Light-emitting diode chipset, display backlight module, and lighting module

Abstract

A light-emitting diode chipset, a backlight module for a display, and a lighting module. The light-emitting diode chipset generates white light, and comprises at least one multi-wavelength chip. The multi-wavelength chip comprises an N-type semiconductor layer (103), a P-type semiconductor layer (104), and a first light-emitting layer (106a) and a second light-emitting layer (106b), which are disposed between the N-type semiconductor layer (103) and the P-type semiconductor layer (104) and are stacked, wherein the first light-emitting layer (106a) generates light of a first wavelength band by means of electroluminescence, and excites the second light-emitting layer (106b) to generate light of a second wavelength band, the number of wavelengths included in the light of the first wavelength band and the number of wavelengths included in the light of the second wavelength band both being greater than or equal to 1 and less than or equal to 10; and there is a hole blocking region between the first light-emitting layer (106a) and the second light-emitting layer (106b).

Description

Light emitting diode chip set, display backlight module and lighting module

[0001] This application claims priority to the Chinese patent application No. 202411150096.X, filed on August 20, 2024, with the Chinese Patent Office, the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application relates to the field of semiconductor technology, for example to a light emitting diode chip set, a display backlight module and a lighting module. BACKGROUND

[0003] Light emitting diodes (LEDs) are widely used in indication, display, decoration, lighting and other fields due to their energy-saving and environmentally friendly advantages. The energy consumption of white light LEDs is only 1 / 8 of that of incandescent lamps and 1 / 2 of that of fluorescent lamps. The service life of white light LEDs can be up to 100,000 hours, and they can also be mercury-free and easy to recycle, which is of great significance for environmental protection and energy saving. White light LEDs are usually obtained by covering phosphor on single-wavelength chips, which has problems such as low color rendering index, poor reliability and short service life. SUMMARY

[0004] The embodiments of the present application provide a light emitting diode chip set, a display backlight module and a lighting module, which can improve the color rendering index, color gamut, reliability and service life.

[0005] In a first aspect, the embodiments of the present application provide a light emitting diode chip set, which generates white light, comprising at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light emitting layer and a second light emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light emitting layer being located on the side of the second light emitting layer close to the P-type semiconductor layer; the first light emitting layer generates light of a first waveband in an electroluminescent manner, the light of the first waveband excites the second light emitting layer to generate light of a second waveband, the number of wavelengths contained in the light of the first waveband and the light of the second waveband is greater than or equal to 1 and less than or equal to 10; there is a hole isolation region between the first light emitting layer and the second light emitting layer.

[0006] In a second aspect, the embodiments of the present application provide a display backlight module, comprising a driving backboard and a light emitting diode chip set as described above, the light emitting diode chip set being arranged on the driving backboard and electrically connected with the driving backboard, wherein the circuit board is a printed circuit board or a driving backboard.

[0007] In a third aspect, the embodiments of the present application provide a lighting device, comprising a circuit board and the light-emitting diode chip set as described above, the light-emitting diode chip set being arranged on the circuit board and electrically connected with the circuit board, wherein the circuit board is a printed circuit board or a flexible circuit board. BRIEF DESCRIPTION OF DRAWINGS

[0008] Fig. 1 is a schematic diagram of a lamp bead according to an embodiment of the present application;

[0009] Fig. 2 is a first schematic diagram of a multi-wavelength chip according to an embodiment of the present application;

[0010] Fig. 3 is a second schematic diagram of a multi-wavelength chip according to an embodiment of the present application;

[0011] Fig. 4 is a third schematic diagram of a multi-wavelength chip according to an embodiment of the present application;

[0012] Fig. 5 is a fourth schematic diagram of a multi-wavelength chip according to an embodiment of the present application;

[0013] Fig. 6 is a fifth schematic diagram of a multi-wavelength chip according to an embodiment of the present application;

[0014] Fig. 7 is a first schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0015] Fig. 8 is a second schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0016] Fig. 9 is a third schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0017] Fig. 10 is a fourth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0018] Fig. 11 is a fifth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0019] Fig. 12 is a sixth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0020] Fig. 13 is a seventh schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0021] Fig. 14 is an eighth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0022] Fig. 15 is a ninth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0023] Fig. 16 is a tenth schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0024] Fig. 17 is an eleventh schematic diagram of a light-emitting diode chip set according to an embodiment of the present application;

[0025] FIG. 18 is a twelfth schematic view of a light emitting diode chip set in embodiments of the application;

[0026] FIG. 19 is a thirteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0027] FIG. 20 is a fourteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0028] FIG. 21 is a fifteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0029] FIG. 22 is a sixteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0030] FIG. 23 is a seventeenth schematic view of a light emitting diode chip set in embodiments of the application;

[0031] FIG. 24 is an eighteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0032] FIG. 25 is a nineteenth schematic view of a light emitting diode chip set in embodiments of the application;

[0033] FIG. 26 is a twentieth schematic view of a light emitting diode chip set in embodiments of the application;

[0034] FIG. 27 is a twenty-first schematic view of a light emitting diode chip set in embodiments of the application;

[0035] FIG. 28 is a twenty-second schematic view of a light emitting diode chip set in embodiments of the application;

[0036] FIG. 29 is a twenty-third schematic view of a light emitting diode chip set in embodiments of the application;

[0037] FIG. 30 is a first schematic view of a first layer and a second layer in embodiments of the application;

[0038] FIG. 31 is a second schematic view of a first layer and a second layer in embodiments of the application;

[0039] FIG. 32 is a third schematic view of a first layer and a second layer in embodiments of the application;

[0040] FIG. 33 is a schematic view of a quantum well in embodiments of the application;

[0041] FIG. 34 is a schematic view of a multiple quantum well in embodiments of the application;

[0042] FIG. 35 is a first structural schematic view of a multiple wavelength chip in embodiments of the application;

[0043] Fig. 36 is a second structure of the multi-wavelength chip in the embodiment of the present application;

[0044] Fig. 37 is a third structure of the multi-wavelength chip in the embodiment of the present application;

[0045] Fig. 38 is a schematic diagram of a backlight module in the embodiment of the present application;

[0046] Fig. 39 is another schematic diagram of a backlight module in the embodiment of the present application.

[0047] Legend: 101 - substrate; 102 - buffer layer; 103 - N-type electrode; 104 - N-type semiconductor layer; 105 - P-type electrode; 106a - first light-emitting layer; 106b - second light-emitting layer; 107 - P-type semiconductor layer; 108 - current spreading layer; 109 - reflective layer; 110 - first insulating layer; 111 - second insulating layer; 112 - bonding substrate; 113 - bonding layer; 114 - color conversion material; 201 - first sub-layer; 202 - second sub-layer; 203 - first hole-blocking layer; 204 - second hole-blocking layer; 205 - potential barrier layer; 206 - potential well layer; 300 - driving backplane; 301 - driving substrate; 302 - driving unit; 400 - encapsulation lens. DETAILED DESCRIPTION

[0048] The LED in the related art obtains white light in the following forms: the first form is to form white light by covering yellow phosphor on a single blue chip, which has low color rendering index, high color temperature, and lifetime and reliability problems of the yellow phosphor. The second form is to form white light by covering red phosphor and green phosphor on a single blue chip, which has complex phosphor mixing and packaging process, high cost, and lifetime and reliability problems of the green phosphor. The spectral purity of the phosphor in the above two forms is not enough, and the color gamut is low. The third form is to form white light by mixing multi-chip single-color chips and multi-color phosphor-like substances, which has high cost, complex driving mode, complex packaging process, non-uniform control, and lifetime and reliability problems of the phosphor-like substances. The fourth form is to form white light by mixing multi-chip single-color chips, which has complex driving mode, non-uniform control, and high cost.

