Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, an isolation structure, a first packaging layer and an etching barrier layer, wherein the isolation structure is arranged on one side of the substrate, a plurality of isolation openings are defined by the isolation structure, and the isolation openings are used for containing at least part of the light-emitting units; the first packaging layer is arranged on the side, away from the substrate, of the light-emitting unit; the etching barrier layer is arranged on the side, away from the substrate, of the first packaging layer. In the display panel, the first packaging layer and the light-emitting unit below are protected through the etching barrier layer, the thickness of the first packaging layer can be reduced, the production process can be accelerated, the productivity can be released, meanwhile, the photoresist thickness in the preparation process can be reduced, the photoresist stripping condition is reduced, the production efficiency and the product yield are improved, and the production cost is reduced. And the processing property of the display panel is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] However, the current manufacturing process of OLED display products needs improvement. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a display panel and its preparation method and display device that can improve production efficiency and product yield.

[0005] To achieve the above objectives, this application provides a display panel comprising:

[0006] substrate;

[0007] An isolation structure is disposed on one side of the substrate, the isolation structure enclosing and forming a plurality of isolation openings, the isolation openings being used to accommodate at least a portion of the light-emitting units;

[0008] A first encapsulation layer is disposed on the side of the light-emitting unit away from the substrate;

[0009] An etching barrier layer is disposed on the side of the first encapsulation layer away from the substrate.

[0010] In one embodiment, at least a portion of the isolation opening is projected onto the substrate within the projection range of the etch barrier layer onto the substrate;

[0011] Preferably, the etching barrier layer is partially disposed within the corresponding isolation opening;

[0012] Preferably, the etching barrier layer is bonded to the first encapsulation layer.

[0013] In one embodiment, the material of the etch barrier layer includes silicon oxide.

[0014] In one implementation,

[0015] The isolation structure includes a support portion and a crown portion, the crown portion being located on the side of the support portion away from the substrate, and the orthographic projection of the support portion on the substrate being located within the orthographic projection of the crown portion on the substrate;

[0016] Wherein, the first encapsulation layer includes a first portion, the first portion is located within the isolation opening and the orthographic projection of the first portion on the substrate does not overlap with the orthographic projection of the support portion on the substrate, and in the isolation opening, the maximum distance between the surface of the first encapsulation layer portion away from the substrate and the substrate is less than the maximum distance between the surface of the support portion away from the substrate and the substrate.

[0017] Preferably, the thickness of the first encapsulation layer is less than the thickness of the support portion;

[0018] Preferably, the thickness of the first encapsulation layer is 0.5μm-1.05μm.

[0019] In one embodiment, the isolation structure further includes an overlap portion located between the substrate and the support portion;

[0020] Preferably, the orthographic projection of the support portion on the substrate is located within the orthographic projection of the overlapping portion on the substrate.

[0021] In one embodiment, the isolation opening includes a first type of isolation opening and a second type of isolation opening, and the light-emitting unit includes a first light-emitting unit and a second light-emitting unit with different emitted light colors. The first light-emitting unit is at least partially located in the first type of isolation opening, and the second light-emitting unit is at least partially located in the second type of isolation opening.

[0022] The first encapsulation layer includes a first encapsulation portion that covers the first light-emitting unit;

[0023] The etching barrier layer includes a first barrier portion covering the first package portion;

[0024] Preferably, the material of the first blocking portion includes silicon oxide.

[0025] In one embodiment, the isolation opening further includes a third type of isolation opening, and the light-emitting unit further includes a third light-emitting unit with a different color of light emitted from the first light-emitting unit and the second light-emitting unit, wherein the third light-emitting unit is at least partially located in the third type of isolation opening;

[0026] The first encapsulation layer includes a second encapsulation portion covering the second light-emitting unit, and the etching barrier layer includes a second barrier portion covering the second encapsulation portion;

[0027] Preferably, the material of the second blocking portion includes silicon oxide;

[0028] Preferably, the first encapsulation layer includes a third encapsulation portion covering the third light-emitting unit, and the etching barrier layer includes a third barrier portion covering the third encapsulation portion.

[0029] In one embodiment, the light-emitting unit includes a first electrode, a light-emitting functional layer, and a second electrode sequentially stacked along a direction away from the substrate, wherein the light-emitting functional layer and the second electrode are located in the isolation opening;

[0030] Preferably, the first electrode is the anode and the second electrode is the cathode;

[0031] Preferably, the second electrode is electrically connected to the isolation structure.

[0032] In one embodiment, the display panel further includes a pixel defining layer, the pixel defining layer defining a plurality of pixel openings that correspond one-to-one with the plurality of isolation openings, the orthographic projection of the pixel openings on the substrate being located within the orthographic projection of the corresponding isolation openings on the substrate; the pixel openings at least expose a portion of the first electrode;

[0033] Preferably, the pixel defining layer covers the gap between adjacent first electrodes and the edge of the first electrodes;

[0034] Preferably, the pixel defining layer is located between the isolation structure and the substrate, or the pixel defining layer is provided with a clearance opening, and the isolation structure is located at the clearance opening.

[0035] Based on the same inventive concept, this application also provides a display panel, which includes: a substrate;

[0036] An isolation structure is disposed on one side of the substrate, the isolation structure enclosing and forming a plurality of isolation openings, the isolation openings being used to accommodate at least a portion of the light-emitting units; the isolation structure includes a support portion and a crown portion, the crown portion being located on the side of the support portion away from the substrate, and the orthographic projection of the support portion on the substrate being located within the orthographic projection of the crown portion on the substrate;

[0037] A first encapsulation layer is disposed on the side of the light-emitting unit away from the substrate;

[0038] An etching barrier layer is disposed on the side of the first encapsulation layer away from the substrate;

[0039] The first encapsulation layer includes a first part and a second part. The first part is located within the isolation opening, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the support portion on the substrate. The second part contacts the surface of the crown near the substrate and extends to the side of the crown away from the substrate.

[0040] A gap is formed between the first portion and the second portion in a direction perpendicular to the substrate.

[0041] In one embodiment, at least a portion of the isolation opening is projected onto the substrate within the projection range of the etch barrier layer onto the substrate;

[0042] Preferably, the etching barrier layer is partially disposed within the corresponding isolation opening;

[0043] Preferably, the etching barrier layer is bonded to the first encapsulation layer;

[0044] Preferably, the material of the etching barrier layer includes silicon oxide.

