Light-emitting assembly and manufacturing method therefor, and display substrate

By employing an encapsulation design of organic and inorganic film layers in the light-emitting component, the problem of water and oxygen adsorption on the side of the component after cutting is solved, thereby improving the yield and reliability of the light-emitting component.

WO2026025293A1PCT designated stage Publication Date: 2026-02-05BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
PCT/CN2024/108557
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-07-30
Publication Date
2026-02-05

AI Technical Summary

Technical Problem

The light-emitting components obtained after cutting are prone to absorbing water and oxygen on their sides, leading to failure and a low yield.

Method used

The structure employs a layered organic and inorganic membrane structure, with the first inorganic membrane layer wrapping around the edge of the organic membrane layer to prevent the organic membrane layer from being exposed and thus preventing water and oxygen intrusion.

Benefits of technology

This effectively prevents the intrusion of external water and oxygen, improves the yield of the light-emitting components, and ensures the reliability of the components.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to the technical field of display, and discloses a light-emitting assembly and a manufacturing method therefor, and a display substrate. The light-emitting assembly comprises a first substrate, and a light-emitting unit and a driving unit which are electrically connected to each other. A first inorganic film layer in a driving circuit in the driving unit covers an organic film layer and wraps the edge of the organic film layer to avoid exposure of the organic film layer. In this way, external moisture and oxygen can be prevented from penetrating along the organic film layer into the light-emitting assembly, thereby avoiding failure of the light-emitting assembly due to moisture and oxygen ingress, and ensuring the yield of the light-emitting assembly.
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Description

Light-emitting components and their fabrication methods, display substrates Technical Field

[0001] This application relates to the field of display technology, and in particular to a light-emitting component, its preparation method, and a display substrate. Background Technology

[0002] The display substrate includes a driving backplane and multiple light-emitting components connected to the driving backplane. The driving backplane can provide driving signals to the light-emitting components, so that the light-emitting components emit light, thereby realizing the display.

[0003] Summary of the Invention

[0004] This application provides a light-emitting component, a method for fabricating the same, and a display substrate. The technical solution is as follows:

[0005] On one hand, a light-emitting component is provided, the light-emitting component comprising:

[0006] First substrate;

[0007] A light-emitting unit located on one side of the first substrate, the light-emitting unit including a first electrode, a second electrode, and a light-emitting part electrically connected to the first electrode and the second electrode respectively;

[0008] And a driving unit located on the side of the light-emitting unit away from the first substrate, the driving unit including a third electrode, a fourth electrode and a driving circuit electrically connected to the third electrode and the fourth electrode respectively, the third electrode and the first electrode being electrically connected, and the fourth electrode being electrically connected to the second electrode;

[0009] The driving circuit includes a stacked organic film layer and a first inorganic film layer. The first inorganic film layer is closer to the light-emitting unit relative to the organic film layer. The orthographic projection of the first inorganic film layer on the first substrate covers the orthographic projection of the organic film layer on the first substrate, and the first inorganic film layer wraps around the edge of the organic film layer.

[0010] Optionally, the orthographic projection of the light-emitting unit on the first substrate and the orthographic projection of the driving unit on the first substrate are both located within the first substrate.

[0011] Optionally, the distance between the orthographic projection of the edge of the driving unit onto the first substrate and the edge of the first substrate is greater than 0.

[0012] Optionally, the driving circuit further includes a substrate and a second inorganic film layer, wherein the second inorganic film layer, the organic film layer and the first inorganic film layer are all located on the substrate and are stacked sequentially in a direction away from the substrate;

[0013] The orthographic projection of the organic film layer on the first substrate lies within the orthographic projection of the second inorganic film layer on the first substrate, and the orthographic projection of the edge of the organic film layer on the first substrate is further away from the orthographic projection of the edge of the substrate on the first substrate than the orthographic projection of the edge of the second inorganic film layer on the first substrate.

[0014] Optionally, the orthographic projection of the substrate on the first substrate lies within the orthographic projection of the second inorganic film layer on the first substrate, and the area of ​​the orthographic projection of the substrate on the first substrate is less than or equal to the area of ​​the orthographic projection of the second inorganic film layer on the first substrate.

[0015] Optionally, the orthographic projection of the first inorganic film layer on the first substrate is located within the orthographic projection of the second inorganic film layer on the first substrate;

[0016] The angle between the side edge of the first inorganic film layer and the surface of the substrate is an acute angle, and the angle between the side edge of the second inorganic film layer and the surface of the substrate is an acute angle;

[0017] Wherein, the acute angle is the included angle on the side where the inorganic film layer is located.

[0018] Optionally, the edges of the first inorganic film layer and the edges of the second inorganic film layer form a stepped edge;

[0019] The stepped edge includes: the side edge of the first inorganic film layer, the surface of the second inorganic film layer exposed by the first inorganic film layer, and the side edge of the second inorganic film layer. One end of the side edge of the first inorganic film layer is connected to one end of the surface, and the other end of the surface is connected to one end of the side edge of the second inorganic film layer. The surface is parallel to the surface of the substrate.

[0020] Optionally, the driving circuit further includes: a third inorganic film layer located on the side of the first inorganic film layer away from the substrate, and a plurality of fourth inorganic film layers located between the substrate and the second inorganic film layer;

[0021] The orthographic projection of the third inorganic film layer on the first substrate is located within the orthographic projection of the first inorganic film layer on the first substrate, and the area of ​​the orthographic projection of the third inorganic film layer on the first substrate is smaller than the area of ​​the orthographic projection of the first inorganic film layer on the first substrate.

[0022] The orthographic projection of the second inorganic film layer on the first substrate lies within the orthographic projection of any fourth inorganic film layer on the first substrate, and the area of ​​the orthographic projection of the second inorganic film layer on the first substrate is smaller than the area of ​​the orthographic projection of any fourth inorganic film layer on the first substrate.

[0023] The orthographic projection of one of the plurality of fourth inorganic films away from the substrate on the first substrate lies within the orthographic projection of one of the fourth inorganic films closer to the substrate on the first substrate, and the area of ​​the orthographic projection of the plurality of fourth inorganic films on the first substrate decreases sequentially along the direction away from the substrate.

[0024] Optionally, the first substrate is a glass substrate.

[0025] Optionally, the first substrate includes a first surface facing the light-emitting unit, a second surface facing away from the light-emitting unit, and a first side surface located between the first surface and the second surface;

[0026] The first side includes a cut portion and a fracture portion. The cut portion shows ablation marks from laser cutting, and the fracture portion shows marks from stress fracture.

[0027] Optionally, the fracture portion includes a first sub-fracture portion and a second sub-fracture portion;

[0028] In the direction from the first surface to the second surface, the first sub-fracture portion, the cutting portion, and the second sub-fracture portion are stacked sequentially.

[0029] Optionally, the light-emitting component includes: a dam component, the dam component being ring-shaped;

[0030] The dam assembly is located between the light-emitting part and the driving circuit, and the dam assembly surrounds the first electrode, the second electrode, the third electrode and the fourth electrode;

[0031] Wherein, the orthographic projection of the damming component on the first substrate lies within the orthographic projection of the organic film layer on the first substrate.

[0032] Optionally, the organic film layer includes a third surface, a fourth surface, and a second side surface located between the third surface and the fourth surface;

[0033] The third surface is closer to the first substrate than the fourth surface, and the orthographic projection of the dam assembly on the first substrate lies within the orthographic projection of the third surface on the first substrate.

[0034] Optionally, the dam assembly includes: a first dam section and a second dam section;

[0035] The first dam portion is located on the side of the light-emitting portion away from the first substrate and is in contact with the light-emitting portion. The second dam portion is located on the side of the driving circuit facing the light-emitting unit and is in contact with the driving circuit. The first dam portion and the second dam portion cooperate with each other to form a sealed space surrounding each electrode.

[0036] Optionally, the first dam section, the first electrode, and the second electrode are made of the same material and prepared using the same patterning process.

[0037] The second dam section, the third electrode, and the fourth electrode are made of the same material and are prepared using the same patterning process.

[0038] Optionally, the light-emitting part includes: a first semiconductor layer, and a sub-light-emitting functional layer located on one side of the first semiconductor layer;

[0039] The first semiconductor layer includes: a connection portion corresponding to the sub-light-emitting functional layer, and an auxiliary portion connected to the connection portion. The connection portion is connected to the sub-light-emitting functional layer, and the auxiliary portion and the connection portion are integral structures.

[0040] Optionally, the orthographic projection of the driving circuit on the first substrate is located within the orthographic projection of the first semiconductor layer on the first substrate.

[0041] Optionally, the first electrode is connected to the first semiconductor layer;

[0042] The auxiliary part includes a first auxiliary part and a second auxiliary part; the orthographic projection of the first auxiliary part on the first substrate overlaps with the orthographic projection of the first electrode on the first substrate; the second auxiliary part is located between the first auxiliary part and the connecting part; the material of the auxiliary part is the same as the material of the connecting part;

[0043] The sub-light-emitting functional layer includes: a second semiconductor layer and a light-emitting layer; the light-emitting layer, the second semiconductor layer and the second electrode are stacked in a direction away from the first substrate; wherein the light-emitting layer is connected to the connection portion in the first semiconductor layer.

[0044] Optionally, the light-emitting unit includes a first sub-light-emitting unit of a first color, a second sub-light-emitting unit of a second color, and a third sub-light-emitting unit of a third color, wherein the first color, the second color, and the third color are different from each other;

[0045] The light-emitting unit includes a first sub-light-emitting unit, a first electrode shared by the second sub-light-emitting unit and the third sub-light-emitting unit, a second electrode of the first sub-light-emitting unit, a second electrode of the second sub-light-emitting unit, and a second electrode of the third sub-light-emitting unit.

[0046] Optionally, the driving circuit includes a pixel circuit, the pixel circuit including a plurality of thin-film transistors and at least one storage capacitor, the thin-film transistor including a gate, a source and a drain; the driving circuit includes: a substrate, a connection pad located within the substrate, and a first passivation layer, a connection wiring layer, a barrier layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source and drain layer, a planarization layer, a second passivation layer and a third passivation layer located on the substrate and stacked sequentially in a direction away from the substrate;

[0047] The connection routing layer includes multiple connection traces, and the connection traces are connected to the connection pads and the pixel circuits;

[0048] The active layer includes multiple active patterns corresponding to the plurality of thin-film transistors, and each active pattern includes a source region, a drain region, and a channel region.

[0049] The gate layer includes a plurality of gate patterns corresponding to the plurality of thin-film transistors. The orthographic projection of the gate pattern on the substrate and the orthographic projection of the active pattern on the substrate partially overlap. The portion of the active pattern located in the overlapping region is the channel region of the thin-film transistor.

[0050] The source-drain layer includes the source and drain of the plurality of thin-film transistors, wherein the source and source region of the thin-film transistors are connected, and the drain and drain region of the thin-film transistors are connected.

[0051] The third electrode and the fourth electrode are located between the second passivation layer and the third passivation layer. The third passivation layer has a first via and a second via. The first via is used to expose a portion of the third electrode, and the second via is used to expose a portion of the fourth electrode.

[0052] The organic film layer includes the planarization layer, and the first inorganic film layer includes the second passivation layer.

[0053] Optionally, the third passivation layer wraps around the edge of the third electrode and also around the edge of the fourth electrode.

[0054] Optionally, the light-emitting component further includes a plurality of pins located on the side of the driving unit away from the light-emitting unit, the pins being electrically connected to the driving circuit.

[0055] On the other hand, a method for fabricating a light-emitting component is provided, the method comprising:

[0056] A light-emitting substrate is obtained, the light-emitting substrate including a first mother substrate and a plurality of light-emitting units located on one side of the first mother substrate, the light-emitting unit including a first electrode, a second electrode and a light-emitting part electrically connected to the first electrode and the second electrode respectively; any two adjacent light-emitting units among the plurality of light-emitting units have a first interval between their orthographic projections on the second mother substrate;

[0057] A driving substrate is obtained, the driving substrate including a second mother substrate and a plurality of driving units located on one side of the second mother substrate, the driving unit including a third electrode, a fourth electrode and a driving circuit electrically connected to the third electrode and the fourth electrode respectively; any two adjacent driving units among the plurality of driving units have a second interval between their orthographic projections on the second mother substrate;

[0058] The light-emitting unit and the driving unit are bonded together using a bonding process, so that the third electrode and the first electrode are electrically connected, and the fourth electrode and the second electrode are electrically connected.

