Substrate processing apparatus and substrate processing method

Abstract

Disclosed is a processing method for processing a substrate, the substrate processing method including: a first step for supplying a first processing liquid to a substrate while holding and rotating the substrate on which a coating film of a metal-containing resist is formed, and for removing the coating film in a region that has a predetermined width from the edge portion of the substrate; a second step for sequentially supplying a second processing liquid to a portion from which the coating film has been removed in a direction from the edge portion of substrate to the center of substrate, while rotating the substrate after the first step; a third step for sequentially supplying the second processing liquid in a direction from the center of the substrate to the edge portion of the substrate, while rotating the substrate after the second step; and a fourth step for discharging a third processing liquid to the region that has the predetermined width from the edge of the substrate, while rotating the substrate after the third step. In the third step, the second processing liquid is discharged to the back surface side of the substrate.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses a coating film removing device that uses a remover to remove the peripheral edge of a coating film formed by supplying a coating liquid to the surface of a circular substrate.

[0003] Japanese Patent Application Publication No. 2018-121045

[0004] The technique according to the present disclosure preferably removes the peripheral portion of a metal-containing coating formed on a substrate.

[0005] One aspect of the present disclosure is a processing apparatus for processing a substrate, the processing apparatus including: a substrate holding unit that holds and rotates a substrate on which a coating film of a metal-containing resist is formed; a first processing liquid supply unit that supplies a first processing liquid to a front surface of the substrate; a second processing liquid supply unit that supplies a second processing liquid to the front surface of the substrate; a third processing liquid supply unit that supplies a third processing liquid to the front surface of the substrate; a fourth processing liquid supply unit that supplies a fourth processing liquid to a rear surface of the substrate; a fifth processing liquid supply unit that supplies a fifth processing liquid to the rear surface of the substrate; a sixth processing liquid supply unit that supplies a sixth processing liquid to the rear surface of the substrate; and a control unit, wherein the control unit performs a first step of supplying a first processing liquid from the first processing liquid supply unit while the substrate is rotated, and removing the coating film in a region of a predetermined width from an edge of the substrate; a second step of supplying a second processing liquid from a fifth processing liquid supply unit to a portion of the substrate edge from which the coating film has been removed while moving the second processing liquid supply unit from the edge of the substrate toward the center of the substrate while rotating the substrate; a third step of supplying a fifth processing liquid from a fifth processing liquid supply unit to a rear surface of the substrate during the second step, and supplying a second processing liquid while moving the second processing liquid supply unit from the center toward the base end while rotating the substrate after the second step; a fourth step of supplying the fifth processing liquid from the fifth processing liquid supply unit to the rear surface of the substrate during the third step, and discharging the third processing liquid from the third processing liquid supply unit to a region of a predetermined width from the edge of the substrate while rotating the substrate after the third step; and supplying the sixth processing liquid from the sixth processing liquid supply unit to the rear surface of the substrate during the fourth step.

[0006] According to the present disclosure, it is possible to suitably remove the peripheral portion of a metal-containing coating formed on a substrate.

[0007] 1 is a side view schematically showing the outline of the configuration of a coating film forming apparatus according to an embodiment; FIG. 2 is a plan view schematically showing the outline of the configuration of the coating film forming apparatus of FIG. 1; FIG. 3 shows a state in which a metal-containing resist film is applied to a surface of a wafer in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer; FIG. 4 shows a state in which a first step is performed in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer; FIG. 5 shows a state in which a second step is performed in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of the wafer. 12A and 12B are diagrams showing the state of carrying out a third step in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of a wafer. 12B are diagrams showing the state of carrying out a fourth step in a coating film forming method according to an embodiment, where (a) is a perspective view, (b) is an explanatory diagram schematically showing a portion of a side cross section, and (c) is a plan view of a portion of an edge of a wafer. 12C are graphs showing the effect of supplying a processing liquid to the back side of a wafer during scan-out. 12D are diagrams showing the discharge angle of a processing liquid supply nozzle in a coating film forming apparatus according to an embodiment, as viewed from the side, relative to the wafer. 12E are diagrams showing the discharge angle of a processing liquid supply nozzle in a coating film forming apparatus according to an embodiment, as viewed from the side, relative to the wafer. 12F are diagrams showing the state of arrangement of three processing liquid supply nozzles arranged on the front side of a wafer. 12H are diagrams showing the state of arrangement of back side nozzles arranged on the back side of a wafer when the nozzles on the front side of the wafer have the arrangement shown in FIG. 12F. 12H are diagrams showing the reaction occurring during the production of a metal-containing resist.

[0008] In the photolithography process in the manufacturing process of semiconductor devices, a coating film such as an anti-reflective film or a resist film is formed on a processing object such as a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate. In such cases, for example, when forming a resist film, a spin coating method is often used, in which a resist liquid is supplied to the wafer from above the center of the wafer and the wafer is rotated to spread the resist liquid on the wafer over the entire surface of the wafer.

[0009] In the spin coating method, the resist solution on the wafer spreads all the way to the side edges of the wafer, and therefore, as in the technique described in Patent Document 1, the resist film formed after the resist solution coating is removed by supplying an organic solvent, such as thinner, that dissolves the resist film to the region of a certain width from the edge of the wafer while the wafer is rotating, thereby removing the resist film.

[0010] In recent years, in order to form finer patterns, it has been proposed to form a coating film containing a metal (hereinafter referred to as a "metal-containing coating film") on a substrate such as a wafer.

[0011] When removing such a metal-containing coating film (film), simply using an organic solvent such as thinner that dissolves the coating film itself will result in the metal components contained in the dissolved coating film remaining on the peripheral surface of the wafer, adversely affecting subsequent processes and contributing to cross-contamination.

[0012] The technology disclosed herein effectively removes a metal-containing coating film from the peripheral portion of a substrate on which the metal-containing coating film is formed. The configuration of a substrate processing apparatus according to this embodiment will now be described with reference to the drawings. Note that, in this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] FIG. 1 is an explanatory diagram showing a schematic side view of the configuration of a coating film forming apparatus 1 configured as an example of a substrate processing apparatus, and FIG. 2 is an explanatory diagram showing the same configuration from a schematic plan view.

[0014] 1 and 2, the coating film forming apparatus 1 includes a spin chuck 11, which is a substrate holding unit that holds a wafer W horizontally by vacuum-adsorbing the central portion of the back surface of the wafer W, as a substrate, in a processing vessel 2. The spin chuck 11 is connected to a rotation drive mechanism 13 via a shaft 12, and is rotated around a vertical axis by the rotation drive mechanism 13.

