Heat exchanger, thermal field device, and single crystal furnace

Abstract

A heat exchanger and a single crystal furnace. The heat exchanger comprises: an annular body, wherein a hollow portion near the inner side of the annular body is a crystal channel, and the inside of the annular body is provided with at least one annular flow channel arranged in the axial direction of the annular body; and a water inlet pipe and a water outlet pipe, each of which is connected to at least one annular flow channel. The heat exchanger has strong overall heat dissipation capacity; the longitudinal temperature gradient of a single crystal silicon rod can be significantly increased, thereby improving the pulling rate of the single crystal silicon rod.

Description

A heat exchanger, a thermal field device, and a single crystal furnace

[0001] Cross-reference to related applications

[0002] This application claims priority and interest in Chinese patent application No. 202422379016.X, filed on September 27, 2024, and Chinese patent application No. 202422116695.1, filed on August 29, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This application belongs to the field of photovoltaic processing technology, specifically relating to a heat exchanger, a thermal field device, and a single crystal furnace. Background Technology

[0004] With the development of technology, photovoltaic power generation, as a green energy source and a major energy source for human sustainable development, has received increasing attention and vigorous development from countries around the world in recent years. Monocrystalline silicon wafers, as a fundamental material for photovoltaic power generation, have a wide market demand. Monocrystalline silicon wafers are typically obtained by slicing monocrystalline silicon rods, which in turn are grown and pulled from silicon material.

[0005] Currently, to reduce the production cost of monocrystalline silicon rods, the monocrystalline silicon rod manufacturing industry is developing towards larger hot zones, larger charge sizes, larger dimensions, and higher pulling speeds. Among these, the most effective means to reduce the production cost of monocrystalline silicon rod pulling and increase the pulling speed is to increase the crystal growth rate. The existing conventional method to increase the crystal growth rate is to place a heat exchanger above the crucible, radiating the heat released during crystallization to the heat exchanger via radiation heat transfer, and then carrying it out of the furnace through the cooling medium flowing within the heat exchanger, thereby increasing the longitudinal temperature gradient of the crystal rod and increasing the crystal growth rate. However, existing heat exchangers generally suffer from low heat absorption efficiency and limited heat dissipation capacity, resulting in limited effectiveness in increasing the longitudinal temperature gradient of the crystal rod. Consequently, the increase in the pulling speed of monocrystalline silicon rods is greatly limited.

[0006] In addition, one way to increase the longitudinal temperature gradient of the crystal rod is to reduce the distance between the heat exchanger and the crystallization interface. However, this will affect the stability of the solid-liquid interface temperature, thereby affecting the normal growth of the crystal and causing problems such as increased breakage rate in crystal growth, making it difficult to ensure high-quality and rapid crystal growth.

[0007] Application content

[0008] This application provides a heat exchanger, a thermal field device, and a single crystal furnace that overcomes or at least partially solves the above-mentioned problems.

[0009] To solve the above-mentioned technical problems, this application is implemented as follows:

[0010] In a first aspect, this application discloses a heat exchanger, the heat exchanger comprising:

[0011] The annular body has a hollow portion near the inner side of the annular body that serves as a crystal channel, and at least one annular flow channel distributed along the axial direction of the annular body is provided within the annular body.

[0012] The water inlet pipe and the water outlet pipe are respectively connected to at least one of the annular flow channels;

[0013] Wherein, the height of the annular flow channel along the axial direction of the annular body is the first height, the width of the annular flow channel along the radial direction of the annular body is the first width, and the ratio of the first height to the first width is 4:3-200:1.

[0014] In this embodiment, the annular body is provided with a plurality of annular flow channels distributed along the axial direction, and two adjacent annular flow channels are connected. The height of the annular flow channel along the axial direction of the annular body is a first height, and the width of the annular flow channel along the radial direction of the annular body is a first width. The ratio of the first height to the first width is 4:3-200:1, to increase the aspect ratio of the annular flow channel. When the cooling medium flows through the annular flow channel, the contact area between the turbulent portion of the cooling medium and the annular flow channel can be increased, improving heat exchange efficiency. This improves the overall heat dissipation capacity of the heat exchanger, significantly increases the longitudinal temperature gradient of the single-crystal silicon rod, and thus increases the pulling speed of the single-crystal silicon rod.

[0015] Optionally, the ratio of the first height to the first width is 2:1-50:1, so as to control the ratio of the first height to the first width within a reasonable range, so that the heat exchanger has a better heat exchange effect and improves the pulling speed of the single crystal silicon rod.

[0016] Optionally, the annular body has an inner wall close to the crystal channel and an outer wall away from the crystal channel; wherein, a turbulence structure is also provided in the annular flow channel, the turbulence structure increasing the local flow velocity of the cooling medium on the inner wall, thereby increasing the heat exchange efficiency of the cooling medium on the inner wall and removing the heat from the inner wall more quickly.

[0017] In practical applications, the turbulence structure set within the annular flow channel can be used to change the local flow velocity of the cooling medium within the annular flow channel, thereby adjusting the heat transfer efficiency of the cooling medium. Since the annular flow channel mainly removes the latent heat of crystallization of the single-crystal silicon rod through heat exchange on the inner wall of the cooling medium, the turbulence structure can be used to increase the flow velocity of the cooling medium on the inner wall, so as to remove the latent heat of crystallization generated by the single-crystal silicon rod more quickly.

[0018] Optionally, the turbulence structure includes a protrusion disposed on the side of the outer wall near the annular flow channel, the protrusion protruding toward the inner wall.

[0019] When the cooling medium flows through the protrusion, the protrusion can squeeze the cooling medium towards the inner wall, thereby increasing the flow velocity of the cooling medium on the inner wall. This further enhances the scouring effect of the cooling medium on the inner wall, carrying away surface bubbles generated at high temperatures, further reducing interfacial thermal resistance and improving heat exchange efficiency.

[0020] Secondly, this application also discloses a heat exchanger, comprising: an annular body, a hollow portion near the inner side of the annular body serving as a crystal channel, and at least one annular flow channel distributed along the axial direction of the annular body disposed within the annular body; an inlet pipe and an outlet pipe, the inlet pipe and the outlet pipe being respectively connected to at least one of the annular flow channels. The heat exchanger further comprises a tip section, and the annular body comprises a cylindrical section; the cylindrical section and the tip section are disposed along a first direction, and the cylindrical section and the tip section are fixedly connected; the first direction is the axial direction of the heat exchanger; the cylindrical section comprises a first inner wall and a first outer wall; a first heat exchange cavity is formed between the first inner wall and the first outer wall; along the first direction, the orthographic projection of the outer peripheral surface of the tip section is located inside the orthographic projection of the first outer wall; the distance between the first inner wall and the first outer wall is d1, and the distance between the outer peripheral surface and the inner peripheral surface of the tip section is d2, where d1 ≥ 1.2d2.

[0021] Optionally, the tip segment includes a second inner wall and a second outer wall; a second heat exchange cavity is formed between the second inner wall and the second outer wall; the second inner wall is fixedly connected to the first inner wall, and the second outer wall is fixedly connected to the first outer wall.

[0022] Optionally, the second outer wall includes a vertical wall; the end of the vertical wall is fixedly connected to the first outer wall; or, the second outer wall includes a vertical wall and a second conical wall; one end of the vertical wall is fixedly connected to the first outer wall, and the other end is fixedly connected to the second conical wall.

[0023] Optionally, the heat exchanger includes a transition section; the cylindrical section is fixedly connected to the tip section through the transition section; the orthographic projection of the outer wall of the transition section is located inside the orthographic projection of the first outer wall, and the orthographic projection of the second outer wall is located inside the orthographic projection of the outer wall of the transition section.

[0024] Optionally, the inner surface of the first inner wall is provided with a first absorbent coating; the inner surface of the second inner wall is provided with a second absorbent coating.

[0025] Optionally, along the first direction, a third absorption coating is provided at the end of the tip segment away from the cylindrical segment, and the emissivity of the third absorption coating is greater than 0.2.

[0026] Thirdly, this application also discloses a thermal field device, including a heat shield and the aforementioned heat exchanger; the heat shield is fitted over the heat exchanger.

[0027] Optionally, the heat shield includes an insulation component and an outer liner; the outer liner is fitted over the heat exchanger.

[0028] Fourthly, this application also discloses a single crystal furnace, the single crystal furnace comprising: the heat exchanger described in any of the preceding claims.

[0029] Additional aspects and advantages of this application will be set forth in part in the description which follows, and some of these additional aspects and advantages will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0030] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0031] Figure 1 is a schematic diagram of a heat exchanger according to an embodiment of this application;

[0032] Figure 2 is a cross-sectional structural schematic diagram of the heat exchanger shown in Figure 1;

[0033] Figure 3 is a schematic diagram of the annular flow channel at position A in the heat exchanger shown in Figure 2;

[0034] Figure 4 is a schematic cross-sectional view of another annular flow channel according to an embodiment of this application;

[0035] Figure 5 is a schematic diagram of the distribution of protrusions on the side of the outer wall near the annular flow channel in an embodiment of this application;

[0036] Figure 6 is a schematic diagram of the flow channel cross-section of a heat exchanger in the prior art;

[0037] Figure 7 is a structural schematic diagram of a heat exchanger according to this application;

[0038] Figure 8 is a front view of a heat exchanger according to this application;

[0039] Figure 9 is a partially enlarged view of a heat exchanger according to this application;

[0040] Figure 10 is a partial cross-sectional view of a heat exchanger and heat shield combination according to this application;

[0041] Figure 11 is a partially enlarged cross-sectional view of a heat exchanger and heat shield combination according to this application;

[0042] Figure 12A is a heat map of an existing thermal field device;

[0043] Figure 12B is a thermal diagram of the thermal field device of this application.

