Additive composition for semiconductor polishing process, polishing slurry composition, and method for manufacturing semiconductor device

Abstract

An embodiment provides an additive composition for a semiconductor polishing process, having improved dispersibility and comprising: a dispersant; a reducing agent; a basic pH adjusting agent; a first dispersion stabilizer; and a second dispersion stabilizer comprising a non-ionic stabilizer or a cationic stabilizer.

Description

Additive composition for semiconductor polishing process, polishing slurry composition and method for manufacturing semiconductor device

[0001] The present invention relates to an additive composition for a semiconductor polishing process, a polishing slurry composition, and a method for manufacturing a semiconductor device.

[0002] Chemical Mechanical Polishing (CMP) is a technology that polishes a sample surface to a desired level by injecting a polishing slurry at the interface between the polishing pad and the target surface while causing friction between the pad and the target surface. Modern CMP has become an essential technology for the manufacturing of large-scale semiconductor integrated circuits, planarizing the surfaces of devices such as transistors and interlayer insulating films in multilayer wiring, planarizing various film types such as oxide and nitride films, and forming tungsten or copper wiring. As the integration of semiconductor devices increases and chip sizes decrease, the surface structure of semiconductor devices becomes more complex, and the steps between the layers become larger. Therefore, high-resolution lithography and atomic-level planarization technologies are required for the Chemical Mechanical Polishing (CMP) process applied to the semiconductor device manufacturing process. This CMP process utilizes both physical friction and chemical reactions to planarize the film. Even slight variations in the process components and / or process solutions used can produce drastically different polishing results. Consequently, the precision required for the manufacturing and design of these process components and / or process solutions is continually improving. This semiconductor polishing process is disclosed in Korean Patent No. 10-0946421, among others.

[0003] The present invention aims to provide an additive composition that improves the dispersion stability of a polishing slurry composition and appropriately controls polishing rate, selectivity, polishing profile, dishing and skew in a polishing process.

[0004] An additive composition according to one embodiment comprises a dispersant; a reducing agent; a basic pH adjusting agent; a first dispersion stabilizer; and a second dispersion stabilizer comprising a nonionic stabilizer or a cationic stabilizer.

[0005] The additive composition according to one embodiment may further include a fluorinated surfactant.

[0006] In an additive composition for a semiconductor polishing process according to one embodiment, the zeta potential change rate (ZR) expressed by the following mathematical formula 1 may be -0.1 to 0.1.

[0007] [Formula 1]

[0008] ZR = (Z1 - Z7) / Z1

[0009] Here, after the additive composition is mixed into the abrasive particle dispersion containing ceria particles to form a slurry composition, Z1 is the zeta potential of the slurry composition, and Z7 is the zeta potential of the slurry composition after being left at a temperature of 60°C for 7 days.

[0010] In an additive composition for a semiconductor polishing process according to one embodiment, the polishing particle size change rate (SR) expressed by the following mathematical formula 2 may be -0.1 to 0.1.

[0011] [Formula 2]

[0012] SR = (S1 - S7) / S1

[0013] Here, S1 is the size of the abrasive particles measured in the slurry composition, and S7 is the size of the abrasive particles measured in the slurry composition after being left at a temperature of 60°C for 7 days.

[0014] In an additive composition for a semiconductor polishing process according to one embodiment, the nonionic stabilizer may be selected from the group consisting of polyglycerin or polyvinylpyrrolidone, and the cationic stabilizer may be selected from the group consisting of polydiallylethylamine or dextrin.

[0015] In an additive composition for a semiconductor polishing process according to one embodiment, the dispersant may have a molecular weight of 10,000 to 100,000 and a pH of 1 to 6.

[0016] In an additive composition for a semiconductor polishing process according to one embodiment, the basic pH adjuster may include an amine.

[0017] In an additive composition for a semiconductor polishing process according to one embodiment, the reducing agent may include a sugar.

[0018] In an additive composition for a semiconductor polishing process according to one embodiment, the first dispersion stabilizer may include glycol.

[0019] An additive composition for a semiconductor polishing process according to one embodiment includes a dispersant; a reducing agent; and a pH regulator, and a zeta potential change rate (ZR) expressed by the following Equation 3 may be from -0.1 to 0.1.

[0020] [Formula 3]

[0021] ZR = (Z1 - Z7) / Z1

[0022] Here, after the additive composition is mixed into the abrasive particle dispersion containing ceria particles to form a slurry composition, Z1 is the zeta potential of the slurry composition, and Z7 is the zeta potential of the slurry composition after being left at a temperature of 60°C for 7 days.

[0023] In one embodiment, a polishing slurry composition comprises: an abrasive particle dispersion comprising abrasive particles; and an additive composition, wherein the additive composition comprises: a dispersant; a reducing agent; a basic pH adjusting agent; a first dispersion stabilizer; and a second dispersion stabilizer comprising a nonionic stabilizer or a cationic stabilizer.

[0024] A method for manufacturing a semiconductor device according to one embodiment includes the steps of preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate, wherein the polishing slurry composition includes a polishing particle dispersion comprising polishing particles; and an additive composition, wherein the additive composition includes a dispersant; a reducing agent; a basic pH adjusting agent; a first dispersion stabilizer; and a second dispersion stabilizer comprising a nonionic stabilizer or a cationic stabilizer.

[0025] An additive composition for a semiconductor polishing process according to an embodiment comprises water; a dispersant; a reducing agent; a pH regulator; and a stabilizer, and has a pH of 7 to 9 and a reducing power expressed by the following formula 6 of greater than 0.15.

[0026] [Formula 6]

[0027] RR = (R1 - R2) / R1

[0028] Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, R2 is the ratio of trivalent cerium among the cerium included in the polishing slurry composition, and R1 is the ratio of trivalent cerium among the cerium included in the polishing particle dispersion.

[0029] In an additive composition for a semiconductor polishing process according to one embodiment, the reducing power may exceed 0.2.

[0030] In an additive composition for a semiconductor polishing process according to one embodiment, the reducing agent may include dextrose.

[0031] In an additive composition for a semiconductor polishing process according to one embodiment, the reducing agent may be included in an amount exceeding 3 parts by weight based on 100 parts by weight of the water.

[0032] In one embodiment, the additive composition for a semiconductor polishing process may have a viscosity exceeding 1.1 cP at a temperature of 25°C.

[0033] In an additive composition for a semiconductor polishing process according to one embodiment, the dispersant may include polyacrylic acid having a molecular weight of 10,000 to 100,000 and a pH of 1 to 6, the pH adjuster may include an amine, and the stabilizer may include glycine.

[0034] In an additive composition for a semiconductor polishing process according to one embodiment, the stabilizer may include a fluorinated alcohol.

[0035] In an additive composition for a semiconductor polishing process according to one embodiment, the stabilizer may include dextrin.

[0036] In an additive composition for a semiconductor polishing process according to one embodiment, the dispersant may include glycol.

[0037] An additive composition for a semiconductor polishing process according to one embodiment may have an absolute viscosity of about 1.1 cP to about 3.0 cP at a temperature of 25°C.

[0038] A polishing slurry composition according to an embodiment comprises: an abrasive particle dispersion comprising ceria particles; and an additive composition, wherein the additive composition comprises water; a dispersant; a reducing agent; a pH regulator; and a stabilizer, wherein the pH of the additive composition is 7 to 9 and the reducing power expressed by the following equation 6 exceeds 0.15.

[0039] [Formula 6]

[0040] RR = (R1 - R2) / R1

[0041] Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, R2 is the ratio of trivalent cerium among the cerium included in the polishing slurry composition, and R1 is the ratio of trivalent cerium among the cerium included in the polishing particle dispersion.

[0042] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate, wherein the polishing slurry composition comprises an abrasive particle dispersion comprising ceria particles; and an additive composition, wherein the additive composition comprises water; a dispersant; a reducing agent; a pH regulator; and a stabilizer, wherein the pH of the additive composition is 7 to 9, and the reducing power expressed by the following equation 6 exceeds 0.15.

[0043] [Formula 6]

[0044] RR = (R1 - R2) / R1

[0045] Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, R2 is the ratio of trivalent cerium among the cerium included in the polishing slurry composition, and R1 is the ratio of trivalent cerium among the cerium included in the polishing particle dispersion.

[0046] An additive composition according to one embodiment comprises a dispersant; a reducing agent; a dispersion stabilizer; a basic pH adjuster; and an acidic pH adjuster, wherein the sum of the pKa of the basic pH adjuster and the pKa of the acidic pH adjuster is from 4 to 11 at 25°C.

[0047] In an additive composition for a semiconductor polishing process according to one embodiment, a fluorinated surfactant may be further included.

[0048] In an additive composition for a semiconductor polishing process according to one embodiment, the pKa of the basic pH regulator may be 5 to 12 at 25°C, and the pKa of the acidic pH regulator may be -2 to 2 at 25°C.

[0049] In an additive composition for a semiconductor polishing process according to one embodiment, the dispersant may include polyacrylic acid having a molecular weight of 10,000 to 100,000 and a pKa of 1 to 6 at 25°C, and the stabilizer may include glycine.

[0050] In an additive composition for a semiconductor polishing process according to one embodiment, the basic pH adjuster may include an alcohol amine, and the acidic pH adjuster may include an inorganic acid.

[0051] In an additive composition for a semiconductor polishing process according to one embodiment, the dispersant has a molecular weight of 10,000 to 100,000, and the pKa of the dispersant may be 3 to 6 at 25°C.

[0052] The pH of the additive composition for a semiconductor polishing process according to one embodiment may be 7 to 9.

[0053] In an additive composition for a semiconductor polishing process according to one embodiment, the reducing agent may include a sugar.

[0054] In an additive composition for a semiconductor polishing process according to one embodiment, the sugar may include dextrose.

[0055] A polishing slurry composition according to an embodiment comprises: an abrasive particle dispersion comprising abrasive particles; and an additive composition, wherein the additive composition comprises a dispersant; a reducing agent; a dispersion stabilizer; a basic pH adjuster; and an acidic pH adjuster, wherein the sum of the pKa of the basic pH adjuster and the pKa of the acidic pH adjuster is 4 to 11 at 25°C.

[0056] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate, wherein the polishing slurry composition comprises an abrasive particle dispersion comprising abrasive particles; and an additive composition, wherein the additive composition comprises a dispersant; a reducing agent; a dispersion stabilizer; a basic pH adjuster; and an acidic pH adjuster, wherein the sum of the pKa of the basic pH adjuster and the pKa of the acidic pH adjuster is 4 to 11 at 25°C.

[0057] The additive composition according to the embodiment may include a first dispersion stabilizer and a second dispersion stabilizer. In particular, the second dispersion stabilizer may include a nonionic stabilizer or a cationic stabilizer.

[0058] Accordingly, the additive composition according to the embodiment can improve the dispersibility of abrasive particles such as ceria particles. In particular, the first dispersion stabilizer and the second dispersion stabilizer can effectively complement the dispersant, thereby improving the dispersibility of the abrasive particles.

[0059] In addition, the additive composition according to the embodiment can be mixed into an abrasive particle dispersion containing the abrasive particles to form a polishing slurry composition. The polishing slurry composition can have a low zeta potential change and a low particle size change even when left at a high temperature for a long period of time. Accordingly, the additive composition according to the embodiment can have improved stability with respect to changes over time in the polishing slurry composition.

[0060] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can suppress agglomeration of the abrasive particles. Accordingly, the additive composition according to the embodiment can prevent defects in the manufacturing process of a semiconductor device.

[0061] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can uniformly polish the semiconductor substrate. Accordingly, the additive composition and the polishing slurry composition according to the embodiment can suppress dishing and skew.

[0062] In addition, the additive composition according to the embodiment includes water; a dispersant; a reducing agent; a pH regulator; and a stabilizer, and may have an appropriate pH and an improved reducing power.

[0063] Accordingly, the additive composition according to the embodiment can effectively improve the ratio of trivalent cerium contained in ceria particles.

[0064] In particular, the additive composition according to the embodiment may include a high content of the reducing agent, such as sugar, etc. Accordingly, the additive composition according to the embodiment may improve the viscosity of the polishing slurry composition while also improving the reducing power.

[0065] Accordingly, the polishing slurry composition including the additive composition according to the embodiment can improve the remaining time on the polishing pad and wafer, and improve the polishing rate and profile characteristics.

