Inorganic substrate for semiconductor

Abstract

Provided is a technique for suppressing warpage of an inorganic substrate for a semiconductor. This inorganic substrate (10) for a semiconductor contains glass. The inorganic substrate (10) for a semiconductor has a plurality of holes (13) formed in at least one among a first main surface (11) and a second main surface (12). The first main surface (11) and the second main surface (12) have a rectangular shape in which the length of each side is 50 mm or more. The weight of the substance removed from the entire inorganic substrate (10) for a semiconductor by the formation of the holes (13) is 10 ppm to 50% of the total weight of the inorganic substrate (10) for a semiconductor before the formation of the holes (13). When a peripheral edge part (15) of the inorganic substrate (10) for a semiconductor is divided into four first small pieces (15A-15D) by two straight lines that are orthogonal to each other at the center of the first main surface (11) and divide the first main surface (11) into four equal parts, the weight of the substance removed from the inorganic substrate (10) for a semiconductor by the formation of the holes (13) in each of the first small pieces (15A-15D) is 70-130% of the average value of the weight.

Description

Inorganic substrates for semiconductors

[0001] The present disclosure relates to inorganic substrates for semiconductors.

[0002] In recent years, there has been progress in the development of technology for mounting multiple semiconductor chips on an insulating substrate and electrically connecting the multiple semiconductor chips. Glass substrates and resin substrates have been considered as insulating substrates. Glass substrates are superior to resin substrates in terms of flatness, thermal stability, and insulation. The glass substrate has a first main surface and a second main surface facing opposite to the first main surface, and has a through hole penetrating from the first main surface to the second main surface (see, for example, Patent Document 1).

[0003] International Publication No. 2022 / 075068

[0004] The inorganic substrate for semiconductors has many holes. The number and arrangement of the holes are appropriately selected depending on the wiring pattern, etc. If there is a bias in the weight of the substance removed from the inorganic substrate for semiconductors by forming the holes, the inorganic substrate for semiconductors will warp.

[0005] One embodiment of the present disclosure provides a technique for suppressing warpage of an inorganic substrate for semiconductor use.

[0006] An inorganic substrate for semiconductor use according to one embodiment of the present disclosure contains glass. The glass substrate for semiconductor use has a first main surface and a second main surface facing opposite to the first main surface. A wiring layer is to be formed on at least one of the first main surface and the second main surface. The inorganic substrate for semiconductor use has a plurality of holes formed in at least one of the first main surface and the second main surface. The first main surface and the second main surface have a rectangular shape with each side having a length of 50 mm or more. The weight of the substance removed from the entire inorganic substrate for semiconductor use by forming the holes is 10 ppm to 50% of the entire weight of the inorganic substrate for semiconductor use before the holes are formed. When the peripheral edge of the inorganic substrate for semiconductor use is divided into four first small pieces by two straight lines that intersect at the center of the first main surface and divide the first main surface into four equal parts, the weight of the substance removed from the inorganic substrate for semiconductor use by forming the holes in each of the first small pieces is 70% to 130% of the average weight. The peripheral edge portion of the inorganic substrate for semiconductor use is a portion whose distance from each side of the first main surface is equal to or less than ¼ of the length of a side perpendicular to each side.

[0007] According to one embodiment of the present disclosure, warpage of an inorganic substrate for semiconductor use can be suppressed.

[0008] Fig. 1 is a plan view showing an inorganic substrate for semiconductor according to one embodiment. Fig. 2 is a cross-sectional view showing an inorganic substrate for semiconductor according to one embodiment. Fig. 3 is a plan view showing a first small piece of the inorganic substrate for semiconductor shown in Fig. 1. Fig. 4 is a plan view showing a second small piece of the inorganic substrate for semiconductor shown in Fig. 1. Fig. 5 is a plan view showing an inorganic substrate for semiconductor according to a modified example. Fig. 6 is a plan view showing a first small piece of the inorganic substrate for semiconductor shown in Fig. 5. Fig. 7 is a plan view showing a second small piece of the inorganic substrate for semiconductor shown in Fig. 5.