[0044] Reference numerals: 10-Annular body, 100-Channel, 101-Inner wall, 102-Outer wall, 103-Baffle, 104-Annular flow channel, 105-Protrusion, 11-Inlet pipe, 12-Outlet pipe, 30-Turbulent section, 20-Flow section, x-Radial, y-Axial, 1-Cylindrical section, 1011-First inner wall, 1012-First outer wall, 1013-First heat exchange channel, 1014-First heat exchange cavity, 2-Tip section, 2021-Second inner wall, 2022-Second outer wall, 222-Vertical wall, 223-Second conical wall, 2023-Second heat exchange channel, 2024-Second heat exchange cavity, 4-Transition section, 41-First conical wall, 200-Heat shield, 210-Inner liner, 220-Outer liner, 230-Insulation component. Detailed Implementation

[0045] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0046] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0047] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0048] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0049] This application provides a heat exchanger that can be used in a single-crystal furnace. Specifically, during crystal growth, the heat exchanger is fitted around a single-crystal silicon rod. The heat exchanger absorbs the heat radiated by the single-crystal silicon rod during crystallization and transfers the absorbed heat to the outside of the furnace, thereby increasing the longitudinal temperature gradient of the single-crystal silicon rod and improving the crystal growth rate. The heat exchanger can be any of a water-cooled heat exchanger or a heat exchanger using other cooling media. This application only uses a water-cooled heat exchanger as an example for illustration; the same principle applies to heat exchangers using other cooling media.

[0050] Referring to Figure 1, a structural schematic diagram of a heat exchanger according to an embodiment of this application is shown; referring to Figure 2, a cross-sectional structural schematic diagram of the heat exchanger shown in Figure 1 is shown; and referring to Figure 3, a structural schematic diagram of the annular flow channel at position A in the heat exchanger shown in Figure 2 is shown.

[0051] As shown in Figures 1 to 3, the heat exchanger may specifically include: an annular body 10, a hollow portion near the inner side of the annular body 10 serving as a channel 100 for the insertion of a single-crystal silicon rod, and multiple annular flow channels 104 distributed along the axial direction y of the annular body 10, with adjacent annular flow channels 104 connected; an inlet pipe 11 and an outlet pipe 12, each connected to at least one annular flow channel 104. As shown in Figure 3, the height of the annular flow channel 104 along the axial direction y of the annular body 10 is a first height H1, and the width of the annular flow channel 104 along the radial direction x of the annular body 10 is a first width W1, with the ratio of the first height H1 to the first width W1 being 4:3-200:1. The channel 100 is a crystal channel for the silicon rod to pass through during crystal growth.

[0052] In this embodiment, a plurality of annular flow channels 104 distributed along the axial direction y are provided within the annular body 10, and adjacent annular flow channels 104 are connected. The height of the annular flow channel 104 along the axial direction y of the annular body 10 is a first height H1, and the width of the annular flow channel 104 along the radial direction x of the annular body 10 is a first width W1. The ratio of the first height H1 to the first width W1 is 4:3-200:1, thereby increasing the aspect ratio of the annular flow channel 104. When the cooling medium flows through the annular flow channel 104, the contact area between the turbulent portion of the cooling medium and the annular flow channel 104 can be increased, improving heat exchange efficiency. This improves the overall heat dissipation capacity of the heat exchanger, significantly increases the longitudinal temperature gradient of the single-crystal silicon rod, and thus increases the pulling speed of the single-crystal silicon rod.

[0053] As an optional implementation of this embodiment, the cross-section of the annular flow channel 104 is rectangular; as shown in Figure 3, the turbulent cross-section 30 within the annular flow channel 104 is elliptical, wherein the turbulence is formed when the cooling medium flows through the annular flow channel 104. In practical applications, when the cooling medium flows through the annular flow channel 104, the flow velocity at the corners is usually slower, while the flow velocity at other locations is faster. The faster-flowing fluid can form turbulence. As shown in Figure 3, since the ratio of the first height H1 of the annular flow channel 104 along the axial direction y of the annular body 10 to the first width W1 along the radial direction x of the annular body 10 is 4:3-200:1, when the cooling medium flows through the annular flow channel 104 shown in Figure 3, except for the slower flow velocity at the corners, the faster-flowing cooling medium will form turbulence with an elliptical cross-section within the annular flow channel 104. Since the turbulent cross section 30 shown in Figure 3 is elliptical, the contact area between the turbulent part and the surface of the heat exchanger is large, and the heat exchange efficiency is also high, which is beneficial to improving the overall heat dissipation capacity of the heat exchanger.

[0054] Referring to Figure 6, a schematic diagram of the flow channel cross-section of another conventional heat exchanger is shown. As shown in Figure 6, the shape of the flow channel cross-section in the prior art is usually square, that is, the axial height (y) of the flow channel along the heat exchanger is approximately equal to the radial width (x). In this case, the shape of the water flow cross-section 20 formed when the cooling medium flows through the flow channel is usually circular.

[0055] Comparing Figures 3 and 6, it can be seen that in this embodiment, by setting the cross-sectional shape of the annular flow channel 104 to a long and narrow rectangle, the turbulent cross-section 30 within the annular flow channel 104 can be elliptical. Compared to the circular water flow cross-section 20 shown in Figure 6, the elliptical cross-section results in a larger contact area between the turbulent flow and the surface of the heat exchanger, which is beneficial for increasing the heat exchanger's heat transfer capacity.

[0056] As another optional implementation of this embodiment, the cross-section of the annular flow channel 104 is a parallelogram. The first height H1 of the annular flow channel 104 along the axial direction y of the annular body 10 is the height between the upper and lower sides of the parallelogram cross-section; the first width W1 of the annular flow channel 104 along the radial direction x of the annular body 10 is the width of the upper and lower sides of the parallelogram cross-section. In this embodiment, by determining the ratio of the first height H1 of the annular flow channel 104 along the axial direction y of the annular body 10 to the first width W1 along the radial direction x of the annular body 10 to be 4:3-200:1, the turbulent cross-sectional shape of the cooling medium within the annular flow channel is improved, increasing the contact area between the cooling medium and the inner wall of the annular body, thereby improving heat exchange efficiency.

[0057] In some embodiments of this application, the cross-section of the annular flow channel 104 is designed to be flat, such as a slender rectangle or a thin parallelogram. The flat shape is characterized by a length along the axial direction of the annular body that is greater than its width along the radial direction, and the ratio of the two is within a given range. Compared to conventional heat exchangers, the radial thickness (x) of the annular body 10 of the heat exchanger described in this embodiment can be thinner. Specifically, the annular body 10 has a bottom end face near the crucible, and the width of the bottom end face along the radial direction (x) of the annular body 10 is a second width. Specifically, the second width is the distance between the inner circumferential surface of the inner sidewall and the outer circumferential surface of the outer sidewall of the annular body 10 at the bottom end face, and the second width is less than or equal to 30 mm. This allows for a smaller area of ​​the bottom surface of the annular body 10 relative to the surface of the molten silicon in the crucible, resulting in less thermal influence of the bottom of the annular body 10 on the surface of the molten silicon in the radial region of the annular body. Therefore, compared with the prior art, the heat exchanger can be lowered further to reduce the distance between the bottom surface of the annular body 10 and the silicon liquid, which is beneficial to increase the longitudinal temperature gradient on the surface of the silicon liquid and improve the crystal growth rate; at the same time, when the annular body is close to the surface of the silicon liquid, the influence on the lateral temperature gradient on the surface of the silicon liquid is reduced.

[0058] During normal crystal growth, the lateral temperature gradient on the silicon melt surface affects the breakage rate of crystal growth. In this embodiment, while increasing the longitudinal temperature gradient and improving the crystal growth rate, the influence of the heat exchanger on the lateral temperature gradient on the silicon melt surface is reduced, thus not affecting the breakage rate of crystal growth. For example, the second width can be 30 mm, 28 mm, 25 mm, or 18 mm, etc.; however, this embodiment does not specifically limit the second width.

[0059] Specifically, the annular body 10 serves as the main structural component of the heat exchanger, connecting the inlet pipe 11 and the outlet pipe 12, and accommodating the cooling medium. The annular body 10 may specifically include an annular shell, comprising an inner wall 101 and an outer wall 102 disposed opposite to each other, wherein the inner wall 101 is closer to the channel 100, and the outer wall 102 is farther from the channel 100. The inner wall 101 and the outer wall 102 enclose and form an inner cavity for the cooling medium to circulate. It should be noted that, in this embodiment, the first width W1 is the radial width of the inner cavity of the annular flow channel 104, and should not include the width of the inner wall 101 and the outer wall 102 themselves. The channel 100 refers to the channel through which the single-crystal silicon rod passes during crystal growth.

[0060] Optionally, as shown in FIG2, a plurality of baffles 103 are provided in the inner cavity. The baffles 103 can be used to divide the inner cavity into a plurality of annular flow channels 104. The plurality of annular flow channels 104 can be distributed in a spiral shape or in a plurality of parallel rings. In this embodiment of the application, no limitation is made in this respect.

[0061] It should be noted that, in practical applications, in addition to dividing the inner cavity into multiple annular flow channels 104 by the partition 103, the annular flow channels 104 can also be formed by pipes with elliptical cross sections. In this embodiment, the method of forming the annular flow channels 104 is not specifically limited.

[0062] In practical applications, an inlet can be provided on the annular flow channel 104 located at the bottom of the annular body 10, and the inlet is connected to the inlet pipe 11. An outlet can be provided on the annular flow channel 104 located at the top of the annular body 10, and the outlet is connected to the outlet pipe 12. External cooling water can enter the bottom annular flow channel 104 through the inlet via the inlet pipe 11, flow through all the annular flow channels 104, and then flow out through the outlet at the top into the outlet pipe 12, thus achieving heat conduction.

