Tandem solar cell and preparation method therefor

Abstract

The present invention provides a tandem solar cell and a preparation method therefor. The tandem solar cell comprises a plurality of insulating layers arranged in sequence. A first electrode layer, a first light absorption layer, and a first carrier transport layer are sequentially arranged on the right side of each insulating layer from bottom to top. A second electrode layer, a second carrier transport layer, and a second light absorption layer are sequentially arranged on the left side of each insulating layer from bottom to top, the second light absorption layer comprising a plurality of vertical regions and a horizontal region. An upper surface of a third carrier transport layer is in contact with a lower surface of the horizontal region, and a lower surface of the third carrier transport layer is in contact with an upper surface of the first carrier transport layer. The carrier type of the first carrier transport layer is the same as that of the second carrier transport layer, and is opposite to that of the third carrier transport layer. The present invention can improve the device performance and stability of tandem solar cells, such as all-perovskite tandem cells and perovskite / copper indium gallium selenide (CIGS) tandem cells, and has broad application prospects.

Description

Stacked solar cell and preparation method thereof TECHNICAL FIELD

[0001] The present application mainly relates to the technical field of solar cells, and particularly relates to a stacked solar cell and a preparation method thereof. BACKGROUND

[0002] Inorganic-organic metal halide perovskite material is suitable for being used as a light absorption layer of a solar cell due to excellent photoelectric performance and low cost advantage, and the band gap of the peroviskite material is adjustable, so that the peroviskite material can be stacked with other photovoltaic materials, such as crystalline silicon material, copper indium gallium selenium material, peroviskite material, cadmium telluride material, gallium arsenide material and organic photovoltaic material, to form a stacked solar cell, and extremely high photoelectric conversion efficiency can be achieved.

[0003] Currently reported two-end crystalline silicon peroviskite stacked cells all adopt the stacked cell device structure designed by Oxford Photovoltaics, which comprises a crystalline silicon bottom cell, a peroviskite top cell, a connecting layer between the crystalline silicon peroviskite and the top and bottom electrode layers. The remaining types of bottom cells, such as full peroviskite stacked cells, peroviskite / copper indium gallium selenium stacked cells, peroviskite / organic stacked cells and peroviskite / gallium arsenide stacked cells, also adopt the stacked cell structure. In addition, a substrate type full peroviskite stacked cell designed by Nanjing University, the peroviskite stacked cell takes a metal copper foil as a substrate, a peroviskite with a narrow band gap as a bottom cell, a peroviskite with a wide band gap as a top cell, ALD-SnO2 / Au / PEDOT-PSS as a tunneling layer, IZO as a transparent conductive top electrode and Cu as a bottom electrode. A peroviskite / copper indium gallium selenium stacked cell designed by the University of California, Los Angeles, the bottom cell of the stacked cell is a copper indium gallium selenium cell, and the top cell is a wide band gap peroviskite cell. These stacked cells all lead electrodes to the upper and lower ends of the device.

[0004] The above cells have some deficiencies: 1, the combination of the top semi-transparent electrode and the metal grid line will significantly reduce the overall light absorption of the stacked cell, including the long-wave reflection and absorption of the transparent electrode, the shielding of the metal grid line, etc., and the reduction of current will significantly reduce the efficiency; 2, the thickness of the transparent conductive electrode is relatively thin, and if the thickness is increased, it will affect the light absorption, and the thin layer of TCO is difficult to block the diffusion of metal ions to the peroviskite layer, resulting in a significant decrease in stability; 3, for full peroviskite stacked cells, the peroviskite exposed on the surface will cause the oxidation of the absorption layer; 4, the passivation material of the contact interface between the peroviskite top cell and C60 not only needs to consider the passivation effect of the material, but also needs to consider its conductivity, and the material with low conductivity and high passivation effect cannot be used in this layer, which reduces the selection range of the surface passivation material of the peroviskite. SUMMARY

[0005] The technical problem solved by the present application is to provide a stacked solar cell and a preparation method thereof, so as to improve the device performance and stability of the stacked solar cell.

