Temperature control device for phosphorus cracking source, phosphorus cracking source, and vacuum processing system
By using a temperature control device that combines cooling fluid and cooling pool, along with a high-precision stepper motor and PID control, the problem of unstable white phosphorus beam temperature was solved, achieving a stable supply of high-purity white phosphorus vapor and improving the quality of phosphide films and the stability of the process.
Patent Information
- Application Number
- PCT/CN2024/119044
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-08-07
- Filing Date
- 2024-09-14
- Publication Date
- 2026-02-12
AI Technical Summary
Existing technologies struggle to stably control the temperature of the white phosphorus beam, resulting in uneven quality of the phosphide film during the coating process and failing to meet the requirements for high-purity white phosphorus vapor.
A temperature control device combining cooling fluid and cooling pool is adopted. A closed-loop control circuit is established through temperature sensor and temperature controller. A needle valve driven by a high-precision stepper motor controls the flow rate of white phosphorus vapor. Combined with PID controller, the flow rate of cooling fluid is precisely adjusted to achieve precise and stable control of the temperature of white phosphorus pool.
It improves the stability and temperature control range of the white phosphorus pool, ensures the stability and uniformity of the phosphorus source beam, and is suitable for processes such as chemical vapor deposition, sputtering and molecular beam epitaxy, providing high-quality phosphide films.
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Figure CN2024119044_12022026_PF_FP_ABST
Abstract
Description
Temperature control device for phosphorus cracking source, phosphorus cracking source and vacuum processing system TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of vacuum equipment, in particular to a temperature control device for a phosphorus cracking source, a phosphorus cracking source and a vacuum processing system. BACKGROUND
[0002] Phosphorus-containing compound semiconductors have excellent electrical and optical properties and are of great value in the fields of optoelectronics and microelectronics. White phosphorus vapor used for the preparation of various optoelectronic semiconductor devices must be very pure, but there is currently no high-purity white phosphorus commercially available. The white phosphorus used in actual film deposition is generally obtained by conversion from solid or gaseous phosphorus-containing compounds or elemental phosphorus. During the film deposition process, a stable white phosphorus beam is a prerequisite for repeatedly obtaining high-quality and uniform phosphorus compound films, and therefore a device capable of stably controlling the temperature of the white phosphorus region of the phosphorus cracking source is needed.
[0003] SUMMARY
[0004] The present disclosure provides a temperature control device for a phosphorus cracking source, comprising:
[0005] a fluid conduit configured to allow a cooling fluid to flow into the cooling region; and
[0006] a cooling pool configured to accommodate at least a portion of the fluid conduit to cool the cooling fluid in the fluid conduit.
[0007] The present disclosure provides a vacuum processing system, comprising:
[0008] a vacuum processing chamber; and
[0009] According to the phosphorus cracking source in any one of the embodiments of the present disclosure, the phosphorus cracking source is in vacuum sealing connection with the vacuum processing chamber and is configured to provide a phosphorus source beam to the vacuum processing chamber. BRIEF DESCRIPTION OF DRAWINGS
[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the drawings needed in the description of the embodiments or the prior art will be briefly introduced. Obviously, the drawings in the following description are only one embodiment of the present disclosure, and other drawings can also be obtained by those skilled in the art without creative labor.
[0011] FIG. 1 shows a structural schematic diagram of a temperature control device for a phosphorus cracking source according to some embodiments of the present disclosure.
[0012] FIG. 2 shows a structural schematic diagram of a phosphorus cracking source according to some embodiments of the present disclosure.
[0013] FIG. 3 shows a structural schematic diagram of a cooling zone according to some embodiments of the present disclosure.
[0014] FIG. 4 shows a temperature change curve of a white phosphorus pool in a phosphorus cracking source phosphorus conversion process according to some embodiments of the present disclosure.
[0015] FIG. 5 shows a beam current stability change curve of a phosphorus cracking source phosphorus source according to some embodiments of the present disclosure.
[0016] FIG. 6 shows a structural schematic diagram of a vacuum processing system according to some embodiments of the present disclosure.
