Optoelectronic assembly and method for operating an optoelectronic assembly

Abstract

The invention relates to an optoelectronic assembly (100) having a carrier substrate (10), at least one semiconductor component (20) which is provided on the carrier substrate (10) and is configured to emit electromagnetic radiation during operation, and at least one strain gauge structure (40) which is provided on the carrier substrate (10), is formed by at least one conductor track (30) provided on the carrier substrate (10), and is configured to detect a pressure exerted by touching the strain gauge structure (40).

Description

[0001] OPTOELECTRONIC ARRANGEMENT AND METHOD FOR OPERATING AN OPTOELECTRONIC ARRANGEMENT

[0002] DESCRIPTION

[0003] Display devices, such as those used in the automotive or consumer electronics sectors, can be implemented using so-called micro-light-emitting diodes (LEDs or micro-LEDs) mounted on a thin, flexible, and transparent substrate and connected via metallic conductors. This "LED-on-film" configuration allows the micro-LEDs to be freely arranged in arbitrarily shaped, individually controllable segments, thus enabling customized, segment-based surface illumination. For example, standard lighting functions such as brake lights or turn signals can be provided, but unique, application-specific shapes and animation effects are also possible.

[0004] To provide user input on such a thin, illuminated display element, sensors are also needed that respond to touch, movement, or physical pressure, thus providing "force touch / 3D touch" functionality. To avoid erroneous inputs or to distinguish between a light touch and firm pressure, the strength of a pressure event can be taken into account.

[0005] In addition to the display element, an extra component is required to measure the intensity of the pressure event. For example, a piezoelectric crystal, or in particular a strain gauge, can be used, which is evaluated separately. However, this leads to a large number of additional elements that must be integrated onto the display element. The present invention aims to provide an improved optoelectronic arrangement.

[0006] According to the implementation forms, the problem is solved by the subject matter of the independent patent claims. Further developments are defined in the dependent patent claims.

[0007] SUMMARY

[0008] An optoelectronic arrangement according to embodiments comprises a substrate, at least one semiconductor device arranged on the substrate which is configured to emit electromagnetic radiation during operation, at least one strain gauge structure arranged on the substrate which is formed by at least one conductor track arranged on the substrate and which is configured to detect a pressure exerted by contact with the strain gauge structure.

[0009] This arrangement makes it possible to locally integrate a strain gauge structure into the substrate. Using the conductor track as a strain gauge structure allows for process savings and a reduction in additional components and conductor tracks. Furthermore, it enables a reduction in the thickness of the substrate layer.

[0010] The strain gauge structure can exhibit an electrical resistance that can be changed by touch. This change in resistance can be generated and detected by a mechanical deformation of the conductor track.

[0011] The optoelectronic arrangement can further include a processing unit mounted on the substrate. This processing unit can be used, for example, to determine the change in resistance. From this, the applied pressure can then be determined.

[0012] Furthermore, the optoelectronic arrangement can include a connecting conductor track arranged on the substrate, which supplies the semiconductor device with electrical energy.

[0013] According to further embodiments, the strain gauge structure and the semiconductor device can be arranged on opposite sides of the substrate.

[0014] Likewise, the conductor track forming the strain gauge structure can also be designed as a connecting conductor track that provides electrical energy.

[0015] By using current-carrying conductors as strain gauge structures, additional conductor tracks can be eliminated and more space created. This allows for greater design freedom.

[0016] For example, the conductor track designed as a connecting conductor track can supply the semiconductor component with electrical energy.

[0017] The optoelectronic arrangement may also include further semiconductor components arranged on the substrate, which may be arranged within the strain gauge structure and are electrically connected in series via the connecting conductor track.

[0018] Furthermore, the strain gauge structure can detect touch, for example, from the finger of a person operating the optoelectronic device. For this purpose, the strain gauge structure can have an electrical capacitance that changes upon contact. This change in capacitance can be detected by a change in the signal in the conductor.

[0019] Thus, it is possible, for example, to simultaneously capture capacitive (touch-sensitive) as well as resistive (pressure-sensitive) inputs.

[0020] It is also possible that the optoelectronic arrangement includes a further detection structure arranged on the substrate, which is formed by a detection conductor track arranged on the substrate and which detects the touch.