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or similar components are denoted by the same reference numerals, and their description may be omitted. In the specification, the symbol "to" indicating a range of values ​​means that the values ​​before and after it are included as the lower and upper limits.

[0010] 1 to 4, an inorganic substrate 10 for semiconductor use according to one embodiment will be described. Hereinafter, the inorganic substrate 10 for semiconductor use will also be simply referred to as the inorganic substrate 10. In this embodiment, the inorganic substrate 10 is used as a substrate for mounting semiconductors, but it may also be used as a substrate for passive elements or a substrate for a probe card.

[0011] The inorganic substrate 10 includes glass. The glass constituting the inorganic substrate 10 is, for example, alkali-free glass, quartz glass, or photosensitive glass. In this embodiment, the inorganic substrate 10 is a glass substrate containing only glass, but it may also be a composite substrate containing glass and ceramic. The composite substrate can be obtained, for example, by mixing glass powder and ceramic powder and sintering the mixture.

[0012] The inorganic substrate 10 is superior in flatness, thermal stability, and insulation properties to a resin substrate. The inorganic substrate 10 has an average linear expansion coefficient of 0.5×10 at 5° C. to 200° C. －６ / ℃~13.0×10 －６ / ° C. If the average linear expansion coefficient is within the above range, peeling of the wiring layers 21 and 22 can be suppressed.

[0013] As shown in Fig. 2, the inorganic substrate 10 has a first major surface 11 and a second major surface 12 facing opposite to the first major surface 11. Wiring layers 21, 22 are to be formed on at least one of the first major surface 11 and the second major surface 12. The wiring layer 21 is formed on the first major surface 11, and the wiring layer 22 is formed on the second major surface 12. In this embodiment, the first major surface 11 and the second major surface 12 have a rectangular shape, but may also have a circular shape. Note that the term "rectangle" includes a square.

[0014] The average value of the thickness t of the inorganic substrate 10 is, for example, 0.05 mm to 2.0 mm. The smaller the average value of t, the easier it is to form holes 13, which will be described later. Furthermore, the smaller the average value of t, the thinner the semiconductor package can be. The average value of t is preferably 0.1 mm to 1.5 mm, and more preferably 0.2 mm to 1.2 mm.

[0015] 2, the inorganic substrate 10 has holes 13 formed in at least one of the first main surface 11 and the second main surface 12. In this embodiment, the holes 13 are through holes formed so as to penetrate through both the first main surface 11 and the second main surface 12, but they may also be non-through holes (bottomed holes) formed in only one of the first main surface 11 and the second main surface 12. Furthermore, a mixture of through holes and non-through holes may also be formed.

[0016] At least one hole 13 is to be filled with an electrode that is electrically connected to at least one of the wiring layers 21 and 22. When the inorganic substrate 10 is used as an interposer, at least one hole 13 is a through hole, and a through electrode is to be filled in the through hole. The through electrode electrically connects the wiring layer 21 and the wiring layer 22.

[0017] At least one hole 13 may be a dummy hole in which no electrode is to be embedded. The dummy hole is formed for the purpose of reducing the weight of the inorganic substrate 10 or preventing warping of the inorganic substrate 10. A hole in which an electrode is to be embedded may hereinafter be referred to as an electrode hole to distinguish it from a dummy hole.

[0018] In this embodiment, the holes 13 are straight holes as shown in Fig. 2. Straight holes have a constant diameter regardless of the depth from the first main surface 11 or the second main surface 12. The holes 13 may also be tapered holes. Tapered holes have a diameter that decreases as the depth from the first main surface 11 or the second main surface 12 increases.

[0019] Although not shown, the hole 13 may have a constriction midway, with two tapered holes sandwiched between the constriction. One tapered hole has a smaller diameter as its depth from the first main surface 11 increases. The other tapered hole has a smaller diameter as its depth from the second main surface 12 increases. Alternatively, the hole 13 may be a combination of a tapered hole and a straight hole.