[0017] In the above-mentioned drawings, the respective reference numerals represent:
[0018] 10000 - vacuum processing system
[0019] 1000 - phosphorus cracking source
[0020] 100 - temperature control device for phosphorus cracking source
[0021] 110 - fluid pipe
[0022] 111 - coil pipe
[0023] 120 - cooling pool
[0024] 130 - temperature control unit
[0025] 131 - temperature sensor
[0026] 132 - temperature controller
[0027] 140 - mass flow controller
[0028] 150 - cooling zone
[0029] 200 - white phosphorus pool
[0030] 300 - packaging structure
[0031] 310 - cavity interlayer
[0032] 320a, 320b, 320c, 320d - baffle
[0033] 400 - red phosphorus pool
[0034] 500 - cracking zone
[0035] 600 - needle valve
[0036] 2000 - vacuum processing cavity DETAILED DESCRIPTION
[0037] It should be apparent that the described embodiments are only exemplary and not limiting of the present disclosure.
[0038] In the description of the present disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", "top", "bottom", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present disclosure. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. In the description of the present disclosure, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connected", "coupling" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. In the description of the present disclosure, the distal end or the distal side refers to the end or side that goes deep into the vacuum environment (for example, the vacuum cavity), and the proximal end or the proximal side refers to the end or side opposite to the distal end or the distal side (for example, the end or side away from the vacuum cavity, or the end or side close to the wall of the vacuum cavity inside the vacuum cavity, etc.). Alternatively, the end or side close to the driving device is the proximal end or the proximal side, and the end or side away from the driving device is the distal end or the distal side. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances.
[0039] Fig. 1 shows a structural schematic diagram of a temperature control device 100 for a phosphorus cracking source according to some embodiments of the present disclosure.
[0040] As shown in Fig. 1, in some embodiments of the present disclosure, the temperature control device 100 for the phosphorus cracking source can include a fluid pipe 110 and a cooling pool 120. The fluid pipe 110 is used to allow the cooling fluid to flow into the cooling area 150. The cooling pool 120 is used to accommodate at least a part of the fluid pipe 110 to cool the cooling fluid in the fluid pipe.
[0041] The temperature control device 100 for the phosphorus cracking source in some embodiments of the present disclosure adopts a mixed temperature control method of cooling fluid and cooling pool 120. The cooling fluid flows through the part of the fluid pipe 110 located in the cooling pool 120 and is cooled, and then enters the cooling area 150 through the fluid pipe 110, which improves the cooling efficiency and temperature control range. The arrow direction in Fig. 1 shows the cooling fluid flow direction. Similarly, the arrow direction in other figures also shows the cooling fluid flow direction.
[0042] As shown in FIG. 1, in some embodiments of the present disclosure, the fluid conduit 110 can include at least one section of coil pipe 111 located within the cooling pool 120 to cool the cooling fluid by the cooling pool 120.
[0043] Those skilled in the art can understand that although FIG. 1 only shows that the coil pipe 111 is located within the cooling pool 120, this is only exemplary. Non-coil pipe sections (e.g. straight sections) of the fluid conduit 110 can also be partially located within the cooling pool 120. In addition, the coil pipe 111 should be broadly understood to include any suitable coiled form, such as a serpentine pipe, a spiral pipe, etc. With the coil pipe 111, the heat exchange efficiency of the cooling fluid can be improved, and the volume of the cooling pool 120 can also be reduced.
[0044] As shown in FIG. 1, in some embodiments of the present disclosure, the temperature control device 100 for the phosphorus cracking source can also include a temperature control unit 130. The temperature control unit 130 can include a temperature sensor 131 and a temperature controller 132. The temperature sensor 131 is arranged within the cooling area 150 to measure the temperature of the cooling area 150 (e.g. the white phosphorus pool 200 shown in FIG. 2 located within the cooling area 150). The signal input end of the temperature controller 132 is connected with the temperature sensor 131, and the temperature controller 132 controls the flow of the cooling fluid in the fluid conduit 110 based on the temperature signal output by the temperature sensor 131.
[0045] As shown in FIG. 1, in some embodiments of the present disclosure, the temperature control device 100 for the phosphorus cracking source can also include a mass flow controller (MFC) 140. The mass flow controller 140 can be arranged on the fluid conduit 110 and connected with the temperature controller 132. The mass flow controller 140 can be used to receive a control signal from the temperature controller 132 and control the flow of the cooling fluid in the fluid conduit 110 based on the control signal.
[0046] In some embodiments of the present disclosure, by combining the cooling of the cooling fluid and the cooling medium in the cooling pool 120, a closed-loop control circuit can be established for the temperature of the cooling area 150 and the flow of the cooling fluid, thereby improving the temperature control range and stability of the white phosphorus pool. In some embodiments, the temperature controller 132 can include a proportional-integral-derivative (PID) controller, and the temperature of the cooling area 150 can be precisely adjusted by the temperature controller 132. The PID control relationship between the temperature of the cooling area 150 and the cooling fluid is a negative feedback adjustment, which can further improve the temperature stability of the cooling area 150.
