Abrasive particle dispersion for semiconductor polishing process, abrasive slurry composition, and method for manufacturing semiconductor device

Abstract

An embodiment provides an abrasive particle dispersion comprising: water; abrasive particles having an average particle diameter of 50-300 nm; a dispersant; and a pH adjuster, wherein the number of first agglomerated abrasive particles having a particle diameter of 0.69-1.06 μm is 300-3000 / ml.

Description

Abrasive particle dispersion for semiconductor polishing process, polishing slurry composition and method for manufacturing semiconductor devices

[0001] The present invention relates to a polishing particle dispersion for a semiconductor polishing process, a polishing slurry composition, and a method for manufacturing a semiconductor device.

[0002] Chemical Mechanical Polishing (CMP) is a technology that polishes a sample surface to a desired level by injecting a polishing slurry at the interface between the polishing pad and the target surface while causing friction between the pad and the target surface. Modern CMP has become an essential technology for the manufacturing of large-scale semiconductor integrated circuits, planarizing the surfaces of devices such as transistors and interlayer insulating films in multilayer wiring, planarizing various film types such as oxide and nitride films, and forming tungsten or copper wiring. As the integration of semiconductor devices increases and chip sizes decrease, the surface structure of semiconductor devices becomes more complex, and the steps between the layers become larger. Therefore, high-resolution lithography and atomic-level planarization technologies are required for the Chemical Mechanical Polishing (CMP) process applied to the semiconductor device manufacturing process. This CMP process utilizes both physical friction and chemical reactions to planarize the film. Even slight variations in the process components and / or process solutions used can produce drastically different polishing results. Consequently, the precision required for the manufacturing and design of these process components and / or process solutions is continually improving. This semiconductor polishing process is disclosed in Korean Patent No. 10-0946421, among others.

[0003] The present invention provides an abrasive particle dispersion having an improved polishing rate and low defect generation, a polishing slurry composition including the same, and a method for manufacturing a semiconductor device.

[0004] An abrasive particle dispersion according to an embodiment comprises water; abrasive particles having an average particle size of 50 nm to 300 nm; a dispersant; and a pH regulator, wherein the number of first agglomerated abrasive particles having a particle size of 0.69 μm to 1.06 μm is 300 to 3000 particles / mL.

[0005] In the abrasive particle dispersion according to one embodiment, the number of second agglomerated abrasive particles having a particle size of 1.06 μm to 1.19 μm may be 10 to 100 pieces / ml.

[0006] In the abrasive particle dispersion according to one embodiment, the number of third agglomerated abrasive particles having a particle size of 1.19 μm to 1.39 μm may be 10 / mL to 100 / mL.

[0007] In the abrasive particle dispersion according to one embodiment, the number of fourth agglomerated abrasive particles having a particle size exceeding 1.39 μm may be less than 50 / ml.

[0008] In an abrasive particle dispersion according to one embodiment, the abrasive particles include ceria particles, and the half maximum width of the abrasive particles may be 20 nm to 50 nm.

[0009] In an abrasive particle dispersion according to one embodiment, when the concentration of the abrasive particles is 0.02 wt%, the abrasive particle dispersion may have a transmittance of 8% to 12% for light having a wavelength of 500 nm.

[0010] In an abrasive particle dispersion according to one embodiment, when the concentration of the abrasive particles is 0.02 wt%, the abrasive particle dispersion may have a transmittance of 30% to 40% for light having a wavelength of 600 nm.

[0011] In an abrasive particle dispersion according to one embodiment, when the concentration of the abrasive particles is 0.02 wt%, the abrasive particle dispersion may have a transmittance of 55% to 65% for light having a wavelength of 700 nm.

[0012] A method for producing an abrasive particle dispersion according to an embodiment comprises the steps of: preparing a first aqueous dispersion containing finely divided abrasive particles; classifying the finely divided abrasive particles to prepare a second aqueous dispersion containing the abrasive particles; adding a dispersant to the second aqueous dispersion; and adjusting the pH of the second aqueous dispersion, wherein the number of first aggregated abrasive particles having a particle size of 0.69 μm to 1.06 μm in the abrasive particle dispersion is 300 to 3000 particles / mL.

[0013] In a method for producing an abrasive particle dispersion according to an embodiment, in the step of preparing the second aqueous dispersion, the unclassified abrasive particles may be classified through a classifying device, and the classifying device may include a housing; a centrifugal separation unit disposed within the housing and rotating the first aqueous dispersion; an injection unit for injecting the first aqueous dispersion into the centrifugal separation unit; and a discharge unit for discharging the second aqueous dispersion classified from the centrifugal separation unit.

[0014] In a method for producing an abrasive particle dispersion according to one embodiment, the centrifugal separation unit may include an outer wall portion surrounding a rotational axis of the centrifugal separation unit; a catch portion disposed at one end of the outer wall portion and including an open central region; and a bottom portion disposed at the other end of the outer wall portion.

[0015] In a method for producing an abrasive particle dispersion according to one embodiment, the classifying device may further include a driving unit that rotates the centrifugal separation unit at a speed of 1000 rpm to 5000 rpm.

[0016] In a method for manufacturing an abrasive particle dispersion according to one embodiment, the injection unit can inject the first aqueous dispersion into the centrifugal separation unit at a speed of 2 ℓ / min to 20 ℓ / min.

[0017] A polishing slurry composition according to an embodiment comprises water; abrasive particles having an average particle size of 50 nm to 300 nm; a dispersant; and a pH regulator, wherein the number of first agglomerated abrasive particles having a particle size of 0.69 μm to 1.06 μm is 300 to 3000 particles / mL.

[0018] In a polishing slurry composition according to one embodiment, the number of second agglomerated polishing particles having a particle size of 1.06 μm to 1.19 μm may be 10 to 100 particles / mL.

[0019] In a polishing slurry composition according to one embodiment, the number of third agglomerated polishing particles having a particle size of 1.19 μm to 1.39 μm may be 10 to 100 particles / ml.

[0020] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate, wherein the polishing slurry composition comprises water; polishing particles having an average particle diameter of 50 nm to 300 nm; a dispersant; and a pH regulator, wherein in the polishing slurry composition, the number of first agglomerated polishing particles having a particle diameter of 0.69 μm to 1.06 μm is 300 to 3000 pieces / ml.

[0021] In a method for manufacturing a semiconductor device according to one embodiment, the number of second agglomerated abrasive particles having a particle size of 1.06 µm to 1.19 µm may be 10 pieces / ml to 100 pieces / ml.

[0022] In a method for manufacturing a semiconductor device according to one embodiment, the number of third agglomerated abrasive particles having a particle size of 1.19 μm to 1.39 μm may be 10 / ml to 100 / ml.

[0023] The abrasive particle dispersion according to the embodiment comprises a suitable number of first agglomerated abrasive particles having a particle size of 0.69 μm to 1.06 μm. Accordingly, the abrasive particle dispersion according to the embodiment can have an improved polishing rate.

[0024] In particular, the first agglomerated abrasive particles, while in an agglomerated state, can contact the semiconductor substrate and polish the semiconductor substrate. At this time, the first agglomerated abrasive particles can polish the semiconductor substrate while being pulverized. Accordingly, the abrasive particle dispersion according to the embodiment can polish the bulk layer of the semiconductor substrate with an improved polishing rate.

[0025] In addition, since the polishing particle dispersion according to the embodiment contains the first agglomerated polishing particles in an appropriate number, it is possible to suppress defects such as scratches that may occur in the polishing process of the semiconductor substrate.

[0026] Additionally, the abrasive particle dispersion according to the embodiment may include an appropriate number of second agglomerated abrasive particles having a particle size of 1.06 μm to 1.19 μm. The abrasive particle dispersion according to the embodiment may include an appropriate number of third agglomerated abrasive particles having a particle size of 1.19 μm to 1.39 μm.

[0027] Accordingly, the abrasive particle dispersion according to the embodiment can have an improved polishing rate.

[0028] In particular, the second agglomerated abrasive particles and the third agglomerated abrasive particles, while in an agglomerated state, can contact the semiconductor substrate and polish the semiconductor substrate. At this time, the second agglomerated abrasive particles and the third agglomerated abrasive particles can polish the semiconductor substrate while being pulverized. Accordingly, the abrasive particle dispersion according to the embodiment can polish the bulk layer of the semiconductor substrate with an improved polishing rate.

[0029] In addition, since the abrasive particle dispersion according to the embodiment includes the second agglomerated abrasive particles and the third agglomerated abrasive particles in an appropriate number, it is possible to suppress defects such as scratches that may occur in the polishing process of the semiconductor substrate.

[0030] Additionally, in the abrasive particle dispersion according to the embodiment, the number of fourth agglomerated abrasive particles exceeding a particle diameter of 1.39 μm may be less than 50 particles / mL. Accordingly, the abrasive particle dispersion according to the embodiment can suppress defects such as scratches that may occur during the polishing process of the semiconductor substrate.

[0031] Figure 1 is a drawing illustrating a process for manufacturing an abrasive particle dispersion according to an embodiment.

[0032] Figure 2 is a drawing illustrating a process for classifying ceria particles.

[0033] Figure 3 schematically illustrates a device configuration for a method for manufacturing the semiconductor device according to one embodiment.

[0034] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments or examples described below. However, the present invention is not limited to the embodiments or examples disclosed below and may be implemented in various different forms. The embodiments or examples specified below are provided solely to ensure that the disclosure of the present invention is complete and to inform those skilled in the art of the scope of the invention. The scope of the rights of the present invention is defined by the scope of the claims.

[0035] In the drawings, the thickness of some components is enlarged to clearly represent layers or regions, as needed. Additionally, in the drawings, the thickness of some layers and regions is exaggerated for convenience of explanation. Throughout the specification, the same reference numerals designate the same components.