[0020] When the hole 13 is a through hole and a straight hole, the opening diameter d1 of the hole 13 in the first main surface 11 is the same as the opening diameter d2 of the hole 13 in the second main surface 12. Note that the hole 13 does not have to be a straight hole, and the opening diameter d1 and the opening diameter d2 do not have to be the same. Either the opening diameter d1 or the opening diameter d2 may be larger.

[0021] The opening diameter d1 of the holes 13 in the first main surface 11 is, for example, 10 μm to 300 μm. The opening diameter d1 is preferably 20 μm to 200 μm, and more preferably 50 μm to 100 μm. Holes 13 with different opening diameters d1 may be mixed in the first main surface 11.

[0022] Similarly, the opening diameter d2 of the holes 13 in the second main surface 12 is, for example, 10 μm to 300 μm. The opening diameter d2 is preferably 20 μm to 200 μm, and more preferably 50 μm to 100 μm. Holes 13 with different opening diameters d2 may be mixed in the second main surface 12.

[0023] From the viewpoint of workability, the shape of the opening of the holes 13 is preferably circular in both the first main surface 11 and the second main surface 12. However, the shape of the opening of the holes 13 is not limited to a circle and may be an ellipse or a polygon, etc. It is sufficient that the circle-equivalent diameter of the opening of the holes 13 is 10 μm to 300 μm.

[0024] The number and arrangement of the holes 13 are not limited to those shown in Fig. 1. The number and arrangement of the holes 13, particularly the number and arrangement of the electrode holes, are appropriately selected depending on the wiring patterns of the wiring layers 21 and 22, etc.

[0025] The hole 13 may be formed by a conventional method, but in this embodiment, it is formed by ablation. In ablation, glass is locally evaporated or sublimated at the point of irradiation with the laser beam, and the glass is locally removed. Compared to drilling, this method can suppress the occurrence of defects. Defects include, for example, fractures or cracks.

[0026] The light source for the ablation process may be either a CW (Continuous Wave) laser or a pulsed laser, but a pulsed laser is preferred. ２ The pulsed laser may be a femtosecond laser or a picosecond laser.

[0027] The method for forming the holes 13 may be a general method, as described above. For example, the method for forming the holes 13 may be drilling, etching, or blasting. Laser processing and etching may be combined. Laser processing forms a modified portion by modifying a part of the glass substrate, and etching preferentially etches the modified portion.

[0028] Annealing may be performed after the holes 13 are formed. The annealing is a process in which the inorganic substrate 10 is heated to remove residual stress in the inorganic substrate 10.

[0029] The inorganic substrate 10 may satisfy the following requirements (1A) and (1B). (1A) The first main surface 11 and the second main surface 12 have a rectangular shape with side lengths D1 and D2 of 50 mm or more. D1 is the length of the horizontal side, and D2 is the length of the vertical side. D1 may be equal to or greater than D2, and may be the same as D2. (1B) The weight W1 of the substance removed from the entire inorganic substrate 10 by forming the holes 13 is 10 ppm to 50% of the total weight W0 of the inorganic substrate 10 before the holes 13 are formed.

[0030] The present inventors have found that when the above (1A) and (1B) are satisfied, the following (1C) can suppress warping of the inorganic substrate 10: (1C) In each of the first pieces 15A, 15B, 15C, and 15D shown in Fig. 3, the weights mA, mB, mC, and mD of the substances removed from the inorganic substrate 10 by forming the holes 13 are 70% or more and 130% or less of the average value mave of the weights mA, mB, mC, and mD.

[0031] 3 , the first pieces 15A, 15B, 15C, and 15D are formed by dividing the peripheral portion 15 of the inorganic substrate 10 by two straight lines L1 and L2. The two straight lines L1 and L2 intersect at right angles at the center of the first main surface 11 and divide the first main surface 11 into four equal parts. The straight line L1 is parallel to the vertical side of the first main surface 11, and the straight line L2 is parallel to the horizontal side of the first main surface 11.

