Semiconductor device and semiconductor device assembly

Abstract

This semiconductor device comprises a support, a plurality of semiconductor elements mounted on the support, a plurality of first leads, and an encapsulating resin. The encapsulating resin covers each semiconductor element, a part of the support, and a part of each first lead. The support includes an insulating layer and a first metal layer. Each first lead has a bonding portion bonded to the first metal layer, and a first terminal portion protruding from the encapsulating resin. The first metal layer includes a non-conductive portion not electrically connected to any of the plurality of semiconductor elements. The plurality of first leads include first terminal leads having bonding portions bonded to the non-conductive portion.

Description

Semiconductor device and semiconductor device assembly

[0001] The present disclosure relates to semiconductor devices and semiconductor device assemblies.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element that performs switching operations, multiple leads, and a sealing resin. Wires are connected between the semiconductor element and the leads to allow current to flow. When the semiconductor device is in use, heat is generated from the semiconductor element. Recently, as semiconductor devices tend to carry larger currents, the amount of heat generated by the semiconductor element tends to increase. When the amount of heat generated by the semiconductor element increases, there is a risk that the leads connected to the semiconductor element via the wires will become too hot.

[0003] Japanese Patent Application Laid-Open No. 2022-123260

[0004] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that has improved heat dissipation properties for heat generated in a semiconductor element and is suitable for passing a large current.

[0005] A semiconductor device provided by a first aspect of the present disclosure includes a support having a first main surface facing one side in a thickness direction and a second main surface facing the opposite side to the first main surface, one or more semiconductor elements mounted on the first main surface, a plurality of first leads, and a sealing resin covering the one or more semiconductor elements, at least a portion of the support, and a portion of each of the plurality of first leads, wherein the support includes an insulating layer and a first metal layer located on one side of the insulating layer in the thickness direction and having the first main surface, The multiple first leads are spaced apart from one another in a first direction perpendicular to the thickness direction, and each of the multiple first leads has a joint portion conductively joined to the first metal layer and a first terminal portion protruding from the sealing resin to one side in a second direction perpendicular to the thickness direction and the first direction, the first metal layer having a non-conductive portion that is not conductive to any of the one or more semiconductor elements, and the multiple first leads include first terminal leads, and the joint portion of the first terminal lead is conductively joined to the non-conductive portion.

[0006] A semiconductor device assembly provided by a second aspect of the present disclosure includes the semiconductor device according to the first aspect of the present disclosure and a heat dissipation member in contact with the second main surface.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a rear view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor element of the semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a partially enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 3. FIG. 15 is a circuit diagram showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 16 is a cross-sectional view showing a semiconductor device assembly including the semiconductor device according to the first embodiment of the present disclosure. FIG. 17 is a cross-sectional view showing a semiconductor device assembly including the semiconductor device according to the first embodiment of the present disclosure. FIG. 18 is a schematic diagram of a vehicle including the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 20 is a front view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 21 is a rear view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 22 is a right side view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 23 is a left side view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 24 is a bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 25 is a bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 25.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 15 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of first leads 1, a plurality of second leads 2, a support 3, one or more semiconductor elements 4, a thermistor 6, a plurality of wires 71, 72, 73, and 74, and a sealing resin 8.

[0013] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1, seen through the sealing resin 8. FIG. 4 is a bottom view showing the semiconductor device A1. FIG. 5 is a front view showing the semiconductor device A1. FIG. 6 is a rear view showing the semiconductor device A1. FIG. 7 is a plan view showing a semiconductor element of the semiconductor device A1. FIG. 8 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 3. FIG. 15 is a circuit diagram showing the semiconductor device A1. 3, the outline of the sealing resin 8 is shown by an imaginary line (two-dot chain line). The wire 71 is omitted in FIGS. 9 and 10, and the wires 71 and 72 are omitted in FIG.

[0014] In the description of the semiconductor device A1, the thickness direction (direction in a plan view) of the support 3 is an example of the "thickness direction" of the present disclosure and is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z is an example of the "first direction" of the present disclosure and is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is an example of the "second direction" of the present disclosure and is referred to as the "second direction y." Furthermore, one side of the thickness direction z corresponds to the "one side of the thickness direction" of the present disclosure and is referred to as the "z1 side of the thickness direction z," and the other side of the thickness direction z corresponds to the "other side of the thickness direction" of the present disclosure and is referred to as the "z2 side of the thickness direction z." One side of the first direction x is referred to as the "x1 side of the first direction x," and the other side of the first direction x is referred to as the "x2 side of the first direction x." One side of the second direction y corresponds to "one side of the second direction" in this disclosure and is referred to as "the y1 side of the second direction y," and the other side of the second direction y corresponds to "the other side of the second direction" in this disclosure and is referred to as "the y2 side of the second direction y."

[0015] 3 and 8 to 13, the support 3 supports one or more semiconductor elements 4. In this embodiment, the support 3 supports a plurality of semiconductor elements 4. The support 3 supporting one or more semiconductor elements 4 includes a form in which the one or more semiconductor elements 4 are directly supported by being directly bonded to the support 3, and a form in which the one or more semiconductor elements 4 are indirectly supported with another member interposed between the one or more semiconductor elements 4 and the support 3.

[0016] The specific configuration of the support 3 is not particularly limited. The support 3 is formed, for example, by an AMB (Active Metal Brazing) substrate or a DBC (Direct Bonded Copper) substrate. In this embodiment, the support 3 includes an insulating layer 31, a first metal layer 32, and a second metal layer 33. The support 3 has a first main surface 3a and a second main surface 3b. The first main surface 3a faces the z1 side in the thickness direction z. The second main surface 3b faces the opposite side to the first main surface 3a (the z2 side in the thickness direction z). The thickness of the support 3 (the dimension in the thickness direction z) is not particularly limited and is, for example, approximately 0.4 mm or more and 3.0 mm or less.

[0017] The insulating layer 31 is made of an insulating material, such as a ceramic with excellent thermal conductivity. Examples of such ceramics include aluminum nitride (AlN), silicon nitride (SiN), and alumina (Al2O3). The insulating layer 31 is not limited to ceramics and may be an insulating resin sheet or the like. The shape of the insulating layer 31 is not particularly limited, and for example, is rectangular in a plan view. In this embodiment, the insulating layer 31 has an elongated rectangular shape with the first direction x as the longitudinal direction when viewed in the thickness direction z. The thickness of the insulating layer 31 is not particularly limited, and for example, is approximately 0.05 mm or more and 1.0 mm or less.

[0018] The first metal layer 32 is located on the z1 side of the insulating layer 31 in the thickness direction z. The first metal layer 32 is bonded to the surface of the insulating layer 31 facing the z1 side in the thickness direction z. The constituent material of the first metal layer 32 includes a metal such as copper (Cu). The constituent material may also include other metals such as aluminum (Al) and molybdenum (Mo). By using the DBC substrate or the like, the first metal layer 32 including the first portion 321 to the sixth portion 326 described below can be easily formed, for example, by patterning copper foil bonded to the insulating layer 31. The first metal layer 32 has a first main surface 3a. The first main surface 3a faces the z1 side in the thickness direction z. The thickness of the first metal layer 32 is not particularly limited and is, for example, approximately 0.1 mm to 1.5 mm.

[0019] The first metal layer 32 includes a first portion 321, a second portion 322, a third portion 323, a fourth portion 324, a fifth portion 325, and two sixth portions 326. The surfaces of the first portion 321 to the sixth portion 326 may be plated with, for example, silver (Ag).

[0020] The first portion 321 is located on the insulating layer 31 closer to the x2 side in the first direction x. The first portion 321 supports one of the multiple semiconductor elements 4. The second portion 322 is located on the x1 side in the first direction x with respect to the first portion 321, and is adjacent to the first portion 321. The second portion 322 supports one of the multiple semiconductor elements 4. The third portion 323 is located on the x1 side in the first direction x with respect to the second portion 322, and is adjacent to the second portion 322. The third portion 323 supports one of the multiple semiconductor elements 4. The fourth portion 324 is located on the x1 side in the first direction x with respect to the third portion 323, and is adjacent to the third portion 323. The fourth portion 324 supports one of the multiple semiconductor elements 4.

[0021] The fifth portion 325 is located near a corner on the x1 side in the first direction x and on the y1 side in the second direction y of the insulating layer 31. The fifth portion 325 is adjacent to the fourth portion 324. The fifth portion 325 does not support any of the multiple semiconductor elements 4. The two sixth portions 326 are located near a corner on the x1 side in the first direction x and on the y2 side in the second direction y of the insulating layer 31. The two sixth portions 326 support the thermistors 6.