[0036] In addition, when a part such as a layer, film, region, or plate is said to be "on," "on," or "above" another part in this specification, this is interpreted to include not only the case where it is "directly above" another part, but also the case where there is another part in between. When a part is said to be "directly above" another part, this is interpreted to mean that there is no other part in between. In addition, when a part such as a layer, film, region, or plate is said to be "below," "under," or "below" another part, this is interpreted to include not only the case where it is "directly below" another part, but also the case where there is another part in between. When a part is said to be "directly below" another part, this is interpreted to mean that there is no other part in between.

[0037] Hereinafter, implementation examples according to the present invention will be described in detail.

[0038] Figure 1 is a drawing illustrating a process for preparing an abrasive particle dispersion according to an embodiment. Figure 2 is a drawing illustrating a process for classifying ceria particles.

[0039] The abrasive particle dispersion according to the embodiment may include water, abrasive particles, a dispersant, a dispersing aid, a dispersion stabilizer, a fluorinated surfactant, and a pH regulator.

[0040] The abrasive particle dispersion according to the embodiment can be manufactured by the following process.

[0041] A method for producing an abrasive particle dispersion according to an embodiment may include the steps of: preparing a first aqueous dispersion containing finely divided abrasive particles; classifying the finely divided abrasive particles to prepare a second aqueous dispersion containing the abrasive particles; adding a dispersant to the second aqueous dispersion; and adjusting the pH of the second aqueous dispersion.

[0042] In order to manufacture an abrasive particle dispersion according to an embodiment, first, a first aqueous dispersion containing finely divided abrasive particles can be prepared.

[0043] The first aqueous dispersion may include the unclassified abrasive particles and water.

[0044] The above water may include deionized water.

[0045] The above-mentioned fine abrasive particles may include ceria particles.

[0046] The average particle diameter (D50) of the above-mentioned fine abrasive particles may be about 50 nm to about 500 nm, about 60 nm to about 400 nm, about 70 nm to about 450 nm, about 80 nm to about 400 nm, or about 90 nm to about 350 nm.

[0047] In the first aqueous dispersion, the content of the finely divided abrasive particles may be about 0.5 wt% to about 20 wt%, about 1 wt% to about 15 wt%, about 1 wt% to about 15 wt%, or about 2 wt% to about 15 wt%.

[0048] Thereafter, the above-mentioned unclassified abrasive particles may be classified, and a second aqueous dispersion containing the classified abrasive particles may be prepared. The classified abrasive particles may be abrasive particles used for polishing.

[0049] As shown in FIG. 2, a classification device (200) can be used to classify the above-described unclassified abrasive particles.

[0050] The above classification device (200) may include a housing (210), a centrifugal separation unit (220), a driving unit (not shown), an injection unit (240), and a discharge unit (250).

[0051] The housing (210) can accommodate the centrifugal separation unit (220). The housing (210) can surround the centrifugal separation unit (220).

[0052] In addition, the housing (210) can accommodate the first aqueous dispersion. In addition, the housing can be provided with the injection portion (240) and the discharge portion (250).

[0053] The housing (210) may have a cylindrical shape. The housing (210) may have a cylindrical shape extending in the direction of the rotation axis (RA) of the centrifugal separation unit (220).

[0054] The diameter (D1) of the housing (210) may be about 1 m to about 3 m. In addition, the height (H1) of the housing may be about 0.5 m to about 3 m.

[0055] The centrifugal separation unit (220) is placed within the housing (210). The centrifugal separation unit (220) may have a cylindrical shape. The centrifugal separation unit (220) may have a cylindrical shape with a portion open.

[0056] The centrifugal separation unit (220) may include an outer wall unit (221), a catch unit (222), and a bottom unit (223).

[0057] The outer wall portion (221) can surround the rotation axis (RA) of the centrifugal separation unit (220). The outer wall portion (221) can accommodate large particles or aggregated abrasive particles (201) among the finely divided abrasive particles when the centrifugal separation unit (220) rotates.

[0058] The outer wall portion (221) may have a cylindrical shape. The inner diameter (D2) of the outer wall portion (221) may be about 0.5 m to about 1.5 m. In addition, the height (H2) of the outer wall portion (221) may be about 0.5 m to about 1.5 m.

[0059] The above-mentioned catch (222) may be arranged at one end of the outer wall portion (221). The catch (222) may have a circular shape with an open central portion. The catch (222) may have a donut shape extending along one end of the outer wall portion (221).

[0060] The width (W) of the above-mentioned catch (222) may be about 3 cm to about 10 cm, about 3 cm to about 9 cm, or 4 cm to about 7 cm.

[0061] The bottom portion (223) may be positioned at the other end of the outer wall portion (221). The bottom portion (223) may have a disc shape. The bottom portion (223) may block the other end of the outer wall portion (221).

[0062] The above driving unit may be positioned outside the housing (210). The driving unit may be kinetically connected to the centrifugal separation unit (220).

[0063] The driving unit can drive the centrifugal separation unit (220). The driving unit can rotate the centrifugal separation unit (220) around a rotation axis (RA). The driving unit can rotate the centrifugal separation unit (220) at a speed of about 1000 rpm to about 5000 rpm, a speed of about 1500 rpm to about 4500 rpm, or a speed of about 2000 rpm to about 4000 rpm.

[0064] The injection unit (240) can inject the first aqueous dispersion into the centrifugal separation unit (220). The injection unit (240) can extend from the outside of the housing (210) into the centrifugal separation unit (220). The injection unit (240) can include a nozzle that passes through the open area of ​​the catch (222) from the outside of the housing (210).

[0065] Through the injection unit (240), the first aqueous dispersion can be injected into the centrifugal separation unit (220) at a speed of about 2 ℓ / min to about 20 ℓ / min, about 3 ℓ / min to about 15 ℓ / min, or about 4 ℓ / min to about 10 ℓ / min.

[0066] Accordingly, the centrifugal separation unit (220) can rotate the first aqueous dispersion. Accordingly, the unclassified particles contained in the first aqueous dispersion can be classified. Accordingly, the centrifugal separation unit (220) can discharge the second aqueous dispersion containing the classified abrasive particles.

[0067] The above discharge unit (250) can discharge the second aqueous dispersion formed by classifying the first aqueous dispersion to the outside of the housing (210). The discharge unit (250) can be formed on the outside of the outer wall portion (221) and at a location adjacent to the bottom portion (223).

[0068] By the above classification device, the unclassified abrasive particles included in the first aqueous dispersion can be classified, and a second aqueous dispersion containing the classified abrasive particles (202) can be formed.

[0069] More specifically, water is filled inside the housing and the centrifugal separation unit. Thereafter, the centrifugal separation unit can be rotated by the driving unit. Simultaneously, the first aqueous dispersion can be injected into the centrifugal separation unit through the injection unit.

[0070] Accordingly, the injected first aqueous dispersion can be rotated by the rotation of the centrifugal separation unit. As the first aqueous dispersion rotates, centrifugal force can be applied to the first aqueous dispersion.

[0071] Accordingly, large particles and aggregated abrasive particles contained in the first aqueous dispersion can be filtered out by the outer wall portion and the catch portion.

[0072] Additionally, through the injection unit, the first aqueous dispersion can be continuously injected, and the internal pressure of the centrifugal separation unit can be increased. Accordingly, due to the increase in pressure, classified abrasive particles having an appropriate particle size and water can be ejected to the outside through the open area of ​​the catch unit.

[0073] In addition, by increasing the pressure, the abrasive particles and water classified by the centrifugal separator can be discharged through the discharge unit. Accordingly, a second aqueous dispersion containing the classified abrasive particles can be obtained through the discharge unit. That is, the classified abrasive particles can be abrasive particles used in the abrasive particle dispersion according to the embodiment.

[0074] The second aqueous dispersion may contain the abrasive particles in an amount of about 1 wt% to about 20 wt%, about 2 wt% to about 15 wt%, or about 3 wt% to about 12 wt%.

[0075] The particle size distribution of the above abrasive particles can be determined by the injection speed of the first aqueous dispersion, the rotation speed of the centrifugal separation unit, and the width of the catch unit.

[0076] Thereafter, the dispersant, the dispersing aid, the dispersion stabilizer, and the fluorinated surfactant may be added to the second aqueous dispersion.

[0077] Thereafter, the pH regulator is added to the second aqueous dispersion in which the dispersant, the dispersing aid, the dispersion stabilizer, and the fluorine-based surfactant are mixed, so that the pH of the second aqueous dispersion can be adjusted.

[0078] Accordingly, an abrasive particle dispersion according to an embodiment can be manufactured.

[0079] The average particle diameter (D50) of the abrasive particles may be from about 10 nm to about 300 nm. The average particle diameter (D50) of the abrasive particles may be from about 20 nm to about 200 nm. The average particle diameter (D50) of the abrasive particles may be from about 30 nm to about 150 nm. The average particle diameter of the abrasive particles may be from about 50 nm to about 300 nm.

[0080] The particle size of the above abrasive particles can be measured by a Zetasizer from Malvern.

[0081] Since the average particle diameter of the above-mentioned abrasive particles is as above, the abrasive slurry composition according to the embodiment can have an improved polishing rate while reducing defects and dishing.

[0082] The abrasive particles may include ceria. The abrasive particles may be ceria particles.

[0083] The abrasive particles may be included in the abrasive particle dispersion in an amount of about 1 wt% to about 15 wt%, about 2 wt% to about 10 wt%, or about 3 wt% to about 8 wt%, based on the total weight of the abrasive particle dispersion.

[0084] Since the abrasive particles are included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0085] Additionally, the abrasive particles may include first agglomerated abrasive particles.