[0045] In one embodiment, the isolation opening includes a first type of isolation opening and a second type of isolation opening, and the light-emitting unit includes a first light-emitting unit and a second light-emitting unit with different emitted light colors. The first light-emitting unit is at least partially located in the first type of isolation opening, and the second light-emitting unit is at least partially located in the second type of isolation opening.

[0046] The first encapsulation layer includes a first encapsulation portion that covers the first light-emitting unit;

[0047] The etching barrier layer includes a first barrier portion covering the first package portion;

[0048] Preferably, the material of the first blocking portion includes silicon oxide.

[0049] In one embodiment, the isolation opening further includes a third type of isolation opening, and the light-emitting unit further includes a third light-emitting unit with a different color of light emitted from the first light-emitting unit and the second light-emitting unit, wherein the third light-emitting unit is at least partially located in the third type of isolation opening;

[0050] The first encapsulation layer includes a second encapsulation portion covering the second light-emitting unit, and the etching barrier layer includes a second barrier portion covering the second encapsulation portion;

[0051] Preferably, the material of the second blocking portion includes silicon oxide;

[0052] Preferably, the first encapsulation layer includes a third encapsulation portion covering the third light-emitting unit, and the etching barrier layer includes a third barrier portion covering the third encapsulation portion. Based on the same inventive concept, this application also provides a method for manufacturing a display panel, comprising:

[0053] An isolation structure and a light-emitting unit are formed on one side of a substrate; wherein the isolation structure encloses a plurality of isolation openings, and at least a portion of the light-emitting unit is located in the isolation openings;

[0054] A first encapsulation layer is formed on the side of the light-emitting unit away from the substrate;

[0055] An etching barrier layer is formed on the side of the first encapsulation layer away from the substrate.

[0056] In one embodiment, the isolation opening includes a first type of isolation opening, and the light-emitting unit includes a first light-emitting unit; the fabrication method includes:

[0057] A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate.

[0058] The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening.

[0059] Preferably, the patterning process is performed within the process control time after the etch barrier layer is formed;

[0060] Preferably, the process control time is 3-10 days.

[0061] In one implementation,

[0062] The isolation opening includes a first type of isolation opening and a second type of isolation opening; the light-emitting unit includes a first light-emitting unit and a second light-emitting unit whose emitted light color is different from that of the first light-emitting unit; the preparation method includes:

[0063] A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate.

[0064] The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening.

[0065] The first blocking part is oxidized;

[0066] A second color light-emitting functional layer, a second electrode layer, and a first encapsulation layer are sequentially formed on the substrate in a direction away from the substrate;

[0067] The first encapsulation layer, the second electrode layer, and the light-emitting functional layer of the second color are patterned, and the second light-emitting unit and the second encapsulation part covering the second light-emitting unit are formed in the second type of isolation opening.

[0068] In one embodiment, the isolation opening includes a first type of isolation opening, a second type of isolation opening, and a third type of isolation opening; the light-emitting unit includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit emit light of different colors; the preparation method includes:

[0069] A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate.

[0070] The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening.

[0071] The first blocking portion is oxidized; a second color light-emitting functional layer, a second electrode layer, a first encapsulation layer and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate;

[0072] The second color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the second light-emitting unit, the second encapsulation portion covering the second light-emitting unit and the second barrier portion covering the second encapsulation portion are formed in the second type of isolation opening;

[0073] The second blocking part is oxidized;

[0074] A third color light-emitting functional layer, a second electrode layer, and a first encapsulation layer are sequentially formed on the substrate in a direction away from the substrate;

[0075] The first encapsulation layer, the second electrode layer, and the light-emitting functional layer of the third color are patterned, and the third light-emitting unit and the third encapsulation part covering the third light-emitting unit are formed in the third type of isolation opening.

[0076] Based on the same inventive concept, this application also discloses a display device, which includes the above-described display panel.

[0077] Compared with the prior art, the display panel provided in this application protects the first encapsulation layer and the light-emitting unit below by etching a barrier layer, avoiding over-etching damage to the first encapsulation layer and the light-emitting unit. The thickness of the first encapsulation layer can be reduced, which can speed up the production process and release production capacity. At the same time, the thickness of the photoresist during the preparation process can be reduced, reducing the occurrence of photoresist peeling, thereby improving production efficiency and product yield, and enhancing the process performance of the display panel. Attached Figure Description

[0078] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0079] Figure 1 This is a cross-sectional structural diagram of a related display panel;

[0080] Figure 2 This is a cross-sectional structural diagram of a related display panel manufacturing process;

[0081] Figure 3 This is a cross-sectional structural diagram of a related display panel manufacturing process;

[0082] Figure 4 A cross-sectional structural schematic diagram of a display panel provided in some embodiments of this application;

[0083] Figure 5 This is a cross-sectional structural diagram of the display panel manufacturing process provided in some other embodiments of this application;

[0084] Figure 6 A cross-sectional structural schematic diagram of a display panel provided for other embodiments of this application;

[0085] Figure 7 A cross-sectional structural schematic diagram of a display panel provided for other embodiments of this application;

[0086] Figure 8 A flowchart of a method for fabricating a display panel is provided for other embodiments of this application.

[0087] Marker explanation:

[0088] 100. Display panel;

[0089] 1. Substrate;

[0090] 2. Isolation structure; 20. Isolation opening; 21. Support; 22. Crown; 23. Overlap; 201. Class I isolation opening; 202. Class II isolation opening; 203. Class III isolation opening;

[0091] 3. Light-emitting unit; 31. First electrode; 32. Light-emitting functional layer; 33. Second electrode; 301. First light-emitting unit; 302. Second light-emitting unit; 303. Third light-emitting unit;

[0092] 41. First encapsulation layer; 401. First encapsulation portion; 402. Second encapsulation portion; 403. Third encapsulation portion; 411. First part; 412. Second part;

[0093] 5. Etching barrier layer; 501. First barrier portion; 502. Second barrier portion; 503. Third barrier portion;

[0094] 6. Pixel delimiting layer; 61. Pixel opening. Detailed Implementation

[0095] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0096] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0097] Reference Figure 1The diagram shows a schematic of a related display panel, which includes a substrate 1 and an isolation structure 2 disposed on one side of the substrate 1. The isolation structure 2 encloses a plurality of isolation openings 20, each of which accommodates at least a portion of the light-emitting units 3, thereby isolating adjacent light-emitting units 3 from each other through the isolation structure 2. A first encapsulation layer 41 covers the light-emitting units 3. By providing the isolation structure 2 at the gaps between the light-emitting units 3, the functional film layers of adjacent light-emitting units 3 can be isolated. The light-emitting units 3 typically include R, G, and B, which are used to emit red light, green light, and blue light, respectively. Therefore, the isolation openings 20 also include multiple types of openings for accommodating different light-emitting units 3.