[0006] To solve the above technical problem, in a first aspect, the present application provides a stacked solar cell, comprising: a plurality of insulating layers, a first cell and a second cell; the plurality of insulating layers are arranged in sequence and used to separate a first light absorption layer of the first cell and a second light absorption layer of the second cell; a first electrode layer, the first light absorption layer and a first carrier transport layer are sequentially arranged from bottom to top on the right side of each insulating layer; a second electrode layer, a second carrier transport layer and the second light absorption layer are sequentially arranged from bottom to top on the left side of each insulating layer; wherein the second light absorption layer comprises a plurality of vertical regions and a horizontal region, each vertical region is located between two adjacent insulating layers, and the horizontal region is located above the stacked solar cell; further comprising a third carrier transport layer, the upper surface of the third carrier transport layer is in contact with the lower surface of the horizontal region, and the lower surface of the third carrier transport layer is in contact with the upper surface of the first carrier transport layer; the carrier types of the first carrier transport layer and the second carrier transport layer are the same; the carrier types of the first carrier transport layer and the third carrier transport layer are opposite.

[0007] Optionally, the first cell further comprises a fourth carrier transport layer arranged between the first light absorption layer and the first electrode layer, and the carrier type of the fourth carrier transport layer is opposite to that of the first carrier transport layer.

[0008] Optionally, the second cell further comprises a conductive layer arranged between the second carrier transport layer and the second electrode layer.

[0009] Optionally, the material of the first light absorption layer is one of the following: crystalline silicon, perovskite, CdTe, CIGS, GaAs and organic semiconductor.

[0010] Optionally, the material of the second light absorption layer is one of the following: crystalline silicon, perovskite, CdTe, CIGS, GaAs and organic semiconductor.

[0011] Optionally, the first carrier transport layer is an n-type carrier transport layer, and the second carrier transport layer is a p-type carrier transport layer; or the first carrier transport layer is a p-type carrier transport layer, and the second carrier transport layer is an n-type carrier transport layer.

[0012] Optionally, the material of the n-type carrier transport layer comprises one or more of the following: n-type single crystal silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, Nb x O yGZO, IZO, FTO, ITO, BaSnO3, TiSnO x SnZnO x and fullerene and derivatives.

[0013] Optionally, the material of the p-type carrier transport layer comprises one or more of: p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2PACz, MeO-2PACz, Me-4PACz, benzoic acid, MC-43, Sprio-OMeTAD, PTAA, P3HT, PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, ATO, NiO x CuSCN, CuAlO2, V2O5, CdS and CdSe.

[0014] Optionally, the thickness of the first carrier transport layer is 0nm-100μm and / or the thickness of the second carrier transport layer is 0nm-100μm.

[0015] Optionally, the thickness of the first light absorption layer is 10nm-250μm and the band gap is 0.4eV-3.0eV; the thickness of the second light absorption layer is 300nm-300μm and the band gap is 0.9eV-3.0eV.

[0016] Optionally, the material of the insulating layer comprises one of: SiO2, Al2O3, SiN x PMMA, EVA and POE.

[0017] Optionally, the width of the insulating layer is 3nm-100μm.

[0018] In a second aspect, the present application provides a method for preparing a stacked solar cell, comprising: sequentially preparing an electrode layer, a first light absorption layer, a first carrier transport layer and a third carrier transport layer on a substrate; etching a first region, the upper surface of the first region to the upper surface of the third carrier transport layer, the lower surface of the first region to the upper surface of the substrate; depositing an insulating material in the first region to form an insulating layer; etching a second region, the second region being located on the left side of the insulating layer, and the upper surface of the second region to the upper surface of the third carrier transport layer, the lower surface of the second region to the upper surface of the electrode layer; preparing a second carrier transport layer in the second region, and depositing a light absorption material on the second carrier transport layer to form a second light absorption layer, the second light absorption layer comprising a vertical region between the insulating layers and a horizontal region above the stacked solar cell.

[0019] Optionally, in the step of preparing the electrode layer, the first light absorption layer, the first carrier transport layer and the third carrier transport layer on the substrate in sequence, further comprising: preparing a fourth carrier transport layer between the substrate and the first light absorption layer.

[0020] Optionally, before preparing the second carrier transport layer in the second region, further comprising: preparing a conductive layer in the second region.

[0021] Optionally, the electrode layer under the first light absorption layer is prepared into a first metal electrode, and the electrode layer under the second light absorption layer is prepared into a second metal electrode.