[0086] The first agglomerated abrasive particles may be particles having a particle size of about 0.69 μm to about 1.06 μm. The first agglomerated abrasive particles may be particles having a particle size of about 5 times to about 7.57 times the average particle size of the abrasive particles.

[0087] The above first agglomerated abrasive particles can be formed by agglomerating abrasive particles having a particle size of about 10 nm to about 300 nm.

[0088] In the abrasive particle dispersion according to the embodiment, the number of the first agglomerated abrasive particles may be from about 300 / mL to about 3000 / mL, from about 300 / mL to about 2500 / mL, from about 500 / mL to about 2000 / mL, or from about 700 / mL to about 1500 / mL.

[0089] Additionally, the abrasive particles may include second agglomerated abrasive particles.

[0090] The second agglomerated abrasive particles may be particles having a particle size of about 1.06 μm to about 1.19 μm. The second agglomerated abrasive particles may be particles having a particle size of about 7.57 to about 8.5 times the average particle size of the abrasive particles.

[0091] The above second agglomerated abrasive particles can be formed by agglomerating abrasive particles having a particle size of about 10 nm to about 300 nm.

[0092] In the abrasive particle dispersion according to the embodiment, the number of the second agglomerated abrasive particles may be about 10 / mL to about 100 / mL, about 10 / mL to about 90 / mL, about 15 / mL to about 80 / mL, or about 20 / mL to about 70 / mL.

[0093] Additionally, the abrasive particles may include third agglomerated abrasive particles.

[0094] The third agglomerated abrasive particles may be particles having a particle size of about 1.19 μm to about 1.39 μm. The third agglomerated abrasive particles may be particles having a particle size of about 8.5 times to about 9.93 times the average particle size of the abrasive particles.

[0095] The above third agglomerated abrasive particles can be formed by agglomerating abrasive particles having a particle size of about 10 nm to about 300 nm.

[0096] In the abrasive particle dispersion according to the embodiment, the number of the third agglomerated abrasive particles may be about 10 / mL to about 100 / mL, about 10 / mL to about 90 / mL, about 15 / mL to about 80 / mL, or about 20 / mL to about 70 / mL.

[0097] Additionally, the abrasive particles may include fourth agglomerated abrasive particles.

[0098] The fourth agglomerated abrasive particles may be particles having a particle size exceeding about 1.39 μm. The fourth agglomerated abrasive particles may be particles having a particle size exceeding about 9.93 times the average particle size of the abrasive particles.

[0099] The fourth agglomerated abrasive particles may be formed by agglomeration of abrasive particles having a particle size of about 10 nm to about 300 nm.

[0100] In the abrasive particle dispersion according to the embodiment, the number of the fourth agglomerated abrasive particles may be less than about 50 / ml, less than about 40 / ml, less than about 30 / ml, less than about 20 / ml, or less than about 10 / ml.

[0101] The number of the first agglomerated abrasive particles, the second agglomerated abrasive particles, the third agglomerated abrasive particles and the fourth agglomerated abrasive particles can be measured by a laser particle counter.

[0102] In more detail, in order to measure the number of the first agglomerated abrasive particles, the second agglomerated abrasive particles, the third agglomerated abrasive particles and the fourth agglomerated abrasive particles, the abrasive particle dispersion according to the embodiment is diluted with water so that the concentration of the abrasive particles is about 1.25×10 -5 wt%. Afterwards, the concentration of the abrasive particles is about 1.25×10 -5 In the diluted abrasive particle dispersion to be wt%, the number of the first agglomerated abrasive particles, the second agglomerated abrasive particles, the third agglomerated abrasive particles and the fourth agglomerated abrasive particles can be measured by the laser particle counter.

[0103] Since the above-mentioned abrasive particles include the first agglomerated abrasive particles, the second agglomerated abrasive particles, and the third agglomerated abrasive particles in the same number as above, it is possible to suppress defect induction while having an improved polishing rate.

[0104] The dispersant may include a polymer. The dispersant may include a polymer resin. The dispersant may be selected from the group consisting of polyacrylic acid, polyphosphoric acid, polymaleic acid, and polymethacrylic acid. The dispersant may include polyacrylic acid.

[0105] The above polyacrylic acid may include a repeating unit represented by the following chemical formula 1.

[0106] [Chemical Formula 1]

[0107]

[0108] Here, n can be 10 to 1000.

[0109] The weight average molecular weight of the dispersant may be from about 1000 g / mol to about 40,000 g / mol, from about 2000 g / mol to about 40,000 g / mol, from about 3000 g / mol to about 30,000 g / mol, from about 3000 g / mol to about 10,000 g / mol, from about 3000 g / mol to about 7,000 g / mol, from about 10,000 g / mol to about 50,000 g / mol, from about 20,000 g / mol to about 30,000 g / mol, or from about 25,000 g / mol to about 35,000 g / mol.

[0110] The pKa of the dispersant may be from about 3 to about 7, from about 2 to about 6, from about 3 to about 6, from about 3 to about 5, from about 3.5 to about 5.5, or from about 3.7 to about 5.3 at a temperature of about 25°C.

[0111] The above dispersant may have a carboxyl group.

[0112] The dispersant can surround the abrasive particles. The dispersant can improve the dispersibility of the abrasive particles.

[0113] The above abrasive particle dispersion may contain the dispersant in an amount of 0.1 wt% to about 1 wt%, in an amount of about 0.2 wt% to about 0.8 wt%, or in an amount of about 0.3 wt% to about 0.7 wt%, based on the total weight.

[0114] The dispersant may be included in the abrasive particle dispersion according to the embodiment in an amount of about 0.1 part by weight to about 0.3 part by weight, about 0.05 part by weight to about 0.5 part by weight, about 0.15 part by weight to about 0.25 part by weight, or about 0.07 part by weight to about 0.4 part by weight, based on 100 parts by weight of the water.

[0115] Since the above dispersant is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0116] The above dispersing aid may include an organic acid.

[0117] The above dispersing aid may include a pyridine derivative.

[0118] The above dispersing aid may be selected from the group consisting of 2-Picolinic acid, pyridine-2,6-dicarboxylic acid, 4-pyridinecarboxylic acid, 6-methyl-2-pyridinecarboxylic acid, or nicotinic acid.

[0119] The pKa of the dispersing aid may be from about 0.5 to about 4, from about 0.6 to about 3, from about 0.6 to about 2.5, from about 0.6 to about 2.0, from about 0.7 to about 1.5, or from about 0.8 to about 1.4 at a temperature of about 25°C.

[0120] The pKa of the dispersing aid may be lower than the pKa of the dispersant. The pKa of the dispersing aid may be lower than the pKa of the dispersant by about 0.1 to about 5, by about 0.2 to about 4, by about 0.3 to about 3, by about 0.4 to about 2, by about 0.4 to about 1.5, or by about 0.5 to about 1.5 at a temperature of about 25°C.

[0121] Since the above-mentioned dispersing aid has a pKa within the above-mentioned range, the above-mentioned dispersing aid, together with the above-mentioned dispersing agent, can improve the dispersibility of the above-mentioned abrasive particles. Since the above-mentioned dispersing aid has a pKa within the above-mentioned range, the above-mentioned dispersing agent can be bonded to the above-mentioned dispersing agent through electrostatic attraction.

[0122] For example, as illustrated in FIG. 2, the dispersant may surround the abrasive particles, and the dispersing aid may surround the abrasive particles, thereby surrounding the dispersant. Accordingly, the abrasive particles may have improved dispersibility.

[0123] The molecular weight of the dispersing aid may be from about 50 g / mol to about 1000 g / mol, from about 60 g / mol to about 800 g / mol, from about 70 g / mol to about 700 g / mol, from about 80 g / mol to about 500 g / mol, or from about 50 g / mol to about 400 g / mol.

[0124] The ratio of the molecular weight of the dispersing aid and the molecular weight of the dispersant may be about 1:5 to about 1:2000, about 1:10 to about 1:1000, about 1:20 to about 1:1000, about 1:30 to about 1:1000, about 1:40 to about 1:1000, or about 1:50 to about 1:1000.

[0125] Since the above-mentioned dispersing agent has a molecular weight within the above-mentioned range, the dispersing agent, together with the dispersing agent, can improve the dispersibility of the abrasive particles. Since the above-mentioned dispersing agent has a molecular weight within the above-mentioned range, the dispersing agent can surround the abrasive particles, and the dispersing agent can surround the abrasive particles while also surrounding the dispersing agent. Accordingly, the abrasive particles can have improved dispersibility.

[0126] The dispersing aid may be included in the abrasive particle dispersion in an amount of about 0.05 wt% to about 5 wt%, about 0.07 wt% to about 2.5 wt%, about 0.1 wt% to about 1 wt%, or about 0.1 wt% to about 0.5 wt%, based on the total weight of the abrasive particle dispersion.

[0127] Since the above dispersing aid is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0128] The above dispersion stabilizer may include a first dispersion stabilizer and a second dispersion stabilizer.

[0129] The first dispersion stabilizer may include at least one glycol selected from the group consisting of ethylene glycol, diethylene glycol, and polyethylene glycol.

[0130] The molecular weight of the first dispersion stabilizer may be from about 40 g / mol to about 1000 g / mol, from about 50 g / mol to about 900 g / mol, from about 50 g / mol to about 700 g / mol, from about 50 g / mol to about 500 g / mol, from about 50 g / mol to about 300 g / mol, or from about 50 g / mol to about 200 g / mol.

[0131] The above first dispersion stabilizer can be represented by the following chemical formula 2.

[0132] [Chemical Formula 2]

[0133]

[0134] In the above chemical formula 2, n may be 1 to 10.

[0135] The pKa of the first dispersion stabilizer may be from about 5 to about 30, from about 7 to about 25, from about 8 to about 20, or from about 9 to about 20 at a temperature of about 25°C.

