Gas control system for semiconductor equipment

Abstract

A gas control system for semiconductor equipment, according to the present invention, comprises: a first process chamber; a first discharge pipe; a first inlet pipe; an energy loss member that causes energy loss of gas; a sub-pipe; a main pipe; a first energy control member that controls first energy of the gas passing through the first inlet pipe; and a second energy control member that controls second energy of the gas in the sub-pipe, wherein the gas is provided to the energy loss member through the first discharge pipe and the first inlet pipe, and thereafter, the gas is discharged to the outside through the sub-pipe and the main pipe, the first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy control member, and the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy control member.

Description

Gas control system for semiconductor equipment

[0001] The present invention relates to a gas control system for semiconductor equipment. Specifically, the present invention relates to a gas control system for semiconductor equipment that controls the pressure of gases discharged after a semiconductor process is performed, thereby improving the stability of a semiconductor process chamber and the spatial efficiency of a semiconductor production line.

[0002]

[0003] Typically, a semiconductor manufacturing plant (semiconductor production line) may include manufacturing equipment and the utilities necessary for its operation. These utilities may include various pipes, pipes, wiring, facilities, ducts, and other equipment for providing electricity, gas, water, chemicals, and other utilities. These pipes, pipes, wiring, and other equipment may be installed in a confined space.

[0004] If a large number of pipes are connected to the main pipe of a utility, the main pipe of said utility may be overloaded, and if a small number of pipes are connected to the main pipe of said utility, the space efficiency of the semiconductor manufacturing plant may be reduced.

[0005] Accordingly, research has been ongoing recently on ways to improve the factory efficiency of semiconductor manufacturing plants by increasing the number of pipes connected to the main pipe of the utility or the number of semiconductor process chambers connected to the main pipe of the utility while reducing the load applied to the main pipe of the utility.

[0006]

[0007] The technical problem to be solved by the present invention relates to a gas control system for semiconductor equipment that controls the energy of gas passing through a sub-pipe connected to a main pipe.

[0008] When the gas control system for semiconductor equipment of the present invention is used, a semiconductor production line with improved space efficiency can be provided by increasing the number of semiconductor process chambers relative to the number of main pipes.

[0009] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0010]

[0011] According to some embodiments of the present invention for achieving the above technical problem, a gas control system for a semiconductor facility includes a first process chamber in which a first semiconductor process is performed, a first exhaust pipe connected to the first process chamber and through which a gas used in the first semiconductor process is discharged, a first inlet pipe connected to the first exhaust pipe, an energy loss member connected to the first inlet pipe and configured to lose energy of the gas provided through the first inlet pipe, a sub pipe through which the gas passing through the energy loss member is discharged, a main pipe connected to the sub pipe, a first energy control member disposed within the first inlet pipe and configured to control a first energy of the gas passing through the first inlet pipe, and a second energy control member disposed within the sub pipe and configured to control a second energy of the gas through the sub pipe, wherein the gas is provided to the energy loss member through the first exhaust pipe and the first inlet pipe, and thereafter, the gas is discharged to the outside through the sub pipe and the main pipe, and the first energy of the gas in the first inlet pipe is maintained at a constant level by the first energy control member. The second energy of the gas in the sub-pipe is controlled to a constant value by the second energy control member.

[0012] A gas control system for semiconductor equipment with improved stability can be provided because the energy of the gas inside the pipe is constantly controlled.

[0013] In some embodiments, the first energy comprises first pressure energy and first kinetic energy, and the first energy control member controls the first pressure energy of the gas to a constant value.

[0014] In some embodiments, the second energy comprises second pressure energy and second kinetic energy, and the first kinetic energy of the gas within the first inlet pipe is less than the second kinetic energy of the gas within the sub-pipe.

[0015] In some embodiments, the width of the first inlet pipe is greater than the width of the sub-pipe.

[0016] In some embodiments, the sub-pipe includes a portion whose width gradually decreases as it moves from the energy loss member toward the main pipe.

[0017] A gas control system for a semiconductor facility according to some embodiments includes a scrubber, wherein the energy loss member includes a scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the gas, a scrubbing plate disposed within the scrubbing chamber, and a plurality of scrubbing holes penetrating the scrubbing plate, and the gas loses energy as it passes through the plurality of scrubbing holes.

[0018] A gas control system for a semiconductor facility according to some embodiments further comprises a solution supply nozzle for supplying a scrubbing solution to an upper surface of the scrubbing plate, wherein at least a portion of the impurities contained in the gas are dissolved in the scrubbing solution on the upper surface of the scrubbing plate after the gas passes upwardly through the plurality of scrubbing holes.

[0019] A gas control system for a semiconductor facility according to some embodiments further comprises a second process chamber in which a second semiconductor process is performed, the second process chamber being different from the first process chamber, a second exhaust pipe connected to the second process chamber and through which a gas used in the second semiconductor process is exhausted, a second inlet pipe having one end connected to the second exhaust pipe and the other end connected to the energy loss member, and a third energy control member disposed in the second inlet pipe and controlling a third energy of the gas passing through the second inlet pipe, wherein the first energy includes a first pressure energy and a first kinetic energy, and the third energy includes a third pressure energy and a third kinetic energy, and the first pressure energy and the third pressure energy are identical.

[0020] In some embodiments, the second energy comprises a second pressure energy and a second kinetic energy, and the third kinetic energy of the gas within the second inlet pipe is less than the second kinetic energy of the gas within the sub-pipe.

[0021] A gas control system for a semiconductor facility according to some embodiments further includes a second process chamber in which a second semiconductor process is performed, the second process chamber being different from the first process chamber, and a second exhaust pipe having one side connected to the second process chamber and the other side connected to the first inlet pipe, through which a gas used in the second semiconductor process is exhausted.

[0022] A gas control system for a semiconductor facility according to some embodiments further comprises a first pressure measuring device for measuring a first pressure of a gas passing through the first inlet pipe, wherein the first energy control member comprises a rotatable first rotation module, and when the magnitude of the absolute value of the first pressure measured by the first pressure measuring device is greater than a first pressure setting value, the rotation speed of the first rotation module is reduced, and when the magnitude of the absolute value of the first pressure measured by the first pressure measuring device is less than the first pressure setting value, the rotation speed of the first rotation module is increased.

[0023] A gas control system for a semiconductor facility according to some embodiments further comprises a second pressure measuring device for measuring a second pressure of a gas passing through the sub-pipe, wherein the second energy control member comprises a rotatable second rotation module, and when the magnitude of the absolute value of the second pressure measured by the second pressure measuring device is greater than a second set value, the rotation speed of the second rotation module is reduced, and when the magnitude of the absolute value of the second pressure measured by the second pressure measuring device is less than the second set value, the rotation speed of the second rotation module is increased.

[0024] In some embodiments, the first pressure remains constant even if the rotational speed of the second rotating module changes.

[0025] According to some embodiments, a gas control system for a semiconductor facility includes a plurality of process chambers in which a semiconductor process is performed, a plurality of exhaust pipes connected to each of the plurality of process chambers and through which a gas used in the semiconductor process performed in the plurality of process chambers is discharged from the plurality of process chambers, an inlet pipe connected to all of the plurality of exhaust pipes, an energy loss member connected to the inlet pipe and configured to lose energy of the gas provided through the inlet pipe, a sub pipe through which the gas passing through the energy loss member is discharged, a main pipe connected to the sub pipe, and an energy control member disposed within the sub pipe and configured to control energy of the gas passing through the sub pipe, wherein the gas is provided to the energy loss member through the plurality of exhaust pipes and the inlet pipe, and thereafter, the gas is discharged to the outside through the sub pipe and the main pipe, and a ratio of a sum of cross-sectional areas of each of the plurality of exhaust pipes to a cross-sectional area of ​​the sub pipe at a portion where the main pipe and the sub pipe are connected is 2 or more and 10 or less.

[0026] Since the cross-sectional area reduction rate of the sub-pipe compared to the exhaust pipe is 50% to 90%, space efficiency is improved and a semiconductor production line with improved stability can be provided.

[0027] A gas control system for a semiconductor facility according to some embodiments includes a process chamber in which a semiconductor process is performed, an exhaust pipe connected to the process chamber and through which a gas used in the semiconductor process is discharged, an inlet pipe connected to the exhaust pipe, an energy loss member connected to the inlet pipe and for losing energy of the gas provided through the inlet pipe, a sub pipe through which the gas passing through the energy loss member is discharged, a main pipe connected to the sub pipe, a velocity meter for measuring a flow rate of the gas passing through the sub pipe, a pressure meter for measuring a pressure of the gas passing through the sub pipe, and an energy control member disposed within the sub pipe and controlling the energy of the gas passing through the sub pipe, the energy control member including a rotatable rotation module, wherein the gas is provided to the energy loss member through the exhaust pipe and the inlet pipe, and thereafter, the gas is discharged to the outside through the sub pipe and the main pipe, and the energy of the gas includes pressure energy and kinetic energy, the kinetic energy of the gas is proportional to the flow rate of the gas, the pressure energy of the gas is proportional to the pressure of the gas, and the energy measured by the velocity meter is The kinetic energy of the gas is calculated using the flow rate of the gas, and the pressure energy of the gas is calculated using the pressure of the gas measured by the pressure measuring device, and when the sum of the kinetic energy of the gas and the pressure energy of the gas exceeds a set value, the rotation speed of the rotation module of the energy control member is reduced, and when the sum of the kinetic energy of the gas and the pressure energy of the gas is less than the set value, the rotation speed of the rotation module of the energy control member is increased.

[0028] Specific details of other embodiments are included in the description and drawings of the invention.

[0029]

[0030] The gas control system for semiconductor equipment of the present invention comprises a first energy control member, a second energy control member, and an energy loss member. First, the energy of gas discharged from a semiconductor process chamber can be controlled to a constant level through the first energy control member.

[0031] Since the energy of the above gas is controlled at a constant level, the stability of the semiconductor process chamber can be improved.

[0032] Additionally, the energy loss member of the present invention may include a scrubber. The energy loss member may include at least one scrubbing plate. Scrubbing holes are formed within the scrubbing plate, penetrating the scrubbing plate. As gas rises and passes through the scrubbing holes, bubbles may be formed within the scrubbing solution flowing on the upper surface of the scrubbing plate.

[0033] As the bubbles form, the contact area between the scrubbing solution and the gas increases. This increased contact area allows more hydrophilic impurities in the gas to dissolve in the scrubbing solution. Consequently, the gas, free of contaminants (impurities), can be discharged outside the semiconductor production line.

[0034] Additionally, energy of the gas may be lost each time the gas ascends and passes through the scrubbing hole within the energy loss member. The energy of the gas passing through the energy loss member can be controlled at a constant level through the second energy control member. This allows the gas to be safely transported to the utility duct.

[0035] In addition, when the gas control system for semiconductor equipment of the present invention is used, the number of semiconductor process chambers can be increased relative to the number of main pipes, thereby providing a semiconductor production line with improved space efficiency.

[0036]

[0037] FIG. 1 is a drawing for explaining a gas control system for semiconductor equipment according to some embodiments of the present invention.

[0038] Fig. 2 is an exemplary cross-sectional view for explaining the energy loss member of Fig. 1.

[0039] Figure 3 is an exemplary enlarged view of the R region of Figure 2.

[0040] Figure 4 is an exemplary enlarged view of the P area and Q area of ​​Figure 1.

[0041] Figure 5 is an exemplary drawing for explaining the energy control member of Figure 1.

[0042] FIGS. 6 to 13 are drawings for explaining a gas control system for semiconductor equipment according to several other embodiments of the present invention.

[0043] FIG. 14 is a drawing for explaining an operation method of a gas control system for semiconductor equipment according to some embodiments of the present invention.