[0066] In addition, since the viscosity of the polishing slurry composition increases, the load applied to the semiconductor substrate on the polishing pad can increase. That is, even if the load applied to the semiconductor substrate increases, the polishing slurry composition can effectively remain between the semiconductor substrate and the polishing pad. Accordingly, the polishing rate of the semiconductor substrate can be improved.

[0067] Additionally, the additive composition according to the embodiment may include a dispersant, a dispersion stabilizer, and a fluorinated surfactant in appropriate amounts. Accordingly, the additive composition according to the embodiment may improve the dispersibility of the abrasive particles.

[0068] Additionally, the additive composition according to the embodiment can adjust the pH by combining a basic pH adjuster and an acidic pH adjuster having an appropriate pKa. Additionally, the additive composition according to the embodiment can include a dispersant having a predetermined pKa.

[0069] At this time, the additive composition according to the embodiment can maximize the dispersing effect of the dispersing agent by appropriately combining the basic pH regulator and the acidic pH regulator to appropriately control the pH.

[0070] Additionally, the additive composition according to the embodiment may include polyacrylic acid having an appropriate pKa as a dispersant. Additionally, the additive composition according to the embodiment may include a fluorinated surfactant. Additionally, the additive composition according to the embodiment may further include glycine and a saccharide.

[0071] Accordingly, the additive composition according to the embodiment can improve the dispersibility of abrasive particles such as ceria particles. In particular, the acidic pH adjuster and the basic pH adjuster can effectively complement the dispersant, thereby improving the dispersibility of the abrasive particles.

[0072] In addition, the additive composition according to the embodiment can be mixed into an abrasive particle dispersion containing the abrasive particles to form a polishing slurry composition. The polishing slurry composition can have a low zeta potential change and a low particle size change even when left at a high temperature for a long period of time. Accordingly, the additive composition according to the embodiment can have improved stability with respect to changes over time in the polishing slurry composition.

[0073] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can suppress agglomeration of the abrasive particles. Accordingly, the additive composition according to the embodiment can prevent defects in the manufacturing process of a semiconductor device.

[0074] In addition, since the additive composition according to the embodiment includes the basic pH adjuster and the acidic pH adjuster, the polishing rate and selectivity of the polishing slurry composition can be improved.

[0075] Figure 1 schematically illustrates a device configuration for a method for manufacturing the semiconductor device according to one embodiment.

[0076] FIG. 2 is a cross-sectional view illustrating a process in which dishing occurs in a polishing process according to one embodiment.

[0077] FIG. 3 is a cross-sectional view illustrating a process in which skew occurs in a polishing process according to one embodiment.

[0078] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments or examples described below. However, the present invention is not limited to the embodiments or examples disclosed below and may be implemented in various different forms. The embodiments or examples specified below are provided solely to ensure that the disclosure of the present invention is complete and to inform those skilled in the art of the scope of the invention. The scope of the rights of the present invention is defined by the scope of the claims.

[0079] In the drawings, the thickness of some components is enlarged to clearly represent layers or regions, as needed. Additionally, in the drawings, the thickness of some layers and regions is exaggerated for convenience of explanation. Throughout the specification, the same reference numerals designate the same components.

[0080] In addition, when a part such as a layer, film, region, or plate is said to be "on," "on," or "above" another part in this specification, this is interpreted to include not only the case where it is "directly above" another part, but also the case where there is another part in between. When a part is said to be "directly above" another part, this is interpreted to mean that there is no other part in between. In addition, when a part such as a layer, film, region, or plate is said to be "below," "under," or "below" another part, this is interpreted to include not only the case where it is "directly below" another part, but also the case where there is another part in between. When a part is said to be "directly below" another part, this is interpreted to mean that there is no other part in between.

[0081] Hereinafter, implementation examples according to the present invention will be described in detail.

[0082] The additive composition according to the embodiment comprises water, a dispersant, a dispersion stabilizer, a reducing agent, a surfactant, and a pH regulator. In addition, the additive composition according to the embodiment may further comprise a protective agent.

[0083] The above water may include deionized water.

[0084] The dispersant may include a polymer. The dispersant may include a polymer resin. The dispersant may be selected from the group consisting of polyacrylic acid, polyphosphoric acid, polymaleic acid, and polymethacrylic acid. The dispersant may include polyacrylic acid.

[0085] The above polyacrylic acid may include a repeating unit represented by the following chemical formula 1.

[0086] [Chemical Formula 1]

[0087]

[0088] Here, n can be 10 to 1000.

[0089] The weight average molecular weight of the dispersant may be from about 1000 g / mol to about 40,000 g / mol, from about 2000 g / mol to about 40,000 g / mol, from about 3000 g / mol to about 30,000 g / mol, from about 3000 g / mol to about 10,000 g / mol, from about 3000 g / mol to about 7,000 g / mol, from about 10,000 g / mol to about 50,000 g / mol, from about 20,000 g / mol to about 30,000 g / mol, or from about 25,000 g / mol to about 35,000 g / mol.

[0090] The pKa of the dispersant may be from about 3 to about 7, from about 2 to about 6, from about 3 to about 6, from about 3 to about 5, from about 3.5 to about 5.5, or from about 3.7 to about 5.3 at a temperature of about 25°C.

[0091] The above dispersant may have a carboxyl group.

[0092] The dispersant may be included in the additive composition according to the embodiment in an amount of about 0.03 parts by weight to about 1 part by weight, about 0.04 parts by weight to about 1.1 parts by weight, about 0.05 parts by weight to about 0.8 parts by weight, or about 0.05 parts by weight to about 0.5 parts by weight, based on 100 parts by weight of the water.

[0093] The above dispersant can surround the abrasive particles. The above dispersant can improve the dispersibility of the abrasive particles.

[0094] The above dispersion stabilizer may include a first dispersion stabilizer and a second dispersion stabilizer.

[0095] The first dispersion stabilizer may include at least one glycol selected from the group consisting of ethylene glycol, diethylene glycol, and polyethylene glycol.

[0096] The molecular weight of the first dispersion stabilizer may be from about 40 g / mol to about 1000 g / mol, from about 50 g / mol to about 900 g / mol, from about 50 g / mol to about 700 g / mol, from about 50 g / mol to about 500 g / mol, from about 50 g / mol to about 300 g / mol, or from about 50 g / mol to about 200 g / mol.

[0097] The above first dispersion stabilizer can be represented by the following chemical formula 2.

[0098] [Chemical Formula 2]

[0099]

[0100] In the above chemical formula 2, n may be 1 to 10.

[0101] The pKa of the first dispersion stabilizer may be from about 5 to about 30, from about 7 to about 25, from about 8 to 20, or from about 9 to about 20.

[0102] The pKa of the first dispersion stabilizer may be greater than the pKa of the dispersant. The pKa of the first dispersion stabilizer may be greater than the pKa of the dispersant by about 1 to about 20, by about 2 to about 15, by about 3 to about 15, or by about 4 to about 13.

[0103] The first dispersion stabilizer may be included in the additive composition according to the embodiment in an amount of about 0.1 to 5 parts by weight, about 0.1 to 3 parts by weight, about 0.2 to 2 parts by weight, about 0.3 to 1 part by weight, or about 0.2 to 0.8 parts by weight, based on 100 parts by weight of the water.

[0104] The weight ratio of the dispersant and the first dispersion stabilizer may be from about 1:3 to about 1:10. The weight ratio of the dispersant and the first dispersion stabilizer may be from about 1:4 to about 1:8.

[0105] The second dispersion stabilizer may have a higher molecular weight than the first dispersion stabilizer. The weight average molecular weight of the second dispersion stabilizer may be greater than the molecular weight of the first dispersion stabilizer by about 100 g / mol to about 50,000 g / mol, by about 500 g / mol to about 40,000 g / mol, by about 1,000 g / mol to about 30,000 g / mol, by about 2,000 g / mol to about 20,000 g / mol, or by about 2,000 g / mol to about 10,000 g / mol.

[0106] The weight average molecular weight of the second dispersion stabilizer may be from about 2000 g / mol to about 70000 g / mol, from about 3000 g / mol to about 60000 g / mol, from about 3500 g / mol to about 50000 g / mol, or from about 2000 g / mol to about 50000 g / mol.

[0107] The second dispersion stabilizer may include a nonionic stabilizer and / or a cationic stabilizer.

[0108] The above nonionic stabilizer may be selected from at least one group consisting of polyglycerine or polyvinylpyrrolidone.

[0109] The above polyglycerin can be represented by the following chemical formula 3.

[0110] [Chemical Formula 3]

[0111]

[0112] In the above chemical formula 3, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0113] The weight average molecular weight of the polyglycerin may be from about 100 g / mol to about 3000 g / mol, from about 150 g / mol to about 2000 g / mol, from about 200 g / mol to about 1500 g / mol, or from about 100 g / mol to about 1000 g / mol.

[0114] The weight average molecular weight of the polyvinylpyrrolidone may be from about 3000 g / mol to about 30000 g / mol, from about 4000 g / mol to about 25000 g / mol, from about 5000 g / mol to about 15000 g / mol, or from about 6000 g / mol to about 14000 g / mol.

[0115] The pKa of the nonionic stabilizer may be from about 5 to about 30, from about 7 to about 25, from about 8 to 20, or from about 9 to about 20.

[0116] The pKa of the nonionic stabilizer may be greater than the pKa of the dispersant. The pKa of the nonionic stabilizer may be greater than the pKa of the dispersant by about 1 to about 20, by about 2 to about 15, by about 3 to about 15, or by about 4 to about 13.

[0117] The cationic stabilizing agent may be at least one selected from the group consisting of polydiallyldimethylammonium chloride, polymethacrylate or polyoxyethylenestearylamine ether.

[0118] The above polydiallyldimethylammonium chloride can be represented by the following chemical formula 4.

[0119] [Chemical Formula 4]

[0120]

[0121] In the above chemical formula 4, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0122] The weight average molecular weight of the above polydiallyldimethylammonium chloride may be about 3000 g / mol to about 30000 g / mol, about 4000 g / mol to about 25000 g / mol, about 5000 g / mol to about 15000 g / mol, or about 6000 g / mol to about 14000 g / mol.

[0123] The above polymethacrylate can be represented by the following chemical formula 5.

[0124] [Chemical Formula 5]

[0125]

[0126] In the above chemical formula 5, n may be about 1 to about 3000, about 10 to about 2000, about 100 to about 1000, or about 150 to about 1500.

[0127] The weight average molecular weight of the above polymethacrylate may be from about 4000 g / mol to about 40000 g / mol, from about 5000 g / mol to about 30000 g / mol, from about 8000 g / mol to about 25000 g / mol, or from about 9000 g / mol to about 20000 g / mol.

[0128] The above polyoxyethylene stearylamine ether can be represented by the following chemical formula 6.

[0129] [Chemical Formula 6]

[0130]

[0131] The pKa of the cationic stabilizer may be from about 3 to about 20, from about 4 to about 15, from about 5 to 12, or from about 6 to about 10.

[0132] At a temperature of about 25°C, the ratio of the pKa of the cationic stabilizer and the pKa of the dispersant may be about 1:0.5 to about 1:2, about 1:0.7 to 1:1.7, or 1:0.8 to 1:1.5.

[0133] The second dispersion stabilizer may be included in the additive composition according to the embodiment in an amount of about 0.1 to 5 parts by weight, about 0.1 to 3 parts by weight, about 0.2 to 2 parts by weight, about 0.3 to 1 part by weight, or about 0.2 to 0.8 parts by weight, based on 100 parts by weight of the water.

[0134] The weight ratio of the dispersant and the second dispersion stabilizer may be from about 1:3 to about 1:10. The weight ratio of the dispersant and the second dispersion stabilizer may be from about 1:4 to about 1:8.

[0135] Additionally, the weight ratio of the first dispersion stabilizer and the second dispersion stabilizer may be about 1:0.5 to about 1:2, about 1:0.7 to about 1:1.5, or about 1:0.8 to about 1:1.3.

[0136] The reducing agent may include a sugar. The sugar may be at least one selected from the group consisting of dextrose, galactose, arabinose, ribose, xylose, maltitol, lactose, maltose, pullulan, or xylitol.