[0136] The pKa of the first dispersion stabilizer may be greater than the pKa of the dispersant. The pKa of the first dispersion stabilizer may be greater than the pKa of the dispersant by about 1 to about 20, by about 2 to about 15, by about 3 to about 15, or by about 4 to about 13.

[0137] The weight ratio of the dispersant and the first dispersion stabilizer may be from about 1:3 to about 1:10. The weight ratio of the dispersant and the first dispersion stabilizer may be from about 1:4 to about 1:8.

[0138] The second dispersion stabilizer may have a higher molecular weight than the first dispersion stabilizer. The weight average molecular weight of the second dispersion stabilizer may be greater than the molecular weight of the first dispersion stabilizer by about 100 g / mol to about 50,000 g / mol, by about 500 g / mol to about 40,000 g / mol, by about 1,000 g / mol to about 30,000 g / mol, by about 2,000 g / mol to about 20,000 g / mol, or by about 2,000 g / mol to about 10,000 g / mol.

[0139] The weight average molecular weight of the second dispersion stabilizer may be from about 2000 g / mol to about 70000 g / mol, from about 3000 g / mol to about 60000 g / mol, from about 3500 g / mol to about 50000 g / mol, or from about 2000 g / mol to about 50000 g / mol.

[0140] The second dispersion stabilizer may include a nonionic stabilizer and / or a cationic stabilizer.

[0141] The above nonionic stabilizer may be selected from at least one group consisting of polyglycerine or polyvinylpyrrolidone.

[0142] The above polyglycerin can be represented by the following chemical formula 3.

[0143] [Chemical Formula 3]

[0144]

[0145] In the above chemical formula 3, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0146] The weight average molecular weight of the polyglycerin may be from about 100 g / mol to about 3000 g / mol, from about 150 g / mol to about 2000 g / mol, from about 200 g / mol to about 1500 g / mol, or from about 100 g / mol to about 1000 g / mol.

[0147] The weight average molecular weight of the polyvinylpyrrolidone may be from about 3000 g / mol to about 30000 g / mol, from about 4000 g / mol to about 25000 g / mol, from about 5000 g / mol to about 15000 g / mol, or from about 6000 g / mol to about 14000 g / mol.

[0148] The pKa of the nonionic stabilizer may be from about 5 to about 30, from about 7 to about 25, from about 8 to about 20, or from about 9 to about 20 at a temperature of about 25°C.

[0149] The pKa of the nonionic stabilizer may be greater than the pKa of the dispersant. The pKa of the nonionic stabilizer may be greater than the pKa of the dispersant by about 1 to about 20, by about 2 to about 15, by about 3 to about 15, or by about 4 to about 13.

[0150] The cationic stabilizing agent may be at least one selected from the group consisting of polydiallyldimethylammonium chloride, polymethacrylate or polyoxyethylenestearylamine ether.

[0151] The above polydiallyldimethylammonium chloride can be represented by the following chemical formula 4.

[0152] [Chemical Formula 4]

[0153]

[0154] In the above chemical formula 4, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0155] The weight average molecular weight of the above polydiallyldimethylammonium chloride may be about 3000 g / mol to about 30000 g / mol, about 4000 g / mol to about 25000 g / mol, about 5000 g / mol to about 15000 g / mol, or about 6000 g / mol to about 14000 g / mol.

[0156] The above polymethacrylate can be represented by the following chemical formula 5.

[0157] [Chemical Formula 5]

[0158]

[0159] In the above chemical formula 5, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0160] The weight average molecular weight of the above polymethacrylate may be from about 4000 g / mol to about 40000 g / mol, from about 5000 g / mol to about 30000 g / mol, from about 8000 g / mol to about 25000 g / mol, or from about 9000 g / mol to about 20000 g / mol.

[0161] The above polyoxyethylene stearylamine ether can be represented by the following chemical formula 6.

[0162] [Chemical Formula 6]

[0163]

[0164] The pKa of the cationic stabilizer may be from about 3 to about 20, from about 4 to about 15, from about 5 to 12, or from about 6 to about 10 at a temperature of about 25°C.

[0165] The ratio of the pKa of the cationic stabilizer and the pKa of the dispersant may be about 1:0.5 to about 1:2, about 1:0.7 to 1:1.7, or 1:0.8 to 1:1.5.

[0166] The abrasive particle dispersion may contain the first dispersion stabilizer in an amount of 1 wt% to about 15 wt%, in an amount of about 2 wt% to about 15 wt%, or in an amount of about 3 wt% to about 13 wt%, based on the total weight.

[0167] The above abrasive particle dispersion may contain the second dispersion stabilizer in an amount of 1 wt% to about 15 wt%, in an amount of about 2 wt% to about 15 wt%, or in an amount of about 3 wt% to about 13 wt%, based on the total weight.

[0168] Since the first dispersion stabilizer and the second dispersion stabilizer are included in the abrasive particle dispersion in the above ranges, the polishing slurry composition can have an improved polishing rate and reduced defect generation.

[0169] The above fluorinated surfactant may include a nonionic fluorinated polymer compound. The above fluorosurfactant may be at least one selected from the group consisting of sodium sulfonate fluorosurfactant, phosphate ester fluorosurfactant, amine oxide fluorosurfactant, betaine fluorosurfactant, ammonium carboxylate fluorosurfactant, stearate ester fluorosurfactant, quaternary ammonium fluorosurfactant, ethylene oxide / propylene oxide fluorosurfactant, and polyoxyethylene fluorosurfactant.

[0170] The above fluorinated surfactant can be represented by the following chemical formula 7.

[0171] [Chemical Formula 7]

[0172]

[0173] In the above chemical formula 7, n may be 1 to 10, and m may be 1 to 10. In the above chemical formula 7, n may be 2 to 7, and m may be 2 to 7. In the above chemical formula 3, n may be 1 to 5, and m may be 1 to 5.

[0174] The fluorinated surfactant may be included in the abrasive particle dispersion in an amount of about 0.001 to about 0.05 parts by weight, about 0.0001 to about 0.03 parts by weight, about 0.003 to about 0.01 parts by weight, or about 0.004 to about 0.01 parts by weight, based on 100 parts by weight of the water.

[0175] Since the fluorine-based surfactant is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0176] The abrasive particle dispersion according to the embodiment may further include a protective agent.

[0177] The above-mentioned protective agent can protect a semiconductor substrate to be polished. The protective agent can protect the surface of the semiconductor substrate. The protective agent can protect a non-target film on the semiconductor substrate. For example, the protective agent can protect a silicon nitride film included in the semiconductor substrate.

[0178] The protective agent may include an amphoteric substance. The protective agent may include an acidic group and a basic group. The protective agent may include an amine group and a carboxyl group. The protective agent may include glycine, taurine, proline, glutamic acid, serene, valine, or theanine.

[0179] The protective agent may be included in the abrasive particle dispersion in an amount of about 0.3 parts by weight to about 5 parts by weight, about 0.5 parts by weight to about 4 parts by weight, about 0.5 parts by weight to about 3 parts by weight, about 0.5 parts by weight to about 2 parts by weight, or about 0.7 parts by weight to about 1.5 parts by weight, based on 100 parts by weight of the water.

[0180] The pH regulator may include a first pH regulator and a second pH regulator.

[0181] The first pH adjusting agent may comprise a basic compound. The first pH adjusting agent may comprise a basic pH adjusting agent.

[0182] The first pH adjusting agent may be imidazole, alkyl amines, alcohol amines, quaternary amine hydroxides, ammonia, or a combination thereof. In particular, the first pH adjusting agent may be at least one selected from the group consisting of triethanolamine, tetramethylammonium hydroxide (TMAH or TMAOH), or tetraethylammonium hydroxide (TEAH or TEA-OH). In addition, examples of the pH adjusting agent may include at least one selected from the group consisting of ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate, sodium carbonate, triethanolamine, tromethamine, and niacinamide. The first pH adjusting agent may be triethanolamine or aminobutyric acid. The first pH adjusting agent may include triethanolamine.

[0183] The first pH regulator can be mixed with the dispersant to form a neutralized salt. That is, the first pH regulator and the dispersant can react to form the salt. The pH of the salt formed by the reaction of the first pH regulator and the dispersant can be about 8 to about 10. That is, the first pH regulator and the dispersant can react with each other in appropriate amounts to form a salt having a pH of about 8 to about 10.

[0184] The first pH adjusting agent may have a pKa of about 5 to about 10, a pKa of about 4 to about 15, a pKa of about 3 to about 20, a pKa of about 6 to about 10, a pKa of about 5 to about 9, or a pKa of about 6 to about 9 at a temperature of about 25°C.

[0185] The first pH adjuster may be included in the abrasive particle dispersion in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0186] The second pH adjusting agent may comprise an acidic compound. The second pH adjusting agent may comprise an acidic pH adjusting agent.

[0187] The second pH regulator may be selected from at least one group consisting of an inorganic acid selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, and phosphoric acid, or an organic acid selected from the group consisting of acetic acid, citric acid, glutaric acid, gluconic acid, formic acid, lactic acid, malic acid, malonic acid, maleic acid, oxalic acid, phthalic acid, succinic acid, and tartaric acid. The second pH regulator may include nitric acid.

[0188] The second pH adjusting agent may be included in the abrasive particle dispersion in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0189] The pH of the abrasive particle dispersion can be adjusted by the first pH adjuster and the second pH adjuster. The pH of the abrasive particle dispersion can be about 6 to about 11, about 7 to about 10, about 7 to 9, or about 7.5 to about 9.5.

[0190] Since the pH of the above-mentioned abrasive particle dispersion is in the above-mentioned range, the above-mentioned abrasive slurry composition can have an improved polishing rate and reduced defect induction.

