Device for crystal growth and crystal growth method

Abstract

A device for crystal growth and a crystal growth method. The device comprises a seed crystal holder, a seed crystal connecting rod, and a state detection assembly. The seed crystal holder is connected to one end of the seed crystal connecting rod, and the state detection assembly is configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects the state of the seed crystal holder relative to a melt, and the melt is used for crystal growth.

Description

Apparatus for crystal growth and method of crystal growth TECHNICAL FIELD

[0001] The present specification relates to the field of crystal growth, and in particular, to an apparatus for crystal growth and a method of crystal growth. BACKGROUND

[0002] Silicon carbide, as a semiconductor material, has very excellent physical and chemical properties, and has broad application prospects and market space in high-end optoelectronics, high-power, and microwave radio frequency fields.

[0003] In the process of silicon carbide crystal growth, the positional relationship between the seed crystal and the melt affects the quality of the generated silicon carbide crystal. If the state of the seed crystal holder relative to the melt cannot be clearly determined, it will be inconvenient to control the position of the seed crystal holder and the seed crystal arranged on the seed crystal holder, thereby being not conducive to the growth of the crystal.

[0004] Therefore, it is desirable to provide an apparatus for crystal growth and a method of crystal growth, which can detect the state of the seed crystal and ensure the quality of the generated crystal.

[0005] SUMMARY

[0006] One or more embodiments of the present specification provide an apparatus for crystal growth, comprising a seed crystal holder, a seed crystal connecting rod, and a state detection assembly, the seed crystal holder being connected to one end of the seed crystal connecting rod, and the state detection assembly being configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects a state of the seed crystal holder relative to a melt, and the melt is used for crystal growth.

[0007] In some embodiments, the seed crystal holder state comprises a tilt state, and the tilt state reflects a state in which the seed crystal holder is currently tilted relative to the melt.

[0008] In some embodiments, the tilt state comprises a tilt angle, and the tilt angle reflects an angle in which the seed crystal holder is currently tilted relative to the melt.

[0009] In some embodiments, the state detection assembly comprises a tilt detection assembly for detecting the tilt state of the seed crystal holder, and the tilt detection assembly comprises one or more of an image acquisition assembly, a laser sensing device, and a motion capture instrument.

[0010] In some embodiments, the apparatus further comprises a tilt adjustment assembly configured to adjust the tilt angle of the seed crystal holder.

[0011] In some embodiments, the device further comprises a first processor connected to the tilt adjustment assembly, the first processor configured to: obtain a target tilt angle of the seed crystal holder, the target tilt angle reflecting an angle at which the seed crystal holder should be tilted relative to the melt; determine an adjustment angle of the seed crystal holder based on the target tilt angle and the tilt angle; and control the tilt adjustment assembly to adjust the seed crystal holder based on the adjustment angle.

[0012] In some embodiments, the device further comprises a first support structure, the tilt adjustment assembly comprising at least two adjustment members, a connecting structure, and a first driving member, the other end of the seed crystal connecting rod being connected to the connecting structure; the at least two adjustment members being connected between the connecting structure and the first support structure, and being arranged in a circumferential direction of the seed crystal connecting rod; the first driving member being configured to drive at least one of the at least two adjustment members to move a corresponding position of the connecting structure, so that a corresponding position of the seed crystal connecting rod in the circumferential direction changes relative to the first support structure.

[0013] In some embodiments, the adjustment member comprises a threaded connecting member connected between the first support structure and the connecting structure; the first support structure being provided with a threaded hole matched with the threaded connecting member; and the first driving member being configured to drive the threaded connecting member to rotate around an axial direction of the threaded connecting member, so that the threaded connecting member moves in the threaded hole, thereby moving the corresponding position of the connecting structure.

[0014] In some embodiments, the tilt adjustment assembly comprises at least two spring members arranged in one-to-one correspondence with the at least two adjustment members; the at least two spring members being located between the first support structure and the connecting structure, and the at least two spring members being respectively sleeved outside the at least two threaded connecting members.

[0015] In some embodiments, the tilt adjustment assembly comprises an elastic compression member, a second driving member, and a track, the device further comprising a second support structure, the second driving member, the track, and the elastic compression member being provided on the second support structure, the second support structure being provided with a through hole through which the seed crystal connecting rod passes, the track extending along a radial direction of the seed crystal connecting rod, one end of the seed crystal connecting rod away from the seed crystal holder being connected to one end of the elastic compression member, the other end of the elastic compression member being provided on the track, the second driving member driving the other end of the elastic compression member to move along the track, so as to drive the position and / or shape of the elastic compression member to change, thereby changing the tilt state of the seed crystal connecting rod and the seed crystal holder connected to the seed crystal connecting rod.

[0016] In some embodiments, the seed holder state includes a contact state, which reflects a state of a seed adhered on the seed holder being in contact with the melt.

[0017] In some embodiments, the state detecting component includes a stress sensing piece configured to sense a stress change of the seed holder or the seed connecting rod, and determine the contact state of the seed holder; the device further includes a contact adjusting component configured to drive the seed connecting rod to move along an axial direction of the seed connecting rod, so as to adjust the contact state of the seed holder.

[0018] In some embodiments, the stress sensing piece is externally wrapped with a protective piece made of elastic material.

[0019] In some embodiments, the device further includes a contact adjusting component, one end of the stress sensing piece is connected to the contact adjusting component through a first connecting rod, and the other end of the stress sensing piece is connected to the seed connecting rod or the seed holder through a second connecting rod.

[0020] In some embodiments, the first connecting rod and the second connecting rod are made of rigid material.

[0021] In some embodiments, the device further includes a second processor, which is signal connected to the contact adjusting component, and is configured to control the movement of the seed connecting rod through the contact adjusting component based on the contact state.

[0022] In some embodiments, the device further includes a crucible for containing the melt, and the crucible further includes a barrier net arranged on an inner side wall and an inner bottom wall of the crucible.

[0023] In some embodiments, a graphite paper is arranged on the top of the barrier net, and exhaust holes are arranged on the outer edge of the graphite paper.

[0024] One of the embodiments of the present specification provides a device for crystal growth, which is characterized by comprising a seed holder, a seed connecting rod, a state adjusting component, and a processor, the seed holder is connected to one end of the seed connecting rod, the state adjusting component is configured to adjust a seed holder state of the seed holder, wherein the seed holder state reflects a state of the seed holder relative to a melt, and the melt is used for crystal growth; the processor is configured to control the state adjusting component to adjust the seed holder state of the seed holder based on the seed holder state.

[0025] In some embodiments, the seed holder state includes a tilt state and / or a contact state, the tilt state reflecting a current tilt state of the seed holder relative to the melt, and the contact state reflecting a state of a seed adhered to the seed holder being in contact with the melt.

[0026] In some embodiments, the tilt state includes a tilt angle, the tilt angle reflecting a current angle at which the seed holder is tilted relative to the melt.

[0027] In some embodiments, the state adjusting assembly includes a tilt adjusting assembly configured to adjust an angle at which the seed holder is tilted.

[0028] In some embodiments, the processor includes a first processor in signal connection with the tilt adjusting assembly, the first processor configured to: obtain a target tilt angle of the seed holder, the target tilt angle reflecting an angle at which the seed holder should be tilted relative to the melt; determine an adjustment angle of the seed holder based on the target tilt angle and the tilt angle; and control the tilt adjusting assembly to adjust the seed holder based on the adjustment angle.

[0029] In some embodiments, the state adjusting assembly includes a contact adjusting assembly configured to drive the seed connecting rod to move axially along the seed connecting rod to adjust the contact state of the seed holder.

[0030] In some embodiments, the apparatus further includes a state detecting assembly configured to detect the seed holder state of the seed holder.

[0031] One of the embodiments of the present specification provides a crystal growth method applied to the apparatus for crystal growth as described in any one of the preceding embodiments, including: adhering a seed crystal to a seed holder; obtaining a crystal growth raw material, and melting the crystal growth raw material to form a melt; controlling the seed holder to move so that the seed crystal is immersed in the melt, and a side surface of the seed crystal away from the seed holder is in contact with the melt in a tilted state; and pulling the seed holder to grow the crystal.

[0032] In some embodiments, the contact angle of the side surface of the seed crystal away from the seed holder with the melt ranges from 5 to 45 degrees.

[0033] In some embodiments, the melt is contained in a crucible, the crucible is sleeved with an induction coil, and the induction coil is connected with a power source; when the induction coil is powered on, the induction coil performs induction heating on the crucible; the method further includes: turning off the power source when the seed crystal is in contact with the surface of the melt; and starting the power source after the seed crystal is completely immersed in the melt.

[0034] In some embodiments, the method further comprises: after the seed crystal is completely immersed in the melt, making the side surface of the seed crystal away from the seed crystal holder parallel to the surface of the melt.

[0035] One of the embodiments of the present specification provides a crucible for crystal growth, the crucible is arranged in a device for crystal growth, the crucible is used to hold a melt, and the crucible further comprises a barrier net arranged on the inner side wall and the inner bottom wall of the crucible.

[0036] In some embodiments, the top of the barrier net is provided with a graphite paper, and exhaust holes are formed in the outer edge of the graphite paper.

[0037] In some embodiments, the barrier net is made of one or more of quartz, iridium gold, platinum rhodium alloy, and tantalum.

[0038] In some embodiments, the mesh number of the barrier net ranges from 20 to 40.

