Lateral epitaxy-based laser and fabrication method therefor

Abstract

A lateral epitaxy-based laser and a fabrication method therefor. The fabrication method comprises: growing a buffer layer (2) on a substrate (1); etching the buffer layer (2) to form a plurality of first mesa structures (21); growing an N‑GaAs layer (3); removing the N‑GaAs layer (3) on the surfaces of the first mesa structures (21) to form second mesa structures (31); growing a quantum well structure (4); removing the quantum well structure (4) on the surfaces of the second mesa structures (31) to form third mesa structures (41); growing a P‑GaAs layer (5); removing the P‑GaAs layer (5) on the surfaces of the third mesa structures (41) to form fourth mesa structures (51); removing the first mesa structures (21) and fabricating an N-metal electrode (7); and fabricating a P-metal electrode (9) to obtain a lateral epitaxy-based laser. The fabrication method replaces an etching technique with epitaxial growth to convert a vertical structure into a lateral structure, thereby effectively reducing process complexity while improving fabrication uniformity and production yield.

Description

A laser based on lateral epitaxy and its fabrication method Technical Field

[0001] This application relates to the field of laser fabrication technology, and in particular to a laser based on lateral epitaxy and its fabrication method. Background Technology

[0002] Semiconductor lasers, with their advantages of high photoelectric conversion efficiency, small size, long lifespan, and ease of integration, have shown broad application prospects in many fields. In particular, semiconductor lasers are playing an increasingly important role in materials processing, medical equipment, optical communication, sensing technology, and national defense security.

[0003] Traditional fabrication typically involves etching processes. Lasers employ wide stripe structures and deep etching to suppress current diffusion, but this also increases the lateral effective refractive index difference, leading to the generation of more transverse modes. Increased operating current causes self-heating effects, further increasing the number of transverse modes. Furthermore, lateral diffusion of injected carriers results in non-uniform gain or loss distribution, especially at mesa edges, leading to the dominance of higher-order transverse modes and higher optical power. This makes traditional etching processes complex, requires high precision, and is costly to manufacture, and the uniformity of the fabricated laser cannot be guaranteed.

[0004] Therefore, there is an urgent need for a preparation method that can guarantee the uniformity of laser performance, and is simple, easy to implement, and low in cost. Summary of the Invention

[0005] This application provides a laser based on lateral epitaxy and its fabrication method to solve the technical problems of not being able to guarantee uniform performance and the method being relatively complex and costly during laser fabrication.

[0006] The first aspect of this application provides a method for fabricating a lateral epitaxial laser, comprising: growing a buffer layer on a substrate; etching the buffer layer to form multiple first mesa structures; wherein the first mesa structures are columnar and their height is less than the height of the buffer layer; growing an N-GaAs layer; wherein the N-GaAs layer covers the surface of the first mesa structures, the sidewalls of the first mesa structures, and the surface of the buffer layer between any two adjacent first mesa structures; removing the N-GaAs layer from the surface of the first mesa structures to form a second mesa structure; wherein the surface of the N-GaAs layer on the sidewall of the removed first mesa structure is at the same horizontal plane as the surface of the first mesa structure; growing a quantum well structure; wherein the quantum well structure covers the surface of the second mesa structure, the sidewalls of the second mesa structure, and the surface of the N-GaAs layer between any two adjacent second mesa structures; removing the second mesa structure... A quantum well structure is formed on the surface of the mesa structure to form a third mesa structure; wherein the surface of the quantum well structure on the sidewall of the removed second mesa structure is at the same horizontal plane as the surface of the second mesa structure; a P-GaAs layer is grown; wherein the P-GaAs layer covers the surface of the third mesa structure, the sidewall of the third mesa structure, and the surface of the quantum well structure between any two adjacent third mesa structures; the P-GaAs layer on the surface of the third mesa structure is removed to form a fourth mesa structure; wherein the surface of the P-GaAs layer on the sidewall of the removed third mesa structure is at the same horizontal plane as the surface of the third mesa structure; the first mesa structure is removed and an N-metal electrode is fabricated; wherein the N-metal electrode is deposited on the buffer layer and the sidewall of the P-GaAs layer; a P-metal electrode is fabricated to obtain a laser based on lateral epitaxy; wherein the P-metal electrode is deposited on the P-GaAs layer.