[0044]

[0045] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments described below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0046] In addition, the terminology used in this specification is used to describe embodiments and is not intended to limit and / or restrict the disclosed invention. The singular expression includes plural expression unless the context clearly indicates otherwise. In this specification, the terms "comprise" or "have" and the like are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0047] Additionally, terms including ordinal numbers such as “first,” “second,” etc. used herein may be used to describe various components, but the components are not limited by the terms, and the terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The term “and / or” includes any combination of a plurality of related listed items or any item among a plurality of related listed items.

[0048] Meanwhile, the terms “upper”, “lower”, “side wall”, “top surface” and “lower surface” used in the description below are defined based on the drawing, and the shape and position of each component are not limited by these terms.

[0049] The terminology used herein is for the purpose of describing embodiments only and is not intended to limit the present invention. In this specification, the singular also includes the plural unless the context clearly dictates otherwise. As used herein, the terms "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0050] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0051] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing with reference to the attached drawings, identical or corresponding components are given the same reference numerals regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

[0052]

[0053] Hereinafter, first, a gas control system for semiconductor equipment according to some embodiments of the present invention will be described with reference to FIGS. 1 to 5.

[0054] FIG. 1 is a diagram illustrating a gas control system for semiconductor equipment according to some embodiments of the present invention. FIG. 2 is an exemplary cross-sectional view illustrating an energy loss member of FIG. 1. FIG. 3 is an exemplary enlarged view illustrating an R region of FIG. 2. FIG. 4 is an exemplary enlarged view illustrating an P region and a Q region of FIG. 1. FIG. 5 is an exemplary diagram illustrating an energy control member of FIG. 1.

[0055] First, referring to FIG. 1, a gas control system for a semiconductor facility according to some embodiments of the present invention may include a process chamber (110), an energy loss member (200), an exhaust pipe (120), an inlet pipe (130), a sub pipe (150), a main pipe (170), a utility pipe (180), a utility duct (300), a first energy control member (140), and a second energy control member (160).

[0056] The process chamber (110) may be a chamber where semiconductor processes are performed. To manufacture a semiconductor device, various semiconductor processes must be performed on a wafer. For example, a film must be deposited on the wafer (a deposition process), and the film must be etched (an etching process) to form a pattern included in the semiconductor device. Furthermore, after the deposition process and / or etching process are performed, a cleaning process must be performed to clean the wafer and / or the process chamber (110).

[0057] The deposition process may include, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), and / or atomic layer deposition (ALD). The etching process may include, for example, a dry etching process, a wet etching process, and / or an ashing process. The cleaning process may include, for example, a wet cleaning process, a dry cleaning process, and / or a vapor cleaning process.

[0058] In another embodiment, the deposition process, the etching process and / or the cleaning process may be performed simultaneously.

[0059] When various semiconductor processes are performed within a process chamber (110), byproducts may be generated. These byproducts must be discharged outside the semiconductor production line through multiple pipes. At this time, the pressure, energy, etc. applied to these pipes must be adjusted to effectively control the process chamber (110) and utility duct (300). If these byproducts contain substances harmful to the human body, they must be removed and discharged.

[0060] The exhaust pipe (120) may be connected to the process chamber (110). The exhaust pipe (120) may be interposed between the process chamber (110) and the inlet pipe (130). The gas used in the semiconductor process performed in the process chamber (110) may be discharged to the outside of the process chamber (110) through the exhaust pipe (120).

[0061] The exhaust pipe (120) may be connected to the inlet pipe (130). The inlet pipe (130) may be interposed between the exhaust pipe (120) and an energy loss member (200) to be described later. That is, the inlet pipe (130) may connect the exhaust pipe (120) and the energy loss member (200) to each other. The gas discharged from the process chamber (110) may be provided to the energy loss member (200) through the exhaust pipe (120) and the inlet pipe (130).

[0062] In Fig. 1, the third width (W3) of the discharge pipe (120) is illustrated as being smaller than the width of the inlet pipe (130) (W1 of Fig. 2), but the technical idea of ​​the present invention is not limited thereto. The third width (W3) of the discharge pipe (120) may be the same as the first width (W1 of Fig. 2) of the inlet pipe (130), and of course, the third width (W3) of the discharge pipe (120) may be larger than the first width (W1 of Fig. 2) of the inlet pipe (130).

[0063] An energy loss member (200) may be placed between an inlet pipe (130) and a sub-pipe (150). The gas is supplied to the energy loss member (200) through the inlet pipe (130). The gas passing through the energy loss member (200) may be discharged to the outside of the energy loss member (200) through the sub-pipe (150).

[0064] In some embodiments, the gas may have energy. The energy may include pressure energy and kinetic energy. The energy may include other energies besides pressure energy and kinetic energy, but for convenience of explanation, all energies other than pressure energy and kinetic energy are assumed to be zero.

[0065] After passing through the energy loss member (200), the energy of the gas may be lost. That is, the energy loss member (200) may cause the energy of the gas to be lost. A detailed description of this will be provided later.

[0066] The sub-pipe (150) may be connected to the energy loss member (200). The gas passing through the energy loss member (200) may be discharged to the outside through the sub-pipe (150). The sub-pipe (150) may be interposed between the energy loss member (200) and the main pipe (170).

[0067] The main pipe (170) may be interposed between the sub pipe (150) and the utility duct (300). The main pipe (170) may be connected to the sub pipe (150). The gas passing through the sub pipe (150) may be provided to the main pipe (170). The main pipe (170) may be provided in the floor space of a semiconductor production line.

[0068] The utility duct (300) may be connected to the main pipe (170). The utility duct (300) may provide pressure to the main pipe (170). The gas may be moved using the pressure provided by the utility duct (300). The gas passing through the utility duct (300) may be discharged outside the semiconductor production line through the utility pipe (180).

[0069] In some embodiments, the energy loss member (200) may include a scrubber. When a semiconductor process is performed within the process chamber (110), various byproducts may be generated. These byproducts may contain substances harmful to the human body. If these byproducts contain substances harmful to the human body, they must be removed and discharged.

[0070] The above scrubber can be used to remove substances harmful to the human body from the byproducts generated in the process chamber (110). That is, the energy loss member (200) can scrub impurities contained in the gas while simultaneously losing energy from the gas. The impurities may include hydrophilic substances.

[0071] However, the technical idea of ​​the present invention is not limited thereto. It goes without saying that the energy loss member (200) may have a configuration other than the above scrubber.

[0072] Referring to FIGS. 2 and 3, an energy loss member (200) according to some embodiments of the present invention may include a scrubbing chamber (2100), a separating wall (2200), a first scrubbing plate (2300), a second scrubbing plate (2400), a third scrubbing plate (2500), a spray nozzle (2210), a solution supply nozzle (2230), and a demister (2600).

[0073] First, a scrubbing chamber (2100) may be provided. The scrubbing chamber (2100) may be an external housing of the energy loss member (200). The gas may be provided into the interior of the scrubbing chamber (2100). The gas may contain impurities.

[0074] For example, the gas may be provided into the interior of the scrubbing chamber (2100) through an inlet pipe (130). The inlet pipe (130) may be formed on the upper wall of the scrubbing chamber (2100) or on the side wall of the scrubbing chamber (2100). In addition, the inlet pipe (130) may be formed on the upper side of the side wall of the scrubbing chamber (2100) or on the lower side of the side wall.

[0075] Impurities contained in the gas may be dissolved in a scrubbing solution within the scrubbing chamber (2100). The scrubbing chamber (2100) may define a scrubbing space (2150). The scrubbing space (2150) may be a space where a scrubbing process is performed, in which impurities contained in the gas are dissolved in the scrubbing solution.

[0076] In some embodiments, the scrubbing space (2150) may include a first sub-space (2150a) and a second sub-space (2150b). The first sub-space (2150a) and the second sub-space (2150b) may be separated by a partition wall (2200). The first sub-space (2150a) and the second sub-space (2150b) may be defined by the partition wall (2200).

[0077] The separating wall (2200) may be positioned within the scrubbing chamber (2100). In some embodiments, the separating wall (2200) may be attached to the upper wall of the scrubbing chamber (2100). The separating wall (2200) may extend from the upper wall of the scrubbing chamber (2100) in a second direction (D2). The second direction (D2) may be a direction perpendicular to the ground.

[0078] In some embodiments, the separating wall (2200) may have a bar shape in a plan view. The separating wall (2200) may extend in a third direction (D3) in a plan view. One end of the separating wall (2200) may be in contact with and connected to the third inner wall of the scrubbing chamber (2100), and the other end of the separating wall (2200) may be in contact with and connected to the fourth inner wall of the scrubbing chamber (2100). The separating wall (2200) may include a long side extending in the third direction (D3) and a short side extending in the first direction (D1), but the technical idea of ​​the present invention is not limited thereto.

[0079] In some embodiments, the scrubbing chamber (2100) may include a first inner wall (2100SW1), a second inner wall (2100SW2), a third inner wall, and a fourth inner wall.

[0080] The first inner wall (2100SW1) of the scrubbing chamber (2100) may face the separating wall (2200). The second inner wall (2100SW2) of the scrubbing chamber (2100) may face the first inner wall (2100SW1) of the scrubbing chamber (2100) in a first direction (D1). The third inner wall and the fourth inner wall may face each other in a third direction (D3) and may intersect the first inner wall (2100SW1) and the second inner wall (2100SW2), respectively.

[0081] The separation wall (2200) can define a first sub-space (2150a) and a second sub-space (2150b). The separation wall (2200) can separate the scrubbing space (2150) into the first sub-space (2150a) and the second sub-space (2150b).

[0082] A first scrubbing process may be performed in a first sub-space (2150a). A second scrubbing process may be performed in a second sub-space (2150b). The first scrubbing process may be a process in which a portion of the impurities are dissolved in a first scrubbing solution (2250). The second scrubbing process may be a process in which another portion of the impurities are dissolved in a second scrubbing solution (2270).

[0083] In this specification, the first direction (D1) and the third direction (D3) may intersect with each other. The first direction (D1) and the second direction (D2) may intersect with each other. The second direction (D2) and the third direction (D3) may intersect with each other. That is, in this specification, the first direction (D1), the second direction (D2), and the third direction (D3) may be substantially perpendicular to each other.

[0084] A first scrubbing plate (2300), a second scrubbing plate (2400), and a third scrubbing plate (2500) may be arranged inside the scrubbing space (2150). Specifically, the first scrubbing plate (2300), the second scrubbing plate (2400), and the third scrubbing plate (2500) may be arranged inside the second sub-space (2150b).

[0085] In FIG. 2, the energy loss member (200) of the present invention is illustrated as including three scrubbing plates, but the technical idea of ​​the present invention is not limited thereto. The energy loss member (200) according to some embodiments of the present invention may include one or more scrubbing plates. That is, the scrubbing plates may be arranged one, two, or four or more within the second sub-space (2150b).

[0086] The first scrubbing plate (2300) may be disposed at the lowest position among the scrubbing plates disposed within the second sub-space (2150b). One end of the first scrubbing plate (2300) may be connected to and fixed to the partition wall (2200). Specifically, one end of the first scrubbing plate (2300) may be connected to and fixed to a side wall of the partition wall (2200) facing the second sub-space (2150b). The first scrubbing plate (2300) may be connected to the partition wall (2200) and extend in a first direction (D1) intersecting the partition wall (2200). More specifically, the first scrubbing plate (2300) may be placed on a plane along which the first direction (D1) and the third direction (D3) extend.

[0087] In some embodiments, another portion of the first scrubbing plate (2300) may be connected and fixed to the inner walls of the scrubbing chamber (2100). Specifically, the first scrubbing plate (2300) may be connected to the separating wall (2200) in the second sub-space (2150b), the third inner wall of the scrubbing chamber (2100), and the fourth inner wall of the scrubbing chamber (2100).

