Semiconductor module, vehicle, and method for manufacturing semiconductor module

Abstract

This semiconductor module comprises a heat dissipation member, a first semiconductor element, a second semiconductor element, a first power terminal, a second power terminal, and a first external connection member. The first power terminal is electrically connected to the first semiconductor element. The second power terminal is electrically connected to the second semiconductor element. The first external connection member has a first housing part, a first conductive part, and a second conductive part. The first power terminal is conductively joined to the first conductive part. The second power terminal is conductively joined to the second conductive part. When viewed in a first direction, the first housing part overlaps the heat dissipation member. In the first direction, a part of the first housing part is positioned between the heat dissipation member, and the first conductive part and the second conductive part.

Description

Semiconductor module, vehicle, and method for manufacturing semiconductor module

[0001] The present disclosure relates to a semiconductor module, a manufacturing method thereof, and a vehicle equipped with the semiconductor module.

[0002] Conventionally, semiconductor devices equipped with semiconductor elements (such as MOSFETs and IGBTs) having a switching function have been widely known and are mainly used for power conversion. Patent Document 1 discloses an example of such a semiconductor device. The semiconductor device disclosed in this document includes a sealing resin that covers the semiconductor element, a heat dissipation member, and an attachment member. The attachment member is a leaf spring. The semiconductor device is attached to the heat dissipation member via the leaf spring. The sealing resin is pressed against the attachment member.

[0003] The semiconductor device disclosed in Patent Document 1 further includes a plurality of power terminals. Each of the power terminals protrudes from the sealing resin. In plan view, each of the power terminals entirely overlaps the heat dissipation member. In this case, the degree of freedom for external connection of each of the power terminals is limited, and there is a concern that the heat dissipation member and the power terminals may cause a decrease in the dielectric strength voltage of the semiconductor device.

[0004] International Publication No. 2023 / 047890

[0005] [Summary] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor module that can improve heat dissipation, increase the degree of freedom regarding external connection of power terminals, and suppress a decrease in dielectric strength voltage.

[0006] A semiconductor module provided by a first aspect of the present disclosure includes a heat dissipation member, a first semiconductor element and a second semiconductor element located on one side of the heat dissipation member in a first direction, a first power terminal electrically connected to the first semiconductor element, a second power terminal electrically connected to the second semiconductor element, and a first external connection member electrically connected to the first power terminal and the second power terminal. The second semiconductor element is electrically connected to the first semiconductor element. The first external connection member has a first conductive portion to which the first power terminal is electrically connected, a second conductive portion to which the second power terminal is electrically connected, and a first housing portion supporting the first conductive portion and the second conductive portion. When viewed in the first direction, the first housing portion overlaps the heat dissipation member. In the first direction, a portion of the first housing portion is located between the heat dissipation member and the first conductive portion and the second conductive portion.

[0007] A semiconductor module provided by a second aspect of the present disclosure includes a heat dissipation member, a first semiconductor element and a second semiconductor element located on one side of the heat dissipation member in a first direction, power terminals electrically connected to the first semiconductor element and the second semiconductor element, and an external connection member electrically connected to the power terminals. The external connection member includes a conductive portion to which the power terminals are electrically connected, and a housing portion supporting the conductive portion. When viewed in the first direction, the housing portion overlaps the heat dissipation member. In the first direction, a portion of the housing portion is located between the heat dissipation member and the conductive portion.

[0008] A third aspect of the present disclosure provides a method for manufacturing a semiconductor module, comprising: a first step of joining a semiconductor device to a support surface of a heat dissipation member having a support surface facing one side in a first direction; and a second step of arranging a first external connection member on the support surface. The semiconductor device includes a first semiconductor element, a second semiconductor element conducting to the first semiconductor element, a first power terminal conducting to the first semiconductor element, and a second power terminal conducting to the second semiconductor element. The first external connection member has a first conductive part conducting to the first power terminal, a second conductive part conducting to the second power terminal, and a first housing part supporting the first conductive part and the second conductive part and arranged on the support surface. The second step is either a pre-step or a post-step of the first step. In the second step, the first housing part is arranged on the support surface so that a portion of the first housing part is located between the heat dissipation member and the first conductive part and the second conductive part. In either the first step or the second step, the first power terminal is conductively joined to the first conductive portion, and the second power terminal is conductively joined to the second conductive portion.

[0009] A fourth aspect of the present disclosure provides a vehicle including a drive source and a semiconductor module, the semiconductor module being electrically connected to the drive source. The semiconductor module further includes a third power terminal, a first conductive layer, a second conductive layer, an insulating layer, a heat dissipation layer, and a sealing resin, in addition to the semiconductor module provided by the first aspect of the present disclosure.

[0010] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0011] FIG. 1 is a perspective view of a semiconductor module according to a first embodiment of the present disclosure. FIG. 2 is a plan view of one of three semiconductor devices included in the semiconductor module shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, seen through the sealing resin. FIG. 4 is a partial enlarged view of FIG. 3. FIG. 5 is a plan view corresponding to FIG. 2, with the sealing resin and second conductive member omitted. FIG. 6 is a bottom view of the semiconductor device shown in FIG. 2. FIG. 7 is a right side view of the semiconductor device shown in FIG. 2. FIG. 8 is a left side view of the semiconductor device shown in FIG. 2. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a partial enlarged view of a first semiconductor element and its periphery shown in FIG. 9. FIG. 11 is a partial enlarged view of a second semiconductor element and its periphery shown in FIG. 9. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a plan view of the semiconductor module shown in FIG. 1. FIG. 15 is a partial enlarged view of FIG. 14. FIG. 16 is a plan view corresponding to FIG. 14 , partially showing the first external connection member and the second external connection member. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 15 . FIG. 18 is a cross-sectional view illustrating a manufacturing process for the semiconductor module shown in FIG. 1 . FIG. 19 is a cross-sectional view illustrating a manufacturing process for the semiconductor module shown in FIG. 1 . FIG. 20 is a cross-sectional view illustrating a manufacturing process for the semiconductor module shown in FIG. 1 . FIG. 21 is a cross-sectional view illustrating a manufacturing process for the semiconductor module shown in FIG. 1 . FIG. 22 is a schematic diagram of a vehicle equipped with the semiconductor module shown in FIG. 1 . FIG. 23 is a plan view of a semiconductor module according to a second embodiment of the present disclosure. FIG. 24 is a partially enlarged view of FIG. 23 . FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 24 . FIG. 26 is a plan view of a semiconductor module according to a third embodiment of the present disclosure. FIG. 27 is a partially enlarged view of FIG. 26 .

[0012] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0013] 1 shows a semiconductor module A10 according to a first embodiment of the present disclosure. The semiconductor module A10 includes three semiconductor devices B, a heat dissipation member 71, a first external connection member 73, and a second external connection member 74.

[0014] First, the three semiconductor devices B included in the semiconductor module A10 will be described with reference to FIGS. 2 to 13. All three semiconductor devices B are identical. Therefore, this description will focus on one of the three semiconductor devices B. The semiconductor device B includes a substrate 11, a first power terminal 12, a second power terminal 13, a third power terminal 14, two fourth power terminals 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a first conductive member 31, a second conductive member 32, and a sealing resin 50. The semiconductor device B further includes a first signal terminal 161, a second signal terminal 162, a third signal terminal 171, a fourth signal terminal 172, two fifth signal terminals 18, a sixth signal terminal 19, a thermistor 23, a first wiring 61, and a second wiring 62. For ease of understanding, FIGS. 3 and 4 show the sealing resin 50 in a see-through manner. 3, the transmitted sealing resin 50 is indicated by an imaginary line (two-dot chain line). For ease of understanding, the sealing resin 50 and the second conductive member 32 are not shown in FIG.

[0015] In the description of the semiconductor module A10 and the semiconductor device B, for convenience, the normal direction to the top surface 51 of the sealing resin 50 (described later) will be referred to as the "first direction z." The direction perpendicular to the first direction z will be referred to as the "second direction x." The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0016] Semiconductor device B converts DC power input to first power terminal 12, second power terminal 13, and third power terminal 14 into AC power using a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The converted AC power is input from each of two fourth power terminals 15 to a power supply target such as a motor.

[0017] As shown in FIGS. 9 , 12 , and 13 , the base material 11 is located on one side of each of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the first direction z. In the semiconductor device B, the base material 11 is formed, for example, by active metal brazing (AMB). As shown in FIG. 9 , the base material 11 includes an insulating layer 111, a first conductive layer 112, a second conductive layer 113, and a heat dissipation layer 114. The base material 11 is covered with a sealing resin 50 except for a portion of the heat dissipation layer 114.

[0018] As shown in FIG. 9 , the insulating layer 111 includes a portion interposed between the heat dissipation layer 114 and the first and second conductive layers 112 and 113 in the first direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. For example, the insulating layer 111 is made of ceramics containing aluminum nitride (AlN). The dimension of the insulating layer 111 in the first direction z is smaller than the dimensions of each of the first and second conductive layers 112 and 113 in the first direction z.

[0019] As shown in FIGS. 9 , 12 , and 13 , in the first direction z, the first conductive layer 112 is located between the insulating layer 111 and each of the multiple first semiconductor elements 21, and the second conductive layer 113 is located between the insulating layer 111 and each of the multiple second semiconductor elements 22. The first conductive layer 112 and the second conductive layer 113 are bonded to the insulating layer 111. The first conductive layer 112 and the second conductive layer 113 contain copper (Cu). The first conductive layer 112 and the second conductive layer 113 are spaced apart from each other in the second direction x. As shown in FIGS. 9 and 12 , the first conductive layer 112 has a first mounting surface 112A facing the first direction z. The first mounting surface 112A faces the multiple first semiconductor elements 21. 9 and 13 , the second conductive layer 113 has a second mounting surface 113A that faces the same side as the first mounting surface 112A in the first direction z. The second mounting surface 113A faces the plurality of second semiconductor elements 22. As viewed in the first direction z, each of the first conductive layer 112 and the second conductive layer 113 is located inward from the periphery 111A of the insulating layer 111.