[0059] The second mother substrate is removed by a peeling process, and the first mother substrate is cut by a cutting process to obtain multiple independent light-emitting components.

[0060] In another aspect, a display substrate is provided, the display substrate including: a driving backplate and a plurality of light-emitting components as described above, wherein the light-emitting components are arranged in an array on the driving backplate, the driving backplate is electrically connected to the light-emitting components and provides driving signals to the light-emitting components. Attached Figure Description

[0061] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0062] Figure 1 is a schematic diagram of the structure of a light-emitting component provided in an embodiment of this application;

[0063] Figure 2 is a schematic diagram of another light-emitting component provided in an embodiment of this application;

[0064] Figure 3 is a schematic diagram of the side of a first substrate provided in an embodiment of this application;

[0065] Figure 4 is a schematic diagram of a light-emitting unit and a first dam provided in an embodiment of this application;

[0066] Figure 5 is a schematic diagram of another driving unit and a second dam provided in an embodiment of this application;

[0067] Figure 6 is a schematic diagram of the structure of a light-emitting unit provided in an embodiment of this application;

[0068] Figure 7 is a top view of a first semiconductor layer provided in an embodiment of this application;

[0069] Figure 8 is a top view of another first semiconductor layer provided in an embodiment of this application;

[0070] Figure 9 is a schematic diagram of another light-emitting unit provided in an embodiment of this application;

[0071] Figure 10 is a top view of a light-emitting unit provided in an embodiment of this application;

[0072] Figure 11 is a schematic diagram of the film structure of the light-emitting unit at A-A' shown in Figure 10;

[0073] Figure 12 is a schematic diagram of the film structure of the light-emitting unit at B-B' shown in Figure 10;

[0074] Figure 13 is a schematic diagram of the structure of a driving unit provided in an embodiment of this application;

[0075] Figure 14 is a schematic diagram of another driving unit provided in an embodiment of this application;

[0076] Figure 15 is a schematic diagram of another light-emitting component provided in an embodiment of this application;

[0077] Figure 16 is a flowchart of a method for fabricating a light-emitting component according to an embodiment of this application;

[0078] Figure 17 is a partial structural schematic diagram of a light-emitting substrate provided in an embodiment of this application;

[0079] Figure 18 is a partial structural schematic diagram of a driving substrate provided in an embodiment of this application;

[0080] Figure 19 is a partial schematic diagram of the driving substrate shown in Figure 18;

[0081] Figure 20 is a schematic diagram of forming a second inorganic thin film, an organic film layer, and a first inorganic thin film according to an embodiment of this application;

[0082] Figure 21 is a schematic diagram of patterning a second inorganic thin film and a first inorganic thin film according to an embodiment of this application.

[0083] Figure 22 is a schematic diagram of etching a substrate thin film according to an embodiment of this application;

[0084] Figure 23 is a cross-sectional view of Figure 19 along the CC' direction;

[0085] Figure 24 is a schematic diagram of the bonding of a light-emitting unit and a driving unit according to an embodiment of this application;

[0086] Figure 25 is a partial schematic diagram of a light-emitting unit and a driving unit after bonding according to an embodiment of this application;

[0087] Figure 26 is a schematic diagram of removing the second mother substrate according to an embodiment of this application;

[0088] Figure 27 is a schematic diagram of cutting a first mother substrate according to an embodiment of this application;

[0089] Figure 28 is a schematic diagram of the structure of a display substrate provided in an embodiment of this application;

[0090] Figure 29 is a schematic diagram of another display substrate provided in an embodiment of this application. Detailed Implementation

[0091] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0092] In some embodiments, the light-emitting component includes light-emitting units and driving units. A driving backplate can be connected to the driving unit of the light-emitting component to provide a driving signal to the driving unit, so that the driving unit drives the light-emitting units to emit light. The multiple light-emitting components included in the display substrate can be multiple independent light-emitting components obtained by cutting the driving light-emitting structure. The driving light-emitting structure can include a light-emitting substrate and a driving substrate bonded together. The light-emitting substrate includes multiple light-emitting units, and the driving substrate includes multiple driving units. When cutting the driving light-emitting structure, the light-emitting substrate and the driving substrate need to be cut separately to obtain bonded and independent light-emitting units and driving units, i.e., to obtain the light-emitting component.

[0093] However, the sides of the light-emitting components obtained after cutting are exposed, making them prone to absorbing water and oxygen and failing, resulting in a low yield.

[0094] Figure 1 is a schematic diagram of a light-emitting component provided in an embodiment of this application. Referring to Figure 1, the light-emitting component 100 includes: a first substrate 101, a light-emitting unit 102, and a driving unit 103. The light-emitting unit 102 is located on one side of the first substrate 101, and the driving unit 103 is located on the side of the first substrate 101 away from the light-emitting unit 102.

[0095] The light-emitting unit 102 includes a first electrode 1021, a second electrode 1022, and a light-emitting part 1023 that is electrically connected to the first electrode 1021 and the second electrode 1022, respectively.

[0096] The driving unit 103 includes a third electrode 1031, a fourth electrode 1032, and a driving circuit 1033 electrically connected to the third electrode 1031 and the fourth electrode 1032, respectively. The third electrode 1031 and the fourth electrode 1032 are located on the side of the driving circuit 1033 closer to the light-emitting unit 102, that is, the third electrode 1031 and the fourth electrode 1032 are closer to the light-emitting unit 102 relative to the driving circuit 1033. The third electrode 1031 is electrically connected to the first electrode 1021, and the fourth electrode 1032 is electrically connected to the second electrode 1022.

[0097] Referring to Figure 1, the driving circuit 1033 includes a stacked organic film layer 10331 and a first inorganic film layer 10332. The first inorganic film layer 10332 is closer to the light-emitting unit 102 than the organic film layer 10331. The orthographic projection of the first inorganic film layer 10332 on the first substrate 101 covers the orthographic projection of the organic film layer 10331 on the first substrate 101, and the first inorganic film layer 10332 surrounds the edge of the organic film layer 10331.

[0098] The organic film layer 10331 is made of organic materials, and the first inorganic film layer 10332 is made of inorganic materials. Generally, organic materials are more likely to adsorb water and oxygen than inorganic materials. Therefore, in this embodiment, since the organic film layer 10331 is enclosed within the first inorganic film layer 10332, the organic film layer 10331 in the driving circuit 1033 is not exposed. This prevents external water and oxygen from intruding into the interior of the light-emitting component along the organic film layer 10331, thus preventing the light-emitting component 100 from failing due to water and oxygen intrusion and ensuring the yield of the light-emitting component 100.

[0099] In summary, this application provides a light-emitting component, which includes a first substrate and an electrically connected light-emitting unit and a driving unit. In the driving unit, a first inorganic film layer in the driving circuit covers an organic film layer and wraps around the edge of the organic film layer, preventing the organic film layer from being exposed. This prevents external water and oxygen from intruding into the interior of the light-emitting component along the organic film layer, thus preventing the light-emitting component from failing due to water and oxygen intrusion and ensuring the yield of the light-emitting component.

[0100] In the embodiments of this application, the orthographic projection of the light-emitting unit 102 on the first substrate 101 and the orthographic projection of the driving unit 103 on the first substrate 101 are both located within the first substrate 101.

[0101] The light-emitting component 100 can be obtained by cutting the first substrate 101 along the cutting path of the first mother substrate using a cutting process. The orthographic projection of the light-emitting unit 102 and the orthographic projection of the driving unit 103 on the first substrate 101 are both located within the first substrate 101, which can be used to indicate that the orthographic projections of the light-emitting unit 102 and the driving unit 103 on the first mother substrate do not overlap with the cutting path. This avoids cutting the light-emitting unit 102 and the driving unit 103 during the cutting of the first mother substrate, avoids the light-emitting unit 102 and the driving unit 103 being affected by the cutting process, and ensures the yield of the light-emitting unit 102 and the driving unit 103.

[0102] Optionally, the edge of the driving unit 103 projected onto the first substrate 101 has a certain distance from the edge of the first substrate 101, which is greater than 0. This can avoid the cutting process affecting the driving unit 103.

[0103] Referring to Figure 1, the driving circuit 1033 further includes a substrate 10333 and a second inorganic film layer 10334. The second inorganic film layer 10334, the organic film layer 10331, and the first inorganic film layer 10332 are all located on the substrate 10333 and are sequentially stacked in a direction away from the substrate 10333. The orthographic projection of the organic film layer 10331 onto the first substrate 101 lies within the orthographic projection of the second inorganic film layer 10334 onto the first substrate 101. The orthographic projection of the edge of the organic film layer 10331 onto the first substrate 101 is further away from the orthographic projection of the edge of the second inorganic film layer 10334 onto the first substrate 101 than the orthographic projection of the edge of the substrate 10333 onto the first substrate 101.

[0104] That is, the edges of the first inorganic film layer 10332 and the second inorganic film layer 10334 in the driving circuit 1033 are exposed, while the organic film layer 10331 is confined inside the first inorganic film layer 10332 and the second inorganic film layer 10334. Thus, only the edges of the first inorganic film layer 10332 and the second inorganic film layer 10334 are exposed. Since the material of the inorganic film layer does not easily absorb water and oxygen, even if the inorganic film layer is exposed, water and oxygen will not invade and cause the light-emitting component 100 to fail.

[0105] Specifically, the first inorganic film layer 10332 can be a single film layer, that is, the material is the same at each position of the first inorganic film layer 10332 and it is prepared by the same process.

[0106] Specifically, the second inorganic film layer 10334 can be a single film layer, that is, the material at each position of the second inorganic film layer 10334 is the same, and it is prepared by the same process.

[0107] Specifically, the organic film layer 10331 can be a single film layer, that is, the material is the same at all positions of the organic film layer 10331 and it is prepared by the same process.

[0108] In this embodiment, referring to FIG2, the organic film layer 10331 is designed as an island with the light-emitting component 100 as a unit, ensuring that after the light-emitting component is cut, the organic film layer 10331 is covered by the inorganic film layer. Optionally, the organic film layer 10331 may have multiple edges, and the first inorganic film layer 10332 may have multiple edges, and the multiple edges of the organic film layer 10331 may correspond to the multiple edges of the first inorganic film layer 10332. To ensure that the organic film layer 10331 is covered by the inorganic film layer, the orthographic projection of at least one edge of the organic film layer 10331 on the first substrate 101 and the orthographic projection of the corresponding edge of the first inorganic film layer 10332 on the first substrate 101 may be a certain distance c. For example, the orthographic projection of each edge of the organic film layer 10331 on the first substrate 101 and the orthographic projection of the corresponding edge of the first inorganic film layer 10332 on the first substrate 101 may be a certain distance c. 。

[0109] Wherein, distance c represents the distance between the orthographic projection of the edge of the organic film layer 10331 on the side closest to the first substrate 101 on the first substrate 101 and the orthographic projection of the edge of the first inorganic film layer 10332 on the side closest to the first substrate 101 on the first substrate 101. For the sake of simplicity, FIG2 does not show the specific structure of the pixel circuit in the driving unit.

[0110] Optionally, the determination of distance c needs to take into account the alignment accuracy o1 and o2 of the film layer in the production line process, the linewidth variation accuracy x1 and x2, the thickness h of the organic film layer 10331, and the slope angle α of the side of the organic film layer 10331. For example, distance c satisfies:

[0111] Optionally, the distance c can be 7.25 μm (micrometers), but is not limited to this value. Considering process fluctuations and manufacturing capabilities, the distance c can be greater than or equal to 3 μm. That is, the distance c between the orthographic projection of the edge of the organic film layer 10331 on the first substrate 101 and the orthographic projection of the edge of the first inorganic film layer 10332 on the first substrate 101 is greater than or equal to 3 μm.

[0112] Optionally, in order to ensure that the distance c satisfies the above formula (1), the alignment accuracy o1 and o2, as well as the line width variation accuracy x1 and x2, can be taken into account during product design and manufacturing to ensure that the organic film layer 10331 is covered by the inorganic film layer.