[0191] By the above dispersing aid, the zeta potential of the abrasive particle dispersion according to the embodiment can be controlled.

[0192] The zeta potential of the abrasive particle dispersion may be from about -55 mV to about -5 mV, from about -50 mV to about -10 mV, from about -45 mV to about -15 mV, from about -45 mV to about -20 mV, or from about -40 mV to about -25 mV.

[0193] Since the zeta potential of the above-mentioned abrasive particle dispersion is in the above-mentioned range, the above-mentioned abrasive slurry composition can have an improved polishing rate and reduced defect induction.

[0194] The abrasive particle dispersion according to the embodiment can have a first transmittance for light of about 500 nm.

[0195] In the abrasive particle dispersion according to the embodiment, the first transmittance may be about 8% to about 12% or about 9% to about 12%.

[0196] The abrasive particle dispersion according to the embodiment may have a second transmittance for light of about 600 nm.

[0197] In the abrasive particle dispersion according to the embodiment, the second transmittance may be about 30% to about 40% or about 32% to about 39%.

[0198] The abrasive particle dispersion according to the embodiment may have a third transmittance for light of about 700 nm.

[0199] In the abrasive particle dispersion according to the embodiment, the third transmittance may be from about 50% to about 65% or from about 55% to about 65%.

[0200] The abrasive particle dispersion according to the embodiment may have a fourth transmittance for light of about 800 nm.

[0201] In the abrasive particle dispersion according to the embodiment, the fourth transmittance may be from about 65% to about 75% or from about 67% to about 75%.

[0202] The first transmittance, the second transmittance, the third transmittance and the fourth transmittance can be measured based on a concentration of the abrasive particles of about 0.02 wt%.

[0203] More specifically, water is added to the abrasive particle dispersion according to the embodiment, and the abrasive particle dispersion according to the embodiment is diluted so that the concentration of the abrasive particles becomes about 0.02 wt%. Thereafter, the diluted abrasive particle dispersion is injected into a quartz cell having a size of about 10 mm and 3.5 ml, and the first transmittance, the second transmittance, the third transmittance, and the fourth transmittance can be measured.

[0204] The polishing particle dispersion according to the embodiment can have an improved polishing rate and low defect generation because it has the first transmittance, the second transmittance, the third transmittance and the fourth transmittance in the above ranges.

[0205] In particular, since the abrasive particle dispersion according to the embodiment has the first transmittance, the second transmittance, the third transmittance and the fourth transmittance in the ranges described above, it can have the first agglomerated abrasive particles, the second agglomerated abrasive particles and the third agglomerated abrasive particles in the contents described above.

[0206] An additive composition may be added to the polishing particle dispersion according to the embodiment, thereby producing a polishing slurry composition.

[0207] The above additive composition may include the water, the dispersant, the dispersion stabilizer, the reducing agent, the surfactant, the protective agent, and the pH regulator.

[0208] The dispersant may be included in the additive composition in an amount of about 0.03 parts by weight to about 1 part by weight, about 0.04 parts by weight to about 1.1 parts by weight, about 0.05 parts by weight to about 0.8 parts by weight, or about 0.05 parts by weight to about 0.5 parts by weight, based on 100 parts by weight of the water.

[0209] The first dispersion stabilizer may be included in the additive composition in an amount of about 0.1 to 5 parts by weight, about 0.1 to 3 parts by weight, about 0.2 to 2 parts by weight, about 0.3 to 1 part by weight, or about 0.2 to 0.8 parts by weight, based on 100 parts by weight of the water.

[0210] The second dispersion stabilizer may be included in the additive composition in an amount of about 0.1 to 5 parts by weight, about 0.1 to 3 parts by weight, about 0.2 to 2 parts by weight, about 0.3 to 1 part by weight, or about 0.2 to 0.8 parts by weight, based on 100 parts by weight of the water.

[0211] In the above additive composition, the weight ratio of the dispersant and the second dispersion stabilizer may be from about 1:3 to about 1:10. The weight ratio of the dispersant and the second dispersion stabilizer may be from about 1:4 to about 1:8.

[0212] Additionally, in the additive composition, the weight ratio of the first dispersion stabilizer and the second dispersion stabilizer may be about 1:0.5 to about 1:2, about 1:0.7 to about 1:1.5, or about 1:0.8 to about 1:1.3.

[0213] The reducing agent may include a sugar. The sugar may be at least one selected from the group consisting of dextrose, galactose, arabinose, ribose, xylose, maltitol, lactose, maltose, pullulan, or xylitol.

[0214] In addition, the above sugars are sucrose, lactulose, lactose, trehalose, maltose, cellobiose, kojibiose, nigerose, isomaltose, isotrehalose, neotrehalose, sophorose, laminaribiose, gentibiose, turanose, maltulose, paratinose, gentiobiurose, mannobiose, melibiose, melibiurose, neolactose, galactosucrose, sylabiose, rutinose, rutinurose, bicyanose, gyrobiose, primerose, trehalosamine, maltitol, cellobionic acid, lactosamine, lactosediamine, lactobionic acid, lactitol, hyalobiuronic acid, sucralose, nigerotriose, maltotriose, melecitose, Maltotriulose, raffinose, kestose, nystose, nigerotetraose, stachyose, amylose, dextran, dextrin, maltodextrin, cluster dextrin, cycloawaodorin, laminaran, callose, PGA, pectin, glucomannan, gellan gum, curdlan, psyllium, locust bean gum, pullulan, alginic acid, tamarind, carrageenan, CMC, xanthan gum, gum arabic, guar gum, pectin, soybean polysaccharide, fructan, glycogen, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, isomaltooligosaccharide, galactooligosaccharide, xylooligosaccharide, soybean oligosaccharide, nigerooligosaccharide, At least one may be selected from the group consisting of oligosaccharides or fructooligosaccharides.

[0215] Additionally, the sugar may be at least one selected from the group consisting of amylose, dextran, dextrin, maltodextrin, cluster dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, maltose, isomaltose, maltotriose, or stachyose.

[0216] The above sugars may include at least one from the group consisting of dextrose, fructose or galactose.

[0217] The reducing agent may be included in the additive composition in an amount of about 1 part by weight to 10 parts by weight, about 0.5 parts by weight to about 7 parts by weight, about 1.5 parts by weight to about 8 parts by weight, about 2 parts by weight to about 10 parts by weight, or about 2 parts by weight to about 8 parts by weight, based on 100 parts by weight of the water.

[0218] The weight ratio of the dispersant and the reducing agent may be from about 1:50 to about 1:500. The weight ratio of the dispersant and the reducing agent may be from about 1:60 to about 1:300.

[0219] The fluorinated surfactant may be included in the additive composition in an amount of about 0.001 to about 0.05 parts by weight, about 0.0001 to about 0.03 parts by weight, about 0.003 to about 0.01 parts by weight, or about 0.004 to about 0.01 parts by weight, based on 100 parts by weight of the water.

[0220] The protective agent may be included in the additive composition in an amount of about 0.3 parts by weight to about 5 parts by weight, about 0.5 parts by weight to about 4 parts by weight, about 0.5 parts by weight to about 3 parts by weight, about 0.5 parts by weight to about 2 parts by weight, or about 0.7 parts by weight to about 1.5 parts by weight, based on 100 parts by weight of the water.

[0221] The first pH regulator may be included in the additive composition in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0222] The second pH adjusting agent may be appropriately added to adjust the pH of the additive composition. The second pH adjusting agent may be added to the additive composition in an appropriate amount so that the pH of the additive composition is about 7 to about 10.

[0223] The second pH adjusting agent may have a pKa of about -2 to about 1, a pKa of about -2 to about 5, a pKa of about -2 to about 3, a pKa of about -2 to about 0, a pKa of about -2 to about -1, a pKa of about 0 to about 4, or a pKa of about 2 to about 5 at a temperature of about 25°C.

[0224] The sum of the pKa of the first pH regulator and the pKa of the second pH regulator may be from about 4 to about 9, from about 3 to about 11, from about 3 to about 10, from about 4 to about 8, from about 5 to about 8, or from about 5 to about 7.5 at a temperature of about 25°C.

[0225] Since the first pH regulator and the second pH regulator have pKa in the above range, they can improve the performance of the dispersant, the dispersion stabilizer, the fluorine-based surfactant, the protective agent, and the reducing agent.

[0226] The above additive composition can be used in a process for manufacturing a semiconductor device. The above additive composition can be used in a chemical mechanical polishing process. The above additive composition can be uniformly mixed with the above polishing particle dispersion to form the above polishing slurry composition. The above polishing slurry composition can be used in the above chemical mechanical polishing process.

[0227] The above additive composition, deionized water, and the above polishing particle dispersion can be mixed to prepare the above polishing slurry composition.

[0228] In the above polishing slurry composition, the additive composition and the polishing particle dispersion may be mixed in a weight ratio of about 3:1 to about 1:3, a weight ratio of about 2.5:1 to about 1:2.5, a weight ratio of about 2:1 to about 1:2, or a weight ratio of about 1.5:1 to about 1:1.5.

[0229] The above polishing slurry composition can have an improved polishing rate and reduced defect generation because it includes the above additive composition and the above polishing particle dispersion in the above contents.

[0230] Alternatively, the polishing slurry composition may be formed by mixing deionized water and the polishing particle dispersion. That is, the polishing slurry composition may be formed by adding only deionized water to the polishing particle dispersion without adding the additive composition.

[0231] Additionally, in the polishing slurry composition, the deionized water and the polishing particle dispersion may be mixed in a weight ratio of about 3:1 to about 20:1, a weight ratio of about 5:1 to about 15:1, a weight ratio of about 7:1 to about 15:1, or a weight ratio of about 5:1 to about 15:1.