[0088] However, the first scrubbing plate (2300) may not be connected and fixed to the second inner wall (2100SW2) of the scrubbing chamber (2100). The first scrubbing plate (2300) may be spaced apart from the second inner wall (2100SW2) of the scrubbing chamber (2100) in the first direction (D1). The space from the other end of the first scrubbing plate (2300) to the second inner wall (2100SW2) of the scrubbing chamber (2100) may be a space in which the second scrubbing solution (2270), which will be described later, flows downward (for example, in the second direction (D2)).

[0089] The energy loss member (200) according to some embodiments may further include a first scrubbing hole (2300H) and a first scrubbing wall (2350).

[0090] The first scrubbing hole (2300H) may be formed inside the first scrubbing plate (2300). The first scrubbing hole (2300H) may extend from the lower surface of the first scrubbing plate (2300) to the upper surface of the first scrubbing plate (2300). That is, the first scrubbing hole (2300H) may penetrate the first scrubbing plate (2300) in the second direction (D2). Gas may rise in the second direction (D2) by passing through the first scrubbing hole (2300H) (see drawing symbol 2300u).

[0091] The upper surface of the first scrubbing plate (2300) can face the demister (2600) to be described later, and the lower surface of the first scrubbing plate (2300) can face the scrubbing solution storage tank (2700) to be described later.

[0092] A first scrubbing wall (2350) may be attached to the other end of the first scrubbing plate (2300). The first scrubbing wall (2350) may be interposed between the first scrubbing plate (2300) and the second inner wall (2100SW2) of the scrubbing chamber (2100). The first scrubbing wall (2350) may extend in a second direction (D2). In some embodiments, a portion of the first scrubbing wall (2350) may protrude from the upper surface of the first scrubbing plate (2300) in the second direction (D2). Another portion of the first scrubbing wall (2350) may protrude from the lower surface of the first scrubbing plate (2300) in the second direction (D2).

[0093] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the first scrubbing plate (2300) among the first scrubbing walls (2350) may be smaller than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the first scrubbing plate (2300), but the technical idea of ​​the present invention is not limited thereto.

[0094] In some embodiments, at least a portion of the first scrubbing plate (2300) of the first scrubbing wall (2350) protruding in the second direction (D2) from the lower surface thereof may be placed in a scrubbing solution (2750) in which impurities are dissolved, which will be described later, but the technical idea of ​​the present invention is not limited thereto.

[0095] The second scrubbing plate (2400) may be disposed on the first scrubbing plate (2300). Specifically, the second scrubbing plate (2400) may be disposed on the upper surface of the first scrubbing plate (2300). One end of the second scrubbing plate (2400) may be connected to and fixed to the second inner wall (2100SW2) of the scrubbing chamber (2100). The second scrubbing plate (2400) may be connected to the second inner wall (2100SW2) of the scrubbing chamber (2100) and may extend in a first direction (D1) intersecting the second inner wall (2100SW2) of the scrubbing chamber (2100). More specifically, the second scrubbing plate (2400) may be placed on a plane in which the first direction (D1) and the third direction (D3) extend.

[0096] Likewise, the second scrubbing plate (2400) may be connected to and fixed to the third inner wall of the scrubbing chamber (2100) and the fourth inner wall of the scrubbing chamber (2100). However, the other end of the second scrubbing plate (2400) may not be connected to and fixed to the separating wall (2200). The other end of the second scrubbing plate (2400) may be spaced apart from the separating wall (2200) in the first direction (D1). The space from the other end of the second scrubbing plate (2400) to the separating wall (2200) may be a space in which a second scrubbing solution (2270), which will be described later, flows downward (for example, in the second direction (D2)).

[0097] The energy loss member (200) according to some embodiments may further include a second scrubbing hole (2400H) and a second scrubbing wall (2450).

[0098] The second scrubbing hole (2400H) may be formed within the second scrubbing plate (2400). The second scrubbing hole (2400H) may extend from the lower surface of the second scrubbing plate (2400) to the upper surface of the second scrubbing plate (2400). The second scrubbing hole (2400H) may penetrate the second scrubbing plate (2400) in the second direction (D2). Gas may rise in the second direction (D2) by passing through the second scrubbing hole (2400H).

[0099] The upper surface of the second scrubbing plate (2400) can face the demister (2600) to be described later, and the lower surface of the second scrubbing plate (2400) can face the upper surface of the first scrubbing plate (2300).

[0100] A second scrubbing wall (2450) may be attached to the other end of the second scrubbing plate (2400). The second scrubbing wall (2450) may be interposed between the second scrubbing plate (2400) and the separating wall (2200). The second scrubbing wall (2450) may extend in a second direction (D2). In some embodiments, a portion of the second scrubbing wall (2450) may protrude from the upper surface of the second scrubbing plate (2400) in the second direction (D2). Another portion of the second scrubbing wall (2450) may protrude from the lower surface of the second scrubbing plate (2400) in the second direction (D2).

[0101] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the second scrubbing plate (2400) among the second scrubbing walls (2450) may be smaller than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the second scrubbing plate (2400), but the technical idea of ​​the present invention is not limited thereto.

[0102] In some embodiments, the first scrubbing plate (2300) and the second scrubbing plate (2400) do not completely overlap in the second direction (D2). The first scrubbing plate (2300) and the second scrubbing plate (2400) may be arranged in a zigzag manner. Accordingly, the second scrubbing solution (2270) that flows downward over the second scrubbing wall (2450) may be discharged onto the upper surface of the first scrubbing plate (2300). In other words, the center of the first scrubbing plate (2300) and the center of the second scrubbing plate (2400) may be offset from each other.

[0103] The third scrubbing plate (2500) may be placed on the second scrubbing plate (2400). Specifically, the third scrubbing plate (2500) may be placed on the upper surface of the second scrubbing plate (2400). One end of the third scrubbing plate (2500) may be connected to and fixed to the separating wall (2200).

[0104] Specifically, one end of the third scrubbing plate (2500) may be connected to and fixed to a side wall of the partition wall (2200) facing the second sub-space (2150b). The third scrubbing plate (2500) may be connected to the partition wall (2200) and may extend in a first direction (D1) intersecting the partition wall (2200). More specifically, the third scrubbing plate (2500) may be placed on a plane along which the first direction (D1) and the third direction (D3) extend. Similarly, the third scrubbing plate (2500) may be connected to and fixed to the third inner side wall of the scrubbing chamber (2100) and the fourth inner side wall of the scrubbing chamber (2100).

[0105] However, the other end of the third scrubbing plate (2500) may not be connected to and fixed to the second inner wall (2100SW2) of the scrubbing chamber (2100). The other end of the third scrubbing plate (2500) may be spaced apart from the second inner wall (2100SW2) of the scrubbing chamber (2100) in the first direction (D1). The space from the other end of the third scrubbing plate (2500) to the second inner wall (2100SW2) of the scrubbing chamber (2100) may be a space in which the second scrubbing solution (2270) to be described later flows downward (for example, in the second direction (D2)).

[0106] The energy loss member (200) according to some embodiments may further include a third scrubbing hole (2500H) and a third scrubbing wall (2550).

[0107] The third scrubbing hole (2500H) may be formed within the third scrubbing plate (2500). The third scrubbing hole (2500H) may extend from the lower surface of the third scrubbing plate (2500) to the upper surface of the third scrubbing plate (2500). The third scrubbing hole (2500H) may penetrate the third scrubbing plate (2500) in the second direction (D2). Gas may rise in the second direction (D2) by passing through the third scrubbing hole (2500H).

[0108] The upper surface of the third scrubbing plate (2500) can face the demister (2600) to be described later, and the lower surface of the third scrubbing plate (2500) can face the upper surface of the second scrubbing plate (2400).

[0109] The third scrubbing wall (2550) may be attached to the other end of the third scrubbing plate (2500). The third scrubbing wall (2550) may be interposed between the third scrubbing plate (2500) and the second inner wall (2100SW2) of the scrubbing chamber (2100). The third scrubbing wall (2550) may extend in the second direction (D2).

[0110] In some embodiments, a portion of the third scrubbing wall (2550) may protrude in a second direction (D2) from the upper surface of the third scrubbing plate (2500). Another portion of the third scrubbing wall (2550) may protrude in the second direction (D2) from the lower surface of the third scrubbing plate (2500).

[0111] The length in the second direction (D2) of the portion protruding in the second direction (D2) from the upper surface of the third scrubbing plate (2500) among the third scrubbing walls (2550) may be shorter than the length in the second direction (D2) of the portion protruding in the second direction (D2) from the lower surface of the third scrubbing plate (2500), but the technical idea of ​​the present invention is not limited thereto.

[0112] In some embodiments, the third scrubbing plate (2500) and the second scrubbing plate (2400) do not completely overlap in the second direction (D2). The third scrubbing plate (2500) and the second scrubbing plate (2400) may be arranged in a zigzag manner. The second scrubbing solution (2270) that flows downward beyond the third scrubbing wall (2550) may be discharged onto the upper surface of the second scrubbing plate (2400). In other words, the center of the third scrubbing plate (2500) and the center of the second scrubbing plate (2400) may be offset from each other.

[0113] However, the third scrubbing plate (2500) and the first scrubbing plate (2300) can completely overlap in the second direction (D2). That is, the center of the third scrubbing plate (2500) and the center of the first scrubbing plate (2300) can overlap in the second direction (D2).

[0114] In some embodiments, the first to third scrubbing holes (2300H, 2400H, 2500H) may completely overlap in the second direction (D2). However, the technical idea of ​​the present invention is not limited thereto. It is to be understood that the first to third scrubbing holes (2300H, 2400H, 2500H) may not completely overlap in the second direction (D2), and may only partially overlap.

[0115] In some embodiments, the second scrubbing solution (2270) may be water, although the technical idea of ​​the present invention is not limited thereto.

[0116] The second scrubbing solution (2270) may be discharged onto the upper surface of the third scrubbing plate (2500) and then flow from the upper surface of the third scrubbing plate (2500) toward the third scrubbing wall (2505) while the second scrubbing process is being performed. At this time, the second scrubbing solution (2270) does not flow downward through the third scrubbing hole (2500H). The second scrubbing solution (2270) may flow beyond the third scrubbing wall (2550) to the lower portion of the scrubbing chamber (2100).

[0117] The second scrubbing solution (2270) that has passed the third scrubbing wall (2550) is again discharged to the upper surface of the second scrubbing plate (2400). The second scrubbing solution (2270) can flow from the upper surface of the second scrubbing plate (2400) toward the second scrubbing wall (2450) while the second scrubbing process is performed.

[0118] The second scrubbing solution (2270) disposed on the upper surface of the second scrubbing plate (2400) does not flow downward through the second scrubbing hole (240H). The second scrubbing solution (2270) can flow beyond the second scrubbing wall (2450) to the lower portion of the scrubbing chamber (2100).

[0119] Likewise, the second scrubbing solution (2270) that has passed the second scrubbing wall (2450) is discharged again to the upper surface of the first scrubbing plate (2300). The second scrubbing solution (2270) can flow from the upper surface of the first scrubbing plate (2300) toward the first scrubbing wall (2350) while the second scrubbing process is performed.

[0120] At this time, the second scrubbing solution (2270) does not flow downward through the first scrubbing hole (2300H). The second scrubbing solution (2270) may flow beyond the first scrubbing wall (2350) to the lower portion of the scrubbing chamber (2100).

[0121] Finally, the second scrubbing solution (2270) that has passed the first scrubbing month (2350) may be stored in a scrubbing solution storage tank (2700) provided at the bottom of the scrubbing chamber (2100). The scrubbing solution storage tank (2700) may store a scrubbing solution (2750) in which impurities are dissolved. For example, the scrubbing solution (2750) in which impurities are dissolved may be a solution in which a hydrophilic gas is dissolved in the second scrubbing solution (2270).

[0122] In some embodiments, the hydrophilic gas may be isopropyl alcohol (IPA) and / or ammonia, but the technical idea of ​​the present invention is not limited thereto.