[0022] The second metal layer 33 is located on the z2 side of the insulating layer 31 in the thickness direction z. The second metal layer 33 is bonded to the surface of the insulating layer 31 facing the z2 side in the thickness direction z. The material of the second metal layer 33 is not limited and may include, for example, a metal such as copper (Cu). In this embodiment, the material of the second metal layer 33 may be the same as the material of the first metal layer 32. The second metal layer 33 has a second main surface 3b. The second main surface 3b is a flat surface facing the z2 side in the thickness direction z. In this embodiment, the second main surface 3b is exposed from the sealing resin 8. A heat dissipation member (e.g., a heat sink) or the like (not shown) can be attached to the second main surface 3b. As shown in FIG. 4 and other figures, the second main surface 3b is rectangular in plan view and has a first edge 331 and a second edge 332. The first edge 331 is located at the end of the second main surface 3b on the y1 side in the second direction y. The second edge 332 is located at the end of the second main surface 3b on the y2 side in the second direction y.

[0023] The first leads 1 and the second leads 2 are made of a metal and have a higher thermal conductivity than the insulating layer 31, for example. The metal constituting the first leads 1 and the second leads 2 is not particularly limited, and may be, for example, copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (e.g., a Cu—Sn alloy, a Cu—Zr alloy, a Cu—Fe alloy, etc.). The first leads 1 and the second leads 2 may be plated with nickel (Ni). The first leads 1 and the second leads 2 may be formed, for example, by pressing a mold against a metal plate, or by patterning a metal plate by etching. The method for forming the first leads 1 and the second leads 2 is not particularly limited. The thickness of the first leads 1 and the second leads 2 is not particularly limited, and may be, for example, approximately 0.4 mm or more and 0.8 mm or less. The first leads 1 and the second leads 2 are spaced apart from each other.

[0024] 1 to 5 and 9 to 12, the multiple first leads 1 include leads 11, 12, 13, 14, and 15. The leads 11, 12, 13, 14, and 15 form a conduction path to the semiconductor element 4. The leads 11, 12, 13, 14, and 15 are spaced apart from one another in the first direction x.

[0025] In the illustrated example, the lead 11 is located closer to the x2 side in the first direction x than the other leads 12 to 15. The lead 11 includes a bonding portion 111, a first terminal portion 112, and a first pad portion 113. The bonding portion 111 is rectangular in plan view and is the portion that is bonded to the first portion 321. The bonding portion 111 is electrically bonded to the end of the first portion 321 on the y1 side in the second direction y. This electrically bonded portion may be formed in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0026] The first terminal portion 112 is a portion of the lead 11 that protrudes from the sealing resin 8. In the illustrated example, two first terminal portions 112 are provided spaced apart in the first direction x. Each first terminal portion 112 is located on the opposite side of the bonding portion 111 in the second direction y. Each first terminal portion 112 protrudes from the sealing resin 8 toward the y1 side in the second direction y. The first terminal portions 112 are used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the first terminal portion 112 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z) and extends toward the z1 side in the thickness direction z. As shown in FIGS. 1 and 5 , the tip of one of the first terminal portions 112 is tapered. The first pad portion 113 is located between the bonding portion 111 and the first pad portion 113 in the second direction y. The first pad portion 113 has a rectangular shape in plan view with sides extending along the first direction x and the second direction y. The bonding portion 111 and the first pad portion 113 are covered with the sealing resin 8.

[0027] In the illustrated example, the lead 12 is located on the x1 side in the first direction x with respect to the lead 11. The lead 12 includes a bonding portion 121, a first terminal portion 122, and a first pad portion 123. The bonding portion 121 has a rectangular shape in a plan view and is a portion that is bonded to the second portion 322. The bonding portion 121 is electrically bonded to an end portion of the second portion 322 on the y1 side in the second direction y. This electrically bonded portion may be formed in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0028] The first terminal portion 122 is a portion of the lead 12 that protrudes from the sealing resin 8. The first terminal portion 122 is located on the opposite side of the bonding portion 121 in the second direction y. The first terminal portion 122 protrudes from the sealing resin 8 toward the y1 side in the second direction y. The first terminal portion 122 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the first terminal portion 122 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z) and extends toward the z1 side in the thickness direction z. As shown in FIGS. 1 and 5 , the tip of the first terminal portion 122 is tapered. The first pad portion 123 is located between the bonding portion 121 and the first pad portion 123 in the second direction y. The first pad portion 123 has a rectangular shape in a plan view with sides extending along the first direction x and the second direction y. The wire 71 is bonded to the first pad portion 123. The bonding portion 121 and the first pad portion 123 are covered with the sealing resin 8.

[0029] In the illustrated example, the lead 13 is located on the x1 side in the first direction x with respect to the lead 12. The lead 13 includes a bonding portion 131, a first terminal portion 132, and a first pad portion 133. The bonding portion 131 has a rectangular shape in a plan view and is a portion that is bonded to the third portion 323. The bonding portion 131 is conductively bonded to an end of the third portion 323 on the y1 side in the second direction y. This conductive bonding may be achieved in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0030] The first terminal portion 132 is a portion of the lead 13 that protrudes from the sealing resin 8. The first terminal portion 132 is located on the opposite side of the bonding portion 131 in the second direction y. The first terminal portion 132 protrudes from the sealing resin 8 toward the y1 side in the second direction y. The first terminal portion 132 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the first terminal portion 132 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z) and extends toward the z1 side in the thickness direction z. As shown in FIGS. 1 and 5 , the tip of the first terminal portion 132 is tapered. The first pad portion 133 is located between the bonding portion 131 and the first pad portion 133 in the second direction y. The first pad portion 133 has a rectangular shape in a plan view with sides extending along the first direction x and the second direction y. The wire 71 is bonded to the first pad portion 133. The bonding portion 131 and the first pad portion 133 are covered with the sealing resin 8.

[0031] In the illustrated example, the lead 14 is located on the x1 side in the first direction x with respect to the lead 13. The lead 14 includes a bonding portion 141, a first terminal portion 142, and a first pad portion 143. The bonding portion 141 has a rectangular shape in a plan view and is a portion that is bonded to the fourth portion 324. The bonding portion 141 is electrically bonded to an end of the fourth portion 324 on the y1 side in the second direction y. This electrically bonded portion may be formed in various ways, such as by using a conductive bonding material or by welding including laser welding.

[0032] The first terminal portion 142 is a portion of the lead 14 that protrudes from the sealing resin 8. The first terminal portion 142 is located on the opposite side of the bonding portion 141 in the second direction y. The first terminal portion 142 protrudes from the sealing resin 8 toward the y1 side in the second direction y. The first terminal portion 142 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the first terminal portion 142 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z) and extends toward the z1 side in the thickness direction z. As shown in FIGS. 1 and 5 , the tip of the first terminal portion 142 is tapered. The first pad portion 143 is located between the bonding portion 141 and the first pad portion 143 in the second direction y. The first pad portion 143 has a rectangular shape in a plan view with sides extending along the first direction x and the second direction y. The wire 71 is bonded to the first pad portion 143. The bonding portion 141 and the first pad portion 143 are covered with the sealing resin 8.

[0033] In the illustrated example, lead 15 is located on the x1 side in the first direction x with respect to lead 14. Lead 15 includes a bonding portion 151, a first terminal portion 152, and a first pad portion 153. Bonding portion 151 has a rectangular shape in a plan view and is a portion bonded to fifth portion 325. Bonding portion 151 is conductively bonded to fifth portion 325. This conductive bonding may take various forms, such as a form using a conductive bonding material or a form formed by welding including laser welding.

[0034] The first terminal portion 152 is a portion of the lead 15 that protrudes from the sealing resin 8. The first terminal portion 152 is located on the opposite side of the bonding portion 151 in the second direction y. The first terminal portion 152 protrudes from the sealing resin 8 toward the y1 side in the second direction y. The first terminal portion 152 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the first terminal portion 152 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z) and extends toward the z1 side in the thickness direction z. As shown in FIGS. 1 and 5 , the tip of the first terminal portion 152 is tapered. The first pad portion 153 is located between the bonding portion 151 and the first pad portion 153 in the second direction y. The first pad portion 153 has a rectangular shape in a plan view with sides extending along the first direction x and the second direction y. The wire 71 is bonded to the first pad portion 153. The bonding portion 151 and the first pad portion 153 are covered with the sealing resin 8.

[0035] 3, the length L1 of the first pad portion 153 (113, 123, 133, 143) in the second direction y is longer than the protrusion length L2 of the first terminal portion 152 (112, 122, 132, 142) protruding from the sealing resin 8 in the second direction y. Furthermore, the first pad portions 113, 123, 133, 143, 153 of each of the multiple first leads 1 (leads 11 to 15) are aligned at the same position in the second direction y. The ends of the first terminal portions 112, 122, 132, 142, 152 of each of the multiple first leads 1 (leads 11 to 15) on the y1 side in the second direction y are aligned at the same position in the second direction y.

[0036] 1 to 4, 6, and 9 to 14, the plurality of second leads 2 include a plurality of leads 21, a plurality of leads 22, and two leads 23. The leads 21 and 22 form conductive paths to a second electrode 42 and a third electrode 43 (described later) of the semiconductor element 4. The two leads 23 form conductive paths to the thermistor 6.

