traces. The ECS-BREC further includes the metal traces are thermally connected to a bottom metal layer. The ECS-BREC further includes a silicon material on the bottom metal layer. The ECS-BREC further includes a substrate on the silicon material. The metal traces are thermally connected to the bottom layer through vias of the silicon material and substrate. The suspended graphene is operable as a thermal resistor of the ECS-BREC. The ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges. The electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

[0025] Implementations of the invention can include one or more of the following features:

[0026] The silicon material can be operable as a bottom gate to increase or decrease voltage output of the array.

[0027] The ECS-BRECs in the array of the energy conversion systems can be arranged in series.

[0028] The ECS-BRECs in the array of the energy conversion systems can be arranged in parallel.

[0029] The substrate can include SiCE.

[0030] The metal traces can be gold traces.

[0031] The bottom metal layer can include copper.

[0032] The graphene can be patterned graphene, wherein there are void spaces in the patterned graphene.

[0033] The array does not include hexagonal boron nitride.

[0034] In general, in another aspect, the invention features an array of energy conversion systems. The energy conversion systems in the array include a ballistic rectifier energyconverter (ECS-BREC). The ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel. The ECS-BREC includes graphene suspended and in thermal contact of metal traces. The ECS-BREC further includes a metal island deposited on top of the metal traces. The ECS-BREC further includes a silicon material on the bottom metal layer. The ECS-BREC further includes a substrate on the silicon material. The suspended graphene is operable as a thermal resistor of the ECS-BREC. The ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges. The electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

[0035] In general, in another aspect, the invention features a device that includes any of the above-described arrays of the energy conversion systems. The device is selected from the group consisting of smart-phones, smart-watches, and microprocessors.

[0036] In general, in another aspect, the invention features an array of energy conversion systems. The energy conversion systems in the array include a ballistic rectifier energy converter (ECS-BREC). The ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel. The ECS-BREC include graphene with suspended sections on a substrate. A portion of the suspended graphene is operable as a thermal resistor of the ECS-BREC. The ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges. The electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

[0037] Implementations of the invention can include one or more of the following features:

[0038] The substrate can include silicon dioxide.

[0039] The graphene can be CVD graphene grown in a low oxygen environment.

[0040] The voltage can be a DC voltage.DESCRIPTION OF DRAWINGS

[0041] FIG. 1 depicts a view of a prior art an energy conversion system having a ballistic rectifier (ECS-BR) (which is FIG. 5D of the Pinkerton ’001 Patent).

[0042] FIG. 2 depicts a device having a series of energy conversion systems having a ballistic rectifier energy converter (ECS-BREC).

[0043] FIG. 3 depicts a magnified view of two of the ECS-BRECs in series shown in FIG. 2.

[0044] FIG. 4A depicts a magnified view of one of the ECS-BRECs shown in FIG. 3.

[0045] FIG. 4B depicts cross-sectional view A-A’ of the ECS-BREC shown in FIG. 4A.

[0046] FIG. 5 depicts an alternative embodiment of an ECS-BREC that can be used in the device of FIG. 2.

[0047] FIG. 6A depicts another alternative embodiment of a series of ECS-BRECs that can be used in an ECS-BREC device.

[0048] FIGS. 6B-6D depict cross-section views B-B’, C-C’, and D-D’, respectively, of the ECS-BREC series shown in FIG. 6A.

[0049] FIG. 7 depicts the device of FIG. 2 that provides for a current to run alone the entire length of the series of energy conversion systems.

[0050] FIG. 8A depicts another alternative embodiment of a series of ECS-BRECs that can be used in an ECS-BREC device.

[0051] FIG. 8B depict cross-section view E-E’ of the ECS-BREC series shown in FIG. 8A.

[0052] FIG. 9A depicts another alternative embodiment of a series of ECS-BRECs that can be used in an ECS-BREC device.

[0053] FIG. 9B depict cross-section view F-F’ of the ECS-BREC series shown in FIG. 10A.DETAILED DESCRIPTION

[0054] The present invention relates to energy conversion systems and uses thereof, and, more particularly, energy conversion systems including a ballistic rectifier energy converter and usesthereof.

[0055] It has been discovered that the energy conversion system having a ballistic rectifier (ECS-BR) can be improved by using the graphene of the ballistic rectifier itself as the resistor (actually an array of resistors), which enhances performance and simplifies production. For instance, oxygen-free graphene such as set forth in J. Amontree, etal., “Reproducible Graphene Synthesis By Oxygen-Free Chemical Vapour Deposition,” Nature 630, 636-642 (2024) CAmonlree 2024") can be utilized, which further aides in significantly lowering the production cost of the energy conversion systems that include a ballistic rectifier. Such energy conversion systems that include ballistic rectifier energy converters (BRECs) are also referred to as ECS- BRECs.