[0063] In the above embodiments of this application, the water flow velocity near the inner wall of the annular flow channel is adjusted by adjusting the ratio of the first height to the first width of the annular flow channel, thereby adjusting the heat exchange efficiency of the heat exchanger near the crystal rod side. The ratio of the first height H1 to the first width W1 of the annular flow channel 104 is defined as the aspect ratio of the annular flow channel. Experimental data shows that, given a fixed inlet water pressure of the heat exchanger, in terms of heat exchange effect, the ratio of the axial height to the radial width of the flow channel in a conventional heat exchanger scheme is close to 1:1, and the overall pulling speed of the single-crystal silicon rod is approximately 107 mm / h. When the aspect ratio of the annular flow channel 104 of the heat exchanger described in this application reaches 3:1, the overall pulling speed of the single-crystal silicon rod can reach 112 mm / h; when the aspect ratio is further increased to 20:1, the overall pulling speed of the single-crystal silicon rod reaches 114 mm / h. It can be seen that the larger the ratio of the first height H1 to the first width W1 of the annular flow channel 104, the faster the pulling speed of the single crystal silicon rod.

[0064] Furthermore, in practical applications, experiments in this embodiment have shown that, under a given water pressure at the heat exchanger inlet, a larger ratio of the first height H1 to the first width W1 results in higher heat exchange efficiency, but also greater resistance to water flow and a reduced flow velocity within the annular flow channel of the heat exchanger. Therefore, to meet the required heat exchange efficiency and flow velocity requirements, the water pressure at the heat exchanger inlet can be increased to satisfy the required flow velocity at the heat exchanger outlet, thereby expanding the applicable range of the first height H1 to first width W1 ratio. Thus, by adjusting the water pressure at the heat exchanger inlet, while meeting the crystal growth rate requirements, this application determines a first height H1 to first width W1 ratio of 4:3-200:1.

[0065] Furthermore, based on the above embodiments and some other optional embodiments, the ratio of the first height H1 to the first width W1 is 2:1-50:1. While meeting the requirements of existing hydraulic equipment, the ratio of the first height H1 to the first width W1 is controlled within a reasonable range to ensure that the heat exchanger has a better heat exchange effect and to improve the pulling speed of the single-crystal silicon rod. Specifically, as an optional implementation, the cross-sectional shape of the annular flow channel is rectangular; the ratio of the first height H1 to the first width W1 of the annular flow channel 104 is defined as the aspect ratio of the annular flow channel. Within the requirements of existing hydraulic equipment, the reasonable range of the aspect ratio is confirmed by adjusting it. Specific experimental analysis is as follows:

[0066] In this embodiment, for example, when the water pressure at the heat exchanger inlet is 0.3 MPa: when the aspect ratio of the annular flow channel is 1:1 (i.e., a conventional heat exchanger), the overall pulling speed of the monocrystalline silicon rod reaches 110 mm / h; when the aspect ratio of the annular flow channel is 4:3, the overall pulling speed of the monocrystalline silicon rod reaches 111 mm / h; when the aspect ratio of the annular flow channel is 2:1, the overall pulling speed of the monocrystalline silicon rod reaches 111.5 mm / h; when the aspect ratio of the annular flow channel is 20:1, the overall pulling speed of the monocrystalline silicon rod reaches 114 mm / h; when the aspect ratio of the annular flow channel is 50:1, the overall pulling speed of the monocrystalline silicon rod reaches 114 mm / h.

[0067] When the water pressure at the heat exchanger inlet is 1 MPa: the overall pulling speed of the monocrystalline silicon rod reaches 111.5 mm / h when the aspect ratio of the annular flow channel is 4:3; 112 mm / h when the aspect ratio of the annular flow channel is 2:1; 116 mm / h when the aspect ratio of the annular flow channel is 20:1; and 116 mm / h when the aspect ratio of the annular flow channel is 50:1.

[0068] The data above shows that, with a constant inlet water pressure in the heat exchanger, a larger aspect ratio of the annular flow channel results in higher heat exchange efficiency and a faster crystal rod pulling speed. However, once the aspect ratio reaches a certain range, the increase in pulling speed becomes limited or low. Furthermore, with a constant aspect ratio of the annular flow channel, a higher inlet water pressure in the heat exchanger leads to higher heat exchange efficiency and a faster crystal rod pulling speed. Therefore, considering the effect on increasing the crystal rod pulling speed and the existing water pressure equipment in single crystal furnaces, the aspect ratio of the annular flow channel in this embodiment is selected as 2:1-50:1.

[0069] Optionally, in practical applications, when adjusting the ratio of the first height H1 to the first width W1 of the annular flow channel 104, it is necessary to consider the manufacturability of the heat exchanger while achieving a better heat dissipation effect. For example, if the first width W1 of the annular flow channel 104 is too small, it is difficult to control the gap width between the inner wall 101 and the outer wall 102, and the machining difficulty of the annular body 10 is also greater. In specific applications, considering manufacturability, the first width of the annular flow channel 104 can preferably be 7 mm to 20 mm.

[0070] It should be noted that in specific applications, when the cross-sectional area of ​​the water flow in the annular channel 104 is fixed, any increase in the first height H1 of the annular channel 104 requires a corresponding adjustment of the first width W1. If the cooling medium flow rate allows, the first height H1 of the annular channel 104 can also be increased directly without adjusting the first width W1; this embodiment does not limit this approach.

[0071] Specifically, as one embodiment, as shown in Figure 2, the annular body 10 may include a first segment and a second segment connected to each other; the inner diameters of the first segment and the second segment may be the same or different, and the second segment is closer to the liquid surface during crystal growth compared to the first segment. Specifically, in this embodiment, the first segment is a variable diameter segment, and the second segment is a constant diameter segment; of course, the inner diameter of the second segment can also vary, and this embodiment does not impose a specific limitation. In the constant diameter segment, the cross-sectional shape of the annular flow channel 104 is rectangular; in the variable diameter segment, the cross-sectional shape of part of the annular flow channel 104 is parallelogram.

[0072] As shown in Figure 2, along the axial direction y of the annular body 10, the cross-sectional shape of the annular flow channel 104 is rectangular or parallelogram. Furthermore, the long side of the rectangle or parallelogram is parallel to or slightly inclined relative to the axial direction y of the annular body 10, while the short side is radially x of the annular body 10. That is, the first height H1 of the annular flow channel 104 is greater than the first width W1.

[0073] Furthermore, based on the above embodiments or other optional embodiments, referring to FIG4, a schematic cross-sectional structure of another annular flow channel according to an embodiment of this application is shown. As shown in FIG4, a turbulence structure is also provided in the annular flow channel 104. The turbulence structure can be used to increase the local flow velocity of the cooling medium on the inner wall 101, thereby increasing the heat exchange efficiency of the cooling medium on the inner wall 101 and removing the heat from the inner wall 101 more quickly.

[0074] In practical applications, the turbulence structure disposed within the annular flow channel 104 can be used to change the local flow velocity of the cooling medium within the annular flow channel, thereby adjusting the heat exchange efficiency of the cooling medium. Since the annular flow channel 104 primarily removes the latent heat of crystallization of the single-crystal silicon rod through heat exchange on the inner wall 101 of the cooling medium, the flow velocity of the cooling medium on one side of the inner wall 101 can be increased by the turbulence structure to remove the latent heat of crystallization generated by the single-crystal silicon rod more quickly.

[0075] As shown in Figure 4, the turbulence structure includes a protrusion 105 on the outer wall 102 near the annular flow channel 104, protruding towards the inner wall 101. When the cooling medium flows through the protrusion 105, the protrusion 105 can squeeze the cooling medium towards the inner wall 101, thereby increasing the flow velocity of the cooling medium near the inner wall 101. This further enhances the scouring effect of the cooling medium on the inner wall 101, removing surface bubbles generated by high temperature on the inner wall 101, further reducing interfacial thermal resistance and improving heat exchange efficiency.

[0076] The protrusion 105 on the outer side wall 102 of this application compresses the cooling medium to the side closer to the inner side wall 101, reducing the heat exchange efficiency of the outer side wall and thus reducing the energy consumption of the heat exchanger to the external heat field. Therefore, this application provides a turbulence structure on the outer side wall, which increases the heat exchange efficiency of the inner side wall while reducing the heat exchange efficiency of the outer side wall, improving the heat exchange between the heat exchanger and the furnace and reducing energy consumption.

[0077] Optionally, as shown in Figure 4, the distance between the inner and outer walls of the annular body is defined as the thickness W2 of the annular flow channel; the maximum distance of the protrusion 105 along the direction from the outer wall to the inner wall is the height H2 of the protrusion, and the height H2 is 30%-95% of the thickness W2, so as to control the protrusion 105 within a reasonable range. In this way, the cooling medium can be squeezed to the inner wall 101, increasing the flow velocity of the cooling medium on the inner wall 101 side, and the cooling medium can pass smoothly through the gap between the protrusion 105 and the inner wall 101. When the turbulence structure is set in the straight section (i.e., the constant diameter section) of the heat exchanger, the height of the protrusion is the maximum distance the protrusion extends from the outer wall to the inner wall along the direction perpendicular to the inner or outer wall; the thickness of the annular flow channel is the first width W1. When the turbulence structure is set in the variable diameter section of the heat exchanger, the cross-section of the annular flow channel is a parallelogram, perpendicular to the inner or outer wall of the annular body, and the distance between the inner and outer walls is the thickness of the annular flow channel; along the direction perpendicular to the inner or outer wall of the annular body, the maximum distance that the protrusion 105 extends from the outer wall toward the inner wall is the height of the protrusion.

[0078] For example, the height H2 is 30%, 55%, 82%, or 95% of the thickness W2, etc., but this application does not limit this.

[0079] Optionally, the surface of the outer wall near the annular flow channel 104 is designated as the first surface, the area of ​​the first surface is designated as the first area, and the total area of ​​the protrusions 105 on the first surface is designated as the second area. The ratio of the second area to the first area is greater than 1 / 3. Calculations using fluid compression and converging flow models show that the fluid within the annular flow channel 104 exhibits a significant tendency to converge after passing the protrusions 105, thereby generating the desired local turbulence and further enhancing the heat exchanger's heat transfer efficiency.