[0022] Optionally, a passivation layer and an anti-reflection layer are prepared in sequence on the horizontal region of the second light absorption layer.

[0023] Compared with the prior art, the present application has the following advantages: the upper surface of the solar cell (i.e. the second cell upper surface) is free of TCO, silver grid lines and other structures, which improves the light transmission effect, reduces optical loss and improves the power generation efficiency. The second cell upper surface is free of metal electrodes, which avoids the diffusion of metal in the functional layer and the contact with the top cell, greatly improving the stability of the top cell. The second cell does not need a metallization process after preparation, which reduces the difficulty of metallization and avoids the damage to the top cell caused by the metallization process. The passivation of the second cell upper surface does not need to consider the transport capacity of the carriers, which greatly widens the selection space of the passivation material on the upper surface.

[0024] SUMMARY

[0025] The above and other features, properties, and advantages of the present application will become more apparent by examining the following description in conjunction with the accompanying drawings and examples, in which:

[0026] Fig. 1 is a schematic structural diagram of a stacked solar cell according to an embodiment of the present application;

[0027] Fig. 2 is a schematic structural diagram of a stacked solar cell according to another embodiment of the present application;

[0028] Fig. 3 is a schematic structural diagram of a stacked solar cell according to another embodiment of the present application;

[0029] Fig. 4 is a schematic structural diagram of a stacked solar cell according to another embodiment of the present application;

[0030] Fig. 5 is a flowchart of a preparation method of a stacked solar cell according to an embodiment of the present application;

[0031] Fig. 6 is a diagram showing the etching region in the preparation process of a preparation method of a stacked solar cell according to an embodiment of the present application.

[0032] In Fig. 1 and Fig. 2, the hollow arrows indicate the light entrance surface.

[0033] Figure label:

[0034] 100 - First Battery;

[0035] 101 - First electrode layer, 102 - First light absorption layer;

[0036] 200 - Second battery;

[0037] 201 - Second electrode layer, 202 - Second light absorption layer, 203 - Conductive layer;

[0038] 2021 - Vertical area; 2022 - Horizontal area;

[0039] 301 - First carrier transport layer, 302 - Second carrier transport layer, 303 - Third carrier transport layer, 304 - Fourth carrier transport layer;

[0040] 400 - Insulation layer;

[0041] 500-substrate;

[0042] 601 - First metal electrode, 602 - Second metal electrode;

[0043] 700-passivation layer;

[0044] 800 - Anti-reflective layer;

[0045] 901 - Zone 1, 902 - Zone 2, 903 - Zone 3.

[0046] Preferred embodiments of the present invention

[0047] The present invention will be further described below with reference to specific embodiments and accompanying drawings. More details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention can obviously be implemented in many other ways different from those described herein. Those skilled in the art can make similar extensions and derivations based on actual applications without departing from the spirit of the present invention. Therefore, the scope of protection of the present invention should not be limited by the content of these specific embodiments.

[0048] For example, if the first feature, subsequently described in the specification, is formed above or on the second feature, this can include embodiments where the first and second features are formed in a direct connection, or embodiments where an additional feature is formed between the first and second features, so that the first and second features are not directly connected. Furthermore, when the first element is described in a manner connected or combined with the second element, the description includes embodiments where the first and second elements are directly connected or combined with each other, as well as embodiments where one or more other intervening elements are incorporated to indirectly connect or combine the first and second elements with each other.

[0049] Although the present application is disclosed with preferred embodiments, it is not intended to limit the present application, any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present application. Therefore, any modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application, which does not deviate from the technical solution of the present application, falls within the protection scope defined by the claims of the present application.