[0021] The detection structure and the strain gauge structure can overlap at least partially.

[0022] Furthermore, within the strain gauge structure and the detection structure, the detection conductor track can be interlocked with the conductor track in a comb-like manner.

[0023] The optoelectronic arrangement can further comprise a first substrate that is different from the support substrate, is arranged above the support substrate and has a material that is at least partially elastically modifiable.

[0024] This can, for example, enable sufficient elongation of the strain gauge structure and the support substrate.

[0025] According to further embodiments, the optoelectronic arrangement can also have a second substrate on a side of the support substrate facing away from the first substrate, and a second support substrate arranged on this second substrate, which comprises at least one further strain gauge structure.

[0026] Using this stacked arrangement, for example, different pressure intensities exerted by the finger can be determined more accurately.

[0027] The optoelectronic arrangement can further comprise a second strain gauge structure mounted on the substrate, formed by at least one additional conductor track mounted on the substrate. The second strain gauge structure can serve as a reference for temperature compensation.

[0028] The first substrate can, for example, be rigid at the position that corresponds to the further strain gauge structure.

[0029] According to further implementation methods, based on the stacked arrangement of substrates described above, the first substrate can be rigid and the first support substrate can serve as a reference for temperature compensation.

[0030] The carrier substrate can be transparent.

[0031] The above problem is also solved by a method for operating the optoelectronic arrangement. According to its implementation forms, the method has the following features.

[0032] In operation S 110, a time-modulated control signal is applied via a conductor track to at least one semiconductor device to generate electromagnetic radiation. In operation S 120, pressure exerted by a touch is detected and measured using the strain gauge structure. The strain gauge structure, formed by at least one conductor track, has an electrical resistance that changes upon contact. This change in resistance is generated and detected by a mechanical deformation of the conductor track.

[0033] The method can also include detecting contact with the strain gauge structure, which furthermore has an electrical capacitance that changes upon contact. The change in capacitance can be detected, as described above, for example, by a change in the signal in the conductor track.

[0034] Furthermore, the method can include a detection of contact with the detection structure formed by the detection conductor track, which is capable of detecting the contact.

[0035] BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings serve to illustrate exemplary embodiments of the invention. The drawings depict these embodiments and, together with the description, serve to explain them. Further exemplary embodiments and many of the intended advantages will become apparent from the detailed description below. The elements and structures shown in the drawings are not necessarily drawn to scale. Identical reference symbols refer to identical or corresponding elements and structures.

[0037] Fig. 1A shows a schematic top view of an optoelectronic arrangement according to the embodiments. Fig. 1B shows a schematic side view of the optoelectronic arrangement according to the embodiments.

[0038] Fig. IC shows a schematic cross-sectional view of the optoelectronic arrangement according to the implementation forms.

[0039] Fig. ID shows a schematic representation of the optoelectronic arrangement in a side view according to further embodiments.

[0040] Fig. 2A shows a schematic top view of an optoelectronic arrangement according to further embodiments.

[0041] Fig. 2B shows a schematic cross-sectional view of the optoelectronic arrangement according to further embodiments.

[0042] Fig. 3A shows a schematic top view of an optoelectronic arrangement according to further embodiments.

[0043] Fig. 3B shows a schematic top view of an optoelectronic arrangement according to further embodiments.

[0044] Fig. 4 shows a schematic top view of an optoelectronic arrangement according to further embodiments.

[0045] Fig. 5 shows a schematic representation of an optoelectronic arrangement in a side view according to further embodiments. Fig. 6 shows a schematic representation of an optoelectronic arrangement in a top view according to further embodiments.

[0046] Fig. 7 shows a schematic sequence of a method for operating the optoelectronic arrangement according to embodiments.

[0047] DE TAIL LBE SCHRE I BUNG

[0048] The following detailed description refers to the accompanying drawings, which form part of the disclosure and show specific embodiments for illustrative purposes. In this context, directional terminology such as "top," "bottom," "front," "back," "over," "on," "in front," "behind," "front," "back," etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology serves only for explanation and is in no way restrictive.

[0049] The description of the exemplary embodiments is not limiting, as other exemplary embodiments exist and structural or logical modifications can be made without deviating from the scope defined by the patent claims. In particular, elements of the exemplary embodiments described below can be combined with elements of other described exemplary embodiments, unless otherwise indicated by the context.