[0037] Each of the multiple leads 21 is not bonded to the first metal layer 32, and is supported by the sealing resin 8. The multiple leads 21 are arranged at intervals in the first direction x. The configuration of the leads 21 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 10 , the leads 21 include a second terminal portion 212 and a pad portion 213.

[0038] The second terminal portion 212 is a portion of the lead 21 that protrudes from the sealing resin 8. The second terminal portion 212 protrudes from the sealing resin 8 toward the y2 side in the second direction y. The second terminal portion 212 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second terminal portion 212 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z). The pad portion 213 is covered with the sealing resin 8. The pad portion 213 is parallel to the first metal layer 32. A wire 73 is bonded to the pad portion 213.

[0039] Each of the multiple leads 22 is not bonded to the first metal layer 32 and is supported by the sealing resin 8. The multiple leads 22 are arranged at intervals in the first direction x. Each of the multiple leads 22 is arranged adjacent to one of the multiple leads 21 so as to form a pair. The configuration of the leads 22 is not particularly limited. In this embodiment, as shown in FIGS. 3, 9, and 11, the leads 22 include a second terminal portion 222 and a pad portion 223.

[0040] The second terminal portion 222 is a portion of the lead 22 that protrudes from the sealing resin 8. The second terminal portion 222 protrudes from the sealing resin 8 toward the y2 side in the second direction y. The second terminal portion 222 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second terminal portion 222 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z). The pad portion 223 is covered with the sealing resin 8. The pad portion 223 is parallel to the first metal layer 32. A wire 72 is bonded to the pad portion 223.

[0041] The two leads 23 are not bonded to the first metal layer 32, and are supported by the sealing resin 8. The two leads 23 are arranged side by side in the first direction x. The configuration of the leads 23 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 12 , the leads 23 include a second terminal portion 232 and a pad portion 233.

[0042] The second terminal portion 232 is a portion of the lead 23 that protrudes from the sealing resin 8. The second terminal portion 232 protrudes from the sealing resin 8 toward the y2 side in the second direction y. The second terminal portion 232 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the example shown, the second terminal portion 232 is bent in the thickness direction z toward the side toward which the first main surface 3a of the support 3 faces (the z1 side in the thickness direction z). The pad portion 233 is covered with the sealing resin 8. The pad portion 233 is parallel to the first metal layer 32. A wire 74 is bonded to the pad portion 233.

[0043] Each of the plurality of semiconductor elements 4 is an electronic component that serves as the functional center of the semiconductor device A1, and in this embodiment, is a switching element. The plurality of semiconductor elements 4 are arranged on the first main surface 3a of the first metal layer 32. Specifically, four or more semiconductor elements 4 are arranged spaced apart from one another, and each of the plurality of semiconductor elements 4 is supported by one of the first portion 321 to the fourth portion 324 of the first metal layer 32. In this embodiment, the plurality of semiconductor elements 4 include semiconductor elements 4A to 4F. In the illustrated example, six semiconductor elements 4A to 4F are provided, but this is just an example, and the number of semiconductor elements 4 is not limited in any way.

[0044] The semiconductor element 4 (each of the semiconductor elements 4A to 4F) is configured to include at least one of a wide bandgap semiconductor and an ultra-wide bandgap semiconductor, for example. Examples of wide bandgap semiconductors include SiC (silicon carbide) and GaN (gallium nitride). Examples of ultra-wide bandgap semiconductors include GaO (gallium oxide) and C (diamond). In this embodiment, the semiconductor element 4 (each of the semiconductor elements 4A to 4F) is, for example, a MOSFET (SiC MOSFET (metal-oxide-semiconductor field-effect transistor)) made of a SiC (silicon carbide) substrate. Note that the semiconductor element 4 may be a MOSFET made of a Si (silicon) substrate instead of a SiC substrate, and may include, for example, an IGBT element. The semiconductor element 4 may also be a MOSFET containing GaN (gallium nitride).

[0045] As shown in FIGS. 3 and 7 to 13 , each of the semiconductor elements 4A to 4F has a rectangular plate shape in a planar view and includes an element body 40, a first electrode 41, a second electrode 42, and a third electrode 43. The element body 40 includes a SiC substrate or the like. The first electrode 41 is located on the z2 side of the element body 40 in the thickness direction z. The second electrode 42 and the third electrode 43 are located on the z1 side of the element body 40 in the thickness direction z. The shapes and arrangements of the first electrode 41, the second electrode 42, and the third electrode 43 are not limited. In the illustrated example, the second electrode 42 is larger than the third electrode 43 in the thickness direction z. The second electrode 42 may include two separated regions in the thickness direction z. In this embodiment, the semiconductor elements 4A to 4F are MOSFETs including a SiC substrate, in which the first electrode 41 is a drain electrode, the second electrode 42 is a source electrode, and the third electrode 43 is a gate electrode.

[0046] As shown in FIGS. 3 , 11 , and 13 , the semiconductor elements 4A, 4B, and 4C are located on the first portion 321. The semiconductor elements 4A, 4B, and 4C are bonded to the first portion 321 by a conductive bonding material 49. Examples of the conductive bonding material 49 include solder, metal paste, and a sintered metal material. The first electrodes 41 of the semiconductor elements 4A, 4B, and 4C are electrically connected to the first portion 321 by the conductive bonding material 49. The bonding portions 111 electrically connected to the first portion 321 are electrically connected to the first electrodes 41 of the semiconductor elements 4A, 4B, and 4C. As shown in FIG. 3 , the second electrode 42 of the semiconductor element 4A is electrically connected to the first pad 123 of the lead 12 by a wire 71. The second electrode 42 of the semiconductor element 4B is electrically connected to the first pad 133 of the lead 13 by a wire 71. The second electrode 42 of the semiconductor element 4C is electrically connected to the first pad portion 143 of the lead 14 by a wire 71. The wire 71 is made of, for example, aluminum (Al) or copper (Cu). Note that the material, diameter, number, etc. of the wire 71 are not limited in any way.

[0047] 3 , 9 , and 13 , the semiconductor element 4D is located on the second portion 322. The semiconductor element 4D is bonded to the second portion 322 by a conductive bonding material 49. As a result, the first electrode 41 of the semiconductor element 4D is conductively connected to the second portion 322 by the conductive bonding material 49. The bonding portion 121 conductively bonded to the second portion 322 is conductively connected to the first electrode 41 of the semiconductor element 4D. As shown in FIG. 3 , the second electrode 42 of the semiconductor element 4D is conductively connected to the first pad portion 153 of the lead 15 by a wire 71.

[0048] 3 , 10 , and 13 , the semiconductor element 4E is located on the third portion 323. The semiconductor element 4E is bonded to the third portion 323 by a conductive bonding material 49. As a result, the first electrode 41 of the semiconductor element 4E is conductively connected to the third portion 323 by the conductive bonding material 49. The bonding portion 131 conductively bonded to the third portion 323 is conductively connected to the first electrode 41 of the semiconductor element 4E. As shown in FIG. 3 , the second electrode 42 of the semiconductor element 4E is conductively connected to the first pad portion 153 of the lead 15 by a wire 71.

[0049] 3 and 12 , the semiconductor element 4F is located on the fourth portion 324. The semiconductor element 4F is bonded to the fourth portion 324 by a conductive bonding material 49. As a result, the first electrode 41 of the semiconductor element 4F is conductively connected to the fourth portion 324 by the conductive bonding material 49. The bonding portion 141 conductively bonded to the fourth portion 324 is conductively connected to the first electrode 41 of the semiconductor element 4F. As shown in FIG. 3 , the second electrode 42 of the semiconductor element 4F is conductively connected to the first pad portion 153 of the lead 15 by a wire 71.

[0050] None of the multiple semiconductor elements 4 are bonded to the fifth portion 325 of the first metal layer 32. As a result, the fifth portion 325 is not electrically connected to any of the multiple semiconductor elements 4. The bonding portion 151 of the lead 15 is electrically connected to the fifth portion 325. The fifth portion 325 corresponds to the "non-conductive portion" in this disclosure. The lead 15 corresponds to the "first terminal lead" in this disclosure.

[0051] The third electrode 43 of the semiconductor element 4A is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4A is a terminal (gate terminal) for inputting a drive signal to the semiconductor element 4A. The second electrode 42 of the semiconductor element 4A is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4A is a terminal for detecting a source signal (source sense terminal) of the semiconductor element 4A. The wires 72 and 73 are made of, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), or the like. Note that the material, diameter, number, etc. of the wires 72 and 73 are not limited in any way.

[0052] The third electrode 43 of the semiconductor element 4B is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4B is the gate terminal of the semiconductor element 4B. The second electrode 42 of the semiconductor element 4B is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4B is the source sense terminal of the semiconductor element 4B.

[0053] The third electrode 43 of the semiconductor element 4C is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4C is the gate terminal of the semiconductor element 4C. The second electrode 42 of the semiconductor element 4C is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4C is the source sense terminal of the semiconductor element 4C.