[0050] Referring to FIGS. 1-4, an embodiment of the present application is a laminated solar cell, which mainly comprises: a plurality of insulating layers 400, a first cell 100 (or a bottom cell) and a second cell 200 (or a top cell). The plurality of insulating layers 400 are arranged in sequence and used to separate at least a first light absorbing layer 102 of the first cell 100 and a second light absorbing layer 202 of the second cell 200. A first electrode layer 101, the first light absorbing layer 102, and a first carrier transport layer 301 are sequentially arranged from bottom to top on the right side of each insulating layer 400. A second electrode layer 201, a second carrier transport layer 302, and a second light absorbing layer 202 are sequentially arranged from bottom to top on the left side of each insulating layer 400. The second light absorbing layer 202 comprises a plurality of vertical regions 2021 and a horizontal region 2022. Each vertical region 2021 is located between two adjacent insulating layers 400, and the horizontal region 2022 is located above the laminated solar cell. The solar cell of the present embodiment further comprises a third carrier transport layer 303, the upper surface of the third carrier transport layer 303 is in contact with the lower surface of the horizontal region 2022, and the lower surface of the third carrier transport layer 303 is in contact with the upper surface of the first carrier transport layer 301. The carrier types of the first carrier transport layer 301 and the second carrier transport layer 302 are the same, and the carrier types of the first carrier transport layer 301 and the third carrier transport layer 303 are opposite.

[0051] Based on the above laminated solar cell structure, since the upper surface of the solar cell (i.e. the upper surface of the second cell 200) is free of TCO (transparent conductive oxide), metal grid lines (such as silver grid lines) and other structures, it will not block sunlight, thereby greatly improving the light transmission effect of the cell, reducing optical loss, and improving power generation efficiency. For example, when the first light absorbing layer 102 is crystalline silicon and the second light absorbing layer 202 is perovskite, compared with conventional laminated solar cells, the power generation efficiency and stability of the crystalline silicon / perovskite laminated solar cell can be significantly improved, and the metallization difficulty of the perovskite / crystalline silicon laminated solar cell can be reduced. In addition, the novel solar cell structure of the present embodiment can also be applied to perovskite / perovskite laminated cells, perovskite / copper indium gallium selenide laminated cells, perovskite / organic laminated cells, perovskite / cadmium telluride laminated cells, perovskite / gallium arsenide laminated cells, gallium arsenide / gallium arsenide laminated cells and other various two-terminal laminated cells.

[0052] In an example, the first battery 100 further comprises a fourth carrier transport layer 304 disposed between the first light absorption layer 102 and the first electrode layer 101, the fourth carrier transport layer 304 being opposite to the first carrier transport layer 301 in carrier type.

[0053] In the present embodiment, the lower surface of the first light absorption layer 102 can have the fourth carrier transport layer 304 (as shown in FIG. 3) or can not have the fourth carrier transport layer 304, i.e., the first light absorption layer 102 directly contacts the first electrode layer 101 (as shown in FIG. 4). The reason why the first battery 100 of the present embodiment has the two different battery structures is that the material of the first light absorption layer 102 is different. For example, if the first light absorption layer 102 is crystalline silicon, it is necessary to have an electron transport layer and a hole transport layer on the upper and lower sides of the crystalline silicon, respectively, so that the generated electrons and holes can be effectively transported. If the first light absorption layer 102 is CIGS (copper indium gallium selenide), since CIGS itself has strong hole transport capability, it is only necessary to have an electron transport layer on one surface (the upper surface of the first light absorption layer 102 in FIG. 4) of the CIGS, and it is not necessary to prepare a hole transport layer on the other surface (the lower surface of the first light absorption layer 102 in FIG. 4). At this time, the first light absorption layer 102 directly contacts the first electrode layer 101.

[0054] In an example, the second battery 200 further comprises a conductive layer 203 disposed between the second carrier transport layer 302 and the second electrode layer 201.

[0055] In the present embodiment, the upper surface of the second electrode layer 201 is usually the second carrier transport layer 302 (as shown in FIG. 3), but this structure makes it difficult to prepare the second carrier transport layer 302 at this position. Therefore, a conductive layer 203 (as shown in FIG. 4) can be deposited before the second carrier transport layer 302 is prepared, so that the second carrier transport layer 302 can be prepared by a simple process, and the conductive layer 203 and the second electrode layer 201 jointly play a conductive role.

[0056] In an example, the material of the first light absorption layer 102 is one of crystalline silicon, perovskite, CdTe, CIGS, GaAs and organic semiconductor, and the present embodiment preferably uses crystalline silicon and CIGS.

[0057] In an example, the material of the second light absorption layer 202 is one of crystalline silicon, perovskite, CdTe, CIGS, GaAs and organic semiconductor, and the present embodiment preferably uses perovskite.