[0137] In addition, the above sugars are sucrose, lactulose, lactose, trehalose, maltose, cellobiose, kojibiose, nigerose, isomaltose, isotrehalose, neotrehalose, sophorose, laminaribiose, gentibiose, turanose, maltulose, paratinose, gentiobiurose, mannobiose, melibiose, melibiurose, neolactose, galactosucrose, sylabiose, rutinose, rutinurose, bicyanose, gyrobiose, primerose, trehalosamine, maltitol, cellobionic acid, lactosamine, lactosediamine, lactobionic acid, lactitol, hyalobiuronic acid, sucralose, nigerotriose, maltotriose, melecitose, Maltotriulose, raffinose, kestose, nystose, nigerotetraose, stachyose, amylose, dextran, dextrin, maltodextrin, cluster dextrin, cycloawaodorin, laminaran, callose, PGA, pectin, glucomannan, gellan gum, curdlan, psyllium, locust bean gum, pullulan, alginic acid, tamarind, carrageenan, CMC, xanthan gum, gum arabic, guar gum, pectin, soybean polysaccharide, fructan, glycogen, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, isomaltooligosaccharide, galactooligosaccharide, xylooligosaccharide, soybean oligosaccharide, nigerooligosaccharide, At least one may be selected from the group consisting of oligosaccharides or fructooligosaccharides.

[0138] Additionally, the sugar may be at least one selected from the group consisting of amylose, dextran, dextrin, maltodextrin, cluster dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, maltose, isomaltose, maltotriose, or stachyose.

[0139] The above sugars may include at least one from the group consisting of dextrose, fructose or galactose.

[0140] The reducing agent may be included in the additive composition according to the embodiment in an amount of about 1 part by weight to 10 parts by weight, about 0.5 parts by weight to about 7 parts by weight, about 1.5 parts by weight to about 8 parts by weight, about 2 parts by weight to about 10 parts by weight, or about 2 parts by weight to about 8 parts by weight, based on 100 parts by weight of the water.

[0141] The weight ratio of the dispersant and the reducing agent may be from about 1:50 to about 1:500. The weight ratio of the dispersant and the reducing agent may be from about 1:60 to about 1:300.

[0142] The above fluorinated surfactant may include a nonionic fluorinated polymer compound. The above fluorosurfactant may be at least one selected from the group consisting of sodium sulfonate fluorosurfactant, phosphate ester fluorosurfactant, amine oxide fluorosurfactant, betaine fluorosurfactant, ammonium carboxylate fluorosurfactant, stearate ester fluorosurfactant, quaternary ammonium fluorosurfactant, ethylene oxide / propylene oxide fluorosurfactant, and polyoxyethylene fluorosurfactant.

[0143] The above fluorinated surfactant can be represented by the following chemical formula 7.

[0144] [Chemical Formula 7]

[0145]

[0146] In the above chemical formula 7, n may be 1 to 10, and m may be 1 to 10. In the above chemical formula 7, n may be 2 to 7, and m may be 2 to 7. In the above chemical formula 7, n may be 1 to 5, and m may be 1 to 5.

[0147] The fluorinated surfactant may be included in the additive composition according to the embodiment in an amount of about 0.001 to about 0.05 parts by weight, about 0.0001 to about 0.03 parts by weight, about 0.003 to about 0.01 parts by weight, or about 0.004 to about 0.01 parts by weight, based on 100 parts by weight of the water.

[0148] The above-mentioned protective agent can protect a semiconductor substrate to be polished. The protective agent can protect the surface of the semiconductor substrate. The protective agent can protect a non-target film on the semiconductor substrate. For example, the protective agent can protect a silicon nitride film included in the semiconductor substrate.

[0149] The protective agent may include an amphoteric substance. The protective agent may include an acidic group and a basic group. The protective agent may include an amine group and a carboxyl group. The protective agent may include glycine, taurine, proline, glutamic acid, serene, valine, or theanine.

[0150] The above protective agent may be included in the additive composition according to the embodiment in an amount of about 0.3 parts by weight to about 5 parts by weight, about 0.5 parts by weight to about 4 parts by weight, about 0.5 parts by weight to about 3 parts by weight, about 0.5 parts by weight to about 2 parts by weight, or about 0.7 parts by weight to about 1.5 parts by weight, based on 100 parts by weight of the water.

[0151] The pH regulator may include a first pH regulator and a second pH regulator.

[0152] The first pH adjusting agent may comprise a basic compound. The first pH adjusting agent may comprise a basic pH adjusting agent.

[0153] The first pH adjusting agent may be imidazole, alkyl amines, alcohol amines, quaternary amine hydroxides, ammonia, or a combination thereof. In particular, the first pH adjusting agent may be at least one selected from the group consisting of triethanolamine, tetramethylammonium hydroxide (TMAH or TMAOH), or tetraethylammonium hydroxide (TEAH or TEA-OH). In addition, examples of the pH adjusting agent may include at least one selected from the group consisting of ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium bicarbonate, sodium carbonate, triethanolamine, tromethamine, and niacinamide. The first pH adjusting agent may be triethanolamine or aminobutyric acid. The first pH adjusting agent may include triethanolamine.

[0154] The first pH regulator may be included in the additive composition according to the embodiment in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0155] The first pH regulator can be mixed with the dispersant to form a neutralized salt. That is, the first pH regulator and the dispersant can react to form the salt. The pH of the salt formed by the reaction of the first pH regulator and the dispersant can be about 8 to about 10. That is, the first pH regulator and the dispersant can react with each other in appropriate amounts to form a salt having a pH of about 8 to about 10.

[0156] The second pH adjusting agent may comprise an acidic compound. The second pH adjusting agent may comprise an acidic pH adjusting agent.

[0157] The second pH regulator may be selected from at least one group consisting of an inorganic acid selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, and phosphoric acid, or an organic acid selected from the group consisting of acetic acid, citric acid, glutaric acid, gluconic acid, formic acid, lactic acid, malic acid, malonic acid, maleic acid, oxalic acid, phthalic acid, succinic acid, and tartaric acid. The second pH regulator may include nitric acid.

[0158] The second pH regulator may be appropriately added to adjust the pH of the additive composition according to the embodiment. The second pH regulator may be added to the additive composition according to the embodiment in an appropriate amount so that the pH of the additive composition according to the embodiment becomes about 7 to about 10.

[0159] The second pH adjusting agent may have a pKa of about -2 to about 1, a pKa of about -2 to about 5, a pKa of about -2 to about 3, a pKa of about -2 to about 0, a pKa of about -2 to about -1, a pKa of about 0 to about 4, or a pKa of about 2 to about 5 at a temperature of about 25°C.

[0160] The sum of the pKa of the first pH regulator and the pKa of the second pH regulator may be from about 4 to about 12, from about 3 to about 12, from about 3 to about 11, from about 5 to about 11, from about 5 to about 12, or from about 6 to about 11 at a temperature of about 25°C.

[0161] Since the first pH regulator and the second pH regulator have pKa in the above range, they can improve the performance of the dispersant, the dispersion stabilizer, the fluorine-based surfactant, the protective agent, and the reducing agent.

[0162] In particular, since the second pH regulator comprises an inorganic acid with a low pKa, the content of organic anions can be reduced to control the pH. That is, since the second pH regulator comprises an inorganic acid, the pH can be effectively controlled with a small content of inorganic anions.

[0163] Accordingly, the additive composition according to the embodiment can reduce the adsorption of organic anions in a polishing process. Accordingly, the additive composition according to the embodiment can implement a polishing slurry composition having an improved polishing rate.

[0164] The additive composition according to the embodiment can be used in a process for manufacturing a semiconductor device. The additive composition according to the embodiment can be used in a chemical mechanical polishing process. The additive composition according to the embodiment can be uniformly mixed with an abrasive particle dispersion to form a polishing slurry composition. The polishing slurry composition can be used in the chemical mechanical polishing process.

[0165] The additive composition according to the embodiment may have electrical conductivity.

[0166] In the additive composition according to the embodiment, the electrical conductivity may be from about 1000 μs / cm to about 6000 μs / cm, from about 1500 μs / cm to about 5500 μs / cm, from about 2000 μs / cm to about 5000 μs / cm, from about 2500 μs / cm to about 4500 μs / cm, or from about 3000 μs / cm to about 4000 μs / cm.

[0167] Since the additive composition according to the embodiment has an electrical conductivity within the above range, it can be mixed with the abrasive particle dispersion to improve the performance of the abrasive slurry composition.

[0168] The additive composition according to the embodiment may have an absolute viscosity based on a temperature of about 25°C.

[0169] In the additive composition according to the embodiment, the absolute viscosity may be from about 1.0 cP to about 2.0 cP, from about 1.0 cP to about 2.5 cP, from about 1.0 cP to about 1.8 cP, from about 1.0 cP to about 1.7 cP, or from about 1.0 cP to about 1.2 cP.

[0170] Since the additive composition according to the embodiment has an absolute viscosity within the above range, it can be mixed with the abrasive particle dispersion to improve the performance of the abrasive slurry composition.

[0171] The abrasive particle dispersion may include water, abrasive particles, the dispersant, the dispersing aid, the dispersion stabilizer, the fluorinated surfactant, and the pH regulator. The abrasive particle dispersion may further include the protective agent.

[0172] The average particle diameter (D50) of the abrasive particles may be from about 10 nm to about 300 nm. The average particle diameter (D50) of the abrasive particles may be from about 20 nm to about 200 nm. The average particle diameter (D50) of the abrasive particles may be from about 30 nm to about 150 nm.

[0173] The particle size of the above abrasive particles can be measured by a Zetasizer from Malvern.

[0174] Since the average particle diameter of the above-mentioned abrasive particles is as above, the abrasive slurry composition according to the embodiment can have an improved polishing rate while reducing defects and dishing.

[0175] The abrasive particles may include ceria. The abrasive particles may be ceria particles.

[0176] The abrasive particles may be included in the abrasive particle dispersion in an amount of about 1 wt% to about 15 wt%, about 2 wt% to about 10 wt%, or about 3 wt% to about 8 wt%, based on the total weight of the abrasive particle dispersion.

[0177] Since the abrasive particles are included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0178] The above abrasive particle dispersion may contain the dispersant in an amount of 0.1 wt% to about 1 wt%, in an amount of about 0.2 wt% to about 0.8 wt%, or in an amount of about 0.3 wt% to about 0.7 wt%, based on the total weight.

[0179] Since the above dispersant is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0180] The above dispersing aid may include an organic acid.

[0181] The above dispersing aid may include a pyridine derivative.

[0182] The above dispersing aid may be selected from the group consisting of 2-Picolinic acid, 2-Pyridinecarboxylic acid, 2,6-dicarboxylic acid, 4-Pyridinecarboxylic acid, 6-methyl-2-pyridinecarboxylic acid, and nicotinic acid.

[0183] The pKa of the dispersing aid may be from about 0.5 to about 4, from about 0.6 to about 3, from about 0.6 to about 2.5, from about 0.6 to about 2.0, from about 0.7 to about 1.5, or from about 0.8 to about 1.4 at a temperature of about 25°C.

[0184] The pKa of the dispersing aid may be lower than the pKa of the dispersing agent. The pKa of the dispersing aid may be lower than the pKa of the dispersing agent by about 0.1 to about 5, by about 0.2 to about 4, by about 0.3 to about 3, by about 0.4 to about 2, or by about 0.5 to about 1.5.

[0185] Since the above-mentioned dispersing agent has a pKa within the above-mentioned range, the dispersing agent, together with the dispersing agent, can improve the dispersibility of the abrasive particles. Since the above-mentioned dispersing agent has a pKa within the above-mentioned range, the dispersing agent can surround the abrasive particles, and the dispersing agent can surround the abrasive particles while surrounding the dispersing agent. Accordingly, the abrasive particles can have improved dispersibility.

[0186] The molecular weight of the dispersing aid may be from about 50 g / mol to about 1000 g / mol, from about 60 g / mol to about 800 g / mol, from about 70 g / mol to about 700 g / mol, from about 80 g / mol to about 500 g / mol, or from about 50 g / mol to about 400 g / mol.

[0187] The ratio of the molecular weight of the dispersing aid and the molecular weight of the dispersant may be about 1:5 to about 1:2000, about 1:10 to about 1:1000, about 1:20 to about 1:1000, about 1:30 to about 1:1000, about 1:40 to about 1:1000, or about 1:50 to about 1:1000.

[0188] Since the above-mentioned dispersing agent has a molecular weight within the above-mentioned range, the dispersing agent, together with the dispersing agent, can improve the dispersibility of the abrasive particles. Since the above-mentioned dispersing agent has a molecular weight within the above-mentioned range, the dispersing agent can surround the abrasive particles, and the dispersing agent can surround the abrasive particles while also surrounding the dispersing agent. Accordingly, the abrasive particles can have improved dispersibility.