[0050] The term "vertical," as used in this description, is intended to describe an orientation that is essentially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

[0051] The terms "lateral" and "horizontal," as used in this description, are intended to describe an orientation or alignment that is essentially parallel to a first surface of a substrate or semiconductor body. This could be, for example, the surface of a wafer or a chip (die).

[0052] The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are growing.

[0053] Fig. 1A shows a simplified schematic representation of an optoelectronic arrangement 100 according to embodiments. The optoelectronic arrangement 100 comprises a substrate 10 and at least one semiconductor device 20 arranged on the substrate 10. Furthermore, the optoelectronic arrangement 100 includes a strain gauge structure 40, which is indicated by a circle in Fig. 1A and occupies a portion of the surface of the substrate 10. This portion or measuring area of ​​the strain gauge structure 40 is, for example, limited to a local area on the substrate 10 (which may, for example, be assigned to one or more buttons). In Fig. 1A, only one semiconductor device 20 and one strain gauge structure 40 are shown. Depending on the need and requirements, further semiconductor devices 40 and strain gauge structures 40 can be provided, as will be shown later with reference to Fig. 3B, Fig.Figures 5 and 6 describe this in more detail. For example, the support substrate 10 can be made of a flexible film with a thickness of at most 1 mm. The support substrate 10 can be made of a plastic, for example polyimide, polyethylene, or polyethylene terephthalate (PET), and can be at least partially transparent to electromagnetic radiation in the visible spectral range. The optoelectronic arrangement 100 can thus be integrated as an at least partially transparent, interactive display device, for example, in a window or a windshield. The semiconductor device 20 can be configured, for example, as a pixel for displaying information in the form of an image or as part of a symbol.By means of the touch- and pressure-sensitive strain gauge structure 40, which will be described in detail later, the optoelectronic arrangement 100 can thus be used at least partially as a transparent, interactive display and control element.

[0054] Fig. 1B shows a schematic side view of the optoelectronic arrangement 100. On the left, the optoelectronic arrangement 100 is shown with a first substrate 70 and the support substrate 10 arranged thereon, which comprises the strain gauge structure 40. The first substrate 70 is made of an elastically modifiable (e.g., deformable) material and is described in more detail with reference to Fig. 5. A finger F is assigned to a person operating the optoelectronic arrangement. On the right side of Fig. 1B, the finger F touches the optoelectronic arrangement 100 and exerts pressure, which consequently results in elongation of the support substrate 10 and the first substrate 70. The flexible substrate provided by the first substrate 70 allows for sufficient elongation of the strain gauge structure 40 and the support substrate 10. Fig.Figure ID shows a schematic representation of the optoelectronic arrangement 100 in a side view according to further embodiments. In this example, the strain gauge structure 40 is arranged between the support substrate 10 and the first substrate 70. With this arrangement as well, sufficient strain on the strain gauge structure 40 is ensured by the first substrate 70 due to the pressure exerted by the finger F (not shown in Figure ID).

[0055] The semiconductor device 20 emits electromagnetic radiation during operation, for example in a spectral range between infrared and ultraviolet light. Preferably, it emits electromagnetic radiation in the visible spectral range during operation. The semiconductor device 20 can be configured as a light-emitting diode (LED).

[0056] For example, the edge length of the semiconductor device 20 can be at most 700 pm, preferably at most 70 pm. In particular, the semiconductor device 20 can be configured as a micro-LED (micro light-emitting diode).

[0057] A micro-LED is a light-emitting diode that is particularly small in size. A micro-LED is not a laser.

[0058] In the micro-LED, for example, a growth substrate on which a semiconductor layer sequence of the micro-LED was epitaxially grown has been removed. In other words, the micro-LED has no growth substrate. The thickness or height of the micro-LED in the growth direction of the semiconductor layer sequence is, for example, between 1 pm (inclusive), 5 pm, and 10 pm (inclusive). In particular, the epitaxial semiconductor layer sequence has an active layer, for example, with the pn junction, in which the electromagnetic field is generated during operation.