[0080] Referring to FIG5, a schematic diagram of the distribution of protrusions on the side of the outer wall near the annular flow channel according to an embodiment of the present application is shown. As shown in FIG5, there are multiple protrusions 105, which are arranged in rows along the circumference of the outer wall 102 to form protrusion groups, and at least two of the protrusion groups are arranged along the axial direction y of the annular body 10; in two adjacent protrusion groups, the protrusions 105 in one protrusion group are at least partially located between adjacent protrusions 105 in the other protrusion group, so that the cooling medium in the annular flow channel 104 can flow in the direction indicated by the arrow in FIG5, thereby achieving the effect of increasing the local flow velocity of the cooling medium.

[0081] For example, as shown in FIG5, in two adjacent protrusion groups a and b, the protrusions 105 in protrusion group a and protrusions 105 in protrusion group b are offset along the axial direction y of the annular body 10, and the protrusions 105 in protrusion group a extend at least partially along the axial direction y to the protrusions 105 in protrusion group b.

[0082] Optionally, the surface of the protrusion 105 facing the inner wall 101 is a spherical surface, and the diameter of the spherical surface is 5 mm to 70 mm. Due to the guiding effect of the spherical surface, the flow resistance of the cooling medium flowing through the protrusion 105 can be reduced, thereby further increasing the flow velocity of the cooling medium scouring the inner wall 101 and improving the heat exchange effect of the cooling medium on the inner wall 101.

[0083] In practical applications, when the diameter of the spherical surface is less than 5 mm, the protrusion 105 will increase the flow resistance of the fluid. When the diameter of the spherical surface is greater than 70 mm, the protrusion 105 will not be able to effectively compress the water flow. Therefore, it is preferable that the diameter of the spherical surface is between 5 mm and 70 mm.

[0084] It should be noted that in practical applications, the surface of the protrusion 105 facing the inner wall 101 can also be an inclined plane, etc., and this application embodiment does not specifically limit this.

[0085] In some optional embodiments of this application, the protrusion 105 and the outer wall 102 can be integrally formed, that is, the protrusion 105 and the outer wall 102 can be formed by an integral molding process to achieve a reliable connection between the protrusion 105 and the outer wall 102. Alternatively, the protrusion 105 and the outer wall 102 can also be separate structures, so that the structure of each individual protrusion 105 and the outer wall 102 is relatively simple, thereby simplifying the processing technology of both the protrusion 105 and the outer wall 102.

[0086] Optionally, when the protrusion 105 and the outer wall 102 are separate structures, the protrusion 105 is bonded to the outer wall 102, or the protrusion 105 is welded to the outer wall 102, or the protrusion 105 is connected to the outer wall 102 by fasteners, so as to achieve a reliable connection of the protrusion 105 on the outer wall 102. Specifically, the fasteners may include, but are not limited to, at least one of screws, bolts, and studs, and the embodiments of this application do not make special limitations in this regard.

[0087] Specifically, as one implementation, the annular body 10 may include a first segment and a second segment connected to each other; the inner diameters of the first segment and the second segment are different, and the second segment is further away from the inlet pipe and the outlet pipe than the first segment. In this embodiment, the first segment is a variable diameter segment, and the second segment is a constant diameter segment; of course, the inner diameter of the second segment can also vary, and this embodiment does not specifically limit it. In this embodiment, the turbulence-inducing structure is disposed in the annular flow channel 104 of the constant diameter segment of the annular body 10. Since the shape of the constant diameter segment is relatively regular, the turbulence-inducing structure can be disposed in the constant diameter segment, which can greatly improve the manufacturability of the turbulence-inducing structure. Of course, in specific applications, the turbulence-inducing structure can also be disposed in the annular flow channel 104 of the variable diameter segment of the annular body 10 according to actual needs. This application embodiment does not specifically limit the placement of the turbulence-inducing structure.

[0088] Experimental data shows that by controlling the first height H1 and the first width W1 of the annular flow channel 104, with the ratio of the first height H1 to the first width W1 being 4:3-200:1, and by setting the turbulence structure within the annular flow channel 104, the heat exchange capacity of the heat exchanger can be significantly improved. Compared to traditional heat exchangers, the heat exchanger described in this embodiment can increase the pulling speed of the single-crystal silicon rod by 10%-20%.

[0089] Furthermore, based on the above embodiments or other optional embodiments, the annular body has an inner wall close to the channel and an outer wall away from the channel; a recess is provided on the inner wall of the annular body, and the opening of the recess faces the channel. Since the opening of the recess faces the crystal channel, the inner wall of the heat exchanger at the recess protrudes towards the outer wall, thereby increasing the contact area of ​​the cooling medium within the annular flow channel at the recess, which can improve the heat exchange efficiency. In addition, the recess increases the surface area of ​​the inner wall of the heat exchanger, increasing the heat exchange area between the heat exchanger and the channel. Therefore, providing a recess on the inner wall of the heat exchanger can also improve the heat exchange efficiency.

[0090] In summary, the heat exchanger described in the embodiments of this application may include at least the following advantages:

[0091] In this embodiment, the annular body is provided with annular flow channels distributed along the axial direction, and two adjacent annular flow channels are connected. The height of the annular flow channel along the axial direction of the annular body is a first height, and the width of the annular flow channel along the radial direction of the annular body is a first width. The ratio of the first height to the first width is 4:3-200:1, to increase the aspect ratio of the annular flow channel. When the cooling medium flows through the annular flow channel, the contact area between the turbulent portion of the cooling medium and the annular flow channel can be increased, improving heat exchange efficiency. This improves the overall heat dissipation capacity of the heat exchanger, significantly increases the longitudinal temperature gradient of the single-crystal silicon rod, and thus increases the pulling speed of the single-crystal silicon rod.

[0092] This application also provides a single crystal furnace, which specifically includes the heat exchanger described in any of the above embodiments.

[0093] Specifically, the single-crystal furnace may further include: a furnace body; a crucible disposed within the furnace body for containing silicon material; a heater disposed within the furnace body for heating the silicon material in the crucible into molten silicon to grow a single-crystal silicon rod from the molten silicon; and a heat exchanger fitted over the single-crystal silicon rod. The heat exchanger has multiple axially distributed annular channels within its annular body, with adjacent channels connected. The height of the annular channel along the axial direction of the annular body is a first height, and the width of the annular channel along the radial direction of the annular body is a first width. The first height is greater than the first width to increase the aspect ratio of the annular channel. When the cooling medium flows through the annular channel, the contact area between the turbulent portion of the cooling medium and the annular channel can be increased, improving heat exchange efficiency. This improves the overall heat dissipation capacity of the heat exchanger, significantly increasing the longitudinal temperature gradient of the single-crystal silicon rod, thereby increasing the pulling speed of the single-crystal silicon rod.

[0094] Furthermore, this application also discloses a heat exchanger, as shown in Figures 1 to 3. The heat exchanger includes: an annular body 10, a hollow portion near the inner side of the annular body 10 serving as a channel 100 for inserting a single-crystal silicon rod, and a plurality of annular flow channels 104 distributed along the axial direction y of the annular body within the annular body 10, with adjacent annular flow channels 104 connected; an inlet pipe 11 and an outlet pipe 12, the inlet pipe 11 and the outlet pipe 12 respectively connected to at least one annular flow channel 104. Also, as shown in Figures 7-8, the heat exchanger further includes a tip section 2, and the annular body includes a cylindrical section 1; the cylindrical section 1 and the tip section 2 are arranged along a first direction; the cylindrical section 1 and the tip section 2 are fixedly connected and remain relatively stationary. The cylindrical segment 1 includes a first inner wall 1011 and a first outer wall 1012, and a first heat exchange cavity 1014 is formed between the first inner wall 1011 and the first outer wall 1012; along the first direction, the orthographic projection of the outer peripheral surface of the tip segment 2 is located inside the orthographic projection of the first outer wall 1012; the distance between the first inner wall 1011 and the first outer wall 1012 is d1, and the distance between the outer peripheral surface of the tip segment 2 and the inner peripheral surface of the tip segment 2 is d2, where d1 ≥ 1.2d2.

[0095] In this embodiment, the upper end of the tip segment 2 is close to the cylindrical segment 1, and the lower end of the tip segment 2 is far from the cylindrical segment 1. Positioning the tip segment 2 at the bottom of the cylindrical segment 1 brings it closer to the solid-liquid interface, thereby shortening the longitudinal distance between the heat exchanger and the solid-liquid interface. This facilitates increasing the longitudinal temperature gradient of the crystal and improving the crystal growth rate. Along the first direction, the orthographic projection of the outer peripheral surface of the tip segment 2 falls inside the orthographic projection of the outer wall of the cylindrical segment 1. This reduces both the longitudinal distance of the bottom of the tip segment 2 from the crystallization region and the lateral distance of the tip segment 2, i.e., the lateral distance between the outer wall of the tip segment 2 and the crystallization region. This reduces the influence of the tip segment 2 on the temperature of the solid-liquid interface outside the crystallization region, improves the temperature stability of the solid-liquid interface, and enables high-quality growth.

[0096] Optionally, the distance between the first inner wall 1011 and the first outer wall 1012 of the cylindrical segment 1 is d1, and the distance between the outer peripheral surface and the inner peripheral surface of the tip segment 2 is d2, where d1 ≥ 1.2d2. The outer peripheral surface of the tip segment 2 is the outer peripheral surface of the second outer wall 2022 of the tip segment 2; the inner peripheral surface of the tip segment 2 is the inner peripheral surface of the second inner wall 2021 of the tip segment 2, specifically the inner peripheral surface closer to the crystal rod.

[0097] In this embodiment, by defining the relationship between the spacing d1 and d2, the overall thickness of the tip section 2 can be made thinner than that of the cylindrical section 1, reducing the impact on the temperature of the solid-liquid interface outside the crystallization region. Experiments have verified that d1 ≥ 1.2d2 ensures increased drawing speed while reducing the impact on the temperature of the solid-liquid interface outside the crystallization region.

[0098] As some alternative implementations, the tip section 2 can be a rotating body structure with a cavity structure, or a rotating body structure with a heat exchange tube inside, or a solid cooling structure without a cavity inside; by defining the relationship between the spacing d1 and d2, the tip section 2 can be made thinner than the overall thickness of the cylindrical section 1.