[0123] A demister (2600) may be placed above the scrubbing chamber (2100). The demister (2600) may be used to remove moisture from the gas after the first scrubbing process and the second scrubbing process are performed. After the first scrubbing process and the second scrubbing process are performed, a gas from which impurities have been removed may be provided. That is, moisture may be removed from the gas from which impurities have been removed after the first scrubbing process and the second scrubbing process are performed using the demister (2600). The gas filtered by passing through the demister (2600) may be discharged to the outside of the energy loss member (200).

[0124] When utilizing an energy loss member (200) according to certain embodiments, gases harmful to the human body (e.g., impurities) can be dissolved in the scrubbing solution. Accordingly, gases harmful to the human body can be removed from byproducts generated after various semiconductor processes and discharged to the outside of the energy loss member (200).

[0125] In some embodiments, the first sub-space (2150a) may be defined by the first inner wall (2100SW1) of the scrubbing chamber (2100) and the separating wall (2200). For example, the first sub-space (2150a) may be defined by the first inner wall (2100SW1) of the scrubbing chamber (2100), the third inner wall of the scrubbing chamber (2100), the fourth inner wall of the scrubbing chamber (2100), and the separating wall (2200).

[0126] The first scrubbing process can be performed in the first sub-space (2150a).

[0127] Specifically, the first scrubbing solution (2250) can be provided into the interior of the scrubbing chamber (2100) through the spray nozzle (2210). The first scrubbing solution (2250) can be provided into the first sub-space (2150a) through the spray nozzle (2210).

[0128] A first scrubbing solution (2250) is provided from the upper portion toward the lower portion of the first sub-space (2150a), and while the gas flows from the upper portion toward the lower portion of the first sub-space (2150a), at least a portion of the impurities contained in the gas may be dissolved in the first scrubbing solution (2250). In some embodiments, the first scrubbing solution (2250) may include water. However, the technical idea of ​​the present invention is not limited thereto.

[0129] In some embodiments, the spray nozzle (2210) may be a spray nozzle. The spray nozzle (2210) may supply a first scrubbing solution (2250) having small particles to the first sub-space (2150a). Accordingly, the contact area between the first scrubbing solution (2250) and the gas may be increased. Accordingly, a scrubber with improved scrubbing efficiency may be provided.

[0130] The spray nozzle (2210) may be installed at the top of the scrubbing chamber (2100). Although not shown, the spray nozzle (2210) may be connected to a pipe installed outside the scrubbing chamber (2100).

[0131] In some embodiments, an inlet pipe (130) may be installed on one side of the first sub-space (2150a). Gas introduced into the interior of the energy loss member (200) may be introduced into the interior of the scrubbing chamber (2100) through the inlet pipe (130). Since the inlet pipe (130) is connected to the discharge pipe (120), and the discharge pipe (120) is connected to the process chamber (110), the gas introduced into the energy loss member (200) may be provided from the process chamber (110).

[0132] When utilizing an energy loss member (200) according to some embodiments, the contact area of ​​a gas in contact with a scrubbing solution can be improved. Specifically, the contact area between the scrubbing solution and the gas can be improved by forming bubbles within the scrubbing solution.

[0133] Additionally, the energy of the gas passing through the energy loss member (200) may be lost. Since the energy of the gas is lost, the energy of the gas passing through the sub-pipe (150) and the main pipe (170) can be more easily controlled.

[0134] For example, in FIG. 3, the gas can pass through the first scrubbing hole (2300H) and rise in the second direction (D2) (see drawing symbol 2300u).

[0135] After the gas passes upwardly through the first scrubbing hole (2300H), a bubble (BBL) may be formed on the upper surface of the first scrubbing plate (2300). The bubble (BBL) may be formed inside the second scrubbing solution (2270). The bubble (BBL) may be an air bubble generated due to the pressure of the gas trying to rise in the second direction (D2) inside the second scrubbing solution (2270). When the gas passes upwardly through the first scrubbing hole (2300H), the energy of the gas may be reduced. The pressure energy of the gas may be reduced, or the kinetic energy of the gas may be reduced.

[0136] At the point where the bubble (BBL) and the second scrubbing solution (2270) come into contact, impurities contained in the gas can be dissolved in the second scrubbing solution (2270).

[0137] Next, the gas can rise in the second direction (D2) by passing through the first scrubbing hole (2300H) and then passing through the second scrubbing hole (2400H).

[0138] After the gas passes upwardly through the second scrubbing hole (2400H), another bubble may be formed on the upper surface of the second scrubbing plate (2400). The another bubble may be formed inside the second scrubbing solution (2270). The another bubble may be a bubble generated due to the pressure of the gas trying to rise in the second direction (D2) inside the second scrubbing solution (2270). When the gas passes upwardly through the second scrubbing hole (2400H), the energy of the gas may be reduced. The pressure energy of the gas may be reduced, or the kinetic energy of the gas may be reduced.

[0139] At the part where the above-mentioned other bubbles and the second scrubbing solution (2270) come into contact, impurities contained in the gas can be dissolved in the second scrubbing solution (2270).

[0140] Similarly, after the gas passes upwardly through the second scrubbing hole (2400H), it may pass upwardly through the third scrubbing hole (2500H) and rise in the second direction (D2). After the gas passes upwardly through the third scrubbing hole (2500H), another bubble may be formed on the upper surface of the third scrubbing plate (2500).

[0141] After the gas passes upwardly through the third scrubbing hole (2500H), another bubble may be formed on the upper surface of the third scrubbing plate (2500). The another bubble may be formed inside the second scrubbing solution (2270). The another bubble may be a bubble generated due to the pressure of the gas trying to rise in the second direction (D2) inside the second scrubbing solution (2270). When the gas passes upwardly through the third scrubbing hole (2500H), the energy of the gas may be reduced. The pressure energy of the gas may be reduced, or the kinetic energy of the gas may be reduced.

[0142] At the point where the above-mentioned other bubble and the second scrubbing solution (2270) come into contact, impurities contained in the gas can be dissolved in the second scrubbing solution (2270).

[0143] When the bubbles are formed within the second scrubbing solution (2270), the contact area between the gas and the scrubbing solution can be improved. Accordingly, a scrubber with improved scrubbing efficiency can be provided. In addition, the energy of the gas is reduced each time the gas passes through the scrubbing holes (2300H, 2400H, 2500H), and when the energy of the gas is reduced, the energy of the gas passing through the sub-pipe (150) and the main pipe (170) can be more easily controlled.

[0144] Referring to FIG. 4, the first energy control member (140) may be placed inside the inlet pipe (130). The second energy control member (160) may be placed inside the sub-pipe (150). The first energy control member (140) may control the energy of the gas inside the inlet pipe (130) to a constant value.

[0145] For example, the gas may have a first energy within the inlet pipe (130). The first energy may include a first pressure energy and a first kinetic energy. The first pressure energy may be proportional to a first pressure of the gas. The first pressure energy may be proportional to a first static pressure of the gas. The first kinetic energy may be proportional to a first velocity of the gas. The first kinetic energy may be proportional to a first dynamic pressure of the gas.

[0146] That is, the gas may have a first pressure and a first speed within the inlet pipe (130), and the first energy of the gas may be defined by the first pressure and the first speed.

[0147] Additionally, the gas may have a second energy within the sub-pipe (150). The second energy may include a second pressure energy and a second kinetic energy. The second pressure energy may be proportional to a second pressure of the gas. The second pressure energy may be proportional to a second static pressure of the gas. The second kinetic energy may be proportional to a second velocity of the gas. The second kinetic energy may be proportional to a second dynamic pressure of the gas.

[0148] That is, the gas may have a second pressure and a second speed within the inlet pipe (130), and the second energy of the gas may be defined by the second pressure and the second speed.

[0149] The first energy control member (140) can control the first energy within the inlet pipe (130) to a constant value. For example, the first energy control member (140) can control the first pressure energy of the gas to a constant value. The constant value may be 400 Pa or more and 800 Pa or less. Preferably, the constant value may be 600 Pa or more and 700 Pa or less. However, the technical idea of ​​the present invention is not limited thereto. In this case, the first speed of the gas passing through the inlet pipe (130) can be maintained constant.

[0150] The second energy control member (160) can control the second energy to a constant value within the sub-pipe (150).

[0151] Referring to FIG. 5, the first energy control member (140) may include a first housing (140a) and a first rotation module (140b).

[0152] The first housing (140a) can be connected to and fixed to the inner wall of the inlet pipe (130). Unlike the drawing, the first energy control member (140) may not include a housing. The first rotation module (140b) can be rotatable. The first rotation module (140b) can rotate clockwise or counterclockwise (see drawing symbol 140R). The first energy can be controlled to a constant value by adjusting the rotation speed of the first rotation module (140b).

[0153] The second energy control member (160) may include a second housing and a second rotation module. The second housing may be connected to and fixed to the inner wall of the sub-pipe (150). The second rotation module may be rotatable. The second rotation module may rotate clockwise or counterclockwise. The second energy may be controlled to a constant value by adjusting the rotation speed of the second rotation module. The second energy control member (160) may be substantially the same as the first energy control member (140).

[0154] In some embodiments, the first kinetic energy may be less than the second kinetic energy. In other words, the first velocity of the gas passing through the inlet pipe (130) may be less than the second velocity of the gas passing through the sub-pipe (150). In other words, the first dynamic pressure of the gas passing through the inlet pipe (130) may be less than the second dynamic pressure of the gas passing through the sub-pipe (150). This may be because the first width (W1) of the inlet pipe (130) is greater than the second width (W2) of the sub-pipe (150).

[0155] A gas control system for a semiconductor facility according to some embodiments may further include a first pressure measuring device (191), a first velocity measuring device (193), a second pressure measuring device (195), and a second velocity measuring device (197).

[0156] The first pressure measuring device (191) can measure the first pressure of the gas passing through the inlet pipe (130). The first pressure measuring device (191) can measure the first static pressure of the gas passing through the inlet pipe (130). The first pressure measuring device (191) can be arranged at the rear end of the first energy regulating member (140). The rear end of the first energy regulating member (140) can be between the first energy regulating member (140) and the energy loss member (200). The front end of the first energy regulating member (140) can be between the first energy regulating member (140) and the discharge pipe (120).

[0157] In some embodiments, the rear end of the first energy regulation member (140) may be at a negative pressure, and the front end of the first energy regulation member (140) may be at a positive pressure. However, the absolute value of the pressure measured at the rear end of the first energy regulation member (140) and the absolute value of the pressure measured at the front end of the first energy regulation member (140) may be substantially equal to each other.

[0158] In some embodiments, when the magnitude of the absolute value of the first pressure measured by the first pressure measuring device (191) is greater than the first pressure setting value, the rotation speed of the first rotation module (140b) of the first energy regulating member (140) may be reduced. When the magnitude of the absolute value of the first static pressure measured by the first pressure measuring device (191) is greater than the first pressure setting value, the rotation speed of the first rotation module (140b) of the first energy regulating member (140) may be reduced.

[0159] That is, when the absolute value of the first pressure measured by the first pressure measuring device (191) is greater than the first pressure setting value, the RPM (rotations per minute) of the first rotation module (140b) can be reduced. The first pressure setting value may be 500 Pa or more and 800 Pa or less, but the technical idea of ​​the present invention is not limited thereto.

[0160] This may be because the magnitude of the absolute value of the first pressure of the gas passing through the inlet pipe (130) or the magnitude of the absolute value of the first static pressure decreases when the rotation speed of the first rotation module (140b) decreases.

[0161] In some embodiments, the greater the magnitude of the absolute value of the first pressure is than the first pressure setting value, the more rapidly the RPM of the first rotation module (140b) may decrease. This may be to adjust the magnitude of the absolute value of the first pressure to be equal to the first pressure setting value more quickly as the difference between the magnitude of the absolute value of the first pressure and the first pressure setting value is greater. Accordingly, the stability of the process chamber (110) connected to the inlet pipe (130) may be improved.