[0113] In this embodiment of the application, the orthographic projection of the first inorganic film layer 10332 on the first substrate 101 is located within the orthographic projection of the second inorganic film layer 10334 on the first substrate 101, and the area of ​​the orthographic projection of the first inorganic film layer 10332 on the first substrate 101 is smaller than the area of ​​the orthographic projection of the second inorganic film layer 10334 on the first substrate 101.

[0114] Optionally, the orthographic projection of the first substrate 101 on the substrate 10333 lies within the orthographic projection of the second inorganic film layer 10334 on the first substrate 101. That is, the orthographic projection of the first substrate 101 on the substrate 10333 lies within the orthographic projection of the inorganic film layer 10332 and the second inorganic film layer 10334, which has the larger area of ​​the orthographic projection on the first substrate 101.

[0115] Optionally, the substrate 10333 can be prepared using the target inorganic film layer as a hard mask. The preparation process may include: using the second inorganic film layer as a mask to etch the portion of the substrate 10333 not covered by the second inorganic film layer, thereby retaining the portion of the substrate 10333 covered by the second inorganic film layer. To ensure that the substrate 10333 can be etched through, the edge of the substrate 10333 can be recessed relative to the edge of the second inorganic film layer. Of course, the edge of the substrate 10333 does not need to be recessed relative to the edge of the second inorganic edge 10334; this embodiment does not limit this.

[0116] Optionally, the orthographic projection of the substrate 10333 on the first substrate 101 is located within the orthographic projection of the second inorganic film layer 10334 on the first substrate 101, and the area of ​​the orthographic projection of the substrate 10333 on the first substrate 101 is less than or equal to the area of ​​the orthographic projection of the second inorganic film layer 10334 on the first substrate 101.

[0117] For example, the side edge of substrate 10333 may be perpendicular to the surface of substrate 10333. The orthographic projection of the edge of the second inorganic film layer 10334 on the side of substrate 10333 near substrate 10333 may overlap with the side edge of substrate 10333.

[0118] In this embodiment, the edges of the first inorganic film layer 10332 and the second inorganic film layer 10334 can be formed using the same process. The same process can refer to using the same mask for exposure, development, and etching. During etching, the first inorganic film layer 10332 and the second inorganic film layer 10334 can be etched in sequence.

[0119] Therefore, due to the etching process, the orthographic projection of the first inorganic film layer 10332 on the first substrate 101 lies within the orthographic projection of the second inorganic film layer 10334 on the first substrate 101. Furthermore, the angle β1 between the side edge of the first inorganic film layer 10332 and the surface of the substrate 10333 is acute, and the angle β2 between the side edge of the second inorganic film layer 10334 and the surface of the substrate 10333 is also acute. Here, the acute angle refers to the angle on the side where the inorganic film layer is located. The angle β1 on the side where the first inorganic film layer 10333 is located can refer to the angle between the side edge of the solid portion of the first inorganic film layer 10332 and the surface of the substrate 10333. The angle β2 on the side where the second inorganic film layer 10334 is located can refer to the angle between the side edge of the solid portion of the second inorganic film layer 10334 and the surface of the substrate 10333.

[0120] Optionally, the edges of the first inorganic film layer 10332 and the second inorganic film layer 10334 can form stepped edges. Referring to Figure 1, the stepped edge includes a side edge a1 of the first inorganic film layer 10332, a surface a2 of the second inorganic film layer 10334 exposed by the first inorganic film layer 10332, and a side edge a3 of the second inorganic film layer 10334. One end of the side edge a1 of the first inorganic film layer 10332 is connected to one end of the surface a2, and the other end of the surface a2 is connected to one end of the side edge a3 of the second inorganic film layer 10334. The surface a2 can be parallel to the surface of the substrate 10333. Optionally, both the side edge a1 of the first inorganic film layer 10332 and the side edge a3 of the second inorganic film layer 10333 can be sloped edges.

[0121] Optionally, the surface a2 of the second inorganic film layer 10334 exposed by the first inorganic film layer 10332 can be a plane, which can be parallel to the surface of the substrate 10333.

[0122] Optionally, the included angle β1 between the side edge of the first inorganic film layer 10332 and the surface of the substrate 10333 may be equal to or unequal to the included angle β2 between the side edge of the second inorganic film layer 10334 and the surface of the substrate 10333. This application embodiment does not limit this.

[0123] Optionally, the included angle β1 between the side edge of the first inorganic film layer 10332 and the surface of the substrate 10333, and the included angle β2 between the side edge of the second inorganic film layer 10334 and the surface of the substrate 10333 can be in the range of 30 degrees to 60 degrees.

[0124] Here, angles β1 and β2 are both angles formed after removing the inorganic material at the dicing location. The process for removing the inorganic material at the dicing location can be a patterning process (photoresist coating, exposure, development, etching, and photoresist removal). The angles β1 and β2 obtained after this process are approximately in the range of 30 to 60 degrees, for example, 45 degrees.

[0125] In this embodiment, the first substrate 101 can be a glass substrate. Since the first substrate 101 is obtained by cutting a first mother substrate, the first mother substrate can be a glass mother substrate. After cutting the glass mother substrate, the resulting first substrate 101 can include a first surface facing the light-emitting unit 102, a second surface facing away from the light-emitting unit 102, and a first side surface located between the first surface and the second surface.

[0126] Optionally, the glass substrate can be cut using a laser-guided cutting method. During the cutting process, the laser beam can be focused onto the center of the glass substrate along its thickness, causing the center to melt or vaporize. Then, a tool can be used to apply force to the upper and / or lower surfaces of the glass substrate, allowing the portion belonging to the first substrate 101 of the single light-emitting component to be separated. It should be noted that because the laser beam reaches the center of the glass substrate during this process, no extra debris (e.g., cutting sparks) will be generated and sputtered onto the light-emitting unit 102, ensuring the reliability of the light-emitting component 100.

[0127] Optionally, the first side surface of the first substrate 101 obtained after cutting the glass mother substrate can be a fracture surface. The fracture surface includes a cut portion S1 and a fracture portion S2. The cut portion S1 shows ablation marks from laser cutting, and the fracture portion S2 shows marks from stress fracture.

[0128] Referring to Figure 3, the fracture portion S2 includes a first sub-fracture portion S21 and a second sub-fracture portion S22. In the direction from the first surface M1 to the second surface M2, the first sub-fracture portion S21, the cutting portion S1, and the second sub-fracture portion S22 are stacked sequentially. That is, the cutting portion S1 can be located between the first sub-fracture portion S21 and the second sub-fracture portion S22.

[0129] In this embodiment, during the cutting of the glass substrate, the laser cutting beam is focused at the center of the glass substrate. Therefore, an ablation mark from the laser cutting will appear at the center of the first side surface of the first substrate 101 in the single light-emitting component obtained after cutting the glass substrate. Furthermore, during the cutting process, after the laser cutting beam melts or vaporizes the center of the glass substrate, a cutting blade is needed to apply force to the upper and / or lower surfaces of the glass substrate to achieve cutting. Therefore, stress fracture marks will appear on both sides of the ablation mark on the first side surface of the first substrate 101 in the single light-emitting component obtained after cutting the glass substrate.

[0130] It should be noted that, for the first substrate 101 in a single light-emitting component 100 obtained by cutting, the middle position of the first side surface of the first substrate 101 will show laser cutting ablation marks, and both sides of the middle position of the first side surface of the first substrate 101 will show fracture marks. Therefore, the first side surface of the first substrate 101 is not a complete plane. Consequently, the distance between the outer contour of the first substrate 101 and the outer contours of other film layers (e.g., the film layers in the light-emitting part 1023) is not a fixed value. Therefore, this application can define the distance between the edge of the first substrate 101 and the edge of other film layers as the average distance between the edge of the first substrate 101 and the edge of other film layers.

[0131] In this embodiment of the application, referring to FIG2, and FIGS. 4 and 5, the light-emitting component 100 includes a dam assembly 104. The dam assembly 104 is annular. The dam assembly 104 is located between the light-emitting part 1023 and the driving circuit 1033, and the dam assembly 104 surrounds the first electrode 1021, the second electrode 1022, the third electrode 1031, and the fourth electrode 1032. That is, the first electrode 1021, the second electrode 1022, the third electrode 1031, and the fourth electrode 1032 are all surrounded by the dam assembly 104.

[0132] The flatness of the region of the driving circuit 1033 including the organic film layer 10331 near the surface of the light-emitting unit 102 is better than that of the region not including the organic film layer 10331 near the surface of the light-emitting unit 102. Therefore, in order to ensure the reliability of the dam assembly 104, the orthographic projection of the dam assembly 104 on the first substrate 101 can be located within the orthographic projection of the organic film layer 10331 on the first substrate 101.

[0133] Optionally, the organic film layer 10331 includes a third surface M3, a fourth surface M4, and a second side surface S3 located between the third surface M3 and the fourth surface M4. The third surface M3 is closer to the first substrate 101 than the fourth surface M4.

[0134] For example, the orthographic projection of the third surface M3 on the first substrate 101 is located within the orthographic projection of the fourth surface M4 on the first substrate 101, and the area of ​​the orthographic projection of the third surface M3 on the first substrate 101 is smaller than the area of ​​the orthographic projection of the fourth surface M4 on the first substrate 101.

[0135] Since the second side S3 of the organic film layer 10331 is also usually sloping, in order to make the dam assembly 104 disposed on the second side S3 on a flat surface, the orthographic projection of the dam assembly 104 on the first substrate 101 can be located within the orthographic projection of the third surface M3 on the first substrate 101.

[0136] Optionally, the dam assembly 104 includes a first dam portion 1041 and a second dam portion 1042, both of which are annular. The orthographic projection of the dam assembly 104 on the first substrate 101 being within the orthographic projection of the organic film layer 10331 on the first substrate 101 can be used to indicate that: the orthographic projection of the first dam portion 1041 on the first substrate 101 is within the orthographic projection of the organic film layer 10331 on the first substrate 101, and the orthographic projection of the second dam portion 1042 on the first substrate 101 is within the orthographic projection of the organic film layer 10331 on the first substrate 101.

[0137] Optionally, the orthographic projection of the first dam portion 1041 on the first substrate 101 is located within the orthographic projection of the third surface M3 of the organic film layer 10331 on the first substrate 101, and the orthographic projection of the second dam portion 1042 on the first substrate 101 is located within the orthographic projection of the third surface M3 of the organic film layer 10331 on the first substrate 101.

[0138] The first dam portion 1041 is located on the side of the light-emitting portion 1023 away from the first substrate 101 and is in contact with the light-emitting portion 1023. The second dam portion 1042 is located on the side of the driving circuit 1033 facing the light-emitting unit 102 and is in contact with the driving circuit 1033. The first dam portion 1041 and the second dam portion 1042 cooperate and are bonded together to form a sealed space surrounding each electrode. The first electrode 1021, the second electrode 1022, the third electrode 1031, and the fourth electrode 1032 are all located within the sealed space, which not only encapsulates each electrode but also increases the support area between the light-emitting unit 102 and the driving unit 103.

[0139] Optionally, the orthographic projection of the edge of the dam assembly 104 away from the surrounding electrodes on the first substrate 101 can overlap with the orthographic projection of the edge of the third surface of the organic film layer 10331 on the first substrate 101. Alternatively, referring to FIG2, the orthographic projection of the edge of the dam assembly 104 away from the surrounding electrodes on the first substrate 101 is a certain distance 'a' between it and the orthographic projection of the edge of the third surface of the organic film layer 10331 on the first substrate 101. This ensures that the orthographic projection of the dam assembly 104 on the first substrate 101 lies within the orthographic projection of the third surface M3 on the first substrate 101, thus ensuring that the dam assembly 104 is formed on the flat surface of the drive circuit 1033.

[0140] Optionally, the dam assembly 104 has multiple edges on the side away from the surrounding electrodes, and the organic film layer 10331 has multiple edges, with the multiple edges of the dam assembly 104 on the side away from the surrounding electrodes corresponding to the multiple edges of the organic film layer 10331. To ensure that the orthographic projection of the dam assembly 104 on the first substrate 101 lies within the orthographic projection of the third surface M3 on the first substrate 101, a certain distance 'a' can be made between the orthographic projection of at least one edge of the dam assembly 104 on the side away from the surrounding electrodes on the first substrate 101 and the orthographic projection of a corresponding edge in the organic film layer 10331 on the first substrate 101. For example, a certain distance 'a' can be made between the orthographic projection of each edge of the dam assembly 104 on the side away from the surrounding electrodes on the first substrate 101 and the orthographic projection of the corresponding edge in the organic film layer 10331 on the first substrate 101.