[0039] In some embodiments, the thickness of the barrier net ranges from 0.5 to 1.8 mm. BRIEF DESCRIPTION OF DRAWINGS

[0040] The present specification will be further illustrated in the form of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, and in these embodiments, the same numbers represent the same structures, wherein:

[0041] FIG. 1 is a structural schematic diagram of a first crystal growth device according to some embodiments of the present specification;

[0042] FIG. 2A is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0043] FIG. 2B is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0044] FIG. 3A is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0045] FIG. 3B is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0046] FIG. 3C is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0047] FIG. 4 is another structural schematic diagram of the first crystal growth device according to some embodiments of the present specification;

[0048] FIG. 5 is an exemplary flow chart illustrating a control state adjustment component adjusting a seed holder, according to some embodiments of the present specification;

[0049] FIG. 6 is an exemplary flow chart illustrating determining whether a position of a seed holder needs to be adjusted by a contact adjustment component, according to some embodiments of the present specification;

[0050] FIG. 7A is a schematic diagram illustrating a seed holder movement, according to some embodiments of the present specification;

[0051] FIG. 7B is another schematic diagram illustrating a seed holder movement, according to some embodiments of the present specification;

[0052] FIG. 8 is a structural schematic diagram of a crucible, according to some embodiments of the present specification;

[0053] FIG. 9 is another structural schematic diagram of a crucible, according to some embodiments of the present specification;

[0054] FIG. 10 is an exemplary flow chart illustrating a crystal growth method, according to some embodiments of the present specification. DETAILED DESCRIPTION

[0055] In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some examples or embodiments of the present specification, and for those skilled in the art, the present specification can also be applied to other similar scenarios without creative labor on the basis of these drawings. Unless it is clear from the language context or otherwise indicated, the same reference numbers in the drawings represent the same structures or operations.

[0056] It should be understood that the "system", "device", "unit" and / or "module" used herein is a method for distinguishing different components, elements, parts, sections or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0057] As shown in the specification and claims, unless the context clearly indicates otherwise, the words "one", "a", "an", and / or "the" do not mean to specify a single number, but also include a plurality. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0058] FIG. 1 is a structural schematic diagram of a device for crystal growth, according to some embodiments of the present specification.

[0059] FIG. 1 shows a device for crystal growth, which is referred to as a first crystal growth device 100 in the present specification for the sake of convenience.

[0060] As shown in FIG. 1, the first crystal growth device 100 can include a seed holder 110, a seed connecting rod 120, and a state detection assembly 130.

[0061] The seed holder 110 is used to fix a seed crystal. The material of the seed holder 110 can be graphite. The side of the seed holder 110 that is in contact with a melt can be provided with a seed crystal bonding surface for bonding a seed crystal. The seed crystal can be bonded on the seed crystal bonding surface of the seed holder 110 under certain conditions (e.g., vacuumizing, heating, etc.). During the crystal growth process, the seed crystal bonding surface of the seed holder 110 can be in contact with a melt in a crucible (which is referred to as a first crucible 160 in the present specification for the sake of convenience) to generate a crystal, wherein the aforementioned melt can be formed by melting the production raw material and the cosolvent required for crystal generation at a high temperature. The seed holder 110 can be provided in a columnar shape, a table shape, or other feasible shapes. More details about the first crucible 160 can be found in the relevant description below.

[0062] The seed connecting rod 120 is used to connect the seed holder 110. One end of the seed connecting rod 120 can be connected with the seed holder 110. The other end of the seed connecting rod 120 can be connected with the top wall of the first crystal growth device 100. The seed connecting rod 120 can be connected with the seed holder 110 in various ways. For example, the seed connecting rod 120 can be threadedly connected with the seed holder 110. For another example, the seed connecting rod 120 can be snap-connected with the seed holder 110.

[0063] In some embodiments, the seed connecting rod 120 can also be connected with a state adjustment assembly. More details about the state adjustment assembly can be found in the relevant description below.

[0064] In some embodiments, the seed connecting rod 120 can also be connected with a contact adjustment assembly 142. The contact adjustment assembly 142 can drive the seed connecting rod 120 to move axially along the seed connecting rod 120, thereby driving the seed holder 110 to move axially along the seed connecting rod 120. The aforementioned movement is to produce a seed crystal by the Czochralski method. By driving the seed holder 110 to move axially along the seed connecting rod 120 by the contact adjustment assembly 142, the stability of the seed crystal on the seed holder 110 during the crystal growth process can be maintained, and the defects during the crystal generation can be reduced. More details about the contact adjustment assembly 142 can be found in the relevant description below.

[0065] The state detection assembly 130 is configured to detect a seed holder state of the seed holder 110. The seed holder state refers to a state of the seed holder 110 relative to the melt. In some embodiments, the seed holder state can include a tilt state and / or a contact state, and correspondingly, the state detection assembly 130 can include a tilt detection assembly and / or a contact detection assembly. More information about the tilt state, the contact state, the tilt detection assembly, and the contact detection assembly can be found in the relevant description below.

[0066] Different seed holder states can be detected by the same or different state detection assemblies 130. More information about the state detection assembly 130 can be found in the relevant description below. For example, when the state detection assembly 130 includes an image capturing assembly, the aforementioned image capturing assembly can detect both the tilt state and the contact state of the seed holder 110. Some embodiments of the present disclosure can detect the seed holder state of the seed holder 110 by the state detection assembly 130, and can learn the state of the seed holder 110 relative to the melt, so as to adjust the state of the seed holder 110 when necessary, and to ensure the quality of the crystal generation.

[0067] The first crystal growth device 100 can further include other components.

[0068] The first crystal growth device 100 can further include a processor. The processor can be disposed in the first crystal growth device 100, or can be disposed outside the first crystal growth device 100 and in signal connection with each component of the first crystal growth device 100.

[0069] The processor can control each component of the first crystal growth device 100. For example, the processor can control the components for heating in the first crystal growth device 100. The processor can control the state detection assembly 130 to detect the seed holder state of the seed holder 110 at a preset frequency. The processor can also control the state adjustment assembly to adjust the seed holder state of the seed holder 110. In some embodiments, the processor can include a first processor and a second processor, wherein the first processor can be configured to control the tilt adjustment assembly 141 to adjust the tilt state of the seed holder 110, and the second processor can be configured to control the contact adjustment assembly 142 to adjust the contact state of the seed holder 110. The aforementioned first processor and the second processor can be the same or different components. More information about the tilt adjustment assembly 141 and the contact adjustment assembly 142 can be found in the relevant description below.

[0070] The processor can also process data and / or information obtained from components of the first crystal growth apparatus 100 or other devices. For example, the processor can obtain a seed holder state from the state detection component 130. The processor can control components of the first crystal growth apparatus 100 (e.g., the tilt adjustment component 141, the contact adjustment component 142, etc.) to execute program instructions based on these data, information, and / or processing results to perform one or more functions described in this specification. For example, the processor can determine an adjustment angle based on the seed holder state. More information about the adjustment angle can be found in the relevant description below.

[0071] In some embodiments, the first crystal growth apparatus 100 can further include a state adjustment component, which can be configured to adjust a seed holder state of the seed holder 110. For example, the state adjustment component can be configured to adjust a tilt state and / or a contact state of the seed holder 110.

[0072] In some embodiments, the state adjustment component can include a tilt adjustment component 141. The tilt adjustment component 141 can be configured to adjust a tilt state of the seed holder 110. More information about the tilt adjustment component 141 can be found in the relevant description below.

[0073] In some embodiments, the state adjustment component can include a contact adjustment component 142. The contact adjustment component 142 can be configured to drive the seed connecting rod 120 to move along its axial direction (e.g., the axial direction A shown in FIG. 3A) to adjust a contact state of the seed holder 110 disposed at one end of the seed connecting rod 120. More information about the contact adjustment component 142 can be found in the relevant description below.

[0074] Some embodiments of the present specification can achieve automatic control of the crystal generation process and ensure the quality of the crystal generation by adjusting the seed holder state of the seed holder 110 through the tilt adjustment component 141 and / or the contact adjustment component 142 as needed.

[0075] The first crystal growth apparatus 100 can further include a first crucible 160, which can contain a melt for crystal growth. The first crystal growth apparatus 100 can bring the seed crystal into sufficient contact with the melt in the first crucible 160, so that the solute can be adsorbed on the surface of the seed crystal and grow along the crystal lattice of the seed crystal to form a new crystal. The seed crystal can include a semiconductor seed crystal, such as a silicon carbide seed crystal. In some embodiments, the first crucible 160 can further include a barrier net, which is disposed on the inner side wall and the inner bottom wall of the crucible. In some embodiments, the top of the barrier net can be provided with a graphite paper, and the outer edge of the graphite paper can be provided with exhaust holes. More information about the barrier net and the graphite paper can be found in the relevant description below.

[0076] The first crystal growth device 100 can further include a vacuum furnace 150, and the aforementioned seed crystal holder 110, seed crystal connecting rod 120, and first crucible 160 can be arranged in the vacuum furnace 150.

[0077] The first crystal growth device 100 can further include an induction coil connected with a power supply, and the induction coil can perform induction heating on the first crucible 160 when the induction coil is powered on.

[0078] The following will describe how to detect and adjust the tilt state of the seed crystal holder 110.

[0079] The tilt state can reflect the current tilt state of the seed crystal holder 110 relative to the melt.

[0080] In some embodiments, the tilt state can include whether the seed crystal holder 110 is currently tilted relative to the melt. For example, the tilt state can be that the seed crystal holder 110 is tilted. It can be understood that the surface of the seed crystal bonding surface or the seed crystal on the seed crystal holder 110 is not parallel to the surface of the melt, which means that the seed crystal holder 110 is tilted, otherwise it means that the seed crystal holder 110 is not tilted.