[0162] Conversely, when the magnitude of the absolute value of the first pressure measured by the first pressure measuring device (191) is smaller than the first pressure setting value, the rotation speed of the first rotation module (140b) can be increased. That is, when the magnitude of the absolute value of the first pressure measured by the first pressure measuring device (191) is smaller than the first pressure setting value, the RPM (rotations per minute) of the first rotation module (140b) can be increased.

[0163] This may be because the absolute value of the first pressure of the gas passing through the inlet pipe (130) increases as the rotation speed of the first rotation module (140b) increases.

[0164] In some embodiments, the first velocity measuring device (193) can measure a first velocity of the gas passing through the inlet pipe (130). The first velocity measuring device (193) can measure a first dynamic pressure of the gas passing through the inlet pipe (130).

[0165] In some embodiments, when the magnitude of the absolute value of the first speed measured by the first speed measuring device (193) is greater than the second speed setting value, the rotation speed of the first rotation module (140b) of the first energy regulating member (140) can be reduced. When the magnitude of the absolute value of the first dynamic pressure measured by the first speed measuring device (193) is greater than the first speed setting value, the rotation speed of the first rotation module (140b) of the first energy regulating member (140) can be reduced.

[0166] As another example, when the magnitude of the absolute value of the first speed measured by the first speed measuring device (193) is smaller than the second speed setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be increased. When the magnitude of the absolute value of the first dynamic pressure measured by the first speed measuring device (193) is smaller than the first speed setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be increased.

[0167] In some embodiments, the first energy of the gas passing through the inlet pipe (130) can be calculated using the first pressure measuring device (191) and the first velocity measuring device (193). When the magnitude of the first energy is greater than the first energy setting value, the rotation speed of the first rotation module (140b) of the first energy adjusting member (140) can be reduced. Conversely, when the magnitude of the first energy is less than the first energy setting value, the rotation speed of the first rotation module (140b) of the first energy adjusting member (140) can be increased.

[0168] The above first energy setting value may be the energy possessed by the gas when the pressure of the gas is the first pressure setting value and the speed of the gas is the first speed setting value.

[0169] The second pressure measuring device (195) can measure the second pressure of the gas passing through the sub-pipe (150). The second pressure measuring device (195) can measure the second static pressure of the gas passing through the sub-pipe (150). The second pressure measuring device (195) can be placed at the front end of the second energy regulating member (160). The front end of the second energy regulating member (160) can be between the second energy regulating member (160) and the energy loss member (200). The front end of the second energy regulating member (160) can be between the second energy regulating member (160) and the main pipe (170).

[0170] In some embodiments, the rear end of the second energy regulation member (160) may be at a negative pressure, and the front end of the second energy regulation member (160) may be at a positive pressure. However, the absolute value of the pressure measured at the rear end of the second energy regulation member (160) and the absolute value of the pressure measured at the front end of the second energy regulation member (160) may be substantially equal to each other.

[0171] In some embodiments, the rotation speed of the second rotation module of the second energy regulation member (160) may be reduced when the magnitude of the absolute value of the second pressure measured by the second pressure measurement unit (195) is greater than the second pressure setting value. The rotation speed of the second rotation module of the second energy regulation member (160) may be reduced when the magnitude of the absolute value of the second static pressure measured by the second pressure measurement unit (195) is greater than the second pressure setting value.

[0172] That is, when the magnitude of the absolute value of the second pressure measured by the second pressure measuring device (195) is greater than the second pressure setting value, the RPM (rotations per minute) of the second rotation module can be reduced. The second pressure setting value may be 500 Pa or more and 800 Pa or less, but the technical idea of ​​the present invention is not limited thereto.

[0173] This may be because the magnitude of the absolute value of the second pressure of the gas passing through the sub-pipe (150) decreases when the rotation speed of the second rotation module is reduced.

[0174] In some embodiments, the greater the magnitude of the absolute value of the second pressure is than the second pressure setting value, the more rapidly the RPM of the first rotation module may decrease. This may be to adjust the magnitude of the absolute value of the second pressure to be equal to the second pressure setting value more quickly as the difference between the magnitude of the absolute value of the second pressure and the second pressure setting value is greater. Accordingly, the stability of the sub-pipe (150) and the main pipe (170) may be improved.

[0175] Conversely, if the magnitude of the absolute value of the second pressure measured by the second pressure measuring device (195) is smaller than the second pressure setting value, the rotation speed of the second rotation module can be increased. That is, if the magnitude of the absolute value of the second pressure measured by the second pressure measuring device (195) is smaller than the second pressure setting value, the RPM (rotations per minute) of the second rotation module can be increased.

[0176] This may be because the absolute value of the second pressure of the gas passing through the sub-pipe (150) increases as the rotation speed of the second rotation module increases.

[0177] In some embodiments, the second velocity meter (197) can measure a second velocity of the gas passing through the sub-pipe (150). The second velocity meter (197) can measure a second dynamic pressure of the gas passing through the sub-pipe (150).

[0178] In some embodiments, the rotation speed of the second rotation module of the second energy control member (160) may be reduced when the magnitude of the absolute value of the second speed measured by the second speed measuring device (197) is greater than the second speed setting value. The rotation speed of the first rotation module of the second energy control member (160) may be reduced when the magnitude of the absolute value of the second dynamic pressure measured by the second speed measuring device (197) is greater than the second speed setting value.

[0179] As another example, when the magnitude of the absolute value of the second speed measured by the second speed measuring device (197) is smaller than the second speed setting value, the rotation speed of the second rotation module of the second energy control member (160) can be increased. When the magnitude of the absolute value of the second dynamic pressure measured by the second speed measuring device (197) is smaller than the second speed setting value, the rotation speed of the second rotation module of the second energy control member (160) can be increased.

[0180] In some embodiments, the second energy of the gas passing through the sub-pipe (150) can be calculated using the second pressure measuring device (195) and the second velocity measuring device (197). When the magnitude of the second energy is greater than the second energy setting value, the rotation speed of the first rotation module of the second energy adjusting member (160) can be reduced. Conversely, when the magnitude of the second energy is less than the second energy setting value, the rotation speed of the second rotation module of the second energy adjusting member (160) can be increased.

[0181] The second energy setting value may be the energy possessed by the gas when the pressure of the gas is the second pressure setting value and the speed of the gas is the second speed setting value.

[0182] In some embodiments, the first pressure and the first speed of the gas passing through the inlet pipe (130) may remain constant even if the rotational speed of the second rotating module changes. In other words, the first static pressure and the first dynamic pressure of the gas passing through the inlet pipe (130) may remain constant.

[0183] In addition, even if the rotational speed of the first rotation module (140b) changes, the second pressure and the second speed of the gas passing through the sub-pipe (150) may be constant. In other words, the second static pressure and the second dynamic pressure of the gas passing through the sub-pipe (150) may be constant.

[0184] In some embodiments, the sub-pipe (150) may have a fourth width (W4) at the portion where the sub-pipe (150) and the main pipe (170) are connected.

[0185] In some embodiments, the ratio of the cross-sectional area of ​​the discharge pipe (120) to the cross-sectional area of ​​the sub-pipe (150) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). That is, the cross-sectional area reduction rate of the sub-pipe (150) compared to the discharge pipe (120) may be 50% to 90%. The cross-sectional area of ​​the sub-pipe (150) may be proportional to the fourth width (W4), and the cross-sectional area of ​​the discharge pipe (120) may be proportional to the third width (W4).

[0186] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the exhaust pipe (120). The cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120) can be 80% to 90%. The greater the cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120), the more space efficiency of the semiconductor production line can be improved.

[0187] More preferably, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 85% to 90% compared to the cross-sectional area of ​​the exhaust pipe (120). The cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120) may be 85% to 90%. The greater the cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120), the more space efficiency of the semiconductor production line can be improved.

[0188] If the cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120) is less than 50%, the space efficiency of the semiconductor production line may be reduced. On the other hand, if the cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120) is greater than 90%, the amount of energy that the second energy control member (160) must output may increase. Accordingly, the rotation speed of the second rotation module of the second energy control member (160) may become faster. Therefore, the stability of the gas control system for semiconductor equipment may be reduced.

[0189] Additionally, if the cross-sectional area reduction ratio of the sub-pipe (150) compared to the exhaust pipe (120) is greater than 90%, the flow rate of the gas passing through the sub-pipe (150) may increase. Accordingly, the load applied to the sub-pipe (150) may increase. Accordingly, the stability of the gas control system for semiconductor equipment may be reduced.

[0190] That is, by using a gas control system for semiconductor equipment according to some embodiments of the present invention, a semiconductor production line with improved space efficiency and enhanced stability can be provided.

[0191] Although FIG. 1 illustrates that there is one exhaust pipe (120) and one process chamber (110), the technical concept of the present invention is not limited thereto. A gas control system for semiconductor equipment may include a plurality of exhaust pipes (120) and a plurality of process chambers (110).

[0192] At this time, the sub-pipe (150) and the energy loss member (200) may each include one. In this case, the ratio of the sum of the cross-sectional areas of each of the plurality of discharge pipes (120) to the cross-sectional area of ​​the sub-pipe (150) at the portion where the sub-pipe (150) and the main pipe (170) are connected may increase, and in this case, the energy applied to the main pipe (170) may be reduced. Accordingly, the number of process chambers (110) connected to one main pipe (170) may increase, and the space efficiency of a semiconductor production line utilizing a gas control system for semiconductor equipment may also be improved.

[0193] A gas control system for semiconductor equipment according to some embodiments may include a second energy control member (160) and may not include a first energy control member (140). In this case, the energy of the gas may be controlled only within the sub-pipe (150). However, the technical idea of ​​the present invention is not limited thereto.

[0194]

[0195] Hereinafter, a gas control system for semiconductor equipment according to several other embodiments of the present invention will be described with reference to FIGS. 6 to 13. For convenience of explanation, any content overlapping with that described using FIGS. 1 to 5 will be briefly described or omitted.

[0196] FIGS. 6 to 13 are exemplary drawings for explaining a gas control system for semiconductor equipment according to several other embodiments of the present invention. For reference, FIG. 6 may be an exemplary enlarged view of the P region and Q region of FIG. 1. FIG. 7 may be a drawing for explaining an energy loss member according to several other embodiments.

[0197] First, referring to FIG. 6, the sub-pipe (150) may include a first portion (150a), a second portion (150b), and a third portion (150c).

[0198] The first part (150a) may be closest to the energy loss member (200). One end of the first part (150a) may be directly connected to the energy loss member (200). The other end of the first part (150a) may be connected to the second part (150b). The second part (150b) may be interposed between the first part (150a) and the third part (150c). The third part (150c) may be closest to the main pipe (170). One end of the third part (150c) may be directly connected to the main pipe (170).

[0199] In some embodiments, the sub-pipe (150) may include a portion whose width gradually decreases as it moves away from the energy loss member (200) and toward the main pipe (170). For example, the width of the second portion (150b) may decrease as it moves away from the energy loss member (200). The width of the second portion (150b) may decrease as it moves closer to the main pipe (170).

[0200] The width of the first portion (150a) may be the same as the first width (W1) of the inlet pipe (130). That is, the speed of the gas passing through the first portion (150a) may be the same as the speed of the gas passing through the inlet pipe (130). The speed of the gas may gradually increase as it moves from the first portion (150a) toward the third portion (150c).

[0201] The second energy control member (160) can control the energy of the gas, which changes as it passes through the first part (150a) and the second part (150b), to a constant value.

[0202] Referring to FIG. 7, the energy loss member (200) according to some embodiments may not include a scrubber. The energy loss member (200) may include an energy loss chamber (3100), at least one tray (3200), and a plurality of tray holes (3300).

[0203] First, a chamber (3100) may be provided. The energy loss chamber (3100) may be a housing of an energy loss member (200). An inlet pipe (130) may be connected to one side of the energy loss chamber (3100). A sub-pipe (150) may be connected to the other side of the energy loss chamber (3100). That is, a gas provided from a process chamber (110) may be provided to the energy loss chamber (3100) through the inlet pipe (130). The gas may pass through the energy loss chamber (3100) and be discharged to the outside through the sub-pipe (150). The gas may move in one direction within the energy loss chamber (3100) (see drawing number 3400).