[0015] A circular plate 14 is provided below the spin chuck 11 so as to surround the shaft portion 12 with a gap therebetween. Three through holes 15 are formed in the circular plate 14 in the circumferential direction, and lift pins 16 can be inserted into each of the through holes 15. These lift pins 16 are supported by a lift plate 17. The lift plate 17 can be raised and lowered by a lift mechanism 18. By raising and lowering the lift mechanism 18, the lift pins 16 can lift a wafer W released from suction from the spin chuck 11, or can place a wafer W received from a transfer device (not shown) on the spin chuck 11.

[0016] A cup body 20 is provided in the processing chamber 2 of the coating film forming apparatus 1 so as to surround the spin chuck 11. The cup body 20 is configured to receive waste liquid that is scattered or spilled from the rotating wafer W and to discharge the waste liquid to the outside of the coating film forming apparatus 1.

[0017] More specifically, the cup body 20 includes a mountain-shaped guide portion 21 having a mountain-shaped cross section and provided around the circular plate 14, and an annular vertical wall 22 extending downward from the outer peripheral edge of the mountain-shaped guide portion 21. The mountain-shaped guide portion 21 guides liquid spilled from the wafer W to the outside and below the wafer W.

[0018] A vertical cylindrical portion 23 is provided on the outside of the mountain-shaped guide portion 21 so as to surround the mountain-shaped guide portion 21, and an upper guide portion 24 extends obliquely inward and upward from the upper edge of the cylindrical portion 23. A plurality of openings 25 are provided in the circumferential direction of the upper guide portion 24. The upper end of the cylindrical portion 23 extends above the spin chuck 11, and an inclined body 23a extending inward and upward is provided on the inner edge of the end portion.

[0019] A ring-shaped liquid receiving portion 26 having a concave cross section is formed below the mountain-shaped guide portion 21 and the cylindrical portion 23 on the lower side of the cylindrical portion 23. A drainage path 27 is connected to the outer periphery of this liquid receiving portion 26. Two exhaust pipes 28 are provided on the inner periphery of the liquid receiving portion 26 relative to the drainage path 27.

[0020] 2, a rail 30 extending in the Y direction (left and right in FIG. 2) is formed on the negative X direction (downward in FIG. 2) side of the cup body 20. The rail 30 is located, for example, from the outside of the negative Y direction (leftward in FIG. 2) side of the cup body 20 to the outside of the positive Y direction (rightward in FIG. 2) side. A first arm 31 and a second arm 41 are provided on the rail 30 so as to be movable along the rail 30.

[0021] A resist solution supply nozzle 32 is supported on the first arm 31, and supplies a metal-containing resist solution, which is a coating solution containing a metal. The metal-containing resist solution is supplied to the resist solution supply nozzle 32 from a metal-containing resist solution supply source 33 via a supply path 34. The first arm 31 is movable along the Y direction on the rail 30 by a nozzle drive unit 35. This allows the resist solution supply nozzle 32 to move at least to above the center of the wafer W held by the spin chuck 11 within the cup body 20. The nozzle drive unit 35 also allows the first arm 31 to be raised and lowered, thereby adjusting the height of the resist solution supply nozzle 32.

[0022] The second arm 41 supports a processing liquid supply nozzle 42 as a first processing liquid supply unit that supplies a first processing liquid, such as an organic solvent such as PEGMEA (propylene glycol monomethyl ether acetate), which dissolves and removes the coating film (e.g., zirconium oxide film) formed by the metal-containing resist liquid, and a processing liquid supply nozzle 43 as a second processing liquid supply unit that supplies a second processing liquid, such as an acid thinner which is an acid processing liquid that dissolves the metal in the metal-containing coating film.

[0023] In this embodiment, the processing liquid supply nozzle 42 also serves as a third processing liquid supply unit. That is, after supplying the second processing liquid, the processing liquid supply nozzle 42 supplies a third processing liquid, such as PEGMEA, for cleaning the surface of the wafer W. In other words, the processing liquid supply nozzle 42 serves as both a first processing liquid supply unit and a third processing liquid supply unit. In this example, the first processing liquid and the third processing liquid are the same solvent PG, PEGMEA. The first processing liquid and the third processing liquid, solvent PG, are supplied to the processing liquid supply nozzle 42 from a supply source 44 via a supply path 45. The second processing liquid, acid thinner, is supplied to the processing liquid supply nozzle 43 from an acid thinner supply source 46 via a supply path 47.

[0024] The second arm 41 is movable on the rail 30 by the nozzle drive unit 48. This allows the processing liquid supply nozzles 42, 43 to move from at least the edge to a certain width region above the wafer W in the cup body 20. The nozzle drive unit 48 also allows the second arm 41 to be raised and lowered, allowing the height of the processing liquid supply nozzles 42, 43 to be adjusted.

[0025] 1 , a first rear surface nozzle 51 serving as a fourth processing liquid supply unit for supplying the above-mentioned PEGMEA and a second rear surface nozzle 52 serving as a fifth processing liquid supply unit for supplying acid thinner are disposed on the inner circumferential side of the mountain-shaped guide portion 21. The supply direction (discharge direction) of the liquid from the first rear surface nozzle 51 and the second rear surface nozzle 52 is directed obliquely outward from the lower surface side of the peripheral portion of the wafer W. The first rear surface nozzle 51 is located closer to the center of the wafer W than the second rear surface nozzle 52. In this embodiment, the first rear surface nozzle 51 serves both as a fourth processing liquid supply unit and a sixth processing liquid supply unit, and in this example, the fourth processing liquid and the sixth processing liquid are the same solvent PG, PEGMEA.