[0032] Here, the peripheral portion 15 of the inorganic substrate 10 is a portion whose distance from each side of the first major surface 11 is ¼ or less of the length of the side perpendicular to each side. For example, the peripheral portion 15 of the inorganic substrate 10 includes (A) a portion along the vertical side of the first major surface 11, whose distance from the vertical side is ¼ or less of the length of the horizontal side, and (B) a portion along the horizontal side of the first major surface 11, whose distance from the horizontal side is ¼ or less of the length of the vertical side. In Figures 3 and 1, L3 indicates the inner periphery of the peripheral portion 15.

[0033] mA is the weight of material removed from inorganic substrate 10 by forming holes 13 in first piece 15A. mB is the weight of material removed from inorganic substrate 10 by forming holes 13 in first piece 15B. mC is the weight of material removed from inorganic substrate 10 by forming holes 13 in first piece 15C. mD is the weight of material removed from inorganic substrate 10 by forming holes 13 in first piece 15D.

[0034] (1C) mA, mB, mC, and mD are each 70% to 130% of mave. mA, mB, mC, and mD are each preferably 80% to 120% of mave, more preferably 90% to 110% of mave, and even more preferably 95% to 105% of mave.

[0035] Generally, the magnitude of the moment of force is determined by the product of the distance and the force. When (1A) is true, the size of the inorganic substrate 10 is large, and the distance from the center to the periphery of the inorganic substrate 10 is long. When (1A) is true, if (1C) is true, the bias of the holes 13 in the periphery 15 of the inorganic substrate 10 is small, and warping of the inorganic substrate 10 due to the formation of the holes 13 can be suppressed.

[0036] Note that when (1A) is not satisfied, the size of the inorganic substrate 10 is small, so even if (1C) is not satisfied, warping hardly occurs. It is when (1A) and (1B) are satisfied that (1C) is satisfied that it is important. Even if (1A) is satisfied, when (1B) is not satisfied, specifically when W1 exceeds 50% of W0, the number of holes 13 is large and the rigidity of the inorganic substrate 10 is low. Therefore, even if (1C) is not satisfied, warping hardly occurs.

[0037] The holes 13 may include both electrode holes and dummy holes. When (1A) and (1B) are satisfied but (1C) is not satisfied with electrode holes alone, it is preferable to combine electrode holes and dummy holes so that (1C) is satisfied. The dummy holes may be formed at least in the first piece in which the weight of the substance removed from the inorganic substrate 10 by the formation of the electrode holes is the smallest.

[0038] Dummy holes do not have to be formed in all of the first pieces 15A, 15B, 15C, and 15D. This prevents unnecessary increases in the number of dummy holes and shortens the time required to process the dummy holes. Dummy holes only need to be formed in the first pieces that have the smallest weight of material removed from the inorganic substrate 10 by forming the electrode holes. Dummy holes do not have to be formed in the central portion of the inorganic substrate 10, excluding the peripheral portion 15.

[0039] When the above (1A) and (1B) are true, it is sufficient that the above (1C) is true, and the following (1D) may or may not be true: (1D) In ​​each of the second pieces 10A, 10B, 10C, and 10D shown in Figure 4, the weights MA, MB, MC, and MD of the substances removed from the inorganic substrate 10 by forming the holes 13 are 70% or more and 130% or less of the average value Mave of the weights MA, MB, MC, and MD.

[0040] As shown in Figure 4, the second pieces 10A, 10B, 10C, and 10D are obtained by dividing the entire inorganic substrate 10 by two straight lines L1 and L2. MA is the weight of the substance removed from the inorganic substrate 10 by forming the holes 13 in the second piece 10A. MB is the weight of the substance removed from the inorganic substrate 10 by forming the holes 13 in the second piece 10B. MC is the weight of the substance removed from the inorganic substrate 10 by forming the holes 13 in the second piece 10C. MD is the weight of the substance removed from the inorganic substrate 10 by forming the holes 13 in the second piece 10D.