[0059] Radiation is generated. The micro-LED can have various configurations of radiation emission surfaces, for example, a rectangular or other shaped radiation emission surface. In a top view of the semiconductor layer sequence, each lateral extent of the radiation emission surface can be, for example, at most 100 pm or at most 70 pm.

[0060] For example, in rectangular micro-LEDs, the edge length – especially when viewed from the surface of the semiconductor layer sequence – is at most 70 pm or at most 50 pm. Micro-LEDs are supplied, for example, on wafers with mounting structures that can be removed without damaging the micro-LED. Micro-LEDs are also referred to as pLEDs, p-LEDs, uLEDs, u-LEDs, or micro light-emitting diodes.

[0061] Electrical contacts for electrically connecting the semiconductor device 20 are, for example, oriented towards the support substrate 10. However, other configurations are also possible and are included here. Due to the at least partially transparent support substrate 10 and the compact design of the semiconductor device 20, the optoelectronic arrangement 100 described here can, for example, be integrated into a window or a windshield without significantly affecting the transparency of the window or windshield.

[0062] The strain gauge structure 40 arranged on the support substrate 100 is formed by at least one metallic conductor track 30 arranged on the support substrate 10. A pressure exerted by contact with the strain gauge structure 40 is detected by means of the strain gauge structure 40.

[0063] This can affect the functionality of a strain gauge.

[0064] (locally) incorporated into the optoelectronic arrangement 100. This allows for a reduction in components / installation height / conductor traces and the creation of transparent components. Furthermore, the present application presents a novel operating mode for a combined LED display and control element with "force-touch" functionality. This can extend or complement applied touchscreen technologies with printing capabilities.

[0065] Specifically, the use of touch- and pressure-sensitive structures (such as the strain gauge structure 40), which are formed by metallic conductor tracks 30 provided on the substrate 10, can eliminate additional processes, reduce the number of components, and / or reduce the thickness of the substrate 10. In this context, intersecting conductor tracks 30 can be realized by bridging the conductor tracks 30 using conductive material. Short circuits can be prevented, for example, by insulators.

[0066] In particular, the strain gauge structure 40 can exhibit an electrical resistance that can be changed by touch. This change in resistance is generated and detected by a mechanical deformation of the conductor track 30.

[0067] For example, when the strain gauge structure 40 is touched by a finger F of a person operating the optoelectronic arrangement 100 (see, for example, Fig. 1B), the electrical resistance can change due to stretching or compression of the conductor track 30. The pressure exerted by the finger F can be determined from this change in resistance. For this purpose, the conductor track 30 can have a grid structure. For example, it can be applied to the substrate 30 in a meandering arrangement. However, the meandering arrangement is only exemplary, and different configurations of the conductor track 30 forming the strain gauge structure 40 are possible.

[0068] The pressure exerted by finger F is directly transmitted to conductor 30, resulting in a change in resistance. For example, if conductor 30 is stretched, its resistance increases; if it is compressed, its resistance decreases. In other words, the pressure of finger F is determined by the change in resistance resulting from a mechanical deformation of conductor 30, whereby the deformation caused by the pressure leads to a change in the cross-sectional area of ​​conductor 30. This, in turn, causes a change in electrical resistance.

[0069] In this context, the optoelectronic arrangement 100 can further comprise a processing unit 50 arranged on the support substrate 10, which determines the change in resistance in order to calculate the applied pressure. The evaluation of the change in resistance caused by a pressure-induced deformation can be carried out, for example, via a bridge circuit (e.g., a Wheatstone bridge).

[0070] Furthermore, an evaluation of the measured relative change in resistance compared to previously measured values ​​can allow a conclusion to be drawn about an exerted pressure, for example if the measured change is greater than a threshold value.

[0071] It is also possible to form the processing unit 50 separately from the substrate 50, i.e., as an external unit, and to connect it to the conductor track 30 by means of further contacts (not shown in Fig. 1A). Various arrangements are possible and are included herein. Furthermore, the optoelectronic arrangement 100 can have another conductor track 30, such as a connecting conductor track 30' arranged on the substrate 10, which supplies the semiconductor device 20 with electrical energy. For example, an electrical control signal (not shown in Fig. 1A) in the form of an electrical voltage can be applied to one end of the connecting conductor track 30', while the other end of the connecting conductor track 30' is electrically connected to ground potential.