[0056] FIG. 2 shows a device 200 having a series of energy conversion systems having a ballistic rectifier energy converter (ECS-BREC). Box 300 outlines two of ECS-BRECs in device 200. Device 200 can have thousands, millions, or more ECS-BRECs. Device 200 can be in a serpentine shape, such as shown in FIG. 2. The use of the ECS-BRECs in series can be used to increase the DC output voltage. (In other embodiments, the ECS-BRECs can be used in parallel to increase the DC output current).

[0057] FIG. 3 depicts a magnified view of two of the ECS-BRECs in box 300, which ECS- BRECs are in series. FIGS. 3 shows several mean free path trajectories of the electrons in the ECS-BRECs (generated from the thermal resistance noise from the graphene itself) resulting in the conversion of heat to an electrical output (as shown). I.e., the thermal noise from a resistor comprised of graphene creates a small DC voltage.

[0058] FIG. 4A shows a magnified view of one of the ECS-BRECs shown in FIG. 3. Graphene 401 with void spaces 402 is utilized as the resistor in the ECS-BREC. As shown in FIGS. 2-3 and FIG. 4A, a sheet of graphene 401 is used as an array of ECS-BRECs. In alternative embodiments, multiple sheets of graphene can be utilized.

[0059] FIG. 4B shows cross-sectional view A-A’ of the ECS-BREC shown in FIG. 4B. As shown in FIG. 4B, graphene 401 is between hexagonal boron nitride (HBN) 414 and hexagonal boron nitride (HBN) 415. HBN 414 is on substrate 413 (such as SiCE substrate). (This is similar to the hexagonal boron nitrate (HBN) 523 that is on top of substrate 522 shown in FIG. 1). Substrate 413 is on conductive trace 412 (such as a copper trace). The conductive trace 412 is on silicon 411 or other similar material.

[0060] For example, to make the ECS-BREC as shown in FIG. 4B, graphene 401 (such CVD graphene of Amontree 2024) can be transferred to the Si 411 / Cu 412 / SiO2 413 / HBN 414 substrate and patterned as shown in the drawing. Another layer of hexagonal boron nitride (HNB 415) can then be placed on top of graphene 401. Using CVD graphene such as Amontree 2024 further means that large arrays of the ECS-BREC device can be made in volume at low cost.

[0061] Alternatively, the copper foil substrate that is used to grow (using a CVD process) graphene 401 can be back etched to make suspended spans of graphene in the desired shape before transferring the patterned graphene to the Si 411 / Cu 412 / SiO2 413 / HBN 414 substrate.

[0062] A gate voltage (such as applied to copper layer 412 in FIG. 4B) can be used to increase or decrease the voltage / current of the device 200 to suit a given application. Applications include converting the heat of smartphone or data center server microprocessors into DC power (which can then be used to power the microprocessor) to reduce the power consumption of these devices.

[0063] FIG. 5 depicts an alternative embodiment of an ECS-BREC that can be used in the device of FIG. 2. Similar to FIGS. 3, FIG. 5 shows the many mean free path of the electrons in the ECS-BRECs.

[0064] FIG. 6A depicts a series 600 of ECS-BRECs that can alternatively be used in an ECS-BREC device or in a device that can be used as an improved ballistic rectifier. FIGS. 6B-6Ddepict cross-section views B-B’, C-C’, and D-D’, respectively, of the ECS-BREC series 600.FIGS. 6A-6D show a BREC device that uses suspended graphene 601. As can be seen, the“resistor” section is also suspended and in thermal contact with a metal / gold trace 603 that is used to transfer heat to the graphene 601. A metal / copper layer 605 has been added to the bottom of the BREC chip, which is thermally connected to several metal / copper traces through silicon vias (TSVs) 602 that are in turn thermally connected to the metal / gold traces 603. Such a design allows the BREC chip to be placed, for example, on a warm / hot IC (such as a microprocessor) and transfer the heat to the suspended graphene “resistor” (the BREC then converts this heat into a useable DC voltage that can be used to help power the IC). Material 606 can be silicon, which can be used as a bottom gate to increase or decrease the DC voltage output of the BREC array.

[0065] An external voltage can be applied to the two parallel metal / gold traces 603 to heat- treat the suspended graphene 601 (to increase the mean free path of charges that travel through the graphene). The graphene can be heat-treated with a current that runs the entire length of a long series chain of BREC devices. FIG. 7.

[0066] By this arrangement, suspended graphene 601 (which can be made with a low oxygen CVD process) does not need to be encapsulated in hexagonal boron nitride (which is very difficult to mass produce). Moreover, by this arrangement, one resistive loop of graphene is used by two ballistic rectifiers instead of one, which roughly doubles the DC voltage for a given resistive loop of graphene. Still further, by this arrangement, a thermally conductive through silicon via 602 transports heat from the bottom of the chip (which is thermal contact with something warm like a microprocessor) to the resistive loop of graphene.