[0020] As shown in Fig. 9 , the heat dissipation layer 114 is located on the opposite side of the insulating layer 111 in the first direction z from the first conductive layer 112 and the second conductive layer 113. As shown in Fig. 6 , the heat dissipation layer 114 is exposed from the sealing resin 50. The heat dissipation layer 114 contains copper. The dimension of the heat dissipation layer 114 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z. As viewed in the first direction z, the heat dissipation layer 114 is located inward from the periphery 111A of the insulating layer 111.

[0021] As shown in FIGS. 5 and 12 , the multiple first semiconductor elements 21 are bonded to the first mounting surface 112A of the first conductive layer 112. The multiple first semiconductor elements 21 are arranged along the third direction y. As shown in FIGS. 5 and 13 , the multiple second semiconductor elements 22 are bonded to the second mounting surface 113A of the second conductive layer 113. The multiple second semiconductor elements 22 are arranged along the third direction y. The multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 may be switching elements such as insulated gate bipolar transistors (IGBTs). Furthermore, the multiple first semiconductor elements 21 may include multiple switching elements and multiple freewheeling diodes individually connected in parallel to these switching elements. Similarly, the second semiconductor elements 22 may also include a plurality of switching elements and a plurality of freewheeling diodes individually connected in parallel to the switching elements. The freewheeling diodes may be, for example, Schottky barrier diodes. In the description of the semiconductor device B, the first semiconductor elements 21 and the second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The first semiconductor elements 21 and the second semiconductor elements 22 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC).

[0022] As shown in FIGS. 5 and 10, each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 , a first gate electrode 213 and a first detection electrode 214 .

[0023] 10 , the first electrode 211 faces the first mounting surface 112A of the first conductive layer 112. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the drain electrode of the first semiconductor element 21. The first electrode 211 is conductively bonded to the first mounting surface 112A via a conductive bonding layer 29. As a result, the first electrode 211 of each of the multiple first semiconductor elements 21 is electrically connected to the first conductive layer 112. The conductive bonding layer 29 is a sintered body of metal particles containing silver (Ag) or the like. Alternatively, the conductive bonding layer 29 may be solder.

[0024] 10 , the second electrode 212 is located on the opposite side of the first conductive layer 112 from the side facing the first mounting surface 112A in the first direction z. Therefore, the first electrode 211 and the second electrode 212 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the source electrode of the first semiconductor element 21.

[0025] 5, the first gate electrode 213 is located on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 5, the area of ​​the first gate electrode 213 is smaller than the area of ​​the second electrode 212 when viewed in the first direction z.

[0026] 5 , the first detection electrode 214 is located on the same side as the second electrode 212 and the first gate electrode 213 in the first direction z. The first detection electrode 214 is located adjacent to the first gate electrode 213 in the third direction y. A voltage equivalent to the voltage applied to the second electrode 212 is applied to the first detection electrode 214. When viewed in the first direction z, the area of ​​the first detection electrode 214 is approximately equal to the area of ​​the first gate electrode 213.

[0027] As shown in FIGS. 5 and 11 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 , a second gate electrode 223 and a second detection electrode 224 .

[0028] 11 , the third electrode 221 faces the second mounting surface 113A of the second conductive layer 113. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 corresponds to the drain electrode of the second semiconductor element 22. The third electrode 221 is conductively bonded to the second mounting surface 113A via the conductive bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the second conductive layer 113.

[0029] 11 , the fourth electrode 222 is located on the opposite side of the second conductive layer 113 from the side facing the second mounting surface 113A in the first direction z. Therefore, the third electrode 221 and the fourth electrode 222 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 corresponds to the source electrode of the second semiconductor element 22.

[0030] 5, the second gate electrode 223 is located on the same side as the fourth electrode 222 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. As shown in FIG. 5, the area of ​​the second gate electrode 223 is smaller than the area of ​​the fourth electrode 222 when viewed in the first direction z.

[0031] 5 , the second detection electrode 224 is located on the same side as the fourth electrode 222 and the second gate electrode 223 in the first direction z. The second detection electrode 224 is located on both sides of the second gate electrode 223 in the third direction y. A voltage equivalent to the voltage applied to the fourth electrode 222 is applied to the second detection electrode 224. When viewed in the first direction z, the area of ​​the second detection electrode 224 is approximately equal to the area of ​​the second gate electrode 223.

[0032] As shown in FIGS. 5 and 9 , the first power terminal 12 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The first power terminal 12 is conductively bonded to the first conductive layer 112. This electrically connects the first power terminal 12 to the first electrodes 211 of the first semiconductor elements 21 via the first conductive layer 112. The first power terminal 12 is a P terminal (positive electrode) to which DC power to be converted is input. The first power terminal 12 extends from the first conductive layer 112 in the second direction x. The first power terminal 12 has a first covering portion 121 and a first exposed portion 122. As shown in FIG. 9 , the first covering portion 121 is conductively bonded to the first conductive layer 112 and is covered with sealing resin 50. The first exposed portion 122 extends from the first covering portion 121 in the second direction x and protrudes from the sealing resin 50.

[0033] As shown in FIG. 5 , the second power terminal 13 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The second power terminal 13 is located on one side of the first power terminal 12 in the third direction y. The second power terminal 13 is electrically connected to the fourth electrodes 222 of the second semiconductor elements 22. The second power terminal 13 is an N terminal (negative electrode) to which DC power to be converted is input. The second power terminal 13 has a second covering portion 131 and a second exposed portion 132. The second covering portion 131 is spaced apart from the first conductive layer 112 and is covered with the sealing resin 50. The second exposed portion 132 extends from the second covering portion 131 in the second direction x and protrudes from the sealing resin 50.

[0034] As shown in FIG. 5 , the third power terminal 14 is located on the opposite side of the second semiconductor elements 22 from the multiple first semiconductor elements 21 in the second direction x. The third power terminal 14 is located on the opposite side of the second power terminal 13 from the first power terminal 12 in the third direction y. Therefore, the first power terminal 12 is located between the second power terminal 13 and the third power terminal 14 in the third direction y. The third power terminal 14 is electrically connected to the fourth electrodes 222 of each of the multiple second semiconductor elements 22. Like the second power terminal 13, the third power terminal 14 is the N terminal described above. The third power terminal 14 has a third covering portion 141 and a third exposed portion 142. The third covering portion 141 is spaced apart from the first conductive layer 112 and is covered by the sealing resin 50. The third exposed portion 142 extends from the third covering portion 141 in the second direction x and protrudes from the sealing resin 50.

[0035] As shown in FIG. 5 , each of the two fourth power terminals 15 is located on the opposite side of the first conductive layer 112 from the second conductive layer 113 in the second direction x. As shown in FIG. 9 , each of the two fourth power terminals 15 is conductively bonded to the second conductive layer 113. As a result, each of the two fourth power terminals 15 is electrically connected to the third electrodes 221 of the multiple second semiconductor elements 22 via the second conductive layer 113. AC power converted by the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 is output from each of the two fourth power terminals 15. In the semiconductor device B, the two fourth power terminals 15 are spaced apart from each other in the third direction y. As shown in FIG. 3 , each of the two fourth power terminals 15 has a fourth covering portion 151 and a fourth exposed portion 152. The fourth covering portion 151 is conductively bonded to the second conductive layer 113 and is covered with the sealing resin 50. The fourth exposed portion 152 extends from the fourth covered portion 151 in the second direction x and protrudes from the sealing resin 50 .

[0036] As shown in Fig. 9 , the first wiring 61 is bonded to the first mounting surface 112A of the first conductive layer 112. The first wiring 61 is located on the opposite side of the plurality of second semiconductor elements 22 with respect to the plurality of first semiconductor elements 21 in the second direction x. The first wiring 61 is electrically connected to the plurality of first semiconductor elements 21 and the first conductive layer 112. As shown in Figs. 4 and 9 , the first wiring 61 has a first mounting layer 611, a first metal layer 612, two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616.

[0037] 4 , the first mounting layer 611 mounts two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616. The first mounting layer 611 is an insulator. The first mounting layer 611 is made of, for example, ceramics. Alternatively, the first mounting layer 611 may be made of an insulating resin sheet.

[0038] 9 , the first metal layer 612 is located on a side of the first conductive layer 112 facing the first mounting surface 112A with respect to the first mounting layer 611 in the first direction z. The first metal layer 612 is bonded to the first mounting layer 611. The first metal layer 612 contains copper. The first metal layer 612 is bonded to the first mounting surface 112A via a first bonding layer 68. The first bonding layer 68 is, for example, solder.

[0039] As shown in FIGS. 4 and 9 , the two first gate wiring layers 613 are located on the opposite side of the first mounting layer 611 from the first metal layer 612. The two first gate wiring layers 613 are bonded to the first mounting layer 611. Of the two first gate wiring layers 613, one of the first gate wiring layers 613 is conductively bonded to a plurality of first wires 41. The plurality of first wires 41 are individually conductively bonded to the first gate electrodes 213 of the plurality of first semiconductor elements 21. Furthermore, a plurality of sixth wires 46 are conductively bonded to each of the two first gate wiring layers 613. As a result, each of the two first gate wiring layers 613 is electrically connected to the first gate electrodes 213 of the plurality of first semiconductor elements 21.