[0098] In related technologies, refer to Figures 1 to 3 As shown, repeated etching is required during the fabrication of the display panel to form light-emitting units. In forming these units, firstly, full-area evaporation is performed to deposit the first complete set of OLED light-emitting and functional layers for each color. Then, full-area thin-film encapsulation is performed. Next, through processes such as coating, exposure, development, etching, and stripping, unwanted portions of the substrate are selectively removed, thus completing the patterning of the first color light-emitting unit. For example, this forms the first light-emitting unit 301 and the first encapsulation portion 401 covering the first light-emitting unit 301. The first light-emitting unit 301 is located within the first type of isolation opening 201, as shown in the figure. Figure 1 The above process is then repeated twice more to complete the full-color graphic representation of the three primary colors (RGB). The structural changes at the first type of isolation opening 201 during the post-processing pixel graphic representation can be referenced... Figure 2 , Figure 3 .

[0099] Through research, the inventors discovered that the thickness of the first encapsulation layer 41 in related technologies is relatively large. For example, at the end of the isolation opening 20 away from the substrate 1, the first encapsulation portion 401 on the first light-emitting unit 301 can form a sealing structure, thereby ensuring the continuity of the cathode layer of the subsequent process pixel light-emitting unit deposited on the first encapsulation portion 401. During the subsequent process pixel patterning, the cathode layer can serve as an etching barrier layer for the first encapsulation portion 401 and the underlying film structure. If the cathode layer is discontinuous, etching will damage the first encapsulation portion 401. Thickening the first encapsulation layer 41 leads to the following problems: on the one hand, it reduces production capacity and affects production efficiency; on the other hand, the photoresist used in the patterning process of the first encapsulation layer 41 through etching will also thicken simultaneously, leading to frequent photoresist peeling and affecting product yield. Furthermore, an excessively thick first encapsulation layer 41 will also affect the optical adjustment capability of the light-emitting unit 3.

[0100] Based on this, this application provides a display panel solution, as detailed in the following embodiments.

[0101] Reference Figure 4 As shown, some embodiments of this application provide a display panel 100, which includes a substrate 1 and an isolation structure 2. The isolation structure 2 is disposed on one side of the substrate 1 and forms a plurality of isolation openings 20, which accommodate at least a portion of the film layer of a light-emitting unit 3. The display panel 100 also includes a first encapsulation layer 41 and an etching barrier layer 5. The first encapsulation layer 41 is disposed on the side of the light-emitting unit 3 away from the substrate 1. The etching barrier layer 5 is disposed on the side of the first encapsulation layer 41 away from the substrate 1.

[0102] In the display panel 100 provided in this application embodiment, by providing an etching barrier layer 5 on the first encapsulation layer 41, the etching barrier layer 5 can protect the underlying first encapsulation layer 41 and light-emitting unit 3 during the etching process of patterning pixels in the subsequent process, avoiding damage to the first encapsulation layer 41 and light-emitting unit 3 caused by etching. The thickness of the first encapsulation layer 41 can be reduced, which can speed up the production process and release production capacity. At the same time, the thickness of the photoresist during the preparation process can be reduced, reducing the situation of photoresist peeling, thereby improving production efficiency and product yield, and improving the process performance of the display panel 100.

[0103] Specifically, the first encapsulation layer 41 can cover the sidewalls of the light-emitting unit 3 and the isolation structure 2. That is, the first encapsulation layer 41 is attached to the surface of the light-emitting unit 3 away from the substrate 1 and extends to the sidewall of the isolation structure 2 located at the isolation opening 20. Wherein, the first encapsulation layer 41 covering the light-emitting unit 3 can protect the film layer of the light-emitting unit 3 during the manufacturing process of the display panel 100.

[0104] Reference Figure 4 As shown, in some embodiments, at least a portion of the isolation opening 20 is projected onto the substrate 1 within the range of the etch barrier layer 5 projected onto the substrate.

[0105] Specifically, the etch barrier layer 5 covers all or part of the first encapsulation layer 41 in the isolation opening 20 to reduce the thickness of the first encapsulation layer 41 in the isolation opening 20.

[0106] Preferably, the etching barrier layer 5 is disposed within its corresponding isolation opening 20.

[0107] Specifically, within the isolation opening 20 covered by the etch barrier layer 5, the thickness of the first encapsulation layer 41 is relatively small, so the portion of the etch barrier layer 5 covering the first encapsulation layer 41 is located within the corresponding isolation opening 20.

[0108] Optionally, the etch barrier layer 5 is bonded to the first encapsulation layer 41. Specifically, the etch barrier layer 5 can be formed on the first encapsulation layer 41 in the form of a film, so that the etch barrier layer 5 covers the surface of the first encapsulation layer 41 away from the substrate 1.

[0109] In some embodiments, the material of the etch barrier layer 5 includes silicon oxide (SiOx).

[0110] For example, the etching barrier layer 5 can be a silicon oxide layer formed by oxidizing a silicon nitride layer. Silicon nitride has good etching selectivity and is suitable for use in the patterning process of the front-end pixel. The silicon oxide formed after silicon nitride oxidation usually has better chemical stability and enhanced corrosion resistance, which can effectively block etching and protect the film layer of the front-end pixel from over-etching during the patterning process of the back-end pixel.

[0111] For example, the etch barrier layer 5 may include a single layer of silicon oxide. Alternatively, the etch barrier layer 5 may also include a stacked structure composed of a silicon nitride layer and a silicon oxide layer, with the silicon oxide layer located on the side of the silicon nitride layer away from the substrate 1.

[0112] Reference Figure 4 As shown, in some embodiments, the isolation structure 2 includes a support portion 21 and a crown portion 22, with the crown portion 22 located on the side of the support portion 21 away from the substrate 1. The orthographic projection of the support portion 21 onto the substrate 1 lies within the orthographic projection of the crown portion 22 onto the substrate 1. Thus, at least the portion of the isolation structure 2 away from the substrate 1 is configured with a shape that is wider at the top and narrower at the bottom, thereby enabling the isolation structure 2 to block the light-emitting functional layer of adjacent light-emitting units 3, thereby reducing the current crosstalk problem of adjacent light-emitting units 3.