[0072] Figure IC shows a cross-sectional view of the optoelectronic arrangement 100 (the first substrate 70 is not shown here). The cross-sectional view is taken along a line X indicated in Figure 1A and shows the conductor track 30, which forms the strain gauge structure 40, as well as the connecting conductor track 30' on which the semiconductor device 40 can be arranged (the processing unit 50 is not shown). During operation, the semiconductor device 20 can then emit electromagnetic radiation by means of the electrical energy flowing through the connecting conductor track 30'. It goes without saying that this cross-sectional view is only to be seen as an example.

[0073] According to another embodiment, the strain gauge structure 40 and the semiconductor device 20 can also be arranged on opposite sides of the support substrate 10.

[0074] This is illustrated, for example, in Fig. 2A, where the strain gauge structure 40 is indicated by a dashed circle on the opposite side of the substrate 10. The conductor track 30 forming the strain gauge structure 30 and the processing unit 50 are also shown as dashed lines. Fig. 2B shows a cross-sectional view along a line X, which is indicated in Fig. 2A. In the example shown in Figures 2A and 2B, the semiconductor device 20 is located in a position opposite the strain gauge structure 40. However, this is only an example, and the semiconductor device 20 can be arranged in different positions on the side of the substrate 10 opposite the strain gauge structure 40. Likewise, the processing unit 50 (not shown in Fig. 2B) can be arranged at different positions on the carrier substrate 10.

[0075] In another embodiment, the conductor 30 forming the strain gauge structure 40 can also be configured as a connecting conductor 30' to provide electrical energy. In other words, the conductor 30 can serve as a current-carrying conductor that supplies current to other elements (not shown in Fig. 1A).

[0076] Figure 3A shows a simplified schematic representation of the optoelectronic arrangement 100, in which the conductor 30 forming the strain gauge structure 40 is designed as a current-carrying conductor. In this and the following examples, the strain gauge structure 40 is arranged on the same side of the substrate 10 as the semiconductor device 20.

[0077] The conductor track 30, designed as a connecting conductor track 30', can supply the semiconductor component 20 with electrical energy. By using current-carrying conductors as touch-sensitive or pressure-sensitive structures (such as the strain gauge structure 40), it is possible to eliminate additional conductor tracks 30. This frees up more space on the substrate 10, allowing for greater design freedom. Smaller connectors with a reduced number of pins can also be used for connection to control electronics.

[0078] In the example shown in Fig. 3B, several semiconductor devices 20 are illustrated. The additional semiconductor devices 20 arranged on the support substrate 10 can be arranged within the strain gauge structure 40 and electrically connected in series via the connecting conductor 30'. The processing unit 50 can also be connected in series with the connecting conductor 30'.

[0079] The strain gauge structure 40 can also detect the touch of a finger F (not shown in Fig. 3A and Fig. 3B). For example, it can have an electrical capacitance that changes upon contact. The change in capacitance can be detected by a change in the conductor track 30. In other words, the embodiment of the strain gauge structure 40 shown in Fig. 1 can also be used for touch detection.

[0080] For example, the electrical capacitance in the conductor 30 forming the strain gauge structure 40 can change due to the touch of the finger F. The capacitance can be formed by the meandering arrangement of the conductor 30. Furthermore, the conductor 30 and the connecting conductor 30' can be electrically insulated in such a way that the touch does not cause a short circuit between these conductors.

[0081] The processing unit 50 can alternately use the resistive properties of the strain gauge structure 40 to determine the pressure and the capacitive properties of the strain gauge structure 40 to determine the contact. Likewise, the optoelectronic arrangement 100 can have a detection structure 60 arranged on the support substrate 10, which is formed by a detection conductor track 31 arranged on the support substrate 10, in order to detect the contact.

[0082] In Fig. 4 the optoelectronic arrangement 100 with such a detection structure 60 is shown, which is represented by a dotted line.

[0083] For example, the electrical capacitance between the conductor track 30, serving as the connecting conductor 30', and the detection conductor track 31 can change due to contact with the finger F (not shown in Fig. 4). Furthermore, the detection conductor track 31 and the connecting conductor track 30' can be electrically insulated in such a way that contact does not cause a short circuit between these conductors.