[0040] 4 and 9 , the first detection wiring layer 614 is located on the opposite side of the first mounting layer 611 from the first metal layer 612. The first detection wiring layer 614 is bonded to the first mounting layer 611. A plurality of second wires 42 are conductively bonded to the first detection wiring layer 614. Furthermore, the plurality of second wires 42 are individually conductively bonded to the first detection electrodes 214 of the plurality of first semiconductor elements 21. As a result, the first detection wiring layer 614 is electrically connected to the first detection electrodes 214 of the plurality of first semiconductor elements 21.

[0041] 4 and 9 , the second detection wiring layer 616 is located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The second detection wiring layer 616 is bonded to the first mounting layer 611. A third wire 43 is conductively bonded to the second detection wiring layer 616. The third wire 43 is further conductively bonded to the first mounting surface 112A of the first conductive layer 112. This provides electrical continuity between the second detection wiring layer 616 and the first conductive layer 112.

[0042] 9 , the second wiring 62 is bonded to the second mounting surface 113A of the second conductive layer 113. The second wiring 62 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The second wiring 62 is electrically connected to the second semiconductor elements 22 and the second conductive layer 113. As shown in FIGS. 4 and 9 , the second wiring 62 has a second mounting layer 621, a second metal layer 622, two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625.

[0043] As shown in Fig. 4, the second mounting layer 621 mounts two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625. The second mounting layer 621 is an insulator. The second mounting layer 621 is made of, for example, ceramics. Alternatively, the second mounting layer 621 may be made of an insulating resin sheet.

[0044] 9 , the second metal layer 622 is located on the side facing the second mounting surface 113A of the second conductive layer 113 with the second mounting layer 621 as the reference in the first direction z. The second metal layer 622 is bonded to the second mounting layer 621. The second metal layer 622 contains copper. The second metal layer 622 is bonded to the second mounting surface 113A via the first bonding layer 68.

[0045] As shown in FIGS. 4 and 9 , the two second gate wiring layers 623 are located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The two second gate wiring layers 623 are bonded to the second mounting layer 621. A plurality of fourth wires 44 are conductively bonded to one of the two second gate wiring layers 623. The plurality of fourth wires 44 are individually conductively bonded to the second gate electrodes 223 of the second semiconductor elements 22. Furthermore, a plurality of seventh wires 47 are conductively bonded to each of the two second gate wiring layers 623. As a result, each of the two second gate wiring layers 623 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22.

[0046] 4 and 9 , the third detection wiring layer 624 is located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The third detection wiring layer 624 is bonded to the second mounting layer 621. A plurality of fifth wires 45 are conductively bonded to the third detection wiring layer 624. Furthermore, the plurality of fifth wires 45 are individually conductively bonded to the second detection electrodes 224 of the plurality of second semiconductor elements 22. As a result, the third detection wiring layer 624 is electrically connected to the second detection electrodes 224 of the plurality of second semiconductor elements 22.

[0047] 4 and 9 , the two temperature detection wiring layers 625 are located on the opposite side of the second mounting layer 621 from the second metal layer 622. The two temperature detection wiring layers 625 are bonded to the second mounting layer 621. The two temperature detection wiring layers 625 are adjacent to each other in a direction perpendicular to the first direction z.

[0048] 9 , each of the multiple sleeves 63 is conductively bonded to either the first wiring 61 or the second wiring 62 via a second bonding layer 69. The second bonding layer 69 is, for example, solder. The multiple sleeves 63 are made of a conductive material such as metal. Each of the multiple sleeves 63 has a cylindrical shape extending in the first direction z.

[0049] 4, the thermistor 23 is conductively joined to the two temperature detection wiring layers 625 of the second wiring 62. The thermistor 23 is used as a temperature detection sensor for the semiconductor device B.

[0050] As shown in FIG. 1 , the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the two fifth signal terminals 18, and the sixth signal terminal 19 are formed as metal pins extending in the first direction z. These terminals protrude from a top surface 51 of a sealing resin 50 (described later). Furthermore, these terminals are individually press-fitted into a plurality of sleeves 63. As a result, each of these terminals is supported by one of the plurality of sleeves 63 and is electrically connected to one of the first wiring 61 and the second wiring 62.

[0051] 4 , the first signal terminal 161 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two first gate wiring layers 613 of the first wiring 61. As a result, the first signal terminal 161 is electrically connected to the first gate electrodes 213 of the multiple first semiconductor elements 21 via the two first gate wiring layers 613. A gate voltage for driving the multiple first semiconductor elements 21 is applied to the first signal terminal 161.

[0052] 4 , the second signal terminal 162 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two second gate wiring layers 623 of the second wiring 62. As a result, the second signal terminal 162 is electrically connected to the second gate electrodes 223 of the multiple second semiconductor elements 22 via the two second gate wiring layers 623. A gate voltage for driving the multiple second semiconductor elements 22 is applied to the second signal terminal 162.

[0053] As shown in Fig. 2 , the third signal terminal 171 is located adjacent to the first signal terminal 161 in the third direction y. As shown in Fig. 4 and 9 , the third signal terminal 171 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the first detection wiring layer 614 of the first wiring 61. This allows the third signal terminal 171 to be electrically connected to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 via the first detection wiring layer 614. A voltage equivalent to the voltage applied to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 is applied to the third signal terminal 171.

[0054] As shown in Fig. 2 , the fourth signal terminal 172 is located adjacent to the second signal terminal 162 in the third direction y. As shown in Figs. 4 and 9 , the fourth signal terminal 172 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the third detection wiring layer 624 of the second wiring 62. This allows the fourth signal terminal 172 to be electrically connected to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 via the third detection wiring layer 624. A voltage equivalent to the voltage applied to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 is applied to the fourth signal terminal 172.

[0055] As shown in Fig. 2 , the two fifth signal terminals 18 are located on the opposite side of the second signal terminal 162 from the fourth signal terminal 172 in the third direction y. The two fifth signal terminals 18 are adjacent to each other in the third direction y. As shown in Fig. 4 , the two fifth signal terminals 18 are individually press-fitted into two of the multiple sleeves 63 that are individually conductively joined to the two temperature detection wiring layers 625 of the second wiring 62. As a result, the two fifth signal terminals 18 are electrically connected to the thermistor 23.

[0056] As shown in Fig. 2 , the sixth signal terminal 19 is located on the opposite side of the first signal terminal 161 in the third direction y with respect to the third signal terminal 171. As shown in Fig. 4 , the sixth signal terminal 19 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the second detection wiring layer 616 of the first wiring 61. This provides electrical continuity between the sixth signal terminal 19 and the first conductive layer 112 via the second detection wiring layer 616. A voltage equivalent to the DC power input to the first power terminal 12 and the two second power terminals 13 is applied to the sixth signal terminal 19.

[0057] As shown in FIGS. 5 and 10 , the first conductive member 31 is conductively bonded to the second electrodes 212 of the multiple first semiconductor elements 21 and the second mounting surface 113A of the second conductive layer 113. This allows the second electrodes 212 of each of the multiple first semiconductor elements 21 to be electrically connected to the second conductive layer 113. The first conductive member 31 contains copper. The first conductive member 31 is a metal clip. As shown in FIG. 5 , the first conductive member 31 has a first main portion 311, multiple first bonding portions 312, multiple first connecting portions 313, multiple second bonding portions 314, and multiple second connecting portions 315.

[0058] The first main portion 311 forms a main portion of the first conductive member 31. As shown in Fig. 5 , the first main portion 311 extends in the third direction y. As shown in Fig. 9 , the first main portion 311 straddles between the first conductive layer 112 and the second conductive layer 113.

[0059] As shown in FIGS. 5 and 10 , each of the plurality of first bonding portions 312 is conductively bonded to the second electrode 212 of one of the plurality of first semiconductor elements 21 .

[0060] 5, the plurality of first connecting portions 313 are connected to the first main portion 311 and the plurality of first joint portions 312. The plurality of first connecting portions 313 are spaced apart from one another in the third direction y. As shown in Fig. 10, when viewed in the third direction y, the plurality of first connecting portions 313 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they extend from the plurality of first joint portions 312 toward the first main portion 311.

[0061] 5 and 9, the plurality of second bonding portions 314 are conductively bonded to the second mounting surface 113A of the second conductive layer 113. The second bonding portions 314 are arranged along the third direction y.

[0062] 5 and 9 , one side of each of the plurality of second connecting portions 315 in the second direction x is connected to the first main portion 311. In addition, the other side of each of the plurality of second connecting portions 315 in the second direction x is individually connected to the plurality of second joint portions 314. When viewed in the third direction y, the second connecting portion 315 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it extends from the second joint portion 314 toward the first main portion 311.

[0063] 10 , a conductive bonding layer 29 is located between the second electrode 212 of each of the multiple first semiconductor elements 21 and each of the multiple first bonding portions 312. The conductive bonding layer 29 conductively bonds one of the multiple first bonding portions 312 to one of the multiple first semiconductor elements 21. As shown in FIG. 9 , the conductive bonding layer 29 is located between the second mounting surface 113A of the second conductive layer 113 and each of the multiple second bonding portions 314. The conductive bonding layer 29 conductively bonds the second mounting surface 113A to the multiple second bonding portions 314.