[0113] The first encapsulation layer 41 includes a first portion 411 located within the isolation opening 20, and the orthographic projection of the first portion 411 on the substrate 1 does not overlap with the orthographic projection of the support portion 21 on the substrate 1. The maximum distance between the surface of the first portion 411 away from the substrate 1 and the substrate 1 is less than the maximum distance between the surface of the support portion 21 away from the substrate 1 and the substrate 1.

[0114] Specifically, the first part 411 is the portion of the first encapsulation layer 41 that covers the light-emitting unit. The thickness of the first encapsulation layer 41 can be reduced so that the highest point of the first encapsulation layer 41 is lower than the support portion 21, that is, there is a gap between the highest point of the first encapsulation layer 41 and the crown portion 22 in the direction perpendicular to the substrate 1.

[0115] Optionally, the thickness of the first encapsulation layer 41 is less than the thickness of the support portion 21. Here, thickness refers to the dimension in the direction perpendicular to the substrate 1.

[0116] Preferably, the thickness of the first encapsulation layer 41 is 0.5μm-1.05μm. For example, the thickness of the first encapsulation layer 41 can be 0.5μm, 0.7μm, 0.8μm, 1.0μm, 1.05μm, etc.

[0117] Reference Figure 4As shown, in some embodiments, the isolation structure 2 further includes an overlap portion 23 located between the substrate 1 and the support portion 21.

[0118] Optionally, the orthographic projection of the support portion 21 on the substrate 1 is located within the orthographic projection of the overlapping portion 23 on the substrate 1.

[0119] In this embodiment, the isolation structure 2 is a three-layer structure, including an overlapping part 23, a support part 21 and a crown part 22 stacked together. The overlapping part 23 is a conductive structure that can be electrically connected to the second electrode of the light-emitting unit 3.

[0120] In other embodiments, the isolation structure 2 can be a two-layer structure consisting only of a support portion 21 and a crown portion 22. The support portion 21 is a conductive structure and can be electrically connected to the second electrode of the light-emitting unit 3.

[0121] Reference Figure 5 , Figure 6 As shown, in some embodiments, the isolation opening 20 includes a first type of isolation opening 201 and a second type of isolation opening 202. The light-emitting unit 3 includes a first light-emitting unit 301 and a second light-emitting unit 302 with different emitted light colors. At least a portion of the film layer of the first light-emitting unit 301 is located in the first type of isolation opening 201, and at least a portion of the film layer of the second light-emitting unit 302 is located in the second type of isolation opening 202. The first encapsulation layer 41 includes a first encapsulation portion 401 covering the first light-emitting unit 301, and the etching barrier layer 5 includes a first barrier portion 501 covering the first encapsulation portion 401.

[0122] For example, after the first light-emitting unit 301 is formed and before the second light-emitting unit 302 is formed, the first blocking portion 501 is oxidized. In this way, the oxidized first blocking portion 501 has stronger etching resistance, avoiding damage to the first packaging portion 401 due to excessive etching during the formation of the second light-emitting unit 302.

[0123] Optionally, the material of the first blocking portion 501 includes silicon oxide.

[0124] Reference Figure 7 As shown, in some embodiments, the isolation opening 20 further includes a third type of isolation opening 203, and the light-emitting unit 3 further includes a third light-emitting unit 303 with a different color of light emitted from the first light-emitting unit 301 and the second light-emitting unit 302. At least a portion of the film layer of the third light-emitting unit 303 is located in the third type of isolation opening 203.

[0125] The first encapsulation layer 41 includes a second encapsulation portion 402 covering the second light-emitting unit 302, and the etching barrier layer 5 includes a second barrier portion 502 covering the second encapsulation portion 402.

[0126] For example, after the second light-emitting unit 302 is formed and before the third light-emitting unit 303 is formed, the second blocking portion 502 is oxidized. In this way, the oxidized second blocking portion 502 has stronger etching resistance, avoiding damage to the second packaging portion 402 due to excessive etching during the formation of the third light-emitting unit 303.

[0127] Optionally, the material of the second barrier portion 502 includes silicon oxide.

[0128] Optionally, the first encapsulation layer 41 includes a third encapsulation portion 403 covering the third light-emitting unit 303, and the etching barrier layer 5 includes a third barrier portion 503 covering the third encapsulation portion 403.

[0129] Reference Figure 4 As shown, in some embodiments, the light-emitting unit 3 includes a first electrode 31, a light-emitting functional layer 32, and a second electrode 33 sequentially stacked along a direction away from the substrate 1, with the light-emitting functional layer 32 and the second electrode 33 located in the isolation opening 20.

[0130] Optionally, the first electrode 31 is the anode and the second electrode 33 is the cathode.

[0131] Optionally, the second electrode 33 is electrically connected to the isolation structure 2. This allows the isolation structure 2 to connect the second electrodes 33 together, forming a common electrode for easy driving.

[0132] Reference Figure 4 As shown, in some embodiments, the display panel 100 further includes a pixel defining layer 6, which defines a plurality of pixel openings 61 corresponding one-to-one with the plurality of isolation openings 20. The orthographic projection of the pixel opening 61 on the substrate 1 lies within the orthographic projection of the corresponding isolation opening 20 on the substrate 1, and the pixel opening 61 exposes at least a portion of the first electrode 31. This allows the first electrode 31 to have a larger design area without contacting the isolation structure 2, thereby enabling the light-emitting unit 3 to have a larger effective light-emitting area.

[0133] Optionally, the pixel defining layer 6 covers the gap between adjacent first electrodes 31 and the edge of the first electrodes 31.

[0134] Optionally, the pixel defining layer 6 is located between the isolation structure 2 and the substrate 1. Alternatively, the pixel defining layer 6 is provided with a clearance opening, and the isolation structure 2 is located within the clearance opening.

[0135] For example, the light-emitting unit 3 typically includes a first light-emitting unit R, a second light-emitting unit G, and a third light-emitting unit B, which are used to emit red light, green light, and blue light, respectively. During pixel fabrication, full-area evaporation is performed to deposit multiple functional film layers for the first color sub-pixel. Then, full-area thin-film encapsulation is performed to form a first encapsulation layer 41. Next, through processes such as coating, exposure, development, etching, and stripping, unwanted portions of the substrate are selectively removed to complete the patterning of the first color, forming the first light-emitting unit R. This process is then repeated twice more to complete the full-color patterning of the three primary colors (red, green, and blue). Since a mask is not needed to deposit functional film layers in the area where the light-emitting unit 3 is located, the evaporation process using the isolation structure 2 does not require consideration of alignment accuracy during evaporation. This allows for a smaller gap design between the light-emitting units 3, increasing pixel density.