[0084] An electrical voltage can be induced in the detection conductor 31 by means of a time-modulated control signal in the connecting conductor 30' (not shown in Fig. 4). The electrical voltage in the detection conductor 31 can thus form a detection signal (not shown in Fig. 4). The temporal profile of the detection signal can depend, in particular, on the electrical capacitance between the detection conductor 31 and the connecting conductor 30'. A change in the temporal profile of the detection signal during contact can detect the contact.

[0085] As can be seen from Fig. 4, the detection structure 60 and the strain gauge structure 40 can overlap at least partially. In particular, within the strain gauge structure 40 and the detection structure 60, the detection conductor 31 can be interlocked with the connecting conductor 31' in a comb-like manner. This can increase the electrical capacitance between the detection conductor 31 and the connecting conductor 31' within the detection structure 60.

[0086] As already described above with reference to Fig. 1B and Fig. ID, the optoelectronic arrangement 100 can comprise a first substrate 70, distinct from the support substrate 10, which is arranged above the support substrate 10. In the example shown in Fig. 1B, the first substrate 70 is arranged on the side of the support substrate 10 opposite the strain gauge structure 40. It is also possible for the strain gauge structure 40 to be arranged between the support substrate 10 and the first substrate 70, as illustrated in Fig. ID. This further substrate 70 can comprise a material that is at least partially elastically modifiable. For example, the material can be formed from an optical clear adhesive (OCA), silicone, and / or PVB.

[0087] In order for the strain gauge structure 40 to follow the movements of the support substrate 10, it is useful that the support substrate 10 is mounted with sufficient flexibility to ensure, for example, that the strain gauge structure 40 can be stretched under local pressure (e.g., from a finger).

[0088] Fig. 5 shows a further embodiment in a stacked arrangement of support substrates 10 and substrates 70, 71. As can be seen from Fig. 5, the optoelectronic arrangement 100 can also have a second substrate 71 and a second support substrate 10 with at least one strain gauge structure 40 arranged thereon. The second substrate 71, like the first substrate 70, can have a material that is at least partially elastically modifiable.

[0089] The second substrate 71 can be arranged on a side of the support substrate 10 facing away from the first substrate 70. For example, the strain gauge structure 40 can be arranged between the first support substrate 10 and the second substrate 71. However, the strain gauge structure can also be arranged, as shown, on the side of the support substrate 10 facing away from the second substrate 71. Finally, the second support substrate 10, which has at least one further strain gauge structure 40, can be arranged on the second substrate 71. The second substrate 71 can be different from the first substrate 70 and from the first and second support substrates 10.

[0090] For example, the second substrate 71 can have a lower hardness than the first substrate 70. For example, the second substrate 71 can have a Shore A hardness of 50, and the first substrate 70 a Shore A hardness of 80. The corresponding strain gauge structures 40 can be arranged one above the other in the side view shown in Fig. 5.

[0091] When the optoelectronic arrangement 100 is touched with the finger F, it is possible to determine different pressure intensities of the pressure exerted by the finger F more precisely using this arrangement.

[0092] In the middle region of Fig. 5, the pressure exerted by finger F is only sufficient to deform the second support substrate 10 and the second substrate 71. In other words, the pressure of finger F is weak in this example. In the lower part of Fig. 5, the pressure exerted by finger F is stronger, so that both support substrates 10, as well as the first substrate 70 and the second substrate 71, are affected, i.e., deformed.

[0093] This stacked arrangement, comprising substrates 70 and 71 with different Shore hardnesses, allows for the coverage of different measuring ranges. Additional substrates (not shown in Fig. 5) can also be provided as needed.

[0094] The arrangement shown in Fig. 5 can be implemented with any arrangement of the strain gauge structure 40. More precisely, the strain gauge structure 40 can be arranged between the support substrate 10 and the associated first or second substrate 70, 71 according to all embodiments. According to further embodiments, the strain gauge structure can also be arranged on a side of the support substrate 10 facing away from the associated first or second substrate 70, 71.

[0095] In order to determine the influence of temperature on the strain gauge structure 40, the optoelectronic arrangement 100 can further have a second strain gauge structure 40 arranged on the support substrate 10.