[0049] Therefore, the light-emitting diode chip set, the display backlight module and the lighting module provided by the embodiments of the present application can form white light, and the light-emitting diode chip set comprises at least one multi-wavelength chip. The multi-wavelength chip comprises an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked together, and the first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer generates light of a first wave band in an electroluminescent manner, the light of the first wave band excites the second light-emitting layer to generate light of a second wave band, and there is a hole isolation region between the first light-emitting layer and the second light-emitting layer.

[0050] In this way, the second light-emitting layer generates light in a photoluminescent manner, and the multi-wavelength chip has both electroluminescent and photoluminescent forms, so that the spectrum of the multi-wavelength chip is stable and will not fluctuate with the change of current. The second light-emitting layer located between the N-type semiconductor layer and the P-type semiconductor layer can release stress in advance, so that the external quantum efficiency of the first light-emitting layer is improved. At the same time, the second light-emitting layer itself has good crystal quality and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer, so that the external quantum efficiency of the second light-emitting layer can also be improved, and the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiency compared with traditional LEDs.

[0051] The number of wavelengths contained in the light of the first wave band and the light of the second wave band is greater than or equal to 1 and less than or equal to 10, and the number of wavelengths and the wavelengths can be selected as needed to form white light mixed with two or more wavelengths, so that the white light closer to sunlight (daylight) can be formed, higher apparent index can be obtained in lighting, and higher color gamut can be obtained in display. And the light-emitting diode chip set can flexibly form white light, and can provide multiple white light solutions to break through the traditional white light patent blockade, and can also be designed according to different needs to make the light power ratio of the multiple wavelengths generated by the multi-wavelength chip consistent with the required light power ratio.

[0052] The light-emitting diode chip set has simple driving mode, simple packaging process and simple control mode, is convenient for cost control, and can easily obtain full-spectrum lighting spectrum. In addition, the size of the multi-wavelength chip and the light-emitting diode chip set can be flexibly adjusted to reduce cost, improve reliability and service life.

[0053] The technical solutions in the embodiments of the present application will be described below with reference to the drawings of the optional embodiments of the present application. In the drawings, the same or similar notations represent the same or similar components or components with the same or similar functions throughout. The described embodiments are part of the embodiments of the present application, rather than all the embodiments. The embodiments described below with reference to the drawings are exemplary and are intended to explain the present application, and cannot be understood as a limitation of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application. The embodiments of the present application will be described below with reference to the drawings.

[0054] In a first aspect, the embodiments of the present application provide a light emitting diode chip set, which generates white light, for example, full-spectrum white light, and can be applied in the fields of lighting, display, etc. The light emitting diode chip set is packaged to form a light-emitting diode (LED), a mini LED backlight or a surface light source, so as to simplify the packaging mode, the driving mode and the control mode.

[0055] Referring to FIG. 1, the lamp bead includes a light emitting diode chip set CG, a circuit board 300 and a packaging lens 400. The light emitting diode chip set CG is arranged on the circuit board 300, for example, the light emitting diode chip set CG is arranged on the front surface of the circuit board 300 and is welded with the corresponding pads on the front surface of the circuit board 300 or is electrically connected by conductive adhesive, and the light emitting diode chip set CG is covered with the packaging lens 400.

[0056] In some possible examples, the color temperature of the white light generated by the light emitting diode chip set is 1600-18000, the color rendering index (CRI) of the white light is 90-100, the x value in the color coordinates of the white light is greater than or equal to 0.26 and less than or equal to 0.6, and the y value is greater than or equal to 0.28 and less than or equal to 0.52. The required light emitting diode chip set CG is selected according to different applications, such as narrow half-width multi-wavelength chip MC for display backlight application to obtain a higher color gamut, and high color rendering index light emitting diode chip set CG for lighting application.

[0057] Referring to FIGS. 2 and 3, the light-emitting diode chip set includes at least one multi-chip MC, which includes an N-type semiconductor layer 104, a P-type semiconductor layer 107, and first and second light-emitting layers 106a and 106b disposed between the N-type semiconductor layer 104 and the P-type semiconductor layer 107 and stacked, the first light-emitting layer 106a being located on a side of the second light-emitting layer 106b closer to the P-type semiconductor layer 107. The first light-emitting layer 106a generates light of a first wavelength band in an electroluminescence manner, and the light of the first wavelength band excites the second light-emitting layer 106b to generate light of a second wavelength band, the light of the first wavelength band and the light of the second wavelength band each including a number of wavelengths equal to or greater than 1 and equal to or less than 10.

[0058] The light-emitting diode chip set includes one or more multi-chips (MC). The multi-chip MC can have a shape of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, or another polygon, etc. Each multi-chip MC includes an N-type semiconductor layer 104, a P-type semiconductor layer 107, a first light-emitting layer 106a, and a second light-emitting layer 106b. The first and second light-emitting layers 106a and 106b are stacked, and the first light-emitting layer 106a is located on a side of the second light-emitting layer 106b closer to the P-type semiconductor layer 107, i.e., the first light-emitting layer 106a is closer to the P-type semiconductor layer 107, and the second light-emitting layer 106b is closer to the N-type semiconductor layer 104.

[0059] Holes output by the P-type semiconductor layer 107 and electrons output by the N-type semiconductor layer 104 recombine in the first light-emitting layer 106a, so that the first light-emitting layer 106a generates light of a first wavelength band in an electroluminescence (EL) manner. The holes output by the P-type semiconductor layer 107 cannot reach the second light-emitting layer 106b, and the second light-emitting layer 106b cannot be electroluminescent. The light of the first wavelength band generated by the first light-emitting layer 106a is transmitted into the second light-emitting layer 106b, excites the second light-emitting layer 106b, so that the second light-emitting layer 106b generates light of a second wavelength band in a photoluminescence (PL) manner.

[0060] The first waveband of light can include multiple wavelengths, and the number of included wavelengths is greater than or equal to 1 and less than or equal to 10, that is, the first waveband of light includes c different wavelengths, 1≤c≤10. The second waveband of light can include multiple wavelengths, and the number of included wavelengths is greater than or equal to 1 and less than or equal to 10, that is, the second waveband of light includes d different wavelengths, 1≤d≤10. In this way, the light-emitting diode chip set exists in both electroluminescence and photoluminescence forms, and the number of wavelengths and wavelengths can be selected as needed to form white light mixed with two or more wavelengths (for example, white light mixed with four wavelengths), which is closer to sunlight and improves the performance, reliability and service life of the light-emitting diode chip set. The light power ratio can also be designed according to different needs, so that the light power ratio of the multiple wavelengths generated by the multi-wavelength chip MC is consistent with the required light power ratio.

[0061] The first waveband includes one of an ultraviolet waveband, a violet waveband, a blue waveband, a cyan waveband or a green waveband, the second waveband of light includes one of an ultraviolet waveband, a violet waveband, a blue waveband, a cyan waveband, a green waveband, a yellow waveband, a red waveband or an infrared waveband, and at least one wavelength of the light generated by the first light-emitting layer 106a is less than each wavelength of the light generated by the second light-emitting layer 106b. In this way, the light generated by the first light-emitting layer 106a can excite the second light-emitting layer 106b to emit light.