[0007] In one specific implementation, removing the first mesa structure and fabricating an N-metal electrode includes: fabricating a first mask structure; wherein the first mask structure covers the region not covered by the first mesa structure; etching the first mesa structure; fabricating an N-metal electrode; wherein the N-metal electrode is deposited on the surface of the first mask structure, the sidewalls of the N-GaAs layer, and a buffer layer; removing the N-metal electrode and the first mask structure from the first mask structure; wherein the surface of the N-metal electrode on the sidewalls of the removed N-GaAs layer is at the same horizontal plane as the surface of the N-GaAs layer.

[0008] In one specific implementation, fabricating a P-metal electrode to obtain a laterally epitaxial laser includes: fabricating a second mask structure; wherein the second mask structure covers a first region, the first region including an N-metal electrode, the surface of an N-GaAs layer grown on the sidewall of the N-metal electrode, the surface of a quantum well structure grown on the sidewall of the N-GaAs layer, and the surface of a P-GaAs layer grown on the sidewall of the quantum well structure; fabricating a P-metal electrode; wherein the P-metal electrode covers the second mask structure and the P-GaAs layer between any two adjacent second mask structures; removing the P-metal electrode and the second mask structure from the second mask structure to obtain the laterally epitaxial laser; wherein the surface of the P-metal electrode on the sidewall of the removed P-GaAs layer is at the same horizontal plane as the surface of the P-GaAs layer.

[0009] In one specific implementation, the height of the N-GaAs layer is 300-500 nm, and the height of the P-GaAs layer is 300-500 nm.

[0010] In one specific implementation, the height of both the N-GaAs layer and the P-GaAs layer is 400 nm.

[0011] In one specific implementation, the quantum well structure has a period number of 1-3, and the quantum well structure includes a potential barrier and a quantum well that are grown sequentially.

[0012] In one specific implementation, the quantum well structure has 1 period, the barrier height is 8 nm, and the quantum well height is 4 nm.

[0013] In one specific implementation, the substrate is a GaAs substrate, and the buffer layer is an undoped GaAs buffer layer.

[0014] In one specific implementation, the height of the buffer layer is 3μm, and the height of the first mesa structure is 2μm.

[0015] The method for fabricating a laser based on lateral epitaxy provided in the first aspect of this application utilizes epitaxial growth to replace etching technology, transforming the vertical structure into a horizontal structure. This effectively reduces process complexity, decreases the dependence of the fabrication method on high-end equipment, effectively reduces production costs, saves production time, and also improves fabrication uniformity and production yield.

[0016] The second aspect of this application provides a lateral epitaxial laser, which is fabricated using the method provided in the first aspect. The lateral epitaxial laser includes: a substrate; a buffer layer grown on the substrate; an N-metal electrode grown on the buffer layer, wherein the bottom wall of the N-metal electrode is located on the buffer layer, one end of the sidewall of the N-metal electrode is connected to the bottom wall, and the other end forms an opening; an N-GaAs layer grown on the buffer layer, wherein the bottom wall of the N-GaAs layer is located on the buffer layer between any adjacent N-metal electrodes, and the sidewall of the N-GaAs layer is located on the outer wall surface of the sidewall of the N-metal electrode; a quantum well structure grown on the N-GaAs layer; a P-GaAs layer grown on the quantum well structure; and a P-metal electrode grown on the P-GaAs layer.

[0017] The lateral epitaxial laser provided in the second aspect of this application is prepared using the same method as provided in the first aspect. Therefore, its beneficial technical effects can be referred to in the first aspect, and will not be repeated here. Attached Figure Description

[0018] To more clearly illustrate the technical solution of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 is a schematic flowchart of a method for fabricating a laser based on lateral epitaxy provided in an embodiment of this application;

[0020] Figure 2 is a schematic diagram of a buffer layer provided in an embodiment of this application;

[0021] Figure 3 is a structural schematic diagram of a first tabletop structure provided in an embodiment of this application;

[0022] Figure 4 is a schematic diagram of an N-GaAs layer provided in an embodiment of this application;

[0023] Figure 5 is a structural schematic diagram of a second countertop structure provided in an embodiment of this application;

[0024] Figure 6 is a schematic diagram of a quantum well structure provided in an embodiment of this application;

[0025] Figure 7 is a structural schematic diagram of a third platform structure provided in an embodiment of this application;