[0099] In this embodiment, the tip segment 2 and the cylindrical segment 1 can be sequentially arranged along a first direction, with the tip segment 2 located at the bottom of the cylindrical segment 1. The tip segment 2 and the cylindrical segment 1 can be fixedly connected by splicing, for example, by welding, riveting, or other methods, meaning the heat exchanger can be a split structure. Alternatively, the tip segment 2 and the cylindrical segment 1 can be integrally formed, meaning the heat exchanger can also be an integral structure, further improving the structural stability of the heat exchanger. The cylindrical segment 1 and the tip segment 2 remain relatively stationary under any circumstances. The materials of both the tip segment 2 and the cylindrical segment 1 can be stainless steel, copper, or aluminum alloy, etc.

[0100] In this embodiment of the application, since the cylindrical section 1 is connected to the tip section 2, the tip section 2 can be closer to the solid-liquid interface of crystal growth, that is, the longitudinal distance between the bottom of the tip section 2 and the crystallization region is small. The tip section 2 can transfer heat to the cylindrical section 1, thereby increasing the longitudinal temperature gradient of the crystal and thus increasing the crystal growth rate.

[0101] In this embodiment, the axial direction of the cylindrical segment 1 is defined as the first direction, which is consistent with the crystal growth direction, as shown in Figure 8. The first direction is the vertical direction, i.e., the longitudinal direction. Since the orthographic projection of the outer peripheral surface of the tip segment 2 falls inside the orthographic projection of the outer wall of the cylindrical segment 1 along the first direction, that is, along the direction away from the cylindrical segment 1, the lateral distance between the outer peripheral surface of the tip segment 2 and the crystallization region becomes smaller or within a limited distance range. This can reduce the lateral temperature gradient at the solid-liquid interface and improve the temperature stability of the solid-liquid interface. In the actual crystal pulling process, the area affected by the heat absorption of the outer peripheral surface of the tip segment 2 is mainly the melt surface area on the solid-liquid interface surrounding the crystallization region. Temperature fluctuations in this area affect temperature fluctuations in the crystallization region, thereby affecting the breakage rate of crystal growth. Therefore, in this embodiment, by controlling the longitudinal distance between the bottom of the tip segment 2 and the crystallization region and the lateral distance between the outer peripheral surface of the tip segment 2 and the crystallization region, the pulling speed can be increased while reducing the impact on crystal growth.

[0102] The heat exchanger described in this embodiment is applied in a thermal environment to provide heat exchange during crystal pulling, or it can be applied in other scenarios requiring heat exchange. Specifically, the heat exchanger can be used in the photovoltaic and semiconductor industries. This embodiment only uses the application of the heat exchanger in a thermal field device as an example to increase the longitudinal temperature gradient of the crystal, improve the crystal growth rate, and simultaneously ensure the stability of the solid-liquid interface, ensuring high-quality and rapid crystal growth and reducing production costs.

[0103] Based on the above embodiments or in some other optional embodiments of this application, d1 is 30-45mm and d2 is 4-25mm. Wherein, d1 is the distance between the two opposing surfaces of the first inner wall 1011 and the first outer wall 1012; d2 is the distance between the outer peripheral surface of the tip segment 2 and the inner peripheral surface of the tip segment 2.

[0104] In this embodiment, the cylindrical section 1 includes a first inner wall 1011 and a first outer wall 1012, and a first heat exchange cavity 1014 between the first inner wall 1011 and the first outer wall 1012. The distance d1 between the first inner wall 1011 and the first outer wall 1012 can be 30-45mm to effectively ensure the heat exchange capacity of the cylindrical section 1.

[0105] Specifically, the distance d1 between the first inner wall 1011 and the first outer wall 1012 is the thickness of the first heat exchange cavity 1014, that is, the radial dimension of the first heat exchange cavity 1014 along the heat exchanger, which is related to the flow rate of the heat exchange medium. The thickness of the first heat exchange cavity 1014 can be 28mm, 30mm, 35mm, 36mm, 43mm, 45mm, etc.

[0106] Specifically, as an optional implementation, the tip segment 2 is a heat-conducting component with no internal cavity or only a small cavity. The distance between the outer peripheral surface and the inner peripheral surface of the tip segment 2 is d2. By limiting the distance d2, on the one hand, the tip segment 2 can be avoided from being too thin, which is not conducive to the control of the axial temperature gradient. On the other hand, the radial thickness of the tip segment 2 can be avoided from being too thick, which is not conducive to the control of the transverse temperature gradient.

[0107] Specifically, as an optional implementation, the tip segment 2 can be a rotating structure with a cavity structure, specifically including a second inner wall 2021 and a second outer wall 2022, and a second heat exchange cavity 2024 between the second inner wall 2021 and the second outer wall 2022. The distance d2 between the outer peripheral surface and the inner peripheral surface of the tip segment 2 can be the sum of the thicknesses of the second heat exchange cavity 2024, the second inner wall 2021, and the second outer wall 2022. The thickness of the second heat exchange cavity 2024 is the radial dimension of the second heat exchange cavity 2024 along the heat exchanger. Specifically, the second inner wall 2021 and the second outer wall 2022 are made of a metal thermally conductive material such as stainless steel. The thickness of the second inner wall 2021 and the second outer wall 2022 can be 2-5 mm, preferably 3 mm; the radial dimension of the second heat exchange cavity 2024 along the heat exchanger is 3-15 mm, preferably 6 mm. Based on the dimensions of the second inner wall 2021 and the second outer wall 2022, the radial thickness of the second heat exchange cavity 2024 can be limited by limiting d1 to be at least greater than or equal to 1.2 times d2. Of course, d1 can also be 1.5 times, 2 times, 2.5 times, 3 times, etc. of d2.

[0108] When the tip section 2 is a rotating structure with a cavity, considering the combined effects on the solid-liquid interface and cooling water, if the second heat exchange cavity 2024 is too thin, it will not be conducive to the passage of cooling water and will easily become blocked. If the second heat exchange cavity 2024 is too thick, it will cause the cooling water flow rate to decrease, which will not be conducive to heat exchange. Moreover, it will lead to a larger radial temperature gradient, resulting in excessive fluctuations in the solid-liquid interface, which will affect the crystal growth success rate, especially the crystal growth in the shoulder stage.

[0109] Specifically, in this embodiment, the distance between the outer peripheral surface and the inner peripheral surface of the tip segment 2 is limited to 4-25 mm to effectively ensure the heat exchange capacity of the tip segment 2 while reducing the impact on the radial temperature of the solid-liquid interface. Specifically, after removing the thickness of the second inner wall 2021 and the second outer wall 2022, the distance between the opposing surfaces of the second inner wall 2021 and the second outer wall 2022 is limited, i.e., the thickness of the second heat exchange cavity 2024 is controlled to be 3-15 mm. This effectively ensures the heat exchange capacity of the tip segment 2 while reducing the impact on the radial temperature of the solid-liquid interface. The thickness of the second heat exchange cavity 2024 can be 3 mm, 4 mm, 7 mm, 11 mm, 12 mm, 15 mm, etc.

[0110] In this embodiment, the first heat exchange channel 1013 is used to pass through and cool the crystal during the growth process, thereby increasing the crystal growth rate. The tip segment 2 can transfer heat to the first heat exchange chamber 1014, which can effectively ensure the absorption of the latent heat of crystallization generated during crystal growth.

[0111] Specifically, the first inner wall 1011 of the cylindrical section 1 is the first inner layer component, and the first outer wall 1012 of the cylindrical section 1 is the first outer layer component; the first outer layer component is disposed outside the first inner layer component; that is, the cylindrical section 1 can be constructed from two layers of components, and the first inner layer component can enclose to form a first heat exchange channel 1013; a first heat exchange cavity 1014 can be formed between the first inner layer component and the first outer layer component.

[0112] Specifically, as shown in Figure 10, the first outer layer component can be sleeved on the outside of the first inner layer component, and the first outer layer component and the first inner layer component can be spaced apart to utilize the gap between the first inner layer component and the first outer layer component to prepare the first heat exchange cavity 1014. The first heat exchange cavity 1014 can be filled with a heat exchange medium, which can be a liquid or a gas, etc. In this embodiment, the heat exchange medium is cooling water as an example for illustration, and other situations can be set up with reference to this.

[0113] Specifically, both the first inner layer component and the first outer layer component can be annular structures, and the first inner layer component and the first outer layer component can be evenly spaced, so that the first heat exchange cavity 1014 is a channel of equal thickness, and the thickness of the first heat exchange cavity 1014 is the dimension along the radial direction of the heat exchanger.

[0114] Specifically, the cross-sectional shape of the cylindrical section 1 along the radial direction of the heat exchanger can be an annular shape, and the cross-sectional shape of the first heat exchange channel 1013 along the radial direction of the heat exchanger can be circular. The specific design can be based on the shape of the crystal.

[0115] Optionally, as shown in Figures 7 and 8, the heat exchanger may further include an inlet pipe 11 and an outlet pipe 12; both the inlet pipe 11 and the outlet pipe 12 are connected to the side of the cylindrical section 1 away from the tip section 2; both the inlet pipe 11 and the outlet pipe 12 are connected to the first heat exchange chamber 1014.

[0116] In this embodiment, heat exchange medium can be injected into the first heat exchange chamber 1014 through the water inlet pipe 11, and heat exchange medium discharged from the first heat exchange chamber 1014 can be received through the water outlet pipe 12.

[0117] Specifically, the inlet pipe 11 is used to supply the heat exchange medium, and the outlet pipe 12 is used to discharge the heat exchange medium. The flow rate of the heat exchange medium in the first heat exchange chamber 1014 can be further increased by pressurizing the heat exchange medium. In this embodiment, in addition to the cylindrical section 1 and the pointed section 2, the heat exchanger may also include a conical section at the upper part of the cylindrical section 1, and the inlet pipe 11 and the outlet pipe 12 are connected to the cylindrical section through the conical section.

[0118] Specifically, the latent heat of crystallization generated during crystal growth is transferred to the second inner wall 2021 of the tip segment 2 through radiation energy, and then conducted to the cooling water. The cooling water carries away the heat during its flow, thereby cooling the crystal.