[0058] The perovskite has a three-dimensional structure ABX3, A is a monovalent cation, including one or a mixture of several monovalent cations selected from cesium (Cs), rubidium (Rb), methylamine (CH3NH3), formamidinium (CH2(NH2)2); B is a divalent cation, including one or a mixture of several divalent cations selected from lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), calcium (Ca); X is a monovalent anion, including one or a mixture of several monovalent anions selected from iodine (I), bromine (Br), chlorine (Cl), fluorine (F), thiocyanate ion (SCN). It should be understood that those skilled in the art can make corresponding adjustments to the content of each part of the above compound according to actual needs, and the present embodiment does not specifically limit this.

[0059] In the present embodiment, the light absorption layer (second light absorption layer 202) of the second battery 200 and the light absorption layer (first light absorption layer 102) of the first battery 100 generally use different light absorption materials, so that the stacked solar cell can most fully utilize each wave band of the solar spectrum, realize spectral complementation, and fully absorb sunlight. For example, the light absorption layer of the second battery 200 selects a perovskite material with a wide band gap, and the light absorption layer of the first battery 100 selects a GIGS material with a narrow band gap. Through the combination of the band gaps of the different materials of the first battery 100 and the second battery 200, the overall absorption of the solar spectrum is realized, and the energy conversion efficiency is improved.

[0060] In an example, the first carrier transport layer 301 is an n-type carrier transport layer, and the second carrier transport layer 302 is a p-type carrier transport layer; or the first carrier transport layer 301 is a p-type carrier transport layer, and the second carrier transport layer 302 is an n-type carrier transport layer.

[0061] Referring to FIG. 1, in the second battery 200, the transport layer below the second light absorption layer 202 is an n-type carrier transport layer, and in the first battery 100, the transport layers from top to bottom are a p-type carrier transport layer, an n-type carrier transport layer, and a p-type carrier transport layer. Referring to FIG. 2, unlike FIG. 1, in the second battery 200, the transport layer below the second light absorption layer 202 is a p-type carrier transport layer, and in the first battery 100, the transport layers from top to bottom are an n-type carrier transport layer, a p-type carrier transport layer, and an n-type carrier transport layer. Both the two types of carrier transport layer arrangements shown in FIG. 1 and FIG. 2 can meet the structural requirements of the stacked solar cell of the present embodiment.

[0062] In an example, the material of the n-type carrier transport layer includes one or more of the following: n-type single crystal silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, Nb x O yGZO (gallium-doped zinc oxide), IZO (indium zinc oxide), FTO (fluorine-doped tin oxide), ITO (indium tin oxide), BaSnO3, TiSnO x , SnZnO x , fullerene and derivatives (C60, C70, PCBM).

[0063] In an example, the thickness of the n-type carrier transport layer is 0 nm to 100 μm. Referring to FIG. 1, in the present embodiment, the thickness direction is the vertical direction (Y direction), and the width direction is the horizontal direction (X direction).

[0064] In an example, the material of the p-type carrier transport layer includes one or more of the following: p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, single-molecule self-assembly materials, including [2-(9H-carbazol-9-yl)ethyl] phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz), benzoic acid, 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid [MC-43], etc., Sprio-OMeTAD (2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PTAA (polyethylene terephthalate), P3HT (polymer of 3-hexylthiophene), PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, ATO, NiO x , CuSCN, CuAlO2, V2O5, CdS, CdSe.

[0065] In an example, the thickness of the p-type carrier transport layer is 0 nm to 1000 nm.

[0066] It can be understood that the same type of carriers in each transport layer does not mean that the same material needs to be selected. For example, in the first battery 100, p-type polycrystalline silicon can be selected, and in the second battery 200, NiO x , different transport layer materials are selected, which does not affect the type of carriers and the functions they achieve. Therefore, when selecting a specific transport layer material, it can be determined comprehensively according to factors such as battery performance, preparation requirements, cost, etc.

[0067] In an example, the first light absorption layer 102 has a thickness of 10 nm to 250 μm and a band gap of 0.4 eV to 3.0 eV, and the second light absorption layer 202 has a thickness (including the vertical region 2021 and the horizontal region 2022) of 300 nm to 300 μm and a band gap of 0.9 eV to 3.0 eV. The embodiment improves the light absorption efficiency and the energy conversion efficiency by the band gap combination of different materials.