[0026] The above-described coating film forming apparatus 1 is provided with at least one control unit 100 as shown in FIG. 1 . The control unit 100 processes computer-executable instructions that cause the coating film forming apparatus 1 to perform the various processes described herein. The control unit 100 may be configured to control each element of the coating film forming apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 100 may be included in the coating film forming apparatus 1. The control unit 100 may include a processing unit, a memory unit, and a communication interface. The control unit 100 is realized, for example, by a computer. The control unit 100 may be one or more circuits, or may be provided as an integrated unit or partially separated. The control unit 100 may be configured to read, from a memory unit, a program that provides logic or routines that enable various control operations to be performed, and to execute the read program to perform various control operations. This makes it possible to control, for example, the rotation speed of the spin chuck 11, the discharge positions, discharge flow rates, and discharge times of the processing liquid supply nozzles 42 and 43, and the discharge flow rates and discharge times of the liquids from the first back surface nozzle 51 and the second back surface nozzle 52. The functions performed by the processing unit described in this disclosure may be implemented in circuitry or processing circuitry, including general-purpose processors, application-specific processors, integrated circuits, ASICs (Application Specific Integrated Circuits), CPUs (Central Processing Units), conventional circuitry, and / or combinations thereof, programmed to perform the described functions. A processor may be considered a circuit or processing circuit including transistors and other circuitry. The processor may also be a programmed processor that executes a program stored in a memory unit. This program (computer program product) may be stored in the memory unit in advance or may be acquired via a medium when needed.The medium may be any of various computer-readable storage media, such as a removable storage medium such as a memory card, optical disc, or HDD (Hard Disk Drive), and the program may be provided in a form stored on the storage medium. The medium may also be a communication line connected to the communication interface, and the program may be distributed by a remote server device or the like. The storage medium may be temporary or non-temporary. The acquired program is stored in the storage unit and is read from the storage unit and executed by the processing unit. The storage unit may include a storage medium such as a RAM (Random Access Memory), a ROM (Read Only Memory), an EEPROM (Electronically Erasable Programmable Read Only Memory), a HDD (Hard Disk Drive), or an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating film forming apparatus 1 via a communication line such as a LAN (Local Area Network). In the present disclosure, a circuit, unit, or means is hardware programmed to realize the described function or hardware configured to execute the function. The hardware may be any hardware described in the present disclosure or any hardware known to be programmed to realize or execute the described function. If the hardware is a processor considered to be a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0027] <Substrate Processing Method> Next, a substrate processing method using the above-described coating film forming apparatus 1 will be described. In this example, a method for forming and processing a zirconium oxide film as a metal-containing coating film will be described. The substrate processing method is performed, for example, in response to instructions from a control unit 100 of the substrate processing apparatus 1, which will be described later.

[0028] 3( a), a metal-containing resist solution for forming a zirconium oxide film is supplied from above the center of the wafer W held on the spin chuck 11, and the wafer W is rotated to spread the resist solution over the entire surface of the wafer W, forming a metal-containing resist film R. When forming the metal-containing resist film R by such spin coating, the rotation speed is, for example, 1400 rpm. As a result, the metal-containing resist film R is formed up to the edge Wt of the side surface of the wafer W, as shown in FIGS. 3( b) and 3(c).

[0029] <First Step> After the metal-containing resist film R is formed on the wafer W, the processing liquid supply nozzle 42 moves to the vicinity of the edge of the wafer W, as shown in FIG. 4( a). While the wafer W is being rotated, a solvent PG for the metal-containing resist solution is supplied to a region of a certain width A in the radial direction from the edge Wt of the wafer W, as also shown in FIGS. 4( b) and 4(c), to remove the metal-containing resist film R in a circular pattern from the region of width A in the metal-containing resist film R. In this example, PEG-MEA is used as the solvent PG. The rotation speed of the wafer W in the first step is, for example, 1000 rpm.

[0030] While the solvent PG is being supplied from the processing liquid supply nozzle 42 to the area of ​​width A on the front surface of the wafer W, as shown in Fig. 4(b), the solvent PG is also supplied from the first rear surface nozzle 51 to the peripheral portion of the rear surface of the wafer W. In this example, the solvent PG is PEG-MEA.

[0031] 5( a), processing liquid supply nozzle 43 moves to the vicinity of the edge of wafer W, replacing processing liquid supply nozzle 42. Then, while wafer W is rotating, processing liquid supply nozzle 43 moves from edge Wt of wafer W toward center P of wafer W, as also shown in FIGS. 5( b) and 5(c), to supply processing liquid AT that dissolves metal in metal-containing resist film R to an area of ​​a certain radial width B. The rotation speed of wafer W in the second step is, for example, 800 rpm.

[0032] While the processing liquid AT is being supplied from the processing liquid supply nozzle 43 to an area of ​​width B on the surface of the wafer W, as shown in Figure 5 (b), the processing liquid ATW is also supplied from the second back surface nozzle 52 to the peripheral portion of the back surface of the wafer W.

[0033] 6( a) and 6(b), while the wafer W continues to rotate, the processing liquid supply nozzle 43 moves from the center P of the wafer W toward the edge Wt of the wafer W, supplying the processing liquid AT that dissolves the metal in the metal-containing resist film R to an area of ​​a certain radial width B. The rotation speed of the wafer W in the third step is, for example, 800 rpm.

[0034] At this time, while the processing liquid AT is being supplied from the processing liquid supply nozzle 43 to an area of ​​width B on the surface of the wafer W, as shown in Figure 6 (b), the processing liquid ATW is also being supplied from the second back surface nozzle 52 to the peripheral portion of the back surface of the wafer W.

[0035] By the second and third steps described above, even if there are any metal components remaining in the region of width B of the wafer W, these are dissolved and removed. In this example, as described above, for example, acid thinner is used as the processing liquid AT for dissolving metals. Furthermore, the processing liquid ATW supplied from the second back surface nozzle 52 is the same processing liquid as the processing liquid AT, but its concentration may be lower than that of the processing liquid AT, or it may be the same concentration as the processing liquid AT. The rotation speed of the wafer W in each of the second and third steps is, for example, 800 rpm.

[0036] <Fourth Step> Thereafter, as shown in FIG. 7( a), the processing liquid supply nozzle 42 is again moved to the vicinity of the edge of the wafer W, replacing the processing liquid supply nozzle 43. Then, while the wafer W is being rotated, as also shown in FIGS. 7( b) and 7(c), a solvent PG for the metal-containing resist liquid is supplied to an area of ​​a certain width C in the radial direction from the edge Wt of the wafer W. This washes away the acid thinner remaining in the area of ​​width C. In this example, the solvent PG is the aforementioned PEG-MEA. The rotation speed of the wafer W in the third step is, for example, 1000 rpm.

[0037] While the solvent PG is being supplied from the processing liquid supply nozzle 42 to an area of ​​width C on the surface of the wafer W, the solvent PG is also being supplied from the first rear surface nozzle 51 to the peripheral portion of the rear surface of the wafer W, as shown in FIG. 7(b).

[0038] The relationship between the lengths of widths A, B, and C is A>C>B. According to the substrate processing method of the embodiment described above, in the first step, the metal-containing resist film R formed on the surface of the wafer W is removed in a circular pattern using the solvent PG in a region of width A in the radial direction from the edge Wt of the wafer W. Then, in the second and third steps, the surface of the wafer W in a region of width B narrower than width A is cleaned using the processing liquid AT (acid thinner). Therefore, even if metal components remain in the region of width B, they are dissolved and removed. Then, in the fourth step, the surface of the wafer W in a region of width C wider than width B and narrower than width A is cleaned using the solvent PG, and the processing liquid AT (acid thinner) remaining in the region of width C is washed away.