[0119] Optionally, the first heat exchange chamber 1014 can be filled with medium channels. For example, a spiral channel can be arranged in the first heat exchange chamber 1014, allowing cooling water to enter the bottom of the cylindrical section 1 through the inlet pipe 11, circulate in the spiral channel, and finally be discharged through the outlet pipe 12. This can increase the flow path of the heat exchange medium and improve the heat exchange effect. Alternatively, the first heat exchange chamber 1014 can also be arranged with multiple spaced sub-channels, with adjacent sub-channels being interconnected.

[0120] Based on the above embodiments or in some other optional embodiments of this application, the tip segment 2 may include a second inner wall 2021 and a second outer wall 2022; the outer wall of the tip segment 2 is the second outer wall 2022, which is disposed outside the second inner wall 2021; the second inner wall 2021 surrounds and forms a second heat exchange channel 2023; the second heat exchange channel 2023 and the first heat exchange channel 1013 are connected along the first direction; a second heat exchange cavity 2024 is provided between the second inner wall 2021 and the second outer wall 2022.

[0121] In this embodiment, the first heat exchange channel 1013 and the second heat exchange channel 2023 are connected to each other along the first direction, and can be used to pass through the grown crystal to facilitate heat exchange with the crystal. A second heat exchange cavity 2024 is provided between the second inner wall 2021 and the second outer wall 2022, which can further improve the heat exchange capacity of the tip segment 2.

[0122] Optionally, the second inner wall 2021 is fixedly connected to the first inner wall 1011, and the second outer wall 2022 is fixedly connected to the first outer wall 1012, so as to realize the fixed connection between the cylindrical section 1 and the tip section 2.

[0123] Specifically, the second outer wall 2022 of the tip segment 2 is the second outer layer component, and the second inner wall 2021 is the second inner layer component. The second outer layer component can be disposed outside the second inner layer component, that is, the tip segment 2 can be constructed of inner and outer double-layer components; the second inner layer component can be enclosed to form a second heat exchange channel 2023, and a second heat exchange cavity 2024 can be formed between the second inner layer component and the second outer layer component.

[0124] Specifically, as shown in Figure 11, the second outer layer component can be sleeved on the second inner layer component; the second inner layer component surrounds and forms the second heat exchange channel 2023; the gap between the second inner layer component and the second outer layer component can be used to form the second heat exchange cavity 2024; the second heat exchange channel 2023 is used to pass through the grown crystal, so that the second inner layer component can be arranged around the crystal. In this way, the cooling water flowing in the second heat exchange cavity 2024 can also carry away some of the latent heat of crystallization, which can further improve the cooling capacity of the heat exchanger for the crystal.

[0125] Specifically, the tip section 2 is the part of the entire heat exchanger structure that is closest to the solid-liquid interface. During crystal growth, the second inner layer component can transfer a portion of the latent heat of crystallization to the second heat exchange chamber 2024, thereby rapidly removing the latent heat of crystallization during crystal growth and increasing the crystal pulling speed.

[0126] This application embodiment only uses the heat exchanger as an example of a rotating body for illustration, that is, the cross-sectional shape of the first heat exchange channel 1013 and the second heat exchange channel 2023 is circular, so as to facilitate the insertion into the crystal and avoid interfering with the growth of the crystal.

[0127] Furthermore, the distance between the first inner wall 1011 and the first outer wall 1012 is greater than the distance between the second inner wall 2021 and the second outer wall 2022. This results in a smaller lateral distance (i.e., a smaller radial distance) between the outer wall of the tip segment 2 and the crystallization region. This facilitates reducing the lateral temperature gradient (i.e., the radial temperature gradient) at the solid-liquid interface, improving the temperature stability of the solid-liquid interface, and ensuring high-quality crystal growth. In this embodiment, by adjusting the distance between the first inner wall 1011 and the first outer wall 1012 to be greater than the distance between the second inner wall 2021 and the second outer wall 2022, the heat transfer capacity of the tip segment 2 perpendicular to the first direction is reduced, thereby reducing the impact on the lateral temperature gradient at the solid-liquid interface.

[0128] Specifically, the longitudinal distance between the bottom of the tip segment 2 and the crystallization region decreases, and the lateral dimension of the tip segment 2 decreases when it approaches the crystallization region. This can increase the longitudinal temperature gradient of the crystal, while keeping it as far away from the solid-liquid interface outside the crystallization region as possible, thereby reducing the radial temperature gradient of the solid-liquid interface.

[0129] Specifically, the tip section 2 can be located below the cylindrical section 1, which facilitates shortening the distance between the heat exchanger and the solid-liquid interface in the first direction, thereby reducing the longitudinal distance between the heat exchanger and the crystallization region and increasing the longitudinal temperature gradient of the crystal. The distance from the tip section 2 to the solid-liquid interface is negatively correlated with the crystal growth rate; the smaller the distance, the greater the longitudinal temperature gradient of the crystal and the higher the crystal growth rate.

[0130] Based on the above embodiments or in some other optional embodiments of this application, the inner circumferential surface of the second inner wall 2021 is coplanar with the inner circumferential surface of the first inner wall 1011. Specifically, the second inner wall 2021 and the first inner wall 1011 can both be cylindrical structures and can be integrally formed into a single cylindrical structure.

[0131] Optionally, the second heat exchange chamber 2024 is connected to the flow channels respectively provided in the first heat exchange chamber 1014. Specifically, the first heat exchange chamber 1014 and the second heat exchange chamber 2024 are connected, so that the first heat exchange chamber 1014 and the second heat exchange chamber 2024 can be circulated with the same cooling medium, which can improve the convenience of circulating the cooling medium.

[0132] Optionally, the second heat exchange chamber 2024 is not connected to the flow channels respectively provided in the first heat exchange chamber 1014. Specifically, the first heat exchange chamber 1014 and the second heat exchange chamber 2024 can also be set independently, so that the first heat exchange chamber 1014 and the second heat exchange chamber 2024 can be circulated with different cooling media, which facilitates the adjustment of the heat exchange capacity of the cylindrical section 1 and the tip section 2 respectively. Of course, the first heat exchange chamber 1014 and the second heat exchange chamber 2024 can also be circulated with the same cooling medium.

[0133] Based on the above embodiments or in some other optional embodiments of this application, the second outer wall 2022 may also include only a vertical wall 222, the upper end of which is directly connected to the first outer wall 1012 of the cylindrical section 1. The distance between the first inner wall 1011 and the first outer wall 1012 is d1, which is greater than or equal to 1.2 times the distance d2 between the outer peripheral surface of the vertical wall 222 and the inner peripheral surface of the second inner wall.

[0134] Based on the above embodiments or in some other optional embodiments of this application, the heat exchanger includes a transition section 4; the cylindrical section 1 is fixedly connected to the tip section 2 through the transition section 4. Along the first direction, the orthographic projection of the outer wall of the transition section 4 is located inside the orthographic projection of the first outer wall 1012, and the orthographic projection of the second outer wall 2022 is located inside the orthographic projection of the outer wall of the transition section 4.

[0135] In this embodiment, the outer wall of the transition section 4 includes a first conical wall 41, which is a cone. The transition section 4 includes at least one conical portion, and along the direction away from the cylindrical section 1, the heat exchange cavity can be compressed and narrowed, and the cooling water changes from laminar flow to turbulent flow. The upper end of the vertical wall 222 is connected to the first conical wall 41; the inner wall of the transition section 4 is coplanar with the second inner wall and has a cylindrical structure.

[0136] Specifically, the outer wall of the transition section 4 is a first conical wall 41, and the inner wall is a straight cylindrical wall. The orthographic projection of the outer wall of the transition section 4 is located inside the orthographic projection of the first outer wall 1012, and the orthographic projection of the second outer wall 2022 is located inside the orthographic projection of the outer wall of the transition section 4; this can reduce the influence on the transverse temperature gradient of the crystal surface.

[0137] Based on the above embodiments or in some other optional embodiments of this application, the second outer wall 2022 includes a vertical wall 222 and a second conical wall 223; the upper end of the vertical wall 222 is fixedly connected to the first outer wall 1012, and the lower end is fixedly connected to the second conical wall 223.

[0138] Specifically, the two ends of the vertical wall 222 are connected to the first conical wall 41 and the second conical wall 223, respectively; the end of the first conical wall 41 away from the vertical wall 222 is fixedly connected to the first outer wall 1012. Alternatively, the upper end of the vertical wall 222 is directly connected to the first outer wall 1012 of the cylindrical section 1, and the lower end is fixedly connected to the second conical wall 223.

[0139] Specifically, as shown in Figure 9, in this embodiment, the first conical wall 41, the vertical wall 222, and the second conical wall 223 are connected sequentially along the direction away from the cylindrical section 1. The diameter can first decrease, then remain unchanged, and then decrease again. That is, the closer the heat exchanger is to the solid-liquid interface, the smaller its lateral dimension, i.e., the smaller the lateral distance between the outer circumference of the heat exchanger and the crystallization region. This facilitates improving the temperature stability of the solid-liquid interface and ensuring high-quality crystal growth. Meanwhile, the vertical wall 222 serves as a transition region, and the thickness of the heat exchange cavity at the vertical wall 222 does not continuously decrease, ensuring the heat exchange capacity of the tip section 2. Specifically, the length of the vertical wall 222 along the first direction can be 7-20 mm. In this embodiment, the vertical wall 222 is connected between the first conical wall 41 and the second conical wall 223, which can also reduce the influence of the vertical wall 222 on the temperature of the solid-liquid interface.

[0140] Specifically, the bottom end of the second conical wall 223 is closer to the solid-liquid interface, which can increase the longitudinal temperature gradient. As it moves further away from the cylindrical section 1 and gets closer to the crystallization region of the crystal, the diameter of the second conical wall 223 becomes smaller and smaller, which can reduce the impact on the temperature outside the crystallization region in the solid-liquid interface and reduce the lateral temperature gradient of the solid-liquid interface.