[0081] In some embodiments, the tilt state can also include the tilt angle of the seed crystal holder 110 relative to the melt. The aforementioned tilt angle can be represented in various ways. For example, the Euler angle representation in the reference coordinate system can be used, and the aforementioned reference coordinate system can be the preset coordinate system of the first crystal growth device 100. For example, the tilt angle can be (a, b, c), where a, b, and c represent the pitch angle, yaw angle, and roll angle of the seed crystal holder 110 in the reference coordinate system, respectively. By using the Euler angle representation of the tilt angle, the size and direction of the tilt angle of the seed crystal holder 110 can be more clearly determined. For another example, the tilt angle can be the horizontal angle between the seed crystal bonding surface of the seed crystal holder 110 and the surface of the melt.

[0082] In some embodiments, when the seed crystal holder state includes the tilt state, the state detection assembly 130 can detect the tilt state of the seed crystal holder 110 through various structural arrangements, as described in detail below.

[0083] In some embodiments, the state detection assembly 130 can include one or more of an image acquisition assembly, a laser sensing device, and a motion capture instrument.

[0084] In some embodiments, the laser sensing device can include a laser emitter and a laser receiver. The laser emitter can emit a laser beam towards the seed crystal holder 110, and the laser receiver can receive the laser beam reflected by the seed crystal holder 110.

[0085] In some embodiments, the laser receiver can include a receiving unit. When the receiving unit does not receive the laser beam reflected by the seed crystal holder 110, the tilt state is characterized as the seed crystal holder 110 being tilted.

[0086] In some embodiments, the laser receiver can include a plurality of receiving units arranged at intervals. The plurality of receiving units can include a first receiving unit and one or more second receiving units. When the first receiving unit receives the laser beam reflected by the seed crystal holder 110, the tilt state is characterized as the seed crystal holder 110 being not tilted. When the second receiving unit receives the laser beam reflected by the seed crystal holder 110, the tilt state is characterized as the seed crystal holder 110 being tilted, and further, the specific tilt angle or tilt angle interval can be determined based on the specific second receiving unit that receives the laser beam. The correspondence between the second receiving unit and the specific tilt angle or tilt angle interval can be determined by pre-setting.

[0087] Some embodiments of the present specification can quickly and accurately determine the tilt state of the seed crystal holder 110 through the laser sensing device, and the laser sensing device does not need to directly contact the seed crystal holder 110 when detecting the tilt state, which can avoid affecting the crystal growth.

[0088] In some embodiments, the motion capture instrument can include a motion capture device and a plurality of reflective marker points arranged on the seed crystal holder 110. The motion capture device can capture the position information of the marker points, and identify and match the reflective marker points through an algorithm, and calculate the offset change thereof relative to the non-tilted state, thereby determining the tilt state of the seed crystal holder 110. Some embodiments of the present specification can quickly and accurately determine the tilt state of the seed crystal holder 110 through the motion capture instrument, and the detection is non-contact to avoid affecting the crystal growth.

[0089] In some embodiments, the image acquisition component can be configured to acquire an acoustic image, and correspondingly, the image acquisition component can include an acoustic imaging device. The acoustic imaging device can include an acoustic emitter, an acoustic receiver, and an acoustic imager. The acoustic emitter can emit acoustic waves, which can be ultrasonic waves or other acoustic waves. The ultrasonic emitter can control the penetration distance by controlling the frequency of the acoustic waves, thereby ensuring the measurement of the seed holder 110. The acoustic receiver can receive the transmitted acoustic waves and send them to the acoustic imager. The acoustic imager can perform acoustic imaging based on the received transmitted acoustic waves. In some embodiments, the acoustic image generated by the acoustic imaging can include an image of the seed holder 110 and the surface of the melt. In other embodiments, the acoustic image generated by the acoustic imaging can include an image of the seed holder 110, the seed connecting rod 120, the melt, and the first crucible 160. In other embodiments, the acoustic image generated by the acoustic imaging can include an image of all components within the vacuum furnace 150. Through the acoustic image generated by the acoustic imaging, the tilt angle of the seed holder 110 can be determined to facilitate precise contact between the seed holder 110 and the surface of the melt.

[0090] In some embodiments, the image acquisition component can be configured to capture an image of the inside of the first crystal growth device 100 furnace to obtain an inside furnace image. The inside furnace image can be a visual image, and correspondingly, the image acquisition component can include a visual image acquisition device (e.g., a camera). The processor can perform image recognition on the inside furnace image to determine the tilt state of the seed holder 110.

[0091] In some embodiments, the inside furnace image can include the seed holder 110 and a plurality of positioning points on the surface of the melt, the plurality of positioning points being contact points on the surface of the melt that should be in contact with the seed crystal. The plurality of positioning points can include a center positioning point, i.e., a positioning point in the plurality of positioning points that is in contact with the seed crystal located at the center position of the seed holder 110. The plurality of positioning points can be determined according to a preset. The processor can acquire the inside furnace image and perform image recognition on the inside furnace image to determine the tilt state of the seed holder 110.

[0092] In some embodiments, the processor can perform image recognition on the inside furnace image to determine a center seed bonding point on the seed holder 110 and determine whether the center seed bonding point deviates from the center positioning point on the surface of the melt. The center seed bonding point is a point at which the seed located at the center position of the seed holder 110 is bonded. When the seed on the seed holder 110 deviates from the center positioning point, the processor can determine that the seed holder 110 deviates in a certain direction, i.e., determine that the tilt state of the seed holder 110 includes a tilt.

[0093] In some embodiments, the processor can further perform image recognition on the in-furnace image to determine whether the seed crystal on the seed crystal holder 110 deviates from the plurality of positioning points, and thus determine the tilt angle of the seed crystal holder 110. The processor can perform image recognition on the in-furnace image through an angle analysis model, and the output of the angle analysis model is the tilt angle of the seed crystal holder 110. The aforementioned angle analysis model can be a convolutional neural network model, a deep learning model, or any other machine learning model that can achieve its function. The angle analysis model can be obtained by training samples. The training samples can include sample in-furnace images, which can include sample seed crystal holders and a plurality of sample positioning points, and the training labels can include the tilt angle of the sample seed crystal holder. The aforementioned training samples and training labels can be obtained by manual setting.

[0094] In some embodiments, the image acquisition assembly can be used to acquire other images to determine the tilt state of the seed crystal holder 110. For example, the image acquisition assembly can be used to acquire X-ray films, and the corresponding image acquisition assembly can further include an X-ray machine. The processor can determine the tilt state of the seed crystal holder 110 based on the X-ray films.

[0095] Some embodiments of the present specification can determine the tilt state of the seed crystal holder 110 through the aforementioned state detection assembly 130, understand the crystal growth in the first crystal growth device 100, facilitate the control of the progress of crystal growth, and ensure the quality of crystal growth.

[0096] In some embodiments, based on the tilt angle of the seed crystal holder 110, the tilt angle of the seed crystal holder 110 can be adjusted through the tilt adjustment assembly 141 to ensure the quality of crystal growth. For example, the first crystal growth device 100 can send the tilt angle of the seed crystal holder 110 to a user (e.g., the manager of the first crystal growth device 100), and the user can adjust the tilt state of the seed crystal holder 110 to the target tilt angle required in the current stage based on the received tilt angle through the tilt adjustment assembly 141. For another example, the first processor can further control the tilt adjustment assembly 141 to adjust the seed crystal holder 110 based on the tilt angle of the seed crystal holder 110.

[0097] It is worth mentioning that the target tilt angle of the seed holder 110 is different in different stages of the crystal growth process, and the target tilt angle can reflect the angle at which the seed holder 110 should be tilted relative to the melt. Similar to the tilt angle, the target tilt angle can also be expressed by Euler angles. The target tilt angle can be determined by preset. For example, when the seed holder 110 is not in contact with the melt, the target tilt angle can be a certain preset angle (for example, the contact angle between the side surface of the seed far away from the seed holder 110 and the melt is any angle in the range of 5-45°). When at least part of the seed holder 110 is in contact with the melt, the target tilt angle can be parallel to the surface of the melt (i.e., the target tilt angle is 0°). By setting different target tilt angles for the seed holder 110 at different crystal growth time periods, the seed holder 110 can be tilted to contact the surface of the melt, and when at least part of the seed holder 110 is in contact with the melt, the target tilt angle can be preset to be parallel to the surface of the melt, so that the gas bubbles in the melt are squeezed out during the process of adjusting the target tilt angle of the seed holder 110 by the tilt adjustment assembly 141 to be parallel to the surface of the melt, thereby effectively avoiding the generation of pores and improving the growth quality of the crystal.

[0098] In some embodiments, the first processor can control the tilt adjustment assembly 141 to adjust the tilt state of the seed holder 110 by the flow 500 shown in FIG. 5. The flow 500 includes the following steps:

[0099] Step 510, obtaining a target tilt angle of the seed holder.

[0100] Step 520, determining an adjustment angle of the seed holder based on the target tilt angle and the tilt angle.