[0039] Therefore, according to the embodiment, the peripheral portion of the metal-containing resist film R can be suitably removed, and the occurrence of defects in the metal-containing coating and the underlying film on the substrate surface can be suppressed when removing the peripheral portion of the metal-containing coating.

[0040] 6(b), even during scan-out in the third step, when the processing liquid AT is being supplied from the processing liquid supply nozzle 43 to the front surface side of the wafer W, the processing liquid ATW is also supplied from the second back surface nozzle 52 to the peripheral portion of the back surface of the wafer W. Therefore, even if the solvent PG washed away from the front surface of the wafer W by the processing liquid AT tries to get around to the back surface of the wafer W, it is prevented from doing so by the processing liquid ATW from the processing liquid supply nozzle 43 and does not reach the front surface of the wafer W.

[0041] In the past, no processing liquid was supplied from the backside during the scan-out in the third step, because supplying unnecessary processing liquid AT to the backside of the wafer W at the end of processing would cause unnecessary liquid splashing and would save processing liquid.

[0042] However, it has been confirmed that, even during scan-out of the processing liquid supply nozzle 43 as in the embodiment, supplying the processing liquid ATW from the second back surface nozzle 52 to the peripheral portion of the back surface of the wafer W reduces metal components remaining on the bevel and back surface of the wafer W, and metal components that tend to move around from the front side to the back surface of the wafer W. Note that in the first and fourth steps, during scan-in, the first back surface nozzle 51, which also serves as the fourth processing liquid supply unit and the sixth processing liquid supply unit, does not necessarily supply the solvent PG to the back surface of the wafer W. This prevents unnecessary liquid splashing and saves processing liquid.

[0043] 8 shows the total amount of residual metal in each of the following cases: (a) no cleaning with the processing liquid AT (acid thinner); (b) cleaning only the back side of the wafer W with the processing liquid AT (acid thinner) and not the front side; (c) cleaning both the front and back side of the wafer W with the processing liquid AT (acid thinner) but not cleaning the back side of the wafer W with the processing liquid AT (acid thinner) when scanning out the processing liquid supply nozzle 43; and (d) cleaning both the front and back side of the wafer W with the processing liquid AT (acid thinner) and further cleaning the back side of the wafer W with the processing liquid AT (acid thinner) when scanning out the processing liquid supply nozzle 43. In (a) to (d), the left bar graphs show the total amount of residual metal in the bevel portion, and the right bar graphs show the total amount of residual metal in the back side of the wafer W. The area of ​​the bevel is 7.3 cm ２ The area of ​​the back surface of the wafer W is 706.5 cm ２ is.

[0044] As can be seen from (b) and (c) of this graph, it was found that cleaning the front side of the wafer W with the processing liquid AT (acid thinner) increases the amount of residual metal components on the back side. As can be seen from point (d), when both the front and back sides of the wafer W were cleaned with the processing liquid AT (acid thinner), and when the back side of the wafer W was also cleaned with the processing liquid AT (acid thinner) during scan-out of the processing liquid supply nozzle 43, it was confirmed that the amount of residual metal components was the smallest on both the bevel portion and the back side of the wafer W. In other words, by performing a so-called back rinse by cleaning the back side of the wafer W with the processing liquid AT (acid thinner) during scan-out of the processing liquid supply nozzle 43, it is possible to prevent metal components contained in the dissolved coating film from remaining on the peripheral front side and back side of the wafer W, which could adversely affect subsequent processes or cause cross-contamination.

[0045] In the second and third steps described above, the rotation speed of the wafer W is set to 800 rpm, which is lower than the rotation speed used in conventional processes of this type. This not only prevents the acid, which dries quickly, from drying out, but also lengthens the residence time of the processing solution AT on the surface of the wafer W, thereby enabling the acid to be properly removed from within the wafer W. More specifically, it has been found that a rotation speed of 1500 rpm or higher reduces cleaning performance, and that with acetic acid-based acids, which dry quickly, metal components (e.g., Sn) in the coating film remain on the bevel portion. Therefore, in consideration of these points, it is preferable that the rotation speed of the wafer W be lower than 1500 rpm, for example, between 400 and 1000 rpm, when cleaning with the processing solution AT in the second and third steps.

[0046] In the embodiment described above, the processing liquid ATW supplied from the second rear surface nozzle 52 is the same processing liquid as the processing liquid AT, but has a lower concentration than the processing liquid AT supplied to the front surface side of the wafer W. For example, it can be proposed to use a processing liquid of 70 to 50% acetic acid + solvent as the processing liquid AT supplied to the front surface side, and a processing liquid of 40% acetic acid + solvent as the processing liquid ATW supplied to the rear surface side, which has a lower concentration than that.

[0047] By making the concentration of the processing liquid supplied to the backside of the wafer W lower than the concentration of the processing liquid supplied to the frontside of the wafer W in this way, even if the processing liquid ATW supplied to the backside of the wafer W flows around to the frontside, the concentration of the processing liquid AT on the frontside of the wafer W does not increase significantly, resulting in less impact on the metal-containing resist film R. Furthermore, because the concentration is low, there is no risk of increasing the cut width for the metal-containing resist film R. Conversely, even if the processing liquid AT on the front side of the wafer W mixes with the processing liquid ATW on the backside, the concentration does not increase significantly, and damage to the wafer W can be suppressed.

[0048] As can be seen from Figures 5(b) and 6(b), while the processing liquid AT is being supplied from the front side of the wafer W and the processing liquid ATW is being supplied from the back side of the wafer W simultaneously, as shown in these figures, the supplied processing liquids AT and ATW collide at the bevel portion of the wafer W and in its vicinity, and an interface K between the two processing liquids is generated at the point of collision.

[0049] Regarding this interface K, for example, by scanning out the processing liquid supply nozzle 43 supplying the processing liquid AT last, it is moved from above to below the edge Wt of the wafer W, and the edge Wt is finish-cleaned with a liquid having a high concentration of processing liquid AT, and the processing liquid ATW is also supplied from the back surface, so that it is possible to control the collision position of the processing liquid, i.e., the position of the interface K, so as to prevent particles from adhering to the back surface of the wafer W. In addition, by directing the interface K, which is the collision position of these processing liquids, downward, an effect is obtained in that these processing liquids can be easily discharged.