[0062] In some possible examples, the wavelength range of the ultraviolet waveband is 200nm-400nm, the wavelength range of the violet waveband is 400nm-420nm, the wavelength range of the blue waveband is 420nm-470nm, the wavelength range of the cyan waveband is 470nm-500nm, the wavelength range of the green waveband is 500nm-565nm, the wavelength range of the yellow waveband is 565nm-590nm, the wavelength range of the red waveband is 590nm-740nm, and the wavelength range of the infrared waveband is 740nm-1.7μm.

[0063] The ultraviolet waveband can be a long-wave ultraviolet waveband, a medium-wave ultraviolet waveband, or a short-wave ultraviolet waveband. The wavelength range of the long-wave ultraviolet waveband is 320nm-400nm, the wavelength range of the medium-wave ultraviolet waveband is 275nm-320nm, and the wavelength range of the short-wave ultraviolet waveband is 200nm-275nm. For ease of description and representation, the ultraviolet waveband and the violet waveband are represented by A, the blue waveband is represented by B, the cyan waveband is represented by C, the green waveband is represented by G, the yellow waveband is represented by Y, the red waveband is represented by R, and the infrared waveband is represented by I.

[0064] The light in the ultraviolet band is ultraviolet light, which is colorless. The ultraviolet light includes long-wave ultraviolet light (UVA), medium-wave ultraviolet light (UVB), and short-wave ultraviolet light (UVC). The light in the purple band is purple light, which is purple in color. The light in the blue band is blue light, which is blue in color. The light in the cyan band is cyan light, which is cyan in color. The light in the green band is green light, which is green in color. The light in the yellow band is yellow light, which is yellow in color. The light in the red band is red light, which is red in color. The light in the infrared band is infrared light, which is colorless.

[0065] The first band and the second band can be the same or different. For example, referring to FIG. 1, the first band and the second band are the same, for example, both are the blue band, i.e., the light in the first band and the light in the second band are both blue light. The light in the first band can include at least one wavelength, for example, including 430 nm and 450 nm, and the light in the second band can include at least one wavelength, for example, including 440 nm, and the multi-wavelength chip MC includes multiple wavelengths in one band.

[0066] The first band and the second band can also be different. For example, referring to FIG. 3, the first band is the ultraviolet band, and the second band is the green band, the light in the first band is ultraviolet light, and the light in the second band is green light. The light in the first band can include at least one wavelength, for example, including 230 nm and 330 nm, and the light in the second band can include at least one wavelength, for example, including 550 nm, and the multi-wavelength chip MC includes multiple wavelengths in two bands.

[0067] In order to realize white light generated by the light-emitting diode chip set, the light generated by the light-emitting diode chip set comprises at least two first complementary waveband lights, the two first complementary waveband lights are mixed to generate white light, one of the wavebands corresponding to the two first complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, and the other is located in the yellow waveband; or the light generated by the light-emitting diode chip set comprises at least three second complementary waveband lights, the three second complementary waveband lights are mixed to generate white light, one of the wavebands corresponding to the three second complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, the other is located in the green waveband, and the last one is located in the red waveband. For example, the two first complementary waveband lights are cyan waveband light and yellow waveband light respectively, and the cyan waveband light and the yellow waveband light are mixed to generate white light without other waveband light. The three second complementary waveband lights are violet waveband light, green waveband light and red waveband light respectively, and the violet waveband light, the green waveband light and the red waveband light are mixed to generate white light without other waveband light.

[0068] When the multi-waveband chip MC contains multiple wavebands, the light-emitting diode chip set in which the multi-waveband chip MC is located further comprises at least one single-waveband chip SC and / or at least one color conversion material and / or other multi-waveband chip MC, so that the light generated by the multi-waveband chip MC, the light generated by the single-waveband chip SC and / or the light after color conversion and / or the light generated by the other multi-waveband chip MC are mixed to form white light. When the multi-waveband chip MC contains two wavebands, the two wavebands can be mixed to form white light, or cooperate with at least one single-waveband chip SC and / or at least one color conversion material and / or other multi-waveband chip MC in the light-emitting diode chip set to generate white light.

[0069] In the first possible embodiment, referring to FIGS. 4 to 6, the first waveband light and the second waveband light generated by the same multi-waveband chip MC are mixed to form white light, so that each multi-waveband chip MC can independently generate white light without cooperation with other multi-waveband chip MC and / or color conversion material and / or other multi-waveband chip MC to directly emit white light. At the same time, the first waveband light and the second waveband light of the same multi-waveband chip MC are mixed in the direction perpendicular to the thickness of the chip, and the uniformity of the white light formed is better, and the performance is better.

[0070] The first waveband light and the second waveband light are two first complementary waveband lights respectively. Thus, one of the first waveband light and the second waveband light corresponds to the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, and the other corresponds to the yellow waveband, i.e., one of the first waveband light and the second waveband light is ultraviolet light, violet light, blue light or cyan light, and the other is yellow light. As shown in FIGS. 4-6, when the multi-wavelength chip MC is in the forms of AxYy, BxYy and CxYy, the multi-wavelength chip MC can independently emit white light.

[0071] In a second possible embodiment, referring to FIGS. 7-10, at least two multi-wavelength chips MC cooperate to generate white light, i.e., two or more multi-wavelength chips MC are combined to obtain white light. The light generated by the at least two multi-wavelength chips MC contains two first complementary waveband lights or three second complementary waveband lights, and the two first complementary waveband lights / three second complementary waveband lights can be mixed to form white light, and the form of other light is not limited.

[0072] In some possible implementations, the light of the two multi-wavelength chips MC contains two first complementary waveband lights, and the two first complementary waveband lights are respectively located in the two multi-wavelength chips MC. Thus, the two first complementary waveband lights are respectively located in the two multi-wavelength chips MC, and the two multi-wavelength chips MC can be mixed to generate white light. For example, referring to FIG. 7, one of the two multi-wavelength chips MC1 can be in the form of AxAy, AxBy, AxCy, AxIy, AxGy or BxRy, and the other multi-wavelength chip MC2 can be in the form of GxYy, and the two multi-wavelength chips MC cooperate to form white light.

[0073] In some possible implementations, the light of the two multi-wavelength chips MC contains two first complementary waveband lights, and the two first complementary waveband lights are respectively located in the two multi-wavelength chips MC. Thus, the two first complementary waveband lights are respectively located in the two multi-wavelength chips MC, and the two multi-wavelength chips MC can be mixed to generate white light. For example, referring to FIG. 7, one of the two multi-wavelength chips MC1 can be in the form of AxAy, AxBy, AxCy, AxIy, AxGy or BxRy, and the other multi-wavelength chip MC2 can be in the form of GxYy, and the two multi-wavelength chips MC cooperate to form white light.

[0074] There are various forms of white light in the light-emitting diode chip set CG. In the example of two multi-wavelength chips MC mixing to generate white light, one of the multi-wavelength chips MC cannot independently generate white light and needs to cooperate with another multi-wavelength chip MC to generate white light, and the multi-wavelength chip MC cooperating with it can independently generate white light, for example, refer to FIG. 11, two multi-wavelength chips MC are in the form of AxYy and GxRy, etc.

[0075] As a third possible embodiment, refer to FIG. 12 to FIG. 16, the light-emitting diode chip set CG further includes at least one single-wavelength chip SC, and each single-wavelength chip SC generates light of a single wavelength. The light generated by the single-wavelength chip SC can be one of ultraviolet light, violet light, blue light, cyan light, green light, yellow light, or red light, and the light only contains one wavelength. The at least one multi-wavelength chip MC and the at least one single-wavelength chip SC cooperate to generate white light, and the multi-wavelength chips MC and the single-wavelength chips SC can be arranged side by side or in other forms. The light of the at least one multi-wavelength chip MC and the at least one single-wavelength chip SC contains two first complementary wavebands or three second complementary wavebands, and the two first complementary wavebands / three second complementary wavebands can mix to form white light, and the form of other light is not limited.