[0026] Figure 8 is a schematic diagram of a P-GaAs layer provided in an embodiment of this application;

[0027] Figure 9 is a structural schematic diagram of a fourth platform structure provided in an embodiment of this application;

[0028] Figure 10 is a schematic diagram of a first mask structure provided in an embodiment of this application;

[0029] Figure 11 is a schematic diagram of the structure after removing the first platform structure according to an embodiment of this application;

[0030] Figure 12 is a schematic diagram of the structure of an N-metal electrode provided in an embodiment of this application;

[0031] Figure 13 is a schematic diagram of the structure after removing the first mask structure according to an embodiment of this application;

[0032] Figure 14 is a schematic diagram of a second mask structure provided in an embodiment of this application;

[0033] Figure 15 is a schematic diagram of the structure of a P-metal electrode provided in an embodiment of this application;

[0034] Figure 16 is a schematic diagram of a laser based on lateral epitaxy provided in an embodiment of this application.

[0035] Illustration labels: 100-Lateral epitaxial laser; 1-Substrate; 2-Buffer layer; 21-First mesa structure; 3-N-GaAs layer; 31-Second mesa structure; 4-Quantum well structure; 41-Third mesa structure; 5-P-GaAs layer; 51-Fourth mesa structure; 6-First mask structure; 7-N-Metal electrode; 8-Second mask structure; 9-P-Metal electrode. Detailed Implementation

[0036] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are all within the protection scope of this application.

[0037] In the following description, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0038] Furthermore, in this application, directional terms such as "upper," "lower," "inner," and "outer" are defined relative to the indicated placement of the components in the accompanying drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and can change accordingly depending on the placement of the components in the accompanying drawings.

[0039] Traditional laser fabrication methods typically involve deep etching of ridge waveguides, requiring sophisticated etching processes, specialized equipment, and advanced techniques, making the entire production process complex and expensive. To achieve effective optical field confinement and low-loss waveguide performance, deep etching must be extremely precise, demanding high-precision processing techniques and rigorous quality control. During etching, thermal effects arise, and excessive heat can negatively impact material properties. Furthermore, the resulting laser cannot guarantee uniformity.

[0040] To address the issues of reliance on high-end equipment, complex manufacturing methods, high production costs, and poor uniformity of lasers during laser fabrication, this application provides a method for fabricating lasers based on lateral epitaxy.

[0041] The method for fabricating a lateral epitaxial laser provided in this application can be achieved by the following steps S1 to S10. This fabrication method can reduce process complexity, reduce dependence on high-end equipment, improve laser uniformity, effectively reduce fabrication costs, and effectively improve product yield.

[0042] Referring to Figures 1 and 2, step S1: grow a buffer layer 2 on substrate 1.

[0043] In step S1, the buffer layer 2 can be grown using metal-organic chemical vapor deposition (MOCVD).

[0044] In this design, substrate 1 can be a GaAs substrate, and buffer layer 2 can be an undoped GaAs buffer layer.

[0045] In one specific implementation, the thickness of the undoped GaAs buffer layer can be 3 μm.

[0046] Referring to Figures 1 and 3, step S2: etch the buffer layer 2 to form multiple first mesa structures 21.

[0047] In step S2, the etching of the first mesa structure 21 can be achieved through the following steps S21 and S22.

[0048] Step S21: Photolithographically pattern a mask structure on the surface of buffer layer 2 (not shown in the figure).

[0049] The portion not covered by the patterned mask structure consists of multiple circular voids. The positions of these circular voids correspond to the positions of the surface of the first mesa structure 21 to be etched. Subsequently, the first mesa structure 21 to be prepared can be obtained by etching the patterned mask structure.

[0050] Step S22: Etch the patterned mask structure and the buffer layer 2 covered by the patterned mask structure.

[0051] Thus, the first mesa structure 21 obtained by etching is columnar. The etching depth is less than the thickness of the buffer layer 2, and the height of the first mesa structure 21 is less than the height of the buffer layer 2.

[0052] In one specific implementation, the thickness of the buffer layer 2 can be 3 μm, and the height H1 of the first mesa structure 21 can be 2 μm. In this case, the height of the unetched portion of the buffer layer 2 is 1 μm. The diameter D1 of the first mesa structure 21 can be 2 μm. The distance between the centers of any two adjacent first mesa structures 21 can be 5 μm.