[0101] In some embodiments, the first processor can determine the angle difference between the target tilt angle and the tilt angle, and determine the adjustment angle based on the aforementioned angle difference. For example, the first processor can directly determine whether the angle difference is greater than a preset difference threshold, and when the angle difference is greater than the preset difference threshold, the angle difference is determined as the adjustment angle. For another example, the first processor can determine whether the angle difference is greater than a preset difference threshold, and when the angle difference is greater than the preset difference threshold, the angle difference is determined as the adjustment angle; and when the angle difference is less than or equal to the difference threshold, the adjustment angle is determined as 0°, i.e., the seed holder 110 does not need to be adjusted, so as to avoid frequent fine adjustment affecting the stability of the crystal growth. And control the tilt adjustment assembly 141 to adjust the seed holder 110 based on the adjustment angle.

[0102] Step 530, controlling the tilt adjustment assembly to adjust the seed holder based on the adjustment angle.

[0103] The tilt adjustment assembly 141 can be provided in various configurations to meet the adjustment of the tilt state of the seed crystal holder. In some embodiments, the angle of the adjusted seed crystal holder relative to the melt is the target tilt angle. In some embodiments, the angle of the adjusted seed crystal holder relative to the melt is less than or equal to the difference threshold.

[0104] In some embodiments, the first crystal growth apparatus 100 can further include a first support structure 170, which can be used to support a plurality of components in the first crystal growth apparatus 100 (e.g., the tilt adjustment assembly 141, the seed crystal connecting rod 120, etc.). For example, as shown in FIG. 2A, the first support structure 170 can be a connecting rod, one end of which can be connected to the top wall of the vacuum furnace 150, and the other end of which can be connected to the at least two adjustment pieces 1411. The first support structure can also be other support structures. For example, the first support structure can also be the top wall of the vacuum furnace 150.

[0105] In some embodiments, as shown in FIG. 2A, the tilt adjustment assembly 141 can include the at least two adjustment pieces 1411, a connecting structure 1412, and a first driving piece 1413, the other end of the seed crystal connecting rod 120 being connected to the connecting structure 1412. The at least two adjustment pieces 1411 can be connected between the connecting structure 1412 and the first support structure 170, and the at least two adjustment pieces 1411 are arranged at intervals in the circumferential direction of the seed crystal connecting rod 120. The aforementioned first driving piece 1413 can drive at least one of the at least two adjustment pieces 1411 to move the corresponding position of the connecting structure 1412, so that the corresponding position of the seed crystal connecting rod 120 in the circumferential direction changes relative to the distance of the first support structure. The first driving piece 1413 can be a driving motor.

[0106] As shown in FIGS. 2A and 2B, the first driving piece 1413 can drive one adjustment piece 1411 to move the corresponding position of the connecting structure 1412, so that the distance of the corresponding position of the seed crystal connecting rod 120 corresponding to the adjustment piece 1411 relative to the first support structure 170 changes from the distance shown in FIG. 2A to the distance shown in FIG. 2B, while the corresponding position of the seed crystal connecting rod 120 corresponding to the other adjustment piece 1411 does not change, resulting in a change in the angle of the tilt of the seed crystal connecting rod 120 and the seed crystal holder 110 connected to the seed crystal connecting rod 120.

[0107] In some embodiments, the adjustment piece 1411 can include a threaded connection piece connected between the first support structure 170 and the connecting structure 1412; the first support structure 170 is provided with a threaded hole matched with the threaded connection piece; and the first driving piece 1413 can drive the threaded connection piece to rotate around the axial direction of the threaded connection piece, so that the threaded connection piece moves in the threaded hole, thereby driving the corresponding position of the connecting structure 1412 to move.

[0108] In some embodiments, as shown in FIG. 2A, the inclination adjustment assembly 141 can include at least two spring members 1414, which are arranged one-to-one with the at least two adjustment members 1411, are located between the first support structure 170 and the connecting structure 1412, and are respectively sleeved outside the at least two threaded connecting members. By arranging the spring members 1414 between the connecting structure 1412 and the first support structure 170, the vibration caused by the movement of the connecting structure 1412 can be reduced, so that the overall movement is more stable and comfortable, and the quality of crystal growth is ensured. At the same time, it can also avoid the collision between the connecting structure 1412 and the first support structure 170 due to the too close distance between them, and cause damage.

[0109] The user can adjust the distance between the corresponding position of the circumference of the seed crystal connecting rod 120 relative to the first support structure 170 by controlling the first driving member 1413 to adjust the movement of at least one of the at least two adjustment members 1411, thereby adjusting the inclination state of the seed crystal holder 110.

[0110] In some embodiments, the first processor can automatically determine the sub-adjustment parameter of each of the at least two adjustment members 1411 based on the adjustment angle, and control the movement of the at least adjustment member 1411 based on the sub-adjustment parameter. The sub-adjustment parameter can be a parameter for guiding the adjustment member 1411 to adjust, for example, the sub-adjustment parameter can include a movement parameter, and the aforementioned movement parameter can be a positive number or a negative number. When the sub-adjustment parameter is a positive number, it represents that the corresponding adjustment member 1411 needs to be driven to move a corresponding displacement in a direction away from the melt. When the sub-adjustment parameter is a negative number, it represents that the corresponding adjustment member 1411 needs to be driven to move a corresponding displacement in a direction away from the melt. The first processor can determine the sub-adjustment parameter of each of the at least two adjustment members 1411 based on a preset angle-parameter conversion relationship. Through the aforementioned first processor, automatic control of the movement of the adjustment member 1411 can be realized to adapt to the needs of different stages in the crystal growth process, ensure the quality of crystal growth, and reduce labor costs.

[0111] In some embodiments, the inclination adjustment assembly 141 can further include at least two third driving members (e.g., electric push rods) and a connecting structure 1412. The at least two third driving members can be connected between the connecting structure 1412 and the first support structure 170, and the at least two third driving members are arranged in a circumferential direction of the seed connecting rod 120. The first processor or a user can control the contraction or extension of the third driving members to adjust the distance of the corresponding position of the circumferential direction of the seed connecting rod 120 relative to the first support structure 170, thereby adjusting the inclination angle of the seed holder 110. In some embodiments, a heat insulating member can be arranged outside the at least two third driving members. For example, a protective cover. For another example, a water-cooled heat dissipation device. It can be understood that the temperature inside the first crystal growth device 100 is relatively high, and the temperature at the third driving member can be reduced by arranging the heat insulating member, thereby ensuring the normal operation of the third driving member. In some embodiments, the third driving member can also be arranged away from the seed holder 110, and a transmission structure is arranged on the seed connecting rod 120, one end of the transmission structure is connected with the third driving member, and the third driving member can adjust the inclination state of the seed holder 110 through the transmission structure. Similar to the adjustment member 1411, the first processor can control the contraction or extension of the at least two third driving members based on the adjustment angle.

[0112] In some embodiments, the inclination adjustment assembly 141 can include a mechanical arm. The mechanical arm can be arranged at the other end of the seed connecting rod 120, and the inclination angle of the seed holder 110 can be adjusted by adjusting the angle of the mechanical arm. The first processor or a user can control the inclination state of the seed holder 110 by the mechanical arm based on the adjustment angle.

[0113] In some embodiments, the inclination adjustment assembly 141 can further include an elastic tightening member 1415, a second driving member 1416, and a track 1417. The first crystal growth device 100 can further include a second support structure, and the elastic tightening member 1415, the second driving member 1416, and the track 1417 can be arranged on the second support structure. For example, the second support structure can be a top wall of the vacuum furnace 150. For another example, the second support structure can be other components in the first crystal growth device 100 for support. The second support structure is provided with a through hole for the seed connecting rod 120 to pass through, the track 1417 can extend in a radial direction of the seed connecting rod 120, one end of the seed connecting rod 120 away from the seed holder 110 is connected with one end of the elastic tightening member 1415, the other end of the elastic tightening member 1415 is arranged on the track 1417, the second driving member 1416 drives the other end of the elastic tightening member 1415 to move along the track 1417, so that the position and / or shape of the elastic tightening member 1415 changes, thereby driving the inclination state of the seed connecting rod 120 and the seed holder 110 connected with the seed connecting rod 120 to change.

[0114] As shown in FIG. 3A, one end of the seed crystal connecting rod 120, on which the seed crystal holder 110 is arranged, is located in the vacuum furnace 150, and the other end of the seed crystal connecting rod 120 extends out of the vacuum furnace 150 through the through hole 151 on the top of the vacuum furnace 150 and is connected to one end of the elastic shrinkage member 1415; the track 1417 is arranged on the outside of the top of the vacuum furnace 150 and extends in the radial direction of the seed crystal connecting rod 120, and the other end of the elastic shrinkage member 1415 is arranged on the track 1417 (for example, connected to a transmission belt on the track 1417), and the second driving member 1416 can drive the other end of the elastic shrinkage member 1415 to move along the track 1417, so as to change the position and / or shape of the elastic shrinkage member 1415, thereby changing the inclination state of the seed crystal connecting rod 120 and the seed crystal holder 110 connected to the seed crystal connecting rod 120. For example, when the second driving member 1416 slides along the track 1417 from the position shown in FIG. 3A to the position shown in FIG. 3B, the seed crystal holder 110 originally parallel to the surface of the melt becomes inclined to the surface of the melt. When the foregoing structure is arranged, the yield strength of the elastic shrinkage member 1415 should be as small as possible, and the tensile strength should be as high as possible, so as to reduce the abrasion when the second driving member 1416 drives the other end of the elastic shrinkage member 1415 to move. When the second driving member 1416 cooperates with the elastic shrinkage member 1415 to achieve the effect of a deflection motor, the inclination state of the seed crystal holder 110 can be controlled, and the cost can be reduced.