[0141] Wherein, distance 'a' represents the orthographic projection on the first substrate 101 of the edge of the dam assembly 104 away from the surrounding electrodes, and the orthographic projection on the first substrate 101 of the edge of the organic film layer 10331 on the side closest to the first substrate 101. That is, distance 'a' is the distance on the first substrate 101 of the orthographic projection of the edge of the dam assembly away from the surrounding electrodes, and the orthographic projection on the first substrate 101 of the junction of the third surface M3 and the second side surface S3 of the organic film layer 10333. The determination of distance 'a' must also consider the film layer alignment accuracies o1 and o2, and the linewidth variation accuracies x1 and x2, of the production line process. For example, distance 'a' satisfies:

[0142] Optionally, the distance a can be 7.25 μm, but is not limited to this value. Considering process fluctuations and process capabilities, the distance a can be greater than or equal to 1 μm. That is, the distance a between the orthographic projection of the edge of the organic film layer 10331 on the first substrate 101 and the orthographic projection of the edge of the first inorganic film layer 10332 on the first substrate 101 is greater than or equal to 1 μm.

[0143] Optionally, in order to make the distance a satisfy the above formula (2), the alignment accuracy o1 and o2, as well as the line width variation accuracy x1 and x2 can be taken into account during product design and manufacturing, so that the dam assembly 104 can be located on a flat surface.

[0144] Of course, if the light-emitting component 100 does not have a dam component 104, the orthographic projection of the organic film layer 10331 on the first substrate 101 must at least cover the orthographic projection of each electrode on the first substrate 101, so as to ensure that each electrode is placed on a flat surface, which is conducive to the bonding between electrodes.

[0145] It should be noted that, since the organic film layer 10331 has a certain thickness (approximately 2 μm), the distance between the portion of the driving circuit 1033 including the organic film layer 10331 and the light-emitting part 1023 is smaller than the distance between the portion of the driving circuit 1033 excluding the organic film layer 10331 and the light-emitting part 1023. In other words, the gap between the portion of the driving circuit 1033 excluding the organic film layer 10331 and the light-emitting part 1023 is relatively large. Therefore, to reduce the risk of other liquids entering the device through the gap between the driving circuit 1033 and the light-emitting part 1023 during subsequent processes, the distance c between the organic film layer 10331 and the first organic film layer 10331 can be made as large as possible while meeting the above conditions, thereby reducing the area occupied by the portion of the driving circuit 1033 excluding the organic film layer 10331 and ensuring the device's functionality.

[0146] Optionally, the first dam portion 1041, the first electrode 1021, and the second electrode 1022 can be made of the same material and fabricated using the same patterning process. Similarly, the second dam portion 1042, the third electrode 1031, and the fourth electrode 1032 can be made of the same material and fabricated using the same patterning process. For example, the first dam portion 1041 and the second dam portion 1042 can be made of metal, and they can be directly bonded together to form a sealed space.

[0147] In this embodiment of the application, referring to FIG2, the driving circuit 1033 further includes a third inorganic film layer 10335 located on the side of the first inorganic film layer 10332 away from the substrate 10333, and a plurality of fourth inorganic film layers 10336 located between the second inorganic film layer 10334 and the substrate 10333. That is, the plurality of fourth inorganic film layers 10336, the second inorganic film layer 10334, the organic film layer 10331, the first inorganic film layer 10332, and the third inorganic film layer 10335 are sequentially stacked in a direction away from the substrate 10333.

[0148] Specifically, the third inorganic film layer 10335 can be a single film layer, that is, the material at each position of the third inorganic film layer 10335 is the same, and it is prepared by the same process.

[0149] Specifically, each fourth inorganic film layer 10336 can be a single film layer, that is, the material at each position of each fourth inorganic film layer 10336 is the same, and it is prepared by the same process.

[0150] Optionally, the orthographic projection of the third inorganic film layer 10335 on the first substrate 101 is located within the orthographic projection of the first inorganic film layer 10332 on the first substrate 101, and the area of ​​the orthographic projection of the third inorganic film layer 10335 on the first substrate 101 is smaller than the area of ​​the orthographic projection of the first inorganic film layer 10332 on the first substrate 101.

[0151] The orthographic projection of the second inorganic film layer 10334 on the first substrate 101 lies within the orthographic projection of any of the fourth inorganic film layers 10336 on the first substrate 101, and the area of ​​the orthographic projection of the second inorganic film layer 10334 on the first substrate 101 is smaller than the area of ​​the orthographic projection of any of the fourth inorganic film layers on the first substrate 101.

[0152] The orthographic projection of one of the fourth inorganic film layers 10336, which is farther from the substrate, on the first substrate 101 is located within the orthographic projection of one of the fourth inorganic film layers, which is closer to the substrate, on the first substrate 101, and the area of ​​the orthographic projection of the multiple fourth inorganic film layers 10336 on the first substrate 101 decreases sequentially along the direction away from the substrate 10333.

[0153] For example, the edges of the multiple fourth inorganic film layers 10336, the second inorganic film layer 10334, the first inorganic film layer 10332, and the third inorganic film layer 10335 form a stepped edge.

[0154] Figure 6 is a schematic diagram of a light-emitting unit provided in an embodiment of this application. Referring to Figure 6, the light-emitting part 1023 includes: a first semiconductor layer 10231, and a sub-light-emitting functional layer 1023a located on one side of the first semiconductor layer 10231. Referring to Figure 7, the first semiconductor layer 10231 includes: a connecting part 102311 corresponding to the sub-light-emitting functional layer 1023a, and an auxiliary part 102312 connected to the connecting part 102311.

[0155] The connecting portion 102311 is connected to the sub-light-emitting functional layer 1023a. The outer boundary of the orthographic projection of the connecting portion 102311 on the first substrate 101 can completely coincide with the outer boundary of the orthographic projection of the sub-light-emitting functional layer 1023a on the first substrate 101.

[0156] In this embodiment, the connection portion 102311 and the auxiliary portion 102312 in the first semiconductor layer 10231 are integrally formed, and the material of the connection portion 102311 in the first semiconductor layer 10231 can be the same as the material of the auxiliary portion 102312. It is understood that the connection portion 102311 and the auxiliary portion 102312 in the first semiconductor layer 10231 are arranged in a direction parallel to the extension surface of the first substrate 101, and the first semiconductor layer 10231 is a planar structure formed as a single layer. All portions of the first semiconductor layer 10231 except for the connection portion 102311 are auxiliary portions 102312.

[0157] Optionally, the first substrate 101 is a substrate located on the side of the light-emitting unit 102 away from the driving unit 103, obtained by cutting from the first mother substrate. In order not to affect the performance of the light-emitting unit 102 during cutting, the first semiconductor layer 10231 of the light-emitting portion 1023 in the light-emitting unit 102 is usually not cut. Therefore, in order to avoid affecting the driving circuit 1033 during cutting, the orthographic projection of the driving circuit 1033 on the first substrate 101 can also be located within the orthographic projection of the first semiconductor layer 10231 on the first substrate 101.

[0158] Moreover, the film layers included in the driving unit 103 are all flexible. The rigidity range of the light-emitting component 100 obtained after cutting the first mother substrate is the range of the first semiconductor layer 10231. Therefore, by placing the driving circuit 1033 within the orthographic projection of the first semiconductor layer 10231, deformation of the film layers in the driving circuit 1033 can be avoided.

[0159] In this embodiment of the application, referring to FIG6, the first electrode 1021 may be connected to the first semiconductor layer 10231. Referring to FIG8, the auxiliary part 102312 includes a first auxiliary part 102312a and a second auxiliary part 102312b.

[0160] The orthographic projection of the first auxiliary part 102312a onto the first substrate 101 may overlap with the orthographic projection of the first electrode 1021 onto the first substrate 101. For example, the outer boundary of the orthographic projection of the first auxiliary part 102312a onto the first substrate 101 coincides with the outer boundary of the orthographic projection of the first electrode 1021 onto the first substrate 101. The second auxiliary part 102312b may be located between the first auxiliary part 102312a and the connecting part 102311.

[0161] The sub-light-emitting functional layer 1023a may include a light-emitting layer 10232 and a second semiconductor layer 10233 stacked on the first substrate 101 in a direction away from the first substrate 101. Specifically, the light-emitting layer 10232, the second semiconductor layer 10233, and the second electrode 1022 are stacked in a direction away from the first substrate 101. That is, the light-emitting layer 10232 in the sub-light-emitting functional layer 1023a is closer to the first semiconductor layer 10231 than the second electrode 1022.

[0162] In this sub-light-emitting functional layer 1023a, the light-emitting layer 10232 can be connected to the connection portion 102311 in the first semiconductor layer 10231. Since the first semiconductor layer 10231 is located as the light-emitting layer of the sub-light-emitting functional layer 1023a, and the first semiconductor layer 10231 is closer to the first substrate 101 than the sub-light-emitting functional layer 1023a, the first semiconductor layer 10231 can contact the side of the light-emitting layer 10232 in the sub-light-emitting functional layer 1023a that is away from the second semiconductor layer 10233.

[0163] In this embodiment, the light-emitting unit 102 may include a first sub-light-emitting unit of a first color, a second sub-light-emitting unit of a second color, and a third sub-light-emitting unit of a third color. The first color, the second color, and the third color are all different. For example, the first color is red (R), the second color is green (G), and the third color is blue (B). Optionally, the light-emitting unit 102 may be an RGB three-in-one light-emitting unit 102.

[0164] In this case, the light-emitting portion 1023 may include a plurality of sub-light-emitting functional layers 1023a. Correspondingly, the first semiconductor layer 10231 may include a plurality of connection portions 102311 corresponding to the plurality of sub-light-emitting functional layers 1023a.

[0165] Optionally, the plurality of sub-light-emitting functional layers 1023a include a first sub-light-emitting functional layer, a second sub-light-emitting functional layer, and a third sub-light-emitting functional layer. The first sub-light-emitting functional layer can be the light-emitting functional layer of a first sub-light-emitting unit, the second sub-light-emitting functional layer can be the light-emitting functional layer of a second sub-light-emitting unit, and the third sub-light-emitting functional layer can be the light-emitting functional layer of a third sub-light-emitting unit. The first semiconductor layer 10231 includes a first connection portion corresponding to the first sub-light-emitting functional layer, a second connection portion corresponding to the second sub-light-emitting functional layer, and a third connection portion corresponding to the third sub-light-emitting functional layer.

[0166] In this case, referring to FIG8, a portion of the second auxiliary portion 102312b of the first semiconductor layer 10231 is located between the first auxiliary portion 102312a and each connecting portion 102311, and another portion may be located between adjacent connecting portions 102311.

[0167] Optionally, the auxiliary portion 102312 may further include a third auxiliary portion 102312c, which may surround the first auxiliary portion 102312a, the second auxiliary portion 102312b, and the plurality of connecting portions 102311. Thus, the first auxiliary portion 102312a, the second auxiliary portion 102312b, the third auxiliary portion 102312c, and the plurality of connecting portions 102311 in the first semiconductor layer 10231 can form a planar structure disposed in an entire layer.

[0168] Optionally, the first electrode 1021 of the multiple sub-light-emitting units included in the light-emitting unit 102 can be a shared electrode, and the second electrode 1022 can be an independent electrode. For example, referring to FIG6, the light-emitting unit 102 includes a first electrode 1021 shared by the first sub-light-emitting unit, the second sub-light-emitting unit, and the third sub-light-emitting unit, as well as second electrodes 1022 of the first sub-light-emitting unit, the second sub-light-emitting unit, and the third sub-light-emitting unit. That is, the light-emitting unit 102 includes one first electrode 1021 and three second electrodes 1022, for a total of four electrodes. Furthermore, referring to FIG4, it can be seen that the first dam portion 1041 in the dam assembly 104 can surround each electrode included in the light-emitting unit 102.