[0054] The third electrode 43 of the semiconductor element 4D is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4D is the gate terminal of the semiconductor element 4D. The second electrode 42 of the semiconductor element 4D is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4D is the source sense terminal of the semiconductor element 4D.

[0055] The third electrode 43 of the semiconductor element 4E is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4E is the gate terminal of the semiconductor element 4E. The second electrode 42 of the semiconductor element 4E is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4E is the source sense terminal of the semiconductor element 4E.

[0056] The third electrode 43 of the semiconductor element 4F is conductively connected to the pad portion 223 of the lead 22 by a wire 72. The lead 22 conductively connected to the third electrode 43 of the semiconductor element 4F is the gate terminal of the semiconductor element 4F. The second electrode 42 of the semiconductor element 4F is conductively connected to the pad portion 213 of the lead 21 by a wire 73. The lead 21 conductively connected to the second electrode 42 of the semiconductor element 4F is the source sense terminal of the semiconductor element 4F.

[0057] As shown in FIG. 15 , the semiconductor device A1 includes, for example, a half-bridge switching circuit. In this case, semiconductor elements 4A, 4B, and 4C constitute the upper arm circuit of the semiconductor device A1, and semiconductor elements 4D, 4E, and 4F constitute the lower arm circuit. In the upper arm circuit, the semiconductor elements 4A, 4B, and 4C are connected in parallel with each other, and in the lower arm circuit, the semiconductor elements 4D, 4E, and 4F are connected in parallel with each other. The semiconductor elements 4A, 4B, and 4C and the corresponding semiconductor elements 4D, 4E, and 4F are individually connected in series to form a bridge layer. In the semiconductor device A1, a DC voltage to be converted into power is input to leads 11 and 15. Lead 11 is the positive electrode (P terminal), and lead 15 is the negative electrode (N terminal). An AC voltage converted into power by the semiconductor elements 4A to 4F is output from leads 12, 13, and 14. The plurality of first leads 1 (leads 11 to 15) are power leads for passing currents that are the switching targets of the plurality of semiconductor elements 4 (semiconductor elements 4A to 4F).

[0058] As shown in FIG. 3 , in this embodiment, multiple semiconductor elements 4 (semiconductor elements 4A to 4F) are arranged side by side in the first direction x. Semiconductor element 4A is located at the end on the x2 side in the first direction x, and semiconductor element 4F is located at the end on the x1 side in the first direction x. The semiconductor elements 4A to 4F are arranged in this order from the x2 side in the first direction x to the x1 side in the first direction x. In the illustrated example, semiconductor element 4B is located on the y2 side in the second direction y relative to semiconductor element 4A in the second direction y. Semiconductor element 4B overlaps semiconductor element 4A when viewed in the second direction y. The four semiconductor elements 4B to 4E are arranged at regular intervals along the first direction x. Semiconductor element 4F is located on the y1 side in the second direction y relative to semiconductor element 4E in the second direction y. Semiconductor element 4F overlaps semiconductor element 4E when viewed in the second direction y.

[0059] The thermistor 6 is a temperature detection element mounted on the support 3. The thermistor 6 is a resistor whose electrical resistance changes greatly with temperature, and the resistance value changes in response to the ambient temperature, thereby changing the voltage between its terminals. The ambient temperature of the thermistor 6 is detected based on the voltage between its terminals. The characteristics of the thermistor 6 are not limited. The thermistor 6 may be an NTC (negative temperature coefficient) thermistor, a PTC (positive temperature coefficient) thermistor, or a thermistor with other characteristics.

[0060] The thermistor 6 detects the temperature of the semiconductor device A1. As shown in FIGS. 3 and 12 , the thermistor 6 is disposed across the two sixth portions 326 of the first metal layer 32. The thermistor 6 is bonded to the sixth portions 326 via a conductive bonding material 69. The conductive bonding material 69 may be any material that can bond the thermistor 6 to the sixth portions 326 and electrically connect the thermistor 6 to the sixth portions 326. Examples of the conductive bonding material 69 include solder, metal paste, and a metal sintered material. One terminal of the thermistor 6 is conductively bonded to one sixth portion 326 via the conductive bonding material 69, and the other terminal of the thermistor 6 is conductively bonded to the other sixth portion 326 via the conductive bonding material 69.

[0061] Each of the two sixth portions 326 is conductively connected to a pad portion 233 of the lead 23 via a wire 74. The sixth portion 326 and the wire 74 form a conductive path that connects the thermistor 6 to the lead 23. The two leads 23 serve as terminals for detecting the temperature of the semiconductor device A1, and output a voltage between the terminals of the thermistor 6.

[0062] The semiconductor device A1 may include another temperature detection element instead of the thermistor 6. Examples of such another temperature detection element include a semiconductor temperature sensor. The semiconductor temperature sensor is a silicon diode or the like, which exhibits a large change in forward voltage relative to temperature changes, and detects the ambient temperature based on the voltage between its terminals when a predetermined current is passed through it. Unlike the present embodiment, the semiconductor device A1 may be configured without including a temperature detection element such as the thermistor 6.

[0063] The sealing resin 8 covers the semiconductor elements 4 (semiconductor elements 4A to 4F), the thermistor 6, wires 71 to 74, a portion of each of the first leads 1 and the second leads 2, and a portion of the support body 3. There are no particular limitations on the material of the sealing resin 8, and it may be made of, for example, a black epoxy resin. The sealing resin 8 is formed, for example, by molding.

[0064] The sealing resin 8 has a first resin main surface 81, a second resin main surface 82, a resin side surface 83, a resin side surface 84, a first resin side surface 85, and a second resin side surface 86. The first resin main surface 81 and the second resin main surface 82 are surfaces facing opposite each other in the thickness direction z and are both flat surfaces perpendicular to the thickness direction z. The first resin main surface 81 faces the z1 side in the thickness direction z, and the second resin main surface 82 faces the z2 side in the thickness direction z. As shown in FIG. 4 , the second resin main surface 82 has a frame shape surrounding the second main surface 3b of the support 3 (second metal layer 33) in a planar view. The second main surface 3b is exposed from the second resin main surface 82. The second main surface 3b and the second resin main surface 82 are, for example, flush with each other. The second main surface 3b and the second resin main surface 82 may be located at different positions in the thickness direction z.

[0065] The resin side surface 83, the resin side surface 84, the first resin side surface 85, and the second resin side surface 86 are connected to both the first resin main surface 81 and the second resin main surface 82 and are sandwiched between them in the thickness direction z. The resin side surface 83 and the resin side surface 84 are spaced apart in the first direction x. The resin side surface 83 faces the x1 side of the first direction x, and the resin side surface 84 faces the x2 side of the first direction x. The first resin side surface 85 and the second resin side surface 86 are spaced apart in the second direction y. The first resin side surface 85 faces the y1 side of the second direction y, and the second resin side surface 86 faces the y2 side of the second direction y. A portion of each of the multiple first leads 1 protrudes from the first resin side surface 85. Specifically, first terminal portions 112, 122, 132, 142, and 152 of the leads 11 to 15 protrude from the first resin side surface 85 toward the y1 side in the second direction y. A portion of each of the plurality of second leads 2 protrudes from the second resin side surface 86. Specifically, second terminal portions 212, 222, and 232 of the plurality of leads 21 to 23 protrude from the second resin side surface 86 toward the y2 side in the second direction y.

[0066] 9 to 12 , the ratio of the length L4 in the second direction y between the first edge 331 and the first resin side surface 85 to the length L3 in the second direction y between the first edge 331 and the second edge 332 of the second main surface 3b is, for example, 10% to 300%, preferably 18% to 133%, and more preferably 33% to 71%. Furthermore, the ratio of the length L5 in the second direction y between the second edge 332 and the second resin side surface 86 to the length L3 in the second direction y between the first edge 331 and the second edge 332 is, for example, 10% to 300%, preferably 18% to 133%, and more preferably 33% to 71%.

[0067] In this embodiment, as shown in FIGS. 4 , 9 to 12 , etc., the sealing resin 8 has a plurality of first grooves 821 and a plurality of second grooves 822. The plurality of first grooves 821 and the plurality of second grooves 822 are formed in the second resin main surface 82. In the illustrated example, the sealing resin 8 has three first grooves 821 and three second grooves 822. The plurality of first grooves 821 are located between the second main surface 3b and the first resin side surface 85 in the second direction y. The plurality of first grooves 821 are spaced apart from one another in the second direction y, and each extends the entire length in the first direction x. The plurality of second grooves 822 are located between the second main surface 3b and the second resin side surface 86 in the second direction y. The plurality of second grooves 822 are spaced apart from one another in the second direction y, and each extends the entire length in the first direction x.

[0068] 2 to 4, 14, etc., the sealing resin 8 has a recess 831 and a recess 841. The recess 831 is located at the center of the resin side surface 83 in the second direction y, and is recessed from the resin side surface 83 toward the x2 side in the first direction x. The recess 841 is located at the center of the resin side surface 84 in the second direction y, and is recessed from the resin side surface 84 toward the x1 side in the first direction x. The recess 831 and the recess 841 are used, for example, to fix a heat dissipation member when it is attached to the semiconductor device A1.