[0041] (1D) MA, MB, MC and MD are each 70% or more and 130% or less of Mave.

[0042] The second pieces 10A, 10B, 10C, and 10D include not only the peripheral portion 15 of the inorganic substrate 10, but also the central portion excluding the peripheral portion 15 of the inorganic substrate 10. The central portion is closer to the center than the peripheral portion 15. Therefore, the magnitude of the moment of force generated by the formation of the holes 13 is smaller in the central portion. Therefore, even if (1D) does not hold, as long as (1C) holds, there will be almost no warping.

[0043] Next, an inorganic substrate 10 according to a modification will be described with reference to Figures 5 to 7. The following mainly describes the differences from the above embodiment.

[0044] The inorganic substrate 10 may satisfy the following requirements (2A) and (2B): (2A) The first main surface 11 and the second main surface 12 have a circular shape with a diameter D of 50 mm or more. (2B) The weight W1 of the substance removed from the entire inorganic substrate 10 by forming the holes 13 is 10 ppm to 50% of the total weight W0 of the inorganic substrate 10 before the holes 13 are formed.

[0045] The present inventors have found that when the above (2A) and (2B) are satisfied, the following (2C) can be satisfied to suppress warpage of the inorganic substrate 10. (2C) In each of the first pieces 15A, 15B, 15C, and 15D shown in Fig. 6, the weights mA, mB, mC, and mD of the substances removed from the inorganic substrate 10 by forming the holes 13 are 70% or more and 130% or less of the average value mave of the weights mA, mB, mC, and mD.

[0046] As shown in Figure 6, the first pieces 15A, 15B, 15C, and 15D are formed by dividing the peripheral edge 15 of the inorganic substrate 10 by two straight lines L1 and L2. The two straight lines L1 and L2 intersect at right angles at the center of the first main surface 11 and divide the first main surface 11 into four equal parts. The straight line L1 passes through a notch 16 in the inorganic substrate 10. The straight line L1 may pass through an orientation flat instead of the notch 16. The notch 16 or the orientation flat indicates the orientation of the inorganic substrate 10.

[0047] Here, the peripheral portion 15 of the inorganic substrate 10 is a portion whose distance from the periphery of the first main surface 11 is equal to or less than ¼ of the diameter of the first main surface 11. In Figures 6 and 5, L3 indicates the inner periphery of the peripheral portion 15.

[0048] (2C) mA, mB, mC, and mD are each 70% to 130% of mave. mA, mB, mC, and mD are each preferably 80% to 120% of mave, more preferably 90% to 110% of mave, and even more preferably 95% to 105% of mave.

[0049] Generally, the magnitude of the force moment is determined by the product of the distance and the force. When (2A) is true, the size of the inorganic substrate 10 is large, and the distance from the center to the periphery of the inorganic substrate 10 is long. When (2A) is true, if (2C) is true, the holes 13 are less unevenly distributed in the periphery 15 of the inorganic substrate 10, and warping of the inorganic substrate 10 due to the formation of the holes 13 can be suppressed.

[0050] Note that when (2A) is not satisfied, the size of the inorganic substrate 10 is small, so even if (2C) is not satisfied, warping hardly occurs. It is when (2A) and (2B) are satisfied that (2C) is satisfied that it is important. Even if (2A) is satisfied, when (2B) is not satisfied, specifically when W1 exceeds 50% of W0, the number of holes 13 is large and the rigidity of the inorganic substrate 10 is low. Therefore, even if (2C) is not satisfied, warping hardly occurs.

[0051] The holes 13 may include both electrode holes and dummy holes. When (2A) and (2B) are satisfied but (2C) is not satisfied with electrode holes alone, it is preferable to combine electrode holes and dummy holes so that (2C) is satisfied. The dummy holes only need to be formed in the first piece in which the weight of the substance removed from the inorganic substrate 10 by the formation of the electrode holes is the smallest.