[0115] In some embodiments, the first processor can control the other end of the elastic shrinkage member 1415 to move through the second driving member 1416 based on the adjustment angle. For example, the first processor can determine the displacement of the other end of the elastic shrinkage member 1415 according to a preset angle-displacement relationship based on the adjustment angle, and control the other end of the elastic shrinkage member 1415 to move a corresponding distance through the second driving member 1416.

[0116] Some embodiments of the present specification can more conveniently adjust the inclination angle of the seed crystal holder 110 through the elastic shrinkage member 1415, the second driving member 1416 and the track 1417. In addition, the elastic shrinkage member 1415, the second driving member 1416 and the track 1417 are arranged outside the vacuum furnace 150, which can avoid the influence of high temperature on these structures, facilitate daily maintenance, and improve the service life.

[0117] In some embodiments, the inclination adjustment assembly 141 can include one or more structures capable of adjusting the inclination state of the aforementioned seed holder 110. For example, the inclination adjustment assembly 141 can include only a mechanical arm, by which the seed holder 110 can be inclined to the target inclination angle relative to the melt. For another example, the inclination adjustment assembly 141 can include a mechanical arm, at least two adjustment pieces 1411, a connecting structure 1412, and a first driving piece 1413, by which the seed holder 110 can be inclined to the target inclination angle relative to the melt.

[0118] Some embodiments of the present specification can automatically adjust the inclination state of the seed holder 110 by the aforementioned inclination adjustment assembly 141, which can ensure that the seed holder 110 is inclined to the target inclination angle relative to the melt at different stages of crystal growth. For example, after the completion of crystal growth, the seed holder 110 can be inclined to a certain angle (e.g., 5°-45°) relative to the melt, i.e., the target inclination angle can be a certain angle relative to the surface of the melt, thereby avoiding damage to the crystal. For another example, during crystal growth, the seed holder 110 can be parallel to the surface of the melt, i.e., the target inclination angle is 0°, which can ensure the contact between the seed and the melt and achieve normal crystal growth and improve the quality of crystal growth.

[0119] It can be understood that, during crystal growth, the seed on the seed holder 110 needs to be accurately placed on the surface of the melt and ensure good thermal and mechanical contact between the two, so as to ensure that the melt can crystallize in order on its surface and form a high-quality crystal. However, if the seed enters the melt, the seed may be dissolved, adsorb impurity ions in the melt, and the contact surface between the seed and the melt may be unstable, which can affect the normal growth of the crystal. Therefore, the contact state between the seed and the melt needs to be accurately controlled to ensure that a high-quality crystal is obtained.

[0120] The present specification will describe how to detect and adjust the contact state of the seed holder 110.

[0121] The contact state can reflect the contact state between the seed on the seed holder 110 and the melt. In some embodiments, the contact state can include that the seed is currently in contact with the melt or that the seed is currently separated from the melt. In some embodiments, the contact state can also include the time point at which the seed on the seed holder 110 starts to contact the melt, which can be referred to as the first time for the convenience of the following description. In some embodiments, the contact state can also include the time point at which the seed on the seed holder 110 starts to separate from the melt.

[0122] In some embodiments, when the seed holder state includes the contact state, the state detection assembly 130 can include a stress sensing piece.

[0123] The stress sensing piece can be used to detect the contact state of the seed crystal holder 110. In some embodiments, the stress sensing piece can be arranged on the seed crystal holder 110 and / or the seed crystal connecting rod 120. The stress sensing piece can be a resistance strain gauge, a fiber bragg grating sensor (FBG), a piezoelectric ceramic sensor, etc., which can convert the stress received into an electrical signal or other forms of energy signals. For example, the resistance strain gauge is pasted on the surface of the seed crystal holder 110 and / or the seed crystal connecting rod 120, when the seed crystal holder 110 and / or the seed crystal connecting rod 120 is deformed under stress, the resistance value of the resistance strain gauge will change accordingly, so as to determine the contact state of the seed crystal holder 110. For another example, the fiber bragg grating sensor can utilize the characteristics of the fiber bragg grating being sensitive to pressure, temperature or strain, convert the change of physical quantity into the change of light wavelength, and then obtain the stress information to determine the contact state of the seed crystal holder 110.

[0124] In some embodiments, as shown in FIG. 4, the stress sensing piece 131 can be wrapped with a protective piece 132. The protective piece 132 can prevent the stress sensing piece from being excessively pulled and deformed. The protective piece 132 can be made of elastic materials (e.g., polytetrafluoroethylene, propylene rubber, high-temperature silicone, etc.).

[0125] As shown in FIG. 4, one end of the stress sensing piece 131 can be connected with the contact adjusting assembly 142 through a first connecting rod 133, and the other end of the stress sensing piece 131 can be connected with the seed crystal connecting rod 120 through a second connecting rod 134. The contact adjusting assembly 142 can drive the seed crystal connecting rod 120 to move axially along the seed crystal connecting rod 120. When the contact state of the seed crystal holder 110 does not change, the stress on the seed crystal connecting rod 120 is constant, and the stress received by the stress sensing piece 131 is stable. When the contact state of the seed crystal holder 110 changes (e.g., when the seed crystal holder 110 is in contact with the melt), due to the surface tension of the melt, the melt will generate a reaction force on the moving seed crystal holder 110. At this time, the stress received by the stress sensing piece 131 changes, so as to determine the contact state of the seed crystal holder 110. The first connecting rod 133 and the second connecting rod 134 can be made of rigid materials (e.g., cast iron, ceramic, etc.) to facilitate stress transmission.

[0126] Some embodiments of the present specification detect the contact state by the stress sensing piece 131, which can determine the contact state of the seed crystal adhered on the seed crystal holder 110 with the melt, so as to further control the movement of the seed crystal holder 110, and protect the quality of the generated crystal. For example, the user controls the movement of the seed crystal holder 110. For another example, when the second processor obtains that the contact state of the seed crystal holder 110 changes from the seed crystal being separated from the melt to the seed crystal being in contact with the melt, the power supply can be turned off immediately, at which time the effect of the induced magnetic field on the melt disappears (the melt flow caused by the Lorentz force will cause the surface of the melt to fluctuate), and the surface of the melt becomes relatively calm. After the seed crystal on the seed crystal holder 110 is completely immersed in the melt, the second processor starts the power supply again. Since the time required between turning off and restarting the power supply is short, the melt will not solidify. The above operation helps to further eliminate the contact-induced pores and improve the quality of crystal generation.

[0127] In some embodiments, the state detection assembly 130 can further include other components. For example, the state detection assembly 130 can further include an image acquisition assembly. By image recognition on the image acquired by the image acquisition assembly, the contact state of the seed crystal holder 110 can be determined. For more information about the image acquisition assembly, please refer to the relevant description above in the present specification.

[0128] In some embodiments, the second processor can control the movement of the seed crystal connecting rod 120 through the contact adjustment assembly 142 based on the contact state of the seed crystal holder 110, so as to protect the normal growth of the seed crystal. For example, when the second processor obtains that the contact state of the seed crystal holder 110 is that the seed crystal is separated from the melt, the contact adjustment assembly 142 can be controlled to drive the seed crystal connecting rod 120 to move downward along its axial direction, so as to drive the seed crystal holder 110 arranged at one end of the seed crystal connecting rod 120 to contact the surface of the melt, thereby adjusting the contact state of the seed crystal holder 110. The adjusted contact state of the seed crystal holder 110 is that the seed crystal is in contact with the melt. For another example, when the second processor obtains that the contact state of the seed crystal holder 110 changes from the seed crystal being separated from the melt to the seed crystal being in contact with the melt, the seed crystal connecting rod 120 can be controlled to stop moving through the contact adjustment assembly 142, so as to protect the seed crystal on the seed crystal holder 110 arranged at one end of the seed crystal connecting rod 120 from being in contact with the surface of the melt, thereby avoiding the seed crystal from being too long to extend into the melt and affecting the growth of the crystal.

[0129] In some embodiments, the contact adjustment assembly 142 can include a motor, which can be arranged in the seed crystal connecting rod 120 away from the other end of the seed crystal holder 110, so as to drive the seed crystal connecting rod 120 to move along its axial direction, thereby controlling the contact state of the seed crystal holder 110.

[0130] In some embodiments, the second processor can determine whether the position of the seed holder 110 needs to be adjusted by the contact adjustment assembly 142 to ensure the quality of the crystal growth based on a flowchart 600 as shown in FIG. 6. As shown in FIG. 6, the flowchart 600 can include the following steps:

[0131] At step 610, the first time is determined based on the situation in which the stress of the seed holder and / or the seed connecting rod changes.

[0132] At step 620, the movement speed of the seed holder along the seed holder axis and the second time at which the seed holder stops moving are obtained.

[0133] The movement speed of the seed holder 110 along the seed holder 110 axis can be obtained in various ways. For example, it can be obtained by user input. For another example, a speed measuring device can be provided on the seed holder 110 or the seed connecting rod 120, and the movement speed can be obtained by measuring with the speed measuring device.

[0134] The second time at which the seed holder 110 stops moving can also be obtained in various ways. For example, it can be obtained based on the situation in which the stress of the seed holder and / or the seed connecting rod changes. For another example, it can be obtained by the speed measuring device, and when the movement speed is less than or equal to a preset speed threshold (e.g., 1 mm / s), it can be determined that the seed holder 110 stops moving.

[0135] At step 630, the depth of the seed holder into the melt is determined based on the movement speed, the first time, and the second time.

[0136] The depth can be the farthest distance between the seed holder 110 and the surface of the melt.