[0069] In this embodiment, as shown in Figures 2, 4, 5, etc., the sealing resin 8 has a plurality of first recesses 851. The plurality of first recesses 851 are recessed from the first resin side surface 85 toward the y2 side in the second direction y. Two or more first recesses 851 are located between adjacent first terminals 112, 122, 132, 142, and 152 in the first direction x. In the illustrated example, two first recesses 851 are located between the first terminal 112 and the first terminal 122 that are adjacent in the first direction x, and two first recesses 851 are located between the first terminal 122 and the first terminal 132 that are adjacent in the first direction x. Two first recesses 851 are located between adjacent first terminal portions 132 and 142 in the first direction x, and two first recesses 851 are located between adjacent first terminal portions 142 and 152 in the first direction x.

[0070] 2 , 4 , 6 , etc., the sealing resin 8 has a plurality of second recesses 861. The plurality of second recesses 861 are recessed from the second resin side surface 86 toward the y1 side in the second direction y. Two or more second recesses 861 are located between adjacent second terminals 212, 222, 232 in the first direction x. In the illustrated example, two second recesses 861 are located between the second terminal 212 and the second terminal 222 that are adjacent in the first direction x, and two second recesses 861 are located between the second terminal 222 and the second terminal 232 that are adjacent in the first direction x.

[0071] Next, the operation of the semiconductor device A1 will be described.

[0072] The support 3 includes an insulating layer 31 and a first metal layer 32 located on the z1 side of the insulating layer 31 in the thickness direction z. The first metal layer 32 has a first main surface 3a facing the z1 side in the thickness direction z, and semiconductor elements 4A to 4F are mounted on the first main surface 3a. The multiple first leads 1 (leads 11 to 15) have bonding portions 111, 121, 131, 141, and 151 conductively bonded to the first metal layer 32 and first terminal portions 112, 122, 132, 142, and 152 protruding from the sealing resin 8 toward the y1 side in the second direction y. The first metal layer 32 has a fifth portion 325 (non-conductive portion) that is not conductively connected to any of the semiconductor elements 4A to 4F. The bonding portion 151 of the lead 15 (first terminal lead) is conductively bonded to the fifth portion 325. With this configuration, even if heat generated in the semiconductor element 4 reaches the leads 15 via the wires 71 connected between the semiconductor element 4 and the leads 15, the heat from the semiconductor element 4 can be dissipated to the support 3 side through the bonding portions 151 bonded to the fifth portion 325. This prevents the leads 15 from becoming too hot even if the amount of heat generated by the semiconductor element 4 increases. Therefore, the semiconductor device A1 can improve the heat dissipation properties of the heat generated in the semiconductor element 4, and is suitable for passing a large current.

[0073] The multiple first leads 1 (leads 11 to 15) have first pad portions 113, 123, 133, 143, and 153 covered with sealing resin 8. Each of the first pad portions 113, 123, 133, 143, and 153 has a rectangular shape with sides extending along the first direction x and the second direction y when viewed in the thickness direction z. A length L1 in the second direction y of each of the first pad portions 153 (113, 123, 133, and 143) is longer than a protrusion length L2 of each of the first terminal portions 152 (112, 122, 132, and 142) protruding from the sealing resin 8 in the second direction y. This configuration ensures a large planar size for each of the first pad portions 113, 123, 133, 143, and 153, thereby improving the heat dissipation performance of the semiconductor device A1. The first pads 113, 123, 133, 143, and 153 are rectangular and large in size in plan view, which facilitates bonding of the wires 71 and improves the strength with which the leads 11 to 15 are held by the sealing resin 8. This improves the reliability of the semiconductor device A1.

[0074] The first pads 113, 123, 133, 143, and 153 of the first leads 1 (leads 11 to 15) are aligned at the same position in the second direction y. This configuration facilitates bonding of the first leads 1 (bonding portions 111, 121, 131, 141, and 151 of the leads 11 to 15) to the first metal layer 32 (first portion 321 to fifth portion 325).

[0075] The first terminals 112, 122, 132, 142, and 152 of the multiple first leads 1 (leads 11 to 15) have their ends on the y1 side in the second direction y aligned at the same position in the second direction y. The first terminals 112, 122, 132, 142, and 152 are bent and extend toward the z1 side in the thickness direction z, and have tapered tips. This configuration makes it easy to connect the first terminals 112, 122, 132, 142, and 152 to an external circuit board or the like.

[0076] The second metal layer 33 of the support 3 has a second main surface 3b. The second main surface 3b is exposed from the second resin main surface 82. The ratio of the length L4 in the second direction y between the first edge 331 and the first resin side surface 85 to the length L3 in the second direction y between the first edge 331 and the second edge 332 of the second main surface 3b is 10% or more and 300% or less. Furthermore, the ratio of the length L5 in the second direction y between the second edge 332 and the second resin side surface 86 to the length L3 in the second direction y between the first edge 331 and the second edge 332 is 10% or more and 300% or less. This configuration allows the sealing resin 8 to extend relatively long in the second direction y from the support 3. This allows the volume of the sealing resin 8 to be relatively large, further improving the heat dissipation of the semiconductor device A1.

[0077] On the other hand, by relatively shortening the protrusion length L2 of the multiple first leads 1 (first terminal portions 112, 122, 132, 142, 152) protruding in the second direction y from the sealing resin 8 and the protrusion length of the multiple second leads 2 protruding in the second direction y from the sealing resin 8, there is no need to change the overall length of the semiconductor device A1 in the second direction y (the length from the ends of the multiple first leads 1 on the y1 side in the second direction y to the ends of the multiple second leads 2 on the y2 side in the second direction y). Therefore, it is possible to increase the volume of the sealing resin 8 as described above without changing the area (footprint) required for mounting the semiconductor device A1 on a circuit board or the like.

[0078] The sealing resin 8 has a plurality of first grooves 821 and a plurality of second grooves 822 formed in the second resin main surface 82. The plurality of first grooves 821 are located between the second main surface 3b and the first resin side surface 85 in the second direction y, are spaced apart from one another in the second direction y, and each extend in the first direction x. This configuration ensures a large creepage distance between the second metal layer 33 and the plurality of first leads 1 (first terminals 112, 122, 132, 142, 152) protruding from the sealing resin 8. The plurality of second grooves 822 are located between the second main surface 3b and the second resin side surface 86 in the second direction y, are spaced apart from one another in the second direction y, and each extend in the first direction x. This configuration ensures a large creepage distance between the second metal layer 33 and the plurality of second leads 2 (second terminals 212, 222, 232) protruding from the sealing resin 8. This makes the semiconductor device A1 suitable for passing a large current.

[0079] The sealing resin 8 has a plurality of first recesses 851. The plurality of first recesses 851 are recessed from the first resin side surface 85 toward the y2 side in the second direction y. Two or more first recesses 851 are located between adjacent first terminals 112, 122, 132, 142, and 152 in the first direction x. This configuration increases the creepage distance between adjacent first terminals 112, 122, 132, 142, and 152 in the first direction x. This makes the semiconductor device A1 suitable for passing a large current.

[0080] The sealing resin 8 has a plurality of second recesses 861. The plurality of second recesses 861 are recessed from the second resin side surface 86 toward the y1 side in the second direction y. Two or more second recesses 861 are located between adjacent second terminals 212, 222, 232 in the first direction x. This configuration can increase the creepage distance between adjacent second terminals 212, 222, 232 in the first direction x. This makes the semiconductor device A1 suitable for passing a large current.

[0081] Note that the semiconductor device according to the present disclosure is not limited to the shapes and dimensions of the components shown in the semiconductor device A1 of this embodiment. For example, the width and depth of each of the first grooves 821, the second grooves 822, the first recesses 851, and the second recesses 861 can be changed as appropriate. Furthermore, the length L3 in the second direction y between the first edge 331 and the second edge 332 of the second main surface 3b of the second metal layer 33 (i.e., the length of the support 3 in the second direction y) can be made larger than the example shown in the semiconductor device A1. In this case, the heat dissipation performance of the semiconductor device according to the present disclosure can be further improved.

[0082] Next, an example of use of the semiconductor device A1 will be described with reference to FIGS.

[0083] 16 and 17 show a semiconductor device assembly B1 configured to include the semiconductor device A1 of the above embodiment. Figures 16 and 17 are cross-sectional views showing the semiconductor device assembly B1. Figure 16 shows a cross section similar to Figure 11, and Figure 17 shows a cross section similar to Figure 14. The semiconductor device assembly B1 includes the semiconductor device A1 and a heat dissipation member 91.

[0084] The heat dissipation member 91 is disposed on the z2 side in the thickness direction z with respect to the semiconductor device A1. The heat dissipation member 91 is disposed facing the second main surface 3b of the support 3. In the example shown, the heat dissipation member 91 is in contact with the second main surface 3b. The heat dissipation member 91 is in contact with the entire surface of the second main surface 3b. As shown in FIG. 17 , for example, the heat dissipation member 91 is fixed to the semiconductor device A1 using two screw members 911. The screw shanks of the two screw members 911 are housed in the recesses 831 and 841, respectively.