[0053] In another specific implementation, step S2 can also be implemented by steps S23 to S25 to etch the first mesa structure 21.

[0054] Step S23: Photolithographically print a circular mask structure on the surface of buffer layer 2 (not shown in the figure).

[0055] The diameter of the circular mask structure is the same as the diameter of the first mesa structure 21 to be etched, and they are positioned opposite each other.

[0056] Step S24: Etch the buffer layer 2 that is not covered by the circular mask structure.

[0057] The etching depth can be the same as the implementation method described above.

[0058] Step S25: Remove the circular mask structure.

[0059] One method is to remove the circular mask structure by cleaning.

[0060] It is worth noting that, in the two different implementation methods, the appropriate method can be selected based on the preparation environment and equipment parameters.

[0061] Referring to Figures 1 and 4, step S3: grow N-GaAs layer 3.

[0062] In step S3, an N-GaAs layer 3 can be prepared using MOCVD technology. The N-GaAs layer 3 covers the surface of the first mesa structure 21, the sidewalls of the first mesa structure 21, and the buffer layer 2 between any two adjacent first mesa structures 21.

[0063] The thickness of the N-GaAs layer 3 can be 300-500 nm. For example, the thickness of the N-GaAs layer 3 can be one of 300 nm, 350 nm, 400 nm, 450 nm, or 500 nm. Of course, the thickness of the N-GaAs layer 3 can also be any other value within the 300-500 nm range.

[0064] Referring to Figures 1 and 5, step S4: Remove the N-GaAs layer 3 from the surface of the first mesa structure 21 to form the second mesa structure 31.

[0065] In step S4, chemical mechanical polishing (CMP) can be used to remove the N-GaAs layer 3.

[0066] In this design, the surface of the N-GaAs layer 3 on the sidewall of the first mesa structure 21 after removal is at the same horizontal plane as the surface of the first mesa structure 21. That is, the surface of the second mesa structure 31 is composed of the surface of the first mesa structure 21 and the surface of the N-GaAs layer 3 grown on the sidewall of the first mesa structure 21.

[0067] Specifically, the diameter D2 of the second platform structure 31 is larger than the diameter D1 of the first platform structure 21. The height H2 of the second platform structure 31 is smaller than the height H1 of the first platform structure 21.

[0068] Referring to Figures 1 and 6, step S5: growing the quantum well structure 4.

[0069] In step S5, a quantum well structure 4 can be fabricated on the second mesa structure 31 using MOCVD technology. The quantum well structure 4 covers the surface of the second mesa structure 31, the sidewalls of the second mesa structure 31, and the N-GaAs layer 3 between any two adjacent second mesa structures 31.

[0070] In some feasible implementations, the quantum well structure 4 comprises a barrier and a quantum well grown sequentially. The number of periods in the quantum well structure 4 can be 1-3.

[0071] For example, the number of periods of the quantum well structure 4 can be 2, in which case the quantum well structure 4 includes a barrier, a quantum well, a barrier, and a quantum well that grow in sequence.

[0072] In one specific implementation, the number of periods of the quantum well structure 4 can be 1. In a 1-period quantum well structure 4, the height of the barrier can be 8 nm and the height of the quantum well can be 4 nm.

[0073] Referring to Figures 1 and 7, step S6: remove the quantum well structure 4 from the surface of the second mesa structure 31 to form the third mesa structure 41.

[0074] In step S6, CMP technology can be used to remove the quantum well structure 4.

[0075] In this case, the surface of the quantum well structure 4 on the sidewall of the removed second mesa structure 31 is on the same horizontal plane as the surface of the second mesa structure 31. That is to say, the surface of the third mesa structure 41 is composed of the surface of the second mesa structure 31 and the surface of the quantum well structure 4 grown on the sidewall of the second mesa structure 31.

[0076] Specifically, the diameter D3 of the third platform structure 41 is greater than the diameter D2 of the second platform structure 31. The height H3 of the third platform structure 41 is less than the height H2 of the second platform structure 31.

[0077] Referring to Figures 1 and 8, step S7: grow P-GaAs layer 5.

[0078] In step S7, a P-GaAs layer 5 can be grown using MOCVD technology. The P-GaAs layer 5 covers the surface of the third mesa structure 41, the sidewalls of the third mesa structure 41, and the quantum well structure 4 between any two adjacent third mesa structures 41.