[0136] Furthermore, the first type of isolation opening 201, the second type of isolation opening 202, and the third type of isolation opening 203 can be set as needed, and their shapes and sizes may be different, without any specific restrictions.

[0137] In some embodiments, the display panel 100 further includes a second encapsulation layer and a third encapsulation layer. The second encapsulation layer covers the first encapsulation layer 41 and the isolation structure 2, and the third encapsulation layer covers the second encapsulation layer. The first and third encapsulation layers are inorganic layers with high density to isolate water and oxygen, while the second encapsulation layer is an organic layer with a greater thickness to flatten the surface of the display panel, thus achieving an inorganic-organic-inorganic three-layer encapsulation.

[0138] Based on the same inventive concept, and referring to Figure 4As shown, some embodiments of this application provide a display panel 100, which includes a substrate 1 and an isolation structure 2. The isolation structure 2 is disposed on one side of the substrate 1 and forms a plurality of isolation openings 20. At least a portion of the film layer of the light-emitting unit 3 is accommodated in the isolation openings 20. The isolation structure 2 includes a support portion 21 and a crown portion 22, with the crown portion 22 located on the side of the support portion 21 away from the substrate 1. The orthographic projection of the support portion 21 on the substrate 1 is within the orthographic projection of the crown portion 22 on the substrate 1. The display panel 100 also includes a first encapsulation layer 41 and an etching barrier layer 5. The first encapsulation layer 41 is disposed on the side of the light-emitting unit 3 away from the substrate 1. The etching barrier layer 5 is disposed on the side of the first encapsulation layer 41 away from the substrate 1. The first encapsulation layer 41 includes a first portion 411 and a second portion 412. The first portion 411 is located within the isolation openings 20, and the orthographic projection of the first portion 411 on the substrate 1 does not overlap with the orthographic projection of the support portion 21 on the substrate 1. The second portion 412 contacts the surface of the crown 22 near the substrate 1 and extends from the surface of the crown 22 near the substrate 1 to the side of the crown 22 away from the substrate 1. A gap H is formed between the first portion 411 and the second portion 412 in a direction perpendicular to the substrate 1.

[0139] Specifically, the gap H is located between the surface of the first portion 411 facing away from the substrate 1 and the surface of the second portion 412 approaching the substrate 1. The first portion 411 is the part of the first encapsulation layer 41 that covers the light-emitting unit. The second portion 412 is the part of the first encapsulation layer 41 that covers the crown 22. The first portion 411 and the second portion 412 are connected by a transition portion that covers the sidewall of the support portion 21. The maximum distance between the surface of the first portion 411 away from the substrate 1 and the substrate 1 is less than the minimum distance between the second portion 412 and the substrate 1.

[0140] In the display panel 100 provided in this application embodiment, by providing an etching barrier layer 5 on the first encapsulation layer 41, the etching barrier layer 5 can protect the underlying first encapsulation layer 41 and light-emitting unit 3 during the etching process of patterning pixels in the subsequent process, avoiding damage to the first encapsulation layer 41 and light-emitting unit 3 caused by etching. The thickness of the first encapsulation layer 41 can be reduced, which can speed up the production process and release production capacity. At the same time, the thickness of the photoresist during the preparation process can be reduced, reducing the situation of photoresist peeling, thereby improving production efficiency and product yield, and improving the process performance of the display panel 100.

[0141] Specifically, the first encapsulation layer 41 can cover the sidewalls of the light-emitting unit 3 and the isolation structure 2. That is, the first encapsulation layer 41 is attached to the surface of the light-emitting unit 3 away from the substrate 1 and extends to the sidewall of the isolation structure 2 located at the isolation opening 20. Wherein, the first encapsulation layer 41 covering the light-emitting unit 3 can protect the film layer of the light-emitting unit 3 during the manufacturing process of the display panel 100.

[0142] Preferably, the thickness of the first encapsulation layer 41 is 0.5μm-1.05μm. For example, the thickness of the first encapsulation layer 41 can be 0.5μm, 0.7μm, 0.8μm, 1.0μm, 1.05μm, etc.

[0143] Reference Figure 4 As shown, in some embodiments, at least a portion of the isolation opening 20 is projected onto the substrate 1 within the range of the etch barrier layer 5 projected onto the substrate.

[0144] Specifically, the etch barrier layer 5 covers all or part of the first encapsulation layer 41 in the isolation opening 20 to reduce the thickness of the first encapsulation layer 41 in the isolation opening 20.

[0145] Preferably, the etching barrier layer 5 is disposed within its corresponding isolation opening 20.

[0146] Specifically, within the isolation opening 20 covered by the etch barrier layer 5, the thickness of the first encapsulation layer 41 is relatively small, so the portion of the etch barrier layer 5 covering the first encapsulation layer 41 is located within the corresponding isolation opening 20.

[0147] Optionally, the etch barrier layer 5 is bonded to the first encapsulation layer 41.

[0148] Specifically, an etching barrier layer 5 can be formed on the first encapsulation layer 41 in the form of a film, so that the etching barrier layer 5 covers the surface of the first encapsulation layer 41 away from the substrate 1.

[0149] Optionally, the material of the etching barrier layer 5 includes silicon oxide.

[0150] For example, the etching barrier layer 5 can be a silicon oxide layer formed by oxidizing a silicon nitride layer. Silicon nitride has good etching selectivity, making it suitable for use in the patterning process of front-end pixels. Silicon oxide formed after silicon nitride oxidation typically has better chemical stability and enhanced corrosion resistance, effectively blocking etching and protecting the film layer of the front-end pixels from over-etching during the patterning process of subsequent pixels.

[0151] Reference Figure 5 , Figure 6As shown, in some embodiments, the isolation opening 20 includes a first type of isolation opening 201 and a second type of isolation opening 202. The light-emitting unit 3 includes a first light-emitting unit 301 and a second light-emitting unit 302 with different emitted light colors. At least a portion of the film layer of the first light-emitting unit 301 is located in the first type of isolation opening 201, and at least a portion of the film layer of the second light-emitting unit 302 is located in the second type of isolation opening 202. The first encapsulation layer 41 includes a first encapsulation portion 401 covering the first light-emitting unit 301, and the etching barrier layer 5 includes a first barrier portion 501 covering the first encapsulation portion 401.