[0050] 6B , even if the interface K is located below the edge Wt, since the processing liquid ATW is supplied from the back surface side, the washed-out metal components do not remain on the bevel portion of the wafer W. The position of the interface K can be controlled by adjusting, for example, one or a combination of two or more selected from the supply position of the processing liquid supply nozzle 43, the supply amount of the processing liquid AT from the processing liquid supply nozzle 43, the supply amount of the processing liquid ATW supplied from the second back surface nozzle 52, and the rotation speed of the wafer W.

[0051] In the above-described process, the length relationship between width A, width B, and width C is A>C>B for the following reason: In the first step, when the region of width A in the metal-containing resist film R is dissolved and removed by the solvent PG, metal components in the dissolved film components may remain on the surface of the wafer W after film removal. If this is left as it is, as mentioned above, it may adversely affect subsequent processes or be a cause of cross-contamination.

[0052] Therefore, it is necessary to remove the metal components that may remain on the surface of the wafer W after film removal. Therefore, in the second step, a processing liquid AT for dissolving the metal components, such as an acid thinner, which is a mixture of an acidic agent and a thinner, is supplied to the surface of the wafer W after film removal. Then, in the third step, a solvent PG is supplied to wash away the processing liquid AT.

[0053] Here, the width B of the region to which the processing liquid AT is supplied in the second step is smaller than the width A of the region to which the solvent PG is supplied in the first step because if width B were equal to width A, the processing liquid AT would penetrate into the metal-containing resist film R from the interface of the metal-containing resist film R removed by the solvent PG, and there is a risk of corroding the metal-containing resist film R.

[0054] Furthermore, the width C of the region to which the solvent PG is supplied in the third step is larger than the width B of the region to which the processing liquid AT is supplied in the second step in order to completely wash away the processing liquid AT supplied in the second step. The width C of the region to which the solvent PG is supplied in the third step is smaller than the width A of the region to which the solvent PG is supplied in the first step in order to prevent the washed-out processing liquid AT from penetrating from the interface of the metal-containing resist film R and to prevent the metal components in the metal-containing resist film R from leaking out. From the above, in the above-described process, the length relationship between width A, width B, and width C is A>C>B.

[0055] 9 , the discharge angles of the processing liquid supply nozzles 42, 43 relative to the wafer W in a plan view, i.e., the angle θ1 relative to the tangent to the wafer W, are described below. The processing liquid supply nozzle 42 that supplies the solvent PG is set to, for example, 8.5 degrees. On the other hand, the processing liquid supply nozzle 43 that supplies the processing liquid AT for dissolving metal components has θ1 set to, for example, 30 degrees. That is, the processing liquid supply nozzle 43 that supplies the processing liquid AT is directed radially outward relative to the processing liquid supply nozzle 42 that supplies the solvent PG. This is to prevent the supplied processing liquid AT from splashing or scattering inward, and also to allow the solvent PG to spread further inward when the processing liquid AT is subsequently washed away with the solvent PG.

[0056] The discharge angle of the processing liquid supply nozzles 42, 43 with respect to the wafer W in a side view, i.e., the depression angle θ2, is set to, for example, 45 degrees for both the processing liquid supply nozzles 42, 43. By discharging the processing liquid at an angle in this manner, the supplied liquid is prevented from heading toward the center of the wafer W.

[0057] In this way, the processing liquid supply nozzle 43 that supplies the processing liquid AT is directed further outward than the processing liquid supply nozzle 42 that supplies the solvent PG, so that the processing liquid AT supplied from the processing liquid supply nozzle 43 is prevented from moving toward the center of the wafer W, and the solvent PG that is supplied in the subsequent third step can thoroughly clean the processing liquid AT that was previously supplied.

[0058] In the above embodiment, the solvent PG used in the first step and the solvent PG used in the fourth step were the same solvent. However, since the purpose of the solvent supplied in the fourth step is to wash away the processing liquid AT supplied in the second and third steps, the liquid supplied in the fourth step may be another solvent. For example, it may be pure water. In the above example, since the solvent PG used in the first step and the solvent PG used in the fourth step were the same solvent, a common processing liquid supply nozzle 42 could be used for supplying the solvent. However, if the liquid supplied in the fourth step is a liquid different from the solvent PG used in the first step, such as pure water, different nozzles must be used for supplying the solvent. In other words, the supply nozzles serving as the first processing liquid supply unit, second processing liquid supply unit, and third processing liquid supply unit must be separate.

[0059] In the first and fourth steps, the solvent PG is also supplied from the first back surface nozzle 51 on the back surface side of the wafer W, and in the second and third steps, the processing liquid ATW is also supplied from the second back surface nozzle 52. The liquid supplied from each of these back surface nozzles is the same liquid as the liquid supplied from the front surface side of the wafer W, although the concentration differs. The purpose of this is to prevent the liquid supplied to the front surface side of the wafer W from flowing around to the back surface side of the wafer W. Therefore, the positions of the first back surface nozzle 51 and the second back surface nozzle 52 arranged on the back surface side do not need to be set as strictly as those of the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W.

[0060] However, from the viewpoint of preventing the liquid supplied to the front surface side of the wafer W from flowing around to the rear surface side of the wafer W, it is preferable that the first rear surface nozzle 51 and the second rear surface nozzle 52 arranged on the rear surface side are arranged at positions facing the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W across the wafer W. In this case, it is preferable that the radial positions of the first rear surface nozzle 51 and the second rear surface nozzle 52 arranged on the rear surface side are more inward than the processing liquid supply nozzles 42 and 43 arranged on the front surface side of the wafer W, i.e., closer to the center of the wafer W.

[0061] 11 is a schematic plan view illustrating the arrangement of processing liquid supply nozzles 61, 62, and 63, which are separate units serving as the first processing liquid supply unit, the second processing liquid supply unit, and the third processing liquid supply unit, which are arranged on the front surface side of the wafer W. FIG. 12 is a schematic plan view illustrating the arrangement of back surface nozzles 71, 72, and 73, which are arranged on the back surface side of the wafer W. For convenience of illustration, the front surface side processing liquid supply nozzles 61, 62, and 63 are not shown in FIG.

[0062] 11 and 12, the rear surface nozzles 71, 72, and 73 arranged on the rear surface side are positioned opposite the processing liquid supply nozzles 61, 62, and 63 arranged on the front surface side with the wafer W in between, but the rear surface nozzles 71, 72, and 73 are positioned in the radial direction closer to the center P of the wafer W than the processing liquid supply nozzles 61, 62, and 63 arranged on the front surface side. This makes it possible to more reliably prevent the liquid supplied from the processing liquid supply nozzles 61, 62, and 63 to the front surface side of the wafer W from flowing around to the rear surface side of the wafer W.