[0079] The thickness of the P-GaAs layer 5 can be 300-500 nm. For example, the thickness of the P-GaAs layer 5 can be one of 300 nm, 350 nm, 400 nm, 450 nm, or 500 nm. Of course, the thickness of the P-GaAs layer 5 can also be other values ​​within the 300-500 nm range.

[0080] In one specific implementation, the height of the N-GaAs layer 3 is the same as the height of the P-GaAs layer 5, both being 400 nm.

[0081] Referring to Figures 1 and 9, step S8: remove the P-GaAs layer 5 from the surface of the third mesa structure 41 to form the fourth mesa structure 51.

[0082] In step S8, CMP technology can be used to remove the P-GaAs layer 5.

[0083] In this design, the surface of the P-GaAs layer 5 on the sidewall of the removed third mesa structure 41 is at the same horizontal plane as the surface of the third mesa structure 41. That is, the surface of the fourth mesa structure 51 is composed of the surface of the third mesa structure 41 and the surface of the P-GaAs layer 5 grown on the sidewall of the third mesa structure 41.

[0084] Specifically, the diameter D4 of the fourth platform structure 51 is greater than the diameter D3 of the third platform structure 41. The height H4 of the fourth platform structure 51 is less than the height H3 of the third platform structure 41.

[0085] Step S9: Remove the first mesa structure 21 and prepare an N-metal electrode.

[0086] Specifically, step S9 can be achieved by the following steps S91 to S94.

[0087] Referring to Figures 1 and 10, step S91: Prepare the first mask structure 6.

[0088] In this process, N-metal electrodes are deposited on the sidewalls of buffer layer 2 and N-GaAs layer 3.

[0089] In step S91, a first mask structure 6 can be fabricated using photolithography, wherein the first mask structure 6 covers the area not covered by the first mesa structure 21. This allows for subsequent etching of the portion not covered by the first mask structure 6 to achieve the purpose of etching the first mesa structure 21. The diameter of the mesa of the etched portion of the first mesa structure 21 is D1 as shown in Figure 3.

[0090] In one specific implementation, the diameter of the first mask structure 6 can be 3 μm, and the distance between the centers of any two adjacent first mask structures 6 can be 5 μm.

[0091] Referring to Figures 1 and 11, step S92: Etching the first mesa structure 21.

[0092] In step S92, the first mesa structure 21 can be removed using ICP etching technology, thereby exposing the sidewalls of the N-GaAs layer 3. The etching depth is equal to the height of the first mesa structure 21.

[0093] Referring to Figures 1 and 12, step S93: Prepare N-metal electrode 7.

[0094] In step S93, sputtering technology can be used to deposit the N-metal electrode 7. The N-metal electrode 7 is deposited on the surface of the first mask structure 6, the sidewalls of the N-GaAs layer 3, and the buffer layer 2.

[0095] Referring to Figures 1 and 13, step S94: Remove the N-metal electrode 7 and the first mask structure 6 from the first mask structure 6.

[0096] In step S94, the N-metal electrode 7 can be removed using a stripping technique. The surface of the N-metal electrode 7 on the sidewall of the stripped N-GaAs layer 3 is at the same horizontal plane as the surface of the N-GaAs layer 3. In other words, the surface of the N-metal electrode 7 on the sidewall of the stripped N-GaAs layer 3 is at the same horizontal plane as the surfaces of the N-GaAs layer 3, the quantum well structure 4, and the P-GaAs layer 5.

[0097] Step S10: Prepare a P-metal electrode to obtain a laser based on lateral epitaxy.

[0098] Among them, the P-metal electrode is deposited on the P-GaAs layer 5.

[0099] Specifically, step S10 can be achieved by the following steps S101 to S103.

[0100] Referring to Figures 1 and 14, step S101: Prepare the second mask structure 8.

[0101] In step S101, a second mask structure 8 can be fabricated using photolithography, wherein the second mask structure 8 covers the first region. The diameter of the first region is D5.

[0102] Specifically, the first region includes the N-metal electrode 7, the surface of the N-GaAs layer 3 grown on the sidewall of the N-metal electrode 7, the surface of the quantum well structure 4 grown on the sidewall of the N-GaAs layer 3, and the surface of the P-GaAs layer 5 grown on the sidewall of the quantum well structure 4. The first region does not include the walls of the P-GaAs layers 5 within the enclosed area between the sidewalls of the P-GaAs layers 5; that is, the first region does not include the walls of the P-GaAs layers 5 sequentially stacked on top of the buffer layer 2.