[0152] For example, after the first light-emitting unit 301 is formed and before the second light-emitting unit 302 is formed, the first blocking portion 501 is oxidized. In this way, the oxidized first blocking portion 501 has stronger etching resistance, avoiding damage to the first packaging portion 401 due to excessive etching during the formation of the second light-emitting unit 302.

[0153] Optionally, the material of the first blocking portion 501 includes silicon oxide.

[0154] Reference Figure 7 As shown, in some embodiments, the isolation opening 20 further includes a third type of isolation opening 203, and the light-emitting unit 3 further includes a third light-emitting unit 303 with a different color of light emitted from the first light-emitting unit 301 and the second light-emitting unit 302. At least a portion of the film layer of the third light-emitting unit 303 is located in the third type of isolation opening 203. The first encapsulation layer 41 includes a second encapsulation portion 402 covering the second light-emitting unit 302, and the etching barrier layer 5 includes a second barrier portion 502 covering the second encapsulation portion 402.

[0155] For example, after the second light-emitting unit 302 is formed and before the third light-emitting unit 303 is formed, the second blocking portion 502 is oxidized. In this way, the oxidized second blocking portion 502 has stronger etching resistance, avoiding damage to the second packaging portion 402 due to excessive etching during the formation of the third light-emitting unit 303.

[0156] Optionally, the material of the second barrier portion 502 includes silicon oxide.

[0157] Optionally, the first encapsulation layer 41 includes a third encapsulation portion 403 covering the third light-emitting unit 303, and the etching barrier layer 5 includes a third barrier portion 503 covering the third encapsulation portion 403.

[0158] Based on the same inventive concept, and referring to Figure 8 As shown, other embodiments of this application provide a method for manufacturing a display panel, and the structure of the resulting display panel 100 can be referred to... Figure 4 The method for manufacturing this display panel includes the following steps:

[0159] Step S10: An isolation structure 2 and a light-emitting unit 3 are formed on one side of the substrate 1; wherein the isolation structure 2 surrounds a plurality of isolation openings 20, and at least a portion of the light-emitting unit 3 is located in the isolation openings 20.

[0160] Step S20: A first encapsulation layer 41 is formed on the side of the light-emitting unit 3 away from the substrate 1.

[0161] Step S30: An etching barrier layer 5 is formed on the side of the first encapsulation layer 41 away from the substrate 1.

[0162] In the display panel manufacturing method provided in this embodiment, by setting an etching barrier layer 5 on the first encapsulation layer 41, the etching barrier layer 5 can protect the first encapsulation layer 41 and the light-emitting unit 3 below during the etching process of patterning pixels in the subsequent process, avoiding damage to the first encapsulation layer 41 and the light-emitting unit 3 caused by etching. The first encapsulation layer 41 does not need to be thickened to the seal, which can speed up the production process and release production capacity. At the same time, the photoresist can be thinned simultaneously, reducing the situation of photoresist peeling, thereby improving production efficiency and product yield, and improving the process performance of the display panel 100.

[0163] In some embodiments, the isolation opening 20 includes a first type of isolation opening 201, and the light-emitting unit 3 includes a first light-emitting unit 301. The method for manufacturing the display panel 100 includes:

[0164] Step S11: A light-emitting functional layer of the first color, a second electrode layer, a first encapsulation layer 41 and an etch barrier layer 5 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0165] Step S21: The first color etching barrier layer 5, the first encapsulation layer 41, the second electrode layer and the light-emitting functional layer are patterned to form a first light-emitting unit 301 in the first type of isolation opening 201, and a first encapsulation part 401 covering the first light-emitting unit 301 and a first barrier part 501 covering the first encapsulation part 401 are also formed.

[0166] Specifically, the first encapsulation layer 41 that does not need to be retained can be removed first by wet etching, and then the second electrode layer and the light-emitting functional layer that do not need to be retained can be removed by dry etching.

[0167] Optionally, the patterning can be performed during the process control time (Q-time) after the formation of the etch barrier layer 5.

[0168] Preferably, the process control time is 3-10 days, for example, the process control time can be 3 days, 5 days, 8 days, 10 days, etc.

[0169] For example, a silicon nitride layer with poor film quality can be deposited over the first encapsulation layer 41. During the process control time, the silicon nitride is not oxidized, allowing for etching of the pre-process pixel patterning. Then, the silicon nitride is oxidized to form silicon oxide, serving as an etch stop layer 5. During the subsequent pixel etching process, it is not necessary to thicken the first encapsulation layer 41 to the sealing layer, thus preventing etching damage to the first encapsulation layer 41 and its underlying film. The specific process control time can be determined based on the film quality of the etch stop layer 5. Specifically, the etch stop layer 5 is formed by silicon nitride oxidation, allowing for pre-process pixel patterning before silicon nitride oxidation and post-process pixel patterning after silicon nitride oxidation.

[0170] In some embodiments, the isolation opening 20 includes a first type of isolation opening 201 and a second type of isolation opening 202, and the light-emitting unit 3 includes a first light-emitting unit 301 and a second light-emitting unit 302 whose emitted light color is different from that of the first light-emitting unit 301. The method for manufacturing the display panel 100 includes the following steps:

[0171] Step S11: A light-emitting functional layer of the first color, a second electrode layer, a first encapsulation layer 41 and an etch barrier layer 5 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0172] Step S21: The first color etching barrier layer 5, the first encapsulation layer 41, the second electrode layer and the light-emitting functional layer are patterned to form a first light-emitting unit 301 in the first type of isolation opening 201, and a first encapsulation part 401 covering the first light-emitting unit 301 and a first barrier part 501 covering the first encapsulation part 401 are also formed.

[0173] Step S31: Oxidize the first blocking part 501;

[0174] Step S41: A second color light-emitting functional layer, a second electrode layer, and a first encapsulation layer 41 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0175] Step S51: The first encapsulation layer 41, the second electrode layer and the light-emitting functional layer of the second color are patterned to form a second light-emitting unit 302 and a second encapsulation part 402 covering the second light-emitting unit 302 in the second type of isolation opening 202.

[0176] Optionally, the first barrier portion 501 includes silicon oxide. Specifically, it can be obtained by oxidizing silicon nitride in air.