[0068] In an example, the material of the insulating layer 400 includes one of SiO2, Al2O3, SiN x and PMMA (polymethyl methacrylate), EVA (ethylene-vinyl acetate copolymer), POE (polyolefin elastomer), and other organic materials.

[0069] In an example, the width of the insulating layer 400 is 3 nm to 100 μm.

[0070] The stacked solar cell provided by the embodiment has no TCO, silver grid line, and other structures on the upper surface, improves the light transmission effect, reduces the optical loss, and improves the power generation efficiency. The second cell 200 has no metal electrode on the upper surface, avoids the diffusion of metal in the functional layer and the contact with the top cell, and greatly improves the stability of the top cell. The second cell 200 does not need a metallization process after preparation, reduces the difficulty of metallization, and does not damage the top cell in the metallization process. The passivation of the upper surface of the second cell 200 does not need to consider the transport capacity of the carriers, greatly widens the selection space of the passivation material on the upper surface.

[0071] Referring to FIG. 5, another embodiment of the present application provides a preparation method of a stacked solar cell, mainly including: S510, sequentially preparing an electrode layer, a first light absorption layer, a first carrier transport layer, and a third carrier transport layer on a substrate; S520, etching a first region, the upper surface of the first region to the upper surface of the third carrier transport layer, and the lower surface of the first region to the upper surface of the substrate; S530, depositing an insulating material in the first region to form an insulating layer; S540, etching a second region, the second region being located on the left side of the insulating layer, and the upper surface of the second region to the upper surface of the third carrier transport layer, and the lower surface of the second region to the upper surface of the electrode layer; S550, preparing a second carrier transport layer in the second region, and depositing a light absorption material above the second carrier transport layer to form a second light absorption layer, the second light absorption layer including a vertical region between the insulating layers and a horizontal region above the stacked solar cell.

[0072] Referring to FIG. 6, in the embodiment, the first region 901 is the region where the insulating layer is finally formed, the second region 902 is the region where the second cell 200 is finally formed, and the third region 903 is the region where the first cell 100 is formed. It can be seen that the whole prepared laminated solar cell in the embodiment is a top cell + bottom cell structure, but different from the conventional laminated solar cell, a part of the light absorbing layer of the top cell is arranged staggeredly with the underlying bottom cell, and at the same time, only the light absorbing layer of the top cell is on the top of the whole laminated solar cell. Therefore, the upper surface of the laminated solar cell (i.e. the upper surface of the top cell) is free of TCO, metal grid lines and other structures, which can improve the light transmission effect, reduce optical loss and improve the power generation efficiency.

[0073] In an example, in the step of sequentially preparing the electrode layer, the first light absorbing layer, the first carrier transport layer and the third carrier transport layer on the substrate, the method further comprises: preparing a fourth carrier transport layer between the substrate and the first light absorbing layer.

[0074] In the embodiment, the lower surface of the first light absorbing layer can have the first carrier transport layer or can not have the first carrier transport layer, i.e. the first light absorbing layer directly contacts the first electrode layer, which is due to the different materials of the selected first light absorbing layer.

[0075] In an example, before preparing the second carrier transport layer in the second region 902, the method further comprises: preparing a conductive layer in the second region 902.

[0076] Before preparing the second carrier transport layer, a conductive layer is deposited first, and then the second carrier transport layer is prepared by using a simple process. The conductive layer and the second electrode layer jointly play the role of conducting electricity.

[0077] In an example, the first metal electrode is prepared on the electrode layer under the first light absorbing layer, and the second metal electrode is prepared on the electrode layer under the second light absorbing layer. The first metal electrode and the second metal electrode are both under the prepared laminated solar cell, and the upper surface of the laminated solar cell is free of TCO (transparent conductive oxide), metal grid lines (such as silver grid lines) and other structures, which will not block sunlight and can greatly improve the light transmission effect of the cell.

[0078] In an example, the passivation layer and the anti-reflection layer are sequentially prepared on the horizontal region of the second light absorbing layer.