[0067] In alternative embodiments, a metal island can be deposited over metal / gold trace 603 in the same location as through silicon via 602 in FIGS. 6A-6D to conduct heat from the top of the BREC chip to the graphene. The top of the BREC chip can then be placed againstsomething warm.

[0068] FIGS. 8A and 9A depict, respectively, a series of ECS-BRECs 800 and 900 that can be used in an ECS-BREC device. FIG. 8B depict cross-section view E-E’ of the ECS-BREC series 800. FIG. 9B depict cross-section view F-F’ of the ECS-BREC series 900. Similar to ECS-BREC series 600, ECS-BREC series 800 and 900 utilize suspended graphene (albeit a simpler design, which likely results in a lower performance).

[0069] While embodiments of the invention have been shown and described, modifications thereof can be made by one skilled in the art without departing from the spirit and teachings of the invention. The embodiments described and the examples provided herein are exemplary only, and are not intended to be limiting. Many variations and modifications of the invention disclosed herein are possible and are within the scope of the invention. Accordingly, other embodiments are within the scope of the following claims. The scope of protection is not limited by the description set out above, but is only limited by the claims which follow, that scope including all equivalents of the subject matter of the claims.

[0070] The disclosures of all patents, patent applications, and publications cited herein are hereby incorporated herein by reference in their entirety, to the extent that they provide exemplary, procedural, or other details supplementary to those set forth herein.

[0071] Amounts and other numerical data may be presented herein in a range format. It is to be understood that such range format is used merely for convenience and brevity and should be interpreted flexibly to include not only the numerical values explicitly recited as the limits of the range, but also to include all the individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly recited. For example, a numerical range of approximately 1 to approximately 4.5 should be interpreted to include not only the explicitly recited limits of 1 to approximately 4.5, but also to include individual numerals such as 2, 3, 4, and sub-ranges such as 1 to 3, 2 to 4, etc. The same principle appliesto ranges reciting only one numerical value, such as “less than approximately 4.5,” which should be interpreted to include all of the above-recited values and ranges. Further, such an interpretation should apply regardless of the breadth of the range or the characteristic being described.

[0072] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood to one of ordinary skill in the art to which the presently disclosed subject matter belongs. Although any methods, devices, and materials similar or equivalent to those described herein can be used in the practice or testing of the presently disclosed subject matter, representative methods, devices, and materials are now described.

[0073] Following long-standing patent law convention, the terms “a” and “an” mean “one or more” when used in this application, including the claims.

[0074] Unless otherwise indicated, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term “about.” Accordingly, unless indicated to the contrary, the numerical parameters set forth in this specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the presently disclosed subject matter.

[0075] As used herein, the term “about” and “substantially” when referring to a value or to an amount of mass, weight, time, volume, concentration or percentage is meant to encompass variations of in some embodiments ±20%, in some embodiments ±10%, in some embodiments ±5%, in some embodiments ±1%, in some embodiments ±0.5%, and in some embodiments ±0.1% from the specified amount, as such variations are appropriate to perform the disclosed method.

[0076] As used herein, the term “substantially perpendicular” and “substantially parallel” is meant to encompass variations of in some embodiments within ±10° of the perpendicular andparallel directions, respectively, in some embodiments within ±5° of the perpendicular and parallel directions, respectively, in some embodiments within ±1° of the perpendicular and parallel directions, respectively, and in some embodiments within ±0.5° of the perpendicular and parallel directions, respectively

[0077] As used herein, the term “and / or” when used in the context of a listing of entities, refers to the entities being present singly or in combination. Thus, for example, the phrase “A, B, C, and / or D” includes A, B, C, and D individually, but also includes any and all combinations and subcombinations of A, B, C, and D.

Claims

WHAT IS CLAIMED IS1. An array of energy conversion systems, wherein the energy conversion systems in the array comprise a ballistic rectifier energy converter (ECS-BREC), wherein:(a) the ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel;(b) the ECS-BREC comprises(i) graphene between a first hexagonal boron nitride layer and a second hexagonal boron nitride layer, and(ii) a substrate, wherein the second hexagonal boron nitride layer is on the substrate, wherein(A) the graphene is patterned, wherein there are void spaces in the graphene, and(B) the graphene is operable as a thermal resistor of the ECS-BREC,(c) the ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges, and(d) the electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

2. The array of the energy conversion systems of Claim 1, wherein the graphene is one sheet of graphene.

3. The array of the energy conversion systems of Claim 1, wherein the graphene is multiple sheets of graphene.

4. The array of the energy conversion systems of Claims 1-3, wherein the ECS-BRECs in the array of the energy conversion systems are arranged in series.

5. The array of the energy conversion systems of Claims 1-3, wherein the ECS-BRECs in the array of the energy conversion systems are arranged in parallel.