[0141] Specifically, the extension lengths of the first conical wall 41, the vertical wall 222, and the second conical wall 223 in the first direction can be designed according to actual needs, and this application embodiment does not specifically limit this.

[0142] Specifically, as shown in Figure 9, the second inner wall 2021 extends along the first direction; the second conical wall 223 has an inclination angle with the first direction, the inclination angle θ being 45-80°. On the one hand, this can ensure the heat exchange effect of the tip section 2; on the other hand, it can reduce the temperature influence of the second conical wall 223 on the solid-liquid interface, reduce the radial temperature gradient of the solid-liquid interface, and improve the temperature stability of the solid-liquid interface.

[0143] Based on the above embodiments or in some other optional embodiments of this application, the length L of the tip segment 2 along the first direction is 7-40 mm. The tip segment 2 may only include the second inner wall and the vertical wall 222; or it may only include the second inner wall, the second conical wall 223, and the vertical wall 222; the heat exchanger may only include the cylindrical section 1 and the tip segment 2, or it may include the cylindrical section 1, the transition section 4, and the tip segment 2. The length of the vertical wall 222 of the heat exchanger along the first direction may be 7-40 mm; in the case of including the first conical wall 41 and the second conical wall 223, the vertical wall 222 may further be 5-20 mm.

[0144] Based on the above embodiments or in some other optional embodiments of this application, the inner surface of the first inner wall 1011 is provided with a first absorbing coating. The emissivity of the first absorbing coating is 0.8-0.95. In this way, under the reflection effect of the first absorbing coating, the cylindrical section 1 can better absorb radiation, thereby improving the heat exchange capacity of the heat exchanger and increasing the longitudinal temperature gradient of the crystal.

[0145] Specifically, the first absorbent coating can be obtained by salt bath treatment and high-temperature molten salt composite treatment of PQP.

[0146] Optionally, the first outer wall 1012 may be provided with a coating, the emissivity of which may be less than 0.5, resulting in a lower heat absorption efficiency of the first outer wall 1012. This reduces the influence of the first outer wall 1012 on the temperature of the solid-liquid interface and helps to reduce the radial temperature gradient of the solid-liquid interface. Furthermore, the first outer wall 1012 may be a polished surface with an emissivity of less than 0.5 to further reduce the heat absorption efficiency of the first outer wall 1012.

[0147] Optionally, the inner surface of the second inner wall 2021 is provided with a second absorption coating, the emissivity of which is 0.8-0.95. In this way, the tip segment 2 can better absorb radiation, thereby improving the heat exchange capacity of the heat exchanger.

[0148] Specifically, the second absorbent coating can be configured with reference to the first absorbent coating, which will not be described in detail in this embodiment.

[0149] Optionally, the second outer wall 2022 may be provided with a coating having an emissivity of less than 0.5, resulting in a lower heat absorption efficiency of the second outer wall 2022. This reduces the influence of the second outer wall 2022 on the temperature of the solid-liquid interface and helps to reduce the radial temperature gradient at the solid-liquid interface. Furthermore, the second outer wall 2022 may be a polished surface with an emissivity of less than 0.5 to further reduce the heat absorption efficiency of the second outer wall 2022.

[0150] Optionally, along the first direction, a third absorbent coating is provided at the end of the tip segment 2 away from the cylindrical segment 1, so that the end of the tip segment 2 away from the cylindrical segment 1 can generate a reflection in the molten silicon, thereby improving the convenience and reliability of the liquid collection port distance.

[0151] Specifically, the end of the tip segment 2 away from the cylindrical segment 1 is the bottom surface of the tip segment 2, which is the surface closest to the solid-liquid interface.

[0152] Specifically, the reflection image of the end of the tip segment 2 furthest from the cylindrical segment 1 in the molten silicon can be acquired by CCD, and the distance from the bottom of the tip segment 2 to the liquid outlet at the solid-liquid interface can be obtained through data processing. Applying a third absorption coating to the end of the tip segment 2 furthest from the cylindrical segment 1 can improve the accuracy of image acquisition. Specifically, the third absorption coating can be obtained through a blackening process.

[0153] Optionally, the emissivity of the third absorbing coating is greater than 0.2 to improve the image clarity of the reflection of the end of the tip segment 2 away from the cylindrical segment 1 in the molten silicon.

[0154] Optionally, if the CCD cannot acquire images, the crucible lifting speed V = crystal pulling speed * crucible root coefficient can be calculated using the crucible root ratio method.

[0155] The heat exchanger described in the embodiments of this application has at least the following advantages:

[0156] In this embodiment, one end of the tip segment is close to the cylindrical segment, and the other end is away from the cylindrical segment. The tip segment is positioned at the bottom of the cylindrical segment, bringing it closer to the solid-liquid interface. This shortens the distance between the heat exchanger and the solid-liquid interface, facilitating a greater longitudinal temperature gradient in the crystal and increasing the crystal growth rate. Along the first direction, the orthographic projection of the outer peripheral surface of the tip segment 2 is located inside the orthographic projection of the first outer wall 1012. This reduces both the longitudinal distance between the bottom of the tip segment and the crystallization region and the lateral distance between the outer wall of the tip segment and the crystallization region. This reduces the influence of the tip segment on the temperature of the solid-liquid interface outside the crystallization region, lowers the influence of the outer wall of the tip segment on the lateral temperature gradient of the solid-liquid interface, and improves the temperature stability of the solid-liquid interface, enabling high-quality crystal growth.

[0157] On the other hand, this application also discloses a thermal field device, which may specifically include a thermal screen 200 and the aforementioned heat exchanger; the thermal screen 200 is sleeved on the outside of the heat exchanger.

[0158] Specifically, the heat shield 200 provides insulation, while the heat exchanger provides cooling.

[0159] Optionally, the heat shield 200 may include an insulation element 230 and an outer liner 220; the outer liner 220 is fitted over the heat exchanger; along the first direction, the insulation element 230 is disposed between the cylindrical section 1 and the outer liner 220; the insulation element 230 is disposed opposite to the second outer wall 2022 of the tip section 2, and a step is provided on the side of the insulation element 230 near the second outer wall 2022, the surface shape of the step matching the shape of the second outer wall 2022, so that the structure of the insulation element 230 and the tip section 2 are adapted, and the insulation element 230 can provide a good heat insulation effect for the tip section 2, which is beneficial to reducing the radial temperature gradient at the solid-liquid interface. Of course, the surface of the insulation element 230 near the second outer wall 2022 can also be set as a surface of other shapes, as long as it can match the outer surface shape of the second outer wall 2022. For example, when the second outer wall 2022 is a cylindrical surface, the surface of the insulation element 230 near the second outer wall 2022 is a cylindrical surface.

[0160] Specifically, the insulation component is positioned opposite the second outer wall 2022, and the insulation component can be spaced apart from the second outer wall 2022 to reduce the probability of collision between the insulation component 230 and the tip segment 2, thus preventing the generation of impurities. The surface shape of the insulation component 230 matches the shape of the second outer wall 2022 of the heat exchanger, which facilitates blocking the insulation material between the second outer wall 2022 and the outer liner 220, preventing the insulation material from falling into the molten silicon.

[0161] Optionally, the heat shield 200 also includes an inner liner 210, which is fitted outside the cylindrical section 1 of the heat exchanger, and an outer liner 220 is fitted outside the inner liner 210; an insulation element 230 is disposed between the inner liner 210 and the outer liner 220 to support the inner liner 210.

[0162] In this embodiment of the application, the heat shield 200 can be constructed from double-layer components, which facilitates the improvement of the heat insulation performance of the heat shield 200.

[0163] Specifically, as shown in Figures 10 and 11, the inner liner 210 is the inner layer component of the heat shield, and the outer liner 220 is the outer layer component of the heat shield. The inner liner is fitted over the cylindrical section 1 of the heat exchanger, and the outer liner is fitted over the inner liner; the insulation component 230 is connected between the inner liner and the outer liner to support the inner liner.

[0164] Specifically, the insulation component 230 is positioned opposite to the second outer wall 2022 of the tip section 2, so that the insulation component 230 insulates the heat exchanger. The tip section 2 is placed close to the crystallization interface, which can reduce the impact of the tip section 2 on the temperature of the solid-liquid interface outside the crystallization region and improve the temperature stability of the solid-liquid interface.

[0165] Specifically, the insulation component 230 can be a soft felt structure, working in conjunction with the support cover to provide support for the inner liner.

[0166] Specifically, the insulation component 230 can be a solid felt ring, which can provide thermal insulation and also has a certain supporting strength, so that the insulation component 230 can support the inner liner, eliminating the need for a support cover plate. Thickening the insulation component 230 can enhance its thermal insulation properties and also prevent it from crumbling and falling apart.

[0167] Optionally, the end of the tip section 2 of the heat exchanger that is away from the cylindrical section 1 can extend out or be flush with the bottom surface of the heat shield 200, so that the heat exchanger can be closer to the solid-liquid interface, further increasing the longitudinal temperature gradient of the crystal, thereby increasing the growth rate of the crystal.

[0168] Furthermore, a third absorbing coating can be applied to the end of the tip segment 2 away from the cylindrical segment 1 to reflect the distance from the solid-liquid interface to the tip segment 2 for CCD field of view capture.

[0169] Optionally, during the installation of the heat exchange device, the heat shield 200 can be installed first, and then the heat exchanger can be installed. The relative position of the tip section 2 and the heat shield 200 can be adjusted by raising and lowering. For example, the end of the tip section 2 away from the cylindrical section 1 can be flush with the bottom surface of the heat shield 200, or the end of the second end of the tip section 2 can be lower than the bottom surface of the heat shield 200, thereby further increasing the longitudinal temperature gradient of the crystal.

[0170] Specifically, the thermal field device may further include a lifting mechanism connected to the heat exchanger to adjust the height of the heat exchanger in order to control the distance between the tip segment 2 and the solid-liquid interface.