[0177] In some embodiments, the isolation opening 20 includes a first type of isolation opening 201, a second type of isolation opening 202, and a third type of isolation opening 203. The light-emitting unit 3 emits light of different colors from the first light-emitting unit 301, the second light-emitting unit 302, and the third light-emitting unit 303. The method for manufacturing the display panel 100 includes the following steps:

[0178] Step S11: A light-emitting functional layer of the first color, a second electrode layer, a first encapsulation layer 41 and an etch barrier layer 5 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0179] Step S21: The first color etching barrier layer 5, the first encapsulation layer 41, the second electrode layer and the light-emitting functional layer are patterned to form a first light-emitting unit 301 in the first type of isolation opening 201, and a first encapsulation part 401 covering the first light-emitting unit 301 and a first barrier part 501 covering the first encapsulation part 401 are also formed.

[0180] Step S31: Oxidize the first blocking part 501;

[0181] Step S42: A second color light-emitting functional layer, a second electrode layer, a first encapsulation layer 41 and an etch barrier layer 5 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0182] Step S52: The second color etching barrier layer 5, the first encapsulation layer 41, the second electrode layer and the light-emitting functional layer are patterned to form a second light-emitting unit 302, a second encapsulation portion 402 covering the second light-emitting unit 302 and a second barrier portion 502 covering the second encapsulation portion 402 in the second type of isolation opening 202.

[0183] Step S62: Oxidize the second blocking part 502;

[0184] Step S72: A third color light-emitting functional layer, a second electrode layer, and a first encapsulation layer 41 are sequentially formed on the substrate 1 in a direction away from the substrate 1.

[0185] Step S82: The first encapsulation layer 41, the second electrode layer and the light-emitting functional layer of the third color are patterned to form a third light-emitting unit 303 and a third encapsulation part 403 covering the third light-emitting unit 303 in the third type of isolation opening 203.

[0186] Optionally, the second barrier portion 502 includes silicon oxide.

[0187] Optionally, the first, second, and third colors each correspond to one of the colors red, blue, and green. These can be set according to the desired lighting effect; there are no specific limitations.

[0188] The specific structure and materials of the display panel 100 prepared in the method of preparing the display panel in this embodiment are the same as those in the above-described embodiment of the display panel, and will not be repeated here.

[0189] Other embodiments of this application disclose a display device including the display panel 100 in the above embodiments. The display device can be used on smart devices (such as mobile phones, VR devices, computers, televisions, vehicle displays, etc.).

[0190] In this embodiment, the display panel 100 of the display device has an etching barrier layer 5 provided on the first encapsulation layer 41. During the etching process for patterning pixels in the subsequent process, the etching barrier layer 5 can protect the underlying first encapsulation layer 41 and the light-emitting unit 3, preventing the etching from damaging the first encapsulation layer 41 and the light-emitting unit 3. The thickness of the first encapsulation layer 41 can be reduced, which can speed up the production process, release production capacity, and at the same time reduce the photoresist, reduce the photoresist peeling, thereby improving production efficiency and product yield, and improving the process performance of the display panel 100.

[0191] The composition and preparation of the isolation structure 2 (or partition structure or isolation column) are specified in patents CN118251982A, 202410864269.8, PCT / CN2024 / 098407, PCT / CN2024 / 102783, PCT / CN2024 / 098217, PCT / CN2024 / 099419, and PCT / CN2024 / 09. Further descriptions are provided in CN117979755A, CN117998900A, CN117062489A, CN117580403A, CN116583155A, CN116669477A, ​​CN117396039A, CN116669480A, CN116600606A, and CN117500332A for reference.

[0192] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0193] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A display panel, characterized in that, include: substrate; An isolation structure is disposed on one side of the substrate, the isolation structure enclosing and forming a plurality of isolation openings, the isolation openings being used to accommodate at least a portion of the light-emitting units; A first encapsulation layer is disposed on the side of the light-emitting unit away from the substrate; An etching barrier layer is disposed on the side of the first encapsulation layer away from the substrate.

2. The display panel as described in claim 1, characterized in that, At least a portion of the isolation opening's orthogonal projection onto the substrate lies within the orthogonal projection range of the etch barrier layer onto the substrate; Preferably, the etching barrier layer is partially disposed within the corresponding isolation opening; Preferably, the etching barrier layer is bonded to the first encapsulation layer.

3. The display panel as described in claim 1, characterized in that, The material of the etching barrier layer includes silicon oxide.

4. The display panel as described in claim 1, characterized in that, The isolation structure includes a support portion and a crown portion, the crown portion being located on the side of the support portion away from the substrate, and the orthographic projection of the support portion on the substrate being located within the orthographic projection of the crown portion on the substrate; Wherein, the first encapsulation layer includes a first part, the first part is located within the isolation opening and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the support portion on the substrate, and the maximum distance between the surface of the first part away from the substrate and the substrate is less than the maximum distance between the surface of the support portion away from the substrate and the substrate. Preferably, the thickness of the first encapsulation layer is less than the thickness of the support portion; Preferably, the thickness of the first encapsulation layer is 0.5μm-1.05μm.

5. The display panel as described in claim 4, characterized in that, The isolation structure further includes an overlapping portion, which is located between the substrate and the support portion; Preferably, the orthographic projection of the support portion on the substrate is located within the orthographic projection of the overlapping portion on the substrate.

6. The display panel as described in claim 1, characterized in that, The isolation opening includes a first type of isolation opening and a second type of isolation opening. The light-emitting unit includes a first light-emitting unit and a second light-emitting unit with different emitted light colors. The first light-emitting unit is at least partially located in the first type of isolation opening, and the second light-emitting unit is at least partially located in the second type of isolation opening. The first encapsulation layer includes a first encapsulation portion that covers the first light-emitting unit; The etching barrier layer includes a first barrier portion covering the first package portion; Preferably, the material of the first blocking portion includes silicon oxide.

7. The display panel as described in claim 6, characterized in that, The isolation opening further includes a third type of isolation opening, and the light-emitting unit further includes a third light-emitting unit whose emitted light color is different from that of the first light-emitting unit and the second light-emitting unit. The third light-emitting unit is at least partially located in the third type of isolation opening. The first encapsulation layer includes a second encapsulation portion covering the second light-emitting unit, and the etching barrier layer includes a second barrier portion covering the second encapsulation portion; Preferably, the material of the second blocking portion includes silicon oxide; Preferably, the first encapsulation layer includes a third encapsulation portion covering the third light-emitting unit, and the etching barrier layer includes a third barrier portion covering the third encapsulation portion.