[0064] As shown in FIG. 11 , the second conductive member 32 is conductively bonded to the second electrodes 212 of the plurality of second semiconductor elements 22 and the second covering portions 131 of the two second power terminals 13. As a result, the second electrodes 212 of each of the plurality of second semiconductor elements 22 are electrically connected to the two second power terminals 13. The second conductive member 32 contains copper. The second conductive member 32 is a metal clip. As shown in FIG. 4 , the second conductive member 32 has two second main portions 321, a plurality of third joint portions 322, a plurality of third connecting portions 323, two fourth joint portions 324, two fourth connecting portions 325, a plurality of intermediate portions 326, and a cross beam portion 327.

[0065] As shown in Fig. 4 , the two second main portions 321 are spaced apart from each other in the third direction y. The two second main portions 321 extend in the second direction x. As shown in Fig. 9 , the two second main portions 321 are located on the opposite side of the first conductive layer 112 and the second conductive layer 113 from the first conductive member 31 in the first direction z.

[0066] 4, the intermediate portions 326 are located between two second main portions 321 in the third direction y. The intermediate portions 326 are arranged along the third direction y. Each of the intermediate portions 326 extends in the second direction x.

[0067] As shown in FIGS. 4 and 11 , each of the plurality of third bonding portions 322 is conductively bonded to the second electrode 212 of one of the plurality of second semiconductor elements 22 .

[0068] 4 , one side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the plurality of third joint portions 322. In addition, the other side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the two second main portions 321 and one of the plurality of intermediate portions 326. When viewed in the second direction x, each of the plurality of third connecting portions 323 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it moves from one of the plurality of third joint portions 322 toward one of the two second main portions 321 and one of the plurality of intermediate portions 326.

[0069] As shown in FIG. 4 , the two fourth joint portions 324 are conductively joined to the second covering portion 131 of the second power terminal 13 and the third covering portion 141 of the third power terminal 14 , respectively.

[0070] 4 , one side of each of the two fourth connecting portions 325 in the second direction x is connected to two fourth joint portions 324. In addition, the other side of each of the two fourth connecting portions 325 in the second direction x is individually connected to two second main portions 321. When viewed in the third direction y, the two fourth connecting portions 325 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they move from the two fourth joint portions 324 toward the two second main portions 321.

[0071] 4 , the cross beam portion 327 is located between the two second main portions 321 in the third direction y. The cross beam portion 327 extends in the third direction y. Both sides of the cross beam portion 327 in the third direction y are connected to the two second main portions 321. When viewed in the first direction z, the cross beam portion 327 overlaps the first conductive member 31. A plurality of intermediate portions 326 are connected to the side of the cross beam portion 327 in the second direction x where the plurality of second semiconductor elements 22 are located.

[0072] 11 , the conductive bonding layer 29 is located between the fourth electrode 222 of each of the second semiconductor elements 22 and each of the third bonding portions 322. The conductive bonding layer 29 conductively bonds one of the third bonding portions 322 to one of the second semiconductor elements 22.

[0073] As shown in FIGS. 9 , 12 , and 13 , the sealing resin 50 covers the insulating layer 111, the first conductive layer 112, the second conductive layer 113, the plurality of first semiconductor elements 21, the plurality of second semiconductor elements 22, the first conductive member 31, and the second conductive member 32. The sealing resin 50 also covers a portion of the heat dissipation layer 114, the first power terminal 12, the second power terminal 13, the third power terminal 14, and the two fourth power terminals 15. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. As shown in FIGS. 2 and 6 to 8 , the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two recesses 55.

[0074] 9 , the top surface 51 faces the same side as the first mounting surface 112A of the first conductive layer 112 in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. As shown in FIG. 6 , the heat dissipation layer 114 of the base material 11 is exposed from the bottom surface 52.

[0075] 2 and 6 to 8 , the first side surface 53 and the second side surface 54 are spaced apart from each other in the second direction x. The first side surface 53 and the second side surface 54 face opposite each other in the second direction x. A first exposed portion 122 of the first power terminal 12, a second exposed portion 132 of the second power terminal 13, and a third exposed portion 142 of the third power terminal 14 protrude from the first side surface 53. A fourth exposed portion 152 of each of the two fourth power terminals 15 protrudes from the second side surface 54.

[0076] 2 and 6 , the two recesses 55 are recessed from the first side surface 53 in the second direction x. The two recesses 55 extend from the top surface 51 to the bottom surface 52 in the first direction z. The two recesses 55 are located on both sides of the first power terminal 12 in the third direction y.

[0077] Next, the semiconductor module A10 will be described with reference to Figures 14 to 17. The semiconductor module A10 includes three semiconductor devices B, a heat dissipation member 71, a first external connection member 73, and a second external connection member 74, as well as a bus bar 81 shown in Figure 14 and a control board 82 shown in Figure 17.

[0078] The heat dissipation member 71 serves to cool the three semiconductor devices B. The heat dissipation member 71 contains metal. The heat dissipation member 71 is made of a material containing, for example, aluminum (Al). The three semiconductor devices B are mounted on the heat dissipation member 71 as shown in FIG. 14 . The three semiconductor devices B are arranged along the third direction y.

[0079] As shown in FIG. 17 , the heat dissipation member 71 has a base 711 and a heat dissipation portion 712. The base 711 is located on one side of the three semiconductor devices B in the first direction z. The base 711 is flat. The base 711 has a support surface 711A facing the bottom surface 52 of the sealing resin 50 of each of the three semiconductor devices B. The heat dissipation layer 114 of each of the three semiconductor devices B is bonded to the support surface 711A via a bonding layer 72. The bonding layer 72 includes a sintered body of metal particles. The metal particles include silver. Alternatively, the metal particles may include copper. Furthermore, the bonding layer 72 may be a thermal interface material (TIM) containing resin. The heat dissipation portion 712 is located on the opposite side of the base 711 from the three semiconductor devices B in the first direction z. The heat dissipation portion 712 is connected to the base 711. In the semiconductor module A10, the heat dissipation portion 712 is a plurality of pins each extending in the first direction z. Alternatively, the heat dissipation portion 712 may be a plurality of fins each extending in a direction perpendicular to the first direction z.

[0080] 14 , the first external connection member 73 is located on the same side in the second direction x as the first power terminal 12, the second power terminal 13, and the third power terminal 14 of each of the three semiconductor devices B, with the sealing resin 50 of each of the three semiconductor devices B as a reference. The first external connection member 73 is electrically connected to the first power terminal 12, the second power terminal 13, and the third power terminal 14 of each of the three semiconductor devices B.

[0081] As shown in FIG. 14 , the first external connection member 73 has a first housing portion 731 , three first conductive portions 732 , three second conductive portions 733 , a plurality of first support portions 734 , and a first positioning portion 735 .

[0082] 14 and 17 , the first housing part 731 is disposed on the support surface 711A of the heat dissipation member 71. Therefore, when viewed in the first direction z, the first housing part 731 overlaps the heat dissipation member 71. The first housing part 731 is an insulator containing resin. The first housing part 731 is joined to the support surface 711A with a fastening member or the like.

[0083] 14 , 15 , and 17 , the three first conductive portions 732 are supported by the first housing portion 731. The first exposed portion 122 of the first power terminal 12 of each of the three semiconductor devices B is individually conductively joined to the three first conductive portions 732. The first power terminal 12 of each of the three semiconductor devices B is located on the opposite side of the heat dissipation member 71 in the first direction z with respect to the three first conductive portions 732. The three first conductive portions 732 contain copper.

[0084] As shown in FIGS. 16 and 17 , each of the three first conductive portions 732 includes a first housing portion 732A and a first connecting portion 732B. The first housing portion 732A is housed in the first housing portion 731. The first exposed portion 122 of the first power terminal 12 of one of the three semiconductor devices B is conductively joined to the first housing portion 732A. When viewed in the first direction z, the first exposed portion 122 of one of the three semiconductor devices B overlaps the first housing portion 732A. The first connecting portion 732B is connected to the first housing portion 732A and protrudes from the first housing portion 731 in the second direction x. The first connecting portion 732B is located on the opposite side of the first housing portion 732A from the multiple first semiconductor elements 21 in the second direction x. The dimension of the first connecting portion 732B in the third direction y is greater than the dimension of the first exposed portion 122 of each of the three semiconductor devices B in the third direction y. The dimension in the first direction z of the first connection portion 732B is larger than the dimension in the first direction z of the first exposed portion 122 of each of the three semiconductor devices B. When viewed in the first direction z, the first connection portion 732B is located outward from the heat dissipation member 71.

[0085] 14 , 15 , and 17 , the three second conductive portions 733 are supported by the first housing portion 731. The second exposed portion 132 of the second power terminal 13 and the third exposed portion 142 of the third power terminal 14 of each of the three semiconductor devices B are individually conductively joined to the three second conductive portions 733. The second power terminal 13 and the third power terminal 14 of each of the three semiconductor devices B are located on the opposite side of the heat dissipation member 71 from the three second conductive portions 733 in the first direction z. The three second conductive portions 733 contain copper.

[0086] 16 and 17 , each of the three second conductive portions 733 includes a second housing portion 733A and a second connecting portion 733B. The second housing portion 733A is housed in the first housing portion 731. The second exposed portion 132 of the second power terminal 13 and the third exposed portion 142 of the third power terminal 14 of one of the three semiconductor devices B are conductively joined to the second housing portion 733A. When viewed in the first direction z, each of the second exposed portion 132 and the third exposed portion 142 of one of the three semiconductor devices B overlaps the second housing portion 733A. The second connecting portion 733B is connected to the second housing portion 733A and protrudes from the first housing portion 731 in the second direction x. The second connecting portion 733B is located on the opposite side of the second housing portion 733A from the multiple first semiconductor elements 21 in the second direction x. The dimension of the second connection portion 733B in the third direction y is larger than the dimension of the second exposed portion 132 of each of the three semiconductor devices B in the third direction y. The dimension of the second connection portion 733B in the first direction z is larger than the dimension of the second exposed portion 132 of each of the three semiconductor devices B in the first direction z. When viewed in the first direction z, the second connection portion 733B is located outward from the heat dissipation member 71. The second connection portion 733B is located next to the first connection portion 732B of any one of the three first conductive portions 732 in the second direction x. The second connection portion 733B is located on the opposite side of the heat dissipation member 71 in the first direction z, with the first connection portion 732B of each of the three first conductive portions 732 as a reference.