[0169] Optionally, in the light-emitting unit 102, the material of the second semiconductor layer 10233 in each sub-light-emitting functional layer 1023a may include p-type doped gallium nitride (p-GaN). The light-emitting layer 10232 in each sub-light-emitting functional layer 1023a may be a multiple quantum well layer (MQW). As shown in FIG6, the first semiconductor layer 10231 may include a first sub-layer 10231a and a second sub-layer 10231b stacked along a direction perpendicular to and toward the first substrate 101. That is, the second sub-layer 10231b is closer to the first substrate 101 than the first sub-layer 10231a.

[0170] It is understood that the first semiconductor layer 10231 can be divided into an auxiliary portion 102312 and a plurality of connecting portions 102311 in a direction parallel to the extension surface of the first substrate 101, and the first semiconductor layer 10231 can be divided into a first sublayer 10231a and a second sublayer 10231b in a direction perpendicular to the extension surface of the first substrate 101.

[0171] In this design, the first sub-layer 10231a of the first semiconductor layer 10231 can be located between the second sub-layer 10231b and the light-emitting layers 10232 of each sub-light-emitting functional layer 1023a. That is, the first sub-layer 10231a is closer to the light-emitting layers 10232 of each sub-light-emitting functional layer 1023a than the second sub-layer 10231b. Here, the material of the first sub-layer 10231a in the first semiconductor layer 10231 can be N-type doped gallium nitride (N-GaN), and the second sub-layer 10231b in the first semiconductor layer 10231 can be a gallium nitride buffer layer (buffer-GaN).

[0172] In this case, in the light-emitting unit 102, after the first electrode 1021 is loaded with a cathode signal, if the second electrode 1022 in a certain sub-light-emitting functional layer 1023a is loaded with an anode signal, then the light-emitting layer 10232 in this sub-light-emitting functional layer 1023a can emit light.

[0173] In this embodiment, each sub-light-emitting functional layer 1023a in the light-emitting unit 102 may further include a current spreading layer 10234 located between the second electrode 1022 and the second semiconductor layer 10233. Here, one side of the current spreading layer 10234 in each sub-light-emitting functional layer 1023a may be in contact with the second semiconductor layer 10233, and the other side may be electrically connected to the second electrode 1022. Optionally, the material of the current spreading layer 10234 is ITO (indium tin oxide). Providing the current spreading layer 10234 in the sub-light-emitting functional layer 1023a facilitates hole transport and improves the electrical performance of the light-emitting component 100.

[0174] In this embodiment of the application, referring to FIG6, the light-emitting unit 102 may further include a common electrode layer 10235 disposed in contact with the first semiconductor layer 10231, the side of the common electrode layer 10235 facing away from the first substrate 101 being electrically connected to the first electrode 1021. Here, the first electrode 1021 may be disposed in the same layer and made of the same material as the second electrodes 1022 in each sub-light-emitting functional layer 1023a, that is, the first electrode 1021 and each of the second electrodes 1022 are formed using the same patterning process.

[0175] The light-emitting unit 102 may further include a common electrode layer 10235 disposed in contact with the first semiconductor layer 10231. The side of the common electrode layer 10235 facing away from the first substrate 101 may be electrically connected to the first electrode 1021. Here, the first electrode 1021 may be disposed in the same layer and made of the same material as the second electrodes 1022 in each of the sub-light-emitting functional layers 1023a. That is, the first electrode 1021 and each of the second electrodes 1022 are formed using the same patterning process.

[0176] In this embodiment, the light-emitting unit 102 may further include an insulating protective layer 10236 located on the side of the common electrode layer 10235 and each sub-light-emitting functional layer 1023a facing away from the first semiconductor layer 10231. Here, the insulating protective layer 10236 may have a first connection hole V1 corresponding to the first electrode 1021, and a plurality of second connection holes V2 corresponding to the plurality of second electrodes 1022.

[0177] The first connection hole V1 corresponds to the common electrode layer 10235, and exposes at least a portion of the common electrode layer 10235. The first electrode 1021 can be electrically connected to the common electrode layer 10235 through the first connection hole V1. Multiple second connection holes V2 correspond one-to-one with multiple sub-light-emitting functional layers 1023a, and each second connection hole V2 exposes at least a portion of the current extension layer 10234 in the corresponding sub-light-emitting functional layer 1023a. Each second electrode 1022 can be electrically connected to the current extension layer 10234 in the corresponding sub-light-emitting functional layer 1023a through the corresponding second connection hole V2.

[0178] For example, the common electrode layer 10235 can serve to spread current. For example, both the common electrode layer 10235 and the first electrode 1021 are made of metal.

[0179] Optionally, the thickness of the common electrode layer 10235 can be much greater than the thickness of the current spreading layer 10234. For example, the side of the common electrode layer 10235 facing away from the first semiconductor layer 10231 can be flush with the side of the current spreading layer 10234 facing away from the first semiconductor layer 10231. That is, the thickness of the common electrode layer 10235 can be equal to the sum of the thicknesses of the current spreading layer 10234 1034, the second semiconductor layer 10233, and the light-emitting layer 10232 in the sub-light-emitting functional layer 1023a. In this way, the sides of the second electrode 1022 and the first electrode 1021 facing away from the first substrate 101 are also flush. Since the second electrode 1022 and the first electrode 1021 in the light-emitting unit 102 need to be bonded to the driving unit 103 when the light-emitting unit 102 is subsequently connected to the driving unit 103. Therefore, when the second electrode 10222 and the first electrode 1021 are aligned on the side away from the first substrate 101, the stability of the bonding connection between the light-emitting unit 102 and the driving unit 103 can be guaranteed.

[0180] In this embodiment of the application, referring to Figures 6 and 9, the light-emitting unit 102 further includes a color conversion component 1024. The color conversion component 1024 includes a light-shielding layer 10241, a limiting dam layer 10242, an optical functional layer 10243, and a filter layer 10244.

[0181] The light-shielding layer 10241 in the color conversion component 1024 can be located on one side of the first substrate 101. This light-shielding layer 10241 can have multiple light-transmitting holes K1. Here, the multiple light-transmitting holes K1 can correspond one-to-one with multiple sub-light-emitting functional layers 1023a in the light-emitting unit 102, and the orthographic projection of each light-transmitting hole K1 on the first substrate 101 can overlap with the orthographic projection of the corresponding sub-light-emitting functional layer 1023a on the first substrate 101. For example, the orthographic projection of each sub-light-emitting functional layer 1023a in the light-emitting unit 102 on the first substrate 101 can be located within the orthographic projection of the corresponding light-transmitting hole K1 on the first substrate 101.

[0182] The defining dam layer 10242 in the color conversion component 1024 can be located on the side of the light-shielding layer 10241 facing away from the first substrate 101. This defining dam layer 10242 can have multiple opening regions K2 corresponding one-to-one with multiple light-transmitting holes K1, and these opening regions K2 can also correspond one-to-one with multiple sub-light-emitting functional layers 1023a in the light-emitting unit 102. Here, the orthographic projection of each opening region K2 in the defining dam layer 10242 on the first substrate 101 can overlap with the orthographic projection of the corresponding light-transmitting hole K1 on the first substrate 101, and can also overlap with the orthographic projection of the corresponding sub-light-emitting functional layer 1023a on the first substrate 101. For example, the light-emitting side of each sub-light-emitting functional layer 1023a in the light-emitting unit 102 can face the corresponding opening region K2, and the orthographic projection of each sub-light-emitting functional layer 1023a on the first substrate 101 can be located within the orthographic projection of the corresponding opening region K2 on the first substrate 101. Each opening region K2 in the defined dam layer 10242 can be orthogonally projected onto the first substrate 101 within the orthogonal projection of the corresponding light-transmitting hole K1 onto the first substrate 101.

[0183] In the embodiments of this application, as shown in Figures 10 to 12, Figure 10 is a top view of a light-emitting unit provided in an embodiment of this application, Figure 11 is a schematic diagram of the film structure of the light-emitting unit shown in Figure 10 at A-A', and Figure 12 is a schematic diagram of the film structure of the light-emitting unit shown in Figure 10 at B-B'. When the multiple sub-light-emitting functional layers 1023a in the light-emitting unit 102 may include: a first sub-light-emitting functional layer 1023a1, a second sub-light-emitting functional layer 1023a2, and a third sub-light-emitting functional layer 1023a3, the multiple opening regions K2 in the dam layer 10242 may include: a first opening region K21, a second opening region K22, and a third opening region K23. The first opening region K21 may be disposed opposite to the first sub-light-emitting functional layer, the second opening region K22 may be disposed opposite to the second sub-light-emitting functional layer, and the third opening region K23 may be disposed opposite to the third sub-light-emitting functional layer.

[0184] In this embodiment, the first opening region K21 and the second opening region K22 are arranged in a row along the first direction X, and the second opening region K22 and the third opening region K23 are arranged in a row along the second direction Y. The first direction X and the second direction Y intersect. For example, the first direction X can be perpendicular to the second direction Y. In this embodiment, the area enclosed by the outer contour of the dam layer 10242 is rectangular; the shapes of the first opening region K21, the second opening region K22, and the third opening region K23 are all rectangular.

[0185] The optical functional layer 10243 in the color conversion component 1024 can be located inside the opening region K2 of the defining dam layer 10242. At least a portion of the optical functional layer 10243 is used to convert the color of light entering the optical functional layer 10243. Here, the light emitted from the light-emitting unit 102 can be directed towards the optical functional layer 10243, and after the optical functional layer 10243 converts the color of the light, it is emitted after passing through the through hole of the light-shielding layer 10241.

[0186] Optionally, the optical functional layer 10243 in the color conversion component 1024 may include: a first color conversion part 10243a, a second color conversion part 10243b, and a third color conversion part 10243c. The first color conversion part 10243a may be located within a first opening region K21, the second color conversion part 10243b may be located within a second opening region K22, and the third color conversion part 10243c may be located within a third opening region K23.

[0187] In this configuration, the light emitted from the first sub-emitting functional layer can be directed to the first color conversion unit 10243a, where it is converted into another color. The light emitted from the second sub-emitting functional layer can be directed to the second color conversion unit 10243b, where it is converted into yet another color. The light emitted from the third sub-emitting functional layer can be directed to the third color conversion unit 10243c, where it can be transmitted through or converted by the third color conversion unit 10243c.

[0188] For example, the light-emitting unit 102 may have a red sub-light-emitting unit R, a green sub-light-emitting unit G, and a blue sub-light-emitting unit B. The light emitted by the first sub-light-emitting functional layer 1023a1, the second sub-light-emitting functional layer 1023a2, and the third sub-light-emitting functional layer 1023a3 in the light-emitting unit 102 all include at least one of blue light and ultraviolet light.

[0189] The first color conversion unit 10243a is used to convert the light emitted from the first sub-light-emitting functional layer 1023a1 into red light. For example, the first color conversion unit 10243a includes red quantum dots that convert light into red light. Optionally, the first color conversion unit 10243a also includes scattering particles for scattering light. After the light emitted from the first sub-light-emitting functional layer 1023a1 is incident on the first color conversion unit 10243a distributed within the first opening region K21, the red quantum dots convert the light into red light, and the scattering particles scatter the light and red light, ensuring that more light can be converted into red light by the red quantum dots and that the converted red light has a large emission angle, thus ensuring a large viewing angle for the display substrate integrating the light-emitting unit 102. Therefore, the red sub-pixel unit R in the light-emitting unit 102 may include: the first sub-light-emitting functional layer 1023a1 and the first color conversion unit 10243a.

[0190] The second color conversion unit 10243b is used to convert the light emitted from the second sub-light-emitting functional layer 1023a2 into green light. For example, the second color conversion unit 10243b includes green quantum dots that convert light into green light. Optionally, the second color conversion unit 10243b also includes scattering particles for scattering light. Here, after the light emitted from the second sub-light-emitting functional layer 1023a2 is incident on the second color conversion unit 10243b distributed within the second opening region K22, the green quantum dots convert the light into green light, and the scattering particles scatter the light and green light, ensuring that more light can be converted into green light by the green quantum dots and that the converted green light has a large emission angle, thus ensuring a large viewing angle for the display substrate integrating the light-emitting unit 102. Therefore, the green sub-light-emitting unit G in the light-emitting unit 102 may include: the second sub-light-emitting functional layer 1023a2 and the second color conversion unit 10243b.