[0076] In some possible implementations, the light of the at least one multi-wavelength chip MC and the single-wavelength chip SC contains two first complementary wavebands, one of the two first complementary wavebands is in the single-wavelength chip SC, and one of the two first complementary wavebands is in the ultraviolet waveband, the violet waveband, the blue waveband, or the cyan waveband, and the other is in the yellow waveband. In this way, the multi-wavelength chip MC and the single-wavelength chip SC mix to generate white light. For example, refer to FIG. 13, the multi-wavelength chip MC can be in the form of AxAy, AxBy, AxCy, AxIy, etc., and the single-wavelength chip SC can be in the form of Y.

[0077] In other possible implementations, the light of the at least one multi-wavelength chip MC and the at least one single-wavelength chip SC contains three second complementary wavebands. One or two of the three second complementary wavebands are in the corresponding single-wavelength chip SC. In this way, one multi-wavelength chip MC and one single-wavelength chip SC mix to generate white light, or two multi-wavelength chips MC and one single-wavelength chip SC mix to generate white light, or one multi-wavelength chip MC and two multi-wavelength chips MC mix to generate white light, which can be flexibly combined as needed to form white light.

[0078] For example, referring to FIG. 13, the multi-chip MC can be in the form of AxGy, the single-chip SC can be in the form of R, and the three can be combined to form ordinary white light. For another example, referring to FIG. 14, the multi-chip MC can be in the form of AxBy, AxAy, AxCy, AxIy, etc., the two single-chips SC1 and SC2 are in the form of G and R respectively, and the three can be combined to form ordinary white light. For still another example, referring to FIG. 15, the two multi-chips MC1 and MC2 are in the form of AxCy and BxGy respectively, and the single-chip SC is in the form of R, and the three can be combined to form full-spectrum white light.

[0079] In the above examples, the light-emitting diode chip group CG can further include multi-chips MC or single-chips SC of other arbitrary wave bands to improve the continuity of the spectrum of the white light generated by the light-emitting diode chip group CG. For example, the two multi-chips MC are in the form of AxGy and BxCy respectively, and the two single-chips SC are in the form of Y and R to form full-spectrum white light. For another example, referring to FIG. 16, the two multi-chips MC1 and MC2 are in the form of AxRy and AxCy respectively, and the three single-chips SC1, SC2 and SC3 are in the form of B, G and R respectively to form high-quality full-spectrum white light.

[0080] As a fourth possible embodiment, referring to FIG. 17, the light-emitting diode chip group CG further includes at least one color conversion material 114 disposed on the multi-chip MC, each color conversion material 114 generating light of a single wavelength. The color conversion material 114 is disposed on the light-emitting side of the multi-chip MC and covers the multi-chip MC entirely. The color conversion material 114 can convert light into red light, yellow light, green light, etc., and the light contains only one wavelength. The color conversion material 114 can be added in the encapsulation glue, disposed on the light-emitting surface of the chip during encapsulation, or formed into a film and attached to the light-emitting surface of the chip. Multiple color conversion materials 114 can be disposed on each multi-chip MC, and the multiple color conversion materials 114 can be independently added in the encapsulation glue or mixedly added in the encapsulation glue, independently formed into multiple single-color conversion films, or mixedly formed into one multi-color conversion film or multiple single-color conversion films and multiple multi-color conversion films. The color conversion material 114 can be quantum dot material or fluorescent material, and the wavelength band corresponding to the light converted by the color conversion material 114 includes blue wave band, green wave band, cyan wave band, yellow wave band, red wave band or infrared wave band. For example, the color conversion material 114 is KSF fluorescent powder (i.e., red fluorescent powder), aluminate red fluorescent powder, aluminate green fluorescent powder, europium-doped blue fluorescent powder, yellow fluorescent powder, etc.

[0081] The at least one multi-wavelength chip MC and the at least one color conversion material 114 cooperate to generate white light. The light generated by the at least one multi-wavelength chip MC and the light converted by the at least one color conversion material 114 includes two first complementary wavebands or three second complementary wavebands, which can be mixed to form white light, and the form of other light is not limited.

[0082] In some possible implementations, the light converted by the at least one multi-wavelength chip MC and the at least one color conversion material 114 includes two first complementary wavebands, one of which is generated by the color conversion material 114. In this way, the light generated by one multi-wavelength chip MC and the light converted by one color conversion material 114 can be mixed to generate white light, for example. Referring to FIG. 18, the multi-wavelength chip MC can be in the form of AxAy, AxBy, and the like, and the color conversion material 114 can be a yellow conversion material, that is, the light converted by the color conversion material 114 is yellow light.

[0083] In some possible implementations, the light converted by the at least one multi-wavelength chip MC and the at least one color conversion material 114 includes two first complementary wavebands, one of which is generated by the color conversion material 114. In this way, the light generated by one multi-wavelength chip MC and the light converted by one color conversion material 114 can be mixed to generate white light, for example. Referring to FIG. 18, the multi-wavelength chip MC can be in the form of AxAy, AxBy, and the like, and the color conversion material 114 can be a yellow conversion material, that is, the light converted by the color conversion material 114 is yellow light.

[0084] For example, referring to FIG. 19, one multi-wavelength chip MC is provided with one color conversion material 114 thereon, the first waveband of the multi-wavelength chip MC is in the blue waveband, the second waveband is in the green waveband, and the light converted by the corresponding color conversion material 114 is in the red waveband, that is, the multi-wavelength chip MC is in the form of BxGy, and the color conversion material 114 is a red conversion material to form high-quality full-spectrum white light.

[0085] For another example, referring to FIG. 20, two color conversion materials 114 are correspondingly arranged on a multi-wavelength chip MC, and the light of the multi-wavelength chip MC includes blue light. The multi-wavelength chip MC is in the form of AxBy, and the corresponding color conversion materials 114 are red conversion material and green conversion material. That is, the light generated by the multi-wavelength chip is in the blue waveband and the ultraviolet waveband, or in the blue waveband and the violet waveband, and the light converted by the color conversion material is in the red waveband and the green waveband. For another example, referring to FIG. 21, the multi-wavelength chip MC is in the form of AxGy, and the corresponding color conversion materials 114 are red conversion material and blue conversion material. That is, the light generated by the multi-wavelength chip is in the green waveband and the ultraviolet waveband, or in the green waveband and the violet waveband, and the light converted by the color conversion material is in the red waveband and the blue waveband.

[0086] For another example, referring to FIG. 22, at least one of two multi-wavelength chips MC1 and MC2 is correspondingly arranged with one color conversion material 114. The two multi-wavelength chips MC1 and MC2 are in the forms of AxBy and CxGy respectively, and the corresponding color conversion material 114 is red conversion material. The red conversion material can be arranged on the multi-wavelength chip MC1, or on the multi-wavelength chip MC2 as shown in FIG. 23, or on both the multi-wavelength chip MC1 and the multi-wavelength chip MC2. The position of the color conversion material 114 is not limited in the embodiments of the present application.