[0087] 16 and 17 , as viewed in the first direction z, the second accommodating portion 733A of each of the three second conductive portions 733 individually overlaps the first accommodating portion 732A of each of the three first conductive portions 732. As shown in Fig. 17 , in the first direction z, a portion of the first housing portion 731 is located between the heat dissipation member 71 and each of the three first conductive portions 732 and three second conductive portions 733.

[0088] 14 , the bus bar 81 is connected to the first connection portion 732B of each of the three first conductive portions 732 and the second connection portion 733B of each of the three second conductive portions 733. In the semiconductor module A10, DC power is input to the first power terminal 12, the second power terminal 13, and the third power terminal 14 of each of the three semiconductor devices B via the bus bar 81. The bus bar 81 includes a capacitor.

[0089] As shown in FIGS. 14 , 15 , and 17 , the multiple first support portions 734 are located on the opposite side of the heat dissipation member 71 from the first housing portion 731 in the first direction z. The multiple first support portions 734 are arranged along the third direction y. Each of the multiple first support portions 734 protrudes from the first housing portion 731 in the first direction z. The control board 82 is supported by the multiple first support portions 734. Here, the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the two fifth signal terminals 18, and the sixth signal terminal 19 of each of the multiple semiconductor devices B are connected to the control board 82. In the semiconductor module A10, the control board 82 is used to control the three semiconductor devices B.

[0090] 14 , 15 , and 17 , the first positioning portion 735 is located on the opposite side of the heat dissipation member 71 in the first direction z with the first housing portion 731 as a reference. The first positioning portion 735 protrudes from the first housing portion 731 in the first direction z. The first positioning portion 735 includes a portion that protrudes in the first direction z further than each of the multiple first support portions 734. As a result, the first positioning portion 735 penetrates the control board 82 in the first direction z. In the semiconductor module A10, the first positioning portion 735 is used to position the control board 82 with respect to the three semiconductor devices B.

[0091] 15 , the first housing portion 731 is provided with a first recess 736 and a second recess 737. Each of the first recess 736 and the second recess 737 penetrates in the first direction z and opens from one side in the second direction x. The first recess 736 is located between the first exposed portion 122 of the first power terminal 12 of any of the three semiconductor devices B and the second exposed portion 132 of the second power terminal 13. The second recess 737 is located between the first exposed portion 122 of any of the three semiconductor devices B and the third exposed portion 142 of the third power terminal 14. The first recess 736 and the second recess 737 individually face two recesses 55 of the sealing resin 50 of any of the three semiconductor devices B.

[0092] 14 , the second external connection member 74 is located on the opposite side of the first external connection member 73 in the second direction x with respect to the sealing resin 50 of each of the three semiconductor devices B. The second external connection member 74 is electrically connected to the two fourth power terminals 15 of each of the three semiconductor devices B.

[0093] As shown in FIG. 14 , the second external connection member 74 has a second housing portion 741 , three third conductive portions 742 , a plurality of second support portions 744 , and a second positioning portion 745 .

[0094] 14 and 17 , the second housing part 741 is disposed on the support surface 711A of the heat dissipation member 71. Therefore, when viewed in the first direction z, the second housing part 741 overlaps the heat dissipation member 71. The second housing part 741 is an insulator containing resin. The second housing part 741 is joined to the support surface 711A with a fastening member or the like.

[0095] 14 , 15 , and 17 , the three third conductive portions 742 are supported by the second housing portion 741. The fourth exposed portions 152 of the two fourth power terminals 15 of each of the three semiconductor devices B are individually conductively joined to the three third conductive portions 742. The two fourth power terminals 15 of each of the three semiconductor devices B are located on the opposite side of the heat dissipation member 71 from the three third conductive portions 742 in the first direction z. The three third conductive portions 742 contain copper.

[0096] As shown in FIGS. 15 to 17 , each of the three third conductive portions 742 has a third housing portion 742A and a third connecting portion 742B. The third housing portion 742A is housed in the second housing portion 741. The fourth exposed portions 152 of each of two fourth power terminals 15 of any of the three semiconductor devices B are conductively joined to the third housing portion 742A. When viewed in the first direction z, the fourth exposed portion 152 of any of the three semiconductor devices B overlaps the third housing portion 742A. The third connecting portion 742B is connected to the third housing portion 742A and protrudes from the second housing portion 741 in the second direction x. The third connecting portion 742B is located on the opposite side of the third housing portion 742A from the multiple second semiconductor elements 22 in the second direction x. The dimension of the third connecting portion 742B in the third direction y is larger than the dimension of the fourth exposed portions 152 of each of the three semiconductor devices B in the third direction y. The dimension in the first direction z of the third connection portion 742B is greater than the dimension in the first direction z of the fourth exposed portion 152 of each of the three semiconductor devices B. When viewed in the first direction z, the third connection portion 742B is located outward from the heat dissipation member 71.

[0097] As shown in FIG. 17 , a portion of the second housing portion 741 is located between the heat dissipation member 71 and the three third conductive portions 742 in the first direction z.

[0098] 14 , 15 , and 17 , the multiple second support portions 744 are located on the opposite side of the heat dissipation member 71 from the second housing portion 741 in the first direction z. The multiple second support portions 744 are arranged along the third direction y. Each of the multiple second support portions 744 protrudes from the second housing portion 741 in the first direction z. The control board 82 is supported by the multiple second support portions 744.

[0099] 14 and 15 , the second positioning portion 745 is located on the opposite side of the heat dissipation member 71 in the first direction z with the second housing portion 741 as a reference. The second positioning portion 745 protrudes from the second housing portion 741 in the first direction z. The second positioning portion 745 includes a portion that protrudes in the first direction z further than each of the multiple second support portions 744. As a result, the second positioning portion 745 penetrates the control board 82 in the first direction z. In the semiconductor module A10, the second positioning portion 745 is used to position the control board 82 with respect to the three semiconductor devices B.

[0100] Next, a first embodiment of a method for manufacturing the semiconductor module A10 will be described with reference to Figures 18 and 19. Here, the cross-sectional positions in Figures 18 and 19 correspond to the cross-sectional positions in Figure 17.

[0101] 18 is performed. In the first step S1, the heat dissipation layer 114 of each of the three semiconductor devices B is bonded to the support surface 711A of the heat dissipation member 71 via the bonding layer 72.

[0102] Next, the second step S2 shown in FIG. 19 is performed. That is, in this embodiment, the second step S2 is a step subsequent to the first step S1. In the second step S2, the first external connection member 73 and the second external connection member 74 are each placed on the support surface 711A of the heat dissipation member 71. Thereafter, in the second step S2, the first exposed portion 122 of the first power terminal 12 of each of the three semiconductor devices B is individually conductively joined to the three first conductive portions 732 of the first external connection member 73. The second exposed portion 132 of the second power terminal 13 and the third exposed portion 142 of the third power terminal 14 of each of the three semiconductor devices B are individually conductively joined to the three second conductive portions 733 of the first external connection member 73. Furthermore, the fourth exposed portions 152 of the two fourth power terminals 15 of each of the three semiconductor devices B are individually conductively joined to the three third conductive portions 742 of the second external connection member 74. These conductive connections can be made by laser welding, for example, to obtain the semiconductor module A10.

[0103] Next, a second embodiment of the method for manufacturing the semiconductor module A10 will be described with reference to Figures 20 and 21. The cross-sectional positions in Figures 20 and 21 correspond to the cross-sectional positions in Figure 17.

[0104] 20 is performed. In the second step S2 of this embodiment, the first housing portion 731 of the first external connection member 73 and the second housing portion 741 of the second external connection member 74 can each be bonded to the support surface 711A of the heat dissipation member 71 via an adhesive layer 75. The adhesive layer 75 contains, for example, an epoxy resin.

[0105] Next, the first step S1 shown in FIG. 21 is performed. That is, in this embodiment, the first step S1 is a step subsequent to the second step S2. Here, in this embodiment, it is preferable to use a thermally conductive material (TIM) containing resin for the bonding layer 72 rather than a material containing sintered metal. Thereafter, in the first step S1, the first exposed portion 122 of the first power terminal 12 of each of the three semiconductor devices B is conductively bonded individually to the three first conductive portions 732 of the first external connection member 73. The second exposed portion 132 of the second power terminal 13 and the third exposed portion 142 of the third power terminal 14 of each of the three semiconductor devices B are conductively bonded individually to the three second conductive portions 733 of the first external connection member 73. Furthermore, the fourth exposed portions 152 of the two fourth power terminals 15 of each of the three semiconductor devices B are conductively bonded individually to the three third conductive portions 742 of the second external connection member 74. This completes the semiconductor module A10.

[0106] Next, a vehicle C equipped with the semiconductor module A10 will be described with reference to Fig. 22. The vehicle C is, for example, an electric vehicle (EV).