[0137] In some embodiments, the second processor can determine the depth of the seed holder 110 into the melt based on the movement speed, the first time, and the second time. As shown in FIG. 7A, when the seed holder 110 only moves from point A to point B along the seed holder 110 axis, the second processor can simply calculate the depth L1 of the seed holder 110 into the melt based on the movement speed, the first time, and the second time.

[0138] It can be understood that the seed crystal holder 110 can be obliquely in contact with the melt, and the seed crystal holder 110 changes the oblique angle when entering the melt along the axial direction of the seed crystal holder 110. The change of the oblique angle of the seed crystal holder 110 can cause the change of the depth of the seed crystal holder 110. As shown in FIG. 7B, at a first time, the seed crystal holder 110 is shown as seed crystal holder 110-1, at this time, the seed crystal holder 110-1 can be obliquely in contact with the melt. If the seed crystal holder 110 enters the melt along the axial direction of the seed crystal holder 110 at a certain movement speed without changing the oblique angle of the seed crystal holder 110, at a second time, the seed crystal holder 110 can be shown as seed crystal holder 110-2, and the depth of the seed crystal holder 110-2 is L2. If the seed crystal holder 110 enters the melt along the axial direction of the seed crystal holder 110 at the same movement speed without changing the oblique angle until the end of the movement, at the same second time, the seed crystal holder 110 is shown as seed crystal holder 110-2, and the depth of the seed crystal holder 110-2 is L3, L2 is different from L3.

[0139] Based on this, the second processor in some embodiments of the present specification can also obtain the first oblique angle of the seed crystal holder 110 relative to the melt at the first time and the second oblique angle of the seed crystal holder 110 relative to the melt at the second time based on the oblique detection assembly 141; determine the depth of the seed crystal holder entering the melt based on the movement speed, the first time, the second time, the first oblique angle and the second oblique angle. Based on the foregoing manner, the depth of the seed crystal holder 110 can be more accurately determined, so that the crystal growth process can be more accurately controlled, and the quality of the crystal generation can be improved. For more description of the oblique detection assembly 141, please refer to the related description above in the present specification.

[0140] At step 640, whether the position of the seed crystal holder needs to be adjusted by the contact adjustment assembly based on the depth.

[0141] For example, when the depth is greater than the preset depth threshold, the second processor or the user can adjust the position of the seed crystal holder 110 through the contact adjustment assembly 142. The depth of the adjusted seed crystal holder 110 immersed in the melt is not greater than the preset depth threshold, so as to ensure the quality of the crystal generation.

[0142] Some embodiments of the present specification can automatically adjust the contact state of the seed crystal holder 110 through the contact adjustment assembly 142, avoid the error caused by manual adjustment, so that the crystal can grow normally, and the growth quality of the crystal can be improved.

[0143] In some embodiments, the first crystal growth device 100 can only include the oblique adjustment assembly 141 or the contact adjustment assembly 142.

[0144] In some embodiments, the first crystal growth device 100 can further comprise a tilt adjustment assembly 141 and a contact adjustment assembly 142. As shown in FIG. 3C, the first crystal growth device 100 can further comprise an elastic tightening member 1415, a second driving member 1416, a track 1417, a fourth driving member 1421 and a fixing member 1422, wherein the second driving member 1416, the track 1417 and the elastic tightening member 1415 are arranged on the top of the vacuum furnace 150. The fourth driving member 1421 is arranged in the fixing member 1422, the seed crystal connecting rod 120 passes through the through hole 151 on the top of the vacuum furnace 150 and is connected with the fourth driving member 1421 through the fixing member 1422, and the fourth driving member 1421 drives the seed crystal connecting rod 120 to move along the axial direction of the seed crystal connecting rod 120, so as to control the contact state of the seed crystal holder 110. One end of the elastic tightening member 1415 can be connected with the fixing member 1422, and the other end of the elastic tightening member 1415 can be arranged on the track 1417, and the track 1417 extends along the radial direction of the seed crystal connecting rod 120. When the second driving member 1416 slides along the track 1417, the position and / or the angle of the fixing member 1422 can be changed through the elastic tightening member 1415, so as to change the tilt state of the seed crystal connecting rod 120 and the seed crystal holder 110 connected with the seed crystal connecting rod 120. Through the above structure, the tilt state and the contact state of the seed crystal holder 110 in the first crystal growth device 100 can be controlled, so as to ensure the normal growth of the crystal and improve the quality of the crystal.

[0145] The present specification also discloses a device for crystal growth, which is referred to as a second crystal growth device in the present specification for the convenience of description. The second crystal growth device can comprise a seed crystal holder, a seed crystal connecting rod, a state adjustment assembly and a processor, wherein the seed crystal holder is connected to one end of the seed crystal connecting rod, the state adjustment assembly is configured to adjust a seed crystal holder state of the seed crystal holder, the seed crystal holder state reflects a state of the seed crystal holder relative to a melt, and the melt is used for crystal growth; and the processor is configured to control the state adjustment assembly to adjust the seed crystal holder state of the seed crystal holder based on the seed crystal holder state.

[0146] In some embodiments, the seed crystal holder state comprises a tilt state and / or a contact state, the tilt state reflects a current tilt state of the seed crystal holder relative to the melt, and the contact state reflects a contact state of a seed crystal adhered to the seed crystal holder relative to the melt.

[0147] In some embodiments, the tilt state comprises a tilt angle, and the tilt angle reflects a current tilt angle of the seed crystal holder relative to the melt.

[0148] In some embodiments, the state adjustment assembly comprises a tilt adjustment assembly, the tilt adjustment assembly is arranged on the seed crystal connecting rod, and the tilt adjustment assembly is configured to adjust the tilt angle of the seed crystal holder.

[0149] In some embodiments, the processor comprises a first processor, the first processor is in signal connection with the tilt adjustment assembly, the first processor is configured to acquire a target tilt angle of the seed holder, the target tilt angle reflects an angle at which the seed holder should be tilted relative to the melt; determine an adjustment angle of the seed holder based on the target tilt angle and the tilt angle; and control the tilt adjustment assembly to adjust the seed holder based on the adjustment angle.

[0150] In some embodiments, the state adjustment assembly comprises a contact adjustment assembly, the contact adjustment assembly is configured to drive the seed connecting rod to move axially along the seed connecting rod axis to adjust the contact state of the seed holder.

[0151] In some embodiments, the second crystal growth device further comprises a state detection assembly, the state detection assembly is configured to detect a seed holder state of the seed holder.

[0152] For more information about the foregoing structure of the second crystal growth device, please refer to the relevant description of the first crystal growth device 100 in the foregoing of this specification.

[0153] This specification also discloses a crucible for crystal growth, for ease of description, the foregoing crucible for crystal growth can be referred to as a second crucible.

[0154] The second crucible is arranged in a device for crystal growth (for example, the first crystal growth device 100 and / or the second crystal growth device), and the foregoing second crucible is used to hold the melt. When the device for crystal growth is the first crystal growth device 100, the second crucible can be the first crucible 160.

[0155] It can be understood that when the device for crystal growth heats the melt in the second crucible, the melt boiling can generate bubbles, and when the bubbles diffuse to the vicinity of the seed holder, they can affect the seed crystal on the seed holder, thereby reducing the quality of crystal growth. Based on this, the second crucible 800 in this specification can be internally provided with a barrier net 810 that blocks the diffusion of bubbles. The barrier net 810 can be arranged along the inner walls of the second crucible 800, as shown in FIG. 8. In some embodiments, the inner side walls and the inner bottom wall of the second crucible 800 are both provided with the barrier net 810.

[0156] In some embodiments, the barrier net 810 can be made of a material that is resistant to high-temperature molten corrosion and has good chemical stability, so as to avoid changes in the properties of the barrier net 810 when the melt is heated. For example, the barrier net 810 can be made of one or more of quartz, iridium gold, platinum-rhodium alloy, tantalum, etc.

[0157] In some embodiments, the mesh number of the blocking net 810 can be determined by a preset. For example, the mesh number of the blocking net 810 can be preset to be 20-80. Different mesh number ranges of the blocking net 810 can be used in different crystal growth processes. For example, 20-40, 40-60, 60-80, etc. In some embodiments, the mesh number range of the blocking net 810 is 20-40. Preferably, the mesh number range of the blocking net 810 can be 25-35. For example, the mesh number of the blocking net 810 can be 30 mesh. By limiting the mesh number of the blocking net 810 as described above, the mesh number of the blocking net 810 can be prevented from being too small to affect the fluidity of the melt, and the mesh number of the blocking net 810 can also be prevented from being too large to fail to block the bubbles, thereby reducing the quality of crystal growth. In some embodiments, the thickness range of the blocking net 810 is 0.5-1.8 mm.

[0158] In different crystal growth processes, the thickness of the blocking net 810 can be different. For example, the thickness range of the blocking net 810 can include 0.5-0.8 mm, 0.8-1.2 mm, and 1.2-1.8 mm. Preferably, the thickness range of the blocking net 810 can be 0.8-1.2 mm. For example, the thickness of the blocking net 810 can be 1 mm. Some embodiments of the present specification limit the thickness of the blocking net 810 to prevent the thickness of the blocking net 810 from being too thick to affect the smoothness of the melt flow, and also to prevent the thickness of the blocking net 810 from being too thin to easily deform.