[0085] The semiconductor device assembly B1 includes a heat dissipation member 91 in contact with the second main surface 3b of the semiconductor device A1 (support 3). This configuration further improves the heat dissipation performance of the semiconductor device A1. Furthermore, as described above, in the semiconductor device A1, the length by which the sealing resin 8 protrudes from the support 3 in the second direction y can be made relatively long. This allows the length L6 in the second direction y of the contact portion of the heat dissipation member 91 with the semiconductor device A1 to be relatively long while ensuring a predetermined insulation distance from the plurality of first leads 1 and the plurality of second leads 2 to the heat dissipation member 91. This is preferable for improving the heat dissipation performance of the semiconductor device A1.

[0086] FIG. 18 is a schematic diagram of a vehicle B2 equipped with a semiconductor device A1. The vehicle B2 includes an AC-DC converter 871, a power receiving device 872, a storage battery 873, a drive system 874, and a DC-DC converter 875. The semiconductor device A1 constitutes part (a PFC circuit) of the AC-DC converter 871. When vehicle B2 receives AC power from a charging facility 870, which is an AC power source installed outdoors, the AC-DC converter 871 converts the AC power into high-voltage DC power. The AC-DC converter 871 supplies the high-voltage DC power to a storage battery 873. The power receiving device 872 supplies power to the storage battery 873 via a contactless charging system, and power is supplied via electromagnetic induction from a contactless charger (not shown) installed in a parking lot or the like. The power stored in the storage battery 873 is supplied to a drive system 874 consisting of an inverter, an AC motor, and a transmission. The drive system 874 drives the vehicle B2. The DC-DC converter 875 supplies power to electrical components other than those used to drive the vehicle B2, and is, for example, a step-down DC-DC converter. The AC-DC converter 871 is an example of a "power converter" in the present disclosure. The semiconductor device A1 can be used not only as an AC-DC converter, but also as a DC-DC converter, a DC-AC converter, or other power converter.

[0087] Second Embodiment: FIGS. 19 to 27 show a semiconductor device according to a second embodiment of the present disclosure. In these figures, elements identical or similar to those in the above embodiment are designated by the same reference numerals, and redundant description will be omitted. A semiconductor device A2 according to this embodiment includes a plurality of first leads 1, a plurality of second leads 2, a support 3, a plurality of semiconductor elements 4, a thermistor 6, a plurality of wires 71, 72, 73, and 74, and a sealing resin 8. FIG. 19 is a plan view of the semiconductor device A2. FIG. 20 is a front view of the semiconductor device A2. FIG. 21 is a rear view of the semiconductor device A2. FIG. 22 is a right side view of the semiconductor device A2. FIG. 23 is a left side view of the semiconductor device A2. FIG. 24 is a bottom view of the semiconductor device A2. FIG. 25 is a bottom view of the semiconductor device A2, seen through the sealing resin 8. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG.

[0088] In the description of the semiconductor device A2, the thickness direction (direction in a plan view) of the support 3 is an example of the "thickness direction" of the present disclosure and is referred to as the "thickness direction z." The direction perpendicular to the thickness direction z is an example of the "first direction" of the present disclosure and is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is an example of the "second direction" of the present disclosure and is referred to as the "second direction y." Furthermore, one side of the thickness direction z corresponds to the "one side of the thickness direction" of the present disclosure and is referred to as the "z1 side of the thickness direction z," and the other side of the thickness direction z corresponds to the "other side of the thickness direction" of the present disclosure and is referred to as the "z2 side of the thickness direction z." One side of the first direction x is referred to as the "x1 side of the first direction x," and the other side of the first direction x is referred to as the "x2 side of the first direction x." One side in the second direction y corresponds to “one side in the second direction” in the present disclosure and is referred to as “y1 side in the second direction y,” and the other side in the second direction y corresponds to “the other side in the second direction” in the present disclosure and is referred to as “y2 side in the second direction y.” Note that the semiconductor device A2 of this embodiment is shown in a position that is upside down compared to the semiconductor device A1 of the above embodiment.

[0089] In the semiconductor device A2 of this embodiment, the configurations of the first terminal portions 112, 122, 132, 142, 152 of each of the multiple first leads 1 (leads 11 to 15) and the second terminal portions 212, 222, 232 of each of the multiple second leads 2 (multiple leads 21, multiple leads 22, and two leads 23) are different from those of the semiconductor device A1 of the above embodiment.

[0090] The first terminal portion 112 of the lead 11 protrudes from the sealing resin 8 to the y1 side in the second direction y and is folded back to the z1 side in the thickness direction z. The first terminal portion 112 has a mounting surface 11a. The mounting surface 11a faces the z1 side in the thickness direction z. The first terminal portion 122 of the lead 12 protrudes from the sealing resin 8 to the y1 side in the second direction y and is folded back to the z1 side in the thickness direction z. The first terminal portion 122 has a mounting surface 12a. The mounting surface 12a faces the z1 side in the thickness direction z. The first terminal portion 132 of the lead 13 protrudes from the sealing resin 8 to the y1 side in the second direction y and is folded back to the z1 side in the thickness direction z. The first terminal portion 132 has a mounting surface 13a. The mounting surface 13a faces the z1 side in the thickness direction z. The first terminal portion 142 of the lead 14 protrudes from the sealing resin 8 to the y1 side in the second direction y and is folded back to the z1 side in the thickness direction z. The first terminal portion 142 has a mounting surface 14a. The mounting surface 14a faces the z1 side in the thickness direction z. The first terminal portion 152 of the lead 15 protrudes from the sealing resin 8 to the y1 side in the second direction y and is folded back to the z1 side in the thickness direction z. The first terminal portion 152 has a mounting surface 15a. The mounting surface 15a faces the z1 side in the thickness direction z.

[0091] The mounting surfaces 11a, 12a, 13a, 14a, and 15a of the first terminal portions 112, 122, 132, 142, and 152, respectively, are surfaces that are electrically connected to the mounting substrate 92 when the semiconductor device A2 is mounted on, for example, the mounting substrate 92. The positions of the mounting surfaces 11a, 12a, 13a, 14a, and 15a in the thickness direction z may be the same as the first resin main surface 81, or may be on the z1 side of the first resin main surface 81 in the thickness direction z.

[0092] The second terminal portion 212 of the lead 21 protrudes from the sealing resin 8 to the y2 side in the second direction y and is folded back to the z1 side in the thickness direction z. The second terminal portion 212 has a mounting surface 21a. The mounting surface 21a faces the z1 side in the thickness direction z. The second terminal portion 222 of the lead 22 protrudes from the sealing resin 8 to the y2 side in the second direction y and is folded back to the z1 side in the thickness direction z. The second terminal portion 222 has a mounting surface 22a. The mounting surface 22a faces the z1 side in the thickness direction z. The second terminal portion 232 of the lead 23 protrudes from the sealing resin 8 to the y2 side in the second direction y and is folded back to the z1 side in the thickness direction z. The second terminal portion 232 has a mounting surface 23a. The mounting surface 23a faces the z1 side in the thickness direction z.

[0093] The mounting surfaces 21a, 22a, and 23a of the second terminal portions 212, 222, and 232, respectively, are surfaces that are electrically connected to the mounting substrate 92 when the semiconductor device A2 is mounted on, for example, the mounting substrate 92. The positions of the mounting surfaces 21a, 22a, and 23a in the thickness direction z may be the same as the first resin main surface 81, or may be on the z1 side of the first resin main surface 81 in the thickness direction z.

[0094] Next, the operation of the semiconductor device A2 will be described.

[0095] The support 3 includes an insulating layer 31 and a first metal layer 32 located on the z1 side of the insulating layer 31 in the thickness direction z. The first metal layer 32 has a first main surface 3a facing the z1 side in the thickness direction z, and semiconductor elements 4A to 4F are mounted on the first main surface 3a. The multiple first leads 1 (leads 11 to 15) have bonding portions 111, 121, 131, 141, and 151 conductively bonded to the first metal layer 32 and first terminal portions 112, 122, 132, 142, and 152 protruding from the sealing resin 8 toward the y1 side in the second direction y. The first metal layer 32 has a fifth portion 325 (non-conductive portion) that is not conductively connected to any of the semiconductor elements 4A to 4F. The bonding portion 151 of the lead 15 (first terminal lead) is conductively bonded to the fifth portion 325. With this configuration, even if heat generated in the semiconductor element 4 reaches the leads 15 via the wires 71 connected between the semiconductor element 4 and the leads 15, the heat from the semiconductor element 4 can be dissipated to the support 3 side through the bonding portions 151 bonded to the fifth portion 325. This prevents the leads 15 from becoming too hot even if the amount of heat generated by the semiconductor element 4 increases. Therefore, the semiconductor device A2 can improve the heat dissipation properties of the heat generated in the semiconductor element 4, and is suitable for passing a large current.