[0191] The third color conversion unit 10243c is used to convert the light emitted from the third sub-light-emitting functional layer 1023a3 into blue light or maintain blue light emission. For example, when the light emitted from the third sub-light-emitting functional layer 1023a3 contains only blue light, the third color conversion unit 10243c can be a transparent part or can include blue quantum dots. The transparent part is used for direct transmission of blue light, and the blue quantum dots can be used to convert blue light into blue light of different wavelengths. Optionally, the third color conversion unit 10243c also includes scattering particles that scatter light. Here, after the light emitted from the third sub-light-emitting functional layer 1023a3 is incident on the third color conversion unit 10243c distributed within the third opening region K23, the scattering particles can scatter the light to ensure a large blue light emission angle, thereby ensuring a large viewing angle for the display substrate integrating the light-emitting unit 102. For example, when the light emitted by the third sub-light-emitting functional layer contains ultraviolet light, the third color conversion unit 10243c includes blue quantum dots that convert the light into blue light, or the third color conversion unit 10243c simultaneously contains scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the light emitted by the third sub-light-emitting functional layer is incident on the third color conversion unit 10243c distributed in the third opening region K23, the blue quantum dots can convert the ultraviolet light in the light into blue light, and the scattering particles can scatter the light and blue light, so as to ensure that more ultraviolet light is converted into blue light by the blue quantum dots, and to ensure that the emitted angle of the converted blue light is large, so as to ensure that the display substrate integrating the light-emitting unit 102 has a large viewing angle. For this purpose, the blue sub-light-emitting unit B in the light-emitting unit 102 can include: the third sub-light-emitting functional layer 1023a3 and the third color conversion unit 10243c.

[0192] Optionally, the material of the defining dam layer 10242 in the color conversion component 1024 may include: a light-absorbing organic material or a reflective organic material. Here, the light-absorbing organic material is typically black, which can absorb light emitted from the sides of the optical functional layer 10243; the reflective organic material is typically gray, which can reflect light emitted from the sides of the optical functional layer 10243.

[0193] The filter layer 10244 may include a plurality of filter units corresponding one-to-one with a plurality of light-transmitting holes K1, wherein the orthographic projection of each filter unit on the first substrate 101 may overlap with the orthographic projection of the corresponding light-transmitting hole K1 on the first substrate 101.

[0194] For example, the multiple filter units in the filter layer 10244 may include: a first filter unit 10244a, a second filter unit 10244b, and a third filter unit 10244c. Here, the first filter unit 10244a may be correspondingly configured with the first color conversion unit 10243a, the second filter unit 10244b may be correspondingly configured with the second color conversion unit 10243b, and the third filter unit 10244c may be correspondingly configured with the third color conversion unit 10243c. Therefore, the red sub-emitting unit R in the light-emitting unit 102 may further include: the first filter unit 10244a; the green sub-emitting unit G in the light-emitting unit 102 may further include: the second filter unit 10244b; and the blue sub-emitting unit B in the light-emitting unit 102 may further include: the third filter unit 10244c.

[0195] For example, the light emitted by the first sub-light-emitting functional layer, the second sub-light-emitting functional layer, and the third sub-light-emitting functional layer in the light-emitting unit 102 is all blue light. The first filter unit 10244a can be a red color block, which can transmit red light and absorb other colors of light. In this way, the light emitted from the first color conversion unit 10243a can pass through the first filter unit 10244a before being emitted, and the first filter unit 10244a can filter out light of colors other than red light, so as to ensure that the red sub-light-emitting unit R in the light-emitting unit 102 can filter out the blue light component. It should be noted that, in other possible implementations, the first filter unit 10244a can also be a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first color conversion unit 10243a is directed to the first filter unit 10244a, the red light in these rays can pass through the first filter unit 10244a and be emitted again, while the blue light in these rays can be reflected back to the first color conversion unit 10243a by the first filter unit 10244a. This allows the red quantum dots in the first color conversion unit 10243a to excite the blue light into red light, thereby further improving the excitation efficiency of the red quantum dots.

[0196] For example, the light emitted by the first sub-light-emitting functional layer 1023a1, the second sub-light-emitting functional layer 1023a2, and the third sub-light-emitting functional layer 1023a3 in the light-emitting unit 102 is all blue light. The second filter unit 10244b can be a green color block, which can transmit green light and absorb other colors of light. In this way, the light emitted from the second color conversion unit 10243b can pass through the second filter unit 10244b before being emitted, and the second filter unit 10244b can filter out light of colors other than green light, so as to ensure that the green sub-light-emitting unit G in the light-emitting unit 102 can filter out the blue light component. It should be noted that, in other possible implementations, the second filter unit 10244b can also be a film layer for transmitting green light and reflecting blue light. In this way, after the light emitted from the second color conversion unit 10243b is incident on the second filter unit 10244b, the green light in these rays can pass through the second filter unit 10244b and then be emitted again, while the blue light in these rays can be reflected back to the second color conversion unit 10243b by the second filter unit 10244b. This allows the green quantum dots in the second color conversion unit 10243b to excite this blue light into green light, thereby further improving the excitation efficiency of the green quantum dots.

[0197] It should be noted that the film structure of the first filter unit 10244a and the second filter unit 10244b can be the same and can be prepared by the same process; for example, both the first filter unit 10244a and the second filter unit 10244b are films that transmit red and green light and reflect blue light.

[0198] For example, the first sub-light-emitting functional layer 1023a1, the second sub-light-emitting functional layer 1023a2, and the third sub-light-emitting functional layer 1023a3 in the light-emitting unit 102 all emit blue light. The third filter unit 10244c can be a blue color block, which can transmit blue light and absorb other colors of light. In this way, the light emitted from the third color conversion unit 10243c can pass through the third filter unit 10244c before being emitted, and the third filter unit 10244c can filter out light of colors other than blue light, so as to ensure that the blue sub-light-emitting unit B in the light-emitting unit 102 can emit relatively pure blue light.

[0199] For example, the light emitted by the first sub-light-emitting functional layer 1023a1, the second sub-light-emitting functional layer 1023a2 and the third sub-light-emitting functional layer 1023a3 in the light-emitting unit 102 is blue light, and the third filter unit 10244c can be a transparent block that can transmit blue light.

[0200] It should be noted that since the orthographic projection of each filter unit in the filter layer 10244 onto the first substrate 101 overlaps with the orthographic projection of the corresponding light-transmitting hole K1 in the light-shielding layer 10241 onto the first substrate 101, a portion of the light-shielding layer 10241 is distributed between two adjacent filter units in the filter layer 10244 in the direction parallel to the extension surface of the first substrate 101. In this way, light emitted from the side of a filter unit in the filter layer 10244 can be absorbed by the light-shielding layer 10241, thereby ensuring that the light intensity emitted by each sub-pixel towards adjacent sub-pixels is low, effectively reducing the probability of color crosstalk in the light-emitting unit 102.

[0201] Furthermore, referring to Figures 11 and 12, the color conversion component 1024 includes an encapsulation layer 10245, which can be located on the side of the limiting dam layer 10242 facing away from the first substrate 101. The encapsulation layer 10245 encapsulates the limiting dam layer 10242, the optical functional layer 10243, and the filter layer 10244, preventing water and oxygen from the external environment from penetrating the limiting dam layer 10242 and eroding the optical functional layer 10243 or the filter layer 10244. This ensures that the optical functional layer 10243 can stably convert the color of light, resulting in high reliability of the optical functional layer 10243.

[0202] In this embodiment, the light-emitting part 1023 in the light-emitting unit 102 and the color conversion component 1024 can be bonded together by a connecting layer 1025. That is, a connecting layer 1025 for bonding the two together is distributed between the light-emitting part 1023 and the color conversion component 1024.

[0203] In this embodiment, the driving circuit 1033 in the driving unit 103 may include a pixel circuit. The pixel circuit includes a plurality of thin-film transistors and at least one storage capacitor. Optionally, the pixel circuit may include seven thin-film transistors and one storage capacitor, i.e., a 7T1C pixel circuit. Alternatively, the pixel circuit may include other numbers of thin-film transistors and other numbers of storage capacitors. This embodiment does not limit the number of thin-film transistors or the number of storage capacitors included in the pixel circuit.

[0204] Each thin-film transistor includes a gate, a source, and a drain. The pixel circuit comprises multiple thin-film transistors interconnected to drive the light-emitting unit 102 to emit light.

[0205] Referring to Figure 13, the driving circuit 1033 includes a substrate 10333, a connection pad 10335 located within the substrate 10333, and a first passivation layer (PVX1) n1, a connection trace layer n2, a barrier layer n3, a buffer layer n4, an active layer n5, a gate insulator (GI) n6, a gate layer n7, an inter-level dielectric (ILD) n8, a source-drain layer (SD) n9, a planarization layer (PLN) n10, a second passivation layer (PVX2) n11, and a third passivation layer (PVX3) n12 located on the substrate 10333 and stacked sequentially in a direction away from the substrate 10333.

[0206] The connection trace layer n2 includes multiple connection traces, connection traces and connection pads 10335, as well as pixel circuit connections.

[0207] The active layer n5 includes multiple active patterns corresponding to multiple thin-film transistors, each active pattern including a source region, a drain region, and a channel region.

[0208] The gate layer n7 includes multiple gate patterns corresponding to multiple thin-film transistors. The orthographic projections of the gate patterns on the substrate 10333 and the orthographic projections of the active patterns on the substrate 10333 partially overlap. The portion of the active pattern located in the overlapping region is the channel region of the thin-film transistor.

[0209] The source-drain layer n9 includes the source and drain of multiple thin-film transistors. The source and source regions of the thin-film transistors are connected, and the drain and drain regions of the thin-film transistors are connected.

[0210] The driving unit 103 includes a third electrode 1031 and a fourth electrode 1032 located between the second passivation layer n11 and the third passivation layer n12. The third passivation layer n12 has a first via n12a and a second via n12b. The first via n12a is used to expose a portion of the third electrode 1031, and the second via n12b is used to expose a portion of the fourth electrode 1032.

[0211] In order to enable the third electrode 1031 and the fourth electrode 1032 in the driving unit 103 to be bonded to the first electrode 1021 and the second electrode 1022 in the light-emitting unit 102, the size of the first via n12a can be larger than the size of the first electrode 1021, that is, the first electrode 1021 is bonded to the third electrode 1031 through the first via n12a. In addition, the size of the second via n12b can be larger than the size of the second electrode 1022, that is, the second electrode 1022 is bonded to the fourth electrode 1032 through the second via n12b.

[0212] In this embodiment, the organic film layer 10331 can be the planarization layer n10 in the driving circuit 1033. The first inorganic film layer 10332 can be the second passivation layer n11 in the driving circuit 1033. The third inorganic film layer 10335 can be the third passivation layer n12 in the driving circuit 1033. The second inorganic film layer 10334 is the interlayer dielectric layer n8 in the driving circuit 1033. The plurality of fourth inorganic film layers 10336 are respectively the first passivation layer n1, the barrier layer n3, the buffer layer n4, and the gate insulating layer n6.

[0213] Optionally, the orthographic projection of the planarization layer n10 on the first substrate 101 is located at the orthographic projection of the second passivation layer n11 on the first substrate 101, and the second passivation layer n11 may wrap around the edge of the planarization layer n10.

[0214] In this embodiment, the third passivation layer n12 can wrap around the edge of the third electrode 1031 and the edge of the fourth electrode 1032. This allows the third passivation layer n12 to protect the third electrode 1031 and the fourth electrode 1032, preventing the sides of the electrodes from contacting air and being corroded.

[0215] Optionally, the third electrode 1031 and the fourth electrode 1032 can be made of copper (Cu). The main function of the third passivation layer n12 is to protect the copper from corrosion by air. If the copper is corroded by air, the electrode will fall off, which will affect the reliability of the light-emitting component 100.

[0216] In the embodiments of this application, the multiple thin-film transistors included in the pixel circuit can all be low-temperature poly-silicon (LTPS) thin-film transistors. Alternatively, some of the thin-film transistors included in the pixel circuit are LTPS thin-film transistors, and the other part are low-temperature polycrystalline oxide (LTPO) thin-film transistors. This application does not limit this aspect.