[0232] The above polishing slurry composition may include the abrasive particles in an amount of about 0.05 wt% to about 1 wt%, in an amount of about 0.1 wt% to about 1 wt%, or in an amount of about 0.15 wt% to about 0.8 wt%, based on the total weight.

[0233] The polishing slurry composition may include the dispersant in an amount of about 0.01 wt% to about 0.1 wt%, about 0.02 wt% to about 0.08 wt%, or about 0.03 wt% to about 0.08 wt%, based on the total weight.

[0234] The polishing slurry composition may include the dispersing aid in an amount of about 0.005 wt% to about 0.5 wt%, about 0.007 wt% to about 0.25 wt%, about 0.01 wt% to about 0.1 wt%, or about 0.01 wt% to about 0.05 wt%, based on the total weight.

[0235] The polishing slurry composition may contain the first dispersion stabilizer in an amount of from about 0.1 wt% to about 1.5 wt%, from about 0.2 wt% to about 1.5 wt%, or from about 0.3 wt% to about 1.3 wt%, based on the total weight.

[0236] The polishing slurry composition may include the second dispersion stabilizer in an amount of from about 0.1 wt% to about 1.5 wt%, from about 0.2 wt% to about 1.5 wt%, or from about 0.3 wt% to about 1.3 wt%, based on the total weight.

[0237] The fluorinated surfactant may be included in the polishing slurry composition in an amount of about 0.0001 to about 0.005 parts by weight, about 0.00001 to about 0.003 parts by weight, about 0.0003 to about 0.001 parts by weight, or about 0.0004 to about 0.001 parts by weight, based on 100 parts by weight of the water.

[0238] The above polishing slurry composition has an improved polishing rate and can reduce the occurrence of defects because it contains the polishing particles, the dispersant, the dispersing aid, the dispersion stabilizer, the fluorine-based surfactant, and the reducing agent in the above range of potentials.

[0239] The first pH adjuster may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to about 0.5 parts by weight, about 0.03 parts by weight to about 0.4 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, or about 0.08 parts by weight to about 0.3 parts by weight, based on 100 parts by weight of the water.

[0240] The second pH adjuster may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to about 0.5 parts by weight, about 0.03 parts by weight to about 0.4 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, or about 0.08 parts by weight to about 0.3 parts by weight, based on 100 parts by weight of the water.

[0241] The pH of the polishing slurry composition can be adjusted by the first pH adjuster and the second pH adjuster. The pH of the polishing slurry composition can be about 6 to about 11, about 7 to about 10, or about 7.5 to about 9.5.

[0242] Since the pH of the above polishing slurry composition is within the above range, it can have an improved polishing rate and reduced defect generation.

[0243] The reducing agent may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to 0.5 parts by weight, about 0.025 parts by weight to about 0.35 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, about 0.1 parts by weight to about 0.5 parts by weight, or about 0.1 parts by weight to about 0.4 parts by weight, based on 100 parts by weight of the water.

[0244] The zeta potential of the polishing slurry composition may be from about -55 mV to about -5 mV, from about -50 mV to about -10 mV, from about -45 mV to about -15 mV, from about -45 mV to about -20 mV, or from about -40 mV to about -25 mV.

[0245] Since the zeta potential of the above polishing slurry composition has the above range, the above polishing slurry composition can have an improved polishing rate and reduce the occurrence of defects.

[0246] Additionally, in the polishing slurry composition, the number of the first agglomerated polishing particles may be from about 30 / mL to about 300 / mL, from about 30 / mL to about 250 / mL, from about 50 / mL to about 200 / mL, or from about 70 / mL to about 150 / mL.

[0247] In the above polishing slurry composition, the number of the second agglomerated polishing particles may be about 1 / mL to about 10 / mL, about 1 / mL to about 9 / mL, about 1 / mL to about 8 / mL, or about 2 / mL to about 7 / mL.

[0248] In the above polishing slurry composition, the number of the third agglomerated abrasive particles may be about 1 / mL to about 10 / mL, about 1 / mL to about 9 / mL, about 1 / mL to about 8 / mL, or about 2 / mL to about 7 / mL.

[0249] In the above polishing slurry composition, the number of the fourth agglomerated polishing particles may be less than about 5 / mL, less than about 4 / mL, less than about 3 / mL, less than about 2 / mL, or less than about 1 / mL.

[0250] Since the polishing slurry composition includes the first agglomerated abrasive particles, the second agglomerated abrasive particles, and the third agglomerated abrasive particles in the above ranges, the polishing slurry composition can have an improved polishing rate and low defect generation.

[0251] In the above polishing slurry composition, the first transmittance may be about 8% to about 12% or about 9% to about 12%.

[0252] In the above polishing slurry composition, the second transmittance may be about 30% to about 40% or about 32% to about 39%.

[0253] In the above polishing slurry composition, the third transmittance may be from about 50% to about 65% or from about 55% to about 65%.

[0254] In the above polishing slurry composition, the fourth transmittance may be about 65% to about 75% or about 67% to about 75%.

[0255] Since the above polishing slurry composition has the first transmittance, the second transmittance, the third transmittance and the fourth transmittance in the above ranges, it can have an improved polishing rate and low defect induction.

[0256] FIG. 3 schematically illustrates a device configuration for a method for manufacturing a semiconductor device according to one embodiment. Referring to FIG. 3, the method for manufacturing a semiconductor device includes a step of arranging a polishing surface (111) of a polishing pad (110) so that the polishing surface of a polishing target (130) is in contact with the polishing surface; and a step of injecting a polishing slurry composition (150) onto the polishing surface (111).

[0257] The polishing target (130) may include a semiconductor wafer having a silicon nitride film and a silicon oxide film. Specifically, the polishing surface may include a surface requiring simultaneous polishing of the silicon nitride film and the silicon oxide film. Since the polishing target (130) and its polishing surface have these characteristics, the polishing slurry composition

[0258] The above polishing pad (110) may have a surface hardness measured on the polishing surface (111) of about 50 to about 70, for example, about 50 to about 65, for example, about 55 to about 65 in terms of Shore D hardness. A method for measuring the Shore D surface hardness on the polishing surface may be widely applied using a method commonly used in the relevant technical field, but for example, a sample may be prepared by cutting the polishing pad into a size of 2 cm × 2 cm (thickness: 2 mm), and then left to stand for 16 hours in an environment of a temperature of 25°C and a humidity of 50±5%, and then measured using a hardness meter (D-type hardness meter). When the hardness on the polishing surface (111) satisfies this range, the semiconductor process composition (150) can flow at the contact interface between the polishing surface (111) and the polishing target (130) to exhibit a physically appropriate elastic correlation with the polishing pad (110), and as a result, the semiconductor device manufactured by the method for manufacturing the semiconductor device can be more advantageous in exhibiting high polishing flatness without defects such as scratches.

[0259] The polishing pad (110) may include a groove or a groove on the polishing surface (111). The groove or groove is a configuration for controlling the fluidity of the semiconductor process composition (150) injected onto the polishing surface (111), and its shape is not particularly limited, but its depth may be, for example, about 300 ㎛ to about 900 ㎛, for example, about 300 ㎛ to about 850 ㎛, for example, about 400 ㎛ to about 850 ㎛, for example, about 450 ㎛ to about 850 ㎛, for example, about 500 ㎛ to about 800 ㎛, for example, about 550 ㎛ to about 800 ㎛, for example, about 600 ㎛ to about 800 ㎛. In addition, the width of the groove or the groove may be about 100 µm to about 600 µm, for example, about 200 µm to about 600 µm, for example, about 200 µm to about 550 µm, for example, about 300 µm to about 550 µm, for example, about 350 µm to about 550 µm. When the depth and width of the groove or the groove satisfy this range, it may be more advantageous in providing optimized fluidity to the composition for the semiconductor process.

[0260] The fact that the polishing surface (111) of the polishing pad (110) and the polishing target surface (130) come into contact with each other can be interpreted to include not only cases where they are in direct physical contact with each other, but also cases where they are indirectly in contact with each other through the semiconductor process composition.

[0261] The step of injecting the semiconductor process composition (150) onto the polishing surface (111) may be specifically performed by injecting the semiconductor process composition (150) onto the polishing surface (111) through a supply nozzle (140). In one embodiment, the flow rate of the semiconductor process composition (150) injected through the supply nozzle (140) may be about 10 ml / min to about 1,000 ml / min, for example, about 10 ml / min to about 800 ml / min, for example, about 50 ml / min to about 500 ml / min, for example, about 80 ml / min to about 400 ml / min, for example, about 100 ml / min to about 300 ml / min, for example, about 150 ml / min to about 300 ml / min. When the semiconductor process composition (150) satisfying the above formula 1, the above formula 2 and / or the above formula 3 in the above-mentioned range is injected onto the polishing surface (111) at a flow rate in the above-mentioned range, the friction behavior between the polishing surface (111) and the surface to be polished through this may be more advantageous in improving the polishing performance of the surface to be polished. More specifically, it may be more advantageous in achieving the desired polishing selectivity and simultaneously implementing the effect of preventing defects such as scratches due to the solid content in the semiconductor process composition.

[0262] The method for manufacturing the semiconductor device includes a step of polishing the surface to be polished while relatively rotating the polishing pad (110) and the polishing target (130). Referring to FIG. 3, the polishing pad (110) may be mounted on a platen (120) such that the polishing surface (111) becomes the uppermost surface, and the polishing target (130) may be accommodated in a carrier (160) such that the surface to be polished becomes the lowermost surface. The polishing pad (110) and the polishing target (130) may rotate at the same speed and trajectory as the platen (120) and the carrier (160), respectively, rotate. Relative rotation of the polishing pad (110) and the polishing target (130) means that they rotate while the polishing surface and the surface to be polished are arranged to be in contact with each other. The rotation direction of the polishing pad (110) and the rotation direction of the polishing target (130) may be opposite to each other or may be in the same direction.