[0087] The color conversion material 114 can improve the spectral continuity of the white light formed by the light-emitting diode chip set. The color conversion material 114 can cooperate with the multi-wavelength chip MC to generate white light. The color conversion material 114 can be arranged on the multi-wavelength chip MC which can independently generate white light, or on two multi-wavelength chips MC which can generate white light, or on the multi-wavelength chip MC and the single-wavelength chip SC which can generate white light. Moreover, the color conversion material 114 can be converted into light which cooperates with the multi-wavelength chip MC / single-wavelength chip SC, or into other light.

[0088] For example, the multi-wavelength chip MC is in the form of AxYy. The green conversion material, the yellow conversion material, and the red conversion material can be arranged on the multi-wavelength chip MC. The green conversion material and the red conversion material, the yellow conversion material and the red conversion material, or the green conversion material and the yellow conversion material can be arranged on the multi-wavelength chip MC. The green conversion material, the red conversion material, and the yellow conversion material can be arranged on the multi-wavelength chip MC. For another example, the multi-wavelength chip MC is in the form of AxGy. The yellow conversion material, the red conversion material, and the green conversion material can be arranged on the multi-wavelength chip MC. The green conversion material and the red conversion material, the yellow conversion material and the red conversion material, or the green conversion material and the yellow conversion material can be arranged on the multi-wavelength chip MC. The green conversion material, the red conversion material, and the yellow conversion material can be arranged on the multi-wavelength chip MC.

[0089] For example, the multi-wavelength chip MC is in the form of AxCy, and the yellow conversion material can be disposed on the multi-wavelength chip MC, and the green conversion material and the red conversion material, the yellow conversion material and the red conversion material, the green conversion material and the yellow conversion material, or the green conversion material, the red conversion material and the yellow conversion material can also be disposed on the multi-wavelength chip MC. For another example, two multi-wavelength chips MC are in the forms of AxGy and AxRy respectively, and the green conversion material, the yellow conversion material, the red conversion material, or the green conversion material and the red conversion material, the yellow conversion material and the red conversion material, or the green and yellow conversion material, or the green conversion material, the red conversion material and the yellow conversion material can be disposed on at least one multi-wavelength chip MC.

[0090] For another example, as shown in FIGS. 24-26, one of the two multi-wavelength chips MC1 generates light in the blue and green wave bands, and the other multi-wavelength chip MC2 generates light in the blue and red wave bands, and the light converted by the color conversion material is in the red wave band, or in the green wave band, or in the red and green wave bands. That is, the multi-wavelength chip MC1 is in the form of BxGy, the multi-wavelength chip MC2 is in the form of BxRy, the color conversion material is the red conversion material, or the color conversion material is the green conversion material, or the color conversion material is the red conversion material and the green conversion material.

[0091] In a fifth possible embodiment, at least one single-wavelength chip SC and at least one color conversion material 114 are further included, each single-wavelength chip SC generates light of a single wavelength, each color conversion material 114 generates light of a single wavelength, and the color conversion material 114 is disposed on the single-wavelength chip SC and / or the multi-wavelength chip MC. The color conversion material 114 can be disposed on the single-wavelength chip SC, the multi-wavelength chip MC, or both the single-wavelength chip SC and the multi-wavelength chip MC. For example, the color conversion material 114 is disposed on all the single-wavelength chips SC and the multi-wavelength chips MC.

[0092] The color conversion materials 114 at different positions can be the same or different, for example, the green conversion material is disposed on the single-wavelength chip SC and the multi-wavelength chip MC. The light converted by the color conversion material and the light generated by the single-wavelength chip SC can be in the same wave band or in different wave bands. When they are in the same wave band, the color conversion material and the single-wavelength chip SC can enrich the wavelength of the white light and improve the continuity of the white light spectrum.

[0093] In some possible implementations, the at least one multi-chip MC, the at least one single-chip SC and the at least one color conversion material cooperate to generate white light. The light generated by the at least one multi-chip MC, the light generated by the at least one single-chip SC and the light converted by the at least one color conversion material 114 have three second complementary wavebands. The three second complementary wavebands are generated by the single-chip SC, the multi-chip MC and the color conversion material 114, respectively.

[0094] For example, referring to FIG. 27, the light generated by the multi-chip MC is in the violet waveband and the green waveband, i.e., the multi-chip MC is in the form of AxBy. The light generated by the single-chip SC is in the green waveband, i.e., the single-chip SC is in the form of G. The light converted by the color conversion material 114 is in the red waveband, i.e., the color conversion material 114 is a red conversion material. The color conversion material 114 can be arranged anywhere, for example, on the multi-chip MC.

[0095] In some possible implementations, the light generated by the at least one multi-chip MC, the light generated by the at least one single-chip SC and the light converted by the at least one color conversion material 114 have three second complementary wavebands, and two first complementary wavebands are generated by the at least one multi-chip MC. The color conversion material is arranged on the single-chip SC, and the light converted by the color conversion material and the light generated by the single-chip SC are in the same waveband.

[0096] For example, referring to FIG. 28, the light generated by the multi-chip MC is in the green waveband and the blue waveband, i.e., the multi-chip MC is in the form of BxGy. The light generated by the single-chip SC is in the red waveband, i.e., the single-chip SC is in the form of R. The color conversion material 114 is arranged on the single-chip SC, and the light converted by the color conversion material 114 is in the red waveband, i.e., the color conversion material 114 is a red conversion material, to enrich the number of wavelengths of the light in the red waveband.

[0097] For example, referring to FIG. 28, the light generated by the multi-chip MC is in the green waveband and the blue waveband, i.e., the multi-chip MC is in the form of BxGy. The light generated by the single-chip SC is in the red waveband, i.e., the single-chip SC is in the form of R. The color conversion material 114 is arranged on the single-chip SC, and the light converted by the color conversion material 114 is in the red waveband, i.e., the color conversion material 114 is a red conversion material, to enrich the number of wavelengths of the light in the red waveband.

[0098] In other possible implementations, two first complementary wavelength bands exist in the light generated by the at least one multi-wavelength chip MC, the light generated by the at least one single-wavelength chip SC, and the light converted by the at least one color conversion material 114, and one of the two first complementary wavelength bands is generated by the at least one multi-wavelength chip MC, the color conversion material is disposed on the single-wavelength chip SC, and the light converted by the color conversion material and the light generated by the single-wavelength chip SC are in the same wavelength band. One of the two first complementary wavelength bands is in the ultraviolet wavelength band, the violet wavelength band, the blue wavelength band, or the cyan wavelength band, and the other is in the yellow wavelength band.

[0099] For example, referring to FIG. 29, the light generated by the multi-wavelength chip MC is in the violet wavelength band and the green wavelength band, i.e., the multi-wavelength chip MC is in the AxGy form. The light generated by the single-wavelength chip SC is in the yellow wavelength band, i.e., the single-wavelength chip SC is in the Y form. The color conversion material 114 is disposed on the single-wavelength chip SC, and the light converted by the color conversion material 114 is in the yellow wavelength band, i.e., the color conversion material 114 is a yellow conversion material to enrich the number of wavelengths of the light in the yellow wavelength band.

[0100] In some possible implementations, the color conversion material 114 and the single-wavelength chip SC can improve the spectral continuity of the white light formed by the group of light-emitting diode chips, i.e., the color conversion material 114 and the single-wavelength chip SC can be used in cooperation with a group that independently generates white light. For example, the multi-wavelength chip MC1 is in the GxYy form, the single-wavelength chip SC is in the A form, and the color conversion material 114 is a red conversion material.