[0047] As shown in FIG. 1, in some embodiments of the present disclosure, the cooling pool 120 can include a cooling medium (not shown in the figure). In some embodiments, the cooling medium can include a cold source with a stable temperature, such as an ice water bath.
[0048] As shown in FIG. 1, in some embodiments of the present disclosure, the cooling pool 120 can include a refrigerator (not shown in the figure). For example, the refrigerator can include a water bath machine or the like for providing a cooling medium with a stable temperature. Alternatively, the refrigerator can also directly cool the fluid pipe 110.
[0049] In some embodiments of the present disclosure, the cooling fluid (e.g., gas) is cooled by using a cooling medium, for example, a cooling medium capable of providing a stable temperature, which can avoid large fluctuations in the temperature of the white phosphorus pool 200 caused by changes in the temperature of the cooling medium.
[0050] As shown in FIG. 1, in some embodiments of the present disclosure, the cooling fluid is a gas. In some embodiments, the gas includes but is not limited to air, nitrogen, and the like. Using a gas as the cooling fluid, the specific heat capacity is small, and the temperature response is fast. For example, when the flow rate of the cooling fluid changes, the cooling zone 150 will quickly respond to the change in the flow rate of the gas.
[0051] In some embodiments of the present disclosure, the cooling fluid can be dry compressed gas (e.g., compressed gas with a pressure of 0.2-1 MPa).
[0052] FIG. 2 shows a structural schematic diagram of a phosphorus cracking source 1000 according to some embodiments of the present disclosure.
[0053] As shown in FIG. 2, in some embodiments of the present disclosure, the phosphorus cracking source 1000 can include a white phosphorus pool 200 and a temperature control device 100 for the phosphorus cracking source according to any one of the embodiments of the present disclosure. The cooling zone 150 surrounds the white phosphorus pool 200, and the temperature control device 100 for the phosphorus cracking source can control the temperature of the white phosphorus pool 200 through the cooling zone 150.
[0054] In some embodiments of the present disclosure, the temperature control device 100 for the phosphorus cracking source adjusts the temperature of the white phosphorus pool 200 by a mixed temperature control method, which can precisely and stably adjust the temperature of the white phosphorus pool 200 and expand the temperature control range of the white phosphorus pool 200. Therefore, the temperature difference between the red phosphorus pool and the white phosphorus pool can be increased during the phosphorus conversion process, thereby improving the phosphorus conversion efficiency and providing a stable white phosphorus source beam. The stable white phosphorus vapor phosphorus source beam provided by the precise adjustment of the temperature of the white phosphorus pool 200 can be easily used as a white phosphorus vapor source of the phosphorus source beam, for example, for chemical vapor deposition, sputtering, vacuum deposition, molecular beam epitaxy, and the like.
[0055] As shown in FIG. 2, in some embodiments of the present disclosure, the phosphorus cleavage source 1000 can further include an encapsulation structure 300. The encapsulation structure 300 is arranged to enclose the white phosphorus pool 200, and the interior of the encapsulation structure 300 forms the cooling zone 150. There is a gap between the outer wall of the white phosphorus pool 200 and the inner wall of the encapsulation structure 300, forming a cavity interlayer 310. The cavity interlayer 310 encloses the white phosphorus pool 200, allowing the cooling fluid to flow through to cool the white phosphorus pool 200.
[0056] In some embodiments, the temperature sensor 131 can be installed outside the pool body of the white phosphorus pool 200. In some embodiments, as shown in FIG. 2, the temperature sensor 131 can be installed outside the encapsulation structure 300. The temperature controller 132 receives the temperature signal of the temperature sensor 131, and controls the mass flow controller 140 to adjust the flow of the cooling fluid based on the temperature signal output by the temperature sensor 131. In some embodiments, the temperature controller 132 adopts PID control, which adjusts the output of the controller through the change of the controlled object, forming a closed-loop control circuit. When the temperature sensor 131 senses the temperature of the white phosphorus pool 200 and feeds back to the temperature controller 132, the temperature controller 132 adjusts the flow of the cooling fluid through the mass flow controller 140 according to the deviation of the temperature measurement value from the set value, the trend of the measurement value, and other parameters, and the adjustment of the cooling fluid flow changes the temperature of the white phosphorus pool 200, forming a negative feedback closed-loop control circuit of "white phosphorus pool temperature-temperature controller-gas flow". This negative feedback regulation can make the system quickly respond to temperature changes, while also adjusting the white phosphorus pool 200 temperature to remain stable around the set value.