[0189] The dispersing aid may be included in the abrasive particle dispersion in an amount of about 0.05 wt% to about 5 wt%, about 0.07 wt% to about 2.5 wt%, about 0.1 wt% to about 1 wt%, or about 0.1 wt% to about 0.5 wt%, based on the total weight of the abrasive particle dispersion.

[0190] Since the above dispersing aid is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0191] The abrasive particle dispersion may contain the first dispersion stabilizer in an amount of 1 wt% to about 15 wt%, in an amount of about 2 wt% to about 15 wt%, or in an amount of about 3 wt% to about 13 wt%, based on the total weight.

[0192] The above abrasive particle dispersion may contain the second dispersion stabilizer in an amount of 1 wt% to about 15 wt%, in an amount of about 2 wt% to about 15 wt%, or in an amount of about 3 wt% to about 13 wt%, based on the total weight.

[0193] Since the first dispersion stabilizer and the second dispersion stabilizer are included in the abrasive particle dispersion in the above ranges, the polishing slurry composition can have an improved polishing rate and reduced defect generation.

[0194] The fluorinated surfactant may be included in the abrasive particle dispersion in an amount of about 0.001 to about 0.05 parts by weight, about 0.0001 to about 0.03 parts by weight, about 0.003 to about 0.01 parts by weight, or about 0.004 to about 0.01 parts by weight, based on 100 parts by weight of the water.

[0195] Since the fluorine-based surfactant is included in the abrasive particle dispersion in the above range, the abrasive slurry composition can have an improved polishing rate and reduced defect generation.

[0196] The protective agent may be included in the abrasive particle dispersion in an amount of about 0.3 parts by weight to about 5 parts by weight, about 0.5 parts by weight to about 4 parts by weight, about 0.5 parts by weight to about 3 parts by weight, about 0.5 parts by weight to about 2 parts by weight, or about 0.7 parts by weight to about 1.5 parts by weight, based on 100 parts by weight of the water.

[0197] The first pH adjuster may be included in the abrasive particle dispersion in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0198] The second pH adjusting agent may be included in the abrasive particle dispersion in an amount of about 0.5 parts by weight to about 5 parts by weight, about 0.3 parts by weight to about 4 parts by weight, about 0.7 parts by weight to about 4 parts by weight, or about 0.8 parts by weight to about 3 parts by weight, based on 100 parts by weight of the water.

[0199] The pH of the abrasive particle dispersion can be controlled by the first pH adjuster and the second pH adjuster. The pH of the abrasive particle dispersion can be from about 6 to about 11, from about 7 to about 10, or from about 7.5 to about 9.5.

[0200] Since the pH of the above-mentioned abrasive particle dispersion is in the above-mentioned range, the above-mentioned abrasive slurry composition can have an improved polishing rate and reduced defect induction.

[0201] The zeta potential of the abrasive particle dispersion may be from about -55 mV to about -5 mV, from about -50 mV to about -10 mV, from about -45 mV to about -15 mV, from about -45 mV to about -20 mV, or from about -40 mV to about -25 mV.

[0202] Since the zeta potential of the above-mentioned abrasive particle dispersion is in the above-mentioned range, the above-mentioned abrasive slurry composition can have an improved polishing rate and reduced defect induction.

[0203] The above additive composition, deionized water, and the above polishing particle dispersion can be mixed to prepare the above polishing slurry composition.

[0204] In the above polishing slurry composition, the additive composition according to the embodiment and the polishing particle dispersion may be mixed in a weight ratio of about 3:1 to about 1:3, a weight ratio of about 2.5:1 to about 1:2.5, a weight ratio of about 2:1 to about 1:2, or a weight ratio of about 1.5:1 to about 1:1.5.

[0205] The above polishing slurry composition can have an improved polishing rate and reduced defect generation because it includes the above additive composition and the above polishing particle dispersion in the above contents.

[0206] Alternatively, the polishing slurry composition may be formed by mixing deionized water and the polishing particle dispersion. That is, the polishing slurry composition may be formed by adding only deionized water to the polishing particle dispersion without adding the additive composition.

[0207] Additionally, in the polishing slurry composition, the deionized water and the polishing particle dispersion may be mixed in a weight ratio of about 3:1 to about 20:1, a weight ratio of about 5:1 to about 15:1, a weight ratio of about 7:1 to about 15:1, or a weight ratio of about 5:1 to about 15:1.

[0208] The above polishing slurry composition can have an improved polishing rate and reduced defect generation because it includes the additive composition according to the embodiment and the polishing particle dispersion in the above content.

[0209] The above polishing slurry composition may include the abrasive particles in an amount of about 0.05 wt% to about 1 wt%, in an amount of about 0.1 wt% to about 1 wt%, or in an amount of about 0.15 wt% to about 0.8 wt%, based on the total weight.

[0210] The polishing slurry composition may include the dispersant in an amount of about 0.01 wt% to about 0.1 wt%, about 0.02 wt% to about 0.08 wt%, or about 0.03 wt% to about 0.08 wt%, based on the total weight.

[0211] The polishing slurry composition may include the dispersing aid in an amount of about 0.005 wt% to about 0.5 wt%, about 0.007 wt% to about 0.25 wt%, about 0.01 wt% to about 0.1 wt%, or about 0.01 wt% to about 0.05 wt%, based on the total weight.

[0212] The polishing slurry composition may contain the first dispersion stabilizer in an amount of from about 0.1 wt% to about 1.5 wt%, from about 0.2 wt% to about 1.5 wt%, or from about 0.3 wt% to about 1.3 wt%, based on the total weight.

[0213] The polishing slurry composition may include the second dispersion stabilizer in an amount of from about 0.1 wt% to about 1.5 wt%, from about 0.2 wt% to about 1.5 wt%, or from about 0.3 wt% to about 1.3 wt%, based on the total weight.

[0214] The fluorinated surfactant may be included in the polishing slurry composition in an amount of about 0.0001 to about 0.005 parts by weight, about 0.00001 to about 0.003 parts by weight, about 0.0003 to about 0.001 parts by weight, or about 0.0004 to about 0.001 parts by weight, based on 100 parts by weight of the water.

[0215] The above polishing slurry composition has an improved polishing rate and can reduce the occurrence of defects because it contains the polishing particles, the dispersant, the dispersing aid, the dispersion stabilizer, the fluorine-based surfactant, and the reducing agent in the above range of potentials.

[0216] The first pH adjuster may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to about 0.5 parts by weight, about 0.03 parts by weight to about 0.4 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, or about 0.08 parts by weight to about 0.3 parts by weight, based on 100 parts by weight of the water.

[0217] The second pH adjuster may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to about 0.5 parts by weight, about 0.03 parts by weight to about 0.4 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, or about 0.08 parts by weight to about 0.3 parts by weight, based on 100 parts by weight of the water.

[0218] The pH of the polishing slurry composition can be adjusted by the first pH adjuster and the second pH adjuster. The pH of the polishing slurry composition can be about 6 to about 11, about 7 to about 10, or about 7.5 to about 9.5.

[0219] Since the pH of the above polishing slurry composition is within the above range, it can have an improved polishing rate and reduced defect generation.

[0220] The reducing agent may be included in the polishing slurry composition in an amount of about 0.05 parts by weight to 0.5 parts by weight, about 0.025 parts by weight to about 0.35 parts by weight, about 0.07 parts by weight to about 0.4 parts by weight, about 0.1 parts by weight to about 0.5 parts by weight, or about 0.1 parts by weight to about 0.4 parts by weight, based on 100 parts by weight of the water.

[0221] The zeta potential of the polishing slurry composition may be from about -55 mV to about -5 mV, from about -50 mV to about -10 mV, from about -45 mV to about -15 mV, from about -45 mV to about -20 mV, or from about -40 mV to about -25 mV.

[0222] Since the zeta potential of the above polishing slurry composition has the above range, the above polishing slurry composition can have an improved polishing rate and reduce the occurrence of defects.

[0223] The additive composition according to the embodiment may have a first zeta potential change rate (ZR1).

[0224] The above first zeta potential change rate can be expressed by the following equation 1.

[0225] [Formula 1]

[0226] ZR1 = (Z2-Z1) / Z1

[0227] Here, Z1 is the zeta potential of the abrasive particle dispersion, and Z2 is the zeta potential of the abrasive slurry composition.

[0228] The first zeta potential change rate may be from about -0.15 to about 1.5, from about -0.1 to about 0.1, from about -0.08 to about 0.08, from about -0.07 to about 0.07, from about -0.06 to about 0.06, from about -0.05 to about 0.05, or from about -0.04 to about 0.04.

[0229] Since the first zeta potential change rate has the above range, the polishing slurry composition can have stable performance. Accordingly, the additive composition according to the embodiment can impart an improved polishing rate and low defect generation to the polishing slurry composition.

[0230] In order to derive the above first zeta potential change rate, the abrasive particle dispersion may include water, about 3.5 wt% of ceria abrasive particles, about 0.175 wt% of polyacrylic acid, and about 0.5 part by weight of ethylene glycol, and may have a pH of about 8 by adjusting the pH with ammonia. In addition, the abrasive particle dispersion may have a zeta potential of one of about -30 mV to about -45 mV. In addition, the average particle diameter of the ceria particles may be one of about 120 nm to about 150 nm.

[0231] Additionally, in order to derive the first zeta potential change rate, the abrasive particle dispersion and the additive composition according to the embodiment may be mixed at a weight ratio of about 1:1.

[0232] Since the additive composition according to the embodiment has the characteristics described above, the dispersion stability of the polishing particle dispersion can be further improved. Accordingly, the polishing slurry composition can have an improved polishing rate and low defect generation.

[0233] The additive composition according to the embodiment may have a first abrasive particle size change rate (SR1).

[0234] The above first abrasive particle size change rate can be expressed by the following mathematical formula 2.

[0235] [Formula 2]

[0236] SR1 = (S2-S1) / S1

[0237] Here, S1 is the average particle diameter of the abrasive particles included in the abrasive particle dispersion, and S2 is the average particle diameter of the abrasive particles included in the abrasive slurry composition.

[0238] The first abrasive particle size change rate may be from about -0.15 to about 1.5, from about -0.1 to about 0.1, from about -0.08 to about 0.08, from about -0.07 to about 0.07, from about -0.06 to about 0.06, from about -0.05 to about 0.05, or from about -0.04 to about 0.04.

[0239] Since the first particle size change rate has the above range, the polishing slurry composition can have stable performance. Accordingly, the additive composition according to the embodiment can impart an improved polishing rate and low defect generation to the polishing slurry composition.

[0240] In order to derive the above first abrasive particle size change rate, the abrasive particle dispersion may include water, about 3.5 wt% of ceria abrasive particles, about 0.175 wt% of polyacrylic acid, and about 0.5 part by weight of ethylene glycol, and may have a pH of about 8 by adjusting the pH with ammonia. In addition, the abrasive particle dispersion may have a zeta potential of one of about -30 mV to about -45 mV. In addition, the average particle diameter of the ceria particles may be one of about 120 nm to about 150 nm.

[0241] Additionally, in order to derive the first abrasive particle size change rate, the abrasive particle dispersion and the additive composition according to the embodiment may be mixed at a weight ratio of about 1:1.

[0242] Since the additive composition according to the embodiment has the characteristics described above, the dispersion stability of the polishing particle dispersion can be further improved. Accordingly, the polishing slurry composition can have an improved polishing rate and low defect generation.

[0243] The additive composition according to the embodiment can impart a second zeta potential change rate (ZR2) to the polishing slurry composition. That is, the polishing slurry composition can have the second zeta potential change rate by the additive composition according to the embodiment.

[0244] The above second zeta potential change rate can be expressed by the following equation 3.

[0245] [Formula 3]

[0246] ZR2 = (Z7-Z2) / Z2

[0247] Here, Z2 is the initial zeta potential of the polishing slurry composition. In addition, Z7 is the zeta potential of the polishing slurry composition after the polishing slurry composition has been left at a temperature of about 60°C for about 7 days.

[0248] The second zeta potential change rate may be from about -0.15 to about 1.5, from about -0.1 to about 0.1, from about -0.08 to about 0.08, from about -0.07 to about 0.07, from about -0.06 to about 0.06, from about -0.05 to about 0.05, or from about -0.04 to about 0.04.

[0249] Since the second zeta potential change rate has the above range, the polishing slurry composition can have stable performance. Accordingly, the additive composition according to the embodiment can impart an improved polishing rate and low defect generation to the polishing slurry composition.