[0096] The multiple first leads 1 (leads 11 to 15) have first pads 113, 123, 133, 143, and 153 covered with sealing resin 8. Each of the first pads 113, 123, 133, 143, and 153 has a rectangular shape with sides extending along the first direction x and the second direction y when viewed in the thickness direction z. A length L1 in the second direction y of each of the first pads 153 (113, 123, 133, and 143) is longer than a protrusion length L2 of each of the first terminals 152 (112, 122, 132, and 142) protruding from the sealing resin 8 in the second direction y. This configuration ensures a large planar size for each of the first pads 113, 123, 133, 143, and 153, thereby improving the heat dissipation of the semiconductor device A2. The first pads 113, 123, 133, 143, and 153 are rectangular and large in size in plan view, which facilitates bonding of the wires 71 and improves the strength with which the leads 15 are held by the sealing resin 8. This improves the reliability of the semiconductor device A2.

[0097] The first pads 113, 123, 133, 143, and 153 of the first leads 1 (leads 11 to 15) are aligned at the same positions in the second direction y. This configuration facilitates bonding of the first leads 1 (bonding portions 111, 121, 131, 141, and 151 of the leads 11 to 15) to the first metal layer 32 (first portion 321 to fifth portion 325).

[0098] The second metal layer 33 of the support 3 has a second main surface 3b. The second main surface 3b is exposed from the second resin main surface 82. The ratio of the length L4 in the second direction y between the first edge 331 and the first resin side surface 85 to the length L3 in the second direction y between the first edge 331 and the second edge 332 of the second main surface 3b is 10% or more and 300% or less. Furthermore, the ratio of the length L5 in the second direction y between the second edge 332 and the second resin side surface 86 to the length L3 in the second direction y between the first edge 331 and the second edge 332 is 10% or more and 300% or less. This configuration allows the sealing resin 8 to extend relatively long in the second direction y from the support 3. This allows the volume of the sealing resin 8 to be relatively large, further improving the heat dissipation of the semiconductor device A2.

[0099] The sealing resin 8 has a plurality of first grooves 821 and a plurality of second grooves 822 formed in the second resin main surface 82. The plurality of first grooves 821 are located between the second main surface 3b and the first resin side surface 85 in the second direction y, are spaced apart from one another in the second direction y, and each extend in the first direction x. This configuration ensures a large creepage distance between the second metal layer 33 and the plurality of first leads 1 (first terminals 112, 122, 132, 142, 152) protruding from the sealing resin 8. The plurality of second grooves 822 are located between the second main surface 3b and the second resin side surface 86 in the second direction y, are spaced apart from one another in the second direction y, and each extend in the first direction x. This configuration ensures a large creepage distance between the second metal layer 33 and the plurality of second leads 2 (second terminals 212, 222, 232) protruding from the sealing resin 8. This makes the semiconductor device A2 suitable for passing a large current.

[0100] The sealing resin 8 has a plurality of first recesses 851. The plurality of first recesses 851 are recessed from the first resin side surface 85 toward the y2 side in the second direction y. Two or more first recesses 851 are located between adjacent first terminals 112, 122, 132, 142, and 152 in the first direction x. This configuration increases the creepage distance between adjacent first terminals 112, 122, 132, 142, and 152 in the first direction x. This makes the semiconductor device A2 suitable for passing a large current.

[0101] The sealing resin 8 has a plurality of second recesses 861. The plurality of second recesses 861 are recessed from the second resin side surface 86 toward the y1 side in the second direction y. Two or more second recesses 861 are located between adjacent second terminals 212, 222, 232 in the first direction x. This configuration makes it possible to increase the creepage distance between adjacent second terminals 212, 222, 232 in the first direction x. This makes the semiconductor device A2 suitable for passing a large current.

[0102] As shown in FIGS. 24 to 27 , the mounting surfaces 11a, 12a, 13a, 14a, and 15a of the first terminal portions 112, 122, 132, 142, and 152 and the mounting surfaces 21a, 22a, and 23a of the second terminal portions 212, 222, and 232 face the z1 side in the thickness direction z. This enables so-called surface mounting, which utilizes the mounting surfaces 11a, 12a, 13a, 14a, and 15a and the mounting surfaces 21a, 22a, and 23a, when mounting the semiconductor device A2 on the mounting board 92. Therefore, the semiconductor device A2 can improve the efficiency of the mounting operation.

[0103] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0104] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a support (3) having a first main surface (3a) facing one side (z1 side) in a thickness direction (z) and a second main surface (3b) facing the opposite side to the first main surface (3a), one or more semiconductor elements (4) mounted on the first main surface (3a), a plurality of first leads (1), and a sealing resin (8) covering the one or more semiconductor elements (4), at least a portion of the support (3), and a portion of each of the plurality of first leads (1), wherein the support (3) includes an insulating layer (31) and a first metal layer (32) located on one side (z1 side) in the thickness direction (z) of the insulating layer 31 and having the first main surface (3a), and the plurality of first leads (1) are spaced apart from each other in a first direction (x) perpendicular to the thickness direction (z), Each of the plurality of first leads (1) has a joint portion (111, 121, 131, 141, 151) conductively joined to the first metal layer (32) and a first terminal portion (112, 122, 132, 142, 152) protruding from the sealing resin (8) to one side (y1 side) in a second direction (y) perpendicular to the thickness direction (z) and the first direction (x), the first metal layer (32) has a non-conductive portion (325) that is not conductive to any of the one or more semiconductor elements (4), the plurality of first leads (1) include a first terminal lead (15), and the joint portion (151) of the first terminal lead (15) is conductively joined to the non-conductive portion (325).Supplementary Note 2. Each of the plurality of first leads (1) has a first pad portion (113, 123, 133, 143, 153) that is located between the joint portion (111, 121, 131, 141, 151) and the first terminal portion (112, 122, 132, 142, 152) in the second direction (y) and is covered with the sealing resin (8), and the first pad portion (113, 123, 133, 143, 153) has a rectangular shape with sides along the first direction (x) and the second direction (y) when viewed in the thickness direction (z), The semiconductor device (A1, A2) according to Appendix 1, wherein a length (L1) of the first pad portion (113, 123, 133, 143, 153) in the second direction (y) is longer than a protrusion length (L2) of the first terminal portion (112, 122, 132, 142, 152) protruding in the second direction (y) from the sealing resin (8). Appendix 3. The semiconductor device (A1, A2) according to Appendix 2, wherein the first pad portions (113, 123, 133, 143, 153) of the plurality of first leads (1) are aligned at the same position in the second direction (y). Appendix 4. The semiconductor device (A1, A2) according to any one of Supplementary Notes 1 to 3, wherein the first terminal portions (112, 122, 132, 142, 152) of the plurality of first leads (1) have ends on one side (y1 side) in the second direction (y) aligned at the same position in the second direction (y).Supplementary Note 5: The semiconductor device (A1) according to any one of Supplementary Notes 1 to 4, wherein the first terminal portions (112, 122, 132, 142, 152) are bent and extend to one side (z1 side) in the thickness direction (z) and have tapered tips.Supplementary Note 6: The semiconductor device (A2) according to any one of Supplementary Notes 1 to 4, wherein the first terminal portions (112, 122, 132, 142, 152) have mounting surfaces (11a, 12a, 13a, 14a, 15a) facing one side (z1 side) in the thickness direction (z).Supplementary Note 7: The sealing resin (8) has a first resin main surface (81) facing one side (z1 side) in the thickness direction (z), a second resin main surface (82) facing the other side (z2 side) in the thickness direction (z), a first resin side surface (85) facing one side (y1 side) in the second direction (y), and a second resin side surface (86) facing the other side (y2 side) in the second direction (y), the support (3) is located on the other side (z2 side) in the thickness direction (z) of the insulating layer (31) and includes a second metal layer (33) having the second main surface (3b), the second main surface (3b) being exposed from the second resin main surface (82), The semiconductor device (A1, A2) according to any one of Supplementary Notes 1 to 6, wherein the second main surface (3b) has a first edge (331) located at an end on one side (y1 side) in the second direction (y) and a second edge (332) located at an end on the other side (y2 side) in the second direction (y), and a ratio of a length (L4) in the second direction (y) between the first edge (331) and the first resin side surface (85) to a length (L3) in the second direction (y) between the first edge (331) and the second edge (332) is 10% or more and 300% or less. The semiconductor device (A1, A2) according to Appendix 7, wherein the sealing resin (8) has a plurality of first grooves (821) formed in the second resin main surface (82), the plurality of first grooves (821) being located between the second main surface (3b) and the first resin side surface (85) in the second direction (y), being spaced apart from one another in the second direction (y), and each extending in the first direction (x). Appendix 9. The semiconductor device (A1, A2) according to Appendix 7 or 8, wherein the sealing resin (8) has a plurality of first recesses (851) each recessed from the first resin side surface (85) toward the other side (y2 side) in the second direction (y). Appendix 10. The semiconductor device (A1, A2) described in Appendix 9, wherein the first terminal portions (112, 122, 132, 142, 152) of the plurality of first leads (1) protrude from the first resin side surface (85), and two or more of the first recesses (851) are located between the first terminal portions (112, 122, 132, 142, 152) adjacent to each other in the first direction (x).Appendix 11. The semiconductor device (A1, A2) according to any one of Appendixes 7 to 10, further comprising a plurality of second leads (2), the plurality of second leads (2) being spaced apart from one another in the first direction (x), each of the plurality of second leads (2) having a second terminal portion (212, 222, 232) protruding from the second resin side surface (86) to the other side (y2 side) in the second direction (y), and a ratio of a length (L5) in the second direction (y) between the second edge (332) and the second resin side surface (86) to a length (L3) in the second direction (y) between the first edge (331) and the second edge (332) is 10% or more and 300% or less. Appendix 12. The semiconductor device (A1, A2) according to Appendix 11, wherein the sealing resin (8) has a plurality of second grooves (822) formed in the second resin main surface (82), the plurality of second grooves (822) being located between the second main surface (3b) and the second resin side surface (86) in the second direction (y), being spaced apart from one another in the second direction (y), and each extending in the first direction (x). Appendix 13. The semiconductor device (A1, A2) according to Appendix 11 or 12, wherein the sealing resin (8) has a plurality of second recesses (861) each recessed from the second resin side surface (86) to one side (y1 side) in the second direction (y). Appendix 14. The semiconductor device (A1, A2) according to Appendix 13, wherein two or more of the second recesses (861) are located between the second terminal portions (212, 222, 232) adjacent to each other in the first direction (x). Appendix 15. The semiconductor device (A1, A2) according to any one of Supplementary Notes 1 to 14, comprising a plurality of the semiconductor elements (4), the plurality of semiconductor elements (4) being arranged side by side in the first direction (x).Supplementary Note 16. The semiconductor device (A1, A2) according to any one of Supplementary Notes 1 to 15, wherein the one or more semiconductor elements (4) are switching elements, and the plurality of first leads (1) are power leads for passing currents that are the switching targets of the one or more semiconductor elements.Supplementary Note 17. The semiconductor device (A1, A2) according to any one of Supplementary Notes 1 to 16, wherein the first metal layer (32) has a conductive portion (321, 323, 323, 324) electrically connected to any one of the one or more semiconductor elements (4), and the joint portions (111, 121, 131, 141) of the first leads (1) other than the first terminal lead (15) among the plurality of first leads (1) are electrically connected to the conductive portion (321, 323, 323, 324). Supplementary Note 18. A semiconductor device assembly (B1) comprising: the semiconductor device (A1) according to any one of Supplementary Notes 1 to 17; and a heat dissipation member (91) in contact with the second main surface (3b). Supplementary Note 19. A vehicle (B2) comprising a power conversion device (AC-DC conversion device 871) configured including the semiconductor device (A1) according to Supplementary Note 16.