[0103] In other words, the first region can correspond to the region where the surface of the fourth mesa structure 51 prepared in step S8 is located.

[0104] In one specific implementation, the diameter of the second mask structure 8 can be 3 μm, and the distance between the centers of any two adjacent second mask structures 8 is 5 μm.

[0105] Referring to Figures 1 and 15, step S102: Prepare the P-metal electrode 9.

[0106] In step S102, sputtering technology can be used to deposit a P-metal electrode 9, wherein the P-metal electrode 9 covers the second mask structure 8 and the P-GaAs layer 5 between any two adjacent second mask structures 8.

[0107] Referring to Figures 1 and 16, step S103: remove the P-metal electrode 9 on the second mask structure 8 and the second mask structure 8 to obtain the laser 100 based on lateral epitaxy.

[0108] In step S103, a stripping technique can be used to remove the P-metal electrode 9 and the second mask structure 8. The surface of the P-metal electrode 9 on the sidewall of the removed P-GaAs layer 5 is on the same horizontal plane as the surface of the P-GaAs layer 5. The surface of any structure refers to the top surface of that structure layer on the side facing away from the buffer layer 2. For example, the surface of the P-metal electrode 9 is the top surface of the P-metal electrode 9 on the side facing away from the buffer layer 2, which is the surface that coincides with the plane containing the surfaces of the first mesa structure 21, the second mesa structure 31, the third mesa structure 41, and the fourth mesa structure 51.

[0109] The prepared P-metal electrode 9 is a stacked structure layer with the previously prepared P-GaAs layer 5, quantum well structure 4 and N-GaAs layer 3. They have the same cross-sectional shape but different size.

[0110] The method for fabricating a laser based on lateral epitaxy provided in this application utilizes epitaxial growth to replace etching technology, transforming the vertical structure into a horizontal structure. This effectively reduces process complexity, decreases the reliance on high-end equipment, reduces production costs and saves production time, while also improving fabrication uniformity and increasing production yield.

[0111] Corresponding to the aforementioned embodiments of the fabrication method of a laser based on lateral epitaxy, this application also provides an embodiment of a laser 100 based on lateral epitaxy.

[0112] Referring again to Figure 16, the lateral epitaxial laser 100 includes: a substrate 1, a buffer layer 2, an N-metal electrode 7, an N-GaAs layer 3, a quantum well structure 4, a P-GaAs layer 5, and a P-metal electrode 9.

[0113] A buffer layer 2 is grown on a substrate 1; an N-metal electrode 7 is grown on the buffer layer 2, wherein the bottom wall of the N-metal electrode 7 is located on the buffer layer 2, one end of the sidewall of the N-metal electrode 7 is connected to the bottom wall, and the other end forms an opening; an N-GaAs layer 3 is grown on the buffer layer 2, wherein the bottom wall of the N-GaAs layer 3 is located on the buffer layer 2 between any adjacent N-metal electrodes 7, and the sidewall of the N-GaAs layer 3 is located on the outer wall surface of the sidewall of the N-metal electrode 7; a quantum well structure 4 is grown on the N-GaAs layer 3; a P-GaAs layer 5 is grown on the quantum well structure 4; and a P-metal electrode 9 is grown on the P-GaAs layer 5.

[0114] It should be noted that, upon considering the specification and practicing the application disclosed herein, those skilled in the art will readily conceive of other embodiments of this application. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein.

[0115] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The true scope is indicated by this application.