[0250] In order to derive the second zeta potential change rate, the abrasive particle dispersion may include water, about 3.5 wt% of ceria abrasive particles, about 0.175 wt% of polyacrylic acid, and about 0.5 part by weight of ethylene glycol, and may have a pH of about 8 by adjusting the pH with ammonia, and the abrasive slurry composition may be a mixture of the additive composition according to the embodiment and the abrasive particle dispersion in a weight ratio of about 1:1. In addition, the abrasive particle dispersion may have a zeta potential of one of about -30 mV to about -45 mV. In addition, the average particle diameter of the ceria particles may be one of about 120 nm to about 150 nm.

[0251] Since the additive composition according to the embodiment has the characteristics described above, it can further improve the dispersion stability of the abrasive particle dispersion. In addition, the additive composition according to the embodiment can improve the reliability of the abrasive slurry composition. Accordingly, the abrasive slurry composition can have an improved polishing rate and low defect generation.

[0252] The additive composition according to the embodiment may have a second abrasive particle size change rate (SR2). The additive composition according to the embodiment may impart the second abrasive particle size change rate to the polishing slurry composition. That is, by the additive composition according to the embodiment, the polishing slurry composition may have the second abrasive particle size change rate.

[0253] The above second abrasive particle size change rate can be expressed by the following mathematical formula 4.

[0254] [Formula 4]

[0255] SR2 = (S7-S2) / S2

[0256] Here, S2 is the initial average particle diameter of the abrasive particles included in the polishing slurry composition. In addition, S7 is the average particle diameter of the abrasive particles measured in the polishing slurry composition after the polishing slurry composition has been left at a temperature of about 60°C for about 7 days.

[0257] The second abrasive particle size change rate may be from about -0.15 to about 1.5, from about -0.1 to about 0.1, from about -0.08 to about 0.08, from about -0.07 to about 0.07, from about -0.06 to about 0.06, from about -0.05 to about 0.05, or from about -0.04 to about 0.04.

[0258] Since the second particle size change rate has the above range, the polishing slurry composition can have stable performance. The polishing slurry composition can have appropriate reliability by the additive composition according to the embodiment. Accordingly, the additive composition according to the embodiment can provide the polishing slurry composition with an improved polishing rate and low defect generation.

[0259] In order to derive the second abrasive particle size change rate, the abrasive particle dispersion may include water, about 3.5 wt% of ceria abrasive particles, about 0.175 wt% of polyacrylic acid, and about 0.5 part by weight of ethylene glycol, and may have a pH of about 8 by adjusting the pH with ammonia, and the abrasive particle dispersion and the additive composition according to the embodiment may be mixed in a weight ratio of about 1:1. In addition, the abrasive particle dispersion may have a zeta potential of one of about -30 mV to about -45 mV. In addition, the average particle diameter of the ceria particles may be one of about 120 nm to about 150 nm.

[0260] The additive composition according to the embodiment may have an electrical conductivity change rate (CR). The additive composition according to the embodiment may impart the electrical conductivity change rate to the polishing slurry composition. That is, by the additive composition according to the embodiment, the polishing slurry composition may have the electrical conductivity change rate.

[0261] The above rate of change in electrical conductivity can be expressed by the following equation 5.

[0262] [Formula 5]

[0263] CR = (C7-C2) / C2

[0264] Here, C2 is the electrical conductivity of the polishing slurry composition. In addition, C7 is the electrical conductivity of the polishing slurry composition after the polishing slurry composition has been left at a temperature of about 60°C for about 7 days.

[0265] The above electrical conductivity change rate may be from about -0.15 to about 1.5, from about -0.1 to about 0.1, from about -0.08 to about 0.08, from about -0.07 to about 0.07, from about -0.06 to about 0.06, from about -0.05 to about 0.05, or from about -0.04 to about 0.04.

[0266] Since the above-mentioned rate of change in electrical conductivity is within the above-mentioned range, the polishing slurry composition can have stable performance. The polishing slurry composition can have appropriate reliability by the additive composition according to the embodiment. Accordingly, the additive composition according to the embodiment can impart an improved polishing rate and reduced defect generation to the polishing slurry composition.

[0267] Since the additive composition according to the embodiment has the characteristics described above, the dispersion stability of the polishing particle dispersion can be further improved. Accordingly, the polishing slurry composition can have an improved polishing rate and low defect generation.

[0268] The additive composition according to the embodiment may have a reducing power (RR). The reducing power may be an increase rate of trivalent cerium by addition of the additive composition according to the embodiment.

[0269] The above reducing power can be expressed by the following equation 6.

[0270] [Formula 6]

[0271] RR = (R1 - R2) / R1

[0272] Here, R2 is the ratio of trivalent cerium among the cerium included in the polishing slurry composition, and R1 is the ratio of trivalent cerium among the cerium included in the polishing particle dispersion.

[0273] The reducing power may be greater than about 0.03, greater than about 0.05, greater than about 0.1, greater than about 0.15, greater than about 0.2, greater than about 0.25, greater than about 0.3, or greater than about 0.35.

[0274] Additionally, the reducing power may be about 0.03 to about 0.7, about 0.05 to about 0.7, about 0.1 to about 0.6, about 0.15 to about 0.7, about 0.2 to about 0.6, about 0.25 to about 0.5, about 0.3 to about 0.5, or about 0.35 to about 0.6.

[0275] Since the reducing power has the above range, the additive composition according to the embodiment can provide a polishing slurry composition having improved polishing performance and low defects.

[0276] In order to derive the above reducing power, the abrasive particle dispersion contains water, about 3.5 wt% of ceria abrasive particles, about 0.175 wt% of polyacrylic acid, and about 0.5 wt% of ethylene glycol, has a zeta potential of about -30 mV, and can have a pH of about 8 by adjusting the pH with ammonia.

[0277] In addition, in order to derive the above reducing power, the abrasive particle dispersion and the additive composition according to the embodiment can be mixed in a weight ratio of about 1:1.

[0278] Since the additive composition according to the embodiment has the characteristics described above, the dispersion stability of the polishing particle dispersion can be further improved. Accordingly, the polishing slurry composition can have an improved polishing rate and low defect generation.

[0279] The ratio of trivalent cerium contained in the above polishing particle dispersion and the above polishing slurry composition can be derived by the following method.

[0280] The ratio of the above trivalent cerium can be measured by Raman spectroscopy. The ratio of the above trivalent cerium can be measured by Raman spectroscopy using photoluminescence. That is, in order to derive the ratio of the above trivalent cerium, the Raman spectra of the above polishing particle dispersion and the above polishing slurry composition can be derived.

[0281] The ratio of the above trivalent cerium may be the ratio of trivalent cerium among the trivalent cerium and tetravalent cerium included in the above polishing particle dispersion and the above polishing slurry composition.

[0282] The ratio of the above three ceriums (R1, R2) can be calculated by the following equation 7.

[0283] [Formula 7]

[0284] 3-valent cerium ratio = P1 / (P1+P2)

[0285] Here, the Raman spectrum is about 440 cm -1 About 450cm -1 It has the first peak at about 465 cm. -1 About 475 cm -1 It can have a second peak at the wavenumber. The P1 is the intensity of the first peak, and the P2 is the intensity of the second peak. The Raman spectrum is about 445 cm -1 About 447 cm -1 It has the first peak at about 469 cm. -1 About 471 cm -1 It may have a second peak at the wavelength. The Raman spectrum above is about 446 cm -1 It has the first peak at about 470 cm. -1 It may have a second peak at the wavelength.

[0286] In the above abrasive particle dispersion, the ratio of trivalent cerium may be about 0.3 to about 0.45, about 0.35 to about 0.45, about 0.37 to about 0.44, or about 0.38 to about 0.43 based on the Raman spectrum.

[0287] In the above polishing slurry composition, the ratio of trivalent cerium may be about 0.35 to about 0.6, about 0.40 to about 0.55, about 0.42 to about 0.53, or about 0.45 to about 0.55 based on the Raman spectrum.

[0288] Since the above polishing slurry composition has the above trivalent cerium ratio, it can have an improved polishing rate and improved dispersibility.

[0289] Additionally, the polishing slurry composition may have an absolute viscosity greater than about 0.93 cP at 25° C. The absolute viscosity of the polishing slurry composition may be from about 0.93 cP to about 1.1 cP, from about 0.935 cP to about 1.1 cP, or from about 0.93 cP to about 1.0 cP at about 25° C.

[0290] A method for manufacturing a semiconductor device according to one embodiment may include the steps of preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate.

[0291] Fig. 1 schematically illustrates a device configuration for a method for manufacturing a semiconductor device according to one embodiment. Referring to Fig. 1, the method for manufacturing a semiconductor device includes a step of arranging a polishing surface (111) of a polishing pad (110) so that the polishing surface of a polishing target (130) is in contact with the polishing surface; and a step of injecting a polishing slurry composition (150) onto the polishing surface (111).

[0292] The polishing target (130) may include a semiconductor wafer having a silicon nitride film and a silicon oxide film. Specifically, the polishing surface may include a surface requiring simultaneous polishing of the silicon nitride film and the silicon oxide film. Since the polishing target (130) and its polishing surface have these characteristics, the polishing slurry composition

[0293] The above polishing pad (110) may have a surface hardness measured on the polishing surface (111) of about 50 to about 70, for example, about 50 to about 65, for example, about 55 to about 65 in terms of Shore D hardness. A method for measuring the Shore D surface hardness on the polishing surface may be widely applied using a method commonly used in the relevant technical field, but for example, a sample may be prepared by cutting the polishing pad into a size of 2 cm × 2 cm (thickness: 2 mm), and then left to stand for 16 hours in an environment of a temperature of 25°C and a humidity of 50±5%, and then measured using a hardness meter (D-type hardness meter). When the hardness on the polishing surface (111) satisfies this range, the semiconductor process composition (150) can flow at the contact interface between the polishing surface (111) and the polishing target (130) to exhibit a physically appropriate elastic correlation with the polishing pad (110), and as a result, the semiconductor device manufactured by the method for manufacturing the semiconductor device can be more advantageous in exhibiting high polishing flatness without defects such as scratches.

[0294] The polishing pad (110) may include a groove or a groove on the polishing surface (111). The groove or groove is a configuration for controlling the fluidity of the semiconductor process composition (150) injected onto the polishing surface (111), and its shape is not particularly limited, but its depth may be, for example, about 300 ㎛ to about 900 ㎛, for example, about 300 ㎛ to about 850 ㎛, for example, about 400 ㎛ to about 850 ㎛, for example, about 450 ㎛ to about 850 ㎛, for example, about 500 ㎛ to about 800 ㎛, for example, about 550 ㎛ to about 800 ㎛, for example, about 600 ㎛ to about 800 ㎛. In addition, the width of the groove or the groove may be about 100 µm to about 600 µm, for example, about 200 µm to about 600 µm, for example, about 200 µm to about 550 µm, for example, about 300 µm to about 550 µm, for example, about 350 µm to about 550 µm. When the depth and width of the groove or the groove satisfy this range, it may be more advantageous in providing optimized fluidity to the composition for the semiconductor process.

[0295] The fact that the polishing surface (111) of the polishing pad (110) and the polishing target surface (130) come into contact with each other can be interpreted to include not only cases where they are in direct physical contact with each other, but also cases where they are indirectly in contact with each other through the semiconductor process composition.

[0296] The step of injecting the semiconductor process composition (150) onto the polishing surface (111) may be specifically performed by injecting the semiconductor process composition (150) onto the polishing surface (111) through a supply nozzle (140). In one embodiment, the flow rate of the semiconductor process composition (150) injected through the supply nozzle (140) may be about 10 ml / min to about 1,000 ml / min, for example, about 10 ml / min to about 800 ml / min, for example, about 50 ml / min to about 500 ml / min, for example, about 80 ml / min to about 400 ml / min, for example, about 100 ml / min to about 300 ml / min, for example, about 150 ml / min to about 300 ml / min. When the semiconductor process composition (150) is injected onto the polishing surface (111) at a flow rate within this range, the frictional behavior between the polishing surface (111) and the surface to be polished through this may be more advantageous in improving the polishing performance of the surface to be polished. More specifically, it may be more advantageous in achieving the desired polishing selectivity and simultaneously implementing the effect of preventing defects such as scratches due to the solid content in the semiconductor process composition.