[0105] A1, A2: semiconductor device B1: semiconductor device assembly B2: vehicle 1: first lead 11 to 14: leads 15: lead (first terminal lead) 11a, 12a, 13a, 14a, 15a: mounting surface 111, 121, 131, 141, 151: bonding portion 112, 122, 132, 142, 152: first terminal portion 113, 123, 133, 143, 153: first pad portion 2: second lead 21 to 23: leads 21a, 22a, 23a: mounting surface 212, 222, 232: second terminal portion 213, 223, 233: pad portion 3: support 3a: first main surface 3b: second main surface 31: insulating layer 32: first metal layer 321: first portion 322: Second part 323: Third part 324: Fourth part 325: Fifth part (non-conductive part) 326: Sixth part 33: Second metal layer 331: First edge 332: Second edge 4, 4A to 4F: Semiconductor element 40: Element body 41: First electrode 42: Second electrode 43: Third electrode 49: Conductive bonding material 6: Thermistor 69: Conductive bonding material 71 to 74: Wire 8: Sealing resin 81: First resin main surface 82: Second resin main surface 821: First groove 822: Second groove 83, 84: Resin side surface 831, 841: Recess 85: First resin side surface 851: First recess 86: Second resin side surface 861: Second recess 870: Charging facility 871: AC-DC converter (power converter) 872: Power receiving device 873: Storage battery 874: Drive system 875: DC-DC converter 91: Heat dissipation member 911: Screw member 92: Mounting board L1, L3 to L6: Length L2: Protrusion length

Claims

1. A semiconductor device comprising: a support having a first main surface facing one side in a thickness direction and a second main surface facing the opposite side to the first main surface; one or more semiconductor elements mounted on the first main surface; a plurality of first leads; and a sealing resin covering the one or more semiconductor elements, at least a portion of the support, and a portion of each of the plurality of first leads, wherein the support includes an insulating layer and a first metal layer located on one side of the insulating layer in the thickness direction and having the first main surface, the plurality of first leads being spaced apart from one another in a first direction perpendicular to the thickness direction, each of the plurality of first leads having a joining portion conductively joined to the first metal layer and a first terminal portion protruding from the sealing resin to one side in a second direction perpendicular to the thickness direction and the first direction, the first metal layer having a non-conductive portion not conductive to any of the one or more semiconductor elements, and the plurality of first leads including first terminal leads, The semiconductor device, wherein the joint portion of the first terminal lead is conductively joined to the non-conductive portion.

2. The semiconductor device described in claim 1, wherein each of the plurality of first leads has a first pad portion located between the bonding portion and the first terminal portion in the second direction and covered with the sealing resin, the first pad portion has a rectangular shape when viewed in the thickness direction and has sides along the first direction and the second direction, and the length of the first pad portion in the second direction is longer than the length by which the first terminal portion protrudes from the sealing resin in the second direction.

3. The semiconductor device according to claim 2, wherein the first pad portions of the plurality of first leads are aligned at the same position in the second direction.

4. The semiconductor device according to claim 1, wherein the first terminal portions of the plurality of first leads have ends on one side in the second direction aligned at the same position in the second direction.

5. A semiconductor device according to any one of claims 1 to 4, wherein said first terminal portion is bent and extends to one side in said thickness direction, and has a tapered tip.

6. The semiconductor device according to claim 1, wherein the first terminal portion has a mounting surface facing one side in the thickness direction.

7. A semiconductor device according to any one of claims 1 to 6, wherein the sealing resin has a first resin main surface facing one side in the thickness direction, a second resin main surface facing the other side in the thickness direction, a first resin side surface facing one side in the second direction, and a second resin side surface facing the other side in the second direction; the support body includes a second metal layer located on the other side in the thickness direction of the insulating layer and having the second main surface; the second main surface is exposed from the second resin main surface; the second main surface has a first edge located at an end on one side in the second direction and a second edge located at an end on the other side in the second direction; and the ratio of the length in the second direction between the first edge and the second edge to the length in the second direction between the first edge and the second edge is 10% or more and 300% or less.

8. The semiconductor device described in claim 7, wherein the sealing resin has a plurality of first grooves formed in the second resin main surface, the plurality of first grooves being located between the second main surface and the first resin side surface in the second direction, being spaced apart from one another in the second direction, and each extending in the first direction.

9. The semiconductor device according to claim 7 or 8, wherein the sealing resin has a plurality of first recesses each recessed from the first resin side surface to the other side in the second direction.

10. The semiconductor device according to claim 9, wherein the first terminal portions of the plurality of first leads protrude from the first resin side surface, and two or more of the first recesses are located between the first terminal portions adjacent to each other in the first direction.

11. A semiconductor device as described in any one of claims 7 to 10, further comprising a plurality of second leads, the plurality of second leads being spaced apart from one another in the first direction, each of the plurality of second leads having a second terminal portion protruding from the second resin side surface to the other side in the second direction, and the ratio of the length in the second direction between the second edge and the second resin side surface to the length in the second direction between the first edge and the second edge being 10% or more and 300% or less.

12. The semiconductor device described in claim 11, wherein the sealing resin has a plurality of second grooves formed in the second resin main surface, the plurality of second grooves being located between the second main surface and the second resin side surface in the second direction, being spaced apart from one another in the second direction, and each extending in the first direction.

13. The semiconductor device according to claim 11 or 12, wherein the sealing resin has a plurality of second recesses each recessed from the second resin side surface to one side in the second direction.

14. The semiconductor device according to claim 13, wherein two or more of the second recesses are located between the second terminal portions adjacent to each other in the first direction.

15. The semiconductor device according to any one of claims 1 to 14, comprising a plurality of said semiconductor elements, said plurality of semiconductor elements being arranged side by side in said first direction.

16. A semiconductor device according to any one of claims 1 to 15, wherein the one or more semiconductor elements are switching elements, and the plurality of first leads are power leads for passing currents that are the switching targets of the one or more semiconductor elements.

17. A semiconductor device assembly comprising: a semiconductor device according to any one of claims 1 to 16; and a heat dissipation member in contact with the second main surface.

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