[0063] In the above-described embodiment, the substrate processing is tentatively completed in the order of the first step, the second step, the third step, and the fourth step. However, this is not limiting. For example, after the first step, the second step, the third step, and the fourth step, the second, the third step, and the fourth step may be executed again to complete the processing. In other words, the second, the third step, and the fourth step may be repeatedly executed. In this way, appropriate processing can be performed according to the remaining state of the processing liquid AT, such as metal components and acid thinner, remaining on the substrate surface.

[0064] Furthermore, the above-described coating film forming apparatus 1 is configured to perform the process of forming a metal-containing resist film R on the wafer W and the first, second, third, and fourth steps of removing the peripheral portion of the metal-containing resist film R within the same apparatus, but this is not limiting, and the process of forming the metal-containing resist film R and the first to fourth steps may be performed within separate apparatuses or modules.

[0065] In this disclosure, a metal-containing resist refers to a resist that contains a metal as a constituent component of the resist, and does not refer to a resist that contains a metal only as an impurity. The metal-containing resist is formed on the surface of a substrate, and the resist that is the material for the resist film contains a metal (shown as M in FIG. 13) bonded to a ligand (shown as L in the figure) and a hydroxyl group, as shown on the left side of FIG.

[0066] The metal (M in the figure) that is a component of this resist may be selected from the group consisting of, for example, tin (Sn), tungsten (W), hafnium (Hf), zirconium (Zr), indium (In), tellurium (Te), antimony (Sb), nickel (Ni), cobalt (Co), titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), bismuth (Bi), iodine (I), germanium (Ge), and combinations thereof, and is not limited to the metal materials described.

[0067] The ligand may be an organic compound such as ethyl, i-propyl, n-propyl, t-butyl, i-butyl, n-butyl, sec-butyl, n-pentyl, i-pentyl, t-pentyl, sec-pentyl, or alkyl, and the organic compound may be partially substituted with a halogen element such as fluorine, bromine, or iodine. The ligand may also be a moiety selected from the group consisting of the mixtures described above.

[0068] In metal-containing resists, after film formation and before the formation of a resist pattern, mainly through exposure, the bond between the metal M and the ligand L is severed (i.e., detachment of the ligand L), followed by bonding between the metal M and the oxygen atoms constituting the hydroxyl groups (rebonding of the metal M), and a condensation reaction between the hydroxyl groups occurs. As this series of reactions progresses, each metal M is present in the resist pattern as an oxide, as shown on the right side of Figure 13. The aggregated metal oxides are bonded to each other via oxygen atoms, and therefore exist in the resist pattern as stronger compounds than before they became oxides.

[0069] The above explanation is an example showing the state of the negative development process, and in the case of positive development, there is also a method of making use of the polarity change due to exposure to make the film hydrophilic after exposure and then carrying out alkaline development or the like.

[0070] The present disclosure is not limited to the components of the resist described above, and other components may be used, and the reaction of the metal-containing resist is not limited to the above. Furthermore, the resist film may be formed by, for example, spin coating, chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like.

[0071] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0072] The following configurations also fall within the technical scope of the present disclosure: (1) A processing apparatus for processing a substrate, comprising: a substrate holding unit that holds and rotates a substrate on which a coating film of a metal-containing resist has been formed, a first processing liquid supply unit that supplies a first processing liquid to a front surface of the substrate, a second processing liquid supply unit that supplies a second processing liquid to the front surface of the substrate, a third processing liquid supply unit that supplies a third processing liquid to the front surface of the substrate, a fourth processing liquid supply unit that supplies a fourth processing liquid to a rear surface of the substrate, a fifth processing liquid supply unit that supplies a fifth processing liquid to the rear surface of the substrate, a sixth processing liquid supply unit that supplies a sixth processing liquid to the rear surface of the substrate, and a control unit, wherein the control unit performs a first step of supplying the first processing liquid from the first processing liquid supply unit and removing the coating film in a region of a predetermined width from an edge of the substrate while the substrate is rotated, and during the first step, supplies a fourth processing liquid from the fourth processing liquid supply unit to the rear surface of the substrate, a second step of supplying a second processing liquid to the portion of the substrate edge from which the coating film has been removed while moving the second processing liquid supply unit from the edge of the substrate toward the center of the substrate while rotating the substrate after the first step, supplying a fifth processing liquid from a fifth processing liquid supply unit to the backside of the substrate during the second step, a third step of supplying a second processing liquid while moving the second processing liquid supply unit from the center toward the base end while rotating the substrate after the second step, supplying a fifth processing liquid from the fifth processing liquid supply unit during the third step, a fourth step of discharging a first processing liquid from the third processing liquid supply unit to a region of a predetermined width from the edge of the substrate while rotating the substrate after the third step, and discharging the sixth processing liquid from the sixth processing liquid supply unit to the backside of the substrate during the fourth step. (2) The substrate processing apparatus according to (1), wherein the first processing liquid and the third processing liquid are the same processing liquid. (3) The substrate processing apparatus according to claim 1, wherein the fourth processing liquid and the sixth processing liquid are the same processing liquid. (4) The substrate processing apparatus according to any one of (1) to (3), wherein the first processing liquid, the third processing liquid, the fourth processing liquid, and the sixth processing liquid are organic solvents.(5) The substrate processing apparatus according to any one of claims (1) to (3), wherein the second processing liquid and the fifth processing liquid are acid processing liquids that dissolve the metal. (6) The substrate processing apparatus according to (5), wherein the concentration of the fifth processing liquid is lower than the concentration of the second processing liquid. (7) The substrate processing apparatus according to any one of (1) to (3), wherein at least the first processing liquid supply unit and the third processing liquid supply unit, or the fourth processing liquid supply unit and the sixth processing liquid supply unit, are shared. (8) The substrate processing apparatus according to (1), wherein the second processing liquid supply unit discharges the second processing liquid on the substrate for a longer time during the second step and the third step than during other steps. (9) The substrate processing apparatus according to claim 1, wherein the rotation speed of the substrate is lower during the second step and the third step than during other steps. (10) The substrate processing apparatus according to (1), wherein no processing liquid is supplied from the fourth processing liquid supply unit and the sixth processing liquid supply unit during the first step and the fourth step. (11) The substrate processing apparatus according to (1), wherein in the first step, a first processing liquid is supplied to a first width region from an edge of the substrate, in the second and third steps, a second processing liquid is supplied to a second width region narrower than the first width region, and in the fourth step, a third processing liquid for washing away the second processing liquid is supplied to a third width region from the edge of the substrate narrower than the first width region and wider than the second width region. (12) The substrate processing apparatus according to (11), wherein in the third step, a fifth processing liquid is supplied from the fifth processing liquid supply unit to a back surface of the substrate.(13) A substrate processing method for processing a substrate, comprising: a first step of supplying a first processing liquid from a first nozzle to a region of a predetermined width from an edge of the substrate while rotating the substrate, thereby removing a coating film of a metal-containing resist in the region; a second step of supplying a second processing liquid to the portion from which the coating film has been removed while moving a second nozzle from the edge of the substrate toward the center of the substrate after the first step; supplying another processing liquid to a back surface of the substrate during the second step; and a third step of supplying the second processing liquid to a back surface of the substrate during the third step while moving the second nozzle from the center toward a base end while rotating the substrate; and controlling a position of an interface where the second processing liquid and the other processing liquid collide by adjusting one or a combination of two or more selected from a position of the second nozzle, a supply amount of the second processing liquid, a supply amount of the other processing liquid, and a rotation speed of the substrate. (14) A method for processing a substrate, comprising: a first step of supplying a first processing liquid to a substrate having a coating film of a metal-containing resist formed thereon while holding and rotating the substrate, to remove the coating film in a region of a predetermined width from an edge of the substrate; a second step of sequentially supplying a second processing liquid to the portion from which the coating film has been removed from the edge toward the center of the substrate while rotating the substrate after the first step; a third step of sequentially supplying the second processing liquid from the center toward the edge of the substrate while rotating the substrate after the second step; and a fourth step of sequentially ejecting the second processing liquid from the center of the substrate toward the edge of the substrate while rotating the substrate after the third step, wherein the second processing liquid is ejected onto a back side of the substrate during the fourth step. (15) The substrate processing method according to (14), wherein a processing liquid having a lower concentration than the second processing liquid is ejected onto the back side of the substrate during the fourth step.