Claims

1. A method for fabricating a laser based on lateral epitaxy, characterized in that, include: A buffer layer is grown on the substrate; The buffer layer is etched to form a plurality of first mesa structures; wherein the first mesa structure is columnar and the height of the first mesa structure is less than the height of the buffer layer; An N-GaAs layer is grown; wherein the N-GaAs layer covers the surface of the first mesa structure, the sidewall of the first mesa structure, and the surface of the buffer layer between any two adjacent first mesa structures; The N-GaAs layer on the surface of the first mezzanine structure is removed to form a second mezzanine structure; wherein the surface of the N-GaAs layer on the sidewall of the removed first mezzanine structure is at the same horizontal plane as the surface of the first mezzanine structure. A quantum well structure is grown; wherein the quantum well structure covers the surface of the second mesa structure, the sidewalls of the second mesa structure, and the surface of the N-GaAs layer between any two adjacent second mesa structures; The quantum well structure on the surface of the second mesa structure is removed to form a third mesa structure; wherein the surface of the quantum well structure on the sidewall of the removed second mesa structure is at the same horizontal plane as the surface of the second mesa structure. A P-GaAs layer is grown; wherein the P-GaAs layer covers the surface of the third mesa structure, the sidewalls of the third mesa structure, and the surface of the quantum well structure between any two adjacent third mesa structures. The P-GaAs layer on the surface of the third mezzanine structure is removed to form a fourth mezzanine structure; wherein the surface of the P-GaAs layer on the sidewall of the removed third mezzanine structure is at the same horizontal plane as the surface of the third mezzanine structure. The first mesa structure is removed and an N-metal electrode is fabricated; wherein the N-metal electrode is deposited on the sidewalls of the buffer layer and the P-GaAs layer; A P-metal electrode is fabricated to obtain a laser based on lateral epitaxy; wherein the P-metal electrode is deposited in the P-GaAs layer.

2. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, Removing the first mesa structure and fabricating an N-metal electrode includes: A first mask structure is fabricated; wherein the first mask structure covers the region other than the first mesa structure; Etch the first mesa structure; An N-metal electrode is prepared; wherein the N-metal electrode is deposited on the surface of the first mask structure, the sidewall of the N-GaAs layer, and the buffer layer; Remove the N-metal electrode and the first mask structure from the first mask structure; wherein, the surface of the N-metal electrode on the sidewall of the removed N-GaAs layer is at the same horizontal plane as the surface of the N-GaAs layer.

3. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, Fabricating P-metal electrodes to obtain a laser based on lateral epitaxy, including: A second mask structure is fabricated; wherein the second mask structure covers a first region, the first region including the N-metal electrode, the surface of the N-GaAs layer grown on the sidewall of the N-metal electrode, the surface of the quantum well structure grown on the sidewall of the N-GaAs layer, and the surface of the P-GaAs layer grown on the sidewall of the quantum well structure; A P-metal electrode is fabricated; wherein the P-metal electrode covers the second mask structure and the P-GaAs layer between any two adjacent second mask structures; The P-metal electrode on the second mask structure and the second mask structure are removed to obtain a laser based on lateral epitaxy; wherein the surface of the P-metal electrode on the sidewall of the removed P-GaAs layer is at the same horizontal plane as the surface of the P-GaAs layer.

4. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, The height of the N-GaAs layer is 300-500 nm, and the height of the P-GaAs layer is 300-500 nm.

5. The method for fabricating a laser based on lateral epitaxy according to claim 4, characterized in that, The height of both the N-GaAs layer and the P-GaAs layer is 400 nm.

6. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, The quantum well structure has a period number of 1-3, and the quantum well structure includes a potential barrier and a quantum well that are grown sequentially.

7. The method for fabricating a laser based on lateral epitaxy according to claim 6, characterized in that, The quantum well structure has a period number of 1, the barrier height is 8 nm, and the quantum well height is 4 nm.

8. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, The substrate is a GaAs substrate, and the buffer layer is an undoped GaAs buffer layer.

9. The method for fabricating a laser based on lateral epitaxy according to claim 1, characterized in that, The height of the buffer layer is 3 μm, and the height of the first platform structure is 2 μm.

10. A laser based on lateral epitaxy, characterized in that, The laser is fabricated using the method for fabricating a laterally epitaxial laser as described in any one of claims 1-9, wherein the laterally epitaxial laser comprises: Substrate; A buffer layer is grown on the substrate; An N-metal electrode is grown on the buffer layer; wherein the bottom wall of the N-metal electrode is located on the buffer layer, one end of the side wall of the N-metal electrode is connected to the bottom wall, and the other end forms an opening; An N-GaAs layer is grown on the buffer layer; wherein the bottom wall of the N-GaAs layer is located on the buffer layer between any two adjacent N-metal electrodes, and the sidewall of the N-GaAs layer is located on the outer wall surface of the sidewall of the N-metal electrode. A quantum well structure is grown on the N-GaAs layer; A P-GaAs layer is grown on the quantum well structure; P-metal electrode, grown on the P-GaAs layer.

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