[0217] Referring to Figure 14, the driving circuit 1033 may include a first passivation layer (PVX1) e1, a connection wiring layer e2, a barrier layer e3, a first buffer layer e4, an active layer e5, a first gate insulator (GI1) e6, a first gate layer e7, a second gate insulator (GI2) e8, a second gate layer e9, a first inter-level dielectric (ILD1) e10, a second buffer layer e11, an oxide layer (IGZO) e12, a third gate insulator (GI3) e13, a third gate layer e14, a second inter-level dielectric (ILD2) e15, a source-drain layer (SD) e16, and a planarization layer. The first passivation layer (PLN)e17, the second passivation layer (PVX2)e18, and the third passivation layer (PVX3)e19.

[0218] Optionally, the low-temperature polycrystalline silicon thin-film transistor T1 can be composed of an active pattern in the active layer e5, a gate pattern in the first gate layer e7, and a source and drain in the source-drain layer e16. The low-temperature polycrystalline oxide thin-film transistor T2 can be composed of a second gate layer e9 (as a bottom gate), an oxide layer e12, a third gate layer e14 (as a top gate), and a source and drain in the source-drain layer e16.

[0219] In Figure 14, the organic film layer 10331 can be the planarization layer e17 in the driving circuit 1033. The first inorganic film layer 10332 can be the second passivation layer e18 in the driving circuit 1033. The third inorganic film layer 10335 can be the third passivation layer e19 in the driving circuit 1033. The second inorganic film layer 10334 is the second interlayer dielectric layer e15 in the driving circuit 1033. The plurality of fourth inorganic film layers 10336 are respectively the first passivation layer e1, the barrier layer e3, the first buffer layer e4, the first gate insulating layer e6, the second gate insulating layer e8, the first interlayer dielectric layer e10, the second buffer layer e11, and the third gate insulating layer e13.

[0220] In this embodiment of the application, referring to FIG15, the light-emitting component 100 further includes a plurality of pins 105 located on the side of the driving unit 103 away from the light-emitting unit 102. The pins 105 are connected to the connection pads 10335 such that the pins 105 are electrically connected to the pixel circuits via the connection pads 10335 and the connection traces.

[0221] When the light-emitting component 100 includes a damming component 104, since the electrodes in the light-emitting unit 102 and the driving unit 103 are all located within the enclosed space formed by the damming component 104, each electrode can be protected. Furthermore, it prevents external solutions from seeping into the enclosed space and affecting the electrodes located within it. Therefore, when multiple pins 105 are fabricated on the side of the substrate 10333 away from the driving circuit 1033 using electroplating or chemical plating, even if the entire component needs to be placed in a specific solution, the solution will not seep into the enclosed space and damage the electrode connections within it, thus ensuring the light-emitting effect of the light-emitting component 100.

[0222] In summary, this application provides a light-emitting component, which includes a first substrate and an electrically connected light-emitting unit and a driving unit. In the driving unit, a first inorganic film layer in the driving circuit covers an organic film layer and wraps around the edge of the organic film layer, preventing the organic film layer from being exposed. This prevents external water and oxygen from intruding into the interior of the light-emitting component along the organic film layer, thus preventing the light-emitting component from failing due to water and oxygen intrusion and ensuring the yield of the light-emitting component.

[0223] Figure 16 is a flowchart of a method for fabricating a light-emitting component according to an embodiment of this application. This method can be used to prepare the light-emitting component provided in the above embodiment. Referring to Figure 16, the method includes:

[0224] Step S101: Obtain the light-emitting substrate.

[0225] Figure 17 is a partial structural schematic diagram of a light-emitting substrate provided in an embodiment of this application. Referring to Figure 17, the light-emitting substrate includes a first mother substrate and a plurality of light-emitting units 102 located on one side of the first mother substrate. Each light-emitting unit 102 includes a first electrode 1021, a second electrode 1022, and a light-emitting portion 1023 electrically connected to the first electrode 1021 and the second electrode 1022, respectively. The light-emitting unit 102 can be a light-emitting diode (LED). The light-emitting substrate can also be referred to as an LED wafer substrate.

[0226] Among them, any two adjacent light-emitting units 102 have a first interval J1 between their orthogonal projections on the first mother substrate.

[0227] Step S102: Obtain the driving substrate.

[0228] Figure 18 is a partial structural schematic diagram of a driving substrate provided in an embodiment of this application. Referring to Figure 18, the driving substrate includes a second mother substrate and a plurality of driving units 103 located on one side of the second mother substrate. Each driving unit 103 includes a third electrode 1031, a fourth electrode 1032, and a driving circuit 1033 electrically connected to the third electrode 1031 and the fourth electrode 1032, respectively. The driving substrate can be an active-matrix (AM) driving substrate.

[0229] Figure 19 is a partial schematic diagram of the driving substrate shown in Figure 18. Referring to Figure 19, any two adjacent driving units 103 among the plurality of driving units 103 have a second interval J2 between their orthogonal projections on the second mother substrate.

[0230] In this embodiment of the application, taking the driving unit shown in FIG14 as an example, the process of obtaining the driving substrate includes:

[0231] 1. Referring to FIG20, a connection pad 10335, a substrate thin film 10333a, a second inorganic thin film (e.g., a first passivation thin film e1a), a connection wiring layer e2, a second inorganic thin film (e.g., a barrier thin film e3a, a first buffer thin film e4a, a first gate insulating thin film e6a, a second gate insulating thin film e8a, a first interlayer dielectric thin film e10, a second buffer layer e11, a third gate insulating thin film e13a, and a second interlayer dielectric thin film e15a), an organic film layer 10331 (e.g., a planarization layer e17, which is an island design with light-emitting components as units), a first inorganic thin film (e.g., a second passivation thin film e18a), an electrode layer (a third electrode 1031 and a fourth electrode 1032), and a first inorganic thin film (a third passivation thin film e19a) are formed on one side of the second mother substrate.

[0232] Referring to Figure 20, in this stage, the vias for exposing the third and fourth electrodes in the third passivation layer can be omitted to avoid affecting the electrodes in subsequent processes (such as steps 2 and 3 below). For simplification, Figure 20 does not show the specific structure of the pixel circuit in the driving unit.

[0233] 2. Referring to Figure 21, a photomask is used to pattern the second and first inorganic thin films to remove the inorganic material at the cut lines, resulting in the first inorganic film layer 10332 and the second inorganic film layer 10334. The patterning process includes photoresist coating, exposure, development, etching, and photoresist removal. The etching can be deep hole etching, and the second and first inorganic thin films can be processed using the same patterning process.

[0234] For simplification, Figure 21 does not show the specific structure of the pixel circuit in the driving unit. Referring to Figure 21, after removing the inorganic material located at the cutting path in the third passivation film, the third passivation intermediate film e19a1 is obtained. At this stage, the vias for exposing the third and fourth electrodes in the third passivation layer can be omitted to avoid affecting the electrodes in subsequent processes and to prevent electrode corrosion.

[0235] 3. Referring to Figure 22, the first inorganic film layer 10332 and the second inorganic film layer 10334 are used as hard masks to etch the substrate thin film 10333a to obtain the substrate 10333, and then to obtain a plurality of driving units 103 with spaced spacing. For the sake of simplification, the specific structure of the pixel circuit in the driving unit is not shown in Figure 22.

[0236] Referring to Figure 22, it can be seen that the edge of the inorganic film layer after removing the inorganic material along the dicing path can be a stepped edge. Furthermore, the edge of the substrate obtained after etching the substrate film using the inorganic film layer as a mask is almost a steep edge, that is, the side edge of the substrate 10333 can be perpendicular to the surface of the substrate 10333.

[0237] 4. Referring to Figure 23, the third passivation intermediate film e19a1 can be patterned to obtain a via e19a2 exposing the third electrode 1031 and the fourth electrode 1032. Figure 23 can be a cross-sectional view of Figure 19 along the CC' direction. For simplification, Figure 23 does not show the specific structure of the pixel circuit in the driving unit.

[0238] In this embodiment, the substrate film can be made of polyimide (PI). The substrate film in step 1 has vias (which can be called TPVs (through PI vias)). These vias can be used to connect the wiring and the connecting pads 10335, allowing the subsequently formed pins 105 to be connected to the wiring through the connecting pads 10335. In other words, the substrate film has undergone an opening process (patterning) in step 1. However, the substrate film is not islanded in step 1; instead, the etching of the substrate film is performed after the inorganic film layer is deposited and etched. The reason is that when the TPV vias are formed, the pixel circuitry above them has not yet been fabricated. If the substrate film is islanded, it may cause deformation and detachment of the film layer of the subsequent pixel circuitry, which is detrimental to subsequent processes.

[0239] Furthermore, the solution in this application embodiment uses processes such as exposure and etching to achieve the independence of the substrate 10333 and the driving circuit 1033 on the substrate 10333. The process is simple, highly operable, and has high precision.

[0240] Step S103: The light-emitting unit and the driving unit are bonded together using a bonding process, so that the third electrode and the first electrode are electrically connected, and the fourth electrode and the second electrode are electrically connected.

[0241] Referring to Figure 24, the number of light-emitting units 102 on the first mother substrate corresponds to the number of driving units 103 on the second mother substrate. Referring to Figure 25, during the bonding process, the light-emitting units 102 and the corresponding driving units 103 can be bonded together. For simplification, Figure 25 does not show the specific structure of the pixel circuit in the driving unit.

[0242] Step S104: Remove the second mother substrate using a peeling process.

[0243] In this embodiment, referring to FIG26, the second mother substrate can be removed using a laser liftoff (LLO) process. After removing the second mother substrate, the multiple driving units 103 are designed as islands, meaning there is a gap between any two adjacent driving units 103. For simplicity, FIG26 does not show the specific structure of the pixel circuitry within the driving units.

[0244] In this embodiment, after bonding, the second substrate can be peeled off from one side of the driving unit 102 using a laser lift-off method. Furthermore, after peeling the second mother substrate off from one side of the driving unit 103, the first mother substrate can be thinned (the thickness of the first mother substrate after thinning is less than the thickness of the first mother substrate before thinning), so that the total thickness of the final light-emitting component is thinner, facilitating the thinning of the display substrate.

[0245] Step S105: Cut the first mother substrate using a cutting process to obtain multiple independent light-emitting components.

[0246] Since the multiple driving units 103 are already designed as islands, only the first mother substrate needs to be cut using a laser cutting process. That is, referring to FIG27, the driving units 103 have been specially designed in the above step 102, so the independent setting of the light-emitting components can be achieved by performing only one laser cutting after bonding. The fabrication method provided by the embodiments of this application can greatly increase the proportion of the driving units on the display substrate and reduce the manufacturing cost of the light-emitting components. For the sake of simplification, FIG27 does not show the specific structure of the pixel circuit in the driving unit.

[0247] Optionally, the light-emitting unit 102 can be referred to as a light-emitting diode (LED) chip. The driving unit 103 can be referred to as a driving chip. The light-emitting component is formed by bonding the LED chip and the driving chip (chip by chip). Among them, the light-emitting component 100 can be an active-matrix light-emitting diode (AMLED) chip.

[0248] In this embodiment, after step S104 and before step S105, the entire structure formed in step S104 is placed in a specific solution, and multiple pins 105 are formed on the side of the driving unit 103 away from the light-emitting unit 102 using an electroplating process or a chemical plating process. Alternatively, after step S105, the entire structure formed in step S105 is placed in a specific solution, and multiple pins 105 are formed on the side of the driving unit 103 away from the light-emitting unit 102 using an electroplating process or a chemical plating process.

[0249] Multiple pins 105 can be connected to the driving unit 103, thereby enabling the driving backplate of the display substrate to provide driving signals to the driving unit 103 through the pins 105, so that the driving unit 103 can drive the light-emitting unit 102 to emit light.

[0250] In summary, this application provides a method for fabricating a light-emitting component. The light-emitting component fabricated by this method includes a first substrate, and an electrically connected light-emitting unit and a driving unit. In the driving unit, a first inorganic film layer in the driving circuit covers an organic film layer and wraps around the edge of the organic film layer, preventing the organic film layer from being exposed. This prevents external water and oxygen from penetrating into the interior of the light-emitting component along the organic film layer, avoiding failure due to water and oxygen intrusion and ensuring the yield of the light-emitting component.