[0204] In some embodiments, the first width (W1) of the inlet pipe (130) may be greater than the second width (W2) of the sub-pipe (150). However, the technical idea of ​​the present invention is not limited thereto.

[0205] At least one tray (3200) may be provided within the energy loss chamber (3100). In FIG. 7, three trays (3200) are illustrated, but the technical idea of ​​the present invention is not limited thereto. The number of trays (3200) may be two or fewer, or four or more. The trays (3200) may extend in a direction intersecting the direction of movement of the gas (3400). That is, each tray (3200) may extend in a direction perpendicular to the direction of movement of the gas (3400). Each tray (3200) may be spaced apart from each other in the direction of movement of the gas (3400).

[0206] A plurality of tray holes (3300) may penetrate the tray (3200). The plurality of tray holes (3300) may be passages through which the gas moves. The gas may pass through the plurality of tray holes (3300) and be discharged to the outside of the energy loss chamber (3100) (see drawing number 3400).

[0207] In some embodiments, the energy of the gas may be lost each time the gas passes through the plurality of tray holes (3300). Thereafter, the second energy control member (160) may control the second energy of the gas to a constant value within the sub-pipe (150). Since the energy of the gas is lost as it passes through the plurality of tray holes (3300), it may be easy for the second energy control member (160) to control the second energy to a constant value.

[0208] Referring to FIG. 8, a gas control system for a semiconductor facility according to some embodiments may include a plurality of process chambers (110) and a plurality of exhaust pipes (120).

[0209] For example, the process chamber (110) may include a first process chamber (111) and a second process chamber (112), and the discharge pipe (120) may include a first discharge pipe (121) and a second discharge pipe (122).

[0210] A first semiconductor process can be performed in a first process chamber (111), and a second semiconductor process can be performed in a second process chamber (112). The first semiconductor process and the second semiconductor process may be the same or different from each other.

[0211] One end of the first discharge pipe (121) may be connected to the first process chamber (111), and the other end of the first discharge pipe (121) may be connected to the inlet pipe (130). One end of the second discharge pipe (122) may be connected to the second process chamber (112), and the other end of the second discharge pipe (122) may be connected to the inlet pipe (130). That is, a plurality of discharge pipes (120) may be connected to one inlet pipe (130).

[0212] As the number of discharge pipes (120) connected to the inlet pipe (130) increases, the first energy of the gas passing through the inlet pipe (130) may increase. For example, the first static pressure of the gas may increase because the amount of the gas passing through the inlet pipe (130) increases. The first dynamic pressure of the gas may increase when the speed passing through the inlet pipe (130) increases.

[0213] In this case, the first energy control member (140) can control the first energy to be constant. When the first energy exceeds the first energy setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be reduced. When the first pressure of the gas passing through the inlet pipe (130) exceeds the first pressure setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be reduced.

[0214] In some embodiments, the first discharge pipe (121) may have a third_1 width (W31) and the second discharge pipe (122) may have a third_2 width (W32). The sum of the third_1 width (W31) and the third_2 width (W32) may be the third width (W3) of the discharge pipe (120).

[0215] In some embodiments, a ratio of the sum of the cross-sectional areas of the first discharge pipe (121) and the second discharge pipe (122) to the cross-sectional area of ​​the sub-pipe (150) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). The cross-sectional area of ​​the sub-pipe (150) may be proportional to the fourth width (W4). The cross-sectional area of ​​the first discharge pipe (121) may be proportional to the third_1 width (W31). The cross-sectional area of ​​the second discharge pipe (122) may be proportional to the third_2 width (W32). The cross-sectional areas of the discharge pipes (120) may be proportional to the third width (W3).

[0216] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). More preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 85% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0217] Referring to FIG. 9, the discharge pipe (120) may include a first sub-discharge pipe (120a), a second sub-discharge pipe (120b), and a third sub-discharge pipe (120c). The first sub-discharge pipe (120a), the second sub-discharge pipe (120b), and the third sub-discharge pipe (120c) may all be connected to one process chamber (110). The first sub-discharge pipe (120a), the second sub-discharge pipe (120b), and the third sub-discharge pipe (120c) may all be connected to an inlet pipe (130).

[0218] Acidic gas, neutral gas, and basic gas can be discharged from the process chamber (110). The acidic gas can be discharged through the first sub-discharge pipe (120a). The neutral gas can be discharged through the second sub-discharge pipe (120b). The basic gas can be discharged through the third sub-discharge pipe (120c).

[0219] In some embodiments, the first sub-exhaust pipe (120a), the second sub-exhaust pipe (120b), and the third sub-exhaust pipe (120c) may not operate simultaneously. For example, when the gas flows within the first sub-exhaust pipe (120a), the gas may not flow within the second sub-exhaust pipe (120b) and the third sub-exhaust pipe (120c). However, the technical idea of ​​the present invention is not limited thereto.

[0220] The first sub-discharge pipe (120a), the second sub-discharge pipe (120b), and the third sub-discharge pipe (120c) can operate simultaneously, and the gas can be provided to the inlet pipe (130) through the first sub-discharge pipe (120a), the second sub-discharge pipe (120b), and the third sub-discharge pipe (120c). At this time, when the number of sub-discharge pipes (120a, 120b, 120c) connected to the inlet pipe (130) increases, the first energy of the gas passing through the inlet pipe (130) can increase. For example, since the amount of the gas passing through the inlet pipe (130) increases, the first static pressure of the gas can increase. When the speed passing through the inlet pipe (130) increases, the first dynamic pressure of the gas can increase.

[0221] In this case, the first energy control member (140) can control the first energy to be constant. When the first energy exceeds the first energy setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be reduced. When the first pressure of the gas passing through the inlet pipe (130) exceeds the first pressure setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be reduced.

[0222] Referring to FIG. 10, a gas control system for a semiconductor facility according to some embodiments may include a plurality of process chambers (110), a plurality of exhaust pipes (120), and a plurality of inlet pipes (130). In addition, the gas control system for a semiconductor facility according to some embodiments may further include a third energy control member (145).

[0223] For example, the process chamber may include a first process chamber (111) and a second process chamber (112). The discharge pipe (120) may include a first discharge pipe (121) and a second discharge pipe (122). The inlet pipe (130) may include a first inlet pipe (131) and a second inlet pipe (132).

[0224] A first semiconductor process can be performed in a first process chamber (111), and a second semiconductor process can be performed in a second process chamber (112). The first semiconductor process and the second semiconductor process may be the same or different from each other.

[0225] One end of the first discharge pipe (121) may be connected to the first process chamber (111), and the other end of the first discharge pipe (121) may be connected to the first inlet pipe (131). One end of the second discharge pipe (122) may be connected to the second process chamber (112), and the other end of the second discharge pipe (122) may be connected to the second inlet pipe (132).

[0226] The first energy of the gas passing through the first inlet pipe (131) may be the same as the third energy of the gas passing through the second inlet pipe (132). That is, the gas passing through the second inlet pipe (132) may have the third energy. The third energy may include third pressure energy and third kinetic energy. The third pressure energy may be proportional to the third pressure of the gas. The third pressure energy may be proportional to the third static pressure of the gas. The third kinetic energy may be proportional to the third velocity of the gas. The third kinetic energy may be proportional to the third dynamic pressure of the gas. That is, the gas may have the third pressure and the third velocity within the second inlet pipe (132), and the third energy of the gas may be defined by the third pressure and the third velocity.

[0227] The first energy control member (140) can control the first energy within the first inlet pipe (131) to a constant value. For example, the first energy control member (140) can control the first pressure energy of the gas to a constant value. The constant value may be 400 Pa or more and 800 Pa or less. Preferably, the constant value may be 600 Pa or more and 700 Pa or less. However, the technical idea of ​​the present invention is not limited thereto.

[0228] The third energy control member (145) can control the third energy to a constant value within the second inlet pipe (132). For example, the third energy control member (145) can control the third pressure energy of the gas to a constant value.

[0229] In some embodiments, the first energy of the gas passing through the first inlet pipe (131) and the second energy of the gas passing through the second inlet pipe (132) may be equal to each other. The first energy control member (140) and the third energy control member (145) may each control the first energy and the third energy to be equal to each other.

[0230] More specifically, the first pressure energy of the gas passing through the first inlet pipe (131) and the second pressure energy of the gas passing through the second inlet pipe (132) may be equal to each other.

[0231] On the other hand, the third kinetic energy of the gas passing through the second inlet pipe (132) may be less than the second kinetic energy of the gas passing through the sub-pipe (150). In other words, the third speed of the gas passing through the second inlet pipe (132) may be less than the second speed of the gas passing through the sub-pipe (150). In other words, the third dynamic pressure of the gas passing through the second inlet pipe (132) may be less than the second dynamic pressure of the gas passing through the sub-pipe (150). This may be because the width of the second inlet pipe (132) is greater than the second width (W2) of the sub-pipe (150).

[0232] In some embodiments, the first discharge pipe (121) may have a third_1 width (W31) and the second discharge pipe (122) may have a third_2 width (W32). The sum of the third_1 width (W31) and the third_2 width (W32) may be the third width (W3) of the discharge pipe (120).

[0233] In some embodiments, the ratio of the sum of the cross-sectional area of ​​the first discharge pipe (121) and the cross-sectional area of ​​the second discharge pipe (122) to the cross-sectional area of ​​the sub-pipe (150) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0234] The cross-sectional area of ​​the sub-pipe (150) may be proportional to the fourth width (W4). The cross-sectional area of ​​the first discharge pipe (121) may be proportional to the third_1 width (W31). The cross-sectional area of ​​the second discharge pipe (122) may be proportional to the third_2 width (W32). The cross-sectional areas of the discharge pipes (120) may be proportional to the third width (W3).

[0235] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). More preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 85% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0236] Referring to FIG. 11, a gas control system for a semiconductor facility according to some embodiments may include a plurality of process chambers (110), a plurality of exhaust pipes (120), a plurality of inlet pipes (130), and a plurality of sub-pipes. In addition, the gas control system for a semiconductor facility according to some embodiments may further include a third energy control member (145) and a fourth energy control member (165).

[0237] For example, the process chamber may include a first process chamber (111) and a second process chamber (112). The discharge pipe (120) may include a first discharge pipe (121) and a second discharge pipe (122). The inlet pipe (130) may include a first inlet pipe (131) and a second inlet pipe (132). The sub-pipe (150) may include a first sub-pipe (151) and a second sub-pipe (152).

[0238] A first semiconductor process can be performed in a first process chamber (111), and a second semiconductor process can be performed in a second process chamber (112). The first semiconductor process and the second semiconductor process may be the same or different from each other.

[0239] One end of the first discharge pipe (121) may be connected to the first process chamber (111), and the other end of the first discharge pipe (121) may be connected to the first inlet pipe (131). One end of the second discharge pipe (122) may be connected to the second process chamber (112), and the other end of the second discharge pipe (122) may be connected to the second inlet pipe (132).

[0240] One end of the first sub-pipe (151) may be connected to an energy loss member (200), and the other end of the first sub-pipe (151) may be connected to a main pipe (170). One end of the second sub-pipe (152) may be connected to an energy loss member (200), and the other end of the second sub-pipe (152) may be connected to a main pipe (170).

[0241] The first energy of the gas passing through the first inlet pipe (131) may be the same as the third energy of the gas passing through the second inlet pipe (132). That is, the gas passing through the second inlet pipe (132) may have the third energy. The third energy may include third pressure energy and third kinetic energy. The third pressure energy may be proportional to the third pressure of the gas. The third pressure energy may be proportional to the third static pressure of the gas. The third kinetic energy may be proportional to the third velocity of the gas. The third kinetic energy may be proportional to the third dynamic pressure of the gas. That is, the gas may have the third pressure and the third velocity within the second inlet pipe (132), and the third energy of the gas may be defined by the third pressure and the third velocity.