8. The display panel as described in claim 1, characterized in that, The light-emitting unit includes a first electrode, a light-emitting functional layer, and a second electrode sequentially stacked along a direction away from the substrate, wherein the light-emitting functional layer and the second electrode are located in the isolation opening; Preferably, the first electrode is the anode and the second electrode is the cathode; Preferably, the second electrode is electrically connected to the isolation structure.

9. The display panel as described in claim 8, characterized in that, The display panel further includes a pixel defining layer, which defines a plurality of pixel openings that correspond one-to-one with the plurality of isolation openings, and the orthogonal projection of the pixel openings on the substrate is located within the orthogonal projection of the corresponding isolation openings on the substrate. The pixel opening exposes at least a portion of the first electrode; Preferably, the pixel defining layer covers the gap between adjacent first electrodes and the edge of the first electrodes; Preferably, the pixel defining layer is located between the isolation structure and the substrate, or the pixel defining layer is provided with a clearance opening, and the isolation structure is located at the clearance opening.

10. A display panel, characterized in that, include: substrate; An isolation structure is disposed on one side of the substrate, the isolation structure enclosing and forming a plurality of isolation openings, the isolation openings being used to accommodate at least a portion of the light-emitting units; The isolation structure includes a support portion and a crown portion, the crown portion being located on the side of the support portion away from the substrate, and the orthographic projection of the support portion on the substrate being located within the orthographic projection of the crown portion on the substrate; A first encapsulation layer is disposed on the side of the light-emitting unit away from the substrate; An etching barrier layer is disposed on the side of the first encapsulation layer away from the substrate; The first encapsulation layer includes a first part and a second part. The first part is located within the isolation opening, and the orthographic projection of the first part on the substrate does not overlap with the orthographic projection of the support portion on the substrate. The second part contacts the surface of the crown near the substrate and extends to the side of the crown away from the substrate. A gap is formed between the first portion and the second portion in a direction perpendicular to the substrate.

11. The display panel as claimed in claim 10, characterized in that, At least a portion of the isolation opening's orthogonal projection onto the substrate lies within the orthogonal projection range of the etch barrier layer onto the substrate; Preferably, the etching barrier layer is partially disposed within the corresponding isolation opening; Preferably, the etching barrier layer is bonded to the first encapsulation layer; Preferably, the material of the etching barrier layer includes silicon oxide.

12. The display panel as claimed in claim 10, characterized in that, The isolation opening includes a first type of isolation opening and a second type of isolation opening. The light-emitting unit includes a first light-emitting unit and a second light-emitting unit with different emitted light colors. The first light-emitting unit is at least partially located in the first type of isolation opening, and the second light-emitting unit is at least partially located in the second type of isolation opening. The first encapsulation layer includes a first encapsulation portion that covers the first light-emitting unit; The etching barrier layer includes a first barrier portion covering the first package portion; Preferably, the material of the first blocking portion includes silicon oxide.

13. The display panel as claimed in claim 12, characterized in that, The isolation opening further includes a third type of isolation opening, and the light-emitting unit further includes a third light-emitting unit whose emitted light color is different from that of the first light-emitting unit and the second light-emitting unit. The third light-emitting unit is at least partially located in the third type of isolation opening. The first encapsulation layer includes a second encapsulation portion covering the second light-emitting unit, and the etching barrier layer includes a second barrier portion covering the second encapsulation portion; Preferably, the material of the second blocking portion includes silicon oxide; Preferably, the first encapsulation layer includes a third encapsulation portion covering the third light-emitting unit, and the etching barrier layer includes a third barrier portion covering the third encapsulation portion.

14. A method for manufacturing a display panel, characterized in that, include: An isolation structure and a light-emitting unit are formed on one side of a substrate; wherein the isolation structure encloses a plurality of isolation openings, and at least a portion of the light-emitting unit is located in the isolation openings; A first encapsulation layer is formed on the side of the light-emitting unit away from the substrate; An etching barrier layer is formed on the side of the first encapsulation layer away from the substrate.

15. The method for manufacturing a display panel as described in claim 14, characterized in that, The isolation opening includes a first type of isolation opening, and the light-emitting unit includes a first light-emitting unit; the preparation method includes: A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate. The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening. Preferably, the patterning process is performed within the process control time after the etch barrier layer is formed; Preferably, the process control time is 3-10 days.

16. The method for manufacturing a display panel as described in claim 14, characterized in that, The isolation opening includes a first type of isolation opening and a second type of isolation opening; the light-emitting unit includes a first light-emitting unit and a second light-emitting unit whose emitted light color is different from that of the first light-emitting unit; the preparation method includes: A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate. The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening. The first blocking part is oxidized; A second color light-emitting functional layer, a second electrode layer, and a first encapsulation layer are sequentially formed on the substrate in a direction away from the substrate; The first encapsulation layer, the second electrode layer, and the light-emitting functional layer of the second color are patterned, and the second light-emitting unit and the second encapsulation part covering the second light-emitting unit are formed in the second type of isolation opening.

17. The method for manufacturing a display panel as described in claim 14, characterized in that, The isolation opening includes a first type of isolation opening, a second type of isolation opening, and a third type of isolation opening; the light-emitting unit includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit emit light of different colors; the preparation method includes: A first color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etching barrier layer are sequentially formed on the substrate in a direction away from the substrate. The first color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the first light-emitting unit, the first encapsulation portion covering the first light-emitting unit and the first barrier portion covering the first encapsulation portion are formed in the first type of isolation opening. The first blocking part is oxidized; A second color light-emitting functional layer, a second electrode layer, a first encapsulation layer, and an etch barrier layer are sequentially formed on the substrate in a direction away from the substrate. The second color etching barrier layer, the first encapsulation layer, the second electrode layer and the light-emitting functional layer are patterned, and the second light-emitting unit, the second encapsulation portion covering the second light-emitting unit and the second barrier portion covering the second encapsulation portion are formed in the second type of isolation opening; The second blocking part is oxidized; A third color light-emitting functional layer, a second electrode layer, and a first encapsulation layer are sequentially formed on the substrate in a direction away from the substrate; The first encapsulation layer, the second electrode layer, and the light-emitting functional layer of the third color are patterned, and the third light-emitting unit and the third encapsulation part covering the third light-emitting unit are formed in the third type of isolation opening.

18. A display device, characterized in that, The display device includes a display panel as described in any one of claims 1-13.

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