[0251] Figure 28 is a schematic diagram of a display substrate provided in an embodiment of this application. Referring to Figure 28, the display substrate includes a driving backplate 200 and a plurality of light-emitting components 100 as provided in the above embodiment. The plurality of light-emitting components 100 can be connected to the driving backplate 200 by die bonding. The driving backplate 200 can be a passive matrix (PM) driving backplate, referred to as a PM backplate.

[0252] Referring to Figure 29, multiple light-emitting components 100 are located in display area a of the display substrate, and the multiple light-emitting components 100 are arranged in an array. The driving backplane 200 is used to provide driving signals to the driving unit 103 through multiple pins 105 in the light-emitting components 100, so that the driving unit 103 drives the light-emitting unit 102 to emit light.

[0253] Optionally, the display substrate can be a display screen in a mobile phone, laptop, or flat-panel computer, or it can be an outdoor advertising screen.

[0254] Since the display substrate can have essentially the same technical effects as the light-emitting components described in the previous embodiments, for the sake of brevity, the technical effects of the display substrate will not be described again here.

[0255] The terminology used in the embodiments section of this application is for explaining the embodiments of this application only and is not intended to limit this application. Unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains.

[0256] The terminology used in the embodiments section of this application is for illustrative purposes only and is not intended to limit the application. Unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," "third," and similar terms used in the patent application specification and claims of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "a" or "one," and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "comprising" or "including," and similar terms mean that the elements or objects preceding "comprising" or "including" encompass the elements or objects listed following "comprising" or "including" and their equivalents, and do not exclude other elements or objects. The terms "connected," "linked," and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up," "down," "left," "right," etc., are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0257] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A light emitting assembly, characterized by The light emitting component comprises: a first substrate; a light emitting unit located on one side of the first substrate, the light emitting unit comprising a first electrode, a second electrode, and a light emitting part electrically connected to the first electrode and the second electrode respectively; and a driving unit located on a side of the light emitting unit away from the first substrate, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit electrically connected to the third electrode and the fourth electrode respectively, the third electrode being electrically connected to the first electrode, and the fourth electrode being electrically connected to the second electrode; wherein the driving circuit comprises a laminated organic film layer and a first inorganic film layer, the first inorganic film layer being closer to the light emitting unit relative to the organic film layer, a normal projection of the first inorganic film layer on the first substrate covering a normal projection of the organic film layer on the first substrate, and the first inorganic film layer wrapping an edge of the organic film layer.

2. The light emitting assembly of claim 1, wherein, A normal projection of the light emitting unit on the first substrate and a normal projection of the driving unit on the first substrate are both located within the first substrate.

3. The light emitting assembly of claim 2, wherein, A distance between a normal projection of an edge of the driving unit on the first substrate and an edge of the first substrate is greater than 0.

4. The light emitting assembly of claim 1, wherein, The driving circuit further comprises a substrate and a second inorganic film layer, the second inorganic film layer, the organic film layer, and the first inorganic film layer are all located on the substrate and are laminated in sequence away from the substrate; a normal projection of the organic film layer on the first substrate is located within a normal projection of the second inorganic film layer on the first substrate, and a normal projection of an edge of the organic film layer on the first substrate is farther away from a normal projection of an edge of the substrate on the first substrate relative to a normal projection of an edge of the second inorganic film layer on the first substrate.

5. The light emitting assembly of claim 4, wherein, A normal projection of the substrate on the first substrate is located within a normal projection of the second inorganic film layer on the first substrate, and an area of the normal projection of the substrate on the first substrate is less than or equal to an area of the normal projection of the second inorganic film layer on the first substrate.

6. The light emitting assembly of claim 5, wherein, A normal projection of the first inorganic film layer on the first substrate is located within a normal projection of the second inorganic film layer on the first substrate; an included angle between a side edge of the first inorganic film layer and a surface of the substrate is an acute angle, and an included angle between a side edge of the second inorganic film layer and the surface of the substrate is an acute angle; wherein the acute angle is an included angle on a side where the inorganic film layer is located.

7. The light emitting assembly of claim 6, wherein, An edge of the first inorganic film layer and an edge of the second inorganic film layer constitute a stepped edge; wherein the stepped edge comprises a side edge of the first inorganic film layer, a surface of the second inorganic film layer exposed by the first inorganic film layer, and a side edge of the second inorganic film layer, one end of the side edge of the first inorganic film layer being connected to one end of the surface, and the other end of the surface being connected to one end of the side edge of the second inorganic film layer.

8. The light emitting assembly of claim 4, wherein, The driving circuit further comprises a third inorganic film layer located on a side of the first inorganic film layer away from the substrate, and a plurality of fourth inorganic film layers located between the substrate and the second inorganic film layer; A projection of the third inorganic film layer on the first substrate is located within a projection of the first inorganic film layer on the first substrate, and an area of the projection of the third inorganic film layer on the first substrate is smaller than an area of the projection of the first inorganic film layer on the first substrate; A projection of the second inorganic film layer on the first substrate is located within a projection of any fourth inorganic film layer of the plurality of fourth inorganic film layers on the first substrate, and an area of the projection of the second inorganic film layer on the first substrate is smaller than an area of the projection of any fourth inorganic film layer on the first substrate; A projection of a fourth inorganic film layer of the plurality of fourth inorganic film layers away from the substrate on the first substrate is located within a projection of a fourth inorganic film layer close to the substrate on the first substrate, and Areas of the projections of the plurality of fourth inorganic film layers on the first substrate decrease in turn in a direction away from the substrate.

9. The light emitting assembly according to any of claims 1 to 8, characterized in that The first substrate is a glass substrate.

10. The light emitting assembly of claim 9, wherein, The first substrate includes a first surface facing the light emitting unit, a second surface facing away from the light emitting unit, and a first side surface between the first surface and the second surface; The first side surface includes a cutting portion and a breaking portion, the cutting portion presents an ablation mark of laser cutting, and the breaking portion presents a mark of stress breaking.

11. The light emitting assembly of claim 10, wherein, The breaking portion includes a first sub-breaking portion and a second sub-breaking portion; In a direction from the first surface to the second surface, the first sub-breaking portion, the cutting portion, and the second sub-breaking portion are stacked in turn.

12. The light emitting assembly according to any of claims 1 to 8, characterized in that The light emitting assembly includes a dam assembly, the dam assembly is annular; The dam assembly is located between the light emitting portion and the driving circuit, and the dam assembly surrounds the first electrode, the second electrode, the third electrode, and the fourth electrode; A projection of the dam assembly on the first substrate is located within a projection of the organic film layer on the first substrate.

13. The light emitting assembly of claim 12, wherein, The organic film layer includes a third surface, a fourth surface, and a second side surface between the third surface and the fourth surface; The third surface is closer to the first substrate than the fourth surface, and a projection of the dam assembly on the first substrate is located within a projection of the third surface on the first substrate.

14. The light emitting assembly of claim 12, wherein, The dam assembly includes a first dam portion and a second dam portion; The first dam portion is located on a side of the light emitting portion away from the first substrate and is in contact with the light emitting portion, and the second dam portion is located on a side of the driving circuit facing the light emitting unit and is in contact with the driving circuit, and the first dam portion and the second dam portion are connected to each other to form a sealed space surrounding each electrode.

15. The light emitting assembly of claim 14, wherein, The first dam portion, the first electrode, and the second electrode are made of the same material and are prepared based on the same patterning process; The second dam portion, the third electrode, and the fourth electrode are made of the same material and are prepared based on the same patterning process.

16. The light emitting assembly according to any of claims 1 to 8, characterized in that The light emitting portion includes a first semiconductor layer and a sub-light emitting functional layer on one side of the first semiconductor layer; The first semiconductor layer comprises a connecting part corresponding to the sub-light-emitting functional layer and an auxiliary part connected with the connecting part, the connecting part is arranged in connection with the sub-light-emitting functional layer, and the auxiliary part is in an integrated structure with the connecting part.

17. The light emitting assembly of claim 16, wherein, The driving circuit is arranged on the first substrate.

18. The light emitting assembly of claim 16, wherein, The first electrode is connected with the first semiconductor layer. The auxiliary part comprises a first auxiliary part and a second auxiliary part, the first auxiliary part is arranged in overlapping with the first electrode on the first substrate, and the second auxiliary part is arranged between the first auxiliary part and the connecting part. The auxiliary part is made of the same material as the connecting part. The sub-light-emitting functional layer comprises a second semiconductor layer and a light-emitting layer, the light-emitting layer, the second semiconductor layer and the second electrode are arranged in a stacking manner away from the first substrate, and the light-emitting layer is arranged in connection with the connecting part in the first semiconductor layer.

19. The light emitting assembly of claim 16, wherein, The light-emitting unit comprises a first sub-light-emitting unit of a first color, a second sub-light-emitting unit of a second color and a third sub-light-emitting unit of a third color, the first color, the second color and the third color are different from each other. The light-emitting unit comprises a first electrode shared by the first sub-light-emitting unit, the second sub-light-emitting unit and the third sub-light-emitting unit, a second electrode of the first sub-light-emitting unit, a second electrode of the second sub-light-emitting unit and a second electrode of the third sub-light-emitting unit.

20. The light emitting assembly of any of claims 1 to 8, wherein, The driving circuit comprises a pixel circuit, the pixel circuit comprises a plurality of thin film transistors and at least one storage capacitor, and the thin film transistor comprises a gate, a source and a drain. The driving circuit comprises a substrate, a connecting pad arranged in the substrate, and a first passivation layer, a connecting trace layer, a barrier layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source-drain layer, a planarization layer, a second passivation layer and a third passivation layer arranged in a stacking manner away from the substrate; The connecting trace layer comprises a plurality of connecting traces, and the connecting traces are connected with the connecting pad and the pixel circuit; The active layer comprises a plurality of active patterns corresponding to the plurality of thin film transistors, each of the active patterns comprises a source region, a drain region and a channel region; The gate layer comprises a plurality of gate patterns corresponding to the plurality of thin film transistors, the gate patterns are arranged in a stacking manner away from the substrate, and the gate patterns are arranged in a stacking manner away from the substrate. The source-drain layer comprises the source and the drain of the plurality of thin film transistors, the source of the thin film transistor is connected with the source region, and the drain of the thin film transistor is connected with the drain region. The third electrode and the fourth electrode are located between the second passivation layer and the third passivation layer, the third passivation layer has a first via hole for exposing a part of the third electrode and a second via hole for exposing a part of the fourth electrode. The organic film layer includes the planar layer, and the first inorganic film layer includes the second passivation layer.

21. The light emitting assembly of claim 20, wherein, The third passivation layer wraps edges of the third electrode and edges of the fourth electrode.

22. The light emitting assembly of any of claims 1 to 8, wherein, The light emitting assembly further includes a plurality of pins located on a side of the driving unit away from the light emitting unit, the pins and the driving circuit are electrically connected.

23. A method of manufacturing a light emitting assembly, characterized by The method comprises: obtaining a light emitting substrate, the light emitting substrate includes a first mother substrate and a plurality of light emitting units located on a side of the first mother substrate, the light emitting unit includes a first electrode, a second electrode and a light emitting part electrically connected with the first electrode and the second electrode respectively, any two adjacent light emitting units in the plurality of light emitting units have a first interval between orthographic projections of the two light emitting units on the second mother substrate; obtaining a driving substrate, the driving substrate includes a second mother substrate and a plurality of driving units located on a side of the second mother substrate, the driving unit includes a third electrode, a fourth electrode and a driving circuit electrically connected with the third electrode and the fourth electrode respectively, any two adjacent driving units in the plurality of driving units have a second interval between orthographic projections of the two driving units on the second mother substrate; bonding the light emitting unit and the driving unit by a bonding process, so that the third electrode and the first electrode are electrically connected, and the fourth electrode and the second electrode are electrically connected; removing the second mother substrate by a stripping process, and cutting the first mother substrate by a cutting process to obtain a plurality of independent light emitting assemblies.

24. A display substrate, comprising: The display substrate includes a driving backplate and a plurality of light emitting assemblies according to any one of claims 1 to 22, wherein the light emitting assemblies are arranged in an array on the driving backplate, the driving backplate is electrically connected with the light emitting assemblies and provides driving signals to the light emitting assemblies.

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