[0263] In one embodiment, the rotation speeds of the polishing pad (110) and the polishing target (130) may each independently be about 10 rpm to about 500 rpm, for example, about 30 rpm to about 200 rpm. When the polishing pad (110) and the polishing target (130) each rotate at a rotation speed within the above range, the frictional behavior of the polishing surface (111) and the surface to be polished due to the centrifugal force thereof is mutually linked with the semiconductor process composition (150) injected onto the polishing surface (111), so that the surface to be polished can be polished to have a high polishing flatness, and it may be more advantageous to polish without defects.

[0264] In one embodiment, the rotation speed of the polishing target (130) may be greater than the rotation speed of the polishing pad (110). By rotating the polishing target (130) at a higher speed than the polishing pad (110), polishing stability can be secured, and at the same time, the polishing surface of the polishing target (130) can be more advantageously polished without defects.

[0265] In one embodiment, the method for manufacturing the semiconductor device may relatively rotate the polishing pad (110) and the polishing target (130) under conditions in which the polishing surface is pressed against the polishing surface (111). The load applied to the polishing surface against the polishing surface (111) may be, for example, about 0.01 psi to about 20 psi, for example, about 0.1 psi to about 15 psi.

[0266] The method for manufacturing the semiconductor device may further include a step of processing the polishing surface (111) using a conditioner (170). The polishing surface (111) of the polishing pad (110) is subjected to a chemical influence as the semiconductor process composition (150) is continuously supplied, and at the same time, is subjected to a physical influence due to physical contact with the surface to be polished of the polishing object (130). If the state of the polishing surface (111) is modified due to such chemical / physical influences, it may be difficult to uniformly maintain polishing performance for the surface to be polished. The conditioner (170) serves as a means for processing the polishing surface (111) during the polishing process, and can contribute to uniformly maintaining the polishing surface (111) in a state suitable for polishing throughout the polishing process.

[0267] For example, the conditioner (170) may perform the function of roughening the polishing surface (111) while rotating at a predetermined speed. The rotation speed of the conditioner (170) may be, for example, about 10 rpm to about 500 rpm, for example, about 50 rpm to about 500 rpm, for example, about 100 rpm to about 500 rpm, for example, about 200 rpm to about 500 rpm, for example, more than about 200 rpm and less than about 400 rpm.

[0268] The conditioner (170) can rotate while applying a predetermined pressure to the polishing surface (111) of the polishing pad (110). For example, the pressure applied to the polishing surface (111) of the conditioner (170) may be about 1 psi to about 20 psi, for example, about 1 psi to about 15 psi, for example, about 5 psi to about 15 psi, for example, about 5 psi to about 10 psi.

[0269] By performing surface treatment under the process conditions described above through the conditioner (170), the polishing surface (111) can maintain an optimal surface state throughout the polishing process, and the effect of extending the polishing life can be obtained under the application conditions of the semiconductor process composition (150).

[0270] The abrasive particle dispersion according to the embodiment comprises a suitable number of first agglomerated abrasive particles having a particle size of 0.69 μm to 1.06 μm. Accordingly, the abrasive particle dispersion according to the embodiment can have an improved polishing rate.

[0271] In particular, the first agglomerated abrasive particles, while in an agglomerated state, can contact the semiconductor substrate and polish the semiconductor substrate. At this time, the first agglomerated abrasive particles can polish the semiconductor substrate while being pulverized. Accordingly, the abrasive particle dispersion according to the embodiment can polish the bulk layer of the semiconductor substrate with an improved polishing rate.

[0272] In addition, since the polishing particle dispersion according to the embodiment contains the first agglomerated polishing particles in an appropriate number, it is possible to suppress defects such as scratches that may occur in the polishing process of the semiconductor substrate.

[0273] Additionally, the abrasive particle dispersion according to the embodiment may include an appropriate number of second agglomerated abrasive particles having a particle size of 1.06 μm to 1.19 μm. The abrasive particle dispersion according to the embodiment may include an appropriate number of third agglomerated abrasive particles having a particle size of 1.19 μm to 1.39 μm.

[0274] Accordingly, the abrasive particle dispersion according to the embodiment can have an improved polishing rate.

[0275] In particular, the second agglomerated abrasive particles and the third agglomerated abrasive particles, while in an agglomerated state, can contact the semiconductor substrate and polish the semiconductor substrate. At this time, the second agglomerated abrasive particles and the third agglomerated abrasive particles can polish the semiconductor substrate while being pulverized. Accordingly, the abrasive particle dispersion according to the embodiment can polish the bulk layer of the semiconductor substrate with an improved polishing rate.

[0276] In addition, since the abrasive particle dispersion according to the embodiment includes the second agglomerated abrasive particles and the third agglomerated abrasive particles in an appropriate number, it is possible to suppress defects such as scratches that may occur in the polishing process of the semiconductor substrate.

[0277] Additionally, in the abrasive particle dispersion according to the embodiment, the number of fourth agglomerated abrasive particles exceeding a particle diameter of 1.39 μm may be less than 50 particles / mL. Accordingly, the abrasive particle dispersion according to the embodiment can suppress defects such as scratches that may occur during the polishing process of the semiconductor substrate.

[0278] Specific embodiments of the present invention are presented below. However, the embodiments described below are merely intended to specifically illustrate or explain the present invention, and the scope of the rights of the present invention is not construed as being limited thereby, and the scope of the rights of the present invention is determined by the claims.

[0279]

[0280] Manufacturing example

[0281] Finely divided ceria particle dispersion (average particle size 140 nm, Solvay product, ceria particle content 10 wt%)

[0282] Polyacrylic acid (PAA, weight average molecular weight 30,000 g / mol, pKa 4.5) (Polyscience product)

[0283] ethylene glycol (EG)

[0284] 4,4,6,6,8,8,8-Heptafluorooctan-1-ol (FS)

[0285] 2-Pyridinecarboxylic acid (PA, Waco)

[0286]

[0287] Classified ceria particle aqueous dispersion #1

[0288] A classification device as shown in Fig. 2 was prepared. In the classification device, the housing diameter (D1) was 2 m, the inner diameter (D2) of the centrifugal separation unit was about 0.9 m, the width (W) of the catch was about 5 cm, and the height (H2) of the centrifugal separation unit was about 1 m. Deionized water was filled in the housing, and the centrifugal separation unit was rotated at a speed of about 3000 rpm. Thereafter, the unclassified ceria particle dispersion was injected into the centrifugal separation unit at a flow rate of about 7 ℓ / min. Thereafter, a classified ceria particle aqueous dispersion #1 having a concentration of about 8 wt% was obtained through the discharge unit.

[0289] Abrasive Particle Dispersion #1

[0290] About 100 parts by weight of a classified ceria particle aqueous dispersion, about 0.5 parts by weight of polyacrylic acid, about 0.175 parts by weight of 2-picoline carboxylic acid, about 8.3 parts by weight of ethylene glycol, and about 0.005 parts by weight of 4,4,6,6,8,8,8-heptafluorooctan-1-ol were uniformly mixed. Thereafter, ammonia was added to the mixture to adjust the pH to 8, thereby producing an abrasive particle dispersion.

[0291]

[0292] Abrasive particle dispersions #2 to #6

[0293] As shown in Table 1 below, each component was uniformly mixed to prepare abrasive particle dispersions #2 to #5.

[0294] Classification Polishing Particle Dispersion #1 (parts by weight) Polishing Particle Dispersion #2 (parts by weight) Polishing Particle Dispersion #3 (parts by weight) Polishing Particle Dispersion #4 (parts by weight) Polishing Particle Dispersion #5 (parts by weight) Polishing Particle Dispersion #6 (parts by weight) Ceria Particle Aqueous Dispersion #1 #1 #1 #1 #1 Finely Classified Ceria Particle Dispersion Ceria Particles 45.5 10 3.5 3.5 3.5 PAA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 PA 0.175 0.175 0.175 0.175 0.175 EG 8.3 8.3 8.3 8.3 8.3 FS 0.00 5 0.00 5 0.00 5 0.00 5 0.00 5 0.00 5 0.00 5 pH 8 8 8 8 9 8

[0295] <Examples and Comparative Examples>Example 1

[0296] Abrasive particle dispersion #1 and deionized water were uniformly mixed at a weight ratio of about 1:10 at a speed of about 150 rpm for about 1 hour, thereby preparing abrasive slurry composition #1.

[0297] Examples 2 to 5 and comparative examples

[0298] As shown in Table 2 below, the additive composition #1 and the abrasive particle dispersion were mixed to prepare a polishing slurry composition.

[0299] Distinctive components (weight ratio) Example 1 Polishing particle dispersion #1 + deionized water (1:10) Example 2 Polishing particle dispersion #2 + deionized water (1:10) Example 3 Polishing particle dispersion #3 + deionized water (1:10) Example 4 Polishing particle dispersion #4 + deionized water (1:10) Example 5 Polishing particle dispersion #5 + deionized water (1:10) Comparative example Polishing particle dispersion #6 + deionized water (1:10)

[0300] Evaluation

[0301] Measurement Example 1: Measurement of hydrogen ion concentration (pH)

[0302] The pH of each of the above polishing particle dispersion, additive composition and polishing slurry composition was measured using a hydrogen ion concentration (pH) measuring device (Horiba, Laqua) while stirring at 200 rpm under room temperature conditions of 20°C to 24°C.