[0107] As shown in Fig. 22, vehicle C includes an on-board charger 91, a storage battery 92, and a drive system 93. Power is supplied to the on-board charger 91 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 91 via a wired connection. The on-board charger 91 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600 V.

[0108] The drive system 93 drives the vehicle C. The drive system 93 includes an inverter 931 and a drive source 932. The semiconductor module A10 constitutes part of the inverter 931. Power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. Alternatively, unlike the power system shown in FIG. 22 , a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 including the semiconductor module A10 is connected to the drive source 932. The drive source 932 includes an AC motor and a transmission. When the AC power converted by the inverter 931 is supplied to the drive source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle C. This drives the vehicle C. To drive the vehicle C, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. Therefore, the semiconductor module A10 in the inverter 931 is necessary to output AC power whose frequency is appropriately changed to correspond to the required rotation speed of the AC motor.

[0109] Next, the effects of the semiconductor module A10 will be described.

[0110] The semiconductor module A10 includes a heat dissipation member 71, a first semiconductor element 21, a second semiconductor element 22, a first power terminal 12, a second power terminal 13, and a first external connection member 73. The first external connection member 73 has a first housing portion 731, a first conductive portion 732, and a second conductive portion 733. The first power terminal 12 is conductively joined to the first conductive portion 732. The second power terminal 13 is conductively joined to the second conductive portion 733. When viewed in the first direction z, the first housing portion 731 overlaps the heat dissipation member 71. In the first direction z, a portion of the first housing portion 731 is located between the heat dissipation member 71 and each of the first conductive portion 732 and the second conductive portion 733. With this configuration, the heat dissipation member 71 can improve the heat dissipation performance of the semiconductor module A10. Furthermore, the first conductive portion 732 and the second conductive portion 733 improve the degree of freedom regarding the external connection of the first power terminal 12 and the second power terminal 13 (for example, connection to the bus bar 81 shown in FIG. 14 ). Furthermore, the configuration of the first housing portion 731 with respect to the heat dissipation member 71, the first conductive portion 732, and the second conductive portion 733 can suppress a decrease in the dielectric strength voltage of the semiconductor module A10 caused by the first conductive portion 732 and the second conductive portion 733. Therefore, with this configuration, the semiconductor module A10 can improve heat dissipation performance while improving the degree of freedom regarding the external connection of the first power terminal 12 and the second power terminal 13 and suppressing a decrease in the dielectric strength voltage.

[0111] The first conductive part 732 has a first housing part 732A housed in the first housing part 731. The second conductive part 733 has a second housing part 733A housed in the first housing part 731. This configuration effectively prevents a decrease in the withstand voltage of the semiconductor module A10 caused by the first conductive part 732 and the second conductive part 733. In this case, it is preferable that the first housing part 731 contains resin. This makes it easier to mold the first housing part 731 and more effectively prevents a decrease in the withstand voltage of the semiconductor module A10.

[0112] The first power terminal 12 is located on the opposite side of the heat dissipation member 71 in the first direction z with respect to the first conductive portion 732. As viewed in the first direction z, the first power terminal 12 overlaps the first accommodating portion 732A of the first conductive portion 732. With this configuration, the first power terminal 12 can be conductively joined to the first conductive portion 732 without interfering with the heat dissipation member 71.

[0113] The first conductive portion 732 has a first connection portion 732B connected to the first accommodation portion 732A. As viewed in the first direction z, the first connection portion 732B is located outward from the heat dissipation member 71. This configuration further improves the degree of freedom regarding the external connection of the first power terminal 12.

[0114] The second conductive portion 733 has a second connection portion 733B connected to the second accommodation portion 733A. As viewed in the first direction z, the second connection portion 733B is located outward of the heat dissipation member 71. This configuration further improves the degree of freedom regarding the external connection of the second power terminal 13.

[0115] When viewed in the first direction z, the second accommodating portion 733A of the second conductive portion 733 overlaps the first accommodating portion 732A of the first conductive portion 732. This configuration reduces the parasitic inductance of the semiconductor module A10, thereby suppressing surge voltages applied to the first conductive portion 732 and the second conductive portion 733.

[0116] The first external connection member 73 has a first support portion 734 and a first positioning portion 735. The first positioning portion 735 includes a portion that protrudes in the first direction z beyond the first support portion 734. With this configuration, the control board 82 can be positioned relative to the first semiconductor element 21 and the second semiconductor element 22 while the control board 82 is supported by the first support portion 734.

[0117] The semiconductor module A10 further includes a sealing resin 50 that covers the first semiconductor element 21 and the second semiconductor element 22, and a first signal terminal 161 that is electrically connected to the first gate electrode 213 of the first semiconductor element 21. A portion of the first signal terminal 161 protrudes from the top surface 51 of the sealing resin 50. This configuration makes the semiconductor module A10, which includes the control board 82, more compact.

[0118] A first recess 736 is provided in the first housing portion 731. In the second direction x, the first recess 736 is located between the first power terminal 12 and the second power terminal 13. This configuration makes it possible to suppress a decrease in the dielectric strength voltage of the semiconductor module A10 caused by the first power terminal 12 and the second power terminal 13.

[0119] 23 to 25, a semiconductor module A20 according to a second embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B described above are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0120] In the semiconductor module A20, the configurations of the first external connection members 73 and the second external connection members 74 are different from those of the semiconductor module A10.

[0121] As shown in FIGS. 23 to 25 , the first external connection member 73 has a first housing portion 731, three first conductive portions 732, and three second conductive portions 733. The first housing portion 731 has a larger opening on the side opposite to the side facing the heat dissipation member 71 in the first direction z than in the semiconductor module A10. As a result, each of the three first conductive portions 732 is not divided into a first accommodation portion 732A and a first connection portion 732B. Similarly, each of the three second conductive portions 733 is not divided into a second accommodation portion 733A and a second connection portion 733B. As viewed in the first direction z, each of the three first conductive portions 732 includes a portion located outward from the heat dissipation member 71. As viewed in the first direction z, each of the three second conductive portions 733 includes a portion located outward from the heat dissipation member 71.

[0122] 23 to 25, the second external connection member 74 has a second housing portion 741 and three third conductive portions 742. The second housing portion 741 has a larger opening on the side opposite to the side facing the heat dissipation member 71 in the first direction z than in the semiconductor module A10. As a result, each of the three third conductive portions 742 is not divided into a third accommodating portion 742A and a third connecting portion 742B. When viewed in the first direction z, each of the three third conductive portions 742 includes a portion located outward from the heat dissipation member 71.

[0123] Next, the effects of the semiconductor module A20 will be described.

[0124] The semiconductor module A20 includes a heat dissipation member 71, a first semiconductor element 21, a second semiconductor element 22, a first power terminal 12, a second power terminal 13, and a first external connection member 73. The first external connection member 73 has a first housing portion 731, a first conductive portion 732, and a second conductive portion 733. The first power terminal 12 is conductively joined to the first conductive portion 732. The second power terminal 13 is conductively joined to the second conductive portion 733. As viewed in the first direction z, the first housing portion 731 overlaps the heat dissipation member 71. In the first direction z, a portion of the first housing portion 731 is located between the heat dissipation member 71 and each of the first conductive portion 732 and the second conductive portion 733. Therefore, with this configuration, even in the semiconductor module A20, it is possible to improve heat dissipation, increase flexibility in the external connection of the first power terminal 12 and the second power terminal 13, and suppress a decrease in dielectric strength voltage. Furthermore, the semiconductor module A20 has the same configuration as the semiconductor module A10, and thus provides the same effects as the semiconductor module A10.

[0125] 26 and 27, a semiconductor module A30 according to a third embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor module A10 and semiconductor device B described above are designated by the same reference numerals, and redundant description will be omitted.

[0126] The semiconductor module A30 differs from the semiconductor module A10 in that it includes a housing 76 instead of the first external connection member 73 and in the configuration of the second external connection member 74.

[0127] 26 and 27 , the housing 76 is disposed on the support surface 711A of the heat dissipation member 71. Therefore, when viewed in the first direction z, the housing 76 overlaps the heat dissipation member 71. The housing 76 is an insulator containing resin. The housing 76 is joined to the support surface 711A with fastening members or the like. In the first direction z, a portion of the housing 76 is located between the heat dissipation member 71 and each of the first exposed portion 122 of the first power terminal 12, the second exposed portion 132 of the second power terminal 13, and the third exposed portion 142 of the third power terminal 14 of each of the three semiconductor devices B.

[0128] 26 and 27 , the second external connection member 74 has a second housing portion 741 and three third conductive portions 742. The second housing portion 741 has a larger opening on the side opposite to the side facing the heat dissipation member 71 in the first direction z than in the semiconductor module A10. As a result, each of the three third conductive portions 742 is not divided into a third accommodating portion 742A and a third connecting portion 742B. When viewed in the first direction z, each of the three third conductive portions 742 includes a portion located outward from the heat dissipation member 71.

[0129] Next, the effects of the semiconductor module A30 will be described.

[0130] The semiconductor module A30 includes a heat dissipation member 71, a first semiconductor element 21, a second semiconductor element 22, a fourth power terminal 15, and a second external connection member 74. The second external connection member 74 has a second housing portion 741 and a third conductive portion 742. The fourth power terminal 15 is conductively joined to the third conductive portion 742. When viewed in the first direction z, the second housing portion 741 overlaps the heat dissipation member 71. In the first direction z, a portion of the second housing portion 741 is located between the heat dissipation member 71 and the third conductive portion 742. This configuration allows the heat dissipation member 71 to improve the heat dissipation performance of the semiconductor module A30. Furthermore, the third conductive portion 742 improves the degree of freedom regarding the external connection of the fourth power terminal 15 (for example, connection to the drive source 932 shown in FIG. 22 ). Furthermore, the configuration of the second housing part 741 relative to the heat dissipation member 71 and the third conductive part 742 can suppress a decrease in the dielectric strength voltage of the semiconductor module A30 caused by the third conductive part 742. Therefore, with this configuration, the semiconductor module A30 can improve heat dissipation, while also improving the degree of freedom for external connection of the fourth power terminal 15 and suppressing a decrease in the dielectric strength voltage.