[0052] Dummy holes do not have to be formed in all of the first pieces 15A, 15B, 15C, and 15D. This prevents unnecessary increases in the number of dummy holes and shortens the time required to process the dummy holes. Dummy holes only need to be formed in the first pieces that have the smallest weight of material removed from the inorganic substrate 10 by forming the electrode holes. Dummy holes do not have to be formed in the central portion of the inorganic substrate 10, excluding the peripheral portion 15.

[0053] When the above (2A) and (2B) are true, it is sufficient that the above (2C) is true, and the following (2D) may or may not be true: (2D) In ​​each of the second pieces 10A, 10B, 10C, and 10D shown in Figure 7, the weights MA, MB, MC, and MD of the substances removed from the inorganic substrate 10 by forming the holes 13 are 70% or more and 130% or less of the average value Mave of the weights MA, MB, MC, and MD.

[0054] As shown in FIG. 7, the second pieces 10A, 10B, 10C, and 10D are formed by dividing the entire inorganic substrate 10 by two straight lines L1 and L2.

[0055] (2D) MA, MB, MC and MD are each 70% or more and 130% or less of Mave.

[0056] The second pieces 10A, 10B, 10C, and 10D include not only the peripheral portion 15 of the inorganic substrate 10, but also the central portion excluding the peripheral portion 15 of the inorganic substrate 10. The central portion is closer to the center than the peripheral portion 15. Therefore, the magnitude of the moment of force generated by the formation of the holes 13 is smaller in the central portion. Therefore, even if (2D) does not hold, as long as (2C) holds, there will be almost no warping.

[0057] The experimental data will be described below. In Examples 1 to 18, inorganic substrates were fabricated under the same conditions except for those shown in Tables 1 and 2. Specifically, a glass substrate was prepared, and the number of through holes shown in Tables 1 and 2 was formed in the prepared glass substrate by ablation processing. The glass material of the glass substrate was alkali-free glass. An ArF excimer laser device (manufactured by Coherent, product name: LPX Pro 305) was used to form the through holes. This device had a laser beam wavelength of 193 nm, a maximum pulse energy of 0.6 J, a repetition frequency of 50 Hz, and a pulse width of 25 ns. The ArF excimer laser device irradiated a laser beam onto the first main surface of the glass substrate, thereby forming through holes extending from the first main surface to the second main surface. The through holes were straight holes, and the openings of the through holes were circular. Examples 1, 4, 5, 8 and 17 are working examples, and Examples 2 to 3, 6 to 7, 9 to 16 and 18 are comparative examples.

[0058]

[0059]

[0060] In Examples 1 to 18, measurements of MA, MB, MC, and MD were performed after the formation of the through holes. MA, MB, MC, and MD were determined as the difference in weight of the second small piece before and after the formation of the through holes. The weight of the second small piece after the formation of the through holes was actually measured. The weight of the second small piece before the formation of the through holes was calculated from the outer dimensions of the second small piece and the density of the glass.

[0061] In Examples 1 to 18, mA, mB, mC, and mD were measured after the formation of the through holes. mA, mB, mC, and mD were calculated as the difference in weight of the first small piece before and after the formation of the through holes. The weight of the first small piece after the formation of the through holes was actually measured. The weight of the first small piece before the formation of the through holes was calculated from the outer dimensions of the first small piece and the density of the glass. The first small piece was produced after the second small piece was produced.

[0062] In Examples 1 to 18, warpage was measured after the formation of through holes and before the glass substrate was divided into four second small pieces. Warpage was measured in an area where no through holes were formed using a warpage measuring device (SURFCOM 1400G-LCD manufactured by Tokyo Seimitsu Co., Ltd.). It should be noted that warpage can also be measured by using a gap gauge to measure the maximum gap between the surface plate and the underside of the glass substrate placed on the surface plate. In Tables 1 and 2, "◯" means that the warpage was 500 μm or less, and "×" means that the warpage was greater than 500 μm.