[0303] Measurement Example 2: Polishing rate measurement

[0304] For each of the above examples and comparative examples, a silicon oxide wafer having a thickness of about 20,000 Å and a silicon nitride wafer having a thickness of about 2,000 Å were prepared. As illustrated in Fig. 1, the wafers were accommodated in a carrier (160) with the polishing surface facing downward as a polishing target (130). After positioning the carrier (160) so that the polishing surface and the polishing surface (111) are in contact with each other on a platen (120) on which a polishing pad (110, SK Enpulse HD-319B) is mounted so that its polishing surface (111) faces upward, each component is operated for 60 seconds at a pressing pressure of 2 psi on the polishing surface of the carrier (160), a rotation speed of 93 rpm of the carrier (160), and a rotation speed of 87 rpm of the platen (120), and polishing is performed while applying the semiconductor process compositions of each of the examples and comparative examples to the polishing surface at a flow rate of 250 ml / min. At the same time, the polishing surface is processed by operating a conditioner (170, Saesol Diamond SKC-CI45) under the conditions of a rotation speed of 250 rpm and a pressing pressure of 8 psi. The thickness of the above wafer after polishing was measured, and the polishing time and the thickness of the wafer before and after polishing were used to calculate the polishing rate value (Rox) in units of Å / min.

[0305] Measurement Example 3: Scratch

[0306] Boron and phosphorus-doped silicon oxide wafers were prepared and polished using the same method as the polishing rate measurement described above. Thereafter, defects in the polished wafers were measured using an AIT XP from KLA / TENCOR.

[0307] Measurement Example 4: Zeta potential and ceria particle size measurement

[0308] Nitric acid or ammonia was added to the abrasive particle dispersions prepared in the manufacturing examples to adjust the pH as follows. Thereafter, the zeta potential and size of the ceria particles included in the abrasive particle dispersions prepared in the manufacturing examples were measured at different pH levels using a zeta potential meter (Malvern).

[0309] Measurement Example 5: Number of agglomerated ceria particles and half-maximum width

[0310] Deionized water was added to the abrasive particle dispersions #1 to #6 so that the content of ceria particles was 1.25 × 10 -5 Diluted to wt%.

[0311] Afterwards, in the above diluted abrasive particle dispersions, the number of particles by particle size was measured using a laser particle counter (PSS, Accusizer FX A780), and the particle size distribution was measured.

[0312] Measurement Example 6: Transmittance

[0313] Deionized water was added to the abrasive particle dispersions #1 to #6, and the ceria particle content was diluted to 0.02 wt%. Thereafter, the diluted abrasive particle dispersions were placed in a quartz cell of about 10 mm and about 3.5 ml, and the transmittance was measured by wavelength using a spectrophotometer (JSACO, V670).

[0314] As shown in Table 3 below, the average particle diameter and the half-width of the particle size distribution were measured.

[0315] ClassificationAverage particle size (nm)Half width (nm)Abrasive particle dispersion #1 137.6 39.21Abrasive particle dispersion #2 135.8 4 0.52Abrasive particle dispersion #3 137.4 4 1.67Abrasive particle dispersion #4 133.9 4 3.08Abrasive particle dispersion #5 134.6 15.13Abrasive particle dispersion #6 145.2 5 2.49

[0316] As shown in Table 4 below, the number of aggregated particles in the abrasive particle dispersion was measured.

[0317] Classification 1 Agglomerated abrasive particles 0.69㎛~1.06㎛(units / ㎖) Classification 2 Agglomerated abrasive particles 1.06㎛~1.19㎛(units / ㎖) Classification 3 Agglomerated abrasive particles 1.19㎛~1.39㎛(units / ㎖) Classification 4 Agglomerated abrasive particles 1.39㎛~(units / ㎖) Abrasive particle dispersion #11005484326 Abrasive particle dispersion #21143525022 Abrasive particle dispersion #31185484523 Abrasive particle dispersion #41084434029 Abrasive particle dispersion #51030322820 Abrasive particle dispersion #630881047148

[0318] As shown in Table 5 below, the transmittance of the abrasive particle dispersion was measured.

[0319] Classification 500nm Transmittance (%) 600nm Transmittance (%) 700nm Transmittance (%) 800nm ​​Transmittance (%) Polishing Particle Dispersion #110.835.257.071.8 Polishing Particle Dispersion #29.134.85269.3 Polishing Particle Dispersion #39.432.753.665.9 Polishing Particle Dispersion #411.236.458.370.8 Polishing Particle Dispersion #510.933.557.270.2 Polishing Particle Dispersion #67.0427.548.664.2

[0320] As shown in Table 6 below, in the polishing slurry compositions according to the examples and comparative examples, the oxide film polishing rate, nitride film polishing rate, selectivity of the oxide film to the nitride film, and defects were measured.

[0321] Classification Oxide film polishing rate (Å / min) Scratch (ea) Example 133185 Example 2328911 Example 3325818 Example 432966 Example 5288415 Comparative example 335925

[0322] As described in Table 6, the polishing slurry composition according to the examples can have improved polishing rates and low scratches.

Claims

1. Water; Abrasive particles having an average particle size of 50 nm to 300 nm; dispersant; and Contains pH adjuster, An abrasive particle dispersion having a first agglomerated abrasive particle size of 0.69 ㎛ to 1.06 ㎛ in a number of 300 to 3000 particles / mL.

2. An abrasive particle dispersion in which the number of second agglomerated abrasive particles having a particle size of 1.06 ㎛ to 1.19 ㎛ is 10 to 100 particles / mL in the first paragraph.

3. An abrasive particle dispersion in which the number of third agglomerated abrasive particles having a particle size of 1.19 ㎛ to 1.39 ㎛ is 10 to 100 particles / mL in the second paragraph.

4. An abrasive particle dispersion in which the number of fourth agglomerated abrasive particles exceeding a particle size of 1.39 ㎛ is less than 50 particles / mL in the third paragraph.

5. An abrasive particle dispersion according to claim 1, wherein the abrasive particles include ceria particles, and the half-width of the abrasive particles is 20 nm to 50 nm.

6. An abrasive particle dispersion having a transmittance of 8% to 12% for light having a wavelength of 500 nm, based on a concentration of 0.02 wt% of the abrasive particles in the first paragraph.

7. In the 6th paragraph, an abrasive particle dispersion having a transmittance of 30% to 40% for light having a wavelength of 600 nm, based on a concentration of the abrasive particles of 0.02 wt%.

8. In the 7th paragraph, an abrasive particle dispersion having a transmittance of 55% to 65% for light having a wavelength of 700 nm, based on a concentration of the abrasive particles of 0.02 wt%.

9. A step of preparing a first aqueous dispersion containing finely divided abrasive particles; A step of classifying the above-mentioned unclassified abrasive particles to prepare a second aqueous dispersion containing the abrasive particles; A step of adding a dispersant to the second aqueous dispersion; and Comprising a step of adjusting the pH of the second aqueous dispersion, A method for producing an abrasive particle dispersion having a first agglomerated abrasive particle size of 0.69 ㎛ to 1.06 ㎛ in a number of 300 to 3000 particles / mL.

10. In the step of preparing the second aqueous dispersion in paragraph 9, The above-mentioned unclassified abrasive particles are classified through a classifying device, The above classification device housing; A centrifugal separation unit disposed within the housing and rotating the first aqueous dispersion; An injection unit for injecting the first aqueous dispersion into the centrifugal separation unit; and A method for producing an abrasive particle dispersion comprising a discharge unit for discharging the second aqueous dispersion classified from the centrifugal separation unit.

11. In the 10th paragraph, the centrifugal separation unit An outer wall portion surrounding the rotation axis of the centrifugal separation unit; A hanging portion disposed at one end of the outer wall portion and including an open central area; and A method for producing an abrasive particle dispersion comprising a bottom portion arranged at the other end of the outer wall portion.

12. A method for producing an abrasive particle dispersion according to claim 11, wherein the classifying device further includes a driving unit that rotates the centrifugal separation unit at a speed of 1000 rpm to 5000 rpm.

13. A method for producing an abrasive particle dispersion in claim 12, wherein the injection unit injects the first aqueous dispersion into the centrifugal separation unit at a speed of 2 ℓ / min to 20 ℓ / min.

14. Water; Abrasive particles having an average particle size of 50 nm to 300 nm; dispersant; and Contains pH adjuster, An abrasive slurry composition having a number of first agglomerated abrasive particles having a particle size of 0.69 ㎛ to 1.06 ㎛ of 300 to 3000 particles / mL.

15. An abrasive slurry composition according to claim 14, wherein the number of second agglomerated abrasive particles having a particle size of 1.06 ㎛ to 1.19 ㎛ is 10 to 100 pieces / mL.

16. An abrasive slurry composition in which the number of third agglomerated abrasive particles having a particle size of 1.19 ㎛ to 1.39 ㎛ is 10 to 100 pieces / mL in the 15th paragraph.

17. Step for preparing semiconductor substrate; A step of spraying a polishing slurry composition onto the semiconductor substrate; and Comprising a step of polishing the semiconductor substrate, The above polishing slurry composition water; Abrasive particles having an average particle size of 50 nm to 300 nm; dispersant; and Contains pH adjuster, A method for manufacturing a semiconductor device, wherein the number of first agglomerated abrasive particles having a particle size of 0.69 ㎛ to 1.06 ㎛ in the above polishing slurry composition is 300 to 3000 pieces / mL.

18. A method for manufacturing a semiconductor device according to claim 17, wherein the number of second agglomerated abrasive particles having a particle size of 1.06 ㎛ to 1.19 ㎛ is 10 to 100 pieces / mL.

19. A method for manufacturing a semiconductor device, wherein the number of third agglomerated abrasive particles having a particle size of 1.19 ㎛ to 1.39 ㎛ in the 18th paragraph is 10 to 100 particles / mL.

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