[0159] In some embodiments, as shown in FIG. 8, the minimum distance between the outer side wall of the seed crystal holder 900 used in cooperation with the second crucible 800 and the inner side wall of the second crucible 800 in the radial direction of the crucible is a second distance D2, the maximum distance between the blocking net 810 arranged on the inner side of the inner side wall of the second crucible 800 and the inner side wall of the second crucible 800 in the radial direction of the second crucible 800 is a third distance D3, and the second distance D2 is greater than the third distance D3, so as to ensure that the seed crystal holder 900 can move axially in the second crucible 800 along the second crucible 800, and avoid the collision between the seed crystal holder 900 and the blocking net 810 during the movement of the seed crystal holder 900 to affect the crystal generation process.

[0160] Some embodiments of the present specification can avoid the influence of the bubbles generated when the melt boils on the seed crystal on the seed crystal holder 900 by arranging the blocking net 810 in the second crucible 800, thereby ensuring the quality of crystal growth.

[0161] In some embodiments, as shown in FIG. 8, before starting the crystal growth, a graphite paper 820 is arranged on the top of the blocking net 810, the graphite paper 820 is above the melt, and exhaust holes 821 are arranged on the outer edge of the graphite paper 820. It is worth mentioning that during the temperature rising and material homogenizing process of the second crucible 800, the seed crystal is directly above the material surface, and part of the melt will volatilize at high temperature and easily deposit on the seed crystal growth surface of the seed crystal holder 900, forming two-dimensional nucleation, which is not conducive to the subsequent single crystal growth. In some embodiments of the present application, by arranging the graphite paper 820 with exhaust holes 821, the influence of volatilization on the seed crystal growth surface in the seed crystal holder 900 during the temperature rising and material homogenizing process can be avoided, and the quality of the generated crystal can be ensured.

[0162] In some embodiments, the diameter of the graphite paper 820 can be smaller than the inner diameter of the second crucible 800 and larger than the inner diameter of the blocking net 810, so that the graphite paper 820 can be arranged on the top of the blocking net 810 in the second crucible 800.

[0163] In some embodiments, the mesh size of the exhaust holes 821 on the graphite paper 820 ranges from 0.5 mm to 5 mm. In some embodiments, the mesh size of the exhaust holes 821 on the graphite paper 820 ranges from 0.8 mm to 3 mm. In some embodiments, the mesh size of the exhaust holes 821 on the graphite paper 820 ranges from 1 mm to 2 mm. Different mesh sizes of the graphite paper 820 can be used in different crystal growth processes. By limiting the mesh size of the exhaust holes 821 on the graphite paper 820, it can be avoided that the exhaust holes 821 are too small to discharge the volatilized melt in time, or the exhaust holes 821 are too large to limit the exhaust direction of the volatilized melt, and the volatilized melt still spreads to the seed crystal growth surface of the seed crystal holder 900, affecting the quality of the generated crystal.

[0164] In some embodiments, as shown in FIG. 8, the maximum distance between the exhaust holes 821 and the inner side wall of the second crucible 800 in the radial direction of the second crucible 800 is a first distance D1, and the first distance D1 is smaller than a second distance D2, so that the volatilized melt discharged from the exhaust holes 821 will not rise to the seed crystal growth surface of the seed crystal holder 900, affecting the quality of the generated crystal.

[0165] In some embodiments, the difference between the first distance D1 and the second distance D2 is not less than 10 mm, so that the volatilized melt discharged from the exhaust holes 821 will not spread to the seed crystal growth surface of the seed crystal holder 900, affecting the quality of the generated crystal.

[0166] In some embodiments, when starting the crystal growth, the graphite paper 820 can be removed from the second crucible 800, so that the seed crystal on the seed crystal holder 900 can be in contact with the melt and generate a crystal.

[0167] In some embodiments, as shown in FIG. 9, when starting the crystal growth, the seed crystal holder 900 can tilt the graphite paper 820 into the melt, and the graphite paper 820 can be melted in the melt, so that the graphite paper 820 can be avoided to be taken out again, and the crystal growth process can be simplified.

[0168] In some embodiments, the purity of the graphite paper 820 can be greater than 99%. In some embodiments, the purity of the graphite paper 820 can be greater than 99.5%. In some embodiments, the purity of the graphite paper 820 can be greater than 99.8%. By limiting the purity of the graphite paper 820, the purity of the material in the melt can be guaranteed, and the quality of the crystal generation can be guaranteed.

[0169] In some embodiments, the thickness of the graphite paper 820 ranges from 0.25 mm to 2.5 mm. In some embodiments, the thickness of the graphite paper 820 ranges from 0.5 mm to 2 mm. In some embodiments, the thickness of the graphite paper 820 ranges from 1 mm to 1.5 mm. By limiting the thickness of the graphite paper 820, the graphite paper 820 can be avoided to be too thick, the seed crystal on the seed crystal holder 900 can be damaged or the graphite paper 820 can be difficult to be inserted into the melt during the process of the seed crystal holder 900 inserting the graphite paper 820 into the melt, and the graphite paper 820 can be avoided to be too thin, so that the graphite paper 820 can be blown up by the updraft generated by the volatilization of the melt, or the graphite paper 820 can be deformed, so that the emission of the volatilized melt cannot be limited.

[0170] Some embodiments of the present specification can control the exhaust direction of the volatilized melt by setting the graphite paper 820 in the second crucible 800, avoid the influence of the volatilized melt on the seed crystal growth surface in the seed crystal holder 900, and guarantee the quality of the crystal generation.

[0171] The present specification also discloses a crystal growth method applied to the device for crystal growth (for example, the first crystal growth device 100 and / or the second crystal growth device) as any one of the preceding embodiments of the present specification, as shown in FIG. 10, the flow 1000 includes the following steps:

[0172] Step 1010, bonding a seed crystal on a seed crystal holder.

[0173] Step 1020, obtaining a crystal growth raw material, so that the crystal growth raw material is melted to form a melt.

[0174] Step 1030, controlling the movement of the seed crystal holder so that the seed crystal is immersed in the melt, and the surface of the seed crystal away from the seed crystal holder is in a tilted state and in contact with the melt.

[0175] Step 1040, pulling the seed crystal holder to grow the crystal.

[0176] By the above crystal growth method, the seed crystal on the seed crystal holder can be obliquely contacted with the melt, so that the bubbles in the melt can be pressed out, thereby effectively avoiding the generation of pores and improving the growth quality of the crystal.

[0177] In some embodiments, the contact angle of the side surface of the seed crystal, which is far away from the seed crystal holder, with the melt ranges from 5 to 45 degrees. The above-mentioned contact angle range can be different in different crystal growth processes. For example, the contact angle range can include 5 to 20 degrees, 20 to 30 degrees, and 30 to 40 degrees. Preferably, the contact angle range can be 20 to 30 degrees. For example, the contact angle range can be 25 degrees. If the above-mentioned contact angle is too small, it can cause the generation of bubbles in the process of too small contact. If the above-mentioned contact angle is too large, it can cause the side of the seed crystal holder, which is in contact with the melt, to move out of the melt in the process of adjusting the seed crystal holder from the state of being obliquely relative to the melt to the state of being relatively parallel. Some embodiments of the present specification can avoid the occurrence of the above-mentioned two situations by limiting the contact angle range of the side surface of the seed crystal, which is far away from the seed crystal holder, with the melt, thereby ensuring the normal progress of crystal generation.

[0178] In some embodiments, the melt is contained in a crucible (for example, the first crucible 160 or the second crucible), the crucible is sleeved with an induction coil, and the induction coil is connected with a power source; when the induction coil is powered on, the induction coil performs induction heating on the crucible; the method further includes: turning off the power source when the seed crystal contacts the surface of the melt; and starting the power source after the seed crystal is completely immersed in the melt. The contact of the seed crystal with the surface of the melt can be judged by the stress induction piece 131 to control the turning on and off of the power source. When the seed crystal contacts the surface of the melt, the action of the induction magnetic field on the melt disappears (the melt flow caused by the Lorentz force will cause the surface of the melt to fluctuate), the surface of the melt becomes relatively calm, and too many bubbles are avoided. After the seed crystal is completely immersed in the melt, the power source is started, which can ensure the normal progress of crystal growth, and because the time required between turning off and restarting the power source is short, the melt will not solidify. The above-mentioned operation helps to further eliminate the contact-induced pores and improve the quality of crystal generation.

[0179] In some embodiments, the method further includes: after the seed crystal is completely immersed in the melt, the side surface of the seed crystal, which is far away from the seed crystal holder, is parallel to the surface of the melt to ensure the normal growth of the crystal.

[0180] The above has described the basic concept, and it is obvious that the above detailed disclosure is only used as an example and does not limit the present specification. Although it is not explicitly stated here, those skilled in the art can make various modifications, improvements and corrections to the present specification. Such modifications, improvements and corrections are suggested in the present specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of the present specification.

[0181] Furthermore, this specification uses specific terms to describe embodiments thereof. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "an embodiment," "one embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Moreover, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0182] Furthermore, unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or other names described in this specification are not intended to limit the order of the processes and methods described herein. Although various examples have been discussed in the foregoing disclosure of some embodiments of the invention that are currently considered useful, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments; rather, the claims are intended to cover all modifications and equivalent combinations that conform to the spirit and scope of the embodiments described herein. For example, while the system components described above can be implemented using hardware devices, they can also be implemented solely using software solutions, such as installing the described system on existing servers or mobile devices.

[0183] Similarly, it should be noted that, in order to simplify the description disclosed herein and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of embodiments in this specification may sometimes combine multiple features into a single embodiment, drawing, or description thereof. However, this method of disclosure does not imply that the subject matter of this specification requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of a single embodiment disclosed above.