6. The array of the energy conversion systems of Claims 1-5, wherein the substrate comprises SiCE.

7. The array of the energy conversion systems of Claims 1-6, wherein(a) the ECS-BREC further includes a conductive trace, and(b) the substrate is on the conductive trace.

8. The array of the energy conversion systems of Claim 7, wherein the conductive trace is on silicon.

9. The array of the energy conversion systems of Claims 7-8, wherein a gate voltage is operatively connected to the conductive trace to increase or decrease voltage and / or current of the device.

10. A method of making the ECS-BRECs of the array of the energy conversion systems of any of Claims 1-9, wherein the method comprises:(a) arranging the second hexagonal boron nitride layer and the substrate, wherein the second hexagonal boron nitride layer is on the substrate;(b) transferring the graphene on the second hexagonal boron nitride layer;(c) after transferring the graphene, patterning the graphene, wherein there are void spaces in the graphene; and(d) placing the first hexagonal boron nitride layer on top of the patterned graphene.

11. A method of making the ECS-BRECs of the array of the energy conversion systems of any of Claims 1-9, wherein(a) arranging the second hexagonal boron nitride layer and the substrate, wherein the second hexagonal boron nitride layer is on the substrate;(b) growing graphene on a metal foil substrate using a CVD process;(c) back etching the graphene to pattern the graphene, wherein there are void spaces in the graphene;(d) transferring the graphene on the second hexagonal boron nitride layer; and(e) placing the first hexagonal boron nitride layer on top of the patterned graphene.

12. A device comprising the array of the energy conversion systems of any of Claims 1-9, wherein the device is selected from the group consisting of smart-phones, smart-watches, and microprocessors.

13. An array of energy conversion systems, wherein the energy conversion systems in the array comprise a ballistic rectifier energy converter (ECS-BREC), wherein:(a) the ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel;(b) the ECS-BREC comprises(i) graphene suspended and in thermal contact of metal traces,(ii) the metal traces are thermally connected to a bottom metal layer,(iii) a silicon material on the bottom metal layer, and(iv) a substrate on the silicon material, wherein(A) the metal traces are thermally connected to the bottom layer through vias of the silicon material and substrate, and(B) the suspended graphene is operable as a thermal resistor of the ECS-BREC,(c) the ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges, and(d) the electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

14. The array of the energy conversion systems of Claim 13, wherein the silicon material is operable as a bottom gate to increase or decrease voltage output of the array.

15. The array of the energy conversion systems of Claims 13-14, wherein the ECS-BRECs in the array of the energy conversion systems are arranged in series.

16. The array of the energy conversion systems of Claims 13-14, wherein the ECS-BRECs in the array of the energy conversion systems are arranged in parallel.

17. The array of the energy conversion systems of Claims 13-16, wherein the substrate comprises SiCE.

18. The array of the energy conversion systems of any of Claims 13-17, wherein the metal traces are gold traces.

19. The array of the energy conversion systems of any of Claims 13-18, wherein the bottom metal layer comprises copper.

20. The array of the energy conversion systems of any of Claims 13-19, wherein the graphene is patterned graphene, wherein there are void spaces in the patterned graphene.

21. The array of the energy conversion systems of any of Claims 13-20, wherein the array does not comprise hexagonal boron nitride.

22. An array of energy conversion systems, wherein the energy conversion systems in the array comprise a ballistic rectifier energy converter (ECS-BREC), wherein:(a) the ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel;(b) the ECS-BREC comprises(i) graphene suspended and in thermal contact of metal traces,(ii) a metal island deposited on top of the metal traces,(iii) a silicon material on the bottom metal layer, and(iv) a substrate on the silicon material, wherein the suspended graphene is operable as a thermal resistor of the ECS-BREC,(c) the ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges, and(d) the electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

23. A device comprising the array of the energy conversion systems of any of Claims 13- 22, wherein the device is selected from the group consisting of smart-phones, smart-watches, and microprocessors.

24. An array of energy conversion systems, wherein the energy conversion systems in the array comprise a ballistic rectifier energy converter (ECS-BREC), wherein:(a) the ECS-BRECs in the array of the energy conversion systems are arranged in series and / or in parallel;(b) the ECS-BREC comprises graphene with suspended sections on a substrate, wherein a portion of the suspended graphene is operable as a thermal resistor of the ECS-BREC;(c) the ECS-BREC is operable to create thermal resistance noise from the graphene resulting in the conversion of heat to traject electrical charges, and(d) the electrical charges are operatively trajected along mean free paths of the ECS-BREC to create a voltage.

25. The array of Claim 24, wherein the substrate is comprised of silicon dioxide.

26. The array of any of Claims 24-25, wherein the graphene is CVD graphene grown in a low oxygen environment.

27. The array of any of Claims 24-26, wherein the voltage is a DC voltage.

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