[0171] Optionally, during crystal growth, a CCD can be used to acquire image information to obtain the liquid outlet distance. When the tip segment 2 is recessed within the hot shield 200 at the end away from the cylindrical segment 1, the CCD can acquire a projection image of the bottom of the hot shield 200 in the molten silicon to obtain the liquid outlet distance from the bottom of the hot shield 200 to the solid-liquid interface.

[0172] When the tip segment 2 extends beyond the bottom surface of the heat shield 200 at the end away from the cylindrical segment 1, the CCD can acquire a projection image of the end of the tip segment 2 away from the cylindrical segment 1 in the molten silicon to obtain the liquid outlet distance from the lower end of the tip segment 2 to the solid-liquid interface.

[0173] Specifically, the CCD can acquire image information through the first heat exchange channel 1013 and the second heat exchange channel 2023. That is, the first heat exchange channel 1013 and the second heat exchange channel 2023 can be used as crystal pulling channels or as field-of-view capture windows.

[0174] Specifically, by simulating and comparing existing thermal field devices with the thermal field devices in the embodiments of this application, under the same process conditions, the thermal field device provided by this application has a larger longitudinal temperature gradient of the crystal. The specific feature comparison is shown in Figures 12A and 12B. The arrow direction represents the heat transfer direction, and the greater the arrow density, the more concentrated the heat.

[0175] Czochralski single-crystal silicon growth was performed using both existing thermal field devices and the thermal field devices in the embodiments of this application. As shown in Table 1, the experiments verified that the highest pulling speed in the existing thermal field devices was 1.8 mm / min, while the highest pulling speed in the thermal field devices provided in this application was 1.96 mm / min. Compared with the existing thermal field devices, the pulling speed in the thermal field devices provided in this application is increased by 0.16 mm / min.

[0176] Table 1:

[0177] The thermal field device described in this application embodiment can achieve the same beneficial effects as the heat exchanger described above, and will not be repeated here.

[0178] On the other hand, this application also discloses a single crystal furnace, which may specifically include the heat exchanger described above; it may also include the heat shield and the heat exchanger described above, with the heat shield 200 sleeved outside the heat exchanger.

[0179] The single crystal furnace described in this application embodiment can achieve the same beneficial effects as the heat exchanger described above, and will not be repeated here.

[0180] Although preferred embodiments of the present application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present application.

[0181] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0182] The heat exchanger, thermal field device, and single crystal furnace provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0183] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0184] Those skilled in the art will understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A heat exchanger, characterized in that, The heat exchanger includes: The annular body has a hollow portion near the inner side of the annular body that serves as a crystal channel, and at least one annular flow channel distributed along the axial direction of the annular body is provided within the annular body. The water inlet pipe and the water outlet pipe are respectively connected to at least one of the annular flow channels.

2. The heat exchanger according to claim 1, characterized in that, The height of the annular flow channel along the axial direction of the annular body is the first height, and the width of the annular flow channel along the radial direction of the annular body is the first width. The ratio of the first height to the first width is 4:3-200:

1.

3. The heat exchanger according to claim 2, characterized in that, The ratio of the first height to the first width is 2:1 to 50:

1.

4. The heat exchanger according to claim 2, characterized in that, The first width is 2 mm to 35 mm.

5. The heat exchanger according to claim 4, characterized in that, The first width is 7 mm to 20 mm.

6. The heat exchanger according to claim 2, characterized in that, The annular body has an inner wall close to the crystal channel and an outer wall away from the crystal channel, and an inner cavity for cooling medium to flow is formed between the inner wall and the outer wall of the annular body. The inner cavity is provided with multiple partitions, which are spaced apart along the axial direction of the annular body to divide the inner cavity into multiple annular flow channels; two adjacent annular flow channels are connected; along the axial direction of the annular body, the cross-sectional shape of the annular flow channel is rectangular or parallelogram.

7. The heat exchanger according to claim 6, characterized in that, The annular flow channel is also provided with a turbulence structure, which is used to increase the local flow velocity of the cooling medium on the inner sidewall.

8. The heat exchanger according to claim 7, characterized in that, The turbulence structure includes a protrusion on the outer side wall near the annular flow channel, the protrusion protruding toward the inner side wall.

9. The heat exchanger according to claim 8, characterized in that, The distance between the inner and outer walls of the annular body is the thickness of the annular flow channel; the maximum height of the protrusion is the height of the protrusion along the direction from the outer wall to the inner wall. The height of the protrusion is 30%-95% of the thickness of the annular flow channel.

10. The heat exchanger according to claim 8, characterized in that, The surface of the outer wall near the annular flow channel is the first surface, the area of ​​the first surface is the first area, the total area of ​​the protrusions on the first surface is the second area, and the ratio of the second area to the first area is greater than 1 / 3.

11. The heat exchanger according to claim 8, characterized in that, The number of protrusions is multiple, and the multiple protrusions are arranged in a row along the circumference of the outer side wall to form a protrusion group, and at least two protrusion groups are arranged along the axial direction of the annular body. In two adjacent protrusion groups, the protrusions in one protrusion group are offset from the protrusions in the other protrusion group along the axial direction of the annular body, and in two adjacent protrusion groups, the protrusions in one protrusion group are at least partially located between adjacent protrusions in the other protrusion group.

12. The heat exchanger according to claim 8, characterized in that, The surface of the protrusion facing the inner wall is spherical, and the diameter of the spherical surface is 5 mm to 70 mm.

13. The heat exchanger according to claim 8, characterized in that, The protrusion and the outer side wall are either integrally formed or separate structures; when the protrusion and the outer side wall are separate structures, the protrusion is bonded to the outer side wall, or the protrusion is welded to the outer side wall, or the protrusion is connected to the outer side wall by fasteners.

14. The heat exchanger according to claim 8, characterized in that, The annular body includes a first segment and a second segment that are connected to each other; the inner diameters of the first segment and the second segment are the same or different, and the second segment is further away from the inlet pipe or outlet pipe than the first segment; the turbulence structure is disposed on the outer wall of the second segment.

15. The heat exchanger according to any one of claims 1 to 6, characterized in that, The inner wall of the annular body is provided with a pit, and the opening of the pit faces the crystal channel.

16. The heat exchanger according to claim 2, characterized in that, The annular body has a bottom end face near the crucible, and the width of the bottom end face along the radial direction of the annular body is a second width, which is less than or equal to 30 mm.

17. The heat exchanger according to claim 1, characterized in that, The heat exchanger further includes a tip section, and the annular body includes a cylindrical section; the cylindrical section and the tip section are arranged along a first direction, and the cylindrical section and the tip section are fixedly connected; the first direction is the axial direction of the heat exchanger. The cylindrical section includes a first inner wall and a first outer wall; a first heat exchange cavity is formed between the first inner wall and the first outer wall; Along the first direction, the orthographic projection of the outer peripheral surface of the tip segment is located inside the orthographic projection of the first outer wall; The distance between the first inner wall and the first outer wall is d1, and the distance between the outer peripheral surface and the inner peripheral surface of the tip segment is d2, where d1 ≥ 1.2d2.

18. The heat exchanger according to claim 17, characterized in that, d1 is 30-45mm, d2 is 4-25mm.

19. The heat exchanger according to claim 17 or 18, characterized in that, Along the first direction, the length L of the tip segment is 7-40 mm.

20. The heat exchanger according to claim 17 or 18, characterized in that, The tip section includes a second inner wall and a second outer wall; a second heat exchange cavity is formed between the second inner wall and the second outer wall; the second inner wall is fixedly connected to the first inner wall, and the second outer wall is fixedly connected to the first outer wall.

21. The heat exchanger according to claim 20, characterized in that, The distance between the second inner wall and the second outer wall is 3-15mm.

22. The heat exchanger according to claim 20, characterized in that, The inner circumferential surface of the second inner wall is coplanar with the inner circumferential surface of the first inner wall.

23. The heat exchanger according to claim 20, characterized in that, The second outer wall includes a vertical wall; the end of the vertical wall is fixedly connected to the first outer wall; Alternatively, the second outer wall includes a vertical wall and a second conical wall; one end of the vertical wall is fixedly connected to the first outer wall, and the other end is fixedly connected to the second conical wall.

24. The heat exchanger according to claim 23, characterized in that, The heat exchanger includes a transition section; the cylindrical section is fixedly connected to the tip section via the transition section. The orthographic projection of the outer wall of the transition section is located inside the orthographic projection of the first outer wall, and the orthographic projection of the second outer wall is located inside the orthographic projection of the outer wall of the transition section.

25. The heat exchanger according to claim 24, characterized in that, The outer wall of the transition section is a cone.

26. The heat exchanger according to claim 20, characterized in that, The flow channel of the second heat exchange chamber is not connected to the flow channel of the first heat exchange chamber; or, the flow channel of the second heat exchange chamber is connected to the flow channel of the first heat exchange chamber.

27. The heat exchanger according to claim 20, characterized in that, The inner surface of the first inner wall is provided with a first absorbent coating; the inner surface of the second inner wall is provided with a second absorbent coating.

28. The heat exchanger according to claim 17, characterized in that, Along the first direction, a third absorption coating is provided at the end of the tip segment away from the cylindrical segment, and the emissivity of the third absorption coating is greater than 0.

2.

29. A single crystal furnace, characterized in that, include: The heat exchanger according to any one of claims 1 to 28.

30. A thermal field device, characterized in that, Includes a heat shield and a heat exchanger as described in any one of claims 17-28; The heat shield is fitted over the heat exchanger.

31. The thermal field device according to claim 30, characterized in that, The heat shield includes an insulation component and an outer liner; the outer liner is fitted over the heat exchanger.

32. The thermal field device according to claim 31, characterized in that, Along the first direction, the insulation element is disposed between the cylindrical section and the outer liner; the insulation element is disposed opposite to the second outer wall of the tip section, and the surface shape of the insulation element matches the outer surface shape of the second outer wall; Alternatively, the heat shield may further include an inner liner, which is fitted over the cylindrical section, and an outer liner is fitted over the inner liner; the insulation element is disposed between the inner liner and the outer liner; and the inner liner is supported on the insulation element.

Images