[0063] As shown mainly in Table 2, according to Examples 1 to 8, (1A) and (1B) are satisfied. Among Examples 1 to 8, Examples 1, 4, 5, and 8 satisfy (1C) in addition to (1A) and (1B), and therefore exhibited small warpage. It can be seen from Examples 4 and 8 that when (1A) and (1B) are satisfied, if (1C) is satisfied, warpage will be small even if (1D) is not satisfied.

[0064] As shown mainly in Table 2, in Examples 9 to 12, (1A) is satisfied, but (1B) is not satisfied. In Examples 9 to 12, W1 exceeds 50% of W0, the number of holes is large, and the rigidity of the inorganic substrate is low. Therefore, even when (1C) is not satisfied, warpage is small (see Examples 10 and 11).

[0065] As shown mainly in Table 2, in Examples 13 to 16, (1B) is satisfied, but (1A) is not satisfied. In Examples 13 to 16, the size of the inorganic substrate 10 is small. Therefore, even when (1C) is not satisfied, it can be seen that the warpage is small (see Examples 14 and 15).

[0066] As shown mainly in Table 2, (2A) and (2B) are satisfied in Examples 17 and 18. Among Examples 17 and 18, Example 17 satisfied (2C) in addition to (2A) and (2B), and therefore had small warpage.

[0067] The inorganic substrate for semiconductor according to the present disclosure has been described above, but the present disclosure is not limited to the above-described embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0068] This application claims priority based on Japanese Patent Application No. 2024-134803, filed August 13, 2024, the disclosure of which is incorporated herein in its entirety by reference.

[0069] REFERENCE SIGNS LIST 10 inorganic substrate 11 first main surface 12 second main surface 13 hole 15 peripheral portion 15A, 15B, 15C, 15D first small piece 21 wiring layer 22 wiring layer

Claims

1. A glass-containing inorganic substrate for semiconductors, the inorganic substrate having a first main surface and a second main surface facing opposite to the first main surface, and a wiring layer to be formed on at least one of the first main surface and the second main surface, wherein the inorganic substrate for semiconductors has a plurality of holes formed in at least one of the first main surface and the second main surface, the first main surface and the second main surface have a rectangular shape with each side having a length of 50 mm or more, the weight of the substance removed from the entire inorganic substrate for semiconductors by forming the holes is 10 ppm to 50% of the entire weight of the inorganic substrate for semiconductors before the holes are formed, and when the peripheral edge of the inorganic substrate for semiconductors is divided into four first small pieces by two straight lines that intersect at the center of the first main surface and divide the first main surface into four equal parts, the weight of the substance removed from the inorganic substrate for semiconductors by forming the holes in each first small piece is 70% to 130% of the average weight, The inorganic substrate for semiconductor use, wherein the peripheral edge portion of the inorganic substrate for semiconductor use is a portion whose distance from each side of the first main surface is equal to or less than ¼ of the length of a side perpendicular to each side.

2. A glass-containing inorganic substrate for semiconductors, having a first main surface and a second main surface facing opposite to the first main surface, and a wiring layer to be formed on at least one of the first main surface and the second main surface, wherein the inorganic substrate for semiconductors has a plurality of holes formed in at least one of the first main surface and the second main surface, the first main surface and the second main surface have a circular shape with a diameter of 50 mm or more, the weight of the substance removed from the entire inorganic substrate for semiconductors by forming the holes is 10 ppm to 50% of the entire weight of the inorganic substrate for semiconductors before the holes are formed, and when the peripheral edge of the inorganic substrate for semiconductors is divided into four first small pieces by two straight lines that intersect at the center of the first main surface and divide the first main surface into four equal parts, the weight of the substance removed from the inorganic substrate for semiconductors by forming the holes in each of the first small pieces is 70% to 130% of the average weight, The inorganic substrate for semiconductor use, wherein the peripheral portion of the inorganic substrate for semiconductor use is a portion whose distance from the peripheral edge of the first main surface is equal to or less than ¼ of the diameter of the first main surface.

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