[0073] The present disclosure can also propose the following configuration: (1A) A substrate processing apparatus for processing a substrate, comprising: a substrate holding unit that holds and rotates a substrate having a metal-containing coating film formed thereon, a first processing liquid supply unit that supplies a first processing liquid to a surface of the substrate, a second processing liquid supply unit that supplies a second processing liquid to the surface of the substrate, a third processing liquid supply unit that supplies a third processing liquid to the surface of the substrate, and a control unit, wherein the control unit performs a first step of supplying the first processing liquid from the first processing liquid supply unit to a first width region from an edge of the substrate while rotating the substrate, thereby removing the coating film, and a second step of supplying the second processing liquid from the second processing liquid supply unit to a second width region from the edge of the substrate, the second width region being narrower than the first width region, while rotating the substrate, after the first step, thereby removing the metal remaining in the second width region. a third step of, after the second step, supplying the third processing liquid from the third processing liquid supply unit to a third width region from an edge of the substrate, the third width region being narrower than the first width region and wider than the second width region, while rotating the substrate, to wash away the second processing liquid remaining in the third width region. (2A) The substrate processing apparatus according to (1A), wherein the first processing liquid and the third processing liquid are the same processing liquid. (3A) The substrate processing apparatus according to (1A), wherein the first processing liquid and the third processing liquid are an organic solvent. (4A) The substrate processing apparatus according to (2A), wherein the first processing liquid supply unit and the third processing liquid supply unit are shared. (5A) The substrate processing apparatus according to any one of (1A) to (4A), wherein the second processing liquid is an acid processing liquid that dissolves the metal. (6A) The substrate processing apparatus according to (1A), wherein the first processing liquid is an organic solvent and the third processing liquid is pure water. (7A) The substrate processing apparatus according to (6A), wherein the second processing liquid is an acid processing liquid that dissolves the metal. (8A) The substrate processing apparatus according to (6A), further comprising a coating liquid supply unit that supplies a coating liquid containing a metal to the substrate held by the substrate holding unit, and the control unit is configured to execute, before the first step, a step of supplying the coating liquid from the coating liquid supply unit to the surface of the substrate held by the substrate holding unit to form the coating film.(9A) The substrate processing apparatus of (7A), further comprising a fourth processing liquid supply unit that supplies a second processing liquid to the backside of the substrate, wherein, when the second processing liquid is being supplied from the second processing liquid supply unit in the second step, the fourth processing liquid supply unit supplies the second processing liquid. (10A) The substrate processing apparatus of (9A), further comprising a fifth processing liquid supply unit that supplies a third processing liquid to the backside of the substrate, wherein, when the third processing liquid is being supplied from the third processing liquid supply unit in the third step, the fifth processing liquid supply unit supplies the third processing liquid. (11A) The substrate processing apparatus of (1A), further comprising: a substrate processing apparatus that supplies a substrate with a rotation speed that is faster than the rotation speeds of the substrate in the first step and the third step; (12A) The substrate processing apparatus of (1A), further comprising: a nozzle serving as the second processing liquid supply unit; a nozzle serving as the first processing liquid supply unit; a nozzle serving as the first processing liquid supply unit; a nozzle serving as the second ... (13A) The substrate processing apparatus according to (12A), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (14A) The substrate processing apparatus according to (1A), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (15A) The substrate processing apparatus according to (1A), wherein the control unit executes the second step and the third step again after executing the third step. (16A) A substrate processing method for processing a substrate, comprising: a first step of supplying a first processing liquid from an edge of the substrate to a first width region while rotating the substrate, thereby removing a coating film in the first width region; a second step of supplying a second processing liquid from the edge of the substrate to a second width region narrower than the first width region while rotating the substrate, after the first step, thereby removing metal components remaining in the second width region; and a third step of supplying a third processing liquid from the edge of the substrate to a third width region narrower than the first width region and wider than the second width region while rotating the substrate, after the second step, thereby washing away the second processing liquid remaining in the third width region.(17A) The substrate processing method according to (16A), wherein the first processing liquid and the third processing liquid are the same processing liquid. (18A) The substrate processing method according to (16A), wherein the first processing liquid and the third processing liquid are organic solvents. (19A) The substrate processing method according to any one of (16A) to (18A), wherein the second processing liquid is an acidic processing liquid that dissolves the metal component. (20A) The substrate processing method according to (16A), wherein the first processing liquid is an organic solvent and the third processing liquid is pure water. (21A) The substrate processing method according to (20A), wherein the second processing liquid is an acidic processing liquid that dissolves the metal component. (22A) The substrate processing method according to (21A), wherein the second processing liquid is supplied from the backside of the substrate when the second processing liquid is being supplied in the second step. (23A) The substrate processing method according to (22A), wherein the third processing liquid is supplied from the backside of the substrate when the third processing liquid is being supplied in the third step. (24A) The substrate processing method according to (16A), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first and third steps. (25A) The substrate processing method according to (16A), wherein a discharge angle with respect to a tangent to the substrate in a plan view when the second processing liquid is supplied from a nozzle is directed radially outward more than a discharge angle when the first processing liquid is supplied from a nozzle. (26A) The substrate processing method according to (16A), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (27A) The substrate processing method according to (25A), wherein the rotation speed of the substrate in the second step is faster than the rotation speed of the substrate in the first step. (28A) A substrate processing method according to (16A), in which after the third step is performed, the second step and the third step are performed again.