[0079] In order to further demonstrate the preparation method of the laminated solar cell in the embodiment and the laminated solar cell prepared by the method, the following two specific preparation processes of the laminated solar cell are described.

[0080] Experimental Example 1: The laminated solar cell with the structure shown in FIG. 3 is prepared by using the preparation method of the laminated solar cell in the embodiment, and the specific process is as follows:

[0081] 1. Prepare PSS: PEDOT layer on glass (substrate) and ITO (electrode layer), then prepare FAPb 0.5 Sn 0.5 I3 perovskite material layer, after preparation, evaporate C60 material on the whole and grow ALD-SnO2 above, then sputter ITO material layer, and prepare 2-(9H-carbazole-9-yl) ethyl] phosphonic acid (2PACz) material layer on the surface of ITO by spin coating method.

[0082] 2. Perform laser lithography on the first area 901, etch to the bottom glass upper surface, and completely etch the remaining layers. The shape of the etched first area 901 is shown in FIG. 6, the channel width of laser lithography is 1 μm, then cover the mask, and deposit SiO2 in the channel by PVD method to completely cover the channel edge to form an insulating layer.

[0083] 3. Etch the second area 902 as shown in FIG. 6 to the ITO layer by laser, the width of each rectangle in the second area 902 is 15 μm, and then sputter SnO2 layer as an electron transport layer in the second area 902 by RPD method.

[0084] 4. Spin-coat wide bandgap perovskite FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 material on the substrate after step 3, and anneal at 100℃ for 15 min to form a second light absorption layer.

[0085] 5. Prepare 30 nm thickness of ALD-Al2O3 as a passivation layer on the surface of the formed wide bandgap perovskite material, and then hot evaporate 200 nm MgF2 as an anti-reflection layer.

[0086] 6. Evaporate Cu electrode to lead out the second area 902 and the third area 903 through the metal electrode.

[0087] The efficiencies of perovskite / perovskite tandem battery devices with different structures are shown in Table 1, and Comparative Example 1 is a perovskite / perovskite tandem battery with a conventional structure, wherein VOC represents open circuit voltage, JSC represents short circuit current density, FF represents fill factor, and PCE represents photoelectric conversion efficiency.

[0088] Table 1 Efficiency table of perovskite / perovskite tandem battery devices with different structures

[0089] Experimental Example 2: The tandem solar cell with the structure shown in FIG. 4 is prepared by using the tandem solar cell preparation method of the present embodiment, and the details are as follows:

[0090] 1. A CIGS layer is prepared on a glass (substrate) and Mo electrode layer, the CIGS layer has a thickness of 2 μm, then a CdS layer is prepared on the CIGS layer, after the preparation, a BZO material layer is grown by a CVD method, and a 2-(9H-carbazol-9-yl)ethyl] phosphonic acid (2PACz) material layer is prepared on the surface of the BZO layer by a spin coating method.

[0091] 2. A laser lithography method is used to perform lithography on the first region 901, etching to the upper surface of the glass, and the remaining layers are completely etched, the shape of the etched first region 901 is shown in Figure 6, the channel width of the laser lithography is 1 μm, then a mask plate is covered, and SiO2 is deposited in the channel by a PVD method to completely cover the edge of the channel, forming an insulating layer.

[0092] 3. The second region 902 as shown in Figure 6 is etched to the Mo electrode layer by laser, the width of each rectangle in the second region 902 is 15 μm, and then an ITO layer and a SnO2 layer of an electron transport layer are sputtered in the second region 902 by an RPD method.

[0093] 4. A wide bandgap perovskite FA 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 )3 material is spin-coated on the substrate after the completion of the above step 3, and annealed at 100°C for 15 min, forming a second light absorption layer.

[0094] 5. An ALD-Al2O3 layer is prepared as a passivation layer on the surface of the formed wide bandgap perovskite material, having a thickness of 30 nm, and a 200 nm MgF2 layer is prepared as an anti-reflection layer by thermal evaporation.

[0095] The efficiencies of perovskite / CIGS tandem cell devices with different structures are shown in Table 2, and Comparative Example 2 is a conventional perovskite / CIGS tandem cell, wherein VOC represents open circuit voltage, JSC represents short circuit current density, FF represents fill factor, and PCE represents photoelectric conversion efficiency.