[0184] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of range in some embodiments of this specification are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0185] Each patent, patent application, patent publication, and other material cited in this specification is hereby incorporated by reference in its entirety herein for the teachings relevant to the sentence and / or paragraph in which the reference is presented. Document histories, to the extent not inconsistent with the pertinent U.S. patent application file history, are also incorporated by reference herein. To the extent that material incorporated by reference contradicts or contradicts any portion of this specification, including definition, the portion of the material incorporated by reference prevails. Note, however, that in the event of inconsistencies between any such material and the present specification, including definitions, the present specification, including definitions, will control.

[0186] Finally, it should be understood that the embodiments described herein are merely exemplary of the principles of the present description. Other embodiments can be devised without departing from the scope of the present description. Accordingly, the embodiments described herein are not intended to limit the scope of the present description, but rather are intended to be exemplary thereof.

Claims

1. An apparatus for crystal growth, characterized by, The device comprises a seed crystal holder, a seed crystal connecting rod and a state detection assembly, the seed crystal holder is connected to one end of the seed crystal connecting rod, The state detection assembly is configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects a state of the seed crystal holder relative to a melt used for crystal growth.

2. The apparatus of claim 1, wherein, The seed crystal holder state comprises a tilt state, and the tilt state reflects a current tilt state of the seed crystal holder relative to the melt.

3. The apparatus of claim 2, wherein, The tilt state comprises a tilt angle, and the tilt angle reflects a current tilt angle of the seed crystal holder relative to the melt.

4. The apparatus of claim 2 or 3, wherein, The state detection assembly comprises a tilt detection assembly for detecting the tilt state of the seed crystal holder, and the tilt detection assembly comprises one or more of an image acquisition assembly, a laser sensing device and a motion capture instrument.

5. The apparatus of claim 3, wherein, The device further comprises a tilt adjustment assembly, The tilt adjustment assembly is configured to adjust the tilt angle of the seed crystal holder.

6. The apparatus of claim 5, wherein, The device further comprises a first processor, and the first processor is in signal connection with the tilt adjustment assembly, The first processor is configured to: obtain a target tilt angle of the seed crystal holder, and the target tilt angle reflects an angle at which the seed crystal holder should be tilted relative to the melt; determine an adjustment angle of the seed crystal holder based on the target tilt angle and the tilt angle; and control the tilt adjustment assembly to adjust the seed crystal holder based on the adjustment angle.

7. The apparatus of claim 5, wherein, The device further comprises a first support structure, the tilt adjustment assembly comprises at least two adjustment members, a connecting structure and a first driving member, the other end of the seed crystal connecting rod is connected to the connecting structure, the at least two adjustment members are connected between the connecting structure and the first support structure, and the at least two adjustment members are arranged at intervals in a circumferential direction of the seed crystal connecting rod; The first driving member is configured to drive at least one of the at least two adjustment members to move a corresponding position of the connecting structure, so that a distance of a corresponding position of the seed crystal connecting rod in the circumferential direction relative to the first support structure changes.

8. The apparatus of claim 7, wherein, The adjustment member comprises a threaded connecting member connected between the first support structure and the connecting structure, the first support structure is provided with a threaded hole matched with the threaded connecting member, and the first driving member is configured to drive the threaded connecting member to rotate around an axial direction of the threaded connecting member, so that the threaded connecting member moves in the threaded hole, thereby moving the corresponding position of the connecting structure.

9. The apparatus of claim 8, wherein, The tilt adjustment assembly comprises at least two spring members, the at least two spring members are arranged in one-to-one correspondence with the at least two adjustment members, the at least two spring members are located between the first support structure and the connecting structure, and the at least two spring members are respectively sleeved outside the at least two threaded connecting members.

10. The apparatus of claim 5, wherein, The tilt adjustment assembly comprises an elastic compression member, a second driving member and a track, The device further comprises a second support structure, the second driving member, the track and the elastic compression member are arranged on the second support structure, the second support structure is provided with a through hole for the seed crystal connecting rod to pass through, the track extends along the radial direction of the seed crystal connecting rod, one end of the seed crystal connecting rod away from the seed crystal holder is connected with one end of the elastic compression member, the other end of the elastic compression member is arranged on the track, The second driving member drives the other end of the elastic compression member to move along the track, and drives the position and / or shape of the elastic compression member to change, so as to drive the seed crystal connecting rod and the seed crystal holder connected with the seed crystal connecting rod to change the inclined state.

11. The apparatus of claim 1, wherein, The seed crystal holder state includes a contact state, and the contact state reflects the state of the seed crystal bonded on the seed crystal holder being in contact with the melt.

12. The device of claim 11, wherein The state detection assembly comprises a stress sensing member configured to: sense a stress change of the seed crystal holder or the seed crystal connecting rod, and determine the contact state of the seed crystal holder; The device further comprises a contact adjusting assembly configured to: drive the seed crystal connecting rod to move along the axial direction of the seed crystal connecting rod, so as to adjust the contact state of the seed crystal holder.

13. The apparatus of claim 12, wherein, The stress sensing member is externally wrapped with a protective member made of elastic material.

14. The apparatus of claim 12, wherein, One end of the stress sensing member is connected with the contact adjusting assembly through a first connecting rod, and the other end of the stress sensing member is connected with the seed crystal connecting rod or the seed crystal holder through a second connecting rod.

15. The apparatus of claim 14, wherein, The first connecting rod and the second connecting rod are made of rigid material.

16. The apparatus of claim 12, wherein, The device further comprises a second processor connected with the contact adjusting assembly, The second processor is configured to: control the movement of the seed crystal connecting rod through the contact adjusting assembly based on the contact state.

17. The device of claim 1, further comprising a crucible for containing the melt, The crucible further comprises a barrier net arranged on the inner side wall and the inner bottom wall of the crucible.

18. The apparatus of claim 17, wherein, A graphite paper is arranged on the top of the barrier net, and exhaust holes are arranged on the outer edge of the graphite paper.

19. An apparatus for crystal growth, characterized by A seed crystal holder, a seed crystal connecting rod, a state adjusting assembly and a processor are included, The state adjusting assembly is configured to adjust a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects the state of the seed crystal holder relative to a melt used for crystal growth; The processor is configured to control the state adjusting assembly to adjust the seed crystal holder state of the seed crystal holder based on the seed crystal holder state.

20. The apparatus of claim 19, wherein, The seed crystal holder state includes an inclined state and / or a contact state, the inclined state reflects the current inclination of the seed crystal holder relative to the melt, and the contact state reflects the state of the seed crystal bonded on the seed crystal holder being in contact with the melt.

21. The apparatus of claim 20, wherein, The inclined state includes an inclination angle, and the inclination angle reflects the current inclination angle of the seed crystal holder relative to the melt.

22. The apparatus of claim 21, wherein, The state adjusting assembly comprises a tilt adjusting assembly, The tilt adjusting assembly is configured to adjust the angle of the seed crystal holder tilt.

23. The apparatus of claim 22, wherein, The processor comprises a first processor, which is in signal connection with the tilt adjusting assembly, The first processor is configured to: obtain a target tilt angle of the seed crystal holder, the target tilt angle reflecting the angle at which the seed crystal holder should be tilted relative to the melt; determine an adjustment angle of the seed crystal holder based on the target tilt angle and the tilt angle; control the tilt adjusting assembly to adjust the seed crystal holder based on the adjustment angle.

24. The apparatus of claim 20, wherein, The state adjusting assembly comprises a contact adjusting assembly, The contact adjusting assembly is configured to drive the seed crystal connecting rod to move axially along the seed crystal connecting rod to adjust the contact state of the seed crystal holder.

25. The apparatus of claim 19, wherein, The device further comprises a state detecting assembly configured to detect the seed crystal holder state of the seed crystal holder.

26. A crystal growth method applied to the device for crystal growth according to any one of claims 1-25, comprising: bonding a seed crystal on a seed crystal holder; obtaining a crystal growth raw material, and melting the crystal growth raw material to form a melt; controlling the seed crystal holder to move so that the seed crystal is immersed in the melt, and a side surface of the seed crystal away from the seed crystal holder is in contact with the melt in a tilted state; pulling the seed crystal holder to grow a crystal.

27. The method of claim 26, wherein, The contact angle between the side surface of the seed crystal away from the seed crystal holder and the melt ranges from 5 to 45 degrees.

28. The method of claim 26, wherein the melt is contained in a crucible, the crucible is sleeved with an induction coil, and the induction coil is connected with a power source; when the induction coil is powered on, the induction coil performs induction heating on the crucible. The method further comprises: turning off the power source when the seed crystal is in contact with the surface of the melt; starting the power source after the seed crystal is completely immersed in the melt.

29. The method of claim 28, further comprising: after the seed crystal is completely immersed in the melt, making the side surface of the seed crystal away from the seed crystal holder parallel to the surface of the melt.

30. A crucible for crystal growth, the crucible being arranged in a device for crystal growth, and the crucible being used to contain a melt, The crucible further comprises a barrier net arranged on the inner side wall and the inner bottom wall of the crucible.

31. The apparatus of claim 30, wherein, A graphite paper is arranged on the top of the barrier net, and exhaust holes are formed in the outer edge of the graphite paper.

32. The apparatus of claim 30, wherein, The barrier net is made of one or more of quartz, iridium gold, platinum rhodium alloy, and tantalum.

33. The apparatus of claim 30, wherein, The mesh number of the barrier net ranges from 20 to 40.

34. The apparatus of claim 30, wherein, The thickness of the barrier net ranges from 0.5 to 1.8 mm.

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