[0242] The first energy control member (140) can control the first energy within the first inlet pipe (131) to a constant value. For example, the first energy control member (140) can control the first pressure energy of the gas to a constant value. The constant value may be 400 Pa or more and 800 Pa or less. Preferably, the constant value may be 600 Pa or more and 700 Pa or less. However, the technical idea of ​​the present invention is not limited thereto.

[0243] The third energy control member (145) can control the third energy within the second inlet pipe (142) to a constant value. For example, the third energy control member (145) can control the third pressure energy of the gas to a constant value. The constant value may be 400 Pa or more and 800 Pa or less. Preferably, the constant value may be 600 Pa or more and 700 Pa or less. However, the technical idea of ​​the present invention is not limited thereto.

[0244] The gas passing through the second sub-pipe (152) may have a fourth energy. The fourth energy may include a fourth pressure energy and a fourth kinetic energy. The fourth pressure energy may be proportional to a fourth pressure of the gas. The fourth pressure energy may be proportional to a fourth static pressure of the gas. The fourth kinetic energy may be proportional to a fourth velocity of the gas. The fourth kinetic energy may be proportional to a fourth dynamic pressure of the gas. That is, the gas may have a fourth pressure and a fourth velocity within the second sub-pipe (152), and the fourth energy of the gas may be defined by the fourth pressure and the fourth velocity.

[0245] The second energy control member (160) can control the second energy to a constant value within the first sub-pipe (151). The fourth energy control member (165) can control the fourth energy to a constant value within the second sub-pipe (152).

[0246] In some embodiments, the second energy of the gas passing through the first sub-pipe (151) and the fourth energy of the gas passing through the second sub-pipe (152) may be equal to each other. The second energy control member (160) and the fourth energy control member (165) may control the second energy and the fourth energy to be equal to each other, respectively.

[0247] On the other hand, the third kinetic energy of the gas passing through the second inlet pipe (132) may be less than the second kinetic energy of the gas passing through the first sub-pipe (151) and the fourth kinetic energy of the gas passing through the second sub-pipe (152). In other words, the third speed of the gas passing through the second inlet pipe (132) may be less than the second speed of the gas passing through the first sub-pipe (151), and the third speed of the gas passing through the second inlet pipe (132) may be less than the fourth speed of the gas passing through the second sub-pipe (152).

[0248] In other words, the third dynamic pressure of the gas passing through the second inlet pipe (132) may be less than the second dynamic pressure of the gas passing through the sub-pipe (150), and the third speed of the gas passing through the second inlet pipe (132) may be less than the fourth speed of the gas passing through the second sub-pipe (152). This may be because the width of the second inlet pipe (132) is greater than the width of the first sub-pipe (151) and the width of the second sub-pipe (152).

[0249] In some embodiments, the first discharge pipe (121) may have a third_1 width (W31) and the second discharge pipe (122) may have a third_2 width (W32). The sum of the third_1 width (W31) and the third_2 width (W32) may be a third width (W3) of the discharge pipe (120). The first sub-pipe (151) may have a fourth_1 width (W41) and the second sub-pipe (152) may have a fourth_2 width (W42). The sum of the fourth_1 width (W41) and the fourth_2 width (W42) may be a fourth width (W4) of the sub-pipe (150) at the portion where the sub-pipe (150) and the main pipe (170) are connected.

[0250] In some embodiments, a ratio of the sum of the cross-sectional areas of the first discharge pipe (121) and the second discharge pipe (122) to the sum of the cross-sectional areas of the first sub-pipe (151) and the second sub-pipe (152) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). The cross-sectional area of ​​the first sub-pipe (151) may be proportional to the 4_1 width (W41). The cross-sectional area of ​​the second sub-pipe (152) may be proportional to the 4_2 width (W42). The cross-sectional areas of the sub-pipes (150) may be proportional to the 4th width (W4). The cross-sectional area of ​​the first discharge pipe (121) may be proportional to the 3_1 width (W31). The cross-sectional area of ​​the second discharge pipe (122) may be proportional to the third width (W32). The cross-sectional areas of the discharge pipes (120) may be proportional to the third width (W3).

[0251] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). More preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 85% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0252] Referring to FIG. 12, a gas control system for a semiconductor facility according to some embodiments may include a plurality of process chambers (110) and a plurality of exhaust pipes (120).

[0253] For example, the process chamber (110) may include a first process chamber (111), a second process chamber (112), a third process chamber (113), and a fourth process chamber (114), and the discharge pipe (120) may include a first discharge pipe (121), a second discharge pipe (122), a third discharge pipe (123), and a fourth discharge pipe (124).

[0254] A first semiconductor process may be performed in a first process chamber (111), and a second semiconductor process may be performed in a second process chamber (112). A third semiconductor process may be performed in a third process chamber (113). A fourth semiconductor process may be performed in a fourth process chamber (114). The first to fourth semiconductor processes may be the same or different from each other.

[0255] One end of the first discharge pipe (121) may be connected to the first process chamber (111), and the other end of the first discharge pipe (121) may be connected to the inlet pipe (130). One end of the second discharge pipe (122) may be connected to the second process chamber (112), and the other end of the second discharge pipe (122) may be connected to the inlet pipe (130). One end of the third discharge pipe (123) may be connected to the third process chamber (113), and the other end of the third discharge pipe (123) may be connected to the inlet pipe (130). One end of the fourth discharge pipe (124) may be connected to the fourth process chamber (114), and the other end of the fourth discharge pipe (124) may be connected to the inlet pipe (130). That is, a plurality of discharge pipes (120) may be connected to one inlet pipe (130).

[0256] As the number of discharge pipes (120) connected to the inlet pipe (130) increases, the first energy of the gas passing through the inlet pipe (130) may increase. For example, the first static pressure of the gas may increase because the amount of the gas passing through the inlet pipe (130) increases. The first dynamic pressure of the gas may increase when the speed passing through the inlet pipe (130) increases.

[0257] In this case, the first energy control member (140) can control the first energy to a constant level. When the first energy exceeds the first energy setting value, the rotation speed of the first rotation module (140b) of the first energy control member (140) can be reduced.

[0258] In some embodiments, the first discharge pipe (121) may have a third_1 width (W31), the second discharge pipe (122) may have a third_2 width (W32), the third discharge pipe (123) may have a third_3 width (W33), and the fourth discharge pipe (124) may have a third_4 width (W34). The sum of the third_1 width (W31), the third_2 width (W32), the third_3 width (W33), and the third_4 width (W34) may be the third width (W3) of the discharge pipe (120). The ratio of the fourth width (W4) to the third width (W3) may be 1.4 or more and 3.2 or less, but the technical idea of ​​the present invention is not limited thereto.

[0259] In some embodiments, the ratio of the sum of the cross-sectional area of ​​the first discharge pipe (121), the cross-sectional area of ​​the second discharge pipe (122), the cross-sectional area of ​​the third discharge pipe (123), and the cross-sectional area of ​​the fourth discharge pipe (124) to the cross-sectional area of ​​the sub-pipe (150) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0260] The cross-sectional area of ​​the sub-pipe (150) may be proportional to the fourth width (W4). The cross-sectional area of ​​the first discharge pipe (121) may be proportional to the third_1 width (W31). The cross-sectional area of ​​the second discharge pipe (122) may be proportional to the third_2 width (W32). The cross-sectional area of ​​the third discharge pipe (123) may be proportional to the third_3 width (W33). The cross-sectional area of ​​the fourth discharge pipe (124) may be proportional to the third_4 width (W34). The cross-sectional areas of the discharge pipes (120) may be proportional to the third width (W3).

[0261] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). More preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 85% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0262] Although the gas control system for semiconductor equipment in FIG. 12 is illustrated as including one main pipe (170) and four process chambers (110), the technical idea of ​​the present invention is not limited thereto. According to some other embodiments, the gas control system for semiconductor equipment may include one main pipe (170) and 24 process chambers (110). As the number of process chambers (110) increases relative to the number of main pipes (170), a semiconductor production line with improved space efficiency can be provided.

[0263] Referring to FIG. 13, a gas control system for a semiconductor facility according to some embodiments may include first and second process chambers (111, 112), first and second exhaust pipes (121, 122), first and second inlet pipes (131, 132), first and second energy loss members (210, 220), and first and second sub-pipes (151, 152).

[0264] Additionally, the gas control system for semiconductor equipment according to some embodiments may include a third energy control member (145) and a fourth energy control member (165).

[0265] That is, the process chamber, the discharge pipe, the inlet pipe, the energy loss member, and the sub-pipe can each correspond one-to-one.

[0266] Specifically, the first process chamber (111) is connected to the first discharge pipe (121), and the first discharge pipe (121) is connected to the first inlet pipe (131). The first inlet pipe (131) is connected to the first energy loss member (210). The first sub-pipe (151) is connected to the first energy loss member (210).

[0267] The first energy control member (140) can control the energy of the gas passing through the first inlet pipe (131) to a constant value. The second energy control member (160) can control the energy of the gas passing through the first sub-pipe (151) to a constant value.

[0268] The second process chamber (112) is connected to the second discharge pipe (122), and the second discharge pipe (122) is connected to the second inlet pipe (132). The second inlet pipe (132) is connected to the second energy loss member (220). The second sub-pipe (152) is connected to the second energy loss member (220).

[0269] The third energy control member (145) can control the energy of the gas passing through the second inlet pipe (132) to a constant value. The fourth energy control member (165) can control the energy of the gas passing through the second sub-pipe (152) to a constant value.

[0270] In some embodiments, the first discharge pipe (121) may have a third_1 width (W31) and the second discharge pipe (122) may have a third_2 width (W32). The sum of the third_1 width (W31) and the third_2 width (W32) may be a third width (W3) of the discharge pipe (120). The first sub-pipe (151) may have a fourth_1 width (W41) and the second sub-pipe (152) may have a fourth_2 width (W42). The sum of the fourth_1 width (W41) and the fourth_2 width (W42) may be a fourth width (W4) of the sub-pipe (150) at the portion where the sub-pipe (150) and the main pipe (170) are connected.

[0271] The ratio of the fourth width (W4) to the third width (W3) may be 1.4 or more and 3.2 or less, but the technical idea of ​​the present invention is not limited thereto.

[0272] In some embodiments, the ratio of the sum of the cross-sectional areas of the first discharge pipe (121) and the second discharge pipe (122) to the sum of the cross-sectional areas of the first sub-pipe (151) and the second sub-pipe (152) at the point where the sub-pipe (150) and the main pipe (170) are connected may be 2 or more and 10 or less. That is, the cross-sectional area of ​​the sub-pipe (150) may be reduced by 50% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0273] The cross-sectional area of ​​the first sub-pipe (151) may be proportional to the 4_1 width (W41). The cross-sectional area of ​​the second sub-pipe (152) may be proportional to the 4_2 width (W42). The cross-sectional areas of the sub-pipes (150) may be proportional to the 4th width (W4). The cross-sectional area of ​​the first discharge pipe (121) may be proportional to the 3_1 width (W31). The cross-sectional area of ​​the second discharge pipe (122) may be proportional to the 3_2 width (W32). The cross-sectional areas of the discharge pipes (120) may be proportional to the 3rd width (W3).

[0274] Preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 80% to 90% compared to the cross-sectional area of ​​the discharge pipe (120). More preferably, the cross-sectional area of ​​the sub-pipe (150) can be reduced by 85% to 90% compared to the cross-sectional area of ​​the discharge pipe (120).

[0275]

[0276] Hereinafter, an operation method of a gas control system for semiconductor equipment according to some embodiments of the present invention will be described with reference to FIG. 14. FIG. 14 is a drawing for explaining an operation method of a gas control system for semiconductor equipment according to some embodiments of the present invention.