[0096] Table 2 Efficiency table of perovskite / CIGS tandem cell devices with different structures

[0097] The preparation method of the embodiment can be used to prepare the tandem solar cell of the foregoing embodiment, and the structure of the prepared tandem solar cell can refer to the foregoing embodiment, which is not expanded here.

[0098] The preparation method of the laminated solar cell provided by the embodiment has no TCO and silver grid line structure on the upper surface of the cell, improves the light transmission effect, reduces optical loss, and improves the power generation efficiency. The upper surface of the second cell has no metal electrode, which avoids the diffusion of metal in the functional layer and the contact with the top cell, greatly improving the stability of the top cell. The second cell does not need a metallization process after preparation, reducing the difficulty of metallization, and the metallization process does not damage the top cell. The passivation of the upper surface of the second cell does not need to consider the transport capacity of the carriers, greatly widening the selection space of the passivation material on the upper surface.

[0099] The foregoing merely illustrates the principles of the application. Furthermore, those skilled in the art will readily recognize that various modifications, changes, and substitutions can be undertaken to the concepts disclosed herein without materially departing from the application. Accordingly, all such modifications, changes, and substitutions are intended to be included within the spirit and scope of the application as recited in the following claims.

Claims

1. A stacked solar cell, characterized by, The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell.

2. The tandem solar cell of claim 1, wherein The application relates to a stacked solar cell.

3. The tandem solar cell of claim 1, wherein The application relates to a stacked solar cell.

4. The tandem solar cell of claim 1, wherein, The application relates to a stacked solar cell.

5. The tandem solar cell of claim 1, wherein The application relates to a stacked solar cell.

6. The tandem solar cell according to claim 1 or 2, wherein The application relates to a stacked solar cell.

7. The tandem solar cell of claim 6, wherein, The material of the n-type carrier transport layer includes one or more of n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, Nb x O y , GZO, IZO, FTO, ITO, BaSnO3, TiSnO x , SnZnO x , and fullerene and derivatives.

8. The tandem solar cell of claim 6, wherein, The material of the p-type carrier transport layer includes one or more of: p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2PACz, MeO-2PACz, Me-4PACz, benzoic acid, MC-43, Sprio-OMeTAD, PTAA, P3HT, PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, ATO, NiO x , CuSCN, CuAlO2, V2O5, CdS, and CdSe.

9. The tandem solar cell of claim 1, wherein, The application relates to a stacked solar cell.

10. The tandem solar cell of claim 1, wherein, The application relates to a stacked solar cell.

11. The tandem solar cell of claim 1, wherein, The material of the insulation layer comprises one of SiO2, Al2O3, SiN x , PMMA, EVA and POE.

12. The tandem solar cell of claim 1, wherein, The application relates to a stacked solar cell.

13. A method of fabricating a stacked solar cell, characterized by, The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. The application relates to a stacked solar cell. 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The application relates to a A second carrier transport layer is prepared in the second region, and a light-absorbing material is deposited on the second carrier transport layer to form a second light-absorbing layer, which includes vertical regions between the insulating layers and a horizontal region above the stacked solar cell.

14. The method of producing a stacked solar cell according to claim 13, wherein In the step of sequentially preparing an electrode layer, a first light-absorbing layer, a first carrier transport layer, and a third carrier transport layer on a substrate, a fourth carrier transport layer is further prepared between the substrate and the first light-absorbing layer.

15. The method of claim 13, wherein the step of forming the stack of solar cells is performed by a process selected from the group consisting of sputtering, evaporation, and chemical vapor deposition. Before the second carrier transport layer is prepared in the second region, a conductive layer is further prepared in the second region.

16. The method of producing a stacked solar cell according to claim 13, wherein A first metal electrode is prepared on the electrode layer below the first light-absorbing layer, and a second metal electrode is prepared on the electrode layer below the second light-absorbing layer.

17. The method of producing a tandem solar cell according to any one of claims 13 to 16, wherein Further comprising: A passivation layer and an anti-reflection layer are sequentially prepared on the horizontal region of the second light-absorbing layer. A passivation layer and an anti-reflection layer are sequentially prepared on the horizontal region of the second light-absorbing layer.

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