[0096] Temperature is a factor that should be taken into account in all resistance measurements, as it can easily influence such measurements and lead to incorrect readings.

[0097] Temperature fluctuations are caused not only by the ambient temperature (for example, when the optoelectronic arrangement 100 is in direct sunlight) but also by the current flowing, for example, through the conductor 30 forming the strain gauge structure 40. This phenomenon is also known as self-heating. The second strain gauge structure 40, which is also formed by at least one further conductor 30 arranged on the substrate 10, can serve as a reference for temperature compensation.

[0098] Fig. 6 shows a simplified schematic representation of the optoelectronic arrangement 100 which enables temperature correction.

[0099] Temperature compensation can be achieved by the two strain gauge structures 40, one flexibly mounted for resistance changes and the other rigidly mounted for temperature compensation. In other words, the second strain gauge structure 40 can be rigidly arranged on the support substrate 10. For example, the first substrate 70 can be rigid, i.e., inflexible, at the position corresponding to the second strain gauge structure 40.

[0100] Temperature influences can be compensated for by the locally separated strain gauge structures 40.

[0101] For example, the second strain gauge structure 40 can detect the change in resistance caused by an ambient temperature and then subtract it from the change in resistance determined by the first strain gauge structure 40 to ensure a correct pressure determination. This can be done, for example, by the processing device 50.

[0102] Furthermore, the two strain gauge structures 40 can be arranged in such a way that a temperature input, for example from a finger F, can be compensated for. This correction ensures that the measurement only detects the mechanical change (the pressure) exerted by the finger. For example, the stacked arrangement of support substrates 10 and substrates 70, 71 shown in Fig. 5 can be used for this purpose. If, for example, the second substrate 71 is flexible and the first substrate 70 is rigid, only the second support substrate 10, which is arranged above the second substrate 71, is stretched when the finger F touches it. The first support substrate 10 can serve as a temperature reference (see the central region of Fig. 5). High thermal conductivity can be advantageous for the second substrate 71.This allows, for example, the temperature exerted by the finger F to be determined and corrected accordingly using the first support substrate and the strain gauge structure 40 arranged on it.

[0103] In other words, the first substrate 70 can be rigid. This makes it possible to use the first support substrate 10, which is arranged adjacent to the first substrate 70, as a reference for temperature compensation. The stacked arrangement of substrates 70, 71 and support substrates 10 shown in Fig. 5 can therefore also be useful for temperature compensation.

[0104] Fig. 7 shows a method for operating the optoelectronic arrangement 100 described above.

[0105] In operation S 110, a time-modulated control signal is applied via the connecting conductor track 30 ' to at least one semiconductor device 20 to generate electromagnetic radiation.

[0106] In operation S 120, the pressure exerted by a touch is detected and measured using the strain gauge structure 40. As previously described, the strain gauge structure 40, formed by at least one conductor 30, has an electrical resistance that changes upon contact. This change in resistance is generated and detected by a mechanical deformation of the conductor 30.

[0107] Furthermore, the method can include detecting contact with the strain gauge structure 40, which also has an electrical capacitance that is changed by the contact. The change in capacitance can be detected by a signal change in the conductor track 30.

[0108] Additionally, the method can include detecting the touch with the detection structure 60, which is formed by the detection conductor track 31 and which detects the touch.

[0109] The invention is not limited to the description provided by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if that feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments.

[0110] REFERENCE MARK LIST

[0111] 10 Carrier substrate

[0112] 30 conductor track 30 ' connecting conductor track

[0113] 31 Detection conductor track

[0114] 40 strain gauge structure

[0115] 50 processing units

[0116] 60 detection structure 70 substrate

[0117] 71 Substrat

[0118] 100 Optoelectronic arrangement

[0119] F Finger

Claims

REQUIREMENTS 1. Optoelectronic arrangement (100) comprising: a substrate (10); at least one semiconductor device (20) arranged on the substrate (10) which is configured to emit electromagnetic radiation during operation; at least one strain gauge structure (40) arranged on the substrate (10) which is formed by at least one conductor track (30) arranged on the substrate (10) and which is configured to detect pressure exerted by contact with the strain gauge structure (40).