[0074] The items described in (1) to (15) above and the items described in (1A) to (28A) above may be combined to the extent that no contradiction or inconvenience occurs.

[0075] REFERENCE SIGNS LIST 1 Coating film forming apparatus 2 Processing vessel 11 Spin chuck 42 Processing liquid supply nozzle 43 Processing liquid supply nozzle 51 First rear surface nozzle 52 Second rear surface nozzle 100 Control unit P Center R Metal-containing resist film W Wafer Wt Edge

Claims

1. A processing apparatus for processing a substrate, comprising: a substrate holding unit that holds and rotates a substrate on which a coating film of a metal-containing resist has been formed; a first processing liquid supply unit that supplies a first processing liquid to a front surface of the substrate; a second processing liquid supply unit that supplies a second processing liquid to the front surface of the substrate; a third processing liquid supply unit that supplies a third processing liquid to the front surface of the substrate; a fourth processing liquid supply unit that supplies a fourth processing liquid to a rear surface of the substrate; a fifth processing liquid supply unit that supplies a fifth processing liquid to the rear surface of the substrate; a sixth processing liquid supply unit that supplies a sixth processing liquid to the rear surface of the substrate; and a control unit, wherein the control unit performs a first step of supplying a first processing liquid from the first processing liquid supply unit while the substrate is rotated, and removing the coating film in a region of a predetermined width from an edge of the substrate; and during the first step, supplying a fourth processing liquid from the fourth processing liquid supply unit to the rear surface of the substrate, a second step of supplying a second processing liquid to the portion of the substrate edge from which the coating film has been removed while rotating the substrate after the first step, by moving the second processing liquid supply unit from the edge of the substrate toward the center of the substrate; supplying a fifth processing liquid from a fifth processing liquid supply unit to the backside of the substrate during the second step; a third step of supplying a second processing liquid while moving the second processing liquid supply unit from the center toward the base end while rotating the substrate after the second step; supplying a fifth processing liquid from the fifth processing liquid supply unit to the backside of the substrate during the third step; a fourth step of discharging the third processing liquid from the third processing liquid supply unit to a region of a predetermined width from the edge of the substrate while rotating the substrate after the third step; and supplying the sixth processing liquid from the sixth processing liquid supply unit to the backside of the substrate during the fourth step.

2. The substrate processing apparatus according to claim 1, wherein the first processing liquid and the third processing liquid are the same processing liquid.

3. The substrate processing apparatus according to claim 1, wherein the fourth processing liquid and the sixth processing liquid are the same processing liquid.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the first processing liquid, the third processing liquid, the fourth processing liquid and the sixth processing liquid are organic solvents.

5. The substrate processing apparatus according to any one of claims 1 to 3, wherein the second processing liquid and the fifth processing liquid are acid processing liquids that dissolve the metal.

6. The substrate processing apparatus according to claim 5, wherein the concentration of the fifth processing liquid is lower than the concentration of the second processing liquid.

7. A substrate processing apparatus according to any one of claims 1 to 3, wherein at least the first processing liquid supply unit and the third processing liquid supply unit, or the fourth processing liquid supply unit and the sixth processing liquid supply unit, are shared.

8. The substrate processing apparatus according to claim 1, wherein the supply time of the second processing liquid from the second processing liquid supply unit on the substrate during the second step and the third step is longer than during other steps.

9. The substrate processing apparatus according to claim 1, wherein the rotation speed of the substrate in the second step and the third step is lower than that in other steps.

10. A substrate processing apparatus as described in claim 1, wherein in the first step and the fourth step, processing liquid is supplied from the fourth processing liquid supply unit and the sixth processing liquid supply unit during scan-in, but no processing liquid is supplied during scan-out.

11. The substrate processing apparatus of claim 1, wherein in the first step, a first processing liquid is supplied from an edge of the substrate to a first width region, in the second and third steps, a second processing liquid is supplied to a second width region having a width narrower than the first width region, and in the fourth step, a third processing liquid that washes away the second processing liquid is supplied from the edge of the substrate to a third width region having a width narrower than the first width region and wider than the second width region.

12. The substrate processing apparatus according to claim 11, wherein in the third step, a fifth processing liquid is supplied from the fifth processing liquid supply unit to the rear surface of the substrate.

13. A substrate processing method for processing a substrate, comprising: a first step of supplying a first processing liquid from a first nozzle to a region of a predetermined width from an edge of the substrate while rotating the substrate, and removing a coating film of a metal-containing resist in that region; a second step of, after the first step, supplying a second processing liquid to the portion from which the coating film has been removed while moving a second nozzle from the edge of the substrate toward the center of the substrate; and a third step of, after the second step, supplying another processing liquid to the backside of the substrate while moving the second nozzle from the center toward the base end while the substrate is being rotated, wherein, during the third step, another processing liquid is supplied to the backside of the substrate, and the position of an interface at which the second processing liquid and the other processing liquid collide is controlled by adjusting one or a combination of two or more selected from the position of the second nozzle, the supply amount of the second processing liquid, the supply amount of the other processing liquid, and the rotation speed of the substrate.

14. A method for processing a substrate, comprising: a first step of supplying a first processing liquid to a substrate having a coating film of a metal-containing resist formed thereon while holding and rotating the substrate, to remove the coating film in a region of a predetermined width from the edge of the substrate; a second step of, after the first step, sequentially supplying a second processing liquid to the portion of the substrate from which the coating film has been removed, while rotating the substrate, from the edge toward the center; a third step of, after the second step, sequentially supplying the second processing liquid to the portion of the substrate from the center toward the edge while rotating the substrate; and a fourth step of, after the third step, ejecting the third processing liquid into a region of a predetermined width from the edge of the substrate while rotating the substrate, wherein the second processing liquid is ejected onto the back side of the substrate during the third step.

15. The substrate processing method according to claim 14, wherein a processing liquid having a lower concentration than the second processing liquid is discharged onto the back surface of the substrate during the fourth step.

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