[0131] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0132] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A heat dissipation member (71), a first semiconductor element (21) and a second semiconductor element (22) located on one side of the heat dissipation member in a first direction (z), a first power terminal (12) conductive to the first semiconductor element, a second power terminal (13) conductive to the second semiconductor element, and a first external connection member (73) conductive to the first power terminal and the second power terminal, wherein the second semiconductor element is conductive to the first semiconductor element, and the first external connection member has a first conductive part (732) to which the first power terminal is conductively joined, a second conductive part (733) to which the second power terminal is conductively joined, and a first housing part (731) supporting the first conductive part and the second conductive part, and when viewed in the first direction, the first housing part overlaps the heat dissipation member, A semiconductor module (A10) in which, in the first direction, a portion of the first housing portion is located between the heat dissipation member and the first and second conductive portions. Appendix 2. The semiconductor module (A10) according to Appendix 1, in which a portion of each of the first conductive portion (732) and the second conductive portion (733) is housed in the first housing portion (731). Appendix 3. The semiconductor module (A10) according to Appendix 2, in which the first housing portion (731) includes a resin. Appendix 4. The semiconductor module (A10) according to Appendix 3, in which the first power terminal (12) and the second power terminal (13) are located on the opposite side of the second semiconductor element (22) with respect to the first semiconductor element (21) in a second direction (x) orthogonal to the first direction (z), and the second power terminal is located next to the first power terminal in a third direction (y) orthogonal to both the first and second directions.Supplementary Note 5. The semiconductor module (A10) according to Supplementary Note 4, wherein the first conductive portion (732) is accommodated in the first housing portion (731) and includes a first housing portion (732A) to which the first power terminal (12) is conductively joined, and a first connection portion (732B) connected to the first housing portion and protruding from the first housing portion in the second direction (x), the first connection portion being located on the opposite side of the first semiconductor element (21) with respect to the first housing portion in the second direction, and the first connection portion being located outward of the heat dissipation member (71) as viewed in the first direction (z). Supplementary Note 6. The semiconductor module (A10) according to Supplementary Note 5, wherein the dimension of the first connection portion (732B) in the third direction (y) is greater than the dimension of the first power terminal (12) in the third direction. Supplementary Note 7. The semiconductor module (A10) according to Supplementary Note 6, wherein the dimension of the first connection portion (732B) in the first direction (z) is larger than the dimension of the first power terminal (12) in the first direction. Supplementary Note 8. The semiconductor module (A10) according to Supplementary Note 5, wherein the first power terminal (12) is located on the opposite side of the heat dissipation member (71) with respect to the first conductive portion (732) in the first direction (z), and the first power terminal overlaps the first accommodating portion (732A) as viewed in the first direction. Supplementary Note 9. The semiconductor module (A10) according to Supplementary Note 8, further comprising a third power terminal (14) electrically connected to the second semiconductor element (22), and the third power terminal is located on the opposite side of the second semiconductor element with respect to the first semiconductor element (21) in the second direction (x), and the third power terminal is conductively joined to the second conductive portion (733). Supplementary Note 10. A semiconductor module (A10) described in Appendix 9, wherein the first power terminal (12) is located between the second power terminal (13) and the third power terminal (14) in the third direction (y).Supplementary Note 11. The semiconductor module (A10) according to Supplementary Note 10, wherein the second conductive portion (733) is accommodated in the first housing portion (731) and includes a second housing portion (733A) to which the second power terminal (13) and the third power terminal (14) are each conductively joined, and a second connection portion (733B) connected to the second housing portion and protruding from the first housing portion in the second direction (x), the second connection portion is located on the opposite side of the second housing portion from the first semiconductor element (21) in the second direction (x), the second connection portion is located outward of the heat dissipation member (71) as viewed in the first direction (z), and the second housing portion overlaps the first housing portion (732A). Supplementary Note 12. The semiconductor module (A10) according to any one of Supplementary Notes 5 to 12, further comprising: a first conductive layer (112) to which the first semiconductor element (21) is conductively bonded; and a second conductive layer (113) to which the second semiconductor element (22) is conductively bonded; the first conductive layer is located between the heat dissipation member (71) and the first semiconductor element in the first direction (z); and the second conductive layer is located between the heat dissipation member and the second semiconductor element in the first direction. Supplementary Note 14. The semiconductor module (A10) according to Supplementary Note 13, further comprising: an insulating layer (111) located between the heat dissipation member (71) and each of the first conductive layer (112) and the second conductive layer (113) in the first direction (z); and a heat dissipation layer (114) located between the heat dissipation member and the insulating layer in the first direction, wherein the first conductive layer and the second conductive layer are bonded to the insulating layer, and the heat dissipation layer is bonded to each of the insulating layer and the heat dissipation member.Appendix 15. The semiconductor module (A10) according to Appendix 14, further comprising a sealing resin (50) covering the first semiconductor element (21) and the second semiconductor element (22), the sealing resin having a bottom surface (52) facing the heat dissipation member (71) in the first direction (z), and the heat dissipation layer (114) exposed from the bottom surface. Appendix 16. The semiconductor module (A10) according to Appendix 15, further comprising a first signal terminal (161), the first semiconductor element (21) having a first gate electrode (213) conducting to the first signal terminal, the sealing resin (50) having a top surface (51) facing opposite the bottom surface (52) in the first direction (z), and a portion of the first signal terminal protruding from the top surface. Appendix 17. A semiconductor module (A10) according to Appendix 15, further comprising a bus bar (81) connected to the first conductive portion (732) and the second conductive portion (733). Appendix 18. A semiconductor module (A30) comprising: a heat dissipation member (71); a first semiconductor element (21) and a second semiconductor element (22) located on one side of the heat dissipation member in a first direction (z); power terminals (15) electrically connected to each of the first semiconductor element and the second semiconductor element; and an external connection member (74) electrically connected to the power terminals, wherein the external connection member comprises a conductive portion (742) to which the power terminals are electrically connected, and a housing portion (741) supporting the conductive portion, wherein the housing portion overlaps the heat dissipation member when viewed in the first direction, and a portion of the housing portion is located between the heat dissipation member and the conductive portions in the first direction. Appendix 19. A vehicle (C) comprising: a drive source (932); and a semiconductor module (A10) according to Supplementary Note 15, wherein the semiconductor module is electrically connected to the drive source.Appendix 20. The method includes a first step (S1) of joining a semiconductor device (B) to a support surface (711A) of a heat dissipation member (71) having the support surface (711A) facing one side in a first direction (z), and a second step (S2) of arranging a first external connection member (73) on the support surface, wherein the semiconductor device includes a first semiconductor element (21), a second semiconductor element (22) conducting to the first semiconductor element, a first power terminal (12) conducting to the first semiconductor element, and a second power terminal (13) conducting to the second semiconductor element, and the first external connection member has a first conductive part (732) conducting to the first power terminal, a second conductive part (733) conducting to the second power terminal, and a first housing part (731) that supports the first conductive part and the second conductive part and is arranged on the support surface, and the second step is either a pre-step or a post-step of the first step, A method for manufacturing a semiconductor module (A10), wherein in the second step, the first housing part is placed on the support surface so that a portion of the first housing part is located between the heat dissipation member and each of the first conductive part and the second conductive part, and in either the first step or the second step, the first power terminal is conductively joined to the first conductive part, and the second power terminal is conductively joined to the second conductive part. Appendix 21. A semiconductor module (A10) according to Appendix 9, further comprising a fourth power terminal (15) electrically connected to the first semiconductor element (21) and the second semiconductor element (22), the fourth power terminal being located on the opposite side of the first semiconductor element with respect to the second semiconductor element in the second direction (x). Appendix 22. The semiconductor module (A10) described in Appendix 21 further comprises a second external connection member (74) that is electrically connected to the fourth power terminal (15), the second external connection member having a third conductive portion (742) to which the fourth power terminal is conductively joined, and a second housing portion (741) that supports the third conductive portion, the second housing portion overlapping the heat dissipation member (71) when viewed in the first direction (z), and a portion of the second housing portion being located between the heat dissipation member and the third conductive portion in the first direction.Supplementary Note 23. The semiconductor module (A10) according to Supplementary Note 11, wherein the second connection portion (733B) is located adjacent to the first connection portion (732B) in the third direction (y). Supplementary Note 24. The semiconductor module (A10) according to Supplementary Note 23, wherein the second connection portion (733B) is located on the opposite side of the heat dissipation member (71) with the first connection portion (732B) as a reference in the first direction (z). Supplementary Note 25. The semiconductor module (A10) according to Supplementary Note 11, wherein the first housing portion (731) is provided with a first recess (736) that penetrates in the first direction (z) and opens from one side in the second direction (x), and the first recess is located between the first power terminal (12) and the second power terminal (13) in the second direction. Supplementary Note 26. The semiconductor module (A10) according to Appendix 25, wherein the first housing portion (731) is provided with a second recess (736) that penetrates in the first direction (z) and opens from one side in the second direction (x), and the second recess is located between the first power terminal (12) and the third power terminal (14) in the second direction. Appendix 27. The semiconductor module (A10) according to Appendix 13, wherein the first power terminal (12) is conductively joined to the first conductive layer (112). Appendix 28. The semiconductor module (A10) according to Appendix 15, wherein the first housing portion (731) is joined to the heat dissipation member. Appendix 29. The semiconductor module (A10) according to Appendix 17, wherein the bus bar (81) includes a capacitor. Appendix 30. A method for manufacturing a semiconductor module (A10) described in Appendix 20, wherein the second step (S2) is a process preceding the first step (S1), and in the second step, the first housing portion (731) is joined to the support surface (711A).