[0101] In some possible embodiments, referring to FIGS. 30 to 34, the first light-emitting layer 106a in the multi-wavelength chip MC includes at least one first sub-layer 201, and the second light-emitting layer 106b includes at least one second sub-layer 202. The at least one first sub-layer 201 and the at least one second sub-layer 202 are stacked in sequence, each first sub-layer 201 has one wavelength, and each second sub-layer 202 has one wavelength. The number of first sub-layers 201 is consistent with the number of wavelengths contained in the light in the first wavelength band, and each first sub-layer 201 emits one wavelength. The number of second sub-layers 202 is consistent with the number of wavelengths contained in the light in the second wavelength band, and each second sub-layer 202 emits one wavelength. The first sub-layers 201 and the second sub-layers 202 are formed by an epitaxy process, and each of the first sub-layers 201 and the second sub-layers 202 can be a quantum well (QW) or a multi-quantum well (MQW). As shown in FIG. 33, the quantum well includes two barrier layers 205 and one well layer 206, and as shown in FIG. 34, the multi-quantum well includes a plurality of barrier layers 205 and a plurality of well layers 206 stacked in cross.

[0102] When the first light-emitting layer 106a includes two or more first sub-layers 201, the holes generated by the P-type semiconductor layer 107 can reach all the first sub-layers 201, and all the first sub-layers 201 can electroluminesce. The light generated by the first sub-layers 201 can be emitted from each surface, thereby exciting the photoluminescence of the material of a larger wavelength, so that, except for the first sub-layer 201 of the smallest wavelength, the other first sub-layers 201 have both electroluminescence and photoluminescence. The holes in the P-type semiconductor layer 107 are difficult to transport to the second sub-layers 202, so that all the second sub-layers 202 only have photoluminescence.

[0103] In some possible examples, in the multi-wavelength chip MC, the sum of the thicknesses of the first sub-layers 201 except for the one closest to the second sub-layers 202 is less than the hole diffusion length, and the sum of the thicknesses of all the first sub-layers 201 is greater than or equal to the hole diffusion length, so that a hole isolation region is formed between the adjacent first sub-layers 201 and the second sub-layers 202, which can be an interface. As shown in FIG. 30, the thickness T1 is less than the hole diffusion length, and the thickness T2 is greater than or equal to the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 107 can reach all the first sub-layers 201, so that all the first sub-layers 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot reach all the second sub-layers 202, so that all the second sub-layers 202 cannot electroluminesce.

[0104] In some possible examples, in the multi-wavelength chip MC, a first hole blocking layer 203 is arranged between the adjacent first sub-layers 201 and the second sub-layers 202, the sum of the thicknesses of the first sub-layers 201 except for the one closest to the second sub-layers 202 is less than the hole diffusion length, and the sum of the thicknesses of the first sub-layers 201 and the first hole blocking layer 203 is greater than the hole diffusion length, so that a hole isolation region is formed between the adjacent first sub-layers 201 and the second sub-layers 202, which can be an interface. As shown in FIG. 31, the thickness T1 is less than the hole diffusion length, and the thickness T3 is greater than or equal to the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 107 can reach all the first sub-layers 201, so that all the first sub-layers 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot pass through the first hole blocking layer 203, that is, the holes generated by the P-type semiconductor layer 107 cannot reach all the second sub-layers 202, so that all the second sub-layers 202 cannot electroluminesce. The material of the first hole blocking layer 203 can be a gallium nitride material doped with silicon.

[0105] In some other possible examples, a second hole blocking layer 204 is arranged between two adjacent second sub-layers 202 to block the holes from reaching the second sub-layers 202 far away from the P-type semiconductor. The first hole blocking layer 203 can be made of silicon-doped gallium nitride. As a preferred implementation, referring to FIG. 34, a second hole blocking layer 204 is arranged between each two adjacent second sub-layers 202, and a first hole blocking layer 203 is arranged between each adjacent first sub-layer 201 and second sub-layer 202. In this way, the holes are better blocked, the second sub-layers 202 do not emit electroluminescence, the spectrum is stable, and does not fluctuate with the current.

[0106] Referring to FIGS. 35 and 36, the multi-wavelength chip MC provided by the embodiment of the present application further includes a buffer layer 102, an N-type electrode 103, a P-type electrode 105, a current spreading layer 108, a reflective layer 109, and a first insulating layer 110; the buffer layer 102 and the N-type semiconductor layer 104 are arranged in a stack, the second light-emitting layer 106b is arranged on a side of the N-type semiconductor layer 104 away from the buffer layer 102, the first light-emitting layer 106a is arranged on a side of the second light-emitting layer 106b away from the N-type semiconductor layer 104, and the P-type semiconductor layer 107 is arranged on a side of the first light-emitting layer 106a away from the buffer layer 102; the current spreading layer 108 is in contact with a side of the P-type semiconductor layer 107 away from the buffer layer 102, the N-type electrode 103 is in contact with the N-type semiconductor layer 104, and the P-type electrode 105 is in contact with both the P-type semiconductor layer 107 and the current spreading layer 108; the first insulating layer 110 is arranged on a side of the current spreading layer 108 away from the buffer layer 102; the reflective layer 109 is arranged on a side of the buffer layer 102 away from the first insulating layer 110, or the reflective layer 109 is arranged on a side of the first insulating layer 110 away from the buffer layer 102, and a second insulating layer 111 is further arranged on a side of the reflective layer 109 away from the buffer layer 102.

[0107] The N-type semiconductor layer 104 is arranged on a side surface of the buffer layer 102, the second light-emitting layer 106b is arranged on a surface of the N-type semiconductor layer 104 away from the buffer layer 102, the first light-emitting layer 106a is arranged on a surface of the second light-emitting layer 106b away from the buffer layer 102, and the P-type semiconductor layer 107 is arranged on a surface of the first light-emitting layer 106a away from the buffer layer 102. The N-type semiconductor layer 104 is further in contact with the N-type electrode 103, and the P-type semiconductor layer 107 is in contact with the P-type electrode 105. In a powered state, an electric field is formed between the N-type electrode 103 and the P-type electrode 105. The first insulating layer 110 is arranged on a side of the P-type semiconductor layer 107 away from the buffer layer 102, and can be in contact with the P-type semiconductor layer 107, or other film layers such as the current spreading layer 108 can be arranged between the P-type semiconductor layer 107 and the first insulating layer 110.

[0108] Optionally, referring to FIG. 35, the reflective layer 109 is disposed on the side of the buffer layer 102 facing away from the first insulating layer 110, so that the light emission direction of the multi-wavelength chip MC is toward the direction away from the buffer layer 102. Optionally, referring to FIG. 36, the reflective layer 109 is disposed on the side of the first insulating layer 110 facing away from the buffer layer 102, and a second insulating layer 111 is further disposed on the side of the reflective layer 109 facing away from the buffer layer 102. In this way, the light emission direction of the multi-wavelength chip MC is toward the direction of the buffer layer 102, i.e., the downward arrow direction shown in FIG. 36.

[0109] The material of the buffer layer 102 can be one or more of gallium nitride, aluminum gallium nitride, and aluminum indium gallium nitride, and the thickness of the buffer layer 102 can be 10-40 nanometers. The material of the N-type semiconductor layer 104 can be N-type doped gallium nitride, and the material of the P-type semiconductor layer 107 can be P-type doped gallium nitride. The material of the first insulating layer 110 can be silicon oxide or silicon nitride. The material of the current spreading layer 108 can be transparent conductive material (indium tin oxide, ITO) or silver, etc., which can improve the distribution ability of the P-type electrode 105 and make the holes as uniformly distributed as possible in the region where the P-type semiconductor layer 107 is located.