[0277] Referring to FIG. 14, first, a process chamber (110) may be provided. A semiconductor process may be performed in the process chamber (110). For example, the semiconductor process may include, but is not limited to, a deposition process, an etching process, and / or a cleaning process.

[0278] The gas used in the semiconductor process can be discharged to the outside of the process chamber (110) through the exhaust pipe (120). The gas can move to the energy loss member (200) through the exhaust pipe (120) and the inlet pipe (130) (see drawing number 410). The gas can have a first energy inside the inlet pipe (130). The first energy can include a first pressure energy and a first kinetic energy.

[0279] The first energy control member (140) can control the first energy to a constant value. Since the first energy is controlled to a constant value, the process chamber (110) connected to the inlet pipe (130) can operate stably. Specifically, the first energy of the gas can be controlled by controlling the first pressure of the gas and the first speed of the gas. The first energy of the gas can be controlled by controlling the rotation speed of the first rotation module (140b) of the first energy control member (140).

[0280] The gas provided as an energy loss member (200) may lose energy while passing through the energy loss member (200) (see drawing number 420). For example, the gas may pass through a first scrubbing hole (2300u in FIG. 3). The energy of the gas may be consumed as the gas passes through the first scrubbing hole (2300u in FIG. 3). In addition, when the energy loss member (200) includes a scrubber, the gas may dissolve impurities in a scrubbing solution (2270 in FIG. 3) on the upper surface of the first scrubbing plate (2300 in FIG. 3) after passing through the first scrubbing hole (2300u in FIG. 3).

[0281] The gas passing through the energy loss member (200) can be discharged to the outside of the energy loss member (200) through the sub-pipe (150). Since the energy of the gas is lost inside the energy loss member (200), the energy of the gas inside the energy loss member (200) can be less than the first energy of the gas inside the inlet pipe (130).

[0282] The gas may be provided to the main pipe (170) through the sub-pipe (150) (see drawing number 430). Since the energy of the gas is lost while passing through the energy loss member (200), additional energy may be required for the gas to move to the main pipe (170). The second energy control member (160) may additionally transfer energy to the gas. That is, the second energy control member (160) may constantly control the second energy of the gas within the sub-pipe (150). The second energy may be the minimum energy required for the gas to move to the main pipe (170).

[0283] Specifically, the second energy of the gas can be controlled by adjusting the second pressure of the gas and the second speed of the gas. The second energy of the gas can be controlled by adjusting the rotational speed of the second rotation module of the second energy control member (160).

[0284] The above gas can be provided to the utility duct (300) through the main pipe (170) (see drawing number 440), and the above gas can be discharged outside the semiconductor production line through the utility pipe (180) (see drawing number 450).

[0285] When utilizing a gas control system for semiconductor equipment according to some embodiments of the present invention, the second energy of the gas passing through the sub-pipe (150) can be controlled to a constant value. Accordingly, the load applied to the main pipe (170) can be reduced. As a result, the number of process chambers (110) connected to the main pipe (170) can be increased, and the space efficiency of the semiconductor production line can be improved.

[0286] Although embodiments of the present invention have been described with reference to the attached drawings, the present invention is not limited to the above embodiments, but can be manufactured in various different forms. Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential characteristics of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A first process chamber in which a first semiconductor process is performed; A first exhaust pipe connected to the first process chamber and through which a gas used in the first semiconductor process is exhausted; A first inlet pipe connected to the first discharge pipe; An energy loss member connected to the first inlet pipe and causing energy loss of the gas provided through the first inlet pipe; A sub-pipe through which the gas passing through the energy loss member is discharged; A main pipe connected to the above sub-pipe; A first energy control member disposed within the first inlet pipe and controlling the first energy of the gas passing through the first inlet pipe; and A second energy control member is disposed within the sub-pipe and controls the second energy of the gas through the sub-pipe, The gas is provided to the energy loss member through the first discharge pipe and the first inlet pipe, Afterwards, the gas is discharged to the outside through the sub-pipe and the main pipe, The first energy of the gas in the first inlet pipe is controlled to a constant value by the first energy control member, A gas control system for semiconductor equipment, wherein the second energy of the gas in the sub-pipe is controlled to a constant value by the second energy control member.

2. In paragraph 1, The first energy includes the first pressure energy and the first kinetic energy, A gas control system for semiconductor equipment, wherein the first energy control member controls the first pressure energy of the gas to a constant value.

3. In paragraph 2, The second energy includes the second pressure energy and the second kinetic energy, A gas control system for semiconductor equipment, wherein the first kinetic energy of the gas within the first inlet pipe is less than the second kinetic energy of the gas within the sub-pipe.

4. In paragraph 1, A gas control system for semiconductor equipment, wherein the width of the first inlet pipe is larger than the width of the sub pipe.

5. In paragraph 1, A gas control system for semiconductor equipment, wherein the sub-pipe includes a portion whose width gradually decreases as it moves from the energy loss member toward the main pipe.

6. In paragraph 1, The above energy loss member includes a scrubber, The above scrubber A scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the above gas; A scrubbing plate disposed within the scrubbing chamber; and comprising a plurality of scrubbing holes penetrating the scrubbing plate, A gas control system for semiconductor equipment, wherein the energy of the gas is lost as the gas passes through the plurality of scrubbing holes.

7. In paragraph 6, Further comprising a solution supply nozzle for supplying a scrubbing solution to the upper surface of the scrubbing plate, A gas control system for semiconductor equipment, wherein at least a portion of the impurities contained in the gas are dissolved in the scrubbing solution on the upper surface of the scrubbing plate after the gas passes upward through the plurality of scrubbing holes.

8. In paragraph 1, A second semiconductor process is performed, and a second process chamber different from the first process chamber, A second exhaust pipe connected to the second process chamber and through which the gas used in the second semiconductor process is exhausted; A second inlet pipe having one end connected to the second discharge pipe and the other end connected to the energy loss member, Further comprising a third energy control member disposed within the second inlet pipe and controlling the third energy of the gas passing through the second inlet pipe; The first energy includes the first pressure energy and the first kinetic energy, The third energy includes the third pressure energy and the third kinetic energy, A gas control system for semiconductor equipment, wherein the first pressure energy and the third pressure energy are the same.

9. In paragraph 8, The second energy includes the second pressure energy and the second kinetic energy, A gas control system for semiconductor equipment, wherein the third kinetic energy of the gas within the second inlet pipe is less than the second kinetic energy of the gas within the sub-pipe.

10. In paragraph 1, A second semiconductor process is performed, and a second process chamber different from the first process chamber, A gas control system for a semiconductor facility, further comprising a second exhaust pipe, one side of which is connected to the second process chamber, the other side of which is connected to the first inlet pipe, and through which a gas used in the second semiconductor process is exhausted.

11. In paragraph 1, Further comprising a first pressure measuring instrument for measuring the first pressure of the gas passing through the first inlet pipe; The first energy control member comprises a rotatable first rotation module, If the absolute value of the first pressure measured by the first pressure measuring instrument is greater than the first pressure setting value, the rotation speed of the first rotation module is reduced, A gas control system for semiconductor equipment, which increases the rotation speed of the first rotation module when the absolute value of the first pressure measured by the first pressure measuring instrument is smaller than the first pressure setting value.

12. In paragraph 11, Further comprising a second pressure measuring instrument for measuring the second pressure of the gas passing through the sub-pipe; The second energy control member comprises a rotatable second rotation module, If the magnitude of the absolute value of the second pressure measured by the second pressure measuring instrument is greater than the second set value, the rotation speed of the second rotation module is reduced, A gas control system for semiconductor equipment, which increases the rotation speed of the second rotation module when the absolute value of the second pressure measured by the second pressure measuring instrument is smaller than the second set value.

13. In paragraph 12, A gas control system for semiconductor equipment, wherein the first pressure remains constant even when the rotation speed of the second rotation module changes.

14. Multiple process chambers where semiconductor processes are performed; A plurality of exhaust pipes connected to each of the plurality of process chambers, and through which gases used in the semiconductor process performed within the plurality of process chambers are discharged from the plurality of process chambers; An inlet pipe connected to all of the above plurality of discharge pipes; An energy loss member connected to the above inlet pipe and causing loss of energy of the gas provided through the above inlet pipe; A sub-pipe through which the gas passing through the energy loss member is discharged; A main pipe connected to the above sub-pipe; and An energy control member is disposed within the sub-pipe and controls the energy of the gas passing through the sub-pipe, The above gas is provided to the energy loss member through the plurality of discharge pipes and the inlet pipe, Afterwards, the gas is discharged to the outside through the sub-pipe and the main pipe, A gas control system for semiconductor equipment, wherein the ratio of the sum of the cross-sectional areas of each of the plurality of discharge pipes to the cross-sectional area of ​​the sub-pipe at the point where the main pipe and the sub-pipe are connected is 2 or more and 10 or less.

15. In paragraph 14, A gas control system for semiconductor equipment, wherein the cross-sectional area of ​​the sub-pipe is constant as it moves from the energy loss member toward the main pipe.

16. In paragraph 14, The above energy loss member includes a scrubber, The above scrubber A scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the above gas; A scrubbing plate disposed within the scrubbing chamber; and comprising a plurality of scrubbing holes penetrating the scrubbing plate, A gas control system for semiconductor equipment, wherein the energy of the gas is lost as the gas passes through the plurality of scrubbing holes.

17. In paragraph 16, Further comprising a solution supply nozzle for supplying a scrubbing solution to the upper surface of the scrubbing plate, A gas control system for semiconductor equipment, wherein at least a portion of the impurities contained in the gas are dissolved in the scrubbing solution on the upper surface of the scrubbing plate after the gas passes upward through the plurality of scrubbing holes.

18. Process chamber where semiconductor processes are performed; An exhaust pipe connected to the above process chamber and through which gas used in the semiconductor process is discharged; An inlet pipe connected to the above discharge pipe; An energy loss member connected to the above inlet pipe and causing loss of energy of the gas provided through the above inlet pipe; A sub-pipe through which the gas passing through the energy loss member is discharged; A main pipe connected to the above sub-pipe; A velocity meter for measuring the flow rate of the gas passing through the sub-pipe; A pressure gauge for measuring the pressure of the gas passing through the fraud sub-pipe; and An energy control member disposed within the sub-pipe and configured to control the energy of the gas passing through the sub-pipe, and including a rotatable rotating module, The above gas is provided to the energy loss member through the above discharge pipe and the above inlet pipe, Afterwards, the gas is discharged to the outside through the sub-pipe and the main pipe, The energy of the above gas includes pressure energy and kinetic energy, The kinetic energy of the above gas is proportional to the velocity of the gas, The pressure energy of the above gas is proportional to the pressure of the above gas, The kinetic energy of the gas is calculated using the flow rate of the gas measured by the velocity meter. The pressure energy of the gas is calculated using the pressure of the gas measured by the pressure measuring instrument, When the sum of the kinetic energy of the gas and the pressure energy of the gas exceeds a set value, the rotation speed of the rotation module of the energy control member is reduced, A gas control system for semiconductor equipment, wherein when the sum of the kinetic energy of the gas and the pressure energy of the gas is less than the set value, the rotation speed of the rotation module of the energy control member increases.

19. In paragraph 18, The above energy loss member includes a scrubber, The above scrubber A scrubbing chamber defining a scrubbing space for scrubbing impurities contained in the above gas; A scrubbing plate disposed within the scrubbing chamber; and comprising a plurality of scrubbing holes penetrating the scrubbing plate, A gas control system for semiconductor equipment, wherein the energy of the gas is lost as the gas passes through the plurality of scrubbing holes.

20. In paragraph 19, Further comprising a solution supply nozzle for supplying a scrubbing solution to the upper surface of the scrubbing plate, A gas control system for semiconductor equipment, wherein at least a portion of the impurities contained in the gas are dissolved in the scrubbing solution on the upper surface of the scrubbing plate after the gas passes upward through the plurality of scrubbing holes.

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