[0133] A10, A20, A30: semiconductor module, B: semiconductor device, C: vehicle, 11: base material, 111: insulating layer, 112, 113: first conductive layer, second conductive layer, 112A, 113A: first mounting surface, second mounting surface, 114: heat dissipation layer, 12: first terminal, 121: first covering portion, 122: first exposed portion, 13: second terminal, 131: second covering portion, 132: second exposed portion, 14: third terminal, 141: third covering portion, 142: third exposed portion, 15: fourth power terminal, 151: fourth covering portion, 152: fourth exposed portion, 161, 162: first signal terminal, Second signal terminal, 171, 172: third signal terminal, fourth signal terminal, 18, 19: fifth signal terminal, sixth signal terminal, 21: first semiconductor element, 211: first electrode, 212: second electrode, 213: first gate electrode, 214: first detection electrode, 22: second semiconductor element, 221: third electrode, 222: fourth electrode, 223: second gate electrode, 224: second detection electrode, 23: thermistor, 29: conductive bonding layer, 31: first conductive member, 311: first main portion, 312: first bonding portion, 313: first connecting portion, 314: second bonding portion, 315: second connecting portion joint portion, 32: second conductive member, 321: second main portion, 322: third joint portion, 323: third connecting portion, 324: fourth joint portion, 325: fourth connecting portion, 326: middle portion, 327: horizontal beam portion, 41 to 47: first wire to seventh wire, 50: sealing resin, 51: top surface, 52: bottom surface, 53, 54: first side surface, second side surface, 55: recess, 61: first wiring, 611: first mounting layer, 612: first metal layer, 613: first gate wiring layer, 614: first detection wiring layer, 616: second detection wiring layer, 62: second wiring, 621: second mounting layer, 622: second Metal layer, 623: second gate wiring layer, 624: third detection wiring layer, 625: temperature detection wiring layer, 63: sleeve, 68, 69: first bonding layer, second bonding layer, 71: heat dissipation member, 711: base, 711A: support surface, 712: heat dissipation portion, 72: bonding layer, 73: first external connection member, 731: first housing portion, 732: first conductive portion, 732A: first accommodation portion, 732B: first connection portion, 733: second conductive portion, 733A: second accommodation portion, 733B: second connection portion, 734: first support portion, 735: first positioning portion, 736, 737: first recess,Second recess, 74: second external connection member, 741: second housing portion, 742: third conductive portion, 742A: third accommodation portion, 742B: third connection portion, 744: second support portion, 745: second positioning portion, 75: adhesive layer, 76: housing, 81: bus bar, 82: control board, S1, S2: first process, second process, 91: on-board charger, 92: storage battery, 93: drive system, 931: inverter, 932: drive source, z, x, y: first direction, second direction, third direction,

Claims

1. A semiconductor module comprising: a heat dissipation member; a first semiconductor element and a second semiconductor element located on one side of the heat dissipation member in a first direction; a first power terminal conductive to the first semiconductor element; a second power terminal conductive to the second semiconductor element; and a first external connection member conductive to the first power terminal and the second power terminal, wherein the second semiconductor element is conductive to the first semiconductor element, and the first external connection member has a first conductive part to which the first power terminal is conductively joined, a second conductive part to which the second power terminal is conductively joined, and a first housing part supporting the first conductive part and the second conductive part, wherein when viewed in the first direction, the first housing part overlaps the heat dissipation member, and in the first direction, a portion of the first housing part is located between the heat dissipation member and the first conductive part and the second conductive part.

2. The semiconductor module according to claim 1, wherein a portion of each of the first conductive portion and the second conductive portion is housed in the first housing portion.

3. The semiconductor module according to claim 2, wherein the first housing portion includes a resin.

4. The semiconductor module described in claim 3, wherein the first power terminal and the second power terminal are located on the opposite side of the second semiconductor element with respect to the first semiconductor element in a second direction perpendicular to the first direction, and the second power terminal is located adjacent to the first power terminal in a third direction perpendicular to both the first direction and the second direction.

5. The semiconductor module described in claim 4, wherein the first conductive portion has a first housing portion housed in the first housing portion and conductively joined to the first power terminal, and a first connection portion connected to the first housing portion and protruding from the first housing portion in the second direction, the first connection portion being located on the opposite side of the first semiconductor element relative to the first housing portion in the second direction, and the first connection portion being located outward from the heat dissipation member when viewed in the first direction.

6. The semiconductor module according to claim 5, wherein the dimension of the first connection portion in the third direction is greater than the dimension of the first power terminal in the third direction.

7. The semiconductor module according to claim 6, wherein the dimension of the first connection portion in the first direction is greater than the dimension of the first power terminal in the first direction.

8. A semiconductor module as described in claim 5, wherein the first power terminal is located on the opposite side of the heat dissipation member relative to the first conductive portion in the first direction, and the first power terminal overlaps the first accommodating portion when viewed in the first direction.

9. The semiconductor module according to claim 8, further comprising a third power terminal electrically connected to the second semiconductor element, the third power terminal being located on the opposite side of the second semiconductor element relative to the first semiconductor element in the second direction, and the third power terminal being electrically conductively joined to the second conductive portion.

10. The semiconductor module according to claim 9, wherein the first power terminal is located between the second power terminal and the third power terminal in the third direction.

11. The semiconductor module described in claim 10, wherein the second conductive portion has a second housing portion housed in the first housing portion and to which the second power terminal and the third power terminal are each conductively joined, and a second connection portion connected to the second housing portion and protruding from the first housing portion in the second direction, the second connection portion being located on the opposite side of the second housing portion from the first semiconductor element in the second direction, the second connection portion being located outward from the heat dissipation member when viewed in the first direction, and the second housing portion overlapping the first housing portion when viewed in the first direction.

12. A semiconductor module as described in claim 8, wherein the first external connection member has a first support portion and a first positioning portion located on the opposite side of the heat dissipation member with respect to the first housing portion in the first direction, each of the first support portion and the first positioning portion protruding from the first housing portion in the first direction, and the first positioning portion includes a portion that protrudes in the first direction further than the first support portion.

13. A semiconductor module as described in any one of claims 5 to 12, further comprising: a first conductive layer to which the first semiconductor element is conductively bonded; and a second conductive layer to which the second semiconductor element is conductively bonded, wherein the first conductive layer is located between the heat dissipation member and the first semiconductor element in the first direction; and the second conductive layer is located between the heat dissipation member and the second semiconductor element in the first direction.

14. The semiconductor module described in claim 13, further comprising: an insulating layer located between the heat dissipation member and each of the first conductive layer and the second conductive layer in the first direction; and a heat dissipation layer located between the heat dissipation member and the insulating layer in the first direction, wherein the first conductive layer and the second conductive layer are bonded to the insulating layer, and the heat dissipation layer is bonded to each of the insulating layer and the heat dissipation member.

15. The semiconductor module according to claim 14, further comprising a sealing resin covering the first semiconductor element and the second semiconductor element, the sealing resin having a bottom surface facing the heat dissipation member in the first direction, and the heat dissipation layer being exposed from the bottom surface.

16. The semiconductor module according to claim 15, further comprising a first signal terminal, wherein the first semiconductor element has a first gate electrode that is electrically connected to the first signal terminal, the sealing resin has a top surface that faces the opposite side to the bottom surface in the first direction, and a portion of the first signal terminal protrudes from the top surface.

17. The semiconductor module according to claim 15, further comprising a bus bar connected to the first conductive portion and the second conductive portion.

18. A semiconductor module comprising: a heat dissipation member; a first semiconductor element and a second semiconductor element located on one side of the heat dissipation member in a first direction; power terminals electrically connected to each of the first semiconductor element and the second semiconductor element; and an external connection member electrically connected to the power terminals, wherein the external connection member comprises a conductive portion to which the power terminals are electrically connected, and a housing portion supporting the conductive portion, wherein when viewed in the first direction, the housing portion overlaps the heat dissipation member, and in the first direction, a portion of the housing portion is located between the heat dissipation member and the conductive portion.

19. A vehicle comprising: a drive source; and the semiconductor module according to claim 15, wherein the semiconductor module is electrically connected to the drive source.

20. A semiconductor device comprising: a first step of joining a semiconductor device to a support surface of a heat dissipation member having the support surface facing one side in a first direction; and a second step of arranging a first external connection member on the support surface, wherein the semiconductor device comprises a first semiconductor element, a second semiconductor element conducting to the first semiconductor element, a first power terminal conducting to the first semiconductor element, and a second power terminal conducting to the second semiconductor element, the first external connection member having a first conductive part conducting to the first power terminal, a second conductive part conducting to the second power terminal, and a first housing part supporting the first conductive part and the second conductive part and arranged on the support surface, the second step being either a step before or a step after the first step, and in the second step, the first housing part is arranged on the support surface so that a part of the first housing part is located between the heat dissipation member and each of the first conductive part and the second conductive part, a first power terminal conductively joined to the first conductive portion, and a second power terminal conductively joined to the second conductive portion, in either the first step or the second step;

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