[0110] Referring to FIG. 35, on the basis of the multi-wavelength chip MC described above, the multi-wavelength chip MC further includes a substrate 101 disposed on the side of the buffer layer 102 facing away from the first insulating layer 110. The material of the substrate 101 can be one or more of sapphire, gallium nitride, aluminum nitride, silicon, and silicon carbide. When the reflective layer 109 is disposed on the side of the buffer layer 102 facing away from the first insulating layer 110, the reflective layer 109 is disposed on the side of the substrate 101 facing away from the buffer layer 102. The light emission direction of FIG. 35 is the upward arrow direction in the figure, forming a multi-wavelength chip MC in a normal structure, and the light emission direction of FIG. 36 is the downward arrow direction in the figure, forming a multi-wavelength chip MC in a flip structure.

[0111] In the above examples, as shown in FIGS. 35 and 36, the P-type electrode 105 also includes a pad directly contacting the P-type semiconductor layer 107, and the remaining P-type electrodes 105 at least partially contact the current spreading layer 108, e.g., the remaining P-type electrodes 105 directly contact the current spreading layer 108. Similarly, the N-type electrode 103 also includes a pad directly contacting the N-type semiconductor layer 104.

[0112] Referring to FIG. 37, the multi-wavelength chip MC can further include a bonding substrate 112, a bonding layer 113, an N-type electrode 103, a P-type electrode 105, a reflective layer 109, and a first insulating layer 110; the bonding substrate 112 and the bonding layer 113 are sequentially arranged on the P-type electrode 105, the P-type semiconductor layer 107 is arranged on a side of the bonding layer 113 away from the bonding substrate 112 and in contact with the bonding layer 113; the first light-emitting layer 106a is arranged on a side of the P-type semiconductor layer 107 away from the bonding substrate 112, the second light-emitting layer 106b is arranged on a side of the first light-emitting layer 106a away from the bonding substrate 112, the N-type semiconductor layer 104 is arranged on a side of the light-emitting layer away from the bonding substrate 112, and the N-type electrode 103 contacts a side of the N-type semiconductor layer 104 away from the bonding substrate 112; the first insulating layer 110 is arranged on a side of the N-type semiconductor layer 104 away from the bonding substrate 112, and the N-type electrode 103 contacts both the N-type semiconductor layer 104 and the first insulating layer 110. The reflective layer 109 is arranged on a side of the P-type semiconductor layer 107 close to the bonding substrate 112. The multi-wavelength chip MC forms a multi-wavelength chip MC of a vertical structure, and the light-emitting direction of the multi-wavelength chip MC can be the upward direction indicated by the arrow in FIG. 37.

[0113] Referring to FIGS. 38 and 39, the present application also provides a display backlight module, which includes a circuit board and the above-mentioned LED chip group. The circuit board can be a printed circuit board (PCB) or a driving backplane. The LED chip group is arranged on the circuit board and electrically connected to the circuit board. The LED chip group can be packaged before being connected to the circuit board, or can be connected to the circuit board and then packaged. The display backlight module has a wider color gamut, can improve reliability and service life, and reduce costs.

[0114] As an implementable embodiment, a plurality of LED chip groups can be arranged on the circuit board in an array. The circuit board can provide driving current for the plurality of LED chip groups, thereby driving the plurality of LED chip groups to emit light. As shown in FIG. 38, the LED chip group CG1, the LED chip group CG2, the LED chip group CG3, and the LED chip group CG4 are arranged on the circuit board 300. In some examples, there can be 5, 6, or more LED chip groups. The number of LED chip groups can be adjusted, and the present application is not limited in this regard.

[0115] As another possible implementation, the circuit board 300 includes a driving substrate 301 and a plurality of driving units 302, one driving unit 302 corresponding to at least one group of light emitting diode chips and electrically connected thereto, and the plurality of driving units 302 are all electrically connected to the driving substrate 301. The driving unit 302 and the driving substrate 301 can also be a thin film transistor (TFT) and a complementary metal oxide semiconductor (CMOS). As shown in FIG. 39, the group of light emitting diode chips CG1 and the group of light emitting diode chips CG2 are electrically connected to one driving unit 302, the group of light emitting diode chips CG3 and the group of light emitting diode chips CG4 are electrically connected to another driving unit 302, and the two driving units 302 are both electrically connected to the driving substrate 301. The number of driving units 302 and the number of groups of light emitting diode chips connected to each driving unit 302 can be adjusted, and the present embodiment is not limited thereto.

[0116] The present embodiment also provides a lighting device, which includes a circuit board and the above-mentioned group of light emitting diode chips, the group of light emitting diode chips being arranged on the circuit board and electrically connected thereto. The lighting device can be a lamp, such as a street lamp, a decorative lamp, etc., and the circuit board can be a printed circuit board (PCB) or a flexible printed circuit (FPC).

[0117] A plurality of groups of light emitting diode chips can be arranged on the circuit board in an array, and the circuit board drives the plurality of groups of light emitting diode chips to emit light. The lighting device can obtain a higher color rendering index, a wider color gamut, and full-spectrum illumination light, can improve reliability and service life, and can reduce costs.

[0118] In the description of the embodiments of the present application, unless specifically defined and limited otherwise, the terms "mounting", "connected", "connecting" should be understood broadly, for example, can be fixedly connected, can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. The terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specified.

[0119] The terms "first", "second", "third", "fourth" and the like used in the description and claims of the present application and the above-described drawings, if any, are used to distinguish similar objects and are not necessarily used to describe a particular sequential or chronological order. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but can include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

Claims

1. A light emitting diode chip set generating white light, comprising at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light emitting layer and a second light emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light emitting layer being located on a side of the second light emitting layer close to the P-type semiconductor layer; the first light emitting layer generating light rays of a first waveband in an electroluminescent manner, the light rays of the first waveband exciting the second light emitting layer to generate light rays of a second waveband, the light rays of the first waveband and the light rays of the second waveband each containing a number of wavelengths greater than or equal to 1 and less than or equal to 10; a hole isolation region being present between the first light emitting layer and the second light emitting layer.

2. The light emitting diode chip set of claim 1, wherein, the first waveband comprising one of an ultraviolet waveband, a violet waveband, a blue waveband, a cyan waveband, or a green waveband, the second waveband comprising one of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband, the green waveband, a yellow waveband, a red waveband, or an infrared waveband, and at least one wavelength of the light rays generated by the first light emitting layer being less than each wavelength of the light rays generated by the second light emitting layer.

3. The light emitting diode chip set of claim 1, wherein, the light rays generated by the light emitting diode chip set comprising at least two first complementary waveband lights, the two first complementary waveband lights mixing to form the white light, one of the wavebands corresponding to the two first complementary waveband lights being located in an ultraviolet waveband, a violet waveband, a blue waveband, or a cyan waveband, and the other being located in a yellow waveband; alternatively, the light rays generated by the light emitting diode chip set comprising at least three second complementary waveband lights, the three second complementary waveband lights mixing to form the white light, one of the wavebands corresponding to the three second complementary waveband lights being located in an ultraviolet waveband, a violet waveband, a blue waveband, or a cyan waveband, the other being located in a green waveband, and the last one being located in a red waveband.

4. The light emitting diode chip set of claim 1, wherein, the light rays of the first waveband and the light rays of the second waveband generated by the same multi-wavelength chip mixing to form the white light.

5. The light emitting diode chip set of claim 1, wherein, at least two multi-wavelength chips cooperating to generate the white light.

6. The light emitting diode chip set of claim 5, wherein, one of the two multi-wavelength chips generating light rays in a blue waveband and a green waveband, and the other generating light rays in the blue waveband and a red waveband.