[0297] The method for manufacturing the semiconductor device includes a step of polishing the surface to be polished while relatively rotating the polishing pad (110) and the polishing target (130). Referring to FIG. 1, the polishing pad (110) is mounted on a platen (120) so that the polishing surface (111) becomes the uppermost surface, and the polishing target (130) can be accommodated in a carrier (160) so that the surface to be polished becomes the lowermost surface. The polishing pad (110) and the polishing target (130) can rotate at the same speed and trajectory as the platen (120) and the carrier (160) rotate, respectively. Relative rotation of the polishing pad (110) and the polishing target (130) means that they rotate while the polishing surface and the surface to be polished are arranged to be in contact with each other. The rotation direction of the polishing pad (110) and the rotation direction of the polishing target (130) may be opposite to each other or may be in the same direction.

[0298] In one embodiment, the rotation speeds of the polishing pad (110) and the polishing target (130) may each independently be about 10 rpm to about 500 rpm, for example, about 30 rpm to about 200 rpm. When the polishing pad (110) and the polishing target (130) each rotate at a rotation speed within the above range, the frictional behavior of the polishing surface (111) and the surface to be polished due to the centrifugal force thereof is mutually linked with the semiconductor process composition (150) injected onto the polishing surface (111), so that the surface to be polished can be polished to have a high polishing flatness, and it may be more advantageous to polish without defects.

[0299] In one embodiment, the rotation speed of the polishing target (130) may be greater than the rotation speed of the polishing pad (110). By rotating the polishing target (130) at a higher speed than the polishing pad (110), polishing stability can be secured, and at the same time, the polishing surface of the polishing target (130) can be more advantageously polished without defects.

[0300] In one embodiment, the method for manufacturing the semiconductor device may relatively rotate the polishing pad (110) and the polishing target (130) under conditions in which the polishing surface is pressed against the polishing surface (111). The load applied to the polishing surface against the polishing surface (111) may be, for example, about 0.01 psi to about 20 psi, for example, about 0.1 psi to about 15 psi.

[0301] The method for manufacturing the semiconductor device may further include a step of processing the polishing surface (111) using a conditioner (170). The polishing surface (111) of the polishing pad (110) is subjected to a chemical influence as the semiconductor process composition (150) is continuously supplied, and at the same time, is subjected to a physical influence due to physical contact with the surface to be polished of the polishing object (130). If the state of the polishing surface (111) is modified due to such chemical / physical influences, it may be difficult to uniformly maintain polishing performance for the surface to be polished. The conditioner (170) serves as a means for processing the polishing surface (111) during the polishing process, and can contribute to uniformly maintaining the polishing surface (111) in a state suitable for polishing throughout the polishing process.

[0302] For example, the conditioner (170) may perform the function of roughening the polishing surface (111) while rotating at a predetermined speed. The rotation speed of the conditioner (170) may be, for example, about 10 rpm to about 500 rpm, for example, about 50 rpm to about 500 rpm, for example, about 100 rpm to about 500 rpm, for example, about 200 rpm to about 500 rpm, for example, more than about 200 rpm and less than about 400 rpm.

[0303] The conditioner (170) can rotate while applying a predetermined pressure to the polishing surface (111) of the polishing pad (110). For example, the pressure applied to the polishing surface (111) of the conditioner (170) may be about 1 psi to about 20 psi, for example, about 1 psi to about 15 psi, for example, about 5 psi to about 15 psi, for example, about 5 psi to about 10 psi.

[0304] By performing surface treatment under the process conditions described above through the conditioner (170), the polishing surface (111) can maintain an optimal surface state throughout the polishing process, and the effect of extending the polishing life can be obtained under the application conditions of the semiconductor process composition (150).

[0305] The additive composition according to the embodiment may include a first dispersion stabilizer and a second dispersion stabilizer. In particular, the second dispersion stabilizer may include a nonionic stabilizer or a cationic stabilizer.

[0306] Accordingly, the additive composition according to the embodiment can improve the dispersibility of abrasive particles such as ceria particles. In particular, the first dispersion stabilizer and the second dispersion stabilizer can effectively complement the dispersant, thereby improving the dispersibility of the abrasive particles.

[0307] In addition, the additive composition according to the embodiment can be mixed into an abrasive particle dispersion containing the abrasive particles to form a polishing slurry composition. The polishing slurry composition can have a low zeta potential change and a low particle size change even when left at a high temperature for a long period of time. Accordingly, the additive composition according to the embodiment can have improved stability with respect to changes over time in the polishing slurry composition.

[0308] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can suppress agglomeration of the abrasive particles. Accordingly, the additive composition according to the embodiment can prevent defects in the manufacturing process of a semiconductor device.

[0309] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can uniformly polish the semiconductor substrate. Accordingly, the additive composition and the polishing slurry composition according to the embodiment can suppress dishing and skew.

[0310] Fig. 2 is a cross-sectional view illustrating a process in which dishing occurs in a polishing process according to one embodiment. Fig. 3 is a cross-sectional view illustrating a process in which skew occurs in a polishing process according to one embodiment.

[0311] The above polishing target (130) may be a semiconductor substrate.

[0312] As shown in FIGS. 2 and 3, the semiconductor substrate may include a silicon wafer (10), a polishing target film (20), and a non-polishing target film (30).

[0313] The above polishing target film (20) may include a silicon oxide film, and the above polishing non-target film (30) may include a silicon nitride film.

[0314] The above polishing target film (20) may have a relatively high polishing rate with respect to the polishing slurry composition, and the polishing non-target film (30) may have a relatively low polishing rate with respect to the polishing slurry composition. The polishing slurry composition may have a selectivity of about 10 to about 50 with respect to the polishing target film (20) based on the polishing non-target film (30).

[0315] As illustrated in Fig. 2, in the polishing process, the polishing non-target film (30) may be etched more than the polishing target film (20). Accordingly, dishing (D) may occur in the polishing non-target film (30). The dishing (D) may be a height difference between the polishing target film (20) and the polishing non-target film (30) caused by the over-etching.

[0316] In addition, as illustrated in FIG. 3, in the polishing process, the polishing target film (20) may be etched more than the non-polishing target film (30). Accordingly, a skew (S) may occur in the polishing target film (20).

[0317] The above skew (S) may be a height difference between the polishing target film (20) and the non-polishing target film (30) caused by the overetching.

[0318] The additive composition according to the embodiment comprises water; a dispersant; a reducing agent; a pH regulator; and a stabilizer, and may have an appropriate pH and an improved reducing power.

[0319] Accordingly, the additive composition according to the embodiment can effectively improve the ratio of trivalent cerium contained in ceria particles.

[0320] In particular, the additive composition according to the embodiment may include a high content of the reducing agent, such as sugar, etc. Accordingly, the additive composition according to the embodiment may improve the viscosity of the polishing slurry composition while also improving the reducing power.

[0321] Accordingly, the polishing slurry composition including the additive composition according to the embodiment can improve the remaining time on the polishing pad and wafer, and improve the polishing rate and profile characteristics.

[0322] In addition, since the viscosity of the polishing slurry composition increases, the load applied to the semiconductor substrate on the polishing pad can increase. That is, even if the load applied to the semiconductor substrate increases, the polishing slurry composition can effectively remain between the semiconductor substrate and the polishing pad. Accordingly, the polishing rate of the semiconductor substrate can be improved.

[0323] Additionally, the additive composition according to the embodiment may include a dispersant, a dispersion stabilizer, and a fluorinated surfactant in appropriate amounts. Accordingly, the additive composition according to the embodiment may improve the dispersibility of the abrasive particles.

[0324] The additive composition according to the embodiment may include a first dispersion stabilizer and a second dispersion stabilizer. In particular, the second dispersion stabilizer may include a nonionic stabilizer or a cationic stabilizer.

[0325] Accordingly, the additive composition according to the embodiment can improve the dispersibility of abrasive particles such as ceria particles. In particular, the first dispersion stabilizer and the second dispersion stabilizer can effectively complement the dispersant, thereby improving the dispersibility of the abrasive particles.

[0326] In addition, the additive composition according to the embodiment can be mixed into an abrasive particle dispersion containing the abrasive particles to form a polishing slurry composition. The polishing slurry composition can have a low zeta potential change and a low particle size change even when left at a high temperature for a long period of time. Accordingly, the additive composition according to the embodiment can have improved stability with respect to changes over time in the polishing slurry composition.

[0327] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can suppress agglomeration of the abrasive particles. Accordingly, the additive composition according to the embodiment can prevent defects in the manufacturing process of a semiconductor device.

[0328] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can uniformly polish the semiconductor substrate. Accordingly, the additive composition and the polishing slurry composition according to the embodiment can suppress dishing and skew.

[0329] The additive composition according to the embodiment can adjust the pH by combining a basic pH adjuster and an acidic pH adjuster having an appropriate pKa. In addition, the additive composition according to the embodiment can include a dispersant having a predetermined pKa.

[0330] At this time, the additive composition according to the embodiment can maximize the dispersing effect of the dispersing agent by appropriately combining the basic pH regulator and the acidic pH regulator to appropriately control the pH.

[0331] Additionally, the additive composition according to the embodiment may include polyacrylic acid having an appropriate pKa as a dispersant. Additionally, the additive composition according to the embodiment may include a fluorinated surfactant. Additionally, the additive composition according to the embodiment may further include glycine and a saccharide.

[0332] Accordingly, the additive composition according to the embodiment can improve the dispersibility of abrasive particles such as ceria particles. In particular, the acidic pH adjuster and the basic pH adjuster can effectively complement the dispersant, thereby improving the dispersibility of the abrasive particles.

[0333] In addition, the additive composition according to the embodiment can be mixed into an abrasive particle dispersion containing the abrasive particles to form a polishing slurry composition. The polishing slurry composition can have a low zeta potential change and a low particle size change even when left at a high temperature for a long period of time. Accordingly, the additive composition according to the embodiment can have improved stability with respect to changes over time in the polishing slurry composition.

[0334] In addition, since the additive composition according to the embodiment improves the dispersibility of the abrasive particles, the polishing slurry composition can suppress agglomeration of the abrasive particles. Accordingly, the additive composition according to the embodiment can prevent defects in the manufacturing process of a semiconductor device.

[0335] In addition, since the additive composition according to the embodiment includes the basic pH adjuster and the acidic pH adjuster, the polishing rate and selectivity of the polishing slurry composition can be improved.

[0336] Specific embodiments of the present invention are presented below. However, the embodiments described below are merely intended to specifically illustrate or explain the present invention, and the scope of the rights of the present invention is not construed as being limited thereby, and the scope of the rights of the present invention is determined by the claims.

[0337]

[0338] Manufacturing example

[0339] Polyacrylic acid (PAA, weight average molecular weight 30,000 g / mol, pKa 4.5) (Polyscience product)

[0340] Polyglycerine #1 (polyglycerine, PG #1, weight average molecular weight 310 g / mol) (Sigma-Aldrich product)

[0341] Polyglycerine #2 (polyglycerine, PG #2, weight average molecular weight 500 g / mol) (Sigma-Aldrich product)

[0342] Polyglycerine #3 (polyglycerine, PG #3, weight average molecular weight 750 g / mol) (Sigma-Aldrich product)

[0343] Polyvinylpyrrolidone (PVP, weight average molecular weight 10,000 g / mol, Sigma-Aldrich product)

[0344] Polydiallyldimethylammonium chloride (PDA, weight average molecular weight 10,000 g / mol, Sigma-Aldrich product)

[0345] Polymethacrylate (PMA, weight average molecular weight 15,000 g / mol, product of Pharmatron)

[0346] Glycine (Sigma-Aldrich product)

[0347] Polyoxyethylene Stearyl Amine Ether (SM-30, amine value 34-37 mg KOH / g, Green Chemical Co., Ltd.)

[0348] ethylene glycol (EG)

[0349] triethylamine (TEA)

[0350] dextrose (DX)

[0351] 4,4,6,6,8,8,8-Heptafluorooctan-1-ol (FS)

[0352] Ceria particles (average particle size 140 nm, Solvay product)

[0353] 2-Pyridinecarboxylic acid (PA, Waco)

[0354] Nitric acid (9 wt% aqueous solution, pKa 1.3)

[0355] Acetic acid (concentration 10 wt%, pKa 4.6)

[0356] Citric acid (concentration 10 wt%, pKa 4.76)

[0357] The pKa of the above raw materials was measured at room temperature.

[0358]

[0359] Additive Composition #1

[0360] About 100 parts by weight of deionized water, about 0.1 part by weight of polyacrylic acid, about 1.2 parts by weight of triethylamine, about 0.15 part by weight of polyglycerin #1, 5 parts by weight of dextrose, about 0.5 part by weight of ethylene glycol, and about 0.0075 part by weight of 4,4,6,6,8,8,8-heptafluorooctan-1-ol were mixed, and nitric acid was added to prepare an additive composition #1 having a pH of 7.5.