[0057] FIG. 3 shows a structural schematic diagram of the encapsulation structure 300 according to some embodiments of the present disclosure.
[0058] As shown in FIG. 3, in some embodiments of the present disclosure, the encapsulation structure 300 further includes at least one baffle (e.g., baffle 320a, baffle 320b, baffle 320c, baffle 320d) for separating the cavity interlayer 310 into multiple interlayer chambers. In some embodiments, the baffle 320a and the baffle 320b separate the encapsulation interlayer 310, and the baffle 320b is provided with at least one through hole. The baffle 320c and the baffle 320d separate the encapsulation interlayer 310, and the baffle 320c is provided with at least one through hole. The cooling fluid can flow between the multiple interlayer chambers through the at least one through hole on the baffle (e.g., baffle 320b, baffle 320c) (e.g., by sequentially flowing through different interlayer chambers) to cool the white phosphorus pool 200. The structural design of the baffle allows the cooling fluid to flow fully in the cavity interlayer 310, improving the cooling efficiency and uniformity.
[0059] Those skilled in the art can understand that although Figure 3 only shows four baffles (baffle 320a, baffle 320b, baffle 320c, and baffle 320d), this is only exemplary, and the packaging structure 300 can also include other numbers of baffles. In some embodiments, a whole baffle can be used to separate the packaging interlayer 310. Similarly, a proper number of through holes can be provided on the baffles at corresponding positions according to the design of the flow path of the cooling fluid.
[0060] In some embodiments of the present disclosure, as shown in Figure 3, the fluid pipe 110 of the temperature control device for the phosphorus cracking source is in communication with the fluid inlet located at the top of the packaging structure 300 for guiding the cooling fluid to flow into the cooling area 150. Moreover, the fluid pipe 110 extends into the bottom of the packaging structure 300 for guiding the cooling fluid to flow out of the cooling area 150. In other embodiments of the present disclosure, the fluid pipe 110 can be in communication with the fluid outlet located at the bottom of the packaging structure 300. By staggering the inlet and outlet of the cooling fluid, the flow path of the cooling fluid can be effectively arranged so that the cooling fluid can flow sufficiently to improve the heat exchange and cooling efficiency.
[0061] As shown in Figure 2, in some embodiments of the present disclosure, the phosphorus cracking source 1000 can also include a red phosphorus pool 400. The red phosphorus pool 400 is in communication with the white phosphorus pool 200 so that the red phosphorus vapor generated by the red phosphorus pool 400 can diffuse to the white phosphorus pool 200.
[0062] As shown in Figure 2, in some embodiments of the present disclosure, the phosphorus cracking source 1000 can also include a cracking area 500. The cracking area 500 is in communication with the white phosphorus pool 200.
[0063] In conventional technology, in order to accurately control the size of the gas flow, a high-precision mass flow controller (MFC) is usually used, but the MFC is not suitable for the white phosphorus (P4) vapor which is relatively corrosive, so a threaded leak valve is used instead. However, the threaded leak valve has a delay, and when the white phosphorus vapor flux is too large, the threaded leak valve cannot be closed small enough to discharge the white phosphorus vapor in the pipeline, and a separate air exhaust pipeline is needed to discharge the excess white phosphorus vapor in the pipeline, which is complex in structure and cannot achieve rapid and accurate beam current adjustment.
[0064] As shown in Figure 2, in some embodiments of the present disclosure, the phosphorus cracking source 1000 can also include a needle valve 600 and a stepper motor (not shown in the figure). The needle valve 600 is arranged on the communication pipeline between the cracking area 500 and the white phosphorus pool 200 for controlling the flow of the white phosphorus vapor from the white phosphorus pool 200 to the cracking area 500. The stepper motor is connected with the needle valve 600, and the gas flow of the needle valve 600 can be controlled by controlling the stepper motor. For example, the power output shaft of the stepper motor can be in transmission connection with the valve rod of the needle valve 600, and the gas flow of the needle valve 600 can be controlled by controlling the stepper motor.
[0065] In some embodiments of the present disclosure, by replacing the conventional threaded leak valve with a needle valve 600 driven by a high-precision stepper motor, the needle valve has the advantages of good switching repeatability, convenient control, rapid feedback, and high opening degree positioning accuracy.