7. The light emitting diode chip set of claim 1, further comprising at least one single-wavelength chip, each of the single-wavelength chips generating light rays of a single wavelength; at least one of the multi-wavelength chips and at least one of the single-wavelength chips cooperating to generate the white light.

8. The light emitting diode chip set of claim 1, further comprising at least one color conversion material disposed on the multi-wavelength chip, each of the color conversion materials generating light rays of a single wavelength; at least one of the multi-wavelength chips and at least one of the color conversion materials cooperating to generate the white light.

9. The light emitting diode chip set of claim 8, wherein, One of the multi-wavelength chips is provided with one of the color conversion materials, the first wavelength band and the second wavelength band of the multi-wavelength chip are blue band and green band respectively, and the light converted by the corresponding color conversion material is in red band.

10. The light emitting diode chip set of claim 8, wherein, One of the multi-wavelength chips generates light in blue band and green band, and the other multi-wavelength chip generates light in blue band and red band, and the light converted by the color conversion material is in red band. Alternatively, one of the multi-wavelength chips generates light in blue band and green band, and the other multi-wavelength chip generates light in blue band and red band, and the light converted by the color conversion material is in green band. Alternatively, one of the multi-wavelength chips generates light in blue band and green band, and the other multi-wavelength chip generates light in blue band and red band, and the light converted by the two color conversion materials is in green band and red band respectively.

11. The light emitting diode chip set of claim 8, wherein, The multi-wavelength chip generates light in violet band and blue band, and the light converted by the color conversion material is in red band and green band. Alternatively, the multi-wavelength chip generates light in ultraviolet band and blue band, and the light converted by the color conversion material is in red band and green band. Alternatively, the multi-wavelength chip generates light in violet band and green band, and the light converted by the color conversion material is in red band and blue band. Alternatively, the multi-wavelength chip generates light in ultraviolet band and green band, and the light converted by the color conversion material is in red band and blue band.

12. The light emitting diode chip set according to claim 1, further comprising at least one single-wavelength chip and at least one color conversion material, each of the single-wavelength chips generates light in a single wavelength, each of the color conversion materials generates light in a single wavelength, and the color conversion material is arranged on at least one of the single-wavelength chip and the multi-wavelength chip. The at least one multi-wavelength chip, the at least one single-wavelength chip and the at least one color conversion material cooperate to generate the white light.

13. The light emitting diode chip set of any of claims 9-12, wherein, The color conversion material comprises quantum dot material or fluorescent material, and the light converted by the color conversion material is in blue band, green band, cyan band, yellow band, red band or infrared band.

14. The light emitting diode chip set of any of claims 1-12, wherein, The color temperature of the white light is 1600-18000, the color rendering index of the white light is 90-100, the x value in the color coordinates of the white light is greater than or equal to 0.26 and less than or equal to 0.6, and the y value is greater than or equal to 0.28 and less than or equal to 0.

52.

15. The light emitting diode chip set of any of claims 1-12, wherein, The first light-emitting layer in the multi-wavelength chip comprises at least one first sub-layer, and the second light-emitting layer comprises at least one second sub-layer, the at least one first sub-layer and the at least one second sub-layer are stacked in sequence, the at least one first sub-layer respectively has one of the wavelengths, and the at least one second sub-layer respectively has one of the wavelengths.

16. The light emitting diode chip set of claim 15, wherein, The sum of the thicknesses of the first sub-layers other than one first sub-layer close to the second sub-layer is less than a hole diffusion length, and the sum of the thicknesses of the at least one first sub-layer is greater than or equal to the hole diffusion length, so as to form the hole isolation region.

17. The light emitting diode chip set of claim 16, wherein, A first hole barrier layer is arranged between adjacent first sub-layers and second sub-layers in the multi-wavelength chip, the sum of the thicknesses of the first sub-layers other than one first sub-layer close to the second sub-layer is less than a hole diffusion length, and the sum of the thicknesses of the at least one first sub-layer and the first hole barrier layer is greater than or equal to the hole diffusion length, so as to form the hole isolation region. Or, a second hole barrier layer is arranged between two adjacent second sub-layers. Or, a first hole barrier layer is arranged between adjacent first sub-layers and second sub-layers in the multi-wavelength chip, the sum of the thicknesses of the first sub-layers other than one first sub-layer close to the second sub-layer is less than a hole diffusion length, and the sum of the thicknesses of the at least one first sub-layer and the first hole barrier layer is greater than or equal to the hole diffusion length, so as to form the hole isolation region; and a second hole barrier layer is arranged between at least part of two adjacent second sub-layers.

18. The light emitting diode chip set of any of claims 1-12, wherein, The multi-wavelength chip further comprises a buffer layer, an N-type electrode, a P-type electrode, a current spreading layer, a reflective layer and a first insulating layer. The buffer layer and the N-type semiconductor layer are stacked, the second light-emitting layer is arranged on a side of the N-type semiconductor layer away from the buffer layer, the first light-emitting layer is arranged on a side of the second light-emitting layer away from the N-type semiconductor layer, and the P-type semiconductor layer is arranged on a side of the first light-emitting layer away from the buffer layer. The current spreading layer is in contact with a side of the P-type semiconductor layer away from the buffer layer, the N-type electrode is in contact with the N-type semiconductor layer, and the P-type electrode is in contact with both the P-type semiconductor layer and the current spreading layer. The first insulating layer is arranged on a side of the current spreading layer away from the buffer layer. The reflective layer is arranged on a side of the buffer layer away from the first insulating layer, or the reflective layer is arranged on a side of the first insulating layer away from the buffer layer, and a second insulating layer is further arranged on a side of the reflective layer away from the buffer layer.

19. The light emitting diode chip set of claim 18, wherein, The multi-wavelength chip further comprises a substrate, and the substrate is arranged on a side of the buffer layer away from the first insulating layer. When the reflective layer is arranged on a side of the buffer layer away from the first insulating layer, the reflective layer is arranged on a side of the substrate away from the buffer layer.

20. The light emitting diode chip set of any of claims 1-12, wherein, The multi-wavelength chip further comprises a bonding substrate, a bonding layer, an N-type electrode, a P-type electrode, a reflective layer and a first insulating layer. The bonding substrate and the binding layer are sequentially arranged on the P-type electrode, the P-type semiconductor layer is arranged on the side of the binding layer away from the bonding substrate and is in contact with the binding layer; The first light-emitting layer is arranged on the side of the P-type semiconductor layer away from the bonding substrate, the second light-emitting layer is arranged on the side of the first light-emitting layer away from the bonding substrate, the N-type semiconductor layer is arranged on the side of the second light-emitting layer away from the bonding substrate, the first insulating layer is arranged on the side of the N-type semiconductor layer away from the bonding substrate, and the N-type electrode is in contact with the N-type semiconductor layer and the first insulating layer; The reflective layer is arranged on the side of the P-type semiconductor layer close to the bonding substrate.

21. A display backlight module comprising a driving backplane and the light emitting diode chip set according to any one of claims 1-20, the light emitting diode chip set is disposed on the driving backplane and electrically connected with the driving backplane, wherein, The circuit board is a printed circuit board (PCB) or a driving backboard.

22. A lighting device comprising a circuit board and a light emitting diode chip set as claimed in any one of claims 1-20, the light emitting diode chip set being arranged on the circuit board and electrically connected to the circuit board, wherein, The circuit board is a printed circuit board (PCB) or a flexible circuit board (FPC).

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