[0361] Additive compositions #2 to #8

[0362] As shown in Table 1 below, each component was uniformly mixed to prepare additive compositions #2 to #8.

[0363] Additive composition #1 (parts by weight) Additive composition #2 (parts by weight) Additive composition #3 (parts by weight) Additive composition #4 (parts by weight) Additive composition #5 (parts by weight) Additive composition #6 (parts by weight) Additive composition #7 (parts by weight) Additive composition #8 (parts by weight) Deionized water 100 100 100 100 100 100 100 100 100 PAA 0. 10. 10. 10. 10. 10. 10. 1 TEA 1. 21. 21. 21. 21.21.21.2DX5555555EG0.50.50.50.50.50.50.50.5PG#10.15PG#20.15PG#30.15PVP0.15PDA0.15PMA0.15SM-300.15FS0.00750.00750.00750.00750.00750.00750.00750.00750.0075pH7.57.57.57.57.57.57.5Electric Conductivity (μs / cm) 3650 3530 3650 3660 3760 3650 3648 3540 Absolute viscosity (25℃. cP) 1.20 31.20 91.20 91.22 21.177 1.21 21.20 31.198

[0364] Additive Composition #9

[0365] About 100 parts by weight of deionized water, about 1.2 parts by weight of triethylamine, 5 parts by weight of dextrose, 0.06 parts by weight of glycine, 0.015 parts by weight of polyoxyethylene stearyl amine ether, and about 0.0075 parts by weight of 4,4,6,6,8,8,8-heptafluorooctan-1-ol were uniformly mixed, and nitric acid was added to the mixture to prepare an additive composition #1 having a pH of 7.8.

[0366] Additive composition #10 to #12

[0367] As shown in Table 2 below, each component was uniformly mixed to prepare additive compositions #2 to #8.

[0368] Additive composition #9 (parts by weight) Additive composition #10 (parts by weight) Additive composition #11 (parts by weight) Additive composition #12 (parts by weight) Deionized water 100 100 100 100 PAA 0.05 0.05 0.05 0.05 TEA 1.21 21 21 21 DX543-glycine 0.06 0.06 0.06 0.06 SM-30 0.01 50 0.01 50 0.01 50 0.01 5 FS 0.00 7 50 0.00 7 50 0.00 7 5 pH 7.8 7.8 7.8 7.8 Absolute viscosity (25℃. cP) 1.20 3 1.20 9 1.20 9 0.93 5

[0369] Additive Composition #13

[0370] About 100 parts by weight of deionized water, about 0.1 part by weight of polyacrylic acid, about 1.2 parts by weight of triethylamine, 5 parts by weight of dextrose, about 0.5 part by weight of ethylene glycol, about 0.0075 part by weight of 4,4,6,6,8,8,8-Heptafluorooctan-1-ol, and about 0.3 part by weight of nitric acid were uniformly mixed to prepare additive composition #1.

[0371] Additive compositions #14 to #32

[0372] As shown in Tables 3 to 5 below, each component was uniformly mixed to prepare additive compositions #14 to #32.

[0373] Additive composition #13 (parts by weight) Additive composition #14 (parts by weight) Additive composition #15 (parts by weight) Additive composition #16 (parts by weight) Additive composition #17 (parts by weight) Additive composition #18 (parts by weight) Additive composition #19 (parts by weight) Additive composition #20 (parts by weight) Deionized water 100 100 100 100 100 100 100 100 PAA 0.10. 10. 10. 10. 10. 30. 10. 1 TEA 1.21. 21. 21. 21. 20 .61.21.2DX5555555EG0.50.50.50.50.5111GlycineSM-300.030.030.030.030.030.060.060.06FS0.00750.00750.00750.00750.00750.00750.00750.00750.00750.0075Nitric acid0.20.270.370.30.420.50.70.8Acetic acidCitric acidpH7.87.57.37.277.37.16.9

[0374] Additive composition #21 (parts by weight) Additive composition #22 (parts by weight) Additive composition #23 (parts by weight) Additive composition #24 (parts by weight) Additive composition #25 (parts by weight) Additive composition #26 (parts by weight) Additive composition #27 (parts by weight) Additive composition #28 (parts by weight) Deionized water 100 100 100 100 100 100 100 100 100 PAA 0.30 30 30 30 30 30 50 50 50 TEA 0.60 50 50 50 51. 21.21.2DX5555555EG11111Glycine0.60.60.6SM-300.060.060.060.060.060.060.0150.0150.0150.015FS0.00750.00750.00750.00750.00750.00750.00750.00750.00750.0075Nitric acid0.90.30.40.50.60.270.310.32Acetic acidCitric acidpH6.76.76.66.46.37.87.77.6

[0375] Additive composition #29 (weight parts) Additive composition #30 (weight parts) Additive composition #31 (weight parts) Additive composition #32 (weight parts) Deionized water 100 100 100 100 PAA 0.5 0.5 0.5 0.5 TEA 1.2 1.2 1.2 1.2 DX 5 5 5 EG Glycine 0.6 0.6 0.6 0.6 SM-30 0.0 15 0.0 15 0.0 15 0.0 15 0.0 15 FS 0.0 0 7 5 0.0 0 7 5 0.0 0 7 5 0.0 0 7 5 Nitric acid 0.3 4 0.3 5 Acetic acid 0.4 9 Citric acid 0.4 7 pH 7.5 7.4 7.4

[0376]

[0377] Abrasive particle dispersion

[0378] About 100 parts by weight of deionized water, about 2.5 parts by weight of ceria particles, about 0.5 parts by weight of polyacrylic acid, about 0.175 parts by weight of 2-picoline carboxylic acid, about 8.3 parts by weight of ethylene glycol, and about 0.005 parts by weight of 4,4,6,6,8,8,8-heptafluorooctan-1-ol were uniformly mixed, and ammonia was added to the mixture, thereby producing an abrasive particle dispersion having a pH of 7.415.

[0379] Dispersion of polishing particles (by weight) Deionized water 100 Ceria particles 2.5 PAA 0.5 PA 0.175 EG 8.3 FS 0.005 pH 7.4 15 Particle size 137.9 Zeta potential -41.1

[0380] <Examples and Comparative Examples>

[0381] Example 1

[0382] Additive composition #1, abrasive particle dispersion, and deionized water were uniformly mixed at a weight ratio of about 2:1:10 at a speed of about 150 rpm for about 1 hour, thereby preparing abrasive slurry composition #1.

[0383] Examples 2 to 7 and Comparative Example 1

[0384] As shown in Table 7 below, additive compositions #2 to #8 and abrasive particle dispersions were mixed to prepare polishing slurry compositions #1 to #8.

[0385] Distinctive components (weight ratio) Example 1 (Polishing slurry composition #1) Additive composition #1 + Polishing particle dispersion + deionized water (2:1:10) Example 2 (Polishing slurry composition #2) Additive composition #2 + Polishing particle dispersion + deionized water (2:1:10) Example 3 (Polishing slurry composition #3) Additive composition #3 + Polishing particle dispersion + deionized water (2:1:10) Example 4 (Polishing slurry composition #4) Additive composition #4 + Polishing particle dispersion + deionized water (2:1:10) Example 5 (Polishing slurry composition #5) Additive composition #5 + Polishing particle dispersion + deionized water (2:1:10) Example 6 (Polishing slurry composition #6) Additive composition #6 + Polishing particles Dispersion + deionized water (2:1:10) Example 7 (Polishing slurry composition #7) Additive composition #7 + polishing particle dispersion + deionized water (2:1:10) Comparative example (Polishing slurry composition #8) Additive composition #8 + polishing particle dispersion + deionized water (2:1:10)

[0386] Example 8

[0387] Additive composition #9, abrasive particle dispersion, and deionized water were uniformly mixed at a weight ratio of about 2:1:10 at a speed of about 150 rpm for about 1 hour, thereby preparing abrasive slurry composition #1.

[0388] Examples 9 and 10 and Comparative Example 2

[0389] As shown in Table 8 below, additive compositions #10 to #12 and abrasive particle dispersions were mixed to prepare polishing slurry compositions #10 to #12.

[0390] Distinctive components (weight ratio) Example 8 (Polishing slurry composition #9) Additive composition #1 + Polishing particle dispersion + deionized water (2:1:10) Example 9 (Polishing slurry composition #10) Additive composition #2 + Polishing particle dispersion + deionized water (2:1:10) Example 10 (Polishing slurry composition #11) Additive composition #3 + Polishing particle dispersion + deionized water (2:1:10) Comparative example 2 (Polishing slurry composition #12) Additive composition #8 + Polishing particle dispersion + deionized water (2:1:10)

[0391] Example 11

[0392] Additive composition #13, abrasive particle dispersion, and deionized water were uniformly mixed at a weight ratio of about 2:1:10 at a speed of about 150 rpm for about 1 hour, thereby preparing abrasive slurry composition #1.

[0393] Examples 12 to 28 and Comparative Examples 3 and 4

[0394] As shown in Table 9 below, additive compositions #13 to #32, abrasive particle dispersion, and deionized water were mixed to prepare polishing slurry compositions #13 to #32.

[0395] Distinctive components (weight ratio) Example 11 (Polishing slurry composition #13) Additive composition #1 + Polishing particle dispersion + deionized water (2:1:10) Example 12 (Polishing slurry composition #14) Additive composition #2 + Polishing particle dispersion + deionized water (2:1:10) Example 13 (Polishing slurry composition #15) Additive composition #3 + Polishing particle dispersion + deionized water (2:1:10) Example 14 (Polishing slurry composition #16) Additive composition #4 + Polishing particle dispersion + deionized water (2:1:10) Example 15 (Polishing slurry composition #17) Additive composition #5 + Polishing particle dispersion + deionized water (2:1:10) Example 16 (Polishing slurry composition #18) Additive composition #6 + Polishing particles Dispersion + deionized water (2:1:10) Example 17 (Polishing slurry composition #19) Additive composition #7 + polishing particle dispersion + deionized water (2:1:10) Example 18 (Polishing slurry composition #20) Additive composition #8 + polishing particle dispersion + deionized water (2:1:10) Example 19 (Polishing slurry composition #21) Additive composition #9 + polishing particle dispersion + deionized water (2:1:10) Example 20 (Polishing slurry composition #22) Additive composition #10 + polishing particle dispersion + deionized water (2:1:10) Example 21 (Polishing slurry composition #23) Additive composition #11 + polishing particle dispersion + deionized water (2:1:10) Example 22 (Polishing slurry composition #24) Additive composition #12 + polishing particle dispersion + deionized water (2:1:10) Example 23 (Polishing slurry composition #25) Additive composition #13 + polishing particle dispersion + deionized water (2:1:10) Example 24 (Polishing slurry composition #26) Additive composition #14 + polishing particle dispersion + deionized water (2:1:10) Example 25 (Polishing slurry composition #27) Additive composition #15 + polishing particle dispersion + deionized water (2:1:10) Example 26 (Polishing slurry composition #28) Additive composition #16 + polishing particle dispersion + deionized water (2:1:10) Example 27 (Polishing slurry composition #29) Additive composition #17 + polishing particles Dispersion + deionized water (2:1:10) Example 28 (Polishing slurry composition #30) Additive composition #18 + polishing particle dispersion + deionized water (2:1:10) Comparative example 3 (PolishingSlurry composition #31) Additive composition #19 + polishing particle dispersion + deionized water (2:1:10) Comparative example 4 (Polishing slurry composition #32) Additive composition #20 + polishing particle dispersion + deionized water (2:1:10)

[0396] Evaluation

[0397] Measurement Example 1: Measurement of hydrogen ion concentration (pH)

[0398] The pH of the above silica dispersion solution was measured using a hydrogen ion concentration (pH) measuring device (Horiba, Laqua) while stirring at 200 rpm under room temperature conditions of 20°C to 24°C.

[0399] Measurement Example 2: Polishing rate measurement

[0400] For each of the above examples and comparative examples, a silicon oxide wafer having a thickness of about 20,000 Å and a silicon nitride wafer having a thickness of about 2,000 Å were prepared. As illustrated in Fig. 1, the wafers were accommodated in a carrier (160) with the polishing surface facing downward as a polishing target (130). After positioning the carrier (160) so that the polishing surface and the polishing surface (111) are in contact with each other on a platen (120) on which a polishing pad (110, SK Enpulse HD-319B) is mounted so that its polishing surface (111) faces upward, each component is operated for 60 seconds at a pressing pressure of 2.0 psi on the polishing surface of the carrier (160), a rotation speed of 93 rpm of the carrier (160), and a rotation speed of 87 rpm of the platen (120), and polishing is performed while applying the semiconductor process compositions of each of the examples and comparative examples to the polishing surface at a flow rate of 250 ml / min. At the same time, the polishing surface is processed by operating a conditioner (170, Saesol Diamond SKC-CI45) under the conditions of a rotation speed of 250 rpm and a pressing pressure of 8 psi. The thickness of the above wafer after polishing was measured, and the polishing time and the thickness of the wafer before and after polishing were used to calculate the polishing rate value (Rox) in units of Å / min.

[0401] Measurement Example 3: Dissipation and Skew Measurement

[0402] A silicon oxide wafer containing a SiN pattern with a width of approximately 100 μm and a silicon nitride pattern with a width of approximately 1000 μm was prepared. The silicon oxide wafer containing the pattern was then polished using the same method as used for the polishing rate measurement. The dishing and skew of the pattern were then measured.

[0403] Measurement Example 4: Zeta potential and ceria particle size measurement

[0404] For each of the above Examples and Comparative Examples, the zeta potential and size of the ceria particles included in the polishing slurry compositions prepared in the Examples and Comparative Examples were measured using a zeta potential meter (Malvern). In addition, the polishing slurry compositions prepared in the Examples and Comparative Examples were left at a temperature of about 60°C for about 7 days, and then the zeta potential and size of the ceria particles were measured.

[0405] Measurement Example 5: Electrical Conductivity

[0406] The electrical conductivity of the additive composition, polishing slurry composition and polishing particle dispersion was measured using an electrical conductivity measuring instrument (Nano ZS, Malvern Instruments Ltd.).

[0407] Measurement Example 6: Absolute Viscosity

[0408] Absolute viscosity was measured by a viscometer (DV-Ⅱ+ Pro Viscometer, Brookfield) at a shear rate of 0 to 120 sec. -1 It was measured in the range.

[0409] Measurement Example 7: Raman Spectroscopy

[0410] The Raman intensity of ceria particles included in the polishing slurry compositions prepared in the examples and comparative examples was measured using SENTERRA RAMAN (Bruker) for the additive compositions, polishing slurry compositions, and polishing particle dispersions.

[0411] Measurement Example 8: Defect

[0412] The silicon oxide wafer was prepared. Subsequently, the silicon oxide wafer was polished using the same method as used for the polishing rate measurement. The optical thickness of the top surface of the polished silicon oxide wafer was then measured across the entire area, resulting in a polishing profile. From the polishing profile, the presence or absence of defects was determined based on the number of peaks exceeding approximately 10 Å.

[0413] O: No defects (peaks exceeding approximately 10Å)

[0414] X: Defect (peak exceeding approximately 10Å) present

[0415] As shown in Table 10 below, in the polishing slurry compositions according to the examples and comparative examples, the oxide film polishing rate, nitride film polishing rate, selectivity of the oxide film to the nitride film, dishing, and skew were measured.

[0416] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Comparative Example 1 Oxide film polishing rate (Å / min) 1 1 2 5 1 2 3 4 1 2 9 8 1 4 9 2 1 3 9 4 1 1 3 0 1 2 3 6 1 2 6 9 Nitride film polishing rate (Å / min) 6 1 6 2 6 3 6 5 5 4 7 4 7 1 6 8 Oxide film selectivity to nitride film 1 8.4 1 9.9 2 0.6 2 3 2 5.8 1 5.3 1 7.4 1 8.7 1 000 ㎛ Pattern dishing (Å) 3 2 8 3 7 0 3 9 4 3 1 7 4 2 4 3 1 6 5 8 3 7 2 9 1 00 ㎛ Pattern dishing (Å) 1 7 7 1 7 6 1 5 6 2 9 7 2 8 2 2 3 9 4 2 8 5 3 4 1 00 ㎛ Pattern skew (Å) 4 1 3 5 8 1 1 4 8 5 6 4 1 8 2 2 0 3 1 00 ㎛ Pattern Skew (Å)66573415911984239321

[0417] As shown in Table 11 below, in the polishing slurry compositions according to the examples and comparative examples, the electrical conductivity and the zeta potential and size of the ceria particles were measured.

[0418] Classification Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Comparative Example 1 Initial Electrical Conductivity (μs / cm) 805804814810840800820790 After 7 days, Electrical Conductivity (μs / cm) 815827821829841845834814 Initial Zeta Potential (mV) -43.7-42.7-42.3-43.8-43.7-40.6-39.6-39.9 Zeta Potential after 7 days (mV) -44.1-44.8-44.6-44.1-43.4-42.7-41.5-41.3 Initial Ceria Particles Size (nm) 142.8 142.1141.3 140.5 142.3 144.6 142.4 143.27 days later, ceria particle size (nm) 140.9 141.8 140.1142.2 139.9 139 135 133 Initial electrical conductivity (μs / cm) 805 804 814810840800820790 After 7 days, electrical conductivity (μs / cm) 815 827 8218 29841845834814

[0419] As described in Tables 10 and 11, the polishing slurry compositions according to the examples can have improved polishing rates, selectivities, dishing, skew, and stability over time.

[0420] As shown in Table 12 below, in the polishing slurry compositions according to the examples and comparative examples, the oxide film polishing rate, nitride film polishing rate, selectivity of the oxide film to the nitride film, cerium trivalent ratio, reducing power, and absolute viscosity were measured.

[0421] Dispersion of polishing particles Example 8 Example 9 Example 10 Comparative Example 2 First peak intensity (446 cm -1 )27762688264325982807Second peak century (470cm) -1 )38702853284928303997Oxide film polishing rate (Å / min)108210651029841Nitride film polishing rate (Å / min)39332736Selectivity283240233Cerium ratio0.4180.4850.4810.4780.412Reducing power0.16140.15210.1459-0.0123Absolute viscosity (25℃, cP)0.9400.9410.9420.925

[0422] As described in Table 8, the polishing slurry composition according to the examples can have improved polishing rates and selectivities.

[0423] As shown in Table 13 below, in the polishing slurry compositions according to the examples and comparative examples, the oxide film polishing rate, nitride film polishing rate, selectivity of the oxide film to the nitride film, dishing, and skew were measured.

[0424] Oxide polishing rate (Å / min) Nitride polishing rate (Å / min) Oxide selectivity compared to nitride Non-defective Example 1114013738O Example 1213334629O Example 1312706719O Example 1412088814O Example 1511189911.3O Example 167393025O Example 178203523O Example 188303822O Example 198404021O Example 206753419.9O Example 216933519.8O Example 227433819.6O Example 237544118.4O Example 2410803828.4O Example 2510754225.6O Example 2610455020.0O Example 2710215717.9O Example 289686714.4O Comparative Example 310825619X Comparative Example 46235112X

[0425] As described in Table 13, the polishing slurry composition according to the examples can have improved polishing rates, selectivities, and low defects.

Claims

1. Dispersant; reducing agent; alkaline pH adjuster; First dispersion stabilizer; and An additive composition for a semiconductor polishing process, comprising a nonionic stabilizer or a cationic stabilizer, and a second dispersion stabilizer having a higher molecular weight than the first dispersion stabilizer.

2. An additive composition for a semiconductor polishing process, further comprising a fluorine-based surfactant in claim 1.

3. An additive composition for a semiconductor polishing process, wherein the zeta potential change rate (ZR2) expressed by the following mathematical formula 3 in the first paragraph is -0.1 to 0.

1. [Formula 3] ZR2 = (Z2 - Z7) / Z2 Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, Z2 is the zeta potential of the polishing slurry composition, and Z7 is the zeta potential of the polishing slurry composition after being left at a temperature of 60°C for 7 days.

4. An additive composition for a semiconductor polishing process, wherein the polishing particle size change rate (SR2) expressed by the following mathematical formula 4 in the third paragraph is -0.1 to 0.

1. [Formula 4] SR4 = (S2 - S7) / S2 Here, S2 is the size of the abrasive particles measured in the abrasive slurry composition, and S7 is the size of the abrasive particles measured in the abrasive slurry composition after being left at a temperature of 60°C for 7 days.

5. In the first paragraph, the nonionic stabilizer is at least one selected from the group comprising polyglycerin or polyvinylpyrrolidone, An additive composition for a semiconductor polishing process, wherein the cationic stabilizer is at least one selected from the group consisting of polydiallylethylamine or dextrin.

6. In the fifth paragraph, the dispersant has a molecular weight of 10,000 to 100,000 and a pH of 1 to 6, and is an additive composition for a semiconductor polishing process.

7. In the 6th paragraph, the basic pH adjusting agent is an additive composition for a semiconductor polishing process containing an amine.

8. In the 7th paragraph, the first dispersion stabilizer is an additive composition for a semiconductor polishing process comprising glycol.

9. Water; dispersant; reducing agent; and Contains pH adjuster, The pH is 7 to 9, An additive composition for a semiconductor polishing process having a reducing power exceeding 0.15, as expressed by the following formula 6. [Formula 6] RR = (R1 - R2) / R1 Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, R2 is the ratio of trivalent cerium among the cerium included in the polishing slurry composition, and R1 is the ratio of trivalent cerium among the cerium included in the polishing particle dispersion.

10. An additive composition for a semiconductor polishing process, wherein the reducing power in paragraph 9 exceeds 0.

2.

11. In the 10th paragraph, the reducing agent is an additive composition for a semiconductor polishing process comprising dextrose.

12. An additive composition for a semiconductor polishing process, comprising the reducing agent in an amount exceeding 3 parts by weight based on 100 parts by weight of water in the 11th paragraph.

13. An additive composition for a semiconductor polishing process having a viscosity exceeding 1.1 cP at a temperature of 25°C, according to claim 12.

14. In the 13th paragraph, the dispersant comprises polyacrylic acid having a molecular weight of 10,000 to 100,000 and a pH of 1 to 6, The above pH adjusting agent is an additive composition for a semiconductor polishing process containing an amine.

15. An additive composition for a semiconductor polishing process, further comprising at least one of glycine, fluorinated alcohol, or dextrin in the 14th paragraph.

16. An additive composition for a semiconductor polishing process, wherein the additive composition has a viscosity of 1.1 cP to 3.0 cP at a temperature of 25°C in accordance with claim 9.

17. Dispersant; reducing agent; Dispersion stabilizer; alkaline pH adjuster; and Contains acidic pH regulators, An additive composition for a semiconductor polishing process, wherein the sum of the pKa of the basic pH regulator and the pKa of the acidic pH regulator is 4 to 11 at 25°C.

18. In the 17th paragraph, further comprising a fluorinated surfactant, An additive composition for a semiconductor polishing process, wherein the pKa of the basic pH regulator is 6 to 12 at 25°C, and the pKa of the acidic pH regulator is -2 to 2 at 25°C.

19. In the 18th paragraph, the basic pH adjusting agent comprises an alcohol amine, The above acidic pH adjusting agent is an additive composition for a semiconductor polishing process containing an inorganic acid.

20. Dispersant; reducing agent; and Contains pH adjuster, An additive composition for a semiconductor polishing process having a zeta potential change rate (ZR2) expressed by the following Equation 2 of -0.1 to 0.

1. [Formula 1] ZR2 = (Z2 - Z7) / Z2 Here, after the additive composition is mixed into the polishing particle dispersion containing ceria particles to form a polishing slurry composition, Z2 is the zeta potential of the polishing slurry composition, and Z7 is the zeta potential of the polishing slurry composition after being left at a temperature of 60°C for 7 days.

21. A polishing particle dispersion comprising polishing particles; and an additive composition, The above additive composition dispersant; reducing agent; alkaline pH adjuster; First dispersion stabilizer; and An abrasive slurry composition comprising a second dispersion stabilizer comprising a nonionic stabilizer or a cationic stabilizer.

22. Step of preparing a semiconductor substrate; A step of spraying a polishing slurry composition onto the semiconductor substrate; and Comprising a step of polishing the semiconductor substrate, The above polishing slurry composition An abrasive particle dispersion comprising abrasive particles; and an additive composition, The above additive composition dispersant; reducing agent; alkaline pH adjuster; First dispersion stabilizer; and A method for manufacturing a semiconductor device comprising a second dispersion stabilizer comprising a nonionic stabilizer or a cationic stabilizer.

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