2. Optoelectronic arrangement (100) according to claim 1, wherein the strain gauge structure (40) has an electrical resistance which can be changed by touch, and the change in resistance is generated and detected by a mechanical deformation of the conductor track (30).

3. Optoelectronic arrangement (100) according to claim 2, further comprising a processing unit (50) arranged on the carrier substrate (10) which is configured to determine the change in resistance in order to determine the applied pressure.

4. Optoelectronic arrangement (100) according to one of the preceding claims, further comprising a connecting conductor track (30') arranged on the support substrate (10) which is configured to supply the semiconductor device (20) with electrical energy.

5. Optoelectronic arrangement (100) according to one of the preceding claims, wherein the strain gauge structure (40) and the semiconductor device (50) are arranged on opposite sides of the support substrate (10).

6. Optoelectronic arrangement (100) according to one of the preceding claims, wherein the conductor track (30) forming the strain gauge structure (40) is further configured as a connecting conductor track (30') which is configured to provide electrical energy.

7. Optoelectronic arrangement (100) according to claims 1 to 4 and claim 6, wherein the conductor track (30) designed as a connecting conductor track (30') supplies the semiconductor device (20) with electrical energy.

8. Optoelectronic arrangement (100) according to claim 7, further comprising further semiconductor components (20) arranged on the support substrate (10) which are arranged within the strain gauge structure (40) and which are electrically connected in series via the connecting conductor track (30').

9. Optoelectronic arrangement (100) according to claim 7 or 8, wherein the strain gauge structure (40) is further configured to detect touch, wherein the strain gauge structure (40) has an electrical capacitance that can be changed by touch, and the change in capacitance is detected by a signal change in the conductor track (30).

10. Optoelectronic arrangement (100) according to claim 1 to 8, furthermore with a mounted on the carrier substrate (10) Detection structure (60) which is formed by a surface on the support substrate (10) a detection conductor track (31) is formed, and which is designed to detect contact.

11. Optoelectronic arrangement (100) according to claim 10, wherein the detection structure (60) and the strain gauge structure (40) overlap at least partially.

12. Optoelectronic arrangement (100) according to claim 10 or 11, wherein within the strain gauge structure (40) and the detection structure (60) the detection conductor track (31) is interlocked with the conductor track (30, 31') in a comb-like manner.

13. Optoelectronic arrangement (100) according to one of the preceding claims, further comprising a first substrate (70) different from the support substrate (10), which is arranged above the support substrate (10) and has a material that is at least partially elastically modifiable.

14. Optoelectronic arrangement (100) according to claim 13, further comprising a second substrate (71) arranged on a side of the support substrate (10) facing away from the first substrate (70), and a second support substrate (10) arranged on this second substrate (71) which has at least one further strain gauge structure (40).

15. Optoelectronic arrangement (100) according to claim 13, further comprising a second strain gauge structure (40) arranged on the support substrate (10), which is formed by at least one further conductor track (30) arranged on the support substrate (10), wherein the second strain gauge structure (40) serves as a reference for temperature compensation.

16. Optoelectronic arrangement (100) according to claim 15, wherein the first substrate (70) is rigid at the position corresponding to the further strain gauge structure (40).

17. Optoelectronic arrangement (100) according to claim 14, wherein the first substrate (70) is rigid and the first support substrate (10) serves as a reference for temperature compensation.

18. Optoelectronic arrangement (100) according to one of the preceding claims, wherein the support substrate (10) is transparent.

19. Method for operating an optoelectronic arrangement (100) , comprising: Applying (S110) a time-modulated control signal via a conductor track (30') to at least one semiconductor device (20) for generating electromagnetic radiation, detecting and measuring (S120) a pressure exerted by a touch with a strain gauge structure (40), wherein the strain gauge structure (40) formed by at least one conductor track (30) has an electrical resistance which is changed by the touch, and wherein the change in resistance is generated and detected by a mechanical deformation of the conductor track (30).

20. Method according to claim 19, further comprising: detecting the contact with the strain gauge structure (40) which further comprises an electrical capacitance which is changed by the contact, wherein the change in capacitance is detected by a signal change in the conductor track (30).

21. Method according to claim 19, further comprising detecting the contact with a detection structure (60) formed by a detection conductor track (60) and configured to detect the contact.

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