[0066] As shown in FIG. 2, in some embodiments of the present disclosure, when the phosphorus cracking source 1000 is in the white phosphorus conversion state: the needle valve 600 is closed, the red phosphorus pool 400 is heated (for example, 300-400°C), and the temperature of the white phosphorus pool 200 is set to ≤40°C (for example, 35°C, 30°C, 25°C, etc.) by the temperature controller 132. The red phosphorus vapor generated by the high temperature of the red phosphorus pool 400 diffuses through the connecting pipeline between the red phosphorus pool 400 and the white phosphorus pool 200, and condenses into high-purity white phosphorus solid in the white phosphorus pool 200.
[0067] In some embodiments of the present disclosure, when the phosphorus cracking source 1000 is in the general process use state: the temperature of the red phosphorus pool 400 is lowered (always higher than the temperature of the white phosphorus pool 200, for example, 150-300°C), the temperature of the white phosphorus pool 200 is adjusted (usually 40-80°C) to generate white phosphorus vapor, the needle valve 600 is opened to allow the white phosphorus vapor to pass through the pipeline to the cracking zone 500, and the P4 in the cracking zone 500 at a high temperature (usually >900°C) undergoes thermal cracking to generate a phosphorus source beam that enters a vacuum processing chamber (for example, the vacuum processing chamber 2000 shown in FIG. 6) for phosphorus-containing film deposition.
[0068] It is generally believed that the greater the temperature difference between the white phosphorus pool 200 and the red phosphorus pool 400, the higher the white phosphorus collection efficiency. The more stable the temperature of the white phosphorus pool 200, the higher the stability of the obtained white phosphorus source beam. Therefore, it is necessary to have a phosphorus cracking source 1000 that can stably control the temperature of the white phosphorus pool 200 while maximizing the temperature difference between the red phosphorus pool 400 and the white phosphorus pool 200 during white phosphorus conversion. According to the phosphorus cracking source 1000 in some embodiments of the present disclosure, by changing the temperature of different regions (such as the white phosphorus pool 200 and the red phosphorus pool 400), the conversion efficiency of white phosphorus and the stability of the phosphorus source beam can be controlled and adjusted.
[0069] FIG. 4 shows a temperature change curve of the white phosphorus pool 200 during the white phosphorus conversion process of the phosphorus cracking source 1000 according to some embodiments of the present disclosure.
[0070] In some embodiments of the present disclosure, a constant-temperature water bath is used as the cooling source of the cooling pool 120, the temperature of the water bath is set to a temperature between 0-20°C, the temperature of the white phosphorus pool 200 is controlled to 30°C by the temperature controller 132 and the MFC 140 closed-loop control circuit, the needle valve 600 is closed, the cracking zone 500 is raised to a cracking temperature (for example, about 900-1000°C), the red phosphorus pool is raised to a white phosphorus conversion temperature (about 300-400°C), and the white phosphorus conversion process is started. The temperature change of the white phosphorus pool 200 during the white phosphorus conversion process is shown in FIG. 4, and it can be seen that the temperature of the white phosphorus pool 200 is stably controlled within the range of 30±0.1°C.
[0071] During the conversion of white phosphorus, although the white phosphorus pool 200 is continuously irradiated by high temperature (about 300-400℃) of the red phosphorus pool 400, the temperature of the white phosphorus pool 200 can still be kept stable at a low temperature (about 30℃) by the temperature control device 100 for the phosphorus cracking source according to some embodiments of the present disclosure, and the mixed temperature control increases the heat capacity of the cooling flow, thereby improving the conversion efficiency of the white phosphorus.
[0072] FIG. 5 shows a curve diagram of the stability of the phosphorus source beam of the phosphorus cracking source 1000 according to some embodiments of the present disclosure.
[0073] In some embodiments of the present disclosure, a constant temperature water bath is used as the cooling source of the cooling pool 120, the water bath temperature is set to 0-20℃, the red phosphorus pool 400 is kept at standby temperature (about 200-300℃), the cracking zone 500 is raised to cracking temperature (about 900-1000℃), the temperature of the white phosphorus pool 200 is controlled to 40-80℃ by the temperature controller 132 and the MFC 140 closed loop control, the needle valve 600 is opened to a certain opening degree (for example, the needle valve opening degree is 5%-15%), at this time the phosphorus source beam is generated from the outlet of the cracking zone 500, and the phosphorus source beam stability is tested by the beam flux meter (BFM) in the molecular beam epitaxy (MBE) cavity. As shown in FIG. 5, it can be seen that the size of the phosphorus source beam is stable in the range of (2.75±0.03)E-6mbar within 60 minutes, and the beam fluctuation is better than ±1%.
