Plasma processing device

Abstract

A plasma processing device disclosed in the present invention comprises: a chamber; a substrate support part; a plasma generation part, and a bias power supply. The substrate support part is disposed inside of the chamber. A dielectric section of the substrate support part includes a central region, an edge region, and an intermediate region between the central region and the edge region. The central region, the intermediate region, and the edge region provide a substrate support surface. An electrostatic chuck also includes a bias electrode electrically coupled to the bias power supply. The bias electrode has a range, along the radial direction, that is the distance between the bias electrode and the substrate support surface, or the bias electrode is not formed in the central region or the intermediate region, from among the central region, the intermediate region, and the edge region.

Description

Plasma processing equipment

[0001] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is provided within the chamber. A bias power supply is connected to the substrate support. An electric bias is supplied from the bias power supply to the substrate support, thereby attracting ions from the plasma in the chamber to the substrate. Such a plasma processing apparatus is described in Patent Document 1 listed below.

[0003] Japanese Patent Application Laid-Open No. 2021-158134

[0004] The present disclosure provides a technique for correcting the distribution of the thickness of a sheath on a substrate support in a plasma processing apparatus.

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generating unit, and a bias power supply. The substrate support is disposed within the chamber. The substrate support includes an electrostatic chuck. The plasma generating unit is configured to generate plasma from a gas in the chamber. The bias power supply is electrically coupled to the substrate support. The electrostatic chuck includes a dielectric portion and a bias electrode. The bias electrode is disposed within the dielectric portion and electrically coupled to the bias power supply. The dielectric portion includes a central region intersecting a central axis of the dielectric portion, an edge region extending circumferentially outside the central region, and an intermediate region between the central region and the edge region. The central region, the intermediate region, and the edge region provide a substrate support surface. The bias electrode has a distribution of the vertical distance between the bias electrode and the substrate support surface along the radial direction such that the vertical distance between the bias electrode and the substrate support surface in the central region is different from the vertical distance between the bias electrode and the substrate support surface in the intermediate region, and the vertical distance between the bias electrode and the substrate support surface in the intermediate region is different from the vertical distance between the bias electrode and the substrate support surface in the edge region, or is not formed in the central region or the intermediate region among the central region, intermediate region, and edge region.

[0006] According to one exemplary embodiment, it is possible to correct the distribution of the thickness of a sheath on a substrate support in a plasma processing apparatus.

[0007] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. FIG. 2 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 3 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to one exemplary embodiment. FIG. 4 is a diagram illustrating an example of a radial distribution of a sheath thickness. FIG. 5 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to another exemplary embodiment. FIG. 6 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. FIG. 7 is a diagram illustrating another example of a radial distribution of a sheath thickness. FIG. 8 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. FIG. 9 is a plan view showing bias electrodes in the plasma processing apparatus shown in FIG. 8. FIG. 10 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. FIG. 11 is a diagram illustrating yet another example of a radial distribution of a sheath thickness. FIG. 12 is a diagram illustrating a substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance (ECR) plasma, helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Therefore, AC signals include RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is realized by, for example, a computer 2a. The control unit 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3. The functions performed by the processing unit 2a1 described in this disclosure may be implemented in circuitry or processing circuitry, including general-purpose processors, application-specific processors, integrated circuits, ASICs (Application Specific Integrated Circuits), CPUs (Central Processing Units), conventional circuitry, and / or combinations thereof, programmed to perform the described functions. A processor is considered to be a circuit or processing circuit including transistors and other circuitry. The processor may also be a programmed processor that executes a program stored in the memory unit 2a2. This program may be stored in the memory unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).In this disclosure, a circuit, unit, or means is hardware that is programmed to implement or configured to implement a described function. The hardware may be any hardware described in this disclosure or any hardware that is programmed to implement or known to implement the described function. If the hardware is a processor, which is considered a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may be formed on another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one bias electrode electrically connected to or coupled to a power supply 31 and / or a power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one bias electrode functions as a lower electrode. Alternatively, the conductive member of the base 1110 and the bias electrode within the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit (described later), is electrically connected to or coupled to the bias electrode within the ceramic member 1111a, and the first RF generation unit 31a (described later) is electrically connected to or coupled to the conductive member of the base 1110. The electrostatic chuck electrode 1111b may function as a lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply system 30 includes a power supply 31 electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] The power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generator 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is electrically connected or coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generator 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generator 31a is electrically connected or coupled to a lower electrode, the second RF generator 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply system 30 may also include a power supply 32 electrically connected or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generator 32a and a second voltage generator 32b. In one embodiment, the first voltage generator 32a is electrically connected or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to the at least one lower electrode. In one embodiment, the second voltage generator 32b is electrically connected or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses includes multiple cycles, each cycle including a burst of voltage pulses during a first period and a constant reference voltage during a second period. That is, the bursts of voltage pulses are repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulses is greater than the absolute value of the voltage level of the reference voltage. The voltage pulses may have an arbitrary waveform, such as a rectangular, trapezoidal, triangular, or combination thereof, and the arbitrary waveform may vary over time. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. The first and second voltage generating units 32a and 32b may be provided in addition to the power supply 31, or the first voltage generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] 3, which illustrates a substrate support and a plurality of power supplies of a plasma processing apparatus according to an exemplary embodiment. The substrate support 11A shown in FIG. 3 can be used as the substrate support 11 in the plasma processing apparatus 1.

[0027] Similar to the substrate support part 11, the substrate support part 11A includes a base 1110 and an electrostatic chuck 1111. The electrostatic chuck 1111 includes a dielectric part 61 and is disposed on the base 1110. The dielectric part 61 may be a ceramic member 1111a. The dielectric part 61 may be formed from another dielectric material as long as it has the same shape as the ceramic member 1111a.

[0028] As shown in FIG. 3 , the plasma processing apparatus 1 includes a bias power supply 51a. The bias power supply 51a is the second RF generator 31b or the first voltage generator 32a, and is electrically coupled to the substrate support 11A. The bias power supply 51a is configured to supply a bias RF signal or a sequence of voltage pulses to the substrate support 11A as an electrical bias for attracting ions from the plasma in the chamber 10 to the substrate W. When the bias power supply 51a generates a bias RF signal, the bias power supply 51a is electrically coupled to the substrate support 11A via a matcher 51m. When the bias power supply 51a generates a sequence of voltage pulses, the matcher 51m may not be provided.

[0029] The plasma processing apparatus 1 may further include a bias power supply 52a. The bias power supply 52a is a power supply similar to the second RF generator 31b or the first voltage generator 32a and is electrically coupled to the substrate support 11A. That is, the bias power supply 52a is configured to supply a bias RF signal or a sequence of voltage pulses to the substrate support 11A as an electrical bias for attracting ions from the plasma in the chamber 10 to the edge ring ER. The edge ring ER is disposed on the substrate support 11A to surround the substrate W and constitutes the ring assembly 112 described above. When the bias power supply 52a generates a bias RF signal, the bias power supply 52a is electrically coupled to the substrate support 11A via a matcher 52m. When the bias power supply 52a generates a sequence of voltage pulses, the matcher 52m may not be provided.

[0030] In the plasma processing apparatus 1, the first RF generating unit 31a may be electrically connected or coupled to a conductive member of the base 1110 via a matching unit 31m. Alternatively, the first RF generating unit 31a may be electrically connected or coupled to an upper electrode via a matching unit 31m. When a source RF signal is supplied from the first RF generating unit 31a, plasma is generated from the gas in the chamber 10. Sheaths are formed between the plasma and each of the substrate W and the edge ring ER. The thickness of the sheaths is adjusted by the electrical biases supplied to the substrate support 11A from the bias power supplies 51a and 52a.

[0031] The dielectric portion 61 includes a central region 611, an intermediate region 612, and an edge region 613. The central region 611 is a region that intersects with the axis AX. The axis AX is the central axis of each of the dielectric portion 61, the electrostatic chuck 1111, and the substrate support portion 11A. The central region 611 has a circular shape when viewed in a plan view in the vertical direction (i.e., the direction in which the axis AX extends). The edge region 613 extends along the circumferential direction outside the central region 611 in a radial direction relative to the axis AX. When viewed in a plan view in the vertical direction, the edge region 613 has a ring shape that extends around the axis AX. The intermediate region 612 is a region between the central region 611 and the edge region 613 and extends along the circumferential direction. When viewed in a plan view in the vertical direction, the intermediate region 612 has a ring shape that extends around the axis AX.

[0032] The central region 611, the intermediate region 612, and the edge region 613 provide a substrate support surface (i.e., the central region 111a). The radial central region of the substrate W is located on the central region 611. The radial intermediate region of the substrate W is located on the intermediate region 612. The radial edge region of the substrate W is located on the edge region 613.

[0033] The electrostatic chuck 1111 further includes at least one electrostatic chuck electrode 62. In the example of Fig. 3, the electrostatic chuck 1111 includes a plurality of electrostatic chuck electrodes 62. The electrostatic chuck 1111 may further include electrostatic chuck electrodes 631 and 632. The electrostatic chuck electrodes 62, 631, and 632 are arranged in the dielectric portion 61 as an electrostatic chuck electrode 1111b.

[0034] A plurality of electrostatic chuck electrodes 62 are disposed below the substrate support surface (i.e., the central region 111a) and may extend between the substrate support surface and a bias electrode 64, which will be described later.

[0035] The multiple electrostatic chuck electrodes 62 include a central electrode 62c, an intermediate electrode 62m, and an edge electrode 62e. The central electrode 62c extends within a central region 611. The central electrode 62c may have a circular shape centered on the axis AX in a vertical planar view, or may extend substantially flat along the horizontal direction. The intermediate electrode 62m extends within a middle region 612. The intermediate electrode 62m may have a ring shape extending around the axis AX in a vertical planar view, or may extend substantially flat along the horizontal direction. The edge electrode 62e extends within an edge region 613. The edge electrode 62e may have a ring shape extending around the axis AX in a vertical planar view, or may extend substantially flat along the horizontal direction. The central electrode 62c, the intermediate electrode 62m, and the edge electrode 62e may be at substantially the same distance from the substrate support surface along the vertical direction.

[0036] The central electrode 62c, the intermediate electrode 62m, and the edge electrode 62e are electrically isolated from one another within the dielectric portion 61. The central electrode 62c and the intermediate electrode 62m are isolated from one another at the boundary between the central region 611 and the intermediate region 612. That is, a ring-shaped gap extending in the circumferential direction exists between the central electrode 62c and the intermediate electrode 62m at the boundary between the central region 611 and the intermediate region 612. This gap is filled with the dielectric portion 61. The intermediate electrode 62m and the edge electrode 62e are isolated from one another at the boundary between the intermediate region 612 and the edge region 613. That is, a ring-shaped gap extending in the circumferential direction exists between the intermediate electrode 62m and the edge electrode 62e at the boundary between the intermediate region 612 and the edge region 613. This gap is filled with the dielectric portion 61.

[0037] At least one power supply is connected to the plurality of electrostatic chuck electrodes 62. A voltage may be applied to the plurality of electrostatic chuck electrodes 62 individually from a single power supply, or may be applied to the plurality of electrostatic chuck electrodes 62 individually from multiple power supplies. When a voltage is applied to the plurality of electrostatic chuck electrodes 62 from at least one power supply, an electrostatic attractive force is generated between the electrostatic chuck 1111 and the substrate W, and the substrate W is held by the electrostatic chuck 1111.

[0038] The electrostatic chuck electrodes 631 and 632 are disposed below the ring support surface (i.e., the annular region 111b). The electrostatic chuck electrodes 631 and 632 may extend between the ring support surface and a bias electrode 65 (described later). The electrostatic chuck electrodes 631 and 632 extend circumferentially around the axis AX. The electrostatic chuck electrode 631 is disposed inside the electrostatic chuck electrode 632. The electrostatic chuck electrodes 631 and 632 may have a ring shape extending around the axis AX. One or more power supplies are connected to the electrostatic chuck electrodes 631 and 632 to generate a potential difference therebetween. When voltages are applied from the one or more power supplies to the electrostatic chuck electrodes 631 and 632, an electrostatic attractive force is generated between the electrostatic chuck 1111 and the edge ring ER, thereby holding the edge ring ER by the electrostatic chuck 1111.

[0039] The electrostatic chuck 1111 further includes a bias electrode 64. The electrostatic chuck 1111 may further include a bias electrode 65. The bias electrodes 64 and 65 are disposed within the dielectric portion 61. The bias electrode 64 is disposed below the substrate support surface (i.e., the central region 111a). The bias electrode 64 is electrically coupled to a bias power supply 51a. The bias electrode 65 is disposed below the ring support surface (i.e., the annular region 111b). The bias electrode 65 extends in the circumferential direction around the axis line AX. In a plan view in the vertical direction, the bias electrode 65 may have a ring shape extending around the axis line AX. The bias electrode 65 is electrically connected to a bias power supply 52a.

[0040] The bias electrode 64 includes a central portion 64c, an intermediate portion 64m, and an edge portion 64e. The central portion 64c extends in a central region 611. The central portion 64c may have a circular shape centered on the axis AX in a planar view in the vertical direction. The central portion 64c may extend flat along a horizontal direction intersecting or perpendicular to the axis AX. The vertical distance between the central portion 64c and the substrate support surface is a distance Lc. The intermediate portion 64m extends in an intermediate region 612. The intermediate portion 64m may have a ring shape extending around the axis AX in a planar view in the vertical direction. The intermediate portion 64m may extend flat along the horizontal direction. The vertical distance between the intermediate portion 64m and the substrate support surface is a distance Lm. The edge portion 64e extends in an edge region 613. The edge portion 64e may have a ring shape extending around the axis line AX in a plan view in the vertical direction. The edge portion 64e may extend flatly along the horizontal direction. The vertical distance between the edge portion 64e and the substrate support surface is the distance Le.

[0041] The bias electrode 64 has a distribution of vertical distances between the bias electrode 64 and the substrate support surface along the radial direction such that the distances Lc and Lm are different from each other and the distances Lm and Le are different from each other. The bias electrode 64 may have a distribution of distances such that the distance Le is shorter than the distance Lc and / or the distance Lm. In one embodiment, the bias electrode 64 has a distribution of distances such that the distance from the substrate support surface in the vertical direction gradually decreases as the distance in the radial direction increases. In the example of FIG. 3, the distance Lm is longer than the distance Le and shorter than the distance Lc.

[0042] In the example of FIG. 3 , the bias electrode 64 may extend vertically at the boundary between the central region 611 and the intermediate region 612, connecting the bias electrode 64 in the central region 611 (central portion 64c) with the bias electrode 64 in the intermediate region 612 (intermediate portion 64m). For example, the central portion 64c and the intermediate portion 64m may be connected to each other by a tubular wiring or multiple wirings extending vertically at the boundary between the central region 611 and the intermediate region 612. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0043] Furthermore, the bias electrode 64 may extend vertically at the boundary between the intermediate region 612 and the edge region 613, connecting the bias electrode 64 in the intermediate region 612 (intermediate portion 64m) with the bias electrode 64 in the edge region 613 (edge ​​portion 64e). For example, the intermediate portion 64m and the edge portion 64e may be connected to each other by a tubular wiring or multiple wirings extending vertically at the boundary between the intermediate region 612 and the edge region 613. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0044] Reference is now made to FIG. 4, which illustrates an example of the radial distribution of the sheath thickness. FIG. 4 illustrates the radial distribution of the plasma sheath thickness above a substrate support section when a bias electrode connected to a bias power supply 51a extends flat and horizontally across the interior of the dielectric section below the substrate support surface. The sheath thickness shown in FIG. 4 is greatest at the center of the substrate (or substrate support surface) (position indicated by "0" on the horizontal axis), decreases with increasing radial distance, and is smallest at the edge WE of the substrate (or the edge of the substrate support surface). With the bias electrode 64 shown in FIG. 3, the radial distribution of the sheath thickness shown in FIG. 4 can be corrected to approach a uniform sheath thickness distribution by applying an electrical bias to the bias electrode 64.

[0045] As described above, the multiple electrostatic chuck electrodes 62, i.e., the central electrode 62 c, the intermediate electrode 62 m, and the edge electrode 62 e, are electrically isolated from one another within the dielectric portion 61. Therefore, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness while suppressing the influence of the multiple electrostatic chuck electrodes 62 interposed between the bias electrode 64 and the substrate support surface.

[0046] Reference is now made to FIG. 5, which is a diagram illustrating a substrate support and a plurality of power supplies of a plasma processing apparatus according to another exemplary embodiment. The substrate support 11B shown in FIG. 5 can be employed as the substrate support 11 in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11B shown in FIG. 5 will be described below in terms of differences from the plasma processing apparatus 1 including the substrate support 11A.

[0047] In the substrate support 11B, the bias electrode 64 extends in the intermediate region 612 and the edge region 613, and is not formed in the central region 611. The bias electrode 64 has a substantially flat ring shape and extends flatly along the horizontal direction across the intermediate region 612 and the edge region 613.

[0048] Similar to the substrate support part 11A, the substrate support part 11B includes a central electrode 62c, an intermediate electrode 62m, and an edge electrode 62e as the electrostatic chuck electrode 62. In the substrate support part 11B, the intermediate electrode 62m and the edge electrode 62e are continuous with and electrically connected to each other. In the substrate support part 11B, the intermediate electrode 62m and the edge electrode 62e are integral and have a ring shape extending around the axis AX. In the substrate support part 11B, the central electrode 62c is electrically isolated from the intermediate electrode 62m and the edge electrode 62e within the dielectric part 61. In the substrate support part 11B, the central electrode 62c and the intermediate electrode 62m are isolated from each other at the boundary between the central region 611 and the intermediate region 612. That is, a ring-shaped gap extending circumferentially around the axis AX exists between the central electrode 62c and the intermediate electrode 62m. This gap is filled with the dielectric part 61.

[0049] At least one power supply is connected to the central electrode 62 c, the intermediate electrode 62 m, and the edge electrode 62 e. To generate an electrostatic attraction force between the substrate W and the electrostatic chuck 1111, a voltage may be applied to the central electrode 62 c and the combination of the intermediate electrode 62 m and the edge electrode 62 e from a single power supply or from multiple power supplies.

[0050] 5, similarly to the bias electrode 64 shown in Fig. 3, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness shown in Fig. 4 so as to approach a uniform distribution of the sheath thickness. Furthermore, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness while suppressing the influence of the multiple electrostatic chuck electrodes 62 interposed between the bias electrode 64 and the substrate support surface.

[0051] Reference will now be made to FIG. 6 , which is a diagram illustrating a substrate support and a plurality of power supplies of a plasma processing apparatus according to yet another exemplary embodiment. The substrate support 11C shown in FIG. 6 can be employed as the substrate support 11 in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11C shown in FIG. 6 will be described below in terms of differences from the plasma processing apparatus 1 including the substrate support 11A.

[0052] In the substrate support portion 11C, the distance Lm is longer than the distance Lc and the distance Le. Note that the distance Lc and the distance Le may be substantially the same as each other or may be different from each other.

[0053] 6, the bias electrode 64, i.e., the central portion 64c, has a generally flat circular shape centered on the axis AX in the central region 611 and extends horizontally. The bias electrode 64, i.e., the intermediate portion 64m, has a generally flat ring shape extending around the axis AX in the intermediate region 612 and extends horizontally. The bias electrode 64, i.e., the edge portion 64e, has a generally flat ring shape extending around the axis AX in the edge region 613 and extends horizontally.

[0054] The bias electrode 64 extends vertically at the boundary between the central region 611 and the intermediate region 612, connecting the bias electrode 64 in the central region 611 (central portion 64c) with the bias electrode 64 in the intermediate region 612 (intermediate portion 64m). For example, the central portion 64c and the intermediate portion 64m may be connected to each other by a cylindrical wiring or multiple wirings extending vertically at the boundary between the central region 611 and the intermediate region 612. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0055] Furthermore, the bias electrode 64 extends vertically at the boundary between the intermediate region 612 and the edge region 613, connecting the bias electrode 64 in the intermediate region 612 (intermediate portion 64m) with the bias electrode 64 in the edge region 613 (edge ​​portion 64e). For example, the intermediate portion 64m and the edge portion 64e may be connected to each other by a tubular wiring or multiple wirings extending vertically at the boundary between the intermediate region 612 and the edge region 613. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0056] Reference is now made to FIG. 7 , which illustrates another example of the radial distribution of the sheath thickness. FIG. 7 illustrates the radial distribution of the plasma sheath thickness on a substrate support when a bias electrode connected to a bias power supply 51 a extends flatly and horizontally across the interior of the dielectric portion below the substrate support surface. The sheath thickness illustrated in FIG. 7 is greatest above the intermediate region WRM of a substrate placed on the intermediate region 612. The sheath thickness on the central region of the substrate (or the central region 611 of the substrate support 11), which includes the center of the substrate, is smaller than the sheath thickness on the intermediate region WRM. On the edge region (or the edge region 613) of a substrate placed on the edge region 613, the sheath thickness decreases with increasing radial distance and is smallest above the edge WE of the substrate W. With the bias electrode 64 illustrated in FIG. 6 , the radial distribution of the sheath thickness illustrated in FIG. 7 can be corrected to approach a uniform sheath thickness distribution by applying an electrical bias to the bias electrode 64.

[0057] Furthermore, the multiple electrostatic chuck electrodes 62, i.e., the central electrode 62c, the intermediate electrode 62m, and the edge electrode 62e, are electrically isolated from one another within the dielectric portion 61. Therefore, also in the substrate support portion 11C, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness while suppressing the influence of the multiple electrostatic chuck electrodes 62 interposed between the bias electrode 64 and the substrate support surface.

[0058] Reference is now made to FIG. 8 , which is a diagram illustrating a substrate support and a plurality of power supplies of a plasma processing apparatus according to yet another exemplary embodiment. The substrate support 11D shown in FIG. 8 can be employed as the substrate support 11 in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11D shown in FIG. 8 will be described below in terms of differences from the plasma processing apparatus 1 including the substrate support 11C.

[0059] In the substrate support part 11D, the bias electrode 64 extends in the central region 611 and the edge region 613, and is not formed in the intermediate region 612. The bias electrode 64, i.e., the central portion 64c, has a generally flat circular shape centered on the axis AX in the central region 611. The bias electrode 64, i.e., the edge portion 64e, has a generally flat ring shape extending circumferentially around the axis AX in the edge region 613. The vertical distance between the central portion 64c and the substrate support surface may be substantially the same as or different from the vertical distance between the edge portion 64e and the substrate support surface.

[0060] 9 is a plan view showing a bias electrode in the plasma processing apparatus shown in FIG. In the substrate support 11D, the electrostatic chuck 1111 may further include a plurality of wirings 64w connecting the central portion 64c and the edge portion 64e to each other. The plurality of wirings 64w extend in radial directions with respect to the axis AX between the central region 611 and the edge region 613 and are arranged along the circumferential direction. The plurality of wirings 64w may be arranged at equal intervals along the circumferential direction. In this example, the bias power supply 51a may be electrically coupled to one of the central portion 64c and the edge portion 64e.

[0061] According to the bias electrode 64 shown in FIG. 8, similarly to the bias electrode 64 shown in FIG. 6, by applying an electrical bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness shown in FIG. 7 so as to approach a uniform sheath thickness distribution.

[0062] Furthermore, the multiple electrostatic chuck electrodes 62, i.e., the central electrode 62 c, the intermediate electrode 62 m, and the edge electrode 62 e, are electrically isolated from one another within the dielectric portion 61. Therefore, also in the substrate support portion 11D, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness while suppressing the influence of the multiple electrostatic chuck electrodes 62 interposed between the bias electrode 64 and the substrate support surface.

[0063] Reference will now be made to FIG. 10 , which is a diagram illustrating a substrate support and a plurality of power supplies of a plasma processing apparatus according to yet another exemplary embodiment. The substrate support 11E shown in FIG. 10 can be employed as the substrate support 11 in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11E shown in FIG. 10 will be described below in terms of differences from the plasma processing apparatus 1 including the substrate support 11A.

[0064] In the substrate support portion 11E, the distance Lm is longer than the distance Lc, and the distance Le is longer than the distance Lm.

[0065] The bias electrode 64 extends vertically at the boundary between the central region 611 and the intermediate region 612, connecting the bias electrode 64 in the central region 611 (central portion 64c) with the bias electrode 64 in the intermediate region 612 (intermediate portion 64m). For example, the central portion 64c and the intermediate portion 64m may be connected to each other by a cylindrical wiring or multiple wirings extending vertically at the boundary between the central region 611 and the intermediate region 612. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0066] Furthermore, the bias electrode 64 extends vertically at the boundary between the intermediate region 612 and the edge region 613, connecting the bias electrode 64 in the intermediate region 612 (intermediate portion 64m) with the bias electrode 64 in the edge region 613 (edge ​​portion 64e). For example, the intermediate portion 64m and the edge portion 64e may be connected to each other by a tubular wiring or multiple wirings extending vertically at the boundary between the intermediate region 612 and the edge region 613. The multiple wirings are arranged in the circumferential direction around the axis AX. The multiple wirings may be arranged at equal intervals in the circumferential direction.

[0067] Reference is now made to FIG. 11 , which illustrates yet another example of the radial distribution of the sheath thickness. FIG. 11 illustrates the radial distribution of the plasma sheath thickness above a substrate support section when a bias electrode connected to a bias power supply 51 a extends flat and horizontally across the interior of the dielectric section below the substrate support surface. The sheath thickness shown in FIG. 11 is smallest at the center of the substrate (or substrate support surface) (position indicated by "0" on the horizontal axis), increases with increasing radial distance, and is largest at the edge WE of the substrate (or the edge of the substrate support surface). With the bias electrode 64 shown in FIG. 10 , the radial distribution of the sheath thickness shown in FIG. 11 can be corrected to approach a uniform sheath thickness distribution by applying an electrical bias to the bias electrode 64.

[0068] Furthermore, the multiple electrostatic chuck electrodes 62, i.e., the central electrode 62 c, the intermediate electrode 62 m, and the edge electrode 62 e, are electrically isolated from one another within the dielectric portion 61. Therefore, also in the substrate support portion 11E, by applying an electric bias to the bias electrode 64, it is possible to correct the radial distribution of the sheath thickness while suppressing the influence of the multiple electrostatic chuck electrodes 62 interposed between the bias electrode 64 and the substrate support surface.

[0069] Reference will now be made to FIG. 12 , which is a diagram illustrating a substrate support and a plurality of power supplies of a plasma processing apparatus according to yet another exemplary embodiment. The substrate support 11F shown in FIG. 12 can be employed as the substrate support 11 in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11F shown in FIG. 12 will be described below from the perspective of differences from the plasma processing apparatus 1 including the substrate support 11A.

[0070] In the substrate support 11A, the inner edge of the bias electrode 65 extends within the edge region 613 and overlaps the peripheral edge of the bias electrode 64 in the vertical direction. The inner edge of the bias electrode 65 can be located below the peripheral edge of the bias electrode 64 within the edge region 613. On the other hand, in the substrate support 11F, the bias electrode 65 and its inner edge extend within the region below the annular region 111b, and the inner edge of the bias electrode 65 is not located within the edge region 613. Note that in the illustrated example, the inner edge of the bias electrode 65 also extends within the edge region 613 in the substrate support members 11B to 11E and overlaps the peripheral edge of the bias electrode 64 in the vertical direction. However, the substrate support members 11B to 11E may also be modified so that the bias electrode 65 and its inner edge extend within the region below the annular region 111b, and the inner edge of the bias electrode 65 is not located within the edge region 613.

[0071] In each of the above-mentioned embodiments, the size of the bias electrode 64 in each of the central region 611, intermediate region 612, and edge region 613, and the vertical distance between the bias electrode 64 and the substrate support surface in each of the central region 611, intermediate region 612, and edge region 613, can be set so as to correct the distribution of the sheath thickness on the substrate support when the bias electrode extends horizontally flat across the central region 611, intermediate region 612, and edge region 613.

[0072] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0073] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E16] below.

[0074] [E1] A method for manufacturing a substrate support, comprising: a chamber; a substrate support portion including an electrostatic chuck and disposed within the chamber; a plasma generating portion configured to generate plasma from a gas in the chamber; and a bias power supply electrically coupled to the substrate support portion, wherein the electrostatic chuck includes: a dielectric portion; and a bias electrode disposed within the dielectric portion and electrically coupled to the bias power supply, wherein the dielectric portion includes: a central region intersecting a central axis of the dielectric portion; edge regions extending along a circumferential direction outside the central region; and an intermediate region between the central region and the edge region, wherein the central region, the intermediate region, and the edge region provide a substrate support surface, the bias electrode has a distribution of the vertical distance between the bias electrode and the substrate support surface along a radial direction such that the vertical distance between the bias electrode and the substrate support surface in the central region and the vertical distance between the bias electrode and the substrate support surface in the intermediate region are different from each other, and the vertical distance between the bias electrode and the substrate support surface in the intermediate region and the vertical distance between the bias electrode and the substrate support surface in the edge region are different from each other, or the bias electrode is not formed in the central region or the intermediate region among the central region, the intermediate region, and the edge region.

[0075] [E2] The plasma processing apparatus described in E1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in the edge region and shorter than the vertical distance between the bias electrode and the substrate support surface in the central region.

[0076] [E3] The plasma processing apparatus according to E1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in each of the central region and the edge region.

[0077] [E4] The plasma processing apparatus according to E3, wherein the vertical distance between the bias electrode and the substrate support surface in the central region and the vertical distance between the bias electrode and the substrate support surface in the edge region are substantially the same as each other.

[0078] [E5] The plasma processing apparatus described in E1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in the central region, and the vertical distance between the bias electrode and the substrate support surface in the edge region is longer than the vertical distance between the bias electrode and the substrate support surface in the intermediate region.

[0079] [E6] The plasma processing apparatus according to any one of E2 to E5, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed in the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending in the central region, an intermediate electrode extending in the intermediate region, and an edge electrode extending in the edge region, the central electrode, the intermediate electrode, and the edge electrode being electrically isolated from one another within the dielectric portion, the central electrode and the intermediate electrode being isolated from one another at a boundary between the central region and the intermediate region, and the intermediate electrode and the edge electrode being isolated from one another at a boundary between the intermediate region and the edge region.

[0080] [E7] The plasma processing apparatus described in E6, wherein the bias electrode extends flat along a direction intersecting the vertical direction in each of the central region, the intermediate region, and the edge region, and has a circular shape in the central region and a ring shape in each of the intermediate region and the edge region, the central electrode, the intermediate electrode, and the edge electrode extend flat along the direction intersecting the vertical direction and are at substantially the same distance from each other along the vertical direction from the substrate support surface, and the central electrode has a circular shape, and the intermediate electrode and the edge electrode have ring shapes.

[0081] [E8] The plasma processing apparatus according to E1, wherein the bias electrode extends within the intermediate region and the edge region, and is not formed in the central region.

[0082] [E9] The plasma processing apparatus of E8, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed in the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending in the central region, an intermediate electrode extending in the intermediate region, and an edge electrode extending in the edge region, the intermediate electrode and the edge electrode being continuous with each other and electrically connected to each other, the central electrode being electrically isolated from the intermediate electrode and the edge electrode within the dielectric portion, and the central electrode and the intermediate electrode being isolated from each other at a boundary between the central region and the intermediate region.

[0083] [E10] The plasma processing apparatus described in E9, wherein the bias electrode extends flatly across the intermediate region and the edge region in a direction intersecting the vertical direction and has a ring shape, the central electrode, the intermediate electrode, and the edge electrode extend flatly along a direction intersecting the vertical direction and are at substantially the same distance from each other in the vertical direction from the substrate support surface, and the central electrode has a circular shape, and the intermediate electrode and the edge electrode are integral and have a ring shape.

[0084] [E11] The plasma processing apparatus according to E1, wherein the bias electrode extends within the central region and the edge region, and is not formed in the intermediate region.

[0085] [E12] The plasma processing apparatus according to E11, wherein the electrostatic chuck includes a plurality of wirings that connect a central portion of the bias electrode extending in the central region to an edge portion of the bias electrode extending in the edge region, and the plurality of wirings extend radially from the central axis between the central region and the edge region and are arranged along a circumferential direction.

[0086] [E13] The plasma processing apparatus of E12, wherein the vertical distance between the bias electrode and the substrate support surface in the central region is substantially the same as the vertical distance between the bias electrode and the substrate support surface in the edge region.

[0087] [E14] The plasma processing apparatus according to any one of E11 to E13, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed in the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending in the central region, an intermediate electrode extending in the intermediate region, and an edge electrode extending in the edge region, the central electrode, the intermediate electrode, and the edge electrode being electrically isolated from one another within the dielectric portion, the central electrode and the intermediate electrode being electrically isolated from one another at a boundary between the central region and the intermediate region, and the intermediate electrode and the edge electrode being electrically isolated from one another at a boundary between the intermediate region and the edge region.

[0088] [E15] The plasma processing apparatus described in E14, wherein the bias electrode extends flat along a direction intersecting the vertical direction in each of the central region and the edge region, and has a circular shape in the central region and a ring shape in the edge region, the central electrode, the intermediate electrode, and the edge electrode extend flat along the direction intersecting the vertical direction and are at substantially the same distance from each other along the vertical direction from the substrate support surface, and the central electrode has a circular shape, and the intermediate electrode and the edge electrode have ring shapes.

[0089] [E16] The plasma processing apparatus according to any one of E1 to E15, wherein the substrate support further includes a base, and the electrostatic chuck is disposed on the base.

[0090] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0091] 1...plasma processing apparatus, 10...chamber, 11...substrate support portion, 12...plasma generation portion, 1111...electrostatic chuck, 61...dielectric portion, 611...central region, 612...intermediate region, 613...edge region, 64...bias electrode, 51a...bias power supply

Claims

1. A method for manufacturing a substrate support, comprising: a chamber; a substrate support portion disposed within the chamber, the substrate support portion including an electrostatic chuck; a plasma generating portion configured to generate plasma from a gas in the chamber; and a bias power supply electrically coupled to the substrate support portion, wherein the electrostatic chuck includes: a dielectric portion; and a bias electrode disposed within the dielectric portion and electrically coupled to the bias power supply, the dielectric portion including: a central region intersecting a central axis of the dielectric portion; edge regions extending circumferentially outside the central region; and an intermediate region between the central region and the edge region, wherein the central region, the intermediate region, and the edge region provide a substrate support surface, the bias electrode has a distribution of the vertical distance between the bias electrode and the substrate support surface along a radial direction such that the vertical distance between the bias electrode and the substrate support surface in the central region and the vertical distance between the bias electrode and the substrate support surface in the intermediate region are different from each other, and the vertical distance between the bias electrode and the substrate support surface in the intermediate region and the vertical distance between the bias electrode and the substrate support surface in the edge region are different from each other, or the bias electrode is not formed in the central region or the intermediate region among the central region, the intermediate region, and the edge region.

2. The plasma processing apparatus of claim 1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in the edge region and shorter than the vertical distance between the bias electrode and the substrate support surface in the central region.

3. The plasma processing apparatus of claim 1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in each of the central region and the edge region.

4. The plasma processing apparatus of claim 3, wherein the vertical distance between the bias electrode and the substrate support surface in the central region and the vertical distance between the bias electrode and the substrate support surface in the edge region are substantially the same as each other.

5. The plasma processing apparatus of claim 1, wherein the vertical distance between the bias electrode and the substrate support surface in the intermediate region is longer than the vertical distance between the bias electrode and the substrate support surface in the central region, and the vertical distance between the bias electrode and the substrate support surface in the edge region is longer than the vertical distance between the bias electrode and the substrate support surface in the intermediate region.

6. The plasma processing apparatus of any one of claims 2 to 5, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed within the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending within the central region, an intermediate electrode extending within the intermediate region, and an edge electrode extending within the edge region, the central electrode, the intermediate electrode, and the edge electrode being electrically isolated from one another within the dielectric portion, the central electrode and the intermediate electrode being isolated from one another at a boundary between the central region and the intermediate region, and the intermediate electrode and the edge electrode being isolated from one another at a boundary between the intermediate region and the edge region.

7. The plasma processing apparatus of claim 6, wherein the bias electrode extends flat along a direction intersecting the vertical direction in each of the central region, intermediate region, and edge region, and has a circular shape in the central region and a ring shape in each of the intermediate region and edge region; the central electrode, intermediate electrode, and edge electrode extend flat along the direction intersecting the vertical direction and are at substantially the same distance from each other along the vertical direction from the substrate support surface; and the central electrode has a circular shape, and the intermediate electrode and edge electrode have ring shapes.

8. The plasma processing apparatus of claim 1, wherein the bias electrode extends within the intermediate region and the edge region, and is not formed in the central region.

9. The plasma processing apparatus of claim 8, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed within the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending within the central region, an intermediate electrode extending within the intermediate region, and an edge electrode extending within the edge region, the intermediate electrodes and the edge electrodes being continuous with and electrically connected to each other, the central electrode being electrically isolated from the intermediate electrode and the edge electrode within the dielectric portion, and the central electrode and the intermediate electrode being isolated from each other at a boundary between the central region and the intermediate region.

10. The plasma processing apparatus of claim 9, wherein the bias electrode extends flat across the intermediate region and the edge region in a direction intersecting the vertical direction and has a ring shape; the central electrode, the intermediate electrode, and the edge electrode extend flat along a direction intersecting the vertical direction and are at substantially the same distance from each other along the vertical direction from the substrate support surface; the central electrode has a circular shape, and the intermediate electrode and the edge electrode are integral and have a ring shape.

11. The plasma processing apparatus of claim 1, wherein the bias electrode extends within the central region and the edge region, and is not formed in the intermediate region.

12. The plasma processing apparatus according to claim 11, wherein the electrostatic chuck includes a plurality of wirings connecting a central portion of the bias electrode extending in the central region with an edge portion of the bias electrode extending in the edge region, and the plurality of wirings extend radially from the central axis between the central region and the edge region and are arranged along a circumferential direction.

13. The plasma processing apparatus of claim 12, wherein the vertical distance between the bias electrode and the substrate support surface in the central region is substantially the same as the vertical distance between the bias electrode and the substrate support surface in the edge region.

14. The plasma processing apparatus of any one of claims 11 to 13, wherein the electrostatic chuck further includes a plurality of electrostatic chuck electrodes disposed within the dielectric portion and between the bias electrode and the substrate support surface, the plurality of electrostatic chuck electrodes including a central electrode extending within the central region, an intermediate electrode extending within the intermediate region, and an edge electrode extending within the edge region, the central electrode, the intermediate electrode, and the edge electrode being electrically isolated from one another within the dielectric portion, the central electrode and the intermediate electrode being electrically isolated from one another at a boundary between the central region and the intermediate region, and the intermediate electrode and the edge electrode being electrically isolated from one another at a boundary between the intermediate region and the edge region.

15. The plasma processing apparatus of claim 14, wherein the bias electrode extends flat in the direction intersecting the vertical direction in each of the central region and the edge region, has a circular shape in the central region, and has a ring shape in the edge region; the central electrode, the intermediate electrode, and the edge electrode extend flat in the direction intersecting the vertical direction, and are at substantially the same distance from each other along the vertical direction from the substrate support surface; and the central electrode has a circular shape, and the intermediate electrode and the edge electrode have ring shapes.

16. The plasma processing apparatus according to claim 1, wherein the substrate support further includes a base, and the electrostatic chuck is disposed on the base.

Images