[0074] Since the temperature control device 100 for the phosphorus cracking source according to some embodiments of the present disclosure can keep the temperature of the white phosphorus pool 200 stable for a long time, the finally obtained phosphorus source beam has good stability and high repeatability, which provides a good foundation for obtaining uniform and repeatable phosphorus-containing thin films in the process.
[0075] FIG. 6 shows a schematic diagram of a vacuum processing system 10000 according to some embodiments of the present disclosure.
[0076] As shown in FIG. 6, in some embodiments of the present disclosure, the vacuum processing system 10000 can include a vacuum processing chamber 2000 and a phosphorus cracking source 1000 according to any one of the embodiments of the present disclosure. The phosphorus cracking source 1000 is in vacuum sealing connection with the vacuum processing chamber 2000, and is used to provide a phosphorus source beam to the vacuum processing chamber 2000.
[0077] It should be noted that the above is only an exemplary embodiment of the present disclosure, and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A temperature control device for a source of phosphor cleavage, characterized by, comprising: a fluid conduit for allowing a cooling fluid to flow into a cooling zone; and a cooling pool for containing at least a portion of the fluid conduit to cool the cooling fluid in the fluid conduit. The fluid conduit comprises at least one section of coil pipe located in the cooling pool to cool the cooling fluid by the cooling pool.
2. The temperature control device for a phosphorus cracking source of claim 1, wherein, Further comprising a temperature control unit comprising:
3. The temperature control device for a phosphorus cracking source of claim 1, wherein, a temperature sensor arranged in the cooling zone for measuring the temperature of the cooling zone; and a temperature controller having a signal input connected to the temperature sensor, the temperature controller being configured to control the flow of the cooling fluid in the fluid conduit based on a temperature signal output by the temperature sensor. Further comprising a mass flow controller arranged on the fluid conduit and connected to the temperature controller, the mass flow controller being configured to receive a control signal from the temperature controller and control the flow of the cooling fluid in the fluid conduit based on the control signal.
4. The temperature control device for a phosphorus cracking source of claim 3, wherein, 5. The temperature control device for a phosphorus cracking source according to claim 1, wherein: the cooling pool comprises a cooling medium and / or a refrigerator; and / or the cooling fluid is a gas. comprising:
6. A source of phosphorus cleavage, characterized in that, a white phosphorus pool; and the temperature control device for a phosphorus cracking source according to any one of claims 1-5, the cooling zone surrounding the white phosphorus pool, the temperature control device for a phosphorus cracking source being capable of controlling the temperature of the white phosphorus pool by the cooling zone. Further comprising an encapsulation structure arranged to surround the white phosphorus pool, an interior of the encapsulation structure forming the cooling zone, and a gap between an outer wall of the white phosphorus pool and an inner wall of the encapsulation structure forming a cavity interlayer surrounding the white phosphorus pool for allowing a cooling fluid to flow through. The encapsulation structure further comprises at least one baffle for separating the cavity interlayer into a plurality of interlayer chambers, the baffle comprising at least one through hole through which the cooling fluid flows between the plurality of interlayer chambers to cool the white phosphorus pool.
7. The phosphorus cleavage source of claim 6, wherein, The fluid conduit of the temperature control device for a phosphorus cracking source is in communication with a fluid inlet at a top of the encapsulation structure for guiding a cooling fluid to flow into the cooling zone, and the fluid conduit is in communication with or extends into a fluid outlet at a bottom of the encapsulation structure for guiding the cooling fluid to flow out of the cooling zone.
8. The phosphorus cleavage source of claim 7, wherein, Further comprising:
9. The phosphorus cleavage source of claim 7, wherein, a red phosphorus pool in communication with the white phosphorus pool to allow red phosphorus vapor generated by the red phosphorus pool to diffuse into the white phosphorus pool; and / or 10. The phosphorus cleavage source of claim 6, wherein, a cracking zone in communication with the white phosphorus pool. Further comprising: a needle valve arranged on a communication line between the cracking zone and the white phosphorus pool for controlling the flow of white phosphorus vapor from the white phosphorus pool to the cracking zone; and a stepper motor connected to the needle valve for adjusting the needle valve.
11. The phosphorus cleavage source of claim 10, wherein, comprising: a vacuum processing chamber; and the phosphorus cracking source according to any one of claims 6-11, being in vacuum-sealed connection with the vacuum processing chamber for providing a phosphorus source beam to the vacuum processing chamber. 